CN101143707A - A kind of ultra-high frequency nano-oscillator - Google Patents
A kind of ultra-high frequency nano-oscillator Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 58
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 58
- 230000005684 electric field Effects 0.000 abstract description 14
- 230000005641 tunneling Effects 0.000 abstract description 10
- 230000010355 oscillation Effects 0.000 abstract description 7
- 230000008602 contraction Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
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Abstract
一种超高频纳米振荡器,属纳米振荡器,该振荡器由碳纳米管(1)固定端固定连接于电源正极,碳纳米管(1)自由端接近于电源负极相连的负电极(3),其间隙为碳纳米管长度的10%以内。当正负极间施加电压时,碳纳米管自由端与负电极之间产生强电场引起碳纳米管的电致伸长,可达10%,使碳纳米管与负电极之间的间隙减小直至产生隧穿电流。此时,其间的电场强度因电流导通而消失,碳纳米管在弹性应变能作用下缩回,其与负电极间距增大,隧穿电流消失,电场随之增强,碳纳米管又电致伸长。碳纳米管交替经历电致伸长和弹性收缩,其频率随碳纳米管长度减小而升高,在纳米尺度的长度范围内,可达上百GHz到数THz。结构简单,可实现THz可控振荡。
An ultra-high-frequency nano-oscillator, belonging to a nano-oscillator, the oscillator is fixedly connected to the positive pole of a power supply by a fixed end of a carbon nanotube (1), and the free end of the carbon nanotube (1) is close to the negative electrode connected to the negative pole of the power supply (3 ), the gap is within 10% of the carbon nanotube length. When a voltage is applied between the positive and negative electrodes, a strong electric field is generated between the free end of the carbon nanotube and the negative electrode to cause the electrical elongation of the carbon nanotube, which can reach 10%, and the gap between the carbon nanotube and the negative electrode is reduced. until a tunneling current is generated. At this time, the electric field strength between them disappears due to the conduction of the current, the carbon nanotubes retract under the action of elastic strain energy, the distance between them and the negative electrode increases, the tunneling current disappears, the electric field increases accordingly, and the carbon nanotubes are electrically induced again. elongation. Carbon nanotubes alternately experience electrical elongation and elastic contraction, and the frequency increases with the decrease of carbon nanotube length, and can reach hundreds of GHz to several THz in the nanoscale length range. The structure is simple, and THz controllable oscillation can be realized.
Description
技术领域 technical field
本发明涉及的是在纳米尺度基于碳纳米管高频振荡特性、电致变形原理和遂穿电流对碳纳米管微小轴向振荡引起的间隙变化的高度敏感性而设计的超高频纳米振荡器。The invention relates to an ultra-high-frequency nano-oscillator designed at the nanometer scale based on the high-frequency oscillation characteristics of carbon nanotubes, the principle of electro-induced deformation, and the high sensitivity of tunneling current to the gap change caused by the tiny axial oscillation of carbon nanotubes .
背景技术 Background technique
在过去十多年中,碳纳米管制备技术已经高度发展。由于碳纳米管的尺寸特征和优异的机械和电子性能,研究人员设计出了众多基于碳纳米管的纳米器件如原子力显微镜探针、场发射平板显示器、GHz机械振荡器、GHz开关和双稳态存储器等。申请者发现了碳纳米管高达约10%的轴向巨电致伸缩效应。本发明基于碳纳米管在电场中的轴向电致变形、以及它超高的轴向振荡本征频率特性和量子隧穿效应设计出了一种工作频率可控并且高达THz的纳米器件:高频纳米振荡器。In the past ten years, carbon nanotube preparation technology has been highly developed. Due to the size characteristics and excellent mechanical and electronic properties of carbon nanotubes, researchers have designed numerous nanodevices based on carbon nanotubes, such as atomic force microscope probes, field emission flat panel displays, GHz mechanical oscillators, GHz switches, and bistable states. memory etc. Applicants have discovered an axial giant electrostrictive effect of carbon nanotubes up to about 10%. Based on the axial electro-deformation of carbon nanotubes in the electric field, its ultra-high axial oscillation eigenfrequency characteristics and quantum tunneling effect, the present invention designs a nano-device with controllable operating frequency and up to THz: high frequency nano-oscillator.
发明内容 Contents of the invention
本发明的目的在于利用碳纳米管的特殊电致变形能力提供一种结构简单的可控超高频纳米振荡器。本发明的超高频纳米振荡器包括碳纳米管、正电极、负电极和电源。其中碳纳米管的固定端与正电极相连,碳纳米管的自由端与负电极之间存在纳米级间隙,电源的正极连于正电极,电源的负极连于负电极。所述的碳纳米管的自由端与负电极之间的纳米级间隙控制在碳纳米管长度的10%以内,其量值与频率要求和设计的使用电压有关。一种阵列式超高频纳米振荡器,是将碳纳米管排成行列式的阵列结构,排成行的每个碳纳米管的固定端均固定在同一块正电极板上,接电源正极,每个碳纳米管的自由端与负电极之间保持纳米级间隙,各个负电极相互并联后接电源负极;排成列的每个碳纳米管的固定端固定在正电极上,各个正电极相互并联后接电源正极,每个碳纳米管的自由端与一块负电极板保持纳米级间隙,此负电极接电源负极。通过给两个电极间施加电压,在碳纳米管和电极间的间隙产生强的电场,致使碳纳米管因电致伸长和由此导致的隧穿电流和电场强度变化而产生THz范围的电控机电振荡。振荡器的频率主要由碳纳米管长度决定,可实现上百GHz到数十THz间的振荡。有望用于THz信号技术、纳米机电系统等领域。The purpose of the present invention is to provide a controllable ultra-high frequency nano oscillator with simple structure by utilizing the special electro-deformation ability of carbon nanotubes. The ultra-high-frequency nano-oscillator of the invention includes carbon nanotubes, positive electrodes, negative electrodes and a power supply. Wherein the fixed end of the carbon nanotube is connected to the positive electrode, there is a nanoscale gap between the free end of the carbon nanotube and the negative electrode, the positive pole of the power supply is connected to the positive electrode, and the negative pole of the power supply is connected to the negative electrode. The nanoscale gap between the free end of the carbon nanotube and the negative electrode is controlled within 10% of the length of the carbon nanotube, and its magnitude is related to the frequency requirement and the designed operating voltage. An array type ultra-high frequency nano-oscillator is an array structure in which carbon nanotubes are arranged in a row, and the fixed end of each carbon nanotube arranged in a row is fixed on the same positive electrode plate, connected to the positive electrode of the power supply, A nanoscale gap is maintained between the free end of each carbon nanotube and the negative electrode, and each negative electrode is connected to the negative electrode of the power supply after being connected in parallel; the fixed end of each carbon nanotube arranged in a row is fixed on the positive electrode, and each positive electrode is mutually connected After parallel connection, the positive pole of the power supply is connected, and the free end of each carbon nanotube maintains a nanoscale gap with a negative electrode plate, and the negative electrode is connected to the negative pole of the power supply. By applying a voltage between the two electrodes, a strong electric field is generated in the gap between the carbon nanotubes and the electrodes, causing the carbon nanotubes to generate electricity in the THz range due to the electrical elongation and the resulting changes in tunneling current and electric field strength. Control electromechanical oscillation. The frequency of the oscillator is mainly determined by the length of the carbon nanotubes, which can realize oscillations between hundreds of GHz and tens of THz. It is expected to be used in THz signal technology, nano-electromechanical systems and other fields.
附图说明 Description of drawings
图1为超高频纳米振荡器示意图。标号名称为:1、碳纳米管,2、正电极,3、负电极。Figure 1 is a schematic diagram of a UHF nano-oscillator. The label names are: 1. Carbon nanotube, 2. Positive electrode, 3. Negative electrode.
图2为超高频纳米振荡器工作原理图。Figure 2 is a schematic diagram of the working principle of the ultra-high frequency nano-oscillator.
图3为阵列式超高频纳米振荡器主视图。Fig. 3 is a front view of the array ultrahigh frequency nano oscillator.
图4为阵列式超高频纳米振荡器俯视图。Fig. 4 is a top view of an arrayed ultrahigh frequency nano-oscillator.
具体实施方式 Detailed ways
图1是本发明的超高频纳米振荡器示意图,其中碳纳米管1可以直接生长于正电极2,或用物理或化学方法连接到正电极2上。碳纳米管1的自由端与电极3的间距控制是关键环节,可以由高精度的位移控制实现,如原子力显微镜探针技术,也可以用化学模板定位和加工方法控制。正电极2和负电极3之间需要简单的电路提供工作电压。Fig. 1 is a schematic diagram of the ultra-high frequency nano-oscillator of the present invention, wherein
图2为超高频纳米振荡器工作原理图。(a)碳纳米管1未加外电场时,没有形变产生,无隧穿电流产生;(b)碳纳米管1加上外加电场初,没有形变产生,无隧穿电流产生;(c)由于外电场作用,碳纳米管1端部产生电场增强效应,其与负电极3间产生强的电场,在强电场和注入电荷作用下碳纳米管1将产生电致伸长,在与负电极3近接触的纳米间距内产生强的隧穿电流;(d)碳纳米管1在外电场下导致电致伸长达到最大时,电流达到最大值,间隙间的电压变为最小;(e)由于间隙间的电场力骤降,碳纳米管内集聚的电荷释放,碳纳米管1将回弹,在与负电极3近接触的纳米间距内产生的隧穿电流使得电流继续维持一小量;(f)碳纳米管1缩回至原位,无隧穿电流产生,电流变为最小。以后不断在应变力、电场力、和电荷注入作用下,超高频纳米振荡器需要经历(b)--(c)--(d)---(e)--(f)--(b)的循环过程,产生持续的超高频电机可控振荡。Figure 2 is a schematic diagram of the working principle of the ultra-high frequency nano-oscillator. (a) When the
图3和图4是阵列式超高频纳米振荡器示意图。这种阵列式超高频纳米振荡器是将碳纳米管排成行列式结构,如图3所示,将碳纳米管排成行,每个碳纳米管的固定端均固定在同一块正电极板上,正电极板与电源正极相连,每个碳纳米管的自由端各自与负电极相连;如图4所示,又将碳纳米管排成列与图3所示的行构成阵列式结构,排成列的每个碳纳米管的固定端各自固定在一块正电极上,所有正电极相互并联后与电源正极相连,每个碳纳米管的自由端均与一块负电极板保持纳米级间隙,这块负电极板与电源负极相连。阵列式超高频纳米振荡器的设计是为了实现超高频纳米振荡器输出信号放大。实现高功率输出可用于THz信号技术、纳米机电系统等领域。Fig. 3 and Fig. 4 are schematic diagrams of array ultrahigh frequency nano-oscillators. This array type ultra-high frequency nano oscillator is to arrange carbon nanotubes in a determinant structure, as shown in Figure 3, arrange carbon nanotubes in rows, and the fixed end of each carbon nanotube is fixed on the same positive electrode On the board, the positive electrode plate is connected to the positive electrode of the power supply, and the free ends of each carbon nanotube are connected to the negative electrode respectively; as shown in Figure 4, the carbon nanotubes are arranged in columns and rows as shown in Figure 3 to form an array structure , the fixed end of each carbon nanotube in a row is respectively fixed on a positive electrode, all the positive electrodes are connected in parallel to each other and then connected to the positive electrode of the power supply, and the free end of each carbon nanotube maintains a nanoscale gap with a negative electrode plate , this negative plate is connected to the negative pole of the power supply. The design of the array ultrahigh frequency nano oscillator is to realize the output signal amplification of the ultra high frequency nano oscillator. Achieving high power output can be used in THz signal technology, nano-electromechanical systems and other fields.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011029988A1 (en) * | 2009-09-10 | 2011-03-17 | Nokia Corporation | An oscillator apparatus |
CN110446680A (en) * | 2016-12-27 | 2019-11-12 | 耶达研究及发展有限公司 | Electromechanical resonator based on metal-sulfur category chalcogenide nanotube |
CN113316558A (en) * | 2018-12-27 | 2021-08-27 | 住友电气工业株式会社 | Method for producing carbon nanotube, method for producing carbon nanotube assembly line bundle, carbon nanotube production apparatus, carbon nanotube assembly line production apparatus, and carbon nanotube assembly line bundle production apparatus |
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2007
- 2007-10-23 CN CNA2007101344567A patent/CN101143707A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011029988A1 (en) * | 2009-09-10 | 2011-03-17 | Nokia Corporation | An oscillator apparatus |
US8084336B2 (en) | 2009-09-10 | 2011-12-27 | Nokia Corporation | Oscillator apparatus |
CN102577100A (en) * | 2009-09-10 | 2012-07-11 | 诺基亚公司 | An oscillator apparatus |
CN110446680A (en) * | 2016-12-27 | 2019-11-12 | 耶达研究及发展有限公司 | Electromechanical resonator based on metal-sulfur category chalcogenide nanotube |
CN110446680B (en) * | 2016-12-27 | 2021-04-09 | 耶达研究及发展有限公司 | Electromechanical resonator based on metal-chalcogenide nanotubes |
US11411551B2 (en) | 2016-12-27 | 2022-08-09 | Yeda Research And Development Co. Ltd. | Electromechanical resonators based on metal-chalcogenide nanotubes |
US11757428B2 (en) | 2016-12-27 | 2023-09-12 | Yeda Research And Development Co. Ltd. | Electromechanical resonators based on metal-chalcogenide nanotubes |
CN113316558A (en) * | 2018-12-27 | 2021-08-27 | 住友电气工业株式会社 | Method for producing carbon nanotube, method for producing carbon nanotube assembly line bundle, carbon nanotube production apparatus, carbon nanotube assembly line production apparatus, and carbon nanotube assembly line bundle production apparatus |
CN113316558B (en) * | 2018-12-27 | 2024-01-02 | 住友电气工业株式会社 | Carbon nanotube, carbon nanotube assembly line, and method and apparatus for manufacturing carbon nanotube assembly line bundle |
US12168607B2 (en) | 2018-12-27 | 2024-12-17 | Sumitomo Electric Industries, Ltd. | Method for manufacturing carbon nanotube, method for manufacturing carbon nanotube assembled wire, method for manufacturing carbon nanotube assembled wire bundle, carbon nanotube manufacturing apparatus, carbon nanotube assembled wire manufacturing apparatus, and carbon nanotube assembled wire bundle manufacturing apparatus |
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