CN101159228B - Processing gas supplying mechanism, supplying method and gas processing unit - Google Patents

Abstract

The present invention relates to a processing gas supply mechanism, a supply method, and a gas processing apparatus capable of supplying a processing gas in an amount to bring the inside of a processing container to a set pressure in a short time. The processing gas supply mechanism (3) includes: a He gas supply source (30) for supplying helium gas as a processing gas into the chamber (2) serving as a processing container for accommodating the substrate (G); the processing gas tank (33) of the helium of the gas supply source (30); The processing gas circulation part (35) in the chamber (2), through which the helium gas is temporarily stored in the processing gas tank (33) from the He gas supply source (30), and from the processing gas tank (33) is fed into the chamber (2).

Description

Processing gas supply mechanism, supply method, and gas processing device

technical field

The present invention relates to a processing gas supply mechanism, a processing gas supply method, and a gas processing apparatus provided with such a processing gas supply mechanism, in accordance with the regulations for a processing object such as a glass substrate for a flat panel display (FPD) accommodated in a processing container. The processing method supplies the processing gas into the processing container.

Background technique

In the FPD manufacturing process, plasma processing such as plasma etching equipment or plasma CVD film formation equipment is used to perform predetermined treatments such as etching treatment and film formation treatment on the glass substrate for FPD as the object to be processed. device. In a plasma processing apparatus, in general, a glass substrate is a processing gas generated by generating a high-frequency electric field while supplying a processing gas into the processing chamber while being placed on a stage in the processing chamber. treated with plasma.

The processing gas is usually supplied into the processing container through a flow channel such as a pipe connected to a processing gas supply source at one end and to the processing container at the other end, while adjusting the flow rate by a flow rate adjustment mechanism such as a mass flow controller ( For example, refer to Patent Document 1).

However, recently, FPDs have been increasing in size, and even huge glass substrates exceeding 2 m on one side have appeared, and the processing chamber has also become larger. Therefore, if the processing gas supply method of the prior art is used, from It takes a long time to start supplying the processing gas until the pressure in the processing container reaches the set pressure, and thus there is a problem that the total processing capacity is lowered.

[Patent Document 1] Japanese Unexamined Patent Publication No. 2002-313898

Contents of the invention

The present invention was made in view of the above circumstances, and an object of the present invention is to provide a processing gas supply mechanism and a processing gas supply method capable of supplying a processing gas at a set pressure in a processing container in a short time, and a processing gas supply mechanism having such a processing gas supply mechanism. A gas processing device, and a computer-readable storage medium storing a control program for implementing the processing gas supply method.

In order to solve the above-mentioned problems, the first aspect of the present invention provides a processing gas supply mechanism, characterized in that the processing gas supply mechanism supplies the processing gas to the processing container so as to perform a predetermined process on the object to be processed accommodated in the processing container. The processing gas is supplied inside, and the processing gas supply mechanism includes: a processing gas supply source for supplying processing gas into the above-mentioned processing container; a processing gas tank for temporarily storing the processing gas from the above-mentioned processing gas supply source; The processing gas from the processing gas supply source is supplied to the processing gas tank, and the processing gas in the processing gas tank is supplied to the processing gas circulation part in the processing container, and the processing gas is temporarily stored in the processing gas supply source from the processing gas supply source. The processing gas tank is supplied from the processing gas tank to the processing container.

In addition, in a second aspect of the present invention, there is provided a gas processing apparatus, characterized by comprising: a processing container for accommodating an object to be processed; a processing gas supply mechanism for supplying processing gas into the processing container; Exhaust unit for exhausting inside, and in the state where the object to be processed is accommodated in the above-mentioned processing container, the exhaust unit is used to exhaust gas, and at the same time, the processing gas is supplied by the above-mentioned processing gas supply mechanism, and the object to be processed is To perform a predetermined process, the processing gas supply mechanism includes: a processing gas supply source for supplying processing gas into the processing container; a processing gas tank for temporarily storing the processing gas from the processing gas supply source; The processing gas from the gas supply source is supplied to the processing gas tank, and the processing gas in the processing gas tank is supplied to the processing gas circulation part in the processing container, and the processing gas is temporarily stored in the processing gas supply source from the processing gas supply source. tank, and is supplied from the processing gas tank to the processing container.

In a second aspect of the present invention, in a preferred embodiment, the processing gas circulation means includes: a first processing gas flow path connected to the processing gas supply source and the processing container; The second processing gas flow path is branched and connected to the processing gas tank, and the processing gas supply mechanism also supplies processing gas from the processing gas supply source into the processing container.

In this case, there is another preferred embodiment. A plurality of the above-mentioned processing gas tanks are provided, and a plurality of the above-mentioned second processing gas flow paths are provided corresponding to the number of the above-mentioned processing gas tanks. The processing gas flow paths respectively have an inlet flow path for sending a processing gas into the processing gas tank; and a delivery flow path for sending a processing gas out of the processing gas tank. In this case, it is also preferable to include a control unit for controlling the processing gas supply mechanism, the control unit controlling to supply the processing gas from a part of the plurality of processing gas tanks into the processing container through the delivery channel, Simultaneously, the processing gas is stored in some or all of the remaining plurality of processing gas tanks from the processing gas supply source through the feeding flow path.

In other words, in this case, there is another preferred embodiment, the above-mentioned second processing gas flow path respectively has an inlet flow path for sending the processing gas into the above-mentioned processing gas tank; The sending flow path sent out from the processing gas tank is provided with a plurality of processing gas supply sources to supply different types of processing gases, and the first processing gas flow path has a number corresponding to the number of processing gas supply sources. Branched into a plurality of supply source connection flow paths connected to the respective processing gas supply sources, the feeding flow path of the second processing gas flow path is connected from the respective supply sources of the first processing gas flow path stream branch. Furthermore, in this case, it is also preferable to include a control unit for controlling the processing gas supply mechanism, and the control unit performs the following control: when the processing gas composed of a predetermined type and ratio is passed from the processing gas tank through the After the flow path is supplied into the processing container, the processing gas composed of the predetermined type and ratio is supplied from part or all of the plurality of processing gas supply sources into the processing container through the first processing gas flow path, and at the same time, A processing gas having a type and/or ratio different from the predetermined type and ratio is stored in the processing gas tank from some or all of the plurality of processing gas supply sources through the feeding flow path.

In addition, in this case, in a preferred embodiment, a plurality of the processing gas tanks are provided, and a plurality of the second processing gas passages are provided corresponding to the number of the processing gas tanks, and each of the second processing gas channels The processing gas flow path respectively has an input flow path for sending the processing gas into the above-mentioned processing gas tank; different types of processing gases are supplied, and the first processing gas flow path has a supply source connection flow path branched into a plurality corresponding to the number of the processing gas supply sources and connected to each of the processing gas supply sources, The supply flow paths of the second processing gas flow paths are branched from the respective supply source connection flow paths of the first processing gas flow paths. Furthermore, in this case, it is also preferable to include a control unit for controlling the processing gas supply mechanism, and the control unit controls to pass the processing gas composed of a predetermined type and ratio through a part of the plurality of processing gas tanks. The delivery flow path supplies the processing gas into the processing container, and the processing gas composed of the predetermined type and ratio is supplied from part or all of the plurality of processing gas supply sources into the processing container through the first processing gas flow path. At the same time, the processing gas composed of a type and/or ratio different from the above-mentioned predetermined type and ratio is stored in the remaining of the plurality of processing gas tanks from a part or all of the plurality of processing gas supply sources through the above-mentioned feeding flow path. part or all of it.

Furthermore, in these cases, each of the first processing gas flow paths may include a storage flow path through which the processing gas from the processing gas supply source is stored in the processing gas tank. ; and a flow path for supplying the processing gas from the processing gas supply source to be circulated when the processing gas is supplied into the processing container.

In addition, in the above second viewpoint of the present invention, there is still a preferred embodiment, the above-mentioned exhaust unit has a plurality of exhaust flow paths connected to the above-mentioned processing container; An exhaust device for exhausting, in this case, a bypass flow path is connected to the above-mentioned processing gas flow part and a part of the plurality of exhaust flow paths, and the processing gas in the above-mentioned processing gas flow part The bypass flow path can be discharged by the exhaust unit, and the exhaust flow path connected to the bypass flow path can be freely opened and closed on an upstream side of a connection portion with the bypass flow path.

In addition, in the above second aspect of the present invention, it is also preferable that a plasma generating mechanism for generating plasma of the processing gas supplied by the processing gas supplying mechanism is further provided in the processing container, and the above-mentioned predetermined processing is Plasma treatment using a plasma of a process gas.

In addition, in a third aspect of the present invention, there is provided a processing gas supply method, characterized in that the processing gas is supplied into the processing container in such a manner that a predetermined process is performed on an object accommodated in the processing container. : a processing gas supply source for supplying processing gas into the above-mentioned processing container; a processing gas tank for temporarily storing the processing gas from the above-mentioned processing gas supply source; and supplying the processing gas from the above-mentioned processing gas supply source to the above-mentioned processing gas tank, and supply the processing gas in the processing gas tank to the processing gas circulation part in the processing container, temporarily store the processing gas in the processing gas tank from the processing gas supply source, and send the processing gas from the processing gas tank to the processing Supplied in container.

In a third viewpoint of the present invention, in a preferred embodiment, a first processing gas flow path connected to the processing gas supply source and the processing container; and branched from the first processing gas flow path and connected to the The second processing gas channel to which the processing gas tank is connected constitutes the processing gas circulation means, and also supplies processing gas from the processing gas supply source into the processing container.

In this case, there is another preferred embodiment, a plurality of the above-mentioned processing gas tanks are provided, and corresponding to the number of the above-mentioned processing gas tanks, a plurality of the above-mentioned second processing gas flow paths are provided, each having a The feeding flow path for sending the processing gas into the above-mentioned processing gas tank; and the sending flow path for sending the processing gas out of the above-mentioned processing gas tank, constituting each of the above-mentioned second processing gas flow paths, from the plurality of processing gas tanks A part of the processing gas is supplied into the processing container through the delivery flow path, and processing gas is stored in the remaining part or all of the plurality of processing gas tanks from the processing gas supply source through the delivery flow path.

Or, in this case, there is another preferred embodiment, which respectively has a feeding flow path for sending the processing gas into the above-mentioned processing gas tank; and a flow path for sending the processing gas out of the above-mentioned processing gas tank. The sending flow path constitutes the second processing gas flow path, and a plurality of the processing gas supply sources are provided to supply different types of processing gases, and the first processing gas flow path is configured to have a connection with the processing gas supply source. Correspondingly branched into a plurality of supply source connecting flow paths connected to the respective processing gas supply sources, connecting the feeding flow path of the second processing gas flow path from the respective supply flow paths of the first processing gas flow path The supply source is connected to a channel branch, and after the process gas of a predetermined type and proportion is supplied from the process gas tank to the process container through the delivery channel, part or all of the plurality of process gas supply sources is passed through the first process. The gas flow path supplies the processing gas composed of the above-mentioned predetermined types and proportions into the above-mentioned processing container, and at the same time, a part or all of the plurality of processing gas supply sources is stored in the above-mentioned processing gas tank through the above-mentioned feeding flow path. Processing gases of different types and/or ratios from the above-mentioned predetermined types and ratios.

In addition, in this case, there is another preferred embodiment. A plurality of the above-mentioned processing gas tanks are provided, and a plurality of the above-mentioned second processing gas flow paths are provided corresponding to the number of the above-mentioned processing gas tanks, each having a Each of the above-mentioned second processing gas flow paths is composed of a flow path for sending a processing gas into the processing gas tank; and a sending flow path for sending the processing gas out of the processing gas tank, and a plurality of the processing gas flow paths are provided. The supply source is used to supply different kinds of processing gases, and the above-mentioned first processing gas flow path is configured to have a plurality of branches corresponding to the number of the above-mentioned processing gas supply sources and connected to each of the above-mentioned processing gas supply sources. A supply source connection flow path is branched from the supply source connection flow path of the second processing gas flow path to each of the supply source connection flow paths of the first processing gas flow path, and passes through the delivery flow path from a part of the plurality of processing gas tanks. The flow path supplies a processing gas composed of a predetermined type and ratio into the processing container, and supplies a portion or all of the plurality of processing gas supply sources into the processing container through the first processing gas flow path. At the same time, part or all of the above-mentioned multiple processing gas supply sources are stored in the remaining part or all of the above-mentioned multiple processing gas tanks through the above-mentioned feeding flow channel. The type and/or proportion composition of the process gas.

Moreover, in the fourth aspect of the present invention, there is provided a computer-readable storage medium, which is characterized in that it stores a control program running on a computer, and the control program is executed according to the process gas supply process described above. The method is in the form of a computer controlling the processing means.

According to the present invention, since the processing gas is temporarily stored in the processing gas tank from the processing gas supply source through the processing gas flow member, and then supplied into the processing container from the processing gas tank, it is possible to supply the processing gas in a short time so that the inside of the processing container becomes a device. The amount of process gas at a constant pressure. Therefore, the processing time of the object to be processed can be shortened.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a plasma etching apparatus according to an embodiment of a gas processing apparatus according to the present invention.

2 is a schematic cross-sectional view of a plasma etching apparatus used to measure the filling time of the processing gas and the stabilization time when the processing gas is supplied.

3 is a graph showing the measurement results of the filling time of the processing gas and the stabilization time when the processing gas is supplied.

4 is a schematic cross-sectional view of a plasma etching device according to another embodiment of the gas processing device according to the present invention.

5 is a modified example of a supply source connection flow path of a process gas supply mechanism provided in a plasma etching apparatus.

Symbol Description

1, 1`: Plasma etching device (gas processing device)

2: Chamber (processing container)

3, 3`: Processing gas supply mechanism

4: exhaust unit

5: Plasma generation mechanism

41: exhaust pipe (exhaust flow path)

42: exhaust device

30: He gas supply source (processing gas supply source)

31: HCl gas supply source (processing gas supply source)

32: SF ₆ gas supply source (processing gas supply source)

33, 34: Processing gas tank (tank)

35: Handling Gas Flow Components

36: First process gas flow path

36a, 36b, 36c: supply source connection flow path

36j, 36k, 36l: flow paths for storage

36m, 36n, 36o: Flow path for supply

37, 37`, 38, 38`: the second process gas flow path

37a, 37a`, 38a, 38a`: sending flow path

37b, 38b: delivery flow path

39, 39`: bypass flow path

90: Process controller

91: User interface

92: Storage Department

93: Unit controller (control department)

G: glass substrate (object to be processed)

Detailed ways

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a schematic cross-sectional view of a plasma etching apparatus as one embodiment of a processing apparatus according to the present invention.

This plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus for etching a glass substrate for FPD (hereinafter referred to simply as “substrate”) G as an object to be processed. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 includes: a chamber 2 as a processing container for accommodating a substrate G, a processing gas supply mechanism 3 for supplying a processing gas into the chamber 2, an exhaust unit 4 for exhausting the chamber 2, and a generator. The processing gas supply mechanism 3 supplies the plasma generation mechanism 5 of the processing gas plasma in the chamber 2 .

The chamber 2 is made of, for example, aluminum whose surface is alumite-treated (anodized), and has a rectangular cylindrical shape corresponding to the shape of the substrate G. As shown in FIG. A susceptor 20 as a mounting table on which the substrate G is mounted is provided on the bottom wall in the chamber 2 . The base 20 is formed into a quadrangular plate shape or a column shape corresponding to the shape of the substrate G, and has a base 20a made of a conductive material such as metal; an insulating member 20b made of an insulating material covering the periphery of the base 20a; The insulating member 20c is provided in such a manner as to form the bottom of the insulating member 20b and is made of an insulating material supporting them. The base 20a incorporates an electrostatic adsorption mechanism for adsorbing the mounted substrate G, and a temperature adjustment mechanism including a cooling unit such as a refrigerant flow path for adjusting the temperature of the mounted substrate G. (Not shown in the figure).

A loading/unloading port 21 for loading and unloading the substrate G is formed on a side wall of the chamber 2 , and a gate valve 22 for opening and closing the loading/unloading port 21 is provided. When the loading and unloading port 21 is opened, the substrate G is loaded and unloaded into and out of the chamber 2 by a transport mechanism (not shown).

On the bottom wall of the chamber 2 and the base 20 , for example, a plurality of insertion holes 23 passing through them are formed at intervals at positions around the base 20 . Lift pins 24 for supporting and lifting the substrate G from below are inserted into each through hole 23 so as to protrude and sink relative to the substrate mounting surface of the susceptor 20 . A flange portion 25 is formed on the lower portion of each lift pin 24, and one end portion (lower end portion) of a telescopic corrugated tube 26 arranged so as to surround the lift pin 24 is connected to each flange portion 25. The other end (upper end) of the corrugated tube 26 is connected to the bottom wall of the chamber 2 . In this way, the corrugated tube 26 expands and contracts as the lift pin 24 moves up and down, and seals the gap between the insertion hole 23 and the lift pin 24 .

On the upper part or the upper wall of the chamber 2, a shower head that discharges the processing gas supplied by the processing gas supply mechanism 3 described later into the chamber 2 and functions as an upper electrode is provided so as to face the susceptor 20. 27. The shower head 27 is grounded, and a gas diffusion space 28 for diffusing the processing gas inside is formed, and a plurality of nozzles for spouting the processing gas diffused in the gas diffusion space 28 are formed on the lower surface or the surface opposite to the susceptor 20 . Spit hole 29 .

The exhaust unit 4 includes: an exhaust pipe 41 as an exhaust flow path connected to, for example, the bottom wall of the chamber 2; an exhaust device 42 ; and a pressure regulating valve 43 for adjusting the pressure in the chamber 2 , which is provided on the upstream side of the exhaust pipe 41 rather than the connection portion with the exhaust device 42 . The exhaust device 42 is configured to include a vacuum pump such as a turbomolecular pump, whereby the inside of the chamber 2 can be evacuated to a predetermined reduced pressure atmosphere. A plurality of exhaust pipes 41 are provided at intervals in the circumferential direction of the chamber 2 , and a plurality of exhaust devices 42 and pressure adjustment valves 43 are provided corresponding to the respective exhaust pipes 41 .

The plasma generating mechanism 5 includes a power supply line 51 connected to the base 20 a of the susceptor 20 for supplying high-frequency power; and a matching unit 52 and a high-frequency power supply 53 connected to the power supply line 51 . High-frequency power of, for example, 13.56 MHz is supplied to the susceptor 20 from the high-frequency power supply 53 , so that the susceptor 20 functions as a lower electrode and forms a pair of parallel plate electrodes together with the shower head 27 . Susceptor 20 and shower head 27 constitute a part of plasma generation mechanism 5 .

The processing gas supply mechanism 3 includes: a processing gas supply source for supplying processing gas, such as He gas, HCl gas, and SF gas into the chamber 2, such as a He gas supply source ₃₀ , an HCl gas supply source 31, and _SF gas. Supply source 32; A plurality of, for example, two processing gas tanks 33, 34 for temporarily storing or filling processing gases from He gas supply source 30, HCl gas supply source 31, and SF ₆ gas supply source 32; and processing gas circulation means 35, the processing gas circulation part includes supplying the processing gas from the He gas supply source 30, the HCl gas supply source 31 and the SF ₆ gas supply source 32 to the processing gas tanks 33, 34 and the chamber 2, and will be stored in The processing gas contained in the processing gas tanks 33 and 34 is supplied to piping and the like in the chamber 2 . The processing gas circulation part 35 includes: the first processing gas flow channel 36 connected with the He gas supply source 30, the HCl gas supply source 31 and the SF ₆ gas supply source 32 and the chamber 2; 34 are respectively branched from the first processing gas flow path 36 and connected to the second processing gas flow paths 37 , 38 connected to the processing gas tanks 33 , 34 .

The first processing gas flow path 36 is branched in a manner corresponding to three processing gas supply sources (He gas supply source 30, HCl gas supply source 31, and SF ₆ gas supply source 32) on one side or the upstream side. Three supply source connection channels 36 a , 36 b , and 36 c are connected to respective processing gas supply sources, and the other or downstream end is connected to the upper surface of shower head 27 so as to communicate with gas diffusion space 28 . In the first processing gas flow path 36, mass flow controllers 36d, 36e, 36f and valves 36g, 36h, 36i for adjusting the flow rate of the processing gas are respectively provided in the supply source connection flow paths 36a, 36b, 36c. Valves 36 s , 36 t are also provided on, for example, one end and the other end on the other side than the branching portion of the second process gas flow path 37 , 38 .

The second processing gas flow paths 37 and 38 branch from the supply source connection flow paths 36 a , 36 b , and 36 c of the first processing gas flow path 36 respectively on the downstream side, and communicate with the gas diffusion space 28 . The upper surface of the shower head 27 is connected, and the processing gas tanks 33 and 34 are connected in the middle part. In this way, the second processing gas flow paths 37, 38 respectively have: feeding flow paths 37a, 38a for feeding processing gas into the processing gas tanks 33, 34; The delivery channels 37b, 38b. Valves 37c, 38c and valves 37d, 38d are respectively provided in the sending flow paths 37a, 38a and the sending flow paths 37b, 38b, and pressure gauges 33a, 34a for measuring the internal pressure are respectively installed on the processing gas tanks 33, 34. .

A bypass channel 39 such as a pipe is connected to the processing gas flow part 35, for example, a part of the first processing gas flow path 36 and a plurality of exhaust pipes 41, so that the processing gas in the processing gas flow part 35 can be It is exhausted by the exhaust unit 4 through the bypass flow path 39 . The bypass flow path 39 is configured to be connected between the pressure regulating valve 43 of the exhaust pipe 41 and the exhaust device 42. By closing the pressure regulating valve 43, the process gas discharged from the bypass flow path 39 can be prevented from It flows into the chamber 2 through the exhaust pipe 41 .

Each component of the plasma etching apparatus 1 is controlled by a process controller 90 having a microprocessor (computer). A user interface 91 is connected to the process controller 90. The user interface consists of a keyboard for the process manager to perform command input operations for managing the plasma etching apparatus 1, and a keyboard for visually displaying the operation status of the plasma etching apparatus 1. a display and the like; and a storage unit 92 that stores a plan for recording control programs and processing condition data for realizing the processing performed in the plasma etching apparatus 1 under the control of the process controller 90 . According to the instruction from the user interface 91, etc., according to the instructions from the user interface 91, any scheme is called from the storage unit 92 and made to run in the process controller 90, so that it can be implemented in the plasma etching device under the control of the process controller 90. 1 processing. The recipe can be stored in a computer-readable storage medium such as CD-ROM, hard disk, or flash memory, or can be transmitted from other devices at any time, such as via a dedicated line, for use.

More specifically, the valves 36g, 36h, 36i, 36s, 36t, 37c, 37d, 38c, 38d, and 39a of the process gas supply mechanism 3 are configured to be controlled by the unit controller 93 connected to the process controller 90. Ministry) controlled. According to an instruction from the user interface 91 or the like, the process controller 90 retrieves an arbitrary recipe from the storage unit 92 and controls it by the unit controller 93 as needed.

In the plasma etching apparatus 1 configured as described above, the inside of the chamber 2 is maintained at a predetermined vacuum degree by the exhaust unit 4, and when this state is maintained, first, the loading and unloading port is opened by the gate valve 22. 21 is opened, the substrate G is carried in from the opened loading and unloading port 21 by a conveying mechanism not shown, and then each lift pin 24 is raised, and the substrate G is received and supported by each lift pin 24 from the conveying mechanism. substrate. After the conveying mechanism exits from the loading and unloading port 21 to the outside of the chamber 2, the loading and unloading port 21 is closed by the gate valve 22, and the lift pins 24 are lowered to sink into the substrate mounting surface of the susceptor 20, so that the substrate G is placed on the substrate. on the base 20.

Next, a processing gas is supplied into the chamber 2 by the processing gas supply mechanism 3 . The supply of the processing gas here is by opening the valve 37d, releasing the He gas, the HCl gas and the _SF gas which are previously filled in the processing gas tank 33 from the He gas supply source 30, the HCl gas supply source 31 and the SF gas supply source 32. ₆ gas is carried out.

Since the inside of the chamber 2 is evacuated by the exhaust unit 4 , if only the processing gas filled in the processing gas tank 33 is supplied, the pressure inside the chamber 2 will decrease after a certain period of time. Therefore, when supplying the processing gas filled in the processing gas tank 33 or immediately after the supply, the valves 36s, 36t, 36g, 36h, 36i are opened, and the gas supply from He is adjusted by the mass flow controllers 36d, 36e, 36f. source 30, HCl gas supply source 31 and SF ₆ gas supply source 32 He gas, HCl gas and the flow rate of SF ₆ gas, and supply in the chamber 2, meanwhile, utilize the pressure control valve 43 to keep the chamber 2 at Set the pressure, for example 23.3Pa (0.175Torr). In this way, the set pressure in the chamber 2 can be quickly maintained. In addition, the processing gas circulation part 35 includes a first processing gas flow path 36 connecting the He gas supply source 30, the HCl gas supply source 31, the SF ₆ gas supply source 32 and the chamber 2; Branched and connected to the second processing gas flow paths 37, 38 of the processing gas tanks 33, 34, respectively, so the helium gas, the helium gas from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32 are not used. Hydrogen chloride gas and SF ₆ gas can be supplied in the chamber 2 in a short time by the processing gas tanks 33, 34 as relatively large spaces through the first processing gas flow path 36, like this, just can realize in the chamber 2. Further rapidity of pressure maintenance.

In this state, a DC voltage is applied to the electrostatic adsorption mechanism built in the susceptor 20 so that the substrate G is adsorbed on the susceptor 20, and at the same time, the temperature of the substrate G is adjusted by the temperature adjustment mechanism built in the susceptor 20. temperature. High-frequency power is applied to the susceptor 20 from the high-frequency power supply 53 through the matching device 52, and a high-frequency electric field is generated between the susceptor 20 as the lower electrode and the shower head 27 as the upper electrode, and the processing gas in the chamber 2 is plasma Integrate. The substrate G is etched using the plasma of the processing gas.

After performing the etching process on the substrate G, the application of high-frequency power from the high-frequency power supply 53 is stopped. Next, close the valves 36g, 36h, 36i and stop supplying helium gas, hydrogen chloride gas, and SF gas from the He gas supply source 30, the _HCl gas supply source 31, and the SF gas supply source ₃₂ , and at the same time, use the exhaust unit 4 to discharge The processing gas in the chamber 2 and in the first processing gas channel 36 or the processing gas flow member 35 . Release the adsorption of the electrostatic adsorption mechanism to the substrate G, and then supply the processing gas into the chamber 2 and keep the chamber 2 at a set pressure, for example, 26.7Pa (0.2Torr), and then apply the gas to the susceptor 20. High-frequency power is used to turn the processing gas into plasma, and a static elimination process is performed on the substrate G. The supply of the processing gas here is carried out by opening the valve 38d to discharge the helium gas previously filled in the processing gas tank 34 from the He gas supply source 30, and opening the valves 36s, 36t, and 36g according to the chamber The flow rate of the helium gas from the He gas supply source 30 is adjusted and sent out by the mass flow controller 36d so that the inside of the chamber 2 is kept at the set pressure. In this way, not only can the pressure in the chamber 2 be kept at the set pressure or close to the set pressure instantaneously, but also the static elimination treatment of the substrate G can be performed quickly.

Once the destaticization process of the substrate G is performed, the process gas in the chamber 2 and the first process gas channel 36 or the process gas flow member 35 is exhausted through the exhaust unit 4 . Next, the loading/unloading port 21 is opened using the gate valve 22 , and the lift pin 24 is raised to separate the substrate G upward from the susceptor 20 . After that, after the transport mechanism (not shown) enters the chamber 2 through the loading and unloading port 21, the lift pins 24 are lowered to transfer the substrate G to the transport mechanism. Thereafter, the substrate G is carried out from the loading/unloading port 21 to the outside of the chamber 2 by the transfer mechanism.

Refilling of the processing gas tanks 33 and 34 with the processing gas is performed when the substrate G is loaded and unloaded. First, the valve 37c is opened to fill the processing gas tank 33 with processing gas. At this time, in order to prevent the processing gas from flowing into the processing gas tank 34 and the chamber 2, the valves 37d, 38c, and 36s are closed in advance. After filling the processing gas tank 33 with processing gas, the valve 37c is closed, and the valve 39a is opened to discharge the processing gas remaining in the first processing gas channel 36 and the supply channels 37a and 38a. At this time, the pressure regulating valve 43 of the exhaust pipe 41 connected to the bypass channel 39 is closed in advance so that the processing gas does not flow into the chamber 2 . After the processing gas is exhausted, the processing gas tank 34 is filled with the processing gas in the same way as the processing gas tank 33 is filled, and after the filling is completed, the processing remaining in the first processing gas flow path 36 and the feeding flow paths 37a and 38a is similarly performed. Exhaust of gas. In addition, filling of the processing gas to the processing gas tank 34 may be performed first.

In the present embodiment, the processing gas tanks 33 and 34 are temporarily filled with processing gas from a processing gas supply source, such as a He gas supply source 30, an HCl gas supply source 31, and _{an SF} gas supply source 32, through the processing gas circulation member 35. Processing gases, such as helium gas, hydrogen chloride gas, and SF ₆ gas, will be filled in the processing gas tanks 33, 34 to supply the chamber 2 and perform processing including plasma etching of the substrate G, so even if the chamber 2 has a large capacity, and it is also possible to supply the processing gas that makes the inside of the chamber 2 into a set pressure in a short time, so that the processing time can be shortened.

In addition, in this embodiment, the processing gas tank 33 is used for filling the processing gas supplied during the plasma etching process, and the processing gas tank 34 is used for filling the processing gas supplied after the plasma etching process, and these can be used instead. In addition, in the present embodiment, the second processing gas flow paths 37 and 38 are branched from the first processing gas flow path 36 respectively, but they may be connected from the first processing gas flow path in a state where one ends thereof are merged. The gas flow path 36 is branched and provided. Alternatively, the second processing gas flow paths 37 and 38 may not be connected to the top of the shower head 27, but to other parts of the chamber 2 such as side walls, so that the processing gas is supplied to the chamber 2 without passing through the shower head 27. . In addition, in this embodiment, the delivery flow paths 37 b and 38 b of the second processing gas flow paths 37 and 38 are respectively connected to the chamber 2 , but they may also be connected to the first processing gas flow path 36 . In this embodiment, two processing gas tanks 33 and 34 are used to continuously perform two types of processing using different processing gases, but only one processing gas tank may be used when only one type of processing is performed. , In the case where three or more processes are performed continuously, three or more process gas tanks may be used.

Next, using the plasma etching apparatus 1, the time for filling the processing gas tank 33 at a predetermined pressure (hereinafter referred to as filling time), and the amount of time for the processing gas to be filled in the processing gas tank 33 and the time from the process were measured. The processing gas from the gas supply sources 30 , 31 , and 32 is supplied into the chamber 2 until the pressure in the chamber 2 stabilizes at about the set pressure (hereinafter referred to as stabilization time). As shown in FIG. 2 , the plasma etching apparatus 1 here uses an example in which the second processing gas passages 37 and 38 of the processing gas supply mechanism 3 are modified into a simplified structure. Here, the second processing gas flow paths 37 and 38 are respectively branched from the first processing gas flow path 36 at one end and connected to the processing gas tanks 33 and 34 at the other ends, and valves 37z and 38z are provided in the middle. . Therefore, the second processing gas flow paths 37, 38 here also serve as flow paths for introducing the processing gas from the processing gas supply sources 30, 31, 32 into the processing gas tanks 33, 34; The processing gas in the gas tanks 33 and 34 is introduced into the flow path in the chamber 2 .

Set the flow ratio of helium, hydrogen chloride gas and _SF gas as processing gas to be 2:1:1, the total flow rate is 5slm, the capacity _l0 of chamber 2 is 23101, and the capacity _l1 of processing gas tank 33 is 3l , the set pressure _P0 in the chamber 2 is 23.3Pa (0.175Torr), and the following cases are measured respectively, the pressure _P1 of the processing gas filled in the processing gas tank 33 is 26.7kPa (200Torr) (Example 1); the case of 53.3 kPa (400 Torr) (Example 2); and the case of 80.0 kPa (600 Torr) (Example 3). In addition, as a comparative example, the stabilization time was measured when only the processing gas from the processing gas supply sources 30 , 31 , and 32 was supplied into the chamber 2 without using the processing gas tank 33 . The measurement results are shown in Table 1.

Table 1

Fill time(sec) Stabilization time (sec) Example 1 2 14 Example 2 5 10 Example 3 10 7 comparative example 15

As shown in Table 1, it was confirmed that in Examples 1, 2, and 3, the stabilization time was shorter than that of the comparative example. That is, it was confirmed that by using the plasma etching apparatus 1 , the stabilization time can be shortened compared to the case of the conventional plasma etching apparatus not using the process gas tank 33 .

In addition, it was confirmed that the lower the pressure of the processing gas filled in the processing gas tank 33, the shorter the filling time, but the higher the pressure of the processing gas filled in the processing gas tank 33, the shorter the stabilization time, and the pressure The case where the pressure is 80.0 kPa is about half that of the case where the pressure is 26.7 kPa. This is also because, if the pressure of the processing gas filled in the processing gas tank 33 is low, the processing gas supplied to the chamber 2 from the processing gas supply sources 30 , 31 , and 32 passes through the second processing gas flow path 37 . It flows into the processing gas tank 33 . Therefore, by measuring the pressure change in the processing gas circulation member 35 before and after the processing gas supply from the processing gas tank 33 into the chamber 2 is started, the following results are obtained: In terms of the pressure in the subsequent processing gas circulation part 35, as shown by the arrow portion in _FIG . The pressure in the processing gas circulation part 35 is 29.9 kPa (224 Torr), as shown by the arrow part in _FIG . 135 Torr), the pressure in the processing gas circulation part 35 is smaller than that at the time of stabilization, as shown by the arrow parts in _FIG . Even higher, for example, 53.3 kPa, is higher than the pressure inside the process gas flow member 35 at a steady state. In addition, when the pressure _P1 of the processing gas filled in the processing gas tank 33 is 17.9 kPa, the stabilization time is as much as 2 seconds longer than in the case of 26.7 kPa. When the processing gas tank 33 is used and only the processing gas from the processing gas supply sources 30 , 31 , and 32 is supplied into the chamber 2 , the stabilization time is longer. Therefore, the second processing gas flow path 37 (38) also serves as a flow path for sending the processing gas into the processing gas tank 33 (34) and as a flow path for sending the processing gas out of the processing gas tank 33 (34). In the case of a flow path, if the pressure of the processing gas filled in the processing gas tank 33 is higher than the pressure in the processing gas flow member 35, not only can the processing gas be prevented from flowing into the processing gas tanks 33, 34, but also , the higher the pressure of the processing gas filled in the processing gas tank 33 is, the more the stabilization time can be shortened.

Next, other embodiments of the plasma etching apparatus will be described.

4 is a schematic cross-sectional view of a plasma etching apparatus as another embodiment of the gas processing apparatus according to the present invention.

As shown in FIG. 4 , the plasma etching apparatus 1 ′ is a process gas supply mechanism 3 in the plasma etching apparatus 1. In the modified example, the same reference numerals are assigned to the same parts as those of the plasma etching apparatus 1, and description thereof will be omitted. The feeding flow path 37a' (38a') of the second processing gas flow path 37' (38') of the processing gas supply mechanism 3' in the plasma etching apparatus 1' to the processing gas tank 33 (34) includes: Sending flow paths 37e, 37f, 37g (38e, 38f, 38g), these branch sending flow paths are branched from one end or the upstream side end from the introduction branch flow path 37i, 37j, 37k, and these introduction flow paths The branch flow path is provided in such a way that it branches from the upstream side of the supply source connection flow path 36a, 36b, 36c to the upstream side of the mass flow controller 36d, 36e, 36f; and the branch feed flow path 37e, 37f, The other ends or the downstream ends of 37g (38e, 38f, 38g) merge with each other and are connected to the merged flow path 37h (38h) connected to the process gas tank 33 (34). Mass flow controllers 37l, 37m, 37n are respectively provided in the introduction branch flow paths 37i, 37j, 37k, and valves 37o, 37p, 37p, 37p, 37q, 38o, 38p, 38q.

One side or the upstream side of the bypass flow path 39' in the processing gas supply mechanism 3' is branched and connected to the merged flow path 37h, 38h, respectively, and valves 39b, 39c are provided on each branch.

In the processing gas supply mechanism 3' configured in this way, helium is supplied into the chamber 2 from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32 via the first processing gas circulation member 35. gas, hydrogen chloride gas, and SF ₆ gas, and at the same time, from He gas supply source 30, HCl gas supply source 31 and SF ₆ gas supply source 32 to the process gas tank via the second process gas flow channel 37'(38') 33 (34) fill helium gas, hydrogen chloride gas and SF ₆ gas, and can pass through each mass flow controller 36d, 36e, 36f, 37l, 37m, 37n and each valve 36g, 36h, 36i, 37o (38o), 37p (38p), 37q (38q) to adjust respectively the flow rate of the helium gas supplied to the chamber 2, the flow rate of the hydrogen chloride gas, the flow rate of the _SF gas, the flow rate of the helium gas sent to the processing gas tank 33 (34), The flow rate of hydrogen chloride gas and the flow rate of SF ₆ gas. In addition, by branching the bypass flow path 39' and connecting it to the merged feeding flow paths 37h and 38h, respectively, the processing gas and the gas in the second processing gas flow path 37' including the merged feeding flow path 37h can be discharged separately. The processing gas included in the second processing gas flow path 38' that is confluently sent into the flow path 38h. Therefore, the processing gas composed of a predetermined type and ratio filled in the processing gas tank 33 (34) in advance, and the processing gas composed of a predetermined type and ratio from the processing gas supply sources 30, 31, 32 are supplied to the chamber. 2, a certain processing is performed, because at the same time, the processing gas used in the next processing can be filled in the processing gas tank 34 (33) by a different type and/or ratio from the specified type and ratio. , Therefore, three or more types of processing different in the type and ratio of the processing gas to be used can be continuously performed.

Furthermore, in the present embodiment, the branch supply flow paths 37e, 38e, 37f, 38f, 37g, and 38g are branched from the supply source connection flow paths 36a, 36b, and 36c via the introduction branch flow paths 37i, 37j, and 37k. , may directly branch from the supply source connecting flow paths 36a, 36b, 36c without passing through the introduction branch flow paths 37i, 37j, 37k. In this case, mass flow controllers can be provided in each of the branch feeding channels 37e, 38e, 37f, 38f, 37g, and 38g.

FIG. 5 shows a modified example of the supply source connection flow path of the processing gas supply mechanism 3 provided in the plasma etching apparatus 1 .

In order to fill the processing gas tanks 33, 34 with processing gas from the processing gas supply sources 30, 31, 32 in a short time, it is preferable to use parts that can apply a large flow rate to configure the supply source connecting channels 36a, 36b, 36c. mass flow controllers and valves to supply processing gas to the processing gas tanks 33 and 34 at a large flow rate. However, in order to improve the processing quality of the substrate G, the flow rate of the processing gas supplied from the processing gas supply source 30, 31, 32 to the chamber 2 must be finely adjusted. If a mass flow controller is applicable to a large flow rate, fine adjustment of the flow rate cannot be performed, and the processing quality of the substrate G may be deteriorated. Therefore, as shown in FIG. 5 , in each supply source connection channel 36 a , 36 b , 36 c , it is branched so that the processing gas from the processing gas supply source 30 , 31 , 32 is stored or filled in the processing gas tank 33 , 34 The storage flow paths 36j, 36k, 36l are used to circulate during the middle; and the supply flow paths 36m, 36n, 36o, to set up, in the storage flow paths 36j, 36k, 36l, respectively set a mass flow controller 36p and a valve 36q that can be applied to a large flow rate, and in the supply flow paths 36m, 36n, 36o, respectively set a For example, mass flow controller 36r and valve 36s for small flow. By employing such a configuration, it is possible to finely adjust the flow rate of the processing gas supplied into the chamber 2 while filling the processing gas tanks 33 and 34 with the processing gas in a short time.

As mentioned above, the best embodiment of this invention was described, However, this invention is not limited to the said embodiment, Various changes are possible. In the above-mentioned embodiments, an example of application to an RIE-type capacitively coupled parallel-plate plasma etching apparatus that applies high-frequency power to the lower electrode has been described. , CVD film formation, and other plasma processing apparatuses, and can also be applied to general gas apparatuses other than plasma processing apparatuses that house a substrate such as a substrate in a processing container and perform gas processing. In addition, in the above-mentioned embodiments, an example of application to the processing of glass substrates for FPDs has been described, but the present invention is not limited to this, and it can be applied to general substrate processing such as semiconductor substrates, and can also be applied to substrates. Other than the processed objects are being processed.

Claims (14)

1. handle gas supply mechanism for one kind, it is characterized in that,

It handles gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in said container handling, this processing gas supply mechanism comprises:

Be used in said container handling, supplying with the processing gas supply source of handling gas;

Be used for temporary transient processing gas tank of storing from the processing gas of said processing gas supply source; With

To supply with said processing gas tank from the processing gas of said processing gas supply source, and the processing gas in the said processing gas tank will be supplied with the processing gas communication parts in the said container handling,

Handle gas and temporarily be stored in the said processing gas tank, and in said container handling, supply with from said processing gas tank from said processing gas supply source,

Said processing gas communication parts comprise: the first processing gas flow path that is being connected with said processing gas supply source and said container handling; And from said first handle gas flow path branch and be connected with said processing gas tank second handle gas flow path,

Said processing gas supply mechanism is also supplied with in said container handling from said processing gas supply source and is handled gas,

Said processing gas tank is provided with a plurality of, and, it is corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,

Each said second processing gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream off from what said processing gas tank was seen off with handling gas.

2. a gas treatment equipment is characterized in that, comprising:

Accommodate the container handling of handled object;

In said container handling, supply with the processing gas supply mechanism of handling gas; And

To carrying out the exhaust unit of exhaust in the said container handling, and,

Under the state that handled object is housed in the said container handling, utilize said exhaust unit to carry out exhaust, utilize said processing gas supply mechanism to supply with simultaneously and handle gas, handled object is implemented predetermined processing,

Said processing gas supply mechanism comprises:

Be used in said container handling, supplying with the processing gas supply source of handling gas;

Be used for temporary transient processing gas tank of storing from the processing gas of said processing gas supply source; With

To supply with said processing gas tank from the processing gas of said processing gas supply source, and the processing gas in the said processing gas tank will be supplied with the processing gas communication parts in the said container handling,

Handle gas and temporarily be stored in the said processing gas tank, and in said container handling, supply with from said processing gas tank from said processing gas supply source,

Said processing gas communication parts comprise: the first processing gas flow path that is being connected with said processing gas supply source and said container handling; And from said first handle gas flow path branch and be connected with said processing gas tank second handle gas flow path,

Said processing gas supply mechanism is also supplied with in said container handling from said processing gas supply source and is handled gas,

Said processing gas tank is provided with a plurality of, and, it is corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,

Each said second processing gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream off from what said processing gas tank was seen off with handling gas.

3. gas treatment equipment according to claim 2 is characterized in that,

Comprise the control part of controlling said processing gas supply mechanism,

Said control part is controlled as follows: make and handle gas and supply with in said container handling through the said stream of seeing off from the part of said a plurality of processing gas tank, make simultaneously handle gas from said processing gas supply source through said send into stream be stored in the remaining part of said a plurality of processing gas tank or all.

4. gas treatment equipment according to claim 2 is characterized in that,

Said second handles gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream with handling gas off from what said processing gas tank was seen off,

Be provided with a plurality of said processing gas supply sources to supply with different multiple processing gas; And; Said first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the said body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of said processing gas supply source and connects stream

Said second handle gas flow path said send into stream be from said first handle gas flow path said each supply source connect stream branch.

5. gas treatment equipment according to claim 4 is characterized in that,

Comprise the control part of controlling said processing gas supply mechanism,

Said control part is controlled as follows: the processing gas be made up of regulation kind and ratio is seen off after stream supplies with in said container handling through said from said processing gas tank; Make the processing gas formed by said regulation kind and ratio from the part of said a plurality of processing gas supply sources or all handle gas flow path and in said container handling, supply with through said first; Meanwhile; Make the processing gas of forming by the kind different and/or ratio, be stored in the said processing gas tank through the said stream of sending into from part or all of said a plurality of processing gas supply sources with said regulation kind and ratio.

6. gas treatment equipment according to claim 2 is characterized in that,

Be provided with a plurality of said processing gas tank, and, it is corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,

Said each second processing gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream with handling gas off from what said processing gas tank was seen off,

Be provided with a plurality of said processing gas supply sources to supply with different multiple processing gas; And; Said first handles gas flow path has and is branched off into supply source a plurality of and that be connected with the said body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of said processing gas supply source and connects stream

Said each second handle gas flow path said send into stream be from said first handle gas flow path said each supply source connect stream branch.

7. gas treatment equipment according to claim 6 is characterized in that,

Comprise the control part of controlling said processing gas supply mechanism,

Said control part is controlled as follows: the processing gas of being made up of regulation kind and ratio is supplied with in said container handling through the said stream of seeing off from the part of said a plurality of processing gas tank; And make the processing gas formed by said regulation kind and ratio from the part of said a plurality of processing gas supply sources or all handle gas flow path and in said container handling, supply with through said first; Meanwhile; Make the processing gas of forming by the kind different and/or ratio, send into stream to be stored in said a plurality of processing gas tank remaining part or all through said from part or all of said a plurality of processing gas supply sources with said regulation kind and ratio.

8. according to each described gas treatment equipment in the claim 2～7, it is characterized in that,

Said first handles gas flow path has respectively: when making processing gas from said processing gas supply source be stored in the said processing gas tank and make the storage of its circulation use stream; And when will supplying with in the said container handling and make the supply of its circulation use stream from the processing gas of said processing gas supply source.

9. according to each described gas treatment equipment in the claim 2～7, it is characterized in that,

Said exhaust unit has the exhaust flow path that a plurality of and said container handling is being connected; And through said exhaust flow path to carrying out the exhaust apparatus of exhaust in the said container handling,

On the part in said processing gas communication parts and the said a plurality of exhaust flow paths, be connected bypass flow path, the processing gas that constitutes in the said processing gas communication parts can be by said exhaust unit discharge through said bypass flow path,

The said exhaust flow path that is connecting said bypass flow path also leans on the upstream side at the upper reaches to open and close freely at the connecting portion than itself and said bypass flow path.

10. according to each described gas treatment equipment in the claim 2～7, it is characterized in that,

In said container handling, also possess plasma and generate mechanism, it generates the plasma of the processing gas of being supplied with by said processing gas supply mechanism,

Said predetermined process is being to use the Cement Composite Treated by Plasma of the plasma of handling gas.

11. handle the gas supply method for one kind, it is characterized in that,

It handles gas according to the mode that is housed in the handled object enforcement predetermined processing in the container handling is supplied with in said container handling, prepare:

Be used in said container handling, supplying with the processing gas supply source of handling gas;

Be used for temporary transient a plurality of processing gas tank of storing from the processing gas of said processing gas supply source; With

To supply with said processing gas tank from the processing gas of said processing gas supply source; And the processing gas in the said processing gas tank supplied with the processing gas communication parts in the said container handling; To handle gas temporarily is stored in the said processing gas tank from said processing gas supply source; And in said container handling, supply with from said processing gas tank

In advance by the first processing gas flow path that is being connected with said processing gas supply source and said container handling; And from said first handle gas flow path branch and be connected with said processing gas tank second handle gas flow path and constitute said processing gas communication parts,

Prepare a plurality of said second accordingly with the quantity of said processing gas tank and handle gas flow path, each said second processing gas flow path has the stream of sending into that is used for processing gas is sent into said processing gas tank respectively; And be used for seeing stream with handling gas off from what said processing gas tank was seen off,

Also in said container handling, supply with and handle gas from said processing gas supply source.

12. processing gas supply method according to claim 11 is characterized in that,

A plurality of said processing gas tank are set, and corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,

Have respectively and be used for sending handling gas into the stream of sending into of said processing gas tank; And be used for seeing stream with handling gas off from what said processing gas tank was seen off, constitutes said each second processing gas flow path,

In said container handling, supply with processing gas from the part of said a plurality of processing gas tank through the said stream of seeing off; Simultaneously, from said processing gas supply source through the said stream storage at body of regulating the flow of vital energy or all of sending in the remaining part of said a plurality of processing gas tank.

13. processing gas supply method according to claim 11 is characterized in that,

Have respectively and be used for sending handling gas into the stream of sending into of said processing gas tank; And be used for seeing stream with handling gas off from what said processing gas tank was seen off, constitute said second and handle gas flow path,

A plurality of said processing gas supply sources are set to supply with different multiple processing gas; And; Handling gas flow path with said first constitutes to have and is branched off into supply source a plurality of and that be connected with the said body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of said processing gas supply source and connects stream

With said said each supply source connection stream branch that sends into stream from the said first processing gas flow path of the said second processing gas flow path,

From said processing gas tank through said see stream off and in said container handling, supply with the processing gas of forming by regulation kind and ratio after; From said a plurality of processing gas supply sources a part or all through said first the processing gas flow path in said container handling, supply with the processing gas of forming by said regulation kind and ratio; Meanwhile, from the part of said a plurality of processing gas supply sources or all said processing gas tank, store the processing gas of forming by the kind different and/or ratio with said regulation kind and ratio through the said stream of sending into.

14. processing gas supply method according to claim 11 is characterized in that,

A plurality of said processing gas tank are set, and corresponding with the quantity of said processing gas tank and be provided with a plurality of said second and handle gas flow paths,

Have respectively and be used for sending handling gas into the stream of sending into of said processing gas tank; And be used for seeing stream with handling gas off from what said processing gas tank was seen off, constitutes said each second processing gas flow path,

A plurality of said processing gas supply sources are set to supply with different multiple processing gas; And; Handling gas flow path with said first constitutes to have and is branched off into supply source a plurality of and that be connected with the said body supply source of regulating the flow of vital energy accordingly everywhere with the quantity of said processing gas supply source and connects stream

With said said each supply source connection stream branch that sends into stream from the said first processing gas flow path of the said second processing gas flow path,

In said container handling, supply with the processing gas of forming by regulation kind and ratio from the part of said a plurality of processing gas tank through the said stream of seeing off; And from said a plurality of processing gas supply sources a part or all through said first the processing gas flow path in said container handling, supply with the processing gas of forming by said regulation kind and ratio; Meanwhile, from the part of said a plurality of processing gas supply sources or all through the said stream of sending at said a plurality of processing gas tank the remaining processing gas that storage is made up of the kind different with said regulation kind and ratio and/or ratio part or all.

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