CN101221949B - Face-centered cubic structure capacitor and manufacturing method thereof - Google Patents
Face-centered cubic structure capacitor and manufacturing method thereof Download PDFInfo
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- CN101221949B CN101221949B CN2007100007227A CN200710000722A CN101221949B CN 101221949 B CN101221949 B CN 101221949B CN 2007100007227 A CN2007100007227 A CN 2007100007227A CN 200710000722 A CN200710000722 A CN 200710000722A CN 101221949 B CN101221949 B CN 101221949B
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Abstract
The invention discloses a face-centered cubic structure capacitor and a manufacturing method thereof, wherein the face-centered cubic structure capacitor is composed of a first metal layer, a second metal layer and a connecting layer for connecting the first metal layer and the second metal layer, wherein the first metal layer is composed of a plurality of first metal wires, a plurality of second metal wires and a plurality of first metal blocks, the first metal wires and the second metal wires are mutually crossed to form a grid structure, and each first metal block is arranged in a grid of the grid structure; the second metal layer is composed of a plurality of third and fourth metal wires and a plurality of second metal blocks, the third and fourth metal wires are mutually crossed to form a grid structure, and each second metal block is arranged in a grid of the grid structure; the connecting layer is composed of a plurality of third metal blocks and fourth metal blocks, each third metal block is connected with the intersection of each first metal block and the third metal line, each fourth metal block is connected with the intersection of each second metal block and the first metal line, and each fourth metal block is connected with the intersection of each second metal block and the second metal line.
Description
Technical field
The present invention relates to a kind of electric capacity, particularly relate to a kind of the utilization with the lateral electric fields between layer metal wire and the line to constitute the face-centred cubic structure capacitor (Face Center Cube Capacitor) of capacitance structure.
Background technology
SOC (system on a chip) (SOC) technical development now reaches its maturity, the circuit integrated complexity of IC, and the component count that unit are is held increases thereupon, manyly needs external passive component because of area is excessive in the past, as electric capacity, inductance etc., must be integrated in the one chip.
At integrated circuit layout, use the different layers metal to form capacity plate antenna, this kind utilizes the vertical direction electric field, and along with effective line width is more and more littler, its shared chip area also can rise thereupon.In addition, under the situation that live width is dwindled, in limited area or volume, reach identical capacitance, also be a big technical problem of integrated circuit layout, so known technology discloses many solutions.
No. 5208725 a kind of capacitance structure of patent disclosure of the U.S. for example, this capacitance structure has first conductive layer and second conductive layer, and each conductive layer is made up of several list structures, and each list structure is parallel to each other.Its major technology is characterised in that the use finger, and utilizes side direction and vertical electric field, improves capacitance density.
No. 6037621 a kind of capacitance structure of patent disclosure of the U.S., have last metal level and lower metal layer, dispose an island metal array between the last lower metal layer, each metal island be connected to metal level and lower metal layer one of them, its major technology characteristic use metal and intermetallic guide hole (Via) are realized the metallic island array, and utilize side direction and vertical electric field, improve capacitance density.
No. 6297524 disclosed capacitance structure of patent of the U.S., form by first conductive layer and at least one second conductive layer, this conductive layer is conductive concentric annular line, and with the mode storehouse of concentric annular, each conductive layer is then connected by conductive guide hole (VIA).The major technique characteristic use concentric annular structure of this patent, and use lateral electric fields, and run through upper/lower layer metallic by guide hole (Via), to improve capacitance density.
No. 6410954 disclosed capacitance structure of patent of the U.S. is made up of first conductive layer and at least one second conductive layer, and this conductive layer is the concentric line of open loop shape structure, and second conductive layer is covered in first conductive layer.The major technique feature of this patent is utilized the concentric annular structure equally, and by metal is staggered up and down, utilizes side direction and vertical electric field, to improve capacitance density.
The U.S. discloses No. 20040036143 application case in early days and proposes a kind of capacitance structure, its on a substrate with inside and outside two vertical panels, and vertical panel defines a network in addition, and a level board is set simultaneously, with the parasitic capacitance of avoiding being produced between substrate and the inside and outside vertical panel.Its major technology is characterised in that the employing network, utilizes lateral electric fields, to improve capacitance density.
No. 6737698 disclosed capacitance structure of patent of the U.S., its major technology is characterised in that the use shielding construction, and electric field is limited between two shieldings.
No. 6765778 disclosed capacitance structure of patent of the U.S., it is made up of the array storehouse, the most close first storehouse of second storehouse wherein, and the 3rd storehouse is second close first storehouse, these three storehouses have defined the summit of an equilateral triangle, and this triangle is formed in the plane vertical with this storehouse.Its major technology is characterised in that with hexagonal vertical stack structure, and the use lateral electric fields, to improve capacitance density.
The U.S. discloses No. 20040174655 application case in early days and discloses a kind of capacitance structure, it is mainly formed by two-layer finger is interlaced, its major technology is characterised in that the use finger, it is staggered by levels finger-like is met at right angles, reduce the state that do not match of interlayer metal, to improve capacitance density.
The U.S. discloses No. 20050280060 application case in early days and proposes a kind of capacitance structure, it is disposed in concentric nido mode by interior box-like electric capacity and outer box-like electric capacity, its major technology is characterised in that utilizes the concentric annular structure, utilizes lateral electric fields to improve capacitance density.
Summary of the invention
The object of the present invention is to provide a kind of face-centred cubic structure capacitor and manufacture method thereof, utilize lateral electric fields to realize electric capacity, under the situation that effective line width reduces, can improve the capacitance of unit volume, so as to improving capacitance density with layer metal wire and line.
To achieve these goals, the invention provides a kind of face-centred cubic structure capacitor, articulamentum by a first metal layer, one second metal level and the connection the first metal layer and second metal level is formed, wherein the first metal layer is made up of several first metal wires, several second metal wires and several first metal derbies, this first metal wire intersects to form a network mutually with this second metal wire, and each this first metal derby is arranged in each grid of this network; And second metal level is made up of several the 3rd metal wires, several the 4th metal wires and several second metal derbies, the 3rd metal wire intersects to form a network mutually with the 4th metal wire, and each this second metal derby is arranged in each grid of this network; Articulamentum then is made up of several the 3rd metal derbies and several the 4th metal derbies, wherein each the 3rd metal derby connects the infall of each this first metal derby and the 3rd metal wire and the 4th metal wire, and each the 4th metal derby connects the infall of each this second metal derby and this first metal wire and this second metal wire.
To achieve these goals, the invention provides a kind of face-centred cubic structure capacitor, formed by several layers of the first metal layer, several layers second metal levels and the articulamentum that connects the first metal layer and second metal level; Wherein several layers of the first metal layer are made up of several first metal wires, several second metal wires and several first metal derbies, this first metal wire intersects to form a network mutually with this second metal wire, and each this first metal derby is arranged in each grid of this network; And several layers second metal levels are made up of several the 3rd metal wires, several the 4th metal wires and several second metal derbies, the 3rd metal wire intersects to form a network mutually with the 4th metal wire, each this second metal derby is arranged in each grid of this network, and wherein each this first metal layer and each this second metal level are staggered; Articulamentum is made up of several the 3rd metal derbies and several the 4th metal derbies, wherein each the 3rd metal derby connects the infall of each this first metal derby and the 3rd metal wire and the 4th metal wire, and each the 4th metal derby connects the infall of each this second metal derby and this first metal wire and this second metal wire.
To achieve these goals, the invention provides a kind of manufacture method of face-centred cubic structure capacitor, at first form a first metal layer, this the first metal layer is by several first metal wires, several second metal wires, form with several first metal derbies, this first metal wire and this second metal wire intersect mutually forming a network, and this first metal derby is arranged at this first metal wire and this second metal wire and intersects mutually in formed each network; Form a contact layer again, this contact layer is made up of several the 3rd metal derbies and several the 4th metal derbies, and wherein each the 3rd metal derby connects each this first metal derby, and each the 4th metal derby connects the infall of this first metal wire and this second metal wire; Form one second metal level at last, this second metal level is made up of several the 3rd metal wires, several the 4th metal wires and several second metal derbies, the 3rd metal wire intersects to form a network mutually with the 4th metal wire, second metal derby is arranged at the 3rd metal wire and the 4th metal wire and intersects mutually in formed each network, wherein this second metal derby is connected with the 4th metal derby of this articulamentum, and the 3rd metal wire is connected with the 3rd metal derby of this articulamentum with the 4th metal wire.
Capacitance structure disclosed according to the present invention and manufacture method thereof can be issued to the utilization of full blast at limited bulk, improve general capacity plate antenna shared volume or the excessive problem of area in chip of adopting.
In addition, the tridimensional network that it adopted can effectively utilize the electric field of all directions, can obtain higher capacitance under equal volume, can reduce chip area relatively, and then reduces manufacturing cost.For following SOC technical development and application, can more efficient passive component be integrated into, have actively and the essence enhancing efficiency.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is the structural representation of face-centred cubic structure capacitor disclosed in this invention;
Fig. 2 A to Fig. 2 C is for making the light shield schematic diagram of face-centred cubic structure capacitor disclosed in this invention;
Fig. 3 is the structural representation of face-centred cubic structure capacitor disclosed in this invention;
Fig. 4 A to Fig. 4 E is the manufacturing process of face-centred cubic structure capacitor disclosed in this invention.
Wherein, Reference numeral:
100 the first metal layers
200 second metal levels
300 articulamentums
110 first metal wires
120 second metal wires
130 first metal derbies
210 the 3rd metal wires
220 the 4th metal wires
230 second metal derbies
310 the 3rd metal derbies
320 the 4th metal derbies
400 substrates
410 dielectric materials
420 dielectric layers
411 guide holes
Embodiment
Please also refer to Fig. 1 and Fig. 2 A to Fig. 2 C, face-centred cubic structure capacitor disclosed in this invention is described.Fig. 1 is the structural representation of face-centred cubic structure capacitor disclosed in this invention.Fig. 2 A to Fig. 2 C is for making the light shield schematic diagram of face-centred cubic structure capacitor disclosed in this invention, herein in order to aid illustration structure shown in Figure 1.
As shown in the figure, face-centred cubic structure capacitor mainly is made up of three-decker, is respectively the first metal layer 100, second metal level 200 and articulamentum 300.
The first metal layer 100 is made up of with several first metal derbies 130 several first metal wires 110, several second metal wires 120.First metal wire 110 intersects to form a network mutually with second metal wire 120, be square crossing in this embodiment, but be not must square crossing, as long as first metal wire 110 intersects to form a network mutually with second metal wire 120.130 of first metal derbies are arranged at first metal wire 110 and second metal wire 120 and intersect mutually in formed each network.This first metal wire is parallel to each other to each other, and this second metal wire is parallel to each other to each other.
By the first metal layer 100, second metal level, 200 formed networks, and the articulamentum 300 connection the first metal layer 100 and second metal levels 200, to form an electric capacity.Capacitance structure disclosed in this invention by realizing electric capacity with lateral electric fields between layer metal wire and the line, therefore, along with the reduction of effective line width, can promote the capacitance under the unit are.
Figure 1 shows that a structure after simplifying, extensibility of structure with Fig. 1, can get the three-dimensional capacitance structure of a reality, it is formed by repeating the first metal layer 100, second metal level 200 and articulamentum 300, wherein each the first metal layer 100 is staggered with each second metal level 200, and each articulamentum 300 connects each the first metal layer 100 and each second metal level 200.
Though not shown in the figures, the space between the metal wire is filled up by dielectric material.
In integrated circuit layout, often use the different layers metal to form capacity plate antenna, this kind electric capacity utilizes the electric field of vertical direction, however along with effective line width is more and more littler, its shared chip area ratio also significantly rises thereupon.
Face-centred cubic structure capacitor disclosed in this invention can utilize the CMOS technology of standard to finish, and please refer to Fig. 4 A to Fig. 4 D, is the exemplary process flow of face-centred cubic structure capacitor disclosed in this invention.Fig. 4 A to Fig. 4 D with the section of Fig. 1 be example as an illustration, and cooperate with reference to figure 2A to Fig. 2 C simultaneously.
Please refer to Fig. 4 A, this electric capacity is formed on the substrate 400, in one embodiment, may be formed with other assembly or circuit on the substrate 400, is simplified illustration, and these assemblies or circuit do not add explanation and diagram.
Form the first metal layer 100 earlier, with the section of Fig. 1, the first metal layer 100 comprises second metal wire 120 and first metal derby 130.But in fact, be the pattern shown in Fig. 2 A, just form a first metal layer 100, this metal level 100 is made up of with several first metal derbies 130 several first metal wires 110, several second metal wires 120, and first metal wire 110 and second metal wire 120 intersect mutually forming a network, and 130 of first metal derbies are arranged at that first metal wire 110 and second metal wire 120 are mutual to intersect in formed each network.Then in the space of the first metal layer 100, insert dielectric material 410.
In another embodiment, also can form a dielectric layer earlier, and the mask with Fig. 2 A carries out exposure imaging on this dielectric layer, will form the partially-etched of first metal wire 110, second metal wire 120 and first metal derby 130 and come out, and metal material is deposited to corresponding position again.
With reference to figure 4B to Fig. 4 D, then form contact layer 300, it forms dielectric layer 420 earlier, and be mask with Fig. 2 B, carry out exposure imaging, stay the guide hole 411 that to insert metal, insert metal at last again, in this figure, only can see the 3rd metal derby 310, but be actually the pattern shown in Fig. 2 B, just contact layer 300, and this contact layer 300 is made up of with several the 4th metal derbies 320 several the 3rd metal derbies 310, wherein each the 3rd metal derby 310 connects each first metal derby, and each the 4th metal derby 320 connects the infall of first metal wire 110 and second metal wire 120.
In another embodiment, also can form contact layer 300 earlier, insert dielectric material again in the space of contact layer 300.
With reference to figure 4E, form second metal level 200, with Fig. 2 C is mask, carry out exposure imaging, second metal level 200 is made up of with several second metal derbies 230 several the 3rd metal wires 210, several the 4th metal wires 220, and the 3rd metal wire 210 and the 4th metal wire 220 intersect mutually forming a network, and 230 of second metal derbies are arranged at that the 3rd metal wire 210 and the 4th metal wire 220 are mutual to intersect in formed each network.Second metal derby 230 is connected with the 4th metal derby 320 of articulamentum 300, and 220 of the 3rd metal wire 210 and the 4th metal wires are connected with the 3rd metal derby 310 of articulamentum 300.The last dielectric material (not shown) of in the space of second metal level 300, inserting.
In another embodiment, also can form a dielectric layer earlier, and the mask with Fig. 2 C carries out exposure imaging on this dielectric layer, will form the partially-etched of the 3rd metal wire 310, the 4th metal wire 320 and second metal derby 330 and come out, and metal material is deposited to corresponding position again.
Form structure as shown in Figure 3, repeat above-mentioned steps and get final product.
Capacitance structure disclosed in this invention by realizing electric capacity with lateral electric fields between layer metal wire and the line, therefore, along with the reduction of effective line width, can promote the capacitance under the unit are.That is to say that under identical capacitance, capacitance structure provided by the present invention can effectively reduce the needed area of layout, and then reduce the required cost of chip manufacturing.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (6)
1. a face-centred cubic structure capacitor is characterized in that, includes:
One the first metal layer, it is made up of several first metal wires, several second metal wires and several first metal derbies, this first metal wire intersects to form a network mutually with this second metal wire, and each this first metal derby is arranged in each grid of this network;
One second metal level, it is made up of several the 3rd metal wires, several the 4th metal wires and several second metal derbies, the 3rd metal wire intersects to form a network mutually with the 4th metal wire, and each this second metal derby is arranged in each grid of this network; And
One articulamentum, form by several the 3rd metal derbies and several the 4th metal derbies, wherein each the 3rd metal derby connects the infall of each this first metal derby and the 3rd metal wire and the 4th metal wire, and each the 4th metal derby connects the infall of each this second metal derby and this first metal wire and this second metal wire;
This first metal wire is parallel to each other to each other, and this second metal wire is parallel to each other to each other;
The 3rd metal wire is parallel to each other to each other, and the 4th metal wire is parallel to each other to each other.
2. face-centred cubic structure capacitor according to claim 1 is characterized in that, this first metal wire intersects to form a network with this second metal wire is orthogonal.
3. a face-centred cubic structure capacitor is characterized in that, includes:
Several layers of the first metal layer, it is made up of several first metal wires, several second metal wires and several first metal derbies, this first metal wire intersects to form a network mutually with this second metal wire, and each this first metal derby is arranged in each grid of this network;
Several layers second metal levels, it is made up of several the 3rd metal wires, several the 4th metal wires and several second metal derbies, the 3rd metal wire intersects to form a network mutually with the 4th metal wire, each this second metal derby is arranged in each grid of this network, and wherein each this first metal layer and each this second metal level are staggered; And
Several layers of articulamentum, each this articulamentum connects each this first metal layer and each this second metal level, this articulamentum is made up of several the 3rd metal derbies and several the 4th metal derbies, wherein each the 3rd metal derby connects the infall of each this first metal derby and the 3rd metal wire and the 4th metal wire, and each the 4th metal derby connects the infall of each this second metal derby and this first metal wire and this second metal wire;
This first metal wire is parallel to each other to each other, and this second metal wire is parallel to each other to each other;
The 3rd metal wire is parallel to each other to each other, and the 4th metal wire is parallel to each other to each other.
4. face-centred cubic structure capacitor according to claim 3 is characterized in that, this first metal wire intersects to form a network with this second metal wire is orthogonal.
5. the manufacture method of a face-centred cubic structure capacitor is characterized in that, includes:
Form a first metal layer, this the first metal layer is made up of several first metal wires, several second metal wires and several first metal derbies, this first metal wire and this second metal wire intersect mutually forming a network, and this first metal derby is arranged at this first metal wire and this second metal wire and intersects mutually in formed each network;
Form an articulamentum, this articulamentum is made up of several the 3rd metal derbies and several the 4th metal derbies, and wherein each the 3rd metal derby connects each this first metal derby, and each the 4th metal derby connects the infall of this first metal wire and this second metal wire; And
Form one second metal level, this second metal level is made up of several the 3rd metal wires, several the 4th metal wires and several second metal derbies, the 3rd metal wire intersects to form a network mutually with the 4th metal wire, second metal derby is arranged at the 3rd metal wire and the 4th metal wire and intersects mutually in formed each network, wherein this second metal derby is connected with the 4th metal derby of this articulamentum, and the 3rd metal wire is connected with the 3rd metal derby of this articulamentum with the 4th metal wire;
Also include the step of inserting dielectric material in the space of this first metal layer;
Also include the step of inserting dielectric material in the space of this second metal level.
6. manufacture method according to claim 5 is characterized in that, also includes the step of inserting dielectric material in the space of this articulamentum.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100007227A CN101221949B (en) | 2007-01-10 | 2007-01-10 | Face-centered cubic structure capacitor and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2007100007227A CN101221949B (en) | 2007-01-10 | 2007-01-10 | Face-centered cubic structure capacitor and manufacturing method thereof |
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| CN101221949A CN101221949A (en) | 2008-07-16 |
| CN101221949B true CN101221949B (en) | 2011-05-25 |
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| CN2007100007227A Active CN101221949B (en) | 2007-01-10 | 2007-01-10 | Face-centered cubic structure capacitor and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE102015121044B4 (en) | 2015-12-03 | 2020-02-06 | Infineon Technologies Ag | Terminal block with two types of vias and electronic device comprising a terminal block |
| CN107154394B (en) * | 2016-03-02 | 2019-06-04 | 扬智科技股份有限公司 | Capacitive structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743671B2 (en) * | 2002-08-09 | 2004-06-01 | Ali Corporation | Metal-on-metal capacitor with conductive plate for preventing parasitic capacitance and method of making the same |
| US6765778B1 (en) * | 2003-04-04 | 2004-07-20 | Freescale Semiconductor, Inc. | Integrated vertical stack capacitor |
| CN1779966A (en) * | 2004-10-26 | 2006-05-31 | 恩益禧电子股份有限公司 | Semiconductor device |
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2007
- 2007-01-10 CN CN2007100007227A patent/CN101221949B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6743671B2 (en) * | 2002-08-09 | 2004-06-01 | Ali Corporation | Metal-on-metal capacitor with conductive plate for preventing parasitic capacitance and method of making the same |
| US6765778B1 (en) * | 2003-04-04 | 2004-07-20 | Freescale Semiconductor, Inc. | Integrated vertical stack capacitor |
| CN1779966A (en) * | 2004-10-26 | 2006-05-31 | 恩益禧电子股份有限公司 | Semiconductor device |
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