CN101078845A - Display device - Google Patents
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- CN101078845A CN101078845A CN 200710104197 CN200710104197A CN101078845A CN 101078845 A CN101078845 A CN 101078845A CN 200710104197 CN200710104197 CN 200710104197 CN 200710104197 A CN200710104197 A CN 200710104197A CN 101078845 A CN101078845 A CN 101078845A
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Abstract
提供一种能够缩小边框面积的显示器件。该显示器件具备具有显示区域(3)和非显示区域的基板(1)。在上述基板(1)上的上述显示区域(3)内，形成有配置成矩阵状的多个像素电极(4)、与上述各像素电极(4)相对应配置的显示元件、与上述各像素电极(4)连接的开关用薄膜晶体管(5)。而且，上述各开关用薄膜晶体管(5)上连接有供给扫描信号的扫描线(6)和供给数据信号的数据线(7)。上述基板(1)的上述非显示区域具有安装用于驱动上述扫描线(6)和上述数据线(7)中的至少一个的驱动用驱动器的驱动用驱动器安装区域(11、14)，在驱动用驱动器安装区域(11、14)设有静电保护电路(30、40)。
Provided is a display device capable of reducing the frame area. The display device has a substrate (1) having a display area (3) and a non-display area. In the above-mentioned display area (3) on the above-mentioned substrate (1), there are formed a plurality of pixel electrodes (4) arranged in a matrix, display elements arranged corresponding to the above-mentioned pixel electrodes (4), and the above-mentioned each pixel The switching thin film transistor (5) connected to the electrode (4). Furthermore, a scan line (6) for supplying a scan signal and a data line (7) for supplying a data signal are connected to each of the switch thin film transistors (5). The above-mentioned non-display area of the above-mentioned substrate (1) has a driving driver installation area (11, 14) for installing a driving driver for driving at least one of the above-mentioned scanning line (6) and the above-mentioned data line (7). Electrostatic protection circuits (30, 40) are provided in driver installation areas (11, 14).
Description
Technical field
The present invention relates to have the display device of electrostatic discharge protective circuit.
Background technology
For example; in existing active-matrix liquid crystal display device; has following structure: in order to prevent bad phenomenon such as characteristic deviation that switch causes with the static of thin film transistor (TFT) and insulation breakdown; in the arranged outside of viewing area sweep trace with the electrostatic protection line and be configured in each sweep trace and sweep trace with the sweep trace between the electrostatic protection line with the electrostatic protection thin film transistor (TFT), near the switch usefulness thin film transistor (TFT) (for example with reference to patent documentation 1) that above-mentioned viewing area is provided with pixel electrode and is connected with this pixel electrode each intersection point of many sweep traces being arranged to matrix shape and many data lines.
But; in the above-mentioned existing liquid crystal display device; since in the arranged outside of viewing area sweep trace with electrostatic protection line and sweep trace with electrostatic protection with thin film transistor (TFT) and data line with electrostatic protection line and data line with the electrostatic protection thin film transistor (TFT); therefore in order to ensure their configuring area, there is the problem of frame area increase.
Patent documentation 1: TOHKEMY 2005-93459 communique
Summary of the invention
Therefore, the object of the present invention is to provide a kind of display device that can dwindle the frame area.
For achieving the above object, the feature of the display device of the present application is to have following structure.
The substrate (1) that possesses have the viewing area (3) and non-display area.In the above-mentioned viewing area (3) of aforesaid substrate (1), be formed with a plurality of pixel electrodes (4) of being configured to matrix shape, with the display element of the corresponding configuration of above-mentioned each pixel electrode (4), the switch that is connected with above-mentioned each pixel electrode (4) with thin film transistor (TFT) (5).And above-mentioned each switch is with being connected with sweep trace (6) that sweep signal is provided and the data line (7) that data-signal is provided on the thin film transistor (TFT) (5).The above-mentioned non-display area of aforesaid substrate (1) have at least one the driving that install to drive in above-mentioned sweep trace (6) and the above-mentioned data line (7) with the driving of driver with driver installation region (11,14), driving is with being provided with electrostatic discharge protective circuit (30,40) in driver installation region (11,14).
If employing the present invention because the driving in the outside, viewing area on substrate is with being provided with electrostatic discharge protective circuit in the driver installation region, so does not need to be used to dispose the configuring area of the special use of electrostatic discharge protective circuit, correspondingly can reduce the frame area.
Description of drawings
Fig. 1 is the equivalent circuit planimetric map as the major part of the liquid crystal display device of first embodiment of the present invention.
Fig. 2 is a part equivalent circuit planimetric map of using electrostatic discharge protective circuit at the sweep trace that scanning line driving shown in Figure 1 is provided with the driver installation region.
Fig. 3 drives the part equivalent circuit planimetric map that the data line that is provided with the driver installation region is used electrostatic discharge protective circuit at data line shown in Figure 1.
Fig. 4 is the thin film transistor (TFT) shown in Figure 1 and the partial sectional view of pixel electrode.
Fig. 5 is the cut-open view that scanning line driving shown in Figure 2 is used the part in the driver installation region.
Fig. 6 is the cut-open view that scanning line driving shown in Figure 2 is used the other parts in the driver installation region.
Fig. 7 is that data line shown in Figure 3 drives the cut-open view with the part in the driver installation region.
Fig. 8 is that data line shown in Figure 3 drives the cut-open view with the other parts in the driver installation region.
Fig. 9 is as the liquid crystal display device of second embodiment of the present invention, identical with Fig. 7 cut-open view.
Figure 10 is as the liquid crystal display device of second embodiment, identical with Fig. 8 cut-open view.
Figure 11 is as the liquid crystal display device of the 3rd embodiment of the present invention, identical with Fig. 2 equivalent circuit planimetric map.
Figure 12 is as the liquid crystal display device of the 4th embodiment of the present invention, identical with Figure 11 equivalent circuit planimetric map.
Embodiment
(first embodiment)
Fig. 1 represents the equivalent circuit planimetric map as the major part of the liquid crystal display device of first embodiment of the present invention.This liquid crystal display device fits together active base plate 1 and the counter substrate 2 that is positioned at this active base plate 1 top by the seal member of square frame shape (not shown) roughly, liquid crystal (not shown) is sealed between the two substrates 1,2 of seal member inboard.At this moment, the following part of active base plate 1 is outstanding from counter substrate 2.Below, the part that this is outstanding is called teat 1a.And the rectangular region that with dashed lines surrounds among Fig. 1 is viewing area 3.
At this, only represented 2 * 3 pixel electrodes 4 among Fig. 1, this is for drawing is simplified, and in fact is arranged with hundreds of * hundreds of or this is more than number.Around the viewing area on the active base plate 13, be provided with the common line 8 and the connected public connection pads 9 of square frame shape.Public connection pads 9 is being connected with the common electrode of being located at counter substrate 2 lower surfaces (not shown) by conductive material between substrate (not shown).
The right part of sweep trace 6, the scanning of drawing setting to downside by 3 the right side from the viewing area is with lead-in wire 10, and the teat 1a of the active base plate 1 that coexists goes up the scanning line driving right side, that dot and connects with lead-out terminal (terminal for connecting) 12 with the scanning that the upsides in the driver installation region 11 are provided with.The bottom of data line 7, the data of drawing setting by 3 the downside in the viewing area are with lead-in wire 13, and the data line left side, that dot on the teat 1a of the active base plate 1 that coexists drives the data that are provided with the upsides in the driver installation region 14 and connects with lead-out terminal (terminal for connecting) 15.
With the downside in the driver installation region 11, be provided with scanning input terminal 16 in scanning line driving.The scanning scanning lead-in wire 17 of input terminal 16 by being provided with at its downside, the scanning of its downside setting that coexists connects with external connection terminals 18.Be provided with data input terminal 19 in the data line driving with the downside in the driver installation region 14.Data are used by the data that are provided with at its downside with input terminal 19 and are gone between 20, and the data that its downside that coexists is provided with connect with external connection terminals 21.The common lead 22 of public connection pads 9 by being provided with at its downside, the public external connection terminals 23 that its downside that coexists is provided with connects.
In addition, though omitted diagram for drawing is simplified, but the scanning line driving chip of built-in scan line drive circuit portion also has been installed in the scanning line driving of active base plate 1 on driver installation region 11, this scan line drive circuit portion has and scanning input terminal 16 and scanning lead-out terminal 12 corresponding outer electrodes, the outer electrode of scanning line driving chip and scanning input terminal 16, and the outer electrode of scanning line driving chip engages (bonding) with lead-out terminal 12 by COG (Chip On Glass, chip is fixed on glass) method with scanning.Joint method both can be used the soldering welding method, also can be to use the method for anisotropic conductive adhesives.
In addition, on the data line of active base plate 1 drives with driver installation region 14, the data line chip for driving of built-in data line drive circuit portion also is installed, and the outer electrode of data line chip for driving and data are joined together by the COG method with lead-out terminal 15 with the outer electrode and the data of input terminal 19 and data line chip for driving.At this moment, joint method both can be used the soldering welding method, can be to use the method for anisotropic conductive adhesives again.
Then, Fig. 2 is illustrated in scanning line driving is used the part of electrostatic discharge protective circuit 30 with the sweep trace of driver installation region 11 settings equivalent circuit planimetric map.Be provided with sweep trace in driver installation region 11 with electrostatic protection line 31 in scanning line driving.Be arranged in parallel the 1st, the 2nd sweep trace between with lead-out terminal 12 (being that the scanning that is connected of same sweep trace 6 shown in Figure 1 is with going between 10) with electrostatic protection usefulness thin film transistor (TFT) (sweep trace electrostatic protection element) 32,33 at sweep trace with electrostatic protection line 31 and each scanning.
At this moment, the 1st sweep trace is nMOS types of diode connecting-type with electrostatic protection with film crystal 32, and gate electrode G and drain electrode D connect with lead-out terminal 12 with scanning, and source electrode S is connected with electrostatic protection line 31 with sweep trace.The 2nd sweep trace is floating gate types with electrostatic protection with thin film transistor (TFT) 33, and gate electrode G is not connected with any part, becomes floating gate electrode, and drain electrode D is connected with lead-out terminal 12 with scanning, and source electrode S is connected with electrostatic protection line 31 with sweep trace.
Sweep trace, is connected with common line 8 shown in Figure 1 by connecting with thin film transistor (TFT) 34 and connect with lead-in wire 35 with an end of electrostatic protection line 31.At this moment, the gate electrode G and the drain electrode D that connect with thin film transistor (TFT) 34 connect with electrostatic protection line 31 with sweep trace, and source electrode S connects with common line 8 by connecting with lead-in wire 35.
Then, Fig. 3 is illustrated in data line and drives the equivalent circuit planimetric map that the data line that is provided with driver installation region 14 is used the part of electrostatic discharge protective circuit 40.In driving with driver installation region 14, data line is provided with data line electrostatic protection line 41.Data line with electrostatic protection line 41 and each data be provided with between with lead-out terminal 15 (be data shown in Figure 1, that be connected with data line 7 with lead-in wire 13) the floating gate type data line with electrostatic protection with thin film transistor (TFT) (data line electrostatic protection element) 42.
At this moment, data line is not connected with any part with the gate electrode G of electrostatic protection with thin film transistor (TFT) 42, is floating gate electrode, and drain electrode D is connected with lead-out terminal 15 with data, and source electrode S is connected with electrostatic protection line 41 with data line.
Data line the 1st, the 2nd connects with thin film transistor (TFT) 43,44 (connect and use element) and is connected to use and go between 45 by what be arranged in parallel with an end of electrostatic protection line 41, with common line shown in Figure 18 connections.At this moment, the 1st gate electrode G and the drain electrode D that connects with thin film transistor (TFT) 43 connects with electrostatic protection line 41 with data line, and source electrode S connects with common line 8 by connecting with lead-in wire 45.The 2nd gate electrode G and the drain electrode D that connects with thin film transistor (TFT) 44 connects with common line 8 by connecting with lead-in wire 45, and source electrode S is connected with electrostatic protection line 41 with data line.
Below, the part concrete structure of this liquid crystal display device is described.At first, Fig. 4 represents the cut-open view of switch with the part of thin film transistor (TFT) 5 and pixel electrode 4.Be provided with gate electrode G, the sweep trace 6 (with reference to Fig. 1) that is connected with this gate electrode G that constitutes by chromium etc. and the scanning that is connected with this sweep trace 6 with lead-in wire 10 (with reference to Fig. 1) at the assigned position of active base plate 1 upper surface that constitutes by glass etc.
Upper surface at the active base plate 1 that comprises gate electrode G and sweep trace 6 etc. is provided with the gate insulating film 51 that is made of silicon nitride.The assigned position of gate insulating film 51 upper surfaces on gate electrode G is provided with the semiconductive thin film 52 that is formed by amorphous in nature silicon.Upper surface substantial middle portion at semiconductive thin film 52 is provided with the channel protection film (channelprotecting film) 53 that is formed by silicon nitride.
On the upper surface of the semiconductive thin film 52 of the both sides of channel protection film 53 upper surfaces and these both sides, be provided with the ohmic contact layer 54,55 that forms by n type amorphous silicon.The upper surface of an ohmic contact layer 54 and near the assigned position of gate insulating film 51 upper surfaces, be provided with the source electrode S that forms by chromium etc.At the assigned position of the upper surface of the upper surface of another ohmic contact layer 55 and gate insulating film 51, be provided with drain electrode D, data line 7 that is connected with this drain electrode D that forms by chromium etc. and the data that are connected with this data line 7 with lead-in wire 13 (with reference to Fig. 1).
Wherein, switch comprises gate electrode G, gate insulating film 51, semiconductive thin film 52, channel protection film 53, ohmic contact layer 54,55, source electrode S and drain electrode D with thin film transistor (TFT) 5.
With thin film transistor (TFT) 5 and the upper surface that comprises the gate insulating film 51 of data line 7 grades, be provided with the coating film 56 that forms by silicon nitride at switch.Assigned position at coating film 56 upper surfaces is provided with the pixel electrode 4 that is formed by transparent conductive materials such as ITO.Pixel electrode 4 connects by the contact hole 57 homology electrode S that the assigned position at coating film 56 is provided with.
Then, Fig. 5 represent scanning line driving with the 1st, the 2nd sweep traces in the driver installation region 11 with electrostatic protection with thin film transistor (TFT) 32,33, scanning with lead-out terminal 12 and sweep trace partial sectional view with electrostatic protection line 31.1st, the 2nd sweep trace uses thin film transistor (TFT) 5 basic identical with electrostatic protection with the structure of thin film transistor (TFT) 32,33 and switch shown in Figure 4, comprises gate electrode G, gate insulating film 51, semiconductive thin film 52, channel protection film 53, ohmic contact layer 54,55, source electrode S and drain electrode D.
Scanning is double-deckers of lower metal layer 12a and upper metal layers 12b with lead-out terminal 12, the chromium that lower metal layer 12a is provided with by the upper surface at active base plate 1 etc. forms, upper metal layers 12b exposes by the contact hole 57 that is arranged at gate insulating film 51 and is formed by the chromium that is provided with at the upper surface of the upper surface of lower metal layer 12a and gate insulating film on every side 51 thereof etc., and scanning is exposed by the peristome 58 that is arranged at coating film 56 with lead-out terminal 12.Sweep trace is made of the metal levels such as chromium in the upper surface setting of gate insulating film 51 with electrostatic protection line 31.
And; the lead-in wire 59 that the 1st sweep trace forms by the chromium that is provided with by the upper surface at active base plate 1 etc. with the gate electrode G of thin film transistor (TFT) 32 with electrostatic protection; lower metal layer 12a with lead-out terminal 12 is connected with scanning; drain electrode D is connected with the upper metal layers 12b of scanning with lead-out terminal 12, and source electrode S is being connected with electrostatic protection line 31 with sweep trace.The 2nd sweep trace is floating grid (with reference to Fig. 2) with electrostatic protection with the gate electrode G of thin film transistor (TFT) 33, and drain electrode D is connected with the upper metal layers 12b of scanning with lead-out terminal 12, and source electrode S is connected with electrostatic protection line 31 with sweep trace.
Then, Fig. 6 represents the connections thin film transistor (TFT) 34 of scanning line driving in the driver installation region 11, the partial sectional view that sweep trace is used electrostatic protection line 31 and public lead-in wire 35.Connect with the structure of thin film transistor (TFT) 34 and switch shown in Figure 4 and use the structure of thin film transistor (TFT) 5 basic identical, comprise gate electrode G, gate insulating film 51, semiconductive thin film 52, channel protection film 53, ohmic contact layer 54,55, source electrode S and drain electrode D.Public lead-in wire 35 is made of the metal levels such as chromium in the upper surface setting of active base plate 1.
And; the sweep trace that is provided with at the upper surface of gate insulating film 51 is with an end of electrostatic protection line 31; by the contact hole 60 that is arranged at gate insulating film 51; the upper surface of active base plate 1 of coexisting is connected the lead-in wire 61 that is provided with, be made of chromium etc. and connects with gate electrode G, and with the drain electrode D connection that is connected with thin film transistor (TFT) 34.The source electrode S that connects with thin film transistor (TFT) 34 connects with public lead-in wire 35 by the contact hole 62 that is arranged at gate insulating film 51.
Then, Fig. 7 represents that data line drives with the data lines in the driver installation region 14 with electrostatic protection with thin film transistor (TFT) 42, data with lead-out terminal 15 and the data line partial sectional view with electrostatic protection line 41.Data line uses the structure of thin film transistor (TFT) 5 basic identical with electrostatic protection with the structure of thin film transistor (TFT) 42 and switch shown in Figure 4, comprises gate electrode G, gate insulating film 51, semiconductive thin film 52, channel protection film 53, ohmic contact layer 54,55, source electrode S and drain electrode D.
Data are made of the metal levels such as chromium in the upper surface setting of gate insulating film 51 with lead-out terminal 15.Data line is made of the metal levels such as chromium in the upper surface setting of active base plate 1 with electrostatic protection line 41.And; data line becomes floating grid (with reference to Fig. 3) with electrostatic protection with the gate electrode G of thin film transistor (TFT) 42; drain electrode D is connected with lead-out terminal 15 with data, and source electrode S connects with electrostatic protection line 41 with data line by the contact hole 63 that is arranged at gate insulating film 51.
Then, Fig. 8 represents that the data line driving connects the partial sectional view of using electrostatic protection line 41 and public lead-in wire 45 with thin film transistor (TFT) 43,44, data line with the 1st, the 2nd in the driver installation region 14.1st, the 2nd connection uses the structure of thin film transistor (TFT) 5 roughly the same with the structure of thin film transistor (TFT) 43,44 and switch shown in Figure 4, comprises gate electrode G, gate insulating film 51, semiconductive thin film 52, channel protection film 53, ohmic contact layer 54,55, source electrode S and drain electrode D.Public lead-in wire 45 is made of the metal levels such as chromium in the upper surface setting of active base plate 1.
And the 1st gate electrode G that connects with thin film transistor (TFT) 43 is being connected with electrostatic protection line 41 with data line.The 2nd gate electrode G that connects with thin film transistor (TFT) 44 is connected with public lead-in wire 45.The 1st source electrode S that connects with thin film transistor (TFT) 43 is connected the drain electrode D that uses thin film transistor (TFT) 44 with the 2nd, connecting with public lead-in wire 45 by the contact hole 64 that is arranged at gate insulating film 51.The 1st drain electrode D that connects with thin film transistor (TFT) 43 is connected the source electrode S that uses thin film transistor (TFT) 44 with the 2nd, the identical contact hole 65 (Fig. 8 is for the ease of expression expression respectively) by being arranged at gate insulating film 51 is connected with electrostatic protection line 41 with data line.
But, in this liquid crystal display device, as shown in Figure 5, scanning is double-deckers of lower metal layer 12a and upper metal layers 12b with lead-out terminal 12, this lower metal layer 12a is arranged on the upper surface of active base plate 1, this upper metal layers 12b exposes by the contact hole 57 that is arranged at gate insulating film 51, and is located at the upper surface of the upper surface of lower metal layer 12a and gate insulating film on every side 51 thereof.
At this,, on active base plate 1, in same operation, form gate electrode G, lead-in wire 59 and scanning lower metal layer 12a with lead-out terminal 12 with identical metal material, for example chromium etc. if describe with reference to Fig. 1, Fig. 5 and Fig. 8.At this moment, side by side form each sweep trace 6, scanning three limits except that the right 8a (with reference to Fig. 1) with lead-in wire 10 and square common line 8.And, form scanning input terminal 16, scanning lead-in wire 17 and scanning external connection terminals 18 simultaneously.
And, forming gate insulating film 51, forming contact hole 57,64,65 (with reference to Fig. 8) and form each thin film transistor (TFT) afterwards, but the drain electrode D of thin film transistor (TFT) 32,33 is with to be layered in scanning integrally formed with the upper metal layers 12b of lead-out terminal 12 with the scanning on the lower metal layer 12a of lead-out terminal 12.By the formation of scanning with the upper metal layers 12b of lead-out terminal 12, the scanning that formation is made of the double-decker of lower metal layer 12a and upper metal layers 12b is with lead-out terminal 12, simultaneously, each gate electrode G is connected with lead-in wire 10 by scanning with each sweep trace 6 corresponding with it, and has connected the drain electrode D of thin film transistor (TFT) 32,33 with lead-in wire 10 by scanning.
In addition; when forming the drain electrode D and the scanning usefulness upper metal layers 12b of lead-out terminal 12 of sweep trace with electrostatic protection usefulness thin film transistor (TFT) 32,33; form each data line 7 and each data lead-in wire 13 corresponding with it; in addition; form the 1st, the 2nd drain electrode D that connects with thin film transistor (TFT) 43,44; form sweep trace electrostatic protection line 31 and data line electrostatic protection line 41; and form data input terminal 19, data lead-in wire 20 and data external connection terminals 21, also form the right 8a and the common lead 22 of square common line 8.
Therefore; double-deck scanning couples together with the drain electrode D of electrostatic protection with thin film transistor (TFT) 32,33 with lead-in wire the 10 and the 1st, the 2nd sweep trace with the scanning that lead-out terminal 12 will be connected with sweep trace 6; and double as is used to connect the interlayer contact site that protection is used the drain electrode of thin film transistor (TFT) 32,33 with the gate electrode G and the protection of thin film transistor (TFT) 32, can reduce the quantity of interlayer contact site.In addition, with on the upper metal layers 12b of lead-out terminal 12, directly engage the outer electrode of scanning line driving chip in this double-deck scanning with flip-chip (flip-chip) method.
In addition; this liquid crystal display device as illustrated in fig. 1 the scanning line driving on the teat 1a in 3 outsides, the viewing area on active base plate 1 with in the driver installation region 11; be provided with sweep trace and use thin film transistor (TFT) 34 with thin film transistor (TFT) 32,33 with being connected with electrostatic protection with electrostatic protection line the 31, the 1st, the 2nd sweep trace; therefore do not need to be used to dispose their special-purpose separately configuring area, correspondingly can dwindle the frame area.
Moreover; in this liquid crystal display device; because the data line on the teat 1a in 3 outsides, viewing area on active base plate 1 drives with in the driver installation region 14; being provided with data line is connected with thin film transistor (TFT) 43,44 with thin film transistor (TFT) 42 and the 1st, the 2nd with electrostatic protection with electrostatic protection line 41, data line; therefore do not need to be used to dispose their special-purpose separately configuring area, correspondingly can dwindle the frame area.
Below, the electrostatic protection action of the liquid crystal display device of said structure is described.At this moment, because bad of causing with the static of thin film transistor (TFT) 5 of switch produce, so illustrate that static is the situation of timing when positive static is invaded.
Suppose on a certain sweep trace 6, to have invaded positive static from the outside because of certain reason.So; become conducting state with electrostatic protection with thin film transistor (TFT) 32 with the sweep trace that lead-in wire 10 and scanning are connected on this sweep trace 6 with lead-out terminal 12 by scanning; electric current flows to sweep trace electrostatic protection line 31 with electrostatic protection with thin film transistor (TFT) 32 through the sweep trace that is attached thereto from this sweep trace 6, and sweep trace becomes noble potential with electrostatic protection line 31.
When sweep trace becomes noble potential with electrostatic protection line 31; the 2nd sweep trace that is connected with remaining sweep trace 6 becomes conducting state with electrostatic protection with thin film transistor (TFT) 33; electric current flows to remaining sweep trace 6 with electrostatic protection with thin film transistor (TFT) 33 through the 2nd sweep trace with electrostatic protection line 31 from sweep trace, and all sweep traces 6 become same potential.
And; when sweep trace becomes noble potential with electrostatic protection line 31; connect and become conducting state with thin film transistor (TFT) 34; electric current flows to common line 8 through connecting with thin film transistor (TFT) 34 with electrostatic protection line 31 from sweep trace, further flows to the opposite electrode of counter substrate 2 through conductive material between public connection pads 9 and substrate.Therefore, the positive static of invading sweep trace 6 because of certain reason from the outside is discharged, and prevents that switch is with bad phenomenon such as the characteristic deviation that causes because of static of thin film transistor (TFT) 5 and insulation breakdowns.
At this moment; because the connection of diode connecting-type can only be towards a direction conducting from drain electrode D to source electrode S with thin film transistor (TFT) 34; therefore even sweep trace is higher than with the current potential of electrostatic protection line 31 under the situation of current potential of common line 8; electric current also flows to common line 8 through connecting with thin film transistor (TFT) 34 with electrostatic protection line 31 from sweep trace; do not flow in the other direction to it, power therefore can not increase consumption.
On the other hand, suppose to have invaded positive static from the outside because of certain reason on a certain data lines 7.So; the data line that links to each other with this data line 7 with electrostatic protection with thin film transistor (TFT) 42 one-tenth conducting states; electric current flows to data line electrostatic protection line 41 with electrostatic protection with thin film transistor (TFT) 42 through coupled data line from this data line 7, and data line becomes noble potential with electrostatic protection line 41.
When data line is used 41 one-tenth noble potentials of electrostatic protection line; the data line that links to each other with remaining data line 7 with electrostatic protection with thin film transistor (TFT) 42 one-tenth conducting states; electric current flows to remaining data line 7 with electrostatic protection with thin film transistor (TFT) 42 through data line with electrostatic protection line 41 from data line, and all data lines 7 become same potential.
And; when data line is used 41 one-tenth noble potentials of electrostatic protection line; the 1st connects with 43 one-tenth conducting states of thin film transistor (TFT); electric current flows to common line 8 through the 1st connection with thin film transistor (TFT) 43 and public lead-in wire 45 with electrostatic protection line 41 from data line; further, flow to the opposite electrode of counter substrate 2 through conductive material between public connection pads 9 and substrate.Therefore, the positive static of invading data line 7 because of certain reason from the outside is discharged, and prevents that switch is with bad phenomenon such as the characteristic deviation that causes because of static of thin film transistor (TFT) 5 and insulation breakdowns.
But when data line was higher than the current potential of common line 8 with the current potential of electrostatic protection line 41, the 1st connected with 43 one-tenth conducting states of thin film transistor (TFT), and electric current flows to common line 8 from data line with electrostatic protection line 41.On the other hand, when the current potential of common line 8 was higher than the current potential of data line usefulness electrostatic protection line 41, the 2nd connected with 44 one-tenth conducting states of thin film transistor (TFT), and electric current flows to data line electrostatic protection line 41 from common line 8.And, when data line with the potential difference (PD) between electrostatic protection line 41 and the common line 8 hour, electric current to which direction all is difficult to flow, and can be not easy the power that increases consumption.
But as shown in Figure 7, data line is formed on the upper surface of active base plate 1 with electrostatic protection line 41.Therefore, as shown in Figure 7, data line is connected data line with on the electrostatic protection line 41 with electrostatic protection with the source electrode S of thin film transistor (TFT) 42 contact hole 63 by gate insulating film 51.Therefore, need contact hole 63.Second embodiment that the following describes is the mode that does not need contact hole 63.
(second embodiment)
Fig. 9 represents the cut-open view identical with Fig. 7 as the liquid crystal display device of second embodiment of the present invention.In this liquid crystal display device, data line is connected with electrostatic protection line 41 with data line in the upper surface setting of gate insulating film 51 with the source electrode S of thin film transistor (TFT) 42 with electrostatic protection.Therefore, do not need contact hole shown in Figure 7 63, can further reduce the interlayer contact site.
In addition; in the liquid crystal display device of this second embodiment; shown in Figure 10 as the cut-open view identical with Fig. 8; even data line is arranged on the upper surface of gate insulating film 51 with electrostatic protection line 41; also need to be used for to connect source electrode S with thin film transistor (TFT) 43 and be connected drain electrode D with thin film transistor (TFT) 44 with the 2nd and be connected to contact hole 64 on the public lead-in wire 45, data line is connected to the 1st contact hole 65 that is connected on the usefulness gate electrode G of thin film transistor (TFT) 43 with electrostatic protection line 41 with being used for the 1st.
(the 3rd embodiment)
Figure 11 represents the equivalent circuit planimetric map identical with Fig. 2 as the liquid crystal display device of the 3rd embodiment of the present invention.In this liquid crystal display device; be with the difference of structure shown in Figure 2; omitted the 2nd sweep trace with electrostatic protection usefulness thin film transistor (TFT) 33, the source electrode S that connects with thin film transistor (TFT) 34 has been connected on the Vgl terminal of being located in the scanning line driving usefulness driver installation region 11 71.
At this moment, be provided on the Vgl terminal 71 negative voltage on the sweep trace 6 that is applied to nonselection mode (for example Vgl=-20～-15V).The current potential Vgl of the sweep trace 6 of this nonselection mode (20～-15V) be lower than common line 8 current potential (for example Vcom=-5～+ 5V).Therefore, electric current flows to Vgl terminal 71 through connecting with thin film transistor (TFT) 34 with electrostatic protection line 31 from sweep trace.
(the 4th embodiment)
Figure 12 represents the equivalent circuit planimetric map identical with Figure 11 as the liquid crystal display device of the 4th embodiment of the present invention.In this liquid crystal display device, be with the difference of structure shown in Figure 11, omitted and connected with thin film transistor (TFT) 34, the end of sweep trace with electrostatic protection line 31 is connected on the Vgl terminal 71.So, electric current also can directly flow to Vgl terminal 71 with electrostatic protection line 31 from sweep trace.
(other embodiments)
Under situation shown in Figure 3, also can connect gate electrode G, the drain electrode D that the source electrode S with thin film transistor (TFT) 43 is connected with the 2nd with thin film transistor (TFT) 44 be connected on the Vgl terminal 71 the samely with shown in Figure 11 with the 1st.And, under situation shown in Figure 3, also can omit the 1st, the 2nd and connect, but in the same manner the end of data line with electrostatic protection line 41 is connected on the Vgl terminal 71 with situation shown in Figure 12 with thin film transistor (TFT) 43,44.
And; though scanning line driving drives with data line with driver installation region 11 and separates with driver installation region 14 in the above-described embodiment; but have on the market scanning line driving is integrated in a driver sale in the chip with driver and data line driving with driver; when using this single-chip driver; also can form scanning line driving continuously and drive with driver installation region and data line and use the driver installation region, in this zone, form sweep trace continuously or separately with electrostatic discharge protective circuit and data line electrostatic discharge protective circuit.
In addition; be formed on the teat 1a as one side of active base plate 1 though in the above-described embodiment scanning line driving is driven with driver installation region 14 with driver installation region 11 and data line; but a plurality of limits that also can make active base plate are as jut; form scanning line driving at each teat and use the driver installation region, in each zone electrostatic discharge protective circuit is set respectively with driver installation region and data line driving.
And in the respective embodiments described above, electrostatic discharge protective circuit needn't wholely be formed in the driver installation region, also can make the part of electrostatic discharge protective circuit exceed the driver installation region.
And, though in the respective embodiments described above explanation be with liquid crystal display device as the situation of display device, also can be applied to the display device that organic EL, electroluminescence device etc. have other display element.
Claims (28)
1. display device is characterized in that possessing:
Substrate (1) with viewing area (3) and non-display area;
Be configured to rectangular a plurality of pixel electrodes (4) in the above-mentioned viewing area (3) on aforesaid substrate (1);
Display element with the corresponding configuration of above-mentioned each pixel electrode (4);
The switch that is connected with above-mentioned each pixel electrode (4) thin film transistor (TFT) (5);
Be used for above-mentioned each switch is supplied with thin film transistor (TFT) (5) sweep trace (6) of sweep signal; And
Be used for above-mentioned each switch is supplied with thin film transistor (TFT) (5) data line (7) of data-signal;
The above-mentioned non-display area of aforesaid substrate (1) comprise be equipped with at least one the driving that drives in above-mentioned sweep trace (6) and the above-mentioned data line (7) with the driving of driver with driver installation region (11,14), be provided with electrostatic discharge protective circuit (30,40) with driver installation region (11,14) driving.
2. display device as claimed in claim 1 is characterized in that,
Electrostatic discharge protective circuit (30,40) is the sweep trace electrostatic discharge protective circuit (30) that is connected with above-mentioned sweep trace (6).
3. display device as claimed in claim 2 is characterized in that,
Above-mentioned sweep trace has sweep trace with electrostatic protection line (31) be configured in above-mentioned sweep trace with the sweep trace usefulness electrostatic protection element (32,33) between electrostatic protection line (31) and above-mentioned each sweep trace (6) with electrostatic discharge protective circuit (30).
4. display device as claimed in claim 3 is characterized in that,
Above-mentioned sweep trace comprises diode connecting-type thin film transistor (TFT) (32) with electrostatic protection element (32,33); the conducting under the effect of the static that above-mentioned sweep trace (6) go up to produce of this diode connecting-type thin film transistor (TFT) (32), and this static flowed to above-mentioned sweep trace with electrostatic protection line (31) from above-mentioned sweep trace (6).
5. display device as claimed in claim 3 is characterized in that,
Above-mentioned sweep trace comprises floating gate type thin film transistor (TFT) (33) with electrostatic protection element (32,33).
6. display device as claimed in claim 3 is characterized in that,
Above-mentioned sweep trace with electrostatic protection element (32,33) comprise diode connecting-type thin film transistor (TFT) (32) and with the floating gate type thin film transistor (TFT) of above-mentioned diode connecting-type thin film transistor (TFT) configuration in parallel.
7. display device as claimed in claim 3 is characterized in that,
Also have and connect the scanning lead-in wire (10) of above-mentioned sweep trace with electrostatic discharge protective circuit (30) and above-mentioned each sweep trace (6);
Above-mentioned driving be provided with in driver installation region (11) connected above-mentioned scanning with lead-in wire (10) and above-mentioned sweep trace with the scanning of electrostatic protection element (32,33) with lead-out terminal (12).
8. display device as claimed in claim 7 is characterized in that,
Above-mentioned each scanning has the exposed portions serve of exposing for the outer electrode that connects the scanning line driving chip externally with lead-out terminal (12).
9. display device as claimed in claim 7 is characterized in that,
Above-mentioned sweep trace has a plurality of electrodes (G, S, D) with electrostatic protection element (32,33);
Above-mentioned scanning with lead-out terminal (12) by the lower metal layer (12a) that is connected with the electrode (G) of electrostatic protection element (32,33) with above-mentioned sweep trace be connected above-mentioned sweep trace and constitute with the stepped construction of the upper metal layers (12b) on other electrode (D) of electrostatic protection element (32,33).
10. display device as claimed in claim 9 is characterized in that,
Above-mentioned sweep trace is the thin film transistor (TFT) with gate electrode (G), source electrode (S) and drain electrode (D) with electrostatic protection element (32,33);
Lower metal layer (12a) is connected with above-mentioned gate electrode (G), and above-mentioned upper metal layers (12b) is connected with above-mentioned drain electrode (D).
11. display device as claimed in claim 2 is characterized in that, also has to be formed on that aforesaid substrate (1) is gone up and around above-mentioned viewing area (3) common line (8) on every side.
12. display device as claimed in claim 11 is characterized in that,
Above-mentioned sweep trace has the static that makes above-mentioned sweep trace (6) go up generation flows to above-mentioned common line (8) with electrostatic protection element (32,33) through above-mentioned sweep trace connection element (34) with electrostatic discharge protective circuit (30).
13. display device as claimed in claim 12 is characterized in that,
Above-mentioned connection has gate electrode (G), source electrode (S) and drain electrode (D) with element (34), and comprises the diode connecting-type thin film transistor (TFT) (32) that has connected above-mentioned gate electrode (G) and above-mentioned drain electrode (D).
14. display device as claimed in claim 1 is characterized in that,
Above-mentioned electrostatic discharge protective circuit (30,40) is to be connected sweep trace on the above-mentioned sweep trace (6) with electrostatic discharge protective circuit (30) be connected data line on the above-mentioned data line (7) with electrostatic discharge protective circuit (40).
15. display device as claimed in claim 1 is characterized in that,
Electrostatic discharge protective circuit (30,40) is the data line electrostatic discharge protective circuit (40) that is connected on the above-mentioned data line (7).
16. display device as claimed in claim 15 is characterized in that,
Above-mentioned data line has data line with electrostatic protection line (41) be configured in above-mentioned data line with the data line usefulness electrostatic protection element (42) between electrostatic protection line (41) and above-mentioned each data line (7) with electrostatic discharge protective circuit (40).
17. display device as claimed in claim 16 is characterized in that,
Above-mentioned data line is the floating gate type thin film transistor (TFT) with electrostatic protection element (42).
18. display device as claimed in claim 16 is characterized in that,
Above-mentioned data line is arranged on the layer (51) identical with above-mentioned data line (7) with electrostatic protection line (41).
19. display device as claimed in claim 16 is characterized in that,
Also have connect above-mentioned data line with the data of electrostatic discharge protective circuit (40) and above-mentioned each data line (7) with lead-in wire (13), be provided with in above-mentioned driving and connected above-mentioned data are used electrostatic protection element (42) with lead-in wire (13) and above-mentioned data line data lead-out terminal (15) with driver installation region (14).
20. display device as claimed in claim 19 is characterized in that,
Above-mentioned each data have the exposed portions serve of exposing for the outer electrode that connects the data line chip for driving externally with lead-out terminal (15).
21. display device as claimed in claim 16 is characterized in that,
Also have and be formed on that aforesaid substrate (1) is gone up and around above-mentioned viewing area (3) common line (8) on every side.
22. display device as claimed in claim 21 is characterized in that,
Above-mentioned data line has the static that makes above-mentioned data line (7) go up generation flows to above-mentioned common line (8) with electrostatic protection element (42) through above-mentioned data line connection element (43,44) with electrostatic discharge protective circuit (40).
23. display device as claimed in claim 22 is characterized in that,
Connection has gate electrode (G), source electrode (S) and drain electrode (D) with element (43,44), and comprises a pair of thin film transistor (TFT) (43,44) that is connected with gate electrode (G) and drain electrode (D).
24. a display device is characterized in that possessing:
Be configured to rectangular a plurality of pixel electrodes (4);
Display element with the corresponding configuration of above-mentioned each pixel electrode (4);
The on-off element (5) that is connected with pixel electrodes (4);
The driving that drives above-mentioned display element by above-mentioned on-off element (5) is installed with the driver and the driving usefulness driver installation region (11,14) of having arranged the terminal for connecting (12,15) that is connected with the outer electrode of driver with above-mentioned driving; And
Be configured in the above-mentioned driving interior electrostatic discharge protective circuit (30,40) in driver installation region (11,14).
25. display device as claimed in claim 24 is characterized in that,
Above-mentioned electrostatic discharge protective circuit (30,40) has electrostatic protection line (31,41) and is configured in electrostatic protection element (32,33,42) between above-mentioned electrostatic protection line (31,41) and the above-mentioned on-off element (5).
26. display device as claimed in claim 24 is characterized in that,
Above-mentioned on-off element (5) is the thin film transistor (TFT) with gate electrode (G), source electrode (S) and drain electrode (D), and above-mentioned electrostatic discharge protective circuit (30,40) is the sweep trace electrostatic discharge protective circuit (30) that the gate electrode (G) to above-mentioned thin film transistor (TFT) is supplied with sweep signal.
27. display device as claimed in claim 24 is characterized in that,
Above-mentioned on-off element (5) is the thin film transistor (TFT) with gate electrode (G), source electrode (S) and drain electrode (D), and above-mentioned electrostatic discharge protective circuit (30,40) is the data line electrostatic discharge protective circuit (40) that the drain electrode (D) to above-mentioned thin film transistor (TFT) is supplied with data-signal.
28. display device as claimed in claim 24 is characterized in that,
Above-mentioned on-off element (5) is the thin film transistor (TFT) with gate electrode (G), source electrode (S) and drain electrode (D), and above-mentioned electrostatic discharge protective circuit (30,40) comprises the sweep trace usefulness electrostatic discharge protective circuit (30) of gate electrode (G) the supply sweep signal to above-mentioned thin film transistor (TFT) and the drain electrode (D) of above-mentioned thin film transistor (TFT) supplied with the data line electrostatic discharge protective circuit (40) of data-signal.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| JP2006142343A JP2007316105A (en) | 2006-05-23 | 2006-05-23 | Display device |
| JP142342/2006 | 2006-05-23 | ||
| JP142343/2006 | 2006-05-23 | ||
| JP2006142342A JP2007316104A (en) | 2006-05-23 | 2006-05-23 | Display device |
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| CN101078845A true CN101078845A (en) | 2007-11-28 |
| CN101078845B CN101078845B (en) | 2010-06-16 |
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| CN2007101041973A Expired - Fee Related CN101078845B (en) | 2006-05-23 | 2007-05-23 | Display device |
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| CN101078845B (en) | 2010-06-16 |
| JP2007316104A (en) | 2007-12-06 |
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