CN100590904C - Patterning process and method for manufacturing organic thin film transistor using the same - Google Patents
Patterning process and method for manufacturing organic thin film transistor using the same Download PDFInfo
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- CN100590904C CN100590904C CN200610083901A CN200610083901A CN100590904C CN 100590904 C CN100590904 C CN 100590904C CN 200610083901 A CN200610083901 A CN 200610083901A CN 200610083901 A CN200610083901 A CN 200610083901A CN 100590904 C CN100590904 C CN 100590904C
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- PYJJCSYBSYXGQQ-UHFFFAOYSA-N trichloro(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](Cl)(Cl)Cl PYJJCSYBSYXGQQ-UHFFFAOYSA-N 0.000 claims description 6
- FZMJEGJVKFTGMU-UHFFFAOYSA-N triethoxy(octadecyl)silane Chemical compound CCCCCCCCCCCCCCCCCC[Si](OCC)(OCC)OCC FZMJEGJVKFTGMU-UHFFFAOYSA-N 0.000 claims description 6
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 5
- JQQSUOJIMKJQHS-UHFFFAOYSA-N pentaphene Chemical compound C1=CC=C2C=C3C4=CC5=CC=CC=C5C=C4C=CC3=CC2=C1 JQQSUOJIMKJQHS-UHFFFAOYSA-N 0.000 claims description 5
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Abstract
A patterning process includes the following steps. First, a substrate is provided. Then, a patterned self-organized molecular material layer is formed on the substrate. Then, an organic material layer is formed on the substrate, and the organic material layer covers the patterned self-organized molecular material layer. Thereafter, a portion of the organic material layer is removed, wherein the organic material layer in contact with the patterned self-organized molecular material layer remains, thereby forming a patterned organic material layer. By using the patterned self-organized molecular material layer, the junction characteristics of the organic material layer can be improved, and the pattern precision of the patterned organic material layer can be improved. The invention also provides a manufacturing method of the organic thin film transistor using the patterning process.
Description
Technical field
The invention relates to the manufacture method of a kind of patterning process and OTFT, and particularly relevant for a kind of self-organizing molecular material layer (Self-Assembled Monolayer that utilize, SAM) carry out patterning process, and OTFT (Organic Thin-Film Transistor, manufacture method O-TFT) of utilizing above-mentioned patterning process.
Background technology
Because organic semiconductor assembly (Organic Semiconductor Device) can be produced on soft plastic or the thin metal matrix plate, thus its have in light weight, cost is low, pliability advantage and characteristics such as (Flexibility).Wherein, (Organic Thin-Film Transistor O-TFT) has been subjected to the educational circles of many advanced countries and the attention on the industrial research to OTFT.
Figure 1A～Fig. 1 F is shown as the steps flow chart generalized section of the manufacture method of known a kind of OTFT.Please refer to Figure 1A, at first on substrate 110, form a grid 120.Then, please refer to Figure 1B, on substrate 110, form a dielectric layer 130 and cover above-mentioned grid 120.Continue it, please refer to Fig. 1 C, form organic material layer 140 on dielectric layer 130, this organic material layer 140 is the usefulness as the organic semiconductor layer 170 of follow-up formation OTFT 100.Come again, please refer to Fig. 1 D, on organic material layer 140, form patterning photoresistance 150, and carry out patterning process 160, and form as the organic semiconductor layer 170 as shown in Fig. 1 E for organic material layer 140.Afterwards, please refer to Fig. 1 F, on organic semiconductor layer 170, make source electrode 180a, drain electrode 180b.So far, finish by OTFT that assembly constituted 100 such as grid 120, organic semiconductor layer 170, source electrode 180a, drain electrode 180b.
In the manufacture method of above-mentioned OTFT 100 because dielectric layer 130 uses inorganics usually, so that the face that the connects characteristic between organic semiconductor layer 170 and the dielectric layer 130 is relatively poor.And, be organic material as the patterning photoresistance 150 as shown in Fig. 1 D with organic material layer 140, make to have bigger bond ability between patterning photoresistance 150 and the organic material layer 140.Therefore, when desire continued to remove patterning photoresistance 150 when finishing patterning process 160, part organic semiconductor layer 170 can peel off with patterning photoresistance 150, made organic semiconductor layer 170 produce as the rough surface as shown in Fig. 1 E.In addition, therefore organic semiconductor layer 170 also may come off from dielectric layer 130, makes the making yield of OTFT 100 descend.
Moreover, utilize patterning photoresistance 150 to carry out patterning process 160 and also can produce other problem for organic material layer 140.In more detail; owing to being utilizes patterning photoresistance 150 to remove the organic material layer 140 that is not subjected to its protection as shielding; so; and be difficult for defining the active region (being organic semiconductor layer 170) of OTFT 100, thereby cause the operating characteristic of OTFT 100 to descend and problem such as the active region leakage current is excessive with good pattern precision.
Summary of the invention
The object of the present invention is to provide a kind of patterning process, it can come the pattern of definitions component with good pattern precision.
Another object of the present invention provides a kind of manufacture method of OTFT, and it can improve the face that the connects characteristic of the organic semiconductor layer that is positioned at active region, and with good pattern precision definition organic film channel layer.
For achieving the above object, patterning process provided by the invention comprises:
One substrate is provided;
Form a patterning self-organizing molecular material layer on this substrate;
Form an organic material layer on this substrate, and this organic material layer covers this patterning self-organizing molecular material layer; And
Remove this organic material layer of part, wherein this organic material layer that contacts with this patterning self-organizing molecular material layer can retain, and forms a patterned organic material layer.
Described patterning process, the method that wherein forms this patterning self-organizing molecular material layer comprises:
Form a self-organizing molecular material layer on this substrate;
One light shield is provided;
Utilize this light shield that this self-organizing molecular material layer is carried out an exposure manufacture process; And
This self-organizing molecular material layer develops.
Described patterning process, the method that wherein removes this organic material layer of part comprises:
One solvent is provided; And
Utilize this substrate of this solvent clean.
Described patterning process, wherein the material of this patterning self-organizing molecular material layer be selected from octadecyltriethoxy silane, octadecyl trichlorosilane, hexamethyldisiloxane and combination thereof one of them.
Described patterning process, wherein the material of this organic material layer comprises pentaphene.
The manufacture method of OTFT provided by the invention, this method comprise formation one grid, a dielectric layer, an organic semiconductor layer and source, it is characterized in that:
Before forming this organic semiconductor layer, form a patterning self-organizing molecular material layer earlier.
The manufacture method of described OTFT, the method that wherein forms this patterning self-organizing molecular material layer comprises:
Form a self-organizing molecular material layer on this dielectric layer;
One light shield is provided;
Utilize this light shield that this self-organizing molecular material layer is carried out an exposure manufacture process; And
This self-organizing molecular material layer develops.
The manufacture method of described OTFT, wherein this organic semiconductor layer covers this patterning self-organizing molecular material layer, and when removing this organic semiconductor layer of part, this organic semiconductor layer that contacts with this patterning self-organizing molecular material layer can retain, and forms the organic semiconductor layer of a patterning.
The manufacture method of described OTFT, wherein this grid is to be formed at this source/drain below.
The manufacture method of described OTFT, wherein this grid is to be formed at this source/drain top.
In other words, based on above-mentioned or other purpose, the present invention proposes a kind of patterning process, and it comprises the following steps.At first, provide a substrate.Then, form a patterning self-organizing molecular material layer (SAM) on this substrate.Continue it, form an organic material layer on this substrate, and organic material layer overlay pattern self-organizing molecular material layer.Afterwards, remove the part organic material layer, wherein the organic material layer that contacts with patterning self-organizing molecular material layer can retain, and forms a patterned organic material layer.
In one embodiment of this invention, the method for above-mentioned formation patterning self-organizing molecular material layer comprises the following steps.At first, form a self-organizing molecular material layer on substrate.Then, provide a light shield.Continue it, utilize light shield that self-organizing molecular material layer is carried out an exposure manufacture process.Afterwards, this self-organizing molecular material layer that develops.
In one embodiment of this invention, the above-mentioned method that removes the part organic material layer comprises the following steps.At first, provide a solvent.Afterwards, utilize this solvent clean substrate.
In one embodiment of this invention, the material of above-mentioned patterning self-organizing molecular material layer is to be selected from octadecyltriethoxy silane (octadecyltriethoxysilane, ODS), octadecyl trichlorosilane (octadecyltrichlorosilane, OTS), hexamethyldisiloxane (1,1,1,3,3,3-hexamethyldisilazane, HMDS) and make up one of them.
In one embodiment of this invention, the material of above-mentioned organic material layer comprises pentaphene (pentacene).
Based on above-mentioned or other purpose, the present invention reintroduces a kind of manufacture method of OTFT, the method comprises formation one grid, a dielectric layer, an organic semiconductor layer and source, it is characterized in that: before forming organic semiconductor layer, form a patterning self-organizing molecular material layer earlier.
In one embodiment of this invention, the method for above-mentioned formation patterning self-organizing molecular material layer comprises the following steps.At first, form a self-organizing molecular material layer on dielectric layer.Then, provide a light shield.Continue it, utilize light shield that self-organizing molecular material layer is carried out an exposure manufacture process.Afterwards, this self-organizing molecular material layer that develops.
In one embodiment of this invention, above-mentioned organic semiconductor layer overlay pattern self-organizing molecular material layer, and when removing the part organic semiconductor layer, the organic semiconductor layer that contacts with patterning self-organizing molecular material layer can retain, and forms the organic semiconductor layer of a patterning.
In one embodiment of this invention, above-mentioned grid is to be formed at the source/drain below.
In one embodiment of this invention, above-mentioned grid is to be formed at the source/drain top.
Patterning process of the present invention utilizes patterning self-organizing molecular layer material (patterned SAM) that organic semiconductor layer is carried out pattern definition, therefore, the pattern of definitions component can be come with good pattern precision, and the face that the connects characteristic of organic semiconductor layer can be promoted.In addition, utilize the manufacture method of the OTFT of patterning process of the present invention, can improve the face that the connects characteristic of the organic semiconductor layer that is positioned at active region effectively, and can be with good pattern precision definition organic semiconductor layer.
Description of drawings
Figure 1A～Fig. 1 F is shown as the steps flow chart generalized section of the manufacture method of known a kind of OTFT.
Fig. 2 A～Fig. 2 G is shown as the steps flow chart generalized section of a kind of patterning process in a preferred embodiment of the present invention.
Fig. 3 is shown as the generalized section of a kind of OTFT of preferred embodiment of the present invention.
Fig. 4 A～Fig. 4 G is shown as the steps flow chart generalized section of the manufacture method of the OTFT among Fig. 3.
Fig. 5 is shown as the generalized section of the another kind of OTFT of preferred embodiment of the present invention.
Embodiment
For above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
The patterning process proposed by the invention and the manufacture method of OTFT are to utilize the self-organizing molecular layer to carry out patterning process accurately for organic material layer.And the face that the connects characteristic of organic material layer can be improved by the self-organizing molecular layer.The following description is preferred embodiment of the present invention, but is not in order to limit the present invention.
Fig. 2 A～Fig. 2 G is shown as the steps flow chart generalized section of a kind of patterning process in a preferred embodiment of the present invention.
At first, provide a substrate 200, as shown in Fig. 2 A.In one embodiment, this substrate 200 can be to contain the plastics of bendable of barrier layer or metal forming substrate, silicon substrate, or glass substrate.
Then, form a patterning self-organizing molecular material layer 210 ' (patterned SAM) (as shown in Fig. 2 E) on this substrate 200.In one embodiment, the method for above-mentioned formation patterning self-organizing molecular material layer 210 ' for example is the step that adopts as shown in Fig. 2 B～Fig. 2 E.Please earlier with reference to Fig. 2 B, at first, form a self-organizing molecular material layer 210 on substrate 200, wherein, the method that forms self-organizing molecular material layer 210 for example is rubbing method or vapour deposition method.And, the material of self-organizing molecular material layer 210 for example be selected from octadecyltriethoxy silane, octadecyl trichlorosilane, hexamethyldisiloxane and combination thereof one of them.
Then, as shown in Fig. 2 C, provide a light shield 220.In one embodiment, this light shield 220 has the assembly pattern (not shown) that can transfer on the self-organizing molecular material layer 210.
Continue it, as shown in Fig. 2 D, utilize 220 pairs of self-organizing molecular materials of light shield layer 210 to carry out an exposure manufacture process 230.In one embodiment, above-mentioned exposure manufacture process 230 employed light sources comprise ultraviolet light.Preferably, the time of exposure manufacture process 230 irradiating ultraviolet light is between 200～300 seconds so that the assembly pattern in due course between in can fully transfer on the self-organizing molecular material layer 210.Particularly, when the material of self-organizing molecular material layer 210 was above-mentioned ODS, it had good absorbability for ultraviolet light, and therefore, the assembly pattern on the light shield 220 can be transferred on the self-organizing molecular material layer 210 accurately, and improves the precision of patterning.
Afterwards, as shown in Fig. 2 E, the self-organizing molecular material layer 210 after the above-mentioned exposure of developing.So far, finish the processing procedure of patterning self-organizing molecular material layer 210 '.Particularly, owing to self-organizing molecular material layer 210 can be decomposed after irradiating ultraviolet light, so, make the self-organizing molecular material layer 210 that has shone ultraviolet light after development step, to be removed.This development step can be the development step in the general manufacture of semiconductor, the self-organizing molecular material layer 210 that it for example has been to use soft organic solvent to remove to decompose through irradiating ultraviolet light, and detailed steps is not described in detail at this.
Please continue F, form an organic material layer 240 on substrate 200 with reference to Fig. 2, and organic material layer 240 overlay pattern self-organizing molecular material layers 210 '.In one embodiment, the material of organic material layer 240 comprises pentaphene.And the above-mentioned method that forms organic material layer 240 on substrate 200 comprises rubbing method or vapour deposition method.
Afterwards, please refer to Fig. 2 G, remove part organic material layer 240, wherein the organic material layer 240 that contacts with patterning self-organizing molecular material layer 210 ' can retain, and forms a patterned organic material layer 240 '.In one embodiment, remove the method for part organic material layer 240, comprise the following steps.At first, provide a solvent 250, this solvent for example is water or organic solvent.Afterwards, utilize this solvent 250 cleaning base plates 200.Because the bond ability between energy force rate organic material layer 240 of the bond between organic material layer 240 and the patterning self-organizing molecular material layer 210 ' and the solvent 250 is also big, so, when cleaning organic material layer 240, can form patterned organic material layer 240 ' naturally in the top of patterning self-organizing molecular material layer 210 ' with solvent 250.
It should be noted that patterning process of the present invention does not need to use patterning photoresistance 150 (as shown in Fig. 1 D) to come patterned organic material layer 240.Therefore, the present invention do not have known in when removing patterning photoresistance 150, the problem of supervening that organic semiconductor layer 170 peels off and the patterning precision is relatively poor.
And utilization of the present invention is for uv absorption capacity self-organizing molecular material layer 210 preferably, and can directly the assembly pattern on the light shield 220 be transferred on the self-organizing molecular material layer 210.Therefore, the patterning self-organizing molecular material layer 210 ' of formation has higher pattern precision, and then can define the pattern of organic material layer 240 exactly.In addition, make self-organizing molecular material layer 210 between organic material layer 240 and substrate 200, also can improve the face that the connects characteristic of organic material layer 240.
Moreover, utilize bond ability between organic material layer 240 and the patterning self-organizing molecular material layer 210 ' much larger than the characteristic of the bond ability between organic material layer 240 and the substrate 200, and can remove the organic material layer 240 that does not contact with solvent 250 like a cork with patterning self-organizing molecular material layer 210 '.Therefore, can simplify processing procedure and improve the yield of patterning process.
Utilize above-mentioned patterning process can define the active region of OTFT effectively.Fig. 3 is shown as the generalized section of a kind of OTFT of preferred embodiment of the present invention.Please refer to Fig. 3, the manufacture method of OTFT 300 of the present invention comprises formation one grid 320, a dielectric layer 330, an organic semiconductor layer 350 ' and one source pole 360a/ drain electrode 360b, it is characterized in that: before formation organic semiconductor layer 350 ', form patterning self-organizing molecular material layer 340 ' earlier.Below will utilize the shown OTFT of Fig. 3 300 to be example, the manufacture method of OTFT of the present invention is described, but following explanation only in order to for example, does not limit the structure of the OTFT of the manufacture method manufacturing that utilizes OTFT of the present invention.
Fig. 4 A～Fig. 4 G is shown as the steps flow chart generalized section of the manufacture method of the OTFT among Fig. 3.Please refer to Fig. 4 A, a substrate 310 is provided earlier.In one embodiment, this substrate 310 can be plastics or metal forming substrate, silicon substrate or the glass substrate that contains the bendable of barrier layer.
Then, as shown in Fig. 4 B, on substrate 310, form a grid 320.In one embodiment, this grid 320 can be to cooperate micro image etching procedure and get via general thin film deposition process, or utilizes shady shielding (shadow mask) cooperation thin film deposition process and form, and is not described in detail at this.
Come again, as shown in Fig. 4 C, on substrate 310, form dielectric layer 330 and cover above-mentioned grid 320.In one embodiment, the method that forms this dielectric layer 330 can be chemical vapour deposition technique (Chemical Vapor Deposition, CVD) or other suitable method.And the material of this dielectric layer 330 for example is silica, silicon nitride or other organic dielectric materials, as polymethyl methacrylate (PMMA), hydrogeneous silicate (Hydrogen Silsesquioxane, HSQ) etc.
Continue it, on dielectric layer 330, form patterning self-organizing molecular material layer 340 ' (as shown in Fig. 4 E).In one embodiment, the method for above-mentioned formation patterning self-organizing molecular material layer 340 ' comprises the step as Fig. 4 D～Fig. 4 E.Please, at first on dielectric layer 330, form a self-organizing molecular material layer 340 earlier with reference to Fig. 4 D.In one embodiment, the method that forms this self-organizing molecular material layer 340 comprises rubbing method or vapour deposition method.And, the material of self-organizing molecular material layer 340 for example be selected from octadecyltriethoxy silane, octadecyl trichlorosilane, hexamethyldisiloxane and combination thereof one of them.
Please continue D, then, provide a light shield 370 with reference to Fig. 4.This light shield 370 has the assembly pattern that can be transferred on the self-organizing molecular material layer 340.Continue it, utilize 370 pairs of self-organizing molecular materials of light shield layer 340 to carry out an exposure manufacture process 380.Afterwards, this self-organizing molecular material layer 340 that develops, and form as the patterning self-organizing molecular material layer 340 ' as shown in Fig. 4 E.In one embodiment, exposure manufacture process 380 employed light sources can be ultraviolet lights, and preferably, the time of irradiating ultraviolet light is between 200～300 seconds so that the assembly pattern can be in due course between in fully transfer on the self-organizing molecular material layer 210.Particularly, when the material of self-organizing molecular material layer 340 was above-mentioned ODS, it had good absorbability for ultraviolet light, and therefore, the pattern on the light shield 370 can directly be transferred on the self-organizing molecular material layer 440, and makes it have good pattern precision.
Afterwards, as shown in Fig. 4 F～4G, go up the organic semiconductor layer 350 ' that forms patterning in patterning self-organizing molecular material layer 340 '.At first, please refer to Fig. 4 F, on substrate 310, form organic semiconductor layer 350 comprehensively.In one embodiment, the method that forms organic semiconductor layer 350 comprises rubbing method or vapour deposition method, and the material of organic semiconductor layer 350 for example is a pentaphene.As shown in Fig. 4 F and Fig. 4 G, organic semiconductor layer 350 overlay pattern self-organizing molecular material layers 340 ', and when removing part organic semiconductor layer 350, the organic semiconductor layer 350 that contacts with patterning self-organizing molecular material layer 340 ' can retain, and forms the organic semiconductor layer 350 ' of patterning.
In more detail, the above-mentioned method that removes part organic semiconductor layer 350 comprises the following steps.At first, provide a solvent 365, shown in Fig. 4 F.Afterwards, utilize solvent 365 cleaning base plates 310.In one embodiment, solvent 365 comprises water or organic solvent.Because the bond ability between energy force rate organic semiconductor layer 350 of the bond between organic semiconductor layer 350 and the patterning self-organizing molecular material layer 340 ' and the solvent 365 is also big, so, when cleaning organic semiconductor layer 350 with solvent 365, can form the organic semiconductor layer 350 ' of patterning in the top of patterning self-organizing molecular material layer 340 ' naturally, shown in Fig. 4 G.
At last, on patterning organic semiconductor layer 350, make source electrode 360a and drain electrode 360b, can obtain OTFT 300 as shown in Figure 3.It should be noted that above-mentioned grid 320 is to be formed at source electrode 360a/ drain electrode 360b below.So it is called bottom gate formula OTFT again.Yet, in other embodiments, utilize above-mentioned method also can form the OTFT 400 of top grid formula as shown in Figure 5, it forms a grid 420, a dielectric layer 430, an organic semiconductor layer 450 ' and one source pole 460a/ drain electrode 460b on substrate 410.The grid 420 of this embodiment is to be formed at source electrode 460a/ drain electrode 460b top, because the processing procedure of the OTFT 300 of manufacture method and above-mentioned Fig. 3 is similar, is no longer described in detail at this.It should be noted that form as the organic semiconductor layer 450 ' of the OTFT among Fig. 5 400 before, can form patterning self-organizing molecular material layer 440 ' earlier.By patterning self-organizing molecular material layer 440 ', pattern precision that can be good defines the active region of OTFT 400, and improves the face that the connects characteristic of organic semiconductor layer 450 '.
In addition, above-mentioned use patterning self-organizing molecular material layer 340 ', 440 ' definition organic semiconductor layer 350 ', 450 ' mode, be not limited to make above-mentioned two kinds of OTFT 300,400, it also can be applied in the OTFT of other structure, improving selection ratio, and improve the face that the connects characteristic of active layers for the active layers deposition of the active region of OTFT.
In sum, the manufacture method of patterning process of the present invention and OTFT has following advantage:
(1) utilizes the patterning process of self-organizing molecular material layer to have simple fabrication steps, and can define the pattern of organic semiconductor layer with good pattern precision.
(2) make self-organizing molecular material layer between organic material layer and substrate, can improve the face that the connects characteristic of organic material layer, and then can prevent that organic material layer from coming off from substrate.
(3) utilize the active region of self-organizing molecular material layer definition OTFT, the organic semiconductor layer that can obtain having good pattern precision.So, can improve the operating characteristic of OTFT and the phenomenon of reduction active region leakage current.
(4) make self-organizing molecular material layer between the organic semiconductor layer and substrate of active region, can improve the face that the connects characteristic of organic semiconductor layer, and prevent that organic semiconductor layer from coming off on substrate.So, can promote the making yield of OTFT.
Though the present invention describes as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this technical staff, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking content that claim defines.
Claims (9)
1. patterning process comprises:
One substrate is provided;
Form a patterning self-organizing molecular material layer on this substrate;
Form an organic material layer on this substrate, and this organic material layer covers this patterning self-organizing molecular material layer; And
Remove this organic material layer of part, wherein this organic material layer that contacts with this patterning self-organizing molecular material layer can retain, and forms a patterned organic material layer.
2. patterning process as claimed in claim 1, the method that wherein forms this patterning self-organizing molecular material layer comprises:
Form a self-organizing molecular material layer on this substrate;
One light shield is provided;
Utilize this light shield that this self-organizing molecular material layer is carried out an exposure manufacture process; And
This self-organizing molecular material layer develops.
3. patterning process as claimed in claim 1, the method that wherein removes this organic material layer of part comprises:
One solvent is provided; And
Utilize this substrate of this solvent clean.
4. patterning process as claimed in claim 1, wherein the material of this patterning self-organizing molecular material layer be selected from octadecyltriethoxy silane, octadecyl trichlorosilane, hexamethyldisiloxane and combination thereof one of them.
5. patterning process as claimed in claim 1, wherein the material of this organic material layer comprises pentaphene.
6. the manufacture method of an OTFT, this method comprises: form a grid on a substrate, form a dielectric layer then and be covered in this grid, form an organic semiconductor layer again on this dielectric layer, on this organic semiconductor layer, form source at last; Or
On this substrate, form this source/drain, form this organic semiconductor layer then on this source/drain, form this dielectric layer again and be covered in this organic semiconductor layer, on this dielectric layer, form this grid at last; It is characterized in that:
Before forming this organic semiconductor layer, form a patterning self-organizing molecular material layer earlier, wherein this organic semiconductor layer covers this patterning self-organizing molecular material layer, and when removing this organic semiconductor layer of part, this organic semiconductor layer that contacts with this patterning self-organizing molecular material layer can retain, and forms the organic semiconductor layer of a patterning.
7. the manufacture method of OTFT as claimed in claim 6, the method that wherein forms this patterning self-organizing molecular material layer comprises:
Form a self-organizing molecular material layer on this dielectric layer;
One light shield is provided;
Utilize this light shield that this self-organizing molecular material layer is carried out an exposure manufacture process; And
This self-organizing molecular material layer develops.
8. the manufacture method of OTFT as claimed in claim 6, wherein this grid is to be formed at this source/drain below.
9. the manufacture method of OTFT as claimed in claim 6, wherein this grid is to be formed at this source/drain top.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200610083901A CN100590904C (en) | 2006-06-06 | 2006-06-06 | Patterning process and method for manufacturing organic thin film transistor using the same |
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| CN200610083901A CN100590904C (en) | 2006-06-06 | 2006-06-06 | Patterning process and method for manufacturing organic thin film transistor using the same |
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| US9570302B1 (en) * | 2016-02-10 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of patterning a material layer |
| CN109301067B (en) * | 2018-08-01 | 2020-12-22 | 华南师范大学 | A kind of hexamethyldisilazane modified organic thin film transistor and preparation method thereof |
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| US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| US20030175551A1 (en) * | 2002-03-07 | 2003-09-18 | Smith Terrance P. | Surface modified organic thin film transistors |
| US20040161873A1 (en) * | 2002-11-25 | 2004-08-19 | Dimitrakopoulos Christos D. | Organic underlayers that improve the performance of organic semiconductors |
| US6828582B1 (en) * | 2003-09-04 | 2004-12-07 | Hitachi Ltd. | Thin film transistor, display device and their production |
| US20040245550A1 (en) * | 2003-06-09 | 2004-12-09 | International Business Machines Corporation | Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
| US20050186700A1 (en) * | 2004-02-23 | 2005-08-25 | Hagen Klauk | Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric |
| US20060115998A1 (en) * | 2004-11-30 | 2006-06-01 | Samsung Electronics Co., Ltd. | Method for forming pattern of organic insulating film |
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|---|---|---|---|---|
| US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| US20030175551A1 (en) * | 2002-03-07 | 2003-09-18 | Smith Terrance P. | Surface modified organic thin film transistors |
| US20040161873A1 (en) * | 2002-11-25 | 2004-08-19 | Dimitrakopoulos Christos D. | Organic underlayers that improve the performance of organic semiconductors |
| US20040245550A1 (en) * | 2003-06-09 | 2004-12-09 | International Business Machines Corporation | Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers |
| US6828582B1 (en) * | 2003-09-04 | 2004-12-07 | Hitachi Ltd. | Thin film transistor, display device and their production |
| US20050186700A1 (en) * | 2004-02-23 | 2005-08-25 | Hagen Klauk | Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric |
| US20060115998A1 (en) * | 2004-11-30 | 2006-06-01 | Samsung Electronics Co., Ltd. | Method for forming pattern of organic insulating film |
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