CN101226975A - High-power light-emitting diode chip packaging structure and manufacturing method - Google Patents
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Abstract
Description
技术领域 technical field
本发明涉及发光二极管,尤其是涉及高功率发光二极管芯片的一种封装结构及其制造方法。The invention relates to a light-emitting diode, in particular to a package structure of a high-power light-emitting diode chip and a manufacturing method thereof.
背景技术 Background technique
高功率(High Power)发光二极管是近年半导体产业快速发展的一环。有关高功率发光二极管芯片的封装,其最重要的考虑便在于如何妥善处理发光二极管芯片因高功率所产生的高温与高热,以避免其性能与寿命受到影响。High Power LEDs are a part of the rapid development of the semiconductor industry in recent years. Regarding the packaging of high-power LED chips, the most important consideration is how to properly handle the high temperature and high heat generated by the high-power LED chips, so as to avoid affecting their performance and lifespan.
图1a所示为一种现有的发光二极管芯片封装结构的侧视图。如图1a所示,发光二极管芯片(Chip或Die)16设置于以BT树脂(Bismaleimide TriazineResin)制成的基板19上。二极管芯片16的电极通过导线(Bonding Wire)13与基板19上预先设置好的、对外提供电气连接的铜箔15衔接。二极管芯片16的周围环设有反射镜14,最后再以树脂17将二极管芯片16以及导线13封固起来。此封装方式的优点是生产上适合大量发光二极管芯片的封装,因此生产成本低。但其缺点是树脂不是良好的导热材料,所以芯片16所产生的高热主要需要依赖微薄的铜箔15发散,这种电气通道和散热通道合为一体的封装方式并不适用高功率的发光二极管芯片。Fig. 1a shows a side view of a conventional LED chip packaging structure. As shown in FIG. 1a, a light emitting diode chip (Chip or Die) 16 is disposed on a
美国专利6,274,924号提出一种电气通道和散热通道分离的高功率发光二极管芯片的封装结构。为方便解说起见,美国专利6,274,924号的代表图在此引用为本说明书的图1b。如图1b所示,此结构主要是将金属的导线架(LeadFrame)12封固于由绝缘耐高温塑料所构成的胶体中。发光二极管芯片16设置于导热但电气绝缘的次载具(Submount)18上,二者再一同设置于一金属的散热(Heat Sinking)元件10(通常是一铜柱)上。散热元件10上可设置一反射镜14。散热元件10连同二极管芯片16、次载具18再一起穿置于胶体中预留的空间中。二极管芯片16的电极通过导线(未图标)与导线架12连接。最后胶体之上再通过预先成型的透明胶质透光性保护镜罩20覆盖,其中并注以树脂(未图标)以保护二极管芯片16与导线。US Patent No. 6,274,924 proposes a packaging structure for high-power light-emitting diode chips in which electrical channels and heat dissipation channels are separated. For convenience of explanation, the representative figure of US Patent No. 6,274,924 is referred to as FIG. 1b of this specification. As shown in FIG. 1 b , this structure mainly seals a metal lead frame (LeadFrame) 12 in a colloid made of insulating high-temperature-resistant plastic. The
美国专利6,274,924号所提出的结构,因为分离了电气通道和散热通道而达成相当有效的散热,但是综合以上的制程来看,美国专利6,274,924号的制程相当繁复,生产成本不易降低。而且,其中比如包覆导线架12的胶体、与透光性保护镜罩20都需要开模以塑胶射出成型的方式事先制成,开模的费用固然是一笔不小的负担,但主要的问题是生产上的弹性低,例如要在图1b所示的结构中封装一个以上的二极管芯片16,则导线架12势必要重新开模制作。The structure proposed in US Patent No. 6,274,924 achieves quite effective heat dissipation due to the separation of electrical channels and heat dissipation channels. However, considering the above manufacturing process, the manufacturing process of US Patent No. 6,274,924 is quite complicated, and the production cost is not easy to reduce. Moreover, for example, the colloid covering the lead frame 12 and the light-transmitting protective mirror cover 20 all need to be molded and made in advance by plastic injection molding. The cost of mold opening is certainly a considerable burden, but the main The problem is that the flexibility in production is low. For example, if more than one
发明内容 Contents of the invention
因此,本发明的主要目的在于提供一种高功率发光二极管芯片的封装结构及其制造方法,一方面以完全分离电气通道和散热通道的方式来达到极佳的散热效率,另一方面制程上又能大量生产以降低生产成本,以解决前述现有的封装结构在散热与制程上的不尽理想之处。Therefore, the main purpose of the present invention is to provide a high-power light-emitting diode chip packaging structure and its manufacturing method. On the one hand, the electrical channel and the heat dissipation channel are completely separated to achieve excellent heat dissipation efficiency; It can be mass-produced to reduce the production cost, so as to solve the unsatisfactory aspects of heat dissipation and manufacturing process of the aforementioned existing packaging structure.
本发明所提出的高功率发光二极管芯片封装结构,至少包含底座、反射板、发光二极管芯片、及连接发光二极管芯片的多条导线、以及保护发光二极管芯片与导线的透光性填充物或透光性保护镜罩。底座是由金属材料与绝缘材料一体成型构成而具有一扁平的形状。该金属材料分别构成一个与底座周缘保持适当距离、由底座上表面、以及底座下表面或侧面分别透出的散热座;以及多个位于该散热座四周适当位置、由底座上表面、以及底座下表面或侧面分别透出的电极。该绝缘材料位于该散热座与电极之间,致使散热座与任一电极、以及任二电极之间是绝缘黏合的。The high-power LED chip packaging structure proposed by the present invention at least includes a base, a reflector, a LED chip, and a plurality of wires connected to the LED chip, and a translucent filler or light-transmitting filler for protecting the LED chip and the wire. Protective mirror cover. The base is integrally formed of metal material and insulating material and has a flat shape. The metal material respectively constitutes a heat sink that is kept at an appropriate distance from the periphery of the base and penetrates through the upper surface of the base and the lower surface or side of the base; Electrodes that protrude from the surface or sides, respectively. The insulating material is located between the heat sink and the electrodes, so that the heat sink is insulatively bonded to any electrode and any two electrodes.
所封装的发光二极管芯片即黏固于散热座的上表面,发光二极管芯片的正负电极则以该导线分别连接到底座的上表面电极上。反射板是以一适当的结合方式固定于底座之上。反射板具有一上下贯通的穿孔,以暴露出底座散热座上的发光二极管芯片,致使发光二极管芯片所发出的光线得以向上、向外射出。反射板是以高反射率的金属材料构成,或是由非金属材料构成但在穿孔的壁面涂有高反射率的薄膜。穿孔内填充有由树脂或类似的透明材料所构成的透光性填充物或透光性保护镜罩形成光通道,同时借以保护发光二极管芯片与导线。The packaged light-emitting diode chip is glued on the upper surface of the heat sink, and the positive and negative electrodes of the light-emitting diode chip are respectively connected to the electrodes on the upper surface of the base by the wires. The reflector is fixed on the base in an appropriate combination. The reflecting plate has a through hole through up and down to expose the light emitting diode chip on the cooling seat of the base, so that the light emitted by the light emitting diode chip can be emitted upward and outward. The reflector is made of metal material with high reflectivity, or is made of non-metal material but coated with high reflectivity film on the perforated wall surface. The through hole is filled with a translucent filler made of resin or similar transparent material or a translucent protective mirror cover to form a light channel and protect the light emitting diode chip and wires at the same time.
此封装结构由于底座结构简单且采用一体成型的方式,因此适合大量的生产制造。本发明所提出的生产方法,是以一大片金属板同时制作多个发光二极管芯片的封装结构单元的底座。该金属板是以一次蚀刻或二面分别蚀刻的方式一次形成这些封装结构单元底座的散热座与电极图案,然后在散热座与电极间填充绝缘材料,在底座上面黏合反射板,之后在散热座上表面固晶、用导线将芯片与底座上表面电极连接、在反射板穿孔内填充透光性材料,最后再将各个封装结构单元切割分离开来。This packaging structure is suitable for mass production because the base structure is simple and integrally formed. The production method proposed by the present invention uses a large metal plate to simultaneously manufacture the bases of the packaging structural units of a plurality of light-emitting diode chips. The metal plate forms the heat sink and electrode pattern of the base of these packaged structural units by etching once or separately on both sides, and then fills the insulating material between the heat sink and the electrode, and glues the reflector on the base, and then the heat sink The upper surface is solidified, the chip is connected to the upper surface electrode of the base with wires, the light-transmitting material is filled in the through hole of the reflector, and finally each package structure unit is cut and separated.
请配合所附附图、实施例的详细说明及申请专利范围,将详细描述上述及本发明的其它目的与优点。然而,可以了解所附图附图仅是为说明本发明的精神,不应当视为对本发明范畴的限定。有关本发明范畴的定义,请参照权利要求书。Please cooperate with the accompanying drawings, the detailed description of the embodiments and the patent scope of the application, and describe the above and other purposes and advantages of the present invention in detail. However, it can be understood that the accompanying drawings are only for illustrating the spirit of the present invention, and should not be regarded as limiting the scope of the present invention. For the definition of the scope of the present invention, please refer to the claims.
附图说明 Description of drawings
图1a为一种现有的发光二极管芯片封装结构的侧视图;Fig. 1a is a side view of a conventional LED chip packaging structure;
图1b所示为美国专利6,274,924号的代表图;Figure 1b shows a representative drawing of US Patent No. 6,274,924;
图2a所示为本发明的封装结构一第一实施例的侧视剖面图;Figure 2a shows a side sectional view of a first embodiment of a packaging structure of the present invention;
图2b所示为本发明的封装结构一第一实施例的结构分解图;Fig. 2b shows the structural exploded view of the first embodiment of the packaging structure of the present invention;
图2c所示为本发明的封装结构一第二实施例的侧视剖面图;Figure 2c shows a side sectional view of a second embodiment of the packaging structure of the present invention;
图2d所示为本发明的封装结构一第三实施例的侧视剖面图;Figure 2d is a side sectional view of a third embodiment of a packaging structure of the present invention;
图2e所示为本发明的封装结构一第四实施例的侧视剖面图;FIG. 2e is a side sectional view of a fourth embodiment of a packaging structure of the present invention;
图2f所示为本发明的封装结构一第五实施例的侧视剖面图;FIG. 2f is a side sectional view of a fifth embodiment of the packaging structure of the present invention;
图3a所示为本发明实施于双晶封装的一实施例的底座与透视图;Figure 3a shows a base and a perspective view of an embodiment of the present invention implemented in a dual chip package;
图3b所示为本发明实施于三晶封装的一实施例的底座与透视图;Fig. 3b shows a base and a perspective view of an embodiment of the present invention implemented in a three-chip package;
图4a~4g所示为本发明的制作方法一实施例的各个步骤。4a-4g show various steps of an embodiment of the manufacturing method of the present invention.
10 散热元件 12 导线架10 heat dissipation element 12 lead frame
13 导线 14 反射镜13
15 铜箔 16 二极管芯片15
17 树脂 18 次载具17 resin 18 vehicles
20 透光性保护镜罩20 Translucent protective mirror cover
100 底座 102 散热座100
103 反射镜面 104 电极103
105 荧光体 106 绝缘物105
110 反射板 120 导线110
130 透光性填充物 150 二极管芯片130
160 结合剂 170 透光性保护镜罩160
180 边框 190 金属板180
200 封装结构单元 210 反射板板体200
具体实施方式 Detailed ways
图2a、2b所示为本发明第一实施例的侧视剖面图与结构分解图。如图所示,本实施例的高功率发光二极管芯片封装结构,至少包含底座100、反射板110、发光二极管芯片150、多条导线120、以及透光性填充物130。底座100是由散热座102、多个电极104、与绝缘物106所一体成型构成而具有一扁平的形状。散热座102与电极104都是由高导电性与高导热性的金属材料所构成。绝缘物106则是由树脂或类似的绝缘材料所构成。2a and 2b are side sectional views and structural exploded views of the first embodiment of the present invention. As shown in the figure, the high-power LED chip packaging structure of this embodiment at least includes a
散热座102位于底座100的内部,与底座100的周缘保持一适当距离,并由底座100的上表面透出、以及底座100的下表面及侧面二者至少其中之一分别透出。在本实施例里,散热座102并向外侧延伸而由底座100的其它位置透出以增加散热的面积。请注意到图2a、2b所示的散热座102形状仅属示例,而非仅限于此形状。电极104则位于散热座102四周适当位置,并由底座100上表面透出,以及下表面及侧面二者至少其中一分别透出,以提供二极管芯片150对外的电气连接。同样地,图2a、2b所示的电极104形状仅属示例,而非仅限于此形状。原则上,在本实施例的单晶封装的情形下,电极104的数目为二,而在其它提供多晶封装的实施例中,电极104的数目为芯片数的二倍。底座的其它部分则由绝缘物106填充。绝缘物106因此位于散热座102与电极104之间,致使散热座102与任一电极104、以及任二电极104之间是绝缘黏合的。有关底座100的制作的方式会在后面详细解释。The
反射板110具有一扁平板状,其内部适当位置处具有一适当口径且上下贯通的穿孔。反射板110是以高反射率的金属材料(例如铝)构成,或是由树脂或类似的绝缘材料构成但在穿孔壁面施以白涂装、或涂布有高反射率的薄膜(例如镀银)。反射板110是通过适当的结合剂160与底座100黏连。当反射板110由金属材料构成时,此结合剂160并提供反射板110与底座100的电极104之间的电气绝缘。反射板110的穿孔的位置与口径被适当的设置,以在与底座100黏连之后,可以暴露出底座100上表面的散热座102的透出用于固晶部分与每个电极104的透出部分的至少够用于连线部分面积。因此当发光二极管芯片150置于散热座102所透出的上表面时,其所发出的光线可以经由穿孔向上、向外射出。请注意到在本实施例里,穿孔具有一圆形的口径且是上阔下狭,然而这仅是示例,穿孔的几何形状非限于此。The
发光二极管芯片150黏固于散热座102的上表面,发光二极管芯片150的正负电极则通过导线120分别连接到底座100的电极104上表面,借此完全分离电气通道和散热通道来达到极佳的散热效果。反射板110的穿孔内填充有由树脂或类似的透明材料所构成的透光性填充物130,以封固、保护发光二极管芯片150、导线120等封装结构内的元件。在本实施例里,填充物130是完全填满反射板110的穿孔,但在如图2c所示的第二二实施例,也可以采用如图所示的透光性保护镜罩170将发光二极管芯片150、导线120等元件保护起来或其它形状的透光性保护镜罩(如凸型镜罩)等。The
图2d、2e、2f所示为本发明的第三、四、五实施例。如图2d所示的第三实施例,散热座102的上表面与发光二极管芯片150之间可以形成一个微凹的反射镜面103。反射镜面103可以是由具有热传导性的金属或金属化合物(如银、铝、氧化铝等)的反射材料、或是由不具热传导性的反射材料所涂布形成,以提高发光二极管芯片150封装后的亮度。图2e所示的第四实施例主要是针对以激发荧光体的方式产生白光的应用。在这个实施例里,蓝光的发光二极管芯片150是包覆在黄光荧光体105内,荧光体105被激发后产生的黄光与用于激发的蓝光互补而产生二波长的白光。或者,紫外线的发光二极管芯片150是包覆在含有红、绿、蓝三色的荧光体105内,而由荧光体105激发后产生的三色光配成三波长的白光。图2f所示的第五实施例则是第三、四实施例的综合实施。有关反射镜面103、以及荧光体105激发的技术已经有许多相关的发明与研究,而非仅限于前述的作法。Figures 2d, 2e and 2f show the third, fourth and fifth embodiments of the present invention. In the third embodiment shown in FIG. 2 d , a slightly concave
图3a、3b所示为本发明实施于双晶与三晶封装的实施例的底座100与封装完成的透视图。如图所示,本发明所提出的封装结构可以很容易用于封装更多数目的发光二极管芯片150,唯一的差别主要仅在于在底座100形成适当数目与适当位置的电极104。如图所示的多晶封装非常适合用来达成各种色光的组合,以图3b所示的三晶封装为例,这三个发光二极管芯片150可以分别是红、绿、蓝光的发光二极管芯片150,而这三种色光的混光就形成了白光。综合前述的实施例,可以很清楚的看出本发明所提出的封装结构,可以适用于各种色光的发光二极管芯片150、不设置限定发光二极管芯片150的个数、并能实现各种单光与全彩的色光组合。Figures 3a and 3b are perspective views of the
图4a~4g所示为本发明的制作方法一实施例的各个步骤。首先,如图4a所示,准备好具高导电性与高导热性的大片金属板190,以后续用来同时形成多个封装结构单元200的底座100,形成后的这些单元底座100呈矩阵式的排列,单元底座100彼此之间是相互连接或与边框180连接。形成方法是利用一般蚀刻与机械加工的方式将各个封装结构单元底座100里未来要填充绝缘物106的部分蚀刻掉,只留下散热座102与电极104,其结果如图4b所示,接着再将蚀刻掉的部分填充以绝缘物106即完成了多个封装结构单元200的底座100的制作,其结果如图4c所示。4a-4g show various steps of an embodiment of the manufacturing method of the present invention. First, as shown in FIG. 4a, a
视单元底座100里散热座102与电极104的形状与复杂程度,前述的蚀刻与机械加工可以对金属板190的上下两主要表面一起进行,一次就完成所有单元底座100里散热座102与电极104图案的形成,然后再进行绝缘物106充填黏合。或者,如果单元底座100里散热座102与电极104的形状相当复杂的话,可以先对金属板190的一主要表面进行蚀刻与绝缘物106的填充,然后再对金属板190的另一主要表面进行蚀刻与绝缘物106的填充,即可完成所有单元底座100的制作。Depending on the shape and complexity of the
接下来,如图4d所示,一个预先准备好的、包含有多个反射板110的板体210,以适当的结合剂(未图示)与图4c的成品黏着。然后,如图4e所示,对各个封装结构单元200分别进行发光二极管芯片150的固晶与打线。完成所有芯片150的固晶与打线后,即以透光性填充物130如树脂填入各个单元反射板110的穿孔里将各个封装结构单元200封固起来,其结果如图4f所示。最后,如图4g所示,将各个封装结构单元200切割分离开来。Next, as shown in FIG. 4d , a
借助以上较佳具体实施例的详述,希望能更加清楚描述本创作的特征与精神,而并非以上述所揭露的较佳具体实施例来对本创作的范畴加以限制。相反地,其目的是希望能涵盖各种改变及具相等性的安排于本创作所欲申请的专利范围的范畴内。With the help of the above detailed description of the preferred embodiments, it is hoped that the characteristics and spirit of the invention can be described more clearly, rather than the scope of the invention is limited by the preferred embodiments disclosed above. On the contrary, the purpose is to cover various changes and equivalent arrangements within the scope of the patent application for this creation.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102324426A (en) * | 2011-09-30 | 2012-01-18 | 深圳市灏天光电有限公司 | Novel high-power light-emitting diode (LED) package structure |
CN102522477A (en) * | 2011-12-23 | 2012-06-27 | 深圳市瑞丰光电子股份有限公司 | Led packaging structure |
CN103367602A (en) * | 2012-03-27 | 2013-10-23 | 信越化学工业株式会社 | Substrate for optical semiconductor device and method for manufacturing the same, and optical semiconductor device and method for manufacturing the same |
CN107221594A (en) * | 2017-05-26 | 2017-09-29 | 导装光电科技(深圳)有限公司 | Ceramic substrate LED of one side light extraction and preparation method thereof |
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2007
- 2007-01-19 CN CNA2007100042733A patent/CN101226975A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102324426A (en) * | 2011-09-30 | 2012-01-18 | 深圳市灏天光电有限公司 | Novel high-power light-emitting diode (LED) package structure |
CN102522477A (en) * | 2011-12-23 | 2012-06-27 | 深圳市瑞丰光电子股份有限公司 | Led packaging structure |
CN103367602A (en) * | 2012-03-27 | 2013-10-23 | 信越化学工业株式会社 | Substrate for optical semiconductor device and method for manufacturing the same, and optical semiconductor device and method for manufacturing the same |
CN107221594A (en) * | 2017-05-26 | 2017-09-29 | 导装光电科技(深圳)有限公司 | Ceramic substrate LED of one side light extraction and preparation method thereof |
CN107221594B (en) * | 2017-05-26 | 2020-06-02 | 导装光电科技(深圳)有限公司 | Ceramic substrate LED lamp with single-sided light emission and preparation method thereof |
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