CN101393951B - Optoelectronic element and manufacturing method therefor - Google Patents
Optoelectronic element and manufacturing method therefor Download PDFInfo
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- CN101393951B CN101393951B CN200710154615XA CN200710154615A CN101393951B CN 101393951 B CN101393951 B CN 101393951B CN 200710154615X A CN200710154615X A CN 200710154615XA CN 200710154615 A CN200710154615 A CN 200710154615A CN 101393951 B CN101393951 B CN 101393951B
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- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 230000005693 optoelectronics Effects 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 140
- 239000000758 substrate Substances 0.000 claims description 72
- 238000000576 coating method Methods 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- -1 nitrogen-containing compound Chemical class 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 239000004575 stone Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 238000000889 atomisation Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- HPXKRIGAFYUDQH-UHFFFAOYSA-N chromium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[Cr+3] HPXKRIGAFYUDQH-UHFFFAOYSA-N 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention discloses a photoelectric semiconductor structure which includes a base provided with a first surface and a second surface, and an atomizing layer is arranged between the first surface and the second surface; a multilayer semiconductor structure is arranged on the base and at least includes a first semiconductor structure layer formed on the base, a second semiconductor structure layer, and an active layer arranged between the first semiconductor structure layer and the second semiconductor structure layer.
Description
Technical field
The present invention discloses a kind of photoelectric cell, more particularly provides the substrate with atomizing layer, with lattice structure that changes substrate and the photoelectric efficiency that can increase the overall optical electric device.
Background technology
In order to improve the crystalline quality of gallium nitride compound layer, the essential solution at sapphire (sapphire) and as the problem of the lattice match between the gallium nitride compound layer of luminescent layer.Therefore, in known technology, for example the United States Patent (USP) notification number 5,122,845 (as shown in Figure 1) were the resilient coatings (buffer layer) 101 that forms between substrate 100 and gallium nitride layer 102 based on aluminium nitride (AlN), and the crystalline texture of this resilient coating 101 is with micro-crystallization (microcrystal) or many crystallizations (polycrystal) and mixes under the state of amorphous silicon, thereby the crystalline texture of resilient coating 101 can be improved the do not match problem of (crystal mismatching) of lattice between gallium nitride compound layer 103.And for example the United States Patent (USP) notification number 5,290, and shown in 393 (as shown in Figure 2), its photoelectric cell is the compound semiconductor layer 202 based on gallium nitride, for example Ga
xAl
1-xN (0＜x≤1).Yet when forming compound semiconductor layer 202 in mode of heap of stone brilliant in substrate 200, the lattice picture on surface in substrate 200 is not good and can have influence on the quality of follow-up manufacturing blue light photoelectric cell, therefore by resilient coating 201 Ga for example
xAl
X-1N improves the lattice match problem between substrate 200 and the compound semiconductor 202.In addition, please refer to United States Patent (USP) notification number 5,929,466 or United States Patent (USP) notification number 5,909,040 (as shown in Figure 3) disclosed, for reduce the unmatched problem of lattice be with aluminium nitride 301 as first resilient coating be formed in the substrate 300, indium nitride (InN) layer 302 is formed on first resilient coating 301 as second resilient coating, with improve and substrate 300 between the unmatched problem of lattice.
Summary of the invention
In view of above problem, main purpose of the present invention be to utilize laser can focused energy at the certain depth of substrate, utilize high-energy to make the material production of substrate in the lattice arrangement mode of polysilicon or amorphous silicon and in substrate, become atomizing layer (atomization layer), thereby, the light scattering that substrate upper strata photoelectric cell can be sent goes out the photoelectric cell outside, to reduce total reflection effect and to reach the increase photoelectric efficiency.
Another object of the present invention provides the photoelectric cell with multilayer semiconductor structure, thereby multilayer semiconductor structure can reduce the unmatched problem of lattice of the luminescent layer and first semiconductor structure layer.
According to above-mentioned purpose, the present invention discloses a kind of optoelectronic semiconductor structure, comprises: substrate has first surface and second surface, and have atomizing layer (atomization layer) between first surface and second surface; Multilayer semiconductor structure is on the first surface of substrate, and it comprises at least: first semiconductor structure layer is formed in the substrate, second semiconductor structure layer, and active layers between first semiconductor structure layer and second semiconductor structure layer.
The present invention also discloses a kind of photoelectric cell, comprises: first electrode; Substrate is formed on first electrode and has first surface and second surface, has atomizing layer between first surface and second surface; The multilayer semiconductor structure layer is formed on the first surface of substrate, and the multilayer semiconductor structure layer comprises at least: first semiconductor structure layer, second semiconductor structure layer and active layers are formed between first semiconductor structure layer and second semiconductor structure layer; Transparency conducting layer is formed on second semiconductor structure layer and second electrode is formed on the transparency conducting layer.
About feature of the present invention and embodiment, conjunction with figs. is described in detail as follows as most preferred embodiment now.(for making purpose of the present invention, structure, feature and function thereof there are further understanding, cooperate embodiment to be described in detail as follows now.)
Description of drawings
Fig. 1 is according to the technology disclosed in the known technology, the generalized section of expression photoelectric cell;
Fig. 2 is according to the technology disclosed in the known technology, and expression is with the generalized section of the Jingjing sheet of heap of stone of building crystal to grow;
Fig. 3 is according to the technology disclosed in the known technology, the generalized section of expression photoelectric cell;
Fig. 4 A and Fig. 4 B are the technology disclosed according to the present invention, two generalized sections of two specific embodiments of expression optoelectronic semiconductor structure;
Fig. 5 A and Fig. 5 B are the technology disclosed according to the present invention, two generalized sections of two other specific embodiment of expression optoelectronic semiconductor structure;
Fig. 6 A and Fig. 6 B are the technology disclosed according to the present invention, two generalized sections of two specific embodiments of expression photoelectric cell; And
Fig. 7 A and Fig. 7 B are the technology disclosed according to the present invention, two generalized sections of two other specific embodiment of expression photoelectric cell.
The main element description of symbols
10 substrate 10A first surfaces
10B second surface 12 atomizing layers
20 resilient coatings, 22 first nitrogen-containing compound layers
24 5 families/two compounds of group layers, 26 second nitrogen-containing compound layer
30 multilayer semiconductor structure layers, 32 first semiconductor structure layer
34 active layers, 36 second semiconductor structure layer
40 transparency conducting layers, 50 first electrodes
60 second electrodes
100 substrates, 101 resilient coatings
102 gallium nitride layers, 103 gallium nitride compound layers
200 substrates, 201 resilient coatings
300 substrates of 202 compound semiconductor layers
301 first resilient coatings, 302 second resilient coatings
Embodiment
At first please refer to Fig. 4 A, is the cutaway view of expression disclosed optoelectronic semiconductor structure according to the present invention.The optoelectronic semiconductor structure comprises: substrate 10, have first surface 10A and second surface 10B and have atomizing layer 12 between first surface 10A and second surface 10B, and multilayer semiconductor structure layer 30, wherein multilayer semiconductor structure layer 30 comprises at least: first semiconductor structure layer 32, second semiconductor structure layer 36 and active layers 34 are between first semiconductor structure layer 32 and second semiconductor structure layer 36.At this, first semiconductor structure layer 32 can be the semiconductor layer of n-type, and second semiconductor structure layer 36 can be the semiconductor layer of P-type.Active layers 34 can be multi layer quantum well (MQW; Multiple Quantum Well) or quantum well (QW; Quantum Well).
In the present embodiment, be to utilize the interior technology for fast carving on of laser (laser), utilize laser can focused energy at the certain depth of substrate 10, make and form atomizing layer (atomization layer) 12 in the inside of substrate 10, at this, atomizing layer 12 in the substrate 10 can go out the photoelectric cell outside with the light scattering that light-emitting component sent in the substrate 10 as light scattering layer, takes out effect thereby can reduce total reflection effect and increase light.
In addition, in the process of carrying out body laser inner carving, can not destroy the surface of substrate 10, can not influence the of heap of stone brilliant quality of follow-up building crystal to grow yet.Moreover, by the energy that laser produced, impel the lattice structure of in substrate 10 inside (being between first surface 10A and the second surface 10B) to rearrange, the mode of its lattice arrangement can crystal silicon (polycrystal) or non-polysilicon (amorphous) structure forms and resets, and can increase the luminous efficiency of photoelectric cell.At this, the degree of depth of atomizing layer 12 can be controlled by laser focal, can cooperate emission wavelength to come the designing optimal degree of depth.For example, with wavelength 355nm LASER Light Source, frequency is adjusted suitable optical focus module LASER Light Source is focused on the processing of the about 3um thickness of the degree of depth atomizing layer between about 10um to 30um down of sapphire substrates 10 surfaces between 70kHz to 250kHz.Form the optoelectronic semiconductor structure 30 of first semiconductor structure layer (n type gallium nitride semiconductor layers) 32, active layers 34 and second semiconductor structure layer (p type gallium nitride semiconductor layers) 36 in this substrate 10 successively with crystal type of heap of stone, this optoelectronic semiconductor structure 30 is in the luminous efficiency of the substrate 10 with atomizing layer 12 luminous efficiency high about 15% than general substrate.
In addition, in the disclosed optoelectronic semiconductor structure of present embodiment, can also comprise resilient coating 20 and be formed between substrate 10 and the multilayer semiconductor structure layer 30, shown in Fig. 4 B.This resilient coating 20 can be the compound layer of nitrogen gallium (GaN), or with the first nitrogen-containing compound layer, 22/ 5 family/two compounds of group layers, 24/ second nitrogen-containing compound layer 26 constituted compound layer as resilient coating 20, wherein the first nitrogen-containing compound layer 22 can be Im-Ga-Al nitride (AlInGaN) layer, InGaN (InGaN) layer, aluminium gallium nitride alloy (AlGaN) layer and aluminum indium nitride (AlInN) layer.The material of the second nitrogen-containing compound layer 26 is selected from following group: aluminium gallium nitride alloy (AlGaN) and gallium nitride (GaN).The material of two families in five families/two compounds of group layers 24 is to be selected from following group: beryllium (Be), magnesium (Mg), calcium (Ca), strontium (Sr), barium (Ba), radium (Ra), zinc (Zn), cadmium (Cd) and mercury (Hg); And the material of five families is to be selected from following group: nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) and bismuth (Bi).
Therefore, the resilient coating 20 that is constituted by the first nitrogen-containing compound layer 22, five families/two compounds of group layers 24 and the second nitrogen-containing compound layer 26 is multilayer stress-buffer layer structure (multi-strainreleasing layer structure), can be as the initial layers of the brilliant stacked structure of heap of stone of later use building crystal to grow by this multilayer stress-buffer layer structure.In addition, between first semiconductor structure layer 32 in this multilayer stress-buffer layer structure (being resilient coating) 20 and the multilayer semiconductor structure layer 30 excellent lattice matching is arranged, and obtain the semiconductor layer of the good nitrogen gallium of quality.
Then, please refer to Fig. 5 A and Fig. 5 B, is the cutaway view of another specific embodiment of the disclosed optoelectronic semiconductor structure of expression the present invention.In Fig. 5 A and Fig. 5 B, formation method, structure and the characteristic of substrate 10 and multilayer semiconductor structure layer 30 is all identical with Fig. 4 A and Fig. 4 B, therefore no longer repeats statement.The otherness of Fig. 5 A and Fig. 5 B and Fig. 4 A and Fig. 4 B is, above substrate 10 with atomizing layer 12, form after first semiconductor structure layer 32, active layers 34 and second semiconductor structure layer 36 with crystal type of heap of stone successively, use the etching manufacturing process to remove second semiconductor structure layer 36, active layers 34 and first semiconductor structure layer 32 partly to expose first semiconductor structure layer 32 partly to finish the structure of photoelectric cell.
Please continue the A with reference to Fig. 6, be the cutaway view of expression disclosed photoelectric cell according to the present invention.Therefore similarly, the structure of the element that is disclosed among Fig. 6 A, formation method and characteristic are all identical with Fig. 4 A, repeated description no longer.As described in Fig. 6 A, photoelectric cell comprises: first electrode 50; Substrate 10 with atomizing layer 12 is formed on first electrode, 50 tops; Multilayer semiconductor structure layer 30 is above substrate 10, wherein, multilayer semiconductor structure layer 30 comprises at least: first semiconductor structure layer 32, second semiconductor structure layer 36 and active layers 34 are between first semiconductor structure layer 32 and second semiconductor structure layer 36; Then, transparency conducting layer 40 is formed on the multilayer semiconductor structure layer 30; At last, second electrode 60 is formed on the transparency conducting layer 40.In this embodiment, the mode that forms transparency conducting layer 50 be above multilayer semiconductor structure layer 30 is formed on substrate 10 after, the reaction vessel temperature is reduced to room temperature, then by taking out brilliant chip of heap of stone in the reaction vessel, and on the surface of second semiconductor structure layer 36 of multilayer semiconductor structure layer 30, form the light shield pattern of a certain given shape, and then in reactive ion etching (RIE) device, carry out etching.After etching, on whole second semiconductor structure layer 36, form transparency conducting layer 50 again, its thickness is about 2500 dusts, and material can be selected from following group: Ni/Au, NiO/Au, Ta/Au, TiWN, TiN, tin indium oxide, chromium oxide tin, antimony tin, zinc oxide aluminum and zinc-tin oxide.
Then, on transparency conducting layer 40, form second electrode 60 that a layer thickness is about 2000um.In the present embodiment, second semiconductor structure layer 36 is a p type nitride semiconductor layer, and therefore the material of second electrode 60 can be made of Au/Ge/Ni, Ti/Al, Tl/Al/Ti/Au or Cr/Au alloy.Form first electrode 50 at last in substrate 10, the material of this first electrode 50 can be Au/Ge/Ni, Ti/Al, Tl/Al/Ti/Au or Cr/Au alloy or W/Al alloy.Therefore,, promptly can obtain a concrete photoelectric cell, be noted that at this owing to be known technology in first electrode 50 and the manufacturing process of second electrode 60, therefore no longer further narration in the present invention at photoelectric cell according to the above.
Be noted that at this, in the represented photoelectric cell of Fig. 6 A, can also comprise the top that resilient coating 20 is formed on the substrate 10 with atomizing layer 12, shown in Fig. 6 B, its resilient coating 20 can be a nitrogen gallium layer or by the multilayer stress-buffer layer structure 20 that the first nitrogen-containing compound layer, 22/ 5 family/two compounds of group layers, 24/ second nitrogen-containing compound layer 26 constituted, can be as the initial layers of the brilliant stacked structure of heap of stone of later use building crystal to grow by this resilient coating 20.In addition, between first semiconductor structure layer 32 of this multilayer stress-buffer layer structure (being resilient coating) 20 and multilayer semiconductor structure layer 30 excellent lattice matching is arranged, and obtain the semiconductor layer of the good nitrogen gallium of quality.
Please refer to Fig. 7 A, is the cutaway view of expression another specific embodiment of disclosed photoelectric cell according to the present invention.Therefore at this, the structure of the portion of element that is disclosed among Fig. 7 A, formation method and characteristic are all identical with Fig. 6 A, repeated description no longer.Shown in Fig. 7 A, photoelectric cell comprises: the substrate 10 with atomizing layer 12; Multilayer semiconductor structure layer 30 is above substrate 10, and wherein, multilayer semiconductor structure layer 30 comprises at least: first semiconductor structure layer 32, active layers 34 are formed on first semiconductor structure layer 32, second semiconductor structure layer 36 is formed on the active layers 34; Next, use the etching manufacturing process to remove partly second semiconductor structure layer 36, part active layers 34 and part first semiconductor structure layer 32, to expose partly first semiconductor structure layer 32, the part that is exposed in this first semiconductor structure layer 32 is second part, and the part that is covered by the active layers 34 and second semiconductor structure layer 36 is first part, and first part away from second partly; Then, transparency conducting layer 40 is formed on the multilayer semiconductor structure layer 30; Then, first electrode 50 is formed on second part of first semiconductor structure layer 32, and second electrode 60 is formed on the transparency conducting layer 40.
Similarly, in the represented photoelectric cell of Fig. 7 A, can also comprise the top that resilient coating 20 is formed on the substrate 10 with atomizing layer 12, shown in Fig. 7 B, its resilient coating 20 can be a nitrogen gallium layer or by the multilayer stress-buffer layer structure 20 that the first nitrogen-containing compound layer, 22/ 5 family/two compounds of group layers, 24/ second nitrogen-containing compound layer 26 constituted, can be as the initial layers of the brilliant stacked structure of heap of stone of later use building crystal to grow by this resilient coating 20.In addition, between first semiconductor structure layer 32 of this multilayer stress-buffer layer structure (being resilient coating) 20 and multilayer semiconductor structure layer 30 excellent lattice matching is arranged, and obtain the semiconductor layer of the good nitrogen gallium of quality.
Though the present invention discloses as above with aforesaid preferred embodiment; right its is not in order to limit the present invention; the person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, therefore scope of patent protection of the present invention must be looked this specification claims and is as the criterion.
Claims (10)
1. optoelectronic semiconductor epitaxial structure comprises:
Substrate, have first surface and second surface, have atomizing layer between this first surface and this second surface, wherein this atomizing layer is to form the lattice structure that makes in base material by laser to rearrange, and the material of this atomizing layer is identical with this base material;
Resilient coating comprises the first nitrogen-containing compound layer/five families/two compounds of group layers/second nitrogen-containing compound layer at least, is formed on this substrate; And
The multilayer semiconductor structure layer is formed on this first surface of this substrate, and wherein this multilayer semiconductor structure layer comprises at least:
First semiconductor structure layer is formed in this substrate, and this first semiconductor structure layer has first part and the second exposed part at least, and this first part is away from this second part;
Second semiconductor structure layer; And
Multi layer quantum well is formed between this first semiconductor structure layer and this second semiconductor structure layer, and this multi layer quantum well has a plurality of irregular and surfaces that just rise and fall.
2. optoelectronic semiconductor epitaxial structure according to claim 1 is characterized in that the thickness of this atomizing layer is not less than 10 dusts.
3. photoelectric cell comprises:
First electrode is provided;
Substrate, be formed on this first electrode and have first surface and second surface, between this first surface and this second surface, has atomizing layer, wherein this atomizing layer is to form the lattice structure that makes in base material by laser to rearrange, and the material of this atomizing layer is identical with this base material;
The multilayer semiconductor structure layer is formed on this first surface of this substrate, and wherein this multilayer semiconductor structure layer comprises at least:
First semiconductor structure layer is formed in this substrate;
Second semiconductor structure layer; And
Multi layer quantum well is formed between this first semiconductor structure layer and this second semiconductor structure layer, and this multi layer quantum well has a plurality of irregular and surfaces that just rise and fall;
Resilient coating is formed between this substrate and this multilayer semiconductor structure;
Transparency conducting layer is formed on this second semiconductor structure layer; And
Second electrode is formed on this transparency conducting layer.
4. photoelectric cell comprises:
Substrate is provided, have first surface and second surface, have atomizing layer between this first surface and this second surface, wherein this atomizing layer is to form the lattice structure that makes in base material by laser to rearrange, and the material of this atomizing layer is identical with this base material;
Resilient coating is formed on this substrate;
First semiconductor structure layer is formed in this substrate, and has first part and the second exposed part;
Active layers is formed on this first part of this first semiconductor structure layer, and has a plurality of irregular and surfaces that just rise and fall;
Second semiconductor structure layer is formed on this active layers;
Transparency conducting layer is formed on this second semiconductor structure layer;
First electrode is formed on this exposed second part of this first semiconductor structure layer; And
Second electrode is formed on this transparency conducting layer.
5. the manufacture method of an optoelectronic semiconductor structure comprises:
Substrate is provided, has first surface and second surface;
Carry out the body laser inner carving step, make the lattice structure of this substrate rearrange, and between this first surface and this second surface, form atomizing layer, and the material of this atomizing layer is identical with this base material in this substrate inside;
Form the multilayer semiconductor structure layer on this first surface of this substrate, also comprise:
Form first semiconductor structure layer on this first surface of this substrate;
Form second semiconductor structure layer; And
Form active layers between this first semiconductor structure layer and this second semiconductor structure layer, this active layers has a plurality of irregular and surfaces that just rise and fall; And
Form and have the resilient coating of five families/two family's compounds of group at least between this substrate and this multilayer semiconductor structure layer.
6. manufacture method according to claim 5, it is to arrange with polysilicon structure that the lattice structure that it is characterized in that this substrate rearranges.
7. manufacture method according to claim 5, it is with the amorphism structural arrangement that the lattice structure that it is characterized in that this substrate rearranges.
8. manufacture method according to claim 5, it is characterized in that after forming this second semiconductor structure layer, carry out etching step to remove this second semiconductor structure layer of part, this active layers and this first semiconductor structure layer with exposed partly this first semiconductor structure layer.
9. the manufacture method of a photoelectric cell comprises:
First electrode is provided;
Form substrate on this first electrode, wherein this substrate has first surface and second surface;
Carry out the body laser inner carving step, make the lattice structure of this substrate rearrange, and between this first surface and this second surface, form atomizing layer, and the material of this atomizing layer is identical with this base material in this substrate inside;
Form the multilayer semiconductor structure layer on this first surface of this substrate, also comprise:
Form first semiconductor structure layer on this first surface of this substrate;
Form second semiconductor structure layer; And
Form active layers between this first semiconductor structure layer and this second semiconductor structure layer, this active layers has a plurality of irregular and surfaces that just rise and fall;
Form transparency conducting layer on this second semiconductor structure layer; And
Form second electrode on this transparency conducting layer.
10. the manufacture method of a photoelectric cell comprises:
Substrate is provided, has first surface and second surface;
Carry out the body laser inner carving step, make the lattice structure of this substrate rearrange, and between this first surface and this second surface, form atomizing layer, and the material of this atomizing layer is identical with this base material in this substrate inside;
Form first semiconductor structure layer on this first surface of this substrate;
Form second semiconductor structure layer;
Form active layers between this first semiconductor structure layer and this second semiconductor structure layer, wherein this active layers has a plurality of irregular and surfaces that just rise and fall;
This second semiconductor structure layer of etching part, this active layers of part and this first semiconductor structure layer of part are to expose partly this first semiconductor structure layer;
Form transparency conducting layer on this second semiconductor structure layer;
Form first electrode on this first semiconductor structure layer of the part that exposes; And
Form second electrode on this transparency conducting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710154615XA CN101393951B (en) | 2007-09-17 | 2007-09-17 | Optoelectronic element and manufacturing method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710154615XA CN101393951B (en) | 2007-09-17 | 2007-09-17 | Optoelectronic element and manufacturing method therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101393951A CN101393951A (en) | 2009-03-25 |
| CN101393951B true CN101393951B (en) | 2010-06-02 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6078064A (en) * | 1998-05-04 | 2000-06-20 | Epistar Co. | Indium gallium nitride light emitting diode |
| US6211095B1 (en) * | 1998-12-23 | 2001-04-03 | Agilent Technologies, Inc. | Method for relieving lattice mismatch stress in semiconductor devices |
| CN1588659A (en) * | 2004-07-16 | 2005-03-02 | 北京工业大学 | N-pin structure semiconductor luminous diode |
| US6984840B2 (en) * | 1998-05-18 | 2006-01-10 | Fujitsu Limited | Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6078064A (en) * | 1998-05-04 | 2000-06-20 | Epistar Co. | Indium gallium nitride light emitting diode |
| US6984840B2 (en) * | 1998-05-18 | 2006-01-10 | Fujitsu Limited | Optical semiconductor device having an epitaxial layer of III-V compound semiconductor material containing N as a group V element |
| US6211095B1 (en) * | 1998-12-23 | 2001-04-03 | Agilent Technologies, Inc. | Method for relieving lattice mismatch stress in semiconductor devices |
| CN1588659A (en) * | 2004-07-16 | 2005-03-02 | 北京工业大学 | N-pin structure semiconductor luminous diode |
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Effective date of registration: 20161028 Address after: Hsinchu City, Taiwan, China Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: Taichung City, Taiwan, China Industrial Zone No. 34 Road, No. 40 Patentee before: Guangjia Photoelectric Co., Ltd. |