CN101281946A - LED structure capable of being applied to AC cycle as well as drive method thereof - Google Patents
LED structure capable of being applied to AC cycle as well as drive method thereof Download PDFInfo
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- CN101281946A CN101281946A CNA2008100282892A CN200810028289A CN101281946A CN 101281946 A CN101281946 A CN 101281946A CN A2008100282892 A CNA2008100282892 A CN A2008100282892A CN 200810028289 A CN200810028289 A CN 200810028289A CN 101281946 A CN101281946 A CN 101281946A
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- 238000000034 method Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000004020 luminiscence type Methods 0.000 claims description 45
- 238000010276 construction Methods 0.000 claims description 30
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- 238000000576 coating method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910010092 LiAlO2 Inorganic materials 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 2
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Abstract
A luminescent diode structure applied to AC loop includes: a substrate; a buffer layer arranged on the substrate; a first luminescent unit which comprises a first n-type layer and a first p-type layer and is arranged on the substrate; a tunnel junction equipped between the first luminescent unit and a second luminescent unit; the second luminescent unit which comprises a second n-type layer and a second p-type layer and is arranged on the tunnel junction; a first electrode electrically connected to the first n-type layer of the first luminescent unit and the second p-type layer of the second luminescent unit; and a second electrode electrically connected to the tunnel junction. The luminescent diode structure can emit light at both of positive half cycle and negative half cycle of the alternating current and has positive direction conduction capability, so that, the luminescent diode not only can be directly connected to alternating current, but also has high-voltage resistance and static breakdown protection function.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, particularly a kind of light emitting diode construction that can be applicable to ac circuit.
Background technology
Light-emitting diode (LED) is the forward biased PN junction diode with semi-conducting material manufacturing.Its luminescence mechanism is that the non equilibrium carrier of injection (electron-hole pair) is at the diffusion process recombination luminescence when injecting forward current at the PN junction two ends.The principle of luminosity of light-emitting diode is different with the principle of luminosity of incandescent lamp heating, so light-emitting diode is called as cold light source.Use light emitting diode illuminator to have following advantage: 1.LED structurally not have glass shell, do not need as incandescent lamp or fluorescent lamp, in fluorescent tube, to vacuumize or charge into specific gas, therefore LED antidetonation, impact resistance are good, are produced, transport, use each link to offer convenience.2.LED it is very little that the volume of element can be done, and is convenient to the layout and the design of various device more.3.LED the light ray energy concentration degree of sending very high, concentrate in the less wavelength window purity height.4.LED the life-span of element is very long, generally between 50,000-100,000 hours, even frequent switch can not have influence on useful life yet.5.LED the response time is very fast, in the microsecond rank.6.LED luminous directive property very strong, brightness decay is more much lower than conventional light source.7.LED do not add " mercury ", very environmental protection in process of production.Because light-emitting diode has above numerous advantage, the application of light-emitting diode is also increasingly extensive.
But because some characteristics that self exist of light-emitting diode make it can be restricted on using.Light-emitting diode is because the influence of congenital physical characteristic is mainly its restriction that is subjected on using: must receive low pressure (＜6V) direct current (DC).In this case, because the AC mains characteristic is high pressure (110V or 220V), no matter and, all may damage light-emitting diode, so all must cooperate DC converting circuit could adopt mains system when using AC mains forward or under the operation of revers voltage.About this point, the present practice is nothing more than following: 1. the dozens of of light-emitting diode component must being connected uses, and 2. alternating current is utilized transducer (AC--DC) to be converted to direct current and step-down.3. light-emitting diode component other rectifier assembly in parallel is used together.But if use the problem of many light-emitting diode series connection to be: in case as long as after a light-emitting diode component inefficacy or damage are arranged on the series circuit, will have a strong impact on other light-emitting diode component on series circuit; Reduce this situation, in a single day the then necessary light-emitting diode component quantity that as far as possible reduces series connection reduces quantity, must increase other assembly (as resistance) again and come attrition voltage.
Summary of the invention
For solve the problem that light-emitting diode exists in ac circuit, the invention provides a kind of light emitting diode construction that can be applicable to ac circuit.
In order to reach above purpose, light emitting diode construction provided by the invention comprises: a substrate; One resilient coating is arranged at this substrate top; One first luminescence unit comprises one the one n type layer and one the one p type layer, is positioned at this substrate top; One tunnel junction is between first luminescence unit and second luminescence unit; One second luminescence unit comprises one the 2nd n type layer and one the 2nd p type layer, is positioned at this tunnel junction top; One first electrode electrically connects with a n type layer of this first luminescence unit and the 2nd p type layer of this second luminescence unit; And one second electrode, connect this tunnel junction and electrically connect.
The diode structure that can be applicable to ac circuit provided by the invention has first luminescence unit and second luminescence unit; can be luminous successively at positive half cycle of alternating current and negative half period; because this light emitting diode construction all can luminously have the forward conduction characteristic in the positive-negative half-cycle of alternating current; thereby this light-emitting diode not only can directly be connected use with alternating current, has function high pressure resistant and the electrostatic breakdown protection simultaneously.
Description of drawings
Fig. 1 a is the light emitting diode construction schematic diagram that can be applicable to ac circuit.
Fig. 1 b is the equivalent circuit diagram of Fig. 1 a.
Fig. 2 a is the schematic diagram of light emitting diode construction after the fluorescent material coating that can be applicable to ac circuit.
Fig. 2 b is the output light result of Fig. 2 a.
Fig. 3 is the schematic diagram of light emitting diode construction after another fluorescent material coating that can be applicable to ac circuit.
Fig. 4 a is a plurality of light emitting diode construction serial connection schematic diagrames.
Fig. 4 b is Fig. 4 a equivalent circuit diagram.
Embodiment
See also Fig. 1 a and Fig. 1 b, Fig. 1 a is the light emitting diode construction schematic diagram that can be applicable to ac circuit, and its equivalent circuit diagram carries out reverse parallel connection by first luminescence unit 20 and second luminescence unit 30 shown in Fig. 1 b.In Fig. 1 a, this light-emitting diode structure 100 comprises: a substrate 102; One resilient coating 126 is arranged at this substrate 102 tops; One first luminescence unit 20 comprises one the one n type layer 104, one the one p type layer 108 and first luminescent layer 106, and is positioned at this substrate 102 tops; One tunnel junction 110 is roughly between first luminescence unit 20 and second luminescence unit 30; One second luminescence unit 30 comprises one the 2nd n type layer 124, one the 2nd p type layer 120 and one second luminescent layer 122, and is positioned at this tunnel junction 110 tops; One first electrode 118 electrically connects with a n type layer 104 of this first luminescence unit 20 and the 2nd p type layer 120 of this second luminescence unit 30; One second electrode 112 electrically connects with this tunnel junction 110; One oxide layer 114 is isolated the contact of first electrode 118 to other layers; And anti oxidation layer 116, prevent this diode internal structure oxidation.
When the light emitting diode construction that can be applicable to ac circuit applies alternating current, positive half cycle at alternating current, electric current is flow to second electrode, 112, the second luminescence units 30 again and is driven and lights by first electrode 118, second luminescence unit 30 of flowing through, and first luminescence unit 20 is not lighted; Negative half period at alternating current; electric current flows to second electrode 112 again by first electrode 118, first luminescence unit 20 of flowing through; first luminescence unit 20 is driven to be lighted; no matter therefore this light emitting diode construction is that forward voltage or reverse voltage all have the forward conduction characteristics of luminescence; not only can directly be connected use, have function high pressure resistant and the electrostatic breakdown protection simultaneously with alternating current.
Can be applicable in the light emitting diode construction of ac circuit at this, the material of substrate 102 can be Sapphire, SiC, Si, GaAs, LiAlO2, MgO, ZnO, GaN, any among AlN or the InN.Resilient coating 126 can be the GaN layer.The one n type layer 104 can be the n type GaN layer of mixing Si, and a p type layer 108 can be the p type GaN layer of mixing Mg, and first luminescent layer 106 is the InGaN layer.Tunnel junction 110 can be the InGaN layer of heavy doping Si and the InGaN layer of heavy doping Mg.The 2nd n type layer 124 can be the n type GaN layer of mixing Si, and the 2nd p type layer 120 is p type GaN layers of mixing Mg, and first luminescent layer 122 is the InGaN layer.
See also Fig. 2 a, Fig. 2 a is the schematic diagram of light emitting diode construction after the fluorescent material coating that can be applicable to ac circuit.Light-emitting diode structure among Fig. 2 a light emitting diode construction basic and among Fig. 1 a is identical, difference is that the diode structure among Fig. 2 a has increased by a phosphor powder layer 128 than Fig. 1 a, the light that these phosphor powder layer 128 energy-absorbings are higher than ruddiness, send green glow when being driven with seasonal first luminescence unit 20, send blue light when making second luminescence unit 30 be driven, then this diode structure can form the light of the AC-White LED of R+G+B three mixture of colours shown in Fig. 2 b in the output result in the ac circuit.
See also Fig. 3, Fig. 3 is the schematic diagram of light emitting diode construction after another fluorescent material coating that can be applicable to ac circuit.Light-emitting diode structure among Fig. 3 light emitting diode construction basic and among Fig. 1 a is identical, difference is that the diode structure among Fig. 3 has increased by a phosphor powder layer 138 than Fig. 1 a, this phosphor powder layer 138 can absorb blue light, all send blue light when being driven with seasonal first luminescence unit 20 and second luminescence unit 30, then this diode structure is exported the light of AC-White LED in ac circuit.
In the practical application, see also Fig. 4 a, can be by adding one second oxide layer 430 and an articulamentum 428 couples together two or more light emitting diode constructions, its equivalent circuit diagram is equivalent to a plurality of first luminescence units 20 of being associated in together of scurrying and scurries second luminescence unit, 30 parallel connections that are associated in a plurality of shown in Fig. 4 b.This diode structure can directly apply under the civil power environment of ac circuit, as 110V or 220V after the certain quantity of serial connection.
The above only is preferred embodiment of the present invention, and all equalizations of making according to the present invention change, all within claim of the present invention.
Claims (10)
1. a light emitting diode construction that can be applicable to ac circuit is characterized in that, comprising:
One substrate;
One resilient coating is arranged at this substrate top;
One first luminescence unit comprises one the one n type layer and one the one p type layer, is positioned at this substrate top;
One tunnel junction is between first luminescence unit and second luminescence unit;
One second luminescence unit comprises one the 2nd n type layer and one the 2nd p type layer, is positioned at this tunnel junction top;
One first electrode electrically connects with a n type layer of this first luminescence unit and the 2nd p type layer of this second luminescence unit; And
One second electrode connects this tunnel junction and electrically connects.
2. light emitting diode construction according to claim 1 is characterized in that this light-emitting diode also comprises an oxide layer.
3. light emitting diode construction according to claim 1 is characterized in that the material of this substrate can be Sapphire, SiC, Si, GaAs, LiAlO2, MgO, ZnO, GaN, any among AlN or the InN.
4. light emitting diode construction according to claim 1 is characterized in that the light wavelength that this first luminescence unit and second luminescence unit send is identical or different.
5. light emitting diode construction according to claim 1 is characterized in that this first luminescence unit more comprises one first luminescent layer.
6. light emitting diode construction according to claim 1 is characterized in that this second luminescence unit more comprises one second luminescent layer.
7. light emitting diode construction according to claim 1, a n type layer that it is characterized in that this first luminescence unit is a n type GaN layer of mixing Si.
8. light emitting diode construction according to claim 1, a p type layer that it is characterized in that this first luminescence unit is a p type GaN layer of mixing Mg.
9. light emitting diode construction according to claim 1, the 2nd n type layer that it is characterized in that this second luminescence unit is a n type GaN layer of mixing Si, and the 2nd p type layer is a p type GaN layer of mixing Mg.
10. driving method of light emitting diode construction according to claim 1, it is characterized in that, when when the light emitting diode construction that can be applicable to ac circuit applies alternating current, positive half cycle at alternating current, second luminescence unit is driven to be lighted, and, first luminescence unit is driven lights at the negative half period of alternating current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100282892A CN101281946A (en) | 2008-05-21 | 2008-05-21 | LED structure capable of being applied to AC cycle as well as drive method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100282892A CN101281946A (en) | 2008-05-21 | 2008-05-21 | LED structure capable of being applied to AC cycle as well as drive method thereof |
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| Publication Number | Publication Date |
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| CN101281946A true CN101281946A (en) | 2008-10-08 |
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| CNA2008100282892A Pending CN101281946A (en) | 2008-05-21 | 2008-05-21 | LED structure capable of being applied to AC cycle as well as drive method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024837A (en) * | 2009-09-11 | 2011-04-20 | 晶元光电股份有限公司 | Light emitting element |
| CN103199163A (en) * | 2012-01-06 | 2013-07-10 | 华夏光股份有限公司 | Light-emitting diode device |
| CN103779450A (en) * | 2012-10-17 | 2014-05-07 | 甘志银 | Integration method for increasing luminous power of LED |
| CN105226142A (en) * | 2014-07-01 | 2016-01-06 | 无锡华润华晶微电子有限公司 | A kind of gallium nitrate based high-voltage LED and preparation method thereof |
| CN106025017A (en) * | 2016-06-01 | 2016-10-12 | 天津三安光电有限公司 | Light emitting diode with electrostatic protection structure and manufacturing method therefor |
| CN106206865A (en) * | 2016-07-15 | 2016-12-07 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED and preparation method thereof |
| CN107180901A (en) * | 2016-03-10 | 2017-09-19 | 晶元光电股份有限公司 | Light emitting element |
| CN109920782A (en) * | 2019-03-15 | 2019-06-21 | 深圳第三代半导体研究院 | A front-mounted integrated unit diode chip |
| CN110265516A (en) * | 2019-05-23 | 2019-09-20 | 武汉大学 | A kind of deep ultraviolet LED chip and preparation method thereof |
| CN111788690A (en) * | 2017-12-22 | 2020-10-16 | 亮锐有限责任公司 | Ill-nitride multi-wavelength light-emitting diodes |
-
2008
- 2008-05-21 CN CNA2008100282892A patent/CN101281946A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102024837A (en) * | 2009-09-11 | 2011-04-20 | 晶元光电股份有限公司 | Light emitting element |
| CN102024837B (en) * | 2009-09-11 | 2014-05-07 | 晶元光电股份有限公司 | Light emitting element |
| CN103199163A (en) * | 2012-01-06 | 2013-07-10 | 华夏光股份有限公司 | Light-emitting diode device |
| CN103199163B (en) * | 2012-01-06 | 2016-01-20 | 华夏光股份有限公司 | Light-emitting diode assembly |
| CN103779450A (en) * | 2012-10-17 | 2014-05-07 | 甘志银 | Integration method for increasing luminous power of LED |
| CN105226142A (en) * | 2014-07-01 | 2016-01-06 | 无锡华润华晶微电子有限公司 | A kind of gallium nitrate based high-voltage LED and preparation method thereof |
| CN105226142B (en) * | 2014-07-01 | 2018-01-23 | 无锡华润华晶微电子有限公司 | A kind of gallium nitride base high-voltage LED and preparation method thereof |
| CN107180901A (en) * | 2016-03-10 | 2017-09-19 | 晶元光电股份有限公司 | Light emitting element |
| CN107180901B (en) * | 2016-03-10 | 2020-08-18 | 晶元光电股份有限公司 | light-emitting element |
| CN106025017A (en) * | 2016-06-01 | 2016-10-12 | 天津三安光电有限公司 | Light emitting diode with electrostatic protection structure and manufacturing method therefor |
| CN106025017B (en) * | 2016-06-01 | 2019-01-15 | 天津三安光电有限公司 | Light emitting diode and preparation method thereof with electrostatic protection |
| CN106206865A (en) * | 2016-07-15 | 2016-12-07 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED and preparation method thereof |
| CN106206865B (en) * | 2016-07-15 | 2018-05-22 | 厦门乾照光电股份有限公司 | A kind of high-voltage LED and preparation method thereof |
| CN111788690A (en) * | 2017-12-22 | 2020-10-16 | 亮锐有限责任公司 | Ill-nitride multi-wavelength light-emitting diodes |
| CN111788690B (en) * | 2017-12-22 | 2024-12-03 | 亮锐有限责任公司 | III-nitride multi-wavelength light emitting diodes |
| CN109920782A (en) * | 2019-03-15 | 2019-06-21 | 深圳第三代半导体研究院 | A front-mounted integrated unit diode chip |
| CN109920782B (en) * | 2019-03-15 | 2021-08-17 | 深圳第三代半导体研究院 | A front-mounted integrated unit diode chip |
| CN110265516A (en) * | 2019-05-23 | 2019-09-20 | 武汉大学 | A kind of deep ultraviolet LED chip and preparation method thereof |
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Open date: 20081008 |