CN101034144A - Full-automatic measurement device for magnetoelectric properties of magnetoelectric material and measuring method thereof - Google Patents
Full-automatic measurement device for magnetoelectric properties of magnetoelectric material and measuring method thereof Download PDFInfo
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Abstract
本发明属于磁电材料领域,具体涉及到利用虚拟多通道锁相放大原理来实现计算机控制的测量材料磁电性能的方法和装置。本发明将锁相放大器虚拟化,即计算机软件来实现锁相放大器的功能,利用虚拟的锁相放大器可以很方便的对任意多通道的信号进行锁相放大处理,从而不仅可以同时精确的动态测量dE和dH,改善了磁电性能测量精度,而且相比硬件锁相放大器工作频率上限得到大幅度提高,同时减少磁电测量设备的制造成本。本发明还结合外加直流偏置磁场的控制和测量进一步提高磁电测量设备的自动化程度,从而提高磁电测量精度和效率。
The invention belongs to the field of magnetoelectric materials, and in particular relates to a computer-controlled method and device for measuring the magnetoelectric properties of materials by utilizing the principle of virtual multi-channel phase-locked amplification. The present invention virtualizes the lock-in amplifier, that is, the computer software realizes the function of the lock-in amplifier, and utilizes the virtual lock-in amplifier to conveniently carry out lock-in amplification processing on any multi-channel signal, so that not only the simultaneous and accurate dynamic measurement The dE and dH improve the measurement accuracy of the magnetoelectric performance, and the upper limit of the operating frequency of the hardware lock-in amplifier is greatly improved, and at the same time, the manufacturing cost of the magnetoelectric measurement equipment is reduced. The invention also combines the control and measurement of the external DC bias magnetic field to further improve the automation degree of the magnetoelectric measurement equipment, thereby improving the magnetoelectric measurement accuracy and efficiency.
Description
技术领域technical field
本发明属于磁电材料领域,涉及磁电材料磁电性能的测量技术,具体涉及到利用虚拟多通道锁相放大原理实现的全计算机控制的测量磁电材料磁电性能的装置及其测量方法。The invention belongs to the field of magnetoelectric materials, and relates to a measurement technology of magnetoelectric properties of magnetoelectric materials, in particular to a fully computer-controlled device for measuring magnetoelectric properties of magnetoelectric materials and a measurement method thereof realized by using the principle of virtual multi-channel phase-locked amplification.
背景技术Background technique
磁电性能是指材料在外部磁场诱发的介电极化,或外电场诱发的磁化。通常所说的磁电性能在没有特别说明的情况下,都是指磁场诱导介电极化。磁电性能在许多高性能磁电功能元器件中具有广阔的应用前景,具体说来,它可应用于磁场探测、磁电能量互换、信息存储以及驱动等诸多领域中。而材料磁电性能的测量则是磁电材料研究开发和应用过程中最为关键的一个环节。表征磁电性能的指标常用的是磁电电压系数,定义为αME=dV/(tdH),其中dH为直流偏置磁场上叠加的交流微分磁场,dV为样品两端在微分磁场作用下产生的电压,t为样品的厚度。Magnetoelectric properties refer to the dielectric polarization of a material induced by an external magnetic field, or the magnetization induced by an external electric field. Generally speaking, the magnetoelectric properties refer to the magnetic field-induced dielectric polarization unless otherwise specified. Magnetoelectric properties have broad application prospects in many high-performance magnetoelectric functional components. Specifically, it can be used in many fields such as magnetic field detection, magnetoelectric energy exchange, information storage, and driving. The measurement of the magnetoelectric properties of materials is the most critical link in the research, development and application of magnetoelectric materials. The commonly used index to characterize the magnetoelectric performance is the magnetoelectric voltage coefficient, which is defined as α ME =dV/(tdH), where dH is the AC differential magnetic field superimposed on the DC bias magnetic field, and dV is the two ends of the sample generated under the action of the differential magnetic field The voltage, t is the thickness of the sample.
通常测试条件都是在kHz或者MHz频率下,在该频率段,由亥姆赫兹线圈产生的微分磁场通常都是很微小的,也就是说通过亥姆赫兹线圈的电流非常微弱,而且样品两端产生的电压也是很微小的。因此,磁电材料的磁电响应信号的测量涉及弱信号检测,精确的磁电测量设备必须要用锁相放大器,由于锁相放大器价格高,从而导致目前国内外现有的磁电测量设备成本昂贵。另一方面,由αME=dV/(tdH)可以看出,磁电性能的获得需要同时测量dV和dH,但通常的商用锁相放大器每台只能对一个通道的信号进行锁相放大处理,无法同时测量dV和dH,于是目前国内外通常的做法是只测量dV而名义上的将dH固定[1-2]。在实际测量时,尤其是当交流磁场的频率变化时将dH完全固定是不容易达到的,因此无法对磁场做精确的动态监测,从而也就无法获得准确的磁电性能。锁相放大器的使用工作频率范围也是体现磁电测试系统测量能力的重要指标,一般的锁相放大器的工作频率都在200kHz以下,如果测试条件超出了这个工作频率范围,那么使用锁相放大器就无法满足测试的需要,测试无法进行。如果要拓展设备的测试频率,则需要更为昂贵的宽频锁相放大器,这无疑将更进一步提高了设备成本。此外,磁电性能随外加直流偏置磁场的变化和磁电性能随外加交流磁场频率的变化必须分别加以测量[1-2],无法获得磁电性能同时随外加直流偏置磁场和外加交流磁场频率的变化。由此可见,目前国内外现有的磁电测量设备成本昂贵,精度、频率上限不够高,而且测量过程自动化程度也亟待提高。Usually the test conditions are at kHz or MHz frequency. In this frequency range, the differential magnetic field generated by the Helmhertz coil is usually very small, that is to say, the current passing through the Helmhertz coil is very weak, and the two ends of the sample The voltage generated is also very small. Therefore, the measurement of the magnetoelectric response signal of the magnetoelectric material involves weak signal detection, and the precise magnetoelectric measurement equipment must use a lock-in amplifier. Due to the high price of the lock-in amplifier, the cost of the existing magnetoelectric measurement equipment at home and abroad expensive. On the other hand, from α ME =dV/(tdH), it can be seen that the acquisition of magnetoelectric properties requires simultaneous measurement of dV and dH, but each common commercial lock-in amplifier can only perform lock-in amplification processing on the signal of one channel , it is impossible to measure dV and dH at the same time, so the common practice at home and abroad is to only measure dV and nominally fix dH [1-2]. In actual measurement, especially when the frequency of the AC magnetic field changes, it is not easy to completely fix dH, so it is impossible to do accurate dynamic monitoring of the magnetic field, and thus it is impossible to obtain accurate magnetoelectric properties. The operating frequency range of the lock-in amplifier is also an important indicator of the measurement capability of the magnetoelectric test system. The operating frequency of the general lock-in amplifier is below 200kHz. If the test conditions exceed this operating frequency range, then the lock-in amplifier cannot be used. The test cannot be performed because the test requirements are met. If the test frequency of the equipment is to be expanded, a more expensive broadband lock-in amplifier is required, which will undoubtedly further increase the equipment cost. In addition, the change of the magnetoelectric properties with the applied DC bias magnetic field and the change of the magnetoelectric properties with the frequency of the applied AC magnetic field must be measured separately [1-2]. frequency changes. It can be seen that the existing magnetoelectric measurement equipment at home and abroad is expensive, the accuracy and frequency upper limit are not high enough, and the degree of automation of the measurement process needs to be improved urgently.
[1]M.Mahesh Kumar et al,An experimental setup for dynamic measurement ofmagnetoelectric effect,Bull.Mater.Sci.,21(3),251-255(1998)[1] M.Mahesh Kumar et al, An experimental setup for dynamic measurement of magnetoelectric effect, Bull.Mater.Sci., 21(3), 251-255(1998)
[2]Shuxiang Dong,Jie-Fang Li,and D.Viehland,Characterization of magnetoelectriclaminate composites operated in longitudinal-transverse and transverse-transverse modes,J.Appl.Phys.,95(5),2625-2630(2004)[2] Shuxiang Dong, Jie-Fang Li, and D.Viehland, Characterization of magnetoelectriclaminate composites operated in longitudinal-transverse and transverse-transverse modes, J.Appl.Phys., 95(5), 2625-2630(2004)
发明内容Contents of the invention
本发明的目的在于克服现有测量仪器成本高,测量精度、频率上限和自动化程度不高的弊端,为此将锁相放大器虚拟化,即将锁相放大器的功能利用计算机软件来实现,因为锁相放大器是虚拟的,可以很方便的实现对多通道的信号进行锁相放大处理。这样一来,不仅可以同时精确的动态测量dV和dH,改善了磁电性能测量精度,而且相比硬件锁相放大器工作频率上限得到大幅度提高,同时减少磁电测量设备的制造成本,此外,本发明结合外加直流偏置磁场的控制和测量进一步提高磁电测量设备的自动化程度,从而提高磁电测量精度和效率。The purpose of the present invention is to overcome the disadvantages of high cost of existing measuring instruments, low measurement accuracy, upper frequency limit and low degree of automation. For this reason, the lock-in amplifier is virtualized, that is, the function of the lock-in amplifier is realized by computer software, because the phase-lock The amplifier is virtual, and it is very convenient to implement lock-in amplification processing on multi-channel signals. In this way, not only can dynamic measurement of dV and dH be performed accurately at the same time, which improves the measurement accuracy of magnetoelectric performance, but also greatly improves the upper limit of operating frequency compared with hardware lock-in amplifiers, and at the same time reduces the manufacturing cost of magnetoelectric measurement equipment. In addition, The invention combines the control and measurement of the external DC bias magnetic field to further improve the automation degree of the magnetoelectric measurement equipment, thereby improving the precision and efficiency of the magnetoelectric measurement.
一种全自动磁电材料磁电性能测量装置,包括电磁铁1、亥姆赫兹线圈2、特斯拉计3、直流电源4、测试样品5、计算机8、差分仪11、数据采集前端12、信号发生器13、功率放大器14。数据采集前端是一个可多路同步采样的A/D卡或数字示波器,计算机8设有虚拟磁场闭环控制单元6、磁电耦合性能的记录单元7、虚拟信号发生控制单元9、相关器10。A fully automatic measuring device for magnetoelectric properties of magnetoelectric materials, comprising an
电磁铁1用来产生直流偏置磁场;在直流磁场中间放入的亥姆赫兹线圈2用来产生交流磁场;外加偏置磁场强度由特斯拉计3读出并送入计算机。直流电源4控制外加偏置磁场;计算机中的虚拟磁场闭环控制单元6,可读入从3传来的直流偏置磁场的强度;通过D/A卡传递直流偏置磁场的控制信号到达电源4。计算机8中的虚拟信号发生控制单元9通过信号发生器13将信号经过功率放大器14放大后提供给亥姆赫兹线圈2作为其驱动信号。交变磁场的强度通过串联在亥姆赫兹线圈2中的电阻R转换成电压信号输入数据采集前端12。磁场中的待测样品5上产生的磁电响应信号通过两根同轴线连接到差分仪11;差分仪11的输入信号线通过浮地接法提高信噪比,其输出接到数据采集前端12上。虚拟信号发生控制单元9、相关器10、数据采集前端12是虚拟锁相放大器的三个主要部分。相关器10是虚拟多通道锁相放大器的核心部件,利用数据采集前端12输入的磁电响应信号与交流磁场强度的信号和信号发生控制单元9输入的参比信号进行相关计算得到磁电耦合强度和相位差等信息并将结果输出到磁电耦合性能的记录单元7。磁电耦合性能记录单元7可以动态纪录来自磁场控制单元6输入的直流偏置磁场强度大小;以及由相关器10传入的磁电响应强度和相位滞后的信息和其他实验信息,从而完成连续的全自动化的测量。The
本发明中相关器的使用前提是被测信号是具有一定周期的微弱正弦信号,其数学形式为s(t)=Asin(ωt+φ),而在数据采集前端的测量信号中混有噪音n(t),即测量信号Vs(t)=s(t)+n(t)。相关器中的参比信号是两个振幅为1,相位相差π/2的正弦信号Vr(t)=sin(ωt)和Vr′(t)=sin(ωt+π/2)。求解离散信号互相关函数的联立方程,可以得到
本发明中使用的虚拟多路锁相放大原理是将同步的电压信号dV和磁场信号dH同时传送进入相关器,计算结果分别得到电压信号的幅值AdE与相位φdE和磁场信号的幅值AdH与相位φdH,进而计算出磁电耦合性能的大小和磁电耦合的幅值αME和相位差φME。The principle of virtual multi-channel lock-in amplification used in the present invention is to transmit the synchronous voltage signal dV and magnetic field signal dH into the correlator at the same time, and the calculation results obtain the amplitude A dE and phase φ dE of the voltage signal and the amplitude of the magnetic field signal respectively A dH and phase φ dH , and then calculate the magnitude of the magnetoelectric coupling performance and the amplitude α ME and phase difference φ ME of the magnetoelectric coupling.
因为电源4产生的直流磁场不会随时间改变,因此磁电测量之前先对磁场进行标定,生成表格。当需要加载特定强度的直流偏置磁场时直接通过查表来设定直流磁场。在动态磁电测量过程中实时跟踪每次磁电性能测量时刻所对应的瞬时直流偏置磁场值,它和设定的直流偏置磁场值相差小于5%。Because the DC magnetic field generated by the
本发明使用的虚拟锁相放大原理是对磁电响应的交流信号进行相敏检波,即利用被测信号和参考信号具有相同频率和一定的相位关系,只对被测信号中和参考信号同频率的那部分信号分量有响应,而被测信号中与参比信号不同频率的那部分当作噪音则被抑制,因此能大幅度改善磁电测量的信噪比。The principle of virtual phase-locked amplification used in the present invention is to perform phase-sensitive detection on the AC signal of the magnetoelectric response, that is, to use the measured signal and the reference signal to have the same frequency and a certain phase relationship, and only use the same frequency as the reference signal in the measured signal The part of the signal component has a response, and the part of the measured signal with a frequency different from the reference signal is suppressed as noise, so the signal-to-noise ratio of the magnetoelectric measurement can be greatly improved.
本发明所采用的虚拟多通道锁相放大原理搭建的磁电测量装置具有以下技术效果:The magnetoelectric measuring device built by the principle of virtual multi-channel lock-in amplification adopted in the present invention has the following technical effects:
(1)同步动态精确的测量磁电电压系数公式中的两个参量dV和dH,从而提高了磁电性能的测量精度,这是其他磁电测量装置所不具备的。(1) Synchronously and dynamically accurately measure the two parameters dV and dH in the formula of the magnetoelectric voltage coefficient, thereby improving the measurement accuracy of the magnetoelectric performance, which is not available in other magnetoelectric measuring devices.
(2)由于采用了虚拟的锁相放大技术,对锁相放大的整个过程的控制自由度相当大,因而增加磁电测量设备的自动化控制水平。国内外其他磁电测量设备中尚未有人引入虚拟锁相放大技术。(2) Due to the adoption of virtual lock-in amplification technology, the control degree of freedom for the entire process of lock-in amplification is quite large, thus increasing the automatic control level of the magnetoelectric measuring equipment. No one has introduced virtual lock-in amplification technology in other magnetoelectric measuring equipment at home and abroad.
(3)本发明中没有使用真实的锁相放大器,从而大大降低了磁电测量设备的成本。(3) No real lock-in amplifier is used in the present invention, thereby greatly reducing the cost of the magnetoelectric measuring equipment.
(4)由于使用的是虚拟锁相放大器,其工作频率将大大拓展,不受硬件锁相放大器工作频率的限制。(4) Due to the use of a virtual lock-in amplifier, its operating frequency will be greatly expanded without being limited by the operating frequency of the hardware lock-in amplifier.
(5)虚拟锁相放大器对发生信号和产生信号同时进行采集和计算,可以直接求出两者的相位,从而对相位的研究提供可能性。(5) The virtual lock-in amplifier collects and calculates the generated signal and the generated signal at the same time, and can directly calculate the phase of the two, thus providing the possibility for phase research.
(6)本发明将虚拟多通道锁相放大器和虚拟的直流磁场的闭环控制系统结合,可以全自动的测量出材料磁电性能随外加直流偏置磁场和交变磁场频率变化的三维图像。材料磁电性能随外加直流偏置磁场和外加交流磁场频率变化的三维图像到目前为止在国内外尚未有人能测出。(6) The present invention combines the virtual multi-channel lock-in amplifier with the closed-loop control system of the virtual DC magnetic field, and can automatically measure the three-dimensional image of the magnetoelectric properties of the material changing with the frequency of the external DC bias magnetic field and alternating magnetic field. The three-dimensional images of the magnetic and electrical properties of materials changing with the frequency of the applied DC bias magnetic field and the applied AC magnetic field have not been measured so far at home and abroad.
附图说明Description of drawings
图1是本发明所述利用虚拟多通道锁相放大原理的全自动磁电测量装置的结构示意图。Fig. 1 is a structural schematic diagram of a fully automatic magnetoelectric measuring device utilizing the principle of virtual multi-channel lock-in amplification according to the present invention.
图2是本发明所述对Ni/PZT/Ni层状复合材料横向磁电耦合强度随外加直流偏置磁场变化的测量曲线。Fig. 2 is a measurement curve of the variation of transverse magnetoelectric coupling strength of Ni/PZT/Ni layered composite material with external DC bias magnetic field according to the present invention.
图3是本发明所述对Ni/PZT/Ni层状复合材料横向磁电耦合强度和磁电响应的相位滞后随外加交流磁场频率的变化。Fig. 3 is the variation of the phase lag of the transverse magnetoelectric coupling strength and magnetoelectric response of the Ni/PZT/Ni layered composite material with the frequency of the applied AC magnetic field according to the present invention.
图4是图3的局部变化。FIG. 4 is a partial variation of FIG. 3 .
图5是本发明所述对Ni/PZT/Ni层状复合材料的磁电耦合强度随外加偏置磁场和外加交流磁场频率变化的三维图像。Fig. 5 is a three-dimensional image of the variation of the magnetoelectric coupling strength of the Ni/PZT/Ni layered composite material with the frequency of the applied bias magnetic field and the applied AC magnetic field according to the present invention.
图6是本发明所述对Ni/PZT/Ni层状复合材料磁电响应的相位滞后随外加偏置磁场和外加交流磁场频率变化的三维图像。Fig. 6 is a three-dimensional image of the phase lag of the magnetoelectric response of the Ni/PZT/Ni layered composite material according to the present invention as a function of the frequency of the applied bias magnetic field and the applied AC magnetic field.
具体实施方式Detailed ways
下面通过实施实例及附图作进一步说明。Further description will be given below through implementation examples and accompanying drawings.
实施例1,典型的测试样品5采用的是Ni/PZT/Ni层状复合材料。测量Ni/PZT/Ni层状复合材料横向磁电耦合系数αME,31以及磁电相应的相位滞后。In
(1)按照图1的原理组装仪器,其中产生磁场的感测电阻R=10Ω。数据采集前端12是Rigol DS5062CA型示波器;信号发生器13是Agilent 33220A;直流偏置磁场系统采用WWL-LSX21型三相直流稳压电源和SB175型电磁铁;特斯拉计3使用HT100;在计算机(1.6GHz,256MB,40GB,WindowsXP)安装Labview8.0评估版作为控制程序的开发平台。根据上述原理在Labview下编写相应的测量控制软件。(1) Assemble the instrument according to the principle of Fig. 1, wherein the sensing resistance R=10Ω for generating the magnetic field. Data acquisition
(2)测试的样品是在尺寸为25mm×25mm×0.8mm的PZT铁电陶瓷上电镀Ni的Ni/PZT/Ni层状复合正方形片,其中Ni、PZT和Ni的厚度分别为0.4mm、0.8mm和0.4mm。磁电复合片的两面按图1所示放入磁场,引出同轴线缆,放置方向保证直流磁场方向、交流磁场方向和正方形片的边长方向平行。因为磁场方向在正方形面内且和正方形边长一致,记为1方向,又因为磁生电场输出方向为垂直片的方向,定义为3方向,所以磁电耦合强度记作αME,31。(2) The sample tested is a Ni/PZT/Ni layered composite square plate with Ni electroplated on a PZT ferroelectric ceramic with a size of 25mm×25mm×0.8mm, where the thicknesses of Ni, PZT and Ni are 0.4mm and 0.8mm respectively. mm and 0.4mm. Put the two sides of the magnetoelectric composite sheet into the magnetic field as shown in Figure 1, and lead out the coaxial cable. The direction of placement ensures that the direction of the DC magnetic field, the direction of the AC magnetic field, and the direction of the side length of the square sheet are parallel. Since the direction of the magnetic field is within the square surface and is consistent with the side length of the square, it is recorded as the 1 direction, and because the output direction of the magnetically generated electric field is the direction perpendicular to the sheet, it is defined as the 3 direction, so the magnetoelectric coupling strength is recorded as α ME,31 .
(3)检查所有的电源线和信号线连线无误后开始加电。将从信号发生器13中输出的交流磁场的驱动信号频率设定为1kHz,幅值设定为1V,并保持不变。然后开始逐渐增加直流偏置磁场,同时观察磁电输出,如图2所示,可以看出磁电输出出现峰值时对应的直流偏置磁场值HD=150Oe。(3) After checking that all the power lines and signal lines are connected correctly, start to power on. The frequency of the driving signal of the AC magnetic field output from the
(4)固定直流偏置磁场HD=150Oe和信号发生器13的输出交流电压的幅值1V不变,只改变信号发生器13输出交流电压的频率,运行控制程序,自动记录磁电响应输出的幅值和相位滞后值,得到图3。它是Ni/PZT/Ni层状复合材料横向磁电耦合强度和磁电响应的相位滞后随外加交流磁场频率变化的测量曲线。可以看出Ni/PZT/Ni层状复合材料的横向磁生电场系数αME,31最大值为41.5V/cm Oe,出现在85.3kHz。另外两个共振峰分别在59.5kHz和73.5kHz,虽然在强度上分辨不出他们是共振峰,但是根据磁电响应的相位滞后曲线,可以确认他们是两个共振峰。(4) The amplitude 1V of the output AC voltage of fixed DC bias magnetic field H D =150Oe and
(5)分析图3磁电输出强度出现最强峰值的位置,保持其它条件不变,对峰值附近的频率进行精细扫描,得到图4,它是Ni/PZT/Ni层状复合材料在共振频率附近的横向磁电耦合强度和磁电响应的相位滞后随外加交流磁场频率变化的测量曲线。通过最强共振峰附近频率的精细扫描可以得到更精确的共振频率的大小在85.25kHz,对应的αME,31最大值也增加为43.2V/cm Oe。(5) Analyze the position of the strongest peak of the magnetoelectric output intensity in Figure 3, keep other conditions unchanged, and perform a fine scan on the frequency near the peak to obtain Figure 4, which is the resonant frequency of the Ni/PZT/Ni layered composite Measurement curves of the nearby transverse magnetoelectric coupling strength and the phase lag of the magnetoelectric response as a function of the frequency of the applied AC magnetic field. By finely scanning the frequency near the strongest resonance peak, a more accurate resonance frequency can be obtained at 85.25kHz, and the corresponding α ME, 31 maximum also increases to 43.2V/cm Oe.
实施例2,测量Ni/PZT/Ni层状复合材料的横向磁生电场系数αME,31以及磁电响应的相位滞后随外加偏置磁场和外加交流磁场频率而变化的三维图像。Example 2, measuring the three-dimensional image of the transverse magnetoelectric field coefficient α ME, 31 of the Ni/PZT/Ni layered composite material and the phase lag of the magnetoelectric response changing with the frequency of the applied bias magnetic field and the applied AC magnetic field.
(1)为了增加磁场自动控制模块,另外在计算机的PCI插槽内安装AD/DA卡(AC6632和AC6682)作为直流偏置磁场的控制接口,对测量系统中硬件和软件进行相应的扩充。其余同实例1中的步骤1(1) In order to increase the magnetic field automatic control module, AD/DA cards (AC6632 and AC6682) are installed in the PCI slot of the computer as the control interface of the DC bias magnetic field, and the hardware and software in the measurement system are correspondingly expanded. The rest are the same as
(2)测试的样品同实例1中的步骤2。(2) The sample tested is the same as
(3)固定信号发生器13的输出交流电压的幅值为1V,保持不变,同时改变信号发生器13输出交流电压的频率和直流偏置磁场(见图1中的1)的大小,运行控制程序,自动记录记录磁电响应输出的幅值和相位滞后值,得到图5和图6。它们分别是Ni/PZT/Ni层状复合材料的磁电耦合强度和响应的相位滞后随外加偏置磁场和外加交流磁场频率而变化的三维图像。从图5可以看出,Ni/PZT/Ni层状复合材料的横向磁电耦合性能随偏置磁场在正负两端基本呈对称分布,而且在某个偏置磁场绝对值上达到峰值,这反映Ni/PZT/Ni层状复合材料的磁电耦合性能来源于Ni层的磁致伸缩性能。此外,交流磁场的频率对磁电耦合性能的影响程度显著强于直流偏置磁场。从图6种可以看出,与图3对应的三个频率分界面为59.5kHz,73.5kHz和85kHz,反映共振特性不随偏置磁场变化而变化。在图6上同时还有一个直流偏置磁场引入的分界面,体现磁电耦合的符号变化。(3) The amplitude of the output AC voltage of the fixed
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