CN101345392B - Low-loss semiconductor pump laser - Google Patents
Low-loss semiconductor pump laser Download PDFInfo
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- CN101345392B CN101345392B CN200810070753.4A CN200810070753A CN101345392B CN 101345392 B CN101345392 B CN 101345392B CN 200810070753 A CN200810070753 A CN 200810070753A CN 101345392 B CN101345392 B CN 101345392B
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- crystal
- frequency
- linear
- laser
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 230000010287 polarization Effects 0.000 claims abstract description 15
- 230000007704 transition Effects 0.000 claims abstract description 14
- 238000005086 pumping Methods 0.000 claims abstract description 5
- 229910017502 Nd:YVO4 Inorganic materials 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 5
- -1 rare earth ion Chemical class 0.000 description 5
- 229910052761 rare earth metal Inorganic materials 0.000 description 5
- 230000003595 spectral effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004471 energy level splitting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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Abstract
The invention discloses a low loss semiconductor pumped laser comprising a pumping system outputting light around 1083nm wavelength as fundamental frequency light and a laser cavity including a laser cavity tablet, a laser gain medium and nonlinear frequency-doubling crystal, wherein the laser gain medium is a Nd<3+>-doped laser gain medium. The polarization direction of the frequency-doubling crystal is perpendicular to the direction of optical axis of the laser gain medium to reduce the loss in cavity by arranging the relative position of the laser gain medium optical axis and the axial direction of the nonlinear frequency-doubling crystal or adding a halfwave plate between both using transition emission of Nd<3+> ion <4>F3/2 - <4>I11/2, thereby the loss of frequency-doubling light is reduced to minmum.
Description
Technical field
The present invention relates to laser field, particularly relate to a kind of employing
4f
3/2→
4i
11/2transition launch near 1083nm the emitting fluorescence of wavelength as low-loss semiconductor pump laser in the chamber of fundamental frequency light.
Background technology
In the gain medium of Nd ion doping,
4f
3/2→
4i
11/2fluorescent transition intensity in transition near 1064nm is the strongest, general employing 1064nm wavelength as fundamental frequency light to realize frequency multiplication or frequency tripling, to obtain green glow or ultraviolet light output, semiconductor pump laser as shown in Figure 1, 2, it comprise pumping system 100, laser cavity chamber sheet 101,102,105, uniform dielectric gain medium 103 is as Nd:YAG and frequency doubling non-linear's crystal 104.
For the laser medium material of Nd doping, about 532nm wavelength just in time drops on the secondary peak of Nd Ions Absorption characteristic peak.In order to the frequency multiplication or frequency tripling that realize 1064nm wavelength export, reduce cavity loss, usually adopt refrative cavity or add other optics, making the light of 532nm wavelength without laser gain material, to reach the object reducing cavity loss.Utilize these methods, the loss in laser cavity can be reduced, but complicated structure, for its application brings certain difficulty.
For rare earth ion doped system, the level structure of rare earth ion can adopt central field to be similar to and obtain, and the f layer electronics of rare earth ion is in the shielding action of outer shell, can be similar to think free ion.The energy level of such rare earth ion can be used
2S+1l
jrepresent.For the free atom not under outfield is done or ion, one group of LSJ only corresponds to an energy level.In gain medium, rare earth ion is subject to the effect of crystalline field,
2S+1l
jenergy level splitting becomes many spectral lines.As shown in Figure 2, at Nd
3+in ion,
4f
3/2multiplet splitting becomes R
1and R
2article two, spectral line, and
4i
11/2multiplet splitting becomes Y
1to Y
6totally 6 spectral lines.
At Nd:YVO
4in crystal, Nd ion occupies D in crystal
2dthe position of point group, according to transition selective rule, for
4f
3/2→
4i
11/2transition, in σ polarization spectrum, is allow from R spectral term to all transition of Y spectral term; And in the spectrum of π polarization, only have R
1→ Y
2, Y
4, Y
6, and R
2→ Y
1, Y
3, Y
5transition is license.At doping Nd
3+in the gain medium of ion, the introducing of impurity, affects to some extent on fluorescent radiation, and the transition originally forbidden also can occur, but its probability is very little, can be without a moment's thought.
Theoretical according to Judd-Ofelt, calculate and find Nd:YVO
4crystal is R on π polarization direction
1→ Y
2(wave number is 9396cm in transition
-1, and 1064nm) transition probability be 0.2291, R on σ polarization direction
1→ Y
5(wave number is 9230cm in transition
-1, and 1083nm) transition probability be 0.1812 (Luo Zundu, eds.J.Phys.:Condens.Matter vol.6, pp.3737-3748).In normal temperature fluorometric investigation, the existence of this two wave bands transition can be found.
Gain medium Nd:YVO as shown in Figure 3
4fluorescence curve, single crystal fiber (a), monocrystalline (b) (D.ReyesArdilaeds.J.Crystal Growth vol.233 pp.253-258).With the frequency doubled light that the fundamental frequency light near 1083nm produces, crystal σ polarization direction is just dropped on
4i
9/2→
4g
7/2+
4g
9/2in the ABSORPTION EDGE of absorptive transition, crystal is almost equivalent to the absorption of material itself to the absorption of this wavelength light, and loss is little; And on π polarization direction, this wave band also drops on
4i
9/2→
4g
7/2+
4g
9/2within the scope of absorptive transition, also belong to Nd
3+the characteristic absorption of ion, loss is large.For other crystal with structure optical axis, also there is similar phenomenon, as: Nd:LuVO
4, Nd:GdVO
4deng.
Summary of the invention the object of the invention is to provide a kind of using wavelength light near 1083nm as fundamental frequency light, the low-loss semiconductor pump laser that structure is simple, the loss of energy is little.
The present invention adopts following structure: semiconductor pump laser comprises and to export near 1083nm wavelength light as fundamental frequency light pumping system, laser cavity, laser cavity comprises laser cavity chamber sheet, gain medium and frequency doubling non-linear's crystal, and gain medium is for mixing Nd
3+gain medium, adopt Nd
3+ion
4f
3/2→
4i
11/2transition is launched, wherein
A. when frequency doubling non-linear's crystal adopts a type-Ⅱphase matching, and when adopting o+o → e structure, the axis of frequency doubling non-linear's crystal and the optical axis of gain medium are parallel to each other, and frequency doubled light relative laser gain media is σ polarization;
B. when frequency doubling non-linear's crystal adopts a type-Ⅱphase matching, and when adopting e+e → o structure, the axis of frequency doubling non-linear's crystal is mutually vertical with the optical axis of gain medium, and frequency doubled light relative laser gain media is σ polarization;
C. when frequency doubling non-linear's crystal adopts two type-Ⅱphase matching, and when adopting o+e → o structure, half-wave plate is inserted between frequency doubling non-linear's crystal and gain medium, the optical axis of half-wave plate is placed in optical direction, and gain medium optical axis and frequency doubling non-linear's crystal axis between angle on separated time, making frequency doubled light be equivalent to gain medium is o light.
Above-mentioned laser cavity is discrete laser cavity or micro-piece type laser cavity.
The above-mentioned gain medium mixing Nd3+ refers to Nd:YVO4, Nd:GdVO4, Nd:LuVO4.
The present invention adopts said structure, for different frequency doubling non-linear's crystal, by arrange gain medium optical axis and frequency doubling non-linear's crystal axis to relative position, or add half-wave plate between, make the polarization direction of its frequency doubled light and gain medium optical axis direction orthogonal, to reduce cavity loss, thus make frequency doubled light obtain loss to drop to minimum.This structure, in high-power frequency multiplication or frequency tripling laser, has greater advantage to the simplification of structure.
Accompanying drawing explanation
Now by reference to the accompanying drawings the present invention is further elaborated:
Fig. 1 is the structural representation of one of existing semiconductor pump laser;
Fig. 2 is the structural representation of existing semiconductor pump laser two;
Fig. 3 is the schematic diagram of gain medium Nd:YVO4 fluorescence curve;
Fig. 4 is the structural representation of one of semiconductor pump laser of the present invention;
Fig. 5 is the structural representation of semiconductor pump laser two of the present invention;
Fig. 6 is the structural representation of semiconductor pump laser three of the present invention.
Embodiment
Refer to shown in Fig. 4 or 5, near the present invention includes output 1083nm, wavelength light is as fundamental frequency light pumping system 100, laser cavity 10, laser cavity 10 comprise laser cavity chamber sheet 101,102, gain medium 103 and frequency doubling non-linear's crystal 104, gain medium is for mixing Nd
3+gain medium, be commonly referred to as Nd:YVO
4, Nd:GdVO
4, Nd:LuVO
4etc. a series of Nd
3+the gain medium of doping, adopts Nd
3+ion
4f
3/2→
4i
11/2transition is launched, and wherein when frequency doubling non-linear's crystal 104 adopts a type-Ⅱphase matching, and when adopting o+o → e structure, the axis of frequency doubling non-linear's crystal 104 and the optical axis of gain medium 103 are parallel to each other, and frequency doubled light relative laser gain media 103 is σ polarization; When frequency doubling non-linear's crystal 104 adopts a type-Ⅱphase matching, and when adopting e+e → o structure, the axis of frequency doubling non-linear's crystal 104 is mutually vertical with the optical axis of gain medium 103, and frequency doubled light relative laser gain media 103 is σ polarization; Two states all must to prove near 1083nm frequency doubled light relative laser gain media 103 for σ polarization, thus makes frequency doubled light obtain loss to drop to minimum.
Refer to shown in Fig. 6, when frequency doubling non-linear's crystal 104 adopts two type-Ⅱphase matching, and when adopting o+e → o structure, half-wave plate 106 is inserted between frequency doubling non-linear's crystal 104 and gain medium 103, the optical axis of half-wave plate 106 is placed in optical direction, and gain medium 103 optical axis and frequency doubling non-linear's crystal 104 axially between angle on separated time, if the angle of the optical axis of half-wave plate 106 and optical direction is
, the angle of gain medium 103 optical axis and optical direction is 90 °, and frequency doubling non-linear's crystal 104 is axial is θ with the angle of optical direction, namely
, so utilize wave plate structure, the frequency doubled light of generation rotated a certain angle, make frequency doubled light be equivalent to gain medium 103 for o light, to reduce cavity loss.
Above-mentioned laser cavity is discrete laser cavity or micro-piece type laser cavity.
The present invention is particularly useful for the microchip intracavity frequency doubling laser of tight structure.
Claims (1)
1. a low-loss semiconductor pump laser, near comprising output 1083nm, wavelength light is as fundamental frequency light pumping system, laser cavity, laser cavity is discrete laser cavity or micro-piece type laser cavity, laser cavity comprises laser cavity chamber sheet, gain medium and frequency doubling non-linear's crystal, gain medium is the gain medium mixing Nd3+, and the gain medium mixing Nd3+ refers to Nd:YVO4, Nd:GdVO4 or Nd:LuVO4; Adopt Nd3+ ion 4F3/2 → 4I11/2 transition to launch, it is characterized in that:
A. when frequency doubling non-linear's crystal adopts a type-Ⅱphase matching, and when adopting o+o → e structure, the axis of frequency doubling non-linear's crystal and the optical axis of gain medium are parallel to each other, and frequency doubled light relative laser gain media is σ polarization;
B. when frequency doubling non-linear's crystal adopts a type-Ⅱphase matching, and when adopting e+e → o structure, the axis of frequency doubling non-linear's crystal is mutually vertical with the optical axis of gain medium, and frequency doubled light relative laser gain media is σ polarization;
When frequency doubling non-linear's crystal adopts two type-Ⅱphase matching, and when adopting o+e → o structure, half-wave plate is inserted between frequency doubling non-linear's crystal and gain medium, the optical axis of half-wave plate is placed in optical direction, and gain medium optical axis and frequency doubling non-linear's crystal axis between angle on separated time, making frequency doubled light be equivalent to gain medium is o light.
Priority Applications (1)
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|---|---|---|---|
| CN200810070753.4A CN101345392B (en) | 2008-03-18 | 2008-03-18 | Low-loss semiconductor pump laser |
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|---|---|---|---|
| CN200810070753.4A CN101345392B (en) | 2008-03-18 | 2008-03-18 | Low-loss semiconductor pump laser |
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| CN101345392A CN101345392A (en) | 2009-01-14 |
| CN101345392B true CN101345392B (en) | 2015-06-17 |
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| CN102025093A (en) * | 2010-11-02 | 2011-04-20 | 刘文祥 | Cluster laser |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0596714A1 (en) * | 1992-11-06 | 1994-05-11 | Mitsui Petrochemical Industries, Ltd. | Solid state laser apparatus |
| CN101051730A (en) * | 2006-04-05 | 2007-10-10 | 福州高意通迅有限公司 | Intracavity frequency multiplier laser |
| CN200965974Y (en) * | 2006-04-04 | 2007-10-24 | 福州高意通迅有限公司 | Microchip laser |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19836712B4 (en) * | 1998-08-13 | 2008-02-21 | Carl Zeiss Meditec Ag | Frequency-doubled, diode-pumped solid-state lasers |
| US7606274B2 (en) * | 2001-09-20 | 2009-10-20 | The Uab Research Foundation | Mid-IR instrument for analyzing a gaseous sample and method for using the same |
-
2008
- 2008-03-18 CN CN200810070753.4A patent/CN101345392B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0596714A1 (en) * | 1992-11-06 | 1994-05-11 | Mitsui Petrochemical Industries, Ltd. | Solid state laser apparatus |
| CN200965974Y (en) * | 2006-04-04 | 2007-10-24 | 福州高意通迅有限公司 | Microchip laser |
| CN101051730A (en) * | 2006-04-05 | 2007-10-10 | 福州高意通迅有限公司 | Intracavity frequency multiplier laser |
Non-Patent Citations (5)
| Title |
|---|
| Generation of tunable green radiation in bulk periodically poled KTiOPO4;P.Zeppini,et al;《OPTICS AND LASRS in ENGINEERING》;20021231;第37卷;553-563 * |
| Growth of yttrium orthovanadate by LHPG in isostatic oxygen atmosphere;D.Reyes Ardila, et al;《JOURNAL OF CRYSTAL GROWTH》;20011231;第233卷;253-258 * |
| Modelocking of CW Nd:YAG laser using nonlinear polarisation evolution in type II frequency doubling crystal;V.coudere, et al;《ELECTRONICS LETTERS》;19980402;第34卷(第7期);672-673 * |
| 刘博,等.BBO晶体I类相位匹配从可见光到近红外光宽带参量放大的带宽研究.《中国激光》.2007,第34卷(第1期),21-27. * |
| 李健,等.大功率激光二极管抽运Nd:YVO4激光器的特性研究.《光学学报》.2000,第20卷(第4期),485-488. * |
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