CN101018429A - Capacitor micro silicon microphone and making method - Google Patents
Capacitor micro silicon microphone and making method Download PDFInfo
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- CN101018429A CN101018429A CN 200710037821 CN200710037821A CN101018429A CN 101018429 A CN101018429 A CN 101018429A CN 200710037821 CN200710037821 CN 200710037821 CN 200710037821 A CN200710037821 A CN 200710037821A CN 101018429 A CN101018429 A CN 101018429A
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- silicon microphone
- capacitance type
- vibrating membrane
- pole plate
- type minitype
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 64
- 239000010703 silicon Substances 0.000 title claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
- 239000012528 membrane Substances 0.000 claims description 58
- 238000009413 insulation Methods 0.000 claims description 25
- 238000002360 preparation method Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000003518 caustics Substances 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 239000004020 conductor Substances 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 238000013461 design Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- -1 silicon nitrides Chemical class 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
Abstract
The disclosed capacitor-type minitype silicon microphone comprises: a conductive back pole plate to form one pole of a capacitor, a conductive vibrating diaphragm to form another pole for the capacitor, an insulative support body between former two members acting on middle of the diaphragm, and multiple metal pressing points formed on the diaphragm and plate respectively. This invention reduces chip area and diaphragm sensitivity to residual stress, and increases design flexibility.
Description
Technical field
The invention belongs to microelectromechanical systems (MEMS) field, be specifically related to a kind of capacitance type minitype silicon microphone and preparation method thereof based on silicon technology.
Background technology
The MEMS technology is a new and high technology of high speed development in recent years, compare with traditional respective devices, the MEMS device is in volume, power consumption, weight and obvious advantages is all arranged in price, and it adopts advanced semiconductor fabrication process, can realize the batch manufacturing of MEMS device, in the market, the main application example of MEMS device comprises that pressure sensor, acceleration take into account silicon microphone etc.
For silicon microphone, it is assembled to circuit board adopts automation surface attachment process usually, this technology need experience high temperature, and the electric charge leakage at high temperature can take place traditional electret microphone (ECM), cause ECM to lose efficacy, so the assembling of ECM can only be adopted hand assembled.And capacitance type minitype silicon microphone can withstand high temperatures, so can adopt surface mount process to realize automatic assembling, capacitance type minitype silicon microphone all has superiority than ECM at aspects such as miniaturization, performance, reliability, environmental resistance, cost and volume production abilities in addition, therefore adopts the micro silicon microphone of MEMS technology manufacturing to begin to capture consumption electronic product markets such as mobile phone, PDA, MP3 and hearing aids as the substitute of ECM rapidly.
Though the research of micro silicon microphone carried out more than two decades, the method of specific implementation capacitance type minitype silicon microphone is a lot, but capacitance type minitype silicon microphone generally include one around the small air gap of vibrating membrane, back pole plate that has hole and the between fixed.Vibrating membrane adopts usually that conventional semiconducter process---deposit obtains, and material can adopt multiple or multilayer material obtains (such as doped polycrystalline silicon, metal and silicon nitride composite membrane etc.); Back pole plate can obtain by silicon substrate or by deposit, and material also can adopt multiple or multilayer material (such as doped polycrystalline silicon, metal and silicon nitride composite membrane etc.); Small air-gap can be corroded by sacrifice layer and obtain after removing, and sacrificial layer material can adopt multiple material (as silica, silicon etc.).
But, the control that subject matter is exactly vibrating film stress that micro silicon microphone faces in making.Existing film preparation means adopt deposit substantially, and can there be bigger residual stress in the vibrating membrane that obtains by deposit, generally includes two kinds of thermal mismatch stress and intrinsic stresses.Residual stress has considerable influence to the micro silicon microphone characteristic, when serious even its inefficacy can not be worked.Have, big tensile residual stresses also can significantly reduce the mechanical sensitivity of vibrating membrane again, and the mechanical sensitivity of vibrating membrane and microphone key index---sensitivity is directly proportional, therefore big residual stress will cause the reduction of sensitivity of microphone indirectly.Also have, big residual compressive stress also may cause vibrating membrane generation flexing, thereby makes the unstable even inefficacy of microphone property.
Therefore, improve sensitivity of microphone and become the focus that those skilled in the art pay close attention to, by adopting the method for the process conditions of improving preparation method's deposit, or adopt some additional process such as annealing to wait the residual stress that reduces vibrating membrane, but adopt this method little to the effect that reduces residual stress, and repeatability is bad, realizes also comparatively complicated; The another one important channel is optimized the vibrating membrane structure Design exactly, makes the mechanical sensitivity of vibrating membrane insensitive to residual stress, but this kind mode often causes the processing technology complexity to increase.
Therefore, how to solve that shortcoming that prior art exists is real to have become the technical task that those skilled in the art need to be resolved hurrily.
Summary of the invention
The object of the present invention is to provide a kind of capacitance type minitype silicon microphone, with sufficient release residual stress, and then the sensitivity that improves micro silicon microphone, the while also can effectively reduce the size of micro silicon microphone.
Another object of the present invention is to provide a kind of capacitance type minitype silicon microphone preparation method, to realize that different processing batch micro silicon microphone performances that obtain have better uniformity and consistency, simultaneously to realize reducing owing to encapsulate the influence that the stress introduced causes sensitivity.
In order to achieve the above object, the invention provides a kind of capacitance type minitype silicon microphone, it comprises: be used to form a utmost point of electric capacity and have conducting function back pole plate, be used to form another utmost point of described electric capacity and have conducting function vibrating membrane, be used for the insulation supporting role between described vibrating membrane and the described back pole plate and be supported on described vibrating membrane the middle part insulation support body and be respectively formed at described vibrating membrane and described back pole plate on a plurality of metal pressure points.
Wherein, described back pole plate is provided with the hole a plurality of, described back pole plate opposite side has back of the body chamber, the material of described back pole plate and described vibrating membrane is respectively electric conducting material and a kind of by in the composite membrane of electric conducting material and insulating material combination, the material of described metal pressure point is aluminium, gold or other metal, described vibrating membrane is square, circular or other shape, and described vibrating membrane can offer narrow groove.
The present invention also provides a kind of preparation method of capacitance type minitype silicon microphone, and it comprises step: 1) carry out heavy doping to form back pole plate in substrate one side of semi-conducting material; 2) on described back pole plate the deposit megohmite insulant to form insulation support layer; 3) on described insulation support layer the deposit conductive materials to form vibrating membrane; 4) on described vibrating membrane and described back pole plate, carry out photoetching and etching respectively to form a plurality of metal pressure points; 5) adopt first corrosive substance to corrode described insulation support layer is positioned at described vibrating membrane middle part with formation insulation support body.
Wherein, also comprise step: (1) carries out photoetching and etching with formation sound hole on described back pole plate; (2) carry out photoetching and adopt second corrosive substance to corrode to obtain carrying on the back the chamber at described substrate opposite side, described second corrosive substance is KOH, and described first corrosive substance is a hydrofluoric acid, and described megohmite insulant is silica or phosphorosilicate glass (PSG).
In sum, capacitance type minitype silicon microphone of the present invention and preparation method adopt around vibrating membrane not fixed support and only form supporter at the middle part, can fully discharge residual stress, and then the sensitivity that can improve micro silicon microphone, simultaneously under same sensitivity specification, can reduce the size of micro silicon microphone, have again, also can in difference processing batch, obtain uniformity and the better micro silicon microphone of consistency, and owing to encapsulate the stress of introducing and also can reduce the influence that sensitivity causes.
Description of drawings
Fig. 1 to Fig. 3 is the schematic diagram of the embodiment one of capacitance type minitype silicon microphone of the present invention, wherein, Fig. 1 is the perspective view of capacitance type minitype silicon microphone of the present invention, Fig. 2 is the profile perspective of capacitance type minitype silicon microphone of the present invention, and Fig. 3 is the profile of capacitance type minitype silicon microphone of the present invention.
Fig. 4 to Fig. 6 is the schematic diagram of the embodiment two of capacitance type minitype silicon microphone of the present invention, wherein, Fig. 4 is the perspective view of capacitance type minitype silicon microphone of the present invention, Fig. 5 is the profile perspective of capacitance type minitype silicon microphone of the present invention, and Fig. 6 is the profile of capacitance type minitype silicon microphone of the present invention
Embodiment
Execution mode one:
See also Fig. 1 to Fig. 3, capacitance type minitype silicon microphone of the present invention comprises: back pole plate, vibrating membrane, insulation support body and metal pressure point etc.
Described back pole plate 2 has conducting function, be used to form a utmost point of electric capacity, during making, on silicon substrate, form back of the body chamber 7 by isotropism or anisotropy processing method earlier, combination can form back pole plate 2 from stopping technology (as heavy doping) when obtaining carrying on the back chamber 7 then, wherein, substrate 1 can be a low-resistance silicon, or the glass of metal covering surfaces is arranged, play the mechanical support effect, on back pole plate 2, can obtain hole 3 a plurality of by means such as employing selective doping or photoetching again, a plurality of the effect of propagating acoustic pressure and regulating damping between vibrating membrane and the back pole plate can be played in hole 3, the shape in sound hole, size and quantity determine that as required general sound hole is circular or square, and its shape by vibrating membrane is arranged into array.Vibrating membrane 4 has conducting function, be used to form another utmost point of described electric capacity, it can be formed by monocrystalline silicon, polysilicon or the silicon nitride that is covered with conductive layer etc., be square, vibrating membrane 4 is unfixing around it, the mechanical support of vibrating membrane 4 is linked to each other to fetch with back pole plate at the vibrating membrane middle part by the insulation support body 6 that plays the insulation supporting role and finishes, insulation support body 6 can be by insulating material such as silicon dioxide or silicon nitrides independent or compound the composition, in the present embodiment, described insulation support body 6 is two cylinders.In addition, between vibrating membrane 4 and the back pole plate 2 except that insulation articulamentum 6, also have air-gap 8, this air-gap can obtain by etching insulating layer, simultaneously, be formed with a plurality of metal pressure points 5 respectively on described vibrating membrane and described back pole plate, described metal pressure point 5 can adopt metals such as aluminium, gold.
Execution mode two:
See also Fig. 4, Fig. 5 and Fig. 6, present embodiment and execution mode one are similar, and substrate 9 can be a monocrystalline silicon piece, or the glass of metal covering surfaces is arranged, and plays the mechanical support effect; Vibrating membrane 12 can be formed by silicon, polysilicon, the silicon nitride etc. that is covered with conductive layer, vibrating membrane 12 is unfixing all around, the mechanical support of vibrating membrane 12 is linked to each other to fetch with back pole plate at the vibrating membrane middle part by the insulating barrier 13 that plays the insulation supporting role and finishes, insulating barrier 13 can be by insulating material such as silicon dioxide or silicon nitrides independent or compound the composition.
On silicon substrate, form back of the body chamber 16 by isotropism or anisotropy processing method, combination can obtain back pole plate 10 from stopping technology (as heavy doping) when obtaining carrying on the back the chamber, by adopting means such as selective doping or photoetching can obtain hole 11, the effect of propagating acoustic pressure and regulating damping between vibrating membrane and the back pole plate can be played in sound hole 11, and shape, size and the quantity in sound hole are determined as required.Between vibrating membrane 12 and the back pole plate 10 except that insulation articulamentum 13, also have air-gap 17, this air-gap can obtain by etching insulating layer.14 is the metal pressure point, can adopt metals such as aluminium, gold.
The place different with embodiment 1 be vibrating membrane for circular and its on have narrow groove 15, increase narrow groove can obtain more design flexibility, the shape of narrow groove, size, quantity can be determined as required.
Capacitance type minitype silicon microphone preparation method of the present invention mainly may further comprise the steps:
1) carries out heavy doping to form back pole plate in substrate one side of semi-conducting material, promptly on substrate 1, inject or diffusion P+ ion formation heavily doped silicon, to constitute back pole plate 2.
2) on back pole plate 2, carry out photoetching and etching, thereby on back pole plate 2, obtain hole 3.
3) the deposit megohmite insulant is to form insulation support layer on described back pole plate, and described megohmite insulant is silica or PSG.
4) the deposit conductive materials is to form vibrating membrane on described insulation support layer, and normally the deposit polysilicon obtains vibrating membrane 4 on insulation support layer 6.
5) carry out photoetching and etching respectively to form a plurality of metal pressure points on described vibrating membrane and described back pole plate, also deposit on vibrating membrane 4 and substrate 2, photoetching, etching metal obtain metal pressure point 5.
6) described back pole plate opposite side carries out photoetching and adopts second corrosive substance to corrode to obtain carrying on the back the chamber, adopts KOH as second corrosive substance usually.
7) adopt first corrosive substance to corrode described insulation support layer and be positioned at the insulation support body at described vibrating membrane middle part with formation, described first corrosive substance is a hydrofluoric acid.
In sum, capacitance type minitype silicon microphone of the present invention and preparation method adopt around the vibrating membrane not fixed support, and only the insulation support body by being positioned at the vibrating membrane middle part is supported on micro silicon microphone structure on the back pole plate with it.This structure adopts conventional processing technology to prepare, and adopts this structural vibrations film can discharge residual stress fully, and its advantage is: the first, and the sensitivity that can improve micro silicon microphone; The second, under the same sensitivity specification, reduce the size of micro silicon microphone; The 3rd, different processing batch micro silicon microphone performances that obtain have better uniformity and consistency; The 4th, the stress of introducing owing to encapsulation reduces the influence that sensitivity causes.
Claims (14)
1. capacitance type minitype silicon microphone is characterized in that comprising:
Back pole plate with conducting function is used to form the utmost point of electric capacity;
Vibrating membrane with conducting function is used to form another utmost point of described electric capacity;
Insulation support body is formed between described vibrating membrane and the described back pole plate, and is supported on the middle part of described vibrating membrane;
A plurality of metal pressure points are respectively formed on described vibrating membrane and the described back pole plate.
2. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: described back pole plate is provided with the hole a plurality of.
3. capacitance type minitype silicon microphone as claimed in claim 2 is characterized in that: described a plurality of holes are for circular or square, and its shape by vibrating membrane is arranged into array.
4. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: described back pole plate opposite side has back of the body chamber.
5. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: the material of described back pole plate and described vibrating membrane is respectively electric conducting material and a kind of by in the composite membrane of electric conducting material and insulating material combination.
6. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: the material of described metal pressure point is aluminium or gold.
7. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: described vibrating membrane is square or is circular.
8. capacitance type minitype silicon microphone as claimed in claim 1 is characterized in that: described vibrating membrane offers narrow groove.
9. the preparation method of a capacitance type minitype silicon microphone is characterized in that comprising step:
1) carries out heavy doping to form back pole plate in substrate one side of semi-conducting material;
2) on described back pole plate the deposit megohmite insulant to form insulation support layer;
3) on described insulation support layer the deposit conductive materials to form vibrating membrane;
4) on described vibrating membrane and described back pole plate, carry out photoetching and etching respectively to form a plurality of metal pressure points;
5) adopt first corrosive substance to corrode described insulation support layer is positioned at described vibrating membrane middle part with formation insulation support body.
10. the preparation method of capacitance type minitype silicon microphone as claimed in claim 9 is characterized in that also being included in and carries out photoetching and the etching step with formation sound hole on the described back pole plate.
11. the preparation method of capacitance type minitype silicon microphone as claimed in claim 9 is characterized in that also being included in described substrate opposite side and carries out photoetching and adopt second corrosive substance to corrode to obtain carrying on the back the step in chamber.
12. the preparation method of capacitance type minitype silicon microphone as claimed in claim 12 is characterized in that: described second corrosive substance is KOH.
13. the preparation method of capacitance type minitype silicon microphone as claimed in claim 9 is characterized in that: described first corrosive substance is a hydrofluoric acid.
14. the preparation method of capacitance type minitype silicon microphone as claimed in claim 9 is characterized in that: described megohmite insulant is silica or phosphorosilicate glass (PSG).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710037821 CN101018429A (en) | 2007-03-05 | 2007-03-05 | Capacitor micro silicon microphone and making method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200710037821 CN101018429A (en) | 2007-03-05 | 2007-03-05 | Capacitor micro silicon microphone and making method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101959108A (en) * | 2010-05-04 | 2011-01-26 | 瑞声声学科技(深圳)有限公司 | miniature microphone |
| CN102056062A (en) * | 2009-10-29 | 2011-05-11 | 苏州敏芯微电子技术有限公司 | Capacitor-type micro silicon microphone and manufacturing method thereof |
| CN102056061A (en) * | 2009-10-29 | 2011-05-11 | 苏州敏芯微电子技术有限公司 | Capacitive miniature silicon microphone and manufacturing method thereof |
| CN102158788A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro-electromechanical Systems) microphone and formation method thereof |
| CN102196352A (en) * | 2011-05-19 | 2011-09-21 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon microphone |
| CN102264019A (en) * | 2010-05-26 | 2011-11-30 | 国立清华大学 | Micro-electromechanical capacitance microphone |
| CN102264020A (en) * | 2010-05-26 | 2011-11-30 | 国立清华大学 | MEMS Condenser Microphone |
| WO2012122872A1 (en) * | 2011-03-15 | 2012-09-20 | 迈尔森电子（天津）有限公司 | Mems microphone and integrated pressure sensor and manufacturing method therefor |
| WO2012163285A1 (en) * | 2011-05-31 | 2012-12-06 | 新奥科技发展有限公司 | Gas meter |
| CN102124549B (en) * | 2008-09-12 | 2013-10-23 | 欧姆龙株式会社 | Semiconductor device |
| CN104602172A (en) * | 2013-10-30 | 2015-05-06 | 北京卓锐微技术有限公司 | Capacitive microphone and preparation method thereof |
| CN105959890A (en) * | 2015-03-09 | 2016-09-21 | 因文森斯公司 | Mems acoustic sensor comprising a non-perimeter flexible member |
| CN107005772A (en) * | 2014-11-13 | 2017-08-01 | 因文森斯公司 | Form the integration packaging and manufacture method of wide sensing gap MEMS condenser microphone |
| CN108235203A (en) * | 2017-12-11 | 2018-06-29 | 钰太芯微电子科技（上海）有限公司 | A kind of method and microphone apparatus of adaptive tracing bias voltage |
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- 2007-03-05 CN CN 200710037821 patent/CN101018429A/en active Pending
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| CN102124549B (en) * | 2008-09-12 | 2013-10-23 | 欧姆龙株式会社 | Semiconductor device |
| CN102056062A (en) * | 2009-10-29 | 2011-05-11 | 苏州敏芯微电子技术有限公司 | Capacitor-type micro silicon microphone and manufacturing method thereof |
| CN102056061A (en) * | 2009-10-29 | 2011-05-11 | 苏州敏芯微电子技术有限公司 | Capacitive miniature silicon microphone and manufacturing method thereof |
| CN101959108A (en) * | 2010-05-04 | 2011-01-26 | 瑞声声学科技(深圳)有限公司 | miniature microphone |
| CN101959108B (en) * | 2010-05-04 | 2013-12-25 | 瑞声声学科技(深圳)有限公司 | Miniature microphone |
| CN102264020B (en) * | 2010-05-26 | 2013-12-25 | 国立清华大学 | MEMS Condenser Microphone |
| CN102264019A (en) * | 2010-05-26 | 2011-11-30 | 国立清华大学 | Micro-electromechanical capacitance microphone |
| CN102264020A (en) * | 2010-05-26 | 2011-11-30 | 国立清华大学 | MEMS Condenser Microphone |
| WO2012122869A1 (en) * | 2011-03-15 | 2012-09-20 | 迈尔森电子（天津）有限公司 | Mems microphone and forming method therefor |
| WO2012122872A1 (en) * | 2011-03-15 | 2012-09-20 | 迈尔森电子（天津）有限公司 | Mems microphone and integrated pressure sensor and manufacturing method therefor |
| CN102158788A (en) * | 2011-03-15 | 2011-08-17 | 迈尔森电子（天津）有限公司 | MEMS (Micro-electromechanical Systems) microphone and formation method thereof |
| CN102158788B (en) * | 2011-03-15 | 2015-03-18 | 迈尔森电子（天津）有限公司 | MEMS (Micro-electromechanical Systems) microphone and formation method thereof |
| CN102196352A (en) * | 2011-05-19 | 2011-09-21 | 瑞声声学科技(深圳)有限公司 | Manufacturing method of silicon microphone |
| WO2012163285A1 (en) * | 2011-05-31 | 2012-12-06 | 新奥科技发展有限公司 | Gas meter |
| CN104602172A (en) * | 2013-10-30 | 2015-05-06 | 北京卓锐微技术有限公司 | Capacitive microphone and preparation method thereof |
| CN107005772A (en) * | 2014-11-13 | 2017-08-01 | 因文森斯公司 | Form the integration packaging and manufacture method of wide sensing gap MEMS condenser microphone |
| CN105959890A (en) * | 2015-03-09 | 2016-09-21 | 因文森斯公司 | Mems acoustic sensor comprising a non-perimeter flexible member |
| CN108235203A (en) * | 2017-12-11 | 2018-06-29 | 钰太芯微电子科技（上海）有限公司 | A kind of method and microphone apparatus of adaptive tracing bias voltage |
| CN109688492A (en) * | 2018-12-28 | 2019-04-26 | 上海创功通讯技术有限公司 | Sound pickup device and electronic equipment |
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