CN101150156A - Light emitting element and method for manufacturing the same - Google Patents
Light emitting element and method for manufacturing the same Download PDFInfo
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- CN101150156A CN101150156A CNA2006101396321A CN200610139632A CN101150156A CN 101150156 A CN101150156 A CN 101150156A CN A2006101396321 A CNA2006101396321 A CN A2006101396321A CN 200610139632 A CN200610139632 A CN 200610139632A CN 101150156 A CN101150156 A CN 101150156A
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Abstract
本发明揭露一种适用于倒装芯片接合的发光元件及其制造方法，该发光元件包括具有多个微凸块的电极，用以直接接合于一基座上。该发光元件可与该基座形成一短距离接合，以提高发光元件的散热效率。
The present invention discloses a light-emitting element suitable for flip chip bonding and a manufacturing method thereof, wherein the light-emitting element comprises an electrode with a plurality of micro-bumps for directly bonding to a base. The light-emitting element can form a short-distance bonding with the base to improve the heat dissipation efficiency of the light-emitting element.
Description
Technical field
The present invention relates to a kind of light-emitting component, particularly relate to a kind of light-emitting component with dimpling cube electrode.
Background technology
Light-emitting diode (Light Emitting Diode; LED) in the utilization of high power illumination, except continuing to promote the brightness, heat dissipation problem is another subject matter of needing solution badly.When light emitting diode light taking-up efficient was not good, the light that can't pass light-emitting device (light-emitting diode and packaging body thereof) can be converted to heat energy.If can't effectively this heat energy be derived light-emitting device, light-emitting diode temperature when operation can rise, thereby causes the component reliability problem.Prior Art proposes many methods for solving the element radiating problem.For example in light-emitting component with sapphire substrate gallium nitride growth series, utilize the secondary transferring mode to remove the relatively poor sapphire substrate of thermal conductivity with the laser light irradiation or in the chemical etching mode, again in conjunction with the preferable silicon substrate of a thermal conductivity, to improve the radiating effect of crystal grain itself.Another improvement mode is to replace traditional lead with flip-chip bond (flip-chip bonding) to engage (wire bonding).Fig. 1 discloses a kind of existing flip-chip bond light-emitting device, comprise a light-emitting diode 10 and a base unit (submountunit) 20, gold goal projection 24 is formed on first joint sheet 22 and second joint sheet 23, in order in a connection process light-emitting diode 10 is combined with base unit 20.Gold goal projection 24 is to plant gold goal (Goldstud bump) mode, be formed on one by one on first joint sheet 22 and second joint sheet 23, utilize hot sound wave to engage (thermosonic bonding) mode again, gold goal projection on the base unit 20 24 and the electrode 15 of light-emitting diode 10 and 16 composition surface are imposed ultrasonic waves (ultrasonic wave), the composition surface is rubbed fast produce high heat and the fusion joint.General gold goal diameter is about about 50um, and each gold goal size must be close, and avoiding when engaging, lower gold goal can't touch the face of being engaged, and influence product performance and joint rate of finished products.In addition, since gold goal by gold thread in hot sound wave mode, after the fusion of gold thread front end is spheroid, stick together on pedestal, size-constrained in the gold thread size and the further micro of gold goal, cause thickness behind the joint still greater than 20um, therefore can't further reduce the thermal resistance (thermal resistance) of 21 of light-emitting diode 10 and pedestals, thereby limit the application of light-emitting diode 10 at high-power component.
Therefore, the present invention proposes a light-emitting component, can be used for flip-chip and directly engages, and need not additionally plant gold goal on pedestal, have bonding area wide, engage that distance is short, thermal conductivity is high, reliability is good, and the low advantage of cost.
Summary of the invention
The present invention proposes a light-emitting component, the mode with flip-chip bond that is applicable to directly is engaged on the pedestal, comprise electrode, and light-emitting component forms a short distance by a plurality of dimpling pieces and pedestal and engages, to improve the radiating efficiency of light-emitting component with a plurality of dimpling pieces.
Another object of the present invention is providing a light-emitting component, comprise that a transparency carrier, one first conduction type semiconductive layer are formed on this transparency carrier, an active layer is formed on this first conduction type semiconductive layer, one second conduction type semiconductive layer is formed on this active layer, a contact layer is formed on this second conduction type semiconductive layer and an electrode, have a plurality of dimpling pieces, be formed on this contact layer, in order to directly to be engaged on the pedestal.Wherein, these a plurality of dimpling pieces are one of the forming on this electrode.
Another object of the present invention is providing a light-emitting component, comprises a light-emitting diode, a pedestal and a plurality of dimpling piece.This light-emitting diode comprises a transparency carrier and at least one electrode, and this pedestal comprises at least one joint sheet, and these a plurality of dimpling pieces and are integrally formed on electrode or the joint sheet then between electrode and joint sheet.
Another object of the present invention comprises providing a light-emitting diode to comprise a transparency carrier and at least one electrode that form a plurality of dimpling pieces on this electrode, wherein, these a plurality of dimpling pieces are one of the forming on this electrode in the manufacture method that a light-emitting component is provided.
Description of drawings
Fig. 1 is a schematic diagram, shows according to the light-emitting component shown in the Prior Art;
Fig. 2 is a schematic diagram, shows according to a light-emitting component shown in the present;
Fig. 3 is a schematic diagram, shows according to another embodiment shown in the present;
Fig. 4 is a schematic diagram, shows according to another embodiment shown in the present;
Fig. 5 is a schematic diagram, shows according to another embodiment shown in the present;
Fig. 6 is a schematic diagram, shows according to an electrode top view shown in the present;
Fig. 7 is a schematic diagram, shows according to another electrode top view shown in the present;
Fig. 8 is according to the measured electric current of the present invention and the usefulness curve chart of luminous quantity.
The simple symbol explanation
10,30,50,60,70: luminescence unit;
20,40: base unit;
11,31: transparency carrier;
21,41: pedestal;
12,32,62,72: luminous lamination;
121,321,621,721: the first conductive type semiconductor layers;
122,322,622,722: active layer;
123,323,623,723: the second conductive type semiconductor layers;
13,33,63,73: the first contact layers;
14,34,64,74: the second contact layers;
15,35,65,75,85,95: the first electrodes;
16,36,66,76,86,96: the second electrodes;
22,42: the first joint sheets;
23,43: the second joint sheets;
24: the gold goal projection;
37: the electrode bed course.
Embodiment
Please refer to Fig. 2, comprise a light-emitting diode 30 and a base unit 40 according to a light-emitting component of the present invention.Light-emitting diode 30 comprises a transparency carrier 31, comprises that at least a material is selected from Al
2O
3, GaN, Glass, GaP, SiC, and CVD diamond the material group, the luminous lamination 32 that are constituted be formed on the transparency carrier 31, luminous lamination 32 can emit beam when being subjected to driven, the color of this light depends on the material of luminous lamination 32, for example (Al
zGa
1-z)
0.5In
0.5That the visual z value of the material of P series is sent is red, yellow or green light; Al
xIn
yGa
(1-x-y)The composition of the then visual x of the material of N series, y sends the light of indigo plant or purple, one first contact layer 33, one second contact layer 34, one first electrode 35, reaches one second electrode 36.Luminous lamination 32 comprises one first conductive type semiconductor layer 321, an active layer (active layer) 322, reaches one second conductive type semiconductor layer 323, first conductive type semiconductor layer 321 can be n type or p type semiconductor layer, the conduction type of second conductive type semiconductor layer 323 and first conductivity type opposite, wherein Bu Fen second conductive type semiconductor layer 323 and active layer 322 etched removing with exposed first conductive type semiconductor layer 321 partly.First contact layer 33 is formed on the first exposed conductive type semiconductor layer 321, second contact layer 34 is formed on second conductive type semiconductor layer 323, first contact layer 33 and second contact layer 34 are in order to form ohmic contact (ohmic contact) with first conductive type semiconductor layer 321 and second conductive type semiconductor layer 323 respectively, and first contact layer 33 or second contact layer 34 comprise that a kind of material is selected from BeAu, ZnAu, SiAu, reaches the material group that GeAu constituted.First electrode 35 is formed on first contact layer 33, and 36 at second electrode is formed on second contact layer 34.In one embodiment, light-emitting diode 30 comprises that also an electrode bed course 37 is formed between second contact layer 34 and second electrode 36, so that the upper surface of second electrode 36 and first electrode 35 is in fact on same horizontal plane.First electrode 35 or second electrode 36 comprise that at least a material is selected from gold, silver, aluminium, reaches the material group that copper constituted, and the material of electrode bed course 37 can be and is same as second electrode or second contact layer or other metal material.First electrode 35 and second electrode, 36 surfaces have a plurality of dimpling pieces, when directly being engaged in a base unit 40, for example are printed circuit board (PCB) (printed circuit board; PCB) time,, electric current is conducted on the pedestal by a plurality of dimpling pieces in order to a plurality of current channels to be provided.Directly the mode that engages can be utilized the mode that engages (thermosonic bonding) as hot sound wave, directly to be engaged in a base unit 40.Base unit 40 comprises that a pedestal 41 and one first joint sheet 42 and one second joint sheet 43 are formed on the pedestal 41, in order to engage with first electrode 35 and second electrode 36 respectively; Pedestal 41 comprises the material that a heat conduction is good, comprises that at least a material is selected from silicon, SiC, AlN, CuW, Cu, reaches the material group that the CVD diamond is constituted; First joint sheet 42 or second joint sheet 43 comprise a metal or alloy material, for example gold, silver, aluminium or ashbury metal.In an embodiment, a plurality of dimpling pieces can existing photoetching and etching mode carry out the electrode layer of the patterning and a part of degree of depth of etching to form a plurality of dimpling pieces.The thickness of dimpling piece is 0.3～20um, and shape then can be polygon, circle or strip; The minor face length of for example polygonal minimum length of side of the size of dimpling piece, round diameter or strip is between 1um to 250um.In a preferred embodiment of the present invention, minimum dimpling piece thickness is 0.3um, after engaging, can provide a short circuit to close distance significantly to reduce the thermal resistance of 40 of light-emitting diode 30 and base units, and have the acceptable grow degree (shear strength) of cutting, to keep good joint.In another embodiment, as shown in Figure 3, electrode 55 and 56 is a plurality of dimpling pieces separated from one another, can existing photoetching and etching mode form, perhaps can be optionally to electroplate or the film growth mode form.
Please continue with reference to figure 4, according to another embodiment of the present invention, a light-emitting component comprises a light-emitting diode 60 and a base unit 40.Light-emitting diode 60 comprises a transparency carrier 31, has a first area a, a second area b on the transparency carrier 31, reaches a trench area c; One luminous lamination 62 is formed at first area a and the second area b on the transparency carrier 31 haply, luminous lamination comprises one first conductive type semiconductor layer 621, an active layer (active layer) 622 in regular turn, reaches one second conductive type semiconductor layer 623, and the luminous lamination 62 that is positioned at first area a and second area b is connected with first conductive type semiconductor layer 621; One first contact layer 63 is formed on second conductive type semiconductor layer 623 that is positioned at first area a, one second contact layer 64 is formed on second conductive type semiconductor layer 623 that is positioned at second area b; One first electrode 65 is formed on first contact layer 63, and one second electrode 66 be formed on second contact layer 64.Because the luminous lamination 62 of first electrode, 65 belows does not remove, so first electrode 65 and second electrode 66 can be maintained at the same horizontal plane.Wherein, first electrode 65 and second electrode 66 comprise a plurality of dimpling pieces, when directly being engaged in a base unit 40, in order to a plurality of current channels to be provided, electric current are conducted on the pedestal by a plurality of dimpling pieces; Directly the mode that engages can be utilized the mode that engages (thermosonic bonding) as hot sound wave, directly to be engaged in a base unit 40; These a plurality of dimpling pieces can existing photoetching and etching mode carry out the electrode layer of the patterning and a part of degree of depth of etching to form the dimpling piece.The thickness of dimpling piece is 0.3～20um, and shape then can be polygon, circle or strip; The minor face length of for example polygonal minimum length of side of the size of dimpling piece, round diameter or strip is between 1～250um.In a preferred embodiment, minimum dimpling piece thickness is 0.3um, after engaging, can provide a short circuit to close distance significantly reducing thermal resistance, and have the acceptable grow degree (shear strength) of cutting, to keep good joint.In another embodiment, first electrode 65 and second electrode 66 can be a plurality of dimpling pieces separated from one another, can existing photoetching and etching mode form, perhaps can be optionally to electroplate or the film growth mode form.
Please continue with reference to figure 5, according to another embodiment of the present invention, a light-emitting diode 70 comprises a transparency carrier 31, has a first area a, a second area b on the transparency carrier 31, reaches a trench area c; One luminous lamination 72 is formed at first area a and the second area b on the transparency carrier 31 haply, and luminous lamination 72 comprises one first conductive type semiconductor layer 721, an active layer (active layer) 722 in regular turn, reaches one second conductive type semiconductor layer 723; Wherein, second conductive type semiconductor layer, 723 surfaces have concaveconvex shape, and the luminous lamination 72 that is positioned at first area a and second area b is connected with first conductive type semiconductor layer 721; One first contact layer 73 and one second contact layer 74 are complied with the surface configuration of second conductive type semiconductor layer 723, are formed at respectively on second conductive type semiconductor layer 723 of first area a and second area b; And one first electrode 75 and one second electrode 76 comply with the surface configuration of first contact layer 73 and second contact layer 74, be formed at respectively on first contact layer 73 and second contact layer 74, make first electrode 75 and second electrode, 76 surfaces form a plurality of dimpling pieces, when directly being engaged in a base unit 40, in order to a plurality of current channels to be provided, electric current is conducted on the pedestal by a plurality of dimpling pieces.Directly the mode that engages can be utilized the mode that engages (thermosonic bonding) as hot sound wave, directly to be engaged in a base unit 40.In an embodiment, the concaveconvex shape of second conductive type semiconductor layer 723 forms with existing photoetching etching mode; The formation of first electrode 75 and second electrode 76, deposit earlier one in regular turn and conform to the electrode layer of contact layer of second conductive type semiconductor layer on second conductive type semiconductor layer, again with existing mode, for example the photoetching etching mode or (lift-off) method of the peeling off contact layer and electrode layer that will be positioned at trench area removes.Wherein, the dimpling piece thickness of first electrode 75 and second electrode 76 is between 0.3～20um, the shape of dimpling piece can be polygon, circle or strip, and the minor face of for example polygonal minimum length of side of its size, round diameter or strip is long to be between 1um～250um.In a preferred embodiment, minimum dimpling piece thickness is 0.3um, after engaging, can provide a short circuit to close distance significantly reducing thermal resistance, and have the acceptable grow degree (shearstrength) of cutting to keep good joint.In another embodiment, second conductive type semiconductor layer is a flat surface, and contact layer has convex-concave surface, and the surface configuration that follow-up electrode layer is complied with contact layer is covered on the contact layer, makes electrode surface have the shape of dimpling piece.
Another embodiment of the present invention also can be used the disclosed inventive principle of earlier figures 2 and Fig. 3, a plurality of dimpling pieces is formed on first joint sheet 42 and second joint sheet 43 of base unit 40, still can reach identical joint effect.
Fig. 6 and Fig. 7 are that this case is according to the disclosed electrode embodiment of the present invention.As Figure 6 and Figure 7, a plurality of dimpling pieces on first electrode (85 and 95) or second electrode (86 and 96) are circle or strip, and are an array arrangement.For obtaining preferable joint effect, can adjust the size and the arrangement mode thereof of dimpling piece or increase bonding area (being dimpling piece surface area summation), but along with bonding area increases, the requirement of electrode evenness with raising, to avoid causing factors such as buckling phenomenon because of dimpling piece uneven thickness or crystal grain stress, causing partly, sunk area engages bad.It is between 5% to 50% that bonding area accounts for electrode region surrounded area ratio.
Fig. 8 be traditional gold goal engage with the usefulness curve ratio that directly engages of the present invention.In embodiments of the invention, the dimpling piece of electrode is the circle of diameter 10um, is an array and arranges, and account for total electrode area and be about 5% (being same as the gold goal contact area approximately).By curve among the figure as can be known, luminous quantity (flux) is roughly with proportional by electric current, but with the electric current increase, luminous quantity can present saturated gradually.Use the light-emitting component of traditional gold goal connected structure, its saturation current is about 0.7 ampere (A), maximum luminous quantity is about 50 lumens (lm), and be about 1.2 amperes (A) according to the measured saturation current of the light-emitting component of the direct connected structure of the present invention, maximum luminous quantity is about 75 lumens (lm), improves about 50%.Following table then be measured thermal resistance value relatively, by following table as can be known, according to the thermal resistance between light-emitting component of the present invention and base unit far below the thermal resistance between the conventional luminescent device base unit.In sum, the present invention has and reaches the progressive effect that causes low thermal resistance and high brightness.
| Juncture | V f[V] | I f[A] | ΔT[K] | Thermal resistance [℃/W] |
| Gold goal engages | 0.35 | 2.25 | 30.4 | 38.6 |
| Au-Au directly engages | 0.35 | 2.26 | 15.6 | 19.7 |
Each cited embodiment of the present invention only is in order to explanation the present invention, is not in order to limit the scope of the invention.Anyone is to any modification that the present invention did or change neither disengaging claim of the present invention.
Claims (17)
1. light-emitting component comprises:
Transparency carrier;
The first conduction type semiconductive layer is formed on this transparency carrier;
Active layer is formed on this first conduction type semiconductive layer;
The second conduction type semiconductive layer is formed on this active layer;
Contact layer is formed on this second conduction type semiconductive layer, and forms ohmic contact with this second conduction type semiconductive layer; And
Electrode has a plurality of dimpling pieces, is formed on this contact layer, and when being used to this light-emitting component and being engaged on the pedestal via these a plurality of dimpling pieces, these a plurality of dimpling pieces provide a plurality of current channels.
2. light-emitting component as claimed in claim 1, wherein the thickness of these a plurality of dimpling pieces is between 0.3～20 micron.
3. light-emitting component as claimed in claim 1, wherein the shape of these a plurality of dimpling pieces comprises circle, strip, polygon or its combination.
4. light-emitting component as claimed in claim 1 also comprises pedestal, and these a plurality of dimpling pieces of this electrode are engaged on this pedestal with hot sound wave juncture.
5. light-emitting component comprises:
Light-emitting diode comprises at least one electrode;
Pedestal comprises at least one joint sheet; And
A plurality of dimpling pieces are between this electrode and this joint sheet, and when being used to this light-emitting diode and being engaged on this pedestal via these a plurality of dimpling pieces, these a plurality of dimpling pieces provide a plurality of current channels.
6. light-emitting component as claimed in claim 5, wherein these a plurality of dimpling pieces are one of the forming on this electrode or this joint sheet.
7. light-emitting component as claimed in claim 5, wherein the thickness of these a plurality of dimpling pieces is between 0.3～20 micron.
8. light-emitting component as claimed in claim 5, wherein the shape of these a plurality of dimpling pieces comprises circle, strip, polygon or its combination.
9. light-emitting component as claimed in claim 5, wherein the material of these a plurality of dimpling pieces comprises that at least a material is selected from gold, silver, aluminium, reaches the material group that copper constituted.
10. light-emitting component as claimed in claim 5, wherein this light-emitting diode also comprises:
Transparency carrier;
The first conduction type semiconductive layer is formed on this transparency carrier;
Active layer is formed on this first conduction type semiconductive layer, in order to emit beam under bias voltage;
The second conduction type semiconductive layer is formed on this active layer; And
Contact layer is formed on this second conduction type semiconductive layer, and forms ohmic contact with this second conduction type semiconductive layer,
Wherein, this electrode is formed on this contact layer.
11. the manufacture method of a light-emitting component may further comprise the steps:
Provide light-emitting diode to comprise transparency carrier and at least one electrode;
Provide pedestal to comprise at least one joint sheet; And
Form a plurality of dimpling pieces on this electrode or this joint sheet.
12. manufacture method as claimed in claim 11 also comprises
This light-emitting diode of flip-chip bond is to this pedestal.
13. manufacture method as claimed in claim 12, wherein this flip-chip bond mode comprises that hot sound wave engages.
14. manufacture method as claimed in claim 11, wherein these a plurality of dimpling pieces are one of the forming on this electrode or this joint sheet.
15. manufacture method as claimed in claim 11, wherein the thickness of these a plurality of dimpling pieces is between 0.3～20 micron.
16. manufacture method as claimed in claim 11, wherein these a plurality of dimpling pieces comprise circle, strip, polygon or its combination.
17. manufacture method as claimed in claim 11, wherein the material of these a plurality of dimpling pieces comprises that at least a material is selected from gold, silver, aluminium, reaches the material group that copper constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101396321A CN101150156B (en) | 2006-09-22 | 2006-09-22 | Light emitting element and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101396321A CN101150156B (en) | 2006-09-22 | 2006-09-22 | Light emitting element and manufacturing method thereof |
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|---|---|---|---|
| CN201010163933.4A Division CN101834254B (en) | 2006-09-22 | Light emitting component and its manufacturing method |
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| CN101150156A true CN101150156A (en) | 2008-03-26 |
| CN101150156B CN101150156B (en) | 2012-05-30 |
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| CN102054906A (en) * | 2009-11-09 | 2011-05-11 | 亿光电子工业股份有限公司 | Manufacturing method of light emitting diode and light emitting diode |
| CN102064164A (en) * | 2010-10-28 | 2011-05-18 | 山东华光光电子有限公司 | Freely combined lamp wick of flip-chip power LED tube core |
| CN102437261A (en) * | 2010-09-29 | 2012-05-02 | 晶元光电股份有限公司 | Semiconductor light emitting element and method for manufacturing the same |
| CN102074636B (en) * | 2009-11-19 | 2013-04-10 | 亿光电子工业股份有限公司 | Light-emitting diode device with flip chip structure |
| CN104282816A (en) * | 2013-07-05 | 2015-01-14 | 大连徳豪光电科技有限公司 | Flip chip light-emitting diode with Bragg reflecting layer and method for manufacturing flip chip light-emitting diode with Bragg reflecting layer |
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| CN106663730A (en) * | 2014-07-31 | 2017-05-10 | 首尔伟傲世有限公司 | Light-emitting diode |
| CN108305837A (en) * | 2013-07-22 | 2018-07-20 | 英飞凌科技奥地利有限公司 | The method for producing semiconductor devices |
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| CN102074636B (en) * | 2009-11-19 | 2013-04-10 | 亿光电子工业股份有限公司 | Light-emitting diode device with flip chip structure |
| CN102437261B (en) * | 2010-09-29 | 2016-04-20 | 晶元光电股份有限公司 | Semiconductor light emitting element and manufacturing method thereof |
| CN102437261A (en) * | 2010-09-29 | 2012-05-02 | 晶元光电股份有限公司 | Semiconductor light emitting element and method for manufacturing the same |
| CN102064164A (en) * | 2010-10-28 | 2011-05-18 | 山东华光光电子有限公司 | Freely combined lamp wick of flip-chip power LED tube core |
| CN102064164B (en) * | 2010-10-28 | 2012-03-21 | 山东华光光电子有限公司 | Freely combined lamp wick of flip-chip power LED tube core |
| CN104282816A (en) * | 2013-07-05 | 2015-01-14 | 大连徳豪光电科技有限公司 | Flip chip light-emitting diode with Bragg reflecting layer and method for manufacturing flip chip light-emitting diode with Bragg reflecting layer |
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| CN106663730A (en) * | 2014-07-31 | 2017-05-10 | 首尔伟傲世有限公司 | Light-emitting diode |
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| CN110676367A (en) * | 2014-07-31 | 2020-01-10 | 首尔伟傲世有限公司 | Light emitting diode |
| CN104810439A (en) * | 2015-05-05 | 2015-07-29 | 湘能华磊光电股份有限公司 | Method for manufacturing III-group semiconductor light-emitting devices |
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| CN110867462A (en) * | 2019-10-30 | 2020-03-06 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN112909153A (en) * | 2019-12-03 | 2021-06-04 | 深圳市聚飞光电股份有限公司 | Flip LED chip, circuit board and electronic equipment |
| WO2022011518A1 (en) * | 2020-07-13 | 2022-01-20 | 重庆康佳光电技术研究院有限公司 | Flip led chip, production method therefor, and display panel |
| JP2023539920A (en) * | 2020-09-08 | 2023-09-20 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | Devices with improved connection structures and methods of manufacturing devices |
| JP7538340B2 (en) | 2020-09-08 | 2024-08-21 | エイエムエス－オスラム インターナショナル ゲーエムベーハー | Devices with improved connection structures and methods for manufacturing devices - Patents.com |
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| CN101150156B (en) | 2012-05-30 |
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