CN100585879C - Thin film diode, double scanning diode array substrate and liquid crystal display panel - Google Patents
Thin film diode, double scanning diode array substrate and liquid crystal display panel Download PDFInfo
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- CN100585879C CN100585879C CN200810166775A CN200810166775A CN100585879C CN 100585879 C CN100585879 C CN 100585879C CN 200810166775 A CN200810166775 A CN 200810166775A CN 200810166775 A CN200810166775 A CN 200810166775A CN 100585879 C CN100585879 C CN 100585879C
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Abstract
The thin film diode is suitable for being configured on a substrate. The thin film diode comprises a first electrode, an insulating layer, an active layer and a second electrode. The first electrode is arranged on the substrate, the insulating layer is arranged on the substrate to cover the first electrode, and the insulating layer is provided with an opening to expose a partial area of the first electrode. The active layer is configured on the first electrode and extends from the first electrode exposed by the opening to the insulating layer. The second electrode is configured on the insulating layer and the active layer. The active layer is at least positioned in the coverage range of the second electrode. The invention also provides a double scanning diode array substrate with the thin film diode and a liquid crystal display panel.
Description
Technical field
The invention relates to a kind of diode, array base palte and display floater, and particularly relevant for a kind of thin film diode (thin-film diode, TFD), double scanning diode array substrate (dual selectdiode array substrate) and display panels.
Background technology
Generally speaking, display panels is made of a thin-film transistor array base-plate, a liquid crystal layer and a colored optical filtering substrates.Wherein, thin-film transistor array base-plate has multi-strip scanning line, many data wires, a plurality of thin-film transistor and a plurality of pixel electrodes, under the suitable control of scan line and data wire, view data can successfully be passed to each pixel electrode by each thin-film transistor, and by the voltage difference between the common electrode on each pixel and the colored optical filtering substrates, to reach the purpose that image shows.
General thin-film transistor array base-plate (TFT array substrate) needs five road masking process (photolithography/etching process usually on making, PEP), if will further manufacturing cost be reduced, certainly will reduce the number of masking process further.Yet the manufacturing of current thin film transistor (TFT) array substrate is still with five road masking process, and its manufacturing cost can't reduce significantly.Therefore, the thin film diode liquid crystal display (TFD-LCDs) with nonlinear capacitor or thin film diode just little by little is developed and studies, to reduce manufacturing cost effectively.In detail, compared to general thin-film transistor array base-plate technology, the film layer structure of nonlinear capacitor or thin film diode is simply many compared to the film layer structure of thin-film transistor, and only need use still less the road masking process to finish on making.
In typical thin film diode liquid crystal display (TFD-LCD), only have single thin film diode (TFD) in each pixel, and this kind design is only applicable to show on the miniscope of limited GTG number.
In order to improve display quality, (dual select diode, DSD) display panels is developed and uses a kind of double scanning diode.Specifically, in the double scanning diode display panels, the pixel of each row is to adopt two parallel scanning beams (select lines) to drive, and two scan lines are electrically connected to each pixel electrode by two thin film diodes (TFDs) or nonlinear resistance.That is to say that each pixel electrode can be electrically connected to different scan lines respectively by two thin film diodes, thus, the double scanning diode display panels has the potentiality that show large-size images.
Figure 1A is a kind of partial top view of known double scanning diode substrate, and the generalized section of the thin film diode substrate that Figure 1B is illustrated for the hatching line AA ' along Figure 1A.Please refer to Figure 1A, double scanning diode array substrate 100 comprises a substrate 110, multi-strip scanning line 120 and a plurality of pixel cell 130.Scan line 120 is disposed on the substrate 110.Pixel cell 130 is disposed on the substrate 110, and each pixel cell 130 comprises two thin film diodes 132 and a pixel electrode 134.Pixel electrode 134 is respectively by one of them thin film diode 132 and different scan line 120 electrical connections.
Shown in Figure 1B, thin film diode 132 comprises one first electrode 132a, a nonlinear resistance material layer 132b and one second electrode 132c.The first electrode 132a is disposed on the substrate 110.Nonlinear resistance material layer 132b is disposed on the substrate 110 to cover the first electrode 132a.The second electrode 132c is disposed on the nonlinear resistance material layer 132b, and be electrically connected with pixel electrode 134, wherein contact with the second electrode 132c and produce short circuit for fear of the first electrode 132a, therefore, the area of the cross section A2 of nonlinear resistance material layer 132b must be greater than the cross section A1 area of the first electrode 132a, shown in Figure 1A and Figure 1B.
Yet, because nonlinear resistance material layer 132b adopts Silicon-rich dielectric material (as: SiN
x), therefore, nonlinear resistance material layer 132b is subjected to can producing faint photoelectric current after the irradiate light that light or backlight module sent of external environment, make thin film diode 132 still can form leakage current (leakage current) under the closed condition (off state) being in, thereby the electrical characteristic of thin film diode 132 is worsened.
In addition, because the second electrode 132c square crossing is in the first electrode 132a, therefore, be overlapped at the second electrode 132c on the fringe region 136 of the first electrode 132a and can produce the phenomenon of electric current puncture (breakdown) greatly because of voltage difference, and then the destruction of causing rete.
Summary of the invention
In view of this, the invention provides a kind of thin film diode, it has preferable electrical characteristic.
The present invention provides a kind of double scanning diode array substrate in addition, and it adopts above-mentioned thin film diode.
The present invention more provides a kind of display panels, and it adopts above-mentioned double scanning diode array substrate, to promote its display quality.
The present invention proposes a kind of thin film diode, and it is suitable for being disposed on the substrate.This thin film diode comprises one first electrode, an insulating barrier, an active layers (active layer) and one second electrode.First electrode is disposed on the substrate.Insulating barrier is disposed on the substrate to cover first electrode, and wherein insulating barrier has an opening to expose the subregion of first electrode.Active layers is disposed on first electrode, and extends on the insulating barrier from first electrode that opening exposed.Second electrode is disposed on insulating barrier and the active layers, and wherein active layers is positioned at the coverage of second electrode at least.
The present invention proposes a kind of double scanning diode array substrate in addition, and it comprises a substrate, multi-strip scanning line, a plurality of pixel cell and a plurality of pixel cell.Scan line is disposed on the substrate.Pixel cell is disposed on the substrate, and wherein each pixel cell comprises two thin film diodes and a pixel electrode, and pixel electrode is respectively by described two thin film diodes and different scan line electrical connections.Each thin film diode comprises one first electrode, an insulating barrier, an active layers and one second electrode.First electrode is disposed on the substrate.Insulating barrier is disposed on the substrate to cover first electrode, and wherein insulating barrier has an opening to expose the subregion of first electrode.Active layers is disposed on first electrode, and extends on the insulating barrier from first electrode that opening exposed.Second electrode is disposed on insulating barrier and the active layers, and wherein active layers is positioned at the coverage of second electrode at least, and second electrode is electrically connected with pixel electrode.
In one embodiment of this invention, the edge of first electrode is not exposed by described opening.
In one embodiment of this invention, opening is positioned at the coverage of described active layers at least.
In one embodiment of this invention, the edge of active layers does not exceed the edge of described first electrode.
In one embodiment of this invention, the material of insulating barrier comprises silicon nitride, silica or silicon oxynitride.
In one embodiment of this invention, the thickness of insulating barrier is about
Extremely
In one embodiment of this invention, the material of active layers comprises silicon nitride (the Si richSiO that is rich in silicon
x), be rich in the silica of silicon or the graphite of class diamond (Diamond-Like Carbon, DLC).
In one embodiment of this invention, first electrode is Al, Mo, Ti, Cu, Wo or Ti/Al/Ti.
In one embodiment of this invention, second electrode is Al, Mo, Ti, Cu, Wo or Ti/Al/Ti.
In one embodiment of this invention, the material of pixel electrode comprises indium tin oxide or indium-zinc oxide.
The present invention more proposes a kind of display panels, and it comprises a double scanning diode array substrate, a subtend substrate and a liquid crystal layer.Double scanning diode array substrate comprises a substrate, multi-strip scanning line, a plurality of pixel cell and a plurality of pixel cell.Scan line is disposed on the substrate.Pixel cell is disposed on the substrate, and wherein each pixel cell comprises two thin film diodes and a pixel electrode, and pixel electrode is respectively by described two thin film diodes and different scan line electrical connections.Each thin film diode comprises one first electrode, an insulating barrier, an active layers and one second electrode.First electrode is disposed on the substrate.Insulating barrier is disposed on the substrate to cover first electrode, and wherein insulating barrier has an opening to expose the subregion of first electrode.Active layers is disposed on first electrode, and extends on the insulating barrier from first electrode that opening exposed.Second electrode is disposed on insulating barrier and the active layers, and wherein active layers is positioned at the coverage of second electrode at least, and second electrode is electrically connected with pixel electrode.Liquid crystal layer is between double scanning diode array substrate and subtend substrate.
In one embodiment of this invention, the subtend substrate comprises that many counter electrodes are vertical with scan line.
In sum, the insulating barrier that is disposed between first electrode and second electrode contacts with each other and causes the electrical short except avoiding first electrode and second electrode, and current generated punch-through effect (breakdown) can be reduced in thin film diode and be applied in big voltage the time, and cause the damage of rete.In addition, in part embodiment of the present invention, active layers is disposed in the opening of insulating barrier, and adopts the metal material of non-printing opacity to make first electrode and second electrode, so can avoid irradiate light to produce photoelectric current, and then promote the electrical characteristic of thin film diode to active layers.
Description of drawings
Figure 1A is a kind of partial top view of known double scanning diode substrate.
Figure 1B is the generalized section of the thin film diode substrate that illustrated along the hatching line AA ' of Figure 1A.
Fig. 2 A is the vertical view of the thin film diode of one embodiment of the invention.
Fig. 2 B is the generalized section of the thin film diode that illustrated along the hatching line BB ' of Fig. 2 A.
Fig. 3 A is the circuit diagram of the double scanning diode array substrate of one embodiment of the invention.
Fig. 3 B illustrates the rete vertical view into the regional P1 of Fig. 3 A.
The generalized section that Fig. 3 C is then illustrated for the hatching line CC ' along Fig. 3 B.
Fig. 3 D is the circuit diagram of the double scanning diode array substrate of another kind of example.
Fig. 4 is the schematic diagram of the display panels of one embodiment of the invention.
Drawing reference numeral
100,300,300 ', 410: double scanning diode array substrate
110,201,310: substrate
120,320: scan line
130,330: pixel cell
132,200,332: thin film diode
134,334: pixel electrode
132a, 210: the first electrodes
132b: nonlinear resistance material layer
132c, 240: the second electrodes
136: fringe region
220: insulating barrier
220a: opening
230: active layers
400: display panels
420: the subtend substrate
422: counter electrode
430: liquid crystal layer
440: color filter film
AA ', BB ', CC ': hatching line
A1, A2: cross section
P1: zone
Embodiment
For above-mentioned feature and advantage of the present invention can be become apparent, a plurality of embodiment cited below particularly, and cooperate appended accompanying drawing, be described in detail below.
First embodiment
Fig. 2 A is the vertical view of the thin film diode of one embodiment of the invention, and Fig. 2 B is the generalized section of the thin film diode that illustrated along the hatching line BB ' of Fig. 2 A.Please also refer to Fig. 2 A and Fig. 2 B, the thin film diode 200 of present embodiment is suitable for being disposed on the substrate 201, and wherein thin film diode 200 comprises one first electrode 210, an insulating barrier 220, an active layers 230 and one second electrode 240.First electrode 210 is disposed on the substrate 201.In the present embodiment, the material of substrate 201 can be to select inorganic transparent material (as: glass, quartz or other suitable materials) or organic transparent material (as: polyalkenes, polyamides class, polyalcohols, polyesters, rubber, thermoplastic polymer, thermosetting polymer, poly aromatic hydro carbons, poly-methyl propionyl acid methyl esters class, polycarbonate-based or material that other are suitable) for use.The substrate 201 of present embodiment be glass with the inorganic transparent material as substrate, but be not limited thereto.
In addition, the material of first electrode 210 can be to use the electric conducting material of single or multiple lift structure.For instance, the material of first electrode 210 for example is to select metals such as silver, copper (Cu), tin, lead, hafnium, tungsten (Wo), molybdenum, neodymium, titanium (Ti), tantalum, aluminium (Al), zinc for use, or other suitable materials.Certainly, first electrode 210 can also be the alloy of above-mentioned material or the sandwich construction that above-mentioned material constituted.Present embodiment, but is not limited thereto as first electrode 210 with titanium/aluminium/titanium multiple layer metal.
Insulating barrier 220 is disposed on the substrate 201 to cover first electrode 210, and wherein insulating barrier 220 has an opening 220a to expose the subregion of first electrode 210, shown in Fig. 2 A and Fig. 2 B.In the present embodiment, the edge 210a of first electrode 210 is not exposed by opening 220a, and in other words, the area of opening 220a must be insulated the area that layer 220 covers less than first electrode 210, shown in Fig. 2 B.In addition, the material of insulating barrier 220 for example is silicon nitride, silica, silicon oxynitride, carborundum, hafnium oxide, aluminium oxide or other appropriate insulation materials.
Generally speaking, if light is when exposing to the formed active layers 230 of above-mentioned material, and active layers 230 is easy to generate corresponding photoelectric current, and causes the problem as known described leakage current, thus the electrical characteristic when influencing thin film diode 200 and carrying out switch.For solving the above problems, the thin film diode 200 of present embodiment is by above-mentioned described film layer structure (shown in Fig. 2 B), make the active layers 230 between first electrode 210 and second electrode 240 be not vulnerable to the light of external environment and/or be positioned at the backlight module (not illustrating) below the substrate 201 light influence and produce photoelectric current (photo-current), and then can promote the electrical characteristic of thin film diode 200.
In addition, in the process that drives thin film diode 200, excessive for fear of the voltage difference that puts between first electrode 210 and second electrode 240, and produce as known described electric current punch-through effect, and then cause the damage of rete, therefore, the insulating barrier 220 between first electrode 210 and second electrode 240 is to adopt above-mentioned insulating properties material, and the thickness of insulating barrier 220 is about in fact
Extremely
Thus, can improve the electric current punch-through effect that when driving thin film diode 200, is produced effectively, and then promote the electrical characteristic of thin film diode 200 more.
What deserves to be mentioned is that because insulating barrier 220 is between first electrode 210 and second electrode 240, and it covers length on first electrode 210 or the width edge 210a above first electrode 210, the length that wherein surpasses for example is greater than more than the 10 μ m.Thus, can avoid first electrode 210 and second electrode 240 to be in contact with one another effectively and make thin film diode 200 cause short circuit when being driven.
As mentioned above, insulating barrier 220 is disposed between first electrode 210 and second electrode 240, and suitably adjust the thickness and the rete position of insulating barrier 220, except avoiding first electrode 210 and second electrode 240 to contact with each other and cause the electrical short, more can avoid when thin film diode 200 is applied in big voltage, producing the electric current punch-through effect, and cause the damage of rete.In addition, thin film diode 200 is disposed at active layers 230 in the opening 220a of insulating barrier 220, and first electrode 210 and second electrode 240 are to use the metal material of non-printing opacity, thus, except the electrical characteristics that can promote thin film diode 200, more can avoid irradiate light to produce optogalvanic effect to active layers 230, and then influence the electrical characteristic of thin film diode.
Second embodiment
Fig. 3 A is the circuit diagram of the double scanning diode array substrate of one embodiment of the invention, and Fig. 3 B illustrates the rete vertical view into the regional P1 of Fig. 3 A, the generalized section that Fig. 3 C is then illustrated for the hatching line CC ' along Fig. 3 B.Please also refer to Fig. 3 A, Fig. 3 B and Fig. 3 C, the double scanning diode array substrate 300 of present embodiment comprises a substrate 310, multi-strip scanning line 320 and a plurality of pixel cell 330.Scan line 320 is disposed on the substrate 310.Pixel cell 330 is disposed on the substrate 310, and wherein each pixel cell 330 comprises two thin film diodes 332 and a pixel electrode 334.Pixel electrode 334 is respectively by described two thin film diodes 332 and different scan line 320 electrical connections.Each thin film diode 332 for example is the rete design of adopting above-mentioned thin film diode 200, and identical components indicates same-sign, it should be noted that second electrode 240 of thin film diode 200 (thin film diode 332) is electrically connected with pixel electrode 334.
In the present embodiment, each scan line 320 is electrically connected to each pixel electrode 334 by one of them thin film diode 332 respectively, and each pixel electrode 334 is electrically respectively by two thin film diodes 332 and different scan line 320 electrical connections, as shown in Figure 3A.Thus, when two scan lines 320 of the same row pixel cell 330 of control are opening simultaneously, in just being in, the pixel electrode 334 in this row pixel cell 330 can be written into the state of view data.
In Fig. 3 A, dispose two scan lines 320 between the pixel cell 330 of different lines, and two scan lines 320 are electrically connected with the pixel cell 330 of different lines respectively.Yet the present invention does not limit the arrangement mode of scan line 320.For example, the arrangement mode of scan line can also illustrate as Fig. 3 D, in detail, can only dispose a scan line 320 ' between the pixel cell 330 of different lines, and this scan line 320 ' can be electrically connected with the pixel cell 330 of different lines simultaneously.
In the present embodiment, because thin film diode 332 is rete designs of adopting above-mentioned thin film diode 200, and second electrode 240 is electrically connected with pixel electrode 334, illustrate as Fig. 3 B and Fig. 3 C, therefore, double scanning diode array substrate 300,300 ' similarly can have the described advantage of preceding embodiment, and related description please refer to the foregoing description, so no longer repeat at this.
In addition, Fig. 4 is the schematic diagram of the display panels of one embodiment of the invention.Please refer to Fig. 4, the display panels 400 of present embodiment comprises a double scanning diode array substrate 410, a subtend substrate 420 and a liquid crystal layer 430.Double scanning diode array substrate 410 for example is to adopt above-mentioned double scanning diode array substrate 300,300 ', and related description please refer to the foregoing description.Liquid crystal layer 430 is between double scanning diode array substrate 410 and subtend substrate 420.
In the present embodiment, subtend substrate 420 comprises many counter electrodes 422, and wherein counter electrode 422 is vertical with scan line 320 or 320 ', illustrates as Fig. 4.Specifically, counter electrode 422 mainly is in order to transmit the voltage signal that picture shows.For example, when the scan line 320 of same row pixel cell 330 both sides or scan line 320 ' are in opening, the thin film diode 332 that is electrically connected with it also can be unlocked simultaneously, and then make the pixel electrode 334 in the described row pixel cell 330 be in the state that can be written into view data, in other words, the data voltage of part counter electrode 422 just can be coupled to corresponding pixel electrode 334.
In the present embodiment, display panels 400 more comprises a color filter film 440.Color filter film 440 can be to be disposed on the double scanning diode array substrate 410, or is disposed on the subtend substrate 420.Wherein, color filter film 440 the mode on the double scanning diode array substrate 410 of being disposed at for example is to adopt so-called colored filter in the design of (array on color filter) on colored filter of (color filter on array) or active layers on the active layers, and the configuration mode of many counter electrodes 422 can be to form above-mentioned many counter electrodes 422 at general colored filter, and then forms above-mentioned subtend substrate 420.In the present embodiment, Fig. 4 is to serve as to implement example with subtend substrate 420 for the colored filter with many counter electrodes 422, but is not limited thereto.
In addition, the material of liquid crystal layer 430 can be nematic crystal (Nematic Liquid Crystal), cholesterol liquid crystal (Cholesteric Liquid Crystal), smectic liquid crystal (Smectic Liquid Crystal), disc-like liquid crystal (Discotic LC) and bowl-shape liquid crystal (Bowlic LC) or the like according to the arrangement mode of kind or liquid crystal molecule.In addition, the mode of injecting between double scanning diode array substrate 410 and the subtend substrate 420 according to liquid crystal layer 430 can be to adopt drip formula injection method or vacuum impregnation or the like.Certainly, the injection mode of which kind of form of above-mentioned employing is looked closely user's design requirement with the liquid crystal molecule that adopts which kind of material and decided, and is above-mentioned only for illustrating, non-in order to limit the present invention.
In the present embodiment, because double scanning diode array substrate 410 adopts above-mentioned double scanning diode array substrate 300,300 ' design concept, therefore, the display panels of present embodiment similarly has double scanning diode array substrate 300,300 ' described advantage, and associated description can be with reference to described explanation.
In sum, thin film diode of the present invention, double scanning diode array substrate and display panels have following advantage at least.At first, thin film diode is disposed at insulating barrier between first electrode and second electrode, and suitably adjust the thickness and the rete position of insulating barrier, thus, can avoid first electrode and second electrode to contact with each other and cause outside the electrical short, current generated punch-through effect in the time of more can being reduced in thin film diode effectively and being applied in big voltage, and cause the damage of rete.In addition, thin film diode is disposed at active layers in the opening of insulating barrier, and make first electrode and second electrode adopt the metal material of non-printing opacity, thus, can promote outside the electrical characteristics of thin film diode, more can avoid irradiate light to produce optogalvanic effect and then influence the electrical characteristic of thin film diode to active layers.In other words, adopt the double scanning diode array substrate and the display panels of above-mentioned thin film diode similarly to have above-mentioned advantage.
Though the present invention discloses as above with a plurality of embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is when being as the criterion with claim institute confining spectrum.
Claims (20)
1. a thin film diode is characterized in that, described thin film diode is suitable for being disposed on the substrate, and described thin film diode comprises:
One first electrode is disposed on the described substrate;
One insulating barrier is disposed on the described substrate to cover described first electrode, and wherein said insulating barrier has an opening to expose the subregion of described first electrode;
One active layers is disposed on described first electrode that is exposed by described opening; And
One second electrode is disposed on described insulating barrier and the described active layers, and wherein said active layers is positioned at the coverage of described second electrode at least;
The material of described active layers comprises the graphite of the silicon nitride that is rich in silicon, the silica that is rich in silicon or class diamond.
2. thin film diode as claimed in claim 1 is characterized in that the edge of described first electrode is not exposed by described opening.
3. thin film diode as claimed in claim 1 is characterized in that described opening is positioned at the coverage of described active layers at least.
4. thin film diode as claimed in claim 1 is characterized in that the edge of described active layers does not exceed the edge of described first electrode.
5. thin film diode as claimed in claim 1 is characterized in that the material of described insulating barrier comprises silicon nitride, silica or silicon oxynitride.
6. thin film diode as claimed in claim 1 is characterized in that the thickness of described insulating barrier is
Extremely
7. thin film diode as claimed in claim 1 is characterized in that, described first electrode is Al, Mo, Ti, Cu, Wo or Ti/Al/Ti.
8. thin film diode as claimed in claim 1 is characterized in that, described second electrode is Al, Mo, Ti, Cu, Wo or Ti/Al/Ti.
9. a double scanning diode array substrate is characterized in that, described double scanning diode array substrate comprises:
One substrate;
The multi-strip scanning line is disposed on the described substrate; And
A plurality of pixel cells, be disposed on the described substrate, wherein each described pixel cell comprises two thin film diodes and a pixel electrode, and described pixel electrode is respectively by described two thin film diodes and the electrical connection of different scan line, and each described thin film diode comprises:
One first electrode is disposed on the described substrate;
One insulating barrier is disposed on the described substrate to cover described first electrode, and wherein said insulating barrier has an opening to expose the subregion of described first electrode;
One active layers is disposed on described first electrode that is exposed by described opening; And
One second electrode is disposed on described insulating barrier and the described active layers, and wherein said active layers is positioned at the coverage of described second electrode at least, and described second electrode is electrically connected with described pixel electrode.
10. double scanning diode array substrate as claimed in claim 9 is characterized in that the edge of described first electrode is not exposed by described opening.
11. double scanning diode array substrate as claimed in claim 9 is characterized in that, described opening is positioned at the coverage of described active layers at least.
12. double scanning diode array substrate as claimed in claim 9 is characterized in that, the edge of described active layers does not exceed the edge of described first electrode.
13. double scanning diode array substrate as claimed in claim 9 is characterized in that, the material of described insulating barrier comprises silicon nitride, silica or silicon oxynitride.
14. double scanning diode array substrate as claimed in claim 9 is characterized in that, the thickness of described insulating barrier is
Extremely
15. double scanning diode array substrate as claimed in claim 9 is characterized in that, the material of described active layers comprises the graphite of the silicon nitride that is rich in silicon, the silica that is rich in silicon or class diamond.
16. double scanning diode array substrate as claimed in claim 9 is characterized in that, the material of described pixel electrode comprises indium tin oxide or indium-zinc oxide.
17. double scanning diode array substrate as claimed in claim 9 is characterized in that, described first electrode is Al, Mo, Ti, Cu, Wo or Ti/Al/Ti.
18. double scanning diode array substrate as claimed in claim 10 is characterized in that, described second electrode is Al, Mo, Ti, Cu, Wo or Ti/Al/Ti.
19. a display panels comprises:
One double scanning diode array substrate comprises:
One substrate;
The multi-strip scanning line is disposed on the described substrate; And
A plurality of pixel cells, be disposed on the described substrate, wherein each described pixel cell comprises two thin film diodes and a pixel electrode, and described pixel electrode is respectively by described two thin film diodes and the electrical connection of different scan line, and each described thin film diode comprises:
One first electrode is disposed on the described substrate;
One insulating barrier is disposed on the described substrate to cover described first electrode, and wherein said insulating barrier has an opening to expose the subregion of described first electrode;
One active layers is disposed on described first electrode that is exposed by described opening; And
One second electrode is disposed on described insulating barrier and the described active layers, and wherein said active layers is positioned at the coverage of described second electrode at least, and described second electrode is electrically connected with described pixel electrode;
One subtend substrate; And
One liquid crystal layer is between described double scanning diode array substrate and described subtend substrate.
20. display panels as claimed in claim 19 is characterized in that, described subtend substrate comprises that many counter electrodes are vertical with described these scan lines.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810166775A CN100585879C (en) | 2008-10-27 | 2008-10-27 | Thin film diode, double scanning diode array substrate and liquid crystal display panel |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200810166775A CN100585879C (en) | 2008-10-27 | 2008-10-27 | Thin film diode, double scanning diode array substrate and liquid crystal display panel |
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| Publication Number | Publication Date |
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| CN101383380A CN101383380A (en) | 2009-03-11 |
| CN100585879C true CN100585879C (en) | 2010-01-27 |
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| TWI621049B (en) * | 2017-06-08 | 2018-04-11 | 友達光電股份有限公司 | Touch panel |
| TWI622917B (en) * | 2017-09-29 | 2018-05-01 | 友達光電股份有限公司 | Touch device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1138751A (en) * | 1995-03-22 | 1996-12-25 | 摩托罗拉公司 | Two dimesional organic light emitting diode array for high density information image manifestation apparatus |
| CN1932628A (en) * | 2005-09-14 | 2007-03-21 | 广辉电子股份有限公司 | Thin Film Diode LCD Panel |
-
2008
- 2008-10-27 CN CN200810166775A patent/CN100585879C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1138751A (en) * | 1995-03-22 | 1996-12-25 | 摩托罗拉公司 | Two dimesional organic light emitting diode array for high density information image manifestation apparatus |
| CN1932628A (en) * | 2005-09-14 | 2007-03-21 | 广辉电子股份有限公司 | Thin Film Diode LCD Panel |
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