CN101030527A - Plasma etching method and computer-readable storage medium - Google Patents
Plasma etching method and computer-readable storage medium Download PDFInfo
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- CN101030527A CN101030527A CNA200710084786XA CN200710084786A CN101030527A CN 101030527 A CN101030527 A CN 101030527A CN A200710084786X A CNA200710084786X A CN A200710084786XA CN 200710084786 A CN200710084786 A CN 200710084786A CN 101030527 A CN101030527 A CN 101030527A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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Abstract
The inventon provides a plasm etching method capable controlling a plasm in a wide range when etching an anti-reflection film so as to control distribution of an etching characteristic, thereby capable of controlling a CD distribution during etching of a etching object film. The plasm etching method of the invention is used for performing plasm etching on the anti-reflection film formed on an object (W) to be treated, and comprising: a process for configuring the object to be treated which is orderly formed with the etching object film, the anti-reflection film and a patternized photoresist film on a substrate in a treatment container (10) in which a first electrode (34) and a second electrode (16) are arranged relatively up and down; a process for introducing gas into the treatment container (10); a process for applying a high-frequency electric power on anyone of a first electrode (34) and a second electrode (16) and generating a plasm; and a process for applying a DC voltage on the any electrode.
Description
Technical field
The present invention relates to a kind of the antireflection film that is arranged on the processed substrates such as semiconductor substrate be carried out the plasma-etching method of plasma etching and the storage medium of embodied on computer readable.
Background technology
In the manufacturing process of semiconductor device, to semiconductor wafer, utilize photoetching (photolitho-graphy) operation to form the photoresist pattern as processed substrate, it is carried out etching as mask.But, when forming the superfine pattern, the standing wave that causes by the change of the thickness of the optical property of the etched film of the lower floor of photoresist film and photoresist film, by the change from the CD (critical dimension (critical dimension)) of reflection fluting (notching) and the refract light of etched film and the photoresist pattern that reverberation causes, generation inevitably.Therefore, in order to prevent the reflection at etched film, between etched film and photoresist film, insert antireflection film, this antireflection film is by being constituted at the good material of the employed light wavelength of exposure source territory light absorption.
Such antireflection film is roughly divided into: inorganic is antireflection film and organic system antireflection film, and the organic anti-reflective film becomes main flow recently.And, when antireflection film is carried out etching, use the plasma etching (for example, with reference to patent documentation 1) of photoresist film as mask.
But, recently, in lithography technology, corresponding to the requirement of trickle processing, as etching mask, use can form the ArF photoresist of the following pattern openings of about 0.13 μ m, but problems such as it is low that the ArF photoresist can produce plasma-resistance, and CD is wide, so, in order to ensure the CD of hope, the etching of the antireflection film that directly contacts with etched film becomes important.
But antireflection film is difficult to obtain etch uniformity in essence, in addition, has known various materials as antireflection film, although every kind etching characteristic difference of these materials, but but still can not find the parameter of wide region control etching characteristic.For this reason, can not control suitably in etched and to distribute, after the etching of etch target film in, CD distributes to wait and is easy to generate unevenly, and is difficult to elimination.
On the other hand, in above-mentioned such lithography technology, because relations such as the employed light wavelengths of exposure, its resolution has certain boundary, and is general, and it is difficult forming the following sized opening of its resolution limit portion on etchant resist.But recently, the granular of semiconductor device is showing improvement or progress day by day, and has reached the degree that requires the CD also littler than the limiting size of ArF resist, has proposed the method (for example patent documentation 2) of the CD of contraction (shrink) antireflection film.In this technology, when the etching antireflection film, on the etching sidewall, produce deposit, realized the CD also littler than initial CD.As such method, when etching, use the Etaching device of parallel plate-type, the power of the High frequency power that applies to upper electrode of raising sometimes perhaps, uses the C that is easy to generate deposit as etching gas
4F
8Gas etc.
But in the former method, etched uniformity worsens, and in the latter's method, is difficult to guarantee the rate of etch of wishing, productivity ratio reduces.
Patent documentation 1: TOHKEMY 2005-26348 communique
Patent documentation 2: international No. 03/007357 brochure (pamphlet) that disclose.
Summary of the invention
The present invention makes in view of such problem, the objective of the invention is to, a kind of plasma-etching method is provided, when antireflection film is carried out etching, can control plasma at wide region, control the distribution of etching characteristic thus, the CD in the etching of the etch target film after therefore can controlling distributes.
In addition, the objective of the invention is to, a kind of plasma-etching method is provided, when the etching of antireflection film, can not damage etch uniformity, and do not reduce etch-rate ground and realize that the CD that wishes shrinks.
Further, the objective of the invention is to, a kind of storage medium of embodied on computer readable is provided, it stores the program of the such plasma-etching method of operation.
In order to address the above problem, first viewpoint of the present invention provides a kind of plasma-etching method, be used for the antireflection film that forms on handled object is carried out plasma etching, it is characterized in that, comprise: in the container handling that is relatively set with first electrode and second electrode up and down, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film successively on the substrate and is patterned; In container handling, import the operation of handling gas; In above-mentioned first electrode and second electrode any applies High frequency power, generates the operation of plasma; With the operation that applies direct voltage to above-mentioned any electrode.
In above-mentioned first aspect, above-mentioned direct voltage can be for-200～-scope of 1500V.
A second aspect of the present invention provides a kind of plasma-etching method, be used for the antireflection film that forms on handled object is carried out plasma etching, it is characterized in that, comprise: in the container handling that is relatively set with first electrode and second electrode up and down, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film successively on the substrate and is patterned; In container handling, import the operation of handling gas; In above-mentioned first electrode and second electrode any applies High frequency power, generates the operation of plasma; With when generating above-mentioned plasma, apply the direct voltage of regulation to above-mentioned any electrode, make the operation that the CD that obtains wishing distributes when thereafter the etch target film of substrate being carried out etching.
In above-mentioned second aspect, above-mentioned direct voltage can be-200～-scope of 1500V.And, handled object at test usefulness, can obtain the dc voltage value of the CD distribution that obtains wishing when feasible etch target film to substrate carries out etching in advance, apply the dc voltage value of this moment, thereby apply the operation of the direct voltage of afore mentioned rules to above-mentioned any electrode.
A third aspect of the present invention, a kind of plasma-etching method is provided, be used for the antireflection film that forms on handled object is carried out plasma etching, it is characterized in that, comprise: in the container handling that is relatively set with first electrode and second electrode up and down, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film and patterning on the substrate successively; In container handling, import the operation of handling gas; In described first electrode and second electrode any applies High frequency power, generates plasma, and described photoresist film is carried out etched operation as mask to described antireflection film; When described etching, apply the direct voltage of setting to any electrode, make the etched pattern size of described antireflection film than the operation of the little ormal weight of pattern dimension of described photoresist film.
A fourth aspect of the present invention, a kind of plasma-etching method is provided, it is characterized in that, comprise: in the container handling that is relatively set with first electrode and second electrode, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film successively on the substrate and is patterned; In container handling, import the operation of handling gas; In above-mentioned first electrode and second electrode any applies High frequency power, generates plasma, carries out etched operation; When described etching, apply the direct voltage of setting to any electrode, make the etched pattern size of described antireflection film than the operation of the little ormal weight of pattern dimension of described photoresist film; With the antireflection film that will be formed with the etched pattern littler than the pattern dimension of described resist film as etching mask, with the pattern dimension littler, described etch target film is carried out etched operation than the pattern dimension of described photoresist.
The above-mentioned the 3rd or fourth aspect in, described direct voltage can be-200～-scope of 1500V.And, for the handled object of test usefulness, can obtain in advance and make that the pattern dimension of described antireflection film is the dc voltage value of the size of hope, apply the dc voltage value of this moment to described any electrode.
In aspect in above-mentioned first～the 4th any, described first electrode is a upper electrode, described second electrode is the lower electrode of mounting handled object, can apply High frequency power and the described direct voltage that is used to generate described plasma to described first electrode.In this case, can apply the High frequency power that ion is introduced usefulness to described second electrode.
A fifth aspect of the present invention, a kind of storage medium of embodied on computer readable is provided, be to store the computer-readable storage medium of the control program of operation on computers, it is characterized in that, when described control program moves, by the computer control plasma processing apparatus, carry out described first any plasma-etching method in the fourth aspect.
According to the present invention, when antireflection film is carried out plasma etching, supply with plasma formation High frequency power to first electrode or second electrode, when antireflection film is carried out plasma etching, by applying direct voltage to any electrode, can carry out controlling plasma, apply direct voltage, can control the etching of antireflection film by controlling suitably.By like this, can control antireflection film as etching mask and the CD of etched etch target film distributes, can reduce CD uneven of the etch target film in the existing issue.In addition, the etching of such antireflection film can be controlled, and also can reduce in the face of etch depth of etch target film uneven thus.
In addition, antireflection film is carried out etching on one side by any electrode being applied direct voltage on one side, can supply with attached to direct voltage to handled object and apply polymer on the electrode, by controlling its service voltage, can make the etched pattern size of antireflection film than the little ormal weight of pattern dimension of described photoresist film, can not reduce etch uniformity and rate of etch, realize that the CD that wishes shrinks.
Description of drawings
Fig. 1 is the summary sectional view of an example of the plasma-etching apparatus that uses in the enforcement of the present invention of expression.
Fig. 2 is the figure of the structure of the adaptation that is connected with first high frequency electric source in the plasma-etching apparatus of presentation graphs 1.
Fig. 3 is the sectional view of the structure of the semiconductor wafer W used in the enforcement of expression first execution mode of the present invention.
Fig. 4 is illustrated in the plasma processing apparatus of Fig. 1 the V when upper electrode applies direct voltage
DcFigure with the variation of plasma sheath thickness.
Fig. 5 is illustrated in the plasma processing apparatus of Fig. 1, to upper electrode apply the situation of direct voltage and situation about not applying under, the figure of plasmoid relatively.
Fig. 6 is the figure that distributes in the face of the expression etch-rate that changes the antireflection film under the situation of the direct voltage apply.
Fig. 7 is the figure that distributes in the face of the expression etch-rate that changes the photoresist film under the situation of the direct voltage apply.
Fig. 8 is under the situation of presentation graphs 6 and Fig. 7, the figure that distributes in the face of antireflection film with respect to the selection ratio of resist.
Fig. 9 is the figure of structure of the semiconductor wafer of the expression effect that is used to confirm first execution mode of the present invention.
Figure 10 is the figure of structure of the semiconductor wafer of the expression effect that is used to confirm second execution mode of the present invention.
Figure 11 is the skeleton diagram of example that expression can be applicable to the plasma-etching apparatus of other type in the enforcement of the present invention.
Figure 12 is the sectional view of example that expression can be applicable to the plasma-etching apparatus of the other type in the enforcement of the present invention.
Figure 13 is the skeleton diagram of example that expression can be applicable to the plasma-etching apparatus of the other type in the enforcement of the present invention.
Figure 14 is the sectional view of example that expression can be applicable to the plasma-etching apparatus of the other type in the enforcement of the present invention.
Symbol description
10 chambers (container handling); 16 pedestals (lower electrode); 34 upper electrodes; 44 feeder rod used thereins; 46,88 adaptations; 48 first high frequency electric sources; 50 variable DC power supply; 51 controllers; 52 connections, off switch; 66 handle the gas supply source; 84 exhaust apparatus; 90 second high frequency electric sources; The 91GND module; The 101Si substrate; 103 etch target films; 104 antireflection films; 105 photoresist films; W semiconductor wafer (processed substrate)
Embodiment
Below, specifically describe embodiments of the present invention with reference to accompanying drawing.
Fig. 1 is the summary sectional view of an example of the plasma-etching apparatus that uses in the invention process.
This plasma Etaching device constitutes capacitive coupling type parallel flat plasma-etching apparatus, for example has the chamber roughly cylindraceous (container handling) 10 that is made of by the aluminium of anodized the surface.This chamber 10 is ground connection safely.
In the bottom of chamber 10, the insulation board 12 across being made of pottery etc. disposes columned base supports platform 14, and this base supports platform 14 is provided with the pedestal (suscepter) 16 that for example is made of aluminium.Pedestal 16 constitutes lower electrode, and mounting is as the semiconductor wafer W of processed substrate thereon.
On pedestal 16, be provided with the electrostatic chuck 18 that keeps semiconductor wafer W with electrostatic force absorption.This electrostatic chuck 18 has the structure of the electrode 20 that is made of conducting film a pair of insulating barrier or insulating trip clamping, and DC power supply 22 is electrically connected with electrode 20.And by the electrostatic force such as Coulomb force that the direct voltage that is used to from DC power supply 22 produces, semiconductor wafer W absorption remains on the electrostatic chuck 18.
Around electrostatic chuck 18 (semiconductor wafer W), above the pedestal 16, dispose the focusing ring (conditioning ring) 24 of the conductivity that for example constitutes by silicon that is used to improve etch uniformity.In the side of pedestal 16 and base supports platform 14, be provided with the inwall parts 26 cylindraceous that for example constitute by quartz.
In the inside of base supports platform 14, for example circumference is provided with cryogen chamber 28.By being arranged on outside not shown refrigeration machine (chiller) unit, supply with the cold-producing medium of set point of temperature to this cryogen chamber circulation by pipe arrangement 30a, 30b, cooling water for example can be controlled the treatment temperature of the semiconductor wafer W on the pedestal by refrigerant temperature.
Further, from the heat-conducting gas of not shown heat-conducting gas supply mechanism, for example He gas is supplied to by gas supply pipe road 32 between the back side of top and semiconductor wafer W of electrostatic chuck 18.
Above as the pedestal 16 of lower electrode, in the mode relative with pedestal 16, upper electrode 34 be arranged in parallel.And the space between the upper and lower electrode 34,16 is the plasma span.Upper electrode 34 forms the face that is connected with the plasma span, i.e. opposite face with relative as the semiconductor wafer W on the pedestal 16 of lower electrode.
This upper electrode 34 is supported on the top of chamber 10 by insulating properties curtain-shaped cover member 42, comprising: the opposite face of formation and pedestal 16, and have the battery lead plate 36 of a plurality of squit holes 37; This battery lead plate 36 is freely supported in loading and unloading, by the conductive material electrode support 38 of the water-cooling structure that constitutes of the aluminium crossed by anodized of surface for example.Preferred electrode plate 36 is few low resistance electric conductor or semiconductors of Joule heat, in addition, strengthens viewpoint against corrosion from aftermentioned, preferably contains the material of silicon.From such viewpoint, preferred electrode plate 36 is made of silicon or SiC.In the inside of electrode support 38, be provided with gas diffusion chamber 40, a plurality of gas through flow holes 41 that are communicated with this gas diffusion chamber 40 and gas squit hole 37 extend downwards.
Be formed with the gas introduction port 62 that imports processing gas to gas diffusion chamber 40 on electrode support 38, gas supply pipe 64 is connected with this gas introduction port 62, handles gas supply source 66 and is connected with gas supply pipe 64.On gas supply pipe 64, begin to be disposed with mass flow controller (MFC) 68 and open and close valve 70 (also can utilize FCN to replace MFC) from upstream side.And, be used for etched processing gas, for example CF from the conduct of handling gas supply source 66
4The such fluorocarbon gas (CxFy) of gas is directed at gas diffusion chamber 40 from gas supply pipe 64, sprays to the plasma span with the shower shape by gas stream through hole 41 and gas squit hole 37.That is, upper electrode 34 usefulness act on and supply with the shower nozzle of handling gas.
First high frequency electric source 48 is electrically connected with upper electrode 34 by adaptation 46 and feeder rod used therein 44.First high frequency electric source 48 output 10MHz are with the upper frequency High frequency power of 60MHz for example.Adaptation 46 makes load impedance and first high frequency electric source, 48 inside (perhaps output) impedance matching, so the output impedance with first high frequency electric source 48 when making chamber 10 in generation plasma and load impedance look consistent function.The lead-out terminal of adaptation 46 is connected with the upper end of feeder rod used therein 44.
On the other hand, except first high frequency electric source 48, variable DC power supply 50 is electrically connected with above-mentioned upper electrode 34.Variable DC power supply 50 also can be a bipolar power supply.Specifically, this variable DC power supply 50 is connected with upper electrode 34 with feeder rod used therein 44 by above-mentioned adaptation 46, the connection that can power by connection/off switch 52, closes.The connection of the polarity of variable DC power supply 50 and electric current, voltage and connection/off switch 52, close and to control by controller 51.
As shown in Figure 2, adaptation 46 has: first variable capacitor 54 that is provided with from power supply pipeline 49 branches of first high frequency electric source 48; Be arranged on second variable capacitor 56 in downstream of this breakout of power supply pipeline 49, bring into play above-mentioned functions thus.In addition, in adaptation 46, be provided with and catch (trap), make dc voltage and current (the following direct voltage that only is called) supply with upper electrode 34 effectively from the high frequency (for example 60MHz) of first high frequency electric source 48 with from the filter 58 of the high frequency (for example 2MHz) of second high frequency electric source described later.That is, the direct current from variable DC power supply 50 is connected with power supply pipeline 49 by filter 58.This filter 58 is made of coil 59 and capacitor 60, is hunted down from the high frequency of first high frequency electric source 48 with from the high frequency of aftermentioned second high frequency electric source thus.
Begin the mode of extending to the top of the height and position of upper electrode 34 with the sidewall from chamber 10, cylindric earthing conductor 10a is set, the top plate portion of this cylindric earthing conductor 10a is by tubular insulating element 44a and top feeder rod used therein 44 electric insulations.
Second high frequency electric source 90 is electrically connected with pedestal 16 as lower electrode by adaptation 88.To bottom electrode base 16 supply high frequency electric power, thus, introduce ion from this second high frequency electric source 90 to the semiconductor wafer W side.Frequency in second high frequency electric source, 90 output 300kHz～13.56MHz scopes, for example High frequency power of 2MHz.Adaptation 88 makes inside (perhaps output) impedance matching of the load impedance and second high frequency electric source 90, so the impedance with second high frequency electric source, 90 inside when making chamber 10 in generation plasma seems consistent function with load impedance.
Be used for making that the high frequency (60MHz) from first high frequency electric source 48 does not pass through, make, be electrically connected with upper electrode 34 from the low pass filter (LPF) 92 of high frequency (2MHz) ground connection of second high frequency electric source 90.This low pass filter (LPF) 92 preferably is made of LR filter or LC filter, but a lead also can give fully big reactance to the high frequency (60MHz) from first high frequency electric source 48 owing to only both made, so, so also can finish.On the other hand, be used for making and be electrically connected with pedestal 16 as lower electrode from the high frequency filter (HPF) 94 of high frequency (60MHz) ground connection of first high frequency electric source 48.
Be provided with exhaust outlet 80 in the bottom of chamber 10, exhaust apparatus 84 is connected with this exhaust outlet 80 by blast pipe 82.Exhaust apparatus 84 has turbomolecular pump equal vacuum pump, can be with the vacuum degree of the hope of reducing pressure in the chamber 10.In addition, the sidewall of chamber 10 is provided with moving into of semiconductor wafer W and takes out of mouthfuls 85, and this is moved into and takes out of mouthfuls 85 and can open and close by gate valve 86.In addition, be provided with deposit guard shield 11 in the mode that can freely load and unload, be used to prevent that the secondary product of etching (deposit) is attached to chamber 10 along the inwall of chamber 10.That is, deposit guard shield 11 constitutes chamber wall.In addition, deposit guard shield 11 also is arranged on the periphery of inwall parts 26.Between the deposit guard shield 11 of the deposit guard shield 11 of the chamber wall side of the bottom of chamber 10 and inwall parts 26 sides, be provided with exhaustion plate 83.As deposit guard shield 11 and exhaustion plate 83, can use suitably on aluminum, to cover Y
2O
3Material on pottery.
The formation chamber inner wall of deposit guard shield 11 part with the part substantially the same height of wafer W, be provided with the electroconductive component (GND module) 91 that DC ground connection connects, can bring into play preventing the paradoxical discharge effect thus.
Each component part of plasma processing apparatus forms with control part (whole control device) 95 and is connected and controlled structure.In addition, user interface 96 is connected with control part 95, and this user interface is carried out keyboard, the visualization display plasma processing apparatus of order input operation etc. for the managing plasma processing unit by engineering management person the display etc. of operational situation constitutes.
In addition, storage part 97 is connected with control part 95, this storage part 97 stores and is used to utilize the control program of the control realization of control part 95 by the various processing of plasma processing apparatus operation, and perhaps storing the program that is used for carrying out processing corresponding to treatment conditions in each component part of plasma processing apparatus is scheme.Scheme also can be stored in hard disk or the semiconductor memory, by the state in the storage medium of embodied on computer readable (set) assigned position at storage part 97 is installed to be housed in high movables such as CDROM, DVD.
And, as required, be used to from the indication of user's interface 96 etc., take out scheme arbitrarily from storage part 97, in control part 95 operations, under the control of control part 95, carry out treatment desired by plasma processing apparatus.
Below, the plasma-etching method by the first embodiment of the invention of the plasma-etching apparatus operation that constitutes like this is described.
Here,, as shown in Figure 3, use such wafer as the semiconductor wafer W of handled object: on Si substrate 101, the photoresist film 105 that be formed with etching block film 102, etch target film 103, antireflection film (BARC) 104 successively, is patterned.
As etching block film 102, illustration has the SiC film.Its thickness is about 20～100nm.In addition, as etch target film 103 illustrations interlayer dielectric is arranged, for example illustration SiO
2Film and/or Low-k film.Antireflection film 104, organic system are main flows, and thickness is about 20～100nm.As photoresist film 105, illustration ArF resist, thickness are about 100～400nm.
At first, with gate valve 86 states of being made as out, take out of mouth 85 by moving into, the semiconductor wafer W that will have said structure is moved in the chamber 10, is positioned on the pedestal 16.Then, from handling gas supply source 66, to be used for antireflection film 104 is carried out the flow of etched processing gas with regulation, supply gas diffuser chamber 40, by gas stream through hole 41 and gas squit hole 37, supply with in the chamber 10, and, by carrying out exhaust in 84 pairs of chambers 10 of exhaust apparatus, make pressure wherein form for example interior set point of 0.1～150Pa scope.In addition, base-plate temp forms about 20 ℃.
Here, antireflection film 104 is carried out etched processing gas, can adopt the existing all gases that uses, for example can enumerate and comprise fluorocarbon gas (fluorocarbongas) gas, N (CxFy) as being used for
2Gas and O
2The mist of gas etc.Typically, use CF
4The simple gas of gas or to the gas that wherein adds Ar gas, He gas etc. further, can use to C
4F
8Gas or C
5F
8Add Ar gas, O in the gas
2The gas of gas.
Like this, in chamber 10, importing under the state of etching gas, apply the High frequency power of plasma generation usefulness to upper electrode 34 with the power of regulation from first high frequency electric source 48, simultaneously, apply the high frequency of ion introducing usefulness to pedestal 16 as lower electrode with the power of regulation from second high frequency electric source 90.Then, apply the direct voltage of regulation to upper electrode 34 from variable DC power supply 50.Further, apply the direct voltage that is used for electrostatic chuck 18 to the electrode 20 of electrostatic chuck 18, semiconductor wafer W is fixed on the pedestal 16 from DC power supply 22.
The processing gas that the gas squit hole 37 that forms from the battery lead plate 36 at upper electrode 34 sprays, by upper electrode 34 that High frequency power produced with in as the glow discharge between the pedestal 16 of lower electrode, plasmaization, by by free radical or ion that this plasma generated, the processed face of semiconductor wafer W is carried out etching.
Because High frequency power to upper electrode 34 supply high frequency zones (for example more than the 10MHz), so, can make the plasma densification with desirable state, both made more also can form high-density plasma under the condition of low pressure.
In addition, when forming plasma like this, apply the direct voltage of specified polarity and size to upper electrode 34 from variable DC power supply 50.Thus, can control the etching of antireflection film.But this moment apply the dc voltage value Be Controlled, the CD that obtains wishing in its face when after making object film 103 being carried out etching distributes.
More particularly, if apply direct voltage, as shown in Figure 4, big in the thickness change of the formed plasma sheaths of upper electrode 34 sides (sheath) to upper electrode 34.And, if plasma sheath thickening, the then only plasma downsizing of this part.For example, do not applying under the situation of direct voltage the V of upper electrode side to upper electrode 34
DcBe for example-300V, shown in Fig. 5 (a), plasma is the state with thin sheath thickness d o.But, if apply-direct voltage of 900V the V of upper electrode side to upper electrode 34
DcFor example be-900V the thickness of plasma sheath and V
DcAbsolute value 3/4 proportional, so, shown in Fig. 5 (b), form thicker plasma sheath d
1, the plasma downsizing of this part.The degree of dwindling of this moment changes corresponding to the direct voltage that applies.That is, can control plasma distribution by the direct voltage that control applies, by like this, the etching of may command antireflection film 104.And, etch target film 103 carries out etching with etched antireflection film 104 and photoresist film 105 as etching mask like this, so, can control the etching of antireflection film 104 by applying direct voltage, thus, can control the CD distribution of etch target film 103.That is, from variable DC power supply 50 to direct voltage that upper electrode 34 apply regulation on one side carry out the etching of antireflection film 104 on one side, make the CD that when the etching of next etch target film 103, can obtain wishing distribute.By like this, the CD that can suppress the etch target film is uneven.In addition, by carrying out etching control like this, when the etching of etch target film 103, also can suppress the uneven of etch depth.In this case, the direct voltage that preferably applies to upper electrode 34 be-200～-scope of 1500V.
As mentioned above, after antireflection film 104 being carried out etching, as mentioned above, when photoresist film 105 and antireflection film 104 are carried out etching as etching mask to this etch target film 103, etching condition, for example handle the kind of gas and flow, pressure, temperature etc. and be not particularly limited, can under common service condition, carry out.
When carrying out the plasma-etching method of present embodiment, semiconductor wafer at initial test usefulness, after the plasma-etching apparatus that utilizes Fig. 1 carries out etching with defined terms, from plasma-etching apparatus, take out semiconductor wafer, utilize testing fixture inspection, obtain the dc voltage value of the CD distribution (inner evenness of CD) of available hope when the etch target film to substrate carries out etching in advance, if this moment, one side was carried out etching on one side to the dc voltage value that upper electrode applies grasp, just can promptly carry out etch processes with appropriate condition.As the wafer of such test usefulness, can use a collection of initial a slice or the wafer more than two.
Below, the result of the effect of the method for confirming the first such execution mode is described.Here, use the organic system antireflection film, use ArF against corrosion, use the device of Fig. 1 that these cover layers (blanket) film is carried out etching respectively as photoresist film as antireflection film.As treatment conditions, pressure: 13.3Pa (100mT), top high frequency power: 500W, bottom high frequency power: 400W, processing gas and flow: CF
4=150mL/min (standard state scaled value (sccm)), base-plate temp: 20 ℃, will be made as to the direct voltage that upper electrode 34 applies 0V ,-500V ,-700V carries out etching in 60 seconds for three kinds.In Fig. 6, distribute in the face of the etch-rate of expression antireflection film at this moment.In addition, in Fig. 7, distribute in the face of the etch-rate of expression photoresist film at this moment.The distribution of the etching selectivity of the expression relative photoresist film of antireflection film at this moment in Fig. 8.
As shown in these figures as can be known, by changing the direct voltage that applies to upper electrode 34, the distribution of the etching characteristic of antireflection film changes.And, under the situation of this example, know that direct voltage has improved etch uniformity at-500V ,-700V, the inner evenness of etching selectivity is the highest.In the etching of the etch target film of substrate, antireflection film after photoresist film and the etching is carried out as mask, so, distribute by the etching characteristic of controlling such antireflection film, when this etch target film is carried out etching, can control CD and distribute, can improve the inner evenness of CD.
Below, the test of confirming this situation is described.Here, as shown in Figure 9, for on Si substrate 201, forming liner (liner) SiC202 (thickness 35nm), Low-k film 203 (thickness 320nm), DARC204 (thickness 50nm), antireflection film (BARC) 205 (thickness 80nm), the semiconductor wafer of the structure of the photoresist film that is patterned (PR) 206 (thickness 170nm), use the device of Fig. 1, at first, photoresist film (PR) 206 carried out etching as mask to antireflection film (BARC) 205, then, photoresist film 206 and antireflection film (BARC) 205 as mask, are carried out etching to DARC204 and Low-k film 203 as the etch target film.
Treatment conditions when antireflection film (BARC) 205 is carried out etching are: pressure: 13.3Pa (100mT), top high frequency power: 500W, bottom high frequency power: 400W, processing gas and flow: CF
4=150mL/min (standard state scaled value (sccm)), make the direct voltage that applies to upper electrode 0V and-500V changes, the processing time is 43sec.
Treatment conditions when in addition, Low-k film 203 and DARC204 being carried out etching are: pressure: 3.3Pa (25mT), top high frequency power: 400W, bottom high frequency power: 1000W, handle gas and flow: C
4F
8/ CH
2F
2/ CO/N
2=8/20/30/230mL/min (standard state scaled value (sccm)) does not carry out applying of direct voltage, and the processing time is 30sec.
In any etching, temperature is: lower electrode/upper electrode/wafer=20/60/60 ℃, the He gas of center and peripheral imports pressure and is respectively 2000Pa and 6000Pa.
Observation do not apply the situation of direct voltage and apply when antireflection film (BARC) 205 is carried out etching-cross section and the plane of center and peripheral under the situation of 500V direct voltage, the result can confirm: when antireflection film (BARC) 205 is carried out etching, to upper electrode apply-500V voltage can reduce the highest CD poor of center and peripheral.Specifically, under the situation that does not apply direct voltage, the CD of center and peripheral is respectively 64nm and 70nm, and is relative therewith, applying-situation of the direct voltage of 500V under, the CD of center and peripheral is respectively 63nm and 63nm.Can confirm thus: apply direct voltage to upper electrode and can improve the CD uniformity.And can confirm:, also can eliminate the uneven of etch depth by applying direct voltage.
Below, the plasma-etching method that utilizes the second embodiment of the invention that above-mentioned plasma-etching apparatus implements is described.
Here, the semiconductor wafer W of Fig. 3 structure of basically first execution mode being used is used as handled object.
At first, same with first execution mode, with gate valve 86 states of being made as out, take out of mouth 85 by moving into, the semiconductor wafer W that will have said structure is moved in the chamber 10, is positioned on the pedestal 16.Then, be used for antireflection film 104 is carried out etched processing gas to diffuser chamber 40 supplies with the flow of stipulating from handling gas supply source 66, supply with in the chamber 10 by gas stream through hole 41 and gas squit hole 37, utilize in 84 pairs of chambers 10 of exhaust apparatus on one side and carries out exhaust, wherein pressure is formed the set point in the scope of 0.1～150Pa for example.In addition, the temperature of pedestal is made as about 20 ℃.
Here, antireflection film 104 is carried out etched processing gas, can use the gas identical suitably, but also can adopt the existing all gases that uses with first execution mode as being used for.
Like this, in chamber 10, importing under the state of etching gas, apply the High frequency power of plasma generation usefulness to upper electrode 34 with the power of regulation from first high frequency electric source 48, simultaneously, apply the high frequency of ion introducing usefulness to pedestal 16 as lower electrode with the power of regulation from second high frequency electric source 90.Then, apply the direct voltage of regulation to upper electrode 34 from variable DC power supply 50.Then, apply the direct voltage that is used for electrostatic chuck 18 to the electrode 20 of electrostatic chuck 18, semiconductor wafer W is fixed on the pedestal 16 from DC power supply 22.
The processing gas that the gas squit hole 37 that forms from the battery lead plate 36 at upper electrode 34 sprays, at the upper electrode 34 that produces by High frequency power with as the glow discharge ionic medium bodyization between the pedestal 16 of lower electrode, by by free radical or ion that this plasma generated, the processed face of semiconductor wafer W is carried out etching.
Because High frequency power to upper electrode 34 supply high frequency zones (for example more than the 10MHz), so, can make the plasma densification with desirable state, both made more also can form high-density plasma under the condition of low pressure.
In addition, when forming plasma like this, apply the direct voltage of specified polarity and size to upper electrode 34 from variable DC power supply 50.In the present embodiment, can make the etched pattern size of antireflection film 104 than the little ormal weight of pattern dimension of described photoresist thus.That is, compare, can shrink the CD of (shrink) antireflection film 104 with the CD of photoresist 105.
Be described more specifically, in common etch processes, particularly under the situation of the little etch processes of the High frequency power that applies to upper electrode 34, for polymer easily attached to the state on the upper electrode 34.Under the state of such polymer attached, if apply direct voltage to upper electrode 34, just can the sputter polymer and supply as the semiconductor wafer W of handled object.That is, when antireflection film 104 is carried out etching, supply with polymer, thus, can be on the sidewall of etched part polymer attached, shrink CD.The polymer quantity delivered of this moment can be controlled to the direct voltage that upper electrode 34 applies by control.Therefore, by the control direct voltage, can control CD and shrink (shrink) amount with the polymer of desired amount attached to etched part.From this point of view, the direct voltage that applies to upper electrode 34, preferably-200～-scope of 1500V.
As above antireflection film 104 is carried out etching after, as mentioned above, with photoresist film 105 and antireflection film 104 as etching mask, when this etch target film 103 is carried out etching, etching condition, for example handle the kind of gas and flow, pressure, temperature etc. and be not particularly limited, can under common service condition, carry out.When this etching, obtained contraction (shrink) as the CD of the antireflection film 104 of etching mask, so, can carry out etching with the CD littler than the CD of photoetching.
When carrying out the plasma-etching method of present embodiment, semiconductor wafer for initial test usefulness, after the plasma-etching apparatus that utilizes Fig. 1 carries out etching with defined terms, from plasma-etching apparatus, take out semiconductor wafer, utilize testing fixture inspection, obtain the dc voltage value of the CD contraction that can obtain wishing in advance, this moment, one side was carried out etching on one side to the dc voltage value that upper electrode applies grasp, just can promptly carry out etch processes with appropriate condition.As the wafer of such test usefulness, can use a collection of initial a slice or the wafer more than two.
Below, the result of the effect of the method for confirming the second such execution mode is described.Here, as shown in figure 10, on Si substrate 301, forming liner (liner) SiC302 (thickness 30nm), Low-k film 303 (thickness 150nm), SiO
2The semiconductor wafer of the structure of film 304 (thickness 150nm), antireflection film (BARC) 305 (thickness 65nm), the photoresist film (PR) 306 (thickness 230nm) that is patterned, use the device of Fig. 1, at first, photoresist film (PR) 306 carried out etching as mask to antireflection film (BARC) 305, then, with photoresist film (PR) 306 and antireflection film (BARC) 305 as mask, to SiO as the etch target film
2Film 304 and Low-k film 303 carry out etching.
Treatment conditions when antireflection film (BARC) 305 is carried out etching are: pressure: 20.0Pa (150mT), top high frequency power: 400W, bottom high frequency power: 400W, processing gas and flow: CF
4=200mL/min (standard state scaled value (sccm)), make the direct voltage that applies to upper electrode 0V and-500V changes, the processing time is 50sec.
In addition, to SiO
2Treatment conditions when film 304 carries out etching are: pressure: 6.7Pa (50mT), top high frequency power: 300W, bottom high frequency power: 600W, processing gas and flow: CF
4/ CHF
3/ Ar=30/15/1000mL/min (standard state scaled value (sccm)) does not carry out applying of direct voltage, and the processing time is 90sec.
Treatment conditions when further, Low-k film 303 being carried out etching are: pressure: 6.7Pa (50mT), top high frequency power: 1000W, bottom high frequency power: 600W, processing gas and flow: CF
4/ Ar/N
2=30/1000/40mL/min (standard state scaled value (sccm)) does not carry out applying of direct voltage, and the processing time is 20sec.
In any etching, temperature is: lower electrode/upper electrode/wafer=20/60/60 ℃, the He gas of center and peripheral imports pressure and is respectively 2000Pa and 6000Pa.And interelectrode gap is 35mm.
Observation do not apply the situation of direct voltage and apply when antireflection film (BARC) 305 is carried out etching-cross section of center and peripheral under the situation of 500V direct voltage and the plane after the ashing, found that: when antireflection film (BARC) 305 is carried out etching, apply-500V voltage to upper electrode, compare with the situation that does not apply direct voltage, the resist residue film amount at center is increased to 159nm from 145nm, and the resist residue film amount at edge also is increased to 151nm from 113nm.And, by ashing, remove after photoresist film 306 and the antireflection film 305, about not applying the situation of direct voltage, the maximum at center (top) CD and minimum (bottom) CD are respectively 117nm and 107nm, the maximum at edge (top) CD and minimum (bottom) CD are respectively 115nm and 102nm, relative therewith, about having applied-the 500V voltage condition, maximum (top) CD and minimum (bottom) CD at the center are respectively 97nm and 85nm, maximum (top) CD and minimum (bottom) CD at the edge are respectively 95nm and 79nm, and CD has shunk about 20nm.
Can confirm by above content:, can shrink (shrink) CD significantly by when antireflection film 305 is carried out etching, applying direct voltage.And also can confirm: by applying direct voltage, supplied with PR polymer reinforced, the residue film amount of resist also increases, and simultaneously, vertical stripe also improves.
And, the invention is not restricted to above-mentioned execution mode, can carry out various distortion.For example, in the above-described embodiment,, Low-k film or SiO have been represented as the etch target film
2Film etc., but be not limited thereto.
In addition,, also be not limited to the device of Fig. 1, can use various devices shown below about being suitable for device of the present invention.For example, as shown in figure 11, also can use such plasma-etching apparatus, promptly from first high frequency electric source 48 ' apply the High frequency power that plasma generates for example 60MHz of usefulness to pedestal 16 as lower electrode, simultaneously, apply the plasma-etching apparatus of 2 frequency type from the bottom of High frequency power that second high frequency electric source 90 ' apply ion is introduced for example 2MHz of usefulness.As shown in the figure, variable DC power supply 166 is connected with upper electrode 234, applies the direct voltage of regulation, thus, can access the effect same with above-mentioned execution mode.
In addition, in this case, also can be as shown in figure 12, DC power supply 168 is connected with pedestal 16 as lower electrode, apply direct voltage to pedestal 16.
Further, as shown in figure 13, with upper electrode 234 ' by chamber 10 ground connection, high frequency electric source 170 is connected with pedestal 16 as lower electrode, apply the plasma-etching apparatus of type of High frequency power that plasma forms for example 13.56MHz of usefulness from this high frequency electric source 170, also can be suitable for, in this case, as shown in the figure, variable DC power supply 172 is connected with pedestal 16 as lower electrode, apply the direct voltage of regulation, thus, can obtain the effect identical with above-mentioned execution mode.
Further, as shown in Figure 14, upper electrode 234 that will be same with Figure 13 ' by chamber 10 ground connection, high frequency electric source 170 is connected with pedestal 16 as lower electrode, apply the Etaching device of type of High frequency power that plasma forms usefulness from this high frequency electric source 170, from variable DC power supply 174 to upper electrode 234 ' apply also passable.
Claims (14)
1. a plasma-etching method is used for the antireflection film that forms on handled object is carried out plasma etching, it is characterized in that, comprising:
In the container handling that is relatively set with first electrode and second electrode up and down, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film successively on the substrate and is patterned;
With the operation of handling in the gas importing container handling;
In described first electrode and second electrode any applies High frequency power, generates the operation of plasma; With
Apply the operation of direct voltage to described any electrode.
2. plasma-etching method according to claim 1 is characterized in that,
Described direct voltage is-200～-scope of 1500V.
3. a plasma-etching method is used for the antireflection film that forms on handled object is carried out plasma etching, it is characterized in that, comprising:
In the container handling that is relatively set with first electrode and second electrode up and down, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film successively on the substrate and is patterned;
With the operation of handling in the gas importing container handling;
In described first electrode and second electrode any applies High frequency power, generates the operation of plasma; With
When generating described plasma, apply the direct voltage of regulation to described any electrode, make the operation that the CD that can obtain wishing distributes when thereafter the etch target film of substrate being carried out etching.
4. plasma-etching method according to claim 3 is characterized in that,
Described direct voltage is-200～-scope of 1500V.
5. plasma-etching method according to claim 3 is characterized in that,
Handled object at test usefulness, obtain the dc voltage value of the CD distribution that when the etch target film to substrate carries out etching, can obtain wishing in advance, apply the dc voltage value of this moment to described any electrode, thereby apply the operation of the direct voltage of described regulation.
6. a plasma-etching method is used for the antireflection film that forms on handled object is carried out plasma etching, it is characterized in that, comprising:
In the container handling that is relatively set with first electrode and second electrode up and down, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film successively on the substrate and is patterned;
With the operation of handling in the gas importing container handling;
Any applies High frequency power in described first electrode and second electrode, generates plasma, and described photoresist film as mask, is carried out etched operation to described antireflection film; With
When described etching, apply the direct voltage of setting to any electrode, make the etched pattern size of described antireflection film than the operation of the little ormal weight of pattern dimension of described photoresist film.
7. a plasma-etching method is characterized in that, comprising:
In the container handling that is relatively set with first electrode and second electrode, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film successively on the substrate and is patterned;
With the operation of handling in the gas importing container handling;
Any applies High frequency power in described first electrode and second electrode, generates plasma and carries out etched operation;
When described etching, apply the direct voltage of setting to any electrode, make the etched pattern size of described antireflection film than the operation of the little ormal weight of pattern dimension of described photoresist film; With
The antireflection film that will be formed with the etched pattern littler than the pattern dimension of described resist film with the pattern dimension littler than the pattern dimension of described photoresist, carries out etched operation to described etch target film as etching mask.
8. plasma-etching method according to claim 6 is characterized in that,
Described direct voltage is-200～-scope of 1500V.
9. plasma-etching method according to claim 6 is characterized in that,
At the handled object of test usefulness, obtain the dc voltage value that the pattern dimension that makes described antireflection film becomes the size of hope in advance, apply the dc voltage value of this moment to described any electrode.
10. plasma-etching method according to claim 1 is characterized in that,
Described first electrode is a upper electrode, and described second electrode is the lower electrode of mounting handled object, applies High frequency power and the described direct voltage that is used to generate described plasma to described first electrode.
11. plasma-etching method according to claim 6 is characterized in that,
Described first electrode is a upper electrode, and described second electrode is the lower electrode of mounting handled object, applies High frequency power and the described direct voltage that is used to generate described plasma to described first electrode.
12. plasma-etching method according to claim 10 is characterized in that,
Apply the High frequency power that ion is introduced usefulness to described second electrode.
13. the storage medium of an embodied on computer readable stores the control program of operation on computers, it is characterized in that,
Described control program makes the computer control plasma processing apparatus in when operation, carry out claim 1 to 12 in each described plasma-etching method.
14. a plasma-etching apparatus possesses control and carries out the control unit of following plasma-etching method and the storage medium of embodied on computer readable,
Described plasma-etching method is used for the antireflection film that forms on handled object is carried out plasma etching, comprising:
In the container handling that is relatively set with first electrode and second electrode up and down, be configured in the operation of the handled object of the photoresist film that is formed with etch target film, antireflection film successively on the substrate and is patterned;
With the operation of handling in the gas importing container handling;
In described first electrode and second electrode any applies High frequency power, generates the operation of plasma; With
Apply the operation of direct voltage to described any electrode,
Wherein, described first electrode is a upper electrode, and described second electrode is the lower electrode of mounting handled object, applies High frequency power and the described direct voltage that is used to generate described plasma to described first electrode, apply the High frequency power that ion is introduced usefulness to described second electrode
The storage medium of described embodied on computer readable stores on computers the control program of operation, and described control program makes the computer control plasma processing apparatus when operation, carry out claim 1 to 12 in each described plasma-etching method.
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| CN101971713A (en) * | 2008-03-13 | 2011-02-09 | 应用材料公司 | Electrical control of plasma uniformity using external circuit |
| CN101800161B (en) * | 2009-01-26 | 2013-08-21 | 东京毅力科创株式会社 | Plasma etching method and plasma etching apparatus |
| CN110783190A (en) * | 2018-07-27 | 2020-02-11 | 东京毅力科创株式会社 | Plasma processing method and plasma processing apparatus |
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| JP5065787B2 (en) * | 2007-07-27 | 2012-11-07 | 東京エレクトロン株式会社 | Plasma etching method, plasma etching apparatus, and storage medium |
| JP5578782B2 (en) * | 2008-03-31 | 2014-08-27 | 東京エレクトロン株式会社 | Plasma processing method and computer-readable storage medium |
| JP5213496B2 (en) * | 2008-03-31 | 2013-06-19 | 東京エレクトロン株式会社 | Plasma etching method and computer-readable storage medium |
| JP5378706B2 (en) * | 2008-05-22 | 2013-12-25 | 東京エレクトロン株式会社 | Plasma processing apparatus and processing gas supply apparatus used therefor |
| US8232199B2 (en) | 2010-07-01 | 2012-07-31 | Samsung Electronics Co., Ltd. | Method of fabricating semiconductor device comprises a photoresist pattern having a desired critical dimension |
| TWI502617B (en) | 2010-07-21 | 2015-10-01 | 應用材料股份有限公司 | Method,plasma processing apparatus ,and liner assembly for tuning electrical skews |
| US9786471B2 (en) | 2011-12-27 | 2017-10-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma etcher design with effective no-damage in-situ ash |
| JP7595431B2 (en) * | 2020-07-21 | 2024-12-06 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
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| JP4831853B2 (en) * | 1999-05-11 | 2011-12-07 | 東京エレクトロン株式会社 | Capacitively coupled parallel plate plasma etching apparatus and plasma etching method using the same |
| US6364958B1 (en) * | 2000-05-24 | 2002-04-02 | Applied Materials, Inc. | Plasma assisted semiconductor substrate processing chamber having a plurality of ground path bridges |
| CN1277293C (en) * | 2001-07-10 | 2006-09-27 | 东京毅力科创株式会社 | Dry etching method |
| JP4584565B2 (en) * | 2002-11-26 | 2010-11-24 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
| JP2004207286A (en) * | 2002-12-24 | 2004-07-22 | Sony Corp | Dry etching method and method of manufacturing semiconductor device |
| JP4722550B2 (en) * | 2004-06-16 | 2011-07-13 | 東京エレクトロン株式会社 | Manufacturing method of semiconductor device |
| CN102263001B (en) * | 2004-06-21 | 2016-08-03 | 东京毅力科创株式会社 | Plasma processing apparatus and method |
| US7740737B2 (en) * | 2004-06-21 | 2010-06-22 | Tokyo Electron Limited | Plasma processing apparatus and method |
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| CN101971713A (en) * | 2008-03-13 | 2011-02-09 | 应用材料公司 | Electrical control of plasma uniformity using external circuit |
| CN101800161B (en) * | 2009-01-26 | 2013-08-21 | 东京毅力科创株式会社 | Plasma etching method and plasma etching apparatus |
| CN110783190A (en) * | 2018-07-27 | 2020-02-11 | 东京毅力科创株式会社 | Plasma processing method and plasma processing apparatus |
| CN110783190B (en) * | 2018-07-27 | 2024-05-28 | 东京毅力科创株式会社 | Plasma processing method and plasma processing apparatus |
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