CN101069226B - Image display device and driving method thereof - Google Patents
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Abstract
本发明公开一种图像显示装置，其具有因通电而发光的发光元件(D1)，以及与发光元件(D1)串联连接并对发光元件(D1)进行发光控制的驱动元件(Q1)，在发光元件(D1)的不发光时，给驱动元件(Q1)加载反偏置。另外，加载给驱动元件(Q1)的反偏置，在每一个帧周期中加载，或者在所有的发光元件不发光时(包括帧全体不发光时)加载。从而降低驱动元件的阈值电压漂移量或者让驱动元件的阈值电压的漂移量对于每一个像素均一化。
The invention discloses an image display device, which has a light-emitting element (D1) that emits light when energized, and a driving element (Q1) that is connected in series with the light-emitting element (D1) and controls the light-emitting element (D1). When the element (D1) is not emitting light, a reverse bias is applied to the driving element (Q1). In addition, the reverse bias applied to the driving element (Q1) is applied every frame period, or applied when all light-emitting elements are not emitting light (including when the entire frame is not emitting light). Therefore, the threshold voltage shift amount of the driving element is reduced or the threshold voltage shift amount of the driving element is made uniform for each pixel.
Description
Technical field
The present invention relates to a kind of image display device and driving method thereof, and the driving method of e-machine with light-emitting component, particularly a kind of can suppress light-emitting component through the time deterioration image display device.
Background technology
Recently, Many researchers has been noticed electroluminescent cell (below be called " light-emitting component "), and the research that particularly this light-emitting component is applied to image display device or lighting device is just enlivening.
Have in the image display device of light-emitting component as described above, for example by formed thin film transistor (TFT) such as amorphous silicon or polysilicon (Thin Film Transistor: hereinafter to be referred as do " TFT ") etc., constitute each pixel with this light-emitting component, control by this TFT, and light-emitting component is set suitable current value, and brightness, tone or the color saturation etc. of each pixel are suitably controlled.
But by the formed TFT of amorphous silicon (hereinafter to be referred as making " aSi-TFT "), along with prolonged use, its gate threshold rises, and operation condition changes, and this point is known.This phenomenon be called aSi-TFT's " Vth drift ", perhaps be called " deterioration ".In addition, about aSi-TFT, also significantly change such as known its purposes, operation condition along with the carrying out of its deterioration.
For example, as LCD, aSi-TFT is used as on-off element, flow through in short time under the situation of this purposes of electric current of pulse type at the utmost point, the progress of deterioration is comparatively slow, in addition, if as organic illuminating element, flow through the sort of purposes of bigger steady current, the progress of deterioration is just very fast.
The deterioration of aSi-TFT produces two negative effects to image.One of them is because deterioration is carried out in each pixel scatteredly, causes the homogeneity deterioration of image, and another comparatively serious pixel that is deterioration develops is no longer replied, and the life-span has reached terminal point.
In addition, also exist to be called the circuit engineering that Vth proofreaies and correct, the Vth that this technology is removed aSi-TFT in the mode of circuit drifts about, and itself and vision signal are superposeed, thereby no matter the deterioration of Vth how, can both obtain uniform image.We can say if carrying out Vth proofreaies and correct, just can the influence that Vth is discrete be suppressed to about 1/5～1/10.
In addition, as carrying out the conventional art that Vth proofreaies and correct, for example also has non-patent literature as described below 1 etc.In this non-patent literature 1, a kind of Vth alignment technique based on the image display device that uses 4 TFT and 4 control lines is disclosed.
Non-patent literature 1:S.Ono et al., Proceedings of IDW ' 03,255 (2003)
But the correcting range of Vth has boundary, has surpassed correcting range in case exist the variation of Vth to develop into, and proofreaies and correct this problem with regard to being difficult to carry out Vth.
For example, Figure 13 is, the current characteristics stress with respect to the gate source voltage across poles of expression aSi-TFT (load: stress) and the figure of an example of change.Among the figure, the point that each curve and transverse axis intersect becomes the threshold voltage (Vth) of aSi-TFT.As shown in the figure, the positive bias voltage by will the becoming loading stress bias voltage of aSi-TFT conducting (be used for allow) continues to load the grid of giving aSi-TFT, allows the current characteristics of aSi-TFT drift about to the right from leftmost curve (initial characteristic).
For example, the Vth of the 2nd curve is about 10V from the right side, and is relative therewith, and in the curve of the rightmost side, Vth is about 15V, and its difference is about 5V, can learn that the threshold voltage shift of driving element develops rapidly.Therefore, in the zone that the drift of the threshold voltage of such driving element develops rapidly, the correction of carrying out Vth is limited, and the correcting range of Vth is also limited naturally.
In addition, even under the situation in the zone that the drift of the threshold voltage that does not reach driving element as described above develops rapidly, also there are the following problems: when promptly the threshold voltage shift of driving element develops for each pixel scatteredly, carry out suitable Vth and proofread and correct very difficulty in each pixel.
Summary of the invention
The present invention proposes for solving described problem, and its purpose is to provide a kind of drift value of the threshold voltage by reducing driving element to improve the image display device of reliability.In addition, thus the present invention also aims to provide a kind of by allowing the drift value of threshold voltage of driving element for each pixel and homogenization has improved the image display device of homogeneity of pixel and the driving method of image display device.
For solving described problem, realize purpose, the 1st described image display device of the present invention is characterised in that to have: carry out luminous light-emitting component by energising; And be connected with described light-emitting component, this light-emitting component is carried out the driving element of light emitting control; When described light-emitting component not luminous, load reverse bias for described driving element.
In addition, the 2nd described image display device of the present invention is characterised in that: described driving element is loaded reverse bias in each frame period.
In addition, the 3rd described image display device of the present invention is characterised in that: load the anti-bias voltage of giving described driving element, load more than the 1msec at least in each frame period.
In addition, the 4th described image display device of the present invention is characterised in that: load the time of reverse bias for described driving element, be more than 5% of frame period.
In addition, the 5th described image display device of the present invention is characterised in that: the time of loading reverse bias for described driving element is more than 50% of average luminescence time as the mean value of the fluorescent lifetime in each frame period of described light-emitting component.
In addition, the 6th described image display device of the present invention is characterised in that: described light-emitting component is made of a plurality of light-emitting components, when these a plurality of light-emitting components are not luminous, loads reverse bias for described driving element.
In addition, the 7th described image display device of the present invention is characterised in that: when not the using of device, load reverse bias for described driving element.
In addition, the 8th described image display device of the present invention is characterised in that: the absolute value that loads the anti-bias voltage of giving described driving element is more than the 1V.
In addition, the 9th described image display device of the present invention is characterised in that: load the time of reverse bias for described driving element, be at least more than the time in 1 frame period.
In addition, the 10th described image display device of the present invention is characterised in that: the time of loading reverse bias for described driving element, be below 20% of service time of device.
In addition, the 11st described image display device of the present invention is characterised in that: loading the voltage waveform of the reverse bias of giving described driving element, is the waveform with specified period.
In addition, the 12nd described image display device of the present invention is characterised in that: the voltage waveform that loads the reverse bias of giving described driving element is a decaying wave.
In addition, the 13rd described image display device of the present invention is characterised in that: the electric field intensity that between the loading electrode of this driving element, is produced by loading the reverse bias of giving described driving element, and below 1MV/cm.
In addition, the 14th described image display device of the present invention is characterised in that: described light-emitting component is made of a plurality of light-emitting components; Load the anti-bias voltage of giving described driving element, for all driving elements, equate.
In addition, the 15th described image display device of the present invention is characterised in that: loading the reverse bias of giving described driving element, is under the situation of n transistor npn npn at described driving element, is lower than this transistorized threshold voltage; At described driving element is under the situation of p transistor npn npn, is higher than this transistorized threshold voltage.
In addition, the 16th described image display device of the present invention is characterised in that to have: carry out luminous light-emitting component by energising; Be connected with described light-emitting component, drive the driving element of this light-emitting component; And when described light-emitting component not luminous, described driving element is loaded the control gear of reverse bias.
In addition, the driving method of the 17th described image display device of the present invention is characterised in that, comprising: make the luminous step of light-emitting component; And when light-emitting component not luminous, load the step of reverse bias to driving element.
In addition, the driving method of the 18th described image display device of the present invention is characterised in that: load the anti-bias voltage of giving described driving element, load in each frame period.
In addition, the driving method of the 19th described e-machine of the present invention is characterised in that to have: to the step of described image display device input power supply OFF information; After the input of described power supply OFF information, give the step of the described driving element loading reverse bias of described image display device; And after the reverse bias at described driving element loaded, the power supply of described image display device became the step of OFF.
In addition, the driving method of the 20th described e-machine of the present invention is characterised in that to have: to the step of described image display device input power source ON information; After the input of described power source ON information, the described driving element of described image display device is loaded the step of reverse bias; And after the reverse bias at described driving element loads, carry out the step of the image demonstration of described image display device.
In addition, the driving method of the 21st described e-machine of the present invention is characterised in that to have: will be made as the step of holding state by the display frame that described image display device constituted; And be in the holding state in described display frame, the described driving element of described image display device is loaded the step of reverse bias.
According to the present invention, the drift value of the threshold voltage of driving element can be reduced, and long-term threshold voltage compensation can be easily carried out, improve the picture element reliability of image display device.In addition,, can suppress threshold power drift value discrete of the driving element in each pixel, therefore can improve the homogenization of picture element according to the present invention.
Description of drawings
Fig. 1 is the figure of expression corresponding to the configuration example of the image element circuit of 1 pixel of image display device involved in the present invention.
Fig. 2 is carried out the figure of one of drive waveforms example of the organic illuminating element of luminous not light emitting control for expression.
Fig. 3 for expression TFT with respect to the variation of Vgs, Ids and (Ids)
1/2The curve map of characteristic.
Fig. 4 is the figure of the configuration example of the expression image element circuit different with Fig. 1 involved in the present invention.
The figure of Fig. 5 configuration example with Fig. 1,2 different image element circuits involved in the present invention for expression.
Fig. 6 is the figure of the configuration example of the expression image element circuit different with Fig. 1～3 involved in the present invention.
Fig. 7 is illustrated under the situation of not giving driving element Q1 loading reverse bias in the vision circuit shown in Figure 1 the figure of the time of lighting of driving element Q1 and the relation between the threshold voltage shift (lighting reverse bias continuously: do not load).
Fig. 8 for the time of lighting of the driving element Q1 in the image element circuit shown in the presentation graphs 1 and the relation between the threshold voltage shift (light: 10 minutes, do not light: 20 minutes, when not lighting: the figure that loads reverse bias (1V)).
Fig. 9 for the time of lighting of the driving element Q1 in the image element circuit shown in the presentation graphs 1 and the relation between the threshold voltage shift (light: 10 minutes, do not light: 20 minutes, when not lighting: the figure that loads reverse bias (5V)).
Figure 10 is the time of lighting of the driving element Q1 in the image element circuit shown in the presentation graphs 1 and the figure of the relation between the threshold voltage shift (16 hours daytimes (lighting: 3 minutes, do not light: 17 minutes), 8 hours nights (not lighting), reverse bias: do not load).
Figure 11 ((lights: 3 minutes for the time of lighting and the relation between the threshold voltage shift of the driving element Q1 in the image element circuit shown in the presentation graphs 1 16 hours daytimes, do not light: 17 minutes), 8 hours nights (not lighting), when not lighting (originally 1 hour: the figure that loads reverse bias (5V), other: do not load reverse bias).
Figure 12 for the time of lighting of the driving element Q1 in the image element circuit shown in the presentation graphs 1 and the relation between the threshold voltage shift (light: 3 minutes, do not light: 17 minutes, when not lighting (originally 5 minutes: the figure that loads reverse bias (5V)).
Figure 13 is the current characteristics of expression with respect to the gate source voltage across poles of aSi-TFT, stress and one of change the figure of example.
Figure 14 is the process flow diagram of the driving method of the e-machine that is used for illustrating that one embodiment of the present invention is related.
Figure 15 is the process flow diagram of the driving method of the e-machine that is used for illustrating that another embodiment of the present invention is related.
Figure 16 is the process flow diagram of the driving method of the e-machine that is used for illustrating that another embodiment of the present invention is related.
Figure 17 is the circuit diagram of the image element circuit that constitutes the related image display device of embodiment 4.
Figure 18 is the sequential chart of the action of the image display device of explanation Figure 17.
Among the figure: D1, D2, D3, D4-light-emitting component, Q1, Q2, Q3a, Q4-driving element, Q3b-on-off element, Qth-switching transistor, U1, U2, U3, U4-controller.
Embodiment
＜image display device 〉
In the conventional art, exist because of the Vth drift of driving element causedly, along with the process of using, the deterioration of driving element develops this problem rapidly, and the degree of deterioration develops for each pixel scatteredly and makes this problem of homogeneity deterioration of image.The present inventor carries out labor by the action to light-emitting component in the image display device and driving element, has obtained the present invention who addresses these problems.
With reference to the accompanying drawings, embodiment and the embodiment to image display device involved in the present invention at length describes.In addition, can not limit the present invention by following embodiment and embodiment.
In the image display device of present embodiment, a plurality of pixel arrangement are rectangular, dispose light-emitting component and driving element in each pixel.
Fig. 1 is the figure of expression corresponding to the configuration example of the image element circuit of 1 pixel of image display device involved in the present invention.Image element circuit shown in the figure, the action that particularly is used for driving element Q1 is the figure that the center describes, and shows the circuit structure of simplification.
Image element circuit shown in Fig. 1, driving element Q1 that have light-emitting component D1, is connected in series with light-emitting component D1 and the controller U1 of control driving component Q1.Light-emitting component D1 for example is an organic illuminating element, and the high-pressure side terminal of the anode tap of self and on-load voltage (below be called " VP terminal ") is connected, the cathode terminal of self with for example as distolateral being connected of drain electrode of the driving element Q1 of aSi-TFT.On the other hand, the distolateral low-pressure side terminal (below be called " VN terminal ") with on-load voltage of the source electrode of driving element Q1 is connected, and the distolateral output terminal with controller U1 of grid is connected.Controller U1 controls the grid voltage of driving element Q1, is to be used for loading the control gear of reverse bias to driving element Q1, for example is made of the capacity cell of single or multiple TFT, capacitor and so on, the control line of control TFT etc.In addition, connecting and composing shown in the figure is that light-emitting component D1 is connected with the drain side of driving element Q1, and the formation of " voltage-controlled type " that the gate terminal of driving element Q1 is controlled, is called " grid control/drain drives " especially.
Next the action to the image element circuit shown in Fig. 1 describes.Have in the image element circuit of light-emitting component, generally through between the preparatory stage, between the threshold voltage detection period, write during and between light emission period during these 4 and move.
At first, between the preparatory stage in, in light-emitting component D1 (in more detail, stray capacitance that light-emitting component D1 self is had), accumulate the electric charge of regulation.The reason of accumulating electric charge between this preparatory stage in light-emitting component D1 is, when the threshold voltage of driving element Q1 detects, and supplying electric current, electric current vanishing up between drain electrode-source electrode of driving element Q1.
Next, between the threshold voltage detection period in, VP terminal and VN terminal are made as roughly the same current potential, detect that voltage is Vth between the gate-to-source of the driving element Q1 that produced this moment, and store/remain on and omitted in the illustrated capacity cell etc.In addition, about the action of storage/maintenance threshold voltage in this capacity cell, the electric charge of being accumulated in light-emitting component D1 in utilizing between the preparatory stage carries out.
And then, during writing in, be superimposed with the assigned voltage of data-signal in will be between the threshold voltage detection period among the detected Vth, store/be kept at and omitted in illustrated capacity cell etc.
At last, between light emission period in, with the assigned voltage that institute in during writing store/keeps, loading is to driving element Q1, so that light-emitting component D1 is carried out light emitting control.
Controller U1 carries out this a series of action by order according to the rules, controls the electric current that flows through among the light-emitting component D1.By this control, brightness (gray scale), tone and color saturation etc. with each pixel of image display device are set at suitable value.
Next, the control action to correlation control unit U1 of the present invention describes.At first, controller U1 controls, so that make, loads reverse bias for when light-emitting component D1 not luminous driving element Q1.In addition, this control can be carried out with each frame period.In addition, also can when not the using of image display device, load reverse bias.
Here, will be defined as the cycle that shown image is rewritten in the display to image display device the frame period.For example, if the display that drives with 60Hz, 1 frame period was 16.67ms just.In general, in 1 frame period of this 16.67ms, repeat following sequential (sequence): i.e. organic illuminating element, based on the driving voltage definite corresponding to the grey level, and carry out luminous.
Fig. 2 has been implemented the figure of one of drive waveforms example of the organic illuminating element of luminous not light emitting control for expression.Among the figure, Vgs is the potential difference (PD) (gate source voltage across poles) between the gate-source of driving transistors, and Voled is a potential difference (PD) between the anode negative electrode of organic illuminating element.As shown in the figure, organic illuminating element drove with the cycle of 16.67ms (60Hz), repeated not luminous action with this cycle simultaneously.
In addition, more than during not the using of said image display device, be meant each image element circuit, the state of not switching in all light-emitting components of view data not being offered.
In addition, more than said reverse bias, be meant that at driving element Q1 be under the situation of N transistor npn npn, in general transistorized gate source voltage across poles Vgs (Vgs=Vg (grid potential)-Vs (source potential)) is lower than transistorized threshold voltage vt h.
In addition, be under the situation of P transistor npn npn at driving element Q1, in general transistorized gate source voltage across poles Vgs (definition with the situation of N transistor npn npn under the same) is higher than transistorized threshold voltage.
For example, under the situation of N transistor npn npn, if threshold voltage vt h is 2V, grid potential Vg is-3V, and drain potential Vd is 10V, and source potential Vs is 0V, and Vgs=Vg-Vs=-3V then is because therefore Vgs＜Vth is equivalent to reverse bias.In addition, the value of anti-bias voltage self is represented by the value of Vgs.
According to the definition of aforesaid reverse bias, give about loading whether the voltage of driving element Q1 is reverse bias, the value of threshold voltage vt h is very important.Therefore be example with the N transistor npn npn below, the calculation method of asking of the threshold voltage vt h of the driving element Q1 that is made of TFT is described.
That is put down in writing as described above is such, and the gate source voltage across poles of establishing TFT is Vgs, and the drain source voltage across poles is Vds (Vds=Vd (drain potential)-Vs (source potential)), and threshold voltage is Vth.In addition, the drain source electrode current that is flow through among the TFT is represented by Ids.At this moment, this Ids is similar to such formula shown below respectively in the zone of saturation and the range of linearity.
(a) during Vgs-Vth＜Vds (zone of saturation)
Ids＝β×[(Vgs-Vth)
2] …(1)
(b) during Vgs-Vth 〉=Vds (range of linearity)
Ids＝2×β×[(Vgs-Vth)×Vds-(1/2×Vds
2)] …(2)
The cm of unit), channel length (L: the cm of unit), the electric capacity of the per unit area of dielectric film (followingly is Cox: the F/cm of unit here, the β shown in formula (1) and the formula (2) is the characteristic coefficient of TFT, (followingly is W: in the channel width that has defined TFT
2), mobility (below be called μ: the cm of unit
2/ Vs) time, represent like that by following formula.
β＝1/2×W×μ/(L×Cox) …(3)
Here the zone of saturation is considered.In the formula (1),, then be expressed as following formula if get the square root of Ids.
(Ids)
1/2＝(β)
1/2×(Vgs-Vth) …(4)
As shown in Equation (4), (Ids)
1/2Proportional with (Vgs-Vth).Also promptly, the square root of drain current Ids that means TFT with respect to grid voltage (Vgs) for linear.In addition, can learn, make (Ids) from formula (4)
1/2=0 Vgs equals Vth.Using the Vth of this contextual definition TFT, is the method that is generally adopted, and also can use this method to calculate the Vth of TFT among the present invention.
Fig. 3 for expression with respect to the Ids of the variation of the Vgs of TFT with (Ids)
1/2The curve map of characteristic.Curve map shown in the figure is in TFT, and Vds is made as 10V (fixing), with Vgs from the-Ids of 10V when 15V changes and (Ids)
1/2Draw an example of coming out.The left side of the longitudinal axis is carried out the logarithm drawing to drain current Ids and is obtained, and the right side of the longitudinal axis is the square root (Ids) to drain current
1/2Carrying out linear the drawing obtains.As shown in the drawing, in TFT carries out the scope of the Vgs=3～10V in the zone of saturation of turn-on action, keeping (Ids)
1/2Linearity.
In addition, in general, if the n type TFT of amorphous silicon, then Vth just is below the 5V.Therefore, can as asking calculation Vth, calculate use Fig. 3.(Ids) of this figure
1/2On the family curve by the point shown in ' zero ', be Vgs=6V and 8V, the X intercept of the straight line by these two points is (Ids) in the formula (4)
1/2=0, also be the Vgs of (Vgs-Vth)=0 o'clock, so this X intercept threshold voltage vt h that is TFT.Can read from the curve map shown in the figure, Vth is 2.13V.
Next, the load time when loading reverse bias for driving element Q1 describes.If represent, then in the frame period, the load time when loading reverse bias for driving element Q1, be preferably more than 5% of frame period by more concrete numerical value.In addition, if be the more than 10% then more desirable of frame period.Its reason is as described below.
For example, image display device as mentioned above, generally scanned for 1 frame period with 60Hz, and the frame period is 1/60s=16.67ms.On the other hand, to carry out the mean value (average luminescence time in the frame period) of luminous time between above-mentioned light emission period be about 5ms to light-emitting component.This is equivalent to roughly 30% of the frame period.In the inhibition of driving element deterioration, if load time of reverse bias is set between light emission period (also promptly to driving element load positively biased during) about 1/10 (1ms) more than, just can access effect of sufficient.Also promptly, even 5% the reverse bias in frame period loads, also can access the deterioration preventing effect.Because more near fluorescent lifetime, just there is the degradation inhibiting effect load time of reverse bias more, if therefore the load time of reverse bias be more than 10% of frame period, just desirable more.In addition, if the load time of reverse bias more than the following 0.1ms of 1ms, also produce effect.
But, in the frame period, load reverse bias, retract the effect of the Vth drift of driving element in early days in the stage in addition.For example, in the current characteristics shown in Figure 13 with respect to the gate source voltage across poles of aSi-TFT, occurred the Vth drift along with accumulating of loading stress (stress) phenomenon of deterioration rapidly.Also promptly, the stage is revised the Vth drift in early days, has the effect that loading stress is accumulated.Therefore, with the fluorescent lifetime of light-emitting component in the time below about 10% (average luminescence time in the frame period) suitable, the frame period, also has the effect of revising the Vth drift, under the situation of this effect of expectation, for example can be made as about 5% (in the frame period about 50% of the average luminescence time) in frame period.
Different with above-mentioned idea, for example can when all light-emitting components are luminous, (not comprise when frame is all not luminous, when for example image display device does not use) yet, load reverse bias to driving element.Advantage in this case is, can concentrate and guarantee reliably to load the time of reverse bias.For example, load under the situation of reverse bias in the stipulated time in the frame period, need guarantee to load the free time of reverse bias, it is complicated that the structure of image element circuit becomes, and therefore is difficult to guarantee this free time.
On the other hand, when image display device does not use, load under the situation of reverse bias, such problem can not take place, on the contrary, because the load time that can guarantee reverse bias more, so can increase the correction effect that Vth drifts about.For example, the time that the load time that loads reverse bias to driving element can be made as more than the frame period loads.
In addition, for when all light-emitting components are not luminous (when for example image display device does not use) load the situation of reverse bias to driving element, from the viewpoint of consumed power, extremely prolonging the load time is not very wise move.Specifically, the time to driving element loading reverse bias, preferably be at least more than the time in frame period, and be below 20% of service time of device.In addition, the load time of reverse bias is also to have effect of sufficient in about 30～60 seconds.
In addition, so far being conceived to a light-emitting component in the image element circuit or the TFT that is connected with this light-emitting component is illustrated, but will load anti-bias voltage to a plurality of driving elements that constitute image element circuit, be made as about equally, can simplify the action control that loads reverse bias to each driving element thus all driving elements.In addition, the drift value homogenization of threshold voltage of driving element can also be between pixel, allowed, and the homogenization of picture element can be inferred.In addition, load to give the discrete scope between the pixel of anti-bias voltage of driving element, be preferably ± 0.5V in, more preferably ± 0.3V in, more preferably ± 0.1V in.
Below among the illustrated embodiment 1～3, be that the situation of N transistor npn npn describes all to driving element.
(embodiment 1)
Fig. 7 is in the image element circuit shown in the presentation graphs 1, to the time of lighting of the driving element Q1 under the situation of driving element Q1 loading reverse bias and the figure of the relation between the threshold voltage shift Δ V.Fig. 8 and Fig. 9 are the time of lighting of the driving element Q1 under the situation of representing to give the driving element Q1 loading reverse bias in the image element circuit shown in Fig. 1 and the figure of the relation between the threshold voltage shift.In addition, among Fig. 8 and Fig. 9,, do not light the situation of anti-bias voltage for " 1V " has been shown in the work that repeats, particularly Fig. 8 of 20 minutes time, the situation of anti-bias voltage for " 5V " has been shown among Fig. 9 with the 10 minutes time of lighting.
As shown in Figure 7, load in the absence of reverse bias, in about 60 hours continuous working, can observe the threshold voltage shift of about 0.8V.In addition, among Fig. 8 threshold voltage shift is reduced to about 0.45V, the effect that reverse bias loads occurred.In addition, can find out: discrete some increase of threshold voltage shift, and under near the voltage condition the zero offset, what have all can produce a little discrete tendencies.But the worst-case value of threshold voltage shift is about 0.54V, even-situation of the lower anti-bias voltage of 1V degree under, also have the effect that reduces threshold voltage shift.
In contrast, threshold voltage shift is discrete less among Fig. 9, and the size of self also gently reduces.Its later half practical work can be inferred, and the size according to the on-load voltage of reverse bias not only has the effect that prevents the threshold voltage deterioration, also has the effect that the deterioration that makes threshold voltage is recovered.In addition, compare and can learn with the result of embodiment 2 described later, with the side that the cycle that loads reverse bias shortens, its effect that deterioration of threshold voltage is recovered is better.
In addition, as the essential factor that suppresses threshold voltage shift by the loading reverse bias,, consider to have following 2 points for the situation of aSi-TFT.
1. become heat-labile state easily by the channel layer that a-Si:H constituted, but can stablize this non-steady state by loading reverse bias.
2. the gate insulating film that is made of SiN etc. the electric charge of catching can remove by loading reverse bias.
This wherein for the 1st point, can confirm to suppress by 230 ℃ annealing (anneal) phenomenon of threshold voltage shift.Can think that this phenomenon represents: the inhibition of threshold voltage shift is to make the result of in stable conditionization of thermally labile of channel layer.
(embodiment 2)
Figure 10 and Figure 11 are respectively expression and have figure with the characteristic of the same situation of Fig. 7 or Fig. 9.And the characteristic shown in Figure 10 shows following situation: promptly with the 3 minutes time of lighting, do not light 17 minutes time and carry out repetition, continue daytime to use 16 hours, do not light 8 hours nights, and when not the lighting of night, merely with the voltage open circuit of the gate-source drain electrode of driving element.In addition, following situation has been shown: promptly with the 3 minutes time of lighting among Figure 11, do not light 17 minutes time and carry out repetition, continue daytime to use 16 hours, do not light 8 hours nights, and during not the lighting of night, drain electrode-voltage between source electrodes is kept same current potential, give the reverse bias of voltage loading-5V between gate-to-source in when not lighting originally 1 hour simultaneously, and keep 0V at the other times band.
As shown in figure 10, merely under the situation with the voltage open circuit of the gate-source drain electrode of driving element, threshold voltage shift increases linearly, has observed the deterioration of threshold voltage when not the lighting of night.In addition, with situation that the situation about lighting continuously shown in Fig. 7 is compared under, discrete extreme increase that can learn threshold voltage shift.This can infer, in repeating the real world applications of lighting and not lighting, and the discrete increase of threshold voltage shift.
On the other hand, as shown in figure 11, in originally 1 hour when having only not the lighting of night, give under the situation of the reverse bias of voltage loadings-5V between gate-to-source, the increment rate of threshold voltage shift reduces, and dispersing of threshold voltage shift also reduces simultaneously.This can learn, even under long-time situation about using, and by loading the reverse bias of regulation in the down time after work, deterioration that can improvement threshold voltage.In addition, considerably less even the load time of reverse bias was compared with the working time in this case, also can access the effect of improving of regulation.
(embodiment 3)
Figure 12 for expression with the 3 minutes time of lighting, do not light 17 minutes time to repeat and move, and only give the figure of the characteristic under the situation of the reverse bias of loading-5V between gate-to-source in originally 5 minutes when not lighting.As shown in the drawing, though for following situation also can prevent threshold voltage through the time deterioration: in the middle of 17 minutes when not lighting, only loaded reverse bias at originally 5 minutes.
In addition, if the characteristic shown in Figure 12 is compared with the characteristic shown in Fig. 9, even then be equally-anti-bias voltage of 5V, Fig. 9 (Fig. 9: 20 minutes that the load time of reverse bias is long, Figure 12: 5 minutes) this side, threshold voltage shift discrete less.In addition, if the characteristic shown in Figure 11 is compared with the characteristic shown in Fig. 9, Fig. 9 of lacking of the continuous load time of reverse bias (Fig. 9: continuous 20 minutes, Figure 11: continuous 1 hour) side then, threshold voltage shift discrete less.In view of the above, in order to reduce the discrete of threshold voltage shift effectively, and consider the viewpoint of consumed power in the lump, the waveform that loads the anti-bias voltage of giving driving element is changed continuously.
For example, can make the voltage waveform of reverse bias that load to give driving element, be to be the attenuation sinusoidal wave at center with the assigned voltage that becomes reverse bias.In this case, the degree to the reverse bias of driving element is slowly relaxed, reduce consumed power, can reduce the discrete of the deterioration of driving element and driving element deterioration effectively.In addition, be made as suitable value, can also intermittently carry out the loading of reverse bias by the assigned voltage that will become reverse bias, sinusoidal wave amplitude.
In addition, for example can also make the voltage waveform of reverse bias that load to give driving element, be to be the square wave at center with the assigned voltage that becomes reverse bias.In this case, also can access identical effect under the situation with above-mentioned attenuation sinusoidal wave.In addition, except attenuation sinusoidal wave, square wave, can also be the cycle of maintenances such as sine wave, triangular wave regulation and the waveform that changes.
But, in the above-mentioned explanation, be not particularly related to the upper limit (absolute value) that loads the anti-bias voltage of giving driving element.Therefore below the upper limit (absolute value) that loads the anti-bias voltage of giving driving element is described.As the absolute value upper limit of this anti-bias voltage, for example can be set as following such value:, make that the electric field intensity that is produced between the loading electrode of this driving element is below the 1MV/cm promptly by load giving the reverse bias of driving element.By the electric field intensity of this 1MV/cm, for example the thickness at gate insulating film is about
The situation of common aSi-TFT under, load approximately-reverse bias of 40V for this dielectric film.If common aSi-TFT, loading-voltage condition more than the 40V under, dielectric film might destroy.Therefore, be set at below the 1MV/cm, and can avoid usually the hazardous location of the aSi-TFT that uses as the TFT of image display device by the electric field intensity that will between the loading electrode of this driving element, be produced because reverse bias that load to give driving element.
In addition, for example, the electric field intensity that is produced because of loading the reverse bias of giving driving element can also be set at the following value of 0.1MV/cm between the loading electrode of this driving element.In this case, for other TFT beyond the above-mentioned aSi-TFT, also can be and widespread use as the value of the usable range of reality.
(embodiment 4)
Figure 17 is the circuit diagram of the image element circuit that constitutes the related image display device of embodiments of the present invention 1, and the image display device of present embodiment 4 has the image element circuit shown in this figure is arranged in rectangular formation.In addition, image element circuit shown in this Fig has the formation that has following device: organic illuminating element D1; The luminous driving transistors Q1 of control organic illuminating element D1; Capacity cell Cs, it has the 1st electrode and the 2nd electrode, and the 1st electrode is connected with the grid of driving transistors Q1; And switching transistor Qth, short circuit is carried out in its grid and drain electrode to driving transistors Q1 selectively.In addition, image element circuit shown in this Fig has: the power lead VP that is connected with the anode-side of organic illuminating element D1; The power lead VN that is connected with the source side of driving transistors Q1; The sweep trace S that the driving of switching transistor Qth is controlled; And be connected with the 2nd electrode of capacity cell Cs and image element circuit supplied with the image signal line VD of picture signal.In these wirings, power lead VP, power lead VN, sweep trace S, for common connection of image element circuit that is arranged on the line direction, and image signal line VD is for common connection of image element circuit that is arranged on the column direction.
Figure 18 is the sequential chart of the change of the potential change of power lead VP, power lead VN, sweep trace S, image signal line VD of the related image display device of the present embodiment 4 in when action expression and driving transistors Vgs.
(the 1st reset operation)
At first, carry out the 1st operation that resets, the described the 1st resets, and current potential that operation loads when luminous in the past to the grid of driving transistors Q1 resets.Specifically, be respectively as shown in figure 18: the current potential of power lead VP, VN remains V
DD, image signal line VD remains 0 current potential, and sweep trace S remains current potential (the conducting current potential: VgH) of high level.By this, because the source side of driving transistors Q1 and the current potential of drain side become about equally, therefore become cut-off state in fact.In addition, because switching transistor Qth becomes conducting state, so the grid potential of driving transistors Q1 becomes V
DD-V
OLEDTherefore, the Vgs of driving transistors Q1 becomes-V
OLEDIn addition, owing to the electric charge that is accumulated among the organic illuminating element D1 slowly reduces, so the result is
(wherein, V
OLED＜0), also is
(and Vgs＜0).
(preparatory process)
Next, in preparatory process, being respectively: power lead VP remains-and (Vp＜Vth), image signal line remains V to Vp
DH, sweep trace S remains stopping potential (VgL).In addition, the potential change of power lead VN is V
DD→ 0V.As a result, the grid potential of driving transistors Q1 becomes V
DD+ V
DHOn the other hand, because power lead VN change is V
DD→ 0V, therefore, the Vgs of driving transistors Q1 becomes V
DH→ V
DD+ V
DH
(threshold voltage detection operation)
Next, be respectively: power lead VP, VN remain 0V, and sweep trace S remains and connects current potential (VgH), and image signal line remains V
DHConsequently, switching transistor becomes the ON state, from the grid of driving transistors Q1 through drain electrode to the source electrode circulating current.The Vgs that this electric current is passed to driving transistors Q1 always becomes Vth in fact, finally makes the grid potential of driving transistors Q1 become Vth.Therefore, the Vgs of driving transistors Q1 becomes Vth.
(reverse bias loading operation)
Next, reverse bias is loaded to driving transistors Q1.Specifically, be respectively: power lead VP, VN remain 0V, and sweep trace S remains stopping potential (VgL), and image signal line remains 0V.Accumulating among the capacity cell Cs has bigger electric charge, and corresponding to the potential change of image signal line, the grid potential of driving transistors Q1 is changed to V
Th+ V
DATA-V
DH, Vgs becomes V
Th+ V
DATA-V
DH
(writing operation)
Next, remain respectively at power lead VP, VN under the state of 0V, be set as in the moment of conducting current potential (VgH) image signal line V at sweep trace S
DBe set as V
DATA(0≤V
DATA≤ V
DH), and write VD
ATAHere, if the capacity of organic illuminating element D1 is made as C
OLED, then the grid potential of driving transistors Q1 just becomes α (V
DH-V
DATA)+Vth.In addition, α=C
OLED/ (Cs+C
OLED).On the other hand, because power lead VN=0, so the Vgs of driving transistors Q1 becomes α (V
DH-V
DATA)+Vth.
(the 2nd reset operation)
Next, be used for the 2nd operation that resets that the electric charge of being accumulated among the organic illuminating element D1 is resetted.Specifically, be respectively: power lead VP remains-Vp, and sweep trace S remains stopping potential (VgL), and image signal line remains V
DHIn addition, power lead VN carries out potential change in the mode of-Vp → 0.When power lead VN=-Vp, the source side of driving transistors Q1 and the current potential of drain side about equally, thereby become cut-off state in fact.Therefore, the grid potential of driving transistors Q1 becomes α (V
DH-V
DATA)+Vth, Vgs become α (V
DH-V
DATA)+Vth+Vp → α (V
DH-V
DATA)+Vth.
(luminous operation)
Next, be respectively: power lead VP remains V
DD, VN remains 0V, and sweep trace S remains stopping potential (VgL), and image signal line remains V
DHConsequently, circulating current Id=(β/2) [(1-α) (V among the source electrode light-emitting component D1
DH-V
DATA)]
2, organic illuminating element D1 carries out luminous.
(reverse bias loading operation)
Afterwards, reverse bias is loaded to driving transistors Q1.Specifically, be respectively: power lead VP, VN remain V
DD, sweep trace S remains stopping potential (VgL), and image signal line remains 0V.Consequently, the grid potential of driving transistors Q1 becomes V
Th+ α (V
DH-V
DATA)-V
DH, Vgs is V
Th+ α (V
DH-V
DATA)-V
DD-V
DH
Afterwards, by repeating above-mentioned each operation, in each frame, carry out loading the driving of reverse bias in turn to driving transistors Q1.In addition, in each frame, loading under the situation of reverse bias, reverse bias (Vgs) is preferably-3V～-10V.
(other embodiments (1))
Fig. 4 is the figure of the configuration example of the expression image element circuit different with Fig. 1 involved in the present invention.Image element circuit shown in Fig. 4 except light-emitting component D2 is connected with the source side of driving element Q2 this point, is and the identical or equal formation of the image display device shown in Fig. 1.In addition, the image display device shown in Fig. 4 is the formation of " voltage-controlled type " of the gate terminal of control driving component Q2, and this point is identical with Fig. 1, is called " grid control/source drive ".
The feature of the image element circuit shown in Fig. 4 is compared with the image element circuit of Fig. 1, has this shortcoming that writes the voltage rising, but has comparatively slow this advantage of discrete progress of the deterioration between pixel.But, the same with the image element circuit of Fig. 1, can't avoid because of the caused deterioration rapidly of the Vth of driving element drift, and because of the problem of the discrete caused image homogeneity deterioration of deterioration.Therefore,, also can use above-mentioned technology, obtain the effect identical with the image element circuit of Fig. 1 for the image element circuit shown in Fig. 4.In addition, as controller U2, constitute by the control line of capacity cell such as single or multiple TFT, capacitor and control TFT etc.
(other embodiments (2))
Fig. 5 is the figure of the configuration example of the expression image element circuit different with Fig. 1, Fig. 4 involved in the present invention.In the image element circuit shown in Fig. 5, the light-emitting component D3 this point that is connected with the source side of driving element Q3a is identical with Fig. 4, but difference is, the gate terminal ground connection of driving element Q3a, and the distolateral electric current of source electrode of driving element Q3a is controlled by controller U3 simultaneously.In addition, on-off element Q3b is when being used between the gate-to-source that writes driving element Q3a voltage, disconnects the on-off element of driving element Q3a and light-emitting component D3.In addition, the image display device shown in Fig. 5 is the formation of " current-control type " of the source terminal of control driving component Q3a, is called " source electrode control/source drive " especially.In addition, as controller U3, constitute by the control line of capacity cell such as single or multiple TFT, capacitor and control TFT, power lead etc.
Image element circuit shown in Fig. 5, the same with the image element circuit of Fig. 1, Fig. 4, can't avoid Vth because of the driving element caused deterioration of drifting about, and because of the problem of the discrete caused image homogeneity deterioration of deterioration.Therefore,, also can use above-mentioned technology, obtain the effect identical with the image element circuit of Fig. 1, Fig. 4 for the image element circuit shown in Fig. 5.
(other embodiments (3))
Fig. 6 is the figure of the configuration example of the expression image element circuit different with Fig. 1, Fig. 4 and Fig. 5 involved in the present invention.In the image element circuit shown in Fig. 6, the light-emitting component D4 this point that is connected with the drain side of driving element Q4 is identical with Fig. 1, but difference is that the gate terminal ground connection of driving element Q4 and the distolateral electric current of the source electrode of driving element Q4 are controlled by controller U4.In addition, the image display device shown in Fig. 6 is the formation of " current-control type " of the source terminal of control driving component Q4, is called " source electrode control/drain drives " especially.In addition, constitute by the control line of the capacity cell of single or multiple TFT, capacitor and so on and control TFT, power lead etc. as controller U4.
Image element circuit shown in Figure 6, the same with the image element circuit of Fig. 1～Fig. 3, can't avoid Vth because of the driving element caused deterioration of drifting about, and because of the problem of the discrete caused image homogeneity deterioration of deterioration.Therefore,, also can use above-mentioned technology, obtain the effect identical with the image element circuit of Fig. 1～Fig. 3 for the image element circuit shown in Fig. 6.
The driving method of＜e-machine 〉
Next the driving method to e-machine with above-mentioned image display device describes.Here, just with to per frame period load the different driving method of method of reverse bias, describe to driving element.In addition, said here e-machine comprises mobile phone, personal computer, digital camera (digital camera), automobile navigation apparatus, PDA, POS terminal certainly, measures machine and duplicating machine etc.
(example 1): the power supply of image display device loads the situation (with reference to Figure 14) of reverse bias when ON becomes OFF to driving element.
(1) at first, image display device becomes duty, carries out image and shows (step S101).
(2) next, to the information of image display device input power supply OFF, image display device becomes power supply OFF pattern (step S102).Power supply OFF pattern is meant the information of having imported power supply OFF, and does not in fact become the state of power supply OFF.
(3) here, be under the state of power supply OFF pattern at image display device, the driving element input reverse bias load information to image display device loads reverse bias (step S103) by controller to driving element.
(4) afterwards, finish the loading at the reverse bias of driving element, the power supply of image display device becomes OFF, becomes idle state (step S104).
Like this, if be used for power supply with image display device be made as OFF during in load reverse bias to driving element, even then under the situation that loads reverse bias, the user of e-machine can be not yet use e-machine unusually with feeling.
(example 2): the state that from the power supply of image display device is OFF loads the situation (with reference to Figure 15) of reverse bias to carrying out during image shows this to driving element.
(1) at first, image display device is in off position, and the power supply of image display device becomes OFF (step S201).When power supply is OFF, be the state that power lead that is electrically connected with light-emitting component is not provided voltage.
(2) next, to the information of image display device input power source ON, image display device becomes power source ON pattern (step S202).So-called power source ON pattern is meant the information of having imported power source ON, and does not in fact carry out the state that image shows in image display device.
(3) here, be under the state of power source ON pattern at image display device, the driving element input reverse bias load information to image display device loads reverse bias (step S203) by controller to driving element.
(4) afterwards, finish the loading to the reverse bias of driving element, the image that carries out image display device shows (step S204).
Like this, if be used for power supply with image display device be made as ON during in load reverse bias to driving element, even then under the situation that loads reverse bias, the user of e-machine can be not yet use e-machine unusually with feeling.
(example 3): the power supply at image display device is ON, but display frame be holding state during in, load the situation (with reference to Figure 16) of anti-bias voltage to driving element.
(1) at first, image display device is in running order, carries out the demonstration (step S301) of the 1st image by image display device.
(2) next, the display frame of image display device becomes holding state (step S302).Here, so-called holding state is meant: for example do not carry out the situation that image shows in display frame; Started the situation of screen protection; Though in display frame, carried out the image demonstration, situation about showing with the brightness that is lower than the 1st image; Though and in display frame, carried out the image demonstration, but (for example be in situation about can't recognize from the outside under the state (state that image is hidden) of this image, in Collapsible mobile telephone, by basket being folded the situation that makes that picture is covered by basket) etc.
(3) here, the driving element input reverse bias load information to image display device loads reverse bias (step S303) by controller to driving element.
(4) afterwards, finish to load, remove the holding state (step S304) of display frame and in image display device, carry out picture demonstration (step S305) at the reverse bias of driving element.In addition, even the loading of reverse bias finishes, display frame also can be in holding state.
Like this, if the display frame of image display device be in holding state during driving element is loaded reverse bias, even then under the situation that loads reverse bias, the user of e-machine can not have to use e-machine under the situation about feeling unusually yet.
In addition, the present invention is not limited in above-mentioned embodiment, can also carry out various improvement, change within the scope of the invention.
Claims (17)
1. an image display device is characterized in that,
Have:
Carry out luminous light-emitting component by means of energising; And
Be connected with described light-emitting component, this light-emitting component carried out the driving element of light emitting control,
When described light-emitting component not luminous, described driving element is loaded anti-bias voltage; This anti-bias voltage is to be lower than this transistorized threshold voltage under the situation of n transistor npn npn at described driving element, at described driving element is to be higher than this transistorized threshold voltage under the situation of p transistor npn npn.
2. image display device as claimed in claim 1 is characterized in that,
Described driving element is loaded described anti-bias voltage in each frame period.
3. image display device as claimed in claim 2 is characterized in that,
Load the described anti-bias voltage of giving described driving element, in each frame period, load more than the 1msec at least.
4. as claim 2 or 3 described image display devices, it is characterized in that,
Described driving element is loaded time of described anti-bias voltage, be more than 5% of frame period.
5. as claim 2 or 3 described image display devices, it is characterized in that,
Described driving element is loaded time of described anti-bias voltage, is more than 50% of average luminescence time, the mean value of the fluorescent lifetime in each frame period that the described average luminescence time is described light-emitting component.
6. image display device as claimed in claim 1 is characterized in that,
Have the pixel of described light-emitting component and described driving element, arrange a plurality ofly,
When all described light-emitting components are not luminous, described driving element is loaded described anti-bias voltage.
7. image display device as claimed in claim 1 is characterized in that,
The device do not use the time, described driving element is loaded described anti-bias voltage.
8. as each described image display device in the claim 1,2,6 or 7, it is characterized in that:
The absolute value that loads the described anti-bias voltage of giving described driving element is more than the 1V.
9. as claim 6 or 7 described image display devices, it is characterized in that,
Described driving element is loaded time of described anti-bias voltage, be at least more than the time in frame period.
10. as claim 6 or 7 described image display devices, it is characterized in that,
Described driving element is loaded time of described anti-bias voltage, be below 20% of service time of image display device.
11. image display device as claimed in claim 1 is characterized in that,
Loading the waveform of the described anti-bias voltage of giving described driving element, is the waveform with specified period.
12. image display device as claimed in claim 11 is characterized in that,
Loading the waveform of the described anti-bias voltage of giving described driving element, is decaying wave.
13. image display device as claimed in claim 1 is characterized in that:
The electric field intensity that is produced between the loading electrode of this driving element because of described anti-bias voltage that load to give described driving element is below 1MV/cm.
14. image display device as claimed in claim 1 is characterized in that:
Have the pixel of described light-emitting component and described driving element, arrange a plurality ofly;
Load the described anti-bias voltage of giving described driving element, for all driving elements, equate.
15. an image display device is characterized in that having:
Carry out luminous light-emitting component by means of energising;
Be connected with described light-emitting component, drive the driving element of this light-emitting component; And
When described light-emitting component not luminous, described driving element is loaded the control gear of anti-bias voltage; This anti-bias voltage is to be lower than this transistorized threshold voltage under the situation of n transistor npn npn at described driving element, at described driving element is to be higher than this transistorized threshold voltage under the situation of p transistor npn npn.
16. the driving method of an image display device, be a kind of have carry out luminous light-emitting component by means of energising, and be connected with described light-emitting component and this light-emitting component carried out the driving method of image display device of the driving element of light emitting control, it is characterized in that
Comprise:
Allow the luminous step of described light-emitting component; And
When described light-emitting component not luminous, described driving element is loaded the step of anti-bias voltage;
Described anti-bias voltage is to be lower than this transistorized threshold voltage under the situation of n transistor npn npn at described driving element, at described driving element is to be higher than this transistorized threshold voltage under the situation of p transistor npn npn.
17. the driving method of image display device as claimed in claim 16 is characterized in that,
Load the described anti-bias voltage of giving described driving element, in each frame period, be loaded.
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| PCT/JP2005/023967 WO2006070833A1 (en) | 2004-12-27 | 2005-12-27 | Image display and its driving method, and driving method of electronic apparatus |
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| KR20240172262A (en) * | 2018-05-18 | 2024-12-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Display device, and drive method for display device |
| CN110956922B (en) * | 2019-12-19 | 2022-05-13 | 业成科技（成都）有限公司 | Display panel and driving method |
| CN113707079B (en) * | 2021-09-09 | 2023-03-28 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and display panel |
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| CN 1388504 A,说明书第6页第25行-第26行,第16页第28行-第31行,第17页第29行-第32行. |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101515433A (en) | 2009-08-26 |
| CN101069226A (en) | 2007-11-07 |
| CN101515433B (en) | 2011-04-13 |
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