CN101277992A - Epoxy resin composition and semiconductor device - Google Patents
Epoxy resin composition and semiconductor device Download PDFInfo
- Publication number
- CN101277992A CN101277992A CNA2006800363672A CN200680036367A CN101277992A CN 101277992 A CN101277992 A CN 101277992A CN A2006800363672 A CNA2006800363672 A CN A2006800363672A CN 200680036367 A CN200680036367 A CN 200680036367A CN 101277992 A CN101277992 A CN 101277992A
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- China
- Prior art keywords
- epoxy resin
- composition epoxy
- compound
- resins
- weight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 122
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 122
- 239000000203 mixture Substances 0.000 title claims abstract description 98
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 81
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 32
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 29
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 claims abstract description 20
- 238000000465 moulding Methods 0.000 claims abstract description 19
- 229920005989 resin Polymers 0.000 claims description 106
- 239000011347 resin Substances 0.000 claims description 106
- 239000004593 Epoxy Substances 0.000 claims description 80
- -1 compound zinc molybdate Chemical class 0.000 claims description 48
- 239000003063 flame retardant Substances 0.000 claims description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000012764 mineral filler Substances 0.000 claims description 23
- CMLFRMDBDNHMRA-UHFFFAOYSA-N 2h-1,2-benzoxazine Chemical group C1=CC=C2C=CNOC2=C1 CMLFRMDBDNHMRA-UHFFFAOYSA-N 0.000 claims description 21
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 21
- 230000007704 transition Effects 0.000 claims description 21
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 20
- XAEWLETZEZXLHR-UHFFFAOYSA-N zinc;dioxido(dioxo)molybdenum Chemical compound [Zn+2].[O-][Mo]([O-])(=O)=O XAEWLETZEZXLHR-UHFFFAOYSA-N 0.000 claims description 17
- 229910002026 crystalline silica Inorganic materials 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 claims description 15
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 claims description 14
- 150000004696 coordination complex Chemical class 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- MNAHQWDCXOHBHK-UHFFFAOYSA-N 1-phenylpropane-1,1-diol Chemical compound CCC(O)(O)C1=CC=CC=C1 MNAHQWDCXOHBHK-UHFFFAOYSA-N 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 7
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 7
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 5
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 claims description 4
- WGLQHUKCXBXUDV-UHFFFAOYSA-N 3-aminophthalic acid Chemical compound NC1=CC=CC(C(O)=O)=C1C(O)=O WGLQHUKCXBXUDV-UHFFFAOYSA-N 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 4
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 125000001424 substituent group Chemical group 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 2
- 125000004429 atom Chemical group 0.000 claims description 2
- 150000001721 carbon Chemical group 0.000 claims description 2
- 125000001033 ether group Chemical group 0.000 claims description 2
- 125000004437 phosphorous atom Chemical group 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 125000004646 sulfenyl group Chemical group S(*)* 0.000 claims description 2
- 125000005609 naphthenate group Chemical group 0.000 claims 1
- 125000000962 organic group Chemical group 0.000 claims 1
- 238000012360 testing method Methods 0.000 abstract description 27
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract 2
- 238000005336 cracking Methods 0.000 abstract 1
- 239000011256 inorganic filler Substances 0.000 abstract 1
- 229910003475 inorganic filler Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 description 52
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 22
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 21
- 238000000034 method Methods 0.000 description 21
- 229930185605 Bisphenol Natural products 0.000 description 20
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 20
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 19
- 239000004643 cyanate ester Substances 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 17
- 239000004305 biphenyl Substances 0.000 description 15
- 235000010290 biphenyl Nutrition 0.000 description 15
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical class OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 13
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 12
- 150000002989 phenols Chemical class 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- SZKXDURZBIICCF-UHFFFAOYSA-N cobalt;pentane-2,4-dione Chemical compound [Co].CC(=O)CC(C)=O SZKXDURZBIICCF-UHFFFAOYSA-N 0.000 description 11
- 239000006229 carbon black Substances 0.000 description 10
- 239000007822 coupling agent Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 239000004203 carnauba wax Substances 0.000 description 7
- 235000013869 carnauba wax Nutrition 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 7
- 229920003987 resole Polymers 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000005350 fused silica glass Substances 0.000 description 6
- 229920003986 novolac Polymers 0.000 description 6
- 230000035939 shock Effects 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000001721 transfer moulding Methods 0.000 description 6
- 239000001993 wax Substances 0.000 description 6
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 5
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 5
- VCCBEIPGXKNHFW-UHFFFAOYSA-N biphenyl-4,4'-diol Chemical compound C1=CC(O)=CC=C1C1=CC=C(O)C=C1 VCCBEIPGXKNHFW-UHFFFAOYSA-N 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 150000002924 oxiranes Chemical group 0.000 description 5
- LVLZXBIWQHFREA-UHFFFAOYSA-N phenol;phosphane Chemical compound [PH4+].[O-]C1=CC=CC=C1 LVLZXBIWQHFREA-UHFFFAOYSA-N 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 4
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 4
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 4
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 4
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- MBAUPJOGRORFKR-UHFFFAOYSA-N diphenyl-(2,3,4-triaminophenyl)methanol Chemical compound NC1=C(C(=C(C=C1)C(O)(C1=CC=CC=C1)C1=CC=CC=C1)N)N MBAUPJOGRORFKR-UHFFFAOYSA-N 0.000 description 4
- 239000003365 glass fiber Substances 0.000 description 4
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 4
- 150000002460 imidazoles Chemical class 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical compound CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 4
- 238000004448 titration Methods 0.000 description 4
- 238000010792 warming Methods 0.000 description 4
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 3
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001336 alkenes Chemical class 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000003814 drug Substances 0.000 description 3
- 229940079593 drug Drugs 0.000 description 3
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
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- 125000001624 naphthyl group Chemical group 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
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- 230000000979 retarding effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- SQUJYDFTMPTTLT-UHFFFAOYSA-N 1-prop-2-ynoxynaphthalene Chemical compound C1=CC=C2C(OCC#C)=CC=CC2=C1 SQUJYDFTMPTTLT-UHFFFAOYSA-N 0.000 description 2
- LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 2
- DRGLRUYXGNMDDM-UHFFFAOYSA-N 2-prop-2-ynoxyaniline Chemical compound NC1=CC=CC=C1OCC#C DRGLRUYXGNMDDM-UHFFFAOYSA-N 0.000 description 2
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 2
- NNKQLUVBPJEUOR-UHFFFAOYSA-N 3-ethynylaniline Chemical group NC1=CC=CC(C#C)=C1 NNKQLUVBPJEUOR-UHFFFAOYSA-N 0.000 description 2
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- 125000004203 4-hydroxyphenyl group Chemical group [H]OC1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- 238000004458 analytical method Methods 0.000 description 2
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- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- 229920002866 paraformaldehyde Polymers 0.000 description 2
- TZMFJUDUGYTVRY-UHFFFAOYSA-N pentane-2,3-dione Chemical compound CCC(=O)C(C)=O TZMFJUDUGYTVRY-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 230000004044 response Effects 0.000 description 2
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- 238000010189 synthetic method Methods 0.000 description 2
- 150000003505 terpenes Chemical class 0.000 description 2
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- 125000000101 thioether group Chemical group 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- MDSHEDHFWCMYFB-UHFFFAOYSA-N (2,3,4,5-tetramethylphenyl)phosphane Chemical compound CC1=CC(P)=C(C)C(C)=C1C MDSHEDHFWCMYFB-UHFFFAOYSA-N 0.000 description 1
- OKJFKPFBSPZTAH-UHFFFAOYSA-N (2,4-dihydroxyphenyl)-(4-hydroxyphenyl)methanone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O OKJFKPFBSPZTAH-UHFFFAOYSA-N 0.000 description 1
- JEFSTMHERNSDBC-UHFFFAOYSA-N 1,2-dimethylcyclohexa-2,4-dien-1-ol Chemical compound CC1=CC=CCC1(C)O JEFSTMHERNSDBC-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- RUFPHBVGCFYCNW-UHFFFAOYSA-N 1-naphthylamine Chemical class C1=CC=C2C(N)=CC=CC2=C1 RUFPHBVGCFYCNW-UHFFFAOYSA-N 0.000 description 1
- KLIDCXVFHGNTTM-UHFFFAOYSA-N 2,6-dimethoxyphenol Chemical group COC1=CC=CC(OC)=C1O KLIDCXVFHGNTTM-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- MMEDJBFVJUFIDD-UHFFFAOYSA-N 2-[2-(carboxymethyl)phenyl]acetic acid Chemical compound OC(=O)CC1=CC=CC=C1CC(O)=O MMEDJBFVJUFIDD-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- RXNYJUSEXLAVNQ-UHFFFAOYSA-N 4,4'-Dihydroxybenzophenone Chemical compound C1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1 RXNYJUSEXLAVNQ-UHFFFAOYSA-N 0.000 description 1
- URFNSYWAGGETFK-UHFFFAOYSA-N 4,4'-Dihydroxybibenzyl Chemical compound C1=CC(O)=CC=C1CCC1=CC=C(O)C=C1 URFNSYWAGGETFK-UHFFFAOYSA-N 0.000 description 1
- KLSLBUSXWBJMEC-UHFFFAOYSA-N 4-Propylphenol Chemical compound CCCC1=CC=C(O)C=C1 KLSLBUSXWBJMEC-UHFFFAOYSA-N 0.000 description 1
- XXHIPRDUAVCXHW-UHFFFAOYSA-N 4-[2-ethyl-1-(4-hydroxyphenyl)hexyl]phenol Chemical compound C=1C=C(O)C=CC=1C(C(CC)CCCC)C1=CC=C(O)C=C1 XXHIPRDUAVCXHW-UHFFFAOYSA-N 0.000 description 1
- JXYITCJMBRETQX-UHFFFAOYSA-N 4-ethynylaniline Chemical group NC1=CC=C(C#C)C=C1 JXYITCJMBRETQX-UHFFFAOYSA-N 0.000 description 1
- SKKKJNPBIGQNEJ-UHFFFAOYSA-N 9h-fluorene-1,9-diamine Chemical compound C1=CC(N)=C2C(N)C3=CC=CC=C3C2=C1 SKKKJNPBIGQNEJ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VOWWYDCFAISREI-UHFFFAOYSA-N Bisphenol AP Chemical compound C=1C=C(O)C=CC=1C(C=1C=CC(O)=CC=1)(C)C1=CC=CC=C1 VOWWYDCFAISREI-UHFFFAOYSA-N 0.000 description 1
- HTVITOHKHWFJKO-UHFFFAOYSA-N Bisphenol B Chemical compound C=1C=C(O)C=CC=1C(C)(CC)C1=CC=C(O)C=C1 HTVITOHKHWFJKO-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 1
- 239000013032 Hydrocarbon resin Substances 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical class CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- 235000014643 Orbignya martiana Nutrition 0.000 description 1
- 244000021150 Orbignya martiana Species 0.000 description 1
- JPYHHZQJCSQRJY-UHFFFAOYSA-N Phloroglucinol Natural products CCC=CCC=CCC=CCC=CCCCCC(=O)C1=C(O)C=C(O)C=C1O JPYHHZQJCSQRJY-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- AHZMUXQJTGRNHT-UHFFFAOYSA-N [4-[2-(4-cyanatophenyl)propan-2-yl]phenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1C(C)(C)C1=CC=C(OC#N)C=C1 AHZMUXQJTGRNHT-UHFFFAOYSA-N 0.000 description 1
- UAKNFLCLKRYKFO-UHFFFAOYSA-N acetylene aniline Chemical group C#C.NC=1C=CC=CC1 UAKNFLCLKRYKFO-UHFFFAOYSA-N 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- IMHDGJOMLMDPJN-UHFFFAOYSA-N biphenyl-2,2'-diol Chemical compound OC1=CC=CC=C1C1=CC=CC=C1O IMHDGJOMLMDPJN-UHFFFAOYSA-N 0.000 description 1
- WXNRYSGJLQFHBR-UHFFFAOYSA-N bis(2,4-dihydroxyphenyl)methanone Chemical compound OC1=CC(O)=CC=C1C(=O)C1=CC=C(O)C=C1O WXNRYSGJLQFHBR-UHFFFAOYSA-N 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 235000010338 boric acid Nutrition 0.000 description 1
- DLIJPAHLBJIQHE-UHFFFAOYSA-N butylphosphane Chemical compound CCCCP DLIJPAHLBJIQHE-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 235000019994 cava Nutrition 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000002734 clay mineral Substances 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- JAWGVVJVYSANRY-UHFFFAOYSA-N cobalt(3+) Chemical compound [Co+3] JAWGVVJVYSANRY-UHFFFAOYSA-N 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 239000011353 cycloaliphatic epoxy resin Substances 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 1
- 238000005695 dehalogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 239000008098 formaldehyde solution Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 229920006270 hydrocarbon resin Polymers 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000004698 iron complex Chemical class 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- MHERPFVRWOTBSF-UHFFFAOYSA-N methyl(phenyl)phosphane Chemical compound CPC1=CC=CC=C1 MHERPFVRWOTBSF-UHFFFAOYSA-N 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 150000004780 naphthols Chemical class 0.000 description 1
- 150000005002 naphthylamines Chemical class 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 239000010680 novolac-type phenolic resin Substances 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 150000002903 organophosphorus compounds Chemical class 0.000 description 1
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- QCDYQQDYXPDABM-UHFFFAOYSA-N phloroglucinol Chemical compound OC1=CC(O)=CC(O)=C1 QCDYQQDYXPDABM-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- KSBAEPSJVUENNK-UHFFFAOYSA-L tin(ii) 2-ethylhexanoate Chemical compound [Sn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O KSBAEPSJVUENNK-UHFFFAOYSA-L 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- 238000013191 viscoelastic testing Methods 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Landscapes
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
This invention provides an epoxy resin composition, which causes no significant warpage after molding in an area mounting-type semiconductor device and during solder treatment, causes no significant warpage in a low-temperature state, for example, in a temperature cycle test, and possesses excellent flame retardancy, solder cracking resistance, and fluidity, and a semiconductor device using the same. The epoxy resin composition for use in the semiconductor device comprises as indispensable components at least one epoxy resin (A) selected from trifunctional epoxy resins and tetrafunctional epoxy resins, a curing agent (B) containing at least two hydroxyl groups per molecule, a compound (C) containing at least two cyanate groups per molecule, and an inorganic filler (D).
Description
Technical field
The present invention relates to composition epoxy resin and semiconducter device, special, relate to the semiconducter device that the face that is applicable to is installed the composition epoxy resin of (area-mounted) semiconducter device and used said composition.
Background technology
Recently, need miniaturization, light-weighted high-performance electronic device on the market.Along with this trend, the packing density of semiconducter device improves year by year.In addition on the one hand, the surface mounting accelerated development of semiconducter device.Under these circumstances, face is installed semiconducter device and is arisen at the historic moment, and the structure of semiconducter device also by traditional structure to this structural development.Face installation semiconducter device is representative by the chip size packages semiconducter device (being designated hereinafter simply as " CSP ") of ball grid array (being designated hereinafter simply as " BGA ") and miniaturization more.These structures are developed to satisfy to the contact pin quantity that increases day by day and the requirement of high speed operation, and traditional surface mounting (surface-mounted) semiconducter device such as QFP and SOP etc. can not satisfy these and required.Face is installed semiconducter device and is had such structure: on a surface of the circuit card that is formed by bismaleimides-triazine (being designated hereinafter simply as " BT ") resin/Copper Foil semiconductor element is set, surface forming/the sealing of semiconductor element will be installed then, just, substrate has only a surface to have epoxy resin component.Arrive several millimeters because the resin-sealed layer thickness of going up formation in that surface of semiconductor element has been installed for the hundreds of micron, therefore a surface is fully sealing.Therefore, the deviation that causes owing to thermal expansion/thermal contraction between metal base and the composition epoxy resin solidifying product, the contraction that takes place in the time of perhaps composition epoxy resin moulding/solidified probably has influence at the bottom of the organic radical, thus warpage immediately after the moulding probably at the bottom of the organic radical that causes using in the semiconducter device.Semiconducter device is exposed in welding process under 230 ℃～260 ℃ the temperature, sometimes, for example when carrying out temperature cycling test, need be exposed to-55 ℃ low temperature.At this moment, when warpage degree aggravates, can damage distribution, cause loose contact or resin position crackle to occur.When crackle increases the weight of, can damage distribution.Many investigators study reducing warpage.For example, be cooled to warpage that normal temperature produces after the moulding and can reduce (for example, referring to TOHKEMY 2002-37863 communique) by the polyfunctional epoxy resin that uses second-order transition temperature to be set to the Resins, epoxy more than the mold temperature or to have a naphthalene skeleton structure with triphenyl skeleton structure.Yet, consider next base reservoir temperature to be elevated to the reflow soldering temperature that when substrate was exposed in 260 ℃ the atmosphere, warpage will be aggravated.In addition, in order to guarantee flame retardant resistance, can add for example aluminium hydroxide etc. of fire retardant usually, yet according to the difference of fire retardant type, the adding of fire retardant may be increased in the warpage under 260 ℃ especially.
Warpage particularly increases down significantly at 260 ℃, and this is because second-order transition temperature (being designated hereinafter simply as " Tg ") is low.More specifically be interpreted as, because the coefficient of linear expansion (being designated hereinafter simply as " α 2 ") of resin is in Tg temperature and above increase, the coefficient of expansion difference between substrate and the resin increases, and makes the warpage of semiconducter device increase.Therefore, urgent need will be developed a kind of novel semiconductor encapsulating epoxy resin, it has higher Tg, and keep low water absorbable simultaneously, have low α 2 values, excellent anti-weldering fragility in Tg and above temperature, and when keeping flame retardant resistance, have flowability, and between-55 ℃～260 ℃, show littler warpage.
The invention provides at face the composition epoxy resin that uses in the semiconducter device is installed, it is after moulding and welding process and during chilling process, for example show less warpage in the temperature cycling test, it has excellent flame, anti-weldering fragility and flowability, and the semiconducter device that uses above-mentioned composition epoxy resin is provided.The present invention further provides composition epoxy resin and with the semiconducter device of its preparation with excellent curing performance.
Summary of the invention
For achieving the above object, according to a first aspect of the invention, here the composition epoxy resin that provides has such feature, it comprises at least a Resins, epoxy (A) that is selected from trifunctional and the four-functional group epoxy resin, each molecule have at least two can with the solidifying agent (B) of the group of epoxy reaction, each molecule has the compound (C) of at least two cyanate groups, and mineral filler (D), as necessary component.
Aspect first, trifunctional Resins, epoxy can be represented with following structural formula (1):
Wherein a represents 0～10.
Aspect first, four-functional group epoxy resin can be represented with following structural formula (2):
Aspect first, each molecule has the compound (C) of at least two cyanate groups and can represent with following universal architecture formula (3):
Wherein, R
1～R
9Expression is selected from a kind of in hydrogen atom, methyl, ethyl, propyl group, butyl, hydroxyl, amino, phthalic acid, Tetra hydro Phthalic anhydride and the phenyl, and they can be the same or different, and b represents 0 to 10.
Aspect first, mineral filler (D) can be crystalline silica (crystalline silica) and/or glass flake.
Aspect first, glass flake can have from 10 to 40 aspect ratio.
Aspect first, each molecule has the solidifying agent (B) of at least two hydroxyls and can represent with following structural formula (4), (5) and/or (6):
Wherein c is 0 to 10.
Wherein d is 1 to 10.
Wherein e is 1～10.
Aspect first, mineral filler (D) can account for 65 weight % to 85 weight % of composition epoxy resin.
Aspect first, can also further comprise compound (E) with at least two benzoxazine rings.
Aspect first, each molecule of compound (E) with at least two benzoxazine rings can contain at least two carbon-to-carbon triple bonds.
Aspect first, can comprise at least a in zinc molybdate and the zinc borate as fire retardant (F).
Aspect first, mineral filler (D) and fire retardant (F) can account for 65 weight % to 85 weight % of composition epoxy resin.
Aspect first, can further comprise fire retardant (F).
Aspect first, fire retardant (F) can be at least a compound that is selected from zinc molybdate and zinc borate.
Aspect first, the content of mineral filler (D) and fire retardant (F) can account for 65% to 85% (weight ratio) of composition epoxy resin.
Aspect first, can further comprise curing accelerator (H) by at least a compound formation in the compound with phenolic hydroxyl group, metal complex and the metal oxide.
Aspect first, the compound with phenolic hydroxyl group can be dihydroxyphenyl propane, Bisphenol F or bisphenol S.
Aspect first, the atoms metal of metal complex and metal oxide can be Mn, Fe, Co, Ni, Cu, Zn, Al or Sn.
Aspect first, metal complex can be naphthenic acid (naphthenic acid) complex compound, sad complex compound, acetylacetonate complex or cyclopentadiene base complex.
Aspect first, composition epoxy resin can not surpass the twice of coefficient of linear expansion α 1 value below the second-order transition temperature in the value of second-order transition temperature or above coefficient of linear expansion α 2.
Aspect first, can further comprise curing accelerator (H) by following structural formula (7) expression:
Wherein P represents phosphorus atom; R
10, R
11, R
12And R
13Can be replace or unsubstituted aryl group or alkyl; A
1Be aromatic group, B
1Be singly-bound or the divalent substituent that is selected from ether, sulfuryl, sulfenyl and carbonyl, or contain the divalent substituent of 1 to 13 carbon atom; F is 0＜f＜1.
For achieving the above object, according to a second aspect of the invention, provide a kind of semiconducter device is installed, it has the substrate of semiconductor element only being installed and this surface having been carried out abundant sealing with composition epoxy resin on a surface, this face is installed semiconducter device and is had such feature, and composition epoxy resin is above-mentioned composition epoxy resin and further is cured under 230 ℃ at 190 ℃ after face is installed the semiconducter device moulding.
Preferred forms of the present invention
The present invention aims to provide and comprises at least a Resins, epoxy (A) that is selected from trifunctional and the four-functional group epoxy resin, each molecule have at least two can with the solidifying agent (B) of the group of epoxy reaction, each molecule has the compound (C) of at least two cyanate groups, and mineral filler (D) is as the composition epoxy resin of necessary component, and used the face installation semiconducter device of this composition epoxy resin after moulding He in the welding process, to show less warpage, perhaps at chilling process, infer that according to thermal shock test the warpage performance is excellent.
According to first embodiment, will describe composition epoxy resin in detail below.The example that is selected from least a Resins, epoxy (A) in trifunctional and the four-functional group epoxy resin generally comprises the epoxide group with at least two trifunctionals or monomer, oligopolymer and the polymkeric substance of four functional epoxide groups.Therefore molecular weight and molecular structure are not particularly limited.Concrete example can comprise the Resins, epoxy of bisphenol type, for example the Resins, epoxy of the Resins, epoxy of bisphenol A-type and Bisphenol F type; The Resins, epoxy that hydroxyl reaction by Epicholorohydrin and phenolic compound (as phenol, resol and naphthols etc.) makes, example comprises phenol type Resins, epoxy, Resorcinol type Resins, epoxy, dicyclopentadiene-type epoxy resin, the dihydroxy-benzene type Resins, epoxy of biphenyl type epoxy resin, biphenyl aralkyl Resins, epoxy, stilbene type Resins, epoxy, phenol phenol aldehyde type epoxy resin, cresols phenol aldehyde type epoxy resin, naphthalene type Resins, epoxy, tris-phenol type Resins, epoxy, terpene modification; The cycloaliphatic epoxy resin that alkene and mistake acid-respons obtain; Glycidyl ester type epoxy resin; And glycidyl amine type epoxy resin.These can use separately or the two or more use that combines.
Wherein, as Resins, epoxy (A), can be with in the naphthalene type four-functional group epoxy resin of trifunctional Resins, epoxy that mainly contains aforementioned chemical formula (1) expression and chemical formula (2) expression a kind of, perhaps can be with two kinds or above combination.These resins high second-order transition temperature is all arranged and the coefficient of linear expansion (being designated hereinafter simply as " α 2 ") that is not less than under the second-order transition temperature little.If second-order transition temperature is low, when semiconducter device was exposed to temperature more than the second-order transition temperature, the warpage of semiconducter device can increase.For this reason, used resin will have high as far as possible second-order transition temperature.Moreover when α 2 values were little, even more than second-order transition temperature, warpage degree was also low.
The trifunctional Resins, epoxy that can be used as Resins, epoxy (A) has more than those Resins, epoxy that are limited to chemical formula (1) expression.Have shown in the following surface chemistry formula (8) that the Resins, epoxy to the contributive naphthalene skeleton of flame retardant resistance is also included within the trifunctional Resins, epoxy that can be used as Resins, epoxy (A) between functional group.In addition, when the four-functional group epoxy resin of chemical formula (2) expression was selected as Resins, epoxy (A), this Resins, epoxy can use separately or combine use as Resins, epoxy (A) with other Resins, epoxy.More specifically describe, the Resins, epoxy that contains the expression of 5% to 20% chemical formula (2), the Resins, epoxy of 40% chemical formula (17) expression below 60%, and the blending epoxy of 30% Resins, epoxy that chemical formula (18) is represented below 50% can be used as Resins, epoxy (A).
Wherein g and h represent the polymerization degree, copolymerization ratio g: h (weight percent) is 50: 50 to 80: 20.
In addition, the unitary average repeat number of k representative ring epoxy resins in the chemical formula (13).Reference symbol k can and be in particular 1 to 5 for about 2 to 10.The unitary average repeat number of reference symbol a representative ring epoxy resins in the chemical formula (1) can be 0 to 10.Reference symbol k and a satisfy Resins, epoxy mobile better of above-mentioned scope.
Present embodiment will use per molecule have at least 2 can with the solidifying agent (B) of the group of epoxide group reaction solidifying agent as Resins, epoxy (A).Any compound can be used, as long as its per molecule contains at least 2 phenolic hydroxyl groups and amino.Yet, except the halogenide.
The example of solidifying agent (B) can comprise phenol resol, cresol novolac resin, bisphenol resin, phenol aralkyl resin, biphenyl aralkyl resin, tris-phenol type resol, xylylene resin modified phenol resin, terpene resin modified phenol resin, Dicyclopentadiene (DCPD) resin modified phenol resin, phenylenediamine, naphthylene diamine, fluorenediamine and triaminotriphenyl-carbinol.These can use separately or the two or more use that combines.
Wherein, for the warpage that reduces semiconducter device keeps flame retardant resistance simultaneously, especially, the resol of chemical formula (4) expression, the triaminotriphenyl-carbinol of chemical formula (14) expression, the phenol aralkyl resin of chemical formula (5) expression, and the biphenyl aralkyl resin of chemical formula (6) expression can use separately or two kinds and above being used in combination, as solidifying agent (B).When using other resin, flame retardant resistance reduces and α 2 value increases, can cause the warpage retarding effect to reduce.
Reference symbol c in the chemical formula (4) represents the unitary average repeat number of resol, can be 0 to 10.In addition, the reference symbol e in reference symbol d in the chemical formula (5) and the chemical formula (6) represents the unitary average repeat number of resol respectively, and the both can be 1 to 10, and is special, can be 1 to 5.At the reference symbol c that makes, d and e satisfy in the Resins, epoxy of above-mentioned scope, and mobile reduction can be stoped or suppress suitably.
The compound (C) that the per molecule that uses in the present embodiment contains two cyanate groups at least is not subjected to special restriction, as long as it contains two cyanate groups at least.Yet, for example, can obtain by halogen cyan based compound (halogenated cyan compound) and the reaction that contains the phenols of at least two phenolic hydroxyl groups.Wherein concrete example can comprise for example bisphenol A cyanate ester resin of bisphenol type cyanate ester resin, bisphenol E-type cyanate resin and tetramethyl-Bisphenol F type cyanate ester resin; With the phenol aldehyde type cyanate ester resin.Wherein, for reducing the value of α 2, can use phenol aldehyde type cyanate ester resin (novolac type cyanate resin).
As the phenol aldehyde type cyanate ester resin, can mention the compound of following general formula (3) expression.
R wherein
1～R
9Be selected from a kind of group in the group of being made up of expression hydrogen atom, methyl, ethyl, propyl group, butyl, hydroxyl, amino, phthalic acid, Tetra hydro Phthalic anhydride and phenyl separately, they can be the same or different.B represents 0～10.
Substituent R
1～R
9Represent hydrogen atom, methyl, ethyl, propyl group, butyl, hydroxyl, amino, phthalic acid, Tetra hydro Phthalic anhydride or phenyl separately.Wherein, can use hydrogen atom and methyl especially.This can reduce α 2 values under the second-order transition temperature and the warpage of semiconducter device.
The mineral filler that present embodiment is used (D) is not subjected to special restriction.For example, fused quartz, crystalline silica, talcum, aluminum oxide and silicon nitride can be mentioned.The spheric fused quartz is the most suitable.These mineral fillers can be used separately or two kinds and above being used in combination.In addition, the mineral filler of aspect ratio between 10 to 40, for example glass flake in the time of in being used in semiconducter device, can provide big warpage retarding effect and gratifying flame retardant properties.These can use separately or both and more than be used in combination.The example of the mineral filler of aspect ratio between 10 to 40 comprises for example clay of glass flake, glass fibre, mica and clay mineral.
Aspect ratio is defined as the ratio of mean diameter and mean thickness: mean diameter/mean thickness.
Mineral filler (D) can account for 65% to 85% (weight ratio) of composition epoxy resin.When content is lower than 65% or when being higher than 85%, warpage increases.
In addition, the median size of crystalline silica can be 1 μ m to 70 μ m.When crystalline silica has median size greater than 70 μ m, can not cast to such an extent as to flowability is too low.On the contrary, when median size less than 1 μ m the time, the viscosity of molten resin increases and mobilely significantly reduces.
In addition, special, median size can be 50 μ m or littler.
Composition epoxy resin moulding and under the high temperature more than the mold temperature, place a few hours so that its completely solidified.At this moment, gratifying condition can be to keep more than 175 ℃ more than 2 hours, and is special, keeps 4 to 12 hours at 190 ℃ to 230 ℃.When treatment temp raise, second-order transition temperature can further improve.Yet when separately resin being placed time more than 12 hours under temperature more than 230 ℃, second-order transition temperature can not continue to improve.
In embodiment, can add the use curing accelerator.Curing accelerator is not subjected to special qualification, as long as the crosslinking reaction between its energy intensifier ring epoxy resins and the resol.The example of curing accelerator can comprise, but is not limited to, and diazabicylo alkene and derivative thereof are (as 1,8-diazabicylo (5,4,0) hendecene-7), organophosphorus compound (as triphenylphosphine, tetraphenyl boric acid tetraphenylphosphoniphenolate) and imidazolium compounds (as glyoxal ethyline).These can use or mix use separately.Can quicken between cyanate ester resin and the Resins, epoxy catalyst for reaction such as acetylacetone cobalt and cobalt naphthenate can use together.Catalyzer has more than and is limited to these.
In embodiment, can use the curing accelerator (H) shown in the general formula (7) as described above, it is for replacing the supramolecule (assembly ofmolecules) that forms between De Phosphonium and the phenolic compound four.Curing accelerator (H) is formed by four independent Qu Dai phosphonium cations with by the anionic units that 1 to 3 phenolic hydroxyl group and independent phenol oxygen anion form.Can expect that curing accelerator (H) has a stable structure, because four Qu Dai Phosphonium ions of a positively charged are surrounded by 1 to 3 phenolic hydroxyl group and single phenol oxygen anion.
Have that the Phosphonium ion of this spline structure can have a replacement for use or unsubstituted aryl group or alkyl are got for the Phosphonium ion as four of substituted radical, because it is thermally-stabilised and hydrolysis-stable.R
10～R
13Example can comprise the various isomeric forms of following group: benzyl, methyl, ethyl, normal-butyl, n-octyl, cyclohexyl, naphthyl, to uncle's phenyl, 2,6-dimethoxy phenyl, phenyl and tolyl; The various isomeric forms of methoxyphenyl; Various isomeric forms with hydroxyphenyl.The example of four phosphonium cations that replace can comprise the Phosphonium (for example tetraphenylphosphoniphenolate and tetramethyl phenyl Phosphonium) that four aryl replace; The triaryl list alkane base Phosphonium (as three phenyl methyl Phosphonium) that triaryl phosphine and alkyl halide hydrocarbon reaction are obtained; And tetraalkyl replaces De Phosphonium such as 4-butyl-phosphonium.
In addition, be included in the phenolic hydroxyl group of formation curing accelerator (H) and the A in the phenol oxygen anion
1Has aromatic group (as phenyl, naphthalene or anthraquinone); B
1Have methyl, ethyl, propyl group, ether, sulfuryl, sulfide group (sulfide group) or carbonyl group.A
1-B
1-A
1The example of the phenolic compound of expression comprises that bis-phenol is (as dihydroxyphenyl propane (2, two (4-hydroxy phenyl) propane of 2-), Bisphenol F (4,4 '-methylene radical bis-phenol, 2,4 '-methylene radical bis-phenol, 2,2-methylene radical bis-phenol), two (4-hydroxy phenyl) sulfones (bisphenol S), bis-phenol E (4,4 '-ethylenebis phenol), bisphenol fluorene (4,4 '-(9H-fluorenes-9-subunit) bis-phenol), 4,4 '-methylene-bis (2, the 6-xylenol) and two (4-hydroxy phenyl) ketone; 4,4 '-bis-phenol, 2,2 '-bis-phenol; 3,3 ', 5,5 '-the tetramethyl-bis-phenol); With 2,2-two (4-hydroxy phenyl).Physical properties in view of the stability of molecular compound and solidified nature, solidifying product, dihydroxyphenyl propane, Bisphenol F (comprise 4,4 '-methylene radical bis-phenol, 2,4 '-methylene radical bis-phenol and 2,2 '-methylene radical bis-phenol and their isomer mixture for example the procreative Bisphenol F of Honshu chemical industry strain formula-D), bisphenol S, 4,4 '-bis-phenol and 2,2-two (4-hydroxy phenyl) can use.
Curing accelerator (H) can be synthetic by the method that comprises the steps: with above-mentioned phenolic compound and final alkali of assisting dehalogenation (alkali metal hydroxide for example, as sodium hydroxide and potassium hydroxide, or organic bases, as pyridine or triethylamine) be dissolved in the solvent (as alcohol), add the above-mentioned four Qu Dai Phosphonium halogenide that are dissolved in the appropriate solvent subsequently, make their reactions, reclaim with solid matter by operations such as recrystallization or redeposition at last, perhaps also can carry out thermal response to four substituted boracic acids, four Qu Dai Phosphonium and phenolic compound, and then in solvent (as alcohol), carry out thermal response.
Curing accelerator (H) has Qian Shu Phosphonium-phenol type salt structure, and this is with Chuan Tong De Phosphonium-organic anion salt structure difference.In curing accelerator (H), participate in higher order structure that hydrogen bond obtains by the proton of phenolic hydroxyl group and be centered around around the ionic linkage.In traditional salt, the reactive control that only is subjected to ionic linkage intensity, and in curing accelerator (H), because the active centre ion pair is surrounded by higher order structure, chain carrier has obtained protection when normal temperature.Yet in actual forming step, higher order structure caves in and exposes the active centre, thereby has started reaction.Perhaps in other words, given potential reaction.Because the potential reactivity can be taken into account good flowability and enough abilities to cure.
In addition, in embodiment, if necessary, fire retardant (F) (as zinc molybdate and zinc borate), coupling agent, releasing agent (as natural wax or synthetic wax), tinting material (as carbon black) suitably can be mixed.
Composition epoxy resin is by each component being mixed, mediating when heating malaxator or warming mill heated mixt, cools off then and pulverize to be prepared from.
Semiconducter device can seal semiconductor element by the composition epoxy resin with present embodiment, and is cured and makes with traditional forming method (as transfer molding, compressed moulding or injection moulding etc.).
To describe the composition epoxy resin of second embodiment below in detail according to the present invention.
Should be noted that, be included in each component and first embodiment in the composition epoxy resin identically, therefore, omit explanation accordingly.
The fire retardant that will use in this embodiment (F), can be at least a compound that is selected from zinc molybdate (F-1) and the zinc borate (F-2), it has flame retardant resistance and can produce the warpage retarding effect at high temperature (particularly second-order transition temperature or more than).Zinc molybdate (F-1) and zinc borate (F-2) particle diameter are big more, and flame retardant resistance is low more.Median size can be 1 μ m to 70 μ m, is in particular 5 μ m to 50 μ m.
The content of mineral filler (D), zinc molybdate (F-1) and zinc borate (F-2) can account for 65% to 85% (weight ratio) of composition epoxy resin.Be lower than 65% and be higher than under 85% two kind of situation, warpage all can increase.
After the composition epoxy resin moulding, the product of moulding is placed on mold temperature or higher following a few hours of temperature separately, so that its completely solidified.The condition in this time can be 175 ℃ or above maintenance 2 hours or more than, special, kept 4 to 12 hours at 190 ℃ to 230 ℃.Second-order transition temperature can further improve by the rising processing temperature.Even separately resin is placed 12 hours and above time under 230 ℃ and above temperature, second-order transition temperature can not continue to improve.
If necessary, the composition epoxy resin of present embodiment may further include curing accelerator (G).The example of curing accelerator (G) can comprise at least a compound that is selected from compound, metal complex and the metal oxide with phenolic hydroxyl group.Wherein concrete example can comprise phenolic compound (as phenol, dihydroxyphenyl propane, Bisphenol F, bisphenol S, nonyl phenol and phenol phenolic aldehyde (phenol novolac)); Comprise metal complex and metal oxide, wherein, can use aluminium complex, cobalt complex, tin complex or iron complex as atoms metals such as Mn, Fe, Co, Ni, Cu, Zn, Al or Sn.Especially, can use metal complex, for example zinc naphthenate, cobalt naphthenate, stannous octoate, cobalt octoate, bis-acetylacetonate are closed cobalt (II), praseodynium closes cobalt (III), ferrocene, acetyl acetone cobalt; And metal oxide, as aluminum oxide.The content of curing accelerator (G) can suitably be selected according to ability to cure.These catalyzer can two kinds or above collocation get up to use.Wherein, can use the combination of bisphenol S and aluminium complex and the combination of bisphenol S and cobalt complex.
In addition, above-mentioned curing accelerator also can use in the present embodiment.As long as the crosslinking reaction between energy intensifier ring epoxy resins and the cyanate can be used any curing accelerator.Example wherein can include, but not limited to diazabicylo alkene and derivative thereof as 1,8-diazabicylo (5,4,0) hendecene-7 and imidazolium compounds such as glyoxal ethyline.These can separately or mix use.
In addition, in the present embodiment, if necessary, can suitably mix coupling agent, releasing agent (as natural wax or synthetic wax), tinting material (as carbon black) etc.
To describe the composition epoxy resin of the 3rd embodiment below in detail according to the present invention.
Should be noted that be included in each component and first and second embodiment in the composition epoxy resin identically, therefore, corresponding explanation will be omitted.
The compound that contains at least two benzoxazine rings (E) that to use among the present invention can be by obtaining aminated compounds, the compound with phenolic hydroxyl group group and formaldehyde solvent being arranged or do not have to react under the situation of solvent.The example of aminated compounds can comprise aniline, methylamine, ethamine, Tri N-Propyl Amine, Isopropylamine, hexahydroaniline, Tolylamine, amino naphthalenes, amino anthracene, amino-benzene acetylene, amino naphthalenes acetylene, amino anthracene acetylene, aminophenyl propargyl ether, ammonia naphthyl propargyl ether, ammonia anthryl propargyl ether.Amino-benzene acetylene, amino naphthalenes acetylene, amino anthracene acetylene, aminophenyl propargyl ether, ammonia naphthyl propargyl ether, ammonia anthryl propargyl ether are to contain the substituent primary amine of at least one carbon carbon triple bond.
Examples of compounds with phenolic hydroxyl group group can comprise dihydroxyphenyl propane, Bisphenol F, bisphenol S, 4,4 '-(1-methyl propylidene) bis-phenol, 4,4 '-(1,3 '-the dimethyl butylidene) bis-phenol, 4,4 '-(2-ethyl hexylidene) bis-phenol, 4,4 '-methylene radical bis-phenol, 4 '-[1,4-phenylene two (1-methyl ethylidene)] bis-phenol, 4,4 '-ring penta subunit bis-phenol, 4,4 '-ring caproic subunit bis-phenol, 4,4 '-(1-phenyl ethylidene) bis-phenol, 4,4 '-dihydroxybiphenyl; Novolac type phenolic resin; Hydrocarbon resin modified phenol resin, triphenylamine, 4,4 '-dihydroxy benaophenonel, 2,4 '-dihydroxy benaophenonel, 2,4,4 '-trihydroxybenzophenone, 2,2 ', 4,4 '-tetrahydroxybenzophenone, monohydroxy naphthalene, dihydroxy naphthlene, dihydroxy-benzene and trihydroxybenzene.
The example of formaldehyde can comprise formalin (formalin) and polymkeric substance (as Paraformaldehyde 96), acetaldehyde and phenyl aldehyde etc.
The example of solution can comprise methylethylketone, toluene, 1-propyl alcohol, 2-propyl alcohol, 1-butanols, 1,4-diox, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether and ethylene glycol monobutyl ether.These solvents can use or mix use separately.
The example of the compound that contains at least two benzoxazine rings (E) that obtains from these (compounds) can comprise the compound by using following compounds to obtain: as aniline, naphthylamines, anthranylamine, m-aminophenyl acetylene, p-aminophenyl acetylene, amino naphthalenes acetylene, the amino anthracene acetylene of aminated compounds; As 1 of the compound with phenolic hydroxyl group group, 4-dihydroxy-benzene (Resorcinol), 1,3,5-trihydroxybenzene, dihydroxy naphthlene, 4,4 '-dihydroxybiphenyl, 4,4 '-dihydroxy benaophenonel, dihydroxyphenyl propane, Bisphenol F, bisphenol S or tritane; And as the formalin or the Paraformaldehyde 96 of formaldehyde.
The compound that contains at least two benzoxazine rings (E) that will use in invention can be by with amine compound (1mol), formaldehyde (2mol) and contain phenolic hydroxyl group (1mol) reaction of phenolic hydroxyl group compound, under the situation of having used solvent after reaction is finished with the solvent evaporate to dryness, if necessary use neutralizing treatment, remove unreacted component then and obtain.
Further, in embodiment, if necessary, can suitably mix fire retardant (as brominated epoxy resin and antimonous oxide), coupling agent, releasing agent (as natural wax or synthetic wax), tinting material (as carbon black) except that zinc molybdate and zinc borate.
Embodiment
To introduce example below in detail according to the composition epoxy resin of first embodiment of the invention.Yet embodiment has more than and is limited to these, and the unit of component calculates by weight.
(embodiment 1-1)
Prepare following component:
As Resins, epoxy: the Resins, epoxy of biphenyl type (A-1) (YX 4000H, japan epoxy resin (strain) system, fusing point: 105 ℃, epoxide equivalent: 193) mainly comprise the compound of following molecular formula (12) expression;
As solidifying agent: the solidifying agent (B-1) (MEH7500, bright and change into (strain) system, softening temperature: 110 ℃, hydroxyl equivalent: 97, the value of noting number of repeat unit c is zero) that mainly comprises component shown in the molecular formula (4);
The compound that has at least two cyanate groups as each molecule: the phenol aldehyde type cyanate ester resin (C-1) of following molecular formula (9) expression (CT-90, Long Sha Group Co.,Ltd system, fusing point: 65 ℃, notice that the mean value of number of repeat unit i is 3);
As mineral filler: crystalline silica (D-1) (median size: 42 μ m, particle diameter accounts for weight ratio 90.4% at the particle of 30 μ m to 60 μ m);
As curing accelerator 1: imidazoles (2MPZ, four countries change into industry (strain) system);
As curing accelerator 2: acetyl acetone cobalt (Northeast chemistry (strain) system);
As other additives, releasing agent: carnauba wax (daylight babassu (trade(brand)name), daylight elaboration company limited system); Tinting material: carbon black (Carbon#5 (trade(brand)name), Mitsubishi Chemical's (strain) system), and coupling agent (intelligence rope (strain) system GPS-M).
These components are mixed according to the content shown in following:
The Resins, epoxy of biphenyl type (A-1) 9.0 weight parts
Solidifying agent (B-1) 4.5 weight parts
Phenol aldehyde type cyanate ester resin (C-1) 5.8 weight parts
Crystalline silica (D-1) 80.0 weight parts
Curing accelerator 1 (imidazoles) 0.15 weight part
Curing accelerator 2 (acetyl acetone cobalt) 0.15 weight part
Releasing agent (carnauba wax) 0.2 weight part
Tinting material (carbon black) 0.1 weight part
Coupling agent (GPS-M) 0.1 weight part
Notice that the median size of crystalline silica used herein (D-1) is by the laser diffraction formula particle size distribution survey meter SALD-7000 of day island proper Tianjin company manufacturing (optical maser wavelength: 405nm) obtain.
Aforementioned component is mixed at normal temperature by mixing tank, carries out kneading with warming mill at 70 ℃ to 120 ℃, and cooling is also pulverized to obtain composition epoxy resin.The composition epoxy resin that is obtained is estimated in the following method, and evaluation result is shown in table 1.
Evaluation method:
1. helical flow: carry out the helical flow test with reference to the EMMI-1-66 method with mould, test condition is: 175 ℃ of die temperatures, transmit pressure, 6.9MPa, set time: 2 minutes.The unit that uses is centimetre.
2. coefficient of linear expansion α 1 (50 ℃ to 70 ℃ coefficient of linear expansion), coefficient of linear expansion α 2 (230 ℃ to 250 ℃ coefficient of linear expansion): composition epoxy resin is with the moulding of low pressure transfer molding machine, and die temperature is 175 ℃, transmits pressure 7.4 * 10
6Pa, 120 seconds set times are to obtain test block.Test block is in after fixing process of 4 hours experience of 175 ℃ of heating.The value of factor alpha 1 and α 2 uses thermomechanical analyzer (TMA-120, Seiko electronic component company limited system, 5 ℃/minute of heat-up rates) to record.
3. the test of second-order transition temperature (Tg): composition epoxy resin low pressure transfer molding machine moulding, die temperature is 175 ℃, transmits pressure 7.4 * 10
6Pa, 120 seconds set times are to obtain test block (wide 2mm * long 30mm * thick 1.0mm).Test block is in after fixing process of 4 hours experience of 175 ℃ of heating.Dynamic viscoelastic carries out the dynamic viscoelastic test with the frequency distortion that dynamic mechanical spectroscope (DMS6100, Seiko instrument system) is used 10Hz with the heat-up rate of 5 ℃/min.Peak value based on tan δ can obtain second-order transition temperature (Tg).
4. packaged piece amount of warpage: go up silicon (size: 15 * 15mm, a thickness: 0.73mm) are installed at a circuit card (ELC-4785GS dual platen, core size 43 * 43mm, Sumitomo bakelite (strain) system).Fill this structure with underfill (CRP-4152, Sumitomo bakelite (strain) system).Composition epoxy resin transfer molding machine moulding, die temperature is 180 ℃, transmits pressure 7.4MPa, two minutes set times are to obtain packaged piece (packaged piece size: 43 * 43mm).Packaged piece is in 175 ℃ of heating 4 hours and after fixing process of 4 hours experience of 200 ℃ of heating.Behind the packaged piece cool to room temperature, amount of warpage is determined with the displacement of shadow grid moire systems (shadow moir é system) (PS-200, Acrometrix corporate system) warpage tester test height direction.The difference of maximum displacement is defined as amount of warpage.Test (55 ℃, 25 ℃, 150 ℃ and 260 ℃) under four different temperature is carried out.Measure temperature at each, amount of warpage is 200 μ m or followingly represents with ◎, and 400 μ m or following usefulness zero represents, 600 μ m or followingly represent 800 μ m or following usefulness * expression with △.
5. anti-weldering fragility: to the moulding that is used for packaged piece amount of warpage test and carried out the after fixing process and handled (175 ℃, 4 hours) 8 packaged pieces, according to JEDEC level 3, in relative humidity is 60%, 60 ℃ of temperature were handled 168 hours down, carried out the IR reflow treatment under the JEDEC condition of 235 ℃ of top temperatures then.After finishing dealing with, observe each packaged piece inside have or not peeling off and break with ultrasonic reflectoscope.Defective packaged piece quantity is calculated.Defective encapsulation number of packages n represents with n/8 with the ratio of 8 encapsulation numbers of packages.
6. thermal shock test: the identical packaged piece (10 packaged pieces) used in the anti-weldering fragility test 125 ℃ of dryings 24 hours, then according to JEDEC level 3, was placed on separately in the container of 60 ℃ of constant humidity of constant temperature (relative humidity) 60% 40 hours.Then, 10 packaged pieces are placed in the IR reflow ovens (in nitrogen gas stream) three times, are loaded in the equipment (thermal shocking chamber TSA-101S, ESPEC corporate system) again, and ℃ container is replaced by 125 ℃ container immediately therein-55.Packaged piece was handled 30 minutes in 125 ℃ container, and ℃ processing is 30 minutes then-55.This circulation repeats 1000 times.After this, observe peeling off and break of each packaged piece inside with ultrasonic reflectoscope.Defective encapsulation number of packages n represents with n/10 with the ratio of 10 encapsulation numbers of packages.
7. flame retardant resistance: composition epoxy resin is with the moulding under the following conditions of transfer molding machine: 175 ℃ of die temperatures, transmit pressure 6.86MPa (70kgf/cm
2), 120 seconds set times are to obtain test block.Test block is in after fixing process of 4 hours experience of 175 ℃ of heating, so obtain the flame retardant resistance specimen.Use the thick flame retardant resistance specimen of 3.0mm, record ∑ F and Fmax according to the UL94 standard.V-0, V-1, V-2 and non-standardly also record by this way.
(embodiment 1-2 to 1-7)
Component except that using in embodiment 1-1 is as follows:
As Resins, epoxy:
Mainly comprise the compound of aforementioned chemical formula (13) expression biphenyl aralkyl type Resins, epoxy (A-2) (NC-3000P, Japanese chemical drug (strain) system, softening temperature: 60 ℃, epoxy equivalent (weight): 272),
The Resins, epoxy (A-3) (E-1032H60, japan epoxy resin (strain) system, fusing point: 56 ℃, epoxy equivalent (weight): 171, notice that number of repeat unit a is 0) that mainly comprises the compound of aforementioned chemical formula (1) expression,
Mainly comprise the compound of aforementioned chemical formula (2) expression naphthalene type four-functional group epoxy resin (A-4) (HP4770, Dai Nippon Printing's (strain) system, epoxy equivalent (weight): 141), perhaps
Naphthol novolak type Resins, epoxy (A-5) (ESN-375, Nippon Steel's chemistry (strain) system, epoxy equivalent (weight): 173) by following chemical formula (10) expression;
As solidifying agent:
The solidifying agent (B-2) (triaminotriphenyl-carbinol, Northeast chemistry (strain) system, the NH that mainly contain the component of chemical formula (14) expression
2Equivalent: 101),
The phenol aralkyl resin (B-3) (XL-225, Mitsui Chemicals (strain) system, hydroxyl equivalent: 172, softening temperature: 77 ℃, notice that average number of repeat unit d is 3) that mainly contains the compound of chemical formula (5) expression, perhaps
The biphenyl aralkyl type Resins, epoxy (B-4) (MEH-7851ss, bright and change into (strain) system, hydroxyl equivalent: 199, softening temperature: 68 ℃, notice that average number of repeat unit e is 3) that mainly contains the compound of chemical formula (6) expression;
At least the compound that contains two cyanate groups as each molecule: by the cyanate ester resin (C-2) (PT-60, Long Sha Group Co.,Ltd system notice that average number of repeat unit j is 3) of following chemical formula (11) expression;
As mineral filler:
Glass flake (D-2) (RCF140A, NHTechno (strain) system, aspect ratio: 28, median size: 45 μ m),
The microwool (D-3) that forms by glass fibre (CMLF 109, NHTechno (strain) system, and aspect ratio: 35, median size: 70 μ m), or
Spherical fused quartz (D-4) (median size: 15 μ m).
Above component is mixed according to content shown in the table 1, and use with embodiment 1-1 in same mode mediate, prepare composition epoxy resin, estimate then.
(embodiment 1-8)
Prepare following component:
As Resins, epoxy: the Resins, epoxy (A-3) that mainly contains compound shown in the chemical formula (1);
As solidifying agent: the solidifying agent (B-1) that mainly contains compound shown in the chemical formula (4);
At least the compound that contains two cyanate groups as each molecule: the phenol aldehyde type cyanate ester resin (C-1) of chemical formula (9) expression;
As curing accelerator: with hereinafter described method synthetic by general formula (7) expression by four curing accelerators (H-1) that replace the supramolecule (assembly of molecules) that De Phosphonium and phenolic compound form;
As mineral filler: aforementioned crystalline silica (D-1) and spherical fused quartz (D-4);
As other additives, releasing agent: aforementioned carnauba wax; Tinting material: aforementioned carbon black and aforementioned coupling agent.
[the synthetic example of curing accelerator (H)]
The structure of synthetic curing accelerator (H) is confirmed with nucleus magnetic resonance, ultimate analysis and neutralization titration (titration is based on phosphine phenol (phosphonium phenoxide) equivalent) according to following method.Synthetic curing accelerator (H) in the methanol series solvent with the excessive oxalic acid reaction of known weight.Remaining oxalic acid amount is with known centinormal 1 aqueous sodium hydroxide solution titration determination.So, the equivalent (N/g) of the unit weight of curing accelerator (H) just can calculate.The inverse of this value equals phosphine phenol equivalent.
[curing accelerator (H-1)]
Put into Japanese system BPS-N of Nicca Chemical Co., Ltd (mainly contain 4,4 '-bisphenol S) and the 100ml methyl alcohol of 75.0g (0.3mol) in the divided flask of 1L with agitator.Stir under the room temperature and make the mixture dissolving.Further stir the mixture and the 50ml methanol solution of 4.0g (0.1mol) sodium hydroxide that added the good dissolving of prepared beforehand the 150ml methanol solution of 41.9g (0.1mol) 4-phenyl phosphonium bromide that added the good dissolving of prepared beforehand subsequently.Continuously stirring mixture for some time, add 300ml methyl alcohol again.After this, will dropwise be added under the solution stirring in the flask in the big water gaging to obtain white depositions.Filter out precipitation and drying and can get the 66.0g white crystal.White crystal carries out analyzing and testing with nucleus magnetic resonance, mass spectrum and ultimate analysis.The result determine curing accelerator (H-1) be tetraphenylphosphoniphenolate (1 molecule) and 4,4 '-complex compound that bisphenol S forms according to mol ratio 1: 1.5.In addition, based on the value of neutralization titration, the normal measured value of phosphine phenol is 728, near theoretical value 713.According to this result, can confirm that curing accelerator (H-1) has the structure shown in the general formula (7).The synthetic productive rate is 92.6%.
In embodiment 1-8, except that embodiment 1-1 use in the embodiment 1-7 component be curing accelerator (H-1).The component for preparing is above mixed according to content shown in the table 1, and use with embodiment 1-1 in same mode mediate, prepare composition epoxy resin, estimate then.
(comparative example 1-1 and 1-2)
In comparative example 1-1, except that not using cyanate ester resin, identical among used component and the embodiment 1-1.In comparative example 1-2, remove do not use resin of phenolic cyanate (C-1) and with aluminium hydroxide (CL-303, Sumitomo Chemical (strain) is made) as outside the fire retardant, identical among used component and the embodiment 1-1.Component is mixed according to content shown in the table 1.Comparative example 1-1 and 1-2, use with embodiment 1-1 in identical mode mediate and prepare composition epoxy resin, estimate then.
The result
About warpage and flame retardant resistance, in embodiment 1-1～1-8, obtained good result.In comparative example 1-1, warpage is very big and flame retardant resistance is not enough.Use aluminium hydroxide as fire retardant in comparative example 1-2, flame retardant resistance is guaranteed, but warpage has increased.
[table 1]
In the composition epoxy resin of above-mentioned embodiment, flame retardant resistance has obtained maintenance, and has obtained excellent warpage inhibition.Owing to have outstanding especially thermal shock resistance, the face that composition epoxy resin can be applied on the automobile is effectively installed in the semiconducter device.
Next, will introduce composition epoxy resin in detail in the mode of embodiment below according to second embodiment of the invention.Yet embodiment has more than and is limited to these, and the unit of component calculates by weight.
(embodiment 2-1)
Prepare following component:
As Resins, epoxy: biphenyl type epoxy resin (A-1) (YX 4000H, japan epoxy resin company limited system, fusing point: 105 ℃, epoxy equivalent (weight): 193) mainly comprise the compound of aforementioned molecular formula (12) expression.
At least the compound that contains two cyanate groups as each molecule: by cyanate ester resin (the C-1) (CT-90 of the phenol aldehyde type of aforementioned molecular formula (9) expression, Long Sha Group Co.,Ltd (Lonza GroupLtd.), fusing point: 65 ℃, notice that average number of repeat unit i is 3);
As mineral filler: zinc molybdate (F-1);
As curing accelerator: bisphenol S (G-1) (four countries change into industry (strain) system) and acetyl acetone cobalt (G-5) (Northeast chemistry (strain) system);
As other additives, releasing agent: carnauba wax; Tinting material: carbon black, and coupling agent (GPS-M, intelligence rope (strain) system).
These components are mixed according to the content shown in following:
The Resins, epoxy of biphenyl type (A-1) 9.2 weight parts
Phenol aldehyde type cyanate ester resin (C-1) 10.0 weight parts
Crystalline silica (D-1) 75.0 weight parts
Zinc molybdate (F-1) 5.0 weight parts
Curing accelerator (G-1) (bisphenol S) 0.2 weight part
Curing accelerator (G-5) (acetyl acetone cobalt) 0.2 weight part
Releasing agent (carnauba wax) 0.2 weight part
Tinting material (carbon black) 0.1 weight part
Coupling agent (GPS-M) 0.1 weight part
Notice that the median size of crystalline silica used herein (D-1) is by the laser diffraction formula particle size distribution survey meter SALD-7000 of day island proper Tianjin company manufacturing (optical maser wavelength: 405nm) obtain.
Aforementioned component is mixed at normal temperature by mixing tank, carries out kneading with warming mill at 70 ℃ to 120 ℃, and cooling is also pulverized to obtain composition epoxy resin.The composition epoxy resin that is obtained is estimated in the following method, and evaluation result is shown in table 2.
Evaluation method
1. torque ratio
Use curastmeter (JSR curastmeter type IVPS, Japanese orientec Co., Ltd. system), torque value was tested in beginning under the following conditions after the heating in 90 seconds and 300 seconds: mode diameter: 35mm, and the amplitude angle: 1 ℃, die temperature: 175 ℃.Calculate torque ratio then, just (90 seconds torque value after the heating beginning)/(300 seconds torque value after the heating beginning).The torque ratio that obtains with curastmeter is used as the parameter of ability to cure.Torque ratio is big more, and ability to cure is good more.
(embodiment 2-2～2-7)
Component except that using in embodiment 2-1 is as follows:
As Resins, epoxy:
Mainly contain the biphenyl aralkyl type of compound shown in the aforementioned chemical formula (13) Resins, epoxy (A-2) (NC-3000P, Japanese chemical drug (strain) system, softening temperature: 60 ℃, epoxy equivalent (weight): 272),
The Resins, epoxy (A-3) (E-1032H60, japan epoxy resin (strain) system, fusing point: 56 ℃, epoxy equivalent (weight): 171, notice that number of repeat unit a is 0) that mainly comprises the compound of aforementioned chemical formula (1) expression,
Mainly comprise the compound of aforementioned chemical formula (2) expression naphthalene type four-functional group epoxy resin (A-4) (HP4770, Dai Nippon Printing's (strain) system, epoxy equivalent (weight): 141), perhaps
Naphthol novolak type Resins, epoxy (A-5) (ESN-375, Nippon Steel's chemistry (strain) system, epoxy equivalent (weight): 173) by following chemical formula (10) expression;
At least the compound that contains two cyanate groups as each molecule: by the cyanate ester resin (C-2) (PT-60, Long Sha Group Co.,Ltd system notice that average number of repeat unit j is 3) of following chemical formula (11) expression;
As mineral filler:
Glass flake (D-2) (RCF140A, NHTechno (strain) system, aspect ratio: 28, median size: 45 μ m), perhaps
The microwool (D-3) that forms by glass fibre (CMLF 109, NHTechno (strain) system, and aspect ratio: 35, median size: 70 μ m);
As fire retardant, zinc borate (F-2); As curing accelerator, Bisphenol F (G-2) and methyl ethyl diketone (G-4) (Northeast chemistry (strain) system), cobalt naphthenate (G-3) (Northeast chemistry (strain) system), ferrocene (G-6) (Dicyclopentadiene (DCPD) closes iron) (Northeast chemistry (strain) system), and aluminum oxide (G-7) (Northeast chemistry (strain) system).
Above component is mixed according to content shown in the table 2, and use with embodiment 2-1 in same mode mediate, prepare composition epoxy resin, estimate then.
(comparative example 2-1 and 2-2)
In comparative example 2-1, except that not using fire retardant, identical among used component and the embodiment 1-1.In comparative example 2-2, except that not with fire retardant and used spherical fused quartz (D-4) (median size: 15 μ m), identical among used component and the embodiment 2-1.Component is mixed according to content shown in the table 2.Comparative example 2-1 and 2-2, use with embodiment 2-1 in identical mode mediate and prepare composition epoxy resin, estimate then.
[table 2]
In the composition epoxy resin of above-mentioned embodiment and first embodiment, flame retardant resistance has obtained maintenance, and has obtained perfect warpage inhibition.Owing to have outstanding especially thermal shock resistance, the face that composition epoxy resin can be applied on the automobile is effectively installed in the semiconducter device.
Next, will introduce composition epoxy resin in detail in the mode of embodiment below according to third embodiment of the invention.Yet embodiment has more than and is limited to these, and the unit of component calculates by weight.
[synthetic embodiment] with compound (E) of at least two benzoxazine rings
The synthetic method of describing with reference to Polymer 40 (1999) pp.1815-1822 with compound (E) of at least two benzoxazine rings.To introduce synthetic embodiment below; Yet the synthetic method must not be only limited to the temperature of reaction and the reaction times of describing in this method and the document.
[compound (E-1)] with at least two benzoxazine rings
Put into aniline and the 150ml diox of 71.7g (0.77mol) in the flask of 0.5L, stir under the room temperature and make the mixture dissolving.Then, dropwise add 37.3g formaldehyde solution (36～38% the aqueous solution), reaction is 2 hours under the room temperature.Thereafter, add 71.5g (0.38mol) 4,4 '-dihydroxybiphenyl stirs down 100～110 ℃ of reactions 6 hours.After reaction is finished, sedimentation and filtration come out and in 95 ℃ vacuum drier dry 8 hours, obtain 148g and comprise compound (E-1) by following chemical formula (15) expression with at least two benzoxazine rings.
[compound (E-2)] with at least two benzoxazine rings
Step is substantially the same with synthetic compound (E-1) with at least two benzoxazine rings, just will change 90g (0.77mol) m-aminophenyl acetylene at the aniline of the 71.7g in the synthesis step of the compound with at least two benzoxazine rings (E-1) (0.77mol) into.Therefore, the compound with at least two benzoxazine rings (E-2) of molecular formula (16) expression below the acquisition 143g.
(embodiment 3-1)
Prepare following component:
As Resins, epoxy: the Resins, epoxy of biphenyl type (A-1) (YX 4000H, japan epoxy resin (strain) system, fusing point: 105 ℃, epoxide equivalent: 193) mainly comprise the compound of aforementioned molecular formula (12) expression;
As solidifying agent:
The solidifying agent (B-1) (MEH7500, bright and change into (strain) system, softening temperature: 110 ℃, hydroxyl equivalent: 97, the value of noting number of repeat unit c is zero) that mainly comprises component shown in the molecular formula (4);
The compound that has at least two cyanate groups as each molecule: the phenol aldehyde type cyanate ester resin (C-1) of aforementioned molecular formula (9) expression (CT-90, Long Sha Group Co.,Ltd system, fusing point: 65 ℃, notice that the mean value of number of repeat unit i is 3);
Aforementioned compound (E-1) with at least two benzoxazine rings;
Crystalline silica (D-1) (median size: 42 μ m, particle diameter accounts for weight ratio 90.4% at the particle of 30 μ m～60 μ m);
As curing accelerator 1: imidazoles (2MPZ, four countries change into industry (strain) system);
As curing accelerator 2: acetyl acetone cobalt (Northeast chemistry (strain) system);
As other additives, releasing agent: carnauba wax; Tinting material: carbon black, and coupling agent (intelligence rope (strain) system GPS-M).
These components are mixed according to the content shown in following:
The Resins, epoxy of biphenyl type (A-1) 6.5 weight parts
Solidifying agent (B-1) 1.2 weight parts
Phenol aldehyde type cyanate ester resin (C-1) 7.2 weight parts
Compound (E-1) 4.4 weight parts with at least two benzoxazine rings
Crystalline silica (D-1) 80.0 weight parts
Curing accelerator 1 (imidazoles) 0.15 weight part
Curing accelerator 2 (acetyl acetone cobalt) 0.15 weight part
Releasing agent (carnauba wax) 0.2 weight part
Tinting material (carbon black) 0.1 weight part
Coupling agent (GPS-M) 0.1 weight part
Notice that the median size of crystalline silica used herein (D-1) is by the laser diffraction formula particle size distribution survey meter SALD-7000 of day island proper Tianjin company manufacturing (optical maser wavelength: 405nm) obtain.
Aforementioned component is mixed at normal temperature by mixing tank, carries out kneading with warming mill at 70 ℃ to 120 ℃, and cooling is also pulverized to obtain composition epoxy resin.The composition epoxy resin that is obtained is estimated in the following method, and evaluation result is shown in table 3.
Evaluation method
1. water-intake rate: with the moulding of low pressure transfer molding machine, die temperature is 175 ℃, transmits pressure 7.4 * 10 with the test block of diameter 50mm thickness 3mm
6Pa, 120 seconds set times.Test block is in after fixing process of 8 hours experience of 175 ℃ of heating then.After this, under the condition below test block is carried out the humidification test: temperature: 85 ℃, relative humidity: 85%, 168 hours test durations.Measure the changes in weight of humidification front and back.Here the unit that uses is weight percentage.
2. anti-weldering fragility: will be used for packaged piece amount of warpage test moulding and carried out the after fixing process and handled (175 ℃, 4 hours) 8 packaged pieces, handled 168 hours for 85% time 85 ℃ and relative humidity, under the JEDEC condition of 235 ℃ of top temperatures, carry out the IR reflow treatment then.After finishing dealing with, observe each packaged piece inside have or not peeling off and break with ultrasonic reflectoscope.Defective packaged piece quantity is calculated.Defective encapsulation number of packages n represents with n/8 with the ratio of 8 encapsulation numbers of packages.
The value of attention helical flow, second-order transition temperature (Tg), coefficient of linear expansion α 1 and α 2, packaged piece amount of warpage, thermal shock test and flame retardant resistance test are checked under the condition identical with embodiment 1-1.
(embodiment 3-2 to 3-7)
It is as follows to remove other components that use in embodiment 3-1:
As Resins, epoxy:
The biphenyl aralkyl type Resins, epoxy (A-2) (NC-3000P, Japanese chemical drug (strain) system, softening temperature: 60 ℃, epoxy equivalent (weight): 272, notice that average number of repeat unit k is 3) that mainly comprises the compound of aforementioned chemical formula (13) expression,
The Resins, epoxy (A-3) (E-1032H60, japan epoxy resin (strain) system, fusing point: 56 ℃, epoxy equivalent (weight): 171, notice that number of repeat unit a is 0) that mainly comprises the compound of aforementioned chemical formula (1) expression,
Mainly comprise the compound of aforementioned chemical formula (2) expression naphthalene type four-functional group epoxy resin (A-4) (HP4770, Dai Nippon Printing's (strain) system, epoxy equivalent (weight): 141), perhaps
Naphthol novolak type Resins, epoxy (A-5) (ESN-375, Nippon Steel's chemistry (strain) system, epoxy equivalent (weight): 173) by aforementioned chemical formula (10) expression;
As solidifying agent:
The solidifying agent (B-2) (triaminotriphenyl-carbinol, Northeast chemistry (strain) system, the NH that mainly contain the component of chemical formula (14) expression
2Equivalent: 101),
The phenol aralkyl resin (B-3) (XL-225, Mitsui Chemicals (strain) system, hydroxyl equivalent: 172, softening temperature: 77 ℃, notice that average number of repeat unit d is 3) that mainly contains the compound of chemical formula (5) expression, perhaps
The biphenyl aralkyl type Resins, epoxy (B-4) (MEH-7851ss, bright and change into (strain) system, hydroxyl equivalent: 199, softening temperature: 68 ℃, notice that average number of repeat unit e is 3) that mainly contains the compound of chemical formula (6) expression;
At least the compound that contains two cyanate groups as each molecule: by the cyanate ester resin (C-2) (PT-60, Long Sha Group Co.,Ltd system notice that average number of repeat unit j is 3) of chemical formula (11) expression;
Compound (E-2) with at least two benzoxazine rings;
As mineral filler:
Glass flake (D-2) (RCF140A, NHTechno (strain) system, aspect ratio: 28, median size: 45 μ m),
The microwool (D-3) that forms by glass fibre (CMLF 109, NHTechno (strain) system, and aspect ratio: 35, median size: 70 μ m), or
Spherical fused quartz (D-4) (median size: 15 μ m).
As fire retardant:
Zinc molybdate (F-1) (median size 18 μ m, Xuanwei Japan branch company system),
Zinc borate (F-2) (median size 7 μ m, BORAX corporate system),
Above component is mixed according to content shown in the table 3, and use with embodiment 3-1 in same mode mediate, prepare composition epoxy resin, estimate then.
(comparative example 3-1 to 3-3)
In comparative example 3-1, except that not using phenol aldehyde type cyanate ester resin (C-1), have the compound (E-1) and acetyl acetone cobalt of at least two benzoxazine rings, identical among used component and the embodiment 3-1.In comparative example 3-2, remove and do not use phenol aldehyde type cyanate ester resin (C-1), have the compound (E-1) and the acetyl acetone cobalt of at least two benzoxazine rings and use aluminium hydroxide (CL-303, Sumitomo Chemical (strain) system), identical among used component and the embodiment 3-1 as outside the fire retardant.In comparative example 3-3, except that not with having the compound (E-1) of at least two benzoxazine rings, identical among used component and the embodiment 3-1.Component is mixed according to content shown in the table 3.Comparative example 3-1 to 3-3, use with embodiment 3-1 in identical mode mediate and prepare composition epoxy resin, estimate then.
The result
About warpage and flame retardant resistance, in embodiment 3-1 to embodiment 3-8, obtained good result.In comparative example 3-1, warpage is very big and flame retardant resistance is not enough.Use aluminium hydroxide as fire retardant in comparative example 3-2, flame retardant resistance is guaranteed, but warpage has increased.
[table 3]
In the composition epoxy resin of above-mentioned embodiment and first, second embodiment, flame retardant resistance has obtained maintenance, and has obtained excellent warpage inhibition.Owing to have outstanding especially thermal shock resistance, the face that composition epoxy resin can be applied on the automobile is effectively installed in the semiconducter device.
Claims (22)
1. composition epoxy resin, it is characterized in that, comprise be selected from Resins, epoxy at least a in trifunctional Resins, epoxy and the four-functional group epoxy resin (A), each molecule have at least two can with the solidifying agent (B) of the group of epoxy reaction, compound (C) and the mineral filler (D) that each molecule has at least two cyanate groups, as necessary component.
2. according to the composition epoxy resin of claim 1, it is characterized in that described trifunctional Resins, epoxy is as shown in the formula shown in (1):
Wherein a represents 0～10.
3. according to the composition epoxy resin of claim 1, it is characterized in that described four-functional group epoxy resin is as shown in the formula shown in (2):
4. according to the composition epoxy resin of claim 1, it is characterized in that described each molecule has the compound (C) of at least two cyanate groups as shown in the formula shown in (3):
Wherein, R1～R9 represents to be selected from a kind of in hydrogen atom, methyl, ethyl, propyl group, butyl, hydroxyl, amino, phthalic acid, Tetra hydro Phthalic anhydride and the phenyl respectively, and it can be identical or different; B represents 0～10.
5. according to the composition epoxy resin of claim 1, it is characterized in that described mineral filler (D) is crystalline silica and/or glass flake.
6. according to the composition epoxy resin of claim 5, it is characterized in that described glass flake has aspect ratio 10 to 40.
7. according to the composition epoxy resin of claim 1, it is characterized in that described each molecule has the solidifying agent (B) of at least two hydroxyls as shown in the formula shown in (4), (5) and/or (6):
Wherein c is 0～10;
Wherein d is 1～10;
Wherein e is 1～10.
8. according to the composition epoxy resin of claim 1, it is characterized in that the content of described mineral filler (D) is the 65 weight %～85 weight % of composition epoxy resin.
9. according to the composition epoxy resin of claim 1, it is characterized in that, further comprise compound (E) with at least two benzoxazine rings.
10. according to the composition epoxy resin of claim 9, it is characterized in that described compound (E) per molecule with at least two benzoxazine rings has at least two carbon-to-carbon triple bonds.
11. the composition epoxy resin according to claim 9 is characterized in that, further comprises at least a as fire retardant (F) in zinc molybdate and the zinc borate.
12. the composition epoxy resin according to claim 11 is characterized in that, the content of described mineral filler (D) and fire retardant (F) is 65 weight % of composition epoxy resin～85 weight %.
13. the composition epoxy resin according to claim 1 is characterized in that, further comprises fire retardant (F).
14. the composition epoxy resin according to claim 13 is characterized in that, described fire retardant (F) is selected from compound zinc molybdate and the zinc borate at least a.
15. the composition epoxy resin according to claim 13 is characterized in that, the content of described mineral filler (D) and fire retardant (F) is 65 weight % of composition epoxy resin～85 weight %.
16. the composition epoxy resin according to claim 13 is characterized in that, further comprises curing accelerator (G), described curing accelerator (G) comprises at least a compound that is selected from compound, metal complex and the metal oxide with phenolic hydroxyl group.
17. the composition epoxy resin according to claim 16 is characterized in that, described compound with phenolic hydroxyl group is dihydroxyphenyl propane, Bisphenol F or bisphenol S.
18. the composition epoxy resin according to claim 16 is characterized in that, the atoms metal of described metal complex and metal oxide is Mn, Fe, Co, Ni, Cu, Zn, Al or Sn.
19. the composition epoxy resin according to claim 16 is characterized in that, described metal complex is naphthenate complex, sad complex compound, acetylacetonate complex or cyclopentadiene base complex.
20. the composition epoxy resin according to claim 1 is characterized in that, the value of second-order transition temperature or above coefficient of linear expansion α 2 is not more than the twice of the value of the following coefficient of linear expansion α 1 of second-order transition temperature.
21. the composition epoxy resin according to claim 1 is characterized in that, further comprises the curing accelerator (H) by following general formula (7) expression:
Wherein P represents phosphorus atom; R
10, R
11, R
12And R
13Be that replace or unsubstituted aryl group or replacement or unsubstituted alkyl; A
1Be aromatic group, B
1Be singly-bound or the divalent substituent that is selected from ether, sulfuryl, sulfenyl and carbonyl, or contain the divalent organic group of 1 to 13 carbon atom; And f is 0＜f＜1.
22. face is installed semiconducter device, it has had surface mounting semiconductor element and the substrate of having only this one side fully to seal with composition epoxy resin, it is characterized in that, described composition epoxy resin is a composition epoxy resin according to claim 1, and this composition epoxy resin further solidifies under 190 ℃ to 230 ℃ temperature after the semiconducter device moulding.
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| Application Number | Priority Date | Filing Date | Title |
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| JP287981/2005 | 2005-09-30 | ||
| JP2005287981 | 2005-09-30 | ||
| JP379313/2005 | 2005-12-28 | ||
| JP000953/2006 | 2006-01-05 |
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| CN2012103520954A Division CN102898620A (en) | 2005-09-30 | 2006-09-27 | Epoxy resin composition and semiconductor device |
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| CN103626959A (en) * | 2009-03-27 | 2014-03-12 | 日立化成工业株式会社 | Thermosetting resin composition, and prepreg, insulating film with support, laminate plate, and printed wiring board, each obtained using same |
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| WO2010121393A1 (en) * | 2009-04-21 | 2010-10-28 | Dow Global Technologies Inc | Anisotropic composite |
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