CN101154884A - Current mode pulse width modulation booster circuit and feedback signal sensing method thereof - Google Patents
Current mode pulse width modulation booster circuit and feedback signal sensing method thereof Download PDFInfo
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Abstract
Description
技术领域 technical field
本发明涉及一种电流模式脉宽调制升压电路(current mode pulse width modulationboost circuit)及其反馈信号感测方法,明确地说涉及一种具有直接感测电感电流(inductorcurrent)和斜率补偿斜坡信号(slope compensation ramp signal)功能的电流模式脉宽调制升压电路及其反馈信号感测方法。The present invention relates to a current mode pulse width modulation boost circuit (current mode pulse width modulation boost circuit) and its feedback signal sensing method, specifically relates to a direct sensing inductor current (inductor current) and slope compensation ramp signal ( A current mode pulse width modulation boost circuit with slope compensation ramp signal) function and its feedback signal sensing method.
背景技术 Background technique
图1是常规的一电流模式脉宽调制升压电路10,其包含一升压单元11、一分压电路19、一误差放大器12、一比较器13、一电感电流产生器(inductor current generator)14、一斜率补偿斜坡产生器(slope compensation ramp generator)15、一振荡器16、一脉宽产生器17和一缓冲器(buffer)18。一电压VIN通过所述升压单元11进行升压以产生一较高的直流输出电压VOUT。所述升压单元11包含一输入电容C1、一升压电感L、一MOS晶体管T、一整流二极管D和一输出电容C2。所述输入电容C1是用以滤掉所述电压VIN的纹波电压(ripple voltage)。当所述MOS晶体管T处于导通状态,所述整流二极管D为逆向偏压,此时电流将顺向流经所述升压电感L,而使所述升压电感L的电压上升;然而电流并非瞬间流经所述升压电感L,而是呈线性增加,因此会建立一电磁场。此时,当所述MOS晶体管T处于导通状态时,输出的电流完全由所述输出电容C2提供。当所述MOS晶体管T处于截止状态时,所述升压电感L已无法再存储能量,因此所述升压电感L中所存储的所述电磁场将被释放出来;此时,所述升压电感L上的电压极性将被反转,使得所述升压电感L释放其所存储的能量到所述输出电容C2,同时使得所述整流二极管D连接所述升压电感L的一端(即节点N3)得到比所述电压VIN还高的电压,这股能量提供一负载电流,并且同时再为所述输出电容C2充电。所述分压电路19是由两个串联电阻R1和R2所构成。一分压电压VF1则由一连接所述电阻R1和R2的节点N2取出,送到所述误差放大器12和一参考电压VREF进行比较,以产生一误差信号EO。随后,所述误差信号EO将通过所述比较器13与一反馈信号VSUM进行比较。所述比较器13的输出(即VF2)则和一来自所述振荡器16的振荡信号S1一同输入到所述脉宽产生器17。所述脉宽产生器17所产生的一驱动信号SDR再经所述缓冲器18产生的一闸极控制信号SG以调整所述MOS晶体管T导通的时间(即,调整所述驱动信号SDR的脉冲持续时间(pulse duration)),进而控制所述直流输出电压VOUT。1 is a conventional current mode pulse width
所述电感电流产生器14接收来一自所述节点N3的电压信号VSEN,经其内部的一电压转换电流的机制(例如经一电阻或一转导放大器(transconductance amplifier))作用后而生成一流经所述升压电感L的电感电流ISEN。图2(a)到2(c)例示常规技术中所述电压信号VSEN的不同撷取点N31、N32和N33。图2(a)的所述电压信号VSEN撷取方式虽然比其它两者准确,然而却较耗电。图2(b)和2(c)的所述电压信号VSEN撷取方式与图2(a)相比具有无损耗(lossless)的优点,然而却分别具有低准确度和匹配的问题。且所述电压信号VSEN经所述电感电流产生器14的作用后,所述电感电流ISEN将很容易造成失真(distortion)。另外,所述斜率补偿斜坡产生器15的目的是为解决在电流模式转换器(current mode converters)中,当其在连续导通模式(continuous conduction)下操作且所述驱动信号SDR的工作周期大于50%时,产生的开回路不穏定(open-loop instability)、次谐波振荡(sub-harmonicoscillation)和对噪声过于灵敏(noise sensitivity)等问题。所述斜率补偿斜坡产生器15接收一来自所述振荡器16的振荡信号S2,再经其内部的一电压转换电流的机制(例如一转导放大器)作用后而生成一斜率补偿斜坡信号ISLO。同样地,所述斜率补偿斜坡信号lSLO经所述斜率补偿斜坡产生器15的作用后,很容易造成失真。最后,所述电感电流ISEN和所述斜率补偿斜坡信号ISLO流经一电阻Rf,在一节点N1处产生所述反馈信号VSUM。The inductor
发明内容 Contents of the invention
本发明一方面提供一种电流模式脉宽调制升压电路,通过一包含一电流源和一电容的反馈信号产生单元,直接测量所述电流模式脉宽调制升压电路内部的电感电流和一等效斜率补偿斜坡信号(equivalent slope compensation ramp signal),以形成一反馈信号并调整一直流输出电压,而减少常规技术中测量电感电流和产生斜率补偿斜坡信号时所造成的信号失真。One aspect of the present invention provides a current mode pulse width modulation boost circuit, through a feedback signal generation unit including a current source and a capacitor, directly measure the inductor current and the first class of the current mode pulse width modulation boost circuit An effective slope compensation ramp signal (equivalent slope compensation ramp signal) is used to form a feedback signal and adjust a DC output voltage, thereby reducing the signal distortion caused by measuring the inductor current and generating the slope compensation ramp signal in the conventional technology.
本发明的另一方面提供一种应用于一电流模式脉宽调制升压电路中的反馈信号感测方法,通过直接测量所述升压电路中流经升压电感的电感电流和通过一电流源对一电容充电所具有的一斜率特性所形成的一等效斜率补偿斜坡信号,以产生一反馈信号并调整一直流输出电压。Another aspect of the present invention provides a feedback signal sensing method applied in a current-mode pulse width modulation boost circuit, by directly measuring the inductor current flowing through the boost inductor in the boost circuit and through a current source pair An equivalent slope compensation ramp signal formed by a slope characteristic of capacitor charging is used to generate a feedback signal and adjust a DC output voltage.
本发明揭示一种电流模式脉宽调制升压电路,其包含一升压单元、一分压电路、一误差放大器、一比较器、一脉宽产生器和一反馈信号产生单元。所述升压单元包含一升压电感和一开关,所述升压单元将一电压进行升压以产生一直流输出电压。所述分压电路利用所述直流输出电压产生一分压电压。所述误差放大器比较一参考电压与所述分压电压以产生一误差信号。所述比较器比较所述误差信号与一反馈信号以产生一第一信号。所述脉宽产生器接收所述第一信号和一来自一振荡器的第二信号以产生一第三信号,其中所述第三信号用以控制所述开关。所述反馈信号产生单元与所述升压单元耦合以产生所述反馈信号,其中所述反馈信号包含一流经所述升压电感的等效电感电流信号和一等效斜率补偿斜坡信号。The invention discloses a current mode pulse width modulation boost circuit, which includes a boost unit, a voltage divider circuit, an error amplifier, a comparator, a pulse width generator and a feedback signal generation unit. The boost unit includes a boost inductor and a switch, and the boost unit boosts a voltage to generate a DC output voltage. The voltage dividing circuit generates a divided voltage by using the DC output voltage. The error amplifier compares a reference voltage with the divided voltage to generate an error signal. The comparator compares the error signal with a feedback signal to generate a first signal. The pulse width generator receives the first signal and a second signal from an oscillator to generate a third signal, wherein the third signal is used to control the switch. The feedback signal generating unit is coupled to the boost unit to generate the feedback signal, wherein the feedback signal includes an equivalent inductor current signal passing through the boost inductor and an equivalent slope compensation ramp signal.
本发明另外揭示一种应用于一电流模式脉宽调制升压电路的反馈信号感测方法,其包含以下步骤:(a)提供一具有一周期(period)的脉宽调制信号;(b)在所述周期的一脉冲持续时间(pulse duration)内,通过一电流源对一电容充电,以形成一等效斜率补偿斜坡信号;(c)在所述脉冲持续时间内,使一流经一升压电感的电感电流流经一等效电阻,以形成一等效电感电流信号;和(d)利用所述电容的耦合特性,并配合所述等效斜率补偿斜坡信号和所述等效电感电流信号以形成一反馈信号。本发明一实施例中,所述反馈信号取自所述电流源与所述电容的接点。The present invention further discloses a feedback signal sensing method applied to a current mode pulse width modulation boost circuit, which includes the following steps: (a) providing a pulse width modulation signal with a period (period); (b) in In a pulse duration (pulse duration) of the cycle, charge a capacitor through a current source to form an equivalent slope compensation ramp signal; (c) during the pulse duration, make a current flow through a boost The inductance current of the inductor flows through an equivalent resistance to form an equivalent inductance current signal; and (d) utilizing the coupling characteristics of the capacitance and cooperating with the equivalent slope compensation ramp signal and the equivalent inductance current signal to form a feedback signal. In an embodiment of the present invention, the feedback signal is obtained from a junction between the current source and the capacitor.
本发明的电流模式脉宽调制升压电路因为直接测量电感电流并利用所述反馈信号产生单元直接产生所述等效斜率补偿斜坡信号,且没有涉及电压转换电流机制(voltage-to-current transfer structure)的使用,因此与常规技术相比,本发明具有以下优点:(1)减少反馈信号的失真;(2)因为直接测量和产生信号,所以具有优选的反应速率;(3)可免除常规技术中开回路穏定性的问题。The current mode pulse width modulation boost circuit of the present invention directly measures the inductor current and uses the feedback signal generating unit to directly generate the equivalent slope compensation ramp signal, and does not involve a voltage-to-current transfer structure ), so compared with the conventional technique, the present invention has the following advantages: (1) reduces the distortion of the feedback signal; (2) has a preferred reaction rate because of the direct measurement and generation of the signal; (3) can dispense with the conventional technique The problem of open loop stability.
附图说明 Description of drawings
图1常规的一电流模式脉宽调制升压电路;Fig. 1 conventional current mode pulse width modulation boost circuit;
图2(a)~2(c)例示常规技术电压信号的不同撷取点;且Figures 2(a)-2(c) illustrate different acquisition points of conventional technology voltage signals; and
图3本发明一实施例的电流模式脉宽调制升压电路。FIG. 3 is a current mode PWM boost circuit according to an embodiment of the present invention.
具体实施方式 Detailed ways
图3是本发明一实施例的电流模式脉宽调制升压电路20,其包含一升压单元21、一分压电路29、一误差放大器22、一比较器23、一脉宽产生器27、一缓冲器28和一反馈信号产生单元24。所述升压单元21包含一升压电感L′、一MOS晶体管T′、一与所述升压电感L′与所述MOS晶体管T′的接点P1连接的整流二极管D′、一用以滤掉所述电压VIN的纹波电压的输入电容C3和一连接在所述整流二极管D′与一接地端之间的输出电容C5,其中所述输出电容C5用以产生一直流输出电压VOUT。所述分压电路29利用所述直流输出电压VOUT产生一分压电压VF3。所述分压电路29包含一与所述整流二极管D′连接的第一电阻R3和一连接在所述第一电阻R3与所述接地端之间的第二电阻R4,其中所述分压电压VF3取自一连接所述第一电阻R3与所述第二电阻R4的节点P3。所述误差放大器22比较一参考电压VREF与所述分压电压VF3以产生一误差信号E′O。所述比较器23比较所述误差信号E′O与一反馈信号V′SUM以产生一信号VF4。所述脉宽产生器27接收所述信号VF4和一来自一振荡器26的信号SOSC以产生一信号S′DR,其中所述信号S′DR用以控制所述MOS晶体管T′。所述缓冲器28′为任选的,其提升所述信号S′DR的驱动能力,以形成一闸极控制信号S′G以控制所述MOS晶体管T′。所述反馈信号产生单元24与所述升压单元21耦合以产生所述反馈信号V′SUM,其中所述反馈信号V′SUM包含一流经所述升压电感L′的等效电感电流信号(未图示)和一等效斜率补偿斜坡信号(未图示)。所述反馈信号产生单元24包含一电容C4和一与所述电容C4串联的电流源Is。所述电容C4的一端与所述升压电感L′与所述MOS晶体管T′的接点P1耦合。所述电流源Is与所述电容C4的另一端点耦合。3 is a current mode pulse width modulation boost circuit 20 according to an embodiment of the present invention, which includes a boost unit 21, a voltage divider circuit 29, an error amplifier 22, a comparator 23, a pulse width generator 27, A buffer 28 and a feedback signal generation unit 24 . The boost unit 21 includes a boost inductor L', a MOS transistor T', a rectifier diode D' connected to the junction P1 of the boost inductor L' and the MOS transistor T', and a filter An input capacitor C3 that drops the ripple voltage of the voltage V IN and an output capacitor C5 connected between the rectifier diode D' and a ground terminal, wherein the output capacitor C5 is used to generate a DC output voltage V OUT . The voltage dividing circuit 29 utilizes the DC output voltage V OUT to generate a divided voltage V F3 . The voltage divider circuit 29 includes a first resistor R3 connected to the rectifier diode D' and a second resistor R4 connected between the first resistor R3 and the ground terminal, wherein the divided voltage V F3 is obtained from a node P3 connecting the first resistor R3 and the second resistor R4. The error amplifier 22 compares a reference voltage V REF with the divided voltage V F3 to generate an error signal E′O. The comparator 23 compares the error signal E′O with a feedback signal V′ SUM to generate a signal V F4 . The pulse width generator 27 receives the signal V F4 and a signal S OSC from an oscillator 26 to generate a signal S′ DR , wherein the signal S′ DR is used to control the MOS transistor T′. The buffer 28' is optional, and it increases the driving capability of the signal S'DR to form a gate control signal S'G to control the MOS transistor T'. The feedback signal generation unit 24 is coupled to the boost unit 21 to generate the feedback signal V' SUM , wherein the feedback signal V' SUM includes an equivalent inductor current signal ( not shown) and an equivalent slope compensation ramp signal (not shown). The feedback signal generating unit 24 includes a capacitor C4 and a current source I s connected in series with the capacitor C4 . One end of the capacitor C4 is coupled to the junction P1 of the boost inductor L′ and the MOS transistor T′. The current source Is is coupled to the other end of the capacitor C4.
图3的所述实施例的电流模式脉宽调制升压电路20与图1的所述电流模式脉宽调制升压电路10的反馈信号V′SUM的产生方法不同,以下将详细说明本发明所述反馈信号V′SUM的感测方法。The method of generating the feedback signal V' SUM of the current mode pulse width modulation boost circuit 20 of the embodiment of FIG. 3 is different from that of the current mode pulse width
当所述MOS晶体管T′导通时,由所述电压VIN产生且流经所述升压电感L′的电感电流IL′将通过所述导通的MOS晶体管T′流到接地端。所述电感电流IL′于节点P1所形成的一电位V′SEN可由以下式(1)得出,When the MOS transistor T' is turned on, the inductor current IL' generated by the voltage V IN and flowing through the boost inductor L' will flow to the ground through the turned-on MOS transistor T'. A potential V' SEN formed by the inductor current IL' at the node P1 can be obtained by the following formula (1):
V′SEN=VIN×DTs×Rds/L (1)V′ SEN =V IN ×DTs×Rds/L (1)
其中DTs表示所述第四信号S′DR的脉冲持续时间(即,所述MOS晶体管T′导通的时间),Rds表示所述MOS晶体管T′导通时的电阻且L表示所述升压电感L′的电感值。因为所述电位V′SEN蕴含所述电感电流IL′的消息,因此也称为等效电感电流信号,其与所述电压VIN、所述升压电感L′、所述MOS晶体管T′导通时的电阻值Rds和所述脉宽产生器的一工作周期(duty cycle)相关。此外,所述电流源Is在所述MOS晶体管T′导通时对所述电容C4充电,因此将在节点P1和P2之间建立一电位差VSLO,其可由以下式(2)得出,Where DTs represents the pulse duration of the fourth signal S' DR (that is, the time when the MOS transistor T' is turned on), Rds represents the resistance when the MOS transistor T' is turned on and L represents the boost The inductance value of the inductor L'. Because the potential V' SEN contains information about the inductor current IL', it is also called an equivalent inductor current signal, which is connected to the voltage V IN , the boost inductor L', and the MOS transistor T'. The on-time resistance Rds is related to a duty cycle of the pulse width generator. In addition, the current source I s charges the capacitor C4 when the MOS transistor T' is turned on, so a potential difference V SLO will be established between the nodes P1 and P2, which can be obtained by the following equation (2): ,
VSLO=Is×DTs/C (2)V SLO =I s ×DTs/C (2)
其中DTs表示所述第四信号S′DR的脉冲持续时间(即,所述MOS晶体管T′导通的时间),C表示所述电容C4的电容值。因为所述电位差VSLO蕴含所述斜率补偿斜坡信号相关的消息(即,对所述电容C4充电时其所展现的斜率特性类似于所述振荡器26所产生的第三信号SOSC),因此也称为等效斜率补偿斜坡信号,其与所述电流源Is、所述电容C4和所述脉宽产生器27的所述工作周期相关。因此利用所述电容C4的耦合特性,由节点P2取出的反馈信号V′SUM即为所述等效电感电流信号与等效斜率补偿斜坡信号之和。也就是说,Wherein DTs represents the pulse duration of the fourth signal S′ DR (ie, the time when the MOS transistor T′ is turned on), and C represents the capacitance value of the capacitor C4 . Because the potential difference V SLO contains information related to the slope compensation ramp signal (ie, the slope characteristic exhibited by the capacitor C4 is similar to the third signal S OSC generated by the oscillator 26 when charging the capacitor C4 ), Therefore, it is also called an equivalent slope compensation ramp signal, which is related to the duty cycle of the current source I s , the capacitor C4 and the pulse width generator 27 . Therefore, by utilizing the coupling characteristics of the capacitor C4, the feedback signal V′ SUM obtained from the node P2 is the sum of the equivalent inductor current signal and the equivalent slope compensation ramp signal. That is to say,
V′SUM=V′SEN+VSLO=VIN×DTs×Rds/L+Is×DTs/CV' SUM =V' SEN +V SLO =V IN ×DTs×Rds/L+I s ×DTs/C
=(VtN×Rds/L+Is/C)×DTs (3)=(V tN ×Rds/L+I s /C)×DTs (3)
其中式(3)中的(VIN×Rds/L+Is/C)具有固定斜率的特性。(V IN ×Rds/L+I s /C) in the formula (3) has a characteristic of a fixed slope.
由以上的说明可知,本发明的电流模式脉宽调制升压电路及其反馈信号感测方法因为通过一包含一电流源和一电容的反馈信号产生单元,直接测量所述电流模式脉宽调制升压电路内部的电感电流并直接转换成一等效电感电流信号;同时,利用所述电流源对所述电容充电而直接产生一具有斜率特性的等效斜率补偿斜坡信号,而直接在所述电流源和所述电容的连接点形成一反馈信号。因此本发明与常规技术相比具有(1)减少反馈信号的失真;(2)具有优选的反应速率;和(3)避免开回路穏定性问题的优点。It can be seen from the above description that the current mode PWM boost circuit and its feedback signal sensing method of the present invention directly measure the current mode PWM boost circuit through a feedback signal generation unit including a current source and a capacitor. The inductance current inside the voltage circuit is directly converted into an equivalent inductance current signal; at the same time, an equivalent slope compensation ramp signal with slope characteristics is directly generated by using the current source to charge the capacitor, and directly in the current source The connection point with the capacitor forms a feedback signal. Therefore, the present invention has the advantages of (1) reducing the distortion of the feedback signal; (2) having a better reaction rate; and (3) avoiding the open loop stability problem compared with the conventional technology.
本发明的技术内容和技术特点已揭示如上,然而所属领域的技术人员仍可能基于本发明的教示和揭示而作出各种不脱离本发明精神的替代和修改。因此,本发明的保护范围应不限于实施例所揭示的内容,而应包括各种不脱离本发明的替代和修改,并由所附权利要求书涵盖。The technical content and technical features of the present invention have been disclosed above, but those skilled in the art may still make various substitutions and modifications based on the teaching and disclosure of the present invention without departing from the spirit of the present invention. Therefore, the protection scope of the present invention should not be limited to the contents disclosed in the embodiments, but should include various substitutions and modifications that do not depart from the present invention, and should be covered by the appended claims.
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CN101339209B (en) * | 2008-08-08 | 2012-02-29 | 欣旺达电子股份有限公司 | Method for on-load detection in boosted circuit using impulse width |
CN101534094B (en) * | 2009-04-14 | 2013-11-06 | 无锡中星微电子有限公司 | Compensating circuit |
CN103179323A (en) * | 2011-12-26 | 2013-06-26 | 广明光电股份有限公司 | Device and method for digital signal transmission and reception |
CN112583078A (en) * | 2020-12-17 | 2021-03-30 | 西安稳先半导体科技有限责任公司 | Battery pack, battery protection chip and electronic product |
CN112615072A (en) * | 2020-12-17 | 2021-04-06 | 西安稳先半导体科技有限责任公司 | Battery pack, battery protection chip and electronic product |
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