CN101207044A - Heat dissipation type semiconductor package and manufacturing method thereof - Google Patents

Abstract

The invention discloses a heat radiation type semiconductor package and a preparation method thereof, which mainly comprises the steps of accommodating a substrate which is used for connecting a chip in a bearing part in an opening of the bearing part, connecting a heat radiation sheet with a supporting part in an electric connection way to a conducting layer which is preset on the bearing part, connecting the heat radiation sheet on the semiconductor chip, forming a packaging colloid which coats the semiconductor chip and the heat radiation sheet on the substrate and the bearing part, grinding and removing the packaging colloid on the heat radiation sheet to expose the heat radiation sheet, depositing a metal protection layer on the heat radiation sheet which exposes the packaging colloid outside by utilizing an electroplating way through the conducting layer of the bearing part to prevent the exposed heat radiation sheet from being oxidized, obtaining heat generated by the semiconductor chip during operation and outwards dissipating through the heat radiation sheet, and then cutting along the peripheral dimension of the semiconductor package which is preset to be formed, so as to obtain the heat dissipation type semiconductor package of the invention.

Description

Heat dissipation type semiconductor package and manufacturing method thereof

technical field

The invention relates to a semiconductor package and its manufacturing method, in particular to a heat dissipation semiconductor package integrated with a heat dissipation structure and its manufacturing method.

Background technique

With the demand for thinner, lighter and smaller electronic products, the Ball Grid Array (BGA) Semiconductor Package (Ball Grid Array Semiconductor Package) can provide a sufficient number of input/output connections (I/O Connection) to meet the needs of high-density electronics. The demand for semiconductor chips of components (Electronic Components) and electronic circuits (Electronic Circuits) has gradually become the mainstream of packaging products. However, since this kind of semiconductor package provides higher-density electronic circuits and electronic components, it generates high heat during operation. If the heat on the surface of the chip is not released immediately, the accumulated heat will seriously affect the semiconductor. The electrical function and product stability of the chip. On the other hand, in order to prevent the internal circuit of the package from being polluted by external water and dust, the surface of the semiconductor chip must be covered with an encapsulant to insulate it. However, the encapsulation resin constituting the encapsulant is a material with poor thermal conductivity. Only 0.8w/m°K, so the heat generated on the surface of the chip laying multiple circuits cannot be effectively transferred to the outside of the atmosphere through the encapsulation gel, which often leads to heat accumulation, which puts the performance and service life of the chip to the test .

In order to solve the lack of heat dissipation of the existing ball grid array semiconductor package, a type of heat dissipation structure installed in the BGA semiconductor package emerges as the times require.

Referring to FIGS. 1A to 1C , US Pat. Nos. 6,458,626 and 6,444,498 disclose a semiconductor package in which a heat sink is directly attached to a semiconductor chip.

As shown in FIG. 1A, the semiconductor package forms an interface layer 15 with poor adhesion to the encapsulant 14 on the surface of the heat sink 11 intended to be exposed to the atmosphere, and then directly adheres the heat sink 11 to a bonding surface. Place on the semiconductor chip 10 of the substrate 13, and then carry out the molding process, so that the encapsulation compound 14 completely covers the heat sink 11 and the semiconductor chip 10, and the encapsulation compound 14 is covered on the interface layer 15 of the heat sink 11; then , carry out the cutting operation, and remove the encapsulant 14 above the heat sink 11, wherein the adhesion between the interface layer 15 (such as a gold-plated layer) formed on the heat sink 11 and the heat sink 11 is greater than that of the encapsulant 14 When the adhesion between the encapsulant 14 and the encapsulant 14 is peeled off, the interface layer 15 still remains on the heat sink 11, but due to the poor adhesion between the interface layer 15 and the encapsulant 14, the encapsulant 14 will not remain on the interface layer 15 (as shown in Figure 1B). Conversely, when the interface layer 15 formed on the heat sink 11 (such as an adhesive sheet made of polyimide resin) has less adhesion to the heat sink 11 than to the encapsulant 14 After the encapsulant 14 is peeled off, the interface layer 15 will adhere to the encapsulant 14 and be removed accordingly (as shown in FIG. 1C ).

However, in the manufacturing process of the aforementioned semiconductor package, when the cutting step is performed, because the cutting tool directly passes through the heat sink, and because the heat sink is generally made of metal materials such as copper and aluminum, when cutting with a cutting tool, it is difficult to The peripheral material of the heat sink will be pulled to produce uneven sharp-edged edges (or burrs), which will affect the appearance of the package, and will also cause too much loss of the cutting tool, resulting in a significant increase in cost, and the production efficiency cannot be greatly improved.

In addition, referring to FIGS. 2A to 2C, the heat dissipation semiconductor package disclosed in Taiwan Patent No. I255047 is to connect and electrically connect the semiconductor chip 20 to the substrate 23, and position the substrate 23 with the semiconductor chip 20 In a carrier 22 preset with an opening 220, wherein the planar size of the substrate 23 is close to the predetermined planar size of the semiconductor package; a heat sink 211 and a supporting portion 212 extending downward from the heat sink 211 are provided The heat dissipation structure 21, and the heat dissipation structure 21 is placed on the carrier 22 by its support portion 212, so that the semiconductor chip 20 is accommodated under the heat dissipation sheet 211; the molding process is carried out to place on the substrate 23 and carrier 22 to form encapsulant 24 for covering the semiconductor chip 20 and heat dissipation structure 21, wherein the plane size covered by the encapsulation compound 24 is larger than the plane size surrounded by the supporting part of the heat dissipation structure 21; and along Cutting is performed at predetermined dimensions of the semiconductor package, so as to remove portions of the encapsulant 24 and the supporting portion of the heat dissipation structure 21 that exceed the predetermined planar dimensions of the package.

However, in the aforementioned semiconductor package, because the heat dissipation structure does not directly touch the semiconductor chip, the thermal resistance is too much, and the heat dissipated by the chip is really limited.

In addition, as shown in FIGS. 3A and 3B , US Pat. No. 5,886,408 discloses a heat-dissipating semiconductor package, which places a heat-dissipating structure 31 directly on a semiconductor chip 30, and then performs packaging and molding operations to form a heat-dissipating structure 31 and The encapsulant 34 of the semiconductor chip 30 is then ground to a portion of the encapsulant 34 to expose a surface of the heat dissipation structure 31 .

However, in the aforementioned heat-dissipating semiconductor package, since the material of the heat-dissipating structure exposed from the encapsulating colloid after grinding is mainly copper metal, it is prone to oxidation reaction to produce patina during long-term exposure, which will not only affect the appearance , but also affect its heat dissipation quality.

Therefore, how to effectively solve the heat dissipation problem of the semiconductor package, and at the same time reduce the wear consumption of the cutting tool, the glue overflow on the heat dissipation structure, and the oxidation of the exposed heat dissipation structure is a major issue that the industry needs to deal with urgently.

Contents of the invention

In view of the above-mentioned problems in the prior art, the main purpose of the present invention is to provide a heat dissipation semiconductor package and its manufacturing method, which can avoid the oxidation caused by the heat dissipation structure being exposed to the atmosphere, and even the resulting poor appearance and poor heat dissipation.

Another object of the present invention is to provide a heat-dissipating semiconductor package and its manufacturing method, so as to reduce the wear and tear of cutting tools during the manufacturing process.

Another object of the present invention is to provide a heat dissipation semiconductor package and its manufacturing method, so that the heat dissipation structure is in direct contact with the semiconductor chip to obtain high heat dissipation.

In order to achieve the above and other objects, the present invention discloses a method for manufacturing a heat-dissipating semiconductor package, which includes: providing a substrate on which a semiconductor chip is connected and a carrier with a conductive layer on the surface, wherein the length and width of the substrate are close to Predetermined length and width dimensions of the semiconductor package, and the carrier has at least one opening for accommodating the substrate in the opening; providing a heat dissipation structure comprising a heat sink and a support portion extending downward from the edge of the heat sink, The supporting portion of the heat dissipation structure is placed on the carrier and electrically connected to the conductive layer, and the semiconductor chip is then placed under the heat sink; the package manufacturing process is performed to form a package on the substrate and the carrier. Cover the semiconductor chip and the encapsulation compound of the heat dissipation structure; grind and remove the encapsulation compound located above the heat sink of the heat dissipation structure, so that the heat sink exposes the encapsulation compound; perform an electroplating manufacturing process, thereby passing through the conductive layer of the carrier Depositing a metal protective layer on the heat sink where the encapsulation colloid is exposed; and cutting according to the predetermined length and width of the semiconductor encapsulation to produce the semiconductor encapsulation.

The center of the heat sink of the heat dissipation structure has a protruding part, so that the protruding part can expose the encapsulating colloid after grinding the encapsulating colloid, and the upper surface of the protruding part is plated with nickel, chromium, tin, gold or palladium, etc. metal protective layer to prevent oxidation, while the remaining surrounding parts of the heat sink are still embedded in the encapsulant, so as to increase the adhesion between the heat dissipation structure and the encapsulant; the four corners of the heat sink also have a The extension part is used for subsequent cutting operations according to the predetermined length and width of the semiconductor package. The cutting tool only cuts to the extension part instead of the overall heat sink, reducing the loss of the tool; the heat sink of the heat dissipation structure is relatively exposed The other side surface of one side of the encapsulant can be directly contacted with the semiconductor chip through a thermal conductive glue, so that the heat generated by the semiconductor chip during operation can be dissipated outside through the heat dissipation structure.

The present invention also discloses a heat-dissipating semiconductor package, including: a substrate; a semiconductor chip, connected to and electrically connected to the substrate; a heat sink, connected to the semiconductor chip with a gap of thermal conductive glue; and an encapsulation compound formed on the substrate. The substrate covers the semiconductor chip and exposes the upper surface of the heat sink; and the metal protection layer is electroplated and deposited on the outer surface of the heat sink exposed from the encapsulation colloid. The center of the heat sink has a protruding part, the upper surface of the protruding part exposes the encapsulation colloid and is electroplated and deposited with a metal protection layer to prevent oxidation. In addition, the four corners of the heat sink also have extensions, and the sides of the extensions are aligned with the sides of the encapsulant.

In addition, another preferred embodiment of the manufacturing method of the heat-dissipating semiconductor package of the present invention includes: providing a substrate on which a semiconductor chip is connected and a carrier with a conductive layer on the surface, wherein the length and width of the substrate are close to those of the semiconductor chip. The predetermined length and width dimensions of the package, and the carrier has at least one opening, so that the substrate is accommodated in the opening; a heat dissipation structure including a heat sink and a support portion extending downward from the edge of the heat sink is provided, so as to The supporting part of the heat dissipation structure is connected to the carrier and electrically connected to the conductive layer, so that the semiconductor chip is then placed under the heat sink; the package manufacturing process is performed to form a package on the substrate and the carrier. The encapsulation compound covering the semiconductor chip and the heat dissipation structure; grinding and removing the encapsulation compound located above the heat sink of the heat dissipation structure, so that the heat sink exposes the encapsulation compound; Forming a thin metal layer on the outer surface; performing an electroplating manufacturing process, thereby electroplating and depositing a metal protection layer on the thin metal layer through the conductive layer of the carrier; and performing cutting operations according to the predetermined length and width of the semiconductor package to A semiconductor package is produced.

The center of the heat sink of the heat dissipation structure has a protruding part, so that the protruding part can expose the encapsulating colloid after grinding the encapsulating colloid, and at the same time, the exposed protruding part and the outer surface of the encapsulating colloid are fully covered with nickel, copper, etc. A thin metal layer, and a metal protective layer such as nickel, chromium, tin, gold or palladium is electroplated and deposited on the thin metal layer to prevent oxidation of the heat dissipation structure, and the rest of the heat sink is still buried in the encapsulation body , so as to increase the adhesion between the heat dissipation structure and the encapsulant; the four corners of the heat sink also have extensions connected to the support for subsequent cutting operations according to the predetermined length and width of the semiconductor package. Cutting to the extension part instead of the integral heat sink reduces the loss of tools; the surface of the heat sink of the heat dissipation structure opposite to the side exposed to the encapsulation gel can be directly connected to the semiconductor chip through a thermal conductive adhesive, Therefore, the heat generated by the semiconductor chip during operation can be dissipated outside through the heat dissipation structure.

Another embodiment of the heat-dissipating semiconductor package of the present invention includes: a substrate; a semiconductor chip, connected to and electrically connected to the substrate; a heat sink, connected to the semiconductor chip with a gap between a heat-conducting adhesive; and an encapsulant formed on The substrate covers the semiconductor chip and exposes the upper surface of the heat sink; and a thin metal layer is formed on the packaging colloid and the upper surface of the heat sink exposed from the packaging colloid; and a metal protection layer is formed on the on the thin metal layer. The center of the cooling fin has a protruding part, the upper surface of the protruding part exposes the sealing compound, and the four corners of the cooling fin also have extension parts, and the side of the extending part is aligned with the side of the sealing compound.

Therefore, the heat-dissipating semiconductor package of the present invention and its manufacturing method are mainly to accommodate the substrate with the chip mounted in the opening of a carrier, and the carrier is preset with a conductive layer such as copper foil, so as to The conductive structure of the heat sink and the support part is placed on the carrier by its support part and is electrically connected with the conductive layer of the carrier, so that when the package manufacturing process is completed and the encapsulant on the heat sink is removed to expose the heat dissipation structure , so that electroplating equipment can be used to energize the conductive layer of the carrier to electroplate and deposit metal protective layers such as nickel, chromium, tin, gold, palladium, etc. on the heat dissipation structure exposed to the encapsulation colloid, so as to prevent the heat dissipation structure from being exposed to the outside world Oxidation, of course, can also be used when grinding and removing the packaging colloid on the heat sink to expose the heat dissipation structure, first use electroless plating (electroless plating) to form a thin film on the packaging colloid and the outer surface of the heat dissipation structure exposed from the packaging colloid. A thin metal layer of copper or thin nickel, and then electroplating and depositing a metal protective layer such as nickel, chromium, tin, gold, and palladium on the thin metal layer, to avoid the oxidation of the exposed heat dissipation structure, and even affect the appearance and heat dissipation performance. .

In addition, the center of the heat dissipation fin of the heat dissipation structure of the present invention has a protruding portion, the upper surface of the protrusion exposes the encapsulation compound, while the rest of the heat dissipation fin is still buried in the encapsulation compound, so as to increase the heat dissipation structure. Adhesion to the encapsulant; the four corners of the heat sink also have an extension connected to the support, for subsequent cutting operations according to the predetermined length and width of the semiconductor package, the cutting tool only cuts to the extension and The non-integral heat sink reduces the loss of the cutting tool; the surface of the heat sink of the heat dissipation structure opposite to the exposed encapsulation gel can be directly connected to the semiconductor chip through a thermal conductive glue, so that the semiconductor chip can be used during operation. The generated heat can be dissipated outward through the heat dissipation structure.

Description of drawings

1A to 1C are schematic diagrams of heat dissipation semiconductor packages disclosed in US Pat. Nos. 6,458,626 and 6,444,498;

2A to 2C are schematic diagrams of heat dissipation semiconductor packages disclosed in Chinese Taiwan patent I255047;

3A and 3B are schematic diagrams of a heat dissipation semiconductor package disclosed in US Pat. No. 5,886,408;

4A to 4F are schematic diagrams of the first embodiment of the heat dissipation semiconductor package and its manufacturing method of the present invention;

5A to 5G are schematic diagrams of a second embodiment of the heat dissipation semiconductor package and its manufacturing method of the present invention; and

FIG. 6 is a schematic diagram of a third embodiment of a heat dissipation semiconductor package of the present invention.

Description of main component symbols

10 semiconductor chips

11 heat sink

13 Substrate

14 Encapsulation colloid

15 interface layer

20 semiconductor chips

21 Heat dissipation structure

211 heat sink

212 support part

22 Carriers

220 opening

23 Substrate

24 Encapsulation colloid

30 semiconductor chips

31 Heat dissipation structure

34 Encapsulation colloid

40 semiconductor chips

41 Heat dissipation structure

411 heat sink

411a Protrusion

411b extension

412 support part

42 Carriers

420 opening

421 conductive layer

43 Substrate

44 Encapsulation colloid

45 metal protective layer

46 solder balls

47 film

48 Conductive adhesive

49 thermal adhesive

PE electroplating equipment

50 semiconductor chips

51 Heat dissipation structure

511 heat sink

511a Protrusion

511b extension

512 support part

52 Carriers

520 opening

521 conductive layer

53 Substrate

54 encapsulation colloid

55 metal protective layer

550 thin metal layers

56 solder balls

57 film

59 thermal adhesive

61 heat dissipation structure

610 rough surface

64 Encapsulation colloid

65 metal protective layer

Detailed ways

Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

first embodiment

Referring to FIGS. 4A to 4F , they are schematic diagrams of a first embodiment of the heat dissipation semiconductor package and its manufacturing method of the present invention.

As shown in FIG. 4A , a substrate 43 and a carrier 42 are provided, the planar size of the substrate 43 is close to the predetermined planar size of the semiconductor package to be formed, and at least one semiconductor chip 40 is placed and electrically connected to the substrate 43 superior. The semiconductor chip 40 can be electrically connected to the substrate 43 by wire bonding in addition to the flip-chip method shown in the figure.

The carrier 42 has an opening 420 and is provided with a conductive layer 421. The planar size of the carrier opening 420 is larger than the planar size of the substrate 43, so that the substrate 43 carrying the semiconductor chip 40 is embedded and positioned in the corresponding opening 420. At the same time, a film (Tape) 47 that can cover the gap between the carrier opening 420 and the substrate 43 can be pasted on the lower surface of the substrate 43 and the carrier 42, so as to position the substrate 43 and cover at the same time. the gap.

The film 47 can be a high temperature resistant polymer material, and the carrier 42 can be an organic insulating material such as FR4, FR5, BT with a conductive layer 421 (such as copper foil) on one surface or both surfaces. In addition, the carrier 42 There may be one or more openings 420 for accommodating one or more substrates carrying chips. In addition, a plurality of small-sized films can also be used to cover the gap between the substrate 43 and the carrier 42, so as to reduce the amount of film material used. In addition, glue can also be applied to the substrate 43 and the carrier 42. The gap between them is filled with a polymer material (not shown) such as solder repellent or epoxy resin, so as to position the substrate 43 and seal the gap at the same time.

As shown in Figures 4B and 4C, wherein this Figure 4C is a top view corresponding to Figure 4B, a heat dissipation structure 41 is provided, the material of the heat dissipation structure 41 is copper metal, and it includes a heat dissipation fin 411 and from the edge of the heat dissipation fin 411 The support portion 412 extending downwards is used to connect the support portion 412 of the heat dissipation structure 41 and electrically connect to the conductive layer 421 of the carrier 42, and pass a thermal conductive glue 49 to attach the heat sink 411 to the heat sink 411 on the semiconductor chip 40, so that the heat generated by the semiconductor chip 40 during operation can be dissipated directly through the heat dissipation structure 41, and the heat dissipation structure 41 can also be connected to the supporting part 412 through a conductive glue 48. disposed and electrically connected to the conductive layer 421 of the carrier 42 .

The center of the heat dissipation fin 411 of the heat dissipation structure 41 has a protruding portion 411a, and the four corners of the heat dissipation fin 411 also have an extension portion 411b to connect with the support portion 412, and it can be seen from FIG. 4C that the heat dissipation structure 41 is only extended. The part 411b passes through the predetermined cutting path of the semiconductor package (as shown by the dotted line) for subsequent cutting operations according to the predetermined length and width of the semiconductor package. loss.

Next, a package manufacturing process is performed to form an encapsulant 44 covering the semiconductor chip 40 and the heat dissipation structure 41 on the carrier 42 and the substrate 43 . The dimension of the plane covered by the encapsulant 44 is larger than the dimension of the plane surrounded by the supporting portion 412 of the heat dissipation structure, and the thickness of the encapsulant 44 is greater than the height of the heat dissipation structure 41 , so that the encapsulant 44 completely covers the heat dissipation structure 41 , and at the same time, the encapsulant 44 can also be filled into the gap between the substrate 43 and the carrier opening 420 .

As shown in FIG. 4D , the encapsulant 44 above the heat sink 411 of the heat dissipation structure 41 is removed by means such as grinding, so that the heat sink 411 exposes the encapsulant 44 , that is, the protrusion at the center of the heat sink 411 The encapsulant 44 is exposed from the out portion 411 a , while the rest of the heat sink 411 is still embedded in the encapsulant 44 , so as to increase the adhesion between the heat dissipation structure 41 and the encapsulant 44 .

As shown in FIG. 4E , the carrier 42 that has completed the packaging operation and exposed part of the heat dissipation structure is placed in an electroplating equipment (PE, plating equipment) to perform an electroplating manufacturing process, thereby passing through the conductive layer 421 and the electroplating of the carrier 42. The heat dissipation structure 41 is connected to the conductive layer 421, and on the outer surface of the heat dissipation structure 41 exposing the packaging colloid 44, electroplating deposits such as nickel (Ni), chromium (Cr), tin (Sn), gold (Au), The metal protective layer 45 such as palladium (Pd) has a thickness of about 1 to 3 μm to protect the part of the heat dissipation structure 41 exposed from the encapsulation body 44 .

As shown in FIG. 4F, the film 47 is removed, and a plurality of solder balls 46 are implanted on the surface of the substrate 43 where the semiconductor chip 40 is not provided, and along the predetermined size of the semiconductor package (ie, about the plane of the substrate 43 Size) position cutting operation, to make the heat dissipation semiconductor package of the present invention.

Through the aforementioned manufacturing method, the heat dissipation semiconductor package of the present invention includes: a substrate 43; a semiconductor chip 40, which is connected to and electrically connected to the substrate 43; 40; packaging colloid 44, formed on the substrate 43 to cover the semiconductor chip 40 and expose the upper surface of the heat sink 411; on the outside.

The center of the heat sink 411 has a protruding portion 411a, so that after the encapsulating compound 44 is ground, the protruding portion exposes the encapsulating compound 44, so that the metal protection layer 45 is electroplated and deposited on the upper surface of the exposed protruding portion 411a. In order to prevent oxidation, the four corners of the heat sink 411 also have extensions 411b. Since the extensions 411b pass through the cutting path for forming the semiconductor package, the sides of the extensions 411b and the sides of the encapsulant 44 Edge cut neat.

second embodiment

Referring to FIGS. 5A to 5G , they are schematic cross-sectional views of a second embodiment of the heat dissipation semiconductor package and its manufacturing method of the present invention.

As shown in Figure 5A, a substrate 53 and a carrier 52 are provided, the length and width of the substrate 53 are close to the predetermined length and width of the semiconductor package, and at least one semiconductor chip 50 is arranged on the substrate 53, the carrier 52 has an opening 520 and a conductive layer 521 is provided. The length and width of the opening 520 are larger than the length and width of the substrate 53 so as to accommodate the substrate 53 in the opening 520 .

As shown in Figures 5B and 5C, wherein Figure 5C is a top view corresponding to Figure 5B, a heat dissipation structure 51 is provided, and the heat dissipation structure 51 includes a heat dissipation fin 511 and a support portion 512 extending downward from the heat dissipation fin 511, so as to The support portion 512 of the heat dissipation structure 51 is connected and electrically connected to the conductive layer 521 of the carrier 52 , and the semiconductor chip 50 is bonded to the heat sink 511 through a heat conduction glue 59 .

The center of the heat dissipation fin 511 of the heat dissipation structure 51 has a protruding portion 511a, and the four corners of the heat dissipation fin 511 also have an extension portion 511b to connect with the support portion 512, and it can be seen from FIG. 5C that the heat dissipation structure 51 is only extended. The part 511b passes through the predetermined cutting path of the semiconductor package (as shown by the dotted line) for subsequent cutting operations according to the predetermined length and width of the semiconductor package. loss.

Next, a package manufacturing process is performed to form an encapsulant 54 covering the semiconductor chip 50 and the heat dissipation structure 51 on the carrier 52 and the substrate 53 .

As shown in FIG. 5D , the encapsulant 54 above the heat sink 511 of the heat dissipation structure 51 is removed by means such as grinding, so that the heat sink 511 exposes the encapsulant 54 . That is, the protruding portion 511 a at the center of the heat sink 511 exposes the encapsulant 54 .

As shown in FIG. 5E , a thin metal layer 550 is formed on the entire surface of the encapsulant 54 and the outer surface of the heat sink 511 exposing the encapsulant 54 . The thin metal layer 550 can be formed as a thin copper or nickel layer with a thickness of about 0.1 to 0.5 μm by electroless plating.

As shown in FIG. 5F , using the aforementioned electroplating equipment and manufacturing process, a metal layer such as nickel, nickel, etc. with a thickness of about 1 to 3 μm is electroplated and deposited on the thin metal layer 550 through the conductive layer 521 and the heat dissipation structure 51 of the carrier 52. Metal protective layer 55 of chrome, tin, gold, palladium, etc.

As shown in FIG. 5G , cutting is performed along the predetermined length and width of the semiconductor package, and a plurality of solder balls 56 are planted to produce a heat dissipation semiconductor package.

Through the aforementioned manufacturing method, the heat-dissipating semiconductor package of the present invention includes: a substrate 53; a semiconductor chip 50, which is connected to and electrically connected to the substrate 53; 50; the encapsulant 54 is formed on the substrate 53 to cover the semiconductor chip 50 and expose the upper surface of the heat sink 511; the thin metal layer 550 is formed on the encapsulation 54 and the encapsulation 54 the upper surface of the heat sink 511 ; and the metal protection layer 55 , which is electroplated and deposited on the thin metal layer 550 .

third embodiment

Referring to FIG. 6 , it is a schematic cross-sectional view of a third embodiment of the heat dissipation semiconductor package of the present invention.

As shown in the figure, the heat dissipation semiconductor package of this embodiment is substantially the same as the previous embodiment, the main difference is that the surface of the heat dissipation structure 61 is blackened to form a rough surface 610 for the heat dissipation structure 61 and the encapsulant 64 has good adhesion. The encapsulation compound on the heat dissipation structure 61 is removed by grinding, so that a metal protection layer 65 is electroplated and deposited on the surface of the heat dissipation structure 61 where the encapsulation compound 64 is exposed.

Therefore, the heat-dissipating semiconductor package of the present invention and its manufacturing method are mainly to accommodate the substrate with the chip mounted in the opening of a carrier, and the carrier is preset with a conductive layer such as copper foil, so as to The heat sink of the support part is placed on the carrier by its support part and is electrically connected with the conductive layer of the carrier, so that when the package manufacturing process is completed and the packaging gel on the heat sink is removed by grinding to expose the heat dissipation structure, Electroplating equipment is used to energize the conductive layer of the carrier to electroplate and deposit metal protective layers such as nickel, chromium, tin, gold, palladium, etc. on the heat dissipation structure exposed to the encapsulation colloid to prevent oxidation of the heat dissipation structure exposed to the outside world. Of course, when the encapsulation colloid on the heat sink is removed by grinding to expose the heat dissipation structure, an electroless plating method is used to form a thin copper or thin nickel coating on the encapsulation colloid and the outer surface of the heat dissipation structure where the encapsulation colloid is exposed. A metal layer, and then a metal protection layer is electroplated and deposited on the thin metal layer to avoid the oxidation of the heat dissipation structure exposed to the outside, and even affect the appearance and heat dissipation performance.

In addition, the center of the heat sink of the heat dissipation structure of the present invention has a protruding part, so that after grinding the encapsulating compound, the protruding part can expose the encapsulating compound, while the rest of the heat sink is still embedded in the encapsulating compound. , so as to increase the adhesion between the heat dissipation structure and the encapsulant; the four corners of the heat sink also have extensions connected to the support for subsequent cutting operations according to the predetermined length and width of the semiconductor package. Cutting to the extension part instead of the integral heat sink reduces the loss of the tool; the other side surface of the heat sink of the heat dissipation structure relative to the exposed encapsulant can be directly connected to the semiconductor chip through a thermal conductive glue, so as to provide The heat generated by the semiconductor chip during operation can dissipate outside through the heat dissipation structure.

The above-mentioned embodiments are only for illustrating the principles and effects of the present invention, but not for limiting the present invention. Any person skilled in the art can modify and change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be as listed in the appended claims.

Claims (30)

1. the method for making of a radiating semiconductor packer comprises:

Provide to connect the bearing part that the substrate that is equipped with semiconductor chip and surface are provided with conductive layer, wherein the length and width size of this substrate approaches the predetermined length and width size of semiconductor package part, and this bearing part has at least one opening, so that this substrate is placed in this opening;

The radiator structure of the support portion that includes fin and extend downwards from this fin edge is provided, connects with support portion and place on this bearing part and be electrically connected to this conductive layer this radiator structure;

Carry out package fabrication process, on this substrate and bearing part, to form the packing colloid that coats this semiconductor chip and radiator structure;

Remove the packing colloid of the fin top that is positioned at this radiator structure, so that this fin exposes outside this packing colloid;

Electroplate manufacture process, thus by the conductive layer of this bearing part on the fin that exposes outside this packing colloid electroplating deposition one coat of metal; And

Predetermined length and width size according to semiconductor package part is carried out cutting operation, to make semiconductor package part.

2. the method for making of radiating semiconductor packer according to claim 1, wherein, this bearing part is at least one surface with one of them of the organic insulating material of FR4, the FR5 of Copper Foil, BT.

3. the method for making of radiating semiconductor packer according to claim 1, wherein, the fin of this radiator structure is followed on this semiconductor chip by a heat-conducting glue.

4. the method for making of radiating semiconductor packer according to claim 1, wherein, the support portion of this radiator structure connects the conductive layer of putting and be electrically connected to this bearing part by a conducting resinl.

5. the method for making of radiating semiconductor packer according to claim 1, wherein, the fin center of this radiator structure has a protuberance, expose outside packing colloid for its upper surface, four corners of this fin also have extension, being connected with this support portion, and this radiator structure only is that extension passes through semiconductor package part predetermined cuts path.

6. the method for making of radiating semiconductor packer according to claim 5, wherein, utilize lapping mode to remove to be positioned at the packing colloid of the fin top of this radiator structure, so that the protuberance at this fin center exposes outside packing colloid, and all the other peripheral part of this fin still are embedded in the packing colloid.

7. the method for making of radiating semiconductor packer according to claim 5, wherein, the side of this extension and the side of packing colloid trim.

8. the method for making of radiating semiconductor packer according to claim 1, wherein, this coat of metal is one of them of nickel, chromium, tin, gold, group that palladium constitutes, and about 1 to the 3 μ m of its thickness.

9. the method for making of radiating semiconductor packer according to claim 1, wherein, handle through melanism on the surface of this radiator structure, and to be formed with rough surface, using with packing colloid has good adhesion.

10. the method for making of a radiating semiconductor packer comprises:

Provide to connect the bearing part that the substrate that is equipped with semiconductor chip and surface are provided with conductive layer, wherein the length and width size of this substrate approaches the predetermined length and width size of semiconductor package part, and this bearing part has at least one opening, so that this substrate is placed in this opening;

The radiator structure of the support portion that includes fin and extend downwards from this fin edge is provided, connects with support portion and place on this bearing part and be electrically connected to this conductive layer this radiator structure;

Carry out package fabrication process, on this substrate and bearing part, to form the packing colloid that coats this semiconductor chip and radiator structure;

Remove the packing colloid of the fin top that is positioned at this radiator structure, so that this fin exposes outside this packing colloid;

Form thin metal layer in this packing colloid and the fin outer surface that exposes outside this packing colloid;

Electroplate manufacture process, thus the conductive layer by this bearing part and on this thin metal layer electroplating deposition one coat of metal; And

Predetermined length and width size according to semiconductor package part is carried out cutting operation, to make semiconductor package part.

11. the method for making of radiating semiconductor packer according to claim 10, wherein, this bearing part is at least one surface with one of them of the organic insulating material of FR4, the FR5 of Copper Foil, BT.

12. the method for making of radiating semiconductor packer according to claim 10, wherein, the fin of this radiator structure is followed on this semiconductor chip by a heat-conducting glue.

13. the method for making of radiating semiconductor packer according to claim 10, wherein, the support portion of this radiator structure connects the conductive layer of putting and be electrically connected to this bearing part by a conducting resinl.

14. the method for making of radiating semiconductor packer according to claim 10, wherein, the fin center of this radiator structure has a protuberance, expose outside packing colloid for its upper surface, four corners of this fin also have extension, being connected with this support portion, and this radiator structure only is that extension passes through semiconductor package part predetermined cuts path.

15. the method for making of radiating semiconductor packer according to claim 14, wherein, utilize lapping mode to remove to be positioned at the packing colloid of the fin top of this radiator structure, so that the protuberance at this fin center exposes outside packing colloid, and all the other peripheral part of this fin still are embedded in the packing colloid.

16. the method for making of radiating semiconductor packer according to claim 14, wherein, the side of this extension and the side of packing colloid trim.

17. the method for making of radiating semiconductor packer according to claim 10, wherein, this coat of metal is one of them of nickel, chromium, tin, gold, group that palladium constitutes, and about 1 to the 3 μ m of its thickness.

18. the method for making of radiating semiconductor packer according to claim 10, wherein, this thin metal layer reaches one of them of thin nickel dam for the thin copper layer that forms about 0.1 to the 0.5 μ m of thickness in the electroless plating mode.

19. the method for making of radiating semiconductor packer according to claim 10, wherein, handle through melanism on the surface of this radiator structure, and to be formed with rough surface, using with packing colloid has good adhesion.

20. a radiating semiconductor packer comprises:

Substrate;

Semiconductor chip connects and puts and be electrically connected to this substrate;

Fin, at interval a heat-conducting glue and connecing places on the semiconductor chip;

Packing colloid is formed on this substrate to coat this semiconductor chip and to expose outside the upper surface of this fin; And

Coat of metal, electroplating deposition is on the fin outer surface that exposes outside this packing colloid.

21. radiating semiconductor packer according to claim 20, wherein, this fin center has a protuberance, expose outside packing colloid for its upper surface, and all the other peripheral part of this fin is embedded in the packing colloid still.

22. radiating semiconductor packer according to claim 20, wherein, four corners of this fin also have extension, and the side of the side of this extension and packing colloid trims.

23. radiating semiconductor packer according to claim 20, wherein, this coat of metal is one of them of nickel, chromium, tin, gold, group that palladium constitutes, and about 1 to the 3 μ m of its thickness.

24. radiating semiconductor packer according to claim 20, wherein, this fin surface is handled through melanism, and to be formed with rough surface, using with packing colloid has good adhesion.

25. a radiating semiconductor packer comprises:

Substrate;

Semiconductor chip connects and puts and be electrically connected to this substrate;

Fin, at interval a heat-conducting glue and connecing places on the semiconductor chip;

Packing colloid is formed on this substrate to coat this semiconductor chip and to expose outside the upper surface of this fin;

Thin metal layer, holomorphism are formed in this packing colloid and expose outside the upper surface of the fin of this packing colloid; And

Coat of metal, electroplating deposition is on this thin metal layer.

26. radiating semiconductor packer according to claim 25, wherein, this fin center has a protuberance, expose outside packing colloid for its upper surface, and all the other peripheral part of this fin is embedded in the packing colloid still.

27. radiating semiconductor packer according to claim 25, wherein, four corners of this fin also have extension, and the side of the side of this extension and packing colloid trims.

28. radiating semiconductor packer according to claim 25, wherein, this coat of metal is one of them of nickel, chromium, tin, gold, group that palladium constitutes, and about 1 to the 3 μ m of its thickness.

29. radiating semiconductor packer according to claim 25, wherein, handle through melanism on the surface of this fin, and to be formed with rough surface, using with packing colloid has good adhesion.

30. radiating semiconductor packer according to claim 25, wherein, this thin metal layer reaches one of them of thin nickel dam for the thin copper layer that forms about 0.1 to the 0.5 μ m of thickness in the electroless plating mode.

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