The application divides an application, and the application number of its original bill application is 200510000196.5, and the applying date is on January 6th, 2005, and denomination of invention is " display substrate, display, color filter substrate, LCD and a manufacture method ".
The present invention requires Korean application 2004-00701 number submitted on January 6th, 2004 and the right of priority of the Korean application submitted on February 27th, 2004 2004-13337 number.
Embodiment
In order to make those skilled in the art can implement the present invention, describe embodiments of the invention in detail referring now to accompanying drawing, multi-form but the present invention can show as, the embodiment that it is not limited in this explanation.
In the drawings in order clearly to show each layer and zone, enlarging its thickness represents, in full piece of writing instructions, similar portions is enclosed the symbol of phase diagram, when mention part such as layer, film, zone, substrate other part " on " time, it is meant that " directly " is positioned on other part, also comprise the situation that accompanies other part therebetween, otherwise say when certain part " directly " is positioned on other part, refer to there is no other part therebetween.Represent identical parts with identical drawing reference numeral in the instructions full text.
Figure 1A is that regional transmission is divided into two-part display lower substrate arrangenent diagram respectively according to the present invention, and Figure 1B is that regional transmission is divided into tetrameric display lower substrate arrangenent diagram respectively according to the present invention.
Figure 1A, Figure 1B be illustrated in the display gate line 203 that forms on-off element 215 and be electrically connected with on-off element ', data line 211 ', the layout of the lower substrate of pixel region Px.Described on-off element 215 is made up of grid 202, first and second electrode 211,213, and described pixel region Px is made up of reflector space Ra and regional transmission Ta.Figure 1A, Figure 1B illustrate regional transmission Ta are evenly divided into two part Ta ', four parts respectively, but can inhomogeneously cut apart.Form embossing pattern at reflector space Ra.
Signal is selected in the output of driving circuit (not shown), and it is by gate line 203 ' transmission grid 203, and output data voltage, by data line 211 ' reaching on-off element 215 transmits pixel electrodes.
In addition, have the top substrate that forms color filter, common electrode etc., and the liquid crystal layer between lower substrate and top substrate on lower substrate top, to make display.At this moment, the common electrode of described top substrate comprises pattern.The liquid crystal molecule of liquid crystal layer is VA or RTN (oppositely TN) orientation.
Figure 1B is that regional transmission is divided into tetrameric display lower substrate arrangenent diagram respectively according to the present invention, and Fig. 2 A is the surface chart of Figure 1A along I-I ' line.
With reference to Fig. 2 A, the pixel electrode first pixel electrode portion 219 next doors, 223 bottoms form.
Form the on-off element 215 and the first pixel electrode portion 219 on first pole piece 201, next door 223, the insulation course 221 with regional transmission and the second pixel electrode portion 225 are formed at its top.The first pixel electrode portion 219 places in the regional transmission Ta, and the second pixel electrode portion 225 places in the reflector space Ra.
Particularly, comprise first plate 201, be formed at the on-off element 215 on first plate 201, be formed at first plate 201 and the first pixel electrode portion 219 of zone formation outside the zone that forms on-off element 215, at first plate 201 and on-off element 215, in the first pixel electrode portion 219 and expose first electrode, 213 parts of on-off element 215, and expose the first pixel electrode portion, 219 parts but in the first pixel electrode portion 219, form the insulation course 221 in next door 223, the second pixel electrode portion 225 that on insulation course 221, is electrically connected with on-off element 215 first electrodes 213 and the first pixel electrode portion 219.
Regional transmission is circle, polygon, ellipse.Polygon comprises quadrangle or sexangle, anistree shape.
The first pixel electrode portion 219 and the second pixel electrode portion, 225 simple layers or lamination layer structure.According to circumstances, between on-off element on the on-off element 215 and insulation course 221, fill passivation layer 217.In addition, the first pixel electrode portion 219 may be a transparency electrode, and it is made up of ITO, IZO.The second pixel electrode portion 225 is opaque electrodes, and it is made up of aluminium, aluminium alloy or aluminium and metal composite layer.And, between two electrodes, fill alloy-layers such as molybdenum tungsten in the zone that the first pixel electrode portion 219 and the second pixel electrode portion 225 are electrically connected.
Next door 223 is same substance with insulation course 221.
With reference to Fig. 2 B, form the first pixel electrode portion 219 of pixel electrode on the next door 223.
Particularly, Fig. 2 B structure is except form the first pixel electrode portion 219 on insulation course 221, and is forming in the first pixel electrode portion 219 of reflector space outside the second line pixel electrode 225, identical with Fig. 2 A structure.Just, because on insulation course 221, form the first pixel electrode portion 219, so form the first pixel electrode portion 219 on 223 tops, regional transmission next door.
It is poor by next door 223 and reflector space and regional transmission boundary layer under the state that does not apply landform (topographically) voltage to have display with Fig. 2 A and Fig. 2 B same structure, liquid crystal has degree of tilt and orientation, to obtain good image quality, according to circumstances can omit friction process, therefore can improve bad that friction process causes, reduce production costs.
Fig. 3 A to 3D illustrates Fig. 2 A formation method according to operation.
With reference to Fig. 3 A, on first plate 202, form after the on-off element 215, the zone outside the zone that forms and forming on-off element 215 on first plate 201 forms the first pixel electrode portion 219.Then, in first plate 201, on-off element 215 and the first pixel electrode portion 219, form insulation course 221.
First plate 201 is that glass or crystal etc. have radioparent insulator plate.On-off element 215 is thin film transistor (TFT)s, and it is made up of first and second electrode 211,213 of grid 203, gate insulator 205, channel layer 207, source/drain on first plate 201.Grid 203 or first and second electrode 211,213 are made up of the composite bed of aluminum or aluminum alloy or aluminium and metal, form with methods such as sputters usually.Gate insulator 205 is insulation courses such as silicon nitride or oxide layer, and channel layer 207 is made up of semiconductor layers such as silicon layers, can use chemical vapor deposition method (CVD) to form respectively.
Particularly, on first plate 201, form grid 203 and gate line 203 ' afterwards, on the grid 203 and first plate, form gate insulator 205.Then, form on gate insulator 205 after semiconductor layer and the resistance articulamentum, the patterning case forms semiconductor pattern and resistance connection pattern with zone and neighboring area thereof at formation grid 203.Resistance connect form metal level on the pattern after, in the zone that forms grid 203 and the neighboring area form, and the patterning case makes it poor at grid 203 top cambium layer, with form first and second electrode 211,213 and data line 211 '.
First and second electrode 211,213 of patterning case is connected pattern as mask etching resistance, make cambium layer poor, form channel layer 207, to form on-off element 215.(all right in addition, form successively after semiconductor layer and resistance articulamentum, the metal level, carry out the patterning case simultaneously and form first and second electrode 211,213, the layer that forms resistance connection pattern is poor, to form on-off element 215.) according to circumstances, on on-off element 215, form passivation layer 217.Passivation layer 217 is insulation courses such as silicon nitride.
Insulation course 221 forms on passivation layer 217.For example, be to form low and thick, the smooth insulation course of permittivity with organic insulator.
With reference to Fig. 3 B, prepare the grating 300 of the exposure device of formation pattern at described Fig. 3 A insulation course 221, pass through optical etching, second portion 213 parts of exposing on-off element 215, and expose the first pixel electrode portion, 219 parts, form insulation course 221, the next door is placed in the first pixel electrode portion 219.
In the present embodiment, organic insulator comprises photoresist.Form the method for removing specific region insulation course 221 by the optical etching operation that comprises exposure process and video picture operation.At this moment, organic layer 221 can form by the optical etching operation.
The photoresist chemical constitution of irradiates light is brought and the not different variations of photoresist chemical constitution of irradiates light, so can optionally remove by exposure process.Grating 300 forms non-transparent parts 302 on transparent component 301, for example form chromium etc. according to the pattern form, to finish making.
There is shown, form the zone that has the zone of non-transparent parts 302 and do not have non-transparent parts at grating 300, remove insulation course 221 parts by zone with non-transparent parts, but according to the photoresist feature, can exchange zone with non-transparent parts 302 and do not have zone of opacity the zone.
Pattern in grating 300 further formation will formation next door 223 that is used in exposure process forms next door 223 in the time of with the regional transmission that form to lag behind.The pattern that forms next door 223 is single pattern or slit pattern.When utilizing single pattern or slit pattern to form the next door, next door 223 height are identical with reflector space or less than reflector space.Particularly, when the grating 300 of slit pattern is appended in use, form the inclined partitions 223 lower than reflector space by light inflection phenomenon.
And, the pattern of formation embossing pattern on the insulation course 221 that forms reflector space.Pattern also forms by the optical etching operation.Form embossing pattern by heat treatment process after the video picture.
With reference to Fig. 3 C, the reflector space on insulation course 221 forms the second pixel electrode portion 225 of opaque electrode, and is electrically connected with the first pixel electrode portion 219 and second electrode 213.
As mentioned above, remove regional transmission insulation course 221 part or all, it is poor to form reflector space and regional transmission thickness of liquid crystal layer, to make the demonstration according to the transmissison characteristic of the reflection characteristic of reflector space and regional transmission.For example, when if the regional transmission thickness of liquid crystal layer is approximately 2 times of reflector space thickness of liquid crystal layer, can make the liquid crystal layer distance of carrying out identical, so that reflector space is similar with the regional transmission optical characteristics with the liquid crystal layer that carries out at regional transmission light distance at reflector space light.According to circumstances, adjust the reflector space thickness of liquid crystal layer, adjust the regional transmission thickness of liquid crystal layer, make reflector space have top condition according to reflector space thickness of liquid crystal layer of adjusting and insulation course 221 thickness.
And the display formation method (not shown) with Fig. 2 B structure forms the first pixel electrode portion 219 after forming insulation course 221, as Fig. 3 A to Fig. 3 C formation method.Just, form the first pixel electrode portion 219 and the second pixel electrode portion 225 after forming insulation course 221, remove the second pixel electrode portion 225 of opaque electrode then from regional transmission, with second pixel electrode portion 225 of qualification reflector space and the first pixel electrode portion 219 of regional transmission.And, between the first pixel electrode portion and the second pixel electrode portion, fill metal levels such as molybdenum tungsten.
Fig. 4 A, 4B, 4C illustrate the common electrode pattern that forms at the top substrate common electrode according to the present invention.
The common electrode pattern of top substrate forms more than one with any form in circle, ellipse or the polygon.And, when cutting apart regional transmission 117a, 117b, form pattern 402 at the top substrate common electrode of corresponding each cut zone by next door etc.Common electrode has multiple pattern.Pattern 402 is positioned at corresponding respectively regional transmission or the top substrate common electrode regional center of the regional transmission cut apart.Pattern has removes part or all structure of common electrode.
Have all Figure 1A, Figure 1B form at lower substrate and reflector space, on-off element etc.In addition, filling liquid crystal layer between lower substrate and top substrate, the liquid crystal mode of liquid crystal layer are VA (vertical orientated) or RTN (Reverse TN).
Usually, the half transmitting display has light source, shines from light guide plate and various thin slice (film), Polarizer and the polarizer of the light of light source ejaculation to panel comprehensively in lower substrate.Polarizer makes the circular polarisation of light source of linear polarisation with a direction of principal axis of λ/4 phase change light waves.And, have polarizer (λ/4 phase-plates), Polarizer on top substrate top.Form black mode by polarizer at reflector space, consistent at reflector space with black and white pattern in the regional transmission.And, substitute the common electrode pattern and form the insulation course projection in pattern position.
Fig. 5 A is the sectional view of Fig. 4 A along III-III ' line.
With reference to Fig. 5 A, lower substrate 501 display structure identical except no next door with Fig. 2 A.That is, form regional transmission but do not stay the next door and the structure of removing.In addition, the first pixel electrode portion 219 places on the insulation course 221.The top substrate 505 of corresponding lower substrate 501 forms color filter isotactic fixed structure at the substrate identical with lower substrate.Form common electrode 507 in top substrate 505 comprehensively.Common electrode 507 has pattern 402 in the position of corresponding lower substrate 501 regional transmissions, and has the oval configuration of longitudinal extension.At this moment, pattern 402 has quadrangle or circle.Perhaps substitute common electrode 507 patterns 402, form the insulation course projection in pattern position.
Display with Fig. 5 A structure moves (rotation) liquid crystal to certain orientation under the state that applies voltage by pattern, improve liquid crystal orientation, therefore forms numerous zones more well, shows image quality to improve.
Fig. 5 B is the sectional view of Fig. 4 B along IV-IV ' line, and Fig. 5 C is the sectional view of Fig. 4 C along V-V ' line.
Fig. 5 B and Fig. 5 C have the lower substrate 502,503 with Fig. 2 A and Fig. 2 B same structure.Among Fig. 5 B, the 5C, the top substrate 505 of corresponding lower substrate 502,503 and common electrode 507 have the structure identical with Fig. 5 A.
With reference to Fig. 5 B, 5C, common electrode 507 has pattern in the position of corresponding lower substrate 502,503 regional transmissions.Specifically, common electrode 507 patterns 402 are formed at top substrate common electrode 507 zones of zone outside the zone that forms the next door or the corresponding regional transmission of cutting apart.In not forming the regional transmission in next door, be formed centrally common electrode 507 patterns 402, pattern 402 forms more than one at regional transmission, forms respectively more than one in zone that correspondence is cut apart by the next door or the top substrate common electrode 507 that does not form the zone in next door.Or alternative common electrode 507 patterns form the insulation projection in pattern 402 positions.
Display, reflector space embossing pattern poor under the state that does not apply landform voltage with Fig. 5 B and Fig. 5 C-structure according to next door and reflector space boundary layer, liquid crystal can have the degree of tilt orientation, and, under the state that does not apply voltage, liquid crystal is moved (rotation) to certain orientation by pattern.And, concern that from the position of next door and pattern property complimentary to one another ground control is according to the orientation characteristic that does not apply voltage and the liquid crystal that applies voltage and according to the directivity that moves (rotation), not only can improve the demonstration image quality, also according to circumstances can omit friction process, improvement by friction process cause bad, reduce production costs.
Fig. 6 is the LCD planimetric map according to the embodiment of the invention, and Fig. 7 is the sectional view of Fig. 6 along VI-VI ' line, and Fig. 8 is the sectional view of Fig. 6 along VII-VII ' line.
With reference to Fig. 6 to Fig. 8, LCD comprises top substrate 1170, lower substrate 1180 and liquid crystal layer 1108.
Top substrate 1170 comprise second polate 1100, black battle array 1102, color filter 1102, color filter 1104a, 1104b, 1104c, common electrode 1106, liner 1110 (dividing plate, Spacer) and numerous zone with grooves (Recess for Multi-Domain) 1130.Top substrate 1170 comprises the viewing area 1150 of display image and surrounds the neighboring area 1155 of viewing area 1150.
Lower substrate 1180 comprises first plate 1120, thin film transistor (TFT) 1119, source electrode line 1118a ', gate line 1118b ', gate insulator 1126, passivation layer 1116, holding capacitor (not shown), organic layer 1114, the first pixel electrode portion 1112, the second pixel electrode portion 1113 and numerous zone projection (Protrusion for Multi-Domain) 1131a.Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180.
Lower substrate 1180 comprises the pixel region 1140 of display image and the lightproof area 1145 of shading light.Pixel region 1140 is corresponding to viewing area 1150, and lightproof area 1145 is corresponding to neighboring area 1155.Pixel region 1140 comprises that transmission is from the optical transmission window 1129a of backlight assembly generation and the reflector space 1128 of reflection exterior light.Preferably, transmission window 1129a is straight square shape.
The second polate 1100 and first plate 1120 use the clear glass of transmissive light.Glass is not for there being alkalescence.When glass is alkalescence, if alkali ion outputs to the liquid crystal cells from glass, reduce liquid crystal resistivity, change display characteristic, reduce the adhesion of unit and glass, influence the on-off element operation.
At this moment, the second polate 1100 and first plate 1120 comprise triacetyl cellulose (TAC), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), poly-to naphthalenedicarboxylic acid second diester (PEN), polyvinyl alcohol (PVA) (PVA), polymethylmethacrylate (PMMA), cycloolefine polymer (COP) etc.
Preferably, the second polate 1100 and first plate 1120 have optic equidirectional.
Black battle array 1102 is formed at second polate 1100 parts of corresponding neighboring area 1155, shading light.Black battle array 1102 light that block by the lightproof area 1145 that can not control liquid crystal are to improve image quality.
Black battle array 1102 is by plated metal, metallic compound or opaque organism, and etching forms.Metal comprises chromium etc., and metallic compound comprises chromium oxide, chromium nitride etc., and opaque organism comprises carbon black (Carbon Black), blend of colors thing, fuel mixture etc.The blend of colors thing comprises the red, green, blue look.Fuel mixture comprises red, green, blue fuel.And black battle array 1102 coatings comprise after the vitrina of photoresist (Photoresist) composition, form by optical etching.At this moment, overlapping a plurality of color filter forms black battle array.
Color filter 1104a, 1104b, 1104c are formed in the viewing area 1150 of second polate 1100, only the light of transmission with provision wavelengths optionally.Color filter 1104a, 1104b, 1104c comprise the 1104a of red color filter portion, the 1104b of green color filter portion and the 1104c of blue color filter portion.Color filter 1104a, 1104b, 1104c comprise light neutralization beginning agent, monomer, bonding agent, pigment, spreading agent, solvent, photoresist etc.At this moment, color filter 1104a, 1104b, 1104c place on first plate 1120 or the passivation layer 1116.
Color filter 1104a, 1104b, 1104c comprise the numerous zone groove 1130a that remove color filter 1104a, 1104b, a 1104c part in order to form numerous zones in liquid crystal layer 1108.Numerous regional groove 1130a are provided with corresponding to transmission window 1129a.Preferably, numerous regional groove 1130a are along the center line setting of transmission window 1129a, and have the straight square shape that extends to source electrode line 1118a ' direction.At this moment, numerous zones can be less than color filter 1104a, 1104b, 1104c thickness with the groove 1130a degree of depth.
Common electrode 1106 the described second polate 1100 that forms black battle array 1102 and color filter 1104a, 1104b, 1104c comprehensively on.Common electrode 1106 comprises the transparent conductivity material of picture ITO (tin indium oxide), IZO (indium zinc oxide) or ZO (zinc paste).At this moment, the common electrode 1106 and first pixel electrode 1112 and the second pixel electrode portion 1113 are arranged side by side on first plate 1120.
Liner 1110 is on the second polate 1100 that forms black battle array 1102, color filter 1104a, 1104b, 1104c and common electrode 106.To a certain degree keep unit interstices between top substrate 1170 and the lower substrate 1180 by liner 1110.Preferably, liner 1110 comprises the column liner (Column Spacer) that is provided with corresponding to black battle array 1102.At this moment, liner 1110 comprises the liner of spherical liner (Ball Spacer) or mixing column liner and spherical liner.
Thin film transistor (TFT) 1119 forms in the reflector space 1128 of first plate 1120, and it comprises source electrode 1118a, grid 1118b, drain electrode 1118c and semiconductor layer pattern.Driving circuit (not shown) output data voltage, and pass through source electrode line 1118a ' to source electrode transmission 1118a.Output is selected signal and is transmitted to grid 1118b by gate line 1118b '.
Gate insulator 1126 places on described first plate 1120 that forms grid, electrical isolation grid 1118b and source electrode 1118a, drain electrode 1118c.Gate insulator 1126 comprises silicon nitride, monox etc.
Passivation layer 1116 places on first plate 1120 of thin film transistor (TFT) 1119 formation, exposes the contact hole of a drain electrode 1118c part.Passivation layer 1116 comprises silicon nitride 1116, monox etc.
The holding capacitor (not shown) is formed on first plate 1120, keeps between the common electrode 1106 and the second pixel electrode portion 1113 and the potential difference (PD) between the common electrode 1106 and the first pixel electrode portion 1112.
Insulation course 1114 places on first plate 1120 that forms thin film transistor (TFT) 1119 and passivation layer 1116, makes the thin film transistor (TFT) 1119 and the first pixel electrode portion 1112 or 1113 insulation of the second pixel electrode portion.Insulation course 1114 comprises the contact hole that exposes a drain electrode 1118c part.
And opening is corresponding to the part of the transmission window 1129a of insulation course 1114, and the part of transmission window 1129a of corresponding lower substrate 1180 and the part of corresponding reflector space 1128 are highly differed from one another.At this moment, residual insulation course 1114 parts in transmission window 1129a.
Insulation course 1114 comprises lug boss (Protruded Portion) 1115 and jog (Embossed Portion).Lug boss 1115 corresponding liners 1110 are provided with, and adjust an adjacent vertical orientated liquid crystal part and arrange.Jog places in the reflector space 1128, increases by the second pixel electrode portion, 1113 reflection efficiencies.
Numerous zone with protruding 1131a corresponding to numerous regional with groove 1130a and place on the passivation layer 1116.The protruding 1131a in numerous zones has the straight square shape that extends to source electrode line 1118a ' direction.At this moment, with groove 1130a a plurality of numerous protruding 1131a in zone are set, with protruding 1131a a plurality of numerous zone groove 1130a are set corresponding to numerous zones corresponding to numerous zones.Preferably, numerous zones form with insulation course 1114 with protruding 1131a.
Adjust numerous zones with protruding 1131a and/or numerous zone groove 1130a size, adjust the liquid crystal arrangement that forms numerous zones.
The first pixel electrode portion 1112 is formed at insulation course 1114 surfaces, the contact hole inner face, numerous regional with in protruding 1131a and transmission window 1131a and the transmission window 1129a in the pixel region 1140, and is electrically connected with drain electrode 1118c.The first pixel electrode portion 1112 by put on and common electrode 1106 between Control of Voltage liquid crystal layer 1108 in liquid crystal, adjust transmittance.The first pixel electrode portion 1112 comprises tin indium oxide ITO, indium zinc oxide IZO, zinc paste ZO of transparent conductivity material etc.
The second pixel electrode portion 1113 places on the insulation course 1114 in the reflector space 1128, and it reflects exterior light.Preferably, the second pixel electrode portion 1113 is along being provided with in the lip-deep jog shapes of insulation course 1114, and to certain orientation reflection exterior light.The second pixel electrode portion 1113 comprises conductive material, and is electrically connected with drain electrode 1118c by the first pixel electrode portion 1112.
At this moment, the oriented layer (not shown) is set, can be orientated liquid crystal in top substrate 1170 and lower substrate 1180 surfaces.
Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180, seals it with the sealant (not shown).In the liquid crystal layer 1108 liquid crystal with vertical orientated (VerticalAlignment, VA), distortion (Twisted Nematic, TN) orientation, mix distortion (MixedTwisted Nematic, MTN) orientation or evenly (Homogeneous) alignment mode arrange.Preferably, liquid crystal is arranged with vertical alignment mode in the liquid crystal layer 1108.
If apply voltage between the first pixel electrode portion 1112 and the second pixel electrode portion 1113 and the common electrode 1106, then and lug boss 1115 and liner 1110 adjacent areas, transmission window 1129a and reflector space 1128 between have layer difference part (end difference, SteppedPortion), with numerous zones with groove 1130a and numerous zone with generation electric field distortion in the zone of protruding 1131a.Therefore, in liquid crystal layer 1108, form numerous zones, to improve the visual angle.
Fig. 9 A to Fig. 9 K is the method sectional view of the LCD shown in the shop drawings 6.
With reference to Fig. 9 A, at first, limit pixel region 1140 and lightproof area 1145 at first plate 1120.Pixel region 1140 comprises that transmission is from the optical transmission window 1129a of backlight assembly (not shown) generation and the reflector space 1128 of reflection exterior light.
Then, depositing electrically conductive material on first plate 1120.Then, remove a conductive material part, form grid 1118b and gate line 1118b '.Then, deposit megohmite insulant at first plate 1120 that forms grid 1118b and gate line 1118b ' on comprehensively, to form gate insulator 1126.
Then, on the gate insulator 1126 of corresponding grid 1118b, form amorphous silicon and N+ amorphous silicon, to form semiconductor layer.Then, depositing electrically conductive material on the gate insulator 1126 that forms semiconductor layer.Then, an etching conductive material part forms source electrode 1118a, source electrode line 1118a ' and drain electrode 1118c.Formation comprises the thin film transistor (TFT) 1119 of source electrode 1118a, grid 1118b, drain electrode 1118c and semiconductor layer.
Then, on first plate 1120 that forms thin film transistor (TFT) 1119, deposit megohmite insulant.
With reference to Fig. 9 B, then on the megohmite insulant of deposition, be coated with described organism.Preferably, organism comprises photoresist.
With reference to Fig. 9 C, then, utilize the organism 1114 ' and the video picture of mask exposure coating, form contact hole, lug boss 1115, jog and numerous protruding 1131a in zone.And, by the part of exposure imaging operation opening corresponding to transmission window 1129a.Exposure and video picture operation comprise an operation utilizing a mask or the several operation with a plurality of masks.When forming contact hole, lug boss 1115, jog and numerous zone with protruding 1131a by an operation utilizing a mask, a mask comprises opaque section, translucent portion and transparent part.Preferably, opaque section is corresponding to lug boss 1115, and translucent portion corresponds respectively to jog and numerous protruding 1131a in zone, and contact hole and transmission window 1129a are corresponding to transparent part.At this moment, the alternative translucent portion of mask comprises slit.Adjust translucent portion or slit width, numerous regional to adjust with protruding 1131a size.
Reference, Fig. 9 B, then, insulation course 1114, passivation layer 1116, contact hole inner face, transmission window 1129a inner face and numerous zone with protruding 1131a surface on the deposit transparent conductive material.Conductive material comprises ITO, IZO, ZO etc.Preferably, the transparent conductivity material comprises ITO.Then, the transparent conductivity material part of etching deposit forms the first pixel electrode portion 1112.In pixel electrode 1140, form the first pixel electrode portion 1112.
Then, the electric conductor of deposition high reflectance on first plate that forms the first pixel electrode portion 1112.Preferably, the electric conductor that reflectivity is high comprises aluminium and neodymium.Then, the electric conductor part that the etching reflectivity is high forms the second pixel electrode portion 1113 in reflector space 1128.
At this moment, the second pixel electrode portion 1113 has sandwich construction.When the second pixel electrode portion had sandwich construction, preferably, the second pixel electrode portion 1113 comprised molybdenum-tungalloy layer and the aluminum-neodymium alloys layer that forms on molybdenum-tungalloy layer.The second pixel electrode portion 1113 is electrically connected with drain electrode 1118c by the first pixel electrode portion 1112 and contact hole.At this moment, on insulation course 114 and contact hole inner face, form the second pixel electrode portion 1113, on a transmission window 1129a and the second pixel electrode portion, 1113 parts, form the first pixel electrode portion 1112, be electrically connected the first pixel electrode portion 1112 and drain electrode 1118c by the second pixel electrode portion 1113.
Thereby formation comprises first plate 1120, thin film transistor (TFT) 1119, source electrode line, gate line, insulation course 1114, the first pixel electrode portion 1112, the second pixel electrode portion 1113 and the numerous zone lower substrate 1180 with protruding 1131a.
With reference to Fig. 9 E, then, on second polate 1100, deposit vitrina.Then, remove a vitrina part, form black battle array 1102.At this moment, on second polate 1100, after coating vitrina and the photoresist, utilize optical etching (PhotoProcess) to form black battle array 1102.Optical etching comprises exposure process (Exposure Process) and video picture operation (Development Process).At this moment, on first plate 1120, form black battle array 1102.
With reference to Fig. 9 F, on the second polate 1100 that forms black battle array 1102, be coated with the potpourri that comprises red pigment and photoresist then.
With reference to Fig. 9 G, then utilize the potpourri 1104a ' and the video picture of mask exposure coating, form the red color filter 1104a of portion and numerous zone groove 1130a.Mask comprises slit, and slit is corresponding to numerous zone groove 1130a.Numerous zones use groove 1130a size corresponding to slit separation.At this moment, mask comprises translucent portion.Adjust the translucent portion width, to adjust numerous zones groove 1130a size.
With reference to Fig. 9 H, then on the second polate 1100 that forms black battle array 1102 and the 1104a of red color filter portion, form green color filter 1104b of portion and blue color filter portion.
With reference to Fig. 9 I, then, the translucent conductive material of deposition on the second polate 1100 of the black battle array 1102 of formation and color filter 1104a, 1104b, 1104c is to form common electrode 1106.
With reference to Fig. 9 J, then on described common electrode 1106, be coated with organism.Preferentially, described organism comprises photoresist (Photoresist) composition.Then, exposure organism, and video picture form liner 1110 on the common electrode 1106 of the black battle array 1102 of correspondence.At this moment, on first plate 1120, form liner 1110.
With reference to Fig. 9 K, commissure docks close portion's substrate 1170 and lower substrate 1180.
Then, between top substrate 1170 and lower substrate 1180, seal with sealant (Sealant, not shown) after the injection liquid crystal layer 1108.At this moment, behind drop (Drop) liquid crystal on top substrate 1170 that forms the sealant (not shown) or the lower substrate 1180, make top substrate 1170 and lower substrate 1180, form liquid crystal layer 1108 in the face of engaging.
Therefore, adjustment places the lug boss 1115 adjacent with liner 1110, the part of layer difference is arranged between transmission window 1129a and reflector space 1128 and arranges the numerous zones of formation in transmission window 1129a with numerous zones with the vertical orientated liquid crystal part in the protruding 1131a adjacent areas with groove 1130a and numerous zone.Numerous regional centers are corresponding to numerous regional with groove 1130a and numerous protruding 1131a in zone.
And, form numerous zone groove 131a with color filter 1104a, 1104b, 1104c, and, numerous protruding 1131a in zone formed with insulation course 1114, so simplified LCD manufacturing process.
Figure 10 is a LCD planimetric map according to another embodiment of the present invention, and Figure 11 is that Figure 10 first pixel electrode portion and the second pixel electrode facial planes figure, Figure 12 are the sectional view of Figure 10 along VIII-VIII ' line.
In the present embodiment, its composition structure is identical with Fig. 6 to Fig. 8 embodiment except external coating and insulation course, therefore omits its detailed description at this.
With reference to Figure 10 to Figure 13, LCD comprises top substrate 1170, lower substrate 1180 and liquid crystal layer 1108.
Top substrate 1170 comprises second polate 1100, black battle array 1102, color filter 1104a, 1104b, 1104c, external coating 1105, common electrode 1106, liner 1110 and numerous zone groove (Recess for Multi-Domain) 1132a.Top substrate 1170 comprises viewing area 1150 and surrounds the neighboring area 1155 of viewing area.
Lower substrate 1180 comprises first plate 1120, thin film transistor (TFT) 1119, source electrode 1118a ', gate line 1118b ', gate insulator 1126, passivation layer 1116, holding capacitor (not shown), insulation course 1114, the first pixel electrode portion 1112, the second pixel electrode portion 1113 and numerous zone projection (Protrusion for Multi-Domain) 1134a.Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180.
Lower substrate 1180 comprises the pixel region 1140 of display image and the lightproof area 1145 of shading light.Pixel region 1140 is corresponding to viewing area 1150, and lightproof area 1145 is corresponding to neighboring area 1155.Pixel region 1140 comprises optical transmission window 1129a that transmission produces from the backlight assembly (not shown), and the reflector space 1128 of reflection exterior light.
Black battle array 1102 is formed in the neighboring area 1155 of second polate 1100, and shading light.
Color filter 1104a, 1104b, 1104c are formed on the second polate 1100 that forms black battle array 1102, and optionally transmission only has the light of provision wavelengths.Color filter 1104a, 1104b, 1104c comprise the 1104a of red color filter portion, the 1104b of green color filter portion and the 1104c of blue color filter portion.
Color filter 1104a, 1104b, 1104c comprise the numerous zone groove 1132a that remove color filter 1104a, 1104b, a 1104c part in order to form numerous zones in liquid crystal layer 1108.Numerous zones are provided with along transmission window 1129a center line with groove 1132a, have the straight square shape that extends to source electrode line 1118a ' direction.At this moment, numerous zone can be littler than color filter 1104a, 1104b, 1104c thickness with the groove 1130a degree of depth.
External coating 1105 is formed on the second polate 1100 that forms black battle array 1102 and color filter 1104a, 1104b, 1104c, the black battle array 1102 of protection and color filter 1104a, 1104b, 1104c.And, top substrate 1170 surfaces that the black battle array 1102 of planarization and color filter 1104a, 1104b, 1104c form.
And, by opening, make corresponding to the part of the transmission window 1129a of top substrate 1170 highly different corresponding to the part of the transmission window 1129a of external coating 1105 with part corresponding to reflector space 1128.At this moment, form jog (Embossed Portion) on external coating 1105 surfaces corresponding to reflector space 1128.
At this moment, external coating 1105 parts residue in color filter 1104a, 1104b, the 1104c and numerous regional with on the groove 1132a corresponding to transmission window 1129a.Preferably, residual external coating 1105 is provided with groove 1132a along color filter 1104a, 1104b, 1104c and numerous zone.
Common electrode 1106 be formed at form black battle array 1102, color filter 1104a, 1104b, 1104c and external coating 1105 second polate 1100 comprehensively on.
Liner 1110 is formed on the second polate 1100 that forms black battle array 1102, color filter 1104a, 1104b, 1104c, external coating 1105 and common electrode 1106.Liner 1110 comprises the column liner (Column Spacer) that is provided with corresponding to black battle array 1102.
Thin film transistor (TFT) 1119 is formed in the reflector space 1128 of first plate 1120, and it comprises source electrode 1118a, grid 1118b, drain electrode 1118c and semiconductor layer pattern.
Gate insulator 1126 places on first plate 1120 that forms grid 1118b, makes grid 1118b and source electrode 1118a and drain electrode 1118c electrical isolation.
Passivation layer 1116 places on first plate 1120 that forms thin film transistor (TFT) 1119, and it comprises the contact hole that exposes a drain electrode 1118c part.
Insulation course 1114 places on first plate 1120 that forms thin film transistor (TFT) 1119 and passivation layer 1116, makes the thin film transistor (TFT) and the first pixel electrode portion 1112 and 1113 insulation of the second pixel electrode portion.Insulation course 1114 comprises the contact hole that exposes a drain electrode 1118c part.
At this moment, insulation course 1114 further comprises lug boss 1115, jog and numerous protruding 1134a in zone.
Lug boss 1115 is arranged corresponding to liner 1110, is adjusted an adjacent vertical orientated liquid crystal part.Jog places in the reflector space 1128, increases by the second pixel electrode portion, 1113 reflection efficiencies.
Numerous zones place on the insulation course 1114 with groove 1132a corresponding to numerous zones with protruding 1134a.Numerous zones have the straight square shape that extends to source electrode line 1118a ' direction with protruding 1134a.Numerous zones form with insulation course 1114 with protruding 1134a.
The first pixel electrode portion 1112 is formed at insulation course 1114 surfaces, the contact hole inner face and numerous regional with in the protruding 1134a in the pixel region 1140, and 1118c is electrically connected with drain electrode.
The second pixel electrode portion 1113 places on the insulation course 1114 in the reflector space 1128, the reflection exterior light.
Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180, seals it with sealant (Seal, not shown).Liquid crystal in the liquid crystal layer 1108 is arranged with vertical alignment mode.
If between the first pixel electrode portion 1112 and the second pixel electrode portion 1113 and common electrode 1106, apply voltage, and lug boss 1115 and liner 1110 adjacent areas, external coating 1105 and color filter 1104a, 1104b, 1104c between layer difference part (end difference, a Stepped Portion) arranged, with numerous zones with groove 1132a and numerous zone with generation distortion in the protruding 1134a adjacent areas.When liquid crystal was arranged with vertical alignment mode, the electric field by distortion in liquid crystal layer 1108 formed numerous zones, to improve the visual angle.
Figure 14 A to Figure 14 J is the method sectional view of making according to the LCD of second embodiment of the invention.
With reference to Figure 14 A, at first, form thin film transistor (TFT) 1119 at first plate 1120.Then, deposit transparent megohmite insulant on first plate 1120 that forms thin film transistor (TFT) 1119.Then, on the transparent insulation material of deposition, be coated with organism.Preferably, organism is a photoresist.
With reference to Figure 14 B, then, utilize the organism 1114 of mask exposure coating ', and video picture forms lug boss 1115, jog and numerous protruding 1134a in zone.Exposure and video picture operation comprise an operation utilizing a mask or the repeatedly operation with a plurality of masks.When forming contact hole, lug boss 1115, jog and numerous zone with protruding 1134a by an operation utilizing a mask, a mask comprises transparent part, opaque section and translucent portion.Preferably, transparent part is corresponding to contact hole, and opaque section is corresponding to lug boss 1115 and numerous protruding 1134a in zone, and translucent portion corresponds respectively to jog and transmission window 1129a.Therefore, reduce the difference of height (Height Difference) of insulation course 1114, simplified the protruding manufacturing process in numerous zones.At this moment, the alternative translucent portion of mask comprises slit.
With reference to Figure 14 C, then, the described picture zone 1140 on first plate 1120 that forms organic layer 1114 forms the first pixel electrode portion 1112.Then, form the second pixel electrode portion 1113 in the reflector space 1128 on first plate 1120 that forms the first pixel electrode portion 1112.
Thereby formation comprises first plate 1120, thin film transistor (TFT) 1119, source electrode line 1118a ', gate line 1118b ', insulation course 1114, the first pixel electrode portion 1112, the second pixel electrode portion 1113 and the numerous zone lower substrate 1180 with protruding 1134a.
With reference to Figure 14 D, then, on second polate 1100, form black battle array 1102.Then, on the second polate 1100 that forms black battle array 1102, be coated with the potpourri that comprises red pigment and photoresist.
With reference to Figure 14 E, then, utilize the potpourri 1104a ' of mask exposure coating, and video picture forms the red color filter 1104a of portion and numerous zone groove 1132a.
With reference to Figure 14 F, then, on the second polate 1100 that forms black battle array 1102 and the 1104a of red color filter portion, form green color filter 1104b of portion and blue color filter portion.
With reference to Figure 14 G, then, coating comprises organism on the second polate that forms black battle array 1102 and color filter 1104a, 1104b, 1104c.
With reference to Figure 14 H, then, utilize the organism 1105 of mask exposure coating ', color filter 1104a, 1104b, a 1104c part and numerous zone groove 1132a corresponding to lower substrate 1180 transmission window 1129a are exposed in and video picture.
With reference to Figure 14 I, then, deposit transparent conductive material on the second polate 1100 that forms black battle array 1102, color filter 1104a, 1104b, 1104c and external coating 1105 forms common electrode 1106.
Then, on corresponding to the part of the common electrode 1106 of deceiving battle array 1102, form liner 1110.
With reference to Figure 14 J, then, in the face of engaging top substrate 1170 and lower substrate 1180.
Then, between top substrate 1170 and lower substrate 1180, inject liquid crystal layer 1108, use sealant (Sealant, not shown) sealing then.
Therefore, if between common electrode 1106 and the first pixel electrode portion 1112 and the second pixel electrode portion 1113, apply voltage, then and liner 1110 and lug boss 1115 adjacent areas, external coating 1105 and color filter 1104a between the part that layer difference arranged and with numerous zones with groove 1132a and numerous zone with protruding 1134a adjacent areas in the numerous zones of formation.
And, highly different with liquid crystal layer 1108 according to external coating 1105 corresponding to reflector space corresponding to liquid crystal layer 1108 height of transmission window 1129a, therefore reduce 1114 layers of difference of insulation course, form numerous protruding 1134a in zone easily.
Figure 15 is a LCD planimetric map according to another embodiment of the present invention, and Figure 16 is the sectional view of Figure 15 along X-X ' line.
In the present embodiment, except numerous zones identical with Figure 10 to Figure 13 example structure with groove and numerous zone with the structure the projection, so detailed description of omitting its repeating part.
With reference to Figure 15 and Figure 16, LCD comprises top substrate 1170, lower substrate 1180 and liquid crystal layer 1108.
Top substrate 1170 comprises second polate (Second Plate) 1100, black battle array 1102 (Black Matrix) 1102, color filter 1104a, 1104b, external coating 1105, common electrode 1106, liner 1110 and two numerous zone groove 1132b.At this moment, top substrate 1170 can comprise numerous zones groove.Top substrate 1170 comprises viewing area 1150 and surrounds the neighboring area 1155 of viewing area.
Lower substrate 1180 comprises first plate 1120, thin film transistor (TFT) 1119, source electrode line 1118a ', gate line 1118b ', gate insulator 1126, passivation layer 1116, holding capacitor (not shown), insulation course 1114, the first pixel electrode portion 1112, the second pixel electrode portion 1113 and two numerous zones projection (Protrusions for Multi-Domain) 1134b.At this moment, lower substrate 1180 can comprise that a plurality of numerous zones are with protruding.
Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180.
Lower substrate 1180 comprises the pixel region 1140 of display image and the lightproof area 1145 of shading light.Pixel region 1140 is corresponding to viewing area 1150, and lightproof area 1155 is corresponding to neighboring area 1150.Pixel region 1140 comprises transmission window 1129a and reflector space 1128.
Color filter 1104a, 1104b are formed on the second polate that forms black battle array 1102, only select the transmittance with provision wavelengths.Color filter 1104a, 1104b comprise red color filter 1104a portion, the 1104b of green color filter portion and blue color filter portion.
Color filter 1104a, 1104b comprise the numerous zone groove 1132b that remove color filter 1104a, a 1104b part in order to form numerous zones in liquid crystal layer 1108.Numerous zones are provided with along transmission window 1129a center line with groove 1132b, and it has square shape.This moment, each numerous zone had straight square shape to source electrode line 1118a ' extension with groove 1132b.
External coating 1105 is on the second polate 1100 that forms black battle array 1102 and color filter 1104a, 1104b.
And, by opening, make part height corresponding to the transmission window 1129a of top substrate 1170 corresponding to the part of the transmission window 1129a of external coating 1105 with corresponding highly different with the part of reflector space 1128.
Insulation course 1114 is provided with on first plate 1120 that forms thin film transistor (TFT) 1119 and passivation layer 1116, makes the thin film transistor (TFT) 1119 and the first pixel electrode portion 1112 and 1113 insulation of the second pixel electrode portion.Insulation course 1114 comprises the contact hole that exposes a drain electrode 1118c part.
At this moment, insulation course 1114 further comprises lug boss 1115, jog and two numerous protruding 1134b in zone.
Numerous zones place on the insulation course 1114 with groove 1132b corresponding to numerous zones with protruding 1134b.Numerous zones have square shape with protruding 1134b.At this moment, numerous zones also can have the straight square shape that extends to the source electrode line direction with protruding 1134b.Numerous zones form with insulation course with protruding 1134b.
Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180, and is sealed with sealing gasket (Seal, not shown).Liquid crystal is arranged with vertical orientated (VerticalAlignment) pattern in the liquid crystal layer 1108.
If apply voltage between the first pixel electrode portion 1112 and common electrode 1106, in 1108 a plurality of zones of formation in the adjacent liquid crystal layer of protruding 1134b with groove 1132b with corresponding to numerous regional 1132b and with numerous zones in each numerous zone.Thereby, increase the number of regions that is included in numerous zones, to improve the visual angle.
Figure 17 is a LCD planimetric map according to another embodiment of the present invention, and Figure 18 is Figure 17 first pixel electrode portion and the second pixel electrode facial planes figure, and Figure 19 is the sectional view of Figure 17 along XI-XI ' line.
In the present embodiment, the structure except the second pixel electrode portion and the first pixel electrode portion is as Figure 15 and Figure 16 embodiment, so the detailed description of omitting its repeating part.
With reference to Figure 17 to Figure 19, described LCD comprises top substrate 1170, lower substrate 1180 and liquid crystal layer 1108.
Top substrate 1170 comprises second polate 1100, black battle array 1102, color filter 1104a, 1104b, external coating 1105, common electrode 1106, liner 1110 and numerous zone groove 1132c.Top substrate 1170 comprises viewing area 1150 and surrounds the neighboring area 1155 of viewing area.
Lower substrate 1180 comprises first plate 1120, thin film transistor (TFT) 1119, source electrode line 1118a ', gate line 1118b ', gate insulator 1126, passivation layer 1116, holding capacitor (not shown), insulation course 1114, the first pixel electrode portion 1220, the second pixel electrode portion 1230 and two numerous zones projection (Protrusions for Multi-Domain) 1134c.Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180.
Lower substrate 1180 comprises the pixel region 1140 of display image and the lightproof area 1145 of shading light.Pixel region 1140 is corresponding to viewing area 1150, and lightproof area 1145 is corresponding to neighboring area 1150.Pixel region 1140 comprises transmission window 1129a and reflector space 1128.
Color filter 1104a, 1104b comprise the numerous zone groove 1132C that remove color filter 1104a, a 1104b part in order to form numerous zones in liquid crystal layer 1108.Numerous zones are provided with along transmission window 1129a center line with groove 1132c, and it has square shape.This moment, each numerous zone had square shape with groove 1132c.
Insulation course 1114 is provided with on first plate 1120 that forms thin film transistor (TFT) 1119 and passivation layer 1116, and insulation course 1114 comprises contact hole, lug boss 1115, jog and two the numerous protruding 1134c in zone that expose a drain electrode 1118c part.
Numerous zones place on the insulation course 1114 with groove 1132c corresponding to numerous zones with protruding 1134c.
The first pixel electrode portion 1112 comprises first 1212a of transparency electrode portion, second 1212b of transparency electrode portion, the first connecting portion 1136a and the second connecting portion 1136b.
First 1212a of transparency electrode portion and second 1212b of transparency electrode portion place on the interior insulation course 1114 of transmission window 1129a.First 1212a of transparency electrode portion and second 1212b of transparency electrode portion setting adjacent one another are.
The first connecting portion 1136a places between first 1212a of transparency electrode portion and second 1212b of transparency electrode portion, is electrically connected first 1212a of transparency electrode portion and second 1212b of transparency electrode portion.Preferably, first 1212a of transparency electrode portion and second 1212b of transparency electrode portion are square.
The second connecting portion 1136b places the first connecting portion 1136a opposite of second 1212b of transparency electrode portion, is electrically connected second 1136b of transparency electrode portion and the second pixel electrode portion 1230.The part of second 1136b of transparency electrode portion extends in the contact hole, can be electrically connected the drain electrode 1118c of second 1136b of transparency electrode portion and thin film transistor (TFT) 1119.
The second pixel electrode portion 1230 places on the insulation course 1114 in the reflector space 1128, is square.
At this moment, first 1212a of transparency electrode portion, second 1212b of transparency electrode portion and the second pixel electrode portion 1230 can become polygon, circle etc.Polygon comprises quadrangle, sexangle, octagon etc.
Adjust between first 1212a of transparency electrode portion and second 1212b of transparency electrode portion distance between distance and/or second 1212b of transparency electrode portion and the second pixel electrode portion 1230, to adjust liquid crystal arrangement in the liquid crystal layer 1108.
Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180, and liquid crystal is arranged with vertical alignment mode in the liquid crystal layer 1108.
If between the first pixel electrode portion 1220 and common electrode 1106, apply voltage, form a plurality of zones with groove 1132c with in each numerous zone corresponding to the liquid crystal layer 1108 adjacent with protruding 1134c of numerous zones with groove 1132c in each numerous zone.
And, between first 1212a of transparency electrode portion and second 1212b of transparency electrode portion, and second 1212b of transparency electrode portion and the second pixel electrode portion 1230 between produce electric distortion, to adjust liquid crystal arrangement, improve the visual angle.
Figure 20 is a LCD planimetric map according to another embodiment of the present invention, and Figure 21 is the sectional view of Figure 20 along XII-XII ' line.
In the present embodiment, the structure except second numerous zones usefulness groove is as the structure of Figure 17 to Figure 19 embodiment, the therefore detailed description of omitting its repeating part.
LCD comprises top substrate 1170, lower substrate 1180 and liquid crystal layer 1108.
Top substrate 1170 comprise second polate 1100, black battle array 1102, color filter 1104a, 1104b, external coating 1105, common electrode 1106, liner 1110 and two first numerous zones with groove 1132d and second numerous zones with grooves 1137.Top substrate 1170 comprises viewing area 1150 and surrounds the neighboring area 1155 of viewing area 1150.
Lower substrate 1180 comprises first plate, 1120 thin film transistor (TFT)s 1119, source electrode line 1118a ', gate line 1118b ', gate insulator 1126, passivation layer 1116, holding capacitor (not shown), insulation course 1114, the first pixel electrode portion 1220, the second pixel electrode portion 1230 and two numerous zones projection (Protrusions for Multi-Domain) 1134d.Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180.
Lower substrate 1180 comprises the pixel region 1140 of display image and the lightproof area 1145 of shading light.Pixel region 1140 is corresponding to viewing area 1150, and lightproof area 1145 is corresponding to neighboring area 1155.Pixel region 1140 comprises transmission window 1129a and reflector space 1128.
By opening, the part height of the transmission window 1129a of top substrate 1170 is highly different with part corresponding to reflector space 1128 corresponding to the part of the transmission window 1129a of external coating 1105.
And, second numerous zones groove 1137 is set in the external coating 1105 corresponding to lower substrate 1180 reflector spaces 1128.
Numerous zones place on the insulation course 1114 with groove 1132d corresponding to first numerous zones with protruding 1134d.
If between the second pixel electrode portion 1230 and common electrode 1106, apply voltage, with second numerous regional groove 1137 adjacent areas in produce the electric field distortion.Thereby, adjust liquid crystal arrangement in the liquid crystal layer 1108 that places in the second pixel electrode portion 1230, in reflector space 1128, form a plurality of zones.
Figure 22 is a LCD planimetric map according to another embodiment of the present invention, and Figure 23 is the sectional view of Figure 22 along XIII-XIII ' line.
In the present embodiment, except first numerous zones with groove and the second numerous zone with structure the grooves as Figure 20 and Figure 21 embodiment, the therefore detailed description of omitting its repeating part.
LCD comprises top substrate 1170, lower substrate 1180 and liquid crystal layer 1108.
Top substrate 1170 comprise second polate 1100, black battle array 1102, color filter 1104a, 1104b, external coating 1105, common electrode 1106, liner 1110 and two first numerous zones with groove 1132e and second numerous zones with grooves 1138.Top substrate 1170 comprises viewing area 1150 and surrounds the neighboring area 1155 of viewing area 1150.
Lower substrate 1180 comprises first plate, 1120 thin film transistor (TFT)s 1119, source electrode line 1118a ', gate line 1118b ', gate insulator 1126, passivation layer 1116, holding capacitor (not shown), insulation course 1114, the first pixel electrode portion 1220, the second pixel electrode portion 1230 and two numerous zones projection (Protrusions for Multi-Domain) 1134e.Liquid crystal layer 1108 places between top substrate 1170 and the lower substrate 1180.
Lower substrate 1180 comprises the pixel region 1140 of display image and the lightproof area 1145 of shading light.Pixel region 1140 is corresponding to viewing area 1150, and lightproof area 1145 is corresponding to neighboring area 1155.Pixel region 1140 comprises transmission window 1129a and reflector space 1128.
Color filter 1104a, 1104b comprise two numerous zone groove 1132e that remove color filter 1104a, a 1104b part in order to form numerous zones in liquid crystal layer 1108.Numerous regional groove 1132e depth ratio color filter 1104a, 1104b thickness are little.
Second numerous zones are set with grooves 1138 in the external coating 1105 corresponding to the reflector space 1128 of lower substrate 1180.Preferably, second numerous zones are identical with groove 1132e size with first numerous zones with groove 1138 sizes.
Numerous zones, place on the insulation course 1114 corresponding to first numerous zone groove 1132e with protruding 1134e.
Thereby, adjust described first numerous zones with groove 1132e and described second numerous zones groove 1138 sizes, to adjust liquid crystal arrangement in the described liquid crystal layer 1108.
Picture display of the present invention forms vertical orientated (also comprise be not parallel to substrate and with the orientation of substrate formation certain angle) and numerous zone, not only can improve image quality, and according to circumstances can omit friction process.
And LCD comprises that numerous zones with groove and numerous zones projection, form numerous zones in liquid crystal layer, improves the visual angle.
And, between the first transparency electrode portion and the second transparency electrode portion, and the second transparency electrode portion and the second pixel electrode portion between produce electric distortion, to adjust liquid crystal arrangement, improve the visual angle.
And, simplified color filter substrate and LCD manufacturing process, reduce manufacturing expense.
The above is the preferred embodiments of the present invention only, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.Within the spirit and principles in the present invention all, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.