CN101211121A - Immersion type photolithography system projecting system - Google Patents
Immersion type photolithography system projecting system Download PDFInfo
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- CN101211121A CN101211121A CNA200610148822XA CN200610148822A CN101211121A CN 101211121 A CN101211121 A CN 101211121A CN A200610148822X A CNA200610148822X A CN A200610148822XA CN 200610148822 A CN200610148822 A CN 200610148822A CN 101211121 A CN101211121 A CN 101211121A
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Abstract
A projection system of an immersion lithography system comprises a projection lens, a liquid pool, a liquid supply device, a gas-liquid spray device and a substrate transfer device; wherein the gas-liquid spray device comprises a first input end for inputting carrier gas, a second input end for inputting isopropanol and an output end for outputting mixed gas-liquid of the carrier gas from the first input end and the isopropanol from the second input end, and the carrier gas is nitrogen or inert gas. The invention limits the gas-liquid spray device at the liquid pool which is arranged between the projection lens and a high molecular polymer layer on a semiconductor substrate by arranging different input ends on the gas-liquid spray device of the projection system and respectively inputting the carrier gas and the isopropanol; as the isopropanol is hydrophobic, the high molecular polymer layer on the semiconductor substrate is converted to be hydrophobic, so that the movement speed, that is, the scanning speed of a silicon chip is increased, thereby improving the production capacity.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly the optical projection system of immersion type photolithography system.
Background technology
In semi-conductor industry, in order to make littler transistor, so that on chip, form more grid and the higher transistor of manufacturing property, photoetching process must adopt short wavelength's more light to form less characteristic dimension, and people predict that 193 nanometer immersion lithography technology will replace the photoetching technique of new generation that 157 nanoimprinting technologies become the following semiconductor production of 45 nanometers.As far back as in May, 2003, Intel (Intel) recants the exploitation of 157 nano-photoetching machines, and will adopt the function of 193 nano-photoetching machines of fluorine-argon laser to extend to 45 nanometer nodes.This also just the immersion type photolithography technology obtain the result of better development, numerical aperture is that the camera lens of 0.93 193 nanometers can be realized.Follow closely after the Intel, the Nikon (Nikon) and Canon (Canon) the immersion type photolithography system plan of the ASML in Europe, Japan are kept up a steady flow of.193 nanometer immersion lithography technology become the gordian technique that realizes the following CMOS of 45 nanometers.
Though immersion lithography has received very big concern, but still face huge challenge.According to the photoetching content of 2005 editions " International Technology Roadmap for Semiconductors ", the challenge of immersion lithography is: (a) control comprises bubble and pollution owing to immerse the defective that environment causes; The development of (b) compatibility of resist and fluid or finish paint, and finish paint; (c) refractive index of resist is greater than 1.8; (d) refractive index satisfies viscosity, absorption and circulation of fluid requirement greater than 1.65 fluid; (e) refractive index satisfies the absorption and the birefringence requirement of lens design greater than 1.65 lens material.
Generally around projecting lens, form fluid Supplying apparatus in the prior art with feed fluid, 1 be illustrated with reference to the accompanying drawings, Fig. 1 provides a kind of optical projection system 100 of immersion type photolithography system, comprise: projecting lens 14 is used for the scaled high polymer layer that projects on the Semiconductor substrate of the figure of mask; Liquid cell 15c is arranged in the exposure field of projecting lens, and as the exposure media of projecting lens, described projecting lens 14 is immersed among the liquid cell 15c; Fluid Supplying apparatus 15 is positioned at the both sides of projecting lens 14, is used to provide liquid cell 15c; Gas-liquid spray equipment 17 is positioned at the periphery of fluid Supplying apparatus 15, is used to form the liquid outflow of gas curtain confined liquid pond 15c; Substrate-transferring 13, be positioned under the liquid cell 15c of gas-liquid spray equipment 17, fluid Supplying apparatus 15 and fluid Supplying apparatus generation, be used for loading and transmitting Semiconductor substrate 11, be formed with high polymer layer 12 on the Semiconductor substrate 11 on the described substrate-transferring 13; Described gas-liquid spray equipment 17 comprises the input end 17a that imports current-carrying gas and the output output terminal 17b from the current-carrying gas of input end 17a.
In the optical projection system 100 of the immersion type photolithography system of existing 193 nanometers, liquid adopts water, the input end 17a input gas of gas spray equipment 17 is nitrogen, air, synthesis of air or inert gas, spray to high molecular polymer layer 12 by output terminal 17b, the gas of output forms the liquid cell 15c sealing that the gas curtain produces fluid Supplying apparatus 15, but because high polymer layer 12 is a water wettability such as photoresist, transferring to next after optical projection system is finished place projection can form water stain at the 12 remained on surface water of the high polymer layer on the Semiconductor substrate 11 in regional, limited the sweep velocity of optical projection system, simultaneously owing to can water be arranged at high polymer layer 12 remained on surface after the exposure, need carry out baking process to Semiconductor substrate 11, increased process complexity and technology cost, the productive capacity of exposing simultaneously is lower.
Summary of the invention
The problem that the present invention solves is because the high polymer layer that is exposed is a water wettability, and in the time of exposure, the sweep velocity of the optical projection system of immersion type photolithography system is slower, and productive capacity is lower.
For addressing the above problem, the invention provides a kind of optical projection system of immersion type photolithography system, comprising: projecting lens is used for the scaled high polymer layer that projects on the Semiconductor substrate of the figure of mask; Liquid cell is arranged in the exposure field of projecting lens, as the exposure media of projecting lens; Fluid Supplying apparatus is positioned at the both sides of projecting lens, is used to provide liquid cell; The gas-liquid spray equipment is positioned at the periphery of fluid Supplying apparatus, is used to form the liquid outflow in gas curtain confined liquid pond; Substrate-transferring is positioned under the liquid cell of gas-liquid spray equipment, fluid Supplying apparatus and fluid Supplying apparatus generation, is used for loading and transmitting Semiconductor substrate, is formed with high polymer layer on the Semiconductor substrate on the described substrate-transferring; Described gas-liquid spray equipment comprises second input end of the first input end of importing current-carrying gas, input isopropyl alcohol and output from the current-carrying gas of first input end with from the output terminal of the combination gas liquid of the isopropyl alcohol of second input end, and described current-carrying gas is nitrogen or inert gas.
The flow velocity of described current-carrying gas is 10 to 100 liters/minute.
The flow velocity of described isopropyl alcohol is 0.1 to 1.0 liter/minute.
Described projecting lens realizes that by mobile substrate-transferring the speed that described substrate-transferring moves is 500 to 1000 mm/second in the enterprising line scanning of Semiconductor substrate.
Distance between described projecting lens and the substrate-transferring is 0.01 to 10mm.
Described high polymer layer is photoresist, phenylpropyl alcohol cyclobutane, polyimide, teflon.
Described macromolecule layer is a photoresist.
The liquid that described fluid Supplying apparatus provides is water.
Compared with prior art, the present invention has the following advantages: the present invention is provided with different input ends by the gas-liquid spray equipment on optical projection system, feed respectively current-carrying gas and isopropyl alcohol with the confined liquid feedway at projecting lens and the liquid cell that between the Semiconductor substrate on the substrate-transferring, forms, because isopropyl alcohol is a hydrophobicity, high polymer layer on the Semiconductor substrate is changed into hydrophobicity, make that optical projection system is that sweep velocity increases in translational speed.
The present invention is provided with different input ends by the gas-liquid spray equipment on optical projection system when exposing, feed respectively current-carrying gas and isopropyl alcohol with the confined liquid feedway at projecting lens and the liquid cell that between the Semiconductor substrate on the substrate-transferring, forms, the combination gas liquid of described current-carrying gas and isopropyl alcohol has been removed the particle on the high polymer layer surface on the Semiconductor substrate and water stain, simultaneously because isopropyl alcohol is easy to volatilization, dried up water stain that the exposure area stays, after exposure need not baking process.
Description of drawings
Fig. 1 is the optical projection system of the immersion type photolithography system of prior art.
Fig. 2 is an immersion type photolithography system of using optical projection system of the present invention.
Fig. 3 is the optical projection system of immersion type photolithography system of the present invention.
Fig. 4 is the contact contact angle test result on photoresist layer of the present invention surface.
Fig. 5 is the contact contact angle test result on the photoresist layer surface of prior art.
Embodiment
Essence of the present invention provides a kind of optical projection system, the combination gas liquid that described optical projection system adopts current-carrying gas and isopropyl alcohol to form forms the liquid cell that the gas curtain is used for the liquid cell outflow formation sealing of confined liquid feedway, and described current-carrying gas is nitrogen or inert gas.
Advantage of the present invention with reference to the accompanying drawings will be more obvious.For complete description technical scheme of the present invention, the present invention at first provides a kind of embodiment of immersion type photolithography system.
With reference to Fig. 2, immersion type photolithography system 200 mainly comprises laser source systems 201, irradiation system 202, support system 204 and optical projection system 300.
Described laser source systems 201 provides laser 210, also comprises polytype optics of laser channeling conduct, imaging or control for example optics or its combination in any of refraction type, reflective, magnetic-type, electromagnetic type, electrostatic or other types.
Described irradiation system 202 is used for and will be configured to regulate radiation laser beam 203 by light-source system 201 emitting lasers 210, can comprise various types of opticses, for example be used to guide, the optics of refractive optical components, reflection optics, magneto-optical parts, electromagnetism optics, electrostatic optics parts or other type of shaping or control radiation, perhaps its combination in any.
Described support system 205 is used to support mask plate 204, and be used for mask 202 pinpoint locating devices are connected, support system 205 can guarantee that etching system 200 is in the desired position with respect to optical projection system 300.
Described optical projection system 300 comprises various types of optical projection systems, be used for the graphic projection of mask to high polymer layer, comprise refraction type, reflective, reflected refraction formula, magnetic-type, electromagnetic type and electrostatic optical system or its combination in any, for example according to used exposing radiation or other factors as using liquid or using the situation of vacuum to determine.
Continuation is with reference to figure 2, and irradiation system 202 receptions are from the radiation laser beam 210 of laser source systems 201, and irradiation system 202 adjusting radiation laser beams 210 make it have required uniformity coefficient on xsect and intensity distributions is configured to regulate radiation laser beam 203.
Regulate radiation laser beam 203 and incide on the mask plate 204 on the supporting construction 205 (as mask platform), and carry out composition by mask plate 204 by irradiation system 202.Regulate radiation laser beam 203 and pass mask plate 204 back formation focus adjustment radiation laser beams 212, projecting lens 14 by optical projection system 300 forms exposing light beams 213 and focuses on the high polymer layer 12 on the Semiconductor substrate 11 and form exposure field, liquid cell 15c is positioned at exposure field, described projecting lens 14 is immersed among the liquid cell 15c, and described liquid cell 15c is as the media of projecting lens exposure light path; The fluid Supplying apparatus 15 that produces liquid cell 15c is positioned at the both sides of projecting lens 14; The gas-liquid spray equipment 18 that is positioned at fluid Supplying apparatus 15 peripheries simultaneously forms the liquid cell 15c outflow that gas curtain confined liquid feedway 15 produces; Described liquid cell 15c is positioned on the high polymer layer 12 on the Semiconductor substrate 11, and described Semiconductor substrate is loaded on the substrate-transferring 13.
The invention provides a kind of optical projection system of immersion type photolithography system, comprising: projecting lens is used for the scaled high polymer layer that projects on the Semiconductor substrate of the figure of mask; Liquid cell is arranged in the exposure field of projecting lens, as the exposure media of projecting lens; Fluid Supplying apparatus is positioned at the both sides of projecting lens, is used to provide liquid cell; The gas-liquid spray equipment is positioned at the periphery of fluid Supplying apparatus, is used to form the liquid outflow in gas curtain confined liquid pond; Substrate-transferring is positioned under the liquid cell of gas-liquid spray equipment, fluid Supplying apparatus and fluid Supplying apparatus generation, is used for loading and transmitting Semiconductor substrate, is formed with high polymer layer on the Semiconductor substrate on the described substrate-transferring; Described gas-liquid spray equipment comprises second input end of the first input end of importing current-carrying gas, input isopropyl alcohol and output from the current-carrying gas of first input end with from the output terminal of the combination gas liquid of the isopropyl alcohol of second input end, and described current-carrying gas is nitrogen or inert gas.
Provide optical projection system 300 structural representations of the present invention in detail with reference to Fig. 3, comprise projecting lens 14, liquid cell 15c, fluid Supplying apparatus 15, gas-liquid spray equipment 18 and substrate-transferring 13.
Described projecting lens 14 is used for the scaled high polymer layer 12 that projects on the Semiconductor substrate 11 of the figure on the mask.
Described gas-liquid spray equipment 18 is positioned at the periphery of fluid Supplying apparatus 15, is used to form the liquid outflow among the liquid cell 15c that gas curtain confined liquid feedway 15 produces; Described gas-liquid spray equipment 18 comprises that the second input end 18b of the first input end 18a that imports current-carrying gas, input isopropyl alcohol and output are from the current-carrying gas of first input end 18a with from the output terminal 18c of the combination gas liquid of the isopropyl alcohol of the second input end 18b.
Described substrate-transferring 13 is positioned at the below of the liquid cell 15c of gas-liquid spray equipment 18, fluid Supplying apparatus 15 and fluid Supplying apparatus 15 generations, be used for loading and transmit Semiconductor substrate 11, the distance between described substrate-transferring and the projecting lens is 0.01 to 10mm.Be formed with high polymer layer 12 on the described Semiconductor substrate 11.Described macromolecule layer 12 is photoresist, phenylpropyl alcohol cyclobutane, polyimide, teflon etc., and as an embodiment of the invention, described high polymer layer 12 is a photoresist.
As an embodiment of the invention, described gas-liquid spray equipment 18 is for having the pipeline of T-valve.Described first input end 18a input current-carrying gas, described current-carrying gas is nitrogen or inert gas, because the nitrogen low price adopts nitrogen in the semiconductor industry more; Described second input end 18b input isopropyl alcohol (IPA), current-carrying gas and isopropyl alcohol mix the current-carrying gas that formation has isopropyl alcohol in gas-liquid spray equipment 18, then by output terminal 18c output, because the current-carrying gas pressure of first input end 18a input is very big, on the mixed current-carrying gas that has an isopropyl alcohol is injected into high polymer layer 12 on the Semiconductor substrate 11 from output terminal 18c, form the gas curtain, block from the outflow of the liquid cell of fluid Supplying apparatus 15, make the liquid cell 15c that forms sealing in the exposure field between the high polymer layer 12 on projecting lens 14 and Semiconductor substrate 11.Because isopropyl alcohol has lower boiling point, volatilization in several seconds after being injected on the high polymer layer 12, simultaneously because isopropyl alcohol is a hydrophobicity, high polymer layer on the Semiconductor substrate 11 12 is transformed into the hydrophobicity interface by water wettability, be transferred to next at projecting lens and treat that exposure field can not stay liquid, therefore can improve the sweep velocity of described projecting lens 14 on Semiconductor substrate, the scanning of optical projection system 300 of the present invention on Semiconductor substrate is by the mobile realization of mobile substrate-transferring, the speed that described substrate-transferring 13 moves is 500 to 1000 mm/second, and promptly the sweep velocity of optical projection system 300 is 500 to 1000 mm/second.
The flow rates of the current-carrying gas of described first input end input is 10 to 100 liters/minute, and the flow range of the isopropyl alcohol of described second input end input is 0.1 to 1.0 liter/minute.
As an embodiment of the invention, when exposing, the current-carrying gas of described first input end 18a input is a nitrogen, the flow velocity of described nitrogen is 30 liters/minute, the isopropyl alcohol flow of described second input end 18b input is 0.3 liter/minute, nitrogen and isopropyl alcohol mix and form gas-liquid and be injected into high polymer layer 12 surfaces on the Semiconductor substrate 11 by output terminal 18c, the liquid cell 16 of liquid-supplying system 15 is sealed between the exposure field of the high polymer layer 12 on projecting lens 14 and the Semiconductor substrate 11, passing liquid cell 15c by the next exposing light beam of projecting lens 14 transmission exposes to high polymer layer 12, because the refraction coefficient of liquid is greater than 1, make exposing light beam form the light beam of more assembling, thereby realize high-resolution.As an embodiment of present embodiment, described liquid is water.Exposure finishes, mobile substrate-transferring 13 drives Semiconductor substrate 11 and moves, expose in next zone to high polymer layer 12 on the Semiconductor substrate 11, as embodiment of present embodiment, the translational speed of described substrate-transferring 13 is 800 mm/second.
As another embodiment of the invention, when exposing, the current-carrying gas of described first input end 18a input is a nitrogen, the flow velocity of described nitrogen is 60 liters/minute, the isopropyl alcohol flow of described second input end 18b input is 0.6 liter/minute, nitrogen and isopropyl alcohol mix and form gas-liquid and be injected into high polymer layer 12 surfaces on the Semiconductor substrate 11 by output terminal 18c, the liquid cell 16 of liquid-supplying system 15 is sealed between the exposure field of the high polymer layer 12 on projecting lens 14 and the Semiconductor substrate 11, passing liquid cell 15c by the next exposing light beam of projecting lens 14 transmission exposes to high polymer layer 12, because the refraction coefficient of liquid is greater than 1, make exposing light beam form the light beam of more assembling, thereby realize high-resolution.As an embodiment of present embodiment, described liquid is water.Exposure finishes, mobile substrate-transferring 13 drives Semiconductor substrate 11 and moves, expose in next zone to high polymer layer 12 on the Semiconductor substrate 11, as embodiment of present embodiment, the translational speed of described substrate-transferring 13 is 800 mm/second.
After above-mentioned process implementing, the formation optical method for measuring contact angle image analyzer that adopts Caesar to irrigate CAM 100 models of (KSV) company has been tested the contact angle of photoresist layer 12, the result as shown in Figure 4, as can be seen, adopt the liquid cell 15c in the exposure field between high polymer layer 12 and projecting lens 14 of the gas curtain confined liquid feedway 15 of nitrogen of the present invention and isopropyl alcohol formation, the contact angle θ on high polymer layer 12 surfaces is greater than 90 °, for the ease of contrast, the contact angle test result of high polymer layer 12 before exposure is illustrated in Fig. 5, as can be seen from Figure, before exposure, the contact angle θ on high polymer layer surface is less than 90 °, θ shows that less than 90 ° the surface is water wettability, and θ is big, and 90 ° of table surfaces are hydrophobic nature.By among Fig. 4 as can be seen, the gas curtain that adopts nitrogen of the present invention and isopropyl alcohol to form can be hydrophobic surface with the surface conversion of high polymer layer 12.Thereby can improve the sweep velocity of optical projection system.Simultaneously, the present invention is provided with different input ends by the gas-liquid spray equipment 18 on optical projection system 300 when exposing, feed current-carrying gas and isopropyl alcohol respectively with the liquid cell 15c of confined liquid feedway 15 in projecting lens 14 and formation between the Semiconductor substrate on the substrate-transferring 13 11, the mixed gas of described current-carrying gas and isopropyl alcohol has been removed the particle on high polymer layer 12 surfaces on the Semiconductor substrate 11 and water stain, simultaneously because isopropyl alcohol is easy to volatilization, dried up water stain that the exposure area stays, after exposure need not baking process.
Though the present invention discloses as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (8)
1. the optical projection system of an immersion type photolithography system comprises:
Projecting lens is used for the scaled high polymer layer that projects on the Semiconductor substrate of the figure of mask;
Liquid cell is arranged in the exposure field of projecting lens, as the exposure media of projecting lens;
Fluid Supplying apparatus is positioned at the both sides of projecting lens, is used to provide liquid cell;
The gas-liquid spray equipment is positioned at the periphery of fluid Supplying apparatus, is used to form the liquid outflow in gas curtain confined liquid pond;
Substrate-transferring is positioned under the liquid cell of gas-liquid spray equipment, fluid Supplying apparatus and fluid Supplying apparatus generation, is used for loading and transmitting Semiconductor substrate, is formed with high polymer layer on the Semiconductor substrate on the described substrate-transferring;
It is characterized in that, described gas-liquid spray equipment comprises second input end of the first input end of importing current-carrying gas, input isopropyl alcohol and output from the current-carrying gas of first input end with from the output terminal of the combination gas liquid of the isopropyl alcohol of second input end, and described current-carrying gas is nitrogen or inert gas.
2. the optical projection system of immersion type photolithography system according to claim 1, it is characterized in that: the flow velocity of described current-carrying gas is 10 to 100 liters/minute.
3. the optical projection system of immersion type photolithography system according to claim 2, it is characterized in that: the flow velocity of described isopropyl alcohol is 0.1 to 1.0 liter/minute.
4. the optical projection system of immersion type photolithography system according to claim 1, it is characterized in that: described projecting lens realizes that by mobile substrate-transferring the speed that described substrate-transferring moves is 500 to 1000 mm/second in the enterprising line scanning of Semiconductor substrate.
5. the optical projection system of immersion type photolithography system according to claim 1 is characterized in that: the distance between described projecting lens and the substrate-transferring is 0.01 to 10mm.
6. the optical projection system of immersion type photolithography system according to claim 1, it is characterized in that: described high polymer layer is photoresist, phenylpropyl alcohol cyclobutane, polyimide, teflon.
7. the optical projection system of immersion type photolithography system according to claim 6, it is characterized in that: described macromolecule layer is a photoresist.
8. the optical projection system of immersion type photolithography system according to claim 1, it is characterized in that: the liquid that described fluid Supplying apparatus provides is water.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200610148822XA CN101211121A (en) | 2006-12-28 | 2006-12-28 | Immersion type photolithography system projecting system |
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| Application Number | Priority Date | Filing Date | Title |
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| CNA200610148822XA CN101211121A (en) | 2006-12-28 | 2006-12-28 | Immersion type photolithography system projecting system |
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| CN101211121A true CN101211121A (en) | 2008-07-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102597880A (en) * | 2009-10-29 | 2012-07-18 | 株式会社V技术 | Exposure device and photo mask |
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2006
- 2006-12-28 CN CNA200610148822XA patent/CN101211121A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102597880A (en) * | 2009-10-29 | 2012-07-18 | 株式会社V技术 | Exposure device and photo mask |
| CN102597880B (en) * | 2009-10-29 | 2015-09-16 | 株式会社V技术 | Exposure device and photomask |
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