CN101202421A - Nitride-based semiconductor device and method of fabricating the same - Google Patents

Abstract

A nitride-based semiconductor device includes a substrate constituted by nitride-based semiconductor, a nitride-based semiconductor layer formed on the substrate and constituted by nitride-based semiconductor, formed with a light waveguide extending in a first direction, and first step portions formed at least on regions other than the vicinity of facets of the light waveguide from a surface opposite to a side where the nitride-based semiconductor layer of the substrate is formed along the first direction in which the light waveguide extends.

Description

Nitride-based semiconductor device and manufacture method thereof

The cross reference of related application

The application quotes its content as a reference based on Japanese patent application JP2006-323582 and JP2007-283225 at this.

Technical field

The present invention relates to a kind of nitride-based semiconductor device and manufacture method thereof, relate in particular to the nitride-based semiconductor device and the manufacture method thereof that comprise the operation that forms element divisions usefulness groove.

Background technology

Always, the known manufacture method that the nitride-based semiconductor device that comprises the operation that forms element divisions usefulness groove is arranged.For example open the manufacture method that discloses this nitride-based semiconductor device in the 2005-136093 communique the Japan Patent spy.

Open above-mentioned Japan Patent spy and to disclose a kind of manufacture method that comprises the semiconductor element of following operation in the 2005-136093 communique: the operation that on the GaN substrate, forms semiconductor layer with ridged (ridge) portion (fiber waveguide); Form the operation of laser resonator bar by riving along the direction of regulation; Use marking-off pins (diamond needle) etc. form the operation that element separates groove (element divisions groove) from semiconductor layer side at the laser resonator bar; With cut apart the operation that laser resonator forms semiconductor Laser device by separate groove along element.

But, open in the manufacture method of the conventional semiconductor element that proposes in the 2005-136093 communique the Japan Patent spy, because forming element from semiconductor layer side at the laser resonator bar, use marking-off pin (diamond needle) etc. separate groove (element divisions groove), so when forming element separation groove, exist because of marking-off pin (diamond needle) is contacted with semiconductor layer, and on semiconductor layer, crack or damaged, cause such improper of damage for ridged portion (fiber waveguide).Consequently exist and produce the such problem points of ridged portion damage.

Summary of the invention

The manufacture method of the nitride-based semiconductor device of a first aspect of the present invention comprises: the operation that forms the nitride-based semiconductor layer with the fiber waveguide (waveguide) of extending along first direction on substrate; Carry out first operation of cutting apart along the second direction that the first direction with the fiber waveguide extension intersects; Surface in a side opposite with a side that is formed with the nitride-based semiconductor layer of substrate, and with extend along second direction based on first divisional plane of cutting apart at interval in the zone of predetermined distance, form the element divisions of extending along first direction operation with groove by irradiating laser; With cut apart the operation that forms nitride-based semiconductor device by carrying out second with groove along element divisions.

The nitride-based semiconductor device of a second aspect of the present invention comprises: the substrate that is made of nitride-based semiconductor; The nitride-based semiconductor layer that on substrate, forms, constitute by the nitride-based semiconductor that is formed with the fiber waveguide of extending along first direction; In near at least the end face of fiber waveguide the zone, in the first direction that extends along fiber waveguide, the first step portion that forms from the surface of a side opposite with a side that is formed with the nitride-based semiconductor layer of substrate.

Description of drawings

Fig. 1 is the stereogram of an example of the structure that forms of the manufacture process of the GaN based semiconductor laser chip of expression by first execution mode of the present invention.

Fig. 2 is near the sectional view of the detailed structure of the semiconductor layer of the central authorities of expression GaN based semiconductor laser chip shown in Figure 1.

Fig. 3 is the stereogram of another example of the structure that forms of the manufacture process of the GaN based semiconductor laser chip of expression by first execution mode of the present invention.

Fig. 4 is the stereogram of the structure of the GaN based semiconductor laser chip of another example that expression will first execution mode shown in Figure 3 when being installed on the base station that dispels the heat.

Fig. 5 is the stereogram that is used to illustrate the manufacture process (wafer process) under the wafer state of GaN based semiconductor laser chip of first execution mode shown in Figure 1.

Fig. 6 is the plane graph that is used to illustrate the manufacture process (wafer process) under the wafer state of GaN based semiconductor laser chip of first execution mode shown in Figure 1.

Fig. 7 is the stereogram that is used to illustrate the manufacture process (chip process) that the wafer process of GaN based semiconductor laser chip of first execution mode shown in Figure 1 is later.

Fig. 8 is the stereogram that is used to illustrate the manufacture process (chip process) that the wafer process of GaN based semiconductor laser chip of first execution mode shown in Figure 1 is later.

Fig. 9 is the stereogram that is used to illustrate the manufacture process (chip process) that the wafer process of GaN based semiconductor laser chip of first execution mode shown in Figure 1 is later.

Figure 10 is the stereogram that is used to illustrate the manufacture process (chip process) that the wafer process of GaN based semiconductor laser chip of first execution mode shown in Figure 1 is later.

Figure 11 is the stereogram of the first GaN based semiconductor laser chip that changes example that expression will the first execution mode of the present invention structure when being installed on the base station that dispels the heat.

Figure 12 is the stereogram of structure of the GaN based semiconductor laser chip of expression second execution mode of the present invention.

Figure 13 is the stereogram of structure of the GaN based semiconductor laser chip of expression second execution mode of the present invention.

Figure 14 is the stereogram of manufacture process that is used to illustrate the GaN based semiconductor laser chip of the Figure 12 and second execution mode shown in Figure 13.

Figure 15 is the stereogram of structure of the GaN based semiconductor laser chip of expression the 3rd execution mode of the present invention.

Figure 16 is the stereogram of GaN based semiconductor laser chip that expression will the 3rd execution mode shown in Figure 15 structure when being installed on the base station that dispels the heat.

Figure 17 is the stereogram of manufacture process that is used to illustrate the GaN based semiconductor laser chip of Figure 15 and the 3rd execution mode shown in Figure 16.

Figure 18 is the stereogram of the structure of the GaN based semiconductor laser chip of the variation example that expression will the 3rd execution mode of the present invention when being installed on the base station that dispels the heat.

Figure 19 is the stereogram that second of expression first execution mode of the present invention changes the structure of routine GaN based semiconductor laser chip.

Figure 20 is the stereogram that the 3rd of expression first execution mode of the present invention changes the structure of routine GaN based semiconductor laser chip.

Figure 21 is the stereogram that the 4th of expression first execution mode of the present invention changes the structure of routine GaN based semiconductor laser chip.

Embodiment

(first execution mode)

At first, with reference to Fig. 1 and Fig. 2, an example (semiconductor laser chip 20a) of the structure that the manufacture process of the GaN based semiconductor laser chip by first execution mode is formed describes.Wherein, the GaN based semiconductor laser chip of first execution mode is the semiconductor laser chip (bluish-violet color laser diode) with resonance wavelength of 400nm wave band.

In the semiconductor laser chip 20a of an example of first execution mode, as shown in Figure 1, on n type GaN substrate 1, be formed with the nitride-based semiconductor layer 2 that comprises active layer 14 described later (with reference to Fig. 2) and have the pn knot.And n type GaN substrate 1 is an example of " substrate " of the present invention.

At this, in the semiconductor laser chip 20a of an example of first execution mode, as shown in Figure 1,, form the defective concentrated area 30 of the many linearities of crystal defect in the end of the side (arrow mark A direction one side) of n type GaN substrate 1 and semiconductor layer 2.This n type GaN substrate 1 is to form the substrate that crystal defect reduces the crystal defect of broader region in addition by concentrating in the zone (defective concentrated area 30) of regulation.Here, semiconductor layer 2 is examples of " nitride-based semiconductor layer " of the present invention.

In addition, the length (width) of the arrow mark A direction of semiconductor laser chip 20a (arrow mark B direction) is formed about 200 μ m, simultaneously, in fact be formed about 400 μ m with the length (degree of depth) of the C direction of arrow mark A direction (arrow mark B direction) quadrature.In addition, the direction direction of bearing of trend (C direction) quadrature of the ridged 2a of portion described later (in fact with) (arrow mark A direction (arrow mark B direction)) of riving is＜11-20〉direction.In addition, the face (splitting surface 7 described later or 8) that penetrates laser is M face ({ 1-100} face).

In addition, as shown in Figure 1, semiconductor layer 2 comprises ridged (ridge) 2a of portion that is formed in the fiber waveguide of extending with striated (elongate) on the C direction.In the first embodiment, only depending on closely at the central portion 100 from the arrow mark A direction (arrow mark B direction) of semiconductor laser chip 20a (n type GaN substrate 1) to opposite side (arrow mark B direction), the zone of W0 (=about 20 μ m) forms the 2a of this ridged portion.That is, the 2a of ridged portion is formed on apart from the position of defective concentrated area 30 about 120 μ m.That is, only be formed with the 2a of ridged portion in the inboard of predetermined distance W1 (=about 80 μ m) in the end of the opposite side (arrow mark B direction side) of distance semiconductor laser chip 20a (n type GaN substrate 1).Be formed with the p lateral electrode 3 that Pt film and Pd film are arranged from the 2a of ridged portion side (downside) lamination successively on the 2a of this ridged portion.In addition, on semiconductor layer 2, be formed with thick SiO by about 300nm in the mode that covers p lateral electrode 3 ₂The current barrier layer (current blocking layer) 4 that film constitutes.Near outside the both ends of the C direction directly over the p of this current barrier layer 4 lateral electrode 3 (splitting surface 7 described later and 8) zone is provided with peristome 4a.

In addition, in inside cord area surrounded, be formed with p face down bonding dish (pad) electrode 5 that Ti film and Au film are arranged from p lateral electrode 3 and current barrier layer 4 sides (downside) lamination successively by the about 30 μ m of end face (4 limit) of the semiconductor laser chip 20a on distance p lateral electrode 3 and the current barrier layer 4 (n type GaN substrate 1).That is, p pad electrode 5 is electrically connected with p lateral electrode 3 by peristome 4a.And p pad electrode 5 is examples of " the second electrode lay " of the present invention.In addition, the length (width) of the arrow mark A direction of p pad electrode 5 (arrow mark B direction) is formed about 140 μ m, and the length of C direction (degree of depth) is formed about 340 μ m.In addition, on the back side of semiconductor laser chip 20a (n type GaN substrate 1), be formed with the n lateral electrode 6 that Ti film, Pt film and Au film are arranged from n type GaN substrate 1 side (upside) lamination successively.Here, n lateral electrode 6 is examples of " first electrode layer " of the present invention.

In addition, in semiconductor laser chip 20a (with reference to Fig. 1), be formed with 2 splitting surfaces 7 and 8 in mode with the 2a of the ridged portion quadrature that constitutes fiber waveguide.And splitting surface 7 and 8 is examples of " first divisional plane of cutting apart " of the present invention.2 splitting surfaces 7 and 8 constitute the resonator faces thus.In addition, in splitting surface 7 and 8, form thick SiO respectively by about 105nm ₂End coating film (not shown) that film constitutes and the alternative stacked thick SiO of about 70nm that is of five storeys ₂Film and the thick TiO of about 43nm ₂The end coating film (not shown) of film.

In addition, in the semiconductor laser chip 20a of an example of first execution mode, in n type GaN substrate 1, semiconductor layer 2 and current barrier layer 4, be formed with and be used to carry out import with stage portion 9a and 9b from have an appointment to the inside of substrate 1 the riving of rive (opening in first minute) of the degree of depth of 40 μ m of upper face side (current barrier layer 4 sides).This is rived to import and is formed on the zone that does not form p pad electrode 5 with stage portion 9a and 9b.And the importing of riving is respectively an example of " second step portion " of the present invention with stage portion 9a and 9b.

In addition, in first execution mode, the riving of semiconductor laser chip 20a imports to be formed on stage portion 9a and 9b and comprises the defective concentrated area 30 more than the crystal defect but do not contain in the zone of the 2a of ridged portion (fiber waveguide).Particularly, as shown in Figure 1, only in the zone of the side (arrow mark A direction side) of the 2a of ridged portion, in the mode of the end of the side (arrow mark A direction) that extends to semiconductor laser chip 20a (n type GaN substrate 1), be formed with respectively to rive along direction (arrow mark A direction (arrow mark B direction)) and import with stage portion 9a and 9b with the 2a of ridged portion (fiber waveguide) quadrature.In addition, riving imports with stage portion 9a and 9b, constitutes so that the width W 3 of arrow mark A direction (arrow mark B direction) has the mode more than 1/20 of width (width of splitting surface 7 or 8 arrow mark A direction (arrow mark B the direction)) W4 (=about 200 μ m) of semiconductor laser chip 20a.

In addition, in the first embodiment, end in the arrow mark A direction and the arrow mark B direction of n type GaN substrate 1 and n lateral electrode 6, rear side (with the opposite side of a side that forms semiconductor layer 2) from semiconductor laser chip 20a (n type GaN substrate 1), along the bearing of trend (C direction) of the 2a of ridged portion (fiber waveguide), be formed with respectively and be used to carry out sheet (chip) shape and cut apart the separation of (second cuts apart) and import with stage portion 10a and 10b.This separation imports the degree of depth that has from n lateral electrode 6 to substrate 1 common about 40 μ m in inside with stage portion 10a and 10b.And, separate importing with stage portion 10a and 10b, be respectively an example of " first step portion " of the present invention.

In addition, in the first embodiment, as shown in Figure 1, import usefulness stage portion 10a and 10b being formed with to separate in the zone of predetermined distance W2 (=about 20 μ m) at interval with the splitting surface 7 that extends along arrow mark A direction (arrow mark B direction) and 8.And, form to separate to import and use stage portion 10a and 10b, make length (=about 400 μ ms) 1/5th or more of the length (=about 360 μ m) of its arrow mark C direction for the C direction of semiconductor laser chip 20a.In addition, separate to import forming by irradiating laser with stage portion 10a and 10b, the bottom in splitting surface 7 and 8 is attached with the material (chip 31) that makes material evaporation the becoming powdery of n type GaN substrate 1 and n lateral electrode 6 by irradiating laser.This chip 31 is the center with the bottom that separate to import with near the splitting surface stage portion 10a and the 10b 7 and 8, and the mode with radius R (=about 80 μ m) of regulation forms.

In addition, as the detailed structure of n type GaN substrate 1 and semiconductor layer 2, n type GaN substrate 1 doping aerobic, and constitute by structure of hexagonal crystal.In addition, semiconductor layer 2 has the surface (top) by C face (face orientation (the 0001)) formation of Ga face.In addition, as shown in Figure 2, semiconductor layer 2 is configured on the n type GaN substrate 1, and is formed with the resilient coating 11 that is made of the n type GaN layer of mixing Si.On this resilient coating 11, be formed with by n type Al _0.05Ga _0.95N type bag (clad) layer 12 that N constitutes.

On n type covering 12, be formed with the n side optical waveguide layer 13 that constitutes by Doped GaN not.On this n side optical waveguide layer 13, be formed with the active layer 14 of (MQW) structure that has multiple quantum trap.This active layer 14 has had alternative stacked 2 barrier layers (not shown) that are made of Doped GaN not and 3 are by the In that do not mix _0.1Ga _0.9The structure of the trap layer (not shown) that N constitutes.

In addition, on active layer 14, be formed with the p side optical waveguide layer 15 that constitutes by Doped GaN not.On this p side optical waveguide layer 15, be formed with by doped with Al not _0.3Ga _0.7Lid (cap) layer 16 that N constitutes.This cap rock 16 has the function of the crystalline quality deterioration that suppresses active layer 14 by the disengaging of the In atom of inhibition active layer 14.

In addition, on cap rock 16, be formed with doped with Mg and by p type Al _0.05Ga _0.95The p type covering 17 that N constitutes.This p type covering 17 has width with about 1.5 μ m that forms by the zone of stipulating from the last facet etch of p type covering 17 and the protuberance that extends to C direction (with reference to Fig. 1).In addition, on the protuberance of p type covering 17, be formed with by unadulterated In _0.05Ga _0.95The p side contact layer 18 that N constitutes.Form as the current injection area territory and constitute the 2a of ridged portion of fiber waveguide by the protuberance of these p type coverings 17 and p side contact layer 18.

Then, another example (semiconductor laser chip 20b) of the structure that forms with reference to the manufacture process of Fig. 3 and Fig. 4 explanation by the GaN based semiconductor laser chip of first execution mode.

At this, in the first embodiment, in manufacture process described later, except that the semiconductor laser chip 20a of an example of first execution mode shown in Figure 1, also form the semiconductor laser chip 20b of another example of first execution mode shown in Figure 3.It is symmetry axis that this semiconductor laser chip 20b has with central portion 100, in the shape of arrow mark A direction (arrow mark B direction) with semiconductor laser chip 20a (with reference to Fig. 1) symmetry.

In addition, in Fig. 4, expression utilizes the scolder 21 that is made of Au-Sn etc. will be fixed on the heat radiation base station that is made of AlN etc. (sub-mount: the sub-mount) structure on 22 based on n lateral electrode 6 sides of the semiconductor laser chip 20b (n type GaN substrate 1) of another example of first execution mode by last connection (junction up) mode.At this moment, because with respect to heat radiation base station 22, the scolder 21 of fusing not only flows into, is bonded in the rear side of the n lateral electrode 6 of semiconductor laser chip 20b, also flow into, be bonded in to separate to import and use stage portion 10a and 10b place and consistent, so semiconductor chip 20b can be melting adhered securely with respect to heat radiation base station 22 with its shape.Have, scolder 21 is examples of " melting adhered layer " of the present invention again.

Have again, in Fig. 4, though having shown will be based on the melting adhered example at heat radiation base station 22 of the semiconductor laser chip 20b of another example of first execution mode by last connected mode, even but for the semiconductor laser chip 20a (with reference to Fig. 1) of an example of first execution mode, also same as described above, can be melting adhered on heat radiation base station 22 by last connected mode.

Then, with reference to Fig. 1～Fig. 6 manufacture process (wafer process) under the wafer state of the semiconductor laser chip 20a of first execution mode and 20b is described.

At first, as shown in Figure 2, use MOVPE (Metal Organic Vapor PhaseEpitaxy: the organic metal vapor phase epitaxial growth) method, under about 1150 ℃ substrate temperature, has on the n type GaN substrate 1 of defective concentrated area 30 resilient coating 11 that the n type GaN layer by the Si that mixed of growing successively constitutes, by n type Al _0.05Ga _0.95N type covering 12 that N constitutes and the n side optical waveguide layer 13 that constitutes of Doped GaN not.

At this, in the first embodiment,, use to be provided with and extend, and press the substrate of the interval of about 400 μ m in arrow mark A direction (arrow mark B direction) with a plurality of defectives concentrated area 30 of striated configuration to the C direction as n type GaN substrate 1.

After this, use the MOVPE method, under about 850 ℃ substrate temperature, on n side optical waveguide layer 13, by making 3 by the In that do not mix _0.1Ga _0.9The trap layer (not shown) that N constitutes and 2 form active layer 14 by barrier layer (not shown) alternating growth that Doped GaN not constitutes.Then, on active layer 14, form the p side optical waveguide layer 15 that constitutes by Doped GaN not successively and by doped with Al not _0.3Ga _0.7The cap rock 16 that N constitutes.

After this, use the MOVPE method, under about 1150 ℃ substrate temperature, on cap rock 16, grow doping Mg by p type Al _0.05Ga _0.95The p type covering 17 that N constitutes.

Then, use the MOVPE method, under about 850 ℃ substrate temperature, on p type covering 17, form by the In that do not mix _0.05Ga _0.95The p type contact layer 18 that N constitutes.

After this, use vacuum vapour deposition and etching technique, form ridged 2a of portion and p lateral electrode 3.Particularly, use vacuum vapour deposition, on p side contact layer 18, form Pt film and Pd film successively from p side contact layer 18 sides (downside).Then, use etching technique, the resist (not shown) that will extend to C direction (with reference to Fig. 1) carries out etching as mask to Pt film and Pd film, simultaneously, above p side contact layer 18 and p type covering 17 etching is carried out in the zone of regulation.Thus, the p lateral electrode 3 that forms the ridged 2a of portion and on the 2a of ridged portion, dispose, the 2a of this ridged portion is made of the protuberance of p side contact layer 18 and p type covering 17, and has the width as about 1.5 μ m of the function of current injection area territory and fiber waveguide.At this moment, as shown in Figure 5 and Figure 6, the 2a of ridged portion is with by the interval of about 200 μ m, with as the direction of riving＜11-20 direction (being arrow mark A direction (arrow mark B direction)) in fact the direction of quadrature (＜1-100〉direction) (C direction) go up the mode of extending and form with striped (stripe) shape (elongate).

In addition, in the first embodiment, between the defective concentrated area 30 and defective concentrated area 30 of the adjacency of extending, form 2 2a of ridged portion to the C direction.In addition, as shown in Figure 6, the 2a of ridged portion forms with the interval W5 (=about 160 μ m) that alternately has regulation and the mode of these 2 different interval of W6 (=about 240 μ m).That is, in the first embodiment, the distance from the central authorities between the 2a of ridged portion (fiber waveguide) to the 2a of ridged portion (fiber waveguide) (about 80 μ m) be than from defective concentrated area 30 to the little length of distance (about 120 μ m) of the 2a of ridged portion (fiber waveguide).

Like this, as shown in Figure 2, form the semiconductor layer 2 that constitutes by resilient coating 11, n type covering 12, n side optical waveguide layer 13, active layer 14, p side optical waveguide layer 15, cap rock 16, p type covering 17 and p side contact layer 18.At this moment, in the first embodiment, the zone of the semiconductor layer 2 that forms on the many defective concentrated areas 30 of the crystal defect of n type GaN substrate 1 also becomes the many defective concentrated areas 30 of crystal defect.

After this, as shown in Figure 1, use plasma CVD method, on semiconductor layer 2, form by about 300nm thick SiO in the mode that covers p lateral electrode 3 ₂The current barrier layer 4 that film constitutes.

Then, use etching technique, photoresist (photo resist) (not shown) as mask, is carried out etching to current barrier layer 4, near the part formation peristome 4a of the current barrier layer 4 beyond the splitting surface in the area just above of p lateral electrode 3 forms the zone.Thus, the upper surface of p lateral electrode 3 is exposed.

After this, use vacuum vapour deposition and peel off method, on the regulation zone of p lateral electrode 3 and current barrier layer 4,, form p pad electrode 5 by from p lateral electrode 3 and current barrier layer 4 sides (downside) lamination Ti film and Au film successively.Particularly, in by the zone (zone of about 30 μ m) outside the line institute area surrounded of about 30 μ m inboards, end face (4 limit) position of the GaN based semiconductor laser chip on the distance current barrier layer 4 (n type GaN substrate 1), form photoresist (not shown) apart from endface position.Then, use vacuum vapour deposition, on p lateral electrode 3 and current barrier layer 4, form Ti film and Au film successively from p lateral electrode 3 and current barrier layer 4 sides (downside).After this, peel off method by use and remove photoresist (not shown), in line institute area surrounded (zone apart from endface position outside the zone of about 30 μ m), form p pad electrode 5 by about 30 μ m inboards, end face (4 limit) position of the GaN based semiconductor laser chip on distance p lateral electrode 3 and the current barrier layer 4 (n type GaN substrate 1).At this moment, as shown in Figure 5, p pad electrode 5 is configured in lower area, that is, the central portion of the arrow mark A direction of p pad electrode 5 (arrow mark B direction) leans on the zone of arrow mark A direction one side or the about 20 μ m of arrow mark B direction one side from the 2a of ridged portion that constitutes fiber waveguide.Have again, each p pad electrode 5, the length (width) of its arrow mark A direction (arrow mark B direction) forms about 140 μ m, and the length of C direction (degree of depth) forms about 340 μ m.

Then, grind the rear side of n type GaN substrate 1, till the thickness of n type GaN substrate 1 becomes for example about 130 μ m.

After this, use vacuum vapour deposition, n type GaN substrate 1 the back side on, by forming n lateral electrode 6 from n type GaN substrate 1 side (upside) lamination Ti film successively, Pt film and Au film.

Like this, finish wafer with rectangular configuration GaN based semiconductor laser chip.

Then, with reference to Fig. 1 and Fig. 5～Figure 10, the later manufacture process (chip process) of wafer process of the first execution mode GaN based semiconductor laser chip is described.

At first, as shown in Figure 5, from semiconductor layer 2 one sides (upside), separate the interval of about 400 μ m along the bearing of trend (C direction) of the 2a of ridged portion of striated, use laser to form to riving of extending with the direction (arrow mark A direction and arrow mark B direction) of the 2a of ridged portion quadrature with groove 9.At this moment, only in 2 different intervals, have and form long the riving of about 100 μ m between the 2a of ridged portion (fiber waveguide) of big interval W6 (=about 240 μ m) (with reference to Fig. 6) with groove 9.That is, in the first embodiment, comprising defective concentrated area 30 but do not comprise in the zone of the 2a of ridged portion (fiber waveguide), riving in each defective concentrated area 30 forms the dotted line shape that extends to arrow mark A direction (arrow mark B direction) with groove 9.

In addition, rive when forming in the mode of the degree of depth, be formed on n type GaN substrate 1, semiconductor layer 2 and the current barrier layer 4 from the upper face side of GaN based semiconductor laser chip with about 40 μ m with groove 9.

Under this state, as shown in Figure 7, make to the bladed instrument 40 of extending along riving with groove 9 from following side with when wafer contacts to arrow mark A direction (arrow mark B direction), apply load so that the upper face side of wafer disconnects, thus in the position with groove 9 of riving along arrow mark A direction (arrow mark B direction) (first cuts apart) wafer of riving.Thus, wafer is formed the strip that semiconductor laser chip 20a and 20b alternately dispose in the mode of 1 row on arrow mark A direction (arrow mark B direction).

Then, as shown in Figure 8,, will use on the instrument 41 at end coating with a plurality of wafer configuration that strip is rived so that splitting surface 7 becomes the mode of upside.Then, on splitting surface 7, form by the thick SiO of about 105nm ₂The end coating film (not shown) that film constitutes.After this, will turn over, be configured in end coating with on the instrument 41 so that splitting surface 8 becomes the mode of upside with a plurality of wafers that strip is rived.Then, on splitting surface 8, replace the thick SiO of the about 70nm of lamination ₂Film and the thick TiO of about 43nm ₂Film forms end coating film (not shown) for each 5 layers.So like this, on splitting surface 7 and 8, form the resonator face.

Then, as shown in Figure 9, from the rear side of the n type GaN substrate 1 of the wafer of riving with strip, interval with about 200 μ m, on the bearing of trend (C direction) of the 2a of ridged portion of striated, under discontiguous state, use laser to form the dark element divisions of about 40 μ m with groove 10.

At this moment, in the first embodiment, separating in the zone of predetermined distance W2 (about 20 μ m) (with reference to Fig. 1), forming element divisions groove 10 with the splitting surface 7 and 8 that extends to arrow mark A direction (arrow mark B direction).At this moment, by irradiating laser, adhere to the have predetermined radius R chip 31 (becoming the material of powdery after the material evaporation of n type GaN substrate 1 and n lateral electrode 6) of (=about 80 μ m) in the bottom of splitting surface 7 and 8.Have again,, on semiconductor layer 2, crack with damaged so can be suppressed at when forming element divisions with groove 10 owing to use laser on n type GaN substrate 1, forming element divisions under the discontiguous state with groove 10.

In addition, in the first embodiment, between the 2a of ridged portion (fiber waveguide) of the interval W5 (with reference to Fig. 6) with about 160 μ m and have centre position separately between the 2a of ridged portion (fiber waveguide) of interval W6 (with reference to Fig. 6) of about 240 μ m, form element divisions with groove 10.That is, in the first embodiment, element divisions is formed at defective concentrated area 30 with groove 10, and has the about 160 μ m centre between the 2a of ridged portion (fiber waveguide) of W5 at interval.

Under this state, as shown in figure 10, the bladed instrument 42 of extending to the C direction is contacted with the wafer of strip from upper face side (semiconductor layer 2 one sides) with groove 10 along element divisions, load so that the following side of the wafer of strip (n lateral electrode 6 one sides) disconnects by applying simultaneously, thus, the wafer of cutting apart (second cuts apart) strip in element divisions with the position of groove 10 along the C direction.Thus, as shown in Figure 1, the strip wafer is divided into the GaN based semiconductor laser chip of length (degree of depth) of the C direction of the length (width) of arrow mark A direction (arrow mark B direction) and about 400 μ m, makes a plurality of GaN based semiconductor laser chips ( semiconductor laser chip 20a and 20b) with about 200 μ m.

In addition, as shown in Figure 4, make utilize above-mentioned manufacture process and n lateral electrode 6 sides of the semiconductor laser chip 20b of chipization down, by scolder 21 with its melting adhered becoming through heating on the heat radiation base station (sub-mount) 22 of the condition of high temperature.At this moment, the scolder 21 of fusing not only flows into, is bonded in the rear side of the n lateral electrode 6 of semiconductor laser chip 20b with respect to heat radiation base station 22, also flow into, be bonded in to separate to import with stage portion 10a and 10b place, and consistent with its shape.Thus, form GaN based semiconductor laser chip by last connected mode.

In the first embodiment, as mentioned above, n lateral electrode 6 sides in a side opposite with a side that is formed with semiconductor layer 2 of n type GaN substrate 1, possessing the separation of extending to the C direction that forms by irradiating laser imports with stage portion 10a and 10b (element divisions groove 10), thus, be formed on the position of separating because will separate to import, crack in the semiconductor layer 2 or damaged so can be suppressed at semiconductor layer 2 on the n type GaN substrate 1 with stage portion 10a and 10b (element divisions with groove 10).Thus, the 2a of ridged portion that can suppress to constitute the fiber waveguide of semiconductor layer 2 damages.

In addition, in the first embodiment, separate in the zone of predetermined distance W2 (=about 20 μ m) at splitting surface 7 and 8 with n type GaN substrate 1, possessing the separation that forms by irradiating laser imports with stage portion 10a and 10b (element divisions groove 10), thus, because the position that can separate with 8 at the splitting surface 7 with the end face that comprises the 2a of ridged portion (fiber waveguide) forms element divisions groove 10, so can be when separating importing by irradiating laser formation, near the end face of inhibition chip 31 (becoming the material of powdery after the material evaporation of n type GaN substrate 1 and n lateral electrode 6) attached to the 2a of ridged portion with stage portion 10a and 10b (element divisions groove 10).Thus, can suppress the decline of the intensity of the laser that the illuminating part under the 2a of ridged portion penetrates.In addition, n lateral electrode 6 sides in a side opposite with a side that is formed with semiconductor layer 2 of n type GaN substrate 1, possessing the separation that forms by irradiating laser imports with stage portion 10a and 10b (element divisions groove 10), thus, because import the position that is formed at the 2a of ridged portion that leaves semiconductor layer 2 more with stage portion 10a and 10b (element divisions groove), so can when forming the separation importing by irradiating laser, suppress near the end face of chip 31 attached to the 2a of ridged portion with stage portion 10a and 10b (element divisions groove 10).Thus, can further suppress the decline of the luminous intensity that the illuminating part under the 2a of ridged portion penetrates.

In addition, in the first embodiment, make distance W 1 (=about 80 μ m) be the length below the distance (about 120 μ m) from defective concentrated area 30 to the 2a of ridged portion, can form the ridged 2a of portion in the position of leaving defective concentrated area 30 thus from the central authorities between the 2a of ridged portion (fiber waveguide) to the 2a of ridged portion.When forming the separation importing by irradiating laser with stage portion 10a and 10b (element divisions groove 10), 30 because the absorption increase of light in the defective concentrated area, become high temperature easily, so, by forming the ridged 2a of portion in the position of leaving defective concentrated area 30, it is too high just can to suppress the 2a of ridged portion temperature.Thus, when forming the separation importing, can suppress the 2a of ridged portion (fiber waveguide) more and damage with stage portion 10a and 10b (element divisions groove 10).

In addition, in the first embodiment, with the separation of arrow mark C direction import length with stage portion 10a and 10b (element separates with groove 10) constitute arrow mark C direction the 2a of ridged portion (fiber waveguide) end distance from more than 1/5th, thus, when arrow mark C direction is carried out element divisions, since in advance the end distance of the 2a of ridged portion from the zone of 1/5th length in be formed with element divisions with groove 10, so can be starting point with groove 10, easily carry out element divisions in arrow mark C direction with element divisions.Thus, can further be suppressed at and crack in the semiconductor layer 2 or damaged.

In addition, in the first embodiment, form to separate and import with stage portion 10a and 10b (element divisions groove 10), make it have the degree of depth that arrives the inside of n type GaN substrate 1 from n lateral electrode 6 one sides, thus, when element divisions is carried out the element divisions operation with groove 10, not only can easily cut apart n lateral electrode 6, can also easily cut apart n type GaN substrate 1.

In addition, in the first embodiment, by to the defective concentrated area 30 that comprises semiconductor layer 2 but do not comprise the area illumination laser of the 2a of ridged portion (fiber waveguide), in the mode of extending to arrow mark A direction (arrow mark B direction), form riving of dotted line shape imports with stage portion 9a and 9b (riving with groove 9) in each defective concentrated area 30, thus, just can not rive with stage portion 9a and 9b (riving) owing to do not form the importing of riving, so just can easily make the divisional plane of the 2a of ridged portion become splitting surface with groove 9 at the 2a of ridged portion.

In addition, in the first embodiment, riving in the arrow mark A direction (arrow mark B direction) imported more than 1/20 of W4 (=about 200 μ m) of width (width of splitting surface 7 or 8 arrow mark A direction (arrow mark B direction)) that constitutes semiconductor laser chip 20a (20b) with the width W 3 of stage portion 9a and 9b (riving) with groove 9, thus, along arrow mark A direction (arrow mark B direction) when riving, owing in the zone of the length 1/20 or more of the width of semiconductor laser chip 20a (20b) (width of splitting surface 7 or 8 arrow mark A direction (arrow mark B direction)) W4, be formed with the usefulness groove 9 of riving in advance, so can be starting point, rive more easily in arrow mark A direction (arrow mark B direction) to rive with groove 9.

In addition, in the first embodiment, formation is rived to import with stage portion 9a and 9b (riving with groove 9) and is made it have the degree of depth that arrives the inside of n type GaN substrate 1 from semiconductor layer 2, thus, just can be along rive the operation of riving with groove 9 time, easily the dividing semiconductor layer 2, can also easily cut apart n type GaN substrate 1.

In addition, in the first embodiment, in importing with the inboard institute area surrounded of stage portion 9a and the only about 30 μ m of 9b (end face of semiconductor laser chip 20a and 20b), form p lateral electrode 3 apart from riving, thus, owing to separate the interval formation p lateral electrode 3 of regulation with groove 9 from riving, so when riving with groove 9 by irradiating laser formation, even under the situation that the conductive material that constitutes p lateral electrode 3 disperses, also can suppress to result from conductive material attached to riving with on the groove 9 and the increase of the leakage current that causes.

In addition, in the first embodiment, constitute scolder 21 that utilization is made of Au-Sn etc. n lateral electrode 6 one sides of n type GaN substrate 1 are installed in structure on the heat radiation base station 22, thus, because scolder 21 not only enters, is bonded on the back side of n lateral electrode 6, also enter, be bonded in separation importing stage portion 10a and 10b, so semiconductor laser chip 20b stably can be bonded on the heat radiation base station 22 from back side depression.Consequently, can suppress to produce the axle offset of laser emitting light.In addition, connected mode also can access effect same as described above with under the melting adhered situation on heat radiation base station 22 of semiconductor laser chip 20a (with reference to Fig. 1) on passing through.

(first of first execution mode changes example)

Change in the GaN based semiconductor laser chip of example at first of this first execution mode, to different with above-mentioned first execution mode, by connecting (junction down) mode down the situation that the semiconductor laser chip 20a of an example of above-mentioned first execution mode is fixed on the base station 22 that dispels the heat is described.

At this, change in the example at first of first execution mode, as shown in figure 11, utilize connected modes down that p pad electrode 5 sides of semiconductor laser chip 20a (n type GaN substrate 1) are fixed on the heat radiation base station 22 that is made of AlN etc. by the scolder 21 that constitutes by Au-Sn etc.In the case, because with respect to heat radiation base station 22, the scolder 21 of fusing not only flows into, is bonded in the surface of the p pad electrode 5 of semiconductor laser chip 20a, also flow into, be bonded in and be formed at riving of splitting surface 7 and 8 semiconductor layer 2 sides and import, so semiconductor laser chip 20a is melting adhered securely on the base station 22 that dispels the heat with stage portion 9a and 9b place and consistent with its shape.

Change in the example at first of first execution mode, as mentioned above, constitute p pad electrode 5 one sides that scolder 21 that utilization is made of Au-Sn etc. will form the semiconductor layer 2 of n type GaN substrate 1 and be fixed on structure on the heat radiation base station 22, thus, because scolder 21 not only enters the surface that is bonded in p pad electrode 5, also enter, bondingly import with stage portion 9a and 9b, so semiconductor laser chip 20a stably can be fixed on the base station 22 that dispels the heat from riving of surface depression.Consequently, can suppress the generation of the axle offset of laser emitting light.In addition, because the scolder 21 of fusing enters, is bonded in to rive to import and locates with stage portion 9a and 9b (with reference to Figure 11), so can not give prominence near the 2a of ridged portion (fiber waveguide) of resonator face (splitting surface 7).Thus, can suppress the laser emitting light that scolder 21 hinders from the 2a of ridged portion.

In addition, other effects of first of first execution mode variation example are identical with above-mentioned first execution mode.In addition, connected mode is melting adhered on the base station 22 that dispelling the heat the time with the semiconductor laser chip 20b (with reference to Fig. 3) of another example of above-mentioned first execution mode under utilizing, and also can access effect same as described above.

(second execution mode)

With reference to Figure 12～Figure 14, in this second execution mode, situation different with above-mentioned first execution mode, form 3 GaN based semiconductor laser chips between the defective concentrated area of adjacency and defective concentrated area describes.

In second execution mode, GaN based semiconductor laser chip, as Figure 12 and shown in Figure 13, have the semiconductor laser chip 40a of the many defective concentrated areas 30 of crystal defect and in n type GaN substrate 41, do not have the semiconductor laser chip 40b of the many defective concentrated areas 30 of crystal defect to constitute by a side (arrow mark D direction side or arrow mark E direction side) at n type GaN substrate 41.Have again, in manufacture process described later, except that the semiconductor laser chip 40a that comprises second execution mode shown in Figure 12, also form semiconductor laser chip 40c shown in Figure 14.This semiconductor laser chip 40c, with identical with respect to the semiconductor laser chip 20b of the semiconductor laser chip 20a that shows in first execution mode, with central portion 110 is symmetry axis, has the shape in arrow mark D direction (arrow mark E direction) symmetry with semiconductor laser chip 40a (with reference to Figure 12).

As Figure 12 and shown in Figure 13, this semiconductor laser chip 40a (40c) and 40b along arrow mark D direction (arrow mark E direction), form in the mode of the length that has about 150 μ m and about 100 μ m respectively.And n type GaN substrate 41 is examples of " substrate " of the present invention.

In addition, in semiconductor laser chip 40a (40c) and 40b, identical with above-mentioned first execution mode, on n type GaN substrate 41, be formed with nitride-based semiconductor layer 42, this nitride-based semiconductor layer 42 comprises formation along the ridged portion 42a of F direction with the fiber waveguide of striated (elongate) extension.And semiconductor layer 42 is examples of " nitride-based semiconductor layer " of the present invention.In addition, on semiconductor layer 42, be formed with thick SiO by about 300nm in the mode that covers P lateral electrode 43 ₂ Current barrier layer 44 and p pad electrode 45 that film constitutes.In addition, on the back side of n type GaN substrate 41, be formed with n lateral electrode 46.And p pad electrode 45 and n lateral electrode 46 are respectively that " the second electrode lay " of the present invention reaches an example of " first electrode layer ".In addition, be formed with 2 splitting surfaces 47 and 48 that constitute the resonator face in mode with the 42a of the ridged portion quadrature that constitutes fiber waveguide.And splitting surface 47 and 48 is examples of " first divisional plane of cutting apart " of the present invention.

In addition, in second execution mode, as shown in figure 12, in semiconductor laser chip 40a, identical with above-mentioned first execution mode, riving to import is formed on a side with stage portion 49a and 49b (riving with groove 49), and simultaneously, the 42a of ridged portion is formed on from the central portion 110 of the arrow mark D direction of semiconductor laser chip 40a (n type GaN substrate 41) (arrow mark E direction) and leans on the zone of opposite side.In addition, in semiconductor laser chip 40b, as shown in figure 13, different with above-mentioned first execution mode, not forming rives imports with stage portion 49a and 49b (usefulness of riving groove 49), but is formed with the 42a of ridged portion at the central portion 120 of the arrow mark D direction (arrow mark E direction) of semiconductor laser chip 40b (n type GaN substrate 41).

And other structures of second execution mode are identical with above-mentioned first execution mode.

Then, with reference to Figure 12～Figure 14, the manufacture process (wafer process) of the wafer state of the GaN based semiconductor laser chip of second execution mode is described.

At first,, use and the identical technology of above-mentioned first execution mode, on n type GaN substrate 41, form p side contact layer (not shown) as Figure 12 and shown in Figure 13.After this, use vacuum vapour deposition and etching technique, form ridged (fiber waveguide) 42a of portion and p lateral electrode 43.

At this moment, in second execution mode, as shown in figure 14, between the defective concentrated area 30 of adjacency and defective concentrated area 30, form 3 42a of ridged portion.

And the manufacture process of the wafer state of other of second execution mode (wafer process) is identical with the manufacture process of the wafer state of above-mentioned first execution mode.

The later manufacture process (chip process) of wafer process of the GaN based semiconductor laser chip of second execution mode then, is described with reference to Figure 12～Figure 14.

At first, use and the identical technology of above-mentioned first execution mode, as shown in figure 14, comprising defective concentrated area 30 but do not comprise in the zone of the 42a of ridged portion (fiber waveguide), riving in each defective concentrated area 30 forms the dotted line shape that extends to arrow mark D direction (arrow mark E direction) with groove 49.Under this state, use and the identical technology of above-mentioned first execution mode, in the position of riving, along arrow mark D direction (arrow mark E direction) (first cuts apart) wafer of riving with groove 49.Thus, wafer is formed GaN based semiconductor laser chip and goes up strip with the configuration of the mode of 1 row in arrow mark D direction (arrow mark E direction).

Then, use and the identical technology of above-mentioned first execution mode,, form element divisions usefulness groove 10 (with reference to Figure 12 and Figure 13) along the bearing of trend (F direction) of the 42a of ridged portion of striated from the rear side of the n type GaN substrate 41 of the wafer of riving with strip.

At this moment, in second execution mode,, identical with above-mentioned first execution mode as Figure 12 and shown in Figure 13, separating in the zone of predetermined distance W2 (about 20 μ m) with the splitting surface 47 and 48 that extends to arrow mark D direction (arrow mark E direction), forming element divisions groove 10.

In addition, in second execution mode, element divisions is formed on defective concentrated area 30 with groove 10 and apart from the part of defective concentrated area 30 about 150 μ m.Under this state, use and the identical technology of above-mentioned first execution mode, by cutting apart (second cuts apart) strip wafer with the position of groove 10 along the F direction, make a plurality of Figure 12 and GaN based semiconductor laser chip shown in Figure 13 (3 semiconductor laser chip 40a (40c) and 40b) in element divisions.

And the later manufacture process of the later manufacture process (chip process) of the wafer process of other of second execution mode and the wafer process of above-mentioned first execution mode is identical.

In addition, the effect of second execution mode is identical with above-mentioned first execution mode.Have again, when being fixed on semiconductor laser chip 40a and 40c (with reference to Figure 12) on the heat radiation base station by melting adhered layer (scolder 21 etc.), identical with above-mentioned first execution mode, which method in connected mode and the following connected mode in the utilization no matter, melting adhered layer can both enter, be bonded in to separate to import with the stage portion 10a (10b) or the importing of riving and locate with stage portion 49a (49b), therefore, semiconductor laser chip 40a stably can be fixed on the heat radiation base station.On the other hand, when being fixed on semiconductor laser chip 40b (with reference to Figure 13) on the heat radiation base station by melting adhered layer, under only utilizing under the situation of connected mode, melting adhered layer enters, is bonded in to separate to import and locates with stage portion 10a (10b), therefore, can access effect same as described above.

(the 3rd execution mode)

With reference to Figure 15 and Figure 16, in the 3rd execution mode, situation different with above-mentioned first and second execution modes, form 1 GaN based semiconductor laser chip between the defective concentrated area of adjacency and defective concentrated area describes.

In the semiconductor laser chip 60a of the 3rd execution mode, as shown in figure 15, have the many defective concentrated areas 30 of crystal defect in the both sides of n type GaN substrate 61 (arrow mark A direction side and arrow mark B direction side).This semiconductor laser chip 60a forms in the mode that has the length (width) of about 400 μ m along arrow mark A direction (arrow mark B direction).And n type GaN substrate 61 is examples of " substrate " of the present invention.

In addition, in semiconductor laser chip 60a, identical with above-mentioned first execution mode, on n type GaN substrate 61, be formed with nitride-based semiconductor layer 62, this nitride-based semiconductor layer 62 comprises formation to the ridged portion 62a of C direction with the fiber waveguide of striated (elongate) extension.And semiconductor layer 62 is examples of " nitride-based semiconductor layer " of the present invention.In addition, on semiconductor layer 62,, be formed with thick SiO by about 300nm to cover the mode of p lateral electrode 63 ₂ Current barrier layer 64 and p pad electrode 65 that film constitutes.In addition, on the back side of n type GaN substrate 61, be formed with n lateral electrode 66.And p pad electrode 65 and n lateral electrode 66 are respectively that " the second electrode lay " of the present invention reaches an example of " first electrode layer ".In addition, be formed with 2 splitting surfaces 67 and 68 that constitute the resonator face in mode with the 62a of the ridged portion quadrature that constitutes fiber waveguide.And splitting surface 67 and 68 is examples of " first divisional plane of cutting apart " of the present invention.

At this, in the 3rd execution mode, as shown in figure 15, in semiconductor laser chip 60a, different with above-mentioned first execution mode, be formed with the importing of riving with stage portion 69a and 69b in a side (arrow mark A direction side), simultaneously, be formed with rive importing stage portion 69c and 69d (arrow mark B direction side) at opposite side.In addition, the 62a of ridged portion is formed on central portion 110 from the arrow mark A direction (arrow mark B direction) of semiconductor laser chip 60a (n type GaN substrate 61) to the some close zones of A direction side.And the importing of riving is respectively an example of " second step portion " of the present invention with stage portion 69a, 69b, 69c and 69d.

And other structures of the GaN based semiconductor laser chip (semiconductor laser chip 60a) of the 3rd execution mode are identical with above-mentioned first execution mode.

In addition, in the 3rd execution mode, as shown in figure 16, utilize by the scolder 21 that constitutes by Au-Sn etc. and go up connected mode n lateral electrode 66 sides of semiconductor laser chip 60a (n type GaN substrate 61) are fixed on the heat radiation base station (sub-mount) 22 that is made of AlN etc.At this moment, with respect to heat radiation base station 22, the scolder 21 of fusing not only flows into, is bonded in the rear side of the n lateral electrode 66 of semiconductor laser chip 60a, also flows into, is bonded in to separate to import with stage portion 10a and 10b place and consistent with its shape.Thus, the semiconductor chip 60a base station 22 that dispels the heat relatively firmly fixes.

Then, with reference to Figure 15～Figure 17, the manufacture process (wafer process) of the wafer state of the GaN based semiconductor laser chip of the 3rd execution mode is described.

At first, as shown in figure 15, use and the identical technology of above-mentioned first execution mode, on n type GaN substrate 61, form p side contact layer (not shown).After this, use vacuum vapour deposition and etching technique, form ridged (fiber waveguide) 62a of portion and p lateral electrode 63.

At this moment, in the 3rd execution mode, as shown in figure 17, between the defective concentrated area 30 of adjacency and defective concentrated area 30, form 1 62a of ridged portion.

Wherein, the manufacture process of the wafer state of other of the 3rd execution mode (wafer process) is identical with the manufacture process of the wafer state of above-mentioned first execution mode.

The later manufacture process (chip process) of wafer process of the GaN based semiconductor laser chip of the 3rd execution mode then, is described with reference to Figure 15～Figure 17.

At first, use and the identical technology of above-mentioned first execution mode, as shown in figure 17, comprising defective concentrated area 30 but do not comprise in the zone of the 62a of ridged portion (fiber waveguide), will rive in each defective concentrated area 30 forms the dotted line shape that extends to arrow mark A direction (arrow mark B direction) with groove 69.Under this state, use and the identical technology of above-mentioned first execution mode, in the position of riving, along arrow mark A direction (arrow mark B direction) (first cuts apart) wafer of riving with groove 69.Thus, wafer is formed semiconductor laser chip and goes up the strip that disposes in 1 mode that is listed as in arrow mark A direction (arrow mark B direction).

Then, use and the identical technology of above-mentioned first execution mode,, form element divisions usefulness groove 10 (with reference to Figure 15) at the bearing of trend (C direction) of the 62a of ridged portion of striated from the rear side of the wafer n type GaN substrate 61 of riving with strip.

At this moment, in the 3rd execution mode, as shown in figure 15, identical with above-mentioned first execution mode, separating the zone of predetermined distance W2 (about 20 μ m) to the C direction from the splitting surface 67 and 68 that extends to arrow mark A direction (arrow mark B direction), forming element divisions groove 10.

In addition, in the 3rd execution mode, the part (with reference to Figure 15) in defective concentrated area 30 forms element divisions groove 10.Under this state, use and the identical technology of above-mentioned first execution mode, by along the C direction strip wafer being cut apart (second cuts apart) with the position of groove 10, make a plurality of GaN based semiconductor laser chips (semiconductor laser chip 60a) shown in Figure 15 in element divisions.

And the later manufacture process of the later manufacture process (chip process) of the wafer process of other of the 3rd execution mode and the wafer process of above-mentioned first execution mode is identical.

Then, in the 3rd execution mode, as shown in figure 16, make said chipization semiconductor laser chip 60a n lateral electrode 66 sides down, by scolder 21 with its melting adhered becoming through heating on the heat radiation base station (sub-mount) 22 of the condition of high temperature.At this moment, the scolder 21 of fusing not only flows into, is bonded in the rear side of the n lateral electrode 66 of semiconductor laser chip 60a with respect to heat radiation base station 22, also flow into, be bonded in to separate to import with stage portion 10a and 10b place, and consistent with its shape.Thus, identical with above-mentioned first execution mode, form GaN based semiconductor laser chip by last connected mode.

In the 3rd execution mode, as mentioned above, by bearing of trend along the 62a of ridged portion of semiconductor laser chip 60a, form to separate in the position corresponding and import, the 62a of ridged portion (fiber waveguide) that is configured in the central portion side of laser diode can be formed in the zone of leaving defective concentrated area, both sides 30 with stage portion 10a and 10b with the defective concentrated area 30 of the two sides of the arrow mark A direction (arrow mark B direction) of laser diode.Thus, can suppress the increase of the crystal defect of the 62a of ridged portion.

In addition, in the 3rd execution mode, identical with above-mentioned first execution mode, n lateral electrode 66 sides for a side opposite with a side that is formed with semiconductor layer 62 of n type GaN substrate 61, constitute in the mode of utilizing the scolder 21 that constitutes by Au-Sn etc. to be installed on the heat radiation base station 22, thus, because scolder 21 not only enters, is bonded on the back side of n lateral electrode 66, also enter, be bonded in separation importing stage portion 10a and 10b, so semiconductor laser chip 60a stably can be fixed on the heat radiation base station 22 from back side depression.Consequently, can suppress to produce the axle offset of laser emitting light.And the effect of other of the 3rd execution mode is identical with above-mentioned first execution mode.

(the variation example of the 3rd execution mode)

In the GaN based semiconductor laser chip of the variation example of the 3rd execution mode, to different with above-mentioned the 3rd execution mode, by connected mode down the situation that semiconductor laser chip 60a is fixed on the heat radiation base station 22 is described.

At this, in the variation example of the 3rd execution mode, as shown in figure 18, utilize connected modes down that p pad electrode 65 sides of semiconductor laser chip 60a (n type GaN substrate 61) are fixed on the heat radiation base station (sub-mount) 22 that is made of AlN etc. by the scolder 21 that constitutes by Au-Sn etc.In the case, because with respect to heat radiation base station 22, the scolder 21 of fusing not only flows into, is bonded in the surface of the p pad electrode 65 of semiconductor laser chip 60a, semiconductor laser chip 60a also flows into, be bonded in splitting surface 67 and 68 semiconductor layer 62 sides form 4 rive and import, so can firmly fix with respect to the base station 22 that dispels the heat with stage portion 69a, 69b, 69c and 69d place and consistent with its shape.

In the variation example of the 3rd execution mode, as mentioned above, the mode that is fixed on the heat radiation base station 22 with p pad electrode 65 sides of utilizing the scolder 21 that is made of Au-Sn etc. will be formed with the semiconductor layer 62 of n type GaN substrate 61 constitutes, thus, because scolder 21 not only enters, is bonded in the surface of p pad electrode 65, also enter, be bonded in rive importing stage portion 69a, 69b, 69c and 69d (4 positions), so semiconductor laser chip 60a stably can be fixed on the heat radiation base station 22 from the surface depression.Consequently, can suppress the generation of the axle offset of laser emitting light.In addition,, the scolder 21 of fusing locates, so not outstanding near the 62a of ridged portion (fiber waveguide) of resonator face (splitting surface 67) with stage portion 69a and 69c (with reference to Figure 18) because entering, be bonded in the importing of riving.Thus, can suppress the laser emitting light that scolder 21 hinders from the 62a of ridged portion.And other effects of the variation example of the 3rd execution mode are identical with above-mentioned first execution mode.

And this disclosed execution mode and embodiment should think it all is examples in all respects, are not the contents of restriction.Scope of the present invention is not to be represented by above-mentioned execution mode and embodiment, but is represented by the scope of claim, and the scope with claim of further being included in is the same meaning and the used change in the scope.

For example, in the above-described embodiment, be suitable for example of the present invention in the GaN based semiconductor laser chip, the invention is not restricted to this, also can be applicable to GaN class nitride-based semiconductor device in addition though be illustrated in.

In addition, in the above-described embodiment, form the example of element divisions, the invention is not restricted to this, also can form the element divisions groove in the zone that separates the distance more than about 20 μ m with splitting surface with groove though be illustrated in apart from the zone of the about 20 μ m of splitting surface.For example, under separating than the bigger zone formation element divisions usefulness situation of groove of the distance of about 20 μ m with splitting surface, owing to can when forming element divisions, further suppress chip attached to ridged portion (fiber waveguide), so can make wafer (n type GaN substrate) thinner with groove.

In addition, in the above-described embodiment, though show the example that uses the many zones of crystal defect to be formed the n type GaN substrate of linearity, the invention is not restricted to this, also can use the many zones of crystal defect to be formed linearity for example latticed n type GaN substrate in addition.

In addition, in the above-described embodiment, use bladed instrument to rive or cut apart the example of wafer, the invention is not restricted to this, also can use for example roller (roller) beyond the bladed instrument to wait to rive or cut apart wafer though show.

In addition, in the above-described embodiment, use SiO though show ₂And TiO ₂As the end coating examples of material, but the invention is not restricted to this,, remove SiO as the end coating material ₂And TiO ₂For example both can use Al outward, ₂O ₃, ZrO ₂, Ta ₂O ₅, Nb ₂O ₅, La ₂O ₃, SiN, AlN or BN etc., also can use Ti as the different material of ratio of components ₃O ₅Or Nb ₂O ₃Deng.

In addition, in the above-described embodiment,, the invention is not restricted to this, also the thickness of wafer (n type GaN substrate) can be formed about 130 μ m thickness in addition though show the example that the thickness of wafer (n type GaN substrate) is formed about 130 μ m.

In addition, in the above-described embodiment, though almost form the p pad electrode in the area inside of impartial distance in end face (4 limit) position of distance semiconductor laser chip, the invention is not restricted to this, also can not be impartial distance, can be other shapes.For example, can make the p pad electrode for second of first execution mode of the present invention of expression changing example～4th and change the such shape of example respectively among circular, polygonal or Figure 19～Figure 21.In the case, changing example～4th second changes in the example, because can reduce the area of p pad electrode 5a～5c, so can reduce the capacity of semiconductor laser chip.Thus, can improve the response characteristic (high frequency characteristics) of semiconductor laser chip.In addition, changing example～4th second changes in the example (especially second changes example), because only see semiconductor laser chip (p pad electrode 5a～5c), just can easily discern the direction of semiconductor laser chip, so can easily discern the exit direction of laser from the top.

In addition, in the above-described embodiment, though show the example that between the defective concentrated area of adjacency and defective concentrated area, forms 1 or 2 or 3 GaN based semiconductor laser chip, but the invention is not restricted to this, also can between the defective concentrated area of adjacency and defective concentrated area, form the GaN based semiconductor laser chip more than 4.

In addition, in second execution mode, though show 3 GaN based semiconductor laser chips that between the defective concentrated area of adjacency and defective concentrated area, form the width that has about 150 μ m, about 100 μ m and about 150 μ m respectively, but the invention is not restricted to this, also can between the defective concentrated area of adjacency and defective concentrated area, form 3 GaN based semiconductor laser chips of same widths.

In addition, in second execution mode, though show and between the defective concentrated area of adjacency and defective concentrated area, form 3 GaN based semiconductor laser chips, make the ridged portion (fiber waveguide) of laser chip of the central authorities of formation be positioned at the example of the central portion of laser chip, but the invention is not restricted to this, also can form the ridged portion (fiber waveguide) of the laser chip of central authorities in position near a side.

In addition, in the above-described embodiment, all be about the example of 40 μ m though show the element divisions that forms in the rear side of substrate with the degree of depth of groove with groove with the riving of semiconductor layer side formation of substrate, but the invention is not restricted to this, also can more than 3 μ m, form element divisions in the scope below the 100 μ m and use the degree of depth of groove with riving with groove.

In addition, in the above-described embodiment, though show heat radiation base station that use is made of AlN as the example that is used for fixing the sub-mount of semiconductor laser chip, but the invention is not restricted to this, also can use the heat radiation base station that constitutes by other material such as SiC, Si, BN, diamond, Cu, CuW and Al.In addition,, the invention is not restricted to this, also can use the melting adhered layer that constitutes by other material such as Ag-Sn, Pb-Sn and In-Sn though use the scolder that constitutes by the Au-Sn melting adhered layer when laser chip being fixed on the heat radiation base station.

Claims (20)

1. the manufacture method of a nitride-based semiconductor device is characterized in that, comprising:

On substrate, form the operation of nitride-based semiconductor layer with the fiber waveguide of extending to first direction;

Carry out first operation of cutting apart along the second direction that the described first direction with described fiber waveguide extension intersects;

Surface in a side opposite with a side of the described nitride-based semiconductor layer of being formed with of described substrate, and with extend to described second direction based on described first divisional plane of the cutting apart zone of predetermined distance at interval, form the element divisions of extending operation with groove to described first direction by irradiating laser; With

Cut apart the operation that forms nitride-based semiconductor device by carrying out second with groove along described element divisions.

2. the manufacture method of nitride-based semiconductor device as claimed in claim 1 is characterized in that:

Described substrate has a plurality of defectives concentrated area to described first direction extends and in accordance with regulations interval is provided with on described second direction.

3. the manufacture method of nitride-based semiconductor device as claimed in claim 2 is characterized in that:

On described substrate, form the operation of nitride-based semiconductor layer, be included in the operation that between the described defective concentrated area of the adjacency that described first direction extends, forms 2 described fiber waveguides at least with the fiber waveguide of extending to first direction,

Form the operation of element divisions with groove on described substrate, the central authorities that are included between described defective concentrated area and the described fiber waveguide form the operation of described element divisions with groove.

4. the manufacture method of nitride-based semiconductor device as claimed in claim 3 is characterized in that:

Distance from the central authorities between the described fiber waveguide of adjacency to described fiber waveguide is to the length below the distance of described fiber waveguide from described defective concentrated area.

5. the manufacture method of nitride-based semiconductor device as claimed in claim 2 is characterized in that:

On described substrate, form the operation of nitride-based semiconductor layer, be included in the operation that between the described defective concentrated area of the adjacency that described first direction extends, forms 1 described fiber waveguide at least with the fiber waveguide of extending to first direction,

On described substrate, form the operation of element divisions, comprise in the corresponding mode in the described defective concentrated area that is provided with both sides forming the operation of described element divisions with groove in described fiber waveguide with groove.

6. the manufacture method of nitride-based semiconductor device as claimed in claim 1 is characterized in that:

On described substrate, form the operation of described element divisions, also comprise forming described element divisions groove with groove, make described element divisions with groove have the end distance of the described fiber waveguide of described first direction from the operation of the length more than 1/5th.

7. the manufacture method of nitride-based semiconductor device as claimed in claim 1 is characterized in that:

Also be included in the operation that forms first electrode layer on the surface of a side opposite with a side of the described nitride-based semiconductor layer of being formed with of described substrate,

Form described element divisions and form the operation of described element divisions with groove with the degree of depth that the operation of groove is included in from described first electrode layer side to described substrate inside.

8. the manufacture method of nitride-based semiconductor device as claimed in claim 2 is characterized in that:

Carry out described first operation of cutting apart, comprising:

At least comprising described defective concentrated area but not comprising the zone of described fiber waveguide at described semiconducting nitride thing based semiconductor layer, by irradiating laser, form the riving of dotted line shape that is arranged on each described defective concentrated area in the mode of extending and use the operation of groove to described second direction; With

By along described rive to rive with groove form the operation of resonator face.

9. the manufacture method of nitride-based semiconductor device as claimed in claim 8 is characterized in that:

Form the described of dotted line shape in the mode of extending and rive, comprise forming described riving with groove so that described riving has the length more than 1/20 at the width of the described nitride-based semiconductor device of described second direction with groove with the operation of groove to described second direction.

10. the manufacture method of nitride-based semiconductor device as claimed in claim 8 is characterized in that:

Form described riving with the operation of groove, the degree of depth that is included in from described nitride-based semiconductor layer side to described substrate inside forms described riving with the operation of groove.

11. the manufacture method of nitride-based semiconductor device as claimed in claim 8 is characterized in that:

Also be included in the operation that forms described the second electrode lay on the described nitride-based semiconductor layer,

Form the described defective concentrated area that described operation of riving with groove is included in the zone that does not form described the second electrode lay and form described riving with the operation of groove.

12. the manufacture method of nitride-based semiconductor device as claimed in claim 1 is characterized in that, also comprises:

Carry out described first segmentation process and by carry out described second cut apart the operation that forms nitride-based semiconductor device after, by melting adhered layer any side of described nitride-based semiconductor layer side or described substrate-side is installed in operation on the heat radiation base station.

13. a nitride-based semiconductor device is characterized in that, comprising:

The substrate that constitutes by nitride-based semiconductor;

The nitride-based semiconductor layer that on described substrate, forms, constitute by the nitride-based semiconductor that is formed with the fiber waveguide of extending to first direction; With

Near at least the end face of described fiber waveguide zone, at the described first direction that extends along described fiber waveguide, the first step portion that forms on the surface of a side opposite with a side of the described nitride-based semiconductor layer of being formed with of described substrate.

14. nitride-based semiconductor device as claimed in claim 13 is characterized in that:

In the length of the described first step portion of described first direction be described first direction described fiber waveguide end distance from more than 1/5th.

15. nitride-based semiconductor device as claimed in claim 13 is characterized in that, also comprises:

With the surface of the opposite side of described nitride-based semiconductor layer one side of being formed with of described substrate on first electrode layer that forms, wherein

Described first step portion forms to have the mode that arrives the degree of depth of described substrate inside from described first electrode layer side.

16. nitride-based semiconductor device as claimed in claim 13 is characterized in that:

Described substrate, have extend to the described first direction that described fiber waveguide is extended and on the second direction of intersecting with described first direction with a plurality of defectives concentrated area of the interval setting of regulation,

At least in comprising of described nitride-based semiconductor layer of described defective concentrated area but do not comprise near the zone of the end face the described fiber waveguide, separate the distance of regulation with described fiber waveguide, be formed with second step portion in each described defective concentrated area in the mode of extending to described second direction.

17. nitride-based semiconductor device as claimed in claim 16 is characterized in that, also comprises:

The second electrode lay that on described nitride-based semiconductor layer, forms, wherein

Described the second electrode lay and described second step portion separate the interval of regulation and form.

18. nitride-based semiconductor device as claimed in claim 16 is characterized in that:

Length in the described second step portion of described second direction is more than 1/20th of width of the described nitride-based semiconductor device of described second direction.

19. nitride-based semiconductor device as claimed in claim 18 is characterized in that:

Described second step portion forms to have the mode that arrives the degree of depth of described substrate inside from described nitride-based semiconductor layer side.

20. nitride-based semiconductor device as claimed in claim 13 is characterized in that:

Any side of described nitride-based semiconductor layer side or described substrate-side is installed on the heat radiation base station by melting adhered layer.

Images