CN101276824B - Semiconductor device and electronic device - Google Patents

Abstract

The present invention is a semiconductor device, comprising: a photoelectric conversion layer; an amplifier circuit that amplifies the output current of the photoelectric conversion layer and includes two thin film transistors; a first terminal for supplying a high-potential power supply; a second terminal for supplying a low-potential power supply; connecting the two thin film transistors and electrodes of the photoelectric conversion layer; electrically connecting the first terminal and the first wiring of the first thin film transistor of one of the two thin film transistors; and electrically connecting the second terminal and the second wiring of the second thin film transistor of the other of the two thin film transistors. In the above semiconductor device, the amount of voltage drop between the first wiring and the second wiring is increased by bending the first wiring and the second wiring.

Description

Semiconductor devices and electronic equipment

technical field

The present invention relates to a semiconductor device. In particular, the present invention relates to a semiconductor device having a photoelectric conversion element composed of a thin film semiconductor element and a method for manufacturing the same. In addition, it also relates to electronic equipment using a semiconductor device having a photoelectric conversion element.

Background technique

Various photoelectric conversion devices for detecting electromagnetic waves are generally known, for example, devices capable of sensing from ultraviolet rays to infrared rays are collectively called photosensors (also referred to as photosensors). Among them, the device that has a sensing function in the visible light region with a wavelength of 400nm to 700nm is called a visible light sensor. The visible light sensor is used to adjust the intensity or control on/off equipment according to the needs of people's living environment.

In particular, in a display device, the brightness around the display device is detected to adjust its display brightness. This is because unnecessary power consumption can be reduced by detecting the surrounding brightness to obtain an appropriate display brightness. For example, such photosensors for brightness adjustment are used in cellular phones or personal computers.

In addition, in addition to detecting the brightness of the surroundings, the brightness of the display screen is also adjusted by using the light sensor to detect the brightness of the backlight of the display device, especially the liquid crystal display device.

In this photosensor, a photodiode is used for a detection section, and an output current of the photodiode is amplified in an amplifier circuit. For example, a current mirror circuit is used as such an amplifier circuit (for example, refer to Patent Document 1).

[Patent Document 1] Japanese Patent Laid-Open No. 2005-136394

Although a current mirror circuit is formed using transistors, electrodes or semiconductor elements may be damaged due to static electricity generated during manufacture or use.

However, if a protection circuit connected to the electrodes is provided in order to prevent damage to components by static electricity, that is, Electrostatic Discharge (ESD), the size of the photosensor will increase.

Contents of the invention

The object of the present invention is to increase the resistance value by forming the electrodes that are formed using the same material and the same process as the source electrode and the drain electrode and are electrically connected to the power supply electrode not in a straight line, but in a curved or bent shape to prevent static electricity. destroy.

The present invention is a semiconductor device including a photoelectric conversion element, an amplifier circuit, and input/output terminals. The semiconductor device has a structure in which wiring connecting the photoelectric conversion element and the amplifier circuit and/or connecting input/output terminals and the amplifier circuit are bent or bent. By bending or bending the wiring shape, wiring resistance can be increased to prevent electrostatic breakdown. Such bent or bent wiring is also effective when it is thinned and divided into multiple lines.

The present invention relates to the following semiconductor devices.

A semiconductor device, comprising: a photoelectric conversion layer; an amplifier circuit that amplifies the output current of the photoelectric conversion layer and is composed of at least two thin film transistors; a first terminal for supplying a high-potential power supply and a second terminal for supplying a low-potential power supply; electrically connecting the two thin film transistors and electrodes of the photoelectric conversion layer; electrically connecting the first thin film transistor of one of the two thin film transistors and the first wiring of the first terminal; and electrically connecting the first thin film transistor A thin film transistor, a second thin film transistor of the other of the two thin film transistors, and a second wiring of the second terminal, wherein the first wiring and the second wiring are bent so that the The voltage drop amount of the first wiring and the second wiring becomes large.

A semiconductor device, comprising on its substrate: at least two thin film transistors; a first interlayer insulating film whose end portion is tapered on the thin film transistor; A source electrode of a source region of a first thin film transistor connected to one of the thin film transistors, a drain electrode of a drain region electrically connected to the first thin film transistor, a gate electrode electrically connected to a gate electrode of the first thin film transistor Electrode wiring, a first electrode applied with a voltage from a low-potential power supply, a second electrode, a third electrode applied with a voltage from a high-potential power supply; a photoelectric conversion layer overlapping the second electrode; covering the substrate , the first interlayer insulating film, the first electrode, the source electrode, the gate wiring, the drain electrode, the second electrode, the photoelectric conversion layer, and the third electrode a protective film; a second interlayer insulating film on the protective film; and a fourth electrode electrically connected to the first electrode, a fourth electrode electrically connected to the photoelectric conversion layer on the second interlayer insulating film, The upper layer and the fifth electrode of the third electrode, wherein the drain electrode of the first thin film transistor is electrically connected to the third electrode, and the source electrode of the first thin film transistor is electrically connected to the first electrode, and by bending the drain electrode and source electrode of the first thin film transistor, the voltage drop of the drain electrode and source electrode of the first thin film transistor is increased.

In the present invention, the amplifier circuit is a current mirror circuit.

By the present invention, electrostatic destruction can be suppressed without increasing the size of the photosensor. Therefore, the reliability of the semiconductor device can be improved without changing the size of the semiconductor device.

Description of drawings

Fig. 1 is the top view of the photoelectric conversion device of the present invention;

2 is a top view of the photoelectric conversion device of the present invention;

Fig. 3 is the circuit diagram of the photoelectric conversion device of the present invention;

4 is a cross-sectional view of the photoelectric conversion device of the present invention;

5A to 5C are cross-sectional views showing the manufacturing process of the photoelectric conversion device of the present invention;

6A to 6C are sectional views showing the manufacturing process of the photoelectric conversion device of the present invention;

7A and 7B are cross-sectional views showing the manufacturing process of the photoelectric conversion device of the present invention;

8 is a cross-sectional view showing the manufacturing process of the photoelectric conversion device of the present invention;

Fig. 9 is a circuit diagram of the photoelectric conversion device of the present invention;

10 is a circuit diagram of the photoelectric conversion device of the present invention;

11 is a top view of the photoelectric conversion device of the present invention;

12A and 12B are cross-sectional views showing the manufacturing process of the photoelectric conversion device of the present invention;

Fig. 13 is a diagram showing a device mounted with a photoelectric conversion device of the present invention;

14A and 14B are diagrams showing devices mounted with the photoelectric conversion device of the present invention;

15A and 15B are diagrams showing devices mounted with the photoelectric conversion device of the present invention;

Fig. 16 is a diagram showing a device mounted with a photoelectric conversion device of the present invention;

17A and 17B are diagrams showing devices mounted with the photoelectric conversion device of the present invention;

18 is a top view of the photoelectric conversion device of the present invention;

Fig. 19 is a plan view of the photoelectric conversion device of the present invention.

Detailed ways

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different ways, and those skilled in the art can easily understand the fact that the ways and details can be changed into various forms without departing from the spirit and scope of the present invention. in various forms. Therefore, the present invention should not be interpreted as being limited only to the contents described in the embodiments of the present invention.

Note that in all the drawings illustrating the embodiments of the present invention, the same reference numerals are used for the same parts or parts having the same functions, and repeated descriptions are omitted.

Embodiment 1

The photoelectric conversion device of this embodiment will be described below with reference to FIGS.

First, as shown in FIG. 3 , the photoelectric conversion device 100 of the present embodiment includes a current mirror circuit 101 which is an amplifier circuit for amplifying the photodiode 103 and the output current of the photodiode 103 . The current mirror circuit 101 includes a thin film transistor (Thin Film Transistor; TFT) 104 and a thin film transistor 105 .

In this embodiment, n-channel TFTs are used as TFT104 and TFT105. In the current mirror circuit 101, by applying the same voltage to the gate electrodes of the TFT 104 on the reference side and the TFT 105 on the output side, the current flowing through the TFT 104 on the reference side is used as a reference to control the current flowing through the TFT 105 on the output side. current.

In FIG. 3 , the gate electrode of TFT 104 constituting current mirror circuit 101 is electrically connected to the gate electrode of another TFT 105 constituting current mirror circuit 101, and is further electrically connected to the drain electrode of one of the source electrode and drain electrode of TFT 104 (also called the sink terminal).

The drain terminal of the TFT 104 is electrically connected to the drain terminal of the TFT 105 through the photodiode 103 and the resistor 113 , and is also electrically connected to the terminal 111 to which the high-potential power supply V _dd is supplied.

The other source electrode (also referred to as a source terminal) of the source electrode or the drain electrode of the TFT 104 is electrically connected to a terminal 112 for supplying a low-potential power supply V _ss and a source terminal of the TFT 105 through an intermediate resistor 114 .

In addition, the gate electrode of TFT 105 constituting current mirror circuit 101 is electrically connected to the gate electrode and drain terminal of TFT 104 .

The drain terminal intermediary resistor 113 of the TFT 105 is electrically connected to the terminal 111 supplied with a high-potential power supply V _dd and the drain terminal of the TFT 104 .

The source terminal of the TFT 105 and the source terminal of the TFT 104 are electrically connected to the terminal 112 supplied with the low-potential power supply V _ss via the intermediate resistor 114 .

In addition, since the gate electrodes of the TFT 104 and the TFT 105 are connected to each other, a common potential V _gate is applied thereto.

The resistance 113 and the resistance 114 are the wiring resistance of the wiring 121 and the wiring 122 mentioned later, respectively. Wiring 121 is a wiring that connects the drain terminal of TFT 105 and terminal 111 . Wiring 122 is a wiring that connects source terminals of TFTs 104 and 105 to terminal 112 .

FIG. 3 shows an example of a current mirror circuit composed of two TFTs. At this time, when the TFT 104 and the TFT 105 have the same characteristics, the ratio of the reference current to the output current is 1:1.

FIG. 9 shows a circuit structure for multiplying the output value by n. The circuit configuration of FIG. 9 corresponds to a configuration in which there are n TFTs 105 in FIG. 3 . As shown in FIG. 9, by setting the ratio of the n-channel TFT 104 to the n-channel TFT 105 at 1:n, the output value can be increased by n times. This is the same principle as increasing the channel width W of the TFT so that the allowable amount of current that can flow into the TFT becomes n times.

For example, when the output value is designed to be 100 times larger, a desired current can be obtained by connecting one n-channel TFT 104 and one hundred n-channel TFTs 105 in parallel.

The reference numerals appended with i in FIG. 9 are the same as the reference numerals not appended with i in FIG. 3 . In other words, for example, TFT 105 of FIG. 3 and TFT 105i of FIG. 9 are the same, and resistor 113 of FIG. 3 is the same as 113i of FIG. 9 . Also, in the notation of FIG. 9 , "α" is attached to the first TFT or resistor, "β" is attached to the second TFT or resistor, and Greek letters are attached sequentially. The symbols appended with "α" or "β" are the same as the symbols not appended with "α" or "β" in FIG. 3 , respectively.

Therefore, in FIG. 9 , n-channel TFT 105 is composed of n n-channel TFTs 105α, 105β, 105γ, ˜, 105i, ˜105n. Accordingly, the current flowing into the TFT 104 is amplified by n times and output.

FIG. 1 is a plan view of a photoelectric conversion device according to this embodiment. The photoelectric conversion device of Fig. 1 comprises: photodiode 103; Have the current mirror circuit 101 of TFT104 and TFT105; Supply the terminal 111 of high-potential power supply _VDD ; Supply the terminal 112 of low-potential power supply _VSS ; Electrically connect terminal 111 and photodiode 103 wiring 115 (same as electrode 232 described later); wiring 116 electrically connected to terminal 112 (same as electrode 231 described later); 222 ); the wiring 121 electrically connecting the drain terminal of the TFT 105 to the terminal 111 ; and the wiring 122 electrically connecting the source terminal of the TFT 104 to the terminal 112 .

The wiring 121 and the wiring 122 are not formed in a straight line, but are formed in a continuously curved or bent shape. Specifically, by forming the wiring 121 and the wiring 122 into a Japanese katakana "U" shape, a wave shape, or other continuously meandering zigzag shapes, the resistance 113 of the wiring resistance of the wiring 121 and the wiring resistance of the wiring 122 can be reduced. The size of the resistor 114 (see FIG. 3 and FIG. 9 ) becomes larger. By bending the wiring 121 and the wiring 122 in this way, the voltage drop amount of the wiring 121 and the wiring 122 is increased.

Therefore, it is possible to alleviate the high potential applied to the TFT 104 and the TFT 105 due to static electricity generated at the terminal 111 and the terminal 112 .

In addition, there is an advantage in that wiring resistance is increased by bending wiring 121 and wiring 122 , so that it is not necessary to separately provide a protection circuit, which does not increase the size of the photoelectric conversion device.

FIG. 2 shows a photoelectric conversion device having wiring 1121 and wiring 1122, wherein wiring 1121 is not formed in a bent shape but is formed in a linear shape instead of the wiring 121 in FIG. The wires 122 in FIG. 1 are replaced by straight lines.

In this way, when the wiring 1121 and the wiring 1122 are formed linearly, the wiring resistance cannot be increased, so the amount of voltage drop is kept small. Therefore, even if the terminal 111 and the terminal 112 generate a high potential due to static electricity, the high potential cannot be alleviated. Therefore, there is a possibility that electrostatic breakdown of TFT104 and TFT105 cannot be suppressed.

In addition, instead of making the electrode 133 have a circular tip shape overlapping the photodiode 103 as in FIG. 1 , the shape of the area overlapping the photodiode 103 may be rectangular as shown in FIG. 18 . By making the electrode 133 in a region overlapping with the photodiode 103 rectangular, electric field concentration can be prevented. In addition, by making the electrode 133 in the area overlapping the photodiode 103 rectangular, if the distance between the electrode (electrode 232 described later) facing the electrode 133 sandwiching the photodiode 103 can be increased, electrostatic breakdown can be suppressed. As above, the reliability of the photoelectric conversion device can be improved.

In addition, although FIG. 3 shows the current mirror circuit as an equivalent circuit using n-channel TFTs, p-channel TFTs may be used instead of n-channel TFTs.

When an amplifier circuit is formed of p-channel TFTs, it becomes an equivalent circuit shown in FIG. 10 . The photoelectric conversion device 300 shown in Figure 10 includes: a photodiode 303; a current mirror circuit 301 composed of a p-channel type TFT304 and a p-channel type TFT305; a terminal 311 for supplying a high-potential power supply _VDD ; supplying a low-potential power supply _VSS terminal 312; a resistor 313 between the terminal 311 and the TFT 305; a resistor 314 disposed between the photodiode 303 and the terminal 312 and between the TFT 305 and the terminal 312.

The resistor 313 and the resistor 314 are the same as the resistor 113 and the resistor 114 , and are provided for suppressing electrostatic damage, and their functions are the same as those of the resistor 113 and the resistor 114 .

In addition, in this embodiment mode, the TFT 104 and the TFT 105 are shown as an example of a top-gate TFT including a channel formation region (in this specification, referred to as a single-gate structure), however, it is also possible to use a TFT having a plurality of channels. Form the structure of the region to reduce the instability of the conduction current.

In addition, in order to reduce off-state current, a lightly doped drain (LDD) region may be provided in n-channel TFT 104 and n-channel TFT 105 . The LDD region refers to a region where an impurity element is added at a low concentration between a channel formation region and a source or drain region formed by adding an impurity element at a high concentration. By providing the LDD region, the effects of relieving the electric field near the drain region and preventing TFT degradation due to hot carrier injection can be obtained.

In addition, in order to prevent the reduction of the on-current due to hot carriers, the n-channel TFT 104 and the n-channel TFT 105 may have a structure in which the LDD region and the gate electrode are overlapped with each other with the gate insulating film interposed (in In this specification, it is referred to as a GOLD (Gate-Drain Overlapped LDD) structure).

Compared with the case where the LDD region and the gate electrode are formed without overlapping each other, in the case of using the GOLD structure, there is an effect of relaxing the electric field near the drain region to prevent TFT degradation due to hot carrier injection. By adopting this GOLD structure, the electric field intensity near the drain region is relieved, and hot carrier injection is prevented, thereby effectively preventing TFT degradation.

In addition, the TFT 104 and the TFT 105 constituting the current mirror circuit 101 may be not only top-gate TFTs but also bottom-gate TFTs such as inverted staggered TFTs.

Next, a method of manufacturing the photoelectric conversion device of this embodiment will be described.

First, an insulating film 202 is formed over a substrate 201 (see FIG. 5A). As the substrate 201, any one of a glass substrate, a quartz substrate, a ceramic substrate, a silicon substrate, a metal substrate, or a stainless steel substrate or the like can be used. In this embodiment mode, a glass substrate is used as the substrate 201 .

The insulating film 202 is formed of a silicon oxide film, silicon oxide containing nitrogen, silicon nitride, silicon nitride containing oxygen, or a metal oxide material by a sputtering method or a plasma CVD method.

Alternatively, the insulating film 202 may be formed in two layers of a lower insulating film and an upper insulating film. As the lower insulating film, for example, a silicon nitride film containing oxygen ( _{SiOxNy :} y>x) can be used, and as the upper insulating film, for example, a silicon oxide film containing nitrogen ( _SiOxNy : _x >y) can be used. ). By making the insulating film 202 have a two-layer structure, it is possible to prevent contamination of moisture or the like from the substrate 201 side.

Next, a crystalline semiconductor film is formed on the insulating film 202, and the crystalline semiconductor film is etched into an island shape to form an island-shaped semiconductor film 212 as an active layer.

Furthermore, a gate insulating film 205 covering the island-shaped semiconductor film 212 is formed, and a lower gate electrode 213 a and an upper gate electrode 213 b are provided on the gate insulating film 205 . Although the gate electrode 213 has a two-layer structure of a lower gate electrode 213 a and an upper gate electrode 213 b in FIG. 5B , a single-layer gate electrode 213 may also be manufactured. Furthermore, an active region, a drain region, and a channel formation region are formed in the island-shaped semiconductor film 212 .

An interlayer insulating film 206 is formed to cover the gate electrode 213 having the lower gate electrode 213a and the upper gate electrode 213b, and the gate insulating film 205.

Note that the interlayer insulating film 206 may be formed of a single insulating film, or may be a laminated film of insulating layers made of different materials.

A source electrode 215 and a drain electrode 216 electrically connected to the source region and the drain region in the island-shaped semiconductor film 212 are formed on the interlayer insulating film 206 . A gate wiring 214 electrically connected to the gate electrode 213 is also formed.

Furthermore, an electrode 221 , an electrode 222 , and an electrode 223 are formed on the interlayer insulating film 206 . Electrode 221 , electrode 222 , and electrode 223 are formed using the same material and the same process as gate wiring 214 , source electrode 215 , and drain electrode 216 . However, these electrodes 221 , 222 , and 223 may be formed using different materials and different steps from those of the gate wiring 214 , source electrode 215 , and drain electrode 216 .

Electrode 222 is the same as electrode 133 of FIG. 1 . In addition, the electrode 221 is the same as the terminal 112 of FIG. 1 , and the electrode 223 is the same as the terminal 111 . That is, a low potential from a low potential power supply is applied to the electrode 221 , and a high potential from a high potential power supply is applied to the electrode 223 .

In addition, the drain electrode 216 is the same as the wiring 121 of FIG. 1 , or at least formed of the same material. The source electrode 215 is the same as the wiring 122 of FIG. 1 , or at least formed of the same material.

By forming the drain electrode 216 and the source electrode 215 not in a straight line, but in a Japanese katakana character "U" shape or another curved shape, wiring resistance can be increased and electrostatic breakdown can be suppressed.

The gate wiring 214, the source electrode 215, the drain electrode 216, the electrode 221, the electrode 222, and the electrode 223 are formed using a high-melting-point metal film and a metal film such as a laminated structure with a low-resistance metal film. Examples of such a low-resistance metal film include aluminum alloys, pure aluminum, and the like. In addition, in this embodiment, a three-layer structure in which a titanium film (Ti film), an aluminum film (Al film), and a Ti film are sequentially stacked is formed as the stacked structure of such a high-melting-point metal film and a low-resistance metal film.

In addition, the gate wiring 214, the source electrode 215, the drain electrode 216, the electrode 221, the electrode 222, and the electrode 223 may be formed of a single-layer conductive film instead of a stacked structure of a high-melting-point metal film and a low-resistance metal film. As such a single-layer conductive film, a single-layer film composed of a material selected from titanium (Ti), tungsten (W), tantalum (Ta), molybdenum (Mo), neodymium (Nd), Cobalt (Co), zirconium (Zr), zinc (Zn), rubidium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), and platinum (Pt) elements, so Alloy materials or compound materials mainly composed of the above-mentioned elements, or nitrides of these, such as titanium nitride, tungsten nitride, tantalum nitride, and molybdenum nitride.

Note that in the process up to FIG. 5C, only one TFT is shown. Actually, however, the TFT 211 is a TFT constituting an amplifier circuit such as a current mirror circuit that amplifies the current available in the photodiode 103, so that at least two TFTs are formed.

Note that in this embodiment mode, the gate wiring 214, the source electrode 215, the drain electrode 216, the electrode 221, the electrode 222, and the electrode 223 are formed by using a titanium film obtained by depositing titanium (Ti) with a thickness of 400 nm. .

Next, the end portions of the interlayer insulating film 206, the gate insulating film 205, and the insulating film 202 are etched into a tapered shape (see FIG. 6A).

By making the ends of the interlayer insulating film 206, the gate insulating film 205, and the insulating film 202 tapered, the coverage of the protective film 227 formed on them can be made good, and it is difficult to enter moisture or impurities. Effect.

Next, a p-type semiconductor film, an i-type semiconductor film, and an n-type semiconductor film are deposited on the interlayer insulating film 206 and the electrode 222 and etched to form a p-type semiconductor film 225p, an i-type semiconductor film 225i, and an n-type semiconductor film. The photoelectric conversion layer 225 of the semiconductor film 225n (see FIG. 6B ).

The p-type semiconductor layer 225p can be formed by depositing an amorphous semiconductor film containing an impurity element belonging to Group 13 such as boron (B) by a plasma CVD method.

In FIG. 6B , the electrode 222 is in contact with the lowermost layer of the photoelectric conversion layer 225 , that is, the p-type semiconductor layer 225p in this embodiment mode.

As the i-type semiconductor layer 225i, for example, an amorphous semiconductor film can be formed by plasma CVD. In addition, as the n-type semiconductor layer 225n, an amorphous semiconductor film containing an impurity element belonging to Group 15 such as phosphorus (P) may be formed, or an impurity element belonging to Group 15 may be introduced after forming the amorphous semiconductor film.

Note that an amorphous silicon film, an amorphous germanium film, or the like may also be used as the amorphous semiconductor film.

Note that, in this specification, an i-type semiconductor film refers to a semiconductor film in which the concentration of an impurity imparting p-type or n-type included in the semiconductor film is 1×10 ²⁰ cm ⁻³ or less, and the concentration of oxygen and nitrogen is 5 ×10 ¹⁹ cm ^-3 or less, and the light conductivity is more than 100 times the dark conductivity. In addition, the i-type semiconductor film may be added with 10 ppm to 1000 ppm of boron (B).

In addition to using an amorphous semiconductor film, a microcrystalline semiconductor film (also referred to as a semi-amorphous semiconductor film) may be used as the p-type semiconductor layer 225p, the i-type semiconductor layer 225i, and the n-type semiconductor layer 225n.

Alternatively, the p-type semiconductor layer 225p and the n-type semiconductor layer 225n may be formed using a microcrystalline semiconductor film, and an amorphous semiconductor film may be used as the i-type semiconductor layer 225i.

Note that a semi-amorphous semiconductor film refers to a film of a semiconductor having an intermediate structure between an amorphous semiconductor and a semiconductor of a crystalline structure (including single crystal and polycrystal). This semi-amorphous semiconductor film is a semiconductor film having a third state that is stable in terms of free energy, and has short-range order and crystal lattice distortion, and can be dispersed with a particle size of 0.5 nm to 20 nm. in non-single crystal semiconductor films. In the semi-amorphous semiconductor film, the Raman spectrum is shifted to a frequency lower than 520 cm ^-1 , and when X-ray diffraction is performed, (111), (220) diffraction due to the Si lattice is observed peak. In addition, at least 1 atomic % or more of hydrogen or halogen is introduced in order to terminate dangling bonds. In this specification, such a semiconductor film is referred to as a semi-amorphous semiconductor (SAS) film for convenience. Furthermore, by including rare gas elements such as helium, argon, krypton, and neon in the semi-amorphous semiconductor film to further promote lattice distortion, a high-quality semi-amorphous semiconductor film with improved stability can be obtained. Note that semi-amorphous semiconductor films also include microcrystalline semiconductor films.

In addition, a SAS film can be obtained by glow discharge decomposition of a silicon-containing gas. SiH ₄ is exemplified as a typical silicon-containing gas. Other than these, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF ₄ and the like can also be used. In addition, the SAS film can be easily formed by diluting the silicon-containing gas with hydrogen or a gas in which one or more rare gas elements selected from helium, argon, krypton, and neon are added to hydrogen. The silicon-containing gas is preferably diluted at a dilution ratio ranging from 2 times to 1000 times. Furthermore, carbide gases such as CH ₄ , C ₂ H ₆ , germanization gases such as GeH ₄ , GeF _{4 ,} F ₂ , etc. may be mixed into the silicon-containing gas to adjust the energy band width to 1.5 eV. to 2.4eV or 0.9eV to 1.1eV.

Note that, in this specification, the photoelectric conversion layer 225 , the photodiode 103 including the photoelectric conversion layer 225 , and the element including the photodiode 103 are sometimes referred to as a photoelectric conversion element or a photoelectric conversion device.

Next, a protective film 227 is formed to cover the exposed surface (see FIG. 6C ). As the protective film 227, a silicon nitride film is used in this embodiment. The protective film 227 can prevent impurities such as moisture and organic substances from entering the TFT 211 or the photoelectric conversion layer 225 .

Next, an interlayer insulating film 228 is formed on the protective film 227 (see FIG. 7A ). The interlayer insulating film 228 also functions as a planarization film. In the present embodiment, polyimide is formed to have a thickness of 2 μm as the interlayer insulating film 228 .

Next, the interlayer insulating film 228 is etched to form a contact hole. At this time, since the protective film 227 is present, the gate wiring 214, the source electrode 215, and the drain electrode 216 of the TFT 211 are not etched. Then, the protective film 227 in the region where the electrode 231 and the electrode 232 are formed is etched to form a contact hole. Furthermore, the contact hole formed in the interlayer insulating film 228 and the protective film 227 is formed on the interlayer insulating film 228 to be electrically connected to the electrode 231 of the electrode 221, and the contact hole formed in the interlayer insulating film 228 and the protective film 227 is formed via an interlayer. The contact hole is electrically connected to the upper layer of the photoelectric conversion layer 225 (in this embodiment, it is the n-type semiconductor layer 225n) and the electrode 232 of the electrode 223 (FIG. 7B). As the electrode 231 and the electrode 232 , tungsten (W), titanium (Ti), tantalum (Ta), silver (Ag), or the like can be used.

In addition, the electrode 231 is the same as, or at least formed of, the same material as the wiring 116 of FIG. 1 , and the electrode 232 is the same as, or at least formed of, the same material as the wiring 115 of FIG. 1 .

In the present embodiment, as the electrode 231 and the electrode 232 , a conductive film of titanium (Ti) deposited to a thickness of 30 to 50 nm is used.

Next, an interlayer insulating film 235 is formed on the interlayer insulating film 228 by a screen printing method or an inkjet method (see FIG. 8 ). At this time, the interlayer insulating film 235 is not formed on the electrodes 231 and 232 . In this embodiment, epoxy resin is used as the interlayer insulating film 235 .

Next, an electrode 241 electrically connected to the electrode 231 and an electrode 242 electrically connected to the electrode 232 are manufactured by using a printing method such as nickel (Ni) paste. Furthermore, an electrode 243 is formed on the electrode 241 by a printing method using copper (Cu) paste, and an electrode 245 is formed on the electrode 242 (see FIG. 4 ).

The photoelectric conversion device of this embodiment was produced as described above. The photoelectric conversion device of this embodiment can suppress electrostatic destruction without changing the overall size of the photoelectric conversion device. Thereby, the reliability of the photoelectric conversion device and the semiconductor device having the photoelectric conversion device can be improved.

Embodiment 2

In this embodiment, a photoelectric conversion device having a structure different from that of Embodiment 1 will be described with reference to FIG. 11 , FIGS. 12A and 12B , and FIG. 19 .

Note that, since this embodiment is based on Embodiment 1, the same parts as in Embodiment 1 are denoted by the same symbols.

The photoelectric conversion device of this embodiment is shown in FIG. 11 . FIG. 1 in the first embodiment differs from FIG. 11 in the present embodiment in that an electrode 401 is formed on the wiring 121 and an electrode 402 is formed on the wiring 122 .

By forming the electrodes 401 and 402, the resistance values of the resistors 113 and 114 of the wiring resistors are increased. Therefore, electrostatic destruction can be further suppressed.

A section along A-A' in FIG. 11 is shown in FIG. 12A. A wiring 121 is formed on an insulating film 202 on a substrate 201 , and an interlayer insulating film 228 covers the wiring 121 . An electrode 401 is formed on the interlayer insulating film 228 using the same material and the same manufacturing process as the electrodes 231 and 232 , and the electrode 401 is electrically connected to the wiring 121 . In addition, an interlayer insulating film 235 covering the electrode 401 is formed.

In addition, in the photoelectric conversion device shown in FIG. 19 , the electrical connection between wiring 121 and electrode 401 has a different structure from that of the photoelectric conversion device shown in FIG. 11 . The section along B-B' in FIG. 19 is shown in FIG. 12B. The wirings 121 and the electrodes 401 are electrically connected to each other in a vertical direction. By adopting such a structure, the wiring resistance can be further increased, so that electrostatic breakdown can be further suppressed.

In addition, the connection structure of the wiring 122 and the electrode 402 may be the same structure as the connection structure of the wiring 121 and the electrode 401 of FIG. 12B.

The photoelectric conversion device of this embodiment can increase the resistance values of the resistor 113 and the resistor 114 . Therefore, electrostatic destruction can be suppressed without changing the overall size of the photoelectric conversion device. Thereby, the reliability of the photoelectric conversion device and the semiconductor device having the photoelectric conversion device can be improved.

Embodiment 3

In this embodiment mode, examples in which the photoelectric conversion devices obtained in Embodiment Mode 1 and Embodiment Mode 2 are incorporated into various electronic devices will be described. Examples of electronic devices to which this embodiment is applied include computers, monitors, mobile phones, televisions, and the like. Specific examples of these electronic devices are shown using FIGS. 13 , 14A and 14B, 15A and 15B, 16 , 17A and 17B.

13 is a portable phone, and includes a main body A701, a main body B702, a frame body 703, operation keys 704, a sound input part 705, a sound output part 706, a circuit substrate 707, a display panel A708, a display panel B709, a hinge 710, a light-transmitting The material part 711, and the photoelectric conversion device 712 obtained by Embodiment 1 and Embodiment 2.

The photoelectric conversion device 712 detects the light transmitted through the light-transmitting material part 711, and not only controls the brightness of the display panel A708 and the display panel B709 according to the intensity of the detected external light, but also controls the operation keys according to the intensity obtained by the photoelectric conversion device 712. 704 lighting. Accordingly, the power consumption of the mobile phone can be suppressed.

14A and 14B show another example of a portable phone. The mobile phone in FIGS. 14A and 14B includes a main body 721, a housing 722, a display panel 723, operation keys 724, a voice output unit 725, a voice input unit 726, a photoelectric conversion device 727 obtained in Embodiment 1 and Embodiment 2, and Photoelectric conversion device 728 .

In the cellular phone shown in FIG. 14A , by detecting external light with a photoelectric conversion device 727 provided in a main body 721 , brightness of a display panel 723 and operation keys 724 can be controlled.

In addition, the mobile phone shown in FIG. 14B has a photoelectric conversion device 728 inside a main body 721 in addition to the structure shown in FIG. 14A . The brightness of the backlight provided in the display panel 723 can be detected by the photoelectric conversion device 728 .

FIG. 15A is a computer, and includes a main body 731, a housing 732, a display portion 733, a keyboard 734, an external connection port 735, a pointing device 736, and the like.

In addition, FIG. 15B is a display device, and corresponds to a television receiver or the like. This display device includes a frame body 741 , a support body 742 , a display portion 743 , and the like.

FIG. 16 shows a detailed configuration when a liquid crystal panel is used as the display unit 733 provided in the computer shown in FIG. 15A and the display unit 743 of the display device shown in FIG. 15B .

The liquid crystal panel 762 shown in FIG. 16 is embedded in a frame 761, and includes substrates 751a and 751b, a liquid crystal layer 752 sandwiched between the substrates 751a and 751b, polarization filters 755a and 755b, and a backlight 753. In addition, a photoelectric conversion device formation region 754 having a photoelectric conversion device obtained in Embodiment 1 and Embodiment 2 is formed in the frame body 761 .

The light intensity information from the backlight 753 is sensed by the photoelectric conversion device forming region 754 and the information is fed back, whereby the brightness of the liquid crystal panel 762 is adjusted.

17A and 17B are diagrams showing an example in which the photoelectric conversion device of the present invention is incorporated in an image capturing device such as a digital camera. Fig. 17A is a perspective view seen from the front of the digital camera, and Fig. 17B is a perspective view seen from the rear thereof.

In FIG. 17A , the digital camera includes a release button 801 , a main switch 802 , a viewfinder 803 , a flash 804 , a lens 805 , a lens barrel 806 , and a housing 807 .

In addition, in FIG. 17B , the digital camera includes an eyepiece viewfinder 811 , a monitor 812 , and operation buttons 813 .

When the release button 801 is pressed to the half position, the focus adjustment mechanism and the exposure adjustment mechanism work, and when the release button is pressed to the bottom position, the shutter opens.

By pressing or rotating the main switch 802, the power of the digital camera is turned on or off.

The viewfinder 803 is disposed above the lens 805 on the front of the digital camera, and is used to check the shooting range and focus position from the eyepiece viewfinder 811 shown in FIG. 17B .

The flash 804 is disposed on the upper front of the digital camera, and emits auxiliary light when the release button is pressed and the shutter is opened when the brightness of the subject is not strong enough.

The lens 805 is disposed on the front of the digital camera and is composed of a focus lens, a zoom lens, and the like, and the lens 805, a shutter and a diaphragm not shown constitute a photographic optical system. In addition, an imaging element such as a CCD (Charge Coupled Device; Charge Coupled Device) is arranged behind the lens 805 .

The lens barrel 806 moves the position of the lens 805 to adjust the focus of a focus lens, a zoom lens, etc., and when shooting, the lens 805 is moved forward by pushing out the lens barrel 806 . Also, when carrying, the lens 805 is moved backward into a compact state. Note that in this embodiment, a structure is adopted in which the lens barrel 806 is pushed out to zoom in and out of the shooting target, however, it is not limited to this structure, and it may be possible to use the structure of the photographing optical system in the frame body 807 even if the lens barrel 806 is not pushed out. A digital camera capable of zooming.

The eyepiece viewfinder 811 is provided on the upper back of the digital camera, and is a window provided for viewing with the eyes when checking the shooting range or the focus position.

The operation buttons 813 are buttons for various functions provided on the back of the digital camera, and are composed of setting buttons, menu buttons, display buttons, function buttons, selection buttons, and the like.

By combining the photoelectric conversion device of the present invention in the camera shown in FIGS. 17A and 17B , the photoelectric conversion device can sense the presence of light and the intensity of light, thereby making it possible to adjust the exposure of the camera and the like.

In addition, the photoelectric conversion device of the present invention can be applied to other electronic equipment, such as projection TV sets and navigation systems. That is to say, the photoelectric conversion device of the present invention can be applied to any device that needs to detect light.

This application is based on Japanese Patent Application Serial No. 2007-079763 filed in Japan Patent Office on March 26, 2007, the entire contents of which are incorporated herein by reference.

Claims (14)

1. a semiconductor device, comprising:

Be connected to the first terminal of the first power supply, this first terminal supplies the first current potential;

Be connected to the photo-electric conversion element of described the first terminal, this photo-electric conversion element exports the first voltage;

Comprise the reference crystal pipe of first grid electrode, the first drain electrode and the first source electrode, described first grid electrode and described first drain electrode are connected to described photo-electric conversion element, and described reference crystal pipe exports the first electric current according to described first voltage being applied to described first grid electrode from described first source electrode;

Be connected to described the first terminal and with arranged side by side first the connecting up of described photo-electric conversion element;

Comprise the amplifier transistor of second gate electrode, the second drain electrode and the second source electrode, described second gate Electrode connection is to described photo-electric conversion element, described second drain electrode is connected to described first wiring, and described amplifier transistor exports the second electric current according to described first voltage being applied to described second gate electrode from described second source electrode;

Be connected to the second wiring of the tie point of described first source electrode and described second source electrode; And

Be connected to described second wiring the second terminal, this second terminal feeding lower than the second current potential of described first current potential,

Wherein, described first wiring and described second wiring use and formation described first grid connects up, described first source electrode is identical with described first drain electrode material and identical operation and formed,

Wherein, in described second wiring, flow through described first electric current and described second electric current, and

Wherein, described first wiring and described second wiring are set to meander-shaped.

2. semiconductor device according to claim 1, wherein said first wiring and described second wiring are arranged in individual layer.

3. semiconductor device according to claim 1,

Wherein, described semiconductor device is arranged on substrate, and

Wherein, described first wiring and described second wiring are the meander-shaped parallel with described substrate.

4. semiconductor device according to claim 1, wherein said first wiring and described second wiring at least one party be arranged in multiple layer by contact hole.

5. semiconductor device according to claim 1, wherein forms current mirroring circuit by described reference crystal pipe and described amplifier transistor.

6. semiconductor device according to claim 1, wherein said amplifier transistor comprises multiple thin-film transistor be arranged in parallel.

7. semiconductor device according to claim 1, wherein said photo-electric conversion element is the lamination be made up of p-type semiconductor, i type semiconductor and n-type semiconductor.

8. an electronic equipment, comprising:

Display part;

Drive the drive circuit of described display part; And

Be connected to the optical sensor portion of described drive circuit, described optical sensor portion comprises:

Be connected to the first terminal of the first power supply, this first terminal supplies the first current potential;

Be connected to the photo-electric conversion element of described the first terminal, this photo-electric conversion element exports the first voltage;

Comprise the reference crystal pipe of first grid electrode, the first drain electrode and the first source electrode, described first grid electrode and described first drain electrode are connected to described photo-electric conversion element, and described reference crystal pipe exports the first electric current according to described first voltage being applied to described first grid electrode from described first source electrode;

Be connected to described the first terminal and with arranged side by side first the connecting up of described photo-electric conversion element;

Comprise the amplifier transistor of second gate electrode, the second drain electrode and the second source electrode, described second gate Electrode connection is to described photo-electric conversion element, described second drain electrode is connected to described first wiring, and described amplifier transistor exports the second electric current according to described first voltage being applied to described second gate electrode from described second source electrode;

Be connected to the second wiring of the tie point of described first source electrode and described second source electrode; And

Be connected to described second wiring the second terminal, this second terminal feeding lower than the second current potential of described first current potential,

Wherein, described first wiring and described second wiring use and formation described first grid connects up, described first source electrode is identical with described first drain electrode material and identical operation and formed,

Wherein, in described second wiring, flow through described first electric current and described second electric current, and

Wherein, described first wiring and described second wiring are set to meander-shaped.

9. electronic equipment according to claim 8, wherein said first wiring and described second wiring are arranged in individual layer.

10. electronic equipment according to claim 8,

Wherein, described electronic equipment is arranged on substrate, and

Wherein, described first wiring and described second wiring are the meander-shaped parallel with described substrate.

11. electronic equipments according to claim 8, wherein said first wiring and described second wiring at least one party be arranged in multiple layer by contact hole.

12. electronic equipments according to claim 8, wherein form current mirroring circuit by described reference crystal pipe and described amplifier transistor.

13. electronic equipments according to claim 8, wherein said amplifier transistor comprises multiple thin-film transistor be arranged in parallel.

14. electronic equipments according to claim 8, wherein said photo-electric conversion element is the lamination be made up of p-type semiconductor, i type semiconductor and n-type semiconductor.