CN101311343B - Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot - Google Patents
Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot Download PDFInfo
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- CN101311343B CN101311343B CN2008100339087A CN200810033908A CN101311343B CN 101311343 B CN101311343 B CN 101311343B CN 2008100339087 A CN2008100339087 A CN 2008100339087A CN 200810033908 A CN200810033908 A CN 200810033908A CN 101311343 B CN101311343 B CN 101311343B
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- water
- warm case
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 37
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000005485 electric heating Methods 0.000 claims description 14
- 239000004568 cement Substances 0.000 claims description 9
- 229920002457 flexible plastic Polymers 0.000 claims description 8
- 238000009434 installation Methods 0.000 claims description 8
- 230000008520 organization Effects 0.000 claims description 7
- 238000001816 cooling Methods 0.000 abstract description 5
- 238000002425 crystallisation Methods 0.000 abstract description 5
- 230000008025 crystallization Effects 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009347 mechanical transmission Effects 0.000 description 4
- 239000000155 melt Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to an ingot vacuum furnace which is suitable for making polysilicon with large size and high purity. An insulating cover is designed to be a lifting type. A main body of a lifting mechanism consisting of a servo linear motion mechanism and a continuous-motion bar is arranged on a furnace cover, wherein, one end of the continuous-motion bar is fixedly arranged on the top of the insulating cover. An electrode of a power supply part is a water cooling type. A transmission cable in the furnace is a flexibility water cooling type. As a material platform and a crucible are free from the working interference of the lifting mechanism, a fixed type of the crystallization quality is beneficial to being ensured. The volume size in the crucible is only related to the bearing ability of the material platform; therefore, the crucible with large capacity is easy to be arranged. Furthermore, the water cooling type of the upper and lower electrodes and the water cooling type of the flexibility cable are adopted to ensure the reliable service life, thus ensuring the free lifting of the insulating cover. The ingot vacuum furnace has the advantages of scientific and reasonable structure, reliable working, long service life, stable product quality and high purity, which is suitable for producing polysilicon with large size and high purity and has strong practicability.
Description
Technical field
The present invention relates to a kind of metal melting equipment, particularly a kind of vacuum oven that is suitable for making large-diameter high-purity polysilicon ingot.
Background technology
Polysilicon chip is a kind of base mateiral of making silicon solar cell, it is very high with the purity requirement of the polycrystalline silicon ingot casting of polysilicon chip to be used to make silicon solar cell, the polysilicon solution of high temperature melt presents three-decker usually in the vacuum oven crucible, the bottom is the heavier impurity layer of proportion, top be proportion lighter contain slag blanket, have only the middle layer to be only the purer available layers of quality.For cannon pot, because volume own is little, it is more approaching that bottom impurity layer and top contain slag blanket, and not only the middle available layers of Huo Deing is often very thin, and purity also cannot say for sure to demonstrate,prove, so angle from then on, requiring the volume of crucible is good more greatly, more deeply; In addition, from the physicals angle analysis, the vacuum oven that polycrystalline silicon ingot casting is produced in melting should possess that the polysilicon solution that can make in the crucible is quite high at environmental stability, in the environment that do not have at all shake or vibration gradually by upwards slowly cooling successively gradually of bottom, begin upwards gradually crystallographic orientation successively from the bottom, to obtain the polycrystalline silicon ingot casting that lattice arrangement is neat, guarantee the physicals unanimity.But it is at present general, comprise and be provided with body of heater, stay-warm case, crucible, the material platform, hoisting appliance, the polycrystal silicon ingot crystal growing furnace of electric heating device and power supply part thereof all can not reach above-mentioned requirements basically: at first, on structure formation, even if came out in recent years considering the crystallographic orientation factor and design have slowly descend a polycrystal silicon ingot crystal growing furnace of function of crucible, hoisting appliance is arranged on material platform below, the crucible of interior dress polycrystalline silicon raw material is arranged on the material platform, the liquid polysilicon solution that melts in the crucible has possessed from the bottom and begins to lower the temperature gradually, the condition of crystallographic orientation, but keep away unavoidable vibration and shake during owing to mechanical transmission mechanism work, thereby keep away unavoidably the interference during the polysilicon solution crystallization in the crucible, thereby influence lattice arrangement, except that the crystalline amount be cannot say for sure to demonstrate,prove, the stability of quality product was also poor; Secondly, because the gross weight of crucible and built-in polysilicon solution or raw material directly acts on the mechanical transmission mechanism as the load of hoisting appliance, and the supporting capacity of mechanical transmission mechanism is limited, and this has limited the volumetric quantity of crucible to a certain extent.So existing material platform Liftable type polycrystal silicon ingot crystal growing furnace can not satisfy the requirement of casting large size, high-purity polysilicon ingot.
Summary of the invention
The objective of the invention is to provide a kind of vacuum oven that is suitable for making large-diameter high-purity polysilicon ingot, with the polycrystal silicon ingot crystal growing furnace work of thoroughly reversing prior art the time be subjected to easily mechanical lifting gear interference, influence the unreasonable structure formation of crystalline quality and overcome the drawback that is not suitable for being used to cast large size, high-purity polysilicon ingot.
The vacuum oven main body that is suitable for making large-diameter high-purity polysilicon ingot of the present invention comprises and is provided with body of heater, material platform, crucible, stay-warm case, hoisting appliance and power supply part and electric heating device, crucible is arranged on the material platform, stay-warm case covers the crucible periphery that is arranged on material platform top, the electric heating device fixed installation is arranged on the stay-warm case top, its main body is stretched the gap that places between stay-warm case inwall and the crucible periphery, comprise in the power supply part and be provided with electrical control gear, electrode and supply cable, be characterised in that: stay-warm case is set to Liftable type; Hoisting appliance is mounted on the bell, and the trace that is fixedly installed on the stay-warm case top by an end links to each other with the stay-warm case traction; Power supply part is with the corresponding setting with electric heating device of form in groups, at least be provided with two groups, by the unified control of electrical control gear, include water-cooled electrode and water-cooled flexible cable in every group, described electrical control gear includes stay-warm case lifting control mechanism and electrically heated controlling organization, the nearly top ends of described water-cooled electrode is provided with the current inlet and outlet connectors, inside is provided with water stream channel, constitute by the water-cooled top electrode and the corresponding water-cooled lower electrode that is arranged on the stay-warm case top that are arranged on the bell, described water-cooled flexible cable is arranged between water-cooled top electrode and the water-cooled lower electrode, constitute by inner flexible cable and outside flexible plastic cement pipe and water flow inside passage, the internal diameter of plastic cement pipe is greater than the diameter of flexible cable, and middle water stream channel is made of the internal clearance between flexible plastic cement pipe and flexible cable; Described hoisting appliance is made up of servo straight-line motion mechanism and trace that servomotor, screw mandrel, slide block and guide rail constitute, be mounted on the bell with the form of equidistantly arranging with circle, at least be provided with three groups that specification and technical indicator conform to fully, by the unified control of the stay-warm case lifting control mechanism in the electrical control gear, synchronization action; Described trace body engages is arranged on the servo straight-line motion mechanism, and its bottom is fixedly installed on the stay-warm case top; The upper/lower electrode mutual water route of water stream channel inner and water-cooled flexible cable inside communicates under the described water-cooled; The fixed installation of described water-cooled top electrode is arranged on the bell, is electrically connected by feeder cable and electrically heated controlling organization, and described water-cooled lower electrode fixedly mounts and is arranged on the top of stay-warm case, is electrically connected with the terminals of electric heating device; The basic configuration of described body of heater, material platform, crucible and stay-warm case can be provided with as required and be square or circle.
During work, crucible is fixedly installed on the material platform, electric heating device covers around the crucible that is arranged on the material platform in company with stay-warm case, water coolant is entered by the current inlet and outlet connectors on the water-cooled top electrode, current inlet and outlet connectors on the water-cooled lower electrode on another group power supply part through flow out, enter adjacency behind the water-cooled flexible cable by the current inlet and outlet connectors on the water-cooled lower electrode, through flowing out by the current inlet and outlet connectors on the water-cooled top electrode behind the water-cooled flexible cable, to guarantee the useful working life of water-cooled upper/lower electrode and water-cooled flexible cable; When after the polycrystalline silicon raw material in the crucible melts fully, beginning crystallization, by the servomotor work in the stay-warm case lifting control mechanism control hoisting appliance, carry out and drive trace traction stay-warm case by the action that moves in the predetermined requirement slowly, the polysilicon solution that crucible bottom is at first broken away from high-temperature zone, the crucible begins slowly to lower the temperature from the bottom, cools off successively, realizes crystallographic orientation.
Be suitable for making the vacuum oven of large-diameter high-purity polysilicon ingot based on the present invention of above-mentioned design, because material platform and crucible are set to fixed, stay-warm case is set to controlled lift, any shake that produces when mechanical transmission component is worked in the hoisting appliance or vibration all can not bring the crystallization of polysilicon solution in the crucible to be disturbed and influence, and for hoisting appliance, the permanent load that it bears only is the stay-warm case of interior charged heater element, so size of crucible internal capacity, the gross weight of crucible and built-in polysilicon solution or raw material is only relevant with the supporting capacity of material platform, therefore is convenient to be provided with in vacuum oven jumbo crucible; And because crucible is in state static, no external interference, help guaranteeing crystalline quality, be convenient to produce the large-diameter high-purity polysilicon ingot of quality unification and good stability; Owing to be provided with water-cooled upper/lower electrode and water-cooled flexible cable in the power supply part, help guaranteeing the working life of power supply part and the lifting and translocating of stay-warm case.In sum, of the present inventionly be suitable for making the vacuum oven scientific structure of large-diameter high-purity polysilicon ingot and rationally, reliable operation and life-span are long, constant product quality and purity height, the polycrystal silicon ingot crystal growing furnace that can effectively overcome prior art can not the production large size, the drawback of high-purity polysilicon ingot, has significant technical advance, very strong practicality and valuable market application foreground.
Description of drawings
Fig. 1 is the overall structure synoptic diagram of the embodiment of the invention;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is that the electrically heated power supply component is provided with synoptic diagram in the embodiment of the invention;
Fig. 4 is the structural representation of water-cooled electrode and water-cooled cable in the embodiment of the invention;
Fig. 5 is that hoisting appliance is provided with synoptic diagram in the embodiment of the invention;
Fig. 6 be in the embodiment of the invention cooling-water flowing to synoptic diagram.
Among the figure:
1. body of heater 2. material platforms 3. crucibles 4. stay-warm cases 5. hoisting appliances
6. power supply part 7. electric heating devices 8. gaps 9. electrical control gears
9-1. stay-warm case lifting control mechanism 9-2. electrically heated controlling organization 10. electrodes
10-1. water-cooled top electrode 10-2. water-cooled lower electrode 11. feeder cables
11-1. water-cooled flexible cable 12. bells 13. traces 14. nearly top ends
15. current inlet and outlet connectors 16. water stream channels 17. flexible cable 18. flexible plastic cement pipes
19. 22. tops, water stream channel 20. servo straight-line motion mechanism 21. bottoms
Embodiment
Below in conjunction with accompanying drawing and exemplary embodiments the present invention's invention is described further.
At Fig. 1, Fig. 2, Fig. 3, among Fig. 4 and Fig. 5, the vacuum oven main body that is suitable for making large-diameter high-purity polysilicon ingot of the present invention includes body of heater 1, material platform 2, crucible 3, stay-warm case 4, hoisting appliance 5 and power supply part 6 and electric heating device 7, crucible 3 is arranged on the material platform 2, stay-warm case 4 covers the periphery that is arranged on material platform 2 top crucibles 3, electric heating device 7 fixed installations are arranged on stay-warm case 4 tops, its main body is stretched in the gap 8 of putting between stay-warm case 4 inwalls and crucible 3 peripheries, comprise in the power supply part 6 and be provided with electrical control gear 9, electrode 10 and feeder cable 11 are characterised in that: stay-warm case 4 is set to Liftable type; Hoisting appliance 5 is mounted on the bell 12, and the trace 13 that is fixedly installed on stay-warm case 4 tops by an end links to each other with stay-warm case 4 tractions; Described electrical control gear 9 is made up of stay-warm case lifting control mechanism 9-1 and electrically heated controlling organization 9-2; Described electrode 10 is made of the water-cooled lower electrode 10-2 that is arranged on the water-cooled top electrode 10-1 on the bell 12 and be arranged on stay-warm case 4 tops, the side of nearly top ends 14 is provided with current inlet and outlet connectors 15, inside is provided with water stream channel 16, described feeder cable 11 is filled the post of by water-cooled flexible cable 11-1, be arranged between water-cooled top electrode 10-1 and the water-cooled lower electrode 10-2, by inner flexible cable 17, outside flexible plastic cement pipe 18 and middle water stream channel 19 constitute, the internal diameter of flexible plastic cement pipe 18 is greater than the diameter of flexible cable 17, and middle water stream channel 19 is made of the internal clearance of 17 of flexible plastic cement pipe 18 and flexible cable; Described hoisting appliance 5 is filled the post of by servo straight-line motion mechanism 20 and trace 13 that servomotor, screw mandrel, slide block and guide rail constitute, be mounted on the bell 12 with the form of equidistantly arranging with circle, be provided with three groups that specification and technical indicator conform to fully, by the unified control of the stay-warm case lifting control mechanism 9-1 in the electrical control gear 9, synchronization action; Described trace 13 body engages are arranged on the servo straight-line motion mechanism 20, and its bottom 21 is fixedly installed on the top 22 of stay-warm case 4; The middle water stream channel 19 mutual water routes of the water stream channel 16 of upper/lower electrode 10-1 and 10-2 inside and water-cooled flexible cable 11-1 communicate under the described water-cooled; Described water-cooled top electrode 10-1 fixed installation is arranged on the bell 12, be electrically connected with electrically heated controlling organization 9-2 by cable 11, described water-cooled lower electrode 10-2 fixed installation is arranged on the top 22 of stay-warm case 4, be electrically connected with the terminals of electric heating device 7, described water-cooled flexible cable 11-1 is arranged between top electrode 10-1 and the lower electrode 10-2.
In Fig. 1 and Fig. 6, during work, crucible 3 is fixedly installed on the material platform 2, electric heating device 7 covers around the crucible 3 that is arranged on the material platform 2 in company with stay-warm case 4, water coolant is entered by the current inlet and outlet connectors 15 of water-cooled top electrode 10-1, current inlet and outlet connectors 15 on the water-cooled lower electrode 10-2 on another group power supply part 6 through flowed out, entered adjacency behind the water-cooled flexible cable 11-1 by the current inlet and outlet connectors on the water-cooled lower electrode 10-2 15 is through being flowed out by the current inlet and outlet connectors on the water-cooled top electrode 10-1 15 behind the water-cooled flexible cable 11-1.When after the polycrystalline silicon raw material in the crucible 3 melts fully, beginning crystallization, by the servomotor work in the stay-warm case lifting control mechanism 9-1 control hoisting appliance 5, carry out and drive trace 13 traction stay-warm cases 4 by the action that moves in the predetermined requirement slowly, the polysilicon solution that crucible 3 bottoms are at first broken away from high-temperature zone, the crucible 3 begins slowly to lower the temperature from the bottom, cools off successively, realizes crystallographic orientation.
Claims (6)
1. vacuum oven that is suitable for making large-diameter high-purity polysilicon ingot, include body of heater (1), material platform (2), crucible (3), stay-warm case (4), hoisting appliance (5) and power supply part (6) and electric heating device (7), crucible (3) is arranged on the material platform (2), stay-warm case (4) covers the periphery that is arranged on material platform (2) top crucible (3), electric heating device (7) fixed installation is arranged on stay-warm case (4) top, its main body is stretched in the gap (8) of putting between stay-warm case (4) inwall and crucible (3) periphery, comprise in the power supply part (6) and be provided with electrical control gear (9), electrode (10) and feeder cable (11) is characterized in that:
A. stay-warm case (4) is set to Liftable type;
B. described hoisting appliance (5) is filled the post of by servo straight-line motion mechanism (20) and trace (13) that servomotor, screw mandrel, slide block and guide rail constitute, at least be provided with three groups, be mounted on the bell (12) with the form of equidistantly arranging with circle, the trace (13) that is fixedly installed on stay-warm case (4) top by an end links to each other with stay-warm case (4) traction;
C. include stay-warm case lifting control mechanism (9-1) and electrically heated controlling organization (9-2) in the described electrical control gear (9);
D. described electrode (10) is provided with current inlet and outlet connectors (15) by nearly top ends (14) and inside is provided with water stream channel (16), is arranged on the water-cooled top electrode (10-1) on the bell (12) and the water-cooled lower electrode (10-2) that is arranged on the top (22) of stay-warm case (4) constitutes;
E. the part that is arranged in the described feeder cable (11) between water-cooled top electrode (10-1) and the water-cooled lower electrode (10-2) is filled the post of by inner flexible cable (17), outside flexible plastic cement pipe (18) with by the water-cooled flexible cable (11-1) that the middle water stream channel (19) that the internal clearance between flexible plastic cement pipe (18) and flexible cable (17) forms constitutes.
2. the vacuum oven that is suitable for making large-diameter high-purity polysilicon ingot according to claim 1, the specification that it is characterized in that at least three group hoisting appliances (5) that described bell (12) upward is provided with conforms to fully with technical indicator, by the unified control of the stay-warm case lifting control mechanism (9-1) in the electrical control gear (9), synchronization action.
3. the vacuum oven that is suitable for making large-diameter high-purity polysilicon ingot according to claim 1, it is characterized in that described trace (13) body engages is arranged on the servo straight-line motion mechanism (20), its bottom (21) are fixedly installed on the top (22) of stay-warm case (4).
4. the vacuum oven that is suitable for making large-diameter high-purity polysilicon ingot according to claim 1 is characterized in that water stream channel (16) and the water stream channel (19) in the water-cooled flexible cable (11-1) that described water-cooled top electrode (10-1) and lower electrode (10-2) are inner communicate in the water route mutually.
5. the vacuum oven that is suitable for making large-diameter high-purity polysilicon ingot according to claim 1, it is characterized in that described water-cooled top electrode (10-1) fixed installation is arranged on the bell (12), is electrically connected by feeder cable (11) and electrically heated controlling organization (9-2).
6. the vacuum oven that is suitable for making large-diameter high-purity polysilicon ingot according to claim 1, it is characterized in that described water-cooled lower electrode (10-2) fixed installation is arranged on the top (22) of stay-warm case (4), be electrically connected with the terminals of electric heating device (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100339087A CN101311343B (en) | 2008-02-26 | 2008-02-26 | Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100339087A CN101311343B (en) | 2008-02-26 | 2008-02-26 | Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot |
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| Publication Number | Publication Date |
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| CN101311343A CN101311343A (en) | 2008-11-26 |
| CN101311343B true CN101311343B (en) | 2010-12-08 |
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| CN2008100339087A Expired - Fee Related CN101311343B (en) | 2008-02-26 | 2008-02-26 | Vacuum furnace suitable for preparing large-diameter high-purity polysilicon ingot |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102140681A (en) * | 2010-02-25 | 2011-08-03 | 晶科能源有限公司 | Improved thermal field and production process of polycrystalline ingot furnace for increasing crystallization rate |
| CN102154699B (en) * | 2011-05-20 | 2013-05-22 | 吴晟 | Method for growing sapphire monocrystal and growth equipment |
| CN102351194B (en) * | 2011-07-01 | 2013-02-20 | 王存惠 | Polysilicon reduction and ingot casting combined production device and production method |
| CN102330148B (en) * | 2011-07-30 | 2014-04-09 | 常州天合光能有限公司 | Polysilicon ingot casting method with low defect and high output and thermal field structure thereof |
| CN103160933B (en) * | 2011-12-18 | 2016-07-06 | 洛阳金诺机械工程有限公司 | To the temperature equalization system of crucible and method thereof during a kind of worked crystal material |
| CN103160918B (en) * | 2013-02-26 | 2016-06-22 | 宏大中源太阳能股份有限公司 | Quasi-monocrystalline silicon prepare stove and preparation method |
| CN106222733A (en) * | 2016-10-12 | 2016-12-14 | 安徽贝意克设备技术有限公司 | A kind of crucible lifting method single-crystal metal growth furnace |
| CN113862771A (en) * | 2021-09-27 | 2021-12-31 | 北京圣通和晶科技有限公司 | Equipment and manufacturing process for research and development and growth of scintillation crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0869102B1 (en) * | 1996-10-14 | 2002-05-22 | Kawasaki Steel Corporation | Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell |
| CN1873062A (en) * | 2006-05-06 | 2006-12-06 | 大连理工大学 | Method for preparing polysilicon in high purity in use for solar cell |
| CN201162063Y (en) * | 2008-02-26 | 2008-12-10 | 上海晨安电炉制造有限公司 | Polysilicon ingot furnace with liftable thermal insulation cover |
-
2008
- 2008-02-26 CN CN2008100339087A patent/CN101311343B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0869102B1 (en) * | 1996-10-14 | 2002-05-22 | Kawasaki Steel Corporation | Process and apparatus for preparing polycrystalline silicon and process for preparing silicon substrate for solar cell |
| CN1873062A (en) * | 2006-05-06 | 2006-12-06 | 大连理工大学 | Method for preparing polysilicon in high purity in use for solar cell |
| CN201162063Y (en) * | 2008-02-26 | 2008-12-10 | 上海晨安电炉制造有限公司 | Polysilicon ingot furnace with liftable thermal insulation cover |
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Owner name: SHANGHAI CHEN HUA ELECTRIC FURNACE CORP LTD. Free format text: FORMER OWNER: SHANGHAI CHEN'AN FUMACE MANUFACTURING CO., LTD. Effective date: 20130221 |
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Effective date of registration: 20130221 Address after: 201804 Shanghai Jiading District Huangdu Industrial Park concentrated Spring Road No. 278 Patentee after: Shanghai Chen Hua Electric Furnace Corp., Ltd. Address before: 201804 Shanghai Jiading District Huangdu Industrial Park concentrated Spring Road No. 278 Patentee before: Shanghai Chen'an Fumace Manufacturing Co., Ltd. |
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