CN101207004A - Method for controlling semiconductor silicon dies etching technique - Google Patents
Method for controlling semiconductor silicon dies etching technique Download PDFInfo
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- CN101207004A CN101207004A CNA2006101695662A CN200610169566A CN101207004A CN 101207004 A CN101207004 A CN 101207004A CN A2006101695662 A CNA2006101695662 A CN A2006101695662A CN 200610169566 A CN200610169566 A CN 200610169566A CN 101207004 A CN101207004 A CN 101207004A
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- 238000005530 etching Methods 0.000 title claims abstract description 92
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 64
- 239000010703 silicon Substances 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000001228 spectrum Methods 0.000 claims abstract description 29
- 230000003595 spectral effect Effects 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 7
- 230000003628 erosive effect Effects 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 18
- 230000036962 time dependent Effects 0.000 claims description 3
- 238000000295 emission spectrum Methods 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004886 process control Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000012631 diagnostic technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000000547 structure data Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
The invention discloses a feedback control method of a semiconductor silicon chip etching process. Plasma spectral information of the plasma in an etching cavity is detected through the prior optical emission spectra OES on the etching cavity which is used for the end-control to the etching process when an end point of the etched silicon chip is detected. The detected spectrum information is processed, and according to the processing result, the adjustable quantity of the etching process parameter is determined, and the process parameter is adjusted, to realize the feedback control of the etching process to the semiconductor silicon chip. Additionally integrated online check-up equipment is saved, a complex feedback control is carried on, the control process is simple, the control is precise, and the cost is low.
Description
Technical field
The present invention relates to a kind of process control technology, relate in particular to a kind of feedback of semiconductor silicon dies etching technique.
Background technology
In the semi-conductor silicon chip process technology, (Advanced ProcessControl APC) mainly contains two aspects to the advanced control method of processing technology, is the fault diagnostic techniques on the one hand, is feedback control technology on the other hand at present.In feedback control technology, at different technology, the feedback of use is different.
In etching technics, general etching line thickness is in 90nm or the lithographic technique below the 90nm, its FEEDBACK CONTROL flow process as shown in Figure 1, usually use integrated measuring equipment, in having carried out technology or technical process, in real time process results is made judgement, and this signal is input in the feedback controller, technological parameter is adjusted.Be applied at present in the feedback of etching apparatus, normally by OCD (Optical Critical Dimension: integrated optics critical size measuring equipment) carry out before the etching and etching after CD (Critical Dimension: measurement critical sizes such as etching line thickness) on the silicon chip, adjust then, thereby determine the technological parameter that is used for etching technics.
This technology is carried out FEEDBACK CONTROL needs to buy in addition OCD usually, carry out the integrated of software and hardware then, often spend great amount of manpower resource and expense, and because the measuring principle of OCD is the signal with optics, the result that match becomes silicon chip CD that sets up through model, modeling process needs very professional optical knowledge and detailed silicon chip surface film layer structure data, so such process more complicated often.
Summary of the invention
The feedback that the purpose of this invention is to provide the semiconductor silicon dies etching technique that a kind of control procedure is simple, control is accurate, cost is low
The objective of the invention is to be achieved through the following technical solutions:
The feedback of semiconductor silicon dies etching technique of the present invention, described silicon chip etching technology carries out in etching cavity, and described etching cavity is provided with optical scattering spectrometer OES, is used for etching technics is carried out terminal point control, comprises step:
A, when detecting the silicon chip erosion terminal point by described OES, the spectral information of plasma in the etching cavity.
B, detected spectral information is handled, and, determined the adjusted value of etching technics parameter, and technological parameter is adjusted according to the result who handles.
In the described steps A, the spectral information of plasma comprises the strength information of spectrum and/or the change information of spectral intensity.
The change information of described spectral intensity comprises the spectrum line slope, i.e. the time dependent slope of a curve of spectral intensity.
Among the described step B,
At first determine the result of the silicon chip erosion of spectrum line slope correspondence;
According to the requirement of silicon chip etching technology, determine the threshold values of spectrum line slope then, when the spectrum line slope surpasses threshold values, then technological parameter is adjusted the etching result.
The result of described silicon chip erosion comprises the uniformity of silicon chip erosion speed.
Among the described step B,
The result of the silicon chip erosion of the intensity correspondence of at first definite spectrum;
According to the requirement of silicon chip etching technology, determine the threshold values of the intensity of spectrum then, when the intensity of spectrum surpasses threshold values, then technological parameter is adjusted the etching result.
The result of described silicon chip erosion comprises silicon chip erosion speed.
Described technological parameter comprises at least one parameter.
Comprise linear Feedback Control and/or nonlinear Feedback Control to technological parameter.
As seen from the above technical solution provided by the invention, the feedback of semiconductor silicon dies etching technique of the present invention, because by the existing optical scattering spectrometer OES that is used for etching technics is carried out terminal point control on the etching cavity, when detecting the silicon chip erosion terminal point, the spectral information of plasma in the etching cavity.Detected spectral information is handled, and, determined the adjusted value of etching technics parameter, and technological parameter is adjusted, realize FEEDBACK CONTROL semiconductor silicon dies etching technique according to the result who handles.Saved the complexity of other integrated feedback controling equipment, control procedure is simple, control is accurate, cost is low.
Description of drawings
Fig. 1 is the feedback control procedure flow chart of semiconductor silicon dies etching technique of the prior art;
Fig. 2 is the structural representation of semiconductor silicon dies etching chamber of the prior art;
Fig. 3 is the feedback control procedure flow chart of semiconductor silicon dies etching technique of the present invention;
When Fig. 4 is the etch rate of ideal uniform, the spectral intensity time history plot of plasma in the etching cavity;
When Fig. 5 is uneven etch rate, the spectral intensity time history plot of plasma in the etching cavity;
Fig. 6 is the curve chart of intensity of spectral lines with the heterogeneity variation of etch rate.
Embodiment
The feedback of semiconductor silicon dies etching technique of the present invention, as shown in Figure 2, described silicon chip etching technology carries out in etching cavity, and described etching cavity is provided with OES (optical scattering spectrometer), is used for etching technics is carried out terminal point control.
On etching apparatus, use integrated OES to carry out the control of etching terminal usually.When etching from a kind of film of silicon chip during to another film, owing to require that etching technics possesses different etch rates when the different rete of etching, need certain selection ratio, when etching during from a skim to a following skim, etching process can judge from the intensity of emission spectra of etch product by using OES to detect, thereby stop etching, a more following skim is carried out etching behind the change technological parameter.Therefore OES equipment is the hardware of etching apparatus indispensability, is mainly used to carry out etching terminal and detects.The present invention will utilize this equipment to carry out the automatic feedback control of etching technics.
Its preferable embodiment comprises as shown in Figure 3
Step 32, detected spectral information is handled, and, determined the adjusted value of etching technics parameter, and technological parameter is adjusted according to the result who handles.
In the described step 31, the spectral information of plasma comprises the strength information of spectrum and the change information of spectral intensity.
The change information of described spectral intensity mainly refers to the spectrum line slope, i.e. the time dependent slope of a curve of spectral intensity.
At OES silicon chip erosion is carried out in the end point determination process, when etching during from one deck to another layer, the detected spectral signal of OES has than obvious variation, mainly be since etching this when two-layer, the etch rate difference causes.For example when carrying out polycrystalline silicon etching process, etching polysilicon speed is greater than the silica etch rate, in etching most of polysilicon, when silicon oxide layer occurred, etch rate obviously reduced.
As shown in Figure 4, under the perfect condition, when etch rate is very even on whole silicon wafer, show that this moment, each several part arrived silicon oxide layer simultaneously, this moment, spectral intensity descended rapidly, and the slope of the spectrum line during the silicon chip erosion terminal point is very big.
As shown in Figure 5, if etch rate is inhomogeneous, promptly when the fastest position of etching had arrived time one deck, other position also had a lot of residues, and this moment, spectral intensity descended slowlyer, and the slope of the spectrum line during the silicon chip erosion terminal point is less.When the value that requires less than etching technics, just must adjust the etching technics parameter.
In the described step 32, when technological parameter is adjusted, at first determine the result of the silicon chip erosion of spectrum line slope correspondence;
According to the requirement of silicon chip etching technology, determine the threshold values of spectrum line slope then, when the spectrum line slope surpasses threshold values, then technological parameter is adjusted the etching result.
The uniformity of the main silicon chip erosion speed of the result of described silicon chip erosion.
As shown in Figure 6, the threshold value of a spectrum line slope is set usually, if the value of measuring is lower than threshold value, just illustrate that the heterogeneity of etch rate surpasses the requirement of etching technics, begin to start FEEDBACK CONTROL, promptly from feedback control model, draw corresponding process parameter value, and technological parameter is adjusted.
In the feedback of above-mentioned semiconductor silicon dies etching technique, also can carry out FEEDBACK CONTROL to technological parameter according to the intensity of spectrum, at this moment, in the described step 32,
The result of the silicon chip erosion of the intensity correspondence of at first definite spectrum;
According to the requirement of silicon chip etching technology, determine the threshold values of the intensity of spectrum then, when the intensity of spectrum surpasses threshold values, then technological parameter is adjusted the etching result.
The result of the silicon chip erosion here mainly refers to the speed of silicon chip erosion.
Above-described FEEDBACK CONTROL can be to one-parameter linear Feedback Control or non-linear FEEDBACK CONTROL, also can be linear FEEDBACK CONTROL or the non-linear FEEDBACK CONTROL that a plurality of parameters are carried out.A plurality of technological parameters here can be pressure, flow, the gas ratios of process gas, or the parameters such as power of radio-frequency power supply, also can be other technological parameters.
The present invention utilizes the existing testing sensor of etching apparatus that process results is carried out FEEDBACK CONTROL, has saved the complexity of other integrated equipment, and control procedure is simple, control is accurate, cost is low.And such FEEDBACK CONTROL is the judgement of carrying out from the result that True Data obtains, and it is more accurate to carry out FEEDBACK CONTROL compared with the result who uses simulation to obtain.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.
Claims (9)
1. the feedback of a semiconductor silicon dies etching technique, described silicon chip etching technology carries out in etching cavity, and described etching cavity is provided with optical scattering spectrometer OES, is used for etching technics is carried out terminal point control, it is characterized in that, comprises step:
A, when detecting the silicon chip erosion terminal point by described OES, the spectral information of plasma in the etching cavity.
B, detected spectral information is handled, and, determined the adjusted value of etching technics parameter, and technological parameter is adjusted according to the result who handles.
2. the feedback of semiconductor silicon dies etching technique according to claim 1 is characterized in that, in the described steps A, the spectral information of plasma comprises the strength information of spectrum and/or the change information of spectral intensity.
3. the feedback of semiconductor silicon dies etching technique according to claim 2 is characterized in that, the change information of described spectral intensity comprises the spectrum line slope, i.e. the time dependent slope of a curve of spectral intensity.
4. the feedback of semiconductor silicon dies etching technique according to claim 3 is characterized in that, among the described step B,
At first determine the result of the silicon chip erosion of spectrum line slope correspondence;
According to the requirement of silicon chip etching technology, determine the threshold values of spectrum line slope then, when the spectrum line slope surpasses threshold values, then technological parameter is adjusted the etching result.
5. the feedback of semiconductor silicon dies etching technique according to claim 4 is characterized in that, the result of described silicon chip erosion comprises the uniformity of silicon chip erosion speed.
6. the feedback of semiconductor silicon dies etching technique according to claim 2 is characterized in that, among the described step B,
The result of the silicon chip erosion of the intensity correspondence of at first definite spectrum;
According to the requirement of silicon chip etching technology, determine the threshold values of the intensity of spectrum then, when the intensity of spectrum surpasses threshold values, then technological parameter is adjusted the etching result.
7. the feedback of semiconductor silicon dies etching technique according to claim 6 is characterized in that, the result of described silicon chip erosion comprises silicon chip erosion speed.
8. according to the feedback of claim 5 or 7 described semiconductor silicon dies etching techniques, it is characterized in that described technological parameter comprises at least one parameter.
9. the feedback of semiconductor silicon dies etching technique according to claim 8 is characterized in that, comprises linear Feedback Control and/or nonlinear Feedback Control to technological parameter.
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| Application Number | Priority Date | Filing Date | Title |
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| CNA2006101695662A CN101207004A (en) | 2006-12-22 | 2006-12-22 | Method for controlling semiconductor silicon dies etching technique |
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| CNA2006101695662A CN101207004A (en) | 2006-12-22 | 2006-12-22 | Method for controlling semiconductor silicon dies etching technique |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102063063A (en) * | 2009-11-11 | 2011-05-18 | 台湾积体电路制造股份有限公司 | Semiconductor manufacturing method and system |
| CN101717935B (en) * | 2008-10-09 | 2011-11-23 | 欣兴电子股份有限公司 | Etching method of metal layer of substrate |
| CN102426421A (en) * | 2011-11-30 | 2012-04-25 | 上海华力微电子有限公司 | Advanced process control method for plasma etching |
| CN103632943A (en) * | 2012-08-24 | 2014-03-12 | 中国科学院微电子研究所 | Semiconductor device manufacturing method |
| CN103715113A (en) * | 2013-12-13 | 2014-04-09 | 合肥京东方光电科技有限公司 | Method and device for etching rate uniformity monitoring |
| CN103839851A (en) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Endpoint judgment method |
| CN105097589A (en) * | 2015-05-27 | 2015-11-25 | 上海华力微电子有限公司 | Method for detecting over-etching amount of metal hard mask all-in-one etching through hole |
| CN105929801A (en) * | 2016-04-28 | 2016-09-07 | 中国电子科技集团公司第四十五研究所 | Intelligent control method for semiconductor processing technological parameters |
| CN107910281A (en) * | 2017-11-20 | 2018-04-13 | 上海华力微电子有限公司 | A kind of method for monitoring etching homogeneity in real time |
| CN110867374A (en) * | 2019-11-25 | 2020-03-06 | 上海华力微电子有限公司 | Integrated etching method for metal hard mask and control system thereof |
| CN110931399A (en) * | 2019-12-23 | 2020-03-27 | 武汉大学 | A RIE semiconductor material etching device with multiple detection functions |
| CN111081584A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院电子学研究所 | Spectrometer-based ion etching end point detection device and etching system using same |
-
2006
- 2006-12-22 CN CNA2006101695662A patent/CN101207004A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101717935B (en) * | 2008-10-09 | 2011-11-23 | 欣兴电子股份有限公司 | Etching method of metal layer of substrate |
| CN102063063B (en) * | 2009-11-11 | 2016-07-06 | 台湾积体电路制造股份有限公司 | Semiconductor manufacturing method and system |
| CN102063063A (en) * | 2009-11-11 | 2011-05-18 | 台湾积体电路制造股份有限公司 | Semiconductor manufacturing method and system |
| CN102426421B (en) * | 2011-11-30 | 2014-08-13 | 上海华力微电子有限公司 | Advanced process control method for plasma etching |
| CN102426421A (en) * | 2011-11-30 | 2012-04-25 | 上海华力微电子有限公司 | Advanced process control method for plasma etching |
| CN103632943A (en) * | 2012-08-24 | 2014-03-12 | 中国科学院微电子研究所 | Semiconductor device manufacturing method |
| CN103715113B (en) * | 2013-12-13 | 2016-03-30 | 合肥京东方光电科技有限公司 | A kind of monitoring method of etch rate uniformity and device |
| CN103715113A (en) * | 2013-12-13 | 2014-04-09 | 合肥京东方光电科技有限公司 | Method and device for etching rate uniformity monitoring |
| CN103839851A (en) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Endpoint judgment method |
| CN105097589A (en) * | 2015-05-27 | 2015-11-25 | 上海华力微电子有限公司 | Method for detecting over-etching amount of metal hard mask all-in-one etching through hole |
| CN105097589B (en) * | 2015-05-27 | 2018-08-28 | 上海华力微电子有限公司 | A kind of detection method of metal hardmask integration etching through hole over etching amount |
| CN105929801A (en) * | 2016-04-28 | 2016-09-07 | 中国电子科技集团公司第四十五研究所 | Intelligent control method for semiconductor processing technological parameters |
| CN107910281A (en) * | 2017-11-20 | 2018-04-13 | 上海华力微电子有限公司 | A kind of method for monitoring etching homogeneity in real time |
| CN110867374A (en) * | 2019-11-25 | 2020-03-06 | 上海华力微电子有限公司 | Integrated etching method for metal hard mask and control system thereof |
| CN110867374B (en) * | 2019-11-25 | 2022-06-14 | 上海华力微电子有限公司 | Integrated etching method for metal hard mask and control system thereof |
| CN110931399A (en) * | 2019-12-23 | 2020-03-27 | 武汉大学 | A RIE semiconductor material etching device with multiple detection functions |
| CN111081584A (en) * | 2019-12-30 | 2020-04-28 | 中国科学院电子学研究所 | Spectrometer-based ion etching end point detection device and etching system using same |
| CN111081584B (en) * | 2019-12-30 | 2022-07-19 | 中国科学院电子学研究所 | Spectrometer-based ion etching end point detection device and etching system using same |
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Open date: 20080625 |