CN101241786A - NTC thin film thermistor and preparation method thereof - Google Patents
NTC thin film thermistor and preparation method thereof Download PDFInfo
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- CN101241786A CN101241786A CNA2008100449617A CN200810044961A CN101241786A CN 101241786 A CN101241786 A CN 101241786A CN A2008100449617 A CNA2008100449617 A CN A2008100449617A CN 200810044961 A CN200810044961 A CN 200810044961A CN 101241786 A CN101241786 A CN 101241786A
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- 239000010409 thin film Substances 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000010408 film Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 5
- 230000007774 longterm Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- KFDQGLPGKXUTMZ-UHFFFAOYSA-N [Mn].[Co].[Ni] Chemical compound [Mn].[Co].[Ni] KFDQGLPGKXUTMZ-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
NTC薄膜热敏电阻及制备方法，特别涉及热敏电阻材料及器件的制作。本发明包括电阻体以及与之连接的内电极、端电极，其特征在于，所述电阻体为NTC薄膜。本发明的有益效果是：器件工艺重复性好、工艺的环境污染小。器件的长期稳定性好，响应时间短，精度高。
The invention relates to an NTC thin film thermistor and a preparation method thereof, in particular to the manufacture of a thermistor material and a device. The invention includes a resistor body and internal electrodes and terminal electrodes connected thereto, and is characterized in that the resistor body is an NTC thin film. The beneficial effect of the invention is that the repeatability of the device process is good and the environmental pollution of the process is small. The long-term stability of the device is good, the response time is short, and the precision is high.
Description
技术领域：Technical field:
本发明涉及敏感材料与传感器领域，特别涉及热敏电阻材料及器件的制作。The invention relates to the field of sensitive materials and sensors, in particular to the fabrication of thermistor materials and devices.
背景技术Background technique
NTCR(Negative Temperature Coefficient Resistor)即负温度系数电阻器，也称为NTC热敏电阻器。NTC热敏电阻通常是过渡金属氧化物半导体陶瓷材料，阻值随着温度的升高呈指数减小，是理想的温度传感器材料。NTC热敏材料种类繁多，依照材料的组成和结构可以分为氧化物系、非氧化物系等，其结构为尖晶石、萤石、钙钛矿、金红石等多种类型。NTCR (Negative Temperature Coefficient Resistor) is a negative temperature coefficient resistor, also known as an NTC thermistor. NTC thermistors are usually transition metal oxide semiconductor ceramic materials, and the resistance value decreases exponentially with the increase of temperature, which is an ideal temperature sensor material. There are many kinds of NTC thermosensitive materials, which can be divided into oxide system and non-oxide system according to the composition and structure of the material. The structure is spinel, fluorite, perovskite, rutile and other types.
NTC热敏电阻的主要用途之一是温度传感器。电阻—温度特性可使微小的温度变化转化成为电阻值的变化，形成大的信号输出，特别适于高精度测量。又由于元件体积小、形状和封装材料选择性广，特别适于高温、高湿、振动及热冲击等环境下作温度传感器。电流—电压特性可利用通过元件的电流增加到自身的发热区时，热敏电阻产生的焦耳热使整体温度上升并与环境进行热交换的特性，检测液体和气体的热耗散差别，制造汽油液位传感器以及真空、压力、流速或热传导的传感器。One of the main uses of NTC thermistors is as a temperature sensor. The resistance-temperature characteristic can convert a small temperature change into a change in resistance value, forming a large signal output, especially suitable for high-precision measurement. And because of the small size of the element, wide selection of shapes and packaging materials, it is especially suitable for temperature sensors in environments such as high temperature, high humidity, vibration and thermal shock. Current-voltage characteristics can use the characteristics of Joule heat generated by the thermistor to increase the overall temperature and heat exchange with the environment when the current passing through the element increases to its own heating area, detect the difference in heat dissipation between liquid and gas, and make gasoline Liquid level sensors as well as sensors for vacuum, pressure, flow rate or heat conduction.
随着由微机控制的智能化、自动化设备、办公用具的不断出现，使各种测量和控制更为精密和高效率。热敏电阻温度传感器具有灵敏、价廉、耐热冲击、防水蒸气、宜洗涤、无污染等特点，已经大量应用于家庭和办公环境中，如空调、冰箱、热水器、厨房设备、遥控器、无绳电话、汽车电控等。便携式电子设备中，大多采用液晶显示器(LCD)。由于LCD受环境温度的影响，其显示亮度将发生变化。为克服这一缺点，在LCD附近设置热敏元件检测温度，并相应调节LCD的供电电压，使其显示亮度保持稳定不变。此外，在个人电脑的使用中，采用热敏元件检测机内温度，调控冷却风扇的运转状况。在电子电路中，片式NTC热敏电阻作为温度补偿元件，被大量采用。With the continuous emergence of intelligent, automatic equipment and office appliances controlled by microcomputers, various measurements and controls are more precise and efficient. The thermistor temperature sensor has the characteristics of sensitivity, low price, heat shock resistance, waterproof vapor, easy to wash, and no pollution. It has been widely used in home and office environments, such as air conditioners, refrigerators, water heaters, kitchen equipment, remote controls, cordless Telephone, car electronic control, etc. Liquid crystal displays (LCDs) are mostly used in portable electronic devices. As the LCD is affected by the ambient temperature, its display brightness will change. In order to overcome this shortcoming, a thermosensitive element is installed near the LCD to detect the temperature, and the power supply voltage of the LCD is adjusted accordingly to keep the display brightness stable. In addition, in the use of a personal computer, a thermosensitive element is used to detect the temperature inside the machine and regulate the operation status of the cooling fan. In electronic circuits, chip NTC thermistors are widely used as temperature compensation components.
块材的NTC热敏电阻存在的问题是由于热容量大，因而响应时间长。由于陶瓷工艺制作的元件尺寸精度差，不易作成片式元件；高精度热敏电阻(阻值偏差≤1％)采用机械加工，因而工艺复杂。The problem with bulk NTC thermistors is the long response time due to the high heat capacity. Due to the poor dimensional accuracy of components made by ceramic technology, it is not easy to make chip components; high-precision thermistors (resistance value deviation ≤ 1%) are machined, so the process is complicated.
发明内容Contents of the invention
本发明所要解决的技术问题是，提供一种比陶瓷热敏电阻响应速度更快，阻值精度更高，成本更低，便于实现片式化大生产的NTC薄膜热敏电阻及其制备方法。The technical problem to be solved by the present invention is to provide an NTC thin film thermistor with faster response speed, higher resistance value precision, lower cost, and easy realization of large-scale chip production and its preparation method than ceramic thermistors.
本发明解决所述技术问题采用的技术方案是，NTC薄膜热敏电阻，其结构包括电阻体以及与之连接的内电极、端电极，其关键是电阻体为NTC薄膜。The technical solution adopted by the present invention to solve the technical problem is that the NTC thin film thermistor has a structure including a resistor body and internal electrodes and terminal electrodes connected thereto, and the key is that the resistor body is an NTC thin film.
更进一步的，所述内电极含有叉指电极结构。NTC薄膜位于氧化铝基片上，且电阻尺寸符合0805、0603、0402标准片式元件尺寸。Furthermore, the internal electrodes include an interdigitated electrode structure. The NTC film is located on the alumina substrate, and the resistance size conforms to the standard chip component size of 0805, 0603, and 0402.
本发明还提供一种NTC薄膜热敏电阻的制备方法，包括以下步骤：The present invention also provides a kind of preparation method of NTC thin film thermistor, comprises the following steps:
(1)NTC陶瓷靶材制备；(1) Preparation of NTC ceramic targets;
(2)将NTC材料溅射到基片上形成薄膜；(2) sputtering the NTC material onto the substrate to form a thin film;
(3)NTC薄膜退火；(3) Annealing of NTC film;
(4)采用蒸发或溅射方式制备内电极；(4) Prepare internal electrodes by evaporation or sputtering;
(5)保护层制备；(5) Preparation of protective layer;
(6)端电极制备。(6) Terminal electrode preparation.
所述步骤(4)为，采用蒸发或溅射方法制备金、铝或铜电极薄膜，然后采用光刻技术刻蚀出叉指电极。The step (4) is to prepare a gold, aluminum or copper electrode film by evaporation or sputtering, and then etch the interdigitated electrodes by photolithography.
所述步骤(5)为，保护层是以SiO2或Al2O3为绝缘层。The step (5) is that the protective layer uses SiO 2 or Al 2 O 3 as the insulating layer.
所述步骤(6)的端电极是为Ag或Ag/Ni/Sn三层端电极。The terminal electrodes in the step (6) are Ag or Ag/Ni/Sn three-layer terminal electrodes.
本发明的有益效果是：器件工艺重复性好、工艺的环境污染小。器件的长期稳定性好，响应时间短，精度高。The beneficial effect of the invention is that the repeatability of the device process is good and the environmental pollution of the process is small. The long-term stability of the device is good, the response time is short, and the precision is high.
以下结合附图和具体实施方式对本发明作进一步的说明。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.
附图说明Description of drawings
图1是本发明的制备方法示意图。Fig. 1 is a schematic diagram of the preparation method of the present invention.
图2是本发明的结构示意图。Fig. 2 is a structural schematic diagram of the present invention.
图3是本发明的叉指电极示意图。Fig. 3 is a schematic diagram of the interdigitated electrodes of the present invention.
图4的阻温特性曲线图是采用锰钴镍三元系制备的NTC薄膜热敏电阻的一个实施例。The temperature resistance characteristic curve in Fig. 4 is an embodiment of the NTC thin film thermistor prepared by manganese-cobalt-nickel ternary system.
具体实施方式Detailed ways
参见图2、图3。本发明的NTC薄膜热敏电阻，其结构包括NTC薄膜电阻体以及与之连接的内电极、端电极5。所述内电极为叉指电极3，覆盖于NTC薄膜电阻体上。NTC薄膜电阻体位于氧化铝基片1上。NTC热敏电阻尺寸符合0805、0603或0402标准片式元件尺寸。See Figure 2 and Figure 3. The structure of the NTC thin film thermistor of the present invention includes an NTC thin film resistor body and internal electrodes and terminal electrodes 5 connected thereto. The internal electrode is an interdigital electrode 3 covering the NTC thin film resistor. The NTC thin film resistor is located on the aluminum oxide substrate 1 . NTC thermistor dimensions conform to 0805, 0603 or 0402 standard chip component dimensions.
通过本发明制备的NTC薄膜热敏电阻具有器件的长期稳定性好，响应时间短，精度高等优点，如图4所示。The NTC thin film thermistor prepared by the present invention has the advantages of good long-term stability of the device, short response time and high precision, as shown in FIG. 4 .
本发明还提供一种NTC薄膜热敏电阻的制备方法，见图1，具体的说，包括：The present invention also provides a kind of preparation method of NTC thin film thermistor, see Fig. 1, specifically, comprise:
(1)NTC陶瓷靶材制备；(1) Preparation of NTC ceramic targets;
(2)在真空和保护性气体的环境中，将NTC材料溅射到基片上形成薄膜；(2) In a vacuum and protective gas environment, sputter the NTC material onto the substrate to form a thin film;
(3)NTC薄膜退火：将NTC薄膜2置入气氛炉中，加热到600～1300℃，保温，降温，取出。(3) Annealing of the NTC thin film: put the NTC thin film 2 into an atmosphere furnace, heat it to 600-1300° C., keep it warm, cool it down, and take it out.
(4)采用蒸发或溅射方式制备内电极；(4) Prepare internal electrodes by evaporation or sputtering;
(5)采用SiO2或Al2O3作为绝缘层保护层4；(5) SiO 2 or Al 2 O 3 is used as the insulating layer protective layer 4;
(6)端电极制备。端电极5为Ag或Ag/Ni/Sn三层端电极。(6) Terminal electrode preparation. The terminal electrode 5 is a three-layer terminal electrode of Ag or Ag/Ni/Sn.
Claims (7)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100449617A CN101241786A (en) | 2008-03-12 | 2008-03-12 | NTC thin film thermistor and preparation method thereof |
| US12/919,169 US20110068890A1 (en) | 2008-03-12 | 2008-12-05 | Ntc thin film thermal resistor and a method of producing it |
| PCT/CN2008/073343 WO2009111937A1 (en) | 2008-03-12 | 2008-12-05 | An ntc thin film thermal resistor and a method of producing it |
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| CNA2008100449617A CN101241786A (en) | 2008-03-12 | 2008-03-12 | NTC thin film thermistor and preparation method thereof |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009111937A1 (en) * | 2008-03-12 | 2009-09-17 | 电子科技大学 | An ntc thin film thermal resistor and a method of producing it |
| CN102052972A (en) * | 2010-11-02 | 2011-05-11 | 肇庆爱晟电子科技有限公司 | Rapid reaction NTC (Negative Temperature Coefficient) temperature sensor and manufacturing method thereof |
| CN101604565B (en) * | 2009-07-16 | 2011-08-17 | 立昌先进科技股份有限公司 | Chip type thermistor and manufacturing method thereof |
| CN103531317A (en) * | 2013-06-21 | 2014-01-22 | 兴勤（常州）电子有限公司 | Electrode-enhanced power negative-temperature thermistor and preparation process thereof |
| CN107622851A (en) * | 2017-09-25 | 2018-01-23 | 江苏时瑞电子科技有限公司 | A kind of negative tempperature coefficient thermistor with nano-particular film and preparation method thereof |
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| US12033774B2 (en) | 2019-07-05 | 2024-07-09 | Tdk Electronics Ag | NTC thin film thermistor and method for producing an NTC thin film thermistor |
| CN112735709A (en) * | 2020-12-26 | 2021-04-30 | 广东工业大学 | Film type negative temperature coefficient sensor and preparation method thereof |
| CN113483741A (en) * | 2021-06-23 | 2021-10-08 | 中国科学院南海海洋研究所 | Self-contained ocean temperature and turbulent heat dissipation rate measuring method and synchronous measuring instrument |
| CN113483741B (en) * | 2021-06-23 | 2022-05-17 | 中国科学院南海海洋研究所 | Self-contained ocean temperature and turbulent heat dissipation rate measurement method and synchronous measuring instrument |
| DE102022126526A1 (en) * | 2022-10-12 | 2024-04-18 | Tdk Electronics Ag | Sensor element and method for producing a sensor element |
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