CN101059650A - Pattern transfer printing device, stamping device and pattern transfer printing method - Google Patents

Abstract

A pattern transfer method for transferring an imprinting pattern formed on a mold provided with an alignment mark onto a substrate provided with an alignment mark or a resin material interposed between the substrate and the mold includes a first step for obtaining a first image by disposing the alignment mark provided to the mold and an alignment mark provided to a reference substrate at a first object position and observing the alignment marks through a first image pickup portion, a second step for obtaining a second image by disposing the alignment mark provided to the reference substrate at a second object position spaced apart from the first object position and observing the alignment mark through a second image pickup portion, and a third step for obtaining information about a difference in image position between the alignment marks by using the first and second images.

Description

Pattern transfer equipment, Embosser and pattern transfer-printing method

Technical field

The present invention relates to pattern transfer equipment, Embosser and pattern transfer-printing method.Specifically, the present invention relates to the shape transferred thereon of die to pending parts, thus the equipment and the method for realization processing.

Background technology

In recent years, as Stephan Y.Chou etc. at Appl.Phys.Lett., Vol.67, Issue 21, described in the pp.3114-3116 (1995), developed microtexture that a kind of handle go up to form at die (mold) and be transferred to retrofit technology on the workpiece such as semiconductor, glass, resin or metal (or workpiece) by pressure, and this technology receives publicity.This technology is called nano impression or nano concavo-convex impression, because it has approximately several nano level resolving powers.Except semiconductor is made, processing when this technology can realize the three-dimensional structure of wafer scale.For this reason, as the optical device such as photonic crystal, the manufacturing technology of μ-TAS (micro-total analysis system), biochip etc. etc., this technology is suitable for various fields by expection.

The following describes and in semiconductor is made, use this nano impression, for example situation of optical pressure impression method.

At first, go up the photocurable resin material of formation one deck at substrate (for example, semiconductor wafer).Subsequently, the die that is formed with required imprinted pattern on it is pressed on the resin bed, afterwards with the ultraviolet ray irradiation, to solidify photocurable resin material.Thereby stamping structure is transferred on the resin bed.Subsequently, realize with resin bed as the etching of mask etc., thereby stamping structure is transferred on the substrate.

Incidentally, in semiconductor is made, must realize that die aims at (position) of substrate.For example, (process rule) is not more than under the situation of 100 nanometers at present manufacture of semiconductor, reaches owing to the tolerance of the alignment error of equipment and it is generally acknowledged and be the strict degree of several nanometers to tens nanometers.

As such alignment methods, U.S. Patent No. 6696220 proposes a kind of method, wherein inserting under the state of resinite material between die and the substrate, die and substrate is in contact with one another, thereby realizes aiming at.In this method, at first, photocurable resin material is coated onto on a part of substrate the mark on being set to substrate selectively.Subsequently, die is moved to the position relative with die.In this state, reduce the distance between die and the workpiece (substrate), guarantee that mark is not filled the distance of resin material so that die is close to photocurable materials.In the method, realize in this state aiming at, carry out final exerting pressure afterwards.In the method, optical system adopts and only observes near the observational technique that has the part of the less depth of focus mark of die.

As be in the method for aiming at these two objects under the released state at two objects to be aimed at, the method as two image pick-up devices of use of describing among Japanese Patent Application Publication (JP-A) the Hei 10-335241 has been proposed.

In this method, when realizing surveying as the mask of first object with as the relative position of the wafer of second object, unify side at illumination optical system the 3rd object is set, on right two surfaces with being arranged on position sensing index face on first and second objects of the 3rd object, provide two independently with reference to alignment mark respectively to described the 3rd object.In this method, the optical imagery of the position sensing mark on the reference alignment mark on the 3rd object and first and second object is surveyed by image pick-up device, thereby surveys the position deviation between first object and second object.

With regard to aiming at of die and substrate, in realization face under die and the direct or indirect state of contact of substrate direction on time, these dies and substrate can affect adversely.

For example, in the method that under the state of describing as U.S. Patent No. 6696220 that has only die and substrate to be in contact with one another, realizes aiming at by resin material, producing between die and the substrate under the situation of big position deviation, when with mobile significantly die of high speed and substrate, the damaged possibility of die and substrate is further increased.On the other hand, if can realize aiming under die and state that substrate separates, die and substrate can be not destroyed so, thereby further are reduced in the degree of the position deviation between the die and substrate after the die contact pressure resin material.Thereby, can realize aiming at a high speed.

When under such released state, realizing on time, in the method described in JP-A Hei 10-335241, lamp optical system complexity, and the 3rd object that need on two surface, have patterns of high precision.

Summary of the invention

In view of the above problems, fundamental purpose of the present invention provides a kind of Embosser of the pattern transfer equipment of can realization of High Speed aiming at.

Another object of the present invention provides a kind of pattern transfer-printing method that can realize that high speed is aimed at.

According to an aspect of the present invention, provide a kind of handle to be transferred on the substrate that possesses alignment mark possessing the imprinted pattern that forms on the die of alignment mark, perhaps be transferred to the pattern transfer equipment on the resin material that places between substrate and the die, described pattern transfer equipment comprises

Obtain first image pick-up device of image at first object space; With

Obtain second image pick-up device of image at second object space that separates with first object space,

The alignment mark of the alignment mark of die and substrate wherein, perhaps the alignment mark of reference substrate can be placed on first object space, and the alignment mark of substrate or the alignment mark of reference substrate can be placed on second object space,

Wherein observe the alignment mark be placed on first and second object spaces by first and second image pick-up devices, thus obtain with by the relevant information of the difference of aspect, picture position between the alignment mark of first and second image pick-up devices observation and

Wherein according to the aligning between die and the substrate on the direction in the information realization face that obtains, thereby imprinted pattern is transferred on substrate or the resin material.

In pattern transfer equipment according to the present invention, preferably by relatively at the image of the reference substrate of first object space and image at the reference substrate of second object space, obtain the information relevant with the difference of aspect, picture position.In addition, the distance between first object space and second object space preferably is equal to or greater than substrate and is formed at the distance that the imprinted pattern on the die is in contact with one another indirectly by resin material.In a preferred embodiment, reference substrate possesses at it faces the lip-deep alignment mark of die in the face of the lip-deep alignment mark of substrate with at it, and thickness equals the distance between first object space and second object space.The alignment mark that offers reference substrate preferably is disposed in the measure-alike zone of pattern area of size and die.Reference substrate preferably constitutes by being transferred the substrate itself that is formed at the imprinted pattern on the die.In pattern transfer equipment of the present invention, preferably pass through at second object space along the aligning between direction realization die and the substrate in the face, and the die of aligning and substrate directly are in contact with one another, perhaps be in contact with one another indirectly by resin material, imprinted pattern can be transferred on substrate or the resin material.Pattern transfer equipment preferably also comprises the light intensity adjusting mechanism of the amount of adjusting the light that enters first and second image pick-up devices.Light intensity adjusting mechanism preferably is so constructed, and makes that in a plurality of zones of first and second image pick-up devices, the amount of light all is adjustable.

According to a further aspect in the invention, provide a kind of handle to be transferred on the substrate that possesses alignment mark possessing the imprinted pattern that forms on the die of alignment mark, perhaps be transferred to the pattern transfer-printing method on the resin material that places between substrate and the die.Described pattern transfer-printing method comprises by alignment mark that offers die and the alignment mark that offers reference substrate are arranged in first object space, and by first image pick-up device observation alignment mark, obtain the first step of first image, by the alignment mark that offers reference substrate is arranged in second object space that separates with first object space, and by second image pick-up device observation alignment mark, obtain second step of second image, with by using first and second images, obtain and alignment mark between the third step of the relevant information of the difference of aspect, picture position.In pattern transfer-printing method of the present invention, in first step, preferably realize the aligning between die and the reference substrate.In addition, between the first step and second step, preferably keep reference substrate position on the direction in its face.In third step, preferably, obtain the information relevant with the difference of aspect, picture position by comparing second image and the alignment mark that is arranged in the reference substrate of second object space.In pattern transfer-printing method of the present invention, the alignment mark that offers reference substrate preferably is disposed in the measure-alike zone of pattern area of size and die.In addition, reference substrate preferably constitutes by being transferred the substrate itself that is formed at the imprinted pattern on the die.Pattern transfer-printing method preferably also is included in after the third step, by die and substrate directly are in contact with one another, perhaps be in contact with one another indirectly by resin material, thereby realize aligning between die and substrate at first object space, imprinted pattern is transferred to the 4th step on substrate or the resin material.When by die and substrate directly are in contact with one another, perhaps be in contact with one another indirectly by resin material, when being transferred to imprinted pattern on substrate or the resin material, be preferably in when reducing distance between die and substrate or the resin material from second object space that separates with first object space, realize the aligning between die and substrate, thereby realize the transfer printing of imprinted pattern.In addition, when passing through to use first and second images, obtain with alignment mark between the relevant information of the difference of aspect, picture position the time, third step preferably includes from first and second image pick-up section and divides the process of selecting a plurality of zones first and second images that obtain, realize the process of first signal Processing in described a plurality of zones each and realize the process that secondary signal is handled according to the result of first signal Processing.In addition, when passing through to use first and second images, obtain with alignment mark between the relevant information of the difference of aspect, picture position the time, third step preferably includes wherein has the grating of different spacing as alignment mark by use, the data that divide to be obtained by first and second image pick-up section are superimposed and carry out signal Processing, thereby generation Moire fringe, and the process of the Moire fringe of utilization generation.The above-mentioned light intensity adjusting mechanism of pattern transfer equipment preferably is used in the pattern transfer-printing method of the present invention, so that partly realize the light quantity adjusting at first and second image pickups.In addition, light intensity adjusting mechanism preferably is used to realize the light quantity adjusting in a plurality of zones of first and second image pickups part.In pattern transfer-printing method of the present invention, first step preferably includes by under first light quantity, partly observe alignment mark via first image pickup, obtain the process of first image, second step preferably includes by under second light quantity, partly observe alignment mark via second image pickup, obtain the process of second image.In addition, realize in each in described a plurality of zones in third step preferably, carrying out the correction of magnification before the process of first signal Processing according to the height change of die or substrate.

According to a further aspect in the invention, provide a kind of handle be formed at imprinted pattern on the die be transferred to substrate or place substrate and die between resin material on pattern transfer equipment.Described pattern transfer equipment preferably includes the first image pickup part that obtains image in first depth of focus; with the second image pickup part that obtains image in second depth of focus; first alignment mark that wherein offers die is placed within first depth of focus with second alignment mark that offers substrate; and partly observe by first image pickup; thereby obtain first image; the 3rd alignment mark that wherein offers die or substrate is placed within second depth of focus; and partly observe by second image pickup; thereby obtain second image; wherein by utilizing first and second images, obtain with first and second image pick-up section branch between the relevant information of difference of range of observation aspect.

According to a further aspect in the invention, provide a kind of aligning substrate that possesses alignment mark and the aligning equipment that possesses the disk-like object of alignment mark.Described aligning equipment preferably includes first image pick-up device that obtains image at first object space; With second image pick-up device that obtains image at second object space that separates with first object space, wherein the alignment mark of the alignment mark of the alignment mark of disk-like object and substrate or reference substrate can be placed in first object space, the alignment mark of substrate or reference substrate can be placed in second object space, wherein observe the alignment mark that places first and second object spaces by first and second image pick-up devices, thereby the relevant information of difference of aspect, picture position between the alignment mark that obtains and observe by first and second image pick-up device is wherein according to the aligning between disk-like object and the substrate on the direction in the information realization face that obtains.

According to a further aspect in the invention, provide a kind of aligning substrate that possesses alignment mark and the alignment methods that possesses the disk-like object of alignment mark.Described alignment methods preferably includes: the alignment mark that offers disk-like object by handle places first object space with the alignment mark that offers reference substrate, and partly observes alignment mark by first image pickup, obtains the first step of first image; The alignment mark that offers reference substrate by handle places second object space that separates with first object space, and partly observes this alignment mark by second image pickup, obtains second step of second image; With by using first and second images, obtain with alignment mark between the third step of the relevant information of the difference of aspect, picture position.

According to a further aspect in the invention, aligning between a kind of second parts of realizing possessing first parts of first alignment mark and possessing second alignment mark is provided, between two parts that especially are arranged opposite to each other with respect to the alignment methods of the aligning of direction in the face.In this alignment methods, at first, prepare to be used to observe first image pickup part of the object that is positioned at first object space and the second image pickup part of observing the object that is positioned at second object space that separates with first object space.Subsequently, obtain with first image pickup part and second image pick-up section branch between the relevant information of difference of range of observation aspect.Described information can be for example with the center of the observation place that will partly observe by first and second image pickups respectively between the relevant information of mutual departure degree.Then, in the described information of use, realize the aligning between first parts and second parts under the state that is arranged to partly to observe by first image pickup part and second image pickup respectively when second alignment mark at first alignment mark of first parts and second parts.Thereby, can under these two parts state spaced apart a predetermined distance, realize aiming in the strict face between these two parts.After under the state that second alignment mark of first alignment mark of first parts and second parts is arranged to partly to be observed by first image pickup part and second image pickup respectively, realizing aligning in addition, can also reduce the distance between first parts and second parts.In addition, these two parts are in contact with one another.Alignment methods recited above is not only applicable to Embosser, and is applicable to the various device that requires position alignment.

In conjunction with the accompanying drawings, following explanation according to a preferred embodiment of the invention, it is more obvious that these and other purposes, features and advantages of the present invention will become.

Description of drawings

Fig. 1 (a)-1 (d) aims at the synoptic diagram of the method for die and substrate by reference substrate in the graphic extension embodiments of the invention 1, wherein Fig. 1 (a) comprises and is illustrated in the figure that reference substrate is placed in the situation of observing under the state of first object space, Fig. 1 (b) comprises and is illustrated in the figure that reference substrate is placed in the situation of observing under the state of second object space, Fig. 1 (c) comprises and is illustrated in the figure that substrate is placed in the situation of observing under the state of second object space, and Fig. 1 (d) comprises and is illustrated in the figure that substrate is placed in the situation of observing under the state of first object space.

Fig. 2 (a)-2 (c) is the synoptic diagram of the structure of the reference substrate among the graphic extension embodiment 1.

Fig. 3 is the synoptic diagram of the optical measuring system among the graphic extension embodiment 1.

Fig. 4 is the synoptic diagram of the treatment facility among the graphic extension embodiment 1.

Fig. 5 (a)-5 (c) aims at the synoptic diagram of the method for die and substrate by reference substrate in the graphic extension embodiments of the invention 2, wherein Fig. 5 (a) comprises and is illustrated in the figure that reference substrate is placed in the situation of observing under the state in precalculated position, Fig. 5 (b) comprises and is illustrated in the figure that substrate is placed in the situation of observing under the state of second object space, and Fig. 5 (c) comprises and is illustrated in the figure that substrate is placed in the situation of observing under the state of first object space.

Fig. 6 (a)-6 (d) is the synoptic diagram of the signal processing method in the graphic extension embodiments of the invention 3, wherein Fig. 6 (a) comprises and is illustrated in the figure that reference substrate is placed in the situation of observing under the state of first object space, Fig. 6 (b) comprises and is illustrated in the figure that reference substrate is placed in the situation of observing under the state of second object space, Fig. 6 (c) comprises and is illustrated in the figure that substrate is placed in the situation of observing under the state of second object space, and Fig. 6 (d) comprises and is illustrated in the figure that substrate is placed in the situation of observing under the state of first object space.

Fig. 7 (a)-7 (f) is the synoptic diagram of the alignment mark among the graphic extension embodiment 3, wherein Fig. 7 (a) is the figure that graphic extension is used for first alignment mark of single shaft measurement, Fig. 7 (b) is the figure that graphic extension is used for second alignment mark of single shaft measurement, Fig. 7 (c) is the figure that graphic extension is used for the composograph of single shaft measurement, Fig. 7 (d) is that graphic extension is used for first alignment mark that XY θ measures, Fig. 7 (e) is that graphic extension is used for second alignment mark that XY θ measures, and Fig. 7 (f) is that graphic extension is used for the composograph that XY θ measures.

Fig. 8 (a) and 8 (b) are the synoptic diagram of the optical measuring system in the graphic extension embodiments of the invention 4, the figure of Fig. 8 (a) structure that to be the graphic extension light that wherein enters image pick-up device regulated by optical device wherein, Fig. 8 (b) are the figure of the light of graphic extension each position of wherein the arriving image pick-up device structure of being regulated by optical device.

Fig. 9 (a) and 9 (b) are the optical measuring system synoptic diagram in the graphic extension embodiments of the invention 4, wherein Fig. 9 (a) is the wherein figure of the light structure of being regulated by fader control equipment of graphic extension, and Fig. 9 (b) is the wherein figure of the light structure of being regulated by rotary shutter of graphic extension.

Figure 10 (a)-10 (d) is the synoptic diagram of the mark of use among the graphic extension embodiment 4, wherein Figure 10 (a) represents the die mark, Figure 10 (b) represents base plate mark, the die mark that Figure 10 (c) expression has periodic structure, the base plate mark that Figure 10 (d) expression has periodic structure.

Figure 11 (a) and 11 (b) are the process flow diagrams of the signal processing method among the graphic extension embodiment 4, wherein Figure 11 (a) is the process flow diagram that graphic extension does not realize the situation of magnification correction, and Figure 11 (b) is the process flow diagram that graphic extension realizes the situation of magnification correction.

Figure 12 and 13 is that expression enters the wavelength of image pickup light partly and the figure of the relation between the intensity.

Embodiment

By structure recited above, can realize purpose of the present invention.This is to think to realize novel pattern transfer, by present inventor's research, find obtain with each image pick-up device (perhaps image pickup part) between in the structure of observing the relevant information of difference aspect the image for basic.More particularly, by adopting during nano impression, utilize reference substrate, the structure that die and substrate position are aimed at mutually can realize the aligning between die and the substrate more at an easy rate.The use of structure of the present invention is not limited to imprinted pattern and is transferred to originally on one's body situation of substrate, and is applicable to the situation that realizes pattern transfer by the resin material between die and substrate.

In one embodiment of the invention, in order to realize treatment facility, can adopt following structure by above-mentioned pattern transfer.

More particularly, can adopt a kind of structure, wherein use a kind of observation on the treatment surface of die first object space and than the optical system of second object space of the more approaching parts to be processed of described treatment surface, and, realize the aligning between die and the parts to be processed by using identification to observe first image pick-up device of first object space and observing the device of the relativeness (perhaps difference) of the observation place between second image pick-up device of second object space.In this case, can adopt reference substrate wherein to be used as the structure of the device of the difference of discerning the aspect, observation place.In addition, can adopt wherein by comparing data that obtain in advance by first and second image pick-up devices and the data that obtain by first and second image pick-up devices (current), the structure of the aligning between realization die and the parts to be processed.In addition, can also adopt wherein by in the several zones in the image pickup scope of first and second image pick-up devices each to compare, realize the structure of the aligning between die and the parts to be processed.

In addition, in order to realize disposal route, can adopt following structure by above-mentioned pattern transfer.

In described disposal route, use to observe at first object space on the treatment surface of die with in optical system than second object space on the part of the more approaching parts to be processed of treatment surface of die.In described processing, can realize the aligning between die and the parts to be processed by using identification to observe first image pick-up device of first object space and observing the device of the relativeness (perhaps difference) of the observation place between second image pick-up device of second object space.In this case, can adopt reference substrate wherein to be used as the structure of the device of the difference of discerning the aspect, observation place.In addition, can adopt disposal route wherein to comprise step, and realize the structure of the step of the aligning between parts to be processed and the die at second object space by the difference of reference substrate identification aspect, observation place.In addition, can adopt wherein by comparing data that obtain in advance by first and second image pick-up devices and the data that obtain by first and second image pick-up devices (current), the structure of the aligning between realization die and the parts to be processed.In addition, can also adopting wherein, disposal route comprises the step of selecting a plurality of zones from the image that first image pick-up device obtains, realize the step of first signal Processing in each zone in described a plurality of zones and realize the structure of the step that secondary signal is handled according to the result of first signal Processing.In addition, can adopt wherein overlapping or superpose and have the grating of different spacing as aforesaid alignment mark by use, the data that obtain by first and second image pick-up devices, thereby and it carried out signal Processing produce Moire fringe, and utilize the structure of the Moire fringe that produces.

In the above embodiment of the present invention, the optical system of two object spaces by using coaxial-observation die and substrate is utilized reference substrate to measure or is determined that respective image at two (first and second) object spaces picks up the relative position relation between the scope.By utilizing measurement result, can realize the aligning between die and the substrate.Thereby, can under die and state that substrate separates, realize aiming at, make under situation not to die and substrate damage, can be with the aligning between realization of High Speed die and the substrate.In addition, by the mark that is used for die and substrate being placed the zones of different as seeing along normal direction, the interference between the mark of die and substrate can not appear being used for.Thereby it is easy that signal Processing becomes.

In addition, pattern transfer equipment according to the present invention also can as described belowly constitute.Here, described equipment means the pattern transfer equipment that is transferred in the imprinted pattern that forms on the die on the substrate or on the resin material between substrate and the die.Pattern transfer equipment comprises that acquisition obtains the first image pickup part of image and obtains the second image pickup part of image in second depth of focus in first depth of focus.First alignment mark that offers die is disposed in first depth of focus with second alignment mark that offers substrate, and partly observes by first image pickup, thereby obtains first image.In addition, the 3rd mark that offers die or substrate is disposed in second depth of focus, and partly observes by second image pickup, thereby obtains second image.Pattern transfer equipment is so constructed, and makes by using first and second images relevant information of difference of range of observation aspect between acquisition and first and second image pick-up section are divided.The 3rd alignment mark can be identical or different with first alignment mark or second alignment mark.

In addition, in the alignment mark that is used for die is disposed in first depth of focus, and the alignment mark that is used for substrate is disposed under the interior state of second depth of focus, also can be along the aligning between direction realization die and the substrate (imprinted pattern will be transferred on it) in the face.In addition in the alignment mark that is used for die is disposed in second depth of focus, and the alignment mark that is used for substrate is disposed under the state in first depth of focus, also can realize aligning between die and the substrate along direction in the face.

Be described more specifically the present invention below with reference to the accompanying drawings.

(embodiment 1)

In embodiment 1, with the die among explanation the present invention and the alignment methods of substrate.

Fig. 1 (a)-1 (d) is the synoptic diagram of the alignment methods of the die that wherein uses reference substrate of graphic extension present embodiment and substrate.

Referring to Fig. 1 (a)-1 (d), Reference numeral 101 expressions first object space, Reference numeral 102 expressions second object space, Reference numeral 103 expression dies, Reference numeral 104 expression die marks.In addition, Reference numeral 110 expression reference substrates, Reference numeral 111 expression reference substrate marks, Reference numeral 112 expression substrates, Reference numeral 113 expression base plate marks.

In the alignment methods of present embodiment, be used for observing (observe) be positioned at die 103 treatment surface first object space and be positioned at the optical system of second object space 102 of substrate 112 1 sides with respect to described treatment surface.By this optical system, can observe die mark 104 and base plate mark 113 simultaneously.

First object space 101 and second object space 102 separate for example several nanometers or farther, even make that when along in the face that is parallel to treatment surface during direction high-speed mobile substrate, die and substrate still are in discontiguous position and concern.

In each of Fig. 1 (a)-1 (d), middle view represents to be positioned at first range of observation 106 of first object space 101.In addition, the view on right side represents to be positioned at second range of observation 107 of second object space 102.First range of observation 106 comprises that the first image pickup scope, 108, the second range of observation 107 as the image pickup part comprise as the image pickup second image pickup scope 109 partly.In addition, the view in left side represents along perpendicular bisector, such as at the die 103 of the A-A ' line shown in the medial view of Fig. 1 (a) and the xsect of reference substrate 110 or substrate 112.

In general, be not easy to be used to observe the image pick-up device of these two (first and second) object spaces with nano level precision coaxial arrangement, thereby cause producing the difference of aspect, center between first range of observation 106 and second range of observation 107.In addition, also can cause producing the difference that each range of observation and associated picture pick up aspect, center between the scope.In addition, the difference that has aspect, center between first range of observation and the die mark.Finally the object that will aim at mutually is die and substrate, makes that in the present embodiment the center of the center of base plate mark and die mark is aligned.For the purpose of simplifying the description, suppose that first range of observation conforms to each other with the first image pickup scope, second range of observation conforms to each other with the second image pickup scope.Even make such supposition, do not lose the generality of explanation yet.In addition, for the purpose of simplifying the description, suppose that the center of first range of observation and second range of observation is only departed from the y direction.Direction from second object space to first object space is used as the forward of z direction.

The alignment methods of following brief description present embodiment.In this alignment methods, reference substrate 110 is used to the aligning between die and the substrate.

The process of alignment methods is as follows.

(1), aims at die and reference substrate (Fig. 1 (a)) at first object space by (in-plane) travel mechanism in the use face.

(2) negative sense along the z direction moves reference substrate, and constitutes and obtain its image (Fig. 1 (b)) at second object space.

(3), utilize the interior travel mechanism of face to aim at observed image and substrate (Fig. 1 (c)) at second object space.

(4) only by forward moving substrate, at the first object space align substrates and die (Fig. 1 (d)) along the z direction.

Repeatedly in the substep repetition methods of transfer printing predetermined pattern, only first on substrate realizes aiming at this many points at same substrate.Afterwards, can realize transfer printing repeatedly with the precision (Subnano-class) of travel mechanism in the face.

Be elaborated below.

For align substrates mark and the desired location that is positioned at first object space, must determine with corresponding in the desired location of first object space, should arrange the position of base plate mark at second object space.For example only during the replacement die, just carry out this operation.Fig. 1 (a) expression wherein makes reference substrate mark 111 at the state of first object space 101 corresponding to the die mark.Realize this state in the following manner.Suppose that die mark 104 is positioned at the center of the first image pickup scope, substrate is placed in the substrate retaining part, and by travel mechanism in the use face, and the center that can make reference substrate mark 111 is corresponding to die mark 104 (center).By utilizing travel mechanism in the face, can realize the aligning (position adjustments) of this moment with nano level precision.During this is aimed at, need not use the image that is positioned at second object space 102 especially.

Subsequently, as shown in Fig. 1 (b), use substrate elevating mechanism to move reference substrate, make reference substrate mark 111 arrive second object space 102 along the negative sense of z direction.During this moved, reference substrate did not depart from the xy direction.Under resulting state, observe reference substrate mark 111 at second object space 102, pick up and preserve the image under this state.At this moment, need not use the image that is positioned at first object space 101 especially.

Below with reference to Fig. 1 (c) and 1 (d), the method for aiming at die and substrate is described.Carry out this operation during the new substrate of each layout the (perhaps placing).

As shown in Fig. 1 (c),, keep the substrate retaining part of substrate 112 to be disposed in the assigned address (be called " F1-1 ") relative with die 103 by travel mechanism in the face.At this moment, observe base plate mark 113 at second object space 102.Subsequently, realize aiming at, make, make the center of the centrally aligned of base plate mark 113 at second object space, the 102 observed reference substrate marks 111 shown in Fig. 1 (b) by travel mechanism in the use face.Because die and substrate are in released state, therefore can this aligning of realization of High Speed.Preserve the assigned address (F1-1) and the difference (being called " E1-1 ") between the assigned address (being called " S1-1 ") of finishing substrate retaining part after the described aligning of substrate retaining part this moment.In this case, need not use image especially at first object space 101.

Subsequently, as shown in Fig. 1 (d),, make substrate 112 be placed in first object space 101 along the forward rising substrate 112 of z direction.At this moment, die and substrate are in the state of aiming at fully basically.Afterwards, suppose with regard to the follow-up transfer printing on the same substrate, to have described difference (departing from) (E1-1), realize impression by setting appointed positions.In this case, need not use image especially at second object space 102.

Depart from mutually at die and substrate, and be positioned under the situation outside the permissible scope, also can realize the further aligning between die and the substrate.For example because Yin Yinmo and substrate are in contact with one another by resin material causes, thereby put on the cause of the stress on die and the substrate, under the situation that depart from mutually the position of die and substrate, may need this operation.Under the situation that the position deviation between die and the substrate takes place, the bias between die and substrate equates, and during with the location independent of substrate, carries out following processing.More particularly, preserve this moment the substrate retaining part assigned address (F1-1) and finish the difference (being called " E1-2 ") between the position (being called " S1-2 ") of punctual substrate retaining part.In this case, as shown in Fig. 1 (c), realize aiming at second object space, make that the value of described difference (E1-2) is also little.Afterwards, suppose to have described difference (departing from) (E1-2), realize impression by appointed positions is set with regard to the follow-up transfer printing on the same substrate.

According to substrate certain a bit, the position deviation information between die and the substrate realizes aligning recited above on the whole surface of substrate.But also can realize the aligning between die and the substrate according to the whole lip-deep position deviation information of the substrate that before aiming at, obtains.

Below with reference to Fig. 2 (a)-2 (c) of the structure of representing reference substrate, the structure of the reference substrate that uses in the present embodiment is described.

Also can use substrate itself conduct that will be transferred imprinted pattern with reference to substrate.But, in this case, substrate deformation during worry can be processed, and the difference between each substrate.For this reason, preferably use stable reference substrate.

Reference substrate 201 shown in Fig. 2 (a) be shaped as square, and be so constructed, make the size zone 202 identical be disposed on the reference substrate 201 with the area of the pattern of die, four reference pattern marks 203 are disposed in four jiaos of zone 202.

Reference basic 204 shown in Fig. 2 (b) be shaped as circle, and be so constructed, make size and will be transferred substrate measure-alike of imprinted pattern on it.On reference substrate 204, there is the area of the pattern 206 that the area of the pattern 205 of reference substrate mark wherein is set and the reference substrate mark wherein is not set.In this structure, can realize the correction of position deviation in the several position that the reference substrate mark is set.

Reference substrate 207 shown in Fig. 2 (c) is made of the substrate itself that will be transferred imprinted pattern on it.In this case, all positions that can be in area of the pattern 208 or carry out described correction in the several position shown in Fig. 2 (b).

Below with reference to Fig. 3 of the structure of representing optical system, the optical system of using in the present embodiment that is used to measure is described.

In the optical system of present embodiment, the light that sends from light source 301 arrives die 309 and substrate 312 by lamp optical system 302, first spectroscope 303, first optical imaging system 304.The light of die 309 and substrate 312 reflections forms image by first optical imaging system 304, first spectroscope 303, second optical imaging system 306 and second spectroscope 305 on first image pick-up device 307 and second image pick-up device 308.First object space 313 is formed on first image pick-up device 307, and second object space 314 is formed on second image pick-up device 308.In the present embodiment, die mark 310 forms the image on first image pick-up device 307, and second mark 311 forms the image on second image pick-up device 308.

The treatment facility that uses in the present embodiment is described below with reference to Fig. 4, described treatment facility constitutes being transferred to substrate or the pattern transfer equipment on the resin material between substrate and the die in the imprinted pattern that forms on the die, and Fig. 4 represents an example of the structure of the treatment facility among the embodiment 1.

Referring to Fig. 4, treatment facility comprises exposure light source 401, lens barrel (body tube) 402, die retaining part 403, substrate retaining part 404, substrate elevating mechanism (z to) 405, travel mechanism in the face (xy to) 406, optical measuring system 407 shown in Fig. 3, image pick-up device 408 and analysis institution 409.

Die retaining part 403 is installed according to realization dies 411 such as vacuum cup chucking method.Substrate 412 can move to desired location by travel mechanism in the face 406.In addition, by substrate elevating mechanism 405, can realize that the height adjusting and the pressure of substrate 412 applies.Travel mechanism 406 and substrate elevating mechanism 405 carry out range observation by interferometer with the control accuracy of Subnano-class in the face.Move the position of substrate, pressure applies, the control of exposure etc. is undertaken by impression control gear 410.

(embodiment 2)

In embodiment 2, the aligning die that explanation is different with the alignment methods of embodiment 1 and the method for substrate.

In the present embodiment, will be omitted, will only describe its different formation with the explanation of the total alignment methods of Fig. 1 (a)-1 (d).

Fig. 5 (a)-5 (c) comprises the synoptic diagram of the alignment methods between graphic extension die 502 and the substrate 513.

In the present embodiment, on two surfaces of reference substrate 505, arrange the first reference substrate mark 506 and the second reference substrate mark 504 respectively.In addition, make the optical thickness of reference substrate 505 equal distance between first object space 501 and second object space 503.As described below,, can determine simultaneously on second object space that the position that base plate mark should be moved to is so that base plate mark is aligned in the desired location of the die mark of first object space according to these features.

Fig. 5 (a) comprises and represents that the first reference substrate mark 506 of reference substrate 505 wherein is positioned at the synoptic diagram of the situation of first object space 501.In addition, the second reference substrate mark 504 is positioned at second object space 503.The first reference substrate mark 506 is disposed in the first image pickup scope 510 that is arranged in first range of observation 509.In addition, the second reference substrate mark 504 is disposed in the second image pickup scope 512 that is arranged in second range of observation 511.Difference between the center in the Reference numeral 508 expression first and second image pickup scopes 501 and 512.

At first, reference substrate 505 is disposed on the substrate retaining part (not shown), according to die mark 507, is realized the aligning (position adjustments) of the first reference substrate mark 506 at first object space 501 by travel mechanism in the face.More particularly, for example, so that the center of the first reference substrate mark 507 realizes aiming at the mode that the center of die mark 506 conforms to each other.At this moment, the second reference substrate mark 504 is positioned at second object space 503, and its image is saved.

Afterwards, remove reference substrate 505 from the substrate retaining part.

The following describes the alignment methods of substrate.This method is identical with method among the embodiment 1 basically.

More particularly, as shown in Fig. 5 (b), keep the substrate retaining part of substrate to be arranged in the assigned address relative (being called " F2-1 ") with die by travel mechanism in the face.At this moment, observe first base plate mark 514 and second base plate mark 515 at second object space.Subsequently, by utilizing travel mechanism in the face, so that the mode of the centrally aligned of first base plate mark 514 at the center of the reference substrate mark 504 of second object space, 503 observations shown in Fig. 5 (a) realizes aiming at.The assigned address (F2-1) of preserving substrate retaining part this moment with in the difference of finishing between the assigned address (being called " S2-1 ") of aiming at substrate retaining part afterwards.

Fig. 5 (c) expression wherein keeps the substrate retaining part of substrate to be raised, and makes first and second base plate marks 514 and 515 be disposed in the state of first object space 501.In this state, normally finish aligning between die and the substrate.Afterwards, suppose to have described difference (departing from) (E2-1),, realize aiming at by appointed positions is set with regard to the follow-up transfer printing on the same substrate.

Depart from mutually and be positioned under the situation outside the permissible scope at die and substrate, be similar to embodiment 1, by travel mechanism in the use face,, second base plate mark 515 is aligned on the position according to die mark 507 at first object space 501 shown in Fig. 5 (c).In this case, be implemented in the aligning of second object space 503 shown in Fig. 5 (b), thereby the position deviation degree is little.Preserve the assigned address (F2-1) of substrate retaining part and finish the difference (being called " E2-2 ") between the position (being called " S2-2 ") of punctual substrate retaining part.Afterwards, suppose to have described difference (departing from) (E2-2), realize impression by appointed positions is set with regard to the follow-up transfer printing on the same substrate.

(embodiment 3)

In embodiment 3, that explanation is a kind of in dies different with the alignment methods of embodiment 1 aspect the image processing method and base plate alignment method.

In the present embodiment, will be omitted, only describe its different formation with the explanation of the total alignment methods of Fig. 1 (a)-1 (d).

Fig. 6 (a)-6 (c) comprises the synoptic diagram of the image processing method in the graphic extension present embodiment.

At first, the situation that explanation is wherein observed reference substrate 613 at first object space 601.Fig. 6 (a) represents that the reference substrate mark 614 of reference substrate 613 wherein is positioned at the state of first object space 601.In the present embodiment, in the first image pickup scope 608 in first range of observation 605, according to die mark 604, first area A 610 is designated as the zone of the die mark 604 that comprises die 602.Afterwards, exist between the adjacent area under certain distance situation of (at interval), specifying first area B 611 and first area C 613.By moving, adjust the position of reference substrate mark 614 with respect to first area C 613 by travel mechanism in the face.At this moment, for example, from image, select or extract first area A 610 and first area C 612, the image degree of comparing of each extraction is regulated by realization, and the signal Processing of two images of stack extraction, first area C613 is placed in the desired position.After the aligning of finishing between reference substrate mark 604 and the first area C 612, reference substrate 613 is dropped to second object space 603 of observing reference substrate mark 604 by substrate elevating mechanism.Difference between the center in the Reference numeral 606 expression first and second image pickup scopes 608 and 609.Fig. 6 (b) represents that the reference substrate mark 604 of reference substrate 613 wherein is positioned at the state of second object space 603.In this state, in the second image pickup scope 609 in second range of observation 607, specify second area C 617, make to comprise reference substrate mark 604 according to reference substrate mark 604.Afterwards, exist between the adjacent area under the certain distance situation of (at interval), specifying second area B 616 and second area A 615.Afterwards, remove reference substrate 505 from the substrate retaining part.

Below, the alignment methods of substrate is described.Fig. 6 (c) comprises that graphic extension wherein observes the figure of the situation of substrates 618 at second object space 603.

More particularly, as shown in Fig. 6 (c),, keep the substrate retaining part of substrate to be placed in the assigned address relative (being called " F3-1 ") with die by travel mechanism in the face.At this moment, observe base plate mark 619 at second object space.In this state, from image, select or extraction second area B 616, and be superimposed upon on the image of the second area C 617 that obtains in the operation that illustrates with reference to figure 6 (b), thereby realize position adjustments.Can this position adjustments of realization of High Speed, because do not produce contacting of die and substrate this moment.Incidentally, in advance each image is carried out signal Processing such as contrast adjustment.

The situation of wherein observing substrate 618 at first object space 601 will be described below.

Fig. 6 (d) represent substrate 618 wherein by elevating mechanism along z to forward raise, thereby base plate mark 619 is arranged in the state of first object space 601.In this state, normally finish the aligning between die 602 and the substrate 618, make that resulting position deviation expection is the level in allowable range.Preserve the assigned address (F3-1) and the difference (being called " E3-1 ") between the assigned address (being called " S3-1 ") of finishing substrate retaining part after the aligning of substrate retaining part this moment.Afterwards, suppose to have described difference (departing from) (E3-1),, realize impression by appointed positions is set with regard to the follow-up transfer printing on the same substrate.

Die and substrate depart from mutually therein, and are positioned under the situation outside the allowable range, are similar to embodiment 1, finally the aligning of realizing between dies 602 and the substrate 618 at first object space 601.In this case, be implemented in the aligning of second object space 603 shown in Fig. 6 (c), made that the position deviation degree is little.Preserve the assigned address (F3-1) of substrate retaining part and finish difference (being called " E3-2 ") between the position (being called " S3-2 ") to punctual substrate retaining part.Afterwards, suppose to have described difference (departing from) (E3-2), realize impression by appointed positions is set with regard to the follow-up transfer printing on the same substrate.

As mentioned above, utilize the effect of the zones of different in the image pickup scope of image pick-up device to be that the reflection coefficient of die and substrate differs from one another, thereby can be independently the image of die and substrate be carried out signal Processing, to promote the raising of alignment precision.In addition, needn't consider the influence of phase mutual interference, because die and substrate make it possible to improve the degree of freedom of mark not by vertically superposed mutually.

Below, will illustrate by via Flame Image Process, in mark, produce More (moire) striped, realize the method for high precision alignment.

Fig. 7 (a)-7 (f) is illustrated among the embodiment 3, when by Moire fringe is carried out Flame Image Process, realizes the synoptic diagram to the alignment mark of punctual use.

Fig. 7 (a) expression comprises having spacing P ₁Strip pattern 701 and have spacing P ₂First mark of strip pattern 702.Fig. 7 (b) expression comprises having spacing P ₁Strip pattern 701 and have spacing P ₂Second mark of strip pattern 702, wherein strip pattern 701 and 702 have with first mark shown in Fig. 7 (a) in strip pattern 701 and 702 opposite arrangements.By overlapped first mark and second mark, form the composograph 706 as shown in Fig. 7 (c).In composograph 706, the Moire fringe in left side and the Moire fringe on right side be homophase each other.The state of the aligning between mark and the substrate is wherein finished in Fig. 7 (c) expression.

Incidentally, do not finish therein under the state of the aligning between mark and the substrate, the Moire fringe in left side and the Moire fringe on right side be out-phase each other.The spacing P that Moire fringe has and represented by following equation _MThe cycle that equates:

$P_M=\frac{P_1{\mathrm{<figure-callout\; id="2"\; label="P"\; filenames="A20071010080900441.png"\; state="\{\{state\}\}">P</figure-callout>}}_2}{|P_1-{\mathrm{<figure-callout\; id="2"\; label="P"\; filenames="A20071010080900441.png"\; state="\{\{state\}\}">P</figure-callout>}}_2|}$

As mentioned above, under unfavorable situation of amplifying with optics, the position deviation between die and the substrate is exaggerated.

Subsequently, Moire fringe is aligned to first mark 709 that XY θ measures that is used for that constitutes as shown in Fig. 7 (d), and wherein first mark 709 comprises first area 710, second area 711, the 3rd zone 712, the 4th zone 713, has spacing P ₃Pattern 707 and have spacing P ₄Pattern 708.In addition, Moire fringe is aligned to second mark 714 that XY θ measures that is used for that constitutes as shown in Fig. 7 (e), wherein second mark 714 comprise first～the 4th regional 710-713 and with Fig. 7 (d) in pattern 707 and the pattern 707 and 708 of 708 opposed alignment.With regard to second mark 714 shown in first mark 709 shown in Fig. 7 (d) and Fig. 7 (e), in the first and the 3rd zone 710 and 712, can realize aligning, in the second and the 4th zone 711 and 713, can realize aligning about x direction and θ about y direction and θ.Fig. 7 (f) is illustrated in and finishes after the aligning, comprises the composograph 716 that is used for XY θ measurement of the Moire fringe 715 that is used for XY θ measurement.

At semiconductor, in the manufacturing technology of optical device such as photonic crystal and the biochip such as μ-TAS etc., can utilize according to the said equipment of the present invention and method.

(embodiment 4)

In embodiment 4, with another embodiment of explanation optical system of description in embodiment 1.Especially, present embodiment is suitable for the contrast adjustment of description in embodiment 3.This is because when the image of the mark that picks up different die of reflection coefficient and substrate in identical visual field, can not guarantee enough contrasts, thereby disturbs accurately measurement in some cases.

Therefore, importantly mark is placed in when from vertical direction observation mark, and mark can optically not influence each other unfriendly, so that each mark is regulated independently the position of contrast.

The reason of vertical direction be mark or substrate along z to being moved, thereby need avoid the variation of the mobile mark position that causes in image pick-up device by mark or substrate.For this reason, when observing mark obliquely, signal processing method is required the change in location corresponding to mark.

The die mark has high transmissivity, thereby the die mark is easy to have the contrast lower than base plate mark.

In general, along with the increase of contrast, measuring accuracy is enhanced, and makes that needing the contrast on die and the substrate is peaked adjustment.

Below with reference to Fig. 8 (a) and 8 (b) optical measuring system in the present embodiment is described, Fig. 8 (a) and 8 (b) all represent the structure of optical measuring system.

Fig. 8 (a) expression wherein first optical device 801 and second optical device 802 is placed in structure before first image pick-up device 307 and second image pick-up device 308 respectively.Each optical device is made of color filter, interference filter, ND (neutral density) optical filter, polariscope and their combination.Select first and second optical device rightly according to reflection coefficient.In fact also can use the color filter of colored CCD (charge-coupled image sensor).

Fig. 8 (b) expression wherein arrives the light of each position of image pick-up device by first and second optical device 803 and 804 structures of regulating.In this case, different first optical device 803 and second optical device 804 of characteristic is disposed in respectively in the image pickup scope of first image pick-up device 307 and second image pick-up device 308 with the position difference, makes according to the position adjustments contrast.In this structure, can realize aiming at first object space and second object space.In addition, even when being positioned at first object space, under the situation that the reflection coefficient of die and substrate differs from one another,, can easily realize aiming at by direct use die mark and base plate mark when base plate mark.

Fig. 9 (a) expression is wherein used corresponding to each die mark and base plate mark, regulates the amount of light, so that the structure of the optical system of the fader control mechanism 901 of realization contrast adjustment.

In the structure shown in Fig. 9 (b), rotary shutter (shutter) 902 is used to change the amount from the light of light source 301.According to the reflection coefficient of die and substrate, the dimmer position of rotary shutter is switched.

In the optical system shown in Fig. 9 (a) and 9 (b), pick up the image of die mark and the image of base plate mark with first light quantity and second light quantity respectively, make by image pick-up operation being divided into first operation and second operation, twice realization image pickup.

By characteristic according to die and substrate, change light quantity as mentioned above, perhaps change the time shutter or the exposure gain of image pick-up device, can realize image pick-up operation.

The embodiment that is used for the mark of the aligning between die and the substrate in Figure 10 (a) and 10 (b) the expression frame in the frame alignment methods.In these figure, image pick-up device has wherein to die to be provided the first area A 610 of die mark 104 and the second area B 611 of base plate mark 113 wherein is provided to substrate.Because it is use the optical system of present embodiment, therefore optimised at the reflection coefficient of the position of die mark 104 and base plate mark 113.

Figure 10 (c) and 10 (d) are illustrated respectively in the structure of the grating type die mark 701 among the first area A 610 of die and the structure of the grating type base plate mark 702 in the second area B 611 of substrate.These structures are particularly suitable for realizing the situation of nanoscale aligning.Owing to use the optical system of present embodiment (embodiment 4), so the reflection coefficient of die and substrate is optimised.

Explain orally the Figure 11 (a) and 11 (b) of the process flow diagram of clear signal disposal route below with reference to presentation graphs, the signal processing method in the present embodiment is described.

Figure 11 (a) is the process flow diagram that graphic extension does not wherein realize the situation of magnification correction.

Referring to Figure 11 (a), in step S-1, obtain the image of first area A and second area B.Preferably first area A has identical size (area) with second area B.This is because in many cases, equating among number of samples that the FFT in the A of first area (Fast Fourier Transform (FFT)) analyzes and the second area B.

Be different from the area of first area A under the situation of area of second area B, must realize that the former state expansion is positioned at the data of periphery, makes the first and second regional A and B have processing of the same area.

In step S-2, in the A of first area, realize signal Processing A subsequently, in second area B, realize signal Processing B.Signal Processing A and B all are the common filtering that utilizes low-pass filter, Hi-pass filter, bandpass filter, FFT-wave filter, smoothing filter, difference filter etc.In addition, realize gain-adjusted, so that optimize contrast according to the reflection coefficient and the similar factor of die and substrate.

In step S-3, calculate subsequently.By the addition of realization image, the multiplication of image, the calculating of difference between the image perhaps utilizes the calculating of the image of other function, realizes described calculating.

In step S-4, realize signal Processing C subsequently by utilizing with wave filter like the filter class of in step S-2, using.

Detection position in step S-5 at last.

Figure 11 (b) is the process flow diagram that the step S-2 under the situation of representing wherein to represent in Figure 11 (a) is divided into the situation of step S-21 that carries out magnification correction and the step S-22 that carries out signal Processing A and signal Processing B.Especially, in this impression, the height of die and substrate is changed.Corresponding therewith, optical magnification also is changed.In this case, when not carrying out magnification correction, high precision alignment might can not be realized.The method that realizes magnification correction can be the distance and its designated value between the adjacent ribbons relatively for example, and changes coefficient, makes the method that described distance conforms to described designated value.Incidentally, by utilizing 2-D data or by 2-D data is converted to one-dimensional data, can performing step S-2 and subsequent step in signal Processing.

In the present embodiment, the situation of using two (first and second) zone has been described, but the zone that also can use three or more.

The following describes the example of the signal Processing under the situation of in the above-mentioned signal Processing of present embodiment, using the base plate mark shown in the die mark shown in Figure 10 (a) and Figure 10 (b).

At first, in step S-1, obtain the image of regional A and area B.In step S-2, realize magnification correction and the filtering that utilizes smoothing filter in each regional A and the area B, to reduce noise.In addition, the contrast of control band A and B.In step S-3, regional A after the signal Processing and the image of B are added.This state class is similar to the state under optical superposition (stack) situation.In step S-4, realize utilizing the further signal Processing of smoothing filter etc.In step S-5, the detection position.

Incidentally, as method for processing signals, except said method, also can directly determine the center of gravity of mark among regional A and the B at step S-2.In addition, in step S-3, calculate the difference between the center of gravity.In step S-4, do not realize signal Processing especially.In step S-5, described difference is converted into the distance between die and the substrate.The condition of finishing of aiming at is that described difference is zero.Said method also is suitable for present embodiment.

Below, the example of the signal Processing under the situation of the base plate mark that uses the die mark with the periodic structure shown in Figure 10 (c) and have the periodic structure shown in Figure 10 (d) is described in the above-mentioned signal Processing of present embodiment.

At first, in step S-1, obtain the image of regional A and area B.In step S-2, carry out magnification correction and pass through to realize of the conversion of the 2-D data of equalization processing to one-dimensional data.In addition, by using fft filters, obtain the component of the basic frequency of periodic structure.In step S-3, resulting value is multiplied each other by arithmetic.This multiplication is represented by following equation.

$\sin \left(\frac{2\mathrm{\&pi;}}{P_1}x\right)\&times;\sin \left\{\frac{2\mathrm{\&pi;}}{P_2}(x+\mathrm{\&delta;})\right\}=\frac{1}{2}[-\cos \{\frac{2\mathrm{\&pi;}}{P_1}x+\frac{2\mathrm{\&pi;}}{P_2}(x+\mathrm{\&delta;})\}+\cos \{\frac{2\mathrm{\&pi;}}{P_1}x-\frac{2\mathrm{\&pi;}}{P_2}(x+\mathrm{\&delta;})\left\}\right]$

In above-mentioned equation, δ represents position deviation, the component of second expression Moire fringe on right side.

In step S-4,, can be simply the right side be divided into first Xiang He that represents low frequency component and represents second of high fdrequency component by FFT.Thereby, can extract following component as Moire fringe.

$\cos \{2\mathrm{\&pi;}(\frac{1}{P_1}-\frac{1}{P_2})x-\frac{2\mathrm{\&pi;}}{{\mathrm{<figure-callout\; id="2"\; label="P"\; filenames="A20071010080900441.png"\; state="\{\{state\}\}">P</figure-callout>}}_2}\mathrm{\&delta;}\}$

In step S5-5, extract following phase component.

$-\frac{2\mathrm{\&pi;}}{{\mathrm{<figure-callout\; id="2"\; label="P"\; filenames="A20071010080900441.png"\; state="\{\{state\}\}">P</figure-callout>}}_2}\mathrm{\&delta;}$

According to this phase component, can detect the δ relevant with the position.

In this aligning (position adjustments), in many cases, the condition of finishing aligning is used as described phase component when being zero.

Incidentally, as the grating type mark, can use Fig. 7 (a) with different spacing and the grating type mark 703 and 704 shown in 7 (b).More particularly, these marks are arranged in parallel to each other, and according to each basic frequency of grating, produce two groups of Moire fringes with uniform distances.By using these Moire fringes, also can realize the aligning between die and the substrate.

Incidentally, overlapping (stack) and the essential difference between the optical superposition (stack) of pattern such as grating pattern in the signal Processing of present embodiment will be described below.

The former (signal Processing) is overlapping to be perfect condition, but the latter (optics) overlapping adverse effect that is subjected to repeatedly reflecting etc.Especially, has under the situation of different reflection coefficients the adverse effect that optical superposition is subjected to repeatedly reflecting at die and substrate.Therefore, depend on detection algorithm, under a little situations, in measurement, error can occur.For this reason, in present embodiment, signal Processing is overlapping to be important, so that have when vertically observing by utilization, the mark of the grating pattern that does not conform to each other obtains desirable signal, thereby causes the less error that occurs.

Incidentally, in order to improve contrast,,, change the transmission wavelength scope of the wave filter that offers light source or image pick-up device preferably according to the gap between die and the substrate from improving the viewpoint of contrast.

For example, just place resin material on the substrate surface, transfer printing to be formed in the method for stamping of the pattern on the treatment surface of die, change wavelength coverage in the following manner by curing.

When observing by image pick-up device when offering the alignment mark of die, according to the spacing between die and the substrate or constitute the thickness of the parts of alignment mark, control enters the wavelength of the light of image pick-up device.More particularly, in method for stamping, the resin material that is transferred pattern is placed between die and the substrate.Under the approximating situation of the refractive index of resin material and die, can cause occurring being called the phenomenon of refractive index match, make to be included in the projection that forms on the die and the alignment mark of depression disappears.In the observation of reality, be difficult to observe the alignment mark of die.

In order to eliminate the refractive index match phenomenon that the die mark is disappeared, effectively use the mark that forms by high-index material.

But in method for stamping, the spacing between die and the substrate can be tens nanometers to the hundreds of nanometer.In this case, because the interference effect of light, the contrast of mark can be lowered, thereby requires further improvement.

The following describes the reason of preferably die (especially in the alignment mark part) that is used to impress being used high-index material.

Suppose that the die mark is 1.45 SiO by refractive index ₂, refractive index is 1.5 resin material, and refractive index is 2.0 SiN formation, and refractive index is n so ₁And n ₂Material between reflection coefficient at the interface represent by following equation.

$R={\left(\frac{n_1-n_2}{{\mathrm{<figure-callout\; id="1"\; label="n"\; filenames="A20071010080900441.png"\; state="\{\{state\}\}">n</figure-callout>}}_1+n_2}\right)}^2$

Therefore, SiO ₂And the reflection R at the interface between the resin material is:

R＝2.9×10 ^-4

This value is very little.When observing mark, because the cause of refractive index match recited above, mark is not too visible.

On the other hand, the reflection R at the interface between SiN and the resin material is:

R＝2.0×10 ^-2

This value compares SiO ₂And big approximately 2 orders of magnitude of the reflection coefficient at the interface between the resin material.Here, SiO ₂And the reflection R at the interface between the air is:

R＝3.4×10 ^-2

As mentioned above, find that reflection coefficient is improved greatly by using the material of SiN as the die mark.

Incidentally, in method for stamping, the thickness of the film that spacing between die and the substrate and high-index material constitute can arrive the hundreds of nanometer for tens nanometers.In this case, obviously obtain optical interference effect.

Figure 12 is illustrated in the die mark and has the SiO of comprising ₂Layer, the SiN layer, resin material (thickness (spacing): the 100 nanometers) four-layer structure of layer and Si layer, and under the situation of the variable thickness of SiN layer, the relation between wavelength and the intensity of reflected light.More particularly, Figure 12 represents the Si layer that has very big thickness about comprising, the resin material layer of 100 nanometer thickness that on the Si layer, form, at the SiN layer that forms on the resin material layer (thickness: 20 nanometers, 50 nanometers, 150 nanometers) and thickness greatly and be arranged in SiO on the SiN layer ₂The analog result of the four-layer structure of layer.

Utilize the calculating of Fresnel reflection model value.Employing is by omitting the three layers of (SiO that comprise that the SiN layer prepares from above-mentioned four-layer structure ₂Layer/resin material layer/Si layer) three-decker as a reference.

In the four-layer structure that comprises the SiN layer with lack under the situation about differing greatly between three layers of (reference) structure of SiN layer, the contrast that obtains when observing mark is better.

For example, under the wavelength of 600 nanometers, when the thickness of SiN layer was 50 nanometers, intensity of reflected light was 0.27, and when the thickness of SiN layer was 150 nanometers, intensity of reflected light was 0.11.Under the 400-800 nano wave length, reference configuration provides 0.11 intensity of reflected light, makes that the contrast under 600 nano wave lengths is increased according to the order of the SiN layer thickness of 150 nanometers, 20 nanometers and 50 nanometers.Under the wavelength of 800 nanometers, contrast is increased according to the order of 20 nanometers, 50 nanometers and 150 nanometers (SiN layer thickness).In addition, under the wavelength of 400 nanometers, under the SiN of 20 nanometers layer thickness, contrast is the highest.

Figure 13 is illustrated in the die mark and has the SiO of comprising ₂Layer, the SiN layer (thickness: 50 nanometers), the four-layer structure of resin material layer and Si layer, and under the situation as the variable thickness of the resin material layer of clearance layer, the relation between wavelength and the intensity of reflected light.More particularly, the value of thickness (gap) is 50 nanometers, 100 nanometers and 200 nanometers.

When the intensity of reflected light under 600 nano wave lengths relatively, for the gap (resin material layer thickness) of 100 nanometers, intensity level is 0.273, and for the gap of 50 nanometers, intensity level is 0.099, and for the gap of 200 nanometers, intensity level is 0.033.Because under the 400-800 nanometer, the intensity of reference configuration is 0.11 (Figure 12), therefore the contrast under 600 nano wave lengths increases according to the order of 50 nanometers, 200 nanometers and 100 nano gaps.Contrast under 500 nano wave lengths increases according to the order of 200 nanometers, 50 nanometers and 100 nano gaps.In addition, the contrast under 800 nano wave lengths increases according to the order of 100 nanometers, 50 nanometers and 200 nano gaps.

As mentioned above, be about tens nanometers under the situation of hundreds of nanometer (part of observation light wavelength is to several times of the observation light wavelength) at SiN layer thickness or gap (resin material layer thickness), reflection coefficient is changed along with wavelength.For this reason, preferably enter the wavelength of the light of image pick-up device according to SiN layer thickness or described clearance control.

Incidentally, when the spectrum of the light that enters image pick-up device was in the scope of 400-800 nanometer, (intensity: determined by the difference 0.11) by the mean value of the spectrum in this scope and reference value for contrast.

The following describes alignment methods.

In this was aimed at, alignment precision improved along with the increase of the contrast of die mark.The following describes when making die and substrate approaching mutually, under the situation that realizes aiming at, the observation wavelength of described mark.In this case, the thickness of SiN layer is 50 nanometers.When the gap is 200 nanometers, under the 400-450 nano wave length, observe described mark.When under the state that further approaches, when the gap is 100 nanometers, under the 500-550 nano wave length, observe described mark.When under the state that further approaches, when the gap is 50 nanometers, under the 400-450 nano wave length, observe described mark.Even described gap is another value, also under optimal wavelength, observe described mark.

Selecting the method for wavelength can be the method for utilizing the method for color filter or utilizing a plurality of laser beam.Color filter can be placed in illumination optical system and unify side, perhaps is placed in image pick-up device one side.

For example, in the above among Shuo Ming embodiment and the embodiment 1-4, by wavelength filter the situation of optical information input picture pick device under, by change the transmission wavelength scope of wavelength filter according to the gap, always can obtain and have the image-related information of high-contrast.In addition, passing through curing resin material in substrate surface, transfer printing is formed in the Embosser of the pattern on the treatment surface of die, best described equipment comprises the image pick-up device of observing die, and, control the device of the wavelength of the light that enters image pick-up device according to the gap between die and the substrate.The device of control wavelength is by color filter or (can under a plurality of wavelength output light flux) a plurality of light sources.

As mentioned above, according to the present invention, during impressing, die or substrate are damaged not too easily, and can realization of High Speed aim at.In addition, lamp optical system can be simplified, and makes it possible to reduce equipment cost.

Though with reference to structure disclosed herein the present invention has been described, but has been not limited to details described herein, the application is intended to cover with improved purpose all such modification or variations that carry out or within the scope of the following claims.

Claims (28)

1, a kind of handle is transferred on the substrate that possesses alignment mark possessing the imprinted pattern that forms on the die of alignment mark, perhaps is transferred to the pattern transfer equipment on the resin material that places between substrate and the die, and described pattern transfer equipment comprises:

Obtain first image pick-up device of image at first object space; With

Obtain second image pick-up device of image at second object space that separates with first object space,

The alignment mark of the alignment mark of die and substrate wherein, perhaps the alignment mark of reference substrate can be placed on first object space, and the alignment mark of substrate or reference substrate can be placed on second object space,

Wherein observe the alignment mark be placed on first and second object spaces by first and second image pick-up devices, thus obtain with by the relevant information of the difference of aspect, picture position between the alignment mark of first and second image pick-up devices observation and

Wherein according to the aligning between die and the substrate on the direction in the information realization face that obtains, thereby imprinted pattern is transferred on substrate or the resin material.

2, according to the described equipment of claim 1, wherein by relatively at the image of the reference substrate of first Data Position and image at the reference substrate of second object space, obtain the information relevant with the difference of aspect, picture position.

3, according to claim 1 or 2 described equipment, wherein the distance between first object space and second object space is equal to or greater than substrate and is formed at the distance that the imprinted pattern on the die is in contact with one another indirectly by resin material.

4, according to the described equipment of claim 2, wherein reference substrate possesses at it in the face of the lip-deep alignment mark of substrate with at its lip-deep alignment mark in the face of die, and thickness equals the distance between first object space and second object space.

5, according to claim 2 or 4 described equipment, the alignment mark that wherein offers reference substrate is disposed in the measure-alike zone of pattern area of size and die.

6, according to claim 2 or 4 described equipment, wherein reference substrate is made of the substrate itself that the imprinted pattern that is formed on the die will be transferred on it.

7, according to claim 1,2 or 4 described equipment, wherein pass through at second object space along the aligning between direction realization die and the substrate in the face, and the die of aligning and substrate directly are in contact with one another, perhaps be in contact with one another indirectly by resin material, imprinted pattern can be transferred on substrate or the resin material.

8, according to the described equipment of claim 1, wherein said pattern transfer equipment also comprises the light intensity adjusting mechanism of the amount of adjusting the light that enters described first and second image pick-up devices.

9, according to claim 8 equipment, wherein said light intensity adjusting mechanism is so constructed, and makes that in a plurality of zones of first and second image pick-up devices, the amount of light all is adjustable.

10, a kind of pattern transfer-printing method is used for perhaps being transferred on the resin material that places between substrate and the die being transferred to the substrate that possesses alignment mark possessing the imprinted pattern that forms on the die of alignment mark, and described pattern transfer-printing method comprises:

The alignment mark that offers die by handle is arranged in first object space with the alignment mark that offers reference substrate, and partly observes alignment mark by first image pickup, obtains the first step of first image;

The alignment mark that offers reference substrate by handle is arranged in second object space that separates with first object space, and partly observes alignment mark by second image pickup, obtains second step of second image; With

By using first and second images, obtain and alignment mark between the third step of the relevant information of the difference of aspect, picture position.

11, in accordance with the method for claim 10, wherein in described first step, realize the aligning between die and the reference substrate.

12, in accordance with the method for claim 10, wherein between described first step and described second step, keep reference substrate position on the direction in its face.

13, in accordance with the method for claim 10, wherein in described third step,, obtain the information relevant with the difference of aspect, picture position by comparing second image and the alignment mark that is arranged in the reference substrate of second object space.

14, according to one of any described method of claim 10-13, the alignment mark that wherein offers reference substrate is disposed in the measure-alike zone of pattern area of size and die.

15, according to one of any described method of claim 10-13, wherein reference substrate is made of the substrate itself that the imprinted pattern that is formed on the die will be transferred on it.

16, according to one of any described method of claim 10-13, wherein said pattern transfer-printing method also is included in after the described third step, by die and substrate directly are in contact with one another, perhaps be in contact with one another indirectly by resin material, thereby realize aligning between die and substrate at first object space, imprinted pattern is transferred to the 4th step on substrate or the resin material.

17, according to one of any described method of claim 10-13, wherein work as by die and substrate directly are in contact with one another, perhaps be in contact with one another indirectly by resin material, when being transferred to imprinted pattern on substrate or the resin material, in the distance that reduces from second object space that separates with first object space between die and substrate or the resin material, realize the aligning between die and substrate, thereby realize the transfer printing of imprinted pattern.

18, in accordance with the method for claim 10, wherein when passing through to use first and second images, obtain with alignment mark between the relevant information of the difference of aspect, picture position the time, described third step comprises the process of dividing a plurality of zones of selection first and second images that obtain from first and second image pick-up section, realize the process of first signal Processing in described a plurality of zones each and realize the process that secondary signal is handled according to the result of first signal Processing.

19, in accordance with the method for claim 10, wherein when passing through to use first and second images, obtain with alignment mark between the relevant information of the difference of aspect, picture position the time, described third step comprises wherein having the grating of different spacing as alignment mark by use, the data that divide to be obtained by first and second image pick-up section are superimposed and carry out signal Processing, thereby generation Moire fringe, and the process of the Moire fringe of utilization generation.

20, in accordance with the method for claim 10, wherein be used for realizing partly that at first and second image pickups light quantity regulates according to the light intensity adjusting mechanism of the described pattern transfer equipment of claim 8.

21, in accordance with the method for claim 20, wherein light intensity adjusting mechanism is used to realize the light quantity adjusting in a plurality of zones of first and second image pickups part.

22, in accordance with the method for claim 10, wherein said first step comprises by under first light quantity, partly observe alignment mark via first image pickup, obtain the process of first image, described second step comprises by under second light quantity, partly observe alignment mark via second image pickup, obtain the process of second image.

23, in accordance with the method for claim 18, wherein realize in each in described a plurality of zones in described third step according to the height change of die or substrate, carrying out the correction of magnification before the process of first signal Processing.

24, a kind of handle be formed at imprinted pattern on the die be transferred to substrate or place substrate and die between resin material on pattern transfer equipment, described pattern transfer equipment comprises:

Obtain the first image pickup part of image in first depth of focus; With

In the second image pickup part of second depth of focus acquisition image,

First alignment mark that wherein offers die is placed within first depth of focus with second alignment mark that offers substrate, and partly observes by described first image pickup, thereby obtains first image,

The 3rd alignment mark that wherein offers die or substrate is placed within second depth of focus, and partly observes by second image pickup, thus obtain second image and

Wherein by utilizing first and second images, obtain with described first and second image pick-up section branch between the relevant information of difference of range of observation aspect.

25, the aligning equipment of the aligning between a kind of disk-like object that realizes possessing the substrate of alignment mark and possessing alignment mark, described aligning equipment comprises:

Obtain first image pick-up device of image at first object space; With

Obtain second image pick-up device of image at second object space that separates with first object space,

Wherein the alignment mark of the alignment mark of the alignment mark of disk-like object and substrate or reference substrate can be placed in first object space, and the alignment mark of substrate or reference substrate can be placed in second object space,

Wherein observe the alignment mark place first and second object spaces by first and second image pick-up devices, thus obtain and the alignment mark observed by first and second image pick-up device between the relevant information of difference of aspect, picture position,

Wherein according to the aligning between disk-like object and the substrate on the direction in the information realization face that obtains.

26, the alignment methods of the aligning between a kind of disk-like object that realizes possessing the substrate of alignment mark and possessing alignment mark, described alignment methods comprises:

The alignment mark that offers disk-like object by handle places first object space with the alignment mark that offers reference substrate, and partly observes alignment mark by first image pickup, obtains the first step of first image;

The alignment mark that offers reference substrate by handle places second object space that separates with first object space, and partly observes this alignment mark by second image pickup, obtains second step of second image; With

By using first and second images, obtain with alignment mark between the third step of the relevant information of the difference of aspect, picture position.

27, the alignment methods of the aligning between a kind of second parts of realizing possessing first parts of first alignment mark and possessing second alignment mark, described alignment methods comprises:

Preparation is used to observe first image pickup part of the object that is positioned at first object space and the second image pickup part of observing the object that is positioned at second object space that separates with first object space;

Obtain with first image pickup part and second image pick-up section branch between the relevant information of difference of range of observation aspect;

In the described information of use, realize the aligning between first parts and second parts under the state that is arranged to partly to observe by first image pickup part and second image pickup respectively when second alignment mark at first alignment mark of first parts and second parts.

28, in accordance with the method for claim 27, after wherein realizing aligning under the state that second alignment mark of first alignment mark of first parts and second parts is arranged to partly to be observed by first image pickup part and second image pickup respectively, the distance between first parts and second parts is reduced.

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