CN101319365A - Production method of silicon crystal - Google Patents
Production method of silicon crystal Download PDFInfo
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- CN101319365A CN101319365A CNA200810063556XA CN200810063556A CN101319365A CN 101319365 A CN101319365 A CN 101319365A CN A200810063556X A CNA200810063556X A CN A200810063556XA CN 200810063556 A CN200810063556 A CN 200810063556A CN 101319365 A CN101319365 A CN 101319365A
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- Prior art keywords
- silicon
- additive
- crucible
- crystal
- silicon crystal
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 121
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 121
- 239000010703 silicon Substances 0.000 title claims abstract description 121
- 239000013078 crystal Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000000654 additive Substances 0.000 claims abstract description 55
- 230000000996 additive effect Effects 0.000 claims abstract description 55
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 7
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 7
- 229910052745 lead Inorganic materials 0.000 claims abstract description 7
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 229910052700 potassium Inorganic materials 0.000 claims abstract description 7
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 7
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 32
- 239000010439 graphite Substances 0.000 claims description 30
- 239000000203 mixture Substances 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 12
- 239000011707 mineral Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229910016036 BaF 2 Inorganic materials 0.000 claims description 9
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 150000001722 carbon compounds Chemical class 0.000 claims description 2
- -1 BaCl 2 Inorganic materials 0.000 claims 2
- 238000000034 method Methods 0.000 abstract description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 24
- 239000010453 quartz Substances 0.000 abstract description 20
- 229910052788 barium Inorganic materials 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 150000002484 inorganic compounds Chemical class 0.000 abstract 1
- 229910010272 inorganic material Inorganic materials 0.000 abstract 1
- 241000209456 Plumbago Species 0.000 description 22
- 235000012239 silicon dioxide Nutrition 0.000 description 21
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 16
- 229910001632 barium fluoride Inorganic materials 0.000 description 16
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 5
- 229910001634 calcium fluoride Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- 239000003610 charcoal Substances 0.000 description 4
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910016569 AlF 3 Inorganic materials 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 2
- 101100496858 Mus musculus Colec12 gene Proteins 0.000 description 2
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 2
- 229910001626 barium chloride Inorganic materials 0.000 description 2
- 229940045511 barium chloride Drugs 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229960001866 silicon dioxide Drugs 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 210000001787 dendrite Anatomy 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000005501 phase interface Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a production method of silicon crystals, which comprises the steps of placing silicon melt into an outer layer crucible, preparing the silicon crystals through seed crystal induction, wherein the silicon melt contains an additive, and the additive is one or more of F, Cl or O element and inorganic compounds consisting of one or more of metal elements of Na, K, Li, Zn, Pb, Ca, Al, Mg, Sr and Ba. The method of the invention omits a quartz crucible in the Czochralski method through the use of the additive, thereby not only increasing the productivity of the silicon crystal, but also reducing the oxygen content in the silicon crystal and improving the quality of the silicon crystal.
Description
Technical field
The present invention relates to a kind of method for preparing silicon crystal, relate in particular to the improvement that a kind of mound krousky legal system is equipped with silicon crystal.
Background technology
Mound krousky method (the Czochralski method is called for short the CZ method) is a kind of widely used method of silicon crystal growth.Silicon crystal is semicon industry and the solar energy photovoltaic utilization industry material of normal use.
Mound krousky method is normally placed inner crucible (quartz crucible) outside in the crucible (generally being plumbago crucible), and melted silicon induces down by seed crystal to grow columned silicon crystal in inner crucible (quartz crucible).
A kind of crucible that is used for growing silicon crystal is for example disclosed in the Chinese invention patent 200410061587.3, and a kind of method of utilizing this crucible to come growing silicon crystal by Czochralski technique, the inner crucible that wherein is used for the Czochralski technique growing silicon crystal also adopts quartz crucible.
The preparation method of a kind of monocrystalline silicon draw machines with thermal field charcoal/charcoal crucible disclosed in Chinese invention patent application 200610043186.4, when also mentioning the silicon crystal growth in this method, be to place quartz crucible in the crucible (charcoal/charcoal crucible) outside, silicon melt places quartz crucible to carry out crystalline processing.
The main component of quartz crucible is a silicon-dioxide, and at high temperature the partial oxygen atom can dissociate out from quartz, enters into silicon crystal.Therefore, have higher oxygen concn by quartz crucible as the crystal that the CZ method of container grows.For the silicon crystal that needs utmost point low oxygen content under some use occasion.For example, in order to improve the life-span as boron-doping photovoltaic silicon materials, reduce the negative impact that photo attenuation is brought, the oxygen level in the silicon crystal need minimize.In this case, avoid using quartz crucible to solve the high problem of CZ method silicon crystal oxygen level from root.But do not use quartz crucible directly to use plumbago crucible then can cause other problem.Topmost difficulty is that volumetric expansion caused damage to plumbago crucible when silicon solidified.When silicon cooled off with graphite, the difference of both thermal expansivity also can cause damage to graphite.
Summary of the invention
The invention provides a kind of productivity that increases silicon crystal, reduce the oxygen level of silicon crystal, improve the silicon crystal production method of silicon crystal quality.
The present invention introduces a kind of additive that is used for growing silicon crystal, can avoid directly using the problem that plumbago crucible brings causes because of thermal expansion, and what overcome also that existing mound krousky legal system is equipped with silicon crystal contains the oxygen problem.
A kind of production method of silicon crystal comprises melted silicon is inserted in the outer crucible that induce the preparation silicon crystal by seed crystal, described melted silicon contains additive.
Described additive must not react with silicon and used crucible material (for example graphite), and its liquation (molten state) does not dissolve each other with melted silicon, and boiling point is greater than the fusing point (about 1420 ℃) of silicon.
Additive is satisfying under the prerequisite of above-mentioned performance requriements, can select the mineral compound of one or more compositions among a kind of and metallic element Na, K, Li, Zn, Pb, Ca, Sr, Al, Mg or the Ba in C, N, O, S, F or the Cl element for use, this mineral compound can be that one or more mix use.It can be arbitrarily than mixing that multiple mineral compound mixes when using.
In addition, the liquation that also will consider additive of selecting for use of additive is lowered the temperature, is solidified and cool to room temperature from hot environment in crucible, can not damage this crucible because of expanding with heat and contract with cold.The mineral compound of one or more compositions among a kind of and metallic element Na, K, Li, Zn, Pb, Ca, Al, Mg, Sr or the Ba in preferred F, Cl or the O element, this mineral compound can be that one or more mix use.
Specifically can adopt NaF, KF, LiF, ZnF
2, PbF
2, CaF
2, BaF
2, SrE
2, MgF
2, AlF
3, NaCl, KCl, LiCl, ZnCl
2, PbCl
2, CaCl
2, BaCl
2, SrCl
2, MgCl
2, AlCl
3, Na
2O, K
2O, Li
2O, ZnO, PbO, BaO, CaO, SrO, MgO or Al
2O
3In at least a.
Further consider factors such as cost, environmental-protecting performance, most preferably barium fluoride (BaF
2), bariumchloride (BaCl
2), Calcium Fluoride (Fluorspan) (CaF
2) or calcium chloride (CaCl
2) in one or more.
The inventive method has been saved the use of inner crucible (quartz crucible) in the prior art by the use of additive.
Outer crucible of the present invention is general-purpose equipment in the krousky method of existing mound, and also some technical literature is called supporter etc., all is to be coated on the inner crucible outside, plays the effect of support, heat conduction, and outer crucible is generally made by the resistant to elevated temperatures non-oxygen material of analysing.
High temperature resistantly promptly meet the requirement of heating among the silicon crystal preparation technology, the non-oxygen of analysing does not promptly have Sauerstoffatom and dissociates out from crucible in producing the silicon crystal process.
Described outer crucible can be the crucible that graphite in the krousky method of existing mound or carbon/carbon compound material are made, the crucible that also can use other high temperature resistant non-materials of analysing oxygen to make.
Because additive only plays a protective role, do not participate in reaction, so the consumption of additive does not have strict restriction.
According to above thinking, the present invention also provides a kind of additive that mound krousky legal system is equipped with silicon crystal with lower oxygen content that is used for, described additive, must not react with silicon and used outer crucible material (for example graphite), its liquation (molten state) does not dissolve each other with melted silicon, and its boiling point is higher than the fusing point (about 1420 ℃) of silicon.The liquation of additive is lowered the temperature, is solidified and cool to room temperature from hot environment in crucible, can not damage this crucible because of expanding with heat and contract with cold.
Additive is satisfying under the prerequisite of above-mentioned performance requriements, can select the mineral compound of one or more compositions among a kind of and metallic element Na, K, Li, Zn, Pb, Ca, Al, Mg, Sr or the Ba in C, N, O, S, F or the Cl element for use, this mineral compound can be that one or more mix use.It can be arbitrarily than mixing that multiple mineral compound mixes when using.
The mineral compound of at least a composition among at least a and metallic element Na, K, Li, Zn, Pb, Ca, Al, Mg, Sr or the Ba in preferred F, Cl or the O element, this mineral compound can be that one or more mix use.
As further preferred, can adopt NaF, KF, LiF, ZnF
2, PbF
2, CaF
2, BaF
2, SrF
2, MgF
2, AlF
3, NaCl, KCl, LiCl, ZnCl
2, PbCl
2, CaCl
2, BaCl
2, SrCl
2, MgCl
2, AlCl
3, Na
2O, K
2O, Li
2O, ZnO, PbO, BaO, CaO, SrO, MgO or Al
2O
3In at least a.
Barium fluoride (BaF most preferably
2), bariumchloride (BaCl
2), Calcium Fluoride (Fluorspan) (CaF
2) or calcium chloride (CaCl
2) in one or more.
The present invention also provides described additive to be equipped with purposes in the silicon crystal with lower oxygen content in mound krousky legal system.
Show that after deliberation additive of the present invention outside in the crucible, can not mix because of liquation and causes the silicon crystal growth because of difficulty after silicon melts.
Volumetric expansion causes damage to plumbago crucible when silicon solidifies, additive select for use and the mechanism of action has following three kinds of situations:
(1) selects the additive of liquation density for use greater than melted silicon, the additive liquation is because density is deposited in crucible bottom and separates with melted silicon greater than melted silicon, for this situation, also require the fusing point of the fusing point of additive and silicon close or lower, because the additive liquation is sunken to crucible bottom, therefore do not influence the growth of silicon crystal.
(2) select the additive of liquation density for use less than melted silicon, additive liquation density very little and float on melted silicon above, for this situation, also require the fusing point of additive must be lower than the fusing point of silicon more than 10 ℃.Do not containing the final stage of the silicon crystal CZ method process of growth of additive in the past, melted silicon in crucible more after a little while, because heat loss through radiation, when being difficult in melted silicon usually and being kept above melting temperature, the temperature of liquid level central authorities (freezing interface) is still near the melting temperature of silicon.For fear of surplus silicon (not becoming the molten silicon of silicon crystal in the crucible as yet) crystallization suddenly in crucible, the crystal pulling process is (when for example dendrite appears in fusion silicon liquid level) in due course, must force termination, and stays the pot bottom material of more silicon.When adding density in the melted silicon less than the additive of melted silicon, float on the above additive liquation of melted silicon liquid level and just played the effect that is incubated, the final stage of crystal pulling process of growth can not interrupted because of the liquid level crystallization, and this makes that more silicon crystal is grown and comes out.Remaining silicon material amount reaches minimum in the last pot bottom material, and this makes that the influence to plumbago crucible had also reduced greatly when silicon condensed.It should be noted that in addition since the fusing point of silicon than the fusing point height of additive, by will at first growing silicon crystal by mound krousky method, rather than the crystallisate of additive with silicon single-crystal seed crystal seeding.
(3) the additive liquation is bonded at crucible surface because form the vitreous state viscous fluid and separates with melted silicon, for this situation, the viscosity that requires additive is greater than the viscosity of melted silicon more than one times, because the additive liquation at high temperature forms the vitreous state viscous fluid and is bonded at crucible surface and separates with melted silicon, the additive liquation can be considered as the part of crucible and not influence the growth of silicon crystal.After lifting out most of silicon crystal, additive and a spot of surplus silicon are at the crucible internal cooling and condense the formation pot bottom material.
Additive in the inventive method solidifies cooling in plumbago crucible can't make the plumbago crucible cracking.In the presence of additive, the influence of solidifying and cooling off plumbago crucible of a spot of surplus silicon significantly reduces.In addition, the additive that is on the plumbago crucible inwall can form protective layer, and the chance of silicon and graphite reaction has been significantly reduced, and makes plumbago crucible repeatedly to reuse, and has reduced production cost.
During use additive and silicon are put together fusing, perhaps additive and silicon melt with any order, are placed in the crucible but must mix after the fusing.
The crucible that the inventive method is used is an integral body, rather than is made up of three lobes or many lobes, and its inside does not need to serve as a contrast a quartz crucible yet.Owing to do not need to use quartz crucible,, can also avoid the plumbago crucible cracking simultaneously so oxygen level is very low in the silicon crystal that generates.The boron-doping silicon crystal with lower oxygen content that the inventive method is produced is made into solar cell, and the negative impact that photo attenuation is brought minimizes, and improves the life-span of photovoltaic product.
The inventive method is removed the quartz crucible in the krousky method of mound from by the use of additive, not only can increase the productivity of silicon crystal, more can reduce the oxygen level in the silicon crystal, improves the quality of silicon crystal.
Description of drawings
Fig. 1 is equipped with silicon crystal prior art reaction unit synoptic diagram for mound krousky legal system;
Fig. 2 utilizes the inventive method to prepare the reaction unit synoptic diagram of silicon crystal;
Embodiment
Embodiment 1
Referring to Fig. 1, Fig. 1 is the typical longitudinal section of a CZ method crystal lifting furnace.The silicon raw material that is generally used for growing silicon crystal be placed on inner crucible be in the quartz crucible 2 by well heater 3 heating, under the protection of lagging material 8, be fused into melted silicon 4.It is in the plumbago crucible 1 that quartz crucible 2 is placed on outer crucible.And plumbago crucible be placed on can the crucible shaft 7 of lifting on.In the CZ method, the interface of crystal growth is in the centre of melted silicon 4 free surfaces.By suitably designing heating power, and the given suitable crucible shaft 7 and the rotating speed of seed crystal 5, under seed crystal 5 the lifting, induce melted silicon 4 to grow columned crystal 6 by haulage gear.
In the crystal 6 process of growth, the main component of quartz crucible 2 is a silicon-dioxide, and at high temperature the partial oxygen atom can dissociate out from quartz, enters into crystal 6.Therefore, have higher oxygen concn by quartz crucible 2 as the crystal 6 that the CZ method of container grows.
Referring to Fig. 2, with barium fluoride (BaF
2) as additive.Before the silicon crystal growth, additive barium fluoride and silicon raw material can be mixed, being placed directly into outer crucible is in the plumbago crucible 1.After well heater 3 intensifications, because the fusing point of barium fluoride is lower than silicon fusing point, so barium fluoride at first begins fusing when temperature is heated to 1270～1370 ℃ of left and right sides.When the temperature of well heater continued to be elevated to 1420 ℃ of left and right sides, the silicon raw material began fusing.As shown in Figure 2, fusing back melted silicon 4 is different with the density of barium fluoride liquation 9, and melted silicon 4 will be in the top of barium fluoride liquation 9.
Along with the rotation of crucible shaft 7 and seed crystal 5, seed crystal 5 lifts by haulage gear, induces melted silicon 4 to grow columned crystal 6.
After crystal begins to lift, by regulating suitable temperature, can be so that the solid-liquid phase interface of crystal growth be near the fusing point of silicon.Therefore, barium fluoride can not solidify or attached to the silicon crystal surface.The molten silicon of major part is formed crystal and lift out after the liquid level, barium fluoride will all be stayed in the plumbago crucible and cool off with a spot of surplus silicon.
Barium fluoride solidifies cooling in plumbago crucible can't make the plumbago crucible cracking.In the presence of barium fluoride, the influence of solidifying and cooling off plumbago crucible of a spot of surplus silicon significantly reduces.In the above-mentioned in addition production process,, the chance of silicon and graphite reaction has been significantly reduced, make plumbago crucible repeatedly to reuse, reduced production cost because the barium fluoride that is on the plumbago crucible inwall can form protective layer.
With Calcium Fluoride (Fluorspan) (CaF
2) and barium fluoride (BaF
2) mixture (mass ratio 1: 1) is as additive.Before the silicon crystal growth, additive agent mixture and silicon raw material are mixed, be placed directly in the plumbago crucible.After the well heater intensification, because Calcium Fluoride (Fluorspan) (CaF
2) and barium fluoride (BaF
2) fusing point lower than silicon fusing point, so Calcium Fluoride (Fluorspan) (CaF
2) and barium fluoride (BaF
2) when temperature is heated to 1270～1370 ℃ of left and right sides, at first begin to melt.When the temperature of well heater continued to be elevated to 1420 ℃ of left and right sides, the silicon raw material began fusing.Additive melting ratio melted silicon density is big, and melted silicon will be in the top of additive liquation, and along with the rotation of crucible shaft and seed crystal, seed crystal lifts by haulage gear, induces melted silicon to grow columned crystal.
Claims (5)
1, a kind of production method of silicon crystal, comprise melted silicon is inserted in the outer crucible, induce the preparation silicon crystal by seed crystal, it is characterized in that: described melted silicon contains additive, and described additive is one or more in the mineral compound of one or more compositions among F, Cl or O element and metallic element Na, K, Li, Zn, Pb, Ca, Al, Mg, Sr or the Ba.
2, production method as claimed in claim 1 is characterized in that: described additive is BaF
2, BaCl
2, CaF
2Or CaCl
2In one or more.
3, production method as claimed in claim 1 is characterized in that: described outer crucible is made by graphite or carbon/carbon compound material.
4, a kind ofly be used for the additive that mound krousky legal system is equipped with silicon crystal with lower oxygen content, described additive is one or more in the mineral compound of one or more compositions among F, Cl or O element and metallic element Na, K, Li, Zn, Pb, Ca, Al, Mg, Sr or the Ba.
5, additive as claimed in claim 4 is characterized in that: described additive is BaF
2, BaCl
2, CaF
2Or CaCl
2In one or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810063556XA CN101319365A (en) | 2008-06-19 | 2008-06-19 | Production method of silicon crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810063556XA CN101319365A (en) | 2008-06-19 | 2008-06-19 | Production method of silicon crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101319365A true CN101319365A (en) | 2008-12-10 |
Family
ID=40179620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200810063556XA Pending CN101319365A (en) | 2008-06-19 | 2008-06-19 | Production method of silicon crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101319365A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3025222A1 (en) * | 2014-09-01 | 2016-03-04 | Guy Baret | PROCESS FOR PRODUCING A SILICON SUBRAT |
| CN114890428A (en) * | 2022-04-29 | 2022-08-12 | 成都理工大学 | A kind of ternary slag-forming agent used for refining outside industrial silicon furnace and its impurity removal method |
| CN116026487A (en) * | 2023-03-31 | 2023-04-28 | 内蒙古晶环电子材料有限公司 | Liquid level temperature measuring method, liquid level temperature measuring device, computer equipment and storage medium |
-
2008
- 2008-06-19 CN CNA200810063556XA patent/CN101319365A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3025222A1 (en) * | 2014-09-01 | 2016-03-04 | Guy Baret | PROCESS FOR PRODUCING A SILICON SUBRAT |
| WO2016034501A1 (en) * | 2014-09-01 | 2016-03-10 | Guy Baret | Method for producing a silicon substrate |
| CN114890428A (en) * | 2022-04-29 | 2022-08-12 | 成都理工大学 | A kind of ternary slag-forming agent used for refining outside industrial silicon furnace and its impurity removal method |
| CN116026487A (en) * | 2023-03-31 | 2023-04-28 | 内蒙古晶环电子材料有限公司 | Liquid level temperature measuring method, liquid level temperature measuring device, computer equipment and storage medium |
| CN116026487B (en) * | 2023-03-31 | 2023-08-08 | 内蒙古晶环电子材料有限公司 | Liquid level temperature measuring method, liquid level temperature measuring device, computer equipment and storage medium |
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Application publication date: 20081210 |