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CN101007631A - Mono-layer carbon nanotube and its preparation method, and electronic element preparation method - Google Patents

Mono-layer carbon nanotube and its preparation method, and electronic element preparation method Download PDF

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CN101007631A
CN101007631A CN 200610002907 CN200610002907A CN101007631A CN 101007631 A CN101007631 A CN 101007631A CN 200610002907 CN200610002907 CN 200610002907 CN 200610002907 A CN200610002907 A CN 200610002907A CN 101007631 A CN101007631 A CN 101007631A
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alcohol
carbon nanotubes
walled carbon
aqueous solution
preparing
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王钰
付磊
刘云圻
梶浦尚志
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Sony Corp
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Sony Corp
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Abstract

提供一种单层碳纳米管的制备方法,该方法是一种可以很容易地制备出结构可控的高品质单层碳纳米管,并且可以制备直径极其小的单层碳纳米管、且直径分布范围可控的单层碳纳米管的方法。使用通过气化乙醇等的醇或醇的水溶液而得到的气体作为反应气体,利用化学气相沉积法,在常压下使单层碳纳米管生长。通过将在化学气相沉积装置的反应部位的外部利用自然蒸发等来气化醇或醇的水溶液而得到的气体导入该反应部位来进行反应。醇的水溶液中醇浓度范围为50%~95%。还提供一种通过该方法制备的单层碳纳米管以及利用该单层碳纳米管制备电子元件的方法。

Provided is a method for preparing single-layer carbon nanotubes, which is a method that can easily prepare high-quality single-layer carbon nanotubes with controllable structures, and can prepare single-layer carbon nanotubes with extremely small diameters, and the diameter A method for single-walled carbon nanotubes with a controllable distribution range. Single-walled carbon nanotubes are grown under normal pressure by chemical vapor deposition using a gas obtained by vaporizing alcohol such as ethanol or an aqueous solution of alcohol as a reaction gas. The reaction is carried out by introducing a gas obtained by vaporizing alcohol or an aqueous solution of alcohol by natural evaporation or the like outside the reaction site of the chemical vapor deposition apparatus into the reaction site. The concentration of alcohol in the aqueous alcohol solution ranges from 50% to 95%. Also provided are a single-layer carbon nanotube prepared by the method and a method for preparing an electronic component by using the single-layer carbon nanotube.

Description

单层碳纳米管及其制备方法、以及电子元件的制备方法Single-walled carbon nanotubes, preparation method thereof, and preparation method of electronic components

技术领域technical field

本发明涉及单层碳纳米管的制备方法、单层碳纳米管以及电子元件的制备方法,例如,较佳地应用于使用单层碳纳米管的各种电子元件中。The present invention relates to a method for preparing single-walled carbon nanotubes, a method for preparing single-walled carbon nanotubes and electronic components, for example, preferably applied to various electronic components using single-walled carbon nanotubes.

背景技术Background technique

单层碳纳米管(SWNT)具有特有的电、机械、电光学以及电机械特性,因此,一直以来都被视作场致发射元件、场效应晶体管、单电子晶体管、分子传感器等未来纳米电子元件的吸引人的结构单元(例如,参照非专利文献1~5)。为了实现那样吸引人的应用,必然期望制备具有被控制的结构的高品质单层碳纳米管。为了制备单层碳纳米管,过去10年间人们付出了大量努力,为了高收率且低成本地制备高品质的单层碳纳米管,开发了各种技术,包括:电弧放电(例如,参照非专利文献6)、激光烧蚀(例如,参照非专利文献7)以及化学气相沉积(CVD)(例如,参照非专利文献8~10)。单层碳纳米管的应用(例如,参照非专利文献11)以及基础科学(例如,参照非专利文献12~16),在制备上要求新的途径以及适应性。Single-walled carbon nanotubes (SWNTs) have unique electrical, mechanical, electro-optical and electro-mechanical properties, so they have always been regarded as future nanoelectronic components such as field emission devices, field effect transistors, single-electron transistors, and molecular sensors. Attractive structural units (for example, refer to Non-Patent Documents 1 to 5). In order to realize such attractive applications, it is necessarily desirable to prepare high-quality single-walled carbon nanotubes with a controlled structure. In order to prepare single-walled carbon nanotubes, a lot of effort has been put into the past 10 years. Various techniques have been developed to produce high-quality single-walled carbon nanotubes in high yields and at low cost, including: arc discharge (for example, refer to Non- Patent Document 6), laser ablation (for example, refer to Non-Patent Document 7), and chemical vapor deposition (CVD) (for example, refer to Non-Patent Documents 8 to 10). Applications of single-walled carbon nanotubes (for example, see Non-Patent Document 11) and basic science (for example, see Non-Patent Documents 12 to 16) require new routes and flexibility in production.

上述CVD法通常被认为是以低成本制备高品质的单层碳纳米管的一个有力的方法。因此,为了通过探索催化剂的组成、载体/基板材料、反应温度以及碳源气体,使CVD法最优化,人们集中地进行了大量研究(例如,参照非专利文献17~20)。最近报道了乙醇是用以在减压条件下通过CVD法制备高品质的单层碳纳米管的理想碳源(例如,参照非专利文献21~23)。另外,还提出了通过使由具有氧原子的化合物形成的碳源或具有氧原子的化合物和具有碳原子的化合物的混合物在加热温度下与催化剂接触,在减压条件下,利用CVD法制备单层碳纳米管的方法,作为上述碳源的例子,可以列举乙醇等的醇类或醚类;作为上述混合物的例子,可以列举水与乙炔等烃的混合物,或者NOx、SOx与乙炔等烃的混合物等(例如,参照专利文献1)。The above-mentioned CVD method is generally regarded as a powerful method for preparing high-quality single-walled carbon nanotubes at low cost. Therefore, many studies have been intensively conducted to optimize the CVD method by exploring the catalyst composition, carrier/substrate material, reaction temperature, and carbon source gas (see, for example, Non-Patent Documents 17 to 20). Recently, it has been reported that ethanol is an ideal carbon source for producing high-quality single-walled carbon nanotubes by CVD under reduced pressure (see, for example, Non-Patent Documents 21 to 23). In addition, it has also been proposed that a carbon source formed from a compound having an oxygen atom or a mixture of a compound having an oxygen atom and a compound having a carbon atom be brought into contact with a catalyst at a heating temperature, and under reduced pressure, the preparation of a single The method of layering carbon nanotubes, as the example of above-mentioned carbon source, can enumerate alcohols such as ethanol or ethers; As the example of above-mentioned mixture, can enumerate the mixture of water and hydrocarbons such as acetylene, or the mixture of NOx , SOx and acetylene etc. A mixture of hydrocarbons, etc. (for example, refer to Patent Document 1).

【非专利文献1】【Non-Patent Document 1】

Dresselhaus,M.S.;Dresslhaus,G.;Eklund,P.C.,Science ofFullerenes and Carbon Nanotubes;Academic Press:San Diego,1996Dresselhaus, M.S.; Dresslhaus, G.; Eklund, P.C., Science of Fullerenes and Carbon Nanotubes; Academic Press: San Diego, 1996

【非专利文献2】【Non-Patent Document 2】

Hafner,J.H.;Cheung,C.L.;Oosterkamp,T.H.;Lieber,C.M.,J.Phys.Chem.B.2001,105,743Hafner, J.H.; Cheung, C.L.; Oosterkamp, T.H.; Lieber, C.M., J.Phys.Chem.B. 2001, 105, 743

【非专利文献3】【Non-Patent Document 3】

Postma,H.W.Ch.;Teepen,T.;Yao,Z.;Grifoni,M.;Dekker,C.,Science 2001,293,76Postma, H.W.Ch.; Teepen, T.; Yao, Z.; Grifoni, M.; Dekker, C., Science 2001, 293, 76

【非专利文献4】【Non-Patent Document 4】

Javey,A.;Guo,J.;Wang,Q.;Lundstrom,M.;Dai,H.,Nature,2003,424,654Javey, A.; Guo, J.; Wang, Q.; Lundstrom, M.; Dai, H., Nature, 2003, 424, 654

【非专利文献5】【Non-Patent Document 5】

Durkop,T.;Getty,S.A.;Cobas,E.;Fuhrer,M.S.,Nano Lett.2004,4,35Durkop, T.; Getty, S.A.; Cobas, E.; Fuhrer, M.S., Nano Lett.2004, 4, 35

【非专利文献6】【Non-Patent Document 6】

Journet,C.;Maser,W.K.;Bernier,P.;Loiseau,A.;Lamy de laChapelle,M.;Lefrant,S.;Deniard,P.;Lee,R.;Fischer,J.E.,Nature1997,388,756Journet, C.; Maser, W.K.; Bernier, P.; Loiseau, A.; Lamy de la Chapelle, M.; Lefrant, S.; Deniard, P.; Lee, R.;

【非专利文献7】【Non-Patent Document 7】

Thess,A.;Lee,R.;Nikolaev,P.;Dai,H.;Petit,P.,Robert,J.;Xu,C.;Lee,Y.H.;Kim,S.G.;Rinzler,A.G.;Colbert,D.T.;Scuseria,G.E.;Tomanek,D.;Fischer,J.E.;Smalley,R.E.,Science 1996,273,483Thess, A.; Lee, R.; Nikolaev, P.; Dai, H.; Petit, P., Robert, J.; Xu, C.; Lee, Y.H.; Kim, S.G.; Rinzler, A.G.; Colbert, D.T. ; Scuseria, G.E.; Tomanek, D.; Fischer, J.E.; Smalley, R.E., Science 1996, 273, 483

【非专利文献8】【Non-Patent Document 8】

lsmach,A.;Segev,L.;Wachtel,E.;Joselevich,E.,Angew.Chem.Int.Ed.2004,43,6140Ismach, A.; Segev, L.; Wachtel, E.; Joselevich, E., Angew. Chem. Int. Ed. 2004, 43, 6140

【非专利文献9】【Non-Patent Document 9】

Huang,Sh.M.;Cai,X.Y.;Liu,J.,J.Am.Chem.Soc.2003,125,5636Huang, Sh.M.; Cai, X.Y.; Liu, J., J.Am.Chem.Soc.2003, 125, 5636

【非专利文献10】【Non-Patent Document 10】

Kong,J.;Soh,H.T.;Cassell,A.M.;Quate,C.F.;Dai,H.,Nature1998,395,878Kong, J.; Soh, H.T.; Cassell, A.M.; Quate, C.F.; Dai, H., Nature 1998, 395, 878

【非专利文献11】[Non-Patent Document 11]

Tanaka,K.;Yamabe,T.;Fukui,K.,The Science and Technology ofCarbon Nanotubes;Elsevier:Oxford,1999Tanaka, K.; Yamabe, T.; Fukui, K., The Science and Technology of Carbon Nanotubes; Elsevier: Oxford, 1999

【非专利文献12】【Non-Patent Document 12】

Wong,S.;Joselevich,E.;Woolley,A.;Cheung,C.;Lieber,C.,Nature 1998,394,52Wong, S.; Joselevich, E.; Woolley, A.; Cheung, C.; Lieber, C., Nature 1998, 394, 52

【非专利文献13】【Non-Patent Document 13】

Fan,S.;Chapline,M.;Franklin,N.;Tombler,T.;Cassell,A.;Dai,H.,Science 1999,283,512Fan, S.; Chapline, M.; Franklin, N.; Tombler, T.; Cassell, A.; Dai, H., Science 1999, 283, 512

【非专利文献14】[Non-Patent Document 14]

Wang,X.B.;Liu,Y.Q.;Zhu,D.B.,Chem.Commun.2001,751Wang, X.B.; Liu, Y.Q.; Zhu, D.B., Chem.Commun.2001, 751

【非专利文献15】【Non-Patent Document 15】

Wang,X.B.;Liu,Y.Q.;Zhu,D.B.,Adv.Mater.2002,14,165Wang, X.B.; Liu, Y.Q.; Zhu, D.B., Adv. Mater. 2002, 14, 165

【非专利文献16】【Non-Patent Document 16】

Wang,X.B.;Liu,Y.Q.;Hu,P.A.;Yu,G.;Xiao,K.;Zhu,D.B.,Adv.Mater.2002,14,1557Wang, X.B.; Liu, Y.Q.; Hu, P.A.; Yu, G.;

【非专利文献17】【Non-Patent Document 17】

Song,L.;Ci,L.J.;Zhou,Zh.P.;Xie,S.Sh.,Adv.Mater.2004,16,1529Song, L.; Ci, L.J.; Zhou, Zh.P.; Xie, S.Sh., Adv. Mater.2004, 16, 1529

【非专利文献18】【Non-Patent Document 18】

Huang,Sh.M.;Woodson,M.;Smalley,R.;Liu,J.,Nano Lett.2004,4,1025Huang, Sh. M.; Woodson, M.; Smalley, R.; Liu, J., Nano Lett. 2004, 4, 1025

【非专利文献19】【Non-Patent Document 19】

Shi,Z.J.;Okazaki,T.;Shimada,T.;Sugai,T.;Suenaga,K.;Shinohara,H.,J.Phys.Chem.B 2003,107,2485Shi, Z.J.; Okazaki, T.; Shimada, T.; Sugai, T.; Suenaga, K.;

【非专利文献20】【Non-Patent Document 20】

Mukhopadhyay,K.;Koshio,A.;Tanaka,N.;Shinohara,H.,Jpn.J.Appl.Phys.1998,37,1257Mukhopadhyay, K.; Koshio, A.; Tanaka, N.; Shinohara, H., Jpn.J.Appl.Phys.1998, 37, 1257

【非专利文献21】【Non-Patent Document 21】

Okamoto,A.;Shinohara,H.,Carbon 2000,43,1691Okamoto, A.; Shinohara, H., Carbon 2000, 43, 1691

【非专利文献22】【Non-Patent Document 22】

Mukhopadhyay,K.;Koshio,A.;Sugai,T.;Tanaka,N.;Shinohara,H.;Konya,Z.,Chem.Phys.Lett.,1999,303,117Mukhopadhyay, K.; Koshio, A.; Sugai, T.; Tanaka, N.; Shinohara, H.;

【非专利文献23】【Non-Patent Document 23】

Murakami,Y.;Einarsson,E.;Edamura,T.;Maruyama,S.,Carbon 2005,43,2664Murakami, Y.; Einarsson, E.; Edamura, T.; Maruyama, S., Carbon 2005, 43, 2664

【专利文献24】[Patent Document 24]

国际公开第03/068676号小册子International Publication No. 03/068676 Pamphlet

发明内容Contents of the invention

然而,当利用CVD法,在减压条件下制备单层碳纳米管时,由于难以控制单层碳纳米管的生长参数,因此,很难制备具有被控制的结构的高品质单层碳纳米管。However, when using the CVD method to prepare single-walled carbon nanotubes under reduced pressure, it is difficult to control the growth parameters of single-walled carbon nanotubes, so it is difficult to prepare high-quality single-walled carbon nanotubes with a controlled structure. .

因此,本发明要解决的课题是提供一种能够容易地制备出具有被控制的结构的高品质单层碳纳米管,并且能够容易地制备出包含直径极其小的单层碳纳米管、且直径的分布幅度极其窄的单层碳纳米管的方法,提供一种通过该方法制备的单层碳纳米管以及利用该方法制备电子元件的方法。Therefore, the problem to be solved by the present invention is to provide a high-quality single-walled carbon nanotube that can be easily prepared with a controlled structure, and can easily prepare a single-walled carbon nanotube containing an extremely small diameter, and the diameter A method for a single-layer carbon nanotube with an extremely narrow distribution range, a single-layer carbon nanotube prepared by the method and a method for preparing an electronic component by using the method are provided.

为了解决上述课题,本发明的第一方面是一种单层碳纳米管的制备方法,其特征在于:使用通过气化醇或醇的水溶液而得到的气体作为反应气体,利用化学气相沉积法,在常压下使单层碳纳米管生长。In order to solve the above-mentioned problems, the first aspect of the present invention is a method for preparing single-walled carbon nanotubes, which is characterized in that: using a gas obtained by vaporizing alcohol or an aqueous solution of alcohol as a reaction gas, using a chemical vapor deposition method, Single-walled carbon nanotubes were grown under normal pressure.

本发明的第二方面是一种单层碳纳米管,其特征在于:该单层碳纳米管通过使用气化醇或醇的水溶液而得到的气体作为反应气体,利用化学气相沉积法,在常压下使单层碳纳米管生长而制备。The second aspect of the present invention is a single-layer carbon nanotube, which is characterized in that: the single-layer carbon nanotube uses gas obtained by vaporizing alcohol or an aqueous solution of alcohol as a reaction gas, and utilizes a chemical vapor deposition method. Produced by growing single-walled carbon nanotubes under pressure.

本发明的第三方面是一种使用单层碳纳米管制备电子元件的方法,其特征在于:使用通过气化醇或醇的水溶液而得到的气体作为反应气体,利用化学气相沉积法,在常压下使上述单层碳纳米管生长。The third aspect of the present invention is a method for preparing electronic components using single-layer carbon nanotubes, which is characterized in that: using a gas obtained by vaporizing alcohol or an aqueous solution of alcohol as a reaction gas, using a chemical vapor deposition method, in normal The above-mentioned single-walled carbon nanotubes were grown by pressing.

在本发明中,典型地,通过将在化学气相沉积装置的反应部位的外部利用自然蒸发等来气化醇或醇的水溶液而得到的气体导入该反应部位而进行反应。醇的水溶液中醇浓度(体积浓度)范围为大于0%且小于100%,只要是在该范围内,醇浓度基本没有限制,而如果醇浓度为75%或75%以上,且越接近100%,就越能够制备更小直径的单层碳纳米管,如果醇浓度为50%~95%,优选为50%~80%,就能够制备直径的分布幅度窄的单层碳纳米管,尤其当醇浓度为70%~80%时,能够制备直径的分布幅度极其窄的单层碳纳米管。In the present invention, typically, the reaction is performed by introducing a gas obtained by vaporizing alcohol or an aqueous solution of alcohol by natural evaporation or the like outside the reaction site of the chemical vapor deposition apparatus into the reaction site. The range of alcohol concentration (volume concentration) in the aqueous solution of alcohol is greater than 0% and less than 100%. As long as it is within this range, the alcohol concentration is basically not limited, and if the alcohol concentration is 75% or above, and the closer to 100% , the more able to prepare single-walled carbon nanotubes with smaller diameters, if the alcohol concentration is 50% to 95%, preferably 50% to 80%, it is possible to prepare single-walled carbon nanotubes with a narrow diameter distribution, especially when When the alcohol concentration is 70% to 80%, single-layer carbon nanotubes with extremely narrow diameter distribution can be prepared.

单层碳纳米管的生长温度通常为500℃~1500℃,优选为650℃~900℃,更优选为800℃~900℃,但是并不限定于此。单层碳纳米管的生长,典型地,是在该生长温度下,通过使气化醇或醇的水溶液而得到的气体与金属催化剂接触而进行。作为金属催化剂,可以使用一直以来被用于碳纳米管的生长中的公知的各种催化剂。The growth temperature of single-walled carbon nanotubes is generally 500°C to 1500°C, preferably 650°C to 900°C, and more preferably 800°C to 900°C, but is not limited thereto. The growth of single-walled carbon nanotubes is typically carried out by bringing a gas obtained by vaporizing alcohol or an aqueous solution of alcohol into contact with a metal catalyst at the growth temperature. As the metal catalyst, various known catalysts conventionally used for the growth of carbon nanotubes can be used.

作为醇,基本上可以使用任何醇,可以是一元醇,也可以是多元醇,可以是饱和醇,也可以是不饱和醇。一般而言,碳原子数少的一元醇在常温下是液态,与水任意地混合,从而还能够容易地制备醇浓度高的水溶液,因此是优选的。作为醇,具体地可以列举甲醇、乙醇、1-丙醇、2-丙醇(异丙醇)、1-丁醇、2-丁醇(仲丁醇)、2-甲基-1-丙醇(异丁醇)、2-甲基-2-丙醇(叔丁醇)等,但并不限定于此。As the alcohol, basically any alcohol can be used, and it may be a monohydric alcohol or a polyhydric alcohol, and may be a saturated alcohol or an unsaturated alcohol. In general, monohydric alcohols with a small number of carbon atoms are liquid at normal temperature and are arbitrarily mixed with water, since an aqueous solution with a high alcohol concentration can be easily prepared, and thus is preferable. Examples of the alcohol specifically include methanol, ethanol, 1-propanol, 2-propanol (isopropanol), 1-butanol, 2-butanol (sec-butanol), and 2-methyl-1-propanol (isobutanol), 2-methyl-2-propanol (tert-butanol), etc., but not limited thereto.

通过调节醇水溶液中的醇浓度和/或醇水溶液的气化速度,可以控制单层碳纳米管的直径和/或直径分布。醇水溶液的气化速度,例如可以通过改变加有醇水溶液的容器的温度来进行调节。By adjusting the concentration of alcohol in the aqueous alcohol solution and/or the vaporization rate of the aqueous alcohol solution, the diameter and/or diameter distribution of the single-layer carbon nanotubes can be controlled. The vaporization rate of the aqueous alcohol solution can be adjusted, for example, by changing the temperature of the container containing the aqueous alcohol solution.

优选在通过化学气相沉积法形成单层碳纳米管之后,进行产物的组成精制。由于在产物中通常除了单层碳纳米管之外还包含无定形碳或金属杂质等,因此为除去它们而进行该精制。所述精制优选通过利用盐酸的酸处理、利用硝酸的回流、以及空气氧化来进行。It is preferable to refine the composition of the product after forming the single-walled carbon nanotubes by the chemical vapor deposition method. Since the product generally contains amorphous carbon, metal impurities, etc. in addition to single-walled carbon nanotubes, this purification is performed to remove them. The purification is preferably performed by acid treatment with hydrochloric acid, reflux with nitric acid, and air oxidation.

该单层碳纳米管只要是应用其独有的电、机械、电光学或电机械特性的元件,就可适用于任何元件。例如,作为利用该单层碳纳米管的电子元件,具体地可以列举场致发射元件、场效应晶体管(FET)(还包括薄膜晶体管(TFT))、单电子晶体管、分子传感器、太阳能电池、光电变换元件、发光元件、存储器等。This single-walled carbon nanotube can be applied to any device as long as it is a device utilizing its unique electrical, mechanical, electro-optical or electro-mechanical characteristics. For example, as electronic components using the single-walled carbon nanotubes, specifically, field emission elements, field effect transistors (FETs) (including thin film transistors (TFTs)), single electron transistors, molecular sensors, solar cells, photoelectric Conversion element, light emitting element, memory, etc.

在如上构成的本发明中,通过利用化学气相沉积法在常压下使单层碳纳米管生长,其与利用化学气相沉积法在减压下使单层碳纳米管生长的情况相比,容易控制生长参数,使具有被控制的结构的高品质单层碳纳米管的生长变得容易。另外,通过使用气化醇或醇的水溶液而得到的气体作为反应气体,使包含直径极其小的单层碳纳米管、且直径的分布幅度极其窄的单层碳纳米管的生长成为可能。In the present invention constituted as above, by using the chemical vapor deposition method to grow the single-walled carbon nanotubes under normal pressure, it is easier to grow the single-walled carbon nanotubes than the case of growing the single-walled carbon nanotubes under reduced pressure by the chemical vapor deposition method. Control of growth parameters facilitates the growth of high-quality single-walled carbon nanotubes with controlled structures. In addition, by using a gas obtained by vaporizing alcohol or an aqueous alcohol solution as a reaction gas, it is possible to grow single-walled carbon nanotubes including extremely small-diameter single-walled carbon nanotubes with extremely narrow diameter distribution widths.

通过本发明,能够容易地制备具有被控制的结构的高品质单层碳纳米管,而且能够容易地制备包含直径极其小的单层碳纳米管、且直径的分布幅度极其窄的单层碳纳米管。而且,通过使用由该方法制得的单层碳纳米管,能够得到高性能的电子元件。According to the present invention, it is possible to easily prepare high-quality single-walled carbon nanotubes having a controlled structure, and to easily prepare single-walled carbon nanotubes containing extremely small-diameter single-walled carbon nanotubes and having an extremely narrow diameter distribution. Tube. Furthermore, by using the single-walled carbon nanotubes produced by this method, high-performance electronic elements can be obtained.

附图说明Description of drawings

图1是表示本发明的一个实施例中使用的CVD装置的结构的截面图。FIG. 1 is a cross-sectional view showing the structure of a CVD apparatus used in one embodiment of the present invention.

图2是表示本发明的一个实施例中使用100%的乙醇浓度刚刚制备后的试样的拉曼光谱的简图。Fig. 2 is a diagram showing a Raman spectrum of a sample immediately after preparation using an ethanol concentration of 100% in one example of the present invention.

图3是表示对本发明的一个实施例中使用100%的乙醇浓度刚刚制备后的试样进行硝酸回流后的拉曼光谱的简图。Fig. 3 is a schematic diagram showing a Raman spectrum of a sample immediately after nitric acid reflux with 100% ethanol concentration in an example of the present invention.

图4是表示对本发明的一个实施例中使用100%的乙醇浓度刚刚制备后的试样进行最终精制后的拉曼光谱的简图。Fig. 4 is a schematic diagram showing a Raman spectrum after final purification of a sample immediately after preparation using an ethanol concentration of 100% in an example of the present invention.

图5a~图5d是表示本发明的一个实施例中使用100%的乙醇浓度刚刚制备之后的试样、HCl处理后的试样、HNO3回流后的试样、以及最终精制后的试样的SEM图像的图片代用照片。Fig. 5 a~Fig. 5 d is the sample that uses the ethanol concentration of 100% to just prepare in one embodiment of the present invention, the sample after HCl treatment, the sample after HNO reflux, and the sample after final refining A picture-substituting photograph of the SEM image.

图6是表示对本发明的一个实施例中使用100%的乙醇浓度刚刚制备后的试样进行到最终精制为止的试样的TEM图像的图片代用照片。FIG. 6 is a photograph substituted for a photograph showing a TEM image of a sample immediately after preparation to final purification using an ethanol concentration of 100% in one example of the present invention.

图7是表示本发明的一个实施例中使用100%的乙醇浓度刚刚制备后的试样的热重分析测定结果的简图。Fig. 7 is a schematic diagram showing the results of thermogravimetric analysis of samples immediately after preparation using an ethanol concentration of 100% in one example of the present invention.

图8是表示对本发明的一个实施例中使用100%的乙醇浓度刚刚制备后的试样进行到HCl处理为止的试样的热重分析测定结果的简图。8 is a schematic diagram showing the results of thermogravimetric analysis of samples immediately after preparation using 100% ethanol concentration up to HCl treatment in one example of the present invention.

图9是表示对本发明的一个实施例中使用100%的乙醇浓度刚刚制备后的试样进行到利用HNO3的回流为止的试样的热重分析测定结果的简图。9 is a schematic diagram showing the results of thermogravimetric analysis of samples immediately after preparation using 100% ethanol concentration up to reflux with HNO 3 in one example of the present invention.

图10是表示对本发明的一个实施例中使用100%的乙醇浓度刚刚制备后的试样进行到最终精制为止的试样的热重分析测定结果的简图。10 is a schematic diagram showing the results of thermogravimetric analysis of samples immediately after preparation to final purification using an ethanol concentration of 100% in one example of the present invention.

图11是表示本发明的一个实施例中改变乙醇浓度进行生长的单层碳纳米管的直径分布的测定结果的简图。Fig. 11 is a schematic diagram showing the measurement results of the diameter distribution of single-walled carbon nanotubes grown with varying concentrations of ethanol in one example of the present invention.

具体实施方式Detailed ways

以下,参照附图对本发明的一个实施方式进行说明。Hereinafter, one embodiment of the present invention will be described with reference to the drawings.

在该实施方式中,在基板上形成金属催化剂,使用通过气化醇(碳源)或醇的水溶液而制得的气体作为反应气体,利用CVD法,在常压下合成单层碳纳米管。此时,在CVD装置的反应部位(伸入炉内的反应管的部分)的外部气化醇或醇的水溶液而得到气体,将该气体导入该反应部位而进行反应。然后,对这样合成的单层碳纳米管进行组成精制。In this embodiment, a metal catalyst is formed on a substrate, and a gas obtained by vaporizing alcohol (carbon source) or an aqueous solution of alcohol is used as a reaction gas to synthesize single-walled carbon nanotubes at normal pressure by the CVD method. At this time, alcohol or an aqueous solution of alcohol is vaporized outside the reaction part of the CVD apparatus (the part of the reaction tube protruding into the furnace) to obtain a gas, and the gas is introduced into the reaction part to perform the reaction. Then, the composition of the thus-synthesized single-walled carbon nanotubes is refined.

生长单层碳纳米管的基板是由无机材料和/或有机材料形成的基板,其材料可根据需要选择。作为由无机材料形成的基板,可以使用例如硅基板(包括在表面上形成SiO2膜的基板)、玻璃基板、石英基板等。作为由有机材料形成的基板,可以使用例如聚合物基板。作为由无机材料和有机材料形成的基板,可以使用组合这些材料而成的基板。The substrate for growing single-walled carbon nanotubes is a substrate formed of inorganic materials and/or organic materials, and the material can be selected according to needs. As the substrate formed of an inorganic material, for example, a silicon substrate (including a substrate on which a SiO2 film is formed on the surface), a glass substrate, a quartz substrate, or the like can be used. As the substrate formed of an organic material, for example, a polymer substrate can be used. As the substrate formed of an inorganic material and an organic material, a substrate obtained by combining these materials can be used.

作为形成在基板上的金属催化剂,可以使用例如Fe、Co、Ni、Mo、Pt、Pd、Rh、Ir等的金属或组合这些金属中的两种或两种以上的物质,例如Fe-Co、Ni-Co、Fe-Mo、Co-Mo等,但是并不限于这些物质。典型地,该金属催化剂负载在规定的载体上。作为该载体,可以使用例如MgO、二氧化硅、氧化铝、沸石、氧化锆、二氧化钛等,但并不限于这些物质。As the metal catalyst formed on the substrate, metals such as Fe, Co, Ni, Mo, Pt, Pd, Rh, Ir, etc. or a combination of two or more of these metals can be used, such as Fe—Co, Ni-Co, Fe-Mo, Co-Mo, etc., but not limited to these substances. Typically, the metal catalyst is supported on a specified carrier. As the carrier, for example, MgO, silica, alumina, zeolite, zirconia, titania, etc. can be used, but not limited to these.

生长温度为500℃~1500℃,优选为650℃~900℃,更优选为800℃~900℃。The growth temperature is 500°C to 1500°C, preferably 650°C to 900°C, more preferably 800°C to 900°C.

醇的水溶液中的醇浓度为大于0%且小于100%,但优选为50%~95%,更优选为50%~80%,进一步优选为70%~80%。作为醇,可以使用例如甲醇、乙醇、1-丙醇、2-丙醇、1-丁醇、2-丁醇、2-甲基-1-丙醇、2-甲基-2-丙醇等。The alcohol concentration in the alcohol aqueous solution is more than 0% and less than 100%, but is preferably 50% to 95%, more preferably 50% to 80%, and still more preferably 70% to 80%. As the alcohol, for example, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, 2-methyl-1-propanol, 2-methyl-2-propanol, etc. can be used .

根据该实施方式,使用通过气化醇或醇的水溶液而得到的气体作为反应气体,利用CVD法,在常压下使单层碳纳米管生长,因此可容易地制备具有被控制的结构的高品质单层碳纳米管。而且,能够容易地制备包含直径例如为0.6~1.8nm的直径极其小的单层碳纳米管、并且直径的分布幅度例如为0.6~0.7nm的幅度极其窄的单层碳纳米管。According to this embodiment, a gas obtained by vaporizing alcohol or an aqueous solution of alcohol is used as a reaction gas, and single-walled carbon nanotubes are grown under normal pressure by the CVD method, so that high carbon nanotubes having a controlled structure can be easily produced. Quality Single Wall Carbon Nanotubes. Furthermore, it is possible to easily produce single-walled carbon nanotubes including extremely small single-walled carbon nanotubes having a diameter of, for example, 0.6 to 1.8 nm and having an extremely narrow diameter distribution width of, for example, 0.6 to 0.7 nm.

实施例Example

(1)催化剂的制备(1) Preparation of catalyst

作为催化剂,通过以往的化学浸渍(chemical impregnation)法制备Fe-Co。具体而言,首先,通过将硝酸铁(Fe(NO3)3 9H2O)和硝酸钴(Co(NO3)3 9H2O)溶解在乙醇(典型地为40ml)中,制备硝酸金属溶液。接着,将通过分解碳酸镁盐而得到的氧化镁(MgO)作为载体加到该溶液中。接着,为了使这样制得的混合物变均匀,对其进行3个小时的超声波处理。用旋转式蒸发器,从该混合物中除去乙醇,然后于115℃下使所得的材料干燥12小时。之后,将该材料制成粉末。MgO载体中的催化剂总量固定为10重量%,过渡金属的摩尔比为Fe/Co=1∶2。As a catalyst, Fe—Co was prepared by a conventional chemical impregnation method. Specifically, first, a metal nitrate solution was prepared by dissolving iron nitrate (Fe(NO 3 ) 3 9H 2 O) and cobalt nitrate (Co(NO 3 ) 3 9H 2 O) in ethanol (typically 40 ml) . Next, magnesium oxide (MgO) obtained by decomposing magnesium carbonate salt was added to the solution as a carrier. Next, in order to make the mixture thus prepared homogeneous, it was subjected to ultrasonic treatment for 3 hours. Ethanol was removed from the mixture using a rotary evaporator, and the resulting material was dried at 115°C for 12 hours. Afterwards, the material is made into a powder. The total amount of the catalyst in the MgO carrier was fixed at 10% by weight, and the molar ratio of the transition metal was Fe/Co=1:2.

(2)常压CVD(2) Atmospheric pressure CVD

图1表示本发明者们为了在常压下制备单层碳纳米管而设计的CVD装置。如图1所示,将作为反应管的石英管11放入炉12内。使石英管11的两端伸出到炉12的外部。炉12的温度通过热电偶13测定,并通过温度控制装置14进行控制。在位于炉12的外部的石英管11的一端的内部,放置加有乙醇或乙醇水溶液15的容器16。乙醇或乙醇水溶液15的浓度为100%~50%。在石英舟17上作为催化剂金属微粒装载约1g的催化剂18,该催化剂由负载Fe/Co微粒的MgO构成,并将石英舟17插入炉12的中心部位的石英管11中。然后,边利用Ar/H2混合气流(Ar:250ml/min、H2:20ml/min)输送由容器16内的乙醇或乙醇水溶液15气化而成的乙醇气体或者乙醇与水的气体,边在常压下,以850℃、典型地以30分钟的反应时间,利用CVD法制备单层碳纳米管。乙醇或乙醇水溶液15的气化速度是通过如下方法进行控制的:事先在容器16的底面固定铁片19,通过使设置在石英管11的外部的磁石20沿着石英管11移动而使容器16移动,从而改变与炉12之间的距离,利用被加热的石英管11的辐射热来控制乙醇或乙醇水溶液15的温度变化。FIG. 1 shows a CVD apparatus designed by the present inventors for producing single-walled carbon nanotubes under normal pressure. As shown in FIG. 1 , a quartz tube 11 as a reaction tube is placed in a furnace 12 . Both ends of the quartz tube 11 are protruded to the outside of the furnace 12 . The temperature of the furnace 12 is measured by a thermocouple 13 and controlled by a temperature control device 14 . Inside one end of the quartz tube 11 located outside the furnace 12, a container 16 filled with ethanol or an aqueous ethanol solution 15 is placed. The concentration of ethanol or ethanol aqueous solution 15 is 100%-50%. About 1 g of a catalyst 18 composed of MgO supporting Fe/Co fine particles was loaded on the quartz boat 17 as catalyst metal fine particles, and the quartz boat 17 was inserted into the quartz tube 11 at the center of the furnace 12 . Then, the ethanol gas or the gas of ethanol and water gasified from the ethanol or ethanol aqueous solution 15 in the container 16 is transported by using the Ar/H 2 mixed gas flow (Ar: 250ml/min, H 2 : 20ml/min). Single-walled carbon nanotubes are produced by CVD at 850° C. under normal pressure, typically with a reaction time of 30 minutes. The vaporization rate of ethanol or ethanol aqueous solution 15 is controlled by the following method: fix iron piece 19 on the bottom surface of container 16 in advance, move container 16 by making the magnet 20 that is arranged on the outside of quartz tube 11 move along quartz tube 11. Move to change the distance from the furnace 12, and use the radiant heat of the heated quartz tube 11 to control the temperature change of ethanol or ethanol aqueous solution 15.

(3)精制(3) refined

对刚刚用常压CVD法制备后的试样,应用组成精制工序。首先,通过利用浓盐酸(HCl)的酸处理除去催化剂(MgO载体以及金属微粒两者)。典型地,将刚制备后的试样边进行30分钟的超声波处理,边将其放置于50ml的6N浓盐酸中。接着,为了除去无定形碳、残留金属微粒以及MgO载体,将已进行HCl处理的试样在4N硝酸(HNO3)溶液中于120℃下回流12小时。对所得试样进行过滤和利用蒸馏水进行洗涤,直到过滤物的颜色变透明。在精制工序的最后阶段,将试样在空气中于470℃下加热30分钟之后,再用6N浓盐酸进行处理,除去残留杂质。漂洗试样,在120℃下使之干燥后,最终得到黑色中带灰色的薄垫。The composition refining process is applied to the sample just after being prepared by the atmospheric pressure CVD method. First, the catalyst (both the MgO support and the metal fine particles) was removed by acid treatment with concentrated hydrochloric acid (HCl). Typically, the freshly prepared sample is placed in 50 ml of 6N concentrated hydrochloric acid while being subjected to ultrasonic treatment for 30 minutes. Next, in order to remove amorphous carbon, residual metal particles, and MgO support, the HCl-treated sample was refluxed in 4N nitric acid (HNO 3 ) solution at 120° C. for 12 hours. The resulting sample was filtered and washed with distilled water until the filtrate became transparent in color. In the final stage of the refining process, the sample was heated in air at 470°C for 30 minutes, and then treated with 6N concentrated hydrochloric acid to remove residual impurities. After rinsing the sample and allowing it to dry at 120° C., a black to grayish thin pad was finally obtained.

(5)表征(5) Characterization

使用扫描型电子显微镜(SEM,日立制备所制备的S-4300,15kV)、高分辨率透射电子显微镜(HRTEM、Phillips公司制备的CM200、200kV)以及拉曼分光仪(632.8nm、Renishaw1000),进行试样的表征。金属催化剂微粒以及MgO载体(金属杂质)的含量是使用热重分析装置(TGA,Dupont Instrument公司制备的951TGA)测定的。在干燥空气中,在105℃下除去试样的水分后,边以100ml/min的速度通干燥空气,边以5℃/min的速度加热至1000℃。所谓残留重量是指试样中的金属杂质的含量。Using a scanning electron microscope (SEM, S-4300 produced by Hitachi, 15kV), a high-resolution transmission electron microscope (HRTEM, CM200 produced by Phillips, 200kV) and a Raman spectrometer (632.8nm, Renishaw1000), carry out Characterization of the samples. The content of the metal catalyst particles and the MgO support (metal impurities) was measured using a thermogravimetric analysis device (TGA, 951TGA manufactured by Dupont Instrument). In dry air, after removing moisture from the sample at 105°C, heat to 1000°C at a speed of 5°C/min while passing dry air at a speed of 100ml/min. The so-called residual weight refers to the content of metal impurities in the sample.

(6)结果及讨论(6) Results and discussion

图2表示使用100%的乙醇浓度刚刚制备后的试样的拉曼光谱,图3表示利用硝酸对该试样进行回流后的拉曼光谱,图4表示最终精制后的试样的拉曼光谱。从图2,在130~350cm-1的低频区域可以明确地观察到单层碳纳米管的特征拉曼散射模式之一的径向呼吸模式(radial-breathing mode,RBM)。RBM模式的频率与单层碳纳米管的直径成反比,其关系可以表示为ω=223.75/d+6.5(例如,参照Lyu,S.C.;Liu,B.C.;Lee,T.J.;Liu,Z.Y.;Yang,C.W.;Park,C.Y.;Lee,C.J.,Chem.Commun.2003,734)。其中,ω是单位为cm-1的RBM频率,d是单位为nm的单层碳纳米管的直径,并且对集束效应加以考虑。130~350cm-1的RBM频率对应于0.6~1.8nm的直径。在1586cm-1的主峰(G带)的左侧出现的1552cm-1的肩峰源自石墨的E2g模式的分裂。并且,该肩峰也是单层碳纳米管的特征拉曼散射模式之一(例如,参照A.Kasuya,Y.Sasaki,Y.Saito,K.Tohji,Y.Nishina,Phys.Rev.Lett.1997,78,4434)。除了这些特征峰之外,在1320cm-1出现由缺陷诱发的模式,所谓D带,这表明试样中含有无定形碳那样的存在缺陷的碳。G带对D带的强度比(G/D比)是2.8。G/D比是衡量单层碳纳米管的纯度良好性的尺度,该比例随单层碳纳米管纯度的增加而增大(例如,参照H.Kataura,Y.Kumazawa,Y.Maniwa,Y.Ohtsuka,R.Sen,S.Suzuki,Y.Achiba,Carbon 2000,38,1691)。Fig. 2 shows the Raman spectrum of the sample immediately after preparation using 100% ethanol concentration, Fig. 3 shows the Raman spectrum of the sample after reflux with nitric acid, and Fig. 4 shows the Raman spectrum of the sample after final purification . From Fig. 2, the radial-breathing mode (RBM), one of the characteristic Raman scattering modes of single-layer carbon nanotubes, can be clearly observed in the low-frequency region of 130-350 cm -1 . The frequency of the RBM mode is inversely proportional to the diameter of the single-walled carbon nanotube, and its relationship can be expressed as ω=223.75/d+6.5 (for example, refer to Lyu, SC; Liu, BC; Lee, TJ; Liu, ZY; Yang, CW ; Park, CY; Lee, CJ, Chem. Commun. 2003, 734). Among them, ω is the RBM frequency in cm -1 , d is the diameter of single-layer carbon nanotubes in nm, and the clustering effect is taken into consideration. RBM frequencies of 130-350 cm -1 correspond to diameters of 0.6-1.8 nm. The shoulder at 1552 cm appearing on the left side of the main peak (G band) at 1586 cm originates from the splitting of the E 2g mode of graphite. And, this shoulder peak is also one of characteristic Raman scattering mode of single wall carbon nanotube (for example, with reference to A.Kasuya, Y.Sasaki, Y.Saito, K.Tohji, Y.Nishina, Phys.Rev.Lett.1997 , 78, 4434). In addition to these characteristic peaks, a defect-induced mode, the so-called D band, appears at 1320 cm -1 , which indicates that the sample contains defective carbon such as amorphous carbon. The intensity ratio of the G band to the D band (G/D ratio) was 2.8. The G/D ratio is a measure of the purity of single-walled carbon nanotubes, and the ratio increases with the purity of single-walled carbon nanotubes (for example, referring to H.Kataura, Y.Kumazawa, Y.Maniwa, Y. Ohtsuka, R. Sen, S. Suzuki, Y. Achiba, Carbon 2000, 38, 1691).

在刚制备之后的试样(图5a)的扫描型电子显微镜(SEM)图像中观察到纤维状的产物,这被认为是含有无定形碳以及金属微粒那样的杂质的单层碳纳米管的束。热重分析测量显示出刚制备后的试样中金属杂质含量为54重量%。A fibrous product was observed in the scanning electron microscope (SEM) image of the sample immediately after preparation (Fig. 5a), which is considered to be a bundle of single-walled carbon nanotubes containing impurities such as amorphous carbon and metal particles. . Thermogravimetric measurements showed a metal impurity content of 54% by weight in the sample as prepared.

图5b、图5c、图5d表示试样的SEM图像,图5b表示HCl处理后的试样、图5c表示HNO3回流后的试样、图5d表示最终的精制试样。作为用于精制的试样,本发明者们使用以100%乙醇浓度制备的试样。HCl处理后,观测到含有大量无定形碳的许多束(图5b)。通过HCl处理,金属杂质的含量由54%减少到18%。为了除去无定形碳以及残留金属杂质,HCl处理后的试样在HNO3溶液中在120℃下回流12个小时。进行回流后的试样主要由直径大的束构成(图5c),金属杂质的含量降低到8%。进行回流后的试样,其拉曼分光的结果显示出具有显著强度的D带(图3)。本发明者们确信该D带源自在HNO3中回流期间被制备并包覆在单层碳纳米管束上的无定形碳的小片。为了完全除去残留杂质,对进行回流后的试样,在空气中进行470℃的热处理以及HCl处理。最终精制试样的SEM图像显示出几乎不存在杂质(图5d)。Figure 5b, Figure 5c, and Figure 5d show the SEM images of the samples, Figure 5b shows the sample after HCl treatment, Figure 5c shows the sample after HNO 3 reflux, and Figure 5d shows the final refined sample. As samples for purification, the present inventors used samples prepared at 100% ethanol concentration. After HCl treatment, many bundles containing a large amount of amorphous carbon were observed (Fig. 5b). The content of metal impurities was reduced from 54% to 18% by HCl treatment. In order to remove amorphous carbon and residual metal impurities, the samples after HCl treatment were refluxed in HNO3 solution at 120 °C for 12 hours. The reflowed sample consisted mainly of large-diameter bundles (Fig. 5c), and the content of metallic impurities was reduced to 8%. The Raman spectroscopic results of the reflowed sample showed a D band with significant intensity ( FIG. 3 ). The inventors believe that this D-band originates from small pieces of amorphous carbon that are prepared and coated on single-layer carbon nanotube bundles during reflux in HNO 3 . In order to completely remove residual impurities, the refluxed sample was subjected to heat treatment at 470° C. and HCl treatment in air. The SEM image of the final refined sample showed almost no impurities (Fig. 5d).

图6表示最终精制试样的透射型电子显微镜(TEM)图像,(a)是低放大倍率,(b)是高放大倍率。该试样基本上由几乎不存在杂质的单层碳纳米管的束构成。最终精制试样的拉曼光谱显示出可忽略的强度的D带(图4),并且显示出无定形碳的大部分在最终的精制工序中被除去。通过本发明者们的组成精制,G/D比由2.8增加到100以上。Fig. 6 shows a transmission electron microscope (TEM) image of the final refined sample, (a) is a low magnification, (b) is a high magnification. The sample basically consisted of bundles of single-walled carbon nanotubes with few impurities present. The Raman spectrum of the final refined sample showed a D band of negligible intensity (Figure 4), and showed that most of the amorphous carbon was removed in the final refining process. The G/D ratio increased from 2.8 to 100 or more by refining the composition of the present inventors.

为了确认试样的单层碳纳米管的纯度,进行热重分析测定。其结果示于图7~图10中。图7表示刚制备之后的试样的测定结果,图8表示HCl处理之后的试样的测定结果,图9表示HNO3回流之后的试样的测定结果,图10表示最终精制试样的测定结果。如图10所示,最终精制试样的残留重量是2重量%以下。在重量变化速率(-dw/dT)分析中,仅得到一个在585℃附近具有最大值的峰,这表明试样含有一种可燃烧的成分。该最大值的温度与被报道的单层碳纳米管的燃烧温度一致,这启示最终精制试样由纯度98%的单层碳纳米管构成。该启示通过TEM观察得到证实(图6)。In order to confirm the purity of the single-walled carbon nanotubes in the sample, thermogravimetric analysis was performed. The results are shown in FIGS. 7 to 10 . Fig. 7 shows the measurement results of the sample just after preparation, Fig. 8 shows the measurement results of the sample after HCl treatment, Fig. 9 shows the measurement results of the sample after HNO reflux , and Fig. 10 shows the measurement results of the final refined sample . As shown in FIG. 10 , the residual weight of the final refined sample was 2% by weight or less. In the weight change rate (-dw/dT) analysis, only one peak with a maximum value around 585°C was obtained, indicating that the sample contained a combustible component. The temperature of this maximum is consistent with the reported combustion temperature of single-walled carbon nanotubes, which suggests that the final refined sample is composed of single-walled carbon nanotubes with a purity of 98%. This suggestion was confirmed by TEM observation (Fig. 6).

在该实施例中,单层碳纳米管的直径以及手性由催化剂存在下的生成反应决定。因此,本发明者们建立了这样的假设:单层碳纳米管的结构可以通过乙醇供给速度进行控制。为了验证该假设,以不同的乙醇浓度制备单层碳纳米管。表1总结了进行试验的乙醇浓度以及所得结果。直径的分布通过拉曼光谱中的RBM频率进行判断。另外,在图11中用图表表示表1的结果。In this example, the diameter and chirality of single-walled carbon nanotubes are determined by the formation reaction in the presence of a catalyst. Therefore, the present inventors hypothesized that the structure of single-walled carbon nanotubes can be controlled by the ethanol supply rate. To test this hypothesis, single-layer carbon nanotubes were prepared with different ethanol concentrations. Table 1 summarizes the ethanol concentrations tested and the results obtained. The distribution of diameters is judged by the RBM frequency in the Raman spectrum. In addition, the results of Table 1 are shown graphically in FIG. 11 .

表1Table 1

  乙醇浓度 ethanol concentration     直径的分布(nm) Distribution of diameters (nm)   乙醇(100%)乙醇∶H2O=4∶1(80%)乙醇∶H2O=3∶1(75%)乙醇∶H2O=2∶1(67%)乙醇∶H2O=1∶1(50%)Ethanol (100%) ethanol: H 2 O = 4: 1 (80%) ethanol: H 2 O = 3: 1 (75%) ethanol: H 2 O = 2: 1 (67%) ethanol: H 2 O = 1:1 (50%)     0.6-1.8(Δ1.2)0.7-1.6(Δ0.9)0.8-1.4(Δ0.6)0.8-1.5(Δ0.7)0.7-1.5(Δ0.8) 0.6-1.8(Δ1.2)0.7-1.6(Δ0.9)0.8-1.4(Δ0.6)0.8-1.5(Δ0.7)0.7-1.5(Δ0.8)

如图11所示,乙醇浓度显著地影响单层碳纳米管的直径分布。一般来说,如果乙醇浓度高,则乙醇蒸汽浓度相应也升高,造成基于碳纳米管的气-液-固(VLS)生长过程的很多种类的碳附着。与之相对地,如果乙醇浓度低,则乙醇蒸汽浓度也相应降低,碳附着类型的种类减少。该趋势可以在图11中看到。As shown in Fig. 11, the concentration of ethanol significantly affects the diameter distribution of single-walled carbon nanotubes. In general, if the ethanol concentration is high, the ethanol vapor concentration is correspondingly high, causing many kinds of carbon attachment based on the vapor-liquid-solid (VLS) growth process of carbon nanotubes. On the other hand, when the ethanol concentration is low, the ethanol vapor concentration is also reduced accordingly, and the types of carbon deposition types are reduced. This trend can be seen in Figure 11.

高品质的单层碳纳米管的制备大大依赖于如CVD装置的反应部位的形状这样的实验的设置。在以往的乙醇CVD中,为了防止所蒸发的乙醇液化,在减压下制备单层碳纳米管。在减压下,与在常压下相比,难以控制乙醇浓度这样的生长参数。在如图1所示的CVD装置中,在位于炉12的外部的石英管11的一端的内部设置加有乙醇或乙醇水溶液15的容器16,因此,通过调节乙醇浓度以及气化速度,可在常压下,以被控制的直径分布制备高品质的单层碳纳米管。The production of high-quality single-walled carbon nanotubes greatly depends on the experimental settings such as the shape of the reaction site of the CVD apparatus. In conventional ethanol CVD, single-walled carbon nanotubes are produced under reduced pressure in order to prevent liquefaction of evaporated ethanol. Under reduced pressure, it is more difficult to control growth parameters such as ethanol concentration than under normal pressure. In the CVD apparatus shown in Figure 1, the inside of one end of the quartz tube 11 that is positioned at the outside of furnace 12 is provided with the container 16 that adds ethanol or ethanol aqueous solution 15, therefore, by adjusting ethanol concentration and gasification rate, can be in High-quality single-walled carbon nanotubes were prepared with controlled diameter distribution under normal pressure.

如上所述,使用本发明者们自行设计的CVD装置,能够在常压下,由乙醇或乙醇水溶液制备高品质的单层碳纳米管。单层碳纳米管的质量以及直径分布可通过调节乙醇浓度和气化速度来控制。通过组合HCl处理、硝酸回流以及空气氧化的组成精制方法,能够制得纯度98%的单层碳纳米管。As described above, using the CVD apparatus designed by the present inventors, high-quality single-walled carbon nanotubes can be produced from ethanol or an aqueous ethanol solution under normal pressure. The mass and diameter distribution of single-layer carbon nanotubes can be controlled by adjusting the ethanol concentration and gasification rate. Single-walled carbon nanotubes with a purity of 98% can be prepared by combining HCl treatment, nitric acid reflux, and air oxidation for compositional refinement.

以上具体地说明了本发明的一个实施方式和一个实施例,但是,本发明并不限于上述实施方式和实施例,可以根据本发明的技术方案进行各种改变。One embodiment and one example of the present invention have been specifically described above, but the present invention is not limited to the above-mentioned embodiment and example, and various changes can be made according to the technical solutions of the present invention.

例如,在上述实施方式和实施例中列举的CVD装置的结构、数值、材料、原料、工序等终究只是举例而已,还可以根据需要使用与这些不同的CVD装置的结构、数值、材料、原料、工序等。For example, the structure, numerical value, material, raw material, process, etc. of the CVD apparatus listed in the above-mentioned embodiments and examples are only examples after all, and the structure, numerical value, material, raw material, etc. of the CVD apparatus different from these may be used as needed. process etc.

附图中符号的简单说明如下:A brief description of the symbols in the drawings is as follows:

11:石英管11: Quartz tube

12:炉12: Furnace

13:热电偶13: Thermocouple

14:温度控制装置14: Temperature control device

15:乙醇或乙醇水溶液15: Ethanol or ethanol aqueous solution

16:容器16: container

17:石英舟17: Quartz Boat

18:催化剂18: Catalyst

19:铁片19: Iron sheet

20:磁石20: magnet

Claims (12)

1.一种单层碳纳米管的制备方法,其特征在于,使用通过气化醇或醇的水溶液而得到的气体作为反应气体,利用化学气相沉积法,在常压下使单层碳纳米管生长。1. A preparation method for single-layer carbon nanotubes, characterized in that, using the gas obtained by vaporizing alcohol or an aqueous solution of alcohol as reaction gas, utilizing chemical vapor deposition, making single-layer carbon nanotubes under normal pressure grow. 2.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,在化学气相沉积装置的反应部位的外部通过气化上述醇或醇的水溶液而得到气体,将该气体导入上述反应部位。2. The preparation method of single-walled carbon nanotubes according to claim 1, characterized in that, the gas is obtained by vaporizing the above-mentioned alcohol or an aqueous solution of alcohol outside the reaction site of the chemical vapor deposition device, and the gas is introduced into the above-mentioned reaction site. 3.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,上述醇的水溶液中醇浓度范围为大于0%且小于100%。3. The method for preparing single-walled carbon nanotubes according to claim 1, characterized in that the alcohol concentration range in the aqueous solution of alcohol is greater than 0% and less than 100%. 4.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,上述醇的水溶液中醇浓度范围为50%~95%。4. The method for preparing single-walled carbon nanotubes according to claim 1, characterized in that the alcohol concentration in the aqueous solution of alcohol ranges from 50% to 95%. 5.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,上述醇的水溶液中醇浓度范围为50%~80%。5. The method for preparing single-walled carbon nanotubes according to claim 1, characterized in that the alcohol concentration in the aqueous solution of alcohol ranges from 50% to 80%. 6.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,在500℃~1500℃的生长温度下使上述单层碳纳米管生长。6 . The method for preparing single-walled carbon nanotubes according to claim 1 , wherein the single-walled carbon nanotubes are grown at a growth temperature of 500° C. to 1500° C. 7 . 7.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,在650℃~900℃的生长温度下使上述单层碳纳米管生长。7 . The method for preparing single-walled carbon nanotubes according to claim 1 , wherein the single-walled carbon nanotubes are grown at a growth temperature of 650° C. to 900° C. 7 . 8.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,上述醇是一元醇。8. The method for preparing single-walled carbon nanotubes according to claim 1, characterized in that the above-mentioned alcohol is a monohydric alcohol. 9.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,通过调节上述醇的水溶液中的醇浓度和/或上述醇的水溶液的气化速度,控制上述单层碳纳米管的直径和/或直径的分布。9. the preparation method of single-layer carbon nanotube according to claim 1 is characterized in that, by regulating the alcohol concentration in the aqueous solution of above-mentioned alcohol and/or the gasification rate of the aqueous solution of above-mentioned alcohol, control above-mentioned single-layer carbon nanotube Tube diameter and/or distribution of diameters. 10.根据权利要求1所述的单层碳纳米管的制备方法,其特征在于,使上述单层碳纳米管生长后,通过进行利用盐酸的酸处理、利用硝酸的回流以及空气氧化而进行精制。10. The method for producing single-walled carbon nanotubes according to claim 1, characterized in that, after the above-mentioned single-walled carbon nanotubes are grown, they are purified by acid treatment with hydrochloric acid, reflux with nitric acid, and air oxidation. . 11.一种单层碳纳米管,其特征在于,该单层碳纳米管通过如下制备:使用通过气化醇或醇的水溶液而得到的气体作为反应气体,利用化学气相沉积法,在常压下使单层碳纳米管生长。11. A single-layer carbon nanotube, characterized in that the single-layer carbon nanotube is prepared as follows: using gas obtained by vaporizing alcohol or an aqueous solution of alcohol as a reaction gas, utilizing chemical vapor deposition, at normal pressure to grow single-walled carbon nanotubes. 12.一种电子元件的制备方法,是使用单层碳纳米管制备电子元件的方法,其特征在于,使用通过气化醇或醇的水溶液而得到的气体作为反应气体,利用化学气相沉积法,在常压下使上述单层碳纳米管生长。12. A method for preparing an electronic component is a method for preparing an electronic component using a single-layer carbon nanotube, characterized in that, using gas obtained by vaporizing alcohol or an aqueous solution of alcohol as a reaction gas, utilizing a chemical vapor deposition method, The above-mentioned single-walled carbon nanotubes were grown under normal pressure.
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