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CN101226975A - High-power light-emitting diode chip packaging structure and manufacturing method - Google Patents

High-power light-emitting diode chip packaging structure and manufacturing method Download PDF

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Publication number
CN101226975A
CN101226975A CNA2007100042733A CN200710004273A CN101226975A CN 101226975 A CN101226975 A CN 101226975A CN A2007100042733 A CNA2007100042733 A CN A2007100042733A CN 200710004273 A CN200710004273 A CN 200710004273A CN 101226975 A CN101226975 A CN 101226975A
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electrodes
base
heat sink
emitting diode
light
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Chinese (zh)
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林诚
粟华新
根井正美
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High Power Lighting Corp
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High Power Lighting Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

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  • Led Device Packages (AREA)

Abstract

The invention discloses a packaging structure of a high-power light-emitting diode chip and a manufacturing method thereof. The packaging structure is mainly characterized by comprising a base which is formed by integrally molding a metal material and an insulating material. The metal materials respectively form a heat dissipation seat which is respectively penetrated out from the upper surface of the base and the lower surface or the side surface of the base; and a plurality of electrodes positioned at appropriate positions around the heat sink and respectively projected from the upper surface of the base and the lower surface or side surface of the base. The insulating material is positioned between the heat dissipation seat and the electrodes, so that the heat dissipation seat is insulated and bonded with any one of the electrodes and any two of the electrodes. The light emitting diode chip is adhered to the upper surface of the heat sink, the positive and negative electrodes of the light emitting diode chip are respectively connected to the upper surface electrode of the base through the wires, and the external power supply supplies current to the chip through the lower surface electrode of the base, the upper surface electrode of the base and the wires to enable the chip to emit light.

Description

高功率发光二极管芯片封装结构与制造方法 High-power light-emitting diode chip packaging structure and manufacturing method

技术领域 technical field

本发明涉及发光二极管,尤其是涉及高功率发光二极管芯片的一种封装结构及其制造方法。The invention relates to a light-emitting diode, in particular to a package structure of a high-power light-emitting diode chip and a manufacturing method thereof.

背景技术 Background technique

高功率(High Power)发光二极管是近年半导体产业快速发展的一环。有关高功率发光二极管芯片的封装,其最重要的考虑便在于如何妥善处理发光二极管芯片因高功率所产生的高温与高热,以避免其性能与寿命受到影响。High Power LEDs are a part of the rapid development of the semiconductor industry in recent years. Regarding the packaging of high-power LED chips, the most important consideration is how to properly handle the high temperature and high heat generated by the high-power LED chips, so as to avoid affecting their performance and lifespan.

图1a所示为一种现有的发光二极管芯片封装结构的侧视图。如图1a所示,发光二极管芯片(Chip或Die)16设置于以BT树脂(Bismaleimide TriazineResin)制成的基板19上。二极管芯片16的电极通过导线(Bonding Wire)13与基板19上预先设置好的、对外提供电气连接的铜箔15衔接。二极管芯片16的周围环设有反射镜14,最后再以树脂17将二极管芯片16以及导线13封固起来。此封装方式的优点是生产上适合大量发光二极管芯片的封装,因此生产成本低。但其缺点是树脂不是良好的导热材料,所以芯片16所产生的高热主要需要依赖微薄的铜箔15发散,这种电气通道和散热通道合为一体的封装方式并不适用高功率的发光二极管芯片。Fig. 1a shows a side view of a conventional LED chip packaging structure. As shown in FIG. 1a, a light emitting diode chip (Chip or Die) 16 is disposed on a substrate 19 made of BT resin (Bismaleimide Triazine Resin). The electrodes of the diode chip 16 are connected to the pre-set copper foil 15 on the substrate 19 to provide electrical connection to the outside through wires (Bonding Wire) 13 . A reflector 14 is arranged around the diode chip 16 , and finally the diode chip 16 and the wire 13 are sealed with resin 17 . The advantage of this packaging method is that it is suitable for packaging a large number of light-emitting diode chips in production, so the production cost is low. But its disadvantage is that resin is not a good heat-conducting material, so the high heat generated by the chip 16 mainly depends on the thin copper foil 15 to dissipate. This kind of packaging method that integrates the electrical channel and the heat dissipation channel is not suitable for high-power LED chips. .

美国专利6,274,924号提出一种电气通道和散热通道分离的高功率发光二极管芯片的封装结构。为方便解说起见,美国专利6,274,924号的代表图在此引用为本说明书的图1b。如图1b所示,此结构主要是将金属的导线架(LeadFrame)12封固于由绝缘耐高温塑料所构成的胶体中。发光二极管芯片16设置于导热但电气绝缘的次载具(Submount)18上,二者再一同设置于一金属的散热(Heat Sinking)元件10(通常是一铜柱)上。散热元件10上可设置一反射镜14。散热元件10连同二极管芯片16、次载具18再一起穿置于胶体中预留的空间中。二极管芯片16的电极通过导线(未图标)与导线架12连接。最后胶体之上再通过预先成型的透明胶质透光性保护镜罩20覆盖,其中并注以树脂(未图标)以保护二极管芯片16与导线。US Patent No. 6,274,924 proposes a packaging structure for high-power light-emitting diode chips in which electrical channels and heat dissipation channels are separated. For convenience of explanation, the representative figure of US Patent No. 6,274,924 is referred to as FIG. 1b of this specification. As shown in FIG. 1 b , this structure mainly seals a metal lead frame (LeadFrame) 12 in a colloid made of insulating high-temperature-resistant plastic. The LED chip 16 is disposed on a thermally conductive but electrically insulating submount 18 , and both are disposed together on a metal heat sinking element 10 (usually a copper pillar). A reflector 14 may be disposed on the heat dissipation element 10 . The heat dissipation element 10 together with the diode chip 16 and the sub-mount 18 are placed in the reserved space in the glue. Electrodes of the diode chip 16 are connected to the lead frame 12 through wires (not shown). Finally, the colloid is covered by a preformed transparent colloid light-transmitting protective mirror cover 20 , which is filled with resin (not shown) to protect the diode chip 16 and the wires.

美国专利6,274,924号所提出的结构,因为分离了电气通道和散热通道而达成相当有效的散热,但是综合以上的制程来看,美国专利6,274,924号的制程相当繁复,生产成本不易降低。而且,其中比如包覆导线架12的胶体、与透光性保护镜罩20都需要开模以塑胶射出成型的方式事先制成,开模的费用固然是一笔不小的负担,但主要的问题是生产上的弹性低,例如要在图1b所示的结构中封装一个以上的二极管芯片16,则导线架12势必要重新开模制作。The structure proposed in US Patent No. 6,274,924 achieves quite effective heat dissipation due to the separation of electrical channels and heat dissipation channels. However, considering the above manufacturing process, the manufacturing process of US Patent No. 6,274,924 is quite complicated, and the production cost is not easy to reduce. Moreover, for example, the colloid covering the lead frame 12 and the light-transmitting protective mirror cover 20 all need to be molded and made in advance by plastic injection molding. The cost of mold opening is certainly a considerable burden, but the main The problem is that the flexibility in production is low. For example, if more than one diode chip 16 is to be packaged in the structure shown in FIG.

发明内容 Contents of the invention

因此,本发明的主要目的在于提供一种高功率发光二极管芯片的封装结构及其制造方法,一方面以完全分离电气通道和散热通道的方式来达到极佳的散热效率,另一方面制程上又能大量生产以降低生产成本,以解决前述现有的封装结构在散热与制程上的不尽理想之处。Therefore, the main purpose of the present invention is to provide a high-power light-emitting diode chip packaging structure and its manufacturing method. On the one hand, the electrical channel and the heat dissipation channel are completely separated to achieve excellent heat dissipation efficiency; It can be mass-produced to reduce the production cost, so as to solve the unsatisfactory aspects of heat dissipation and manufacturing process of the aforementioned existing packaging structure.

本发明所提出的高功率发光二极管芯片封装结构,至少包含底座、反射板、发光二极管芯片、及连接发光二极管芯片的多条导线、以及保护发光二极管芯片与导线的透光性填充物或透光性保护镜罩。底座是由金属材料与绝缘材料一体成型构成而具有一扁平的形状。该金属材料分别构成一个与底座周缘保持适当距离、由底座上表面、以及底座下表面或侧面分别透出的散热座;以及多个位于该散热座四周适当位置、由底座上表面、以及底座下表面或侧面分别透出的电极。该绝缘材料位于该散热座与电极之间,致使散热座与任一电极、以及任二电极之间是绝缘黏合的。The high-power LED chip packaging structure proposed by the present invention at least includes a base, a reflector, a LED chip, and a plurality of wires connected to the LED chip, and a translucent filler or light-transmitting filler for protecting the LED chip and the wire. Protective mirror cover. The base is integrally formed of metal material and insulating material and has a flat shape. The metal material respectively constitutes a heat sink that is kept at an appropriate distance from the periphery of the base and penetrates through the upper surface of the base and the lower surface or side of the base; Electrodes that protrude from the surface or sides, respectively. The insulating material is located between the heat sink and the electrodes, so that the heat sink is insulatively bonded to any electrode and any two electrodes.

所封装的发光二极管芯片即黏固于散热座的上表面,发光二极管芯片的正负电极则以该导线分别连接到底座的上表面电极上。反射板是以一适当的结合方式固定于底座之上。反射板具有一上下贯通的穿孔,以暴露出底座散热座上的发光二极管芯片,致使发光二极管芯片所发出的光线得以向上、向外射出。反射板是以高反射率的金属材料构成,或是由非金属材料构成但在穿孔的壁面涂有高反射率的薄膜。穿孔内填充有由树脂或类似的透明材料所构成的透光性填充物或透光性保护镜罩形成光通道,同时借以保护发光二极管芯片与导线。The packaged light-emitting diode chip is glued on the upper surface of the heat sink, and the positive and negative electrodes of the light-emitting diode chip are respectively connected to the electrodes on the upper surface of the base by the wires. The reflector is fixed on the base in an appropriate combination. The reflecting plate has a through hole through up and down to expose the light emitting diode chip on the cooling seat of the base, so that the light emitted by the light emitting diode chip can be emitted upward and outward. The reflector is made of metal material with high reflectivity, or is made of non-metal material but coated with high reflectivity film on the perforated wall surface. The through hole is filled with a translucent filler made of resin or similar transparent material or a translucent protective mirror cover to form a light channel and protect the light emitting diode chip and wires at the same time.

此封装结构由于底座结构简单且采用一体成型的方式,因此适合大量的生产制造。本发明所提出的生产方法,是以一大片金属板同时制作多个发光二极管芯片的封装结构单元的底座。该金属板是以一次蚀刻或二面分别蚀刻的方式一次形成这些封装结构单元底座的散热座与电极图案,然后在散热座与电极间填充绝缘材料,在底座上面黏合反射板,之后在散热座上表面固晶、用导线将芯片与底座上表面电极连接、在反射板穿孔内填充透光性材料,最后再将各个封装结构单元切割分离开来。This packaging structure is suitable for mass production because the base structure is simple and integrally formed. The production method proposed by the present invention uses a large metal plate to simultaneously manufacture the bases of the packaging structural units of a plurality of light-emitting diode chips. The metal plate forms the heat sink and electrode pattern of the base of these packaged structural units by etching once or separately on both sides, and then fills the insulating material between the heat sink and the electrode, and glues the reflector on the base, and then the heat sink The upper surface is solidified, the chip is connected to the upper surface electrode of the base with wires, the light-transmitting material is filled in the through hole of the reflector, and finally each package structure unit is cut and separated.

请配合所附附图、实施例的详细说明及申请专利范围,将详细描述上述及本发明的其它目的与优点。然而,可以了解所附图附图仅是为说明本发明的精神,不应当视为对本发明范畴的限定。有关本发明范畴的定义,请参照权利要求书。Please cooperate with the accompanying drawings, the detailed description of the embodiments and the patent scope of the application, and describe the above and other purposes and advantages of the present invention in detail. However, it can be understood that the accompanying drawings are only for illustrating the spirit of the present invention, and should not be regarded as limiting the scope of the present invention. For the definition of the scope of the present invention, please refer to the claims.

附图说明 Description of drawings

图1a为一种现有的发光二极管芯片封装结构的侧视图;Fig. 1a is a side view of a conventional LED chip packaging structure;

图1b所示为美国专利6,274,924号的代表图;Figure 1b shows a representative drawing of US Patent No. 6,274,924;

图2a所示为本发明的封装结构一第一实施例的侧视剖面图;Figure 2a shows a side sectional view of a first embodiment of a packaging structure of the present invention;

图2b所示为本发明的封装结构一第一实施例的结构分解图;Fig. 2b shows the structural exploded view of the first embodiment of the packaging structure of the present invention;

图2c所示为本发明的封装结构一第二实施例的侧视剖面图;Figure 2c shows a side sectional view of a second embodiment of the packaging structure of the present invention;

图2d所示为本发明的封装结构一第三实施例的侧视剖面图;Figure 2d is a side sectional view of a third embodiment of a packaging structure of the present invention;

图2e所示为本发明的封装结构一第四实施例的侧视剖面图;FIG. 2e is a side sectional view of a fourth embodiment of a packaging structure of the present invention;

图2f所示为本发明的封装结构一第五实施例的侧视剖面图;FIG. 2f is a side sectional view of a fifth embodiment of the packaging structure of the present invention;

图3a所示为本发明实施于双晶封装的一实施例的底座与透视图;Figure 3a shows a base and a perspective view of an embodiment of the present invention implemented in a dual chip package;

图3b所示为本发明实施于三晶封装的一实施例的底座与透视图;Fig. 3b shows a base and a perspective view of an embodiment of the present invention implemented in a three-chip package;

图4a~4g所示为本发明的制作方法一实施例的各个步骤。4a-4g show various steps of an embodiment of the manufacturing method of the present invention.

10    散热元件        12      导线架10 heat dissipation element 12 lead frame

13    导线            14      反射镜13 Conductor 14 Reflector

15    铜箔            16      二极管芯片15 Copper Foil 16 Diode Chip

17    树脂            18      次载具17 resin 18 vehicles

20    透光性保护镜罩20 Translucent protective mirror cover

100   底座            102     散热座100 base 102 heat sink

103    反射镜面        104    电极103 mirror surface 104 electrode

105    荧光体          106    绝缘物105 Phosphor 106 Insulator

110    反射板          120    导线110 reflector 120 wire

130    透光性填充物    150    二极管芯片130 Translucent filler 150 Diode chip

160    结合剂          170    透光性保护镜罩160 Bonding agent 170 Translucent protective mirror cover

180    边框            190    金属板180 Frame 190 Metal Plate

200    封装结构单元    210    反射板板体200 Packaging structure unit 210 Reflecting plate body

具体实施方式 Detailed ways

图2a、2b所示为本发明第一实施例的侧视剖面图与结构分解图。如图所示,本实施例的高功率发光二极管芯片封装结构,至少包含底座100、反射板110、发光二极管芯片150、多条导线120、以及透光性填充物130。底座100是由散热座102、多个电极104、与绝缘物106所一体成型构成而具有一扁平的形状。散热座102与电极104都是由高导电性与高导热性的金属材料所构成。绝缘物106则是由树脂或类似的绝缘材料所构成。2a and 2b are side sectional views and structural exploded views of the first embodiment of the present invention. As shown in the figure, the high-power LED chip packaging structure of this embodiment at least includes a base 100 , a reflector 110 , a LED chip 150 , a plurality of wires 120 , and a translucent filler 130 . The base 100 is integrally formed by a heat sink 102 , a plurality of electrodes 104 , and an insulator 106 and has a flat shape. Both the heat sink 102 and the electrode 104 are made of metal materials with high conductivity and high thermal conductivity. The insulator 106 is made of resin or similar insulating material.

散热座102位于底座100的内部,与底座100的周缘保持一适当距离,并由底座100的上表面透出、以及底座100的下表面及侧面二者至少其中之一分别透出。在本实施例里,散热座102并向外侧延伸而由底座100的其它位置透出以增加散热的面积。请注意到图2a、2b所示的散热座102形状仅属示例,而非仅限于此形状。电极104则位于散热座102四周适当位置,并由底座100上表面透出,以及下表面及侧面二者至少其中一分别透出,以提供二极管芯片150对外的电气连接。同样地,图2a、2b所示的电极104形状仅属示例,而非仅限于此形状。原则上,在本实施例的单晶封装的情形下,电极104的数目为二,而在其它提供多晶封装的实施例中,电极104的数目为芯片数的二倍。底座的其它部分则由绝缘物106填充。绝缘物106因此位于散热座102与电极104之间,致使散热座102与任一电极104、以及任二电极104之间是绝缘黏合的。有关底座100的制作的方式会在后面详细解释。The heat sink 102 is located inside the base 100 , keeps an appropriate distance from the periphery of the base 100 , and protrudes from the upper surface of the base 100 and at least one of the lower surface and the side of the base 100 . In this embodiment, the heat dissipation seat 102 extends outwards and penetrates from other positions of the base 100 to increase the heat dissipation area. Please note that the shape of the heat sink 102 shown in FIGS. 2a and 2b is just an example and not limited to this shape. The electrodes 104 are located at proper positions around the heat sink 102 , and protrude from the upper surface of the base 100 , and at least one of the lower surface and the side surface respectively, so as to provide the external electrical connection of the diode chip 150 . Likewise, the shape of the electrode 104 shown in FIGS. 2a and 2b is just an example and not limited to this shape. In principle, in the case of the single crystal package of this embodiment, the number of electrodes 104 is two, while in other embodiments providing polycrystalline packages, the number of electrodes 104 is twice the number of chips. The rest of the base is filled with insulation 106 . The insulator 106 is therefore located between the heat sink 102 and the electrode 104 , so that the heat sink 102 is insulatively bonded to any electrode 104 and any two electrodes 104 . The manufacturing method of the base 100 will be explained in detail later.

反射板110具有一扁平板状,其内部适当位置处具有一适当口径且上下贯通的穿孔。反射板110是以高反射率的金属材料(例如铝)构成,或是由树脂或类似的绝缘材料构成但在穿孔壁面施以白涂装、或涂布有高反射率的薄膜(例如镀银)。反射板110是通过适当的结合剂160与底座100黏连。当反射板110由金属材料构成时,此结合剂160并提供反射板110与底座100的电极104之间的电气绝缘。反射板110的穿孔的位置与口径被适当的设置,以在与底座100黏连之后,可以暴露出底座100上表面的散热座102的透出用于固晶部分与每个电极104的透出部分的至少够用于连线部分面积。因此当发光二极管芯片150置于散热座102所透出的上表面时,其所发出的光线可以经由穿孔向上、向外射出。请注意到在本实施例里,穿孔具有一圆形的口径且是上阔下狭,然而这仅是示例,穿孔的几何形状非限于此。The reflection plate 110 has a shape of a flat plate, and a perforation hole with a proper diameter and extending upwards and downwards is formed at a proper position inside it. The reflector 110 is made of a metal material with high reflectivity (such as aluminum), or is made of resin or similar insulating material but is coated with white coating on the perforated wall surface, or is coated with a film with high reflectivity (such as silver plating). ). The reflection plate 110 is adhered to the base 100 through a suitable adhesive 160 . When the reflector 110 is made of metal material, the bonding agent 160 also provides electrical insulation between the reflector 110 and the electrode 104 of the base 100 . The position and aperture of the perforation of the reflection plate 110 are properly set, so that after bonding with the base 100, the penetration of the heat sink 102 on the upper surface of the base 100 can be exposed for the penetration of the crystal bonding part and each electrode 104. Part of the area is at least enough for wiring. Therefore, when the LED chip 150 is placed on the upper surface through which the heat sink 102 penetrates, the light emitted by it can be emitted upwards and outwards through the through holes. Please note that in this embodiment, the perforation has a circular diameter and is wide at the top and narrow at the bottom, but this is only an example, and the geometric shape of the perforation is not limited thereto.

发光二极管芯片150黏固于散热座102的上表面,发光二极管芯片150的正负电极则通过导线120分别连接到底座100的电极104上表面,借此完全分离电气通道和散热通道来达到极佳的散热效果。反射板110的穿孔内填充有由树脂或类似的透明材料所构成的透光性填充物130,以封固、保护发光二极管芯片150、导线120等封装结构内的元件。在本实施例里,填充物130是完全填满反射板110的穿孔,但在如图2c所示的第二二实施例,也可以采用如图所示的透光性保护镜罩170将发光二极管芯片150、导线120等元件保护起来或其它形状的透光性保护镜罩(如凸型镜罩)等。The LED chip 150 is bonded to the upper surface of the heat sink 102, and the positive and negative electrodes of the LED chip 150 are respectively connected to the upper surface of the electrode 104 of the base 100 through wires 120, thereby completely separating the electrical channel and the heat dissipation channel to achieve excellent performance. cooling effect. The perforations of the reflection plate 110 are filled with translucent fillers 130 made of resin or similar transparent materials to seal and protect components in the packaging structure such as the LED chips 150 and wires 120 . In this embodiment, the filler 130 is to completely fill the perforation of the reflector 110, but in the second and second embodiments shown in Figure 2c, it is also possible to use a light-transmitting protective mirror cover 170 as shown in the figure to make the luminous Diode chips 150, wires 120 and other components are protected or light-transmitting protective mirror covers (such as convex mirror covers) of other shapes.

图2d、2e、2f所示为本发明的第三、四、五实施例。如图2d所示的第三实施例,散热座102的上表面与发光二极管芯片150之间可以形成一个微凹的反射镜面103。反射镜面103可以是由具有热传导性的金属或金属化合物(如银、铝、氧化铝等)的反射材料、或是由不具热传导性的反射材料所涂布形成,以提高发光二极管芯片150封装后的亮度。图2e所示的第四实施例主要是针对以激发荧光体的方式产生白光的应用。在这个实施例里,蓝光的发光二极管芯片150是包覆在黄光荧光体105内,荧光体105被激发后产生的黄光与用于激发的蓝光互补而产生二波长的白光。或者,紫外线的发光二极管芯片150是包覆在含有红、绿、蓝三色的荧光体105内,而由荧光体105激发后产生的三色光配成三波长的白光。图2f所示的第五实施例则是第三、四实施例的综合实施。有关反射镜面103、以及荧光体105激发的技术已经有许多相关的发明与研究,而非仅限于前述的作法。Figures 2d, 2e and 2f show the third, fourth and fifth embodiments of the present invention. In the third embodiment shown in FIG. 2 d , a slightly concave reflective mirror surface 103 may be formed between the upper surface of the heat sink 102 and the LED chip 150 . The reflective mirror surface 103 can be formed by a reflective material of metal or metal compound (such as silver, aluminum, aluminum oxide, etc.) with thermal conductivity, or coated with a reflective material without thermal conductivity, so as to improve the performance of the LED chip 150 after packaging. brightness. The fourth embodiment shown in Fig. 2e is mainly aimed at the application of generating white light by exciting phosphors. In this embodiment, the blue light-emitting diode chip 150 is wrapped in the yellow phosphor 105 , and the yellow light generated by the phosphor 105 after being excited is complementary to the blue light used for excitation to generate white light with two wavelengths. Alternatively, the ultraviolet light-emitting diode chip 150 is wrapped in the red, green, and blue phosphor 105, and the three-color light generated after being excited by the phosphor 105 is converted into three-wavelength white light. The fifth embodiment shown in Fig. 2f is a comprehensive implementation of the third and fourth embodiments. There have been many related inventions and researches related to the mirror surface 103 and the excitation technology of the phosphor 105 , not limited to the aforementioned methods.

图3a、3b所示为本发明实施于双晶与三晶封装的实施例的底座100与封装完成的透视图。如图所示,本发明所提出的封装结构可以很容易用于封装更多数目的发光二极管芯片150,唯一的差别主要仅在于在底座100形成适当数目与适当位置的电极104。如图所示的多晶封装非常适合用来达成各种色光的组合,以图3b所示的三晶封装为例,这三个发光二极管芯片150可以分别是红、绿、蓝光的发光二极管芯片150,而这三种色光的混光就形成了白光。综合前述的实施例,可以很清楚的看出本发明所提出的封装结构,可以适用于各种色光的发光二极管芯片150、不设置限定发光二极管芯片150的个数、并能实现各种单光与全彩的色光组合。Figures 3a and 3b are perspective views of the submount 100 and package completion of embodiments of the present invention implemented in dual-die and triple-die packages. As shown in the figure, the packaging structure proposed by the present invention can be easily used to package a larger number of LED chips 150 , the only difference is that the appropriate number and positions of the electrodes 104 are formed on the base 100 . The polycrystalline package as shown in the figure is very suitable for achieving combinations of various colors of light. Taking the three-crystalline package shown in FIG. 3b as an example, the three LED chips 150 can be red, green, and blue LED chips respectively. 150, and the mixed light of these three colors forms white light. Based on the aforementioned embodiments, it can be clearly seen that the packaging structure proposed by the present invention can be applied to LED chips 150 of various colors, does not limit the number of LED chips 150, and can realize various single-light Combine with shades of full color.

图4a~4g所示为本发明的制作方法一实施例的各个步骤。首先,如图4a所示,准备好具高导电性与高导热性的大片金属板190,以后续用来同时形成多个封装结构单元200的底座100,形成后的这些单元底座100呈矩阵式的排列,单元底座100彼此之间是相互连接或与边框180连接。形成方法是利用一般蚀刻与机械加工的方式将各个封装结构单元底座100里未来要填充绝缘物106的部分蚀刻掉,只留下散热座102与电极104,其结果如图4b所示,接着再将蚀刻掉的部分填充以绝缘物106即完成了多个封装结构单元200的底座100的制作,其结果如图4c所示。4a-4g show various steps of an embodiment of the manufacturing method of the present invention. First, as shown in FIG. 4a, a large metal plate 190 with high electrical conductivity and high thermal conductivity is prepared to be used later to simultaneously form the bases 100 of multiple packaging structural units 200, and the formed bases 100 of these units are in a matrix form. In an arrangement, the unit bases 100 are connected to each other or to the frame 180 . The formation method is to use general etching and mechanical processing to etch away the part of the base 100 of each package structure unit that will be filled with the insulator 106 in the future, leaving only the heat sink 102 and the electrode 104. The result is shown in Figure 4b, and then Filling the etched part with the insulator 106 completes the manufacture of the base 100 of the plurality of packaging structural units 200, and the result is shown in FIG. 4c.

视单元底座100里散热座102与电极104的形状与复杂程度,前述的蚀刻与机械加工可以对金属板190的上下两主要表面一起进行,一次就完成所有单元底座100里散热座102与电极104图案的形成,然后再进行绝缘物106充填黏合。或者,如果单元底座100里散热座102与电极104的形状相当复杂的话,可以先对金属板190的一主要表面进行蚀刻与绝缘物106的填充,然后再对金属板190的另一主要表面进行蚀刻与绝缘物106的填充,即可完成所有单元底座100的制作。Depending on the shape and complexity of the heat sink 102 and the electrode 104 in the unit base 100, the aforementioned etching and machining can be performed on the upper and lower main surfaces of the metal plate 190, and all the heat sink 102 and electrodes 104 in the unit base 100 can be completed at one time. pattern formation, and then the insulator 106 is filled and bonded. Or, if the shapes of the heat sink 102 and the electrode 104 in the unit base 100 are quite complicated, one main surface of the metal plate 190 can be etched and filled with the insulator 106 first, and then the other main surface of the metal plate 190 can be etched. Etching and filling of the insulator 106 can complete the fabrication of all unit bases 100 .

接下来,如图4d所示,一个预先准备好的、包含有多个反射板110的板体210,以适当的结合剂(未图示)与图4c的成品黏着。然后,如图4e所示,对各个封装结构单元200分别进行发光二极管芯片150的固晶与打线。完成所有芯片150的固晶与打线后,即以透光性填充物130如树脂填入各个单元反射板110的穿孔里将各个封装结构单元200封固起来,其结果如图4f所示。最后,如图4g所示,将各个封装结构单元200切割分离开来。Next, as shown in FIG. 4d , a pre-prepared board body 210 including a plurality of reflective boards 110 is adhered to the finished product in FIG. 4c with an appropriate adhesive (not shown). Then, as shown in FIG. 4 e , the die-bonding and wire-bonding of the light-emitting diode chip 150 are performed on each package structure unit 200 respectively. After the die-bonding and wire bonding of all the chips 150 are completed, the through-holes of each unit reflector 110 are filled with a translucent filler 130 such as resin to seal each package structure unit 200, and the result is shown in FIG. 4f. Finally, as shown in FIG. 4g , each package structure unit 200 is cut and separated.

借助以上较佳具体实施例的详述,希望能更加清楚描述本创作的特征与精神,而并非以上述所揭露的较佳具体实施例来对本创作的范畴加以限制。相反地,其目的是希望能涵盖各种改变及具相等性的安排于本创作所欲申请的专利范围的范畴内。With the help of the above detailed description of the preferred embodiments, it is hoped that the characteristics and spirit of the invention can be described more clearly, rather than the scope of the invention is limited by the preferred embodiments disclosed above. On the contrary, the purpose is to cover various changes and equivalent arrangements within the scope of the patent application for this creation.

Claims (16)

1.一种发光二极管芯片的封装结构,其特征在于,至少包含:1. A packaging structure for a light-emitting diode chip, characterized in that it at least includes: 至少一发光二极管芯片;at least one light emitting diode chip; 一底座,由一散热座、多个电极、与一绝缘物所一体成型构成,所述散热座与所述多个电极由一金属材料所构成,所述绝缘物设置于所述散热座与所述多个电极之间,致使所述散热座与所述多个电极黏合为一体,并使所述散热座与任一所述电极、以及任二所述电极之间是电气绝缘的,所述发光二极管芯片黏固于所述散热座的上表面;A base is integrally formed by a heat sink, a plurality of electrodes, and an insulator. The heat sink and the electrodes are made of a metal material. The insulator is arranged on the heat sink and the electrodes. Between the plurality of electrodes, so that the heat sink and the plurality of electrodes are bonded together, and the heat sink is electrically insulated from any one of the electrodes, and between any two of the electrodes. The light emitting diode chip is glued to the upper surface of the heat sink; 一反射板,通过一适当的结合剂与所述底座的上表面黏合,其内部适当位置处具有一适当口径且上下贯通的一穿孔,以暴露出所述散热座的上表面以用于固晶、以及所述多个电极的上表面的至少部分面积,所述穿孔内壁具有高反射率;A reflective plate, bonded to the upper surface of the base by a suitable bonding agent, has a perforation with a proper diameter and penetrates up and down at an appropriate position inside it, so as to expose the upper surface of the heat sink for die bonding , and at least a partial area of the upper surface of the plurality of electrodes, the perforated inner wall has a high reflectivity; 多条导线,连接所述发光二极管芯片的电极与所述多个电极;以及a plurality of wires connecting the electrodes of the light emitting diode chip and the plurality of electrodes; and 一填充物,由一透光性材料构成,位于所述反射板的穿孔内以封固所述发光二极管芯片与所述多个导线。A filler, made of a light-transmitting material, is located in the through hole of the reflection plate to seal the LED chip and the plurality of wires. 2.如权利要求1所述的封装结构,其特征在于,所述底座的散热座位于所述底座内部,与所述底座的周缘保持一适当距离,并由所述底座的上表面、以及所述底座的下表面与侧面二者至少其中之一分别透出。2. The package structure according to claim 1, wherein the heat dissipation seat of the base is located inside the base, keeping an appropriate distance from the periphery of the base, and is formed by the upper surface of the base and the At least one of the lower surface and the side of the base is respectively exposed. 3.如权利要求1所述的封装结构,其特征在于,所述底座的多个电极位于所述散热座四周适当位置、并由所述底座的上表面、以及所述底座的下表面与侧面二者至少其中之一分别透出。3. The packaging structure according to claim 1, wherein the plurality of electrodes of the base are located at appropriate positions around the heat sink, and are formed by the upper surface of the base, the lower surface and the side surfaces of the base. At least one of the two is revealed separately. 4.如权利要求1所述的封装结构,其特征在于,所述反射板以一高反射率的金属材料构成。4. The package structure according to claim 1, wherein the reflector is made of a metal material with high reflectivity. 5.如权利要求1所述的封装结构,其特征在于,所述反射板以一绝缘材料构成,且所述穿孔壁面具有一高反射率的白涂装。5 . The package structure according to claim 1 , wherein the reflecting plate is made of an insulating material, and the through-hole wall has a high reflectivity white coating. 6 . 6.如权利要求1所述的封装结构,其特征在于,所述反射板以一绝缘材料构成,且所述穿孔壁面涂布有一高反射率的薄膜。6 . The package structure according to claim 1 , wherein the reflection plate is made of an insulating material, and the wall surface of the through hole is coated with a film with high reflectivity. 6 . 7.如权利要求1所述的封装结构,其特征在于,所述散热座的上表面与所述发光二极管芯片之间具有一反射镜面。7 . The package structure according to claim 1 , wherein there is a reflective mirror between the upper surface of the heat sink and the LED chip. 8.如权利要求1所述的封装结构,其特征在于,所述发光二极管芯片包覆于一适当荧光体内。8. The package structure according to claim 1, wherein the LED chip is wrapped in a suitable fluorescent body. 9.一种发光二极管芯片的封装结构制造方法,其特征在于,用于同时产生多个发光二极管芯片的封装结构,至少包含下列步骤:9. A method for manufacturing a packaging structure of a light-emitting diode chip, characterized in that the packaging structure for simultaneously producing a plurality of light-emitting diode chips at least includes the following steps: (1)在一金属板上,形成所述多个封装结构的多个单元底座,每一单元底座包含一散热座与多个电极,所述多个电极与所述散热座保持一适当距离,在每一单元底座的散热座与所述多个电极之间,由一绝缘物填充,致使每一单元底座的该散热座与所述多个电极之间,以及所述多个电极之间是绝缘黏合的;(1) On a metal plate, a plurality of unit bases of the plurality of packaging structures are formed, each unit base includes a heat sink and a plurality of electrodes, and the plurality of electrodes maintain an appropriate distance from the heat sink, Between the heat dissipation seat of each unit base and the plurality of electrodes, an insulator is filled, so that between the heat dissipation seat of each unit base and the plurality of electrodes, and between the plurality of electrodes are insulating bonded; (2)将一预先准备好的、包含有所述多个封装结构单元的多个反射板的板体,以适当的结合剂与所述步骤(1)完成的成品黏合,每一反射板内部适当位置处具有一适当口径且上下贯通、内壁具有高反射率的一穿孔,致使黏合之后,所述穿孔暴露出一对应单元的散热座的上表面与所述多个电极的上表面的至少部分面积;(2) Adhere a pre-prepared plate body of multiple reflectors containing the plurality of packaging structural units with the finished product completed in step (1) with an appropriate adhesive, and inside each reflector There is a perforation with a proper caliber at an appropriate position, which penetrates up and down and has a high reflectivity on the inner wall, so that after bonding, the perforation exposes at least part of the upper surface of the heat sink of a corresponding unit and the upper surface of the plurality of electrodes area; (3)在每一单元的所述散热座的上表面,进行至少一发光二极管芯片的固晶,并由多条导线将所述发光二极管芯片的电极分别连接到所述单元的多个电极的上表面;(3) On the upper surface of the heat sink of each unit, at least one light-emitting diode chip is solidified, and the electrodes of the light-emitting diode chip are respectively connected to the plurality of electrodes of the unit by a plurality of wires upper surface; (4)在每一反射板的所述穿孔内通过一透光性填充物包覆所述穿孔所暴露出来的发光二极管芯片、多条导线;以及(4) Cover the light-emitting diode chip and the plurality of wires exposed by the through hole with a light-transmitting filler in the through hole of each reflecting plate; and (5)将所述多个封装结构单元切割分离。(5) Cutting and separating the plurality of packaging structural units. 10.如权利要求9所述的封装结构制作方法,其特征在于,所述多个单元底座的散热座形成于所述单元底座内部,与所述单元底座的周缘保持一适当距离,并由所述单元底座的上表面、以及所述单元底座的下表面与侧面二者至少其中之一分别透出。10. The manufacturing method of the package structure according to claim 9, wherein the heat sinks of the plurality of unit bases are formed inside the unit base, keep an appropriate distance from the periphery of the unit base, and are formed by the plurality of unit bases. The upper surface of the unit base, and at least one of the lower surface and side surfaces of the unit base are respectively exposed. 11.如权利要求9所述的封装结构制作方法,其特征在于,所述多个单元底座的多个电极形成于所述单元底座的散热座四周适当位置、并由所述单元底座的上表面、以及所述单元底座的下表面与侧面二者至少其中之一分别透出。11. The manufacturing method of the package structure according to claim 9, wherein the plurality of electrodes of the plurality of unit bases are formed at appropriate positions around the heat sink of the unit base, and are formed by the upper surface of the unit base , and at least one of the lower surface and the side surface of the unit base is respectively exposed. 12.如权利要求9所述的封装结构制作方法,其特征在于,所述步骤(1)通过蚀刻与金属加工方法,对所述金属板两个主要表面同时进行,然后再进行绝缘物充填黏合,以形成所述多个单元底座。12. The manufacturing method of the packaging structure according to claim 9, wherein the step (1) is carried out on the two main surfaces of the metal plate simultaneously by etching and metal processing, and then the insulator is filled and bonded , to form the plurality of unit bases. 13.如权利要求9所述的封装结构制作方法,其特征在于,所述步骤(1)通过蚀刻与金属加工方法,先对所述金属板的一主要表面进行与绝缘物的填充,然后再对所述金属板的另一主要表面进行与绝缘物的填充,以形成所述多个单元底座。13. The manufacturing method of the packaging structure according to claim 9, wherein in the step (1), a main surface of the metal plate is first filled with an insulator by etching and metal processing, and then The other major surface of the metal plate is filled with an insulator to form the plurality of unit bases. 14.如权利要求9所述的封装结构制作方法,其特征在于,所述反射板板体由一高反射率的金属材料构成。14. The manufacturing method of the package structure according to claim 9, wherein the reflecting plate body is made of a metal material with high reflectivity. 15.如权利要求9所述的封装结构制作方法,其特征在于,所述反射板板体由一绝缘材料构成,且每一反射板的所述穿孔壁面具有一高反射率的白涂装。15 . The manufacturing method of the packaging structure according to claim 9 , wherein the body of the reflecting plate is made of an insulating material, and the perforated wall of each reflecting plate has a white coating with high reflectivity. 16 . 16.如权利要求9所述的封装结构制作方法,其特征在于,所述反射板板体由一绝缘材料构成,且每一反射板的所述穿孔壁面涂布有一高反射率的薄膜。16 . The manufacturing method of the packaging structure according to claim 9 , wherein the reflecting plate body is made of an insulating material, and the perforated wall surface of each reflecting plate is coated with a film with high reflectivity. 16 .
CNA2007100042733A 2007-01-19 2007-01-19 High-power light-emitting diode chip packaging structure and manufacturing method Pending CN101226975A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102324426A (en) * 2011-09-30 2012-01-18 深圳市灏天光电有限公司 Novel high-power light-emitting diode (LED) package structure
CN102522477A (en) * 2011-12-23 2012-06-27 深圳市瑞丰光电子股份有限公司 Led packaging structure
CN103367602A (en) * 2012-03-27 2013-10-23 信越化学工业株式会社 Substrate for optical semiconductor device and method for manufacturing the same, and optical semiconductor device and method for manufacturing the same
CN107221594A (en) * 2017-05-26 2017-09-29 导装光电科技(深圳)有限公司 Ceramic substrate LED of one side light extraction and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102324426A (en) * 2011-09-30 2012-01-18 深圳市灏天光电有限公司 Novel high-power light-emitting diode (LED) package structure
CN102522477A (en) * 2011-12-23 2012-06-27 深圳市瑞丰光电子股份有限公司 Led packaging structure
CN103367602A (en) * 2012-03-27 2013-10-23 信越化学工业株式会社 Substrate for optical semiconductor device and method for manufacturing the same, and optical semiconductor device and method for manufacturing the same
CN107221594A (en) * 2017-05-26 2017-09-29 导装光电科技(深圳)有限公司 Ceramic substrate LED of one side light extraction and preparation method thereof
CN107221594B (en) * 2017-05-26 2020-06-02 导装光电科技(深圳)有限公司 Ceramic substrate LED lamp with single-sided light emission and preparation method thereof

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