CN101148751A - A method for improving the coercive force of metal magnetic multilayer film - Google Patents
A method for improving the coercive force of metal magnetic multilayer film Download PDFInfo
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- CN101148751A CN101148751A CNA2007101766997A CN200710176699A CN101148751A CN 101148751 A CN101148751 A CN 101148751A CN A2007101766997 A CNA2007101766997 A CN A2007101766997A CN 200710176699 A CN200710176699 A CN 200710176699A CN 101148751 A CN101148751 A CN 101148751A
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- multilayer film
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 16
- 239000002184 metal Substances 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title claims abstract description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910000684 Cobalt-chrome Inorganic materials 0.000 claims abstract description 31
- 239000010952 cobalt-chrome Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910015136 FeMn Inorganic materials 0.000 claims abstract description 21
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 10
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 229910052774 Proactinium Inorganic materials 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 5
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 239000002885 antiferromagnetic material Substances 0.000 abstract 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 abstract 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000863 Ferronickel Inorganic materials 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 description 2
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910000943 NiAl Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
Abstract
本发明提供了一种用反铁磁材料提高金属磁性多层膜矫顽力的方法，利用磁控溅射仪，在清洗干净的玻璃基片沉积铂Pt/[钴铬CoCr/铂Pt]5/铁锰FeMn/铂Pt多层膜。本发明的优点在于：薄膜的厚度较小，同时又具有良好的垂直磁各向异性和较高的矫顽力，比较适合应用于CoCr合金薄膜的超高密度垂直磁记录。此外，沉积后的薄膜无需进行后退火处理，所以它还具有成本低，制备简单等优点，适用于未来的生产。
The invention provides a method for improving the coercive force of a metal magnetic multilayer film with an antiferromagnetic material, using a magnetron sputtering apparatus to deposit platinum Pt/[cobalt chromium CoCr/platinum Pt] 5 on a cleaned glass substrate /Iron manganese FeMn/platinum Pt multilayer film. The invention has the advantages that the thin film has small thickness, good perpendicular magnetic anisotropy and high coercive force, and is more suitable for ultra-high-density perpendicular magnetic recording of CoCr alloy thin film. In addition, the deposited thin film does not need post-annealing treatment, so it also has the advantages of low cost and simple preparation, and is suitable for future production.
Description
Technical field
The present invention relates to the preparation method of metal magnetic multilayer film, a kind of method of improving the metal magnetic multilayer film magnetic property with antiferromagnet particularly is provided.
Background technology
The metal magnetic multilayer film structure be widely used in magnetic recording information read with memory technology in.For example, people such as Dieny utilize silicon single crystal Si/ tantalum Ta/ ferronickel NiFe/ copper Cu/ ferronickel NiFe/ ferrimanganic FeMn/ tantalum Ta structure to prepare Spin Valve multilayer film (B.Dieny, V.S.Speriosu, J S.Metin, et al.J.Appl.Phys.69,4774 (1991)), this Spin Valve multilayer film is the giant magnetic resistor material of a kind of practicability of developing rapidly the nearly more than ten years, and it has broad application prospects at transmitter, hard disc of computer read head and magneto-resistor random access memory aspects such as (MRAM).The metal magnetic multilayer film structure also has in the memory technology of magnetic recording hard disk very widely to be used, and IBM in 2000 and Fuji Tsu utilize nickel aluminium NiAl/ Chrome metal powder CrX/ cobalt chromium CoCr/ cobalt Co alloy/carbon C metal magnetic multilayer film structure to prepare area density and can reach 15.5Gb/cm on glass substrate
2CoCr magnetic recording hard disk (D.Weller, A.Moser, L.Folks, et al.IEEE Tran.Magn.36,10 (2000)), the magnetic recording area density is had increased significantly.
Though multi-layer film structure is widely used in the hard disk Magnetographic Technology, but needs for practicability, that usually the thickness of each layer in the metal magnetic multilayer film is done is very thin, this makes the magnetic property of film, and especially coercive force is lower, be easy to be subjected to the interference of external magnetic field, being unfavorable for realizing the super-high density magnetic recording, is the key that realizes the super-high density Magnetographic Technology so improve the coercive force of metal magnetic multilayer film.For CoCr based alloy magnetic recording materials, more existing reports aspect the coercive force that improves multilayer film, as utilize platinum Pt to be cache layer (E.B.Svedberg, J.Appl.Phys.92,1024 (2002)), utilize cobalt chromium CoCr/ copper Cu to do middle layer (I.Tamaiet al.J.Magn.Magn.Mater.235,78 (2001)) etc.But after utilizing these methods, the coercive force increase rate of film is also little, remains further to be improved.The investigator adopts the coercive force (Y.Hirayama et al.J.Appl.Phys.87,6890 (2000)) of subsequent heat treatment method raising film in addition, but this must cause the increase of production cost, also is unfavorable for following application.
Summary of the invention
The present invention proposes to utilize the exchange-coupling interaction between inverse ferric magnetosphere and the metal magnetic multilayer film to improve the coercive force of CoCr/Pt multilayer film, for the coercive force that improves metal magnetic multilayer film provides a kind of novel method.
The present invention is a kind of method that improves metal magnetic multilayer film coercive force, and it is to deposit platinum Pt (50～500 )/[cobalt chromium CoCr (5 )/platinum Pt (7～25 )] successively at the glass substrate that cleans up
5/ ferrimanganic FeMn (25～500 )/platinum Pt (20～50 ), described glass substrate surface adds the magnetic field perpendicular to the face direction, size is 100～3000 Oe, described substrate temperature is 100～300 ℃, the depositing temperature of described FeMn layer is 10～50 ℃, and sputtering chamber base vacuum degree is 1 * 10
-5～7 * 10
-5Pa, Ar Pressure is 0.9～1.6Pa during sputter.
In addition, in the above methods, the speed rotation that described glass substrate can 18r/min.
The present invention utilizes between FeMn and the CoCr/Pt multilayer film and has exchange-coupling interaction, improved the perpendicular magnetic anisotropic of CoCr/Pt multilayer film, increase the pinning position of pinning ferromagnetic layer domain wall and the barrier height that domain wall moves simultaneously, thereby improved the coercive force H of the vertical face direction of CoCr/Pt multilayer film
C ⊥After the deposition ferrimanganic layer, the H of CoCr/Pt multilayer film
C ⊥Maximum can be than the improve of no FeMn layer nearly 50%.The invention has the advantages that: because the thickness of film is less, have good perpendicular magnetic anisotropic and higher coercive force again simultaneously, relatively be fit to be applied to the super-high density vertical magnetic recording of CoCr alloy firm.In addition, post-depositional film need not to carry out after annealing and handles, so that it also has a cost is low, prepare advantages such as simple, is applicable to the production in future.
Description of drawings
Fig. 1 is sedimentary Pt on glass substrate (200 )/[CoCr (5 )/Pt (15 )]
5/ film and Pt (200 )/[CoCr (5 )/Pt (15 )]
5The vertical face direction coercive force H of/FeMn (25～200 )/Pt (25 ) film
C ⊥Variation relation with FeMn layer thickness d.
Embodiment
As Fig. 1, wherein the sputtering technology condition of curve (a) is: sputtering chamber base vacuum degree is 1 * 10
-5Pa, argon gas during sputter (99.99%) press and are 0.9Pa.In the sputter procedure, substrate surface adds the magnetic field perpendicular to the face direction, and size is 100Oe, and substrate is with the speed rotation of 18r/min; Substrate temperature is 100 ℃, and the depositing temperature of FeMn layer is 10 ℃;
The sputtering technology condition of curve (b) is: sputtering chamber base vacuum degree is 3 * 10
-5Pa, argon gas during sputter (99.99%) press and are 1.2Pa.In the sputter procedure, substrate surface adds the magnetic field perpendicular to the face direction, and size is 700 Oe, and substrate is with the speed rotation of 18r/min; Substrate temperature is 200 ℃, and the depositing temperature of FeMn layer is 30 ℃;
The sputtering technology condition of curve (c) is: sputtering chamber base vacuum degree is 7 * 10
-5Pa, argon gas during sputter (99.99%) press and are 1.6Pa.In the sputter procedure, substrate surface adds the magnetic field perpendicular to the face direction, and size is 3000 Oe, and substrate is with the speed rotation of 18r/min; Substrate temperature is 300 ℃, and the depositing temperature of FeMn layer is 50 ℃.
Preparation method of the present invention is as follows:
At first with glass substrate organic chemistry solvent, deionized water and alcohol ultrasonic cleaning, on the sputtering chamber sample base of packing into then.(b) is example with curve among Fig. 1, before sputter, earlier the substrate surface applying vertical magnetic field adjusted to 700 Oe, and substrate temperature is adjusted to 200 ℃.Sputtering chamber base vacuum 3 * 10
-5Pa, argon gas when sputter (purity is 99.99%) press to depositing platinum Pt (200 ) and [cobalt chromium CoCr (5 )/platinum Pt (15 )] successively under the condition of 1.2Pa
5Alternate multi-layered film is with preparation Pt (200 )/[CoCr (5 )/Pt (15 )]
5Film; Deposit platinum Pt (200 ) and [cobalt chromium CoCr (5 )/platinum Pt (15 )] successively
5Alternate multi-layered film deposits ferrimanganic FeMn (25～200 )/platinum Pt (25 ) again with preparation Pt (200 )/[CoCr (5 )/Pt (15 )] when then substrate temperature is reduced to 30 ℃
5/ FeMn (25～200 )/Pt (25 ) film.
As can be seen from Figure 1, after three curves all reflected the antiferromagnetic FeMn layer of introducing, the coercive force of film had rising clearly.For example, be 3 * 10 at sputtering chamber base vacuum degree
-5Pa, argon gas during sputter (99.99%) press and are 1.2Pa, and substrate surface adds the magnetic field perpendicular to the face direction, and size is 700 Oe, and substrate is with the speed rotation of 18r/min; Substrate temperature is 200 ℃, and the depositing temperature of FeMn layer is (curve b) under 30 ℃ of processing condition, Pt (200 )/[CoCr (5 )/Pt (15 )]
5The coercive force of multilayer film is lower, has only 750 Oe.At Pt (200 )/[CoCr (5 )/Pt (15 )]
5After depositing the FeMn layer above the multilayer film, along with the increase of FeMn layer thickness d, H
C ⊥Increase gradually.When the FeMn layer reached 70 , the coercive force of film reached 1092 Oe, than Pt (200 )/[CoCr (5 )/Pt (15 )]
5The coercive force of multilayer film has improved nearly 50%.This explanation, the introducing of inverse ferric magnetosphere FeMn can improve the coercive force of CoCr/Pt multilayer film effectively.
Claims (2)
1. method that improves metal magnetic multilayer film coercive force, it is characterized in that depositing platinum Pt (50～500 )/[cobalt chromium CoCr (5 )/platinum Pt (7～25 )] 5/ ferrimanganic FeMn (25～500 )/platinum Pt (20～50 ) successively at the glass substrate that cleans up, described glass substrate surface adds the magnetic field perpendicular to the face direction, size is 100～3000 Oe, described substrate temperature is 100～300 ℃, the depositing temperature of described FeMn layer is 10～50 ℃, and sputtering chamber base vacuum degree is 1 * 10
-5～7 * 10
-5Pa, Ar Pressure is 0.9～1.6Pa during sputter.
2. a method that improves metal magnetic multilayer film coercive force is characterized in that the speed rotation of described glass substrate with 18r/min.
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| CN200710176699A CN100575541C (en) | 2007-11-01 | 2007-11-01 | A method for improving the coercive force of metal magnetic multilayer film |
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| CN200710176699A CN100575541C (en) | 2007-11-01 | 2007-11-01 | A method for improving the coercive force of metal magnetic multilayer film |
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| CN100575541C CN100575541C (en) | 2009-12-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101845637B (en) * | 2009-03-25 | 2012-01-04 | 罗阳 | Grain boundary diffusion process for neodymium iron boron magnet |
| CN103265295A (en) * | 2013-05-24 | 2013-08-28 | 中国计量学院 | Preparation method of barium ferrite magnetic material with high coercivity |
| CN102082018B (en) * | 2009-11-26 | 2013-10-16 | 中国科学院物理研究所 | Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof |
| CN114032504A (en) * | 2021-11-04 | 2022-02-11 | 之江实验室 | A heavy metal/ferromagnetic/heterojunction that realizes field-free switching and its preparation method |
| CN119049881A (en) * | 2024-11-04 | 2024-11-29 | 江苏奕腾智能科技有限公司 | Multilayer iron-cobalt-nickel composite permanent magnet film and manufacturing method thereof |
-
2007
- 2007-11-01 CN CN200710176699A patent/CN100575541C/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101845637B (en) * | 2009-03-25 | 2012-01-04 | 罗阳 | Grain boundary diffusion process for neodymium iron boron magnet |
| CN102082018B (en) * | 2009-11-26 | 2013-10-16 | 中国科学院物理研究所 | Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof |
| CN103265295A (en) * | 2013-05-24 | 2013-08-28 | 中国计量学院 | Preparation method of barium ferrite magnetic material with high coercivity |
| CN103265295B (en) * | 2013-05-24 | 2015-04-08 | 中国计量学院 | Preparation method of barium ferrite magnetic material with high coercivity |
| CN114032504A (en) * | 2021-11-04 | 2022-02-11 | 之江实验室 | A heavy metal/ferromagnetic/heterojunction that realizes field-free switching and its preparation method |
| CN119049881A (en) * | 2024-11-04 | 2024-11-29 | 江苏奕腾智能科技有限公司 | Multilayer iron-cobalt-nickel composite permanent magnet film and manufacturing method thereof |
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| CN100575541C (en) | 2009-12-30 |
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