CN101046624A - Pattern defect detection device, pattern defect detection method and manufacturing method for photomask - Google Patents
Pattern defect detection device, pattern defect detection method and manufacturing method for photomask Download PDFInfo
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- CN101046624A CN101046624A CNA2007100890910A CN200710089091A CN101046624A CN 101046624 A CN101046624 A CN 101046624A CN A2007100890910 A CNA2007100890910 A CN A2007100890910A CN 200710089091 A CN200710089091 A CN 200710089091A CN 101046624 A CN101046624 A CN 101046624A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706843—Metrology apparatus
- G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
A pattern fault inspection device (10) is provided, inspecting faults generated on repeated patterns of a photomask (50) having the repeated patterns composed by regularly arraying unit patterns on a surface, the pattern fault inspection device (10) is provided with: a light source device (12) which irradiates lights to a dividing inspection region (58) of the photomask (50) in a desired incident angle; an object carrying table having a support face for supporting the photomask (50); an observation device (13) receiving n-times diffraction lights of the repeated patterns from the photomask; a rotation device (16) which makes a collimation lens (19) of the light source device be rotated in a predetermined angle in a plane parrallel with the supporting face of the object carrying table in order to irradiates lights to the photomask from different directions.
Description
Technical field
The present invention relates to pattern defect detection device, the pattern defect detection method that the defective of tested repeat patterns of having a medical check-up is checked and implement these defect inspections and make the manufacture method of the photomask of photomask.
Background technology
All the time, as tested equipment of having a medical check-up or be used for making the photomask of this equipment, need check the defective of the pattern that forms from the teeth outwards.The defective of this pattern is included in has the mistake of expecting the outer Different Rule that produces on the regularly arranged pattern.They also are called as uneven defective, and are former thereby produce because of some in manufacturing process etc.
Especially, in display device, show inequality, thereby have the trouble of equipment performance decline if exist described defective then to produce.When making this display device, in the employed photomask,, therefore there is the trouble of improvement of display devices decline if the pattern generating defective of photomask then is transferred on the pattern of display device owing to this defective.
All the time, defective in the pattern of described such display device or the pattern of photomask is following defective, promptly, because fine usually mischief rule is arranged, therefore in the shape inspection of separately pattern, in most cases can't detect, but when observing, show the state different with other parts as regional integration.Therefore, defect inspection is mainly by implementing based on visual visual examinations such as skew ray inspection.
But this visual examination exists check result because of the problem that the operator produces deviation, therefore expects the robotization of flaw detection apparatus.
As making visual skew ray check automation equipment, one of them for example is the macro inspection apparatus of semiconductor wafer.For example open in the flat 9-329555 communique (patent documentation 1) the spy and disclose a kind of device, it has: light source, the light of its periodic structure (repeat patterns) irradiation expectation wavelength on semiconductor wafer; Camera, it accepts the diffraction light from substrate surface; Testing agency, it is used for detecting defective by the captured view data of this camera and flawless reference data are compared.This macro inspection apparatus is accommodated in the whole face of wafer in the single visual field and checks the structural surface imperfection of the semiconductor wafer that the following development/etching/stripping process that changes defocusing of being caused, wafer that biasing because of focus, wafer upper-lower position are present in wafer because of impurity (particle) causes.
So, when use is checked the defective of this repeat patterns from the diffraction light of the repeat patterns of semiconductor wafer, described semiconductor wafer is rotated in the carrying plane of this semiconductor wafer of supporting.This be because, the shape that constitutes the unit cell pattern of repeat patterns is not simple rectilinear form, has 2 dimension shapes sometimes, therefore, as mentioned above by making semiconductor wafer rotation from different directions to the repeat patterns irradiates light, thereby check the defective of this repeat patterns well.
Tested in the patent documentation 1 have a medical check-up to as if semiconductor wafer, the size of this semiconductor wafer is diameter 200mm, the diameter maximum is about 300mm.And, in this patent documentation 1 described flaw detection apparatus, as shown in Figure 7, in the single visual field 104 of camera, check this semiconductor wafer 100 whole, semiconductor wafer 100 in the consistent mode of the rotation center 102 of its center and objective table 101 by these objective table 101 supportings and rotate.Thereby, the size of the objective table 101 of support semi-conductor wafers 100 be set at the size of semiconductor wafer 100 about equally.
In addition, in the photomask of display device such as liquid crystal panel or this liquid crystal panel manufacturing usefulness, also exist to have the structure that surpasses 1m on one side even surpass the large substrate of 2m.So explanation utilizes flaw detection apparatus inspection shown in Figure 7 to have the situation of the photomask of large substrate with reference to Fig. 8.At this moment, the single visual field 104 of camera is compared obviously little with large-scale substrate 103 as shown in Figure 8, therefore, when adopting patent documentation 1 described flaw detection apparatus to check, there is following variety of issue to the defective of the repeat patterns in the large substrate 103.
At first, because whole of can't under single visual field, check described such large substrate 103, therefore, the inspection area of large substrate 103 need be divided into single visual field 104 is a plurality of inspection areas 105 of cutting apart of unit, then, make objective table 101 rotations according to the defect inspection of respectively cutting apart in the inspection area 105, thereby check the existing defective of repeat patterns.
But, at this moment, when in the cutting apart inspection area 105 and check defectives of the end that is arranged in large substrate 103, the diagonal line 107 that rotating range 106 when making these large substrate 103 rotations becomes with this large substrate 103 is the circle of radius of turn, thereby objective table 101 need form and this rotating range 106 size about equally.
And then, because the big large substrate 103 of objective table 101 taking the weight ofs, therefore, weight bias in this objective table 101.Thereby, thereby bring dysgenic mode supporting substrates and the objective table rotation is driven checking precision not make large substrate 103 produce deflection, be complicated and difficult on equipment mechanism.
In addition, when making large substrate 103 rotations and do not make shooting cut apart the camera rotation of inspection area 105, shown in Fig. 9 (A), the inspection area 105 of cutting apart of cutting apart the inspection area of large substrate 103 for example needs 19, thereby the supervision time is long.At this moment,, shown in Fig. 9 (B), rotate by Flame Image Process and to be adapted to regular position by the image of respectively cutting apart inspection area 105 of camera, but, because the number of cutting apart inspection area 105 is many, so Flame Image Process needs the time, and this also is to cause a long reason of supervision time.
Summary of the invention
The present invention realizes in view of described situation just, its purpose is to provide a kind of can detect the defective that produces on the repeat patterns tested surface of having a medical check-up, that be made of the unit cell pattern of complicated shape well, and can make the manufacture method of the pattern defect detection device, pattern defect detection method and the photomask that comprise that the apparatus structure that supports tested objective table of having a medical check-up is oversimplified.
In addition, it is a kind of when checking cutting apart tested inspection area of having a medical check-up that other purpose of the present invention is to provide, the number of cutting apart the inspection area is minimized, thereby can shorten the manufacture method of pattern defect detection device, pattern defect detection method and photomask of the supervision time of the defective that produces on the tested repeat patterns of having a medical check-up.
First aspect present invention provides a kind of pattern defect detection device, and its look-up table mask is equipped with the defective that produces on the tested described repeat patterns of having a medical check-up of the regularly arranged and repeat patterns that constitutes of unit cell pattern, it is characterized in that having:
Light source mechanism, its with the expectation incident angle to described tested inspection area irradiates light of having a medical check-up;
Objective table, it possesses the described tested carrying plane of having a medical check-up of supporting;
Observation element, it accepts the diffraction light from described tested described repeat patterns of having a medical check-up;
Travel mechanism, its for from different directions to the described tested irradiates light of having a medical check-up, perhaps/and accept from described tested diffraction light of having a medical check-up from different direction, and make described light source mechanism and described observation element one of at least move predetermined angular relative to described objective table.
The pattern defect detection device of second aspect present invention on the basis of first aspect present invention, is characterized in that, described travel mechanism makes one of at least mobile predetermined angular in the face parallel with the carrying plane of objective table of light source mechanism and observation element.
The pattern defect detection device of third aspect present invention, on the basis of second aspect present invention, it is characterized in that described travel mechanism has rotating mechanism, what this rotating mechanism made light source mechanism and observation element one of at least rotates predetermined angular in the face parallel with the carrying plane of objective table.
The pattern defect detection device of fourth aspect present invention, on the basis of third aspect present invention, it is characterized in that, carrying plane at described relatively objective table vertically or with the opposed position configuration of predetermined angular has observation element, described relatively carrying plane obliquely the position configuration of irradiates light light source mechanism is arranged, described rotating mechanism makes described light source mechanism rotate predetermined angular in the face parallel with described carrying plane.
Fifth aspect present invention provides a kind of pattern defect detection device, and its look-up table mask is equipped with the defective that produces on the tested described repeat patterns of having a medical check-up of the regularly arranged and repeat patterns that constitutes of unit cell pattern, it is characterized in that having:
Light source mechanism, its with the expectation incident angle to described tested inspection area irradiates light of having a medical check-up;
Objective table, it possesses the described tested carrying plane of having a medical check-up of supporting;
Observation element, it accepts the diffraction light from described tested described repeat patterns of having a medical check-up,
For from different directions to the described tested irradiates light of having a medical check-up, perhaps accept from described tested diffraction light of having a medical check-up from different direction, described relatively objective table be provided with a plurality of described light source mechanisms and described observation element one of at least.
The pattern defect detection device of sixth aspect present invention on the basis of fifth aspect present invention, is characterized in that, in the face parallel, be provided with the carrying plane of objective table a plurality of described light source mechanisms and described observation element one of at least.
The pattern defect detection device of seventh aspect present invention on the basis of fifth aspect present invention, is characterized in that, described observation element one of opposed position configuration on the vertical direction of the carrying plane of relative objective table,
Described light source mechanism disposes a plurality of light sources and constitutes in the face parallel with described carrying plane.
The pattern defect detection device of eighth aspect present invention, aspect the present invention first to seven on the basis of either side, it is characterized in that described observation element accepts from absolute value in the tested diffraction light of having a medical check-up than the diffraction light of 0 big number of times.
Ninth aspect present invention provides a kind of pattern defect detection method, and it is regularly arranged and tested the having a medical check-up repeat patterns that constitutes is bearing on the carrying plane of objective table that the surface is possessed unit cell pattern,
From light source mechanism in the hope of the incident angle of hoping to the described tested inspection area irradiates light of having a medical check-up that is bearing on this objective table,
Accept because of the diffraction light of this irradiation by observation element from described tested described repeat patterns generation of having a medical check-up,
From the diffraction light of this acceptance, detect the diffraction light that defective that described repeat patterns produces causes, check this defective thus,
Described pattern defect detection method is characterised in that,
For from a plurality of different directions to the described tested irradiates light of having a medical check-up, perhaps accept diffraction light from a plurality of different directions, and with described light source mechanism and described observation element be configured in one of at least a plurality of positions in the face parallel with the carrying plane of described objective table, check described defective thus.
The pattern defect detection device of tenth aspect present invention, on the basis of ninth aspect present invention, it is characterized in that what make described light source mechanism and described observation element one of at least rotates predetermined angular in the face parallel with the carrying plane of objective table, and be configured in a plurality of positions in this face.
The present invention the tenth pattern defect detection device on the one hand, on the basis of ninth aspect present invention, it is characterized in that, being provided with in the face parallel with the carrying plane of objective table one of at least of described light source mechanism and described observation element is a plurality of, and be configured in a plurality of positions in this face.
The pattern defect detection device of the present invention the 12 aspect on the basis of ninth aspect present invention, is characterized in that, observation element accepts from absolute value in the described tested diffraction light of having a medical check-up than the diffraction light of 0 big number of times.
The present invention the 13 aspect provides a kind of manufacture method of photomask, forms the photomask pattern and make photomask on substrate, it is characterized in that, comprises the operation of carrying out the described defect inspection of either side in ninth aspect present invention to ten two aspects.
According to the present invention first, second, third and fourth, nine, ten, 11 or 13 aspects, comprise following mode: for from different directions to the tested irradiates light of having a medical check-up, perhaps/and accept from tested diffraction light of having a medical check-up from different direction, and make one of at least relative objective table of light source mechanism and observation element rotate predetermined angular.Therefore, be complicated shape even constitute the unit cell pattern of tested lip-deep repeat patterns of having a medical check-up, also can utilize diffraction light to detect the defective that produces on this repeat patterns well.
In addition, for from different directions to the tested irradiates light of having a medical check-up, perhaps/and and accept from tested diffraction light of having a medical check-up from different direction, make one of at least relative objective table rotation predetermined angular of light source mechanism and observation element, and do not need to make the tested objective table of having a medical check-up of supporting to rotate.Therefore, even under the situation of tested one side of having a medical check-up above the large substrate of 1m, also can avoid the maximization of objective table, can avoid rotating the problem that drives on large-scale and the tested device of having a medical check-up that weight is big etc., thereby the apparatus structure that comprises objective table is oversimplified.
Under the situation that makes light source mechanism relative objective table rotation predetermined angular, tested inspection area of having a medical check-up cut apart and when checking, can set along the limit of inspection area and cut apart the inspection area, therefore, the number of cutting apart the inspection area is minimized.Consequently, can shorten the supervision time of the defective that produces on the tested repeat patterns of having a medical check-up.
The 5th, six, seven or nine aspects according to the present invention, comprise following mode: for from different directions to the tested irradiates light of having a medical check-up, perhaps accept from tested diffraction light of having a medical check-up, and be provided with one of at least relative objective table of light source mechanism and observation element a plurality of from different direction.Therefore, be complicated shape even constitute the unit cell pattern of tested lip-deep repeat patterns of having a medical check-up, also can utilize diffraction light to detect the defective that produces on this repeat patterns well.
In addition, for from different directions to the tested irradiates light of having a medical check-up, perhaps/and and accept from tested diffraction light of having a medical check-up from different direction, one of at least relative objective table of light source mechanism and observation element is provided with a plurality of, and do not need to make the tested objective table of having a medical check-up of supporting to rotate.Therefore, even it is long above under the large-scale situation of 1m at tested benchmark of having a medical check-up, also can avoid the maximization of objective table, can avoid supporting and rotate and drive large-scale and tested situation of having a medical check-up that weight is big etc., thereby the apparatus structure that comprises objective table is oversimplified.
The relative objective table of light source mechanism is being provided with under a plurality of situations, tested inspection area of having a medical check-up is cut apart and when checking, can be being set along the limit of inspection area and cut apart the inspection area, therefore, the number of cutting apart the inspection area is being minimized.Consequently, can shorten the supervision time of the defective that produces on the tested repeat patterns of having a medical check-up.
The the 8th or the 12 aspect according to the present invention, observation element's acceptance comprises the diffraction light of the information of the defective that produces on the tested repeat patterns of having a medical check-up, and can check described defective well thus.
Description of drawings
Fig. 1 is the approximate three-dimensional map of first embodiment of expression pattern defect detection device of the present invention;
Fig. 2 is the summary side elevation of the pattern defect detection device of presentation graphs 1;
Fig. 3 be used for key diagram 1 and Fig. 2 photomask repeat patterns and from the figure of diffraction light of this repeat patterns etc.;
Fig. 4 is illustrated in the defective that produces on the repeat patterns of photomask of Fig. 1 to Fig. 3, is the skeleton diagram of the defective of denotation coordination change system (A) and (B), is the skeleton diagram of the defective of expression dimensional variations system (C) and (D);
Fig. 5 is the inspection area of the expression photomask that is used to cut apart Fig. 1 to Fig. 3 and the vertical view of the photomask of cutting apart the inspection area checked;
Fig. 6 is the approximate three-dimensional map of second embodiment of expression pattern defect detection device of the present invention;
Fig. 7 together represents the camera coverage of existing pattern defect detection device and as the vertical view of tested semiconductor wafer of having a medical check-up;
Fig. 8 is the vertical view of the situation of expression when using described existing flaw detection apparatus to check the defective of large substrate;
Fig. 9 is the vertical view of the large substrate of cutting apart inspection area of expression when cutting apart the defective of large substrate and using described existing flaw detection apparatus to check.
Embodiment
Below, be used to implement best mode of the present invention with reference to description of drawings.
[A] first embodiment (Fig. 1 to Fig. 5)
Fig. 1 is the approximate three-dimensional map of first embodiment of expression pattern defect detection device of the present invention.Fig. 2 is the summary side elevation of the pattern defect detection device of presentation graphs 1.
The pattern defect detection device 10 of first embodiment of Figure 1 and Figure 2 is used to check the defective that the repeat patterns 51 (with reference to Fig. 2) that forms on the surface as the tested photomask of having a medical check-up 50 is produced.That is, illustrated pattern defect detection device 10 have objective table 11 (Fig. 2), as the light supply apparatus 12 of light source mechanism, as the finder 13 of observation element, light receiving optical system 14 that this finder 13 is possessed with as the whirligig 16 (Fig. 1) of rotating mechanism.
At this, photomask 50 for example is the exposure mask that adopts when making display device such as liquid crystal indicator (especially Flat Panel Display:FPD), plasm display device, EL display device, LED display device, DMD display device.
Then, illustrate as the tested photomask of having a medical check-up 50.The photomask that photomask 50 is normally following: transparency carriers such as synthetic quartz glass substrate are provided with photomasks such as chromium film, and local remove this photomask so that it becomes the pattern of expectation, thereby form the photomask pattern.With regard to checked photomask 50 in the present embodiment, unit cell pattern 53 has regularly arranged repeat patterns 51 on its surface as shown in Figure 2.
As shown in Figure 5, photomask 50 is to possess mutually orthogonal limit L1, L2, and the large-scale photomask that surpasses one of at least 1m of limit L1, L2, in addition, as shown in Figure 2, spacing (pel spacing) d of the repeat patterns of this photomask 50 (pattern of pixels) 51 for example is about 50～1000 μ m.
Usually, as the manufacture method of this photomask 50, at first, on transparency carrier, form photomask, and on this photomask, form resist film.Then, describe the laser beam of machine and implement to describe the pattern of exposure regulation to this resist film irradiation.Then, optionally remove drawing section and non-drawing section and form the resist pattern.Then, be that mask comes the etching photomask with the resist pattern, on this photomask, form repeat patterns (photomask pattern) 51, last, remove remaining resist, thereby make photomask 50.
In described manufacturing process, when resist film directly being implemented to describe by the scanning of laser beam, scan scanning accuracy, beam footpath or scan the tie point that width produces because of depending on sometimes, each is described the generation of unit period ground and describes the bad mistake that causes, and this becomes the reason that the described defective on the repeat patterns 51 produces.In addition, produce pattern defect because of a variety of causes sometimes with systematicness.
Fig. 4 represents an example of this defective.In this Fig. 4, symbol 54 expression defect areas.Fig. 4 (A) is expressed as follows the defective of generation, that is since based on beam describe produce position deviation on the tie point, the interval of the unit cell pattern 53 of repeat patterns 51 in the horizontal the part produce difference, cause defective thus.Fig. 4 (B) is expressed as follows the defective of generation, that is, same since based on beam describe produce position deviation on the tie point, depart from the position of the unit cell pattern 53 of repeat patterns 51 other unit cell pattern 53 relatively, causes defective thus.Defective shown in these Fig. 4 (A) reach (B) is called the defective of coordinate position change system.
In addition, Fig. 4 (C) and (D) expression is owing to describe the deviation etc. of the intensity of beam of machine, unit cell pattern 53 parts of repeat patterns 51 attenuate or the defective of chap, and these defectives are called the defective of dimensional variations system.
In addition, the pattern defect detection device 10 employed described objective tables 11 (Fig. 2) of Figure 1 and Figure 2 are the platforms that possesses the carrying plane of supporting photomask 50.This objective table 11 is by forming the X-Y objective table that can move along directions X and Y direction, and the inspection area 58 (aftermentioned) of respectively cutting apart of photomask 50 can be set in assigned position.
This light supply apparatus 12 passes through photoconductive tubes 18 to collimation lens 19 direct light from the apparatus main body 17 of taking in described light source, and is configured in the below of objective table 11.This light supply apparatus 12 from oblique below with the surface, regularly arranged repeat patterns 51 irradiates lights that unit cell pattern 53 is arranged of the photomask 50 of incident angle θ i on the carrying plane that is bearing in objective table 11 of expectation.
Described finder 13 is accepted to have seen through in the diffraction of light light of photomask 50 absolute value than the diffraction light of 0 big number of times.At this, between the irradiates light (incident light) and diffraction light of photomask 50 irradiations that possess repeat patterns 51 from repeat patterns 51, as shown in Figures 2 and 3, when the spacing of establishing repeat patterns 51 be d, incident angle be θ i, number of times be the angle of diffraction of n the diffraction light of n be θ n, when the incident light wavelength is λ, following relational expression (1) is set up.
d(sinθn±sinθi)＝nλ……(1)
Because the defect information that 0 diffraction light (direct sunshine) is fine is relatively extremely few, so absolute value more comprises fine defect information relatively than the diffraction light of 0 big number of times with manying, therefore, in order to obtain microscopic defect information, as mentioned above, need accept the diffraction light (n diffraction light) of the absolute value number of times wideer by finder 13 than 0 diffraction.In addition, the diffraction frequency n is determined based on the spacing d of repeat patterns 51.Thereby according to formula (1), for the relative spacing d of the regulation of repeat patterns 51, finder 13 is accepted n diffraction light of regulation, needs suitably change and wavelength X, the incident angle θ i of setting n diffraction direction of light (n diffraction angle n) or incident light.Also have, n diffraction angle n among Fig. 2 and Fig. 3 represents the angle of diffraction of-1 diffraction light.
In addition, finder 13 uses cameras such as CCD camera as camera head, the image that this CCD camera can be read in is presented in the display frame thus, in addition, this image can be resolved by resolver (not shown) as view data.This CCD camera is a regional camera (area camera) of taking 2 dimension images.In addition, also can on this finder 13, equip eyepiece.
The view data that is obtained by finder 13 sends to not shown resolver.This resolver is by being provided with threshold value to the view data self from finder 13, make photomask 50 repeat patterns 51 remarkableization of defective and detect.
In addition, the unit cell pattern 53 of the repeat patterns 51 of Fig. 2 and photomask 50 shown in Figure 3 is not simple rectilinear form sometimes, but 2 dimension complicated shapes.Under these circumstances, need be in the face parallel shine light once more, and accept diffraction light, check the defective of repeat patterns 51 to repeat patterns 51 irradiations of photomask 50 from the position of departing from predetermined angular with this photomask 50.
Therefore, in the pattern defect detection device 10 of present embodiment, for from photomask 50 irradiates lights of different directions on objective table 11, as shown in Figure 1, be provided with described whirligig 16, this whirligig 16 makes the collimation lens 19 of light supply apparatus 12 rotate predetermined angular in the face parallel with the carrying plane of objective table 11.
In addition, photomask 50 is as Fig. 1 and shown in Figure 5, is the large substrate that surpasses one of at least 1m of mutually orthogonal limit L1, L2, therefore, in defect inspection, need cut apart the inspection area 57 of photomask 50, to respectively cutting apart inspection area 58 irradiates lights, and accept diffraction light and check defective.These are cut apart inspection area 58 and are arranged side by side along mutually orthogonal limit L1, the L2 of photomask 50.Described objective table 11 makes photomask 50 move along directions X, Y direction so that the photomask 50 that is supported respectively cut apart inspection area 58 be positioned at finder 13 under (the optical axis consistent location of respectively cutting apart the object lens of the middle position of inspection area 58 and light receiving optical system 14).
Described whirligig 16 constitutes: for example with turning axle 20 driving shaft is set as one man, extends from this driving shaft the arm that an end is provided with collimation lens 19 is set, can utilize motor etc. to make driving shaft rotation predetermined angular.Also have, symbol 23 expressions among Fig. 1 come the optical axis of the incident light of self-focus lens 19.
When adopting described such pattern defect detection device 10 to check that the repeat patterns 51 (photomask) of photomask 50 goes up the defective that produces, at first, photomask 50 is bearing on the carrying plane of objective table 11, by this objective table 11 photomask 50 is moved along directions X and Y direction, thus with this photomask 50 cut apart arbitrarily defect area 58 be set in finder 13 under.
Then, from the collimation lens 19 of light supply apparatus 12 the described incident angle θ i irradiates light of cutting apart inspection area 58 with expectation arbitrarily to photomask 50, accept to obtain the view data that this cuts apart inspection area 58 by finder 13 from the diffraction light (n diffraction light) of absolute value in the diffraction light of photomask 50 than 0 big number of times.According to this view data, resolver is checked the defective of this repeat patterns of cutting apart inspection area 58 51.
Then, make the collimation lens 19 of light supply apparatus 12 in the face parallel, rotate predetermined angular by whirligig 16 with the carrying plane of objective table 11, in this position equally with the expectation incident angle θ i to described inspection area 58 irradiates lights of cutting apart arbitrarily.Finder 13 accept this moment from the absolute value of photomask 50 diffraction light (n diffraction light) than 0 big number of times, resolver is checked the defective of this repeat patterns of cutting apart inspection area 58 51 based on the view data from finder 13.
Cut apart inspection area 58 arbitrarily for this, after the defect inspection of the repeat patterns of implementing implementing repeatedly described such direction of illumination to change 51 to light, make objective table 11 actions, to adjacency cut apart inspection area 58, implement repeatedly that direction of illumination to light changes and the defect inspection of the repeat patterns 51 implemented.To all inspection areas 58 of cutting apart of photomask 50, implement repeatedly that direction of illumination to light changes and the defect inspection of this photomask 50 is finished in the defect inspection of the repeat patterns 51 implemented.It is carried out as a ring of the manufacturing process of photomask 50.
Thereby, according to described embodiment, play following effect (1)～(4).
(1) for from the collimation lens 19 of light supply apparatus 12 to photomask 50 respectively cut apart inspection area 58 with different a plurality of direction irradiates lights, whirligig 16 makes the collimation lens 19 of light supply apparatus 12 rotate predetermined angular in the face parallel with the carrying plane of objective table 11.Therefore, are 2 complicated dimension shapes even constitute the unit cell pattern 53 of the lip-deep repeat patterns 51 of photomask 50, also can utilize diffraction light (n diffraction light) to check the defective that on this repeat patterns 51, produces well than 0 big number of times.
(2) in order respectively to cut apart inspection area 58 with different a plurality of direction irradiates lights to photomask 50 from the collimation lens 19 of light supply apparatus 12, make the collimation lens 19 of light supply apparatus 12 in the face parallel, rotate predetermined angular, and do not make objective table 11 rotations of supporting photomask 50 with the carrying plane of objective table 11.Therefore, even under the situation of the large substrate that surpasses one of at least 1m of the limit of photomask 50 L1, L2, also can avoid the maximization of objective table 11, in addition, the complex rotation that does not need to support the objective table 11 of large-scale and the photomask 50 that weight is big drives, and the equipment mechanism that comprises objective table 11 is oversimplified.
(3) owing to cut apart the inspection area 57 of photomask 50 and when each is cut apart inspection area 58 and check the defective of repeat patterns 51 of photomasks 50, can be along the inspection area 57 limit set and respectively cut apart inspection area 58, therefore, these numbers of cutting apart inspection area 58 are minimized.For example, in objective table 101 rotations as made supporting large substrate 103 (Fig. 8) in the past, and do not make under the situation that camera and objective table 101 synchronously rotate, as shown in Figure 9, the inspection area 105 of cutting apart of cutting apart the inspection area of large substrate 103 for example needs 19, but as shown in Figure 5, in the present embodiment, can make and cut apart inspection area 58 and be promptly 15 of minimum numbers.Consequently, owing to can reduce the inspection number of times, therefore, can shorten the supervision time of the defective that produces on the repeat patterns 51 of photomask 50.
(4) because finder 13 acceptance comprise the diffraction light (n diffraction light) of 0 big number of times of ratio of the defect information that produces on the repeat patterns 51 of photomask 50, therefore can check described defective well.
[B] second embodiment (Fig. 6)
Fig. 6 is the approximate three-dimensional map of second embodiment of expression pattern defect detection device of the present invention.In this second embodiment, the identical symbol of part mark to identical with described first embodiment omits explanation.
In the pattern defect detection device 30 of present embodiment, the camera head of finder 13 (CCD camera etc.) is a line camera (line camera) of checking 1 dimension image.Thereby, the collimation lens 19 of light supply apparatus 12 and finder 13 be set to can with the directions X of shooting direction (for example Y direction) quadrature of line camera on scan.In addition, the inspection area 59 of cutting apart of cutting apart the repeat patterns 51 of photomask 50 is along the band shape of the directions X extension of photomask 50, is arranged side by side on the Y of photomask 50 direction.Thereby objective table 11 constitutes the photomask 50 that is supported is moved along described Y direction.
Thereby, when the defect inspection of the repeat patterns 51 of carrying out photomask 50 by this pattern defect detection device 30, make the photomask 50 that is bearing on the objective table 11 cut apart arbitrarily inspection area 59 be positioned at finder 13 under, afterwards from the collimation lens 19 of light supply apparatus 12 incident angle θ i irradiates light with expectation, collimation lens 19 and finder 13 are scanned along directions X, finder 13 is accepted diffraction light n time, according to its view data, resolver is checked the defective of this repeat patterns of cutting apart inspection area 59 51.
Then, make the collimation lens 19 and the finder 13 of light supply apparatus 12 return the origin-location, make collimation lens 19 rotate predetermined angular in the face parallel with the carrying plane of objective table 11 by whirligig 16, change comes the direction of illumination of the light of self-focus lens 19 to photomask 50 irradiations.Make collimation lens 19 and finder 13 along directions X scanning under this state, finder 13 is accepted diffraction light n time, according to its view data, checks the defective of this photomask of cutting apart inspection area 59 50.
Cut apart inspection area 59 arbitrarily for this, after the defect inspection of the repeat patterns 51 of implementing repeatedly as mentioned above direction of illumination to light to change and implementing, by objective table 11 photomask 50 is moved along the Y direction, to adjacency cut apart inspection area 59, implement repeatedly that direction of illumination to light changes and the defect inspection of the repeat patterns 51 implemented.To all inspection areas 59 of cutting apart of photomask 50, implement repeatedly that direction of illumination to light changes and the defect inspection of this photomask 50 is finished in the defect inspection of the repeat patterns 51 implemented.It is carried out as a ring of the manufacturing process of photomask 50.
Thereby, in the present embodiment, also play effect (1)～(4) identical effect with described embodiment.
More than, based on described embodiment the present invention has been described, but the present invention is not limited thereto.
For example, in described two embodiments, narrate finder 13 and accepted to have seen through the situation of the diffraction of light light of photomask 50, but also light supply apparatus 12 relative objective tables 11 can be configured in a side identical, the diffraction of light light that finder 13 is accepted by photomask 50 reflections with finder 13.And then finder 13 both can form the face side and observe from the pattern of photomask 50, also can observe from the substrate surface side as its inside.So, can suitably select the allocation position of finder 13.
In addition, also the collimation lens 19 of the light supply apparatus 12 in described two embodiments and the position that is provided with of finder 13 can be reversed.That is, the collimation lens 19 of light supply apparatus 12 is configured in the vertical position of carrying plane of relative objective table 11, finder 13 is configured in the position that the carrying plane of relative objective table 11 tilts, accept diffraction light n time by this finder 13.And, also can be under the effect of whirligig 16, make finder 13 rotate predetermined angular in the face parallel with the carrying plane of objective table 11, thus, finder 13 can be accepted n diffraction light from the repeat patterns 51 of photomask 50 from a plurality of different directions.
And then, also the finder 13 of described two embodiments can be configured in from the position of the vertical position deviation certain angle of the carrying plane of relative objective table 11, the position relation of the collimation lens 19 of this finder 13 and light supply apparatus 12 is remained finder 13 accept the state of n diffraction light, make finder 13, collimation lens 19 in the face parallel, rotate predetermined angular respectively with the carrying plane of objective table 11 from the repeat patterns 51 of photomask 50.Thus, the collimation lens 19 of light supply apparatus 12 can be from a plurality of different photomask 50 irradiates lights of direction on objective table 11, and finder 13 can be accepted n diffraction light from the photomask on the objective table 11 50 from a plurality of different directions.
In addition, in described two embodiments, narrated the situation that the collimation lens 19 of light supply apparatus 12 rotates in the face parallel with the carrying plane of objective table 11, but also a plurality of described collimation lenses 19 can be arranged on the arc track in the face parallel with the carrying plane of objective table 11, difference is irradiates light successively, from a plurality of different photomask 50 irradiates lights of direction on objective table 11.Perhaps, also can dispose the collimation lens 19 and the finder 13 of the light supply apparatus 12 in two embodiments on the contrary, a plurality of finders 13 are configured on the arc track in the face parallel with the carrying plane of objective table 11, and each finder 13 is accepted n diffraction light from the photomask on the objective table 11 50 from a plurality of different directions successively.Perhaps, also the collimation lens 19 of the light supply apparatus 12 in a plurality of described two embodiments can be configured on the arc track in the face parallel with the carrying plane of objective table 11 respectively with finder 13, each collimation lens 19 is from a plurality of different directions 50 irradiates lights of the photomask on objective table 11 successively, and each finder 13 is accepted n diffraction light from the photomask on the objective table 11 50 successively from a plurality of different directions.
Two embodiments are illustrated as described, to tested having a medical check-up is photomask 50, having used situation of the present invention when pattern defect detection device 10,30 inspection is used to make the defective that produces on the repeat patterns 51 of described photomask 50 of display device is illustrated, but it is tested situation of having a medical check-up that the present invention also goes for display device.At this moment, pattern defect detection device 10,30 of the present invention can check that the pattern of pixels (particularly, the repeat patterns of the thin film transistor (TFT) of display panels or counter substrate, color filter etc.) of the display surface that forms display device goes up the defective that produces.In addition, the situation that adopts the whirligig 16 that makes any one rotation in light supply apparatus 12 and the finder 13 only has been described, but, the present invention is not limited thereto, also can make one of at least mobile predetermined angular in the face parallel in light supply apparatus 12 and the finder 13 with the carrying plane of objective table, thus, from a plurality of directions to photomask 50 irradiates lights.
Claims (13)
1. pattern defect detection device, its look-up table mask are equipped with the defective that produces on the tested described repeat patterns of having a medical check-up of the regularly arranged and repeat patterns that constitutes of unit cell pattern, it is characterized in that having:
Light source mechanism, its with the expectation incident angle to described tested inspection area irradiates light of having a medical check-up;
Objective table, it possesses the described tested carrying plane of having a medical check-up of supporting;
Observation element, it accepts the diffraction light from described tested described repeat patterns of having a medical check-up;
Travel mechanism, its for from different directions to the described tested irradiates light of having a medical check-up, perhaps/and accept from described tested diffraction light of having a medical check-up from different direction, and make described light source mechanism and described observation element one of at least move predetermined angular relative to described objective table.
2. pattern defect detection device as claimed in claim 1 is characterized in that,
Described travel mechanism makes one of at least mobile predetermined angular in the face parallel with the carrying plane of objective table of light source mechanism and observation element.
3. pattern defect detection device as claimed in claim 2 is characterized in that,
Described travel mechanism has rotating mechanism, and what this rotating mechanism made light source mechanism and observation element one of at least rotates predetermined angular in the face parallel with the carrying plane of objective table.
4. pattern defect detection device as claimed in claim 3 is characterized in that,
Carrying plane at described relatively objective table vertically or with the opposed position configuration of predetermined angular has observation element, described relatively carrying plane obliquely the position configuration of irradiates light light source mechanism is arranged, described rotating mechanism makes described light source mechanism rotate predetermined angular in the face parallel with described carrying plane.
5. pattern defect detection device, its look-up table mask are equipped with the defective that produces on the tested described repeat patterns of having a medical check-up of the regularly arranged and repeat patterns that constitutes of unit cell pattern, it is characterized in that having:
Light source mechanism, its with the expectation incident angle to described tested inspection area irradiates light of having a medical check-up;
Objective table, it possesses the described tested carrying plane of having a medical check-up of supporting;
Observation element, it accepts the diffraction light from described tested described repeat patterns of having a medical check-up,
For from different directions to the described tested irradiates light of having a medical check-up, perhaps accept from described tested diffraction light of having a medical check-up from different direction, described relatively objective table be provided with a plurality of described light source mechanisms and described observation element one of at least.
6. pattern defect detection device as claimed in claim 5 is characterized in that,
In the face parallel, be provided with the carrying plane of objective table a plurality of described light source mechanisms and described observation element one of at least.
7. pattern defect detection device as claimed in claim 5 is characterized in that,
Described observation element one of opposed position configuration on the vertical direction of the carrying plane of relative objective table,
Described light source mechanism disposes a plurality of light sources and constitutes in the face parallel with described carrying plane.
8. as each described pattern defect detection device in the claim 1 to 7, it is characterized in that,
Described observation element accepts from absolute value in the tested diffraction light of having a medical check-up than the diffraction light of 0 big number of times.
9. pattern defect detection method, it is regularly arranged and tested the having a medical check-up repeat patterns that constitutes is bearing on the carrying plane of objective table that the surface is possessed unit cell pattern,
From light source mechanism in the hope of the incident angle of hoping to the described tested inspection area irradiates light of having a medical check-up that is bearing on this objective table,
Accept because of the diffraction light of this irradiation by observation element from described tested described repeat patterns generation of having a medical check-up,
From the diffraction light of this acceptance, detect the diffraction light that defective that described repeat patterns produces causes, check this defective thus,
Described pattern defect detection method is characterised in that,
For from a plurality of different directions to the described tested irradiates light of having a medical check-up, perhaps accept diffraction light from a plurality of different directions, and with described light source mechanism and described observation element be configured in one of at least a plurality of positions in the face parallel with the carrying plane of described objective table, check described defective thus.
10. pattern defect detection method as claimed in claim 9 is characterized in that,
What make described light source mechanism and described observation element one of at least rotates predetermined angular in the face parallel with the carrying plane of objective table, and is configured in a plurality of positions in this face.
11. pattern defect detection method as claimed in claim 9 is characterized in that,
Being provided with in the face parallel with the carrying plane of objective table one of at least of described light source mechanism and described observation element is a plurality of, and be configured in a plurality of positions in this face.
12. pattern defect detection method as claimed in claim 9 is characterized in that,
Observation element accepts from absolute value in the described tested diffraction light of having a medical check-up than the diffraction light of 0 big number of times.
13. the manufacture method of a photomask forms the photomask pattern and makes photomask on substrate, it is characterized in that,
The operation that comprises each described defect inspection in carry out claim 9 to 12.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006096756A JP4831607B2 (en) | 2006-03-31 | 2006-03-31 | Pattern defect inspection method and photomask manufacturing method |
| JP2006096756 | 2006-03-31 | ||
| JP2006-096756 | 2006-03-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101046624A true CN101046624A (en) | 2007-10-03 |
| CN101046624B CN101046624B (en) | 2011-11-02 |
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| CN2007100890910A Expired - Fee Related CN101046624B (en) | 2006-03-31 | 2007-03-29 | Pattern defect detection device, pattern defect detection method and manufacturing method for photomask |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4831607B2 (en) |
| KR (1) | KR20070098695A (en) |
| CN (1) | CN101046624B (en) |
| TW (1) | TW200736601A (en) |
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| CN101738400B (en) * | 2008-11-14 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | Method and device for judging repeated defects on surface of wafer |
| CN102495070A (en) * | 2011-12-09 | 2012-06-13 | 北京凌云光视数字图像技术有限公司 | System for detecting three-dimensional defects on surface of large-breadth adhesive label |
| CN102519968A (en) * | 2011-11-28 | 2012-06-27 | 上海华力微电子有限公司 | Defect detection device for mask plate |
| CN106471415A (en) * | 2014-04-30 | 2017-03-01 | 惠普发展公司，有限责任合伙企业 | Imaging device and method using the illumination based on diffraction |
| CN106783648A (en) * | 2016-12-28 | 2017-05-31 | 歌尔股份有限公司 | A kind of preparation method of LED display |
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| JP2009156687A (en) * | 2007-12-26 | 2009-07-16 | Hoya Corp | Defect inspection device of photomask, defect inspection method of photomask, and manufacturing method of photomask |
| JP5245482B2 (en) * | 2008-03-21 | 2013-07-24 | 株式会社ニコン | Substrate inspection apparatus and mask substrate manufacturing method |
| KR20100042924A (en) | 2008-10-17 | 2010-04-27 | 삼성전자주식회사 | System for monitoring hazes of photomask and method for monitoring thereof |
| JP2014035326A (en) | 2012-08-10 | 2014-02-24 | Toshiba Corp | Defect inspection device |
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| CN112557400A (en) * | 2020-11-30 | 2021-03-26 | 电子科技大学 | System and method for detecting surface defect contour of lens of satellite telescope |
| CN112557400B (en) * | 2020-11-30 | 2021-10-22 | 电子科技大学 | A system and method for detecting the surface defect contour of a satellite telescope lens |
| CN114267603A (en) * | 2021-12-06 | 2022-04-01 | 华虹半导体(无锡)有限公司 | About the detection method of repeating matrix pattern defects |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070098695A (en) | 2007-10-05 |
| TW200736601A (en) | 2007-10-01 |
| JP2007271425A (en) | 2007-10-18 |
| JP4831607B2 (en) | 2011-12-07 |
| CN101046624B (en) | 2011-11-02 |
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