CN101246841B

CN101246841B - Method for reducing cornet shaped particles in STI HDP production

Info

Publication number: CN101246841B
Application number: CN200710037429A
Authority: CN
Inventors: 孙玲玲; 肖春光; 郑金福; 李彬
Original assignee: Semiconductor Manufacturing International Shanghai Corp
Current assignee: Semiconductor Manufacturing International Beijing Corp
Priority date: 2007-02-12
Filing date: 2007-02-12
Publication date: 2010-05-19
Anticipated expiration: 2027-02-12
Also published as: CN101246841A

Abstract

The invention discloses a method for reducing egg-roll-shaped grains during STI HDP manufacturing, comprising the steps that: step 1: the length of a wafer edge is checked and recorded; the length gotin the first step is judged whether greater than a set parameter or not, and the third step is carried out if the judging result is'Greater', or else the fourth step is carried out; step 3: the longtime preheating STI HDP manufacture is carried out; and step 4: the normal time preheating STI HDP manufacture is carried out. Since experimental verification data is fully made use of, and the preheating time of STI HDP manufacture is adjusted according to the characteristics of the wafer edge, roll-shaped grains are effectively reduced and the productivity is increased finally.

Description

The method of egg roll shape particle during a kind of STI of minimizing HDP makes

Technical field

The present invention relates to integrated circuit fabrication process, relate in particular to the method for egg roll shape particle during a kind of ST_HDP of minimizing makes in the manufacturing logic product.

Background technology

At present in the logic product manufacture; STI (shallow trench isolation; shallow trench isolation) _ HDP (high-density plasma) is a kind of method commonly used; it also is very crucial making; if when carrying out the making of this one deck, have some particles to fall at crystal column surface (Wafer), these particles can form very big influence to final products; can influence the uniformity of crystal column surface figure density, for example can form insulating barrier oxide disappearance and cause short circuit.The bigger grain type of a kind of harm is arranged in these particles: egg roll shape particle, this particle can reduce about 50% product dose rate.Therefore, solving this egg roll shape particle is very important for improving the product dose rate.

Summary of the invention

The technical problem to be solved in the present invention provides the method that a kind of STI of minimizing HDP makes middle egg roll shape particle, can effectively reduce STI HDP and make middle egg roll shape particle, and finally improve the product dose rate.

For solving the problems of the technologies described above, the method for egg roll shape particle during minimizing STI HDP of the present invention makes comprises: the length of step 1, inspection crystal round fringes, and relevant data are recorded among the MES; Whether step 2, the length by MES determining step one gained crystal round fringes greater than the parameter of setting, if greater than then entering step 3, otherwise enters step 4; Step 3, carry out making of longer warm-up time of STI HDP; Step 4, carry out making of normal warm-up time of STI HDP.The parameter of setting in the above-mentioned steps two is 360um; Refer to 30 seconds longer warm-up time in the above-mentioned steps three.

The present invention adjusts STI HDP according to some features at the first edge of crystalline substance and makes warm-up time owing to make full use of the experimental verification data, has solved the influence of egg roll shape particle to final products effectively.

Description of drawings

Fig. 1 is the flow chart of the inventive method;

Fig. 2 is the influence that produce amounts of particles different warm-up times in the specific embodiment of the invention to wafer;

Different warm-up times are to the influence of the temperature difference of reaction chamber in Fig. 3 specific embodiment of the invention;

The temperature of continuous 5 wafer reaction chamber when difference deposit warm-up time in Fig. 4 specific embodiment of the invention.

Embodiment

The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.

The inventive method derives from through a series of experimental verification, and some features that prove brilliant first edge are key factors that produce egg roll shape particle, have proposed the effective ways that can solve egg roll shape particle accordingly.

Embodiment:

In actual production, the degree of crook at the edge of the wafer that supplier provided of different wafers can be variant.In the test that the present invention carried out, chosen wafer that four suppliers provide as a comparison, there is evident difference at the edge of the wafer that is provided by four suppliers respectively.The degree of crook of wafer can embody from the length of crystal edge, and wherein the size A1 of the crystal edge in the front of the wafer that provided of a tame supplier A is probably than other long 30um, and the size A2 of the crystal edge at the back side is probably than other long 40um simultaneously.And from present data, have only on the product of the wafer that uses supplier A this egg roll shape particle to occur.Therefore can think that the length (A1 and A2) of crystal round fringes is safe less than 360um for product, egg roll shape particle promptly can not occur.

Because the bigger wafer of linear dimension has relatively big crystal edge area, in the easier accumulation of these local films and poorer with the adhesiveness of wafer, that is to say that film is easy to break away from from wafer, these films of peeling off from wafer form some particles and are dispersed in wafer under the bombardment of ion surface, the egg roll shape particle of just on product, seeing.By observing the product that uses this wafer, can see the vestige that the film of crystal edge is peeled off at the edge of wafer.

Because STI HDP makes required that temperature probably is 700 ℃, so heating earlier makes wafer reach the required temperature of thin film deposition before thin film deposition usually, by doing the experiment of different heating time, can find lengthening along with heating time, the quantity that produces particle above the wafer can reduce, as Fig. 2.When not having preheating during this step, the particle above the wafer can increase a lot, by electron microscope observation, probably has 63% to be egg roll shape particle in these particles that increased.The collection of the temperature on the reative cell top by to the STI_HDP thin film deposition time, be Fig. 3 as can be seen, increase along with heating time, it is more stable that the temperature of reaction chamber can become, as Fig. 4, when not heating this step, the experiment of carrying out continuously with 5 wafer as can be seen, the temperature in reflection chamber is more and more higher, during this step, is very stable by the reaction chamber temperature that 5 wafer in the purification cycle are carried out continuously as heating, this shows, whether the temperature when can influence thin film deposition the heating time before the thin film deposition is stable, and the stability of temperature is a key factor that causes producing egg roll shape particle during thin film deposition.Show by lot of data, just very big if the length of wafer crystal edge, produces the probability of egg roll shape particle so greater than 360um, and, can know the generation that can effectively reduce this particle heating time by prolonging from the experiment of heating time.

Therefore, the present invention has proposed the method for control STI HDP egg roll shape particle at this point, promptly before wafer is used product, can check the length of crystal round fringes earlier, relevant data can be recorded among the MES (Manufactory Enhancement System), and MES will select corresponding path to carry out the thin film deposition of STI HDP by these data then.As shown in Figure 1, specifically comprise: the length and the record of step 1, inspection crystal round fringes; Whether the length of step 2, determining step one gained crystal round fringes greater than the parameter of setting, if greater than then entering step 3, otherwise enters step 4; Step 3, carry out making of longer warm-up time of STI HDP; Step 4, carry out making of normal warm-up time of STI HDP.The parameter of setting in the above-mentioned steps two is 360um; Be 30 seconds longer warm-up time in the above-mentioned steps three.

The inventive method is through a series of experimental verification, and some features of finding brilliant first edge are key factors that produce egg roll shape particle, adjust STI HDP thus and make warm-up time, have solved the influence of egg roll shape particle to final products effectively.

Claims

1. a method that reduces shallow trench isolation egg roll shape particle in-high-density plasma is made is characterized in that, comprising:

The length of step 1, inspection crystal round fringes, relevant data are recorded to be made in the enhanced system;

Whether step 2, the length by making enhanced system determining step one gained crystal round fringes is greater than the parameter of setting, and the parameter of this setting is 360 microns, if greater than then entering step 3, otherwise enters step 4;

Step 3, carry out shallow trench isolation from the making of-high-density plasma longer warm-up time, be 30 seconds this longer warm-up time;

Step 4, carry out shallow trench isolation making from-normal warm-up time of high-density plasma.