CN101101861A - Substrate processing apparatus and substrate processing method - Google Patents
Substrate processing apparatus and substrate processing method Download PDFInfo
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- CN101101861A CN101101861A CNA2007101367018A CN200710136701A CN101101861A CN 101101861 A CN101101861 A CN 101101861A CN A2007101367018 A CNA2007101367018 A CN A2007101367018A CN 200710136701 A CN200710136701 A CN 200710136701A CN 101101861 A CN101101861 A CN 101101861A
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Abstract
There is provided a substrate processing apparatus which can process a substrate by using an electrolytic processing method, while reducing a load upon a CMP processing to the least possible extent. The substrate processing apparatus of the present invention includes: an electrolytic processing unit (36) for electrolytically removing the surface of the substrate W having a to-be-processed film formed in said surface, said unit including a feeding section (373) that comes into contact with said surface of the substrate W; a bevel-etching unit (48) for etching away the to-be-processed film remaining unprocessed at the portion of the substrate that has been in contact with the feeding section (373) in the electrolytic processing unit (36); a chemical mechanical polishing unit (34) for chemically and mechanically polishing the surface of the substrate.
Description
The application is that the national applications submitted on May 16th, 2003 number is that 03811301.5 (PCT/JP03/06130), denomination of invention are divided an application for " substrate processing apparatus and substrate processing method ".
Technical field
The present invention relates to a kind of substrate processing apparatus and a kind of substrate processing method, more particularly, the present invention relates to can be used for substrate processing apparatus and substrate processing method that the Heat Conduction Material that is formed on the substrate surface on the semiconductor wafer is particularly processed.
The invention still further relates to such substrate processing apparatus and substrate processing method, wherein be used for embedding interconnection structure, be used for for example substrate surface interconnection of semiconductor wafer by for example metal such as copper or silver being embedded into form in the tiny groove.In addition, the present invention relates to be included in and form diaphragm on the embedding interconnect surface of such formation and protect the substrate processing method of this interconnection and the semiconductor device by this method processing.
Background technology
In recent years, replace to use aluminium or aluminium alloy material, have very main trend use copper (Cu) with low-resistivity and high electromigration intensity as formation interconnection circuit on as the substrate of semiconductor wafer.Copper-connection spare usually is formed on by copper is loaded into that tiny groove forms on the substrate surface.Have known various technology to be used to form this copper-connection spare, these technology comprise chemical vapor deposition, sputter and plating.According to any such technology, on the almost whole surface of substrate, form copper film, remove unnecessary copper by chemico-mechanical polishing (CMP) then.
Formed by this process in the situation of cross tie part, this embedding cross tie part has exposed surface after smooth processing.When other embedding interconnection structure is formed on such Semiconductor substrate interconnection exposed surface, may run into following problem.For example, in forming the next process of interlayer dielectric film, forming new SiO
2Isolate during the interlayer, this exposed surface that is pre-formed cross tie part may be oxidized.In addition, be used to form the SiO of through hole
2After the layer etching, resist that is pre-formed etched dose of cross tie part possibility, peels off that is exposed to this via bottoms or the like pollutes.
For fear of this problem, traditionally, not only exposing on the Semiconductor substrate formation circuit region on this cross tie part surface but also on the whole surface of this substrate, forming silicon nitride or the like diaphragm, thereby stoping etched dose of this exposure cross tie part or the like to pollute.
Yet; in having the semiconductor device that embeds the cross tie part structure; on the whole surface of Semiconductor substrate, provide SiN or the like diaphragm to increase the dielectric constant of insulating film of intermediate layer; therefore even when the low resistivity material that uses copper for example or silver is used for cross tie part, just increased interconnect delay, thereby this performance of semiconductor device is possible weakened.
Given this; proposed to use selectively diaphragms such as Co (cobalt), Co alloy, Ni (nickel) or Ni alloy to cover on this exposure cross tie part surface; wherein these materials have the performance that can stick to copper for example or silver well; have low-resistivity (ρ) simultaneously, for example obtain alloy firm by electroless plating.
Figure 1A shows with process sequence to 1F and forms this example with semiconductor device of copper-connection spare.Shown in Figure 1A, SiO for example
2The dielectric film 2a of perhaps low-k material is deposited on the conductive layer 1a that forms half device, and wherein this conductive layer 1a is formed on the semiconductor base portion 1.Contact hole 3 and interconnection channel 4 are formed in the dielectric film 2a by photoetching technique/etching technique.Thereafter, the barrier layer 5 of TaN or the like is formed on this whole surface, and the crystal grain layer 6 that is used to electroplate as power supply layer simultaneously is formed on this barrier layer 5 by sputter or the like.
Then, shown in Figure 1B, on the surface of this substrate W, carry out copper facing, load this contact hole 3 and this interconnection channel 4 with copper, simultaneously, depositing copper film 7 on this dielectric film 2a.After this, this barrier layer 5 on this dielectric film 2a, this crystal grain layer 6 and this copper film 7 are removed by chemico-mechanical polishing (CMP), so that make these copper film 7 surfaces surperficial and this dielectric film 2a that are filled in this contact hole 3 and this interconnection channel 4 be in same level basically.Therefore formed the cross tie part of forming by this crystal grain layer 6 and this copper film 7 (copper-connection spare) 8 shown in Fig. 1 C.
Then, shown in Fig. 1 D, on this substrate surface, carry out electroless plating, on the surface of cross tie part 8, forming selectively as the protective layer 9 of Co alloy or Ni alloy, thereby with these diaphragm 9 coverings with protected this exposed surface of cross tie part 8.After this, shown in Fig. 1 E, as SiO
2Perhaps the dielectric film 2b of SiOF appends on the surface of this substrate W.Then, shown in Fig. 1 F, the surface of this dielectric film 2b is flattened, to form multilayer interconnect structure.
It is more accurate that parts in various types equipment become recently, needs degree of precision simultaneously.Owing to use the sub-micron manufacturing technology usually, therefore, material property mainly is subjected to the influence of this processing method.In this case, in this traditional processing method, wherein destroyed physically by instrument and remove, formed many defectives, this workpiece performance is reduced from its surface in the needs part of workpiece.Therefore, to process under this material property situation be very important not reducing.
The processing method of for example chemical polishing, Electrolyzed Processing and electrobrightening is developed, so that address these problems.Compare with traditional Physical Processing, these methods are removed processing or the like by the chemolysis reaction.Therefore, these methods do not have to be perplexed because forming the defective of change layer that plastic deformation causes and tomography, thereby can process not reducing under this material property situation.
For example chemico-mechanical polishing (CMP) needs complicated operations and control usually, needs quite long process time simultaneously.In addition, the abundant cleaning of substrate must be carried out after polishing.This has also increased considerable burden in feed liquid or cleaning liquid waste processing.Therefore, need fully remove CMP especially or on CMP, reduce burden.Equally in this respect, although it is pointed out that from now on and mainly to adopt the low-k material with low-k as this insulating film material, this low-k material has low mechanical strength, therefore is difficult to bear the stress that acts on during CMP processing.Therefore, on this point, see equally, need and to carry out smooth to substrate under any stress situation not producing.
In addition, what reported is that carrying out CMP processing simultaneously in plating is the chemical machinery electrolytic polishing method.According to this method, on the plated film growing surface, carry out machining, but produced the problem that forms the film sex change.
On the other hand; be deposited on excess metal on this substrate W surface and this surface flattened and formed this cross tie part 8 by chemical mechanical polishing (CMP) or the like by removal; and when this diaphragm 9 is formed on the surface of this cross tie part 8 selectively; as mentioned above, this diaphragm 9 stretches out from this surface that flattens.After this dielectric film 2b back deposition, be formed on along with this diaphragm 9 irregular on the surface of this dielectric film 2b, this makes this poor surface finish.This for example may cause in the lithography process out-focus that is used for forming on the upper strata cross tie part, and may this cross tie part be disconnected or short circuit, and the LSI that makes on the substrate surface of for example semiconductor wafer or the like performance is had a negative impact.Therefore need other smooth processing, to guarantee on this dielectric film 2b surface, having enough fineness.
By the way be, as shown in Figure 2, when by on the surface of this substrate W, carrying out plated film when forming copper film 7, wherein on this surface, have micropore 3a that diameter d 1 is about 0.2 μ m and the wide groove 4b of the promptly about 100 μ m of width d2, even work as plating bath or be contained in the best resultsization of this plating bath inner additive, plated film growth may be accelerated at this micropore 3a upper part, and this copper film 7 raises in this part whereby, and the growth with plated film of enough high plane performance can not form in wide groove 4b.This causes having difference (protuberance) " a+b " being deposited on this substrate W copper film 7 planes, and promptly the height " a " of raised portion adds the degree of depth " b " at this sunk part above wide groove 4b on play hole 3a.Therefore, in order to obtain the hope flat surface of substrate W, micropore 3a and this wide groove 4b fully are full of copper simultaneously, are necessary to provide in advance to have the copper film of big thickness sufficiently, and remove the redundance that is equivalent to above-mentioned difference " a+b " by CMP and remove on this height.
Yet in the CMP of plated film processing, the big thickness of this plated film needs bigger polished amount, causes prolong process time.Increasing CMP speed can make during CMP processing in wide groove inner fovea part increase to avoid prolong process time.In addition, because CMP is used to the feed liquid of polishing, the cross pollution between feed liquid and plating bath becomes problem.In addition, because the rubber-like polishing pad contacts with substrate in CMP processing, just can not remove the raised portion of this substrate selectively.
In order to address these problems, must make coating film thickness thin as far as possible, even simultaneously when micropore and wide groove are present on the substrate surface jointly, also will eliminate this raised portion and recess, thereby improve this fineness.Yet,, when use is carried out electrolytic film plating as the copper sulphate electroplating bath, only under the effect of this plating bath or additive, can not reduce this raised portion simultaneously and reduce this recess at present.By using the interim contrary power supply or the PR pulse power, may reduce this raised portion as plated film power supply during thin film deposition.Yet this method is not effectively in reducing this recess, reduces the film surface quality in addition.
Summary of the invention
In view of the problems referred to above of the prior art propose the present invention.Therefore, first purpose of the present invention provides so a kind of substrate processing apparatus and a kind of substrate processing method, wherein come process substrate by using electrochemical machining method simultaneously the load in CMP processing to be reduced to minimum possible degree, and can be processed into flat surface to the electric conducting material that is arranged on the substrate surface, removal (cleaning) simultaneously is attached to the impurity on this substrate surface.
Second purpose of the present invention provides a kind of like this substrate processing method; wherein this method can form diaphragm selectively on the cross tie part surface; to protect this cross tie part; and can guarantee to be deposited on dielectric film on the substrate surface of this formation diaphragm or the like and have enough fineness; thereby do not need the surperficial other course of processing that flattens of this dielectric film or the like, the present invention also provides the semiconductor device by this processing method processing simultaneously.
Another object of the present invention provides a kind of like this substrate processing apparatus and substrate processing method, even wherein when being present on this substrate surface jointly as the micropore of cross tie part recess, wide groove or the like, equipment of the present invention and method also can provide the processing back substrate with excellent surface fineness.
To achieve these goals, the invention provides a kind of substrate processing apparatus, comprising: the load/unload section that is used to be written into and carry out substrate; Be used for removing by electrolysis the Electrolyzed Processing unit of substrate surface, be formed with film to be processed in this substrate surface, described Electrolyzed Processing unit comprises the feeder section that contacts this substrate surface; Etching unit, this unit are used to etch away such part, this part be this substrate with feeder section contact portion in this Electrolyzed Processing unit on the unprocessed film to be processed of maintenance; Chemico-mechanical polishing unit, this unit are used for chemically and mechanically polishing this substrate surface that has etched away this film to be processed; And the transfer equipment that is used in this substrate processing apparatus, transmitting this substrate.
Fig. 3 and 4 shows the principle of the Electrolyzed Processing according to the present invention.Fig. 3 shows a kind of like this ionic condition, promptly the ion-exchanger 12a on being installed in machined electrode 14 contacts with ion-exchanger 12b on being installed in feed electrode 16 or during near workpiece 10 surfaces, voltage is applied between this machined electrode 14 and this feed electrode 16 via power supply 17 simultaneously, and is provided between this machined electrode 14, this feed electrode 16 and this workpiece 10 from liquid supply section 19 as the liquid 18 of ultra-pure water.Fig. 4 shows a kind of like this ionic condition, when i.e. contact of ion-exchanger 12a on being installed in machined electrode 14 or close workpiece 10 surfaces and feed electrode 16 directly contact this workpiece 10, voltage is applied between this machined electrode 14 and this feed electrode 16 via power supply 17 simultaneously, and is provided between this machined electrode 14 and this workpiece 10 from liquid supply section 19 as the liquid 18 of ultra-pure water.
When use resemble ultra-pure water those when itself having the liquid of big resistivity, this ion-exchanger 12a is contacted with the surface of this workpiece 10.This can reduce resistance, reduction needs voltage and reduces power consumption." contact " in the Electrolyzed Processing here do not mean that for as the workpiece in CMP on " pressure " of physical energy (stress) is provided.
Hydrone 20 in the liquid 18 of for example ultra-pure water is decomposed into hydroxide ion 22 and hydrogen ion 24 effectively by using ion-exchanger 12a, 12b.For instance, by electric field between this workpiece 10 and this machined electrode 14 and flowing by liquid 18, so this hydroxide ion 22 that produces is brought on workpiece 10 surfaces relative with this machined electrode 14, near this workpiece 10 hydroxide ion 22 density increase whereby, and this hydroxide ion 22 reacts with the atom 10a of this workpiece 10 simultaneously.The reaction product 26 that produces by this reaction is dissolved in this liquid 18, and by removing from this workpiece 10 along flowing of workpiece 10 liquid on surface 18.Realized the removal processing on these workpiece 10 surfaces.
From the above, the removal processing according to this processing method only realizes by the interaction of the electrochemistry between reactant ion and workpiece.Therefore, on process principle, this Electrolyzed Processing is different with CMP according to following principle significantly, wherein in CMP, by the chemical interaction between interaction of the physics between grinding agent and the workpiece and the chemical substance in polishing liquid is combined, realize processing.According to said method, processing work 10 is towards the part of machined electrode 14.Therefore, by moving this machined electrode 14, this workpiece 10 is processed into the surface state of wanting.
As mentioned above, electrolysis is removed processing only by realizing owing to the interactional solubilizing reaction of electrochemistry, this Electrolyzed Processing is significantly with different according to the CMP process principle, wherein in CMP, by the chemical interaction between interaction of the physics between grinding agent and the workpiece and the chemical substance in polishing liquid is combined, realize processing.Therefore, this Electrolyzed Processing can not weaken the removal processing of carrying out surface of the work under the workpiece material performance situation.Even have lower mechanical strength when workpiece material, for example above-mentioned low-the k material, then the removal of this surface of the work processing also can realize under the situation of workpiece not being had any physical damage.In addition, compare as traditional Electrolyzed Processing of Working liquids with the use electrolytic solution, by use have the liquid that is no more than 500 μ s/cm, preferably pure water, more preferably ultra-pure water is as the processing Working liquids, just can reduce the pollutant on the surface of the work significantly, and dispose waste liquid easily in this processing back.
Directly contact in the situation of this workpiece 10 (referring to Fig. 4) at feed electrode 16, in fact can not be machined electrode 14 near on these workpiece and the part that this feed electrode 16 contacts.Therefore, that part that can not processing work 10.Given this, can consider machined electrode 14 is placed (referring to Fig. 3) with feed electrode 16 relative these workpiece 10, and make this feed electrode 16 and this workpiece 10 produce relative motion, thereby this workpiece 10 can be processed in whole surface.Yet in this case, this feed electrode 16 must contact with these workpiece 10 surfaces all the time, needs equipment to have complicated structure like this.According to substrate processing apparatus of the present invention, the etching unit is provided, this unit is used for directly contacting under the situation with this workpiece 10 at this feed electrode 16 keeping unprocessed film to be processed to etch away on substrate surface, can etch away to keep unprocessed film to be processed (on this workpiece 10).Can therefore increase the degree of freedom that electric power is provided to these workpiece 10 upper types.Preferably, this feed electrode 16 contacts other zones except nmosfet formation region, for example peripheral region of this workpiece 10 with this workpiece 10.
In the preferred embodiment of the present invention, this Electrolyzed Processing unit comprises: can near or contact the machined electrode of this substrate; Be used for electric power is provided to the feed electrode of substrate as feeder section, wherein ion-exchanger is arranged in this substrate and this machined electrode and this feed electrode between at least one; Be used between this machined electrode and this feed electrode, applying the power supply of voltage; And fluid supply section, this section is used for the fluid supply between at least one, is wherein placed ion-exchanger at this substrate and this machined electrode and this feed electrode betwixt.
Substrate processing apparatus can also comprise the one-tenth film unit that is used for forming film to be processed on this substrate surface.This one-tenth film unit is for example for being used for the film coating unit of plated film on this substrate surface.
This substrate processing apparatus also is included in the annealing unit and the cleaning unit that is used to clean this substrate that is used for after this one-tenth film unit is processed this substrate annealing.
The invention provides another kind of substrate processing apparatus, this equipment comprises: the load/unload section that is used to be written into and carry out substrate; Be used for removing the Electrolyzed Processing unit with the substrate surface that is formed on film to be processed wherein by electrolysis, described Electrolyzed Processing unit comprises the feeder section that contacts this substrate surface; Etching unit, this unit are used to etch away such part, this part be this substrate with feeder section contact portion in this Electrolyzed Processing unit on the unprocessed film to be processed of maintenance; And the transfer equipment that is used in this substrate processing apparatus transmitting this substrate, wherein this Electrolyzed Processing unit comprises: (i) can near or contact the machined electrode of this substrate; (ii) as the feed electrode that is used for electric power is provided to the feeder section of this substrate; (iii) be arranged in the ion-exchanger between at least one in this substrate and this machined electrode and this feed electrode; (iv) be used between this machined electrode and this feed electrode, applying the power supply of voltage; And (v) fluid supply section, this fluid supply section are used for pure water or have being no more than 500 μ s/cm conductivity liquid and supplying at this substrate and this machined electrode and this feed electrode between at least one, and this ion-exchanger is arranged in wherein simultaneously.
This substrate processing apparatus can also comprise the chemico-mechanical polishing unit, and this unit is used for chemically and mechanically this substrate surface being polished, and film wherein to be processed falls from this surface etch.
The invention provides a kind of substrate processing method, this method comprises: be formed on wherein to having that the substrate surface of film to be processed carries out Electrolyzed Processing, electricity supply element is contacted with this substrate surface; Etch away on this substrate and the part that this electricity supply element contacts and keep unprocessed film to be processed; And after this etching, chemically and mechanically polishing this substrate surface.
In the preferred embodiment of the present invention, this Electrolyzed Processing step comprises: make machined electrode near or contact this substrate, be provided to this substrate by feed electrode handle electric power simultaneously as electricity supply element; Ion-exchanger is arranged in this substrate and this machined electrode and this feed electrode between at least one; In this substrate and this machined electrode and this feed electrode between at least one, wherein this ion-exchanger is arranged in therebetween the fluid supply; And between this machined electrode and this feed electrode, apply voltage;
This film to be processed can be formed on before Electrolyzed Processing on the surface of this substrate.
The invention provides another kind of substrate processing method, this method comprises: be formed on wherein to having that the substrate surface of film to be processed carries out Electrolyzed Processing; And etch away on this substrate and the part that this electricity supply element contacts and keep unprocessed film to be processed, wherein this Electrolyzed Processing comprises: make machined electrode near or the contact substrate, be provided to substrate by feed electrode handle electric power simultaneously as electricity supply element; Ion-exchanger is arranged in this substrate and this machined electrode and this feed electrode between at least one; Pure water or have and be no more than 500 μ s/cm conductivity liquid supplies in this substrate and this machined electrode and this feed electrode between at least one, this ion-exchanger is arranged in wherein simultaneously; And between this machined electrode and this feed electrode, apply voltage.
The surface of this substrate can chemically and mechanically polished after etching.This film to be processed can be formed on before Electrolyzed Processing on the surface of this substrate.
The invention provides another kind of substrate processing method, this method comprises: the cross tie part material is embedded in the trickle groove of the cross tie part that is used for forming on substrate surface; Remove unnecessary cross tie part material and this substrate surface is flattened; Further remove this cross tie part material, thus the recess in the described trickle groove top that is formed for packing into; And form diaphragm selectively at this recess that is used to load.
According to this method, when this diaphragm is formed on the groove that is used to load when protecting this cross tie part surperficial selectively, the surface of this diaphragm can flush with the non-cross tie part region surface as dielectric film.This can stop the projection from this diaphragm of this flat surface to form, and has enough surface smoothnesses thereby assurance is deposited on dielectric film on the substrate surface or the like subsequently.
Preferably, this diaphragm is a multi-layer compound film.This laminated film can promptly be carried out the lamella of difference in functionality and forms by having different physical characteristics.For example, can use oxidation trapping layer that stops the cross tie part oxidation and the combination that stops the thermal diffusion trapping layer of cross tie part thermal diffusion.By utilizing this lamella can stop cross tie part oxidation and thermal diffusion simultaneously effectively as diaphragm.In this case, this thermal diffusion trapping layer can be by Co with excellent heat resistance or Co alloy composition, and this oxidation trapping layer can be by Ni with excellent anti-oxidation characteristics or Ni alloy composition.In addition, preferably, this oxidation trapping layer appends on the surface of this thermal diffusion trapping layer.Like this, by this thermal diffusion trapping layer surface is covered with this oxidation trapping layer, for example, in the oxidizing atmosphere that is used to form semiconductor device with multilayer interconnection part structure, in dielectric film (oxide-film) deposition, oxidation is stoped under not reduction of the effect situation, and the oxidation of cross tie part can be prevented from.
This diaphragm can be formed by electroless plating.The removal of this cross tie part material can be undertaken by chemico-mechanical polishing, chemical etching or Electrolyzed Processing.
In the preferred embodiment of the present invention, this Electrolyzed Processing operation comprises: make machined electrode near or contact this substrate, be provided to this substrate by feed electrode handle electric power simultaneously; Ion-exchanger is arranged in this substrate and this machined electrode and this feed electrode between at least one; In this substrate and this machined electrode and this feed electrode between at least one, wherein this ion-exchanger is arranged in therebetween the fluid supply; And between this machined electrode and this feed electrode, apply voltage.
Hydrone in the liquid of for example ultra-pure water is decomposed into hydroxide ion and hydrogen ion effectively by using ion-exchanger.For example, by electric field between this substrate and this machined electrode and flowing by this liquid, so the hydroxide ion that produces is brought on the substrate surface relative with this machined electrode, hydroxide ion density increases near this substrate whereby, and the atom of this hydroxide ion and this substrate reacts.Therefore realized the removal processing of substrate surface.
Preferably, this liquid is pure water or has the liquid that is no more than 500 μ s/cm conductivity.
Here, pure water is meant the water that is no more than 10 μ s/cm conductivity.Here, conductivity value is meant the respective value under 1atm, 25 degrees centigrade.By utilizing pure water can make cleaning processing not stay impurity on the machined surface of workpiece in Electrolyzed Processing, the cleaning step after this Electrolyzed Processing can be simplified whereby.Specifically, after this Electrolyzed Processing one or twice cleaning enough.
In addition, replace pure water or ultra-pure water, can also use such liquid equally, promptly by surfactant or the like is added to obtain in pure water or the ultra-pure water, have be no more than 500 μ s/cm conductivity, preferably be no more than 50 μ s/cm, more preferably be no more than the liquid of 0.1 μ s/cm.Because the existence of surfactant in pure water or ultra-pure water, this liquid can form such layer, this layer is used for being suppressed at equably interface ion migration between this substrate W and this ion-exchanger 369a, thereby make ion-exchange concentration (dissolving metal) moderate, improved the fineness of machined surface.
In the preferred embodiment of the present invention, this Electrolyzed Processing step comprises: make machined electrode near or contact this substrate, be provided to this substrate by means of feed electrode handle electric power simultaneously; Pure water or have be no more than 500 μ s/cm conductivity the liquid supply between this substrate and this machined electrode; And between this machined electrode and this feed electrode, apply voltage.
By electric field between this substrate and this machined electrode and flowing by this liquid, hydroxide ion is brought on the substrate surface relative with this machined electrode, hydroxide ion density increases near this substrate whereby, and the atom of this hydroxide ion and this substrate reacts.The reaction product that produces by this reaction is dissolved in this liquid, and by removing from this substrate along flowing of this substrate surface liquid.Therefore realized the removal processing of cross tie part material.
The invention provides a kind of semiconductor device, this semiconductor device comprises having the substrate that is used to form at the trickle groove of surperficial cross tie part, and described trickle groove is full of the cross tie part material, and diaphragm is formed on this cross tie part material surface simultaneously.
Preferably, this diaphragm is a multi-layer compound film.
The invention provides another substrate processing apparatus, this equipment comprises: the head section that is used to keep substrate; This substrate surface is electroplated to form the plated film section of electroplating metal film; The cleaning section that is used for this substrate of cleaning behind this plated film; And Electrolyzed Processing section, this section is used for that so described at least metal film on this substrate is carried out electrolysis and removes processing, promptly by voltage being applied between this substrate and this electrode making ion-exchanger be present between this substrate and the electrode after this cleaning and exist under the situation at liquid; Wherein this head section can move between this plated film section, this cleaning section and this electrolysis section, keeps this substrate simultaneously.
According to this substrate processing apparatus, this plated film, this cleaning and this Electrolyzed Processing can be carried out successively.Can repeat these processing.By carry out this plated film processing and this Electrolyzed Processing in different positions, can pre-determine process time and other processing conditions of the corresponding course of processing on demand, thereby make corresponding course of processing optimization.In addition, by this plated film section and this Electrolyzed Processing section are provided respectively, different liquid can not have to be used in two sections under the cross pollution situation.
Preferably, this cleaning section is arranged between this plated film section and this Electrolyzed Processing section.This can stop be used for this plated film section for example the liquid that has than high conductance of copper sulfate solution arrive this Electrolyzed Processing section.
This cleaning section can have remover liquid nozzle, also has the drying device of dry this substrate after cleaning simultaneously.The substrate that makes when being in drying regime after plated film or Electrolyzed Processing that provides of drying device turns back to box.
In a preferred embodiment of the invention, by supplying pure water, ultra-pure water or have the liquid that is no more than 500 μ s/cm conductivity between substrate behind the plated film and electrode, this Electrolyzed Processing section carries out Electrolyzed Processing.
In addition, at least repeatedly carry out twice at the plated film of this plated film section with in the Electrolyzed Processing of this Electrolyzed Processing section.
In a preferred embodiment of the invention, this plated film section plating bath supply section of comprising anode, being arranged in the ion-exchanger between this anode and this substrate and being used between this ion-exchanger and this substrate the supply plating bath.Like this, by between the anode of this this plated film section and this substrate, arranging ion-exchanger, plating bath from this plating bath supply section can be prevented from direct collision to this anode surface, thereby stops owing to this plating bath and outflow cause being formed on upsweeping of this anode surface black film.Preferably, this ion-exchanger has water penetration.For example, weaving or the nonwoven cloth of being made by ion-exchange fibre or perforated membrane can make liquid pass.
In a preferred embodiment of the invention, this head section comprises the feed contact element of energy opening/closing, and this element is used for the substrate preferred embodiment that remains on this head section lower surface is kept, and electric power is fed to this substrate.Preferably, this feed contact element is made up of a plurality of elements of arranging at certain intervals along this head section circumferencial direction, thereby can realize electric power is fed on this substrate, simultaneously substrate is stably remained on this head section.
Preferably, this feed contact element has the electricity supply element of being made up of metal, and this metal and the metal film on this substrate do not react.By utilizing this electricity supply element, can stop because the conductance that its oxidation causes reduces.
Preferably, this Electrolyzed Processing section has and is used for transducer that thickness of metal film on this substrate surface is surveyed.So just can monitor the progress of Electrolyzed Processing.
Each all has power supply this plated film section and this electrolytic film plating section.
In a preferred embodiment of the invention, this head section, this plated film section, this cleaning section and this Electrolyzed Processing section are installed in the machining cell.Preferably, this machining cell has and is used for inert gas is fed to inert gas supply section in this machining cell.Preferably, in this machining cell, encapsulate the supply of carrying out inert gas by inert gas to for example nitrogen.Word " encapsulation of inert gas " is meant that here machining cell is full of with the clean gas that band reduces particle.Specifically, higher slightly than external pressure by making the machining cell internal pressure, particle can stop from this outside and flow into this machining cell, and the particle that causes being attached to this substrate surface reduces.In addition, the encapsulation of inert gas can stop pure water dissolved oxygen concentration increase during Electrolyzed Processing.This will make the pure water steady quality, and be suppressed at during the Electrolyzed Processing generation from the bubble of pure water, thereby make the Electrolyzed Processing stable performance.
In a preferred embodiment of the invention, this Electrolyzed Processing section and this plated film section are connected on the common power supply, and this power supply can switchably be connected to this Electrolyzed Processing section or this plated film section by means of the power supply selector switch simultaneously.
The invention provides another substrate processing method, this method comprises: to the surface coating of substrate; After this plated film, this substrate is cleaned; And followingly carry out electrolysis and remove processing, promptly by make ion-exchanger be present between this substrate and electrode after this cleaning, and handle have be no more than 500 μ s/cm conductivity the liquid supply between this substrate and this electrode; Wherein this plated film, this cleaning and this Electrolyzed Processing repeat twice at least.
Like this, behind this substrate plated film, by have be no more than 500 μ s/cm conductivity have supply between the substrate and this electrode of this plated film, by carrying out Electrolyzed Processing, can remove the raised portion that is formed on substrate on this plated film effectively, the fineness of this substrate surface can be improved whereby.Like this, because it is different on resistance, having the liquid that is no more than 500 μ s/cm conductivity can not fully electrolytically decompose, and ionic current concentrates on the substrate raised portion of close or contact ions exchanger, and ionization simultaneously is on the metal film on this substrate (raised portion).Therefore, near or this raised portion of contacting this ion-exchange can remove effectively, the fineness of this substrate can improve whereby.Particularly when this liquid be conductivity when being no more than the pure water of 10 μ s/cm or conductivity and being no more than the ultra-pure water of 0.1 μ s/cm, can realize good Electrolyzed Processing, have the raised portion removal effect of enhancing.
In addition, by this substrate of cleaning behind plated film,, then can carry out Electrolyzed Processing (electrobrightening) under the pure water of low conductivity, ultra-pure water or the like the environment having for liquid with satisfactory electrical conductivity can be replaced with pure water fully.Especially, by in this Electrolyzed Processing, using pure water or ultra-pure water, can high selectivity remove at most of raised portion of this substrate surface.In addition, by after Electrolyzed Processing, carrying out once more to the substrate plated film, can stop the undue formation of raised portion when plated film, even and, also can obtain having the electroplating metal film of excellent surface fineness when micropore and macropore (wide groove) when being present in this substrate surface jointly.
The invention provides another substrate processing apparatus, this equipment comprises: the head section that is used to keep substrate; This substrate surface is electroplated to form the plated film section of electroplating metal film; The cleaning section that is used for this substrate of cleaning behind this plated film; And the Electrolyzed Processing section with machined electrode, this section is used for that so described at least metal film on this substrate is carried out electrolysis and removes processing, promptly between liquid exists under the situation by substrate and this machined electrode after voltage is applied to cleaning; Wherein this head section can move between this plated film section, this cleaning section and this electrolysis section, keeps this substrate simultaneously.
In a preferred embodiment of the invention, this Electrolyzed Processing section is by carrying out Electrolyzed Processing to the acid solution supply between the substrate behind the plated film and this machined electrode.For instance, can use dilution heat of sulfuric acid for example or dilute phosphoric acid solution about 0.01 to the acid solution of about 0.1 percentage by weight as Working liquids.
The invention provides another substrate processing method, this method comprises: to the surface coating of substrate; After this plated film, this substrate surface is cleaned; Voltage is applied between this substrate and the machined electrode and to carrying out Electrolyzed Processing by existing at liquid under the situation on cleaning back substrate surface; Wherein this plated film, this cleaning and this Electrolyzed Processing repeat twice at least.
Preferably, ion-exchanger is present between this substrate and this machined electrode.Preferably, this liquid is pure water, ultra-pure water or has liquid or the electrolyte solution that is no more than 500 μ s/cm conductivity.
Description of drawings
Figure 1A shows the schematic diagram of the example of copper-connection spare formation with process sequence to 1F;
Fig. 2 shows when the Semiconductor substrate plated film at the schematic diagram that forms difference in height;
Fig. 3 is the schematic diagram that shows the Electrolyzed Processing principle according to the present invention, wherein Electrolyzed Processing is carried out like this, promptly by make machined electrode and feed electrode near substrate (workpiece), and pure water or have be no more than 500 μ s/cm conductivity the liquid supply at this machined electrode, this feed electrode and this substrate (workpiece);
Fig. 4 is the schematic diagram that shows the Electrolyzed Processing principle according to the present invention, and wherein this Electrolyzed Processing is carried out like this, promptly by ion-exchanger only is installed on this machined electrode and the liquid supply between this machined electrode and this substrate (workpiece);
Fig. 5 is for generally showing the plane graph according to the substrate processing apparatus structure of the embodiment of the invention;
Fig. 6 is for generally showing the vertical cross section of this film coating unit shown in Figure 5;
Fig. 7 is for generally showing the vertical cross section of this annealing unit shown in Figure 5;
Fig. 8 is for generally showing the horizontal sectional drawing of this annealing unit shown in Figure 5;
Fig. 9 is the schematic diagram that shows this Electrolyzed Processing cellular construction shown in Figure 5;
Figure 10 is the plane graph of this Electrolyzed Processing unit shown in Figure 9;
Figure 11 is the schematic diagram that shows the cation-exchanger reduction principle of carrying out in reduction section shown in Figure 10;
Figure 12 is for generally showing the vertical cross section of this inclination shown in Figure 5-etching unit;
Figure 13 is for generally showing the vertical cross section of this CMP unit shown in Figure 5.
Figure 14 A be show in having this surface Electrolyzed Processing that is formed on two kinds of different materials films on the substrate surface when observing at electric current and the image that concerns between the time;
Figure 14 B be show in having this surface Electrolyzed Processing that is formed on two kinds of different materials films on the substrate surface when observing at voltage and the image that concerns between the time;
Figure 15 A is to show the example that forms copper-connection spare by the substrate processing method of the embodiment of the invention according to operation to 15F;
Figure 16 is for generally showing the plane graph of substrate processing method device structure, and wherein this equipment realizes that Figure 15 A is to the substrate processing method shown in the 15F;
Figure 17 is for generally showing the profile of electroless plating unit among Figure 16;
Figure 18 is for generally showing the profile of another electroless plating unit;
Figure 19 is for generally showing the vertical section front view of Electrolyzed Processing unit, and wherein this unit can be used for replacing the CMP unit shown in Figure 16;
Figure 20 is the plane graph of Figure 19;
Figure 21 is for generally showing the vertical section front view of another Electrolyzed Processing unit;
Figure 22 is the plane graph of Figure 21;
Figure 23 is for generally showing the vertical section front view of another Electrolyzed Processing unit;
Figure 24 is the plane graph of Figure 23;
Figure 25 is for generally showing the vertical section front view of another Electrolyzed Processing unit;
Figure 26 is the plane graph of Figure 25;
Figure 27 is for generally showing the plane graph of substrate processing apparatus structure in accordance with another embodiment of the present invention;
Figure 28 is the plane graph that shows substrate machining cell in the substrate processing apparatus that is installed in Figure 27;
Figure 29 is the vertical section front view of Figure 28.
Figure 30 is the vertical sectional side view of Figure 28.
Figure 31 is the vertical cross section of the major part of substrate machining cell head section turning arm among Figure 28;
Figure 32 is the enlarged drawing of Figure 31 part;
Figure 33 is the plane graph of this head section substrate keeper;
Figure 34 is the lower flat figure of this head section substrate keeper;
Figure 35 is the vertical cross section that shows this substrate machining cell plated film section among Figure 28;
Figure 36 is the vertical cross section that shows this substrate machining cell Electrolyzed Processing section among Figure 28;
Figure 37 shows the plane graph of substrate machining cell in accordance with another embodiment of the present invention;
Figure 38 is the vertical section front view of Figure 37;
Figure 39 is the vertical cross section of the head section major part of substrate machining cell machine electrode section among Figure 37;
Figure 40 shows the plane graph that concerns between the head section of Electrolyzed Processing section in Figure 39 and the electrode section;
Figure 41 is the substrate layout figure of another substrate processing method according to the present invention;
Figure 42 A is the schematic diagram that shows Figure 41 substrate course of processing to 42F, and wherein this process comprises the circulation of plated film and Electrolyzed Processing;
Figure 43 is this substrate machining cell modification schematic diagram, wherein generally shows the Electrolyzed Processing section and the dissimilar liquid that have ion-exchanger reduction section and offers this Electrolyzed Processing section and reduction section;
Figure 44 shows to be arranged on the vertical cross section that cleans section among Figure 28 on this substrate machining cell; And
Figure 45 is the plane graph of this another modification of substrate machining cell.
Implement best mode of the present invention
Describe the preferred embodiments of the present invention with reference to the accompanying drawings in detail.In being described below, identical or corresponding elements or parts are represented with same numeral, simultaneously its unnecessary description are omitted.Below describe embodiment and use semiconductor wafer, simultaneously by means of the substrate processing apparatus processing semiconductor wafer as substrate.Yet, it should be noted that the present invention can be used on the substrate except semiconductor wafer certainly.
Fig. 5 is for generally showing the plane graph according to the substrate processing apparatus structure of the embodiment of the invention.As shown in Figure 5, this substrate processing apparatus comprises a pair of load/unload section 30 and removable transfer robot 32, wherein this load/unload section 30 is as holding the section that the box of the substrate of semiconductor wafer for example is written into and carries out, and removable transfer robot 32 is as the conveyer of this substrate of transmission in this equipment.(CMP unit) 34, chemico-mechanical polishing unit and Electrolyzed Processing unit 36 are arranged in this transfer robot 32 and opposite side this load/unload section 30.Pusher 34a, 36a are arranged in this CMP unit 34 and this Electrolyzed Processing unit 36 interior these transfer robot 32 accessible positions.
On the stroke axis 32a both sides of this transfer robot 32, four unit all are set in each side.In a side, from these load/unload section 30 sides, to be disposed in order like this, be used on this substrate surface forming film to be processed as film form the unit film coating unit 38, be used at this substrate of cleaning behind the plated film cleaning unit 40, be used for behind plated film the annealing unit 42 of this substrate annealing and the reversing machine 44 that is used to make this substrate upset.In another side, from these load/unload section 30 sides, to be disposed in order like this, be used at this substrate of cleaning behind the CMP cleaning unit 46, be used for away from being formed on or sticking to this film bevel etched to be processed unit 48 that this substrate periphery (sloping portion and marginal portion) carries out etching, after etching, being used to clean the cleaning unit 50 of this substrate and the reversing machine 52 of this substrate that is used to overturn.In addition, in these load/unload section 30 arranged alongside monitoring section 54 is arranged, during the Electrolyzed Processing of carrying out by Electrolyzed Processing unit 36, this monitoring section 54 is used for supervisory function bit voltage or streaming current betwixt between machined electrode described below and feed electrode.
And then be described in the film coating unit 38 in the substrate processing apparatus.Fig. 6 is for generally showing the vertical cross section of these film coating unit 38 examples.This film coating unit 38 is used for forming film to be processed as workpiece by plated film on this substrate surface.As shown in Figure 6, this film coating unit 38 comprises the cylindrical shape electroplating bath 82 and the substrate keeper 84 of the opened upper end that is used to hold plating bath 80, wherein this keeper 84 is used for removably keeping substrate, facing down towards such position of it wherein, wherein this substrate W covers the upper opening of this electroplating bath 82.In the inside of this electroplating bath 82, the positive plate 86 of writing board shape is flatly arranged, becomes anode in the time of wherein in this positive plate 86 is dipped in this plating bath 80, and the while substrate is as negative electrode.These electroplating bath 82 bottom center portions are communicated with plating bath playpipe 88, and wherein this plating bath playpipe 88 is used for upwards forming the plating bath injection stream.In addition, plating bath receiver 90 is provided with around these electroplating bath 82 top excircles.
In these film coating unit 38 operations, its substrate that faces down that keeps by this substrate keeper 84 is positioned at this above electroplating bath 82, given voltage is applied between this positive plate (anode) 86 and this substrate (negative electrode) W simultaneously, this plating bath 80 upwards sprays from this plating bath playpipe 88 simultaneously, thereby the injection stream of this plating bath 80 impacts on this substrate W bottom surface (will plate the surface), the plated film electric current is allowed to flow between this positive plate 86 and this substrate W whereby, so plated film is formed on the bottom surface of this substrate W.
Annealing unit 42 in substrate processing apparatus is described below.Fig. 7 is the vertical cross section that generally shows this annealing unit 42, and Fig. 8 is for generally showing the horizontal sectional drawing of this annealing unit 42.Shown in Fig. 7 and 8, this annealing unit 42 comprises having the chamber 122 that is used for the door 120 that substrate W is written into and carries out, be arranged in and be used in this chamber 122 that this substrate W for example is heated to 400 degrees centigrade hot plate 124 and be arranged in for example being used for below hot plates 124 in this chamber 122 by at these hot plate 124 internal flow cooling waters and the coldplate 126 of this substrate W cooling.
This annealing unit 42 has a plurality of lifting pins 128 that vertically move equally, and this lifting pin 128 passes this coldplate 126 and is used for this substrate W being placed and keeping in the top from wherein extending up and down.This annealing unit 42 also comprises gas inlet tube 130 and gas discharge pipe 132, wherein during annealing, this gas inlet tube is used for anti-oxidant gas is introduced between this substrate W and this hot plate 124, and gas discharge pipe 132 is used for such gas is discharged, and wherein this gas is from gas inlet tube 130 introducings and mobile between this substrate W and this hot plate 124.This pipe 130 and 132 is crossed over this hot plate 124 and is arranged in relative both sides.
As shown in Figure 8, this gas inlet tube 130 is connected to mist and introduces pipeline 142, and this pipeline 142 leads on the blender 140 subsequently, here by the N of filter 134a is housed
2The N that gas inlet tube line 136 is introduced
2Gas and by the H of filter 134b is housed
2The H that gas inlet tube line 138 is introduced
2Gas mixes, to form the mist that flows to this gas inlet tube 130 through this mist introduction pipe line 142.
In operation, on the surface of this substrate W, form plated film by film coating unit 38, this substrate W has passed door and 120 has been transported in this chamber 122 simultaneously, this substrate W remains on this lifting pin 128, this lifting pin 128 is raised to such position simultaneously, in this position, the distance between the substrate W and this hot plate 124 becomes for example value of 0.1-1.0mm on this lifting pin 128 remaining on.This substrate W is heated to for example 400 degrees centigrade by this hot plate 124 then, anti-oxidant gas is introduced into from gas inlet tube 130 simultaneously, gas can flow between this substrate W and hot plate 124 simultaneously, gas is discharged from this gas discharge pipe 132 simultaneously, thereby make this substrate W annealing, meanwhile stop its oxidation.This annealing in process can be finished in about tens seconds to 60 seconds.The heating-up temperature of this substrate W can be selected arbitrarily in 100 degrees centigrade of-600 degrees centigrade of scopes.
After annealing was finished, this lifting pin 128 was lowered by such position, in this position, sold that the distance between the substrate W and coldplate 126 becomes for example value of 0-0.5mm on 128 remaining on this liftings.By cooling water being incorporated in this coldplate 126, this substrate W is cooled to 100 degrees centigrade or lower temperature by this coldplate 126 at for example 10-60 in second.This cooling substrate W is sent to next stage.Although in this embodiment, have a few percent H
2The N of gas
2The gas mixture body and function is made above-mentioned anti-oxidant gas, but also can adopt N separately
2Gas.
And then be described in the Electrolyzed Processing unit 36 in the substrate processing apparatus.Fig. 9 is the schematic diagram that shows this Electrolyzed Processing unit 36 in substrate processing apparatus.Figure 10 is the plane graph of Fig. 9.As shown in Figures 9 and 10, this Electrolyzed Processing unit 36 comprises the arm 360 that can vertically move and flatly rotate, is supported on these arm 360 free-ended disc electrode sections 361, is arranged in the substrate keeper 362 below this electrode section 361 and is used for the power supply 363 of voltage supply between machined electrode 369 described below and feed electrode (feeder section) 373.
This arm 360 can activate and rotation flatly by electric rotating machine 364, and wherein this arm 360 is connected to the upper end of gyroaxis 365, and gyroaxis 365 is connected on this electric rotating machine 364.The motor 367 that this gyroaxis 365 can be used to move both vertically by driving and vertically moving, wherein this gyroaxis 365 is connected to ball-screw 366, and arm 360 is connected on the ball-screw 366 that vertically extends.
Can be connected on the hollow motor 368 by driving the electrode section 361 that hollow motor 368 rotate, be used between the substrate W of substrate keeper 362 maintenances and electrode section 369, producing relative motion.As mentioned above, this arm 360 is used for vertically moving and rotation flatly, this electrode section 361 can vertically be moved and rotation flatly along with this arm 360.
The nonwoven fabrics that has the strong alkalinity anion cation exchange groups can prepare by for example following method: the polyolefin nonwoven fabrics with 20-50 μ s fibre diameter and about 90% porosity stands so-called radiation graft polymerization, this radiation graft polymerization comprises that gamma-radiation shines on this nonwoven fabrics and graft polymerization subsequently, engages chain thereby introduce; And the joint chain of therefore introducing is followed amination so that quaternary ammonium group is introduced thereinto.Introducing the ability of ion-exchange group can determine by introducing joint chain quantity.This graft polymerization can the monomer of acrylic acid, styrene, glicidyl methacrylate, sodium styrenesulfonate or chloromethylstyrene carries out by for example utilizing.The quantity that engages chain can control by adjusting monomer concentration, reaction temperature and reaction time.Like this, degree of engagement promptly can maximum formation 500% at the nonwoven fabrics weight after the graft polymerization and the ratio of this nonwoven fabrics weight before graft polymerization.Therefore, the ability of introducing ion-exchange group can obtain 5meq/g at most after graft polymerization.
The nonwoven fabrics that has strong basicity cation exchange base can prepare by the following method: in the situation that has strong alkalinity anion exchange base nonwoven fabrics, polyolefin nonwoven fabrics with 20-50 μ m fibre diameter and about 90% porosity stands so-called radiation graft polymerization, this radiation graft polymerization comprises that gamma-radiation shines on this nonwoven fabrics and graft polymerization subsequently, engages chain thereby introduce; And the joint chain of therefore introducing then uses the sulfuric acid treatment of heating so that sulfonic group is introduced thereinto.If this joint chain is handled with heated phosphoric, then can introduce phosphate.This grafting degree can maximum reach 500%, and the ion-exchange group ability of so introducing after graft polymerization can maximum reach 5meq/g simultaneously.
The base-material of this ion-exchanger 369a can be for example polyethylene or polyacrylic polyolefin or any other organic polymer.In addition, except the nonwoven fabrics form, this ion-exchanger also can be textile, paper, porous material, netted or short fiber an or the like form.When polyethylene or polypropylene during as this base-material, graft polymerization can realize like this: both by at first radiation exposure at this base-material (pre-irradiation) thus go up to form free radical, this free radical and monomer reaction, can obtain having the even joint chain of few impurities whereby then.On the other hand, when the organic polymer except polyolefin is used as this base-material, can realize free radical polymerization by the base-material with monomer being injected and on base-material, shine radioactive ray (gamma-radiation, electron beam or UV-ray) (irradiation simultaneously).Although this method fails to provide uniform joint chain, it is applicable to basis material miscellaneous.
The nonwoven fabrics that has anion exchange base or cation exchange base by use is as this ion-exchanger 369a, then possiblely be, pure water or ultra-pure water or for example the liquid of electrolytic solution can be freely in this nonwoven fabrics, move, and reach the active site with water decomposition catalytic activity easily in this nonwoven fabrics, thereby many hydrones resolve into hydrogen ion and hydroxide ion.In addition, by pure water or ultra-pure water or the moving of liquid of electrolytic solution for example, this hydroxide ion that produces by water decomposition can be brought to the surface of this substrate W effectively, also can obtain high electric current whereby even with the low voltage that applies.
When this ion-exchanger 369a only has in anion exchange base and the cation exchange base when a kind of, but on the Electrolyzed Processing material, form restriction, in addition because this polarity and may form impurity.In order to address this problem, this anionite and this cation-exchanger are stackable, perhaps this ion-exchanger 369a can have anion exchange base and the basic body of cation exchange, want the variable range of rapidoprint wide whereby, has stoped the formation of impurity simultaneously.
As for this electrode, its oxidation and the decomposition problem normally that forms by this cell reaction.Therefore preferably utilize electrode material carbon, inactive relatively noble metal, heat conduction oxide or thermal conductive ceramic.Electrode increases its resistance and causes that applied voltage raises when oxidation.By with the material of the very difficult oxidation of platinum for example or with the surface of the heat conduction oxide guard electrode of for example yttrium oxide, can stop the conductance reduction that causes owing to the electrode material oxidation.
Through hole 361a is formed on the central portion of this electrode section 361.This through hole 361a leads to as the supply pure water, preferably the pure water of ultra-pure water is supplied the pure water supply pipe 371 of section, and this supply pipe 371 vertically extends in this hollow motor 368.Pure water or ultra-pure water are fed to the surface (upper surface) of this substrate W above this substrate W via this pure water supply pipe 371 and this through hole 361a.
By being arranged in the substrate keeper 362 below this electrode section 361, this substrate W removably keeps, and its surface (faces up) up simultaneously.The substrate electric rotating machine 372 that is used for generation relative motion between this substrate W and this electrode part 372 is arranged in below this substrate keeper 362.This substrate keeper 362 is connected on this substrate electric rotating machine 372, thereby this substrate keeper 362 can rotate by driving this substrate electric rotating machine 372.
As shown in figure 10, along the circumferencial direction of this substrate keeper 362, determining to provide a plurality of feed electrodes (feeder section) 373 on the position.When this substrate W kept by this substrate keeper 362, this feed electrode 373 contacted with around this substrate W, whereby this power delivery is arrived copper film (referring to Figure 1B).These feed electrodes are connected to the anode of this power supply 363.But, be used for this feed electrode 373 is taken to and (sloping portion) position contacting around this substrate W according to the Electrolyzed Processing of embodiment, this feed electrode 373 can contact with the substrate surface except around this substrate W.
According to this embodiment, as shown in Figure 9, this Electrolyzed Processing unit 36 use such one as this electrode section 361, those substrates W that this electrode section 361 keeps than this substrate keeper 362 has enough than minor diameter, thereby this substrate surface can not fully be covered by this electrode section 361.The size of this electrode section 361 is not limited to the foregoing description.
According to this embodiment, this machined electrode 369 is connected on the negative electrode of this power supply 363, and this feed electrode (feeder section) 373 is connected to the anode of this power supply 363 simultaneously.Depend on and want material processed, this electrode that is connected on these power supply 363 negative electrodes can be the feed electrode, and the electrode that is connected on these power supply 363 anodes can be a machined electrode.More particularly, when wanting material processed to be copper, molybdenum, iron or the like, Electrolyzed Processing is carried out at this cathode side, and therefore the electrode that is connected on these power supply 363 negative electrodes should be this machined electrode, and this electrode that is connected on this anode should be this feed electrode.On the other hand, be in aluminium, silicon or the like the situation, Electrolyzed Processing is carried out in this anode-side.Correspondingly, this electrode that is connected to these power supply 363 anodes should be a machined electrode, and the electrode that is connected to these power supply 363 negative electrodes should be this feed electrode.
As shown in figure 10, be used to make the reduction section 374 that is installed in ion-exchanger 369a reduction on this electrode section 361 to be arranged in this substrate keeper 362 next doors.At this ion-exchanger 369a is in the situation of cation-exchanger, has only cation (cation) electromigration to move or migration in this cation-exchanger.When the reduction cation-exchanger, as shown in figure 11, provide, a pair of regeneration electrode 377a and counterelectrode 377b, be arranged in the spacer 376 between this electrode and be arranged in this counterelectrode 377b and this spacer 376 between as the cation-exchanger 369a of ion-exchanger to be restored.Liquid A is fed between this spacer 376 and this regeneration electrode 377a from first liquid supply section 378a, and liquid B is fed between this spacer 376 and this counterelectrode 377b from second liquid supply section 378b, simultaneously, between voltage is applied to this regeneration electrode 377a and the counterelectrode 377b as anode as negative electrode from renewable power supply 379.During materials processing, the dissolved ions M of material to be processed
+Be absorbed among this cation-exchanger (ion-exchanger to be restored) 369a, then from this counterelectrode (anode) 377b side towards this regeneration electrode (negative electrode) 377a side shifting and pass this spacer 376.By flowing of the liquid A of supply between this spacer 376 and this regeneration electrode 377a, passed this ion M of this spacer 376
+From this system, discharge.Like this, this cation-exchanger 369a is reduced.At this ion-exchanger 369a is in the situation of anionite, puts upside down from the positive and negative of voltage that this reduction power supply 379 applies.
Desirablely be, this spacer 376 does not hinder the foreign ion of removing from ion-exchanger 369a to be restored and passes wherein migration, and is suppressed at flowing liquid between this spacer 376 and this reducing electrode 377a (being included in this liquid intermediate ion) and passes therethrough and enter into this ion-exchanger 369a side.In this respect, ion-exchanger allows cation or anion from passing wherein selectively penetrating, and can stop that flowing liquid is immersed in this ion-exchanger 369a side to be restored between this spacer 376 and this reducing electrode 377a.Like this, suitably the ion-exchanger of selecting can satisfy the requirement of going up this spacer.Ion exchange with this ion-exchanger to be restored of same ion exchange base conduct can be suitable for this spacer 376.
Desirablely be, be provided at liquid between this spacer 376 and this reducing electrode 377a and should be for example liquid of electrolytic solution, this liquid has high conductivity, simultaneously by with remove ionic reaction to be processed from this ion-exchanger 369a and do not form and be difficult to dissolving or dissolved compound not.Like this, this liquid is used to discharge those ions, this ion moves from this ion-exchanger 369a to be restored, and passes this spacer 376, flows out from this system by this liquid flow.Because above-mentioned liquid with high conductivity has low resistance, so this liquid can be reduced in the power consumption of this reduction section.In addition, the aforesaid liquid of dissolved compound (byproduct) can not stop solid matter to be adhered on this spacer 376 by forming not with this foreign ion reaction.Can select suitable liquid according to the kind of wanting the discharge impurities ion.For example, when the ion-exchanger that is used for the cupric electrolysis polishing is reduced, can use the sulfuric acid of 1wt% concentration or higher concentration.
During reduction process, this reduction section 374 and ion-exchanger 369a to be restored can form relative motion.Replace this spacer 376, the ion-exchange nonwoven fabrics can be arranged between this ion-exchanger 369a to be restored and this reducing electrode 377a.In this case, above-described voltage is applied between this reducing electrode 377a and this counterelectrode 377b, simultaneously liquid (pure water) is supplied between these two ion-exchangers, this ion that accumulates in whereby on this ion-exchanger 369a moves in this ion-exchange nonwoven fabrics.
Then be described in the inclination-etching unit 48 in the substrate processing apparatus.Figure 12 is for generally showing the vertical cross section of this inclination-etching unit 48.As shown in figure 12, according to this embodiment should tilt-etching unit 48 comprise be used for high speed rotating substrate W flatly keep simultaneously this substrate W substrate maintaining part 380, be placed on the substrate W surface that keeps by this substrate maintaining part 380 near the central nozzle above the central portion 382, be placed on this substrate W and enclose the edge nozzle 384 above the edge portion and be placed on this substrate W rear portion near the rear nozzle 386 below the central portion.
On the cylindrical shape waterproof cover 388 of this substrate maintaining part 380 under being positioned at, and be used for by spinning with chuck 390, enclose the circumferencial direction of edge portion, keep this substrate W in a plurality of positions along this substrate W, wherein state be this substrate W surperficial make progress towards.This central nozzle 382 and this edge nozzle 384 point to downwards respectively, and posterior nozzle 386 is directed upwards towards.
Acid solution is fed to the central portion on this substrate W surface from this central nozzle 382, and spreads all under centrifugal action on the whole surface of this substrate W.The copper natural oxide film that is formed on circuit region on this substrate W surface is removed immediately by this acid solution, stops thus on the surface of this substrate W and grows.This acid solution can comprise hydrochloric acid, hydrofluoric acid, sulfuric acid, citric acid, oxalic acid or its combination, and these acid solutions are generally used for the cleaning process in the semiconductor fabrication process.This acid solution can be included in the not interior any acid of oxidizing acid scope.The acid solution of hydrofluoric acid is more superior, because it can also be used to cleaning the back side of this substrate W and reduces and use the chemicals number.In addition, under the hydrofluoric acid situation, preferably, this hydrofluoric acid concentration is 5% weight ratio or still less, so that do not cause copper surface roughening.
Oxidizing agent solution is fed to around this substrate W from this edge nozzle 384 continuously or intermittently.The promptly oxidized agent solution oxidation of copper film of growing on top and the peripheral surface around this substrate W, the acid solution etching by coming from this central nozzle 382 and dissolving on the whole surface that is dispersed in this substrate W simultaneously.Because this copper film is etched in the zone except supplying this oxidizing agent solution point, so this oxidizing agent solution concentration and quantity do not need higher.This oxidizing agent solution can comprise ozone, hydrogen peroxide, nitric acid, hypochlorous acid or its combination, and these oxidizing agent solutions are generally used for the cleaning process in the semiconductor fabrication process.If the use Ozone Water, then preferably, ozone should contain 20ppm or more and 200ppm or still less.If the use hydrogen peroxide then preferably, should contain 10% or more weight ratios and 80% or the hydrogen peroxide of weight ratio still less.If use hypochlorous acid then preferably, should contain 1% or more weight ratios and 50% or the hypochlorous acid of weight ratio still less.
Oxidizing agent solution and the etchant that is used for silicon dioxide film simultaneously or alternately from behind nozzle 386 be fed to the central portion at this substrate W back side.The copper that is attached to this substrate W back side is oxidized by this oxidizing agent solution with the silicon of this substrate W, and etches away by the etchant that is used for silicon dioxide film.This oxidizing agent solution can comprise ozone, hydrogen peroxide, nitric acid, hypochlorous acid or its combination.More superior, because the chemicals decreased number of using, therefore for 386 supplies of back nozzle and offer the identical oxidizing agent solution of this substrate W ambient oxidant solution.Might use the etchant of nitric acid as silicon dioxide film.Can reduce the chemicals number by the nitric acid that is utilized as this substrate surface cleaning.
This edge nozzle 384 is suitable for moving on this substrate W diametric(al).The mobile width L of this edge nozzle 384 sets this edge nozzle 384 for and can at random be positioned at from this substrate outer peripheral end surface on center position.The numerical value that is used for simultaneously L according to the size of this substrate W, purposes or the like input one cover.Usually, side cut width C is set in 2mm to the 5mm scope.This substrate rotating speed be from the rear portion to unchallenged certain value of facial liquid amount of movement or high value situation, film to be processed (copper film) can be removed in this side cut width C.
The example that this inclination-etching unit 48 uses will be described below.These edge nozzle 384 positions can be adjusted, thereby should the side cut width C set according to the purpose of this substrate W size and this substrate of use W.Then this substrate W is flatly kept by this substrate keeper 380, simultaneously in horizontal plane along with these substrate keeper 380 rotations.For example, DHF (dilution fluoboric acid) is fed to this central nozzle 382 by the central portion from this substrate W surface continuously, simultaneously for example, H202 by continuously or intermittently from this edge nozzle 384 be fed to this substrate W around.
In the zone (edge and inclined-plane) of side cut width C, form HF and H on around this substrate W
2O
2Mixed solution, this mixed solution promptly etch away the lip-deep copper of this substrate W.HF and H
2O
2Mixed solution can from this edge nozzle 384 be fed to this substrate around, thereby be used for copper around this substrate of etching W.DHF and H
2O
2Concentration determined the copper etching speed.
Simultaneously, chemical solution H for example
2O
2With DHF according to H
2O
2Supply in the nozzle 386 from behind respectively with the DHF order.Therefore, the copper that is attached to this substrate W back side passes through H
2O
2Oxidized, and etch away by DHF, thereby copper pollutant just can be removed on this substrate W back side.
Then, clean this substrate W with pure water this this substrate W is rotated drying, so finish the processing of this substrate W.Be present in the copper film of the side cut width C on (edge and inclined-plane) around this substrate W surface and can be for example being removed simultaneously in 80 seconds at this substrate W back side copper pollutant.
And then be described in the CMP unit 34 in the substrate processing apparatus.Figure 13 is for generally showing the vertical cross section of this CMP unit 34.As shown in figure 13, this CMP unit 34 comprises the polishing block 342 of (polishing pad) 340 that have polishing cloth and collar 344, and wherein this polishing cloth (polishing pad) 340 is as the polished surface that is fixed to the there, and collar 344 is used to keep the substrate W that will polish.The collar 344 of the substrate W that maintenance will be polished is pressed in this substrate W on this polishing cloth 340 on this polishing block 342.In operation, this substrate W remains on this collar 344, and is pressed on this polishing pad 340 by this collar 344.This polished silicon wafer 342 and this collar 344 rotate relative to one another around they self axis, thereby the surface of this substrate W is polished.This moment, this grinding agent liquid was fed to this polishing cloth 340 from grinding agent liquid supply nozzle 346.This grinding agent liquid for example comprises alkaline solution with the silica fine grain abrasive particle that is suspended in wherein or the like.Therefore, this substrate W polishes by this alkaline solution chemical action and this fine grain abrasive particle mechanism.
Along with polishing is carried out, polishing liquid and grind particle and may be attached on this polishing cloth 340, so the polishing velocity of this CMP unit 34 descends, the substrate after this polishing is easy to polish irregular simultaneously.Therefore, this CMP unit 34 has before polishing or trimmer 348 later or these polishing cloth 340 surfaces of recovery in polishing process.In operation, the refacing of this trimmer 348 is pressed on polishing cloth 340 polished surfaces on this polishing block 342, and this trimmer 348 and this polishing block 342 rotate relative to one another simultaneously, thereby make this refacing and this polished surface sliding contact.Like this, remove the polishing liquid that is attached to this polished surface and ground particle, carried out the smooth of this polished surface and reduction simultaneously.
A series of processing of being undertaken by the present embodiment substrate processing apparatus are described below.
Shown in Figure 1A, as hold box as substrate W and have and be formed on this surperficial crystal grain layer 6, this substrate W is positioned at this load/unload section 30, takes out a substrate W by this transfer robot 32 from this box simultaneously.As required, this transfer robot 32 is sent to this substrate W on this reversing machine 44 or 52, and with this substrate W that overturns, thereby this has the face down of crystal grain layer 6.Substrate W after this upset and is sent to this film coating unit 38 once more by these transfer robot 32 clampings.
In this film coating unit 38, for example carry out copper and electroplate, with on substrate W surface, form as conductive film (material to be processed) as copper film 7 (referring to Figure 1B).After this plated film was finished, this substrate W was sent on this cleaning unit 40 by this transfer robot 32, and here this substrate is cleaned.This substrate W is sent to this annealing unit 42 by this transfer robot after cleaning.
In this annealing unit 42, heat-treat so that this substrate W is annealed.This transfer robot 32 is sent to this reversing machine 44 to this annealing back substrate W, thereby this faces up.This flip substrate W is by these transfer robot 32 clampings, and is sent to this pusher 36a in this Electrolyzed Processing unit 36 and is placed on this pusher 36a by this transportation manipulator 32.Then be sent at the substrate W on this pusher 36a on the substrate keeper 362 of this Electrolyzed Processing unit 36, this substrate W places and remains on this substrate keeper 362 simultaneously.
In this Electrolyzed Processing unit 36, this electrode section 361 is fallen so that make this ion-exchanger 369a approach to remain on the surface of this substrate W on this substrate keeper 362 or contact with it.When pure water or ultra-pure water supply upper surface at this substrate W, given voltage is applied between this machined electrode 369 and this feed electrode 373, and this substrate keeper 362 and 361 rotations of this electrode section, simultaneously, these arm 360 rotations are to move this electrode section 361 on the upper surface of this substrate W.Under the hydrogen ion and hydroxide ion effect that produce by this ion-exchanger 369a, at this machined electrode (negative electrode) 369, be formed on that the lip-deep unnecessary copper film of this substrate W 7 is processed to be fallen, the cross tie part of being made up of copper film 7 and crystal grain layer 6 (copper-connection spare) 8 forms (referring to Fig. 1 C) whereby.
Be meant to have the water that is no more than 10 μ s/cm conductivity at the pure water of supply between this substrate W and this ion-exchanger 369a during the Electrolyzed Processing, and ultra-pure water is meant to have the water that is no more than 0.1 μ s/cm conductivity here.In Electrolyzed Processing, utilize and do not comprise electrolytical pure water or ultra-pure water and can stop for example electrolytical impurity to adhere to and remain on the surface of this substrate W.In addition, copper ion that dissolves during Electrolyzed Processing or the like is caught by ion-exchanger 369a by ion-exchange reactions immediately.Copper ion that this can stop dissolving or the like precipitates on other parts of this substrate W again, perhaps stops to be oxidized to the particulate that pollutes this substrate W surface.
Replace pure water or ultra-pure water, for example, might use and have the liquid that is no more than 500 μ s/cm conductivity, this liquid is for by being added to electrolyte the electrolytic solution that obtains in pure water or the ultra-pure water.By utilizing such electrolytic solution can further reduce resistance reduction power consumption simultaneously.For example NaCl or Na
2SO
4Neutral salt solution, for example HCl or H
2SO
4Acid or for example the aqueous slkali of ammoniacal liquor can be used as electrolytic solution, simultaneously use these schemes selectively according to the performance of this workpiece.
In addition, replace pure water or ultra-pure water, can also use such liquid equally, promptly by surfactant or the like is added to obtain in pure water or the ultra-pure water, have be no more than 500 μ s/cm conductivity, preferably be no more than 50 μ s/cm, more preferably be no more than the liquid of 0.1 μ s/cm (being not less than 10MQcm resistivity).Because the existence of surfactant in pure water or ultra-pure water, this liquid can form such layer, this layer is used for being suppressed at equably interface ion migration between this substrate W and this ion-exchanger 369a, thereby make ion-exchange concentration (dissolving metal) moderate, improved the fineness of machined surface.This surfactant concentration it is desirable to be no more than 100ppm.When the value of this conductivity is too high, this current efficiency reduces, and process velocity reduces simultaneously.Use have be no more than 500 μ s/cm, preferably be no more than 50 μ s/cm, more preferably be no more than the processing rate of reduction that the liquid of 0.1 μ s/cm conductivity can obtain wishing.
The electric current that these watch-dog 54 monitoring are applied to the voltage between this machined electrode 369 and this feed electrode 373 or flow betwixt is to survey end point (terminal point of processing) during electrolyte treatment.It should be noted that be identical according to wanting rapidoprint this relation that electric current (applied voltage) changes in Electrolyzed Processing with voltage (electric current).For example, shown in Figure 14 A, material B film and materials A film are added on the substrate W according to this order stack, when monitor current in the Electrolyzed Processing of this substrate W surface, observe constant current during materials A processing, change after being converted to the different material B of processing.Similarly as shown in Figure 14B, although apply constant voltage between this machined electrode and this feed electrode during materials A processing, after being transformed into the different material B of processing, this voltage that applies changes.Figure 14 A shows by means of example and compares electric current with the materials A Electrolyzed Processing more be difficult to situation about flowing in the material B Electrolyzed Processing, and Figure 14 B shows and compares applied voltage with the materials A Electrolyzed Processing become condition with higher in the material B Electrolyzed Processing.From above-described example as can be known, can guarantee to detect end point to changing to monitor at electric current or in voltage.
Although this embodiment show 54 monitoring of this watch-dog be applied between this machined electrode and this feed electrode voltage or betwixt streaming current to survey the situation of process finishing point, can make these watch-dog 54 monitoring monitoring just in the variation of processed substrate condition equally, process the end point of setting arbitrarily to survey.In this case, " end point of processing " be meant in finished surface regulation zone and the point of the hope processing capacity that obtains, perhaps according to surface to be machined on the correlative parameter of processing capacity in regulation zone determine to reach and the point of wishing the processing capacity corresponding amount.Even, just can carry out the Electrolyzed Processing in a plurality of stages by in the course of processing, so at random setting and survey the process finishing point.
For example, this processing capacity can determine in the following way that i.e. detection owing to the coefficient of friction difference that forms causes change in friction force, is perhaps surveyed by removing the change in friction force that this substrate surface irregularity forms when this finished surface arrives different materials.Process finishing point can obtain surveying according to the processing capacity of determining like this.During Electrolyzed Processing, form heat by this work surface resistance or by collision between hydrone and the ion in liquid (pure water), its intermediate ion moves between this finished surface and work surface.When processing under controlled constant voltage effect as when being deposited on copper film on the substrate surface, along with Electrolyzed Processing is carried out and exposures that become of barrier layer and dielectric film, resistance increases, current value reduction simultaneously, so calorific value reduces gradually.Therefore, processing capacity can be determined by surveying the calorific value variation.Can therefore survey the end point of processing.Alternatively be that the thickness of film to be processed can promptly be surveyed when this finished surface arrives different materials because the intensity of reflected light variation that the formation difference in reflectivity causes by surveying like this on substrate.Process finishing point can obtain surveying according to the thickness of determining like this.The thickness of film to be processed also can be determined in the following way on substrate, is promptly for example forming eddy current in the conducting film to be processed of copper film, and monitors the eddy current that flows in this substrate, to survey for example frequency or circuitous resistance variation.Can survey the end point of processing like this.In addition, in Electrolyzed Processing, processing speed depends on value of current flowing between this machined electrode and this feed electrode, and this processing capacity and electric weight are in direct ratio simultaneously, and this electric weight is defined as the product of this current value and process time.Therefore, this processing capacity can be by to being carried out integration, and surveying the integrated value that arrives predetermined value and determine by current value and electric weight that process time, product was determined.Can survey the end point of processing like this.
After Electrolyzed Processing is finished, disconnect this power supply 363, the rotation of this electrode section 361 and this substrate keeper 362 simultaneously stops.After this, move on this pusher 36a at the substrate W on this substrate keeper 362, simultaneously at the substrate on this pusher 36a by these transfer robot 32 clampings and be sent on this inclination-etching unit 48.According to this embodiment, this feed electrode 373 substrate W direct and in Electrolyzed Processing contact.Therefore, in fact can not make machined electrode 369 approach the part that substrate contacts with feed electrode 373.Therefore, that part of can not be processed, that is to say that conducting film keeps rough on substrate W and part that this feed electrode 373 contacts.According to this embodiment, after Electrolyzed Processing, keep unprocessed this conductive film to be etched away by this inclination-etching unit 48.
In this inclination-etching unit 48, etch away unnecessary copper film on substrate W surface with chemical liquid, promptly in Electrolyzed Processing unit 36, with on the part that this feed electrode (feeder section) 373 contacts keep unprocessed copper film at substrate W.After this etching was finished, this substrate W was sent on this cleaning unit 50 by this transfer robot 32, and here this substrate is cleaned.This transfer robot 32 is sent to this reversing machine 52 to the substrate W of cleaning, substrate W upset there, thereby face down.This flip substrate W is once more by these transfer robot 32 clampings, and is sent to this pusher 34a in CMP unit 34 and is placed on this pusher 34a by this transfer robot 32.Then be sent at the substrate W on this pusher 34a on the collar 344 of this CMP unit 34, this substrate W keeps by this collar 344 simultaneously.
In this CMP unit 34, the surface of this substrate W forms the same surface of image plane mirror by chemico-mechanical polishing.In above-mentioned Electrolyzed Processing, exist barrier layer 5 (referring to Figure 1A) and on this substrate W surface, keeping unprocessed situation after the Electrolyzed Processing.Such barrier layer 5 can be removed by polishing in this CMP unit 34.When hope is further polished the dielectric film 2a of for example oxide-film, effective equally by the polishing of this CMP unit 34.After this polishing was finished, this substrate W was sent on this cleaning unit 46 by this transfer robot 32, and here this substrate is cleaned.After this, after as required by this reversing machine 44 or 52 couples of this substrate W upset, this substrate W turns back to box in this load/unload section 30 by this transfer robot 32.
Although in the above-described embodiments, film coating unit 38 and Electrolyzed Processing unit 36 are provided with respectively, also can be integrated in these unit in the unit.In addition, this film coating unit 38, this CMP unit 34 and this annealing unit 42 can optionally be provided with as required.Like this, depend on the circumstances, in constituting this substrate processing apparatus, the one or more omission in these unit.
As above-described, according to the present invention, be different from CMP processing, for example the workpiece Electrolyzed Processing of substrate can be undertaken by electrochemical action, workpiece is not produced any physical imperfection that will weaken the workpiece performance simultaneously.In addition, this Electrolyzed Processing equipment and method can be removed (cleaning) effectively and stick to material on the surface of the work.Therefore, the present invention can fully remove CMP processing or reduce burden on CMP at least.In addition, this Electrolyzed Processing of substrate can even only be utilized pure water or ultra-pure water and is realized.This has eliminated for example electrolytical impurity will adhere to or remain on possibility on this substrate surface, can simplify cleaning process and reduce burden on liquid waste processing significantly removing the processing back.
Figure 15 A is to show the example that forms copper-connection spare by the substrate processing method of the embodiment of the invention according to operation to 15F.Shown in Figure 15 A, SiO for example
2The oxide film deposition of perhaps low-k material is on the conductive layer 1A that forms half device, and wherein this conductive layer 1a is formed on the semiconductor base portion 1.Contact hole 3 and interconnection channel 4 as the tiny groove of cross tie part are formed in the dielectric film 2a by photoetching technique/etching technique.Thereafter, the barrier layer 5 of TaN or the like is formed on this whole surface, and the crystal grain layer 6 that is used to electroplate as power supply layer simultaneously is formed on this barrier layer 5 by sputter or the like.
Then, shown in Figure 15 B, on the surface of this substrate W, carry out copper facing, load this contact hole 3 and this interconnection channel 4 with copper, simultaneously, depositing copper film 7 on this dielectric film 2a.After this, this barrier layer 5 on this dielectric film 2a, this crystal grain layer 6 and this copper film 7 are removed by chemico-mechanical polishing (CMP), so that make these copper film 7 surfaces surperficial and this dielectric film 2a that are filled in this contact hole 3 and this interconnection channel 4 be in same level basically.Therefore formed the cross tie part of forming by this crystal grain layer 6 and this copper film 7 (copper-connection spare) 8 shown in Figure 15 C.
In addition,, continue to remove barrier layer 5, crystal grain layer 6 and copper film 7 on this interconnection channel 4, thereby shown in Figure 15 D, form the recess 4a that is used to load on these interconnection channel 4 tops with desired depth by modes such as chemico-mechanical polishings.Like this, even the surface of copper film 7 becomes with after this dielectric film 2a surface is concordant in being filled in this contact hole 3 and this interconnection channel 4, continuation is removed this barrier layer 5, crystal grain layer 6 and copper film 7 by chemico-mechanical polishing or the like mode, with further removal at these interconnection channel 4 internal barriers 5, crystal grain layer 6 and copper film 7, and the recess 4a that is used to load in being formed on these interconnection channel 4 tops removes operation and stops when arriving desired depth.
Alternatively, can be by at first remove barrier layer 5, crystal grain layer 6 and the copper film 7 on this dielectric film 2a by chemico-mechanical polishing (CMP) or Electrolyzed Processing, the surface of copper film 7 becomes the flush with this dielectric film 2a in being filled in this contact hole 3 and this interconnection channel 4, then by barrier layer 5, crystal grain layer 6 and this copper film 7 of chemical etching removal in this interconnection channel 4.
Shown in Figure 15 E; in the recess 4a in so being formed on this substrate W; for example the diaphragm 9 of the multi-layer compound film of being made up of thermal diffusion trapping layer 9a and oxidation trapping layer 9b forms selectively, thereby utilizes this diaphragm 9 to cover and protect the exposed surface of this cross tie part 8.More particularly, after washing this substrate W with water, carry out the electroless plating of phase I on substrate W surface, to form thermal diffusion trapping layer 9a selectively on cross tie part 8 surfaces, wherein this thermal diffusion trapping layer 9a is for example by the Co alloy composition.And then, after to the substrate water washing, carry out the second stage electroless plating, for example on thermal diffusion trapping layer 9a surface, to form oxidation trapping layer 9b selectively by the Ni alloy composition.Make the thickness of this diaphragm 9 approximate identical, even the surface of this protective layer 9 is concordant with this dielectric film 2b surface with the recess 4a thickness that is used to load.
Then, after to substrate W water washing, succeeded by drying, shown in Figure 15 F, SiO for example
2Perhaps the dielectric film 2b of SiOF is attached on the surface of this substrate W.Surface by making diaphragm 9 and the flush of dielectric film 2b, this diaphragm 9 can be prevented from outstanding this surface that flattens.This has guaranteed to be deposited on subsequently substrate surface upper nonconductive Film 2b and has had enough surface smoothnesses, thereby has eliminated making the flatten needs of additional process of dielectric film 2b surface.
By covering cross tie part 8 exposed surfaces with multi-layer compound film-diaphragm 9 so selectively and protecting this cross tie part 8; can stop cross tie part 8 oxidations and thermal diffusion effectively, multi-layer compound film is wherein formed by thermal diffusion trapping layer 9a for example Co alloy composition, that can stop cross tie part 8 thermal diffusions effectively with by oxidation trapping layer 9b for example Ni alloy composition, that can stop cross tie part 8 oxidations effectively.In this respect, the cross tie part protection with Co or Co alloy-layer can not stop the cross tie part oxidation effectively separately, and can not stop the thermal diffusion of this cross tie part simultaneously separately effectively with the cross tie part protection of Ni or Ni alloy-layer.Two-layer combination can overcome this shortcoming.
In addition, by this oxidation trapping layer 9b is superimposed upon on the thermal diffusion trapping layer 9a surface, for example, in the oxidizing atmosphere that is used to form semiconductor device with multilayer interconnection part structure, after dielectric film 2b deposition, oxidation is stoped under not reduction of the effect situation, and the oxidation of cross tie part can be prevented from.
Although in this embodiment, adopt the double-layer compound film of forming by thermal diffusion trapping layer 9a and oxidation trapping layer 9b as diaphragm 9, also can use simple layer or three or more multi-layered diaphragm certainly.
According to this embodiment, can adopt the Co-W-B alloy as thermal diffusion trapping layer 9a.Can use contain Co ion, complexing agent, pH buffer, pH adjust agent, as the alkylamine monoborane of reducing agent and comprise tungsten compound plating bath, and substrate W surface is immersed in this plating bath, can form Co-W-B alloy thermal diffusion trapping layer 9a.
If desired be that this plating bath can also comprise from one or more heavy metal compounds and sulphur compound and surfactant at least a stabilizer in the select stabilizer.In addition, adjust agent by the pH that uses ammoniacal liquor for example or ammonium hydroxide, this plating bath be adjusted to preferably at 5-14, more preferably in the 6-10pH scope.Bath temperature is usually in 30-90 degree centigrade of scope, preferably at 40-80 degree centigrade.Cobalt ions can provide from the cobalt salt of for example cobaltous sulfate, cobalt chloride or cobalt acetate in this plating bath.The amount of cobalt ions usually at 0.001-1.0mol/L, preferably in the 0.01-0.3mol/L scope.
The instantiation of this complexing agent for example can comprise the carboxylic acids of acetic acid or their salt; For example the oxycarboxylic acids of tartaric acid and citric acid and their salt; And for example the aminocarboxylic acids of glycine and their salt.These compounds both can use individually, and the mixture that also can be used as two or more compounds uses.The sum of complexing agent usually at 0.001-1.5mol/L, preferably in the 0.01-1.0mol/L scope.
The instantiation of pH buffer can comprise ammonium sulfate, ammonium chloride and boric acid.This pH buffer is usually with 0.0 1-1.5mol/L, preferably the amount of 0.1-1mol/L is used.The example that pH adjusts agent can comprise ammoniacal liquor and (tetramethylammonium hydroxide TMAH).By using this pH to adjust agent, the pH value of this plating bath adjusts to 5-14 usually, preferably in the 6-10 scope.
Alkylamine monoborane as reducing agent specifically can be dimethylamine monoborane (DMAB) or diethylamine monoborane.This reducing agent is usually with 0.01-1.0mol/L, preferably the amount of 0.01-0.5mol/L is used.
The example of Tungstenic compound can comprise wolframic acid or its salt and for example the phosphotungstic acid class (as H
3(PW
12P
40) nH
2O) heteropllyacids and their salt.This Tungstenic compound is usually with 0.001-1.0mol/L, preferably the amount of 0.01-0.1mol/L is used.
Except that mentioned component, other known additives also can join in this plating bath.The useful additives example comprises it can being electroplating bath stabilizer, the sulfur-containing compound of for example rhodanate or the surfactant of its mixture and anion, cation or nonionic class of for example heavy metal compound such as lead compound.
There is not the alkylamine (borone) of sodium can be applied to oxidation current on copper, copper alloy, silver or the silver alloy as reducing agent by utilization, thereby avoid adding the needs of palladium catalyst, like this, by this substrate W surface is immersed in this plating bath, and carry out direct electroless plating.
Although this example is used for the Co-W-B of this thermal diffusion trapping layer 9a, may adopt Co as one matter, Co-W-P alloy, Co-P alloy, Co-B alloy or the like to be used for thermal diffusion trapping layer 9a equally.
According to this embodiment, the Ni-B alloy can be used for this oxidation trapping layer 9b.Contain the nickel ion electroless plating solution, be used for complexing agent, the alkylamine monoborane of nickel ion or be used for hydrogen boron compound and the ammonium ion of nickel ion by use as reducing agent, wherein the pH value of this plating bath can be adjusted in as the 8-12 scope, and substrate W surface is immersed in this plating bath, thereby can form this oxidation trapping layer (Ni-B alloy-layer) 9b.This bath temperature is usually at 50 to 90 degrees centigrade, preferably at 55 to 75 degrees centigrade.
This complexing agent example that is used for this nickel ion can comprise malic acid and glycine.For example, NaBH
4Can be used as this hydrogen boron (horohydride) compound.As mentioned above, by utilizing alkylamine (borone), can avoid carrying out electroless plating by this substrate W surface is immersed in this plating bath simultaneously to adding the needs of palladium catalyst as this reducing agent.As mentioned above, have the common reducing agent of the electroless plating solution that is used to form the Co-W-B alloy-layer, just may carry out electroless plating continuously by utilization.
Although this example is used for the Ni-B alloy of oxidation trapping layer 9b, also can adopt Ni, Ni-P alloy or Ni-W-P alloy as one matter or the like to be used for oxidation trapping layer 9b.In addition, although this example adopts copper as the cross tie part material, also can alternatively use copper alloy, silver or silver alloy.
Figure 16 is for generally showing the plane graph of substrate processing apparatus structure, and wherein this equipment realizes that Figure 15 A processes to the substrate shown in the 15F.This substrate processing apparatus is included in a pair of chemico-mechanical polishing CMP that an end of rectangular area board space is arranged side by side) unit 210a, 210b and a pair of load/unload section arranged at this space other end, wherein this load/unload section is used for each and for example holds that box 212a, the 212b of the substrate W of semiconductor wafer are placed on wherein.Two transfer robot 214a, 214b are arranged on the route that connects this CMP unit 210a, 210b and load/unload section.Arrange reversing machine 216,218 in these feed-line both sides.Arrange cleaning unit 220a, 220b and electroless plating unit 222a, 222b in these reversing machine 216,218 both sides.In addition, vertically the pusher 236 of Yi Donging is arranged in CMP unit 210a, the 210b of feed-line side, and wherein this feed-line side is used for substrate W is transmitted between this pusher 236 and this CMP unit 210a, 210b.
Figure 17 is for generally showing the view of this electroless plating unit 222a, 222b structure.In this example, an electroless plating unit 222a is used to carry out above-described phase I electroless plating, for example, on cross tie part 8 surfaces, to form thermal diffusion trapping layer 9a, another electroless plating unit 222b is used to carry out above-described second stage electroless plating, for example, on this thermal diffusion trapping layer 9a surface, to form this oxidation trapping layer 9b.Except being used for these electroless plating unit plating bath differences, these electroless plating unit 222a, 222b have same structure.
Each electroless plating unit 222a, 222b comprise and are used for substrate W is remained on holding device on its upper surface, is used for will plating surface (upper surface) to the substrate W that is kept by holding device 911 and encloses edge and partly contact to seal this and enclose the interception element 931 of edge part and be used for plating bath is fed to the shower nozzle 941 on the edge substrate W coated surface partly of enclosing that has with interception element 931 sealings.Each electroless plating unit 222a and 222b comprise in addition, be positioned at be used near this periphery, holding device 911 top cleaning fluid be fed to cleaning fluid feeding mechanism 951 on this substrate W coated surface, be used to cleaning fluid that reclaims discharge or the like (electroplating effluent) returnable 961, be used to suck and reclaim and remain on the plating bath that this substrate W goes up plating bath and reclaim nozzle 965 and be used to rotate the motor M that drives this holding device 911.
This holding device 911 has substrate placement section 913 at its upper surface, is used for placing and keeping this substrate W.This substrate placement section 913 is used for placing and fixing this substrate W specifically, and this substrate placement section 913 has vacuum attraction mechanism (not shown), and this mechanism is used for by the substrate W of vacuum draw attraction at its rear portion.Rear portion heater 915 is plane, and from the coated surface of this substrate of following heating W and keep heated condition, this rear portion heater 915 is installed in this substrate placement section 913 rear portions.This rear portion heater 915 for example is made up of rubber heater.This holding device 911 is used for vertically moving by this motor M rotation and by the lifting device (not shown).
This interception element 931 is columnar, has to be located at the sealing 933 that its underpart is used to seal this substrate W peripheral edge, and is mounted to and can not vertically moves from the position shown in this.
This shower nozzle 941 is such structure, and this structure has the many nozzles that are arranged on leading section, is used for the plating bath of supply is spread with the shower form, and equably it is fed on the coated surface of this substrate W basically.This cleaning fluid feeding mechanism 951 has from the structure of nozzle 953 jet cleaning liquid.
This plating bath reclaims nozzle 965 and is used for moving up and down and swing, and this plating bath reclaims nozzle 965 front ends and is used for descending to this interception element 931 in, and sucks the plating bath on this substrate W, wherein this interception element 931 be positioned at substrate W upper surface enclose edge partly on.
And then, will the operation of each electroless plating unit 222a and 222b be described.At first, this holding device 911 descends from state this illustrate, and to provide the preliminary dimension gap between this holding device 911 and this interception element 931, this substrate W is positioned at and is fixed on this substrate placement section 913 simultaneously.For example 8 inches wafers are as this Semiconductor substrate W.
Then, as shown in figure 17, this holding device 911 promotes, and makes its upper surface contact with these interception element 931 lower surface, and this substrate W is peripheral by these interception element 931 sealings 933 sealings simultaneously.At this moment, the surface of this substrate W is in opening-wide state.
Then, this substrate W itself directly heats by heater 915 rear portions, and the plating bath that is heated to 50 degrees centigrade simultaneously ejects from this shower nozzle 941, thereby this plating bath is dumped on the almost whole surface of substrate W.Because this substrate W surface is blocked element 931 and centers on, therefore, the plating bath that comes down in torrents all remains on the substrate W surface.The amount of supply plating bath can be a small amount of, will become 1mm thickness (approximately 30ml) like this on this substrate W surface.As in this embodiment, remain on the surface to be coated plating bath thickness and can be 10mm or still less, and even can be 1mm.If supply plating bath on a small quantity is enough, and the firing equipment that then is used to heat this plating bath also can be undersized.
If this substrate W itself is suitable for being heated, then heating need needn't rise De Taigao than this bath temperature of power consumption.Because power consumption can reduce, be preferred like this, on plating solution performance, change also can be prevented from simultaneously.The power consumption that is used for heated substrate W can be very little, is stored in this substrate W simultaneously and goes up the plating bath amount also simultaneously seldom.Like this, the heat-retaining by 915 couples of substrate W of rear portion heater is easy to realize that the ability of this rear portion heater 915 can be very little simultaneously that this equipment can be compacter.If use the directly device words of this substrate of cooling W itself, can during plated film, carry out heating and cooling and switch, to change this plated film condition.Because the plating bath that remains on this substrate is a small amount of, therefore can excellent sensitivity carry out temperature control.
This substrate W is by the instantaneous rotation of this motor M, carries out uniform liquid and drenches to treat coated surface, and the plated film on surface to be coated is at substrate W under such state of stable state and carries out then.Specifically, this substrate W is with 100rpm or still less only rotated 1 second, to drench the surface to be coated of substrate W equably with this plating bath.Then, this substrate W keeps stable state, and electroless plating was simultaneously carried out 1 minute.This, rotational time was at most 10 seconds or still less moment.
After this coating film treatment was finished, the front end that this plating bath reclaims nozzle 965 dropped to such zone, wherein should the zone near interception element 931 inside of enclosing at substrate W on the edge part, to suck this plating bath.At this moment, if this substrate W is with for example 100rpm or the rotation of rotating speed still less, then under centrifugal action, the plating bath that remains on this substrate W can accumulate in the part that this substrate W encloses the interception element 931 on the edge part, thus can good efficiencies and high-recovery carry out the recovery of this plating bath.This holding device 911 reduces so that this substrate W is separated from this interception element 931.This substrate W begins rotation, and this cleaning fluid (ultra-pure water), to cool off this coated surface, dilutes simultaneously and clean on the coated surface of substrate W from nozzle 953 splashes of this cleaning fluid feeding mechanism 951 simultaneously, stops thereby this electroless plating is reacted.At this moment, the cleaning fluid from these nozzle 953 splashes can offer this interception element 931 to carry out the cleaning of this interception element 931 simultaneously.This electroplating effluent was recovered in this returnable 961 and discarded this moment.
Once the plating bath of Shi Yonging did not re-use, but abandoned.As mentioned above, and compare in prior art, the plating bath amount that is used for this equipment can be considerably less.Like this, even without re-using, discarded plating bath amount also seldom.In some cases, this plating bath can be installed reclaim nozzle 965, already used plating bath can be used as electroplating effluent in this cleaning fluid is recovered to this returnable 961.
Then, this substrate W with high speed rotating, is used to utilize the centrifugal force dehydration by motor M, and then this substrate W removes from this holding device 911.
Figure 18 is the signal pie graph of another electroless plating unit 222a and 222b.The example of Figure 18 and above-mentioned electroless plating film device difference shown in Figure 17 are, in this holding device 911, do not provide rear portion heater 915, and arrange lamp heater 917 above the holding device 911 at this, and lamp heater 917 917 and shower nozzle 941-2 integrate.The a plurality of annular lamp heaters 917 that for example have different radii are provided with one heart, and a plurality of nozzle 943-2 of this shower nozzle 941-2 open wide from the gap between lamp heater 917 with a circle form simultaneously.This lamp heater 917 can be made up of single spiral lamp heater, perhaps can be made up of other lamp heater of various structures and configuration.
Even utilize this structure, this plating bath can be fed on the surface to be coated of substrate W with the spray form basically equably from each nozzle 943-2.In addition, the heating of this substrate W and heat-retaining can directly realize equably by this lamp heater 917.This lamp heater 917 not only heats this substrate W and this plating bath, and the circumference air, presents the heat-retaining that acts on this substrate W like this.
Substrate W by this lamp heater 917 directly heats this lamp heater 917 that need have relatively large power consumption.Replace such lamp heater 917, the lamp heater 917 and the rear portion heater 915 of relative little power consumption shown in Figure 17 are capable of being combined, be used for mainly utilizing this rear portion heater 915 this substrate of heating W, the main simultaneously storage heat that realizes this plating bath and surrounding air by this lamp heater 917.In the mode identical, the device that cools off this substrate W directly or indirectly can be set control to carry out temperature with these the above embodiments.
According to above-mentioned substrate processing apparatus shown in Figure 16, be deposited on the lip-deep copper film 7 of substrate W (referring to Figure 15 B) and polish away with this CMP unit 210a, 210b.Replace this CMP unit 210a, 210b, can use the Electrolyzed Processing unit to be used for removing this copper film 7 or the like by Electrolyzed Processing.This CMP unit 210a, 210b structure are identical with structure shown in Figure 13, therefore omit its description.
Figure 19 and 20 shows the Electrolyzed Processing unit.This Electrolyzed Processing unit 440a comprises the disc electrode section 448 that substrate keeper 446 and insulating material are made.Wherein this substrate keeper 446 is supported on turning arm 444 free ends, and turning arm 444 can flatly rotate, be used for attracting and keeping this substrate W, face down (so-called " facing down " mode) wherein, and electrode section 448 is positioned at below this substrate keeper 446.This electrode section 448 has embedding fan-shaped machined electrode 450 and feed electrode 452 wherein, and these electrodes arrange that alternately their surface (end face) exposes.Ion-exchanger 456 is installed in the upper surface of this electrode section 448, so that cover the surface of this machined electrode 450 and this feed electrode 452.
Only with the electrode section 448 with this machined electrode 450 and this feed electrode 452 as an example, this embodiment adopts such electrode, and this electrode has than the big twice of this substrate W diameter, thereby Electrolyzed Processing all can be stood in the whole surface of this substrate W.
This turning arm 444 moves up and down by the motor 460 that driving is used to move both vertically via ball-screw 462, and is connected to the upper end by the gyroaxis 466 that drives electric rotating machine 464 rotations.This substrate keeper 446 is connected on the electric rotating machine 468 that is installed on these turning arm 444 free ends, and allows by driving this electric rotating machine rotation.
This electrode section 448 is directly connected on the hollow motor 470, and can rotate by driving this hollow motor 470.As be used to supply pure water, preferably the through hole 448a of the pure water supply section of ultra-pure water is formed on the central portion of this electrode section 448.This through hole 448a is connected on the pure water supply pipe 472, and this pure water supply pipe 472 vertically extends in this hollow motor 470.Pure water or ultra-pure water are supplied by this through hole 448a, and offer the whole finished surface of substrate W via this ion-exchanger 456.Each can be set all be connected to a plurality of through hole 448a on this pure water supply pipe 472, so that Working liquids is crossed the whole finished surface of this substrate W.
In addition, the pure water nozzle 474 that is used to supply pure water or ultra-pure water as pure water supply section is arranged in this above electrode section 448, radially extends at this electrode section 448, and has a plurality of supply ports.Pure water or ultra-pure water above this substrate W and below so offer on the surface of this substrate W.Here, pure water is meant to have the water that is no more than 10 μ s/cm conductivity, and ultra-pure water is meant to have the water that is no more than 0.1 μ s/cm conductivity.Replace pure water, can use to have liquid or any electrolytic solution that is no more than 500 μ s/cm conductivity.By during processing, supplying electrolytic solution, can remove for example processing instability factor of elaboration products and dissolved gas, well reproducibility realizes processing equably simultaneously.
According to this embodiment, at circumferencial direction, a plurality of sector electrode plates 476 are arranged in this electrode section 448, and the negative electrode of power supply 480 and anode alternately are connected on the battery lead plate 476 via collecting ring 478.The battery lead plate 476 that is connected to power supply 480 negative electrodes becomes machined electrode 450, and the battery lead plate 476 that is connected to power supply 480 anodes becomes feed electrode 452.Because cupric electrolysis processing is carried out at cathode side, so this is used for for example processing of copper.Depend on processed material, cathode side can be the feed electrode, and anode-side can be a machined electrode.More particularly, when wanting material processed to be copper, molybdenum, iron or the like, Electrolyzed Processing is carried out at this cathode side, and therefore the battery lead plate 476 that is connected on these power supply 480 negative electrodes should be this machined electrode 450, and this battery lead plate 476 that is connected on this anode should be this feed electrode 452.On the other hand, be in aluminium, silicon or the like the situation, Electrolyzed Processing is carried out in this anode-side.Correspondingly, this battery lead plate that is connected to this power anode should be a machined electrode, and the battery lead plate that is connected to this power cathode should be this feed electrode.
By circumferencial direction at electrode section 448, arrange this machined electrode 450 and this feed electrode 452 so respectively and alternately, do not need electricity is fed to the fixedly current feed department of conductive film (portion to be processed), processing simultaneously can realize on the whole surface of substrate.
This Electrolyzed Processing unit 440a has controller 496, this controller 496 these power supplys 480 of control in case allow this power supply 480 at random control from this power supply 480 to this machined electrode 450 and the voltage and current this feed electrode 452 at least one.This Electrolyzed Processing unit 440a also has electric quantity integration device (voltameter) 498, this integrator is connected to the lead that stretches out from this power supply 480 negative electrodes, surveying this current value, by this current value and this process time product determine electric weight, thereby and to the definite electrification sum of this electric quantity integration.Output signal from this electric quantity integration device 498 is input to this controller 496, and the output signal from this controller 496 is input to power supply 480 simultaneously.
In addition, as shown in figure 20, be used to recover reduction section 484 settings of this ion-exchanger 456.This reduction section 484 comprises turning arm 486 and goes back procephalon 488 by this turning arm 486 what its free end kept, this turning arm 486 has basically the similar structure of turning arm 444 that keeps this substrate keeper 446 to this, and crosses over the opposite side that this electrode section 448 is positioned at turning arm 444.In operation, should be provided to this ion-exchanger 456 (referring to Figure 19) from this power supply 480, thereby promote for example to stick to the impurity dissolving of the copper on this ion-exchanger 456 with the opposite electromotive force that is used to process.Therefore the reduction of this ion-exchanger 456 can realize during processing.The ion-exchanger 456 of this reduction cleans by pure water or the ultra-pure water that offers these electrode section 448 upper surfaces.
And then, the Electrolyzed Processing of being undertaken by this Electrolyzed Processing unit 440a is described.
At first, for example the substrate W shown in Figure 15 B has the copper film 7 (part to be processed) as electrically conductive film on its surface, this substrate W is kept by the substrate keeper 446 of this Electrolyzed Processing unit 440a and attracts, and this substrate keeper 446 moves to Working position directly over this electrode section 448 by this turning arm 444.This substrate keeper 446 descends by this motor 460 that driving is used to move both vertically then, thereby the surface that this substrate W that keeps by this substrate keeper 446 contacts or approaches this ion-exchanger 456, wherein this this ion-exchanger 456 is installed on the upper surface of electrode section 448.
And then, power supply 480 applies given voltage or electric current between next comfortable this machined electrode 450 and this feed electrode 452, simultaneously this substrate keeper 446 and 448 rotations of this electrode section.Simultaneously, by this through hole 448a, below this electrode section 448 to its upper surface, supply water or ultra-pure water, simultaneously by this pure water nozzle 474, supply pure water or ultra-pure water to its upper surface from this above the electrode section 448, thereby pure water or ultra-pure water are injected in the space between this machined electrode 450, this feed electrode 452 and this substrate W, thereby the Electrolyzed Processing that is formed on this substrate W upper conductor film (copper film 7) realizes by the hydrogen ion or the hydroxide ion that produce in this ion-exchanger 456.According to above-mentioned Electrolyzed Processing unit 440a, a large amount of hydrogen ions or hydroxide ion can form by allowing pure water or ultra-pure water to flow in ion-exchanger 456, simultaneously a large amount of such ions can offer the surface of substrate W, and this Electrolyzed Processing can be carried out effectively whereby.
More particularly, by pure water or ultra-pure water are flowed in this ion-exchanger 456, the water of q.s can offer functional group's (sulfonic group in the ion-exchanger that has the strong-acid type cation exchange base), thereby increase the amount of decomposition water molecule, can remove the elaboration products (comprising gas) that reaction forms between this electrically conductive film (copper film 7) and hydroxide ion by current simultaneously, working (machining) efficiency is improved whereby.The mobile of pure water or ultra-pure water is necessary like this, and it is desirable to, and current should be constant and uniform.The constancy of current and uniformity cause constancy and the uniformity in ion supply and the elaboration products removal, and this causes work in-process to have constancy and uniformity subsequently.
After Electrolyzed Processing was finished, this power supply 480 disconnected with this machined electrode 450 and feed electrode 452, and the rotation of this substrate keeper 446 and electrode section 448 simultaneously stops.After this, this substrate keeper 446 raises, and process substrate W is sent to next program.
In this embodiment, pure water or ultra-pure water are provided between this electrode section 448 and this substrate W.Can also replace pure water or ultra-pure water to use by surfactant or the like being added to the liquid that pure water or ultra-pure water obtain, as mentioned above, wherein this liquid have be no more than 500 μ s/cm, preferably be no more than 50 μ s/cm, more preferably be no more than 0.1 μ s/cm and be not less than 10MQcm resistivity) conductivity.
According to this embodiment, by put into ion-exchanger 456 between this substrate W and this machined electrode 450 and this feed electrode 452, this processing speed improves significantly.In this respect, the electrochemistry processing of use ultra-pure water reacts to each other by the chemistry between hydroxide ion in ultra-pure water and the material to be processed and realizes.Yet under normal temperature and pressure conditions, the amount as the hydroxide ion of reactant in ultra-pure water arrives 10-7mol/L less, thereby owing to remove outside the reaction of processing reaction (for example oxide-film forms and reacts) except being used to, this removal working (machining) efficiency can reduce.Therefore, needing increases hydroxide ion, to remove processing effectively.The method that is used to increase hydroxide ion is by using catalytic specie to promote the decomposition reaction of ultra-pure water, and ion-exchanger can be used as such catalytic specie effectively.More particularly, by reciprocation between functional group in ion-exchanger and the hydrone, the activation energy relevant with the hydrone decomposition reaction descends, and the decomposition of this water obtains promoting whereby, thereby has improved processing speed.
In addition, according to this embodiment, when Electrolyzed Processing, this ion-exchanger 456 contacts or approaches this substrate W.When this ion-exchanger 456 approaches this substrate W, yet depend on distance between them, resistance is bigger to a certain extent, and therefore, high a little voltage is necessary, so that necessary current density to be provided.Yet, on the other hand,, being easy to form pure water or ultrapure current along this substrate W surface owing to have contactless relation, the product that is formed on whereby on this substrate surface can be removed effectively.In this ion-exchanger 456 and situation that this substrate W contacts, this resistance becomes very little, therefore only need apply low-voltage, can reduce this power consumption whereby.
If voltage raises and increases this current density so that improve processing speed, then when the resistance between this electrode and this substrate (workpiece to be processed) is big, can discharge.The generation of discharge can occur being uneven at substrate surface, can not form even and smooth machined surface like this.On the contrary, because when this ion-exchanger 456 contacted with this substrate W, this resistance was very little, therefore can avoid the generation of discharging.
When the ion-exchanger that has the cation exchange base by use carries out Electrolyzed Processing as ion-exchanger 456, the ion-exchange group of this ion-exchanger (cation-exchanger) 456 copper, the and then working (machining) efficiency of step decline whereby abrim after processing.When the ion-exchanger that has the anion exchange base by use carries out Electrolyzed Processing as this ion-exchanger 456, the particulate of cupric oxide can form and be attached on the surface of this ion-exchanger (anionite) 456, realize processing speed whereby, thereby damage the uniformity of substrate surface processing speed to be processed, the surface that the while particle can pollute next substrate to be processed.
In operation,, offer ion-exchanger 456 from power supply 480, thereby for example promote to be attached to the dissolving of the impurity of copper on this ion-exchanger 456 via going back protocephalic region 488 with the opposite electromotive force that is used to process in order to eliminate such shortcoming.Therefore the reduction of this ion-exchanger 456 can realize during processing.The ion-exchanger 456 of this reduction cleans by pure water or the ultra-pure water that offers these electrode section 448 upper surfaces.
Figure 21 and 22 shows another Electrolyzed Processing unit 440b.In this Electrolyzed Processing unit 440b, the pivot O of this electrode section 448
1Away from this substrate keeper 446 pivot O
2Certain distance; This electrode section 448 is around this pivot O
1Rotation, this substrate keeper 446 is around this pivot O simultaneously
2Rotation.In addition, this machined electrode 450 and this feed electrode 452 are connected to this power supply 480 via these collecting ring 478 conductions.In addition according to this example, this electrode section 448 is designed to have the diameter bigger than this substrate keeper 446, arrive such degree greatly so that when electrode section 448 around this pivot O
1Rotation and this substrate keeper are around this pivot O
2During rotation, this electrode section 448 covers the whole surface of this substrate W that keeps by this substrate keeper 446.
According to this Electrolyzed Processing unit 440b, by rotating these substrates via this substrate keeper 446, simultaneously by driving this hollow motor 470 these electrode sections 448 of rotation, carry out the Electrolyzed Processing on substrate W surface, simultaneously pure water or ultra-pure water are fed on the upper surface of this electrode section 448, simultaneously given voltage are applied between this machined electrode 450 and this feed electrode 452.
This electrode section 448 or substrate keeper 446 can replace rotating spiral mobile or the reciprocating motion that generation is for example rolled.
Figure 23 and 24 shows another Electrolyzed Processing unit 440c.In this Electrolyzed Processing unit 440c, in previous examples shown in Figure 21 and 22, the position relation between this substrate keeper 446 and this electrode section 448 is opposite.And this substrate W keeps its face up (so-called " facing up " mode), thereby Electrolyzed Processing is carried out at this substrate surface (upper surface).Like this, this substrate keeper 446 is positioned at below this electrode section 448, keeps substrate W to face up, and is used for motor rotating 468 by driving simultaneously and rotates around it self axis.On the other hand, this electrode section 448 has machined electrode 450 and the feed electrode 452 that is coated with ion-exchanger 456, this electrode district section is positioned at this above substrate keeper 446, keep face down by these turning arm 444 these its free ends, simultaneously by driving this hollow motor 470 around himself axis rotation.The lead that stretches out from this power supply 480 passes and is formed on the hollow space on this gyroaxis 466 and arrives this collecting ring 478 in addition, and further pass the hollow space of this hollow motor 470 and arrive machined electrode 450 and feed electrode 452, to apply voltage betwixt.
Via this through hole 448a that is formed on these electrode section 448 central portions, the pure water ultra-pure water is fed to the front (upper surface) of this substrate W above this substrate W from this pure water supply pipe 472.
The reduction section 492 that is used to recover to be installed in this ion-exchanger 456 of electrode section 448 is arranged in this substrate keeper 446 next doors.This reduction section 492 comprises and is full of for example reduction cell 494 of dilute acid soln.In operation, this electrode section 448 moves into place position directly over this reduction cell 494 by this turning arm 444, descend then, thereby the ion-exchanger 456 of electrode section 448 is immersed in the acid solution of this reduction cell 494 at least.After this, with be used to process the opposite electromotive force of electromotive force and be provided to battery lead plate 476, promptly by machined electrode 450 being connected to the anode of this power supply 480, simultaneously this feed electrode 452 is connected to the negative electrode of this power supply 480, thereby promote to be attached to for example dissolving of the impurity of copper on this ion-exchanger 456, therefore recover this ion-exchanger 456.This reduction back ion-exchanger 456 for example cleans by ultra-pure water.
Also according to this embodiment, this electrode section 448 is designed to have the enough bigger diameters of substrate W than being kept by this substrate keeper 446.By reducing the Electrolyzed Processing that this electrode section 448 carries out substrate W surface, thereby the substrate W that this ion-exchanger 456 contacts or approaches to be kept by this substrate keeper 446, make this substrate keeper 446 and 448 rotations of this electrode section then, rotate this turning arm 444 simultaneously, to move this electrode section 448 along this substrate W upper surface, simultaneously pure water or ultra-pure water are fed on the upper surface of this substrate, simultaneously given voltage are applied between this machined electrode 450 and this feed electrode 452.
Figure 25 and 26 shows another Electrolyzed Processing unit 440d.This Electrolyzed Processing unit 440d uses such one, and those substrates W that this electrode section 448 keeps than this substrate keeper 446 has enough than minor diameter as this electrode section 448, thereby this substrate W surface can not fully be covered by this electrode section 448.In this example, this ion-exchanger 456 is three-decker (superimposed), comprises a pair of strong-acid type cation exchange fiber 456a, 456b and is inserted in a strong-acid type cation exchanged film 456c between this strong-acid type cation exchange fiber 456a, the 456b.This ion-exchanger (superimposed) 456 has good water penetration and high rigidity, and in addition, the exposed surface (lower surface) relative with this substrate W has good smoothness.Other structures identical with shown in Figure 23 and 24.
By being manufactured, this ion-exchanger 456 comprises for example sandwich construction of the ion exchange material superimposed layer of nonwoven fabrics, textile and perforated membrane, just can improve this ion-exchanger 456 whole ion-exchange capacities, for example remove prevention formation oxide in (polishing) processing whereby, thereby avoid this this processing speed of oxide negative effect at copper.In this respect, the copper ion amount of drawing less than ion-exchanger 456 during removing processing when the whole ion-exchange capacity of ion-exchanger 456, then this oxide should be formed on inevitably that this ion-exchanger 456 surfaces are gone up or portion within it, like this processing speed is had a negative impact.Like this, the ion-exchange capacity of ion-exchanger is depended in the formation of oxide, and the copper ion that surpasses this ability simultaneously will become this oxide.Therefore the formation of oxide can stop as ion-exchanger 456 effectively by using the multilayer ion-exchanger, and wherein this multilayer ion-exchanger is formed by having the ion exchange material superimposed layer that improves total ion-exchange capacity.
As above-described; according at the substrate processing method shown in Figure 15 A and the 15F; when this diaphragm is formed on the recess that is used to load when protecting this cross tie part surperficial selectively, the surface of this diaphragm can with non-cross tie part zone as the dielectric film flush.This can stop the projection from this diaphragm of this flat surface to form, and has enough surface smoothnesses thereby assurance is deposited on dielectric film on the substrate surface or the like subsequently.Like this, can omit, cause the semiconductor device production cost to reduce process of this dielectric film surface finish or the like.
Figure 27 is for generally showing the plane graph of substrate processing apparatus structure in accordance with another embodiment of the present invention.As shown in figure 27, this substrate processing apparatus is contained in the rectangular enclosure 501.In this shell 501, carry out the plated film and the Electrolyzed Processing of substrate successively.This substrate processing apparatus comprise a pair of be used to be written into and to carry out the load/unload unit 502 that holds a plurality of substrate cassettes, a pair of be used for by chemical liquid clean this substrate inclination-etching/cleaning unit 503, a pair of be used for placing therein and keep this substrate and put upside down the substrate objective table 504 of this substrate and four be used for the substrate processing apparatus 505 that substrate carries out plated film and Electrolyzed Processing.In addition, in shell 501, be furnished with, be used for second transfer robot 507 that between this load/unload unit 502, transmits first transfer robot 506, this inclination-etching/cleaning unit 503 and this substrate objective table 504 of this substrate and be used between this substrate objective table 504 and this substrate processing apparatus 505, transmitting this substrate.
At the box that is positioned on this load/unload unit 502, hold front (device surface, work surface) substrate up.This first transfer robot 506 takes out this substrate in the middle of this box, and this substrate is sent to this substrate objective table 504, simultaneously this substrate is placed on this substrate objective table 504.Reversing machine by this substrate objective table 504 is put upside down substrate, thereby this face down is clamped by second transfer robot 507 then.On the handle of second transportation manipulator 507, this substrate W is placed and keeps at its periphery, thereby this substrate surface does not contact with this handle.Second transfer robot 507 is sent to the head section 541 of substrate machining cell 505 described below to this substrate, and in substrate machining cell 505, this substrate is by plated film and Electrolyzed Processing simultaneously.
Below detailed description is installed in the substrate machining cell 505 in the present embodiment substrate processing apparatus.Figure 28 is the plane graph of substrate machining cell 505, and Figure 29 is the vertical section front view of Figure 28, and Figure 30 is the vertical sectional side view of Figure 28.Shown in Figure 28 and 29, this substrate machining cell 505 is divided into two substrate processing sections by dividing plate 510, the Electrolyzed Processing section 530 that promptly is used to carry out the plating section 520 of substrate plated film and is used to carry out the substrate Electrolyzed Processing.This plating section 520 and this Electrolyzed Processing section 530 are enclosed in the cover 511 that limits processing space 508.Shown in Figure 28 and 29, an opening 512 that is used to be written into and to carry out substrate is formed on the sidewall of Electrolyzed Processing section 530 sides of cover 511, simultaneously the valve 513 that opening 512 bands can opening/closings.This valve 513 is connected to valve opening/closing cylinder 514.By driving this valve opening/closing cylinder 514, this valve 513 moves up and down so that open and close this opening 512.Processing space 508 by closing like this this substrate machining cell 505 hermetically, with cover 511 and valve 513 hold this plating section 520 and this Electrolyzed Processing section 530, mist that forms in this plated film or the like is prevented from diffusing out from the processing space of this substrate machining cell 505.
In addition, as shown in figure 29, inert gas (Purge gas) supply port 515 is located at this and is covered 511 tops, and for example the inert gas of N2 gas (Purge gas) is fed in this processing space 508 from this inert gas supply port 515 simultaneously.Cylindrical shape air pipe 516 is arranged on this and covers 511 bottoms, and the gas in this processing space 508 gives off by this air pipe 516 simultaneously.
As shown in figure 28, arm shape cleaning nozzle 517 is as the cleaning section that is used to clean at the substrate of these plated film section 520 plated films, between this arrangement of nozzles this plated film section 520 and this electrolysis section 530 in this processing space.This cleaning nozzle 517 is connected to unshowned cleaning fluid source of supply, simultaneously cleaning fluid (as pure water) from this cleaning nozzle 517 towards the splash of this substrate W lower surface.This cleaning nozzle 517 is rotatable, after plated film or Electrolyzed Processing, carries out the cleaning of substrate as required.
Shown in Figure 28 to 30, can be installed in this substrate machining cell 505 at this turning arm 540 of electroplating rotation between section 520 and this Electrolyzed Processing section 530.Free end one side that is used to keep the head section 541 of this substrate that this this turning arm 540 vertically is installed.As shown in figure 28, by rotating this turning arm 540, this head section 541 can move between plated film position P and Electrolyzed Processing position Q, wherein at plated film position P, in this plated film section 520, carry out the plated film of substrate, and, carry out the Electrolyzed Processing of substrate at this Electrolyzed Processing section 530 at Electrolyzed Processing position Q.Head section 541 moving between this plated film position P and this Electrolyzed Processing position Q can not be only rotation by turning arm 540 realize.Like this, head section 541 move also can be for example translation by this head section 541 realize.
Figure 31 is the vertical cross section that shows this turning arm 540 and these head section 541 major parts.As shown in figure 31, this turning arm 540 is fixed on rotatable hollow leg 542 upper ends, and flatly rotates by the rotation of this pillar 542.The rotation axis 544 that supports by bearing 543 passes the hollow space of this pillar 542, and can be with respect to these pillar 542 rotations.In addition, drive pulley 545 is installed in the upper end of this rotation axis 544.
As shown in figure 31, this head section 541 is connected to this turning arm 540, and mainly be comprise the shell 546 that is fixed on this turning arm 540, vertically pass this shell 546 rotation axis 547, be used for keeping the substrate keeper 548 of this substrate W and the movable member 549 that vertically moves with respect to this shell 546 on surface, its underpart.This substrate keeper 548 is connected with these rotating shaft 547 lower ends.
This rotating shaft 547 supports by bearing 550, and can be with respect to these shell 546 rotations.Drive pulley 551 is installed in the top of this rotation axis 547, and synchronous belt 552 extends between above-mentioned drive pulley 545 and drive pulley 551 simultaneously.Like this, this rotation axis 547 rotates along with the rotation of rotation axis 544 on this pillar 542, and this substrate keeper 548 is with these rotation axis 547 rotations simultaneously.
Have encapsulant to form seal cavity 554 between this movable member 549 and this shell 546, source of the gas passage 555 is communicated with sealing space 554.Utilization is discharged this air to air supply to the sealing space in 554 and from this space by this source of the gas passage 555, and this movable member 549 can vertically move with respect to this shell 546.In addition, extending pressure rod 556 is arranged on around this movable member 549 downwards.
As shown in figure 31, this substrate keeper 548 comprises: the flange portion 560 that is connected with these rotation axis 547 lower ends, be used for by pull of vacuum this substrate W attract on these attraction plate 561 lower surface attraction plate 561 and around the guide ring 562 of these attraction plate 561 peripheries.This attracts plate 561 to be formed by for example pottery or enhancing resin, and a plurality of suctions hole 561a is formed on this attraction plate 561.
Figure 32 is the enlarged drawing of Figure 31 part.Shown in figure 32, the space 563 that is communicated with this attraction plate 561 suction hole 561a is formed between this flange portion 560 and this attraction plate 561.O shape ring 564 is arranged between this flange portion 560 and this attraction plate 561.These O shape ring 564 sealings of these space 563 usefulness.In addition, soft seal ring 565 is arranged on the circumferential surface of this attraction plate 561, promptly attracts between plate 561 and this guide ring 562 at this.When this substrate W was attracted and remains on this attraction plate 561, sealing ring 565 contacted with the periphery of the rear surface of this substrate W.
Figure 33 is the plane graph of this substrate keeper 548.Shown in Figure 32 to 33, six chuck mechanisms 570 along the circumferential direction are arranged on this substrate keeper 548 at certain intervals at this.Shown in figure 32, each chuck mechanism 570 comprises the pedestal 571 that is installed in these flange portion 560 upper surfaces, the bar 572 that vertically moves and the feed contact element 574 that can center on back shaft 573 rotations.Nut 575 is installed in the upper end of this bar 572, and helical compression spring 576 is inserted between this nut 575 and this pedestal 571.
Shown in figure 32, this feed contact element 574 is connected via the pin 577 that moves horizontally with this bar 572.This feed contact element 574 designs like this, when moving up with this bar 572 of box lunch, this feed contact element 574 is also inwardly closed around these back shaft 573 rotations, and when this bar 572 moved down, this feed contact element 574 rotated and outwards opens around this back shaft 573 simultaneously.Like this, when this movable member 549 (referring to Figure 31) thus move down this pressure bar 556 and 575 contacts of this nut and when pressing down this rod 572, the pressure of these rod 572 these helical compression springs 576 of opposing moves down, and this feed contact element 574 also outwards opens around these strutting piece 573 rotations whereby.On the other hand, when this movable member 549 moved up, this rod 572 rose by the elastic force of this helical compression spring 576, and this feed contact element 574 is around these back shaft 573 rotations and inwardly closed whereby.By the chuck mechanism 570 that is arranged on six positions, this substrate W is by this feed contact element location and keep its periphery, stably remains on the lower surface of this substrate keeper 548 simultaneously.
Figure 34 is the lower flat figure of this substrate keeper 548.As shown in figure 34, on the position that this feed contact element 574 is mounted, radially the groove 562a of Yan Shening is formed on the lower surface of this guide ring 562.When this feed contact element 574 opened and closes, this feed contact element 574 moved in the groove 562a of this guide ring 562.
Shown in figure 32, the electricity supply element 578 of conduction is installed on the inner surface of each feed contact element 574.This electricity supply element 578 contacts with conductive feed plate 579.This feeder panel 579 is electrically connected on the feed cable 581 via bolt 580, and feed cable 581 is connected on the power supply 702 (referring to Figure 35) simultaneously.Inwardly closed and when remaining on the periphery of this substrate W when this feed contact element 574, the electricity supply element 578 of this feed contact element 574 contact with the periphery of this substrate W and copper film 7 (referring to Figure 1B and 15B) that electric power is provided to this substrate W preferably this electricity supply element 578 make by such metal, this metal is nonreactive with metal to be processed on this substrate W.
As shown in figure 31, swivel joint 582 is arranged on the upper end of each rotation axis 547, be connected to pipe 585 from being located at the pipe 584 that connector 583 stretches out on this substrate keeper 548 via this swivel joint 582, this pipe 585 stretches out from this power supply 702 with at this equipment intermediate pump (not shown).Above-mentioned feed cable 581 covers in this pipe 584,585, thereby the electricity supply element 578 of this feed contact element 574 is connected with power supply 702 conduction in this equipment.In addition, be communicated with the pipe that is used for substrate attraction with each space 563 and also cover in this pipe 584,585, thereby by driving this vacuum pump, this substrate W can be attracted on the lower surface of this attraction plate 561.
Describe in order to realize this vertical and horizontal motion, the drive unit that rotatablely moves and the rotation of this head section 541 with reference to Figure 29 and 30 below.This drive unit 600 is arranged in the position except this processing space 508, and wherein this processing space is limited by the cover 511 of this substrate machining cell 505.Therefore, be prevented from entering this plated film section 520 or the like from particle of this drive unit 600 or the like.In addition, the influence of smog that forms in plated film on this drive unit 600 or the like can be lowered, and the durability of this drive unit 600 can be improved whereby.
This drive unit 600 is mainly by being located at track 601 on these substrate machining cell 505 frameworks, being arranged on the glide base 602 on this track 601 and being installed in this glide base 602 and forming with respect to the lifting base portion 603 that this glide base 602 vertically moves.Above-mentioned pillar 542 is supported on this lifting base portion 603 rotationally.Therefore, when this lifting base portion 603 slided on this track 601, this head section 541 flatly moved (in A direction shown in Figure 28).This lifting base portion 603 has electric rotating machine 604 and hinge suspension type motor 605, and this glide base 602 has the lifting motor (not shown).
Driven pulley 606 is installed in this pillar 542 lower ends, and this pillar 542 is supported on this lifting base portion 603 lower ends, and along with this pillar 542 rotates together.Synchronous belt 607 is at driven pulley 606 and be installed between the drive pulley 608 on 605 in this hinge suspension type motor and extend.Like this, this pillar 542 is by driving this hinge suspension type motor 605 rotations, and the arm 540 that is fixed to whereby on this pillar 542 also rotates.
This lifting base portion 603 has sliding part 610, and this sliding part 610 can vertically be directed by being located at sliding part support 609 on this glide base 602.When the sliding part of this sliding part 610 that promotes base portion 603 by this glide base 602 supports 609 when guiding like this, this lifting base portion 603 comes vertically mobile by unshowned hoisting mechanism.
The driven pulley 611 that rotates together along with this rotation axis 544 is installed in rotation axis 544 lower ends, and this rotation axis 544 is inserted in this pillar 542, synchronous belt 612 extends between this driven pulley 611 and drive pulley 613 simultaneously, and wherein this drive pulley 613 is installed on the axle of this electric rotating machine 604.Like this, by driving this electric rotating machine 604 and via this synchronous belt 552, these rotation axis 544 rotations, wherein this synchronous belt 552 extends in this drive pulley 545 that is installed to this rotation axis 544 and is installed between the driven pulley 551 on these head section 541 rotation axiss 547, and this rotation axis 547 also rotates.
This plated film section 520 on this substrate machining cell 505 is described below.Figure 35 is the vertical cross section that shows these plated film section 520 major parts.As shown in figure 35, keep the general columnar coating bath 620 of plating bath to be arranged on this plated film section 520.Interception element 621 is arranged in this coating bath 620, and the plated film chamber 622 that is open upwards is simultaneously limited by this interception element 621.The anode 623 that is connected to the power supply 702 in this equipment via power supply selector switch 700 is arranged in this plated film chamber 622 bottoms.Preferably, this anode 623 is made by the phosphorous copper that contains 0.03 to 0.05% weight ratio phosphorus.Such phosphorous copper is used for forming so-called black film during the plated film on these anode 623 surfaces.This black film can suppress the formation of residue.
On the inner peripheral wall of this interception element 621, be used for along the circumferential direction being provided with at certain intervals towards a plurality of plating bath spouts (plating bath supply section) 624 of this plated film chamber 622 center splash plating baths.This plating bath spout 624 is communicated with plating bath service duct 625, and plating bath service duct 625 vertically extends in this interception element 621.This plating bath service duct 625 is connected on the plating bath supply pump 626 (referring to Figure 30), thereby by driving this pump 626, the plating bath of scheduled volume is fed to this plated film chamber 622 from this plating bath spout 624.In the outside of this interception element 621, form plating bath letdown tank 627, be used for the plating bath that overflows this interception element 621 is emitted.The plating bath that overflows from this interception element 621 flow within the reservoir (not shown) through this plating bath discharge-channel 627.
According to present embodiment, ion-exchanger (amberplex) 628 is arranged to the surface that it can cover anode 623.This amberplex 628 is set directly strikes on these anode 623 surfaces, be formed on these anode 623 lip-deep black films owing to upsweeping of causing of this plating bath with flow out thereby stop to stop splash stream from this plating bath spout 624.The structure that it should be noted that this plated film section is not limited to present embodiment.
This Electrolyzed Processing section 530 on this substrate machining cell 505 is described below.Figure 36 is the vertical cross section that shows these Electrolyzed Processing section 530 major parts.As shown in figure 36, this Electrolyzed Processing section 530 comprises rectangular electrode section 630 and the hollow rolling motor 631 that is connected to this electrode section 630.By driving this hollow rolling motor 631, these electrode section 630 generation arcs move and do not rotate promptly so-called rolling (rotation of translation).
This electrode section 630 comprises a plurality of at the electrode member 632 (referring to Figure 28) of B direction extension and the container 633 that is open upwards.These a plurality of electrode members 632 spacing with homogeneous in this container 633 is arranged in parallel.Each electrode member 632 comprises electrode 634, and via this power supply selector switch 700 and integrally cover this electrode 634 lip-deep ion-exchangers (amberplex) 635, this electrode 634 is connected to the power supply 702 in this equipment.This ion-exchanger 635 is installed on this electrode 634 by the holding plate 636 that is arranged in these electrode 634 both sides.
According to this embodiment, the electrode 634 of this electrode member 632 alternately is connected on the negative electrode and anode of this power supply 702.For example, as shown in figure 36, machined electrode 634a is connected on the negative electrode of this power supply 702, and feed electrode 634b is connected on this anode via this power supply selector switch 700 simultaneously.For example, when worked copper, in cathode side generation Electrolyzed Processing, the electrode 634 that therefore is connected to this negative electrode becomes machined electrode 634a, and the electrode 634 that is connected to this anode becomes feed electrode 634b.Like this, according to present embodiment, this machined electrode 634a is parallel with this feed electrode 634b and alternately arrange.As mentioned above, according to the difference of machined material, the electrode that is connected to this power cathode can be used as the feed electrode, and the electrode that is connected to this anode can be used as machined electrode.
By on perpendicular to these electrode member 632 longitudinal directions, this machined electrode 634a and this feed electrode 634b being set so alternately, just no longer necessity is provided for electric power is fed to the feeder section of this substrate W conductive film (wanting rapidoprint), and the processing on the whole surface of this substrate W simultaneously becomes possibility.In addition, during this processing, perpendicular on the direction longitudinally, by making the substrate scanning certain distance that is kept by this substrate keeper 548, this distance then can realize uniform processing corresponding to the spacing integral multiple between adjacent machined electrode 634a.In addition, be applied to the both positive and negative polarity of pulse-shaped voltage between the electrode 634, just can dissolve this electrolysate, repeatedly repeat to improve the fineness of machined surface simultaneously by processing by change.
As shown in figure 36, in the both sides of each electrode member 632, between the ion-exchanger 635 of this substrate W and this electrode member 632, be provided for supplying the pure water supply nozzle 637 of pure water or ultra-pure water.This pure water supply nozzle 637 is connected to pure water supply pump 638 (referring to Figure 29), thereby by driving this pump 638, the pure water of scheduled volume or ultra-pure water are provided between this substrate W and this ion-exchanger 635 from this pure water supply nozzle 637.
According to this embodiment, this container 633 is full of from the liquid of this pure water supply nozzle 637 supply, carry out Electrolyzed Processing simultaneously this substrate W be immersed in this liquid.In the outside of this container 633, be provided for discharging the fluid discharge groove 639 of the liquid that overflows from this container 633 circle wall 633a.The liquid that overflows from this circle wall 633a flow in this waste liquid cylinder (not shown) through this fluid discharge groove 639.
According to present embodiment, this power supply 702 switches by this power supply selector switch 700, thereby when when this plated film section 520 carries out plated film, the electricity supply element 578 of this feed contact element 574 is connected on the negative electrode of this power supply 702, this anode 623 is connected on the anode of this power supply 702 simultaneously, simultaneously when when this Electrolyzed Processing section 530 carries out Electrolyzed Processing, the anode that the electrode 634 of this electrode member 632 alternately is connected to negative electrode and is connected to this power supply 702.
By the electricity supply element 578 of this feed contact element 574, can realize ad hoc giving this substrate supply of electric power, and utilize all electrodes 634 shown in Figure 36 as machined electrode.Because in this case, directly and only pass through this chuck mechanism 570, electric power directly is supplied to this substrate, and this substrate is very little with the part that this feed electrode (electricity supply element 574) contacts, and that is to say that bubble forms the zone and reduces.In addition, the number of machined electrode doubles, and that is to say, the machined electrode number of crossing this substrate during Electrolyzed Processing increases, and processing uniformity and the processing speed on the entire substrate surface improves whereby.
In addition, although in the present embodiment, by this power supply selector switch 700, this power supply 702 switches between plated film section 520 and this Electrolyzed Processing section 530, just can provide the independent energy with this Electrolyzed Processing section 530 for this plated film section 520.
Describe below and utilize substrate processing apparatus shown in Figure 27, be used to process for example series of processes of the substrate of Semiconductor substrate.At first, in a box in advance substrate orientation, wherein their front (device surface, work surface) up, and this box is positioned on this load/unload unit 502.This first transfer robot 506 takes out a substrate on being placed on this load/unload unit 502 box, and this substrate is sent to substrate objective table 504, simultaneously this substrate is placed on this substrate objective table 504.Reversing machine by this substrate objective table 504 is put upside down the substrate on this substrate objective table 504, clamps by second transfer robot 507 then.Drive the valve opening/closing cylinder 514 of this substrate machining cell 505, to open this valve 513, this substrate W to be inserted in this substrate machining cell 505 from the opening 512 that is formed on this lid 511 by second transfer robot 507 simultaneously.
Before this substrate is sent to this substrate machining cell 505, the electric rotating machine of this drive unit 600 is driven, so that predetermined angular of pillar 542 rotation, so that this head section 541 is moved to this Electrolyzed Processing position Q (referring to Figure 28) above this Electrolyzed Processing section 530.In addition, this movable member 549 reduces this pressure bar 556 being taken to and this chuck mechanism 570 nuts 575 position contacting, thereby the pressure of resisting this helical compression spring 576 presses down this rod 572, outwards to open this feed contact element 574.
The handle of second transfer robot 507 has been inserted in this substrate machining cell 505, and this handle promotes and makes the upper surface (back side) of this substrate W contact with attraction plate 561 lower surface of this substrate keeper 548.After this, these movable member 549 liftings are with the feed contact element 574 of this chuck mechanism 570 of inside closure.Like this, this substrate W is by this feed contact element 574 location and maintenance.The electricity supply element of this feed contact element 574 contacts with the periphery of this substrate W, that is to say, at this moment, the feed from this power supply 702 to this substrate W becomes possibility.Drive this vacuum pump so that air 563 is discharged from this space, thereby this substrate W is attracted on the lower surface of this attraction plate 561.After this, the handle of second transfer robot 507 withdraws from from this substrate machining cell 505, closes this valve 513 simultaneously.
Subsequently, drive the pivoting motor 605 of this drive unit 600, so that this pillar 542 is rotated predetermined angulars, so that the head section 541 that keeps this substrate W is moved into place in this plated film position of these plated film section 520 tops P.After this, drive the elevating motor of this drive unit 600, so that this pillar 542 is reduced preset distances, thereby be immersed in the plating bath in this coating bath 620 remaining on this substrate W on these substrate keeper 548 lower surface.After this, the electric rotating machine 604 of this drive unit 600 is driven, and with rotation axis 547 rotations that make head section 541 via this rotation axis 544 on this pillar 542, thereby makes this substrate W rotation with medium rotating speed (per minute tens changes).Electric current process between this anode 623 and this substrate W then is to form copper film (plated film) 7 (referring to Figure 15 B) on this substrate W surface.In this plated film, can be applied to such pulse voltage between this anode 623 and this substrate W, wherein this current potential forwards 0 or reverse potential periodically to.
After this plated film was finished, the rotation of this substrate W stopped, and the elevating motor of drive unit 600 is actuated to this pillar 542 and this head section 541 are promoted preset distance simultaneously.Then, drive the pivoting motor 605 of this drive unit 600, with this pillar 542 rotation predetermined angulars, thereby the head section 541 that keeps this substrate W is moved into place in the position of this cleaning nozzle 517 (water jet) top.After this, drive the elevating motor of this drive unit 600 so that this pillar 542 reduces preset distance.Then, drive the electric rotating machine 604 of this drive unit 600, so that this substrate keeper 548 is with for example 100min
-1The speed rotation, cleaning fluid (pure water) towards the splash of this substrate W lower surface direction, with cleaning this substrate W and feed contact element 574 or the like behind plated film, is replaced this plating bath with pure water from this cleaning nozzle 517 simultaneously simultaneously.
After this cleaning was finished, the pivoting motor 605 of this drive unit 600 is driven so that this pillar 542 rotation predetermined angulars, thereby this head section 541 is moved to this Electrolyzed Processing position Q above this Electrolyzed Processing section 530.After this, drive the elevating motor of this drive unit 600, so that this pillar 542 is reduced preset distances, thereby this substrate W that remains on these substrate keeper 548 lower surface is taken to the position of approaching or contacting ion-exchanger 635 surfaces of this electrode section 630.After this, drive this hollow rolling motor 631, roll, drive sliding motor simultaneously, so that this substrate W scanning is corresponding to the distance of spacing integral multiple between adjacent machined electrode 634A so that this electrode section 630 produces.Simultaneously pure water or ultra-pure water from these pure water supply nozzle 637 supplies between this substrate W and this electrode member 632, thereby this substrate is immersed in the liquid in this container 633.
During Electrolyzed Processing, the above-mentioned scan operation of this substrate W is repeatedly carried out.In addition, after each scan operation, this substrate W rotates a predetermined angular, for example 20 degree or 30 degree.Because this electrode shape and configuration, service conditions or the like, can reduce the inhomogeneities of machined surface.
This power supply selector switch 700 alternately switches to the electrode 634 of this electrode member 632 is connected on the negative electrode and anode of this power supply 702, thereby voltage is applied in, simultaneously this electrode 634 be connected to this power supply 702 negative electrode as machined electrode 634a, and this electrode 634 is connected to this anode as electrode 634b.In case all electrodes 634 shown in Figure 36 form machined electrode, then the electricity supply element 578 of this feed contact element 574 is connected on the anode of this power supply 702, and this electrode 634 is connected on this negative electrode simultaneously.
By hydrogen ion and the hydroxide ion effect that produces by this ion-exchanger 635, can be implemented in the Electrolyzed Processing of lip-deep this conducting film of this substrate W (copper film 7) at this machined electrode (negative electrode) 634a.During this Electrolyzed Processing, can be applied to such pulse voltage between this machined electrode 634a and the feed electrode 634b, wherein this current potential forwards 0 or reverse potential periodically to.
Resemble in the situation of liquid of ultra-pure water in use, in this Electrolyzed Processing, this ultra-pure water itself has big resistivity, preferably, this ion-exchanger 635 is contacted with this substrate W.Can reduce this resistance like this, reduce the voltage that applies thus and reduce power consumption.Should " contact " do not mean that for as " pressure " of physical energy (stress) is provided on the workpiece in CMP.Therefore, the Electrolyzed Processing section 530 of present embodiment does not have such pressing mechanism, for example resemble the opposing substrate that in CMP equipment, uses and press the polishing element mechanism.In the CMP situation, polished surface is approximately contacting with substrate under the 20-50kPa pressure usually.On the other hand, according to the Electrolyzed Processing unit of present embodiment, this ion-exchanger 635 can contact with this substrate W for example being no more than under the 20kPa pressure.Even be no more than under the 10kPa pressure, also can realizing enough removing processing effect.
Can replace pure water or ultra-pure water and use any electrolyte solution that obtains in pure water for example or the ultra-pure water by electrolyte is added to.By utilizing electrolyte solution can reduce resistance reduction power consumption simultaneously.For example NaCl or Na
2SO
4Neutral salt solution, for example HCl or H
2SO
4Acid or for example the aqueous slkali of ammoniacal liquor can be used as electrolyte solution, suitably select simultaneously according to the performance of this worker's machined material.
Using under the situation of electrolyte solution as Working liquids, preferably, replace this ion-exchanger 635 and a contact element is provided, and this contact element is contacting and wipe this conductive film with the lip-deep conductive film of this substrate W (copper film 7).Preferably, this contact element itself is a liquid permeable, by providing many Small Holes to form liquid permeable, also is flexible simultaneously perhaps, thereby it may keep keeping sealing to contact with this substrate, does not damage this substrate.In addition, further preferably, but this contact element can conduct electricity or ion-exchange.The instantiation of this contact element comprises for example porous polymer, the fibrous material of for example nonwoven fabrics, various pads and the scrub clean element of foamed polyurethane.
In this case, can for example contain copper sulphate or the electrolytical electrolyte solution of ammonium sulfate as Working liquids, this copper film 7 (referring to Figure 15 B) surface anodization as the cross tie part material, and is wiped this copper film with this contact element by utilization.Can also be added to electrolyte solution to chelating agent,, thereby make wiping of fragile so that this copper film 7 in this surface so that to the chelated surface (referring to Figure 15 B) of this copper film 7.
In addition, can carry out Compound Machining, this for example be processed as by in the Working liquids that abrasive particle is added to electrolyte solution or pure water or Working liquids is provided simultaneously and contain abrasive particle slurries, utilize the Electrolyzed Processing of abrasive particle and the combination of mechanical polishing.
For instance, can use dilution heat of sulfuric acid for example or dilute phosphoric acid solution about 0.01 to about 0.1 percentage by weight acid solution as Working liquids.
Can also replace pure water or ultra-pure water to use by surfactant or the like being added to the liquid that pure water or ultra-pure water obtain, wherein this liquid have be no more than 500 μ s/cm, preferably be no more than 50 μ s/cm, more preferably be no more than the conductivity of 0.1 μ s/cm (being not less than 10MQcm resistivity), and this conductivity can be adjusted by adding surfactant.Because the existence of surfactant, this liquid can form such layer, this layer is used for being suppressed at equably interface ion migration between this substrate W and this ion-exchanger 635, thereby makes ion-exchange concentration (dissolving metal) moderate, has improved the fineness of machined surface.Preferably, the surfactant concentration of this liquid is no more than 100ppm.When the conductivity value of this liquid was too high, this current efficiency reduced, and process velocity reduces simultaneously.Use have be no more than 500 μ s/cm, preferably be no more than 50 μ s/cm, more preferably be no more than the processing speed that the liquid of 0.1 μ s/cm conductivity can obtain wishing.
When hope only removes the raised portion of plated film on this substrate selectively with the selectivity that increases, preferably this conductivity adjusted to and be no more than 50 μ s/cm, more preferably be no more than 2.5 μ s/cm.
After Electrolyzed Processing is finished, disconnect this power supply 702, the rolling of this electrode section 630 simultaneously stops.After this, drive the elevating motor of this drive unit 600 so that this pillar 542 and these head section 541 rising preset distances.After this, open this valve 513 of being located on this substrate machining cell 505, this second transportation manipulator 507 is inserted in this substrate machining cell 505 from the opening 512 that is formed on this lid 511 simultaneously.Second transfer robot, 507 handles rise to the position of this substrate of receivability W then.After this, this movable member 549 reduces makes this pressure bar 556 contact with the nut 575 of this chuck mechanism 570, thereby the pressure of resisting this helical compression spring 576 presses down this rod 572, outwards to open this feed contact element 574, this substrate W is released and is placed on the handle of second transfer robot 507 whereby.Then, the handle of placing second transfer robot 507 of substrate W withdraws from from this substrate machining cell 505, closes this valve 513 simultaneously.
Admitting second transfer robot, 507 this substrate W of this substrate W to move on this substrate objective table 504 after this plated film and the Electrolyzed Processing, and this substrate W is being placed on this substrate objective table 504.This substrate on this substrate objective table 504 is by these first transfer robot, 506 clampings, and this first transfer robot 506 is sent to this bevel etched/cleaning unit 503 to this substrate W simultaneously.In this inclination-etching/cleaning unit 503, the substrate W after plated film and Electrolyzed Processing cleans with chemical liquid, and simultaneously, thin copper film that forms on this substrate W sloping portion or the like is etched away.In addition, this substrate W is washed and is dry.After cleaning in this inclination-etching/cleaning unit 503, this substrate W turns back on the box of this load/unload unit 502 by this first transfer robot 506.Finish a series of processing like this.
In fact, the liquid by using this substrate presses of present embodiment and utilize 2.5 μ s/cm, 50 μ s/cm and 500 μ s/cm conductances at this Electrolyzed Processing section 530 carries out the processing of substrate.As a result, verified is, because this process substrate raised portion selective removal and fineness, preferably, the liquid that has than low conductivity is best.Obtain best fineness with liquid with other 2.5 μ s/cm conductivity of common pure water level.
Describe the substrate machining cell in substrate processing apparatus of another embodiment according to the present invention in detail below with reference to Figure 37 and 38.In being described below, those similar elements or parts with same operation or function with using in the foregoing description substrate machining cell provide identical reference number, and its unnecessary description is omitted.
Figure 37 is the plane graph of this substrate machining cell 505, and Figure 38 is the vertical section front view of Figure 37.Shown in Figure 37 and 38, this substrate machining cell 505 is divided into two substrate processing sections by dividing plate 510, the Electrolyzed Processing section 530 that promptly is used to carry out the plating section 520 of substrate plated film and is used to carry out the substrate Electrolyzed Processing.This plating section 520 and this Electrolyzed Processing section 530 are enclosed in the cover 511 that limits processing space 508.Can be arranged in this processing space 508 around the cleaning nozzle 517 of axle 517a rotation.Substrate after plated film and Electrolyzed Processing cleans with for example pure water from these cleaning nozzle 517 splashes.
The opening 512 that is used to be written into and to carry out substrate is formed on the sidewall of these Electrolyzed Processing section 530 sides of this cover 511, but opening has the valve 513 of opening/closing simultaneously.This valve 513 is connected to valve opening/closing cylinder 514.By driving this valve opening/closing cylinder 514, this valve 513 moves up and down so that open and close this opening 512.By closing this substrate machining cell 505 so hermetically, smog that forms in this plated film or the like is prevented from diffusing out from this substrate machining cell 505.
As shown in figure 38, inert gas (Purge gas) supply port 515 is located at this and is covered 511 tops, and for example the inert gas of N2 gas (Purge gas) is fed in this substrate machining cell 505 from this inert gas supply port 515 simultaneously.Cylindrical shape air pipe 516 is arranged on this and covers 511 bottoms, and the gas in this processing space 508 gives off by this air pipe 516 simultaneously.
As shown in figure 37, arm shape cleaning nozzle 517 for cleaning in the cleaning section of the substrate of these plated film section 520 plated films and cleaning at the cleaning section of the substrate of these Electrolyzed Processing section 530 Electrolyzed Processing, this arrangement of nozzles is between this plated film section 520 and this electrolysis section 530.This cleaning nozzle 517 is connected to unshowned cleaning fluid source of supply, simultaneously cleaning fluid (as pure water) from this cleaning nozzle 517 towards the splash of this substrate W lower surface.This cleaning nozzle 517 can rotate around this 517a, and withdraws from from the position shown in Figure 37 during Electrolyzed Processing.
Can be installed in this substrate machining cell 505 at this turning arm 540 of electroplating rotation between section 520 and this Electrolyzed Processing section 530.Free end one side that is used to keep the head section 541 of this substrate that this this turning arm 540 vertically is installed.As shown in figure 37, by rotating this turning arm 540, this head section 541 can move between plated film position P and Electrolyzed Processing position Q, wherein at plated film position P, in this plated film section 520, carry out the plated film of substrate, and, carry out the Electrolyzed Processing of substrate at this Electrolyzed Processing section 530 at Electrolyzed Processing position Q.
This Electrolyzed Processing section 530 comprises the power supply 704 that is arranged in the circular electrode section 651 below the head section 541 and is connected to this electrode section 651.
This turning arm 540 can activate and rotation flatly by electric rotating machine 652, and wherein this turning arm 540 is installed in the top of the rotating shaft 653 that is connected with this electric rotating machine.This gyroaxis 653 is connected to ball-screw 654, and this ball-screw 654 vertically extends, vertically move with this turning arm 540 with this motor 655 that is used to move both vertically by driving, wherein this ball-screw 654 is connected to this motor that is used to move both vertically 655.
Figure 31 is the vertical cross section that shows this turning arm 540 and these head section 541 major parts.As shown in figure 31, this turning arm 540 is fixed on the upper end of rotatable hollow leg 542, and the rotation flatly by the rotation of this pillar 542.The rotation axis 544 that supports by bearing 543 passes the hollow space of this pillar 542, and can be with respect to these pillar 542 rotations.In addition, driven pulley 545 is installed in the upper end of this rotation axis 544.
As shown in figure 31, this head section 541 is connected to this turning arm 540, and mainly be comprise the shell 546 that is fixed on this turning arm 540, vertically pass this shell 546 rotation axis 547, be used for keeping the substrate keeper 548 of this substrate W and the movable member 549 that vertically moves with respect to this shell 546 on surface, its underpart.This substrate keeper 548 is connected with the lower end of this rotation axis 547.
Can be connected on the electric rotating machine (first driving element) by the head section 541 that the driving electric rotating machine rotates, be used between substrate W that keeps by substrate keeper 362 and electrode section 651, producing relative motion.As mentioned above, this turning arm 540 is suitable for vertically moving and rotation vertically.This head section 541 vertically moves and along with this turning arm 540 vertically rotates.
The hollow motor 656 (second driving element) that is used for generation relative motion between this substrate W and this electrode section 651 is arranged in below this electrode section 651.Drive end is formed on these hollow motor 656 main shaft upper parts, and arranges prejudicially with this alignment of shafts, thereby this electrode section 651 produces roll (translation rotation).
Figure 39 is the vertical cross section that generally shows this head section 541 and this Electrolyzed Processing section 530, and Figure 40 is the plane graph that shows relation between the electrode section 651 of this substrate W and this Electrolyzed Processing section 530.In Figure 40, be shown in broken lines substrate W.Shown in Figure 39 and 40, the insulator 662 that this electrode section 651 comprises the diameter substantially discoidal machined electrode 660 bigger than this substrate W, be positioned at a plurality of feed electrodes 661 on these machined electrode 660 peripheral part and machined electrode 660 and this feed electrode 661 are separated.As shown in figure 39, the upper surface of this machined electrode 660 is coated with ion-exchanger 663 skies, and the upper surface of this feed electrode 661 is coated with ion-exchanger 664.This ion- exchanger 663 and 664 can integrally form.Figure 40 illustrates this ion-exchanger 663,664.
According to present embodiment, because size relationship between this electrode section 651 and this head section 541, during Electrolyzed Processing, can not above the electrode section 651 be fed to pure water or ultra-pure water the upper surface of this electrode section 651 from this.Like this shown in Figure 39 and 40, on this machined electrode 660, form liquid supply orifice 665, this liquid supply orifice 665 is used for pure water or ultra-pure water are fed to the upper surface of this machined electrode 660.According to present embodiment, many fluid feed hole 665 are radially arranged from these machined electrode 660 centers.This fluid feed hole 665 is connected to the pure water supply pipe that runs through these hollow motor 656 hollow spaces, thereby pure water or ultra-pure water are fed to the upper surface of this electrode section 651 by this fluid feed hole 665.
In the present embodiment, this machined electrode 660 is connected on the negative electrode of this power supply 704, and this feed electrode 661 is connected to the anode of this power supply 704 simultaneously.As mentioned above, according to the difference of machined material, the electrode that is connected to this power cathode can be used as the feed electrode, and the electrode that is connected to this anode can be used as machined electrode.
During Electrolyzed Processing, drive this electric rotating machine so that this substrate W rotates, simultaneously, this hollow motor 665 is driven, so that the rolling that this electrode section 651 produces around coiling center " O " (referring to Figure 40).By so making substrate W and this machined electrode 660 of keeping by this head section 541 in the vortex region S, produce relative motion, thereby realized the processing on the whole surface of this substrate W (copper film 7).The electrode section 651 of this Electrolyzed Processing section is designed to during relative motion, and this centre of motion (according to the eddying motion center " O " of present embodiment) is all the time in substrate W scope.By making these machined electrode 660 diameters and centre of motion of making this machined electrode 660 bigger all the time in this substrate W scope like this than this substrate W diameter, just can balanced best the frequency that exists at this substrate W surface machined electrode 660.Can also reduce the size of this electrode section 651 significantly, cause remarkable reduction of entire equipment size and weight obviously to reduce.Preferably, the diameter of this machined electrode 660 is bigger than this substrate W and this machined electrode 660 relative motions distance and this substrate W diameter sum is vortex radius " e " and less than the twice of this substrate W diameter according to present embodiment.
Because this substrate W can not process with the zone that this feed electrode 661 exists, and therefore, compares with another zone, wherein arranges peripheries with this feed electrode 661, this processing speed is very low.Therefore, preferably make the area (zone) that occupies by this feed electrode 661 less, to reduce the influence of 661 pairs of processing speeds of this feed electrode.On this viewpoint, according to present embodiment, have the periphery that is arranged in this machined electrode 660 than a plurality of feed electrodes 661 of small size, at least one feed electrode 661 is allowed to approach or contact this substrate W during this relative motion simultaneously.Can reduce not machining area with ring-type feed arrangement of electrodes is just compared in the situation of these machined electrode 660 peripheries like this, thereby stop this substrate W periphery to keep undressed.
Then, substrate processing (Electrolyzed Processing) by the substrate processing apparatus according to the present invention is described.Given voltage is applied between this machined electrode 660 and this feed electrode 661 from this power supply 704, to pass through by this ion-exchanger 663, hydrogen ion or hydroxide ion effect that 664 acid produces, conductive film (copper film 7) carries out Electrolyzed Processing on 660 pairs of these substrates of this machined electrode (negative electrode) W surface.This processing is carried out on the part of this machined electrode 660 at this substrate W.As mentioned above, produce relative motion, can process the whole surface of this substrate W by making this substrate W and this machined electrode 660.Similarly, as described above, diameter by making this machined electrode 660 is bigger than the diameter of this substrate W, make the centre of motion " O " of this machined electrode 660 be positioned at this substrate W scope all the time simultaneously, what just can make this machined electrode 660 best obtains equilibrium in the lip-deep frequency that exists of this substrate W.Can also reduce the size of this electrode section 651 significantly, cause the significant size of entire equipment to reduce and weight saving.
The substrate course of processing that comprises plated film, cleaning and Electrolyzed Processing circulation is described below with reference to Figure 41.Shown in Figure 28 and 37, can be installed in this substrate machining cell 505 at this turning arm 540 of electroplating rotation between section 520 and this Electrolyzed Processing section 530.Free end one side that is used to keep the head section 541 of this substrate that this this turning arm 540 vertically is installed.By making 540 rotations of this turning arm, the substrate that keeps by this head section 541 can and carry out between the Electrolyzed Processing section 530 of this substrate Electrolyzed Processing (electrobrightening) mobile in this plated film position 520 of carrying out this substrate plated film.In addition, this cleaning nozzle 517 is located at this substrate machining cell 505, thereby the substrate after plated film and Electrolyzed Processing can be cleaned.
As described above with reference to Figure 2, when carrying out copper facing with formation copper film on substrate W surface, wherein on this substrate W, there are micropore 3a and wide groove 4b jointly, then in this micropore 3a or the growth of plated film in the above obtain promoting, thereby this copper film 7 is easy to raise on this micropore 3a, causes the formation of raised portion.On the other hand, the plated film growth with enhanced flow levelling can not be arranged in this wide groove 4b.As a result, corresponding to being formed on the copper film 7 that is deposited on this substrate W at raised portion height above the micropore 3a with in the difference in height of wide groove 4b sunken inside partial depth sum.In order to reduce the formation of this difference in height, preferably repeatedly carry out plated film and Electrolyzed Processing (electrobrightening).
Figure 42 A is the chart that shows the substrate course of processing to 42F, wherein repeatedly carries out twice plated film and electrobrightening.At first, in this plated film section 520, carry out the electrolytic copper plated film of above-mentioned substrate W, so that copper is imbedded in this micropore 3a most ofly.In this stage, raised portion has been formed on this micropore 3a top partly, and this wide groove 4b also is not full of copper (referring to Figure 42 A).This is because high pattern density zone has large surface area, and concentrates in this narrow hole as the additive in the plating bath of plated film promoter, and plated film is grown in and exists this micropore 3a zone to obtain promoting whereby.Behind this plated film, this substrate W cleans with pure water, thereby removes this plating bath from this substrate W surface.After this, carry out Electrolyzed Processing, to remove the raised portion (referring to Figure 42 B and 42C) that above this micropore 3a, forms partly at this Electrolyzed Processing section 530.Plated film, cleaning and the Electrolyzed Processing of first series have so just been finished.
Then, after cleaning this substrate, carry out electrolytic film plating once more at this plated film section 520 with pure water.When this wide groove 4b becomes when fully being full of copper, stop this electrolytic film plating.In this stage, this wide groove 4b is full of copper fully, and copper film (plated film) 7 is formed in this micropore 3a or top (referring to Figure 42 D) equally simultaneously.After washing this substrate, carry out Electrolyzed Processing once more at this Electrolyzed Processing section 530 with pure water.By the electrolytic film plating second time, the surface of copper film 7 almost flattens, and stays the copper film 7 with ideal thickness, utilizes this thickness, and this micropore 3a and this wide groove 4b are loaded (referring to Figure 42 E and 42F).For instance, can obtain having excellent surface fineness, about this copper film (plated film) 7 of 50-100nm film thickness.Substrate after this Electrolyzed Processing cleans with pure water, succeeded by drying, thereby stops second series plated film, cleaning and Electrolyzed Processing.
Although described the situation of repeatedly carrying out twice plated film and Electrolyzed Processing, can certainly repeatedly carry out three times or more multi-series processing.In addition, might remove the unnecessary copper film part that is used in this substrate surface, forming device interconnection spare fully, and only stay the copper film on this pattern.By so repeatedly carrying out plated film and Electrolyzed Processing repeatedly, and in the process segment situation that big difference in height flattens is compared at once electrolytic, can obtain more flat processing rear surface the short period.Use has the plated film of low conductivity liquid and Electrolyzed Processing circulation can stop excessive formation at micropore zone raised portion, can provide the substrate of having processed simultaneously, and wherein copper film is embedded in hole and the wide groove flatly with high efficiency.
Figure 43 shows the sketch that the Electrolyzed Processing section changes.This Electrolyzed Processing section of T has and is used for reduction section 670a, 670b that ion-exchanger (cation-exchanger 671a and/or anionite 671b) is reduced.
Each reduction section 670a, 670b comprise the spacer 672 that approaches or contact this ion-exchanger (cation-exchanger 671a and/or anionite 671b) and arrange, the relief liquor supply section 676 that is formed on the discharge unit 675 between this machined electrode 673 or this feed electrode 674 and this spacer 672 and is used for providing to this discharge unit 675 the discharge liquid A that discharges pollutants.When the workpiece of for example substrate W near or when contacting this ion-exchanger (cation-exchanger 671a and/or anionite 671b), the discharge liquid A that is used to discharge pollutants is provided to this discharge unit 675 from this relief liquor supply section 676, the Working liquids B that is used for Electrolyzed Processing simultaneously is provided at this spacer 672 and this ion-exchanger cation-exchanger 671a and/or anionite 671b from Electrolyzed Processing liquid supply section 677) between, between simultaneously voltage is applied to this machined electrode 673 and this feed electrode 674 as anode as negative electrode from processing power source 678, thereby carry out Electrolyzed Processing.
During this Electrolyzed Processing, at this cation-exchanger 671a, the ionic absorption of material dissolves ion M+ for example to be processed is at this cation-exchanger, and this ion moves towards this machined electrode (negative electrode) 673, and passes this spacer 672.By flowing of the discharge liquid A of supply between this spacer 672 and this machined electrode 673, this ion M+ that has passed this spacer 672 discharges from this system.Like this, this cation-exchanger 671a is reduced.When cation-exchanger was used as this spacer 672, this spacer (cation-exchanger) 672 can only allow the ion M from this cation-exchanger 671a
+Penetrate.On the other hand, in this anionite 671b, the ion X in this anionite 671b
-Move towards this feed electrode (anode) 674, and pass this spacer 672.By flowing of the discharge liquid A of supply between this spacer 672 and this feed electrode 674, passed this ion M of this spacer 672
+From this system, discharge.Like this, this anionite 671b is reduced.When anionite was used as this spacer 672, this spacer (anionite) 672 can only allow the ion X from this anionite
-Penetrate.
Preferably, have for example pure water of low conductivity or the liquid of ultra-pure water and be used as this Working liquids, thereby improved the efficient of Electrolyzed Processing.Preferably, the liquid with high conductivity (electrolytic solution) is as the relief liquor supply, and wherein this relief liquor flows between this spacer 672 and this machined electrode 673 or this feed electrode 674.For example NaCl or Na
2SO
4Neutral brine solution, for example HCl or H
2SO
4Acid or for example the alkali of ammoniacal liquor can be used as electrolytic solution, and can be according to the workpiece performance and suitably selected.This can improve the reduction efficiency of this ion-exchanger.
As shown in figure 40, preferably, this electrode section has the transducer 668 that is used for surveying at the thickness of substrate metal film (copper film 7)-Electrolyzed Processing target.Comprise that for example the optical pickocff of light source cell and photodetector can be used as this transducer 668.By send light and detection reverberation, the thickness of detectable this metal film of this optical pickocff (copper film 7) from this light source cell towards metallic film surface from metal film.Laser or LED light can be used as the light that sends from this light source cell.
Alternatively, can be arranged in eddy current sensor near this metal film (copper film 7).This eddy current sensor forms eddy current and surveys the intensity of this eddy current on this metal film.Can come detection membrane thickness according to the strength of vortex that detects.Temperature sensor can also be arranged in the target proximity of this metal film-Electrolyzed Processing equally.The fact that the heat that utilization is sent during this metal film Electrolyzed Processing changes along with film thickness change, the variation on this film thickness can be surveyed from the variation of the heat of emitting.The current value that is input to the drive motors that is used to make this head section or the rotation of this Electrolyzed Processing section changes along with the varied in thickness of this metal film-Electrolyzed Processing target.Therefore, can come the detection membrane varied in thickness from the variation of this current value.Utilization provides the device of such detection thickness of metal film, just can accurately determine the thickness of film during Electrolyzed Processing, so just can carry out this processing with high accuracy.
Figure 44 shows the vertical cross section that is arranged on cleaning section on this substrate machining cell 505.As shown in figure 44, this cleaning section 717 comprises a plurality of cleaning nozzles 718 and arm shape hair-dryer 719, wherein these a plurality of cleaning nozzles 718 are used for towards this substrate W periphery direction splash cleaning fluid and clean this substrate, and this arm shape hair-dryer 719 is used for dry this substrate after cleaning.This cleaning nozzle 718 is connected on the unshowned cleaning fluid source of supply, simultaneously cleaning fluid (for example pure water) from this cleaning nozzle 718 towards the splash of this substrate W lower surface direction.This hair-dryer 719 is connected to unshowned gas supply source via a source of the gas passage 720, and dry gas (for example air or N2 gas) from this hair-dryer 719 towards the splash of this substrate W lower surface direction.This hair-dryer 719 is designed to rotatable.
According to this cleaning section 717, from this cleaning nozzle 718 behind this substrate W lower surface direction splash cleaning fluid, the rotating speed of this substrate keeper 548 is brought up to for example 300min
-1, be used for drying.Simultaneously, air blows to this substrate W from this hair-dryer 719, also is used for dry this substrate.Be necessary with common utilize the centrifugal force dehydration so that this substrate probably at about 2000min
-1The speed rotation.According to the present embodiment that same use air blows, high like this rotating speed there is no need.
The structure of this substrate machining cell is not limited to above-mentioned a kind of.For example, as shown in figure 45, can provide to center on fixedly a plurality of substrates processing sections of this pillar 542 of turning arm 540.According to embodiment shown in Figure 45, this plated film section 520, this cleaning section 710 and this Electrolyzed Processing section 530 are arranged around this pillar 542, thereby by the rotation of this pillar 542, this head section 541 can move between this plated film section 520, this cleaning section 710 and this Electrolyzed Processing section 530.This is convenient to a series of substrate processing: the plated film of substrate; The cleaning of this substrate after plated film; The Electrolyzed Processing of this substrate after cleaning; And after Electrolyzed Processing the cleaning of this substrate.At this plated film substrate be installed on this electrode between the ion-exchanger, have the liquid that is no more than 50 μ s/cm conductivity by supply, carry out Electrolyzed Processing, can realize good processing whereby, have the reinforced effects of removing this metal coating raised portion simultaneously.By repeating series of processes, be plated film, cleaning, Electrolyzed Processing and cleaning, this metal coating raised portion that exceedingly forms above this substrate surface micropore can be removed by Electrolyzed Processing, simultaneously the copper with excellent surface fineness is embedded on micropore and the common substrate that exists of this wide groove.
As above-described, according to the present invention, by behind the substrate plated film, carrying out Electrolyzed Processing, has the liquid that is no more than 500 μ s/cm conductivity by supply between this plated film substrate and this electrode, the raised portion that is formed on this substrate in this plated film can be removed effectively, the fineness of this substrate can be improved whereby.Like this, because it is different on resistance, having the liquid that is no more than 500 μ s/cm conductivity can not fully electrolytically decompose, and ionic current concentrates on the substrate raised portion of close or contact ions exchanger, and ionization simultaneously is on the metal film on this substrate (raised portion).Therefore, near or this raised portion of contacting this ion-exchanger can remove effectively, the fineness of this substrate can improve whereby.
The present invention can provide after the processing with good surface fineness metal film or imbed cross tie part.In addition, the present invention can be reduced to the thickness that obtains this smooth processing metal film or imbed the plated film of cross tie part, and is favourable therefore also from economic point of view.
Industrial applicibility
The present invention relates to a kind of substrate processing apparatus and a kind of substrate processing method, it is right wherein to be used for Being formed on the substrate surface particularly on the semiconductor wafer Heat Conduction Material processes.
Claims (47)
1. substrate processing apparatus comprises:
Be used to keep the head section of substrate;
Substrate surface is electroplated to form the plated film section of electroplating metal film;
Be used for after plated film, cleaning the cleaning section of this substrate; And
The Electrolyzed Processing section, this section is used for that so described at least metal film on this substrate is carried out electrolysis and removes processing, promptly by making ion-exchanger be present between this substrate after the cleaning and the electrode and under the situation that liquid exists voltage being applied between this substrate and this electrode;
Wherein this head section can move between this plated film section, this cleaning section and this electrolysis section, keeps this substrate simultaneously.
2. according to the substrate processing apparatus of claim 1, wherein this cleaning section is arranged between this plated film section and this Electrolyzed Processing section.
3. according to the substrate processing apparatus of claim 1, wherein this cleaning section comprises remover liquid nozzle.
4. according to the substrate processing apparatus of claim 1, wherein this cleaning section comprises the drying device that is used for dry this substrate after cleaning.
5. according to the substrate processing apparatus of claim 1, wherein this Electrolyzed Processing section is by carrying out this Electrolyzed Processing as follows, promptly by pure water, ultra-pure water or have be no more than 500 μ s/cm conductivity the liquid supply between this substrate and this electrode behind the plated film.
6. according to the substrate processing apparatus of claim 1, wherein remove to process and at least repeatedly carry out twice at the plated film of this plated film section with in the electrolysis of this Electrolyzed Processing section.
7. according to the substrate processing apparatus of claim 1, wherein this plated film section comprises:
Anode;
Be arranged in the ion-exchanger between this anode and this substrate; And
Be used for supplying section the plating bath that plating bath is fed between this ion-exchanger and this substrate.
8. according to the substrate processing apparatus of claim 1, wherein this head section comprises the feeding contact element of energy opening/closing, and this element is used for the substrate periphery that remains on this head section lower surface is kept, and electric power is fed to this substrate.
9. substrate processing apparatus according to Claim 8, wherein this feeding contact element is by forming with a plurality of elements of arranged at predetermined intervals along this head section circumferencial direction.
10. substrate processing apparatus according to Claim 8, wherein this feeding contact element has the feed component that is formed by metal, and this metal does not react with metal film on this substrate.
11. according to the substrate processing apparatus of claim 1, wherein this Electrolyzed Processing section has and is used for transducer that the thickness of metal film on this substrate is surveyed.
12. according to the substrate processing apparatus of claim 1, wherein this plated film section and this electrolytic film plating section each all have power supply.
13. according to the substrate processing apparatus of claim 1, wherein this head section, this plated film section, this cleaning section and this Electrolyzed Processing section are installed in the machining cell.
14. according to the substrate processing apparatus of claim 13, wherein this machining cell has and is used for inert gas is fed to inert gas supply section in this machining cell.
15. according to the substrate processing apparatus of claim 1, wherein this Electrolyzed Processing section and this plated film section are connected on the common power supply, this power supply can switchably be connected to this Electrolyzed Processing section or this plated film section by the power supply selector switch simultaneously.
16. a substrate processing apparatus comprises:
Be used to keep the head section of substrate;
Substrate surface is electroplated to form the plated film section of electroplating metal film;
The cleaning section that is used for this substrate of cleaning behind this plated film; And
Electrolyzed Processing section with machined electrode, this section are used for that so described at least metal film on this substrate is carried out electrolysis and remove processing, promptly between liquid exists under the situation by substrate and this machined electrode after voltage is applied to cleaning;
Wherein this head section can move between this plated film section, this cleaning section and this electrolysis section, keeps this substrate simultaneously.
17. according to the substrate processing apparatus of claim 16, wherein this cleaning section is arranged between this plated film section and this Electrolyzed Processing section.
18. according to the substrate processing apparatus of claim 16, wherein this cleaning section comprises remover liquid nozzle.
19. according to the substrate processing apparatus of claim 16, wherein this cleaning section comprises the drying device that is used for dry this substrate after cleaning.
20. substrate processing apparatus according to claim 16, wherein this Electrolyzed Processing section is by carrying out this Electrolyzed Processing as follows, promptly by pure water, ultra-pure water or have the liquid that is no more than 500 μ s/cm conductivity and be fed to behind the plated film between this substrate and this electrode.
21., wherein remove to process and at least repeatedly carry out twice at the plated film of this plated film section with in the electrolysis of this Electrolyzed Processing section according to the substrate processing apparatus of claim 16.
22. according to the substrate processing apparatus of claim 16, wherein this plated film section comprises:
Anode;
Be arranged in the ion-exchanger between this anode and this substrate; And
Be used for supplying section the plating bath that plating bath is fed between this ion-exchanger and this substrate.
23. according to the substrate processing apparatus of claim 16, wherein this head section comprises the feeding contact element of energy opening/closing, this element is used for the substrate periphery that remains on this head section lower surface is kept, and electric power is fed to this substrate.
24. according to the substrate processing apparatus of claim 23, wherein this feeding contact element is by forming with a plurality of elements of arranged at predetermined intervals along this head section circumferencial direction.
25. according to the substrate processing apparatus of claim 24, wherein this feeding contact element has the feed component that is formed by metal, this metal and the metal film on this substrate do not react.
26. according to the substrate processing apparatus of claim 16, wherein this Electrolyzed Processing section has and is used for transducer that the thickness of the metal film on this substrate is surveyed.
27. according to the substrate processing apparatus of claim 16, wherein this plated film section and this electrolytic film plating section each all have power supply.
28. according to the substrate processing apparatus of claim 16, wherein this head section, this plated film section, this cleaning section and this Electrolyzed Processing section are installed in the machining cell.
29. according to the substrate processing apparatus of claim 28, wherein this machining cell has and is used for inert gas is fed to inert gas supply section in this machining cell.
30. according to the substrate processing apparatus of claim 16, wherein this Electrolyzed Processing section and this plated film section are connected on the common power supply, this power supply can switchably be connected to this Electrolyzed Processing section or this plated film section by the power supply selector switch simultaneously.
31. according to the substrate processing apparatus of claim 16, wherein this Electrolyzed Processing section carries out Electrolyzed Processing by acid solution being fed between substrate behind the plated film and this machined electrode.
32. a substrate processing method comprises:
Surface coating to substrate;
After this plated film, this substrate is cleaned; And
Followingly carry out electrolysis and remove processing, promptly by make ion-exchanger be present between this substrate and electrode after this cleaning, and handle have the liquid that is no more than 500 μ s/cm conductivity and be fed between this substrate and this electrode;
Wherein this plated film, this cleaning and this Electrolyzed Processing repeat twice at least.
33. a substrate processing method comprises:
Surface coating to substrate;
After this plated film, this substrate surface is cleaned;
Voltage is applied between this substrate and the machined electrode and the substrate surface after the cleaning is carried out Electrolyzed Processing by existing at liquid under the situation;
Wherein this plated film, this cleaning and this Electrolyzed Processing repeat twice at least.
34., ion-exchanger is present between this substrate and this machined electrode according to the substrate processing method of claim 33.
35. according to the substrate processing method of claim 33, wherein said liquid is pure water or has liquid or the electrolyte solution that is no more than 500 μ s/cm conductivity.
36. according to the substrate processing method of claim 33, wherein said liquid is a kind of acid solution.
37. a substrate processing method comprises:
The cross tie part material is embedded in the trickle raceway groove of the cross tie part that is used for forming on substrate surface;
Remove unnecessary cross tie part material and this substrate surface is flattened;
Further remove this cross tie part material by chemico-mechanical polishing, thus the recess that in described trickle raceway groove top, is formed for loading; And
Form diaphragm selectively at this recess that is used to load.
38. according to the substrate processing method of claim 37, wherein this diaphragm is a multi-layer compound film.
39. according to the substrate processing method of claim 37, wherein this diaphragm is to be formed by electrodeless plating.
40. a substrate processing method comprises:
The cross tie part material is embedded in the trickle raceway groove of the cross tie part that is used for forming on substrate surface;
Remove unnecessary cross tie part material and this substrate surface is flattened; Further remove this cross tie part material by Electrolyzed Processing, thus the recess that is formed for loading on described trickle raceway groove top; And
Form diaphragm selectively at this recess that is used to load.
41. according to the substrate processing method of claim 40, wherein this diaphragm is a multi-layer compound film.
42. according to the substrate processing method of claim 40, wherein this diaphragm forms by electrodeless plating.
43. according to the substrate processing method of claim 40, wherein this Electrolyzed Processing comprises:
Make machined electrode near or contact this substrate, by feeder electrode electric power is provided to this substrate simultaneously;
Ion-exchanger is arranged in this substrate and this machined electrode and this feeder electrode between at least one;
In this substrate and this machined electrode and this feeder electrode between at least one, wherein this ion-exchanger is arranged in therebetween the fluid supply; And
Between this machined electrode and this feeder electrode, apply voltage.
44. according to the substrate processing method of claim 43, wherein this liquid is pure water or has the liquid that is no more than 500 μ s/cm conductivity.
45. according to the substrate processing method of claim 40, wherein this Electrolyzed Processing comprises:
Make machined electrode near or contact this substrate, by means of feeder electrode electric power is provided to this substrate simultaneously;
Pure water or have be no more than 500 μ s/cm conductivity the liquid supply between this substrate and this machined electrode; And
Between this machined electrode and this feeder electrode, apply voltage.
46. a semiconductor device comprises having the substrate that is used to form at the trickle raceway groove of the cross tie part on surface, described trickle raceway groove is full of the cross tie part material, comprises that simultaneously the diaphragm of multi-layer compound film is formed on this cross tie part material surface.
47. according to the semiconductor device of claim 46, wherein said multi-layer compound film comprises thermal diffusion trapping layer and oxidation trapping layer.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002143725 | 2002-05-17 | ||
| JP2002143725A JP3933520B2 (en) | 2002-05-17 | 2002-05-17 | Substrate processing apparatus and substrate processing method |
| JP2002170588 | 2002-06-11 | ||
| JP2002382128 | 2002-12-27 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB038113015A Division CN100334691C (en) | 2002-05-17 | 2003-05-16 | Substrate processing apparatus and substrate processing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101101861A true CN101101861A (en) | 2008-01-09 |
Family
ID=29703651
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007101367018A Pending CN101101861A (en) | 2002-05-17 | 2003-05-16 | Substrate processing apparatus and substrate processing method |
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| Country | Link |
|---|---|
| JP (1) | JP3933520B2 (en) |
| CN (1) | CN101101861A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446829A (en) * | 2011-09-23 | 2012-05-09 | 上海华力微电子有限公司 | Device for electroplating copper in through hole of silicon wafer |
| CN102891104A (en) * | 2012-09-17 | 2013-01-23 | 上海华力微电子有限公司 | Method for improving Cu chemical mechanical polishing (CMP) efficiency |
| CN102897522A (en) * | 2012-10-22 | 2013-01-30 | 大同齿轮(昆山)有限公司 | Processing unit with high-efficient coordination of conveying and processing |
| CN104862772A (en) * | 2014-02-26 | 2015-08-26 | 盛美半导体设备（上海）有限公司 | Electrochemical polishing device and method |
| CN111020587A (en) * | 2019-12-23 | 2020-04-17 | 周兆梅 | Deplating liquid for removing nickel layer on copper surface and deplating process thereof |
| CN115787055A (en) * | 2022-11-30 | 2023-03-14 | 北京新创日诚科技有限公司 | Method and device for electrochemically removing mold inorganic coating |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007123523A (en) * | 2005-10-27 | 2007-05-17 | Ebara Corp | Polishing method, polishing device, and electrolytic polishing device |
-
2002
- 2002-05-17 JP JP2002143725A patent/JP3933520B2/en not_active Expired - Fee Related
-
2003
- 2003-05-16 CN CNA2007101367018A patent/CN101101861A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102446829A (en) * | 2011-09-23 | 2012-05-09 | 上海华力微电子有限公司 | Device for electroplating copper in through hole of silicon wafer |
| CN102891104A (en) * | 2012-09-17 | 2013-01-23 | 上海华力微电子有限公司 | Method for improving Cu chemical mechanical polishing (CMP) efficiency |
| CN102891104B (en) * | 2012-09-17 | 2015-07-29 | 上海华力微电子有限公司 | A kind of method improving Cu CMP efficiency |
| CN102897522A (en) * | 2012-10-22 | 2013-01-30 | 大同齿轮(昆山)有限公司 | Processing unit with high-efficient coordination of conveying and processing |
| CN102897522B (en) * | 2012-10-22 | 2015-12-09 | 大同齿轮(昆山)有限公司 | Conveying and the efficient processing unit (plant) coordinated of processing |
| CN104862772A (en) * | 2014-02-26 | 2015-08-26 | 盛美半导体设备（上海）有限公司 | Electrochemical polishing device and method |
| CN104862772B (en) * | 2014-02-26 | 2018-09-04 | 盛美半导体设备（上海）有限公司 | Electrochemical polish apparatus and method |
| CN111020587A (en) * | 2019-12-23 | 2020-04-17 | 周兆梅 | Deplating liquid for removing nickel layer on copper surface and deplating process thereof |
| CN115787055A (en) * | 2022-11-30 | 2023-03-14 | 北京新创日诚科技有限公司 | Method and device for electrochemically removing mold inorganic coating |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003338490A (en) | 2003-11-28 |
| JP3933520B2 (en) | 2007-06-20 |
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