CN101132014A - Image sensing device and manufacturing method thereof - Google Patents

Abstract

An image sensing device includes a substrate, at least one optical element, at least one dielectric layer and at least one waveguide disposed above the optical element. The side wall of the waveguide is provided with an optical barrier layer and a filling layer is embedded in the waveguide. Therefore, the optical path can be effectively shortened, light can be concentrated, and the crossing phenomenon between different optical paths can be avoided to improve the sensitivity of the image sensing device.

Description

Image sensing device and manufacturing method thereof

technical field

The invention relates to an image sensing device with a waveguide and a manufacturing method thereof.

Background technique

Complementary metal-oxide-semiconductor transistor image sensor (CMOS image sensor, CIS) is a common image sensing device today, and because CIS can be integrated in traditional semiconductor process, it has low manufacturing cost and low device size. Smaller and higher integration (integration) advantages. In addition, CIS also has the advantages of low operating voltage, low power consumption, high quantum efficiency, low noise (read-out noise), and random access as needed, so it has been widely used in personal computer cameras ( PC camera) and digital camera (digital camera) and other electronic products.

A typical CIS structure can be divided into a photo-sensing area and a peripheral circuit area according to its function. The photo-sensing area is usually provided with a plurality of photodiodes arranged in an array, and reset transistors (reset transistors) are arranged respectively. ), current source follower, row selector and other MOS transistors are used to receive external light and sense the intensity of light, while the peripheral circuit area is used to connect the internal metal interconnection in series lines and external connections. The photosensitive principle of CIS is to distinguish the incident light into various combinations of light of different wavelengths, which are then received by multiple photosensitive elements on the semiconductor substrate and converted into digital signals of different strengths. For example, the incident light is divided into a combination of red, blue and green light, which is then received by the corresponding photodiode and then converted into a digital signal. In addition, the photodiode mainly processes signal data according to the photocurrent generated by the photosensitive region, for example, the photocurrent (light current) generated by the photosensitive region in the light-receiving state represents a signal (signal), and the photosensitive region The dark current (dark current) generated in the non-light state represents noise (noise), so the photodiode can use the strength of the signal-to-noise ratio to process the signal data, and transfer the compared signal data to the peripheral circuit area transmission.

Please refer to FIG. 1. FIG. 1 is a schematic diagram of a traditional CIS structure, including a semiconductor substrate 10, on which a plurality of photodiodes 11, 12, 13 and a plurality of shallow trench isolations (shallow trench isolation, STI) 14 are arranged to separate the photodiodes 11. , 12, 13 to define a pixel array, wherein the photodiodes 11, 12, 13 respectively include an n-type dopant region 16 and a p-type dopant region 17, as elements for sensing the intensity of the external light source. In addition, in order to establish a complete CIS structure, the surface of the semiconductor substrate 10 is provided with multiple dielectric layers and multiple metal interconnects (multilevel interconnects), such as an interlevel dielectric layer (interlevel dielectric layer) 20 and a two-layer intermetallic interconnect. Electrical layers (intermetaldielectric layer, IMD) 22, 24, and a plurality of metal wires 23, 25 are disposed between the intermetal dielectric layers 22, 24.

However, as shown in FIG. 1 , when an incident ray 32 from an external light source 30 is incident on the photodiode 12 at a nearly vertical angle, and causes related electronic signal transmission; but also a scattered ray 34 from the external light source 30, It is first irradiated to the metal wire 25 and reflected on the surface, and then incident to another photodiode 13 adjacent to the photodiode 12, so the so-called crosstalk effect (crosstalk effect) occurs, so that the original light-free state The photodiode 13 is interfered by the scattered light 34 , so that the signal-to-noise ratio of the photodiode 13 cannot be improved, which significantly affects the sensitivity of the CIS in terms of photosensitive function.

In order to improve the crossover interference phenomenon that occurs between the photodiodes of the traditional CIS, US Patent No. US 6,861,866 proposes an improved CIS structure, as shown in Figure 2. FIG. 2 is a schematic diagram of the improved CIS structure proposed by US Patent No. US 6,861,866, which can be roughly divided into a photo-sensing area 40 on the left and a metal interconnection circuit area 42 on the right. The CIS structure includes A substrate 44, a multi-layer intermetal dielectric layer (IMD) 46 and a multi-layer diffusion barrier layer (diffusion barrier layer) 48 to prevent the diffusion of metal atoms are alternately stacked on the top of the substrate 44, wherein the metal interconnection circuit area 42 includes The multi-layer copper metal wire 50 is responsible for electrically connecting the corresponding gate 52 and the source/drain 54 to control the transmission of the CIS signal; and the photosensitive area 40 includes a photodiode 56, a Optical channel (light passageway) 58 is arranged on the top of photodiode 56, multilayer metal barrier layer (metal barrier) 60 forms an inner wall surface 62 of optical channel 58 together, and a protective layer 64 for blocking crossing interference phenomenon is arranged on optical The inner wall surface 62 surface of the channel 58 covers the surface of the intermetallic dielectric layer 46, a transparent filler layer (transparent filler) 66 fills the optical channel 58, a color filter 68 covers the surface of the transparent filler layer 66 and a micro-condenser (microlens) 70 is disposed above the optical channel 58 . However, due to the relationship of the process, the inner wall surface 62 of the optical channel 58 is connected up and down by the metal barrier layer 60 defining the position of the optical channel 58 in each dielectric layer 46, so the inner wall surface 62 of the optical channel 58 is a discontinuous surface, this will make part of the light irradiated to the inner wall surface 62 of the optical channel 58 easy to scatter, and cannot completely and smoothly reach the photodiode 56 below the optical channel 58, and relatively cause the number of effective light rays that the photodiode 56 can receive to be greatly reduced. reduce.

In addition, another U.S. Patent No. US 6,969,899 also discloses a similar CIS structure, as shown in FIG. 3 , which includes a substrate 72 with a plurality of photodiodes 74 arranged on the surface of the substrate 72, and a plurality of shallow trench isolations 76 interleaved with the photodiodes 74. In between, a multilayer first dielectric layer 78 overlies the substrate 72 , and a plurality of optical channels 80 directly to the photodiodes 74 . Wherein, each optical channel 80 is filled with a second dielectric layer 82 , and the inner wall surface of each optical channel 80 is formed with a third dielectric layer 84 to prevent crossover interference. However, since the disclosed optical channel 80 is directly connected to the photodiode 74, in an actual process, when the optical channel 80 is etched, the surface of the photosensitive area of the photodiode 74 is very vulnerable to plasma damage ( Plasma damage) and the contamination of impurity residues will produce a large number of surface defects, increase the leakage current and cause noise, so that the light-sensing effect of the photodiode 74 will decrease.

Contents of the invention

Therefore, the main objective of the present invention is to provide an image sensing device with a waveguide and a manufacturing method thereof, which can effectively avoid crossover interference and greatly improve the sensitivity of the image sensing device.

According to the present invention, an image sensing device is disclosed, comprising a substrate having at least one optical element, at least one dielectric layer disposed on the substrate, and at least one wave-guide tube disposed in the dielectric layer . The side wall of the waveguide has a flat surface, and the waveguide corresponds to the optical element and is at a predetermined distance from the optical element, and the waveguide includes a filling layer embedded in the dielectric layer and a The optical barrier layer of the sidewall of the filling layer, wherein the filling layer and the optical barrier layer have a reflection coefficient n ₂ and n ₃ respectively, and the reflection coefficient n ₂ of the filling layer is greater than the reflection coefficient of the optical barrier layer n ₃ .

According to the present invention, a manufacturing method of an image sensing device is also disclosed. First provide a substrate with at least one optical element, then form at least one dielectric layer on the substrate, and cover the optical element, and then form a groove in the dielectric layer, the groove corresponds to the The optical element, and the groove is separated from the optical element by a predetermined distance, then an optical barrier layer is formed on the inner wall surface of the groove, and finally a filling layer is formed to fill the groove to form a waveguide, wherein the The dielectric layer has a reflection coefficient n ₁ , the filling layer has a reflection coefficient n ₂ and the optical barrier layer has a reflection coefficient n ₃ , and the reflection coefficient n ₂ of the filling layer is greater than the reflection coefficient of the optical barrier layer n ₃ .

Because the bottom of the waveguide of the image sensing device of the present invention is a concave bottom surface with a focusing effect, and is separated from the optical element by a predetermined distance, so as to avoid surface defects of the optical element and increase the leakage current, and the inner wall of the waveguide has more An optical barrier layer can effectively avoid the spanning effect between different optical paths, and at the same time, the difference in refractive index between the optical barrier layer and the filling layer makes the non-perpendicularly incident light be totally reflected in the waveguide, resulting in the waveguide effect (wave-guide effect) ), so the lower optical element can collect more light, which can increase the photosensitive effect and sensitivity of the image sensing device. In addition, the filling layer in the waveguide can be directly made of dichroic film or color filter material, so as to shorten the light path and greatly improve the resolution of the image sensing device.

Description of drawings

FIG. 1 is a schematic diagram of a traditional CIS structure;

Figure 2 is a schematic diagram of the improved CIS proposed in US Patent No. US 6,861,866;

Figure 3 is a schematic diagram of another improved CIS proposed in US Patent No. US 6.969,899;

4 to 10 are process schematic diagrams of the image sensing device of the present invention;

Fig. 11 is a preferred embodiment disclosed by the present invention.

Description of main component symbols

10 semiconductor substrate 11, 12, 13 photodiodes

14 shallow trench isolation 16 n-type dopant region

17p-type dopant region 20 interlayer dielectric layer

22, 24 metal interconnection layer 23, 25 metal wire

30 external light source 32 incident light

34 scattered light 40 light sensing areas

42 peripheral circuit area 44 substrate

46 dielectric layer 48 diffusion barrier layer

50 copper metal wires 52 gates

54 source 56 photodiode

58 optical channels 60 metal barrier layers

62 inner wall surface 64 protective layer

66 transparent fill layers 68 color filters

70 Condenser 72 Bases

74 Photodiode 76 Shallow Trench Isolation

78 first dielectric layer 80 optical channels

82 second dielectric layer 84 third dielectric layer

100 base 105 insulation

106 optical components 107, 108, 109 metal wires

112 interlayer dielectric layer 114, 116, 118 intermetal dielectric layer

120 Groove 122 Concave Bottom

124 optical barrier layer 125 waveguide

126 filling layers 128 flat layers

130 Micro Condenser 200 Image Sensing Device

202 base 204 optical element

206 Insulator 208 Interlayer dielectric layer

210, 212, 214 intermetallic dielectric layer 215 waveguide

216 dielectric layer 217, 218, 219 metal wires

220 flat layer 222 micro condenser

224 optical barrier layer 226 filling layer

228, 229 rays

Detailed ways

In order to highlight the advantages and features of the present invention, a preferred embodiment of the present invention is listed below, and is described in detail in conjunction with the drawings as follows:

4 to 10 are process schematic diagrams of the image sensing device of the present invention. First please refer to FIG. 4 , a substrate 100 is provided, on which at least one optical element 106, at least one insulator 105 isolating the optical element 106, at least one interlevel dielectric layer (interlevel dielectric layer, ILD) 112, multilayer Intermetal dielectric layers (intermetal dielectric layer, IMD) 114, 116, 118 and a plurality of metal wires 107, 108, 109. In this preferred embodiment, the substrate 100 is a semiconductor substrate, but not limited to a silicon wafer (wafer) or a silicon-on-insulator (SOI) substrate; the optical element 106 can be a photodiode (photodiode), used for Receive external light and sense the intensity of light, and the optical element 106 is also electrically connected to a CMOS transistor (not shown) such as a reset transistor, a current sink element, or a column selection switch; the insulator 105 can be a shallow trench isolation (shallow trench isolation, STI) or local oxidation of silicon isolation layer (LOCOS), in order to prevent the optical element 106 from contacting with other elements and short circuit; the interlayer dielectric layer 112 can be a silicon oxide layer (silicon oxide) or a borophosposilicate glass (BPSG) layer, etc.; the intermetal dielectric layers 114, 116, 118 can be made of a silicon oxynitride layer (SiON) or a fluoride silicate glass (fluoride silicate glass, FSG) etc.; as for the metal wires 107, 108, 109 and the intermetal dielectric layers 114, 116, 118 that constitute multiple metal interconnects (multilevel interconnects), they can be fabricated by using a dual damascene process or an existing metal interconnect process. I won't go into details here.

As shown in FIG. 5, a patterned photoresist layer (not shown) is first formed on the surface of the intermetal dielectric layer 118, and then the patterned photoresist layer is used as a mask to Etching the IMD layer 114, 116, 118 above the optical element 106 to form a groove 120 in the IMD layer 114, 116, 118, and to generate a concave bottom surface 122 at the bottom of the groove 120 . Wherein, the diameter of the opening at the top of the groove 120 will naturally form slightly larger than the diameter of the bottom surface of the groove 120 due to etching, for example, the diameter of the bottom surface of the groove 122 is about 75% to 95% of the diameter of the opening, preferably 95%. % or more, try to keep the sidewall close to vertical, this funnel-shaped structure will facilitate the subsequent deposition process, and can effectively guide the incident light to the optical element 106 . In addition, the present invention can also use a dry etching process to etch the inter-metal dielectric layer 114, 116, 118 first, and then perform a wet etching process to etch the inter-layer dielectric layer 112 to produce the concave bottom surface 122, or as before The groove 120 with the concave bottom surface 122 is formed directly in the IMD layer 114 , 116 , 118 by controlling the parameters of the dry etching process. Since the groove 120 is obtained by directly etching multiple dielectric layers, the groove 120 has a straight inner sidewall, which does not cause non-directional scattering of light. In addition, the appearance of the groove 120 is not limited to the funnel-shaped structure shown in FIG. 122 can also be replaced by a plane or other light-concentrating bottom surface structures.

It should be noted that the concave bottom surface 122 of the groove 120 of the present invention is a predetermined distance from the optical element 106 . In this preferred embodiment, the predetermined distance is about the thickness of the interlayer dielectric layer 112 , that is, in this preferred embodiment, the intermetal dielectric layers 114 , 116 , 118 are etched to stop at the surface of the interlayer dielectric layer 112 . Moreover, this predetermined distance of the present invention also corresponds to the depth of etching of the groove 120, and can be appropriately adjusted depending on the specification requirements of each product or the radius of curvature of the concave bottom surface 122 and the shape of the photosensitive area. It is used to ensure that the concave bottom surface 122 acts on the focal length of the optical element 106 to improve the sensitivity of light sensitivity (sensitivity), and the predetermined distance can be used to ensure that the surface of the optical element 106 is not affected by external forces during the etching process or other subsequent processes. damage, thereby increasing the reliability of the image sensing device shown in the present invention.

Next, as shown in FIG. 6, a deposition process is used, such as a chemical vapor deposition (chemical vapor deposition, CVD) process, a high temperature deposition process, a plasma-assisted chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) process or a physical vapor deposition (physical vapor deposition) process. , PVD) process, etc., to form a flat optical barrier layer 124 covering the inner sidewall of the groove 120 , the concave bottom surface 122 and the surface of the intermetal dielectric layer 118 . It should be noted that, in this preferred embodiment, the reflection coefficient of the interlayer dielectric layer 112 and the intermetal dielectric layers 114 , 116 , 118 is greater than the reflection coefficient of the optical barrier layer 124 . For example, if the interlayer dielectric layer 112 and the intermetal dielectric layers 114, 116, 118 all have the same reflective index (reflective index, RI) n ₁ , and the optical barrier layer 124 has a reflective index n ₃ , then the layer The reflection coefficient n ₁ of the inter-dielectric layer 112 and the inter-metal dielectric layers 114 , 116 , 118 is greater than the reflection coefficient n ₃ of the optical barrier layer 124 . The material of the optical barrier layer 124 can be made of titanium oxide, silicon oxide or other materials whose reflectance value meets the aforementioned requirements. In addition, considering that metal itself has good optical reflection properties, the optical barrier layer 124 can also be replaced by a metal barrier layer to enhance the barrier effect of the optical barrier layer 124 .

As shown in FIG. 7 , an etch-back process is performed to remove the optical barrier layer 124 deposited on the surface of the intermetal dielectric layer 118 and the optical barrier layer 124 deposited on the concave bottom surface 122 , leaving only the optical barrier layer 124 deposited on the groove 120 A portion of the optical barrier layer 124 on the inner wall surface. Then as shown in Figure 8, a deposition process is carried out, such as spin coating (SOG), chemical vapor deposition (CVD) process, high temperature deposition process, plasma-assisted chemical vapor deposition (plasma enhanced chemical vapor deposition, PECVD) process or physical A filling layer 126 is formed on the surface of the intermetal dielectric layer 118 and the optical barrier layer 124 and fills up the groove 120 by a vapor deposition (PVD) process or the like. In this preferred embodiment, the filling layer 126 can be made of dichroic film materials such as titanium oxide or tantalum oxide, but the filling layer 126 is not limited to the dichroic film It can also use the raw materials of color filters, such as resins with colored dyes, colored photoresists or other inorganic compounds to make a color filter layer, or use other transparent materials that allow light to pass through Substance is used as the material of the filling layer 126 .

As shown in FIG. 9, a chemical mechanical polishing planarization process is performed to remove part of the filling layer 126 formed on the surface of the intermetal dielectric layer 118, so that the surface of the filling layer 126 is flush with the surface of the intermetal dielectric layer 118. flat. So far, the groove 120 , the optical barrier layer 124 and the filling layer 126 together constitute the waveguide 125 of the present invention.

It should be noted that, in this preferred embodiment, the filling layer 126 has a reflection coefficient n ₂ , and the reflection coefficient n ₂ of the filling layer 126 is greater than the reflection coefficient n ₃ of the optical barrier layer 124 . Therefore, when an incident ray hits the optical barrier layer 124, since the reflection coefficient n of the filling layer 126 _is greater than the reflection coefficient _n3 of the optical barrier layer 124, the non-perpendicular incident light will be totally reflected on the surface of the optical barrier layer 124, Then it reaches the optical element 106 to form a wave guide effect, without passing through the inter-metal dielectric layers 114 , 116 , 118 and the inter-layer dielectric layer 112 to cause the problem of crossover phenomenon.

As shown in FIG. 10 , a planarization layer 128 and a microlens 130 may be formed over the IMD layer 118 and the waveguide 125 . The flat layer 128 can protect the underlying intermetallic dielectric layers 114 , 116 , 118 , interlayer dielectric layer 112 , and waveguide 125 and form a flat surface, which facilitates the subsequent process of forming the micro-condenser lens 130 . The flat layer 128 can be a transparent film layer, such as a silicon oxide layer, transparent resin, glass or other materials with light-transmitting properties, and the micro-condenser 130 can be formed on the flat layer 128 by forming a patterned polymer. , and then through an annealing process, the polymer is formed into a micro-condenser lens 130 relative to the groove 120 to provide an effective light-condensing effect. In addition, considering the selected material properties of the filling layer 126, if the filling layer 126 selects a transparent material as its material, a color filter (not shown) can be arranged between the flat layer 128 and the micro-condenser 130 to select incident light. Kind of light.

The manufacturing method of the image sensing device described in the present invention can not only manufacture the image sensing device with a single waveguide, but also can manufacture the image sensing device including multiple waveguides. Please refer to FIG. 11. FIG. 11 is an image sensing device 200 disclosed in a preferred embodiment of the present invention, including a substrate 202, at least one optical element 204, at least one dielectric layer 216 covering the surface of the substrate 202 and at least one waveguide The tube 215 is disposed in the dielectric layer 216 . In this embodiment, the dielectric layer 216 includes at least one interlayer dielectric layer 208 and multiple intermetallic dielectric layers 210, 212, 214, and the intermetallic dielectric layers 210, 212, 214 are provided with a plurality of The metal interconnection wires (not shown) connected by the metal wires 217, 218, 219 are electrically connected to the optical element 204 or to an external circuit, and an insulator 206 is provided between the optical elements 204 to prevent the optical element 204 from contacting other elements. short circuit due to contact. The waveguide 215 included in the image sensing device 200 corresponds to each optical element 204, and each waveguide 215 includes an optical barrier layer 224 and a filling layer 226, wherein the waveguide 215 has a concave bottom surface, and the waveguide 215 The diameter of the opening will naturally be slightly larger than the diameter of the bottom surface due to the etching result, and the diameter of the bottom surface is about 75% to 95% of the diameter of the opening, preferably more than 95%. At the same time, there is a predetermined distance between the concave bottom surface of the waveguide 215 and the optical element 204 . In this embodiment, the predetermined distance is about the thickness of the interlayer dielectric layer 208 to ensure the reliability of the optical element 204 .

The image sensing device 200 further includes a planar layer 220 and at least one micro-condenser 222 disposed above the dielectric layer 216 and the waveguide 215 to protect the underlying dielectric layer 216 and the waveguide 215 and provide light concentrating. It is worth noting that the side wall of the waveguide 215 has a flat surface, so when there is an incident external light, it is less likely to cause non-directional scattering. In this preferred embodiment, the interlayer dielectric layer 208 and the metal layer The dielectric layers 210, 212, 214 all have the same reflection coefficient n ₁ , and the optical barrier layer 224 has a reflection coefficient n ₃ , wherein the reflection coefficient of the interlayer dielectric layer 208 and the intermetal dielectric layer 210, 212, 214 The coefficient n ₁ is greater than the reflection coefficient n ₃ of the optical barrier layer 224. Due to the difference in reflection coefficient, the light 229 from the outside passing through the intermetallic dielectric layer 214 to the optical barrier layer 224 will pass between the optical barrier layer 224 and the metal interlayer. The interface reflection of the electrical layer 214, and the filling layer 226 can have a reflection coefficient n ₂ , and the reflection coefficient n ₂ of the filling layer 226 is greater than the reflection coefficient n ₃ of the optical barrier layer 224; so when a light 228 strikes the optical barrier layer 224 When , since the reflection coefficient n ₂ of the filling layer 226 is greater than the reflection coefficient n ₃ of the optical barrier layer 224, the light 228 will be totally reflected on the surface of the optical barrier layer 224, without passing through the dielectric layer 216 and causing the phenomenon of crossing question. In addition, considering that the metal itself can cause good light reflection effect and light is difficult to pass through, the optical barrier layer 224 can also be replaced by a metal barrier layer to enhance the barrier effect of the optical barrier layer 224 . It is worth noting that the image sensing device 200 includes at least one optical element 204 and its corresponding waveguide 215, which can be adapted to fabricate an image sensing element with an optical array arrangement, such as a light-splitting or optical element having red, blue, green or other colors. The optical array with filtering effect can be applied in related electrical and electronic products.

To sum up, the present invention provides an image sensing device and its manufacturing method, which is characterized in that the concave bottom surface of the bottom of the waveguide is at a predetermined distance from the optical element, so as to improve the focusing effect and prevent the optical element from causing surface defects to increase Leakage current; the inner wall of the waveguide has an optical barrier layer, which can effectively avoid the crossing effect between different optical paths, and relatively greatly improve the sensitivity of the image sensing device; moreover, by virtue of the difference in refractive index, the optical barrier layer can The non-perpendicularly incident light is totally reflected in the groove to form a complete waveguide effect, so that the optical elements below can collect more light and increase the light-sensing effect of the image sensing device. In addition, the filling layer in the waveguide can be made directly from the material of dichroic film or color filter, so as to shorten the light path and improve the resolution of the image sensing device.

The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.

Claims (33)

1. image sensering device, it includes:

Substrate comprises at least one optical element;

At least one dielectric layer is located in this substrate and this dielectric layer has reflection coefficient n ₁

At least one waveguide is located in this dielectric layer, the sidewall of this waveguide have flat surface and this waveguide to should optical element and with this optical element at a distance of preset distance, and this waveguide comprises:

Packed layer is embedded in this dielectric layer, and this packed layer has reflection coefficient n ₂And

The optical barrier layer is located at the sidewall of this packed layer, and this optical barrier layer has reflection coefficient n ₃, and this reflection coefficient n of this packed layer ₂This reflection coefficient n greater than this optical barrier layer ₃

2. image sensering device as claimed in claim 1, wherein this waveguide has the matrix bottom surface.

3. image sensering device as claimed in claim 1, wherein this dielectric layer comprises at least one interlayer dielectric layer, and at least one metal intermetallic dielectric layer is arranged on this interlayer dielectric layer.

4. image sensering device as claimed in claim 3, wherein this preset distance is the thickness of this interlayer dielectric layer.

5. image sensering device as claimed in claim 1, wherein this reflection coefficient n of this dielectric layer ₁This reflection coefficient n greater than this optical barrier layer ₃

6. image sensering device as claimed in claim 1, wherein this packed layer is a dichroic coating.

7. image sensering device as claimed in claim 1, wherein this packed layer is a chromatic filter layer.

8. image sensering device as claimed in claim 1 also comprises micro-optical collector, is located at this waveguide top.

9. image sensering device as claimed in claim 1, wherein this optical element is a photodiode.

10. image sensering device as claimed in claim 1, wherein this image sensering device is the CMOS transistor image sensor.

11. the manufacture method of an image sensering device, this manufacture method comprises:

Substrate with at least one optical element is provided;

In this substrate, form at least one dielectric layer, and be covered in this optical element;

Form groove in this dielectric layer, this groove is corresponding to this optical element, and this groove and this optical element preset distance of being separated by;

Interior side-wall surface in this groove forms straight optical barrier layer; And

Form packed layer and fill up this groove, to form waveguide;

Wherein this dielectric layer has reflection coefficient n ₁, this packed layer has reflection coefficient n ₂And this optical barrier layer has reflection coefficient n ₃, and this reflection coefficient n of this packed layer ₂This reflection coefficient n greater than this optical barrier layer ₃

12. manufacture method as claimed in claim 11, wherein this dielectric layer comprises that at least one interlayer dielectric layer and at least one metal intermetallic dielectric layer are arranged on this interlayer dielectric layer.

13. manufacture method as claimed in claim 12, wherein this preset distance is the thickness of this interlayer dielectric layer.

14. manufacture method as claimed in claim 11, wherein this groove has the matrix bottom surface.

15. manufacture method as claimed in claim 14 wherein comprises in the method that the interior side-wall surface of this groove forms this optical barrier layer:

Carry out depositing operation, madial wall and this matrix bottom surface formation optical barrier layer in this dielectric layer surface with this groove; And

Carry out etch process, this optical barrier layer of part on this optical barrier layer of the part of etching deposit on this matrix bottom surface and this dielectric layer surface.

16. manufacture method as claimed in claim 11 wherein forms the method that this packed layer fills up this groove and comprises:

Carry out depositing operation, form this packed layer in this dielectric layer surface and fill up this groove; And

Carry out flatening process, remove this packed layer of part that is deposited on this dielectric layer surface, make this packed layer surface and this dielectric layer flush.

17. manufacture method as claimed in claim 16 wherein also comprises forming the technology of micro-optical collector in this waveguide top behind this flatening process.

18. manufacture method as claimed in claim 11, wherein this reflection coefficient n of this dielectric layer ₁This reflection coefficient n greater than this optical barrier layer ₃

19. an image sensering device, it includes:

Substrate comprises at least one optical element;

At least one dielectric layer is located in this substrate;

At least one waveguide is located in this dielectric layer, the sidewall of this waveguide have flat surface and this waveguide to should optical element and with this optical element at a distance of preset distance, and this waveguide comprises:

Filter layer is embedded in this dielectric layer; And

The metallic barrier layer is located at the sidewall of this filter layer.

20. image sensering device as claimed in claim 19, wherein this dielectric layer comprises at least one interlayer dielectric layer, and at least one metal intermetallic dielectric layer is arranged on this interlayer dielectric layer.

21. image sensering device as claimed in claim 20, wherein this preset distance is the thickness of this interlayer dielectric layer.

22. image sensering device as claimed in claim 19, wherein this waveguide has the matrix bottom surface.

23. image sensering device as claimed in claim 19, wherein this filter layer is a dichroic coating.

24. image sensering device as claimed in claim 19 also comprises micro-optical collector, is located at this waveguide top.

25. image sensering device as claimed in claim 19, wherein this optical element is a photodiode.

26. image sensering device as claimed in claim 19, wherein this image sensering device is the CMOS transistor image sensor.

27. the manufacture method of an image sensering device, this manufacture method comprises:

Substrate with at least one optical element is provided;

In this substrate, form at least one dielectric layer, and cover this optical element;

Form groove in this dielectric layer, this groove is corresponding to this optical element, and this groove and this optical element preset distance of being separated by;

Interior side-wall surface in this groove forms the straight metallic barrier layer;

Form filter layer and fill up this groove, to form waveguide.

28. manufacture method as claimed in claim 27, wherein this dielectric layer comprises at least one interlayer dielectric layer, and at least one metal intermetallic dielectric layer is arranged on this interlayer dielectric layer.

29. manufacture method as claimed in claim 28, wherein this preset distance is the thickness of this interlayer dielectric layer.

30. manufacture method as claimed in claim 27, wherein this groove has the matrix bottom surface.

31. manufacture method as claimed in claim 30 wherein comprises in the method that the interior side-wall surface of this groove forms this metallic barrier layer:

Carry out depositing operation, madial wall and this matrix bottom surface formation metallic barrier layer in this dielectric layer surface with this groove; And

Carry out etch process, this metallic barrier layer of part on this metallic barrier layer of the part of etching deposit on this matrix bottom surface and this dielectric layer surface.

32. manufacture method as claimed in claim 27 wherein forms the method that this filter layer fills up this groove and comprises:

Carry out depositing operation, form this filter layer in this dielectric layer surface and fill up this groove; And

Carry out flatening process, remove this filter layer of part that is deposited on this dielectric layer surface, make this filter layer surface and this dielectric layer flush.

33. manufacture method as claimed in claim 32 wherein also comprises forming the technology of micro-optical collector in this waveguide top behind this flatening process.

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