CN101308790A - Method for removing insulating layer on substrate and chemical mechanical polishing process - Google Patents

Abstract

A method for removing an insulating layer on a substrate and a corresponding chemical mechanical polishing process, the method comprising performing a first chemical mechanical polishing process and a subsequent second chemical mechanical polishing process on the insulating layer, wherein the pH value of the slurry used in the first chemical mechanical polishing process and the slurry used in the second chemical mechanical polishing process are equal and greater than 7. A cleaning step is also included between the first and second chemical mechanical polishing processes to remove specific substances that may cause the generation of harmful particles.

Description

Method and chemical mechanical polishing process for removing insulating layer on substrate

technical field

The present invention relates to a semiconductor device process, and more particularly to a method for removing an insulating layer on a substrate, and a corresponding chemical mechanical polishing process.

Background technique

With the continuous miniaturization of semiconductor element wire width, ULSI integrated circuit chips with high speed, more functions, high element integration, low power consumption and low cost can be mass-produced. However, miniaturization will result in a reduction in the exposure depth of field, and stricter requirements on the flatness of the wafer surface. Therefore, the current wafer planarization process relies on chemical mechanical polishing technology to achieve "global planarization" (global planarization) in the wafer. The chemical mechanical polishing technology has a unique anisotropic removal property. In addition to being used for the planarization of the wafer surface, it can also be applied to the production of the damascene structure of vertical and horizontal metal interconnects (interconnects), and the front-end process. Fabrication of trench isolation (STI) structures and advanced components, planarization of micro-electromechanical systems and fabrication of flat-panel displays, etc.

CMP technology is to use the principle of mechanical grinding, cooperate with appropriate slurry (slurry) to carry out hydrolysis reaction, so as to "polish" the surface with ups and downs. A typical chemical mechanical polishing technique is to arrange the surface to be polished of the wafer opposite to a rotating polishing pad, and provide a slurry containing abrasive grains and chemical additives on the polishing pad. When the protruding part of the wafer surface is in contact with the polishing pad, the chemical additives in the slurry will cause a hydrolysis reaction at the contact part, and then cooperate with the mechanical grinding of the wafer on the polishing pad to remove the contact with the polishing pad protruding part. A flat surface can be formed through repeated actions of the above chemical reaction and mechanical polishing.

At present, there is another technology called stationary chemical mechanical polishing, which uses a polishing pad embedded with abrasive grains for polishing. During grinding, the abrasive grains buried in the polishing pad will be released to assist the mechanical grinding of the wafer.

Generally, the non-stationary chemical mechanical polishing has a fast polishing speed, and it is easy to cause the object to be polished to be depressed during the polishing process. Although fixed chemical mechanical polishing can avoid the sinking phenomenon, it is rarely used alone because of the low polishing rate.

At present, there is a combination of non-fixed chemical mechanical polishing and fixed chemical mechanical polishing to remove the insulating layer on the wafer. It first uses SiLECT6000 high selectivity slurry (HSS) non-fixed chemical mechanical Grinding process to quickly remove most of the insulating layer on the wafer, followed by SWR521 stationary chemical mechanical polishing for fine grinding. In this way, the problem of sinking can be avoided, and the situation of scratching (mircoscratch) is rare. However, the change of removal rate of HSS slurry is nonlinear, and its process window width is also very narrow.

Another way is to perform a non-fixed chemical mechanical polishing process using a silicon oxide (SiO ₂ ) type slurry to quickly remove most of the insulating layer on the wafer, and then use a CeO ₂ abrasive grain. Fixed chemical mechanical grinding process for fine grinding. Although this method can increase the width of the process window, it will cause serious scratches for the following reasons. In the fixed chemical mechanical polishing process, the surface of the silicon oxide abrasive grains left by the non-fixed chemical mechanical polishing process will be hydrolyzed to generate -SiOH, and then dissociate to form ^-SiO- and H ⁺ ; while CeO ₂ abrasive grains The surface will be hydrolyzed to generate -CeOH, and then dissociated into -Ce ⁺ and OH ^- . Due to the Lewis acid-base reaction between -Ce ⁺ and -SiO ^- , large _Cex SiO _y particles will be produced, and the reaction mechanism is illustrated as follows. The _{CexSiOy particles} easily scratch the surface of the wafer.

Contents of the invention

The invention provides a method for removing an insulating layer on a substrate, which can increase the width of a process window.

The present invention also provides a method for removing the insulating layer on the substrate, which can reduce the scratching of the substrate.

The present invention further provides a chemical mechanical polishing process, which can increase the width of the process window and reduce the scratching of the substrate.

The present invention proposes a method for removing an insulating layer on a substrate. The method includes sequentially performing first and second chemical mechanical polishing processes on the insulating layer, wherein the pH value of the slurry used in the first chemical mechanical polishing process is equal to and greater than that of the slurry used in the second chemical mechanical polishing process 7. A cleaning step is also included between the first and second CMP processes to remove specific substances that would cause harmful particle generation.

According to an embodiment of the present invention, in the method for removing the insulating layer on the substrate, the cleaning step may be performed on a grinding disc, which is the same as or different from the grinding disc used in the first chemical mechanical polishing process.

According to the embodiment of the present invention, in the method for removing the insulating layer on the substrate, the first chemical mechanical polishing process includes, for example, a non-stationary chemical mechanical polishing process, while the second chemical mechanical polishing process includes a stationary chemical mechanical polishing process . At this time, the above-mentioned specific substance may be the first abrasive particles used in the first chemical mechanical polishing process, and the first abrasive particles will interact with the second abrasive particles used in the second chemical mechanical polishing process to form the harmful particles. For example, the material of the first abrasive grains includes silicon oxide, the material of the second abrasive grains includes cerium oxide, and the harmful particles formed by the interaction of the two abrasive grains are _{CexSiOy particles} .

According to an embodiment of the present invention, in the method for removing the insulating layer on the substrate, when the specific substance that causes harmful particles to be generated is the first abrasive grain, the cleaning step includes rinsing the substrate with deionized water, and simultaneously polishing ( buff). The cleaning step is performed, for example, in a grinding disc that is the same as or different from the grinding disc used in the first chemical mechanical polishing process, such as a grinding disc with a polishing pad.

According to the embodiment of the present invention, in the above method for removing the insulating layer on the substrate, when the specific substance that causes the generation of harmful particles is the first abrasive grain, the cleaning step is, for example, treating the substrate with chemicals to make the surface of the insulating layer having the same electrical charge as the plurality of first abrasive grains attached thereto, and polishing the substrate at the same time. The cleaning step is performed, for example, in a grinding disc that is different from the grinding disc used in the first chemical mechanical polishing process, such as a grinding disc with a polishing pad. In addition, the aforementioned chemicals include ammonia water, or a solution containing ammonia water.

According to the embodiment of the present invention, in the above method for removing the insulating layer on the substrate, when the specific substance that causes harmful particles to be generated is the first abrasive grain, the cleaning step is, for example, using chemicals to remove part of the insulating layer and the attached Multiple abrasive grains on an insulating layer. In one embodiment, this cleaning step is performed in a chemical bath. In another embodiment, the cleaning step also includes polishing the substrate at the same time. In this case, the cleaning step is performed, for example, in a grinding disc different from that used in the first chemical mechanical polishing process, such as having a polishing pad. grinding disc. In addition, the aforementioned chemicals include, for example, acid solutions, which include diluted hydrofluoric acid solutions, or solutions containing hydrofluoric acid.

According to an embodiment of the present invention, in the above method for removing the insulating layer on the substrate, when the first chemical mechanical polishing process includes a non-stationary chemical mechanical polishing process and the second chemical mechanical polishing process includes a stationary chemical mechanical polishing process , the non-stationary chemical mechanical polishing process, the stationary chemical mechanical polishing process and the cleaning step can all be performed in the same machine.

According to an embodiment of the present invention, in the above method for removing the insulating layer on the substrate, the first and second chemical mechanical polishing processes may each include a non-stationary chemical mechanical polishing process or a stationary chemical mechanical polishing process.

According to an embodiment of the present invention, in the method for removing the insulating layer on the substrate, the insulating layer may be an insulating layer used to form a shallow trench isolation structure.

According to an embodiment of the present invention, in the method for removing the insulating layer on the substrate, the insulating layer may be a dielectric layer.

According to an embodiment of the present invention, the above method for removing the insulating layer on the substrate further includes performing a deionized water rinsing and polishing step after the second chemical mechanical polishing process, so as to remove residues on the insulating layer.

The present invention proposes a chemical mechanical polishing process suitable for grinding a target on a substrate, comprising performing a first chemical mechanical polishing step on a first grinding disc, and then performing a cleaning step on a second grinding disc to remove the target on the substrate. Specific substances that cause the generation of harmful particles, followed by a second chemical-mechanical grinding step on a third grinding disc, wherein the slurry used in the first grinding disc has the same pH value as the slurry used in the third grinding disc equal to and greater than 7.

According to an embodiment of the present invention, in the above chemical mechanical polishing process, the second grinding disc is a grinding disc with a polishing pad.

According to an embodiment of the present invention, in the above chemical mechanical polishing process, the cleaning step includes rinsing the substrate with deionized water, and simultaneously polishing the target on the substrate.

According to an embodiment of the present invention, in the above chemical mechanical polishing process, the cleaning step includes treating the substrate with chemicals and simultaneously polishing the target on the substrate.

According to the embodiments of the present invention, in the above chemical mechanical polishing process, the chemicals include ammonia water, or a solution containing ammonia water.

According to the embodiments of the present invention, in the above chemical mechanical polishing process, the chemicals include acid liquid.

According to the embodiments of the present invention, in the above chemical mechanical polishing process, the acid solution includes dilute hydrofluoric acid solution, or a solution containing hydrofluoric acid.

According to an embodiment of the present invention, in the above chemical mechanical polishing process, the first chemical mechanical polishing step and the second chemical mechanical polishing step each include a non-stationary chemical mechanical polishing step or a stationary chemical mechanical polishing step.

According to the embodiment of the present invention, in the above-mentioned chemical mechanical polishing process, the first abrasive grain is used in the first chemical mechanical polishing step; the second abrasive grain is used in the second chemical mechanical polishing step, wherein the first abrasive grain The material includes silicon oxide; the material of the second abrasive grain includes cerium oxide; and the harmful particles are _{CexSiOy particles} .

The method for removing the insulating layer on the substrate of the present invention can increase the width of the process window.

The method for removing the insulating layer on the substrate of the present invention can reduce the scratching of the substrate.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, the preferred embodiments and attached drawings are described in detail below.

Description of drawings

FIG. 1 is a flowchart of a method for removing an insulating layer on a substrate according to an embodiment of the present invention;

2A to 2F are cross-sectional views of a manufacturing method of a shallow trench isolation structure according to an embodiment of the present invention;

3A to 3D are cross-sectional views of a planarization process of a dielectric layer of a semiconductor device according to an embodiment of the present invention.

Description of main component symbols

10~16: Steps

200, 300: base

202: pad oxide layer

204, 204a: mask layer

206: Groove

208, 208a, 208b: insulating layer

210: abrasive grain

302, 302a, 302b: dielectric layer

Detailed ways

FIG. 1 is a flowchart of a method for removing an insulating layer on a substrate according to an embodiment of the present invention.

Please refer to FIG. 1 , the method for removing the insulating layer on the substrate in this embodiment is to perform a non-fixed chemical mechanical polishing process to quickly polish the insulating layer on the substrate (step 10 ). In one example, the slurry used in the chemical mechanical polishing process is silicon oxide type slurry, such as SS-25 type produced by Cabot Company, and its pH value is greater than 7. Because the surface of silicon oxide (SiO ₂ ) abrasive grains will be hydrolyzed to generate -SiOH, and then dissociate into -SiO ^- and H ⁺ , and -SiO ^- will produce Lewis acid-base reaction with -Ce ⁺ on the surface of CeO ₂ abrasive grains, resulting in Ce The formation of _x SiO _y particles, so if step 10 uses _SiO2 abrasive grains and then directly performs another grinding process using _CeO2 abrasive grains, the _SiO2 abrasive grains remaining on the insulating layer will cause _{CexSiOy particles} are produced, which easily scratch the surface of the wafer. In one embodiment, the chemical mechanical polishing machine has three grinding discs, and step 10 is performed with the first grinding disc.

Next, go to step 12. The cleaning step performed in step 12 can be performed in the same machine as step 10 to remove substances that will cause harmful particles to be generated. In one embodiment, the abrasive grains used in step 10 are silicon oxide abrasive grains, and the substance to be removed in this cleaning step is the silicon oxide abrasive grains remaining on the surface of the insulating layer.

In one embodiment, the cleaning step 12 is to rinse the substrate with high-pressure deionized water and polish the substrate at the same time, so as to remove the abrasive particles remaining on the surface of the insulating layer by mechanical force. The cleaning step 12 can be performed on-site in the grinding disc used for the chemical mechanical polishing process in step 10, or in another grinding disc. When the cleaning step 12 is performed in another grinding disc, a buffpad can be used for grinding.

In another embodiment, the removal step 12 is to change the Zeta potential (zeta potential) of the substrate surface with a chemical, so that the surface of the insulating layer and the abrasive grains attached thereto have the same electric charge, so as to generate mutual repulsion. action, and at the same time the substrate is ground to remove the abrasive particles by mechanical force. When the insulating layer is a silicon oxide layer and the silicon oxide abrasive grains are used in step 10, the chemicals used in the removal step 12 are, for example, alkali, so that the surface of the silicon oxide insulating layer on the substrate and the abrasive grains are all negatively charged, and the abrasive grains Repels off the surface of the insulating layer. The chemicals used in the cleaning step 12 include alkaline solution such as ammonia water, or a solution containing ammonia water (for example, a solution containing ammonia water and hydrogen peroxide, such as RCA solution produced by RCA Company, the concentration of which is less than 20 wt%). This cleaning step 12 is carried out in a grinding disc different from step 10, which can be polished with a polishing pad at the same time. In one embodiment, the chemical mechanical polishing machine has three grinding discs, and step 12 is performed with the second grinding disc.

In another embodiment, the cleaning step 12 uses a chemical to remove part of the insulating layer and abrasive particles attached thereto. When the insulating layer is silicon oxide, the chemical used in the cleaning step 12 is, for example, an acid solution to remove part of the insulating layer on the substrate and the abrasive grains thereon. The acid liquid used in the cleaning step 12 includes hydrofluoric acid solution, or a solution containing hydrofluoric acid, and its concentration is 0.02-1 wt%. In one example, the cleaning step 12 is performed by immersing the substrate in a chemical bath containing chemicals. In another example, in the cleaning step 12 , in addition to removing part of the insulating layer with chemicals, the substrate is also polished to remove the abrasive grains by mechanical force. This cleaning step 12 is carried out in a grinding disc different from step 10, which can be polished using a polishing pad. In one embodiment, the chemical mechanical polishing machine has three grinding discs, and step 12 is performed with the second grinding disc.

Afterwards, step 14 is performed, in which a stationary chemical mechanical polishing process is performed in the same machine to finely grind the insulating layer. The pH value of the slurry used in the stationary chemical mechanical polishing process is greater than 7, and is equal to the pH value of the slurry used in step 10. The stationary chemical mechanical polishing process is carried out using a lapping pad embedded with abrasive grains. The abrasive grains used are, for example, CeO ₂ abrasive grains, or other abrasive grains (such as SiO ₂ abrasive grains) that coexist with the abrasive grains used in step 10 will cause Abrasive grains from harmful particles. Since the previous cleaning step 12 has removed the abrasive grains of the previous grinding process, the _Cex SiO _y particles will not be generated during step 14 to scratch the substrate. This cleaning step 14 is carried out in a grinding disc different from step 10 . In one embodiment, the chemical mechanical polishing machine has three grinding discs, and step 14 is performed with the third grinding disc.

After step 14 is performed, step 16 can be performed according to actual needs and the number of grinding discs of the machine. Step 16 is to perform a deionized water rinsing and buffing step to remove residues on the insulating layer, such as abrasive grains, slurry, or pollutants. The step 16 of deionized water rinsing and polishing is carried out in a grinding disc different from that of step 14, and it can be polished using a polishing pad at the same time.

As mentioned above, the material of the insulating layer that can be polished by the method of the present invention is, for example, silicon oxide. The method of the embodiment of the present invention can be applied to the manufacture of the shallow trench isolation structure.

2A to 2F are cross-sectional views of a process for manufacturing a shallow trench isolation structure according to an embodiment of the present invention.

Referring to FIG. 2A , a pad oxide layer 202 and a mask layer 204 are formed on a substrate 200 . The formation method of the pad oxide layer 202 is, for example, thermal oxidation; the material of the mask layer 204 is, for example, silicon nitride, and the formation method is, for example, chemical vapor deposition.

Next, please refer to FIG. 2B , the mask layer 204 and the pad oxide layer 202 are patterned, and trenches 206 are etched in the substrate 200 . Next, an insulating layer 208 is deposited on the substrate 200, and its material is, for example, silicon oxide, and its formation method is, for example, plasma enhanced chemical vapor deposition. The thickness of the insulating layer 208 is, for example, 6000 angstroms.

Then, referring to FIG. 2C , a non-fixed chemical mechanical polishing process (step 10 in FIG. 1 ) is performed first, so that the thickness of the insulating layer 208 a left on the mask layer 204 is about 150 to 500 angstroms. The slurry used in the chemical mechanical polishing process can be a silicon oxide type slurry, such as SS-25 type produced by Cabot Company, and its pH value is greater than 7. In one embodiment, the CMP station has three grinding discs, and this step is performed with the first grinding disc. After performing the non-fixed chemical mechanical polishing process, some abrasive particles 210 remain on the surface of the insulating layer 208a.

Afterwards, referring to FIG. 2D , a cleaning step (step 12 in FIG. 1 ) is performed to remove substances attached to the insulating layer 208 a that will cause harmful particles in the subsequent grinding process, that is, abrasive grains used in the previous grinding process. In one embodiment, the CMP station has three grinding discs, and this step is performed with the second grinding disc. When the silicon oxide abrasive grains are used in step 10, what is to be removed in the cleaning step 12 is the silicon oxide abrasive grains attached to the insulating layer 208a. The cleaning step 12 can be performed by rinsing the substrate with high pressure deionized water and simultaneously polishing, or by using chemicals (in conjunction with the polishing operation).

Used chemical can be alkaline solution, to change the Zeta potential (Zeta potential) of insulating layer 208a surface, make insulating layer 208a surface and the abrasive particle 210 that is attached thereon have the electric charge of identical electric property, and produce mutual repulsion effect. The alkaline solution is, for example, ammonia water, or a solution containing ammonia water (for example, a solution containing ammonia water and hydrogen peroxide, such as RCA solution produced by RCA Company, the concentration of which is less than 20 wt%).

The chemical used can be, for example, an acid solution to remove part of the insulating layer 208 a and the abrasive grains 210 thereon. The acid solution is, for example, a hydrofluoric acid solution, or a solution containing hydrofluoric acid, and its concentration is, for example, 0.02-1 wt%.

Thereafter, please refer to Fig. 2E, carry out a stationary chemical mechanical polishing process (Fig. 1 step 14), the pH value of the slurry used is greater than 7, and the slurry used in the previous non-stationary chemical mechanical polishing process The pH values are equal. In one embodiment, the CMP station has three grinding discs, and this step is performed with the third grinding disc. The stationary chemical mechanical polishing process can use a polishing pad embedded with _CeO2 abrasive grains until the mask layer 204 is exposed, wherein the thickness loss of the mask layer 204 is, for example, about 50 angstroms, leaving the mask layer 204a and the insulating layer 208b. Although -Ce ⁺ _on the surface of _CeO2 abrasive grains will bond with ^-SiO- on the surface of silicon oxide abrasive grains used in the previous grinding process, resulting in the formation of _CexSiOy particles that are easy to scratch the surface of the substrate, but due to the previous cleaning Step 12 has removed the residual silicon oxide abrasive grains 210, so the scratches caused by _{the CexSiOy} grains can be greatly reduced.

Afterwards, referring to FIG. 2F , the mask layer 204 and the pad oxide layer 202 are removed, for example, by an isotropic etching process.

In addition, step 16 of FIG. 1 can be performed again according to actual needs, rinsing and polishing with deionized water to remove residues on the insulating layer 208b.

It is also proved by experiments that the method of this embodiment can reduce 86% of scratches.

In addition to being applicable to the manufacture of the shallow trench isolation structure, the method of the embodiment of the present invention can also be used for polishing the dielectric layer.

3A to 3D are cross-sectional views of a planarization process of a dielectric layer of a semiconductor device according to an embodiment of the present invention.

Referring to FIG. 3A , a dielectric layer 302 has been formed on a substrate 300 . The dielectric layer 302 may be an interlayer dielectric (ILD) or an intermetal dielectric (IMD) or the like. The dielectric layer 302 has a surface with ups and downs due to the underlying components, and its material is, for example, silicon oxide, and its formation method is, for example, chemical vapor deposition.

Next, referring to FIG. 3B , a non-fixed chemical mechanical polishing process (step 10 in FIG. 1 ) is performed to remove part of the dielectric layer 302 to reduce the degree of undulation of the remaining dielectric layer 302a. The slurry used in the non-fixed chemical mechanical polishing process is, for example, a silicon oxide type slurry, such as SS-25 type produced by Cabot Company, and its pH value is greater than 7. After the polishing process using the silicon oxide type slurry, some silicon oxide abrasive grains 310 remain on the surface of the dielectric layer 302 a. In one embodiment, the CMP station has three grinding discs, and this step is performed with the first grinding disc.

Afterwards, referring to FIG. 3C , a cleaning step (step 12 in FIG. 1 ) is performed to remove substances on the dielectric layer 302 a that will generate harmful particles in the subsequent grinding process, that is, abrasive grains used in the previous grinding process. In one embodiment, the CMP station has three grinding discs, and this step is performed with the second grinding disc. When the silicon oxide abrasive grains are used in step 10, what is to be removed in the cleaning step 12 is the residual silicon oxide abrasive grains 310 on the surface of the dielectric layer 302a. The cleaning step 12 can be performed by rinsing the substrate with high-pressure deionized water in conjunction with polishing, or using chemicals (in conjunction with polishing).

The chemical used can be an alkaline solution to change the Zeta potential (Zeta potential) on the surface of the dielectric layer 302a, so that the surface of the dielectric layer 302a and the abrasive grains 310 on it have the same electric charge, so as to generate mutual repulsion . The alkaline solution is, for example, ammonia water, or a solution containing ammonia water (for example, a solution containing ammonia water and hydrogen peroxide, such as the RCA solution produced by RCA Company, the concentration of which is 20 wt %) or less.

The chemical used can be, for example, an acid solution to remove part of the dielectric layer 302 a and the abrasive grains 310 on the substrate. The acid solution is, for example, a hydrofluoric acid solution, or a solution containing hydrofluoric acid, and its concentration is 0.02-1 wt%.

Thereafter, please refer to Fig. 3D, carry out a stationary chemical mechanical polishing process (Fig. 1 step 14), the pH value of the slurry used is greater than 7, and the pH of the slurry used in the non-stationary chemical mechanical polishing process The values are equal. In one embodiment, the CMP station has three grinding discs, and the step is performed with the third grinding disc. The stationary chemical mechanical polishing process may be performed using a polishing pad embedded with CeO ₂ abrasive grains to further planarize the dielectric layer 302a, leaving a planarized dielectric layer 302b. Since the silicon oxide abrasive particles 310 have been removed in the previous cleaning step 12, the scratches caused by _{the CexSiOy} particles can be greatly reduced.

According to actual needs, step 16 of FIG. 1 can be performed again, rinsing and polishing with deionized water to remove residues on the dielectric layer 302b.

Although in the above embodiments, the non-stationary chemical mechanical polishing process is firstly performed and then the stationary chemical mechanical polishing process is performed for illustration. However, the present invention can also be applied to the situation where a stationary CMP process is performed first and then a non-stationary CMP process, or any two non-stationary CMP processes, any two stationary CMP processes , or any other same or different chemical mechanical grinding process, the hydrolyzate of different abrasive particles used in it will react to produce harmful particles.

In addition, although in the above embodiment, the material that will cause harmful particles to be produced in the grinding process that is carried out later is the abrasive grain used in the grinding process that is carried out earlier, but the present invention can also be applied to the material that produces harmful particles in the grinding process that is carried out later. In the case where the substance is other than abrasive particles used or produced by a previous grinding process, just adjust the aforementioned removal steps as needed.

Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Anyone skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall prevail as defined by the appended claims.

Claims (33)

1. method that removes suprabasil insulating barrier, comprise this insulating barrier is carried out first chemical mechanical milling tech and the second follow-up chemical mechanical milling tech, this first chemical mechanical milling tech is employed to grind that slurry equates with the employed pH value of grinding slurry of this second chemical mechanical milling tech and greater than 7, and wherein

Between this first and second chemical mechanical milling tech, comprise the removing step, to remove the predetermined substance that can cause particulates emission to produce.

2. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this removing step is carried out in abrasive disk, and this abrasive disk is identical with the employed abrasive disk of this first chemical mechanical milling tech, or different.

3. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this first chemical mechanical milling tech comprises the free-standing chemical mechanical milling tech, and this second chemical mechanical milling tech comprises fixed chemical mechanical milling tech.

4. the method that removes suprabasil insulating barrier as claimed in claim 3; wherein this predetermined substance is employed first abrasive grains of this first chemical mechanical milling tech; this first abrasive grains can with the employed second abrasive grains effect of this second chemical mechanical milling tech, and form this particulates emission.

5. the method that removes suprabasil insulating barrier as claimed in claim 4, wherein the material of this first abrasive grains comprises silica, and the material of this second abrasive grains comprises cerium oxide, and this particulates emission of dawn is Ce _xSiO _yParticulate.

6. the method that removes suprabasil insulating barrier as claimed in claim 4, wherein this removing step comprises with this substrate of deionized water rinsing, and polishes this substrate simultaneously.

7. the method that removes suprabasil insulating barrier as claimed in claim 6, wherein this removing step is carried out in abrasive disk, and this abrasive disk is identical with the employed abrasive disk phase of this first chemical mechanical milling tech XOR.

8. the method that removes suprabasil insulating barrier as claimed in claim 7, wherein this removing step is carried out in having the abrasive disk of burnishing pad, and this abrasive disk and this user of first chemical mechanical milling tech institute are different.

9. the method that removes suprabasil insulating barrier as claimed in claim 4, wherein this removing step comprises: with this substrate of chemical treatments, make this insulating barrier and have identical electrical electric charge, and polish this substrate simultaneously attached to a plurality of first abrasive grains on this insulating barrier.

10. the method that removes suprabasil insulating barrier as claimed in claim 9, wherein this removing step is carried out in abrasive disk, and this abrasive disk and the employed abrasive disk of this first chemical mechanical milling tech are different.

11. the method that removes suprabasil insulating barrier as claimed in claim 10, wherein this removing step is carried out in having the abrasive disk of burnishing pad.

12. the method that removes suprabasil insulating barrier as claimed in claim 9, wherein this chemicals comprises ammoniacal liquor, or contains the solution of ammoniacal liquor.

13. the method that removes suprabasil insulating barrier as claimed in claim 4, wherein this removing step comprise with chemicals remove the part this insulating barrier with attached to a plurality of first abrasive grains on this insulating barrier.

14. the method that removes suprabasil insulating barrier as claimed in claim 13, wherein this removing step is carried out in chemical tank.

15. the method that removes suprabasil insulating barrier as claimed in claim 13, wherein this removing step also comprises and polishes this substrate simultaneously.

16. the method that removes suprabasil insulating barrier as claimed in claim 15, wherein this removing step is carried out in abrasive disk, and this abrasive disk is different with the employed abrasive disk of this first chemical mechanical milling tech.

17. the method that removes suprabasil insulating barrier as claimed in claim 16, wherein this removing step is carried out in having the abrasive disk of burnishing pad.

18. the method that removes suprabasil insulating barrier as claimed in claim 13, wherein this chemicals comprises acid solution.

19. the method that removes suprabasil insulating barrier as claimed in claim 18, wherein this acid solution comprises diluent hydrofluoric acid solution, or contains the solution of hydrofluoric acid.

20. the method that removes suprabasil insulating barrier as claimed in claim 3, wherein this free-standing chemical mechanical milling tech, this fixed chemical mechanical milling tech and this removing step are carried out in same board.

21. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this first chemical mechanical milling tech and this second chemical mechanical milling tech comprise free-standing chemical mechanical milling tech or fixed chemical mechanical milling tech separately.

22. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this insulating barrier is in order to form the insulating barrier of fleet plough groove isolation structure.

23. the method that removes suprabasil insulating barrier as claimed in claim 1, wherein this insulating barrier is a dielectric layer.

24. the method that removes suprabasil insulating barrier as claimed in claim 1 also is included in this second chemical mechanical milling tech and carries out deionized water rinsing polishing step afterwards, to remove the residue on this insulating barrier.

25. a chemical mechanical milling tech is applicable to and grinds suprabasil subject matter, comprising:

On first abrasive disk, carry out the first cmp step;

On second abrasive disk, remove step, to remove the predetermined substance that can cause particulates emission to produce in this substrate; And

After this removes step, on the 3rd abrasive disk, carry out the second cmp step;

Wherein this first abrasive disk is employed grinds that slurry equates with the employed pH value of grinding slurry of the 3rd abrasive disk and greater than 7.

26. chemical mechanical milling tech as claimed in claim 25, wherein this second abrasive disk is the abrasive disk with burnishing pad.

27. chemical mechanical milling tech as claimed in claim 26, wherein this removing step comprises with this substrate of deionized water rinsing, and polishes this subject matter of this substrate simultaneously.

28. chemical mechanical milling tech as claimed in claim 26, wherein this removing step comprises with this substrate of chemical treatments, and polishes this subject matter of this substrate simultaneously.

29. chemical mechanical milling tech as claimed in claim 28, wherein this chemicals comprises ammoniacal liquor, or contains the solution of ammoniacal liquor.

30. chemical mechanical milling tech as claimed in claim 28, wherein this chemicals comprises acid solution.

31. chemical mechanical milling tech as claimed in claim 30, wherein this acid solution comprises diluent hydrofluoric acid solution, or contains the solution of hydrofluoric acid.

32. chemical mechanical milling tech as claimed in claim 26, wherein this first cmp step and this second cmp step comprise free-standing cmp step or fixed cmp step separately.

33. chemical mechanical milling tech as claimed in claim 26 wherein uses first abrasive grains in this first cmp step; Use second abrasive grains in this second cmp step, wherein the material of this first abrasive grains comprises silica; The material of this second abrasive grains comprises cerium oxide; And this particulates emission is Ce _xSiO _yParticulate.

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