CN101388480A - Microwave filter network film phase shifter and preparation method thereof - Google Patents
Microwave filter network film phase shifter and preparation method thereof Download PDFInfo
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- Waveguide Switches, Polarizers, And Phase Shifters (AREA)
Abstract
The invention discloses a film phase shifter of a microwave filter network and a preparation method thereof. The phase shifter is composed of a substrate, a ferroelectric film, a surface electrode and a bottom electrode and has a multilayer structure of a microwave filter network; the microwave filter network consists of a variable distribution parameter part and an invariable distribution parameter part; the variable distribution parameter part of the microwave filter network is constructed on the ferroelectric film, and the non-variable distribution parameter part of the microwave filter network is constructed on the substrate. The invention realizes microwave phase shift by changing the distributed capacitance parameter value in the network. In addition, the ferroelectric film selected by the invention is a barium zirconate titanate film. Therefore, the phase shifter has the following advantages: the circuit has the advantages of stable performance, good impedance matching, low loss, simple circuit topological structure, easy realization of process, small size and light weight.
Description
Technical field
The present invention relates to a kind of film phase shifter, particularly a kind of microwave low-pass filter network ferroelectric thin-membrane phase shifter that is used for wireless communication field and preparation method thereof.
Background technology
Phased array antenna is the main flow of modern radar and wireless communication field development.No matter be the advantage that has all fully showed it at military aspect or in commercial signal communication system, now become the emphasis that various countries are competitively studied.And automatically controlled digital phase shifter is the core component of phased array radar, satellite communication, moving communicating field phased array antenna.Automatically controlled digital phase shifter is the core component of phased array radar, satellite communication, moving communicating field phased array antenna, no matter be the advantage that has all fully showed it at military aspect or in commercial signal communication system.For example, in the middle of Wi-Fi, 3G and Wimax, all adopted the phase modulation method of baseband signal; Fire control phased array radar on the F-22 opportunity of combat has 1980 phase components on every; American National missile defense systems ground radar has used 81000 phase components.
The performance of phase shifter not only depends on selected material, and structural design is also very important.Therefore, develop in light weight, volume is little and the automatically controlled digital phase shifter of high performance-price ratio becomes the key of technical development now.
Current, phase shifter commonly used has PIN diode digital phase shifter, ferrite digital phase shifter and monolithic integrated microwave circuit (MMIC) digital phase shifter.Though can both realize the function of phase shift, they have intrinsic separately weakness: the required Control current dc power of (1) PIN diode phase shifter is big, the insertion loss is big, the space of a whole page size of structure is big, power handling capability is limited, X-band four bit phase shifter are inserted loss and are reached 8dB, and phase shift of every increase, and inserting loss will increase 2dB.(2) the reset/set temporary impact electric current of ferrite phase shifter can reach tens amperes.Phase shift is slow change-over time, even can reach a millisecond magnitude, has a strong impact on the modulating speed of signal and the electricity of radar beam is swept speed in the middle of using, and can only make in the middle of waveguide, can not be used for planar circuit.(3) there is the excessive inherent shortcoming of insertion loss equally in the digital phase shifter of arsenic potassium monolithic integrated microwave circuit (MMIC), and can only make on arsenic potassium production line, and cost is higher.
In recent years, people utilized the ferroelectric material dielectric property with the characteristics that voltage changes, and had developed the novel phase shifter of a class, i.e. ferroelectric thin-membrane phase shifter.Comparatively speaking, ferroelectric thin-membrane phase shifter has the power consumptive province, inserts advantages such as loss is little, easy to control, size is little, will become the main flow form of following phase shifting device.
Labyrinth and operation principle based on ferroelectric phase shifter, the performance of the microwave phase shifter spare of ferroelectric thin film base is subjected to many-sided condition effect, studies show that, microwave phase shifter for the ferroelectric thin film base, the performance of the microwave phase shifter spare of ferroelectric thin film base is subjected to many-sided condition effect, and its performance depends on many-sided factor:
(1) electric conductivity of electrode and the electrode shape in circuit.General electrode material comprises gold and high temperature superconducting oxide, and wherein, gold electrode is comparatively commonly used; Say that from material gold is a good conductor, if but there are not good tack and enough thickness, gold electrode itself can bring big loss to device, and the problem that exists is usually: the gold electrode thickness low LCL, electrode design is unreasonable to be caused and the circuit impedance mismatch.In addition, the shape of electrode directly has influence on the AC impedance and the tunable performance of entire device.Therefore, by the electric conductivity and the shape of appropriate design electrode, could make device and external circuit form good coupling is an important consideration.
(2) structure of ferroelectric thin film and dielectric property.More common ferroelectric thin film is when satisfying adjustable preferably dielectric property, often because of the extrinsic factor of material intrinsic-OR (substrate improperly causes that interface performance is bad, thin film composition control is improper such as selecting, crystal grain excessive or the like), cause the relatively large deficiency of dielectric loss, and this deficiency will cause the increase of device loss.
(3) structure matching of substrate and ferroelectric thin film, insulation property and dielectric constant.The structure of substrate and configuration of surface have a direct impact the growth quality of ferroelectric thin film, and simultaneously, the microwave dielectric property of substrate also is directly connected to the performance of device.Single crystalline substrate commonly used comprises that (chemical formula is LaAlO to lanthanum aluminate
3), magnesium oxide (chemical formula is MgO) etc.But the surface smoothness of lanthanum aluminate is not very desirable, influences the quality and the microwave property of ferroelectric thin film.And the easy deliquescence of magnesium oxide, chemical stability is bad, and the performance of ferroelectric thin film is also had negative effect.
Therefore, from the factor of above-mentioned three aspects as can be seen, how on the design of taking all factors into consideration and optimizing to various factors, promote the integrated level of ferroelectric phase shifter, make device size structurally require miniaturization more, complanation and filming, require little insertion loss on the performance, have the certain power capacity, and problem such as cost is low, be present industry urgent problem.
Chinese patent application is used barium strontium titanate (Ba number for 200510102551.x discloses a kind of ferroelectric thin-membrane phase shifter
1-xSr
xTiO
3Be called for short BST) ferroelectric thin film, the whole coplane catoptric arrangement that adopts mainly is made of two parts: one is variable interdigital capacitor, and another part is an impedance matching circuit; Wherein variable interdigital capacitor utilizes ferroelectric material to realize that its capacitance is adjustable continuously with applied voltage, and the concrete structure size can be adjusted according to different designing requirements; Impedance matching circuit is to utilize the quadravalence quatrter-wavelength line to realize; Compared with similar products, this invention part has satisfied the requirement that phase shifter need have miniaturization, complanation, filming and less insertion loss.
Yet, because there is following deficiency in above-mentioned ferroelectric thin-membrane phase shifter:
(1) imput output circuit is not placed in the microwave circuit topological model simulation optimization together, above-mentioned ferroelectric thin-membrane phase shifter also needs to consider in addition the matching problem of input and output microwave circuit, like this, is more difficult to get best impedance matching, circuit topological structure is complicated, and technology is difficult to realize.
(2) constant part of microwave low-pass filter network and variable part are all constructed and are being constituted barium strontium titanate (Ba
1-xSr
xTiO
3Be called for short BST) ferroelectric thin film, can't reduce the mismatch in the microwave low-pass filter network system and the requirement of less insertion loss.
(3) though barium strontium titanate has adjustable preferably dielectric property; Its shortcoming is that dielectric loss is relatively large, and this loss is to derive from two aspects: on the one hand, be the reason of intrinsic, promptly titanium itself have+3 and+4 two kinds of valence states, the ion that is difficult to guarantee all titaniums in film all is to be in+4 valence state; And the variation between these two kinds of valence states causes the increase of spillage of material, and on the other hand, the film preparation process also may cause loss to increase.
Summary of the invention
Deficiency in view of technique scheme the objective of the invention is to, and a kind of microwave low-pass filter network ferroelectric thin-membrane phase shifter is provided, this ferroelectric thin-membrane phase shifter stable performance, impedance matching is good, and loss is little, circuit topological structure is simple, and technology is easy to realize that size is little and in light weight.The present invention realizes the microwave phase shift by the microwave low-pass filter network, promptly replaces lumped parameter (LC) with distributed constant, realizes the microwave phase shift by the distributed capacitance parameter value (utilizing the adjustable character of voltage of ferroelectric thin film) that changes in the network.
For achieving the above object, the invention provides a kind of film phase shifter of microwave filtering network, it is formed and is had the sandwich construction of microwave filtering network by substrate, ferroelectric thin film, surface electrode and hearth electrode; Described microwave filtering network partly is made up of variable distribution argument section and immutable distributed constant; The variable distribution argument section of described microwave filtering network is constructed on ferroelectric thin film, and the immutable distributed constant of described microwave filtering network is partly constructed on substrate.
Described microwave filtering network is the microwave low-pass filter network of a joint or more piece cascade; Wherein, described immutable distributed constant partly is 50 Ω transmission lines, impedance matching circuit, surface electrode and hearth electrode and distributed constant inductance, and described variable distribution argument section is a distributed constant electric capacity.
Described cascade number is a two-stage, described distributed constant electric capacity is made up of four interdigital electric capacity that connect between 50 Ω transmission lines and distributed constant inductance, by interdigital capacitances to supply power is changed its capacitance,, low-pass filter network forms phase shift so that producing group delay.
Described impedance matching circuit is the quarter-wave impedance conversion line at least two rank.
Described ferroelectric thin film is the barium zirconium phthalate film.
Described backing material is an aluminium tantalum strontium langasite single crystal material.
The material of described 50 Ω transmission lines, distributed constant inductance, surface electrode and hearth electrode is a gold thin film, and thickness is more than or equal to 500 nanometers.
Be shaped on the thin nickel film of one deck between described gold thin film and the described substrate in advance.
The present invention also provides a kind of preparation method of thin-film phase shifter for micro-wave filter network, and it comprises the steps:
Step S1: on substrate surface, cover the mask plate of a given shape, to block substrate surface do not need the to grow part of ferroelectric thin film, wherein, described given shape be used to the to grow variable distribution parametric circuit of described microwave filtering network;
Step S2: adopt the growing method of pulsed laser deposition or magnetron sputtering, growth one deck ferroelectric thin film on substrate, and the partial pressure of oxygen in carrying out pulsed laser deposition process is controlled in the scope that is lower than 5Pa;
Step S3: the heat treatment that the film that makes is improved film quality together with substrate under higher temperature;
Step S4: adopt photoetching process on substrate, to make the immutable distributed constant part of surface electrode, hearth electrode and microwave filtering network; Wherein, described immutable distributed constant partly is 50 Ω transmission lines, impedance matching circuit and distributed constant inductance.
As shown from the above technical solution, compare with the phase shifter in the background technology, the present invention proposes this phase shifter and has the following advantages:
1) the present invention just considers the matching problem with system when analog simulation, and imput output circuit is placed in the microwave circuit topological model simulation optimization together.Therefore, do not need to consider in addition the matching problem of input and output microwave circuit, and can obtain best impedance matching.
2) since adopt the constant part of microwave low-pass filter network film phase shifter and variable part construct respectively on the normal dielectric constant substrate with the adjustable BZT film of voltage on form, reduce the mismatch in the microwave low-pass filter network system and inserted loss, thereby obtained less standing-wave ratio.
3) the present invention is by the voltage control phase shift, and direct current dissipates and levels off to zero, so the control power consumption is little, the insertion loss is low, stable performance, reliability, adjustability height.
4) phase shift of the present invention both can be adjustable continuously, also can be by the programming Control of voltage being realized the digital phase shift of any digit.Increase the figure place of digital phase shifter simultaneously, do not need to increase radio frequency (RF) network.
5) manufacture craft of the present invention is simple, is applicable to general thin-film technique, and cost is low relatively.
6) ferroelectric thin film of selecting for use among the multilayer dielectricity that the present invention adopts has high adjustability, low-loss characteristics; Selected substrate dielectric constant is low, loss is little, surface topography is smooth.These factors all help the raising of systematic function.
In sum, the present invention proposes this phase shifter and has the following advantages: stable performance, and good impedance matching, loss is little, and circuit topological structure is simple, and technology is easy to realize that size is little, and is in light weight.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 is the structural perspective of the microwave distributed constant low-pass filter network phase shifter of the embodiment of the invention;
Fig. 2 is the lumped parameter low-pass filter network phase shifter schematic diagram of the embodiment of the invention, and wherein, capacitor C is a variable;
Fig. 3 is the structure vertical view of the microwave distributed constant low-pass filter network phase shifter of the embodiment of the invention;
Fig. 4 is the partial enlarged drawing of capacitance structure of the microwave distributed constant low-pass filter network phase shifter of the embodiment of the invention, and wherein, capacitor C is interdigital electric capacity; Interdigital electric capacity is voltage adjustable thin film electric capacity; Frame of broken lines is represented the position at ferroelectric thin film place;
Fig. 5 is the phase shift parameters of the phase shifter of the present invention that obtains by Computer Simulation;
Fig. 6 inserts loss and return loss by the phase shifter of the present invention that Computer Simulation obtains.
Embodiment
Technical scheme provided by the present invention is constructed respectively on the normal dielectric constant substrate and the form on the adjustable ferroelectric thin film of voltage for the constant part that adopts microwave low-pass filter network film phase shifter and variable part.Particularly, adopt the comprehensive method of microwave network to derive low-pass filter network, obtain the microwave phase shift by voltage control to capacity cell in the microwave network.Simulate lumped parameter (L, C) with distributed constant, by changing the distributed capacitance parameter value in the network, realize the microwave phase shift, the change of distributed capacitance parameter value is that to utilize the character of ferroelectric thin film be that the voltage adjustability realizes in the network.
See also Fig. 1, Fig. 1 is the structural perspective of the microwave distributed constant low-pass filter network phase shifter of the embodiment of the invention.As shown in the figure, the microwave low-pass filter network ferroelectric thin-membrane phase shifter of the embodiment of the invention is a sandwich construction, and it is made up of substrate (10), ferroelectric thin film (20), surface electrode and hearth electrode, and has the sandwich construction of microwave filtering network (30).Described microwave filtering network partly is made up of variable distribution argument section and immutable distributed constant; The variable distribution argument section of described microwave filtering network is constructed on ferroelectric thin film (20), and the immutable distributed constant of described microwave filtering network is partly constructed on the substrate (10) of low-k, low-loss medium.
See also Fig. 2, Fig. 2 is the lumped parameter low-pass filter network schematic diagram of the embodiment of the invention, and wherein, capacitor C is a variable.Before making microwave low-pass filter network ferroelectric thin-membrane phase shifter, can be according to designing requirement, adopt network synthesis, based on decay and phase shift function, utilize the network synthesis theory, obtain the prototype circuit of lumped-parameter element low-pass filter network earlier, then each element in the lumped-parameter element prototype circuit is realized with microwave structure.Promptly replace lumped parameter model, carry out Computer Simulation and optimization, thereby obtain optimum scheme with Ansoft microwave software with distributed parameter model.
In the embodiment of the invention, this phase shifter has utilized the phase delay characteristic of low pass filter to realize phase shift.According to the normalization and the no consumption situation of consideration of network, we can derive phase shift
Relation with inductance L and capacitor C: promptly
From above-mentioned formula as can be seen, need only the phase-shift phase of expecting according to us
, just can calculate the inductance L and the capacitor C value of lumped parameter.Then, replace above lumped inductance parameter and lumped capacitance parameter with distributed inductance parameter and distributed capacitance parameter, and, tunable capacitor is realized by the interdigital electric capacity of the adjustable film of voltage, change its capacitance by voltage, thereby realize phase shift.
See also Fig. 3, Fig. 3 is the structure vertical view of the microwave distributed constant low-pass filter network ferroelectric thin-membrane phase shifter of the embodiment of the invention.In an embodiment of the present invention, microwave low-pass filter network circuit part is two joint low-pass filter network cascades, if the phase shift of required ferroelectric thin-membrane phase shifter is bigger, can realize by the mode of many low-pass filter networks cascade.
As shown in Figure 3, the immutable distributed constant of this microwave distributed constant low-pass filter network ferroelectric thin-membrane phase shifter partly is 50 Ω transmission lines (11), impedance matching circuit (51) and distributed constant inductance (31), the variable distribution argument section is distributed constant electric capacity (21,41), and this distributed constant electric capacity (21,41) is the interdigital electric capacity of the adjustable distributed constant of voltage.
Wherein, the surface electrode (61) of 50 Ω transmission lines (11), distributed constant inductance (31), impedance matching circuit (51), power pack and hearth electrode (71) are directly constructed on the dielectric substrate of low-loss, low-k and high reliability.This impedance matching circuit (51) is at least the quarter-wave impedance conversion line on two rank.
The embodiment of the invention is just considered the matching problem with system when analog simulation, radiofrequency signal input and output and power supply circuits are placed in the microwave circuit topological model simulation optimization together, promptly can obtain best impedance matching.
This substrate can be selected material commonly used such as magnesium oxide, lanthanuma luminate single crystal for use, and preferably, (chemical formula is (La can to select a kind of new monocrystal material aluminium tantalum strontium lanthanum that occurs in recent years for use
0.18Sr
0.82) (Al
0.59Ta
0.41) O
3, be abbreviated as LSAT usually) and as substrate.Aluminium tantalum strontium lanthanum has surface smoothness preferably, lower micro-wave dielectric constant and loss, high cost performance.50 Ω transmission lines (11) that relate in the device and surface electrode (61) and hearth electrode (71) are more preferably made by the technology of microelectronics processing by gold thin film, and the thickness of gold thin film is not less than 0.5 micron.This design has guaranteed that preferably device and external circuit form good coupling.
See also Fig. 4, Fig. 4 is the partial enlarged drawing of capacitance structure of the microwave distributed constant low-pass filter network phase shifter of the embodiment of the invention, and wherein, capacitor C is interdigital electric capacity; Interdigital electric capacity is voltage adjustable thin film electric capacity; Frame of broken lines is represented the position at ferroelectric thin film place.In an embodiment of the present invention, the interdigital electric capacity of four distributed constants (21,41) is constructed on ferroelectric thin film, be of a size of 0.5mm * 0.3mm, interdigital electric capacity (21) is of a size of 0.3mm with adjacent interdigital electric capacity (41) minimum spacing, be the length of little band distributed inductance (31), change the capacitance of interdigital electric capacity by the power supply of adjusting interdigital electric capacity, thereby make low-pass filter network produce phase delay, form phase shift.
More common ferroelectric thin-flim materials is that (chemical formula is Ba to barium strontium titanate
1-xSr
xTiO
3); Barium strontium titanate has dielectric adjustable energy preferably, but since titanium itself have+3 and+4 two kinds of valence states, the ion that is difficult to guarantee all titaniums in film all is to be in+4 valence state, and the variation between these two kinds of valence states will cause the increase of spillage of material.In an embodiment of the present invention, (chemical formula is BaZr to select barium zirconium phthalate
1-xTi
xO
3, write a Chinese character in simplified form and make BZT) and system replacement barium strontium titanate system.Barium zirconium phthalate has relatively little dielectric loss.In addition, by meticulous growth technique control, the barium zirconium phthalate film has less crystallite dimension, also helps improving drain performance, and therefore, under equal condition, the phase shifter that the barium zirconium phthalate film is made has comprehensive performance.
The physical model and the Mathematical Modeling phase shifter of a kind of new type of microwave low-pass filter network ferroelectric thin-membrane phase shifter that the present invention proposes, its beneficial effect can be embodied well by Fig. 5 and Fig. 6.
See also Fig. 5, Fig. 5 is the phase shift parameters of the phase shifter of the present invention that obtains by Computer Simulation.As shown in the figure, be example with microwave low-pass filter network two-stage cascade: frequency is when 9GHz, and start-phase is-80 ° (i.e. points of A on the dotted line among the figure); Adjustability as BZT under applied voltage reaches 20%, and phase place is-65 ° (i.e. points of B on the dotted line among the figure), compares the phase shift that starting point has promptly realized 15 °; If the adjustability of BZT reaches at 60% o'clock (i.e. the point of C on the dotted line among the figure), at this moment, corresponding realization phase-shift phase is about 50 °.If need bigger phase-shift phase, can realize by multistage microwave low-pass filter network cascade.
See also Fig. 6, Fig. 6 inserts loss and return loss for the phase shifter of the present invention that obtains by Computer Simulation.As shown in the figure, insert loss and be subjected to the influence of interdigital electric capacity (21,41) voltage adjustability very little, insert loss in whole frequency band; In change in voltage, insert loss remain at-0.5dB in, return loss all remains in whole frequency band-below the 14dB, and interdigital capacitance variations is big more, return loss is more little.
In sum, microwave low-pass filter network ferroelectric thin-membrane phase shifter of the present invention can reach following the key technical indexes:
Frequency range: X-band;
Can realize maximum phase-shift phase: 180 °
Input and output standing-wave ratio:＜1.5
Phase error root-mean-square value: 1 ° of rms
The state exchange time:＜50ns
Simply introduce the preparation method of the thin-film phase shifter for micro-wave filter network of the embodiment of the invention below.This method comprises the steps:
Step S1: before growth, substrate surface will cover the mask plate of a given shape, and to block substrate surface do not need the to grow part of ferroelectric thin film, mask plate can be made with thin stainless steel; Wherein, the described given shape variable distribution parametric circuit of described microwave filtering network that is used to grow.
Step S2: adopt the growing method of pulsed laser deposition (PLD) or magnetron sputtering etc., go up growth one deck ferroelectric thin film at substrate (LSAT), for example, barium zirconium phthalate, and in the process of deposit film, control lower partial pressure of oxygen as far as possible; With the pulse laser method is example, and partial pressure of oxygen should be lower than 5Pa, and lower partial pressure of oxygen helps reducing the crystallite dimension of ferroelectric thin film, improves final microwave dielectric property.
Step S3: the heat treatment that the film that makes is improved film quality together with substrate under higher temperature.
Step S4: adopt photoetching process on substrate, to make the immutable distributed constant part of surface electrode, hearth electrode and microwave filtering network; Wherein, described immutable distributed constant partly is 50 Ω transmission lines, impedance matching circuit and distributed constant inductance.The thickness of gold thin film is not less than 500 nanometers; And the nickel film that prefabricated one deck is thin between gold thin film and film and the substrate is to strengthen adhesive force.
It should be noted last that, above embodiment is only unrestricted in order to technical scheme of the present invention to be described, although the present invention is had been described in detail with reference to preferred embodiment, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement technical scheme of the present invention, and not break away from the spirit and scope of technical solution of the present invention.
Claims (10)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587988B (en) * | 2009-05-25 | 2013-03-06 | 中国兵器工业第二0六研究所 | Method for selecting 'zero phase shift remanence operating point' of magnetic flux excitation ferrite phase shifter |
| CN103107387A (en) * | 2013-02-08 | 2013-05-15 | 华为技术有限公司 | Phase shifter with filter element, filter element and antenna |
| CN104241735A (en) * | 2013-06-20 | 2014-12-24 | 成都国腾电子技术股份有限公司 | Microwave phase shifter based on micro-mechano-electronic technology |
| CN107742579A (en) * | 2017-09-21 | 2018-02-27 | 天津大学 | Preparation method of barium zirconate titanate film voltage-controlled varactor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1932080A (en) * | 2005-09-12 | 2007-03-21 | 电子科技大学 | Prepn process of boron strontium titanate film material |
| CN100495811C (en) * | 2005-09-12 | 2009-06-03 | 中国科学院物理研究所 | ferroelectric phase shifter |
| CN100419118C (en) * | 2006-04-17 | 2008-09-17 | 湖北大学 | A kind of preparation method of strontium barium titanate ferroelectric thin film |
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2007
- 2007-09-10 CN CN2007101496517A patent/CN101388480B/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101587988B (en) * | 2009-05-25 | 2013-03-06 | 中国兵器工业第二0六研究所 | Method for selecting 'zero phase shift remanence operating point' of magnetic flux excitation ferrite phase shifter |
| CN103107387A (en) * | 2013-02-08 | 2013-05-15 | 华为技术有限公司 | Phase shifter with filter element, filter element and antenna |
| CN104241735A (en) * | 2013-06-20 | 2014-12-24 | 成都国腾电子技术股份有限公司 | Microwave phase shifter based on micro-mechano-electronic technology |
| CN104241735B (en) * | 2013-06-20 | 2017-05-10 | 成都振芯科技股份有限公司 | Microwave phase shifter based on micro-mechano-electronic technology |
| CN107742579A (en) * | 2017-09-21 | 2018-02-27 | 天津大学 | Preparation method of barium zirconate titanate film voltage-controlled varactor |
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| CN101388480B (en) | 2012-07-25 |
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