CN101140394A - LCD device - Google Patents
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- CN101140394A CN101140394A CNA2006101290897A CN200610129089A CN101140394A CN 101140394 A CN101140394 A CN 101140394A CN A2006101290897 A CNA2006101290897 A CN A2006101290897A CN 200610129089 A CN200610129089 A CN 200610129089A CN 101140394 A CN101140394 A CN 101140394A
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- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 19
- 230000000052 comparative effect Effects 0.000 claims description 35
- 230000005684 electric field Effects 0.000 claims description 22
- 238000009413 insulation Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 13
- 239000010408 film Substances 0.000 claims description 5
- 230000000694 effects Effects 0.000 description 10
- 238000000059 patterning Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The invention provides a fringe field switching liquid crystal display device. The first substrate and the second substrate are arranged oppositely and separated by a certain distance, and the liquid crystal layer is clamped between the first substrate and the second substrate. The plurality of gate lines and the plurality of data lines are vertically staggered on the first substrate, wherein a plurality of sub-pixel regions are defined in regions between the gate lines and the data lines. An opposite electrode is disposed in each subpixel region on the first substrate. And the pixel electrode is arranged on the opposite electrode with an insulating layer in between, wherein the pixel electrode comprises a plurality of parallel electrode arms, each electrode arm comprises a first segment, a second segment and a third segment, the first segment forms an angle theta with the horizontal direction, the second segment forms an angle phi with the horizontal direction, the third segment forms an angle theta with the horizontal direction, and the angle theta is larger than the angle phi.
Description
Invention field
The present invention relates to a kind of LCD device, and relate in particular to a kind of fringe field switching (FFS) type LCD device.
Background technology
LCD (LCD) has many advantages, and for example volume is little, in light weight, and low power consumption etc., thereby has been applied to mobile display device, notebook computer, PC (PC) screen and TV electronic products such as (TV) widely.With regard to the application demand of large scale screen and TV, its key is to possess fast-response speed, the wide visual angle of high contrast ratio, high light transmittance and achromatization counter-rotating.Transverse electric field switches (in-plane switching is called for short IPS) type LCD and has the key characteristics of above-mentioned high image quality image concurrently, and become one of selection of main application.
Fringe field switches (Fringe Field Switching, hereinafter to be referred as FFS) the type LCD is laterally to rotate along the electrode top layer by the liquid crystal molecule that fringe field makes in the panel homogeneous almost arrange, and then produces the high-penetrability effect that Traditional IP S type LCD can't be reached.Typical FFS type LCD comprises locational pixel of the different layers that is arranged on the same substrate and common electrode.Above-mentioned pixel and the gap of common distance between electrodes less than liquid crystal layer make to produce fringe field around electrode, and then produce high brightness and effect of wide angle.
United States Patent (USP) US discloses the electrode structure that a kind of fringe field switches (FFS) type LCD for 6,856, No. 371.By the electrode design of upper and lower symmetry, make display have high display quality concurrently, unlikely its penetrance that influences.
Fig. 1 shows that traditional fringe field switches the diagrammatic cross-section of (FFS) type LCD.Fringe field switches (FFS) type LCD 1 and comprises first substrate (or claiming infrabasal plate) 10, second substrate (or deserving to be called substrate) 20 and liquid crystal layer 30, and this liquid crystal layer 30 is folded in the space between first substrate 10 and second substrate 20, to constitute the liquid crystal born of the same parents.Comparative electrode (counterelectrode) 11 and many pixel electrodes 13 are arranged on first substrate 10.Insulation course 15 is folded between comparative electrode 11 and the pixel electrode 13.Following both alignment layers 14 is formed on the insulation course 15, and covers pixel electrode 13.Chromatic filter layer 25 reaches goes up the inner surface that both alignment layers 24 is arranged at second substrate 20, with liquid crystal layer 30 adjacency.
Fig. 2 shows that traditional fringe field switches the top view of the board structure of (FFS) type LCD.Article two, parallel gate line 3 and two parallel data lines, 7 apart and quadratures, the zone definitions that is surrounded is a sub-pix (sub-pixel) district therebetween.Comparative electrode 11 is formed in the sub-pix district with pixel electrode 13.Pixel electrode 13 comprises two electrode bars (bar) 13a, and it is parallel to the horn 13b of data line 7 and many inclinations.The two ends of each horn 13b electrically connect with electrode bar 13a respectively, and have pitch angle .It should be noted that the pitch angle of horn 13b can directly influence the driving voltage (V of FFS type LCD
Op).More particularly, the required driving voltage of the bigger then FFS type LCD of the pitch angle of horn 13b is also healed big.
With regard to small panel, have low driving voltage in order to make FFS type LCD, the pitch angle of horn 13b then must reduce.Yet low pitch angle (for example less than 7 °) can cause disclination effect (disclination effect).In addition, the high required driving voltage of pitch angle causes the area of thin-film transistor element TFT to increase, so that the ability of enough Charge Storage to be provided.The structure of thin-film transistor element TFT comprises that grid 3, passage contact 6a/ drain electrode contact 6b with source/drain 4 and source electrode.Drain electrode contact 6b is connected with pixel electrode 13 by contact hole 9.Yet, if increase the shared area of thin-film transistor element TFT, the area of the packed pixel electrode 13 that so is bound to, and then the aperture opening ratio (aperture ratio) and penetrance (transmittance) of reduction FFS type LCD.
In view of this, industry needs a kind of electrode structural designs of FFS type LCD, can take into account its low driving voltage (V
Op) demand, can avoid the disclination effect again and improve its aperture opening ratio and penetrance.
Summary of the invention
In view of this, the object of the present invention is to provide the electrode structure of a kind of FFS type liquid crystal display, the multiple meander-shaped design of tool makes it take into account its low driving voltage (V
Op) demand, can avoid the disclination effect again and improve its aperture opening ratio and penetrance.
For reaching above-mentioned purpose, the invention provides a kind of LCD device, comprising: first substrate and the second substrate subtend are provided with and interval one specific range; Liquid crystal layer, it is folded between first substrate and second substrate; Many gate lines are perpendicular to one another with many data lines and are crisscross arranged on first substrate, the zone of wherein a plurality of sub-pix zone definitions between gate line and data line; Comparative electrode is arranged in each sub-pix zone on first substrate; And first pixel electrode be arranged on this comparative electrode, be separated with at least one insulation course therebetween; Wherein first pixel electrode comprises many parallel horns, and each strip electrode arm comprises first sections, second sections, reaches the 3rd sections; Wherein first sections is from the horizontal by the θ angle, and second sections is from the horizontal by the angle, and the 3rd sections is from the horizontal by the θ angle, and the θ angle is greater than the angle.
It should be noted that above-mentioned LCD device also comprises: second pixel electrode is arranged on this comparative electrode, is separated with at least one insulation course therebetween; Wherein this second pixel electrode comprises many parallel horns, and each strip electrode arm comprises first sections, second sections, reaches the 3rd sections; Wherein this first sections is from the horizontal by-θ angle, and this second sections is from the horizontal by- angle, and the 3rd sections is from the horizontal by-θ angle, and should-the θ angle greater than this-the angle.Further, this first pixel electrode and this second pixel electrode vertically or horizontal direction become the mirror image symmetry.
For reaching above-mentioned purpose, the present invention also provides another LCD device, comprising: first substrate and second substrate are oppositely arranged and interval one specific range; Liquid crystal layer, it is folded between first substrate and second substrate; Many gate lines are perpendicular to one another with many data lines and are crisscross arranged on first substrate, the zone of wherein a plurality of sub-pix zone definitions between gate line and data line; Comparative electrode is arranged in each sub-pix zone on first substrate; And pixel electrode is arranged on the comparative electrode, is separated with insulation course therebetween; Wherein pixel electrode comprises many parallel horns, and each strip electrode arm comprises first sections, second sections, reaches the 3rd sections; Wherein first sections is from the horizontal by the θ angle, and second sections is from the horizontal by the angle, and the 3rd sections is from the horizontal by the θ angle, and the θ angle is greater than the angle; And wherein pixel electrode also comprises a plurality of the 4th sections, it respectively connects first sections of odd number strip electrode arm and the 3rd sections of even number strip electrode arm, and a plurality of the 5th sections, it respectively connects the 3rd sections of odd number strip electrode arm and first sections of even number strip electrode arm.
For reaching above-mentioned purpose, the present invention provides a kind of LCD device again, comprising: first substrate and second substrate are oppositely arranged and interval one specific range; Liquid crystal layer, it is folded between this first substrate and this second substrate; Many gate lines are perpendicular to one another with many data lines and are crisscross arranged on this first substrate, the zone of wherein a plurality of sub-pix zone definitions between this gate line and this data line; And comparative electrode is arranged in each sub-pix zone on this first substrate; Pixel electrode is arranged on this comparative electrode, is separated with at least one insulation course therebetween; Wherein this pixel electrode has first, it comprises many parallel horns, each strip electrode arm comprises first sections, second sections, reaches the 3rd sections, and wherein this first sections is from the horizontal by the θ angle, this second sections is from the horizontal by the angle, the 3rd sections is from the horizontal by the θ angle, and this θ angle is greater than this angle; And wherein this pixel electrode has second portion, it comprises many parallel horns, each strip electrode arm comprises first sections, second sections, reaches the 3rd sections, and wherein this first sections is from the horizontal by-θ angle, this second sections is from the horizontal by- angle, the 3rd sections is from the horizontal by-θ angle, and should-the θ angle greater than this-the angle.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
The accompanying drawing summary
Fig. 1 shows that traditional fringe field switches the diagrammatic cross-section of (FFS) type LCD;
Fig. 2 shows that traditional fringe field switches the top view of (FFS) type LCD;
Fig. 3 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of first embodiment of the invention;
Fig. 4 A to 4F shows the decomposition step synoptic diagram according to the manufacture method of the electrode of substrate structure of the edge electric field drive type LCD of the embodiment of the invention;
The electrode of substrate structure of the edge electric field drive type LCD of Fig. 5 displayed map 3 is along the diagrammatic cross-section of A-A ' line of cut;
The equivalent circuit diagram of the electrode of substrate structure of Fig. 6 displayed map 3 and 5 edge electric field drive type LCD;
Fig. 7 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of the variation example of first embodiment of the invention;
Fig. 8 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of another variation example of first embodiment of the invention;
Fig. 9 shows the another electrode structure top view that changes the pixel region of routine edge electric field drive type LCD according to first embodiment of the invention;
Figure 10 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of second embodiment of the invention; And
Figure 11 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of third embodiment of the invention.
[main element symbol description]
Known portions (Fig. 1,2)
1～fringe field switches (FFS) type LCD;
3～gate line; 4～passage and source/drain;
5～comparative electrode; 6a～source electrode contact;
6b～drain electrode contact; 7～data line;
9～contact hole; 10～the first substrates;
11～comparative electrode; 13～pixel electrode;
13a～electrode bar (bar); The horn of 13b～inclination;
14～following both alignment layers; 15～insulation course;
20～the second substrates; 24～upward both alignment layers;
25～chromatic filter layer; 30～liquid crystal layer;
～pitch angle; TFT～thin-film transistor element.
The present invention's part (Fig. 1～20)
100～substrate;
100a, 100b, 100c, 100d～active component array base board structure;
103,203～gate line;
104,204～semiconductor island;
105,205～comparative electrode;
106a, 206a～source electrode contact;
106b, 206b～drain electrode contact;
107,207～data line;
108,208～common electrode lines;
109,209～contact hole;
113,123,133,213～pixel electrode;
113a～electrode bar (bar);
The horn of 113b, 213b～inclination;
113b1,213b1～first sections;
113b2,213b2～second sections;
113b3,213b3～the 3rd sections;
213a1～the 4th sections; 213a2～the 5th sections;
213c～first, second opening; , θ～pitch angle;
TFT～thin-film transistor element; C
St～storage capacitors;
C
f～edge capacitance; D～zone.
Embodiment
The invention provides a kind of edge electric field drive type liquid crystal display, take into account its low driving voltage (V
Op) demand, can avoid the disclination effect again and improve the effect of its aperture opening ratio and penetrance.
First embodiment
Fig. 3 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of first embodiment of the invention.In the active component array base board structure 101a of Fig. 3, the unit electrode structure comprises that many gate lines 103 are perpendicular to one another with many data lines 107 and is crisscross arranged on substrate 100 zone of wherein a plurality of sub-pix zone definitions between gate line 103 and data line 107.Comparative electrode 105 is arranged on the substrate 100 in each sub-pix zone.First pixel electrode 113 is arranged on the comparative electrode 105, be separated with at least one insulation course (in conjunction with first insulation course 109 and second insulation course 110 of Fig. 5) therebetween, wherein first pixel electrode 113 comprises that two electrode bars (bar) 113a is parallel to data line 107 and many parallel inclined electrode arm 113b, and each bar inclined electrode arm comprises the first sections 113b1, the second sections 113b2, reaches the 3rd sections 113b3.The first sections 113b1 is from the horizontal by the θ angle, and the second sections 113b2 is from the horizontal by the angle, and the 3rd sections 113b3 is from the horizontal by the θ angle, and the θ angle is greater than the angle.According to a preferred embodiment of the invention, roughly between 1 ° to 80 °, perhaps the scope at angle is roughly between 0 ° to 79 ° for the scope at θ angle.Owing to greater than the angle, so can avoid the disclination effect near the folded θ angle of the 3rd sections 113b3 of electrode bar (bar) 113a position (region D) inclined electrode arm and horizontal direction.
Consult Fig. 3 again, thin-film transistor element TFT is arranged at the staggered position of this gate line 103 and data line 107, and its structure comprises that grid 103, passage contacts 106a/ and drain and contact 106b with source/drain 104 and source electrode.Drain electrode contact 106b is electrically connected with pixel electrode 113 by contact hole 109.And, can satisfy low driving voltage (V because the θ angle is designed to the angle greater than
Op) demand, and then reduce the shared area of thin-film transistor element TFT, therefore further improve its aperture opening ratio.
It should be noted that also can comprise alignment film (not shown) on the board structure 101a of the embodiment of the invention, it is formed on the pixel electrode 113, grind (rubbing) orientation with horizontal direction.
Fig. 4 A to 4F shows the decomposition step synoptic diagram according to the manufacture method of the electrode of substrate structure of the edge electric field drive type LCD of the embodiment of the invention.Consult Fig. 4 A, substrate 100 at first is provided, for example transparent glass substrate or plastic substrate, and on substrate 100, form the comparative electrode of patterning.Consult Fig. 4 B, form the patterning the first metal layer on substrate 100, it comprises gate line 103 and common electrode lines 108, and wherein common electrode lines 108 directly electrically connects with comparative electrode 105.Gate line 103 is parallel with common electrode wires 108, and is made of metal material, for example aluminium (Al), molybdenum (Mo) or transparent conductive material.Then, on substrate 100, form gate insulator 109, and cover comparative electrode 105, gate line 107 and common electrode wires 108.
Then, consult Fig. 4 C, form the subregion of the semiconductor layer covering gate polar curve 103 of patterning.For example, form semiconductor island 104 on gate line 103, it comprises noncrystalline silicon island or polysilicon island, and as the channel region of carrier.In the channel region both sides is respectively source electrode and drain electrode.Then, consult Fig. 4 D, on substrate 100, form second metal level of patterning.Second metal level of patterning comprises data line 107, source electrode and drain electrode contact electrode 106a, 106b.Second metal level comprises for example aluminium (Al), molybdenum (Mo) or transparent conductive material.Then, form second insulation course 110 (in conjunction with consulting Fig. 5), and on drain electrode contact electrode 106b, form contact hole 109, shown in Fig. 4 E.
Then, consult Fig. 4 F, form the pixel electrode structure of patternings, and electrically connect with drain electrode contact electrode 106b at second insulation course 110.The position of pixel electrode structure is arranged on the comparative electrode 105, is separated with second insulation course therebetween.Pixel electrode structure 113 comprises that two electrode bars (bar) 113a is parallel to data line 107 and many parallel horn 131b, each strip electrode arm comprises the first sections 131b1, the second sections 131b2, reaches the 3rd sections 131b3, wherein the first sections 131b1 is from the horizontal by the θ angle, the second sections 131b2 is from the horizontal by the angle, the 3rd sections 131b3 is from the horizontal by the θ angle, and the θ angle is greater than the angle.
The electrode of substrate structure of the edge electric field drive type LCD of Fig. 5 displayed map 3 is along the diagrammatic cross-section of A-A ' line of cut.The equivalent circuit diagram of the electrode of substrate structure of Fig. 6 displayed map 3 and 5 edge electric field drive type LCD.Consult Fig. 5, can produce storage capacitors C between the horn 131b of pixel electrode structure and the comparative electrode 105
StWith edge capacitance C
fIf the repeat region area is bigger between horn 131b and the comparative electrode 105, therebetween storage capacitors C
StWith edge capacitance C
fAlso bigger, cause the big TFT element of needs to control it and discharge and recharge.Yet large-area TFT element occupies too much sub-pix space and can cause the aperture opening ratio of viewing area to descend.In view of this, because the embodiment of the invention is designed to the angle greater than with the θ angle, can reach low driving voltage (V
Op) demand, and then reduce the shared area of thin-film transistor element TFT, therefore further improve its aperture opening ratio.
Fig. 7 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of the variation example of first embodiment of the invention.In the active component array base board structure 101b of Fig. 7, its primary structure is similar to the active component array base board structure 101a of Fig. 3, be simple and clear event, simplify its narration at this, difference is that second pixel electrode 123 comprises many parallel horn 113b, each strip electrode arm comprises first sections, second sections, reaches the 3rd sections, wherein this first sections is from the horizontal by-θ angle, this second sections is from the horizontal by- angle, the 3rd sections is from the horizontal by-θ angle, and should-the θ angle greater than this-the angle.
Fig. 8 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of another variation example of first embodiment of the invention.In Fig. 8, wherein this first pixel electrode 113 becomes the mirror image symmetry with these second pixel electrode, 123 along continuous straight runs.
Fig. 9 shows the another electrode structure top view that changes the pixel region of routine edge electric field drive type LCD according to first embodiment of the invention.In Fig. 9, wherein this first pixel electrode 113 vertically becomes the mirror image symmetry with this second pixel electrode 123.
Second embodiment
Figure 10 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of second embodiment of the invention.Consult Figure 10, in order to increase the aperture opening ratio and the penetrance of FFS type LCD, the active component array base board structure 101c of second embodiment of the invention, many gate lines 103 are perpendicular to one another with many data lines 107 and are crisscross arranged on first substrate 100, the zone of wherein a plurality of sub-pix zone definitions between gate line 103 and data line 107.Each sub-pix zone is divided into two field domains, and the electrode structure symmetry.Comparative electrode 105 is arranged on first substrate 100 in each sub-pix zone.Pixel electrode 133 is arranged on the comparative electrode 105, is separated with at least one insulation course therebetween.The first half of pixel electrode, it comprises many parallel horns, each strip electrode arm comprises first sections, second sections, reaches the 3rd sections, and wherein this first sections is from the horizontal by the θ angle, this second sections is from the horizontal by the angle, the 3rd sections is from the horizontal by the θ angle, and the θ angle is greater than the angle.The latter half of pixel electrode comprises many parallel horns, each strip electrode arm comprises first sections, second sections, reaches the 3rd sections, wherein first sections is from the horizontal by-θ angle, second sections is from the horizontal by- angle, the 3rd sections is from the horizontal by-θ angle, and the θ angle is greater than the angle.It should be noted that the first half of pixel electrode vertically becomes the mirror image symmetry with the latter half of pixel electrode.
The 3rd embodiment
Figure 11 shows the electrode structure top view according to the pixel region of the edge electric field drive type LCD of third embodiment of the invention.Consult Figure 11, in order further to increase the aperture opening ratio and the penetrance of FFS type LCD, the active component array base board structure 101d of third embodiment of the invention, the electrode structure of its pixel region comprises that many gate lines 203 are perpendicular to one another with many data lines 207 and is crisscross arranged on infrabasal plate the zone of wherein a plurality of sub-pix zone definitions between gate line 203 and data line 207.Comparative electrode 205 is arranged on the infrabasal plate in each sub-pix zone.Pixel electrode 213 is arranged on the comparative electrode 205, be separated with insulation course therebetween, wherein pixel electrode 213 comprises many parallel inclined electrode arm 213b, each strip electrode arm comprises the first sections 213b1, the second sections 213b2, reaches the 3rd sections 213b3, wherein the first sections 213b1 is from the horizontal by the θ angle, the second sections 213b2 is from the horizontal by the angle, and the 3rd sections 213b3 is from the horizontal by the θ angle, and the θ angle is greater than the angle.And, pixel electrode 213 also comprises a plurality of the 4th sections 213a1, it connects first sections 213b3 of odd number strip electrode arm and the 3rd sections 213b3 of even number strip electrode arm respectively, and a plurality of the 5th sections 213a2, it connects the 3rd sections 213b1 of odd number strip electrode arm and the first sections 213b1 of even number strip electrode arm respectively.The 4th sections 213a1 and the 5th sections 213a2 near and be parallel to each data line 207.More particularly, pixel electrode 213 is continuous S shape broken line structure.According to a preferred embodiment of the invention, roughly between 1 ° to 80 °, perhaps the scope at angle is roughly between 0 ° to 79 ° for the scope at θ angle.Because the folded θ angle of the 3rd sections 213b3 of inclined electrode arm and horizontal direction is greater than the angle, so can avoid the disclination effect.
Moreover, have between each the 4th sections 213a1 of pixel electrode 213 between the first opening 213c and each the 5th sections 213a2 and have the second opening 213c, to increase the penetrance of edge electric field drive type liquid crystal display.According to a preferred embodiment of the invention, the width range of first and second opening 213c is roughly between 0.1 μ m to 10 μ m.
Consult Figure 11 again, thin-film transistor element TFT is arranged at the staggered position of this gate line 203 and data line 207, and its structure comprises that grid 203, passage contacts 206a/ and drain and contact 206b with source/drain 204 and source electrode.Drain electrode contact 206b electrically connects by contact hole 209 and pixel electrode 213.And, can realize low driving voltage (V because the θ angle is designed to the angle greater than
Op) demand, and then reduce the shared area of thin-film transistor element TFT, therefore further improve its aperture opening ratio.
It should be noted that also can comprise alignment film (not shown) on the board structure 101d of third embodiment of the invention, it is formed on the pixel electrode 213, grind orientation with horizontal direction.
Though abovely disclose the present invention with reference to preferred embodiment; but and be used to limit scope of the present invention; those skilled in the art can be under the situation that does not break away from the spirit and scope of the present invention; the present invention is made amendment and changes, so protection scope of the present invention is as the criterion by subsidiary claim scope.
Claims (31)
1. LCD device comprises:
First substrate and second substrate are oppositely arranged and interval one specific range;
Liquid crystal layer, it is folded between described first substrate and described second substrate;
Many gate lines are perpendicular to one another with many data lines and are crisscross arranged on described first substrate, the zone of wherein a plurality of sub-pix zone definitions between described gate line and described data line; And
Comparative electrode, it is arranged on described first substrate in each described sub-pix zone;
First pixel electrode is arranged on the described comparative electrode, is separated with at least one insulation course therebetween;
Wherein said first pixel electrode comprises many parallel horns, and the described horn of each bar comprises first sections, second sections, reaches the 3rd sections;
Wherein said first sections is from the horizontal by the θ angle, and described second sections is from the horizontal by the angle, and described the 3rd sections is from the horizontal by the θ angle, and described θ angle is greater than described angle.
2. LCD device as claimed in claim 1 also comprises thin film transistor (TFT), and it is arranged at described gate line and the staggered position of described data line, and electrically connects with described first pixel electrode.
3. LCD device as claimed in claim 1, wherein, described first pixel electrode also comprises the two strip electrode parts that are parallel to described data line, one of them electrode partly connects described first sections of the described horn of each bar, and another electrode partly connects described the 3rd sections of the described horn of each bar.
4. LCD device as claimed in claim 1 also comprises:
Second pixel electrode is arranged on the described comparative electrode, is separated with at least one insulation course therebetween;
Wherein said second pixel electrode comprises many parallel horns, and the described horn of each bar comprises first sections, second sections, reaches the 3rd sections;
Wherein said first sections is from the horizontal by-θ angle, and described second sections is from the horizontal by- angle, and described the 3rd sections is from the horizontal by-θ angle, and described-θ angle is greater than described- angle.
5. LCD device as claimed in claim 4, wherein, described first pixel electrode vertically becomes the mirror image symmetry with described second pixel electrode.
6. LCD device as claimed in claim 4, wherein, described first pixel electrode becomes the mirror image symmetry with the described second pixel electrode along continuous straight runs.
7. LCD device as claimed in claim 1, wherein, described first pixel electrode is continuous S shape broken line structure or contrary S shape broken line structure.
8. LCD device as claimed in claim 1, wherein, described pixel electrode also comprises a plurality of the 4th sections, it connects the 3rd sections of the described horn of odd number bar and the 3rd sections of the described horn of even number bar respectively, and a plurality of the 5th sections, it connects first sections of the described horn of odd number bar and first sections of the described horn of even number bar respectively.
9. LCD device as claimed in claim 8 wherein, has between each described the 4th sections between first opening and each described the 5th sections and has second opening, to increase the penetrance of described LCD device.
10. LCD device as claimed in claim 9, wherein, the width range of described first opening and described second opening is roughly between 0.1 μ m to 10 μ m.
11. LCD device as claimed in claim 1, wherein, the scope at described θ angle is roughly between 1 ° to 80 °.
12. LCD device as claimed in claim 1, wherein, the scope at described angle is roughly between 0 ° to 79 °.
13. LCD device as claimed in claim 1 also comprises common electrode lines, it is parallel with described gate line, and connects the described comparative electrode in each described sub-pix zone.
14. LCD device as claimed in claim 1 wherein, also comprises alignment film on described first substrate, it is formed on described first pixel electrode, grinds orientation with horizontal direction.
15. a LCD device comprises:
First substrate and the second substrate subtend are provided with and interval one specific range;
Liquid crystal layer, it is folded between described first substrate and described second substrate;
Many gate lines are perpendicular to one another with many data lines and are crisscross arranged on described first substrate, the zone of wherein a plurality of sub-pix zone definitions between described gate line and described data line; And
Comparative electrode is arranged in each sub-pix zone on described first substrate;
Pixel electrode is arranged on the described comparative electrode, is separated with at least one insulation course therebetween;
Wherein said pixel electrode comprises many parallel horns, and each strip electrode arm comprises first sections, second sections, reaches the 3rd sections;
Wherein said first sections is from the horizontal by the θ angle, and described second sections is from the horizontal by the angle, and described the 3rd sections is from the horizontal by-θ angle, and described θ angle is greater than this angle; And
Wherein said pixel electrode also comprises a plurality of the 4th sections, it connects the 3rd sections of the described horn of odd number bar and the 3rd sections of the described horn of even number bar respectively, and a plurality of the 5th sections, it connects first sections of the described horn of odd number bar and first sections of the described horn of even number bar respectively.
16. LCD device as claimed in claim 15 also comprises thin film transistor (TFT), it is arranged at described gate line and the staggered position of described data line, and electrically connects with described pixel electrode.
17. LCD device as claimed in claim 15 wherein, has between each described the 4th sections between first opening and each described the 4th sections and has second opening, to increase the penetrance of edge electric field drive type liquid crystal display.
18. LCD device as claimed in claim 17, wherein, the width range of described first opening and described second opening is roughly between 0.1 μ m to 10 μ m.
19. LCD device as claimed in claim 15, wherein, the scope at described θ angle is roughly between 1 ° to 80 °.
20. LCD device as claimed in claim 15, wherein, the scope at described angle is roughly between 0 ° to 79 °.
21. LCD device as claimed in claim 15 also comprises common electrode lines, it is parallel with described gate line, and connects the described comparative electrode in each described sub-pix zone.
22. LCD device as claimed in claim 15 wherein, also comprises alignment film on described first substrate, it is formed on the described pixel electrode, grinds orientation with horizontal direction.
23. LCD device as claimed in claim 15, wherein, described the 4th sections and described the 5th sections are parallel to the described data line of each bar.
24. a LCD device, it comprises:
First substrate and second substrate are oppositely arranged and interval one specific range;
Liquid crystal layer, it is folded between described first substrate and described second substrate;
Many gate lines are perpendicular to one another with many data lines and are crisscross arranged on described first substrate, the zone of wherein a plurality of sub-pix zone definitions between described gate line and described data line; And
Comparative electrode is arranged on described first substrate in each sub-pix zone;
Pixel electrode is arranged on the described comparative electrode, is separated with at least one insulation course therebetween;
Wherein this pixel electrode has first, it comprises many parallel horns, each strip electrode arm comprises first sections, second sections, reaches the 3rd sections, and wherein said first sections is from the horizontal by the θ angle, described second sections is from the horizontal by the angle, described the 3rd sections is from the horizontal by the θ angle, and described θ angle is greater than described angle; And
Wherein said pixel electrode has second portion, it comprises many parallel horns, each strip electrode arm comprises first sections, second sections, reaches the 3rd sections, and wherein said first sections is from the horizontal by-θ angle, described second sections is from the horizontal by- angle, described the 3rd sections is from the horizontal by-θ angle, and described-θ angle is greater than described- angle.
25. LCD device as claimed in claim 24, wherein, the first of described pixel electrode vertically becomes the mirror image symmetry with the second portion of described pixel electrode.
26. LCD device as claimed in claim 24 comprises that also thin film transistor (TFT) is arranged at described gate line and the staggered position of described data line, and electrically connects with described first pixel electrode.
27. LCD device as claimed in claim 24, wherein, described pixel electrode comprises that also two strip electrode partial parallels are in described data line, one of them electrode partly connects described first sections of the described horn of each bar, and another electrode partly connects described the 3rd sections of the described horn of each bar.
28. LCD device as claimed in claim 24, wherein, the scope at described θ angle is roughly between 1 ° to 80 °.
29. LCD device as claimed in claim 24, wherein, the scope at described angle is roughly between 0 ° to 79 °.
30. LCD device as claimed in claim 24 also comprises common electrode lines, it is parallel with described gate line, and connects the described comparative electrode in each described sub-pix zone.
31. LCD device as claimed in claim 24 wherein, also comprises alignment film on described first substrate, it is formed on the described pixel electrode, grinds orientation with horizontal direction.
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| CNB2006101290897A CN100495180C (en) | 2006-09-07 | 2006-09-07 | Liquid crystal display device |
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| CNB2006101290897A CN100495180C (en) | 2006-09-07 | 2006-09-07 | Liquid crystal display device |
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| CN100495180C CN100495180C (en) | 2009-06-03 |
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