CN101205498A - Cutting fluid for hard brittle material and uses thereof - Google Patents
Cutting fluid for hard brittle material and uses thereof Download PDFInfo
- Publication number
- CN101205498A CN101205498A CNA2007103012388A CN200710301238A CN101205498A CN 101205498 A CN101205498 A CN 101205498A CN A2007103012388 A CNA2007103012388 A CN A2007103012388A CN 200710301238 A CN200710301238 A CN 200710301238A CN 101205498 A CN101205498 A CN 101205498A
- Authority
- CN
- China
- Prior art keywords
- formula
- described water
- metalworking liquid
- soluble metalworking
- water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Lubricants (AREA)
Abstract
The invention relates to a water-soluble cutting liquid used for processing hard brittle materials. The components of the invention by weight percentage are as follows: 70 to 100 percent of polyalkoxylated compound, 0 to 15 percent of extreme pressure resistant chelation anti-settling agent, 0 to 15 percent of dissolution promoter . The cutting liquid of the invention has the advantages of no pollution, low metal impurity content, high cutting sheet rate, and high finished product qualification rate and so on. The invention also relates to the application of the cutting liquid in the processing of monocrystalline silicon, polysilicon, germanium, gallium arsenide, quartz, Indium gallium nitride or precious stones.
Description
Technical field
The present invention relates to a kind of cutting fluid, relate in particular to a kind of chemosynthesis class cutting fluid and application thereof of (many) lines cutting of hard brittle material.
Background technology
Along with the reinforcement of people's environmental consciousness, this green resource of sun power is paid much attention in countries in the world, embodies a concentrated reflection of in the solar energy power generating industry.Follow the development of semi-conductor, photovoltaic material technology, specification and quality to crystal wafers such as source product silicon chips also propose higher requirement, the crystal wafer ever-larger diameters has become the notable feature and the inexorable trend of silicon sheet material development such as current sun power, and the increase and the attenuation of crystal wafer size simultaneously had higher requirement to the process technology equipment of its production.
Circle cutting in traditional crystal bar is cut into, this kind method cutting efficiency is lower, and wafer diameter is less.Characteristics such as general wafer cutting technique is a line cutting technology both at home and abroad at present, and the wafer bending degree of this method cutting is little, edge of a knife cutting wearing and tearing are little, the TTV sheet is few, surface damage layer is shallow.Multi-thread cutting is a cutting major diameter wafer Global Access with, effective means, and wherein the most key is exactly reduces the cut channel loss and improve line and cut surface quality, and these two factors are in close relations with the auxilliary material steel wire of cutting, silicon carbide and cutting fluid.
For the domestic and international first-generation product of line cutting fluid mainly is to be the oiliness cutting fluid of major ingredient with mineral oil, the oiliness cutting fluid is inflammable, and environmental pollution is bigger, needs simultaneously chloride alkane solvent during cleaning silicon chip, human body there is carcinogenesis, so use fewer and feweri; S-generation product mainly is to be the water-soluble metalworking liquid of major ingredient with water and solid packing, this series products is moisture and solid packing is more serious to equipment corrosion, the solid packing environmental pollution is serious, needs to add the multiple additives that are unfavorable for that wafer is used such as antirust simultaneously.So study a kind of pollution-free, metals content impurity is low, cutting piece rate height, product qualified rate height, the easy cleaned cutting fluid that is used for (many) lines sheet, side and the piece cutting of hard brittle material are our urgency problems to be solved.
Summary of the invention
The purpose of this invention is to provide a kind of pollution-free, metals content impurity is low, cutting piece rate height, product qualified rate height, the easy cleaned synthetic class cutting fluid of water-soluble chemical that is used for hard brittle material.
The objective of the invention is to be achieved through the following technical solutions:
A kind of hard brittle material water-soluble metalworking liquid is provided, forms by following components in weight percentage:
Poly-alkoxylation compound 70～100%
Anti-extreme pressure chelating anti-settling agent 0～15%
Dissolution accelerator 0～15%
Described water-soluble metalworking liquid preferably is made up of following components in weight percentage:
Poly-alkoxylation compound 80～99.999%
Anti-extreme pressure chelating anti-settling agent 0.001～10%
Dissolution accelerator 0～10%.
Described poly-alkoxylation compound preferably is made up of the mixture of one or more compounds of following skeleton symbol (a) expression:
(a)R[(EO)
k(PO)
m(BO)
n]H
Wherein, the real number of k, m and n preferred 0～30, R is preferred primary, a kind of in the unit of the second month in a season or tertiary carbon or the polynary alkoxyl group; K is 2～20 real number more preferably, and m and n be 0～10 real number more preferably, and R is the uncle or the unit or the polynary alkoxyl group of secondary carbon more preferably; Wherein, k, m and n are not 0 simultaneously.
R in the described formula (a) is selected from a kind of in the following structural unit:
(b)CH
3(CH
2)
z-O-
Wherein, z is 0～10 integer; Be preferably 0～5 integer.
EO, PO in the described formula (a) and BO segmental arrangement mode are block or random assorted embedding.
Described poly-alkoxylation compound can prepare by following high pressure synthetic method:
In high-pressure reactor, add an amount of initiator and catalyzer (the minimum add-on of determining initiator according to the size and the proportioning situation of reactor, catalytic amount be finished weight 0.05～0.3%), sealing equipment, nitrogen replacement afterwards, heat up, when reaching 60～140 ℃, temperature feeds a small amount of epoxy alkane raw material, when temperature rising pressure descends initiation reaction is described, feed the epoxy alkane raw material of proportional quantity (raw material according to different molecular weight is determined) afterwards, control reaction temperature 60～180 ℃ and still internal pressure at 0.2～0.6Mpa, reaction finishes, after the no longer decline that the still internal pressure drops to continuous 30 minutes gradually, aging cooling discharge promptly gets described poly-alkoxylation compound.
Described initiator can be methyl alcohol, ethylene glycol, butanols, propylene glycol, nonyl phenol, glycerine, Diethylene Glycol, dipropylene glycol, Virahol or castor-oil plant wet goods; Described catalyzer is an acidic catalyst BF
3Etherate, KOH, NaOH or alkaline-earth metal composite catalyst etc.
Described epoxy alkane raw material is one of oxyethane, propylene oxide, butylene oxide ring or its two or more mixture.
Described anti-extreme pressure chelating anti-settling agent is selected from: structure is respectively the mixture of two kinds of compounds of formula (i) and formula (j), arbitrary water-soluble organic titanate compounds, arbitrary structural formula and is the Viscotrol C poly-alkoxylation thing of (k) or any mixture of being made up of them
In formula (i), (j) and the formula (k), a, b and c be 0～30 real number and be not 0 simultaneously, and preferred a is 0～20 real number, and b and c are 0～10 real number, and a, b and c are not 0 simultaneously; In formula (i) and the formula (j), M is hydrogen or pure amine unit, preferred alcohol amine, diethanolamine or trolamine; R
1Structure be selected from following structural unit:
Wherein, the R in the formula (m)
2Be C
1～C
10Alkyl, preferred C
4～C
10Alkyl.
EO, PO in described formula (i), formula (j) and the formula (k) and BO segmental arrangement mode are block or random assorted embedding.
The mixture that described structure is respectively two kinds of compounds of formula (i) and formula (j) can prepare according to following normal pressure esterification synthetic method:
1) be the high pressure synthetic method of initiator with alkylphenol, alkoxyl group Viscotrol C, prepare the compound that structure is a following formula according to above-mentioned synthetic poly-alkoxylation compound:
R
1-(EO)
a(PO)
b(BO)
cH
2) compound that adds the step 1) preparation in normal pressure reactor is warmed up to 40～120 ℃ as initial starting material, slowly adds phosphorylation agent (P in 20～120 minutes in batches
2O
5), the initial starting material that add and the mol ratio of phosphoric are controlled at 1～3: 1, after adding phosphorylation agent, be incubated 60～240 minutes down at 40～120 ℃, add the hydramine neutralizing agent down at 40～120 ℃ afterwards, reach 5～7 until product pH value, promptly get the mixture that structure is respectively above-mentioned two kinds of compounds of formula (i) and formula (j).
Described hydramine neutralizing agent comprises thanomin, diethanolamine or trolamine.
Described water-soluble organic titanate class is the water-soluble organic titanate of metal ion not, the mixture of one or more of preferred hydramine chelating class titanic acid ester, be selected from: two (trolamine) metatitanic acid diisopropyl ester, tetraisopropoxy titanium, sec.-propyl two oleic acid acyloxy (dioctyl phosphoric acid acyloxy) titanic acid ester, sec.-propyl three (dioctyl phosphoric acid acyloxy) titanic acid ester, sec.-propyl three oleic acid acyloxy titanic acid ester, sec.-propyl three (dioctylphyrophosphoric acid acyloxy) titanic acid ester, Di(dioctylpyrophosphato) ethylene titanate, the inner complex of Di(dioctylpyrophosphato) ethylene titanate and trolamine, tetra isopropyl two (dioctyl phosphorous acid acyloxy) titanic acid ester, 2,2 '; 2 " the mixture of one or more of solution such as-nitrogen base triethyl titanic acid ester triglycol, perhaps they separately with the inner complex of hydramine in one or more mixture.
Described dissolution accelerator is low molecular unit alcohol, polyvalent alcohol, unit hydramine or polyhydric alcohol amine.Wherein preferred ethylene glycol, propylene glycol, Diethylene Glycol, dipropylene glycol, Virahol, butanols, ethanol, thanomin, diethanolamine or trolamine or the like.
Cutting fluid of the present invention can prepare according to following normal pressure preparation method:
Under 20～120 ℃, after described poly-alkoxylation compound, anti-extreme pressure chelating anti-settling agent and dissolution accelerator mixed according to described weight percent, stir and promptly obtained described water-soluble metalworking liquid in 10～60 minutes.
The present invention also provides the application of described water-soluble metalworking liquid aspect hard brittle material processing such as silicon single crystal, polysilicon, germanium, gallium arsenide, quartz, InGaN or jewel.
Compared with prior art, beneficial effect of the present invention mainly is:
1. this product and product application are pollution-free, and this product is a water-soluble products, pollute and injury using the on-the-spot no environment and the person;
2. this product does not have corrosion to equipment, and this product does not contain moisture content, to the influence of cutting facility non-corroding;
3. this product specific conductivity is lower, contains the minute quantity ion and does not contain heavy metal substantially, has the anti-heavy function of chelating preferably, and is all beneficial to cutting process, raising wafer surface quality and raising yield rate.
Embodiment
The present invention is further illustrated below in conjunction with embodiment and experimental data, but the present invention is not limited to the following example.
All chemical reagent and the abrasive material that use in following examples are the commercially available prod.
Embodiment 1
1) in the high pressure polymerisation reactor of white steel, vacuum adds 4.5kg ethylene glycol and 0.1Kg KOH, sealing, and behind the nitrogen replacement, intensification is also opened and is stirred.When temperature in the kettle reaches 90～100 ℃, add the 0.5Kg propylene oxide, when temperature raises, after pressure descends, continue to feed the propylene oxide of 18.5Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, when adding, propylene oxide finishes, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, add 0.5Kg oxyethane, when temperature raises, after pressure descends, continue to feed the oxyethane of 72Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, reaction finishes, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, cooling promptly gets the poly-alkoxylation compound constituent monomers 96Kg in the cutting fluid, and its skeleton symbol is:
H(EO)
11.35(PO)
2.25OCH
2CH
2O(PO)
2.25(EO)
11.35H
Or
C
2H
5O
2(PO)
4.5(EO)
22.7H
2) under 25 ℃, vacuum adds the following NP-10 phosphoesterase 30 .05Kg of structural formula in the poly-alkoxylation compound of step 1) preparation, and ethylene glycol 4Kg stirs and promptly got cutting fluid OX-001 in 20 minutes.
Use the cutting fluid of foregoing invention, and homemade abrasive material sand (cutting fluid OX-001 and 1200# sand mass ratio are 1: 0.90), on the HCT machine, carry out the cutting of 6 cun sheets of silicon single crystal, single batch goes out about 4000 of silicon chips altogether, the silicon chip easy cleaning, average yield rate is 96.2%.
Embodiment 2
1) in the high pressure polymerisation reactor of white steel, vacuum adds 2.5kg methyl alcohol and 0.1Kg KOH, sealing, and behind the nitrogen replacement, intensification is also opened and is stirred.When temperature in the kettle reaches 65～85 ℃, the mixture that adds 0.25Kg oxyethane and 0.25Kg propylene oxide, after temperature raises, pressure descends, continue to feed the propylene oxide of 17Kg and the oxyethane mixture of 67.5Kg, 90～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, when adding, oxyethane, propylene oxide mixture finish, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, cooling promptly gets the poly-alkoxylation compound constituent monomers 87.5Kg of cutting fluid, and its skeleton symbol is: CH
3O[(EO)
19.7/ (PO)
3.8] H
2) under 30 ℃, vacuum adds 2.5Kg castor oil polyoxyethylene ether (EL-20) and propylene glycol 10Kg in the monomer of step 1) preparation, stirs and promptly gets cutting fluid OX-002 in 40 minutes.
Use the cutting fluid of foregoing invention, and homemade abrasive material sand (cutting fluid OX-002 and 1000# sand mass ratio are 1: 1.40), on the U-600 machine, carry out the cutting of 4 cun sheets of gallium arsenide, single batch is total to about 240 of slices, the sheet easy cleaning, average yield rate is 88.7%.
Embodiment 3
1) in the high pressure polymerisation reactor, vacuum adds 12kg Virahol and 0.1Kg KOH, and sealing behind the nitrogen replacement, heats up and the unlatching stirring.When temperature in the kettle reaches 90～100 ℃, add 0.5Kg oxyethane, when temperature raises, after pressure descends, continue to feed the oxyethane of 80Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, when adding, oxyethane finishes, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, add the 0.5Kg propylene oxide, when temperature raises, after pressure descends, continue to feed the propylene oxide of 6Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, reaction finishes, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, cooling promptly gets the poly-alkoxylation compound constituent monomers 99Kg of cutting fluid, and its skeleton symbol is:
2) under 45 ℃, vacuum adds two (trolamine) metatitanic acid diisopropyl ester 0.7Kg in the monomer of step 1) preparation, and trolamine 2Kg stirs and promptly got cutting fluid OX-003 in 10 minutes.
Use the cutting fluid of foregoing invention, and homemade abrasive material sand (cutting fluid OX-003 and 1500# sand mass ratio are 1: 0.92), on the NTC machine, carry out the cutting of 8 cun sheets of polysilicon, single batch goes out about 1500 of silicon chips altogether, the silicon chip easy cleaning, average yield rate is 95.2%.
Embodiment 4
1) in the high pressure polymerisation reactor, vacuum adds 12kg ethylene glycol and 0.03Kg KOH, and sealing behind the nitrogen replacement, heats up and the unlatching stirring.When temperature in the kettle reaches 90～100 ℃, add the 0.5Kg propylene oxide, after temperature raises, pressure descends, continue to feed the propylene oxide of 17.5Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa finish when propylene oxide adds, after the no longer decline that the still internal pressure drops to continuous 30 minutes gradually, promptly get poly-alkoxylation monomer adduct A with discharging in the cooling, its skeleton symbol is:
C
2H
5O
2(PO)
1.6H
2) in the high pressure polymerisation reactor, vacuum adds 18kg propylene glycol and 0.07Kg KOH, and sealing behind the nitrogen replacement, heats up and the unlatching stirring.When temperature in the kettle reaches 90～100 ℃, add 1Kg oxyethane, after temperature raises, pressure descends, continue to feed the oxyethane of 51.2Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa finish when oxyethane adds, after the no longer decline that the still internal pressure drops to continuous 30 minutes gradually, promptly get poly-alkoxylation monomer adduct B with discharging in the cooling, its skeleton symbol is:
C
3H
7O
2(EO)
5H
3) monomer A and the 70Kg step 2 that the 30Kg step 1) is prepared) monomers B of preparation stirs and promptly got cutting fluid OX-004 in 50 minutes after mixing under 80 ℃.
Use the cutting fluid of foregoing invention, and homemade abrasive material sand (cutting fluid OX-004 and 1500# sand mass ratio are 1: 0.92), on MEYER BUGER265 machine, carry out the cutting of 6 cun sheets of silicon single crystal, single batch goes out about 1500 of silicon chips altogether, the silicon chip easy cleaning, average yield rate is 94.2%.
Embodiment 5
1) in the high pressure polymerisation reactor, vacuum adds the NaOH of 20kg glycerine (glycerol) and 0.1Kg, and sealing behind the nitrogen replacement, heats up and the unlatching stirring.When temperature in the kettle reaches 110～120 ℃, add 0.8Kg oxyethane, when temperature raises, after pressure descends, continue to feed the oxyethane of 47Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, when adding, oxyethane finishes, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, add the 0.7Kg butylene oxide ring, when temperature raises, after pressure descends, continue to feed the butylene oxide ring of 15Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, reaction finishes, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, cooling promptly gets the poly-alkoxylation compound constituent monomers 83Kg of cutting fluid, and its skeleton symbol is:
C
3H
7O
3(EO)
5(BO)
1H
2) under 25 ℃, vacuum adds two (trolamine) metatitanic acid diisopropyl ester 0.2Kg in the monomer of step 1) preparation, and sec.-propyl three (dioctylphyrophosphoric acid acyloxy) titanic acid ester 0.1Kg and Diethylene Glycol 8Kg stir and promptly got cutting fluid OX-005 in 10 minutes.
Use the cutting fluid of foregoing invention, and homemade abrasive material sand (cutting fluid OX-005 and 1500# sand mass ratio are 1: 0.92), on the NTC machine, carry out the cutting of 6 cun sheets of silicon single crystal, single batch goes out about 1500 of silicon chips altogether, the silicon chip easy cleaning, average yield rate is 95%.
Embodiment 6
1) in the high pressure polymerisation reactor, vacuum adds the NaOH of 20kg Diethylene Glycol and 0.1Kg, and sealing behind the nitrogen replacement, heats up and the unlatching stirring.When temperature in the kettle reaches 110～120 ℃, add the 0.8Kg butylene oxide ring, when temperature raises, after pressure descends, continue to feed the butylene oxide ring of 6Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, when adding, butylene oxide ring finishes, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, add 0.2Kg oxyethane, when temperature raises, after pressure descends, continue to feed the oxyethane of 33Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa, reaction finishes, after dropping to continuous 30 minutes gradually and no longer descend to the still internal pressure, cooling promptly gets the poly-alkoxylation compound constituent monomers 60Kg of cutting fluid, and its skeleton symbol is:
C
4H
9O
3(BO)
0.5(EO)
4H
2) the anti-extreme pressure chelating anti-settling agent of preparation
2.1) the high pressure synthetic raw material
In the high pressure polymerisation reactor, vacuum adds 10kg nonyl phenol and 0.03Kg KOH, and sealing behind the nitrogen replacement, heats up and the unlatching stirring.When temperature in the kettle reaches 100～120 ℃, add 0.5Kg oxyethane, after temperature raises, pressure descends, continue to feed the oxyethane of 7.5Kg, 120～160 ℃ of control reaction temperature and still internal pressure 0.3～0.6Mpa finish when oxyethane adds, after the no longer decline that the still internal pressure drops to continuous 30 minutes gradually, promptly get NP-4[polyoxyethylene nonylphenol ether (4EO) with discharging in the cooling], its skeleton symbol is:
2.2) the synthetic anti-extreme pressure chelating anti-settling agent of normal pressure esterification
In normal pressure reactor, add initial material N P-4[polyoxyethylene nonylphenol ether (4EO)] 1.5Kg, heat up 50～80 ℃, in 60 minutes, slowly add phosphorylation agent (P in batches
2O
5) 0.15Kg, after adding phosphorylation agent, be incubated 120 minutes down at 60～80 ℃, add trolamine neutralizing agent 0.3Kg down at 60～70 ℃ afterwards, transferring pH value is 6.0 promptly to get and resist extreme pressure chelating anti-settling agent 1.9Kg, and it is made of two kinds of components, is respectively the compound shown in the following skeleton symbol:
3) under 25 ℃, vacuum adds step 2 in the monomer of step 1) preparation) the anti-extreme pressure chelating anti-settling agent 1.15Kg and the propylene glycol 8Kg of preparation, stir and promptly got cutting fluid OX-006 in 10 minutes.
Use the cutting fluid of foregoing invention, and homemade abrasive material sand (cutting fluid OX-006 and 1500# sand mass ratio are 1: 0.95), on the NTC machine, carry out the cutting of 6 cun sheets of silicon single crystal, single batch goes out about 1500 of silicon chips altogether, the silicon chip easy cleaning, average yield rate is 95.5%.
Claims (13)
1. hard brittle material water-soluble metalworking liquid is characterized in that containing following components in weight percentage:
Poly-alkoxylation compound 70～100%
Anti-extreme pressure chelating anti-settling agent 0～15%
Dissolution accelerator 0～15%
2. the described water-soluble metalworking liquid of claim 1 is characterized in that described poly-alkoxylation compound is made up of the mixture of one or more compounds of following skeleton symbol (a) expression:
(a)R[(EO)
k(PO)
m(BO)
n]H
Wherein, k, m and n get 0～30 real number, and k, m and n are not 0 simultaneously; R is primary, a kind of in the unit of the second month in a season or tertiary carbon or the polynary alkoxyl group.
3. the described water-soluble metalworking liquid of claim 2 is characterized in that R in the described formula (a) is selected from a kind of in the following structural unit:
(b)CH
3(CH
2)
z-O-
Wherein, z is 0～10 integer.
4. the described water-soluble metalworking liquid of claim 2, it is characterized in that: EO, PO in the described formula (a) and BO segmental arrangement mode are block or random assorted embedding.
5. the described water-soluble metalworking liquid of claim 1, it is characterized in that described anti-extreme pressure chelating anti-settling agent is that mixture, arbitrary water-soluble organic titanate compounds or the arbitrary structural formula that structure is respectively two kinds of compounds of formula (i) and formula (j) is the Viscotrol C poly-alkoxylation thing of (k), or any mixture of forming by them
In formula (i), formula (j) and the formula (k), a, b and c are 0～30 real number and are not 0 simultaneously; In formula (i) and the formula (j), M is hydrogen or pure amine unit, R
1Structure be selected from following structural unit:
Wherein, the R in the formula (m)
2Be C
1～C
10Alkyl.
6. the described water-soluble metalworking liquid of claim 5, it is characterized in that: in described formula (i), formula (j) and the formula (k), a is 0～20 real number, and b and c are 0～10 real number, and a, b and c are not 0 simultaneously; The M of formula (i) and formula (j) is thanomin, diethanolamine or trolamine; R in the described formula (m)
2Be C
4～C
10Alkyl.
7. the described water-soluble metalworking liquid of claim 5, it is characterized in that: EO, PO in described formula (i), formula (j) and the formula (k) and BO segmental arrangement mode are block or random assorted embedding.
8. the described water-soluble metalworking liquid of claim 5 is characterized in that: described water-soluble organic titanate class is the water-soluble organic titanate of metal ion not.
9. the described water-soluble metalworking liquid of claim 8 is characterized in that: the water-soluble organic titanate of described not metal ion is one or more a mixture of hydramine chelating class titanic acid ester.
10. the described water-soluble metalworking liquid of claim 9, it is characterized in that: described hydramine chelating class titanic acid ester is selected from: two (trolamine) metatitanic acid diisopropyl ester, tetraisopropoxy titanium, sec.-propyl two oleic acid acyloxy (dioctyl phosphoric acid acyloxy) titanic acid ester, sec.-propyl three (dioctyl phosphoric acid acyloxy) titanic acid ester, sec.-propyl three oleic acid acyloxy titanic acid ester, sec.-propyl three (dioctylphyrophosphoric acid acyloxy) titanic acid ester, Di(dioctylpyrophosphato) ethylene titanate, the inner complex of Di(dioctylpyrophosphato) ethylene titanate and trolamine, tetra isopropyl two (dioctyl phosphorous acid acyloxy) titanic acid ester, 2,2 '; 2 " the mixture of one or more of-nitrogen base triethyl titanic acid ester triglycol solution, perhaps they separately with the inner complex of hydramine in one or more mixture.
11. the described water-soluble metalworking liquid of claim 1 is characterized in that: described dissolution accelerator is low molecular unit alcohol, polyvalent alcohol, unit hydramine or polyhydric alcohol amine.
12. the described water-soluble metalworking liquid of claim 11 is characterized in that: described dissolution accelerator is ethylene glycol, propylene glycol, Diethylene Glycol, dipropylene glycol, Virahol, butanols, ethanol, thanomin, diethanolamine or trolamine.
13. the application of the described water-soluble metalworking liquid of claim 1 aspect the processing of silicon single crystal, polysilicon, germanium, gallium arsenide, quartz, InGaN or jewel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103012388A CN101205498B (en) | 2007-12-17 | 2007-12-17 | Cutting fluid for hard brittle material and uses thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007103012388A CN101205498B (en) | 2007-12-17 | 2007-12-17 | Cutting fluid for hard brittle material and uses thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101205498A true CN101205498A (en) | 2008-06-25 |
| CN101205498B CN101205498B (en) | 2010-06-09 |
Family
ID=39565981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007103012388A Active CN101205498B (en) | 2007-12-17 | 2007-12-17 | Cutting fluid for hard brittle material and uses thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101205498B (en) |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101712907A (en) * | 2009-08-26 | 2010-05-26 | 辽阳科隆化学品有限公司 | Composition and application combination of water-soluble silicon material cutting fluid |
| CN101928628A (en) * | 2010-06-10 | 2010-12-29 | 武汉永正科技发展有限公司 | Alkyl oxide modified colza oil lubricant additive, lubricant and preparation method thereof |
| CN101935576A (en) * | 2010-10-09 | 2011-01-05 | 辽宁奥克化学股份有限公司 | Cutting fluid with anti-oxidation performance, preparation method and application thereof |
| CN101935580A (en) * | 2010-10-09 | 2011-01-05 | 辽宁奥克化学股份有限公司 | Water-based cutting fluid for hard and crisp material |
| CN101935579A (en) * | 2010-10-09 | 2011-01-05 | 辽宁奥克化学股份有限公司 | Water-base cutting liquid for hard and brittle materials and preparation method and application thereof |
| CN102021070A (en) * | 2010-12-14 | 2011-04-20 | 南通宏申化工有限公司 | Cutting fluid for water-soluble monocrystalline silicon wafers or polycrystalline silicon wafers |
| CN102311863A (en) * | 2010-07-09 | 2012-01-11 | 气体产品与化学公司 | Method for wafer dicing and composition useful thereof |
| WO2012016976A1 (en) | 2010-08-03 | 2012-02-09 | Basf Se | Carrier fluids for abrasives |
| CN103119143A (en) * | 2010-09-24 | 2013-05-22 | 艺康美国股份有限公司 | Conveyor lubricants including emulsions and methods employing them |
| WO2013113859A1 (en) | 2012-02-01 | 2013-08-08 | Basf Se | Cooling and/or lubricating fluids for wafer production |
| US8580656B2 (en) | 2008-07-14 | 2013-11-12 | Air Products And Chemicals, Inc. | Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor |
| CN105164032A (en) * | 2013-03-11 | 2015-12-16 | 艺康美国股份有限公司 | Lubrication of transfer plates using an oil or oil in water emulsions |
| CN107033655A (en) * | 2016-11-28 | 2017-08-11 | 东莞市隆海新材料科技有限公司 | A kind of water-based stoving paint coating anti-settling agent and its preparation method and application |
| CN107629850A (en) * | 2017-10-12 | 2018-01-26 | 广东布雷达科技股份有限公司 | Long-life wear-resistant gear box oil and preparation method thereof |
| CN108949296A (en) * | 2018-08-15 | 2018-12-07 | 江苏四新界面剂科技有限公司 | Monocrystalline silicon cutting surfaces activating agent |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5064500A (en) * | 1987-06-01 | 1991-11-12 | Henkel Corporation | Surface conditioner for formed metal surfaces |
| US5389199A (en) * | 1987-06-01 | 1995-02-14 | Henkel Corporation | Aqueous lubricant and surface conditioner for formed metal surfaces |
-
2007
- 2007-12-17 CN CN2007103012388A patent/CN101205498B/en active Active
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8580656B2 (en) | 2008-07-14 | 2013-11-12 | Air Products And Chemicals, Inc. | Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor |
| CN101712907A (en) * | 2009-08-26 | 2010-05-26 | 辽阳科隆化学品有限公司 | Composition and application combination of water-soluble silicon material cutting fluid |
| CN101928628B (en) * | 2010-06-10 | 2012-12-05 | 武汉永正科技发展有限公司 | Alkyl oxide modified colza oil lubricant additive, lubricant and preparation method thereof |
| CN101928628A (en) * | 2010-06-10 | 2010-12-29 | 武汉永正科技发展有限公司 | Alkyl oxide modified colza oil lubricant additive, lubricant and preparation method thereof |
| US9328318B2 (en) | 2010-07-09 | 2016-05-03 | Air Products And Chemicals, Inc. | Method for wafer dicing and composition useful thereof |
| CN102311863B (en) * | 2010-07-09 | 2015-06-24 | 气体产品与化学公司 | Method for wafer dicing and composition useful thereof |
| US8883701B2 (en) | 2010-07-09 | 2014-11-11 | Air Products And Chemicals, Inc. | Method for wafer dicing and composition useful thereof |
| CN102311863A (en) * | 2010-07-09 | 2012-01-11 | 气体产品与化学公司 | Method for wafer dicing and composition useful thereof |
| CN103154214A (en) * | 2010-08-03 | 2013-06-12 | 巴斯夫欧洲公司 | Carrier fluids for abrasives |
| WO2012016976A1 (en) | 2010-08-03 | 2012-02-09 | Basf Se | Carrier fluids for abrasives |
| CN104987944A (en) * | 2010-09-24 | 2015-10-21 | 艺康美国股份有限公司 | Conveyor lubricants including emulsions and methods employing them |
| CN103119143A (en) * | 2010-09-24 | 2013-05-22 | 艺康美国股份有限公司 | Conveyor lubricants including emulsions and methods employing them |
| CN101935580A (en) * | 2010-10-09 | 2011-01-05 | 辽宁奥克化学股份有限公司 | Water-based cutting fluid for hard and crisp material |
| CN101935576A (en) * | 2010-10-09 | 2011-01-05 | 辽宁奥克化学股份有限公司 | Cutting fluid with anti-oxidation performance, preparation method and application thereof |
| CN101935579A (en) * | 2010-10-09 | 2011-01-05 | 辽宁奥克化学股份有限公司 | Water-base cutting liquid for hard and brittle materials and preparation method and application thereof |
| CN101935580B (en) * | 2010-10-09 | 2013-03-13 | 辽宁奥克化学股份有限公司 | Water-based cutting fluid for hard and crisp material |
| CN101935579B (en) * | 2010-10-09 | 2013-07-03 | 辽宁奥克化学股份有限公司 | Water-base cutting liquid for hard and brittle materials and preparation method and application thereof |
| CN102021070A (en) * | 2010-12-14 | 2011-04-20 | 南通宏申化工有限公司 | Cutting fluid for water-soluble monocrystalline silicon wafers or polycrystalline silicon wafers |
| CN102021070B (en) * | 2010-12-14 | 2013-01-30 | 南通宏申化工有限公司 | Water-soluble monocrystalline silicon wafer or polycrystalline silicon wafer cutting fluid |
| WO2013113859A1 (en) | 2012-02-01 | 2013-08-08 | Basf Se | Cooling and/or lubricating fluids for wafer production |
| CN105164032A (en) * | 2013-03-11 | 2015-12-16 | 艺康美国股份有限公司 | Lubrication of transfer plates using an oil or oil in water emulsions |
| CN105164032B (en) * | 2013-03-11 | 2018-02-02 | 艺康美国股份有限公司 | Use oil or oil-in-water emulsion lubrication transfer blade |
| US11788028B2 (en) | 2013-03-11 | 2023-10-17 | Ecolab Usa Inc. | Lubrication of transfer plate using an oil or oil in water emulsions |
| CN107033655A (en) * | 2016-11-28 | 2017-08-11 | 东莞市隆海新材料科技有限公司 | A kind of water-based stoving paint coating anti-settling agent and its preparation method and application |
| CN107629850A (en) * | 2017-10-12 | 2018-01-26 | 广东布雷达科技股份有限公司 | Long-life wear-resistant gear box oil and preparation method thereof |
| CN108949296A (en) * | 2018-08-15 | 2018-12-07 | 江苏四新界面剂科技有限公司 | Monocrystalline silicon cutting surfaces activating agent |
| CN108949296B (en) * | 2018-08-15 | 2021-11-05 | 江苏四新界面剂科技有限公司 | Monocrystalline silicon cutting surfactant |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101205498B (en) | 2010-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101205498B (en) | Cutting fluid for hard brittle material and uses thereof | |
| CN102212412B (en) | Water-based cutting fluid treated with surfactant and preparation method thereof | |
| CN102618376B (en) | Diamond abrasive wire cutting fluid for semiconductor precision sheet and preparation method of diamond abrasive wire cutting fluid | |
| CN101935579B (en) | Water-base cutting liquid for hard and brittle materials and preparation method and application thereof | |
| CN102433191B (en) | Silicon carbide cutting fluid and using method thereof | |
| CN101798198A (en) | Polycarboxylic acid cement activation reinforced grinding aid and preparation method thereof | |
| CN101812348A (en) | Diesel pour point depressant | |
| CN103952211A (en) | Composite cutting fluid used for solar silicon wafer manufacturing and its preparation method | |
| CN102041138B (en) | Additive for improving utilization ratio of silicon crystal line cutting mortar as well as preparation method and application method of addictive | |
| CN102433213A (en) | Preparation method for high-grade borate type brake fluid | |
| CN105085282B (en) | Preparation method for alkyl alcohol amine | |
| CN101139535A (en) | Environment-protection energy-saving gas for welding and cutting | |
| CN103639063B (en) | A kind of silicon carbide micro-powder reclaims medicament | |
| CN104017637B (en) | A kind of environment-friendly type microemulsified micro cutting liquid and preparation method thereof | |
| CN104911578A (en) | Green environment-friendly aqueous rust inhibitor and preparation method thereof | |
| CN101935577B (en) | Modified recovered cutting fluid | |
| CN116814234A (en) | Discharge assisting agent for fracturing and preparation method and application thereof | |
| CN102807933A (en) | Non-setting adhesive cleaning agent and preparation method thereof | |
| CN102173627A (en) | Composite blending material of slag powder and use method | |
| CN108383407B (en) | A kind of cement grinding aid and method for preparing the cement grinding aid by using chemical waste liquid | |
| CN105733833A (en) | Environment-friendly paraffin removal material and preparation method thereof | |
| CN105908193A (en) | Preparation method of environment-friendly metal surface cleaning agent | |
| WO2020033935A1 (en) | Efficient formulation stable crude glycerine grinding additive | |
| CN102433190B (en) | Diamond linear cutting fluid and preparation method thereof | |
| CN115536829B (en) | Synthesis method of fatty acid monoethanolamide polyoxyethylene ether |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GUANGDONG AOKE CHEMNICAL CO., LTD. JILIN AOKE NEW |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20101122 Address after: 111003 East Ring Road, Hongwei District, Liaoning, Liaoyang, China, 29 Co-patentee after: Guangdong Oxiranchem Chemical Co., Ltd. Patentee after: Liaoning Oxiranchem Group Co., Ltd. Co-patentee after: Jilin Oxiranchem New Material Co., Ltd. Co-patentee after: Oxiranchem (Yangzhou) Co., Ltd. Address before: 111003 East Ring Road, Hongwei District, Liaoning, Liaoyang, China, 29 Patentee before: Liaoning Oxiranchem Group Co., Ltd. |
|
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 111003 East Ring Road, Hongwei District, Liaoning, Liaoyang, China, 29 Patentee after: Liaoning Oxiranchem Group Co., Ltd. Patentee after: Guangdong Oxiranchem Chemical Co., Ltd. Patentee after: Jilin Oxiranchem New Material Co., Ltd. Patentee after: Jiangsu oxiranchem Co., Ltd. Address before: 111003 East Ring Road, Hongwei District, Liaoning, Liaoyang, China, 29 Patentee before: Liaoning Oxiranchem Group Co., Ltd. Patentee before: Guangdong Oxiranchem Chemical Co., Ltd. Patentee before: Jilin Oxiranchem New Material Co., Ltd. Patentee before: Oxiranchem (Yangzhou) Co., Ltd. |