[go: up one dir, main page]

CN101069879B - Method for coating composition, semiconductor element and flat display - Google Patents

Method for coating composition, semiconductor element and flat display Download PDF

Info

Publication number
CN101069879B
CN101069879B CN2007101017565A CN200710101756A CN101069879B CN 101069879 B CN101069879 B CN 101069879B CN 2007101017565 A CN2007101017565 A CN 2007101017565A CN 200710101756 A CN200710101756 A CN 200710101756A CN 101069879 B CN101069879 B CN 101069879B
Authority
CN
China
Prior art keywords
coating
coating composition
substrate
nozzle
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101017565A
Other languages
Chinese (zh)
Other versions
CN101069879A (en
Inventor
拉尔夫·格罗滕米勒
沃尔夫冈·汉斯·察恩
冈特·胡尔茨奇
高桥修一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Publication of CN101069879A publication Critical patent/CN101069879A/en
Application granted granted Critical
Publication of CN101069879B publication Critical patent/CN101069879B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

本发明涉及一种用于高速制造均一的涂敷膜的涂敷方法以及提供利用该方法的半导体元件。一种将涂层组合物通过窄缝涂层法涂敷在基板上的涂敷方法,其特征在于使在30~100℃范围内维持一定温度的涂层组合物接触到基板上而进行涂敷。一种根据上述方法制造的半导体元件,特别是平板显示器。The present invention relates to a coating method for producing a uniform coating film at high speed and provides a semiconductor element using the method. A coating method for coating a coating composition on a substrate by a narrow slot coating method, characterized in that the coating composition maintained at a certain temperature in the range of 30 to 100 ° C is brought into contact with the substrate for coating . A semiconductor component, in particular a flat panel display, manufactured according to the method described above.

Description

涂层组合物的涂敷方法、半导体元件及平板显示器Coating method of coating composition, semiconductor element and flat panel display

技术领域 technical field

本发明涉及一种将涂敷液涂敷在基板上形成膜的方法。特别是本发明涉及一种在采用光刻法技术的电子零件等的制造工序、例如LSI、磁头等半导体元件、各种电路基板、平板显示器等的制造工序中,将光致抗蚀剂涂敷液(以下只简称“涂敷液”)涂敷在各种基板上时的涂敷方法。The present invention relates to a method of applying a coating liquid to a substrate to form a film. In particular, the present invention relates to a method of applying photoresist to a photoresist in the manufacturing process of electronic parts and the like using photolithography technology, such as semiconductor elements such as LSI and magnetic heads, various circuit boards, and flat panel displays. Liquid (hereinafter simply referred to as "coating liquid") coating method when coated on various substrates.

背景技术 Background technique

例如在平板显示器的制造过程中,在玻璃基板上涂敷感光性组合物。在以前,对于小尺寸的玻璃基板的膜采用旋涂法。但是,上述旋涂法不适合涂敷所谓第五代的1m2以上的大尺寸的基板。因此,作为与其不同的方法,有时也采用窄缝涂层法或狭槽涂层法。这些方法的特征在于,从在基板表面上移动的喷嘴中提供所需量的抗蚀剂组合物而形成覆膜。还有,根据不同情况,有时也固定喷嘴,移动玻璃基板。将这样涂敷后的基板继续干燥和硬化,除去组合物中的溶剂,进行进一步的加工处理。随着基板大型化,为了更高的生产效率和降低成本,需要更高速的制造方法。即,必须使在基板上移动的喷嘴的速度更快,且缩短涂敷所必要的时间。For example, in the manufacturing process of a flat panel display, a photosensitive composition is coated on a glass substrate. Conventionally, a spin coating method has been used for a film on a small-sized glass substrate. However, the above-mentioned spin coating method is not suitable for coating the so-called fifth-generation large-sized substrates of 1 m 2 or more. Therefore, as a different method, a slot coating method or a slot coating method may also be used. These methods are characterized in that a desired amount of resist composition is supplied from a nozzle that moves over the substrate surface to form a coating. Also, depending on the situation, the nozzle may be fixed and the glass substrate may be moved. The thus coated substrate is then dried and hardened to remove the solvent from the composition and subjected to further processing. As substrates become larger, higher-speed manufacturing methods are required for higher productivity and cost reduction. That is, it is necessary to increase the speed of the nozzle moving on the substrate and to shorten the time required for coating.

另一方面,那样可实现高速涂敷的涂敷液,必须具有特别的特性,特别重要的是,在涂敷过程中不会引起膜的剥离,不会发生涂敷不匀。一般,近来的窄缝涂敷的涂敷速度充其量达到150mm/s的程度。为了提高产品的生产效率,提高涂敷速度是有效的,但是对于增大这样的涂敷速度的上限,涂敷液的粘度成为重要的参量。预测可以根据降低涂敷液的粘度使涂敷速度增大。On the other hand, the coating liquid that can achieve high-speed coating must have special characteristics. It is particularly important that the film will not be peeled off during the coating process, and coating unevenness will not occur. Generally, the coating speed of the recent slit coating is about 150 mm/s at best. In order to improve the production efficiency of products, it is effective to increase the coating speed, but the viscosity of the coating liquid becomes an important parameter for increasing the upper limit of such a coating speed. It is predicted that the coating speed can be increased by lowering the viscosity of the coating liquid.

在光致抗蚀剂的领域,公知光致抗蚀剂组合物的粘度取决于固体成分浓度。光致抗蚀剂组合物的固体成分的大半是母体聚合物,通过增加其含有量而增大粘度。因此,可以通过降低固体成分浓度,即增加溶剂的含有量而降低粘度。但是,要使干燥后的光致抗蚀剂膜达到一定以上、通常为2μm以上的膜厚,如需要降低固体成分浓度、增加溶剂的含有量,则有必要涂敷多量的组合物以维持光致抗蚀剂组合物的一定膜厚。通过这样涂敷多量的组合物,在干燥工序中必须去除大量的溶剂,且因组合物本身的使用量也增加、成本提高,所以不优选。另外,也考虑光致抗蚀剂组合物的储藏寿命的损失。进而,也考虑由于溶剂的含有量多,干燥后的膜的均一性遭到损失。In the field of photoresist, it is well known that the viscosity of a photoresist composition depends on the solid content concentration. Most of the solid content of the photoresist composition is the matrix polymer, and the viscosity increases by increasing its content. Therefore, the viscosity can be lowered by lowering the solid content concentration, that is, by increasing the solvent content. However, in order to make the photoresist film after drying reach a film thickness of more than a certain value, usually more than 2 μm, if it is necessary to reduce the solid content concentration and increase the solvent content, it is necessary to apply a large amount of composition to maintain the photoresist film thickness. A certain film thickness of the resist composition. By applying a large amount of the composition in this way, a large amount of solvent must be removed in the drying process, and the usage-amount of the composition itself is also increased, which is not preferable because the cost increases. In addition, loss of shelf life of the photoresist composition is also considered. Furthermore, it is also considered that the uniformity of the film after drying is lost due to the large content of the solvent.

发明内容 Contents of the invention

如上所述,希望开发一种涂敷方法,该涂敷方法不降低涂敷液的固体成分浓度而实现高速涂敷,并且所制造的覆膜可得到无膜剥离和涂敷不匀的覆膜,涂敷前的涂层组合物具有良好的持久稳定性。As described above, it is desired to develop a coating method that achieves high-speed coating without reducing the solid content concentration of the coating liquid, and produces a coating that is free from film peeling and coating unevenness , the coating composition before coating has good long-lasting stability.

本发明的涂敷方法,是将涂层组合物通过窄缝涂层法涂敷在基板上的光致抗蚀剂涂敷方法,其特征在于使在30~100℃范围内维持一定温度的涂层组合物接触到基板上而进行涂敷。The coating method of the present invention is a photoresist coating method in which a coating composition is coated on a substrate by a slit coating method, and is characterized in that the coating is maintained at a certain temperature within the range of 30 to 100°C. The layer composition is applied in contact with the substrate.

另外,本发明的半导体元件或者平板显示器,其特征在于具有根据上述方法制造的抗蚀剂基板。In addition, the semiconductor device or the flat panel display of the present invention is characterized by having the resist substrate manufactured by the above-mentioned method.

本发明提供一种涂敷方法,该涂敷方法不改变涂敷液的固体成分浓度,即不增加溶剂含有量,且对制造工序不进行大的改变,可得到无膜剥离、均一的覆膜。进而,因为不必增加包含于涂层组合物的有机溶剂的含有量,所以不会损害涂层组合物的持久稳定性,实现稳定的制造。The present invention provides a coating method, the coating method does not change the solid content concentration of the coating liquid, that is, does not increase the solvent content, and does not greatly change the manufacturing process, and can obtain a uniform coating without film peeling . Furthermore, since it is not necessary to increase the content of the organic solvent contained in the coating composition, stable production is realized without impairing the long-term stability of the coating composition.

具体实施方式 Detailed ways

本发明的涂敷方法可以采用光致抗蚀剂膜形成用的涂层组合物而实施。具体可以用于在玻璃、陶瓷、塑料等的基板上形成保护膜、反射膜、树脂膜等的各种膜的场合。但是,有利的被用于特别是高速制造没有或少有膜表面缺陷的膜的场合。特别,在半导体元件或者平板显示器的制造过程等所制造的光致抗蚀剂膜的形成中,因为达到在产品性能方面无膜表面缺陷的效果,被要求在生产效率方面高速的进行覆膜形成,所以本发明的涂敷方法最佳。The coating method of the present invention can be implemented using a coating composition for forming a photoresist film. Specifically, it can be used when forming various films such as protective films, reflective films, and resin films on substrates such as glass, ceramics, and plastics. However, it is advantageously used especially in high-speed production of films with no or few film surface defects. In particular, in the formation of photoresist films produced in the manufacturing process of semiconductor devices or flat panel displays, etc., high-speed film formation is required in terms of production efficiency because of the effect of having no film surface defects in terms of product performance. , so the coating method of the present invention is the best.

通过本发明的涂敷方法涂敷的涂层组合物,如果被用于一般光致抗蚀剂膜的制造的话,没有特别的限定。用于光致抗蚀剂膜的制造的涂层组合物一般包括抗蚀剂树脂、感光剂、溶剂等。根据需要也可以包括其他添加剂,例如表面活性剂、颜料等。包含于涂层组合物的成分,根据目标光致抗蚀剂膜的种类等任意的选择。作为可以使用的聚合物,举例酚醛清漆树脂、具有硅氮烷结构的聚合物、丙烯酸聚合物、硅烷醇硅酮、聚酰亚胺等。使用的感光剂,可根据结合的聚合物的种类、适合于曝光的光源等适当地选择。具体举例含有萘醌二叠氮化合物、三联苯锍化合物、二联苯碘鎓化合物、三嗪化合物等。另外,作为溶剂,从可以均一地溶解或分散上述聚合物以及感光剂的溶剂中选择。具体举例丙二醇单甲醚乙酸酯、丙二醇单甲醚、醋酸丁酯、二甲苯、甲苯、壬烷、壬醇等。The coating composition applied by the coating method of the present invention is not particularly limited as long as it is used for the production of a general photoresist film. A coating composition used in the production of a photoresist film generally includes a resist resin, a photosensitive agent, a solvent, and the like. Other additives such as surfactants, pigments, etc. may also be included as needed. The components contained in the coating composition are arbitrarily selected according to the type of the target photoresist film and the like. Usable polymers include novolac resins, polymers having a silazane structure, acrylic polymers, silanol silicones, polyimides, and the like. The photosensitizer to be used can be appropriately selected according to the type of polymer to be bonded, a light source suitable for exposure, and the like. Specific examples include naphthoquinonediazide compounds, terphenylsulfonium compounds, biphenyliodonium compounds, triazine compounds, and the like. In addition, the solvent is selected from solvents that can uniformly dissolve or disperse the above polymer and photosensitizer. Specific examples include propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, butyl acetate, xylene, toluene, nonane, nonanol, and the like.

本发明的涂敷方法,是将上述那样的涂层组合物通过窄缝涂层法(有时也称为狭槽涂层法或旋涂法)涂敷。通过上述窄缝涂层法在基板上涂敷涂层组合物的场合,涂层组合物一般被储藏在供给容器中,从那里经过配管以及涂敷装置的喷嘴等被涂敷到基板上。在本发明中,被涂敷到该基板上之前的涂层组合物的温度非常重要。本发明的涂敷方法,通过控制该涂层组合物的温度,可以高速涂敷无膜剥离和无涂敷不匀的优良的涂敷膜。The coating method of the present invention is to apply the above-mentioned coating composition by the slot coating method (also called slot coating method or spin coating method in some cases). When coating a coating composition on a substrate by the above-mentioned slot coating method, the coating composition is generally stored in a supply container, and then applied to the substrate via piping and a nozzle of a coating device. In the present invention, the temperature of the coating composition before being applied to the substrate is very important. In the coating method of the present invention, by controlling the temperature of the coating composition, it is possible to coat an excellent coating film without film peeling and coating unevenness at high speed.

一般的,在洁净室内进行光致抗蚀剂膜的制造。洁净室内的温度通常为不到25℃、例如23~24℃。因此,形成光致抗蚀剂膜的基板,例如玻璃基板的温度与环境温度、即与洁净室的温度相等,为不到25℃的温度。Typically, photoresist film fabrication is performed in a clean room. The temperature in the clean room is usually less than 25°C, for example, 23 to 24°C. Therefore, the temperature of the substrate on which the photoresist film is formed, such as a glass substrate, is equal to the ambient temperature, that is, the temperature of the clean room, and is less than 25°C.

在本发明的涂敷方法中,使30~100℃、优选30~75℃的涂层组合物与基板接触且涂敷,形成光致抗蚀剂膜。虽然涂层组合物的温度必须为30℃以上,但是更高的温度更能改良涂敷表面的均一性、还具有提高单位面积的涂敷量的趋势,由此优选。另一方面,考虑维持涂层组合物中含有的成分,例如含有萘醌基的感光剂(分解温度一般为135℃左右)的稳定性,以及抑制由于涂层组合物中含有的溶剂(例如丙二醇单乙酸乙酯的沸点为146℃)的蒸发而使涂层组合物的粘度变化,温度必须为100℃以下,优选75℃以下。In the coating method of the present invention, a coating composition at 30 to 100° C., preferably 30 to 75° C., is brought into contact with a substrate and applied to form a photoresist film. Although the temperature of the coating composition must be 30° C. or higher, a higher temperature can improve the uniformity of the coated surface and tend to increase the coating amount per unit area, which is preferable. On the other hand, it is considered to maintain the stability of the ingredients contained in the coating composition, such as the photosensitizer containing naphthoquinone group (the decomposition temperature is generally about 135° C.), and to inhibit Ethyl acetate has a boiling point of 146°C) and the viscosity of the coating composition changes due to evaporation, and the temperature must be 100°C or lower, preferably 75°C or lower.

涂层组合物接触基板之前的温度,可以通过控制喷嘴的温度而实现。即,可以通过采用缠绕在喷嘴上的电加热器加热的方法,或在喷嘴中埋入配管,而且循环温水,从而使喷嘴温度上升的方法而实现。特别优选通过控制缠绕在喷嘴上的电热线圈的电压,而进行喷嘴的温度控制。另外,在连续制造光致抗蚀剂膜的场合,控制流入喷嘴的涂层组合物的温度,由此通过温度平衡也可控制与基板接触之前的涂层组合物的温度。这样的温度控制,可以通过控制用于将涂层组合物供给到喷嘴的供给容器的温度,以及控制连接供给容器与喷嘴的配管的温度而实现。但是,考虑到涂层组合物的稳定性,优选避免加热涂敷前的涂层组合物。因此,优选涂层组合物与基材接触之前加热。即,更优选通过控制喷嘴的温度,控制涂敷之前的涂层组合物的温度。The temperature of the coating composition prior to contacting the substrate can be achieved by controlling the temperature of the nozzle. That is, it can be realized by heating with an electric heater wound around the nozzle, or by embedding piping in the nozzle and circulating warm water to raise the temperature of the nozzle. It is particularly preferable to control the temperature of the nozzle by controlling the voltage of a heating coil wound around the nozzle. In addition, in the case of continuous production of a photoresist film, the temperature of the coating composition before it contacts the substrate can also be controlled by temperature balance by controlling the temperature of the coating composition flowing into the nozzle. Such temperature control can be achieved by controlling the temperature of a supply container for supplying the coating composition to the nozzle, and by controlling the temperature of piping connecting the supply container and the nozzle. However, in view of the stability of the coating composition, it is preferable to avoid heating the coating composition before coating. Accordingly, it is preferred that the coating composition be heated prior to contacting the substrate. That is, it is more preferable to control the temperature of the coating composition before application by controlling the temperature of the nozzle.

还有,打算通过窄缝涂敷,涂敷被用于以前的旋涂法等的组合物的场合,必须进行低粘度化。通常,增加溶剂含有量可实现低粘度化,但是,已得知增加溶剂含有量的话,即使是公认常温稳定性高的涂层组合物,也有其稳定性恶化的趋势。在本发明的涂敷方法中,通过窄缝涂敷,可涂敷溶剂含有量相对低的涂层组合物,但是,即使这样,与被用于旋涂法等的涂层组合物相比,溶剂含有量还是相对多。因此,优选在涂敷之前加热涂层组合物。Also, when applying a composition that is used in the conventional spin coating method, etc., by slit coating, it is necessary to reduce the viscosity. In general, lowering the viscosity can be achieved by increasing the solvent content, but it has been found that increasing the solvent content tends to deteriorate the stability of even a coating composition that is known to have high room temperature stability. In the coating method of the present invention, by narrow slit coating, it is possible to coat a coating composition with a relatively low solvent content, but even so, compared with a coating composition used for a spin coating method, etc., The solvent content is still relatively high. Therefore, it is preferred to heat the coating composition prior to application.

通过本发明的涂敷方法可以实现均一的膜表面的理由如下。作为牛顿流体的涂层组合物,通过喷嘴内狭窄间隙时的流速快的话,粘度有提高的趋势。由此,流速加快的话粘度提高,喷嘴的喷出量减少;喷出量减少流速下降的话,粘度下降,喷出量增加。因此,喷出量不稳定,结果会发生涂敷不匀。但是根据本发明的涂敷方法,通过喷嘴内时的温度相对高,粘度低,不易发生粘度引起的喷嘴内的紊流等,在基板上均一的供给涂层组合物。The reason why a uniform film surface can be realized by the coating method of the present invention is as follows. As a Newtonian fluid coating composition, the viscosity tends to increase when the flow rate when passing through a narrow gap in the nozzle is high. Therefore, when the flow velocity increases, the viscosity increases, and the discharge amount of the nozzle decreases; when the discharge amount decreases, the flow velocity decreases, the viscosity decreases, and the discharge amount increases. Therefore, the discharge amount becomes unstable, resulting in uneven coating. However, according to the coating method of the present invention, the temperature when passing through the nozzle is relatively high, the viscosity is low, and turbulence in the nozzle due to viscosity is less likely to occur, and the coating composition is uniformly supplied on the substrate.

根据本发明的涂敷方法,为了涂敷膜表面的均一性高,可以提高涂敷速度。一般的,与基板接触之前的涂层组合物的温度高的情况,可实现更高的涂敷速度。例如,由以前的窄缝涂敷的光致抗蚀剂膜的制造,也依赖于间隙(喷嘴与基板之间的距离),一般以通常50~100mm/s左右的速度进行,特别在要将单位面积的涂敷量保持到一定以上的场合,提高到一定以上的涂敷速度是困难的。然而,根据本发明的涂敷方法,可以达到100mm/s以上、更优选200mm/s以上的涂敷速度,该涂敷速度在惯用的窄缝涂敷中会发生膜剥离和涂膜表面的空隙。另外,涂敷速度虽然没有上限,但是若过高的话,涂敷膜的均一性将有被损害的倾向,但是通过调整涂层组合物的组成等,也可以实现超过该速度的涂敷。According to the coating method of the present invention, the coating speed can be increased so that the uniformity of the coating film surface is high. In general, higher coating speeds can be achieved with higher temperatures of the coating composition prior to contact with the substrate. For example, the production of a photoresist film coated with a conventional slit also depends on the gap (the distance between the nozzle and the substrate), and is generally carried out at a speed of about 50 to 100 mm/s, especially when the When the coating amount per unit area is kept above a certain level, it is difficult to increase the coating speed above a certain level. However, according to the coating method of the present invention, it is possible to achieve a coating speed of 100 mm/s or more, more preferably 200 mm/s or more, which would cause film peeling and voids on the coating film surface in conventional narrow-slit coating. . In addition, although there is no upper limit to the coating speed, if it is too high, the uniformity of the coating film tends to be impaired, but by adjusting the composition of the coating composition, etc., coating at a speed exceeding this speed can also be realized.

其后,可以与以前同样的方法对本发明的涂敷方法所形成的光致抗蚀剂膜的基板进行处理。一般,冷却到室温,通过烘培去除溶剂,以所需的图案进行图样曝光、成像,进而通过加热使光致抗蚀剂膜硬化。可根据制造的光致抗蚀剂膜的用途、涂层组合物的种类等,对这些处理进行任意选择。Thereafter, the substrate of the photoresist film formed by the coating method of the present invention can be processed in the same manner as before. Generally, after cooling to room temperature, the solvent is removed by baking, pattern exposure and imaging are performed in a desired pattern, and the photoresist film is hardened by heating. These treatments can be arbitrarily selected according to the use of the photoresist film to be produced, the kind of coating composition, and the like.

由这样的方法所制造的光致抗蚀剂膜或光致抗蚀剂基板,可以用于制造各种半导体元件。特别的,光致抗蚀剂膜的膜表面的均一性很重要,因此本发明的涂敷方法有利于制造具有优良性能的半导体元件。特别的,通过窄缝涂敷等,可以利用于要求使光致抗蚀剂膜在比较大的基板上形成的领域,例如特别优选平板显示器的制造。A photoresist film or a photoresist substrate manufactured by such a method can be used for manufacturing various semiconductor elements. In particular, the uniformity of the film surface of the photoresist film is important, and thus the coating method of the present invention is advantageous for the manufacture of semiconductor elements having excellent properties. In particular, slit coating and the like can be used in fields where it is required to form a photoresist film on a relatively large substrate, for example, the production of flat panel displays is particularly preferable.

实施例1~5以及比较例1Examples 1-5 and Comparative Example 1

将平均分子量为8,500g/摩尔的甲酚/2,4-二甲苯酚酚醛清漆树脂和感光性化合物(用2,1-重偶氮萘醌-4-磺酰脲氯化物部分酯化得到的2,3,4-三羟基二苯酮)按照重量比75∶25的比例混合得到的组合物溶解于溶剂中,进而以抗蚀剂的固体成分为基准添加0.5重量%的含氟表面活性剂作为润湿剂,调制成涂层组合物,上述溶剂为甲氧丙二醇乙酸酯和苄醇按照重量比95∶5的比例混合得到的。A cresol/2,4-xylenol novolak resin with an average molecular weight of 8,500 g/mole and a photosensitive compound (obtained by partial esterification with 2,1-diazonaphthoquinone-4-sulfonylurea chloride) 2,3,4-trihydroxybenzophenone) was dissolved in a solvent obtained by mixing a composition obtained by mixing a weight ratio of 75:25, and then 0.5% by weight of a fluorosurfactant was added based on the solid content of the resist As a wetting agent, prepared into a coating composition, the above-mentioned solvent is obtained by mixing methoxypropylene glycol acetate and benzyl alcohol in a weight ratio of 95:5.

将该涂层组合物移入供给容器,在23℃的环境下,采用TS窄缝-喷嘴涂布机,通过窄缝涂敷法涂敷到1100mm×1300mm的基板。此时,间隙为150μm。The coating composition was transferred into a supply container, and applied to a substrate of 1100 mm x 1300 mm by a slit coating method using a TS slit-nozzle coater in an environment of 23°C. At this time, the gap was 150 μm.

涂敷是通过安装在喷嘴上的电加热装置,一边控制喷嘴的温度(与涂层组合物的涂敷时的温度相等)为所规定的温度,一边以每次10mm/s提高涂敷速度,直到被认为出现空隙等的涂敷缺陷,测定最高涂敷速度。此时,为了保持一定的涂层组合物的温度,预先加热到与喷嘴的温度一样的温度。所得的结果如下。Coating is carried out by means of an electric heating device installed on the nozzle, while controlling the temperature of the nozzle (equal to the temperature at the time of coating the coating composition) to the specified temperature, while increasing the coating speed by 10mm/s each time, The highest coating speed was measured until coating defects such as voids were considered to occur. At this time, in order to maintain a constant temperature of the coating composition, it is preheated to the same temperature as that of the nozzle. The results obtained are as follows.

表1固体成分浓度和温度变化时的最高涂敷速度(mm/s)Table 1 Maximum coating speed (mm/s) when solid content concentration and temperature change

N/A:不进行测定N/A: Not determined

Claims (4)

1.一种光致抗蚀剂膜形成用的涂层组合物的涂敷方法,该方法将涂层组合物通过窄缝涂层法涂敷在基板上,其特征在于使通过仅控制涂层喷嘴的温度而在30~100℃范围内维持一定温度的涂层组合物接触到基板上以100mm/s以上的涂敷速度进行涂敷,并且该涂层组合物为牛顿流体。1. A coating method of a coating composition for photoresist film formation, the method coats the coating composition on a substrate by a slit coating method, and is characterized in that only the control coating is passed The temperature of the nozzle is maintained at a certain temperature in the range of 30-100°C, and the coating composition is applied on the substrate at a coating speed of 100 mm/s or more, and the coating composition is a Newtonian fluid. 2.如权利要求1所述的涂层组合物的涂敷方法,其特征在于将在30~75℃范围内维持一定温度的涂层组合物涂敷到基板上。2. The coating method of the coating composition according to claim 1, characterized in that the coating composition maintained at a certain temperature in the range of 30-75°C is applied to the substrate. 3.如权利要求1所述的涂层组合物的涂敷方法,其特征在于上述涂层喷嘴的温度的控制通过用缠绕在喷嘴上的电热加热器而进行,或者通过在喷嘴中埋入配管并使温水循环而进行。3. The coating method of coating composition as claimed in claim 1, it is characterized in that the control of the temperature of above-mentioned coating nozzle is carried out by using the electric heating heater that is wound on the nozzle, or by embedding piping in the nozzle And make warm water circulation and carry out. 4.如权利要求1~3任意一项所述的涂层组合物的涂敷方法,其特征在于涂层组合物是包括感光性材料、聚合物以及有机溶剂而形成的。4. The coating method of the coating composition according to any one of claims 1-3, characterized in that the coating composition is formed by including photosensitive materials, polymers and organic solvents.
CN2007101017565A 2006-05-09 2007-05-08 Method for coating composition, semiconductor element and flat display Expired - Fee Related CN101069879B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006130843A JP2007305697A (en) 2006-05-09 2006-05-09 Photoresist application method
JP2006130843 2006-05-09
JP2006-130843 2006-05-09

Publications (2)

Publication Number Publication Date
CN101069879A CN101069879A (en) 2007-11-14
CN101069879B true CN101069879B (en) 2012-09-26

Family

ID=38839397

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101017565A Expired - Fee Related CN101069879B (en) 2006-05-09 2007-05-08 Method for coating composition, semiconductor element and flat display

Country Status (4)

Country Link
JP (1) JP2007305697A (en)
KR (1) KR20070109884A (en)
CN (1) CN101069879B (en)
TW (1) TWI392972B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1370630A (en) * 2001-02-16 2002-09-25 松下电器产业株式会社 Viscous material coater and coating method
CN1500558A (en) * 2002-10-23 2004-06-02 凸版印刷株式会社 Coating liquid supply device and slit coating type coating device thereof
CN1737692A (en) * 2004-08-20 2006-02-22 东京毅力科创株式会社 Developing apparatus and method

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2042735A1 (en) * 1990-05-25 1991-11-26 Mark A. Spak Image reversal negative working photoresist
JP2816510B2 (en) * 1991-01-23 1998-10-27 東京エレクトロン株式会社 Liquid supply nozzle
DE4137325A1 (en) * 1991-11-13 1993-05-19 Hoechst Ag LIGHT-SENSITIVE MIXTURE BASED ON O-NAPHTHOCHINONDIAZIDES AND LIGHT-SENSITIVE MATERIAL PRODUCED THEREOF
JP3268949B2 (en) * 1993-07-20 2002-03-25 和光純薬工業株式会社 Far-ultraviolet light absorbing material and pattern forming method using the same
JP3638302B2 (en) * 1993-12-10 2005-04-13 大日本スクリーン製造株式会社 Coating liquid coating apparatus and coating method for substrate
JPH07328510A (en) * 1994-06-14 1995-12-19 Dainippon Screen Mfg Co Ltd Coating apparatus and coating method
JP3655153B2 (en) * 1998-12-25 2005-06-02 株式会社東芝 Coating film forming device
KR100367502B1 (en) * 1999-04-08 2003-01-10 주식회사 하이닉스반도체 Manufacturing method for fine pattern of semiconductor device
JP2003164785A (en) * 2001-12-03 2003-06-10 Seiko Epson Corp Coating method and coating device
JP2003170098A (en) * 2001-12-06 2003-06-17 Shimadzu Corp Slit coater
JP2005284115A (en) * 2004-03-30 2005-10-13 Nippon Zeon Co Ltd Radiation sensitive resin composition for slit spin coating and use thereof
JP2005349343A (en) * 2004-06-11 2005-12-22 Seiko Epson Corp Coating device, coating method, film, electronic component and electronic device
JP2007130516A (en) * 2005-11-08 2007-05-31 Toppan Printing Co Ltd Slit and spin coater, color filter manufacturing method and color filter

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1370630A (en) * 2001-02-16 2002-09-25 松下电器产业株式会社 Viscous material coater and coating method
CN1500558A (en) * 2002-10-23 2004-06-02 凸版印刷株式会社 Coating liquid supply device and slit coating type coating device thereof
CN1737692A (en) * 2004-08-20 2006-02-22 东京毅力科创株式会社 Developing apparatus and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
吴望一.第三章.《流体力学 上册》.北京大学出版社,1982,162-163. *

Also Published As

Publication number Publication date
TW200742942A (en) 2007-11-16
KR20070109884A (en) 2007-11-15
TWI392972B (en) 2013-04-11
JP2007305697A (en) 2007-11-22
CN101069879A (en) 2007-11-14

Similar Documents

Publication Publication Date Title
EP1389745B1 (en) Acetylenic diol surfactant solutions and methods of using same
WO2006068181A1 (en) Film, silica film and method of forming the same, composition for forming silica film, and electronic part
JP2016104551A (en) Porous laminate
CN104438021A (en) Method for preparing hydrophilic coating on hydrophobic surface
JP2005517784A5 (en)
CN106483769B (en) Diluent composition
JP2001284289A (en) Manufacturing method of microstructure
CN101144979A (en) Solvent for photoresist and photoresist composition for slit coating using the same
CN101069879B (en) Method for coating composition, semiconductor element and flat display
JP2020042260A (en) Composition for resist underlayer film and pattern forming method using the same
TW201030111A (en) Carrier solvent compositions, coatings compositions, and methods to produce thick polymer coatings
US5336529A (en) Method for coating circuitboards
US11975977B2 (en) Production method of silica film
JP2004149347A (en) Method for forming thin film on glass substrate and thin film-coated glass substrate
JP4720984B2 (en) Method for forming a coating film on a substrate having a step
US20050079291A1 (en) Method for coating substrates
KR20090124196A (en) Thinner composition for removing photosensitive resin and antireflection film
JPH0470659A (en) Photosensitive diazoquinone compound and positive type photosensitive resin composition formed by using this compound
KR102053921B1 (en) New fine silicon etching pattern forming method in a semiconductor manufacturing process
WO2022054624A1 (en) Primer layer forming composition for imprint
JP2001139808A (en) Polyimide precursor solution and polyimide film obtained therefrom
JPS6299747A (en) Film forming composition and determination of composition
JP6838369B2 (en) Negative photosensitive resin composition, curing pattern manufacturing method, cured product and electronic device
KR101109057B1 (en) Thinner composition for removing photoresist
KR20140051546A (en) Thinner composition

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C53 Correction of patent for invention or patent application
CB02 Change of applicant information

Address after: Tokyo, Japan

Applicant after: AZ Electronic Materials (Japan) K. K.

Address before: Tokyo, Japan

Applicant before: AZ electronic materials (Japan) Co., Ltd.

COR Change of bibliographic data

Free format text: CORRECT: APPLICANT; FROM: AZ ELECTRONIC MATERIALS (JAPAN) K.K. TO: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K.

C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: MERCK PATENT GMBH

Free format text: FORMER OWNER: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K.

Effective date: 20150420

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20150420

Address after: Darmstadt

Patentee after: Merck Patent GmbH

Address before: Tokyo, Japan

Patentee before: AZ Electronic Materials (Japan) K. K.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120926

Termination date: 20180508

CF01 Termination of patent right due to non-payment of annual fee