CN101047153A - Semiconductor integrated circuit chip and method for forming the same - Google Patents

Abstract

A semiconductor integrated circuit chip comprises an integrated circuit chip body and a nano-surface structure resin protective film; the integrated circuit chip body has at least one surface; the nano-surface structure resin protective film is formed on the at least one surface; the nano-surface structure resin protective film contains a plurality of nano-particles and a resin material to protect the integrated circuit chip body from external interference. A method for forming the aforementioned semiconductor integrated circuit chip comprises the following steps: providing an integrated circuit chip body having at least one exposed surface; applying a synthetic resin containing a plurality of nano-particles and a resin material on the at least one surface of the integrated circuit chip body; baking the synthetic resin under appropriate environmental settings to solidify it, thereby forming a nano-surface structure resin protective film with a lotus effect to protect the integrated circuit chip body from external interference.

Description

Semiconductor integrated circuit chip and method for forming the same

technical field

The invention relates to a semiconductor integrated circuit chip and its forming method. This invention is a continuation of the Chinese invention patent application No. 200310115136.9 assigned to the assignee of this case, the filing date is November 20, 2003, and the title of the invention is "a method for surface treatment of a wafer device and a wafer device formed by using this method" .

Background technique

The present invention is related to the following patents of one of the following inventors: (a). China Invention Patent Application No. 02105960.8, the filing date is April 10, 2002, the title of the invention is "Capacitive Fingerprint Reading Chip", Publication No. It is 1450489; (b). Chinese invention patent application number 02123058.7, the application date is June 13, 2002, the title of the invention is "pressure type fingerprint reading chip and its manufacturing method", the publication number is 1464471; (c). China Invention Patent Application No. 02124906.7, the application date is June 25, 2002, the title of the invention is "Temperature Sensor and Its Fingerprint Recognition Chip Using the Temperature Sensor", and the Publication No. is 1463674; (d). Chinese Invention Patent Application No. 02132054.3, the application date is September 10, 2002, the name of the invention is "capacitive pressure micro-sensing element and its application fingerprint reading chip structure", the publication number is 1482440; (e). Chinese invention patent application number 03124183.2, the application date is May 6, 2003, and the title of the invention is "a capacitive fingerprint sensor and its manufacturing method"; (f). China Taiwan Invention Patent Application No. 093110603, the application date is April 16, 2004 , the name of the invention is "Antistatic, Stress Breakage and Anti-Fouling Interference Chip Sensor", the certificate number is Invention No. 233198; and (g) China Invention Patent Application No. 200510085423.9, the application date is July 18, 2005 The name of the invention is "Sliding Image Sensing Chip with Image Comparison Function and Its Processing Method".

In the chip manufacturing method provided in the field of semiconductor manufacturing technology, it is usually necessary to consider the electrical characteristics provided by the chip, and the chip needs to be placed in the package substrate through the packaging process to avoid any possible external forces such as pressure and static electricity. destroy.

However, with the development of the chip application field, new applications require the design to expose part of the chip surface to the environment. For example, a chip-type fingerprint sensor needs to provide a chip surface that is in contact with the finger to read the fingerprint of the finger. , used as identification.

For this reason, the mechanical characteristics of the chip surface must be considered to provide a surface characteristic of wear resistance, pressure resistance, water repellency, oil repellency and antifouling.

In the prior art, the basic structure of a capacitive fingerprint sensing chip is to manufacture relevant sensing and control processing circuits in a silicon substrate, and arrange a plurality of metal plates in an array on the surface of the chip as sensing electrodes (from which the sensing The sensing and control processing circuit and the silicon substrate below the electrode are collectively referred to as the substrate structure), and a dielectric material layer is formed on the outermost surface of the chip, which also serves as the sensing capacitor dielectric and the exposed protective layer of the chip . In order to achieve the above-mentioned pressure-resistant and wear-resistant characteristics of the chip surface, the prior art uses a hard dielectric material as the outermost protective layer, such as world patents WO 01/06448A1, WO 03/098541A1, US Patent No. 6,091,082 , European Patent EP1256899, US Patent No. 6,114,862 and US Patent No. 6,515,488 all disclose this structure. In short, the prior art invention is nothing more than a layer of hard material such as silicon oxide, silicon nitride, silicon carbide formed above the substrate structure.

Among them, silicon oxide and silicon nitride are hydrophilic materials forming a hydrophilic surface, which are likely to cause oil stains on fingers or sweat residue on fingers. Although the silicon carbide material has good water repellency, it does not have good oil repellency, and it is still easy to leave grease, which will cause image deterioration after long-term use. Furthermore, when the above materials are deposited, the surface roughness is not easy to control, and chemical mechanical polishing (CMP) is sometimes required to achieve good surface smoothness and surface characteristics that are not prone to oil residues, but this also increases the complexity of manufacturing. In US Pat. No. 6,515,488, Thomas discloses that silicon oxide is filled with a plurality of small holes by silicon oxide deposition and a subsequent CMP process to achieve a flat outer surface. However, this move makes the manufacturing process too complicated to be suitable for the manufacturing procedures of general commercial chip foundries.

In the US6762470 patent, Siegel et al. disclosed the design of making Teflon material on the surface of the chip. Part of the intention is to solve the surface characteristics of water repellency, oil repellency and antifouling. However, the fluorocarbon polymer of Teflon (Teflon is a trademark of DuPont, USA) cannot effectively bond with materials with higher surface energy such as silicon oxide and silicon nitride on the surface of the semiconductor chip. Therefore, a fingerprint sensor made of such materials will easily fall off after repeated fingerprint tests.

In order to solve this problem, the same inventor of this case disclosed in Chinese Invention Patent No. 200310115136.9 that using a silyl group on the other end of the fluorocarbon polymer is an optimal material choice, because the Si in the silyl group -O-CH ₃ or Si-OC ₂ H ₅ is easily hydrolyzed into Si-O- or Si-OH groups, which can form -Si-O-Si- Or covalent bonds or hydrogen bonds with high bonding strength such as Si-OH.

In order to facilitate manufacturing and production, the above-mentioned method is to prepare the polymer monomer into a solution form, and the treatment method is to soak the solution, such as photoresist spin coating or spray coating, Coated on the surface of a semiconductor chip, then provide a high temperature (>60°C) and high humidity (90%) environment to facilitate curing polymerization.

However, a major disadvantage of this method is that the production and curing process of the polymer monomer can only form a molecular layer thickness on the surface of the chip, that is to say, its maximum thickness is only about tens of nanometers, and it is easy to be damaged due to improper use of the chip. Scratch off, reducing the effect of antifouling.

Furthermore, since the manufacturing process of the chip inherently produces unevenness on the surface, the method of the Chinese invention patent No. 200310115136.9 cannot form a flat surface. Likewise, it is easy to accumulate dirt in the crevices on the chip surface.

Most importantly, in order to comply with future environmental protection requirements, the use of electronic products containing halogen compounds will be prohibited. For this reason, the above-mentioned method of using fluoride to solve the surface characteristics of water repellency, oil repellency and antifouling on the chip surface will have a great impact. environmental issues.

Continuing the spirit of China's No. 200310115136.9 invention patent to solve the antifouling of the chip surface and overcome the problems it faces, the present invention will provide another solution.

Contents of the invention

An object of the present invention is to provide a method for surface treatment of a semiconductor integrated circuit chip and a semiconductor integrated circuit chip formed using the method to prevent external factors such as dirt, water and grease from interfering with the semiconductor integrated circuit such as a capacitive fingerprint sensor. The operation of the circuit chip.

To achieve the above object, the present invention provides a semiconductor integrated circuit chip, which includes: an integrated circuit chip body with at least one surface; and a nanometer surface structure resin protective film formed on the at least one surface, the nanometer The surface structure resin protection film contains a plurality of nano particles and a resin material to protect the integrated circuit chip body from external interference.

In addition, the present invention also provides a method for forming the aforementioned semiconductor integrated circuit chip, including the following steps: providing an integrated circuit chip body, the integrated circuit chip body has at least one exposed surface; a synthetic resin of ester material on the at least one surface of the integrated circuit chip body; and under a suitable environment setting, the synthetic resin is baked to make it solidify to form a lotus effect (lotus effect) A resin protective film with nanometer surface structure is used to protect the integrated circuit chip body from external interference.

The effect of the present invention is significant: the main application target of the present invention is to form a nano surface structure resin protective film on the surface of a semiconductor integrated circuit chip, so that the surface of the semiconductor integrated circuit chip has antifouling, hydrophobic and oleophobic properties, It is especially suitable for semiconductor fingerprint sensing chips, such as capacitive, electric field, thermal induction or other possible sensing methods, to prevent user finger dirt and fingerprint residue, and improve the quality of fingerprint reading and identification . The material used in the present invention is a synthetic resin with a nanometer surface structure, and its advantage is that the nanometer surface structure has a lotus effect, which can repel oil, water and dirt. Moreover, the hardness and wear resistance of the synthetic resin are very good, and the surface of the chip is not easily scratched. And because no halogen compound is used, the present invention also complies with today's environmental protection requirements.

Description of drawings

FIG. 1 shows a schematic diagram of a surface treatment method for a semiconductor integrated circuit chip according to a preferred embodiment of the present invention.

FIG. 2 shows an application embodiment of the semiconductor integrated circuit chip of FIG. 1 .

FIG. 3 shows a schematic diagram of a fingerprint image obtained by using the semiconductor integrated circuit chip of FIG. 2 .

FIG. 4 shows another application embodiment of the semiconductor integrated circuit chip of FIG. 1 .

FIG. 5 shows a schematic diagram of combining multiple segmented fingerprint images obtained by the semiconductor integrated circuit chip of FIG. 4 into a fingerprint image.

Description of main component symbols

10... Integrated circuit chip body

11... surface

12...Chip-type fingerprint sensor

13... Electrostatic discharge metal mesh structure

20...Nano surface structure resin protective film

Detailed ways

The present invention relates to a semiconductor integrated circuit chip with a nano-surface structure resin protective film and a method for forming the same, in particular to a method for forming a nano-surface structured resin protective film capable of preventing the semiconductor integrated circuit chip from being disturbed by the outside and using the same A semiconductor integrated circuit chip formed by the method.

Traditional resins do not have hydrophobic and oleophobic properties, the main reason being that the molecular structure is basically a hydrocarbon structure. In order to solve this problem, the method adopted by the present invention is to dope metal nanoparticles, ceramic nanoparticles or polymer nanoparticles in the resin material, so that the synthesized resin material is baked and solidified at a high temperature (such as 150° C.) Nano-rough surface, or the same rough surface can be formed by using the principle of high-temperature solidification phase change, which has the same characteristics as the surface of lotus or lotus leaf. This characteristic can be called the lotus effect (lotus effect), which reduces the The surface energy is increased, and thus the hydrophobic and oleophobic properties are improved. Combined with the characteristics of resin materials and surface nanostructures, it can be called nano-resin. The main reason for choosing resin is its wear resistance and high hardness. [Compared with other polymer materials such as polyimide] , quite suitable for application to the surface of an object that needs to be rubbed, such as the surface protection of a sliding fingerprint sensor chip that is mainly used in the present invention.

A method of forming a semiconductor integrated circuit chip having a nano surface structure resin protective film of the present invention will be described below. Referring to FIGS. 1 and 2 , the method for forming the protective film of the semiconductor integrated circuit chip includes the following steps.

Firstly, an integrated circuit chip body 10 is provided, and each integrated circuit chip body 10 has at least one exposed surface 11 . When the present invention is applied to a chip-type fingerprint sensor, as shown in FIG. 1, its integrated circuit chip body 10 further has a plurality of fingerprint sensing elements 12 for sensing a whole or part of a fingerprint of a finger, and The IC chip body 10 has only one exposed surface 11 . The surface 11 of the integrated circuit chip body 10 is made of dielectric materials such as silicon oxide or silicon nitride, or partially exposed dielectric materials and partially exposed metal materials such as aluminum and gold. In this embodiment, the exposed The metal material is an electrostatic discharge metal mesh structure 13 to discharge the electrostatic charge of the approaching fingers, and the electrostatic discharge metal mesh structure 13 is covered by the nano surface structure resin protective film 20, or protected from the nano surface structure resin The membrane 20 is exposed.

Then, a synthetic resin containing a plurality of nanoparticles and a resin material is applied to the at least on a surface 11 .

Then, under the appropriate environment setting, bake the synthetic resin to make it solidify, and form a nano surface structure resin protective film with lotus effect (lotus effect) to protect the integrated circuit chip body from external interference. Since the manufacturing thickness can be determined by manufacturing parameters, such as the rotational speed setting of the spin coating, the optimum thickness is between 0.3 and 10 microns.

Therefore, the semiconductor integrated circuit chip formed according to the above method includes an integrated circuit chip body 10 and a nanometer surface structure resin protection film 20 . The integrated circuit chip body 10 has at least one surface 11 . Each of the nano surface structure resin protection films 20 forms the cured nano surface structure resin protection film on the at least one surface 11 by using a plurality of nanoparticles and a synthetic resin of a resin material.

Since the thickness of the nano surface structure resin protective film can be controlled, it is also possible to planarize the uneven surface of the original chip to improve the above-mentioned shortcomings of the prior art.

FIG. 2 shows an application example of the semiconductor integrated circuit chip of FIG. 1 . As shown in FIG. 2 , the integrated circuit chip body 10 is used to sense a fingerprint image of a finger 50 resting thereon, as shown in FIG. 3 .

FIG. 4 shows another application example of the semiconductor integrated circuit chip of FIG. 1 . As shown in FIG. 4 , the integrated circuit chip body 10 is used to sense a plurality of fragmented fingerprint images of a finger 50 sliding through it, for subsequent image processing to form a fingerprint image, as shown in FIG. 5 .

The specific embodiments proposed in the detailed description of the preferred embodiments are only used to facilitate the description of the technical content of the present invention, rather than restricting the present invention to the above-mentioned embodiments in a narrow sense, without departing from the spirit and scope of rights of the present invention Circumstances, the implementation of various changes all belong to the scope of the present invention.

Claims (15)

1. A semiconductor integrated circuit chip, characterized in that it comprises: an integrated circuit chip body having at least one surface; and A nano surface structure resin protection film formed on the at least one surface, the nano surface structure resin protection film contains a plurality of nanoparticles and a resin material, and is used to protect the integrated circuit chip body from external interference . 2 . The semiconductor integrated circuit chip as claimed in claim 1 , wherein the thickness of the nano surface structured resin protective film is between 0.3 and 10 microns. 3 . 3. The semiconductor integrated circuit chip according to claim 1, wherein the integrated circuit chip body further has a plurality of fingerprint sensing elements for sensing a whole or part of a fingerprint of a finger. 4. The semiconductor integrated circuit chip as claimed in claim 1, wherein the integrated circuit chip body is used for sensing a plurality of segmental fingerprint images of a finger sliding therethrough. 5. The semiconductor integrated circuit chip as claimed in claim 1, wherein the integrated circuit chip body is used for sensing a fingerprint image of a finger resting thereon. 6. The semiconductor integrated circuit chip as claimed in claim 1, wherein the at least one surface is composed of silicon oxide or silicon nitride. 7. The semiconductor integrated circuit chip as claimed in claim 1, wherein the integrated circuit chip body further has an electrostatic discharge metal mesh structure to discharge electrostatic charges. 8 . The semiconductor integrated circuit chip as claimed in claim 7 , wherein the electrostatic discharge metal mesh structure is exposed from the nano surface structure resin protective film. 9. A method for forming a semiconductor integrated circuit chip as claimed in claim 1, comprising the following steps: providing an integrated circuit chip body having at least one exposed surface; coating a synthetic resin comprising nanoparticles and a resin material on the at least one surface of the integrated circuit chip body; and Under a proper environment setting, the synthetic resin is baked to be solidified, and a resin protective film with a nanometer surface structure having a lotus flower effect is formed to protect the integrated circuit chip body from external interference. 10 . The method for forming a semiconductor integrated circuit chip according to claim 9 , wherein the thickness of the nano-structured resin protective film is between 0.3 and 10 microns. 11 . 11. The method for forming a semiconductor integrated circuit chip as claimed in claim 9, wherein the step of coating the synthetic resin is achieved by dipping, spin coating or spray coating. 12. The method for forming a semiconductor integrated circuit chip as claimed in claim 9, wherein the integrated circuit chip body further has a plurality of fingerprint sensing elements for sensing a fingerprint of a finger. 13. The method of forming a semiconductor integrated circuit chip as claimed in claim 9, wherein the integrated circuit chip body is used to sense a plurality of fragmented fingerprint images of a finger sliding through it. 14. The method of forming a semiconductor integrated circuit chip according to claim 9, wherein the integrated circuit chip body is used to sense a fingerprint image of a finger resting thereon. 15. The method for forming a semiconductor integrated circuit chip as claimed in claim 9, further comprising the step of: planarizing the nano-structured resin protective film.

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