CN101165205A - Method and device for coating anti reflection passive film on crystal silicon solar cell sheet - Google Patents
Method and device for coating anti reflection passive film on crystal silicon solar cell sheet Download PDFInfo
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- CN101165205A CN101165205A CNA2006100220628A CN200610022062A CN101165205A CN 101165205 A CN101165205 A CN 101165205A CN A2006100220628 A CNA2006100220628 A CN A2006100220628A CN 200610022062 A CN200610022062 A CN 200610022062A CN 101165205 A CN101165205 A CN 101165205A
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- 239000011248 coating agent Substances 0.000 title claims abstract description 34
- 238000000576 coating method Methods 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 40
- 229910052710 silicon Inorganic materials 0.000 title claims description 40
- 239000010703 silicon Substances 0.000 title claims description 40
- 239000013078 crystal Substances 0.000 title claims description 32
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 32
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 16
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract 2
- 230000005540 biological transmission Effects 0.000 claims description 15
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 14
- 239000002826 coolant Substances 0.000 claims description 7
- 238000007747 plating Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- OUUQCZGPVNCOIJ-UHFFFAOYSA-N hydroperoxyl Chemical compound O[O] OUUQCZGPVNCOIJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000376 reactant Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- -1 hydrogen silicon nitride Chemical class 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000012856 packing Methods 0.000 claims description 3
- 230000005571 horizontal transmission Effects 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 10
- 238000004544 sputter deposition Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 description 25
- 229910020776 SixNy Inorganic materials 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 230000009849 deactivation Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000001149 thermolysis Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The process of coating antireflection passivating film onto crystalline silicon solar cell includes heating the solar cell to 200-400 deg.c, inflating reactive gas nitrogen and ammonia to the sputtering chamber, magnetically controlled sputtering with rotating MF twin target, closed-loop nitrogen flow rate controlling with one PEM closed-loop balance control unit, and controlling ammonia flow rate with one mass flowmeter, so as to deposit the antireflection passivating film of hydrogen doped silicon nitride film. The process is safe and reliable. The apparatus for coating antireflection passivating film includes MF twin reactive magnetically controlled sputtering equipment and PEM closed-loop balance control unit, and has high technological stability, high deposition efficiency, high silicon nitride depositing efficiency and low cost.
Description
Technical field:
The present invention relates to the production method and the equipment of coating anti reflection passive film, particularly be a kind of on crystal silicon solar cell sheet the method and apparatus of coating anti reflection passive film.
Background technology:
At present, the anti reflection passive film of polysilicon solar cell all be using plasma enhanced chemical Vapor deposition process (PECVD) produce mix hydrogen silicon nitride film layer (SixNy:H), this is that it has good surface and body deactivation function because this rete is compared with other anti-reflective films (as TiO2).But adopt the PECVD technology to produce the SixNy:H film and have several significant disadvantage: at first, because what chemical Vapor deposition process (PECVD) used when producing the SixNy:H film is silane gas, it is a kind of volatile gas, and is very dangerous, can blast because of carelessness; Secondly, the maintenance intervals during production is lacked (almost need shut down repair and maintenance equipment every day), is unfavorable for the raising of output; The 3rd, the thickness evenness when the big area on-line coating is difficult to guarantee that therefore, the quality of product is difficult to guarantee during production in enormous quantities.As patent 200380107849.9 and 200510042673.4, the former is disclosed to be the siliceous and nitrogen source gas of a kind of heated substrate to 550 ℃ thermolysis, this is a kind of chemical vapor deposition process (PECVA) in fact still, drop to 550 ℃ or lower nothing but high temperature (800-900 ℃) thermolysis of traditional chemical vapor deposition process (PECVA) is siliceous and nitrogen source gas, but still be a kind of comparatively dangerous operation, deposited silicon nitride on polysilicon chip particularly, the silane gas that produces in its production process (SiH) very easily causes combustion explosion, and production is absolutely unsafe.The latter (200510042673.4) is disclosed to be a kind of silicon chip method for manufacturing solar battery, and wherein the cvd nitride silicon technology still adopts chemical vapor deposition process (PECVA), has potential safety hazard equally.
Summary of the invention:
The objective of the invention is in order to overcome above deficiency, provide a kind of safe and reliable, at a lower temperature, adopt the method for physics mode (without silane gas) coating anti reflection passive film on crystal silicon solar cell sheet.Another object of the present invention is for a kind of stability of guaranteeing technology is provided, and improves sedimentation effect, cvd silicon oxide efficient height, the equipment of coating anti reflection passive film on crystal silicon solar cell sheet that cost is low.
The object of the present invention is achieved like this:
The present invention is in the method for coating anti reflection passive film on crystal silicon solar cell sheet, this method is 200～400 ℃ of scopes are heated situation to solar battery sheet under, in the magnetron sputtering plating working spaces, charge into reactant gas nitrogen, charge into ammonia simultaneously, the twin intermediate frequency target that utilizes rotation is to its magnetron sputtering, utilize plasma emission spectral intensity monitor closed loop balance control device to carry out the closed loop flow control simultaneously to charging into reactant gases nitrogen, control ammonia flow with mass flowmeter, deposition is mixed the anti reflection passive film of hydrogen silicon nitride on the battery sheet.Heat under the situation solar battery sheet being carried out 400 ℃ of scopes of 200 ∽, in the magnetron sputtering plating working spaces, charge into reactant gas nitrogen (N2), charge into ammonia (NH3) simultaneously, twin intermediate frequency silicon (Si) target that utilizes rotation is to its magnetron sputtering, utilize plasma emission spectral intensity monitor closed loop balance control device (PEM) to carry out the closed loop flow control simultaneously to charging into reactant gas nitrogen (N2), control ammonia (NH3) flow with mass flowmeter, deposition is mixed the anti reflection passive film of hydrogen silicon nitride (SixNy:H) on the battery sheet, plated film adopts the technology of the twin intermediate frequency reaction magnetocontrol sputtering of PEM (plasma intensity monitor) closed-loop control to add the flow of controlling NH3 (ammonia) with mass flow controller, and (its work principle is seen the twin intermediate frequency reaction magnetocontrol sputtering of Fig. 2 band PEM closed-loop control and mixed the hydrogen synoptic diagram to realize being coated with hydrogen doping silicon nitride (SixNy:H) rete.), produce the three big defectives that exist when the SixNy:H film has overcome with the production of PECVD method with this method, both there be not volatile gas, fool proof environmental protection again during production, the cycle of maintenance is longer again, simultaneously can large-area continuous production.Adopting PEM control and production line perfect construction design, guaranteed the homogeneity of product, improved the quality and the output of product greatly, is the optimal method of suitability for industrialized production.
Above-mentioned on crystal silicon solar cell sheet the method for coating anti reflection passive film, with the crystal silicon solar cell sheet substrate delivery dolly of packing into, the cell substrate surface is coated with anti reflection passive film with the horizontal method in plane.
Above-mentioned on crystal silicon solar cell sheet the method for coating anti reflection passive film, be to utilize infrared lamp box or stainless steel heating tube that the battery sheet is heated in 200～400 ℃ of scopes to the heating of solar battery sheet.For the SixNy:H rete that guarantees to plate out has surface and body deactivation function, during plated film requirement 200 ℃～400 ℃ adjustable, so, be provided with the temperature controlling system of PID temperature controller simultaneously infrared lamp (or stainless steel heating tube) being set and having heat shield structure.
The equipment of the present invention's coating anti reflection passive film on crystal silicon solar cell sheet, the feeding platform that connects is successively arranged in the equipment, preceding lock chamber, preceding holding chamber, preceding surge chamber, have the twin intermediate frequency silicon target of rotation and power supply and plasma emission spectral intensity monitor closed loop balance control device and with plasma decompose source of hydrogen gas obtain hydroperoxyl radical and make silicon nitride layer be exposed to hydroperoxyl radical ammonia charge into magnetron sputtering plating working spaces with mass flow controller, back surge chamber, back holding chamber, back lock chamber, blanking bench, the vacuum suction unit that links to each other with each chamber, Controlling System, Pneumatic reverse turning bed valve, heating system, the twin intermediate frequency silicon target of rotation is compared with fixed silicon target in the past, target utilization can reach 85%, reduced production cost, and adopted the twin intermediate frequency target in fixed plane in the past, because the sputter position is constant, the very fast local loss of target, target utilization has only 15-20%, and because of the target rotation is difficult for accumulating deielectric-coating and the particulate that reaction generates at target material surface, improve the quality of deposition face, reduced the stability that the surface is fallen slag and improved work.
The transport sector that pair battery sheet delivery and horizontal transmission are arranged in the above-mentioned equipment.
Above-mentioned on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, the transmission shaft of transport sector has the structure of logical water coolant.Because system has higher Heating temperature, therefore the requirement to transmission rig is different from general continuous magnetron sputtering coating film production line, and the ad hoc here cover of having counted is with water-cooled transmission rig.
Above-mentioned on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, battery sheet transport sector has the photo mounting stand by battery sheet specification lattice, photo mounting stand is assembled with circular arc rail or V-type rail or the square type rail that matches with transport sector transmission shaft and wheel.This photo mounting stand can be overlapping easily after going out production line, transports back to feeding platform at the successively overlapping pusher of discharge pedestal and reuse, and successively feeds feeding platform after loading onto the battery sheet of coating anti reflection passive film not.
Above-mentioned on crystal silicon solar cell sheet the production unit of coating anti reflection passive film, magnetron sputtering working spaces vacuum chamber body wall has the structure of logical water coolant, the logical water coolant of vacuum chamber cools off it.
Above-mentioned on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, heating system adopts infrared lamp or stainless steel heating tube.
Above-mentioned on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, heating system is provided with the pre-thermal sub-system of at least one preheating chamber, at least one preheating chamber is arranged at before the feeding platform, also be provided with sub-feeding platform before the preheating chamber, can set the station of 3 belt feeding platforms and preheating chamber, can accelerate the crystal silicon solar cell sheet preheating, solve the time-consuming difficult problem of heating, significantly improve output.
The method of the present invention's coating anti reflection passive film on crystal silicon solar cell sheet, utilize the vacuum suction unit to be found time in each working spaces, adopt the twin reaction magnetocontrol sputtering mode of intermediate frequency under room temperature state on polysilicon chip the continuous magnetron sputtering deposited silicon nitride, charge into siliceous and nitrogen source gas, and decompose source of hydrogen gas with plasma and obtain hydroperoxyl radical, make silicon nitride layer be exposed to hydroperoxyl radical.
Production method of the present invention at a lower temperature, adopt physics mode (without silane gas) deposited silicon nitride production method, overcome the three big defectives that exist when producing with the PECVD method, safe and reliable.Present device has adopted twin reaction magnetocontrol sputtering device of intermediate frequency and PEM closed loop balance control device, has guaranteed the stability of technology, has improved sedimentation effect, the high and low cost of deposited silicon nitride output.
Description of drawings:
Fig. 1 is a technological process of production synoptic diagram of the present invention.
Fig. 2 is a production unit synoptic diagram of the present invention.
Fig. 3 is the vertical view of Fig. 2.
Fig. 4 is for being with the twin intermediate frequency reaction magnetocontrol sputtering of PEM closed-loop control and mixing the hydrogen synoptic diagram in the production unit of the present invention.
Fig. 5 is with water-cooled transmission rig and installation dolly synoptic diagram in the production unit of the present invention.
Fig. 6 is another synoptic diagram of production unit of the present invention.
Embodiment:
Embodiment 1:
Referring to Fig. 1～Fig. 5, the present invention's production method of coating anti reflection passive film on crystal silicon solar cell sheet adopts the horizontal disposable continuous operation mode that passes through, every (each installs dolly) but totally 70 of applying polycrystalline silicon solar battery sheet 156mm * 156mm, productive temp is the 4min/ frame, and the highest attainable vacuum of sputter working spaces is 5 * 10
-4Pa.This device comprises and is connected with feeding platform 1, preceding lock chamber 2, preceding holding chamber 3, preceding surge chamber 4, magnetron sputtering plating working spaces 5, back surge chamber 6, back holding chamber 7, back lock chamber 8, blanking bench 9, the vacuum suction unit 10 that links to each other with each chamber, Controlling System 11, Pneumatic reverse turning bed valve 12, heating system 13 in turn.
Fig. 4 is for being with the twin intermediate frequency reaction magnetocontrol sputtering of PEM closed-loop control and mixing the hydrogen synoptic diagram in the production unit of the present invention.Nitrogen 37 (N are arranged on the vacuum chamber 16 of sputter coating working spaces 5
2), argon gas 25 (Ar), ammonia 26 (NH
3) charge into mouth 27, the nitrogen (N that has control to inject
2) accurate true pipe 24, optical fiber 23, prime amplifier and wave filter 22, PEM controller 21, flow director 19, the piezo controller 20 of tolerance, intermediate frequency power supply 18, twin negative electrode silicon target 17.
Fig. 5 is with water-cooled transmission rig and installation dolly synoptic diagram in the production unit of the present invention.Because system has higher Heating temperature, therefore the requirement to transmission rig is different from general continuous magnetron sputtering coating film production line, and the ad hoc here cover of having counted is with water-cooled transmission rig.The sandwich structure 30 that logical water coolant is arranged on the vacuum chamber 16, the work rest 15 of dress crystal silicon sheet 14 is on travelling bogie 40, the circular arc rail 29 that matches with transport sector power wheel 28 is arranged on the travelling bogie 40, the transmission shaft 31 of transport sector has the structure of logical water coolant, main driving wheel 32 drives transmission shaft 31 and power wheel 28 rotates, transmission shaft 31 has cooling water inlet 34 and cooling water outlet 33, transmission shaft 31 adopts magnetic current sealing 36 with vacuum chamber 16, and transmission shaft 31 is supported by the bearing housing 35 of band water-cooled body.
Its working process is as follows:
1. the crystal silicon sheet 14 after pre-treatment is qualified at feeding platform 1 place that is in the clean room by every 70 installation in position, when preceding lock chamber 2 is in atmospheric condition, open the first Pneumatic reverse turning bed valve 12 (door lock), work rest 15 enters preceding lock chamber 2 fast, close the first road valve 12, start vacuum suction unit 10 (2 2H-150 slide valve pumps), preceding lock chamber 2 is taken out in 1 * 10
3Pa starts the ZJP-600 lobe pump, and preceding lock chamber is evacuated to 1Pa;
2. open the second road valve 12, work rest 15 enters preceding holding chamber 3 fast, and (holding chamber, forward and backward surge chamber, sputter working spaces, back holding chamber all are evacuated to 5 * 10 by separately vacuum suction unit before this moment
-4The highest attainable vacuum of Pa, each chamber all has been in the normal heated condition of well heater simultaneously, holding chamber is about 150 ℃ before making, the sputter working spaces is 200 ℃～400 ℃ (regulating according to processing requirement), about 100 ℃ of back surge chamber, workpiece crystal silicon sheet 14 is preheated to about 150 ℃ (during the holding chamber position, can close automatically by the second road valve before arrival for workpiece);
3. open the 3rd road valve 12, surge chamber 4 before work rest arrives fast, move (according to processing requirement with the speed of plated film then, the work rest travelling speed is adjustable at 0.5m/min～3m/min), the twin negative electrode 17 of two pairs of rotations this moment is in the working order that mixes up in advance, every anticathode Si target 17 adopts intermediate frequency power supply 18 power supplies of 50KW, and concrete power is according to the travelling speed fit adjustment of the thickness and the work rest of processing requirement.Regulate the Ar tolerance of sending into mass flowmeter, the working vacuum that makes working spaces 5 is in (2～3) * 10
-1About Pa.Nitrogen (N with the 21 control injections of PEM closed loop system
2) tolerance, the realization response sputter generates silicon nitride (SixNy) film, simultaneously through mass flowmeter control ammonia (NH
3) injection rate (regulating) by processing requirement, what deposit best proportioning mixes hydrogen silicon nitride (SixNy:H) rete (note regulating the temperature of heating during plated film, guarantee battery sheet surface and body deactivation function);
4. open the 4th road valve, the work rest that has plated the SixNy:H rete is closed the 4th road valve through entering back holding chamber 7 fast behind the surge chamber 6 later, and workpiece moves back temperature in this chamber cooling;
5. open the 5th road valve, work rest enters back lock chamber 8 fast, close the 5th road valve, workpiece is further moved back temperature (can charge into exsiccant N2), by purging valve backward lock chamber put into atmosphere, when chamber to be locked is in atmospheric condition, open the 6th road valve, work rest arrives blanking bench fast, closes the 6th road valve.So far, a workpiece has been finished whole process, enters the postorder work such as quality test, examination, classification, packing of product.
Embodiment 2:
Fig. 6 has provided the embodiment of the invention 2 figure.Present embodiment 2 is basic same with embodiment 1.Do not exist together be in feeding platform 1 arranged around 3 stations of preheating chamber 39 of belt feeding platform 38 and band stainless steel heating tube 13, can accelerate the crystal silicon solar cell sheet preheating, solve the time-consuming difficult problem of heating, improve output.
The various embodiments described above are that foregoing of the present invention is further described, but this should be interpreted as that the scope of the above-mentioned theme of the present invention only limits to the foregoing description.All technology that realizes based on foregoing all belong to scope of the present invention.
Claims (10)
1. the method for coating anti reflection passive film on crystal silicon solar cell sheet, it is characterized in that this method is 200～400 ℃ of scopes are heated situation to solar battery sheet under, in the magnetron sputtering plating working spaces, charge into reactant gas nitrogen, charge into ammonia simultaneously, the twin intermediate frequency target that utilizes rotation is to its magnetron sputtering, utilize plasma emission spectral intensity monitor closed loop balance control device to carry out the closed loop flow control simultaneously to charging into reactant gases nitrogen, control ammonia flow with mass flowmeter, deposition is mixed the anti reflection passive film of hydrogen silicon nitride on the battery sheet.
2. according to claim 1 on crystal silicon solar cell sheet the method for coating anti reflection passive film, it is characterized in that the crystal silicon solar cell sheet substrate delivery dolly of packing into is coated with anti reflection passive film with the horizontal method in plane to the cell substrate surface.
3. according to claim 1 and 2 on crystal silicon solar cell sheet the method for coating anti reflection passive film, it is characterized in that to solar battery sheet add thermal utilization infrared lamp case or the stainless steel heating tube heats in 200～400 ℃ of scopes the battery sheet.
4. the equipment of coating anti reflection passive film on crystal silicon solar cell sheet, it is characterized in that having in the equipment feeding platform that connects successively, preceding lock chamber, preceding holding chamber, preceding surge chamber, have the twin intermediate frequency silicon target of rotation and power supply and plasma emission spectral intensity monitor closed loop balance control device and with plasma decompose source of hydrogen gas obtain hydroperoxyl radical and make silicon nitride layer be exposed to hydroperoxyl radical ammonia charge into magnetron sputtering plating working spaces with mass flow controller, back surge chamber, back holding chamber, back lock chamber, blanking bench, the vacuum suction unit that links to each other with each chamber, Controlling System, Pneumatic reverse turning bed valve, heating system.
5. according to claim 4 on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, it is characterized in that having in the equipment transport sector of pair battery sheet delivery and horizontal transmission.
6. according to claim 5 on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, it is characterized in that the transmission shaft of transport sector has the structure of logical water coolant.
7. according to claim 5 or the 6 described equipment that hinder very much coating anti reflection passive film on the energy battery sheet at crystalline silicon, it is characterized in that transport sector has the photo mounting stand by battery sheet specification lattice, photo mounting stand is assembled with circular arc rail or V-type rail or the square type rail that matches with transport sector transmission shaft and wheel.
According to claim 4 or 5 or 6 described on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, it is characterized in that magnetron sputtering plating working spaces vacuum chamber body wall has the structure of logical water coolant.
According to claim 4 or 5 or 6 described on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, it is characterized in that heating system adopts infrared lamp or stainless steel heating tube.
According to claim 4 or 5 or 6 described on crystal silicon solar cell sheet the equipment of coating anti reflection passive film, it is characterized in that heating system is provided with the pre-thermal sub-system of at least one preheating chamber, at least one preheating chamber is arranged at before the feeding platform, also is provided with sub-feeding platform before the preheating chamber.
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| CNA2006100220628A CN101165205A (en) | 2006-10-18 | 2006-10-18 | Method and device for coating anti reflection passive film on crystal silicon solar cell sheet |
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|---|---|---|---|
| CNA2006100220628A CN101165205A (en) | 2006-10-18 | 2006-10-18 | Method and device for coating anti reflection passive film on crystal silicon solar cell sheet |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101805891A (en) * | 2010-04-01 | 2010-08-18 | 河北大学 | Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films |
| WO2010147483A1 (en) * | 2009-06-17 | 2010-12-23 | Rec Solar As | Method for improved passivation and solar cell with improved passivation |
| CN101764176B (en) * | 2008-11-03 | 2011-11-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for manufacturing silicon solar cells |
| CN102569533A (en) * | 2012-03-21 | 2012-07-11 | 中山大学 | Method for preparing passivation antireflection film on front surface of crystalline silicon solar battery |
| CN102864438A (en) * | 2011-06-21 | 2013-01-09 | Q-电池公司 | Plasma-assistant deposition method and equipment for carrying out same |
| CN102104088B (en) * | 2009-12-17 | 2014-03-12 | 吉林庆达新能源电力股份有限公司 | Method for depositing amorphous silicon film in solar battery production |
| CN104513965A (en) * | 2014-12-22 | 2015-04-15 | 深圳市拓日新能源科技股份有限公司 | Magnetron sputtering and coating equipment for silicon nitride deposition and coating method |
| CN104694903A (en) * | 2014-02-26 | 2015-06-10 | 陈庆丰 | Continuous physical vacuum coating equipment |
| CN107221579A (en) * | 2017-06-09 | 2017-09-29 | 常州比太科技有限公司 | Solar cell film plating process and solar cell |
| CN107623052A (en) * | 2017-09-01 | 2018-01-23 | 常州比太科技有限公司 | A kind of solar battery sheet passivation Al2O3Coating system and method |
| CN107779826A (en) * | 2017-10-20 | 2018-03-09 | 深圳市生波尔光电技术有限公司 | Arc ion plating film device |
| CN108930026A (en) * | 2017-05-24 | 2018-12-04 | 东京毅力科创株式会社 | Film build method, film formation device and the storage medium of silicon nitride film |
| CN109964303A (en) * | 2016-11-18 | 2019-07-02 | 应用材料公司 | Method for depositing amorphous silicon layer or silicon oxycarbide layer via physical vapor deposition |
| CN109957779A (en) * | 2017-12-14 | 2019-07-02 | 湘潭宏大真空技术股份有限公司 | Electrode continous way magnetron sputtering coating single side production line before thin-film solar cells |
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2006
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