CN101339971B - Light emitting diode packaging structure - Google Patents

Abstract

The invention provides a light emitting diode packaging structure which comprises a bearing unit, a light emitting diode chip and a composite material layer. The light emitting diode chip is positioned on the bearing unit; the composite material layer partially or completely covers the surface of the bearing unit close to the light-emitting diode chip. The composite material layer comprises a resin material and an inorganic dielectric material, wherein the resin material has a first refractive index; the inorganic dielectric material is mixed in the resin material and has a second refractive index, wherein the first refractive index is smaller than the second refractive index, and the difference between the first refractive index and the second refractive index is at least larger than 0.2. The invention can improve the reflectivity of the light-emitting diode packaging structure to light rays through material modification, improve the light-emitting efficiency of the light-emitting diode packaging structure and greatly prolong the service life of the light-emitting diode packaging structure.

Description

Light-emitting diode packaging structure

technical field

The invention relates to a light emitting diode packaging structure, in particular to a light emitting diode packaging structure with high reflectivity and high heat resistance.

Background technique

In response to the goal of saving energy, it has become the mainstream research of luminous technology to find out the luminous source that can replace the known poor luminous efficiency. In terms of the current technology, the most potential alternative luminous source should be the light-emitting diode.

However, it is well known that in terms of the existing light emitting diode packaging structure, taking the reflection cup structure as an example, it can be made of resin or ceramic materials, wherein the heat conduction effect of the reflection cup of ceramic material is better than that of resin material, but , the light-emitting diode package structure made of ceramic materials (such as: aluminum nitride) can only reach the specifications of about 3.0 mm * 2.0 mm * 1.2 mm in the minimum size limit of length, width, and height, and can only be formed with a right-angle shape. The packaging structure of the state cannot meet the needs of the miniaturized LED packaging structure, and is not conducive to the reflection of light. Therefore, for portable display devices that need to use the miniaturized LED packaging structure as a light source, it is still necessary to use a resin material ( For example: reflective cups made of poly(p-phenylene terephthalamide, PPA). However, due to the poor heat resistance of the resin material itself, for example, after 126 hours of operation at an operating temperature of 140 degrees Celsius, poly-p-phenylene terephthalamide will suffer from obvious yellowing and deterioration problems.

Therefore, how to provide a light emitting diode packaging structure, which has higher reflectivity and longer operation time compared with the known reflective cup made of resin material, is one of the current important issues.

Contents of the invention

In view of the above problems, the purpose of the present invention is to provide a light emitting diode packaging structure, which can effectively reflect the light emitted by the light emitting diode chip to increase the light extraction efficiency of the light emitting diode packaging structure, and at the same time make the light emitting diode packaging structure more durable. Long-term operation without yellowing or deterioration.

To achieve the above purpose, the present invention discloses a light emitting diode packaging structure, which includes a carrying unit, a light emitting diode chip, located on the carrying unit, and a composite material layer, completely or partially covering the carrying unit close to the light emitting diode chip On the surface, the composite material layer includes a resin material with a first refractive index; and an inorganic dielectric material mixed in the resin material, the inorganic dielectric material has a second refractive index, wherein the first refractive index is less than a second refraction index, and the difference between the first refraction index and the second refraction index is at least greater than 0.2.

To achieve the above purpose, the present invention also discloses a light emitting diode packaging structure, which includes a carrying unit and a light emitting diode chip. The carrying unit has a bottom and a side wall to form an accommodating space, and the LED chip is located on the bottom and in the accommodating space. The carrying unit includes a resin material and an inorganic dielectric material, the resin material has a first refractive index, the inorganic dielectric material is mixed in the resin material, and the inorganic dielectric material has a second refractive index, wherein the first refractive index The index is smaller than the second refraction index, and the difference between the first refraction index and the second refraction index is at least greater than 0.2.

The above-mentioned resin material can be made of silica gel, and the refractive index (first refractive index) of the resin material is between 1.3 and 1.6.

The inorganic dielectric material can choose boron nitride, aluminum oxide, aluminum nitride, beryllium oxide, barium sulfate, magnesium oxide or zirconium oxide, and the inorganic dielectric material (second refractive index) is between 1.7 and 2.3 .

In addition, the weight percentage of the inorganic dielectric material mixed with the resin material is greater than 10%, more specifically, the weight percentage should be between 10% and 40%.

And the reflectivity of the composite material layer composed of resin material and inorganic dielectric material to visible light or ultraviolet light is greater than or equal to 85%.

Based on the above, according to a light-emitting diode packaging structure of the present invention, it utilizes inorganic dielectric materials mixed in the resin material to improve the reflectivity of the composite material, so that the light-emitting diodes located on the carrying unit or in the accommodating space of the carrying unit The light generated by the light-emitting diode chip inside is emitted out of the packaging structure after being effectively reflected. Accumulate or affect the LED packaging structure. Therefore, even for ultraviolet light-emitting diode chips with relatively strong energy, the light-emitting diode packaging structure disclosed in the present invention can still reduce yellowing and deterioration caused by the accumulation of light energy through the light reflection characteristics of the composite material. .

Compared with the known technology, the present invention can improve the light reflectance of the light-emitting diode packaging structure by modifying the material, and the above-mentioned purpose can be achieved without changing the existing manufacturing method. Therefore, the present invention can not only improve the luminous The light extraction efficiency of the diode packaging structure, and because of its excellent reflection and heat resistance characteristics, greatly prolongs the service life of the light emitting diode packaging structure.

Description of drawings

1A is a perspective view of a light emitting diode packaging structure;

FIG. 1B is a cross-sectional view of the light emitting diode package structure along the section line L in FIG. 1A;

Fig. 1C is a perspective view of another aspect of Fig. 1A;

Fig. 2 is another embodiment of the light emitting diode packaging structure of the present invention;

Fig. 3 is yet another embodiment of the LED packaging structure of the present invention; and

FIG. 4 is another embodiment of the packaging structure of the light emitting diode of the present invention.

Figure number:

1a, 1a', 1b, 1c, 1d: LED packaging structure

11: Storage space

12, 12': carrying unit

121: Bottom

122, 122': side wall

13: Packaging colloid

14: LED chip

16: Composite layer

161: resin material

162: Inorganic Dielectric Materials

18: reflective electrode

L: cut line

Detailed ways

A light emitting diode packaging structure according to a preferred embodiment of the present invention will be described below with reference to related drawings.

First, please refer to FIG. 1A, FIG. 1B and FIG. 1C at the same time, wherein FIG. 1A is a perspective view of the LED package structure, and FIG. 1B is a cross-sectional view of the LED package structure along the section line L in FIG. 1A, and FIG. It is a perspective view of another aspect of FIG. 1A.

Firstly, according to the LED package structure 1 a shown in FIG. 1A and FIG. 1B , it includes a carrying unit 12 , an LED chip 14 , a composite material layer 16 and a reflective electrode 18 . A reflective electrode 18 is set between the carrying unit 12 and the LED chip 14, in other words, the reflective electrode 18 is set on the carrying unit 12, and the light emitting diode chip 14 is located on the reflective electrode 18; in this embodiment, the composite material layer 16 partially covers the on the surface of the carrying unit 12 close to the LED chip 14 .

Wherein, the carrying unit 12 includes a bottom 121 and a side wall 122 to form the accommodating space 11. In this embodiment, the bottom 121 is rectangular, and the LED chip 14 and the reflective electrode 18 are arranged on the bottom 121 and located at Inside this accommodating space 11. Moreover, according to FIG. 1A and FIG. 1B, it can be seen that the reflective electrode 18 here is described as an example in which the bottom 121 of the carrying unit 12 is not completely covered, but in fact, the reflective electrode 18 can also completely cover the carrying unit 12. The shape of the bottom 121 (not shown). In addition, although the bottom 121 and the side wall 122 described here are of separate structures, they can also be integrally formed.

Therefore, since the surface of the part of the bottom 121 is not covered by the reflective electrode 18 in this embodiment, the composite material layer 16 can completely cover the surface of the side wall 122 of the carrying unit 12 close to the LED chip 14, At the same time, it covers the surface of the bottom 121 that is not covered by the reflective electrode 18 , as shown in FIG. 1A and FIG. 1B .

The composite material layer 16 then includes a resin material 161 and an inorganic dielectric material 162 (as shown in the enlarged part in FIG. 1B ), the resin material 161 has a first refractive index; the inorganic dielectric material 162 is mixed with the resin material 161, and has a second refraction index, wherein the first refraction index is smaller than the second refraction index, and the difference between the first refraction index and the second refraction index is at least greater than 0.2.

For the formation position of the composite material layer 16, in addition to the aspect shown in FIG. That is, in addition to completely covering the surface of the side wall 122 of the carrying unit 12 close to the light-emitting diode chip 14, it also covers the above-mentioned reflective electrode 18 and the surface of the bottom 121 not covered by the reflective electrode 18; or, the composite material The layer 16 can also partially cover the sidewall 122 of the carrying unit 12 , as shown in the LED package structure 1 a ′ shown in FIG. 1C . Of course, the composite material layer 16 also partially covers the surface of the bottom 121 . It should be noted that since the accommodating space 11 formed by the bottom 121 and the side wall 122 of the light emitting diode package structure 1a' shown in FIG. For heat uniformity and light reflection efficiency, the composite material layer 16 is selectively covered on the sidewall 122 closer to the LED chip 14 , that is, the composite material layer 16 is covered on the surface of the longer sidewall 122 . It can be seen that no matter whether the composite material layer 16 partially covers the bearing unit 12 (including the bottom 121 and the side wall 122), or completely covers the bearing unit 12, the most important feature is that the composite material layer 16 must at least cover the surface of the carrying unit 12 that is closer to the light-emitting diode chip 14. Of course, the shape of the bottom 121 is not limited to the above-mentioned rectangular shape, and can also be other shapes, such as an ellipse. At this time, the composite material layer 16 may selectively cover the sidewall closer to the LED chip 14, that is, the composite material layer 16 covers at least the sidewall surface near the short axis of the ellipse.

And, the thickness of above-mentioned composite material layer 16 is greater than or equal to 0.1 millimeter (mm), but in actual application, the thickness of composite material layer 16 can change according to the design of different products, for example, composite material layer 16 is more likely to be Uniform thickness or thickness variation.

In terms of materials, the bottom 121 of the carrying unit 12 can be a circuit board, for example, made of epoxy resin (EPOXY), and the side wall 122 of the carrying unit 12 can be selected from silica gel, poly-p-phenylene terephthalamide (PPA ), polymethyl methacrylate (PMMA), epoxy resin (EPOXY), polyethylene terephthalate (PET), polycarbonate resin (PC) or polytetrafluoroethylene (PTFE) as materials; however, The supporting unit 12 can also be an integrated structure, that is, the bottom 121 and the side wall 122 are made of the same material, such as silica gel, poly-p-phenylene terephthalamide (PPA), polymethyl methacrylate (PMMA) , epoxy resin (EPOXY), polyethylene terephthalate (PET), polycarbonate resin (PC) or polytetrafluoroethylene (PTFE).

The above-mentioned resin material 161 in the composite material layer 16 is silica gel, and its corresponding first refractive index is between 1.3 and 1.6, while the inorganic dielectric material 162 in the composite material layer 16 can be made according to the requirements of different products. Design and requirements to select the group consisting of boron nitride, aluminum oxide, aluminum nitride, beryllium oxide, barium sulfate, magnesium oxide, zirconium oxide and their combinations, and the second refractive index corresponding to the above materials is Between 1.7 and 2.3. In addition, the weight percentage of the above-mentioned inorganic dielectric material 162 blended in the resin material 161 is greater than 10%. Or under the environment of ultraviolet light, it can achieve a reflectivity greater than or equal to 85%.

Accordingly, since the LED chip 14 in the embodiment of FIG. 1B is located on the reflective electrode 18 on the carrier unit 12 , and the composite material layer 16 covers the surface of the carrier unit 12 adjacent to the reflective electrode 18 . Therefore, when the light-emitting diode chip 14 is supplied with current and generates light, part of the light will be directly emitted to the outside of the light-emitting diode packaging structure 1a, as shown by the solid arrow in FIG. 1B , and part of the light will pass through the composite material layer. 16 to reflect to the outside of the LED packaging structure 1a, as shown by the dotted arrow in FIG. 1B. Therefore, the brightness provided by the LED packaging structure 1a disclosed in the present invention will be improved due to the increase in the amount of reflected light, and because the composite material layer 16 is a resin material 161 mixed with an inorganic dielectric material 162, it has a higher Excellent heat conduction characteristics can achieve a heat uniform effect, so that the heat originally concentrated near the LED chip 14 can be evenly dispersed through the cooperative arrangement of the composite material layer 16 and the reflective electrode 18 . Similarly, although the composite material layer 16 disclosed in FIG. 1C only partially covers the surface of the carrying unit 12 close to the LED chip 14, the configuration of the composite material layer 16 can still make the LED packaging structure 1a 'Achieve an effect similar to the above, so it will not be repeated here.

In addition, although the embodiments shown in FIG. 1A to FIG. 1C all take the composite material layer 16 covering the reflection cup as an example, the structure of the reflection cup shown in the figures is not intended to limit the scope of the present invention.

Furthermore, please refer to FIG. 2 , which is another embodiment of the LED packaging structure disclosed in the present invention. The LED packaging structure 1 b also includes a carrying unit 12 , a LED chip 14 and a composite material layer 16 . The carrying unit 12 includes a bottom 121 and a side wall 122 to form an accommodating space 11 , and the LED chip 14 is located on the bottom 121 of the carrying unit 12 and is located in the accommodating space 11 .

Wherein, although the bottom 121 and the side wall 122 in the carrying unit 12 are taken as an example of an independent structure, however, the bottom 121 and the side wall 122 can also be integrally formed, in other words, the bottom 121 and the side wall 122 in the carrying unit 12 can be Various processing methods are used to form an integrally formed structure.

Moreover, in order to match the structure of the bearing unit 12 in this embodiment, the position of the composite material layer 16 disclosed here completely covers the surface of the side wall 122, but it is not limited thereto, and the composite material layer 16 can also partially or completely cover on the surface close to the sidewall 122 and the bottom 121 of the LED chip 14 , or only partially cover the surface close to the sidewall 122 of the LED chip 14 . As far as the composition of the composite material layer 16 is concerned, it still includes a resin material 161 and an inorganic dielectric material 162 (as shown in the enlarged part in the figure), and the inorganic dielectric material 162 is mixed in the resin material 161; , the resin material 161 has a first refraction index, the inorganic dielectric material 162 has a second refraction index, and the relationship between the first refraction index and the second refraction index still conforms to the fact that the first refraction index is smaller than the second refraction index, and The difference between the first refractive index and the second refractive index is at least greater than 0.2. In addition, the thickness of the composite material layer 16 still conforms to the range greater than or equal to 0.1 mm.

In terms of materials, the carrying unit 12 , the resin material 161 in the composite material layer 16 and the inorganic dielectric material 162 in the composite material layer 16 can be selected from the materials shown in FIG. 1B , which will not be repeated here. The bottom 121 of the carrying unit 12 can be a circuit board, a lead frame, etc. structure. In addition, the material selected for the side wall 122 is similar to that of the bearing unit 12, in other words, it includes silica gel, poly-p-phenylene terephthalamide, polymethyl methacrylate, epoxy resin, polyethylene terephthalamide, etc. Formate, polycarbonate, polytetrafluoroethylene.

Accordingly, although the light-emitting diode chip 14 in this embodiment is located in the accommodating space 11 of the carrying unit 12, the composite material layer 16 is still formed at least on the surface of the carrying unit 12 close to the light-emitting diode chip 14 (that is, the composite material The layer 16 can be formed around the periphery of the LED chip 14, and can also be selectively formed on a partial surface of the carrying unit 12), therefore, similar to the embodiment shown in FIG. 1B, when the LED chip 14 is fed with current and After the light is generated, part of the light will be directly emitted to the outside of the LED packaging structure 1b, as shown by the solid arrow in FIG. Outside of structure 1b, as shown by the dotted arrow in Fig. 2. Therefore, the brightness provided by the LED packaging structure 1b disclosed in the present invention can be improved by increasing the amount of reflected light.

In addition to the above-mentioned embodiments shown in FIG. 1B and FIG. 2 , another embodiment of the present invention is disclosed in FIG. 3 for the packaging structure of the light emitting diode of the present invention. The LED packaging structure 1c of this embodiment includes a carrying unit 12' and a LED chip 14. The carrying unit 12' has a bottom 121 and a side wall 122', and the LED chip 14 is located on the bottom 121 of the carrying unit 12'. Wherein, the side wall 122' of the carrying unit 12' is a composite material layer 16, including a resin material 161 and an inorganic dielectric material 162 (as shown in the enlarged part in the figure), the resin material 161 has a first refractive index, The inorganic dielectric material 162 is mixed in the resin material 161, and the inorganic dielectric material 162 has a second refractive index, wherein the first refractive index is smaller than the second refractive index, and the difference between the first refractive index and the second refractive index Value is at least greater than 0.2.

As far as the structure of the carrying unit 12' is concerned, although the bottom 121 and the side wall 122' disclosed in FIG. The sidewall 122' can be formed as an integral structure through various processing methods.

In terms of materials, the bottom 121 of the carrying unit 12' can be a circuit board, and the sidewall 122' of the carrying unit 12' is a structure including a resin material 161 and an inorganic dielectric material 162 mixed in the resin material 161 .

It should be noted that the selection of the resin material 161 and the inorganic dielectric material 162 in this embodiment is the same as the above-mentioned embodiments disclosed in FIG. 1B and FIG. The refractive index is between 1.3 and 1.6, and the inorganic dielectric material 162 can be selected from the group consisting of boron nitride, aluminum oxide, aluminum nitride, beryllium oxide, barium sulfate, magnesium oxide, zirconium oxide, and combinations thereof to materials, and the second refractive index corresponding to the above materials is between 1.7 and 2.3. In addition, the weight percentage of the above-mentioned inorganic dielectric material 162 blended in the resin material 161 is greater than 10%, more precisely, the weight percentage should be between 10% and 40%, so that the resin material 161 and the inorganic dielectric The side wall 122' formed by the material 162 can achieve a reflectivity greater than or equal to 85% under the environment of visible light or ultraviolet light, or, if the bottom 121 and the side wall 122' in the carrying unit 12' are integrally formed At this time, the reflectivity of the carrying unit 12 ′ in the environment of visible light or ultraviolet light can reach greater than or equal to 85%.

Therefore, since the LED chip 14 in this embodiment is located on the bottom 121 of the carrying unit 12', and the sidewall 122' of the carrying unit 12' includes the resin material 161 and the inorganic dielectric material 162. Therefore, when the light-emitting diode chip 14 is supplied with current and generates light, part of the light will be emitted directly to the outside of the light-emitting diode package structure 1c, as shown by the solid arrow in FIG. 3 , and part of the light will pass through the resin material 161 Due to the high reflective properties of the inorganic dielectric material 162 , it can be reflected to the outside of the LED packaging structure 1c, as shown by the dotted arrow in FIG. 3 . Therefore, similar to the embodiments disclosed in FIG. 1B and FIG. 2 , this embodiment uses the carrying unit 12 ′ including the resin material 161 and the inorganic dielectric material 162 to effectively reflect the light from the LED chip 14 , so that The brightness provided by the overall LED package structure 1c is increased.

In addition, in the embodiment disclosed in FIG. 4 , the LED packaging structure 1 d includes a carrying unit 12 , a LED chip 14 , at least one reflective electrode 18 and a composite material layer 16 . The light-emitting diode chip 14 is located on the carrying unit 12; the reflective electrode 18 is located between the light-emitting diode chip 14 and the carrying unit 12, and the composite material layer 16 can partially or completely cover the carrying unit 12 adjacent to the reflective electrode 18. In more detail, from a top view (not shown), the composite material layer 16 covering the surface of the carrying unit 12 adjacent to the reflective electrode 18 is completely or partially surrounded by the light emitting diode chip 14 type of presentation.

Of course, the thickness of the composite material layer 16 described here still meets the requirement of greater than or equal to 0.1 mm, and is the same as the previous embodiment, the composite material layer 16 includes a resin material 161 and an inorganic dielectric material 162 (such as shown in the enlarged part of the figure), and the inorganic dielectric material 162 is mixed in the resin material 161; the resin material 161 has a first refractive index; the inorganic dielectric material 162 has a second refractive index, and the first The refraction index and the second refraction index still meet the range condition that the first refraction index is smaller than the second refraction index, and the difference between the first refraction index and the second refraction index is at least greater than 0.2.

Wherein, the carrying unit 12 can be a circuit board. Moreover, regarding the resin material 161 and the inorganic dielectric material 162 disclosed in this embodiment, the resin material 161 is silica gel, and its corresponding first refractive index is between 1.3 and 1.6, and the inorganic dielectric material 162 Boron nitride, aluminum oxide, aluminum nitride, beryllium oxide, barium sulfate, magnesium oxide, zirconium oxide and their combinations can be selected as materials, and the second refractive index corresponding to the above materials is medium Between 1.7 and 2.3.

It can be seen that, since the LED chip 14 in this embodiment is located on the carrying unit 12 , and the composite material layer 16 partially or completely covers the surface of the carrying unit 12 adjacent to the reflective electrode 18 . Therefore, in this embodiment, through the combined use of the composite material layer 16 and the reflective electrode 18, the light from the LED chip 14 can be effectively reflected, and the heat uniform effect can be achieved, so that the light generated by the LED chip 14 can pass through effectively. The composite material layer 16 and the reflective electrode 18 are used for reflection, so that the light extraction efficiency of the overall LED packaging structure 1d is improved, and the heat originally concentrated near the LED chip 14 can be dissipated by the composite material layer 16 and the reflective electrode 18. Disperse evenly.

Regardless of the above-mentioned light emitting diode packaging structures 1a, 1a', 1b, 1c, 1d shown in Figure 1A, Figure 1B, Figure 1C, Figure 2, Figure 3 or Figure 4, the light emitting diode chip 14 can be Visible light-emitting diode chips or ultraviolet light-emitting diode chips. Regardless of whether visible light LED chips or ultraviolet light LED chips are used, the composite material layer 16 of the present invention can improve the luminous efficiency of the LED packaging structure and prolong the service life of the LED packaging structure. However, it should be noted that for the LED packaging structure covered with a composite material layer on the carrying unit, if the inorganic dielectric material in the composite material layer covering the carrying unit is boron nitride, aluminum oxide or aluminum nitride , it is suitable for visible light-emitting diode chips or ultraviolet light-emitting diode chips, but if the inorganic dielectric material in the composite material layer covering the carrying unit is beryllium oxide, barium sulfate, magnesium oxide or zirconium oxide, it is only applicable to Ultraviolet light-emitting diode chips. In addition, for the LED packaging structure containing mixed resin materials and inorganic dielectric materials in the carrying unit, if the resin material is silica gel, it is suitable for visible light LED chips or ultraviolet light LED chips, but if the resin material is Polyparaphenylene terephthalamide, polymethyl methacrylate, epoxy resin, polyethylene terephthalate or polycarbonate resin are only suitable for visible light-emitting diode chips; and the choice of inorganic dielectric materials Same as above, that is, if the inorganic dielectric material in the carrying unit is boron nitride, aluminum oxide or aluminum nitride, it is suitable for visible light-emitting diode chips or ultraviolet light-emitting diode chips, but if the inorganic dielectric material in the carrying unit If the material is beryllium oxide, barium sulfate, magnesium oxide or zirconium oxide, it is only suitable for ultraviolet light-emitting diode chips.

Taking the LED packaging structure 1c shown in FIG. 3 as an example, since the carrying unit 12' is composed of a composite material layer 16 (including a resin material 161 and an inorganic dielectric material 162), the manufactured LED The packaging structure 1c can be reduced to 2.6 mm*1.6 mm*1.0 mm or smaller in length, width, and height (the manufacturing method can be injection molding), which meets the miniaturization specifications, and can also form a beveled shape Stateful packaging structure.

Especially, for the ultraviolet light emitting diode chip, because the resin material 161 of the composite material layer 16 is silica gel, and the inorganic dielectric material 162 is boron nitride, aluminum oxide, aluminum nitride, beryllium oxide, barium sulfate, oxide Magnesium or zirconia, so that the composite material layer 16 has an excellent reflectivity (at least greater than 85%) to ultraviolet light in the wavelength range of 300 nanometers to 430 nanometers, for example, silica gel mixed with boron nitride constitutes For the composite material layer (silicone/BN), under the irradiation of ultraviolet light with a wavelength of 365 nanometers and a light source intensity of 200mw/cm2, its reflectivity can be maintained at about 91%, and under 48 hours of operation time, the silicone/BN The reflectivity of the BN composite material layer only degrades by about 2%. However, the reflectance of known pure ceramic materials for ultraviolet light is lower than 80%, so the reflectivity of the light emitting diode package structure with composite material layer of the present invention for ultraviolet light is higher than that of known light emitting diode packages made of pure ceramic materials. Good structure.

In addition, the light emitting diode packaging structure 1b shown in FIG. 2, because the surface of the side wall 122 is covered with a composite material layer 16, compared with the generally known light emitting diode packaging structure, this light emitting diode packaging structure 1b is more suitable for packaging ultraviolet light emitting diode chips.

In addition, the structure of the encapsulant 13 is disclosed in the LED packaging structures 1a, 1a', 1b, 1c, and 1d shown in FIGS. 1A, 1B, 1C, 2, 3, and 4. And like the known packaging colloid, the packaging colloid 13 disclosed here may contain fluorescent substances (not shown in the figure), so that the light generated by the LED chip 14 can pass through the absorption and absorption of the fluorescent substance in the packaging colloid 13. The light converted to a specific wavelength range is emitted out of the LED packaging structures 1a, 1a', 1b, 1c, and 1d. In other words, the fluorescent substance in the encapsulant 13 can make the light generated by the LED chip 14 present a specific color, for example In other words, the use of different fluorescent substances can make the light passing through the encapsulating colloid 13 present red, green, blue, yellow, white, etc. colors.

In addition, according to the actual accelerated aging test results, the composite material layer (for example: silica gel mixed with 30% by weight of boron nitride, silicone/BN) and commonly known epoxy resin or polyterephthalamide Compared with amines, the composite material layer of silicone/BN has better thermal stability. Generally speaking, the reflectivity of the composite material layer of silicone/BN only declines to 85 when operating at an operating temperature of 140 degrees Celsius for about 1000 hours. %, and until the operation is close to 10,000 hours, the silicone/BN composite layer can still maintain a reflectivity close to 20%, in contrast to the operation of epoxy resin or poly-p-phenylene terephthalamide at 140 degrees Celsius The reflectivity of epoxy resin and poly(p-phenylene terephthalamide) declines to 70% and 25% respectively when the temperature is close to 1000 hours, and there is no reflected light at all until the operation is close to 10,000 hours In other words, epoxy resin and poly-p-phenylene terephthalamide are in such an operating state that the material itself has completely deteriorated. What's more worth mentioning is that the composite layer of silicone/BN can still maintain a reflectivity of about 85% after operating at an operating temperature of 160 degrees Celsius for 1000 hours. The reflectance of diamide-p-phenylenediamide declines to about 30% and 3%. Therefore, if the normal LED operating temperature is less than 80 degrees, the use of the silicone/BN composite material layer can greatly increase the service life of the LED packaging structure.

According to the above, the light emitting diode packaging structure disclosed in the present invention utilizes the better light reflection and heat resistance characteristics of the composite material mixed with the inorganic dielectric material in the resin material, so that the light energy and the heat generated by the chip are less likely to accumulate locally or Affects the packaging structure of light-emitting diodes. Therefore, even for ultraviolet light emitting diode chips with strong energy, the light emitting diode packaging structure disclosed in the present invention can still reduce yellowing and deterioration caused by the accumulation of light energy through the light reflection characteristics of the composite material .

The above descriptions are for illustration only, rather than limiting the present invention. Any equivalent modifications or changes made without departing from the spirit and scope of the present invention shall be included in the claims.

Claims (23)

1. a package structure for LED is characterized in that, described light-emitting diode comprises:

One load bearing unit;

One light-emitting diode chip for backlight unit is positioned on the described load bearing unit; And

One composite layer, local or be covered in the surface of described load bearing unit fully, described composite layer comprises:

One resin material has one first refraction coefficient, and first refraction coefficient is between 1.3 to 1.6; And

One Inorganic Dielectric Material, blending is in described resin material, described Inorganic Dielectric Material blending in the percentage by weight of described resin material greater than 10%, described Inorganic Dielectric Material has one second refraction coefficient, described second refraction coefficient is between 1.7 to 2.3, described first refraction coefficient is less than described second refraction coefficient, and the difference of described first refraction coefficient and described second refraction coefficient is at least greater than 0.2.

2. package structure for LED as claimed in claim 1 is characterized in that, described resin material is a silica gel.

3. package structure for LED as claimed in claim 1 is characterized in that, described Inorganic Dielectric Material is a boron nitride.

4. package structure for LED as claimed in claim 1 is characterized in that described Inorganic Dielectric Material is selected from the group that aluminium oxide, aluminium nitride, beryllium oxide, barium sulfate, magnesium oxide, zirconia and combination thereof are formed.

5. package structure for LED as claimed in claim 1 is characterized in that, described composite layer for the reflectivity of visible light or ultraviolet light more than or equal to 85%.

6. package structure for LED as claimed in claim 1 is characterized in that, described load bearing unit comprises a bottom and a sidewall and forms an accommodation space, and described light-emitting diode chip for backlight unit is positioned on the described bottom and is positioned at described accommodation space.

7. package structure for LED as claimed in claim 6 is characterized in that described composite layer is covered in the surface of described sidewall and described bottom.

8. package structure for LED as claimed in claim 1 is characterized in that described package structure for LED more comprises at least one reflecting electrode, and described reflecting electrode is between described light-emitting diode chip for backlight unit and described load bearing unit.

9. package structure for LED as claimed in claim 8 is characterized in that, described composite layer covers the surface adjacent to the described load bearing unit of described reflecting electrode.

10. package structure for LED as claimed in claim 1 is characterized in that, described light-emitting diode chip for backlight unit is a visible light emitting diode chip or a ultraviolet light-emitting diodes chip.

11. package structure for LED as claimed in claim 10 is characterized in that, the ultraviolet wavelength scope of described ultraviolet light-emitting diodes chip is between 300 nanometer to 430 nanometers.

12. package structure for LED as claimed in claim 1 is characterized in that, the dimensions of described load bearing unit is less than or equal to 1.0 millimeters of 1.6 millimeters * of 2.6 millimeters *.

13. a package structure for LED is characterized in that, described package structure for LED comprises:

One load bearing unit has a bottom and a sidewall and forms an accommodation space, and described sidewall is a composite layer, and described composite layer comprises:

One resin material has one first refraction coefficient, and first refraction coefficient is between 1.3 to 1.6; And

One Inorganic Dielectric Material, blending is in described resin material, described Inorganic Dielectric Material blending in the percentage by weight of described resin material greater than 10%, described Inorganic Dielectric Material has one second refraction coefficient, described second refraction coefficient is between 1.7 to 2.3, described first refraction coefficient is less than described second refraction coefficient, and the difference of described first refraction coefficient and described second refraction coefficient is at least greater than 0.2; And

One light-emitting diode chip for backlight unit is positioned on the described bottom and is positioned at described accommodation space.

14. package structure for LED as claimed in claim 13 is characterized in that, described resin material is a silica gel.

15. package structure for LED as claimed in claim 13 is characterized in that, described resin material is poly-terephthalate p-phenylenediamine (PPD), polymethyl methacrylate, epoxy resin, polyethylene terephthalate or polycarbonate resin.

16. package structure for LED as claimed in claim 13 is characterized in that, described Inorganic Dielectric Material is a boron nitride.

17. package structure for LED as claimed in claim 13 is characterized in that, described Inorganic Dielectric Material is selected from the group that aluminium oxide, aluminium nitride, beryllium oxide, barium sulfate, magnesium oxide, zirconia and combination thereof are formed.

18. package structure for LED as claimed in claim 13 is characterized in that, described Inorganic Dielectric Material blending in the percentage by weight of described resin material greater than 10%.

19. package structure for LED as claimed in claim 13 is characterized in that, described bottom or described sidewall for the reflectivity of visible light or ultraviolet light more than or equal to 85%.

20. package structure for LED as claimed in claim 13 is characterized in that, described bottom is a circuit board, and described sidewall then comprises described resin material and the described Inorganic Dielectric Material of blending in described resin material.

21. package structure for LED as claimed in claim 13 is characterized in that, described light-emitting diode chip for backlight unit is visible light emitting diode chip or ultraviolet light-emitting diodes chip.

22. package structure for LED as claimed in claim 21 is characterized in that, the ultraviolet wavelength scope of described ultraviolet light-emitting diodes chip is between 300 nanometer to 430 nanometers.

23. package structure for LED as claimed in claim 13 is characterized in that, the dimensions of described load bearing unit is less than or equal to 1.0 millimeters of 1.6 millimeters * of 2.6 millimeters *.

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