CN101005727A - Electrode for generating plasma and plasma processing apparatus using same - Google Patents

Abstract

The invention provides an electrode for plasma generation. In the electrode for plasma generation, which is arranged opposite to the substrate and is composed of a metal base and a conductor plate, there is no risk of damage to the conductor plate, and a bonding state with good in-plane electrical conduction and heat conduction between the metal base and the conductor plate is ensured. The electrode is made of the following materials: a metal matrix composite material that impregnates a base material such as silicon carbide formed of porous ceramics with a metal such as silicon, and has a joint surface facing at least the entire surface of the substrate to be processed; A conductive plate made of a plasma-resistant material, such as CVD-silicon carbide, is fusion-bonded on the bonding surface of the metal matrix composite material. In this case, when the metal is impregnated into the base material, the conductor plate is fusion-bonded to the metal matrix composite material through the metal.

Description

Electrode for plasma generation and plasma processing device

technical field

The present invention relates to an electrode for generating plasma facing a substrate subjected to plasma processing, and a plasma processing apparatus using the electrode.

Background technique

In the manufacturing process of semiconductors and liquid crystal devices, etc., plasma processing using plasma is widely used, but a plasma processing apparatus for performing such plasma processing is shown in, for example, shown in FIG. In the container 10, there are: a mounting table 11 for mounting a semiconductor wafer (hereinafter referred to as a wafer) W as a substrate, which is also used as a lower electrode; Nozzle12. The structure is as follows: an upper electrode 13 is provided on the lower surface of the shower head 12, and on one of the upper electrode 13 and the mounting table 11, for example, the mounting table 11, a high-frequency wave for plasma generation is applied through a high-frequency power source 14, and a high frequency wave is applied to the mounting table 11. Plasma is generated in the processing space between the mounting table 11 and the upper electrode 13, and the processing gas introduced into the processing chamber 10 from the shower head 12 is activated by the plasma, thereby performing processing on the wafer W mounted on the mounting table 11. Plasma treatment such as etching, film formation treatment, etc. Then, the high-frequency power from the plasma formed in the processing space reaches the upper electrode 13, passes through the wall of the processing container 2, and flows to the ground. In addition, 17 in FIG. 8 is an exhaust passage for exhausting the atmosphere in the processing container 2 to the outside.

However, the structure of the above-mentioned upper electrode 13 is such that a conductor plate 16 such as a silicon (Si) plate, a silicon carbide (SiC) plate, etc. is tightly fixed to a metal such as aluminum (Al) or stainless steel (SUS) with screws, clips, or the like. The surface of the substrate (base material) 15 . This is because the upper electrode 13 as a whole has a structure that does not deform due to the stress caused by the decompression of the processing atmosphere; Dangerous structure of pollution.

The above-mentioned upper electrode 13 is heated by the plasma formed in the processing space and is at a high temperature, but since Si and SiC have smaller thermal expansion coefficients (linear expansion coefficients) than the metal base 15, there is a dimensional difference between them due to thermal expansion, and the conductor The fixed portion of the plate 16 receives excessive pulling stress, and the conductor plate 16 may be damaged.

In order to avoid this bad situation, considering the size difference between the metal base 15 and the conductor plate 16 due to thermal expansion, the screws and clamps for fixing the metal base 15 and the conductor plate 16 are floating and fixed, and efforts are made to fix the conductor plate 16. The portion will not cause traction stress due to thermal expansion of the metal base 15.

However, in order to process the wafer W with high in-plane uniformity, it is required that the active species concentration of the plasma be uniform on the plane parallel to the wafer W. Therefore, on the upper electrode 13, the electrical and thermal states of the conductive plate 16 exposed to the plasma are required to be uniform within the plane. Therefore, the conductor plate 16 is in contact with the metal base 15 so that electrical conduction and thermal conduction are uniformly performed in-plane, in other words, high uniformity is necessary for the in-plane contact state. On the other hand, since the fixed portion of the conductor plate 16 can only be provided on the outer peripheral portion in many cases, in the case of the floating fixed type, the contact state between the metal base 15 and the conductor plate 16 is limited in the upper electrode 13 differences between individuals. As a result, it is difficult to ensure high in-plane uniformity in electrical and thermal conductivity between the metal base 15 and the conductor plate 16, with the result that there is a risk of cracking of the conductor plate 16, process abnormalities, abnormal discharges, and the like. In addition, due to dimensional fluctuations caused by thermal expansion during the temperature rise and fall cycles of the plasma treatment, the bonding surfaces of the metal base 15 and the conductor plate 16 are worn, and dust may be generated from the gas supply holes 12a.

On the other hand, Patent Document 1 discloses an electrode: as the upper electrode 7, when viewed from a longitudinal section, a trapezoidal notch is formed in the center of the porous ceramic, a dielectric is inserted into the notch, and metal is impregnated into the porous ceramic. The base portion is formed, and the metal base and the dielectric are joined by the metal during this impregnation. In this technology, a dielectric is embedded in the center of the metal-ceramic composite material to attenuate the high-frequency power at the center of the electrode and make the electric field intensity under the electrode uniform. However, there is no suggestion on how to make the metal base and the conductor plate in an in-plane contact state with uniform electrical conduction and thermal conduction.

Patent Document 1: Japanese Patent Laid-Open No. 2005-228973 (paragraph 0032, paragraphs 0053 to 0055, FIG. 9 )

Contents of the invention

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electrode and a plasma processing apparatus using the electrode. The electrode is characterized in that there is no risk of damage to the conductor plate in an electrode formed of a metal substrate (in the present invention, a metal matrix composite material) for generating plasma and a conductor plate, which is arranged opposite to the substrate. The electrical conduction and thermal conduction between the base and the conductor plate are in a joint state with good in-plane uniformity.

The electrode for plasma generation of the present invention is used to perform plasma treatment on a substrate and is arranged opposite to the surface to be processed of the substrate. a metal matrix composite material on the joint surface facing the entire surface to be processed; and a conductor plate formed of a plasma-resistant material bonded to the joint surface of the metal matrix composite material by metal fusion. In this electrode, as the above-mentioned base material, for example, silicon carbide, silicon nitride, aluminum oxide, aluminum nitride, etc. are used; as the metal used in fusion bonding, for example, silicon or aluminum is used; or silicon nitride etc. Among them, a preferable configuration of the electrode for plasma generation is to use silicon carbide as the above-mentioned base material, use silicon as the metal, and use silicon carbide as the conductor plate. In addition, it is preferable to use CVD-silicon carbide for the conductor plate. In addition, the so-called CVD-silicon carbide is formed by vaporizing powdery or massive SiC and vapor-depositing it on a carbon plate or the like. In addition, it is desirable that when the metal is impregnated into the base material in the plasma generating electrode, the conductor plate is fusion-bonded to the metal matrix composite material through the metal.

In addition, in the electrode for plasma generation, gas holes for ejecting processing gas into the processing atmosphere of the substrate are formed by a plurality of sleeves penetrating the metal matrix composite material and the conductor plate, and the metal matrix The composite material, the bushing, and the conductor plate can be formed by metal fusion bonding. In this case, when the metal is impregnated into the above-mentioned base material, it is desirable that the metal matrix composite material, the sleeve, and the conductor plate are fusion-bonded to each other through the metal. And, for example, silicon carbide, yttrium oxide, or the like is used as the above-mentioned sleeve.

In addition, the plasma processing apparatus of the present invention is characterized in that it has: an airtight processing container; The electrode for generating plasma provided inside the processing container; a gas supply unit for introducing a processing gas into the processing container; forming a high-frequency electric field between the mounting table and the electrode facing it; A plasma generating unit that converts a process gas into plasma, and processes a substrate with plasma. In addition, the structure of the above-mentioned plasma processing apparatus is: the above-mentioned processing gas introduction unit has a shower head for ejecting gas from a plurality of holes, the above-mentioned electrode has a function as a shower plate under the above-mentioned shower head, and a plurality of gas ejection holes are formed. .

The present invention constitutes a metal substrate by impregnating a metal matrix composite material in a base material formed of porous ceramics, and fusing and bonding the metal matrix composite material to a conductor plate formed of a plasma-resistant material to form a plasma. The electrode is used for generation, so the metal matrix composite material and the conductor plate are uniformly bonded in the plane. Thus, since local excessive stress due to thermal expansion dimensional difference does not occur, the risk of cracking of the conductor plate is small. Moreover, since the joint surface of the metal matrix composite material and the conductor plate is filled with molten metal, the electrical conduction and heat conduction are good, and the electrical conduction and heat conduction are uniform in the plane, and individual differences of the electrodes are not easily generated. As a result, since uniform plasma is obtained in the plane parallel to the substrate, the substrate can be processed with plasma having good in-plane uniformity. In addition, since there is no mechanical contact portion (friction portion), friction between the two due to thermal expansion and contraction does not occur, so generation of dust is also suppressed.

Moreover, if silicon carbide is used as various materials of the porous ceramic base material and the conductor plate, if silicon is used as the molten metal at the same time, the difference in linear expansion coefficient of the joint surface of the metal matrix composite material equivalent to the metal base and the conductor plate can be approached Zero (because there is a difference in linear expansion between silicon carbide and silicon, it cannot be zero), and damage to the conductor plate can be reliably prevented.

Description of drawings

FIG. 1 is a cross-sectional view showing an RIE plasma etching apparatus using an electrode according to an embodiment of the present invention as an upper electrode.

Fig. 2 is an enlarged cross-sectional view showing an upper electrode of the device in Fig. 1 .

Fig. 3 is a schematic diagram illustrating a method of joining a composite material and a conductor plate with an impregnated metal when the base material is impregnated with a metal to form a composite material.

FIG. 4 is a schematic diagram showing the state of the upper electrode of the device of FIG. 1 .

Fig. 5 is a schematic diagram illustrating another example of a method of forming gas ejection holes formed in the upper electrode.

6 is a schematic diagram illustrating another example of a method of forming gas ejection holes formed in the upper electrode.

Fig. 7 is a table showing material combinations of base material, conductor plate and molten metal in the upper electrode of the apparatus of Fig. 1 .

Fig. 8 is a schematic sectional view showing a conventional plasma processing apparatus.

Symbol Description

W chip

2 processing containers

3 supporting stage

4 insulating boards

5 support table

6 nozzles

7 upper electrode

71 gas ejection holes

8 metal matrix composites

81 bonding layer

82 conductor plate

83 holes

84 molten metal

85 bar (casing)

9 base material

Detailed ways

Next, embodiments of the present invention will be described. FIG. 1 is a cross-sectional view showing an RIE (Reactive Ion Etching) plasma etching apparatus to which an electrode according to an embodiment of the present invention is applied as a plasma processing apparatus as an upper electrode. 2 in FIG. 1 is a processing vessel (vacuum chamber) made of, for example, aluminum. The processing container 2 is an airtight structure composed of a small-diameter cylindrical upper portion 2a and a large-diameter cylindrical lower portion 2b. The processing container 2 is provided with a supporting stage 3 which horizontally supports a semiconductor wafer W (hereinafter referred to as a wafer) as a substrate to be processed and is a mounting table which functions as a lower electrode. The supporting stage 3 is made of, for example, aluminum, and is supported by a conductor supporting base 5 via an insulating plate 4 . Further, on the outer periphery above the support stage 3, a focus ring 31 formed of, for example, silicon (Si) is provided. The lower portion of the support table 5 is covered by a protective layer (cover) 32, and a baffle plate 33 is arranged on the outside of the above-mentioned support table 5. conduction. In addition, the above-mentioned processing container 2 is grounded.

A shower head 6 is formed on the top of the processing container 2 as a gas supply unit for introducing a processing gas into the processing container 2 , and the lower surface of the shower head 6 is constituted by an upper electrode 7 functioning as a shower plate. The upper electrode 7 is provided parallel to the support stage 3 functioning as a lower electrode, and has a plurality of gas ejection holes 71 formed therein. That is, the support stage 3 and the upper electrode 7 as the lower electrode constitute a pair of parallel plate electrodes. In addition, the above-mentioned upper electrode 7 is grounded through the processing container 2 .

An exhaust port 21 is formed on the bottom wall of the lower portion 2 b of the processing container 2 , and a vacuum pump 22 is connected to the exhaust port 21 . Furthermore, by operating the vacuum pump 22, the inside of the processing container 2 can be depressurized to a predetermined vacuum degree. On the other hand, a loading/unloading port 23 for loading and unloading wafers W is provided on the side wall of the upper portion 2 a of the processing container 2 , and the loading/unloading port 23 is opened and closed by a gate valve 24 .

The first high-frequency power supply 26 for plasma formation and the second high-frequency power supply 27 for ion introduction are connected to the above-mentioned supporting stage 3 by means of matchers 28 and 25, and the first high-frequency power supply 26 and the The second high-frequency power supply 27 supplies high-frequency power of a predetermined frequency to the supporting stage 3 . Furthermore, the second high-frequency power supply 27 supplies high-frequency power lower in frequency than the first high-frequency power supply 26 .

An electrostatic chuck 34 for electrostatically attracting and holding the wafer W is provided on the surface of the supporting stage 3 . Electrodes 34a are present between insulators 34b to constitute the electrostatic chuck 34, and a DC power supply 35 is connected to the electrodes 34a. Then, by applying a voltage from the power source 35 to the electrode 34a, the wafer W is attracted and held by electrostatic force, for example, Coulomb force.

In addition, inside the supporting stage 3, a cooling chamber 36 is provided. In the cooling chamber 36, the refrigerant is introduced through the refrigerant introduction pipe 36a, discharged from the refrigerant discharge pipe 36b, and circulated. The stage 3 is supported, and heat is transferred to the wafer W, thereby controlling the processing surface of the wafer W to a desired temperature.

In addition, even if the inside of the processing container 2 is evacuated by the vacuum pump 22 to maintain a vacuum, in order to effectively cool the wafer W by the refrigerant circulating in the cooling chamber 36, the cooling gas is passed through the gas introduction device 37 and passed through the gas supply line. 38 , is supplied between the surface of the electrostatic chuck 34 and the inside of the wafer W. In this way, since the cooling gas is introduced, the cooling and heat of the refrigerant are efficiently transferred to the wafer W, and the cooling efficiency of the wafer W can be improved.

The shower head 6 is provided with a gas introduction port 72 at its upper portion, and a space 73 for gas diffusion is formed inside. A gas supply pipe 74 is connected to the gas introduction port 72 , and a processing gas supply system 75 for supplying a processing gas is connected to the other end of the gas pipe 74 .

On the other hand, around the upper portion 2a of the processing container 2, two multi-pole ring magnets 25a, 25b sandwiching the loading/unloading port 23 are arranged. The multi-pole ring magnets 25a and 25b are formed by attaching a plurality of anisotropic segment columnar magnets to a housing of a ring-shaped magnetic body, and the directions of adjacent segment columnar magnets are opposite to each other. As a result, magnetic lines of force are formed between adjacent segment magnets, and a magnetic field is formed only in the peripheral portion of the processing space between the upper and lower electrodes, thereby confining the plasma in the processing space.

Next, the structure of the upper electrode 7 will be described in detail. As shown in the enlarged cross-sectional view of FIG. 2 , the upper electrode 7 is circular in shape with a bonding layer 81 interposed between a metal matrix composite material 8 impregnated with a metal in a cylindrical base material formed of porous ceramics. The structure of the conductor plate 82 . Since the upper electrode 7 is the part that releases the lines of electric force for plasmaizing the process gas, in order to generate plasma with good in-plane uniformity on the surface of the wafer W, the size of the bonding surface of the metal matrix composite material 8, that is, the size of the conductive plate 82 must be adjusted. The size is the same as the size of the processed surface of the wafer W, or larger, preferably larger than the processed surface of the wafer W.

A method of manufacturing the upper electrode 7 will be specifically described with reference to FIG. 3 . First, a conductive plate 82 made of CVD-silicon carbide (SiC) is stacked on a porous base material 9 made of silicon carbide (SiC) ( FIG. 3( a )). Then, molten metal (molten metal) made of silicon (Si) is pressurized with air pressure or the like to impregnate base material 9 to form metal matrix composite 8 ( FIG. 3( b )). After the molten metal spreads over the metal matrix composite material 8, the pressurization of the molten metal is continued, and the surface (joint surface) of the metal matrix composite material 8 and the surface of the conductor plate 82 are bonded by the molten metal seeping out from the surface of the metal matrix composite material 8. They are bonded to each other to form a bonding layer 81 ( FIG. 3( c )). Then, by cooling, upper electrode 7 is obtained ( FIG. 3( d )). In this manufacturing method, the molten metal is impregnated into the base material 9 by pressurizing with air pressure or the like (pressurized infiltration method), but it is not limited to this method, and it is also possible to utilize Capillary phenomenon impregnates the base material 9 with molten metal (natural impregnation method). Also, the metal matrix composite material 8 in which the base material 9 is impregnated with molten metal has electrical conductivity equivalent to that of a metal while maintaining the strength possessed by the base material 9, so it is used as a metal base.

In addition, in this example, the upper electrode 7 (electrode for plasma generation) is constituted by using silicon carbide as the base material 9, CVD-silicon carbide as the conductor plate 82, and silicon as the molten metal, but the material combination of the upper electrode 7 Not limited to this. And, other combinations are described later.

Next, an example of a method of forming the gas ejection holes 71 formed in the upper electrode 7 will be described. In this method, the upper electrode 7 is cut using a cutting tool such as a drill to form a gas ejection hole 71 having a diameter of, for example, 0.5 to 1 mm. However, since the hardness of the metal matrix composite material 8 constituting the upper electrode 7, the bonding layer 81, and the conductor plate 82 are different from each other, cutting is performed for each material by changing a drill suitable for cutting the material. That is, the metal matrix composite material 8 , bonding layer 81 , and conductor plate 82 are replaced in order, and the drill is drilled to form the discharge hole 71 in the upper electrode 7 . In addition to this method, a method for forming the gas ejection holes 71 in the upper electrode 7 will be described later.

Next, a process of etching a predetermined film formed on the surface of the wafer W with plasma using the plasma etching apparatus configured as described above will be described. First, the gate valve 24 is opened, the wafer W is carried into the processing container 2 from the loading and unloading port 23, and after being placed on the supporting stage 3, the processing container 2 is exhausted to a predetermined level through the exhaust port 21 by the vacuum pump 22. of vacuum.

Then, the processing gas such as fluorine (F) from the processing gas supply system 75 reaches the space 73 of the shower head 6 through the gas supply pipe 74 and the gas inlet 72, and is ejected from the gas ejection hole 71 to make the gas in the processing container 2 The gas pressure is, for example, 13 to 1333 Pa (100 mTorr to 10 Torr). In this state, high frequency power of, for example, 100 MHz is supplied to the supporting stage 3 from the first high frequency power supply 26 . The high-frequency wave starts from the supporting stage 3, passes through the conductor plate 82 of the upper electrode 7 and the metal matrix composite material 8, flows to the processing container 2, and is grounded. In this way, a high-frequency electric field is formed in the processing atmosphere.

In addition, in order to control the ion energy of the plasma, high-frequency power of, for example, 3.2 MHz is supplied from the second high-frequency power supply 27 . At this time, since a predetermined voltage is applied from the DC power supply 35 to the electrode 34a of the electrostatic chuck 34, the wafer W is adsorbed and held on the electrostatic chuck 34 by, for example, Coulomb force. A high-frequency electric field is formed between the object stages 3 . In addition, since the dipole ring magnets 25a, 25b form a horizontal electric field between the shower head 6 and the supporting stage 3, an orthogonal electromagnetic field is formed in the processing space between the electrodes where the wafer W exists, and the resulting electrons Drift, forming a magnetron discharge. Then, the process gas is turned into plasma by the magnetron discharge, and a predetermined film formed on the surface of the wafer W is etched by the plasma.

According to the above-mentioned embodiment, the metal base is constituted by impregnating silicon as a metal (semiconductor is also treated as a metal in the present invention) in the base material 9 formed of porous ceramic silicon carbide, and the metal substrate is formed. The base composite material 8 is fused and bonded to the conductor plate 82 formed of CVD-silicon carbide which is a plasma-resistant material to constitute the upper electrode 7 (electrode for plasma generation), so the metal matrix composite material 8 and the conductor plate 82 are placed In-plane uniform bonding. Thus, unlike the case of fixing the peripheral portion of the conductor plate 82 with screws, local excessive stress occurs due to thermal expansion dimensional difference, so the risk of the conductor plate 82 being broken is small. And, the joint surface of the metal matrix composite material 8 and the conductor plate 82 is filled with molten metal (silicon), so, as shown in FIG. It is uniform in the plane, and individual differences in the upper electrode 7 are less likely to occur. As a result, the in-plane uniformity of the potential and temperature of the conductor plate 82 is improved, and uniform plasma is obtained in the plane parallel to the wafer W placed on the supporting stage 3 as the lower electrode. Therefore, it is possible to perform plasma processing on the wafer W with good in-plane uniformity. And since there is no mechanical contact part (friction part), there will be no friction between the two due to thermal expansion and contraction, and the generation of dust is also suppressed.

Moreover, if silicon carbide is used as the porous ceramic base material 9 and the conductor plate 82, and silicon is used as the molten metal at the same time, the difference in the linear expansion coefficient of the junction surface of the metal matrix composite material 8 and the conductor plate 82 corresponding to the metal base can be close to Zero, the breakage of the conductor plate can be reliably prevented.

In addition, in the above-described embodiment, as the base material 9 , silicon nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), or the like can be used, for example, in addition to silicon carbide. Furthermore, as the conductor plate 82 , for example, silicon (Si) or the like can be used other than silicon carbide. In addition, as the molten metal impregnated into the above-mentioned base material 9 , aluminum (Al) or the like can be used, for example, in addition to silicon.

Furthermore, as a method of forming the gas ejection hole 71 on the upper electrode 7, as shown in FIG. By fusing the base material 9 and the conductor plate 82, blocking the hole 83 with molten metal 84 (FIG. 5(b)), and cutting the molten metal 84 blocking the hole 83 with a drill, a jet can be formed on the molten metal 84. Exit hole 71 (Fig. 5(c)).

And, as shown in FIG. 6, before performing fusion bonding, a hole penetrating the base material 9 and the conductor plate 82 is formed in advance, and the rod material 85 is inserted into the hole (FIG. 6(a)). In this state, by performing Fusion bonding, the base material 9, the conductor plate 82, and the rod 85 are each joined together by molten metal impregnated in the base material 9 (Fig. The material 8 and the rod material 85 on the conductor plate 82 form the gas ejection hole 71 having a sleeve structure (FIG. 6(c)). In this case, as the rod material (sleeve) 85, for example, brittle materials such as silicon carbide (SiC) and yttrium oxide (Y ₂ O ₃ ) are preferable.

Among the materials of the base material 9, the conductor plate 82, and the molten metal, the present inventors studied a preferable combination of materials for the upper electrode 7, and the results are shown in FIG. 7 . In addition, the so-called A of the gas hole processing method shown in FIG. 7 is to replace the metal matrix composite material 8, the bonding layer 81 and the conductor plate 82 in this order as described above. The method of forming the ejection hole 71 on the top; B is the gas hole processing method explained using FIG. 5; and C is the gas hole processing method described using FIG. 6. In FIG. 7 , for the base material 9 constituting the upper electrode 7 , the conductor plate 82 , and the molten metal, symbols ◯ are assigned to the places corresponding to the selected materials. Combinations of the base material 9 constituting the upper electrode 7, the conductor plate 82, and the molten metal are represented by P1 to P12. For example, in P2, SiC is selected as the base material 8, Si is selected as the conductor plate 82, and Al is selected as the molten metal. In FIG. 7 , aluminum is avoided as much as possible from the point of view of preventing metal contamination in the portion exposed to the plasma. In this intention, the combination is determined. However, in the case of using silicon as the conductor plate 82, the melting point is lower than that of silicon. Starting from the material, aluminum is used as the molten metal. In this case, since aluminum is used as the molten metal, it can be said that there is almost no concern of metal contamination. As for the material of the sleeve 85, Al ₂ O ₃ , AiN, SiO ₂ , SiN, Y ₂ O ₃ , SiC, etc. can be mentioned. From the viewpoint of preventing metal contamination, Al ₂ O ₃ and AiN cannot be used _. There is a problem with strength, and the price of SiN is very high. Therefore, it can be said that Y ₂ O ₃ and SiC are preferable from the standpoint of avoiding aluminum-containing raw materials, high strength, and low cost.

In addition, when making the upper electrode 7, it is preferable to select the materials of the base material 9 and the conductor plate 82 so that the dimensional difference between the base material 9 and the conductor plate 82 due to thermal expansion is controlled within 30%.

In addition, the substrate of the present invention is not limited to the wafer of the above-mentioned embodiment, and may be a glass substrate for a flat panel used for a liquid crystal display, a plasma display, or the like, or a ceramic substrate.

Claims (11)

1. a plasma takes place use electrode, be used for to substrate carry out plasma treatment, and the processed face of substrate be oppositely arranged, it is characterized in that having:

Metal is contained be immersed in the mother metal that forms by porous ceramic, possess at least metal-base composites with processed whole relative composition surface of substrate; With

Fusion is bonded on the conductor plate that the material by plasma-resistance on the composition surface of this metal-base composites forms by metal.

2. plasma as claimed in claim 1 takes place to use electrode, it is characterized in that:

Described mother metal is selected from carborundum, silicon nitride, aluminium oxide and aluminium nitride.

3. plasma as claimed in claim 1 takes place to use electrode, it is characterized in that:

The metal that fusion is used in engaging is silicon or aluminium.

4. plasma as claimed in claim 1 takes place to use electrode, it is characterized in that:

Described conductor plate is silicon or silicon nitride.

5. plasma as claimed in claim 1 takes place to use electrode, it is characterized in that:

Described mother metal is a carborundum, and the metal that fusion is used in engaging is silicon, and conductor plate is a carborundum.

6. plasma as claimed in claim 5 takes place to use electrode, it is characterized in that:

Described conductor plate is a CVD-carborundum.

7. take place to use electrode as each described plasma in the claim 1～6, it is characterized in that:

When metal being contained be immersed in the described mother metal, the conductor plate fusion is bonded on the metal-base composites by this metal.

8. take place to use electrode as each described plasma in the claim 1～6, it is characterized in that:

By connecting a plurality of sleeve pipes of described metal-base composites and conductor plate, be formed for the gas orifice of ejection processing gas in the processing atmosphere of substrate,

Described metal-base composites, sleeve pipe and conductor plate are engaged by metal melting between separately.

9. plasma as claimed in claim 8 takes place to use electrode, it is characterized in that:

When metal being contained be immersed in the described mother metal, by this metal with metal-base composites, sleeve pipe and conductor plate separately between fusion engage.

10. plasma takes place to use electrode as claimed in claim 8 or 9, it is characterized in that:

Described sleeve pipe is carborundum or yittrium oxide.

11. a plasma processing apparatus is characterized in that:

Have: airtight container handling; Be arranged on this container handling inside, be used to keep the mounting table that is also used as electrode of substrate; In the mode relative, be arranged on each described electrode in the claim 1～10 of described container handling inside with described mounting table; Be used in described container handling, importing the gas supply part of handling gas; Be used between described mounting table and described electrode on the other side, forming high-frequency electric field, with the plasma generating unit of described processing gaseous plasmaization,

By plasma substrate is handled.

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