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CN100576356C - Method for reducing memory unit write disturbance - Google Patents

Method for reducing memory unit write disturbance Download PDF

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Publication number
CN100576356C
CN100576356C CN200610147708A CN200610147708A CN100576356C CN 100576356 C CN100576356 C CN 100576356C CN 200610147708 A CN200610147708 A CN 200610147708A CN 200610147708 A CN200610147708 A CN 200610147708A CN 100576356 C CN100576356 C CN 100576356C
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Prior art keywords
storage unit
write
voltage
memory cell
disorder
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CN200610147708A
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CN101206920A (en
Inventor
缪威权
陈良成
钟灿
刘鉴常
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Semiconductor Manufacturing International Beijing Corp
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Semiconductor Manufacturing International Shanghai Corp
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Priority to CN200610147708A priority Critical patent/CN100576356C/en
Priority to US11/874,902 priority patent/US7668009B2/en
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50Marginal testing, e.g. race, voltage or current testing
    • G11C29/50004Marginal testing, e.g. race, voltage or current testing of threshold voltage
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

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  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

The invention discloses a kind of method that reduces storage unit write-in disorder, may further comprise the steps: searching can guarantee the initial Writing condition that storage unit normally writes; Select the variable that a parameter in the initial Writing condition is tested as write-in disorder; At least at two variate-values of this variable, storage unit is carried out the write-in disorder test; According to the write-in disorder test result, obtain making the minimum of storage unit write-in disorder minimum to upset Writing condition; Writing condition when the minimum upset Writing condition that application obtains carries out write operation as storage unit.Write-in disorder minimum when the method that reduces storage unit write-in disorder by the present invention makes the storage unit write operation, and easy to operate.

Description

Reduce the method for storage unit write-in disorder
Technical field
The present invention relates to semiconductor memory cell, particularly reduce the method for storage unit write-in disorder.
Background technology
Non-volatile (non-volatile) semiconductor memory is made of the memory cell array that comprises word line and bit line, and field effect transistor is the basic composition unit of storage unit usually.Word line connects transistorized grid, and bit line connects transistor drain.By opening a certain word line and bit line, just can carry out write operation for selected storage unit (selected cell).Find that in actual applications when carrying out write operation for a certain selected storage unit, the storage unit that is subjected to same word line control that it is adjacent may also can produce write operation.This phenomenon is called as " write-in disorder ".
U.S. Patent number a kind of method that reduces storage unit write-in disorder that has been 6469933 disclosure of the Invention.Consecutive storage unit for common word line, when memory cell array begins to carry out write operation, add ground voltage by the bit line on the storage unit of carrying out write operation for needs, and the bit line that carries out for adjacent not needing on the storage unit of write operation adds high voltage, thereby forms paratope line to reduce the influence of write-in disorder.The essence of this method is to control this angle from the process of storage unit being carried out write operation to reduce write-in disorder, therefore not only to control the bit-line voltage on the storage unit that to carry out write operation, also to additionally control adjacent not needing and carry out bit-line voltage on the storage unit of write operation, so inconvenient operation.
Summary of the invention
The problem that the present invention solves is to solve reduce in the prior art that the storage unit write-in disorder action need controls local more, the problem of inconvenient operation.
For addressing the above problem, the invention provides a kind of method that reduces storage unit write-in disorder, may further comprise the steps:
(1) searching can guarantee the initial Writing condition that storage unit normally writes;
(2) select the variable that a parameter in the initial Writing condition is tested as write-in disorder;
(3) at least at two variate-values of this variable, storage unit is carried out the write-in disorder test;
(4), obtain making the minimum of storage unit write-in disorder minimum to upset Writing condition according to the write-in disorder test result;
Writing condition when (5) using the minimum obtain and upset Writing condition and carry out write operation as storage unit.
Described searching can guarantee that the step of the initial Writing condition that storage unit normally writes comprises,
(11) measure transistorized threshold voltage initial value in the storage unit;
(12) keep transistorized source electrode and base earth in the storage unit, transistorized grid in the storage unit is applied the voltage that magnitude of voltage is 10V, set drain voltage storage unit is carried out write operation;
(13) measure transistorized threshold voltage in the storage unit once more;
(14) judge that whether transistorized threshold voltage difference is greater than the nominal value corresponding to transistor specifications in the storage unit in the storage unit;
(15) as the threshold voltage difference less than nominal value, then the drain voltage value of She Dinging can not make storage unit normally write, and storage unit is carried out erase operation, makes that transistorized threshold voltage drops to initial value in the storage unit, returns step (12);
(16) reach nominal value as the threshold voltage difference, then the drain voltage value of She Dinging can make storage unit normally write, and storage unit is carried out erase operation, makes that transistorized threshold voltage drops to initial value in the storage unit;
(17) record makes at least 2 of the drain voltages that storage unit can normally write and the voltage of source electrode, base stage and grid, as initial Writing condition.
Compared with prior art, the present invention has the following advantages: test the write operation that obtains making the minimum upset Writing condition of storage unit write-in disorder minimum and be applied to storage unit by write-in disorder, thereby guaranteeing on the basis that storage unit can normally write, make the write-in disorder minimum, and it is when storage unit is carried out write operation, needn't additionally control again, thereby easy to operate.
Description of drawings
Fig. 1 is that method that the present invention reduces storage unit write-in disorder is sought and can be guaranteed the histogram as a result that storage unit normally writes;
Fig. 2 is the histogram as a result that the present invention reduces the relation of the method test source pole tension of storage unit write-in disorder and write-in disorder;
Fig. 3 is the line graph as a result that the present invention reduces the relation of the method test base voltage of storage unit write-in disorder and write-in disorder;
Fig. 4 is the method flow diagram that the present invention reduces storage unit write-in disorder;
Fig. 5 seeks the method flow diagram that can guarantee the initial Writing condition that storage unit normally writes;
Fig. 6 is the write-in disorder test flow chart.
Embodiment
The method that the present invention reduces storage unit write-in disorder obtains making the minimum of storage unit write-in disorder minimum to upset Writing condition by the write-in disorder test and is applied in the write operation of storage unit, thus the write-in disorder minimum when making storage unit carry out write operation.The method that the present invention reduces storage unit write-in disorder may further comprise the steps:
Step s1, searching can guarantee the initial Writing condition that storage unit normally writes;
Step s2 selects the variable that a parameter in the initial Writing condition is tested as write-in disorder;
Step s3 at two variate-values of this variable, carries out the write-in disorder test to storage unit at least;
Step s4 according to the write-in disorder test result, obtains making the minimum of storage unit write-in disorder minimum to upset Writing condition;
Step s5, the Writing condition when the minimum upset Writing condition that application obtains carries out write operation as storage unit.
Described searching can guarantee that the step of the initial Writing condition that storage unit normally writes comprises,
Step s11 measures transistorized threshold voltage initial value in the storage unit;
Step s12 keeps transistorized source electrode and base earth in the storage unit, and transistorized grid in the storage unit is applied the voltage that magnitude of voltage is 10V, sets drain voltage storage unit is carried out write operation;
Step s13 measures transistorized threshold voltage in the storage unit once more;
Step s14 judges that whether transistorized threshold voltage difference is greater than the nominal value corresponding to transistor specifications in the storage unit in the storage unit;
Step s15, less than nominal value, then the drain voltage value of She Dinging can not make storage unit normally write, and storage unit is carried out erase operation as the threshold voltage difference, makes that transistorized threshold voltage drops to initial value in the storage unit, returns step s12;
Step s16 reaches nominal value as the threshold voltage difference, and then the drain voltage value of She Dinging can make storage unit normally write, and storage unit is carried out erase operation, makes that transistorized threshold voltage drops to initial value in the storage unit;
Step s17, record make at least 2 of the drain voltages that storage unit can normally write and the voltage of source electrode, base stage and grid, as initial Writing condition.
Described nominal value is 2.5V.
It is described that to make storage unit can normally write fashionable drain voltage be 3.6V, 3.8V, 4.0V, 4.2V and 4.4V.
Described initial Writing condition is transistorized source electrode and a base earth in the storage unit, and grid applies the voltage of 10V, and drain electrode applies the voltage of 3.6V, 3.8V, 4.0V, 4.2V and 4.4V.
Described write-in disorder test may further comprise the steps,
Step s41, a value of getting the variable of being selected keeps the value of other parameters in the initial Writing condition constant, and storage unit is carried out write operation;
Step s42 measures and the record write-in disorder;
Step s43 judges whether the variate-value of not getting in addition;
If the variate-value of not getting in addition then returns step s41;
If the variate-value of not getting, then the write-in disorder test is finished.
The described minimum Writing condition of upsetting is to make the set of respective value of each Writing condition parameter of storage unit write-in disorder minimum respectively.
A described parameter of selecting in the initial Writing condition is to select source voltage or base voltage as variable as variable.
Described source voltage is established disconnection, 1V, 1.5V and four values of 2V; Described base voltage is established-1V, 0V and three values of 1V.
Describe the method that the present invention reduces storage unit write-in disorder in detail below by concrete operating process, as shown in Figure 4:
The first step, searching can guarantee the initial Writing condition that storage unit normally writes, as shown in Figure 5:
At first, measure transistorized threshold voltage initial value in the storage unit;
Then, keep transistorized source electrode and base earth in the storage unit, transistorized grid in the storage unit is applied the voltage that magnitude of voltage is 10V, setting drain voltage is that 3.6V carries out write operation to storage unit;
After write operation is finished, measure the threshold voltage of storage unit once more;
The threshold voltage value of measuring is once more deducted the threshold voltage initial value that records obtain the threshold voltage difference, whether the judgment threshold voltage difference is greater than 2.5V;
As shown in Figure 1, when drain voltage is 3.6V, the corresponding threshold voltage difference has reached 2.5V, illustrate that storage unit can normally write when drain voltage was 3.6V, storage unit is carried out erase operation, make the threshold voltage of storage unit drop to initial value, the purpose of doing like this is to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit, improves the degree of accuracy of measuring;
Next, the source electrode and the base earth that still keep cell transistor in the storage, transistorized grid in the storage unit is applied the voltage that magnitude of voltage is 10V, setting drain voltage more respectively is 3.8V, 4.0V, 4.2V and 4.4V, storage unit is carried out write operation, obtain each threshold voltage difference as shown in Figure 1, as we can see from the figure, when drain voltage was 3.8V, 4.0V, 4.2V and 4.4V, storage unit can both normally write.Write down the voltage of these 5 drain voltage value 3.6V, 3.8V, 4.0V, 4.2V and 4.4V and source electrode, base earth and grid then, be about to transistor source and base earth in the storage unit, grid applies the voltage of 10V, and drain electrode applies the voltage of 3.6V, 3.8V, 4.0V, 4.2V and 4.4V as initial Writing condition.
In second step, select source voltage in the initial Writing condition as variable;
In the 3rd step, the setting source voltage is disconnection, 1V, 1.5V and four values of 2V, and storage unit is carried out the write-in disorder test, as shown in Figure 6:
At first, get source voltage values for disconnecting, keep the value of other parameters in the initial Writing condition constant, be about to base earth, it is the voltage of 10V greater than 2 microseconds, magnitude of voltage that grid is applied pulse width, it is 2 microseconds that drain electrode is applied pulse width, and magnitude of voltage is that the voltage of 3.6V carries out write operation to storage unit, measures and the record write-in disorder; Then, only change drain voltage, keep source voltage values for disconnecting, keep base earth, it is that 2 microseconds, magnitude of voltage are the voltage of 10V that maintenance applies pulse width to grid, and the voltage that drain electrode is applied 3.8V carries out write operation to storage unit respectively, measures also record write-in disorder; The voltage that drain electrode is applied 4.0V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.2V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.4V carries out write operation to storage unit, measures and the record write-in disorder.Wherein, all to carry out erase operation one time before carrying out write operation changing drain voltage each time to storage unit, make the threshold voltage of storage unit drop to initial value, improve the degree of accuracy of measuring to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit.
Then, getting source voltage values is 1V, keep the value of other parameters in the initial Writing condition constant, be about to base earth, it is the voltage of 10V greater than 2 microseconds, magnitude of voltage that grid is applied pulse width, it is 2 microseconds that drain electrode is applied pulse width, and magnitude of voltage is that the voltage of 3.6V carries out write operation to storage unit, measures and the record write-in disorder; Then, only change drain voltage, keep source voltage values for disconnecting, keep base earth, it is that 2 microseconds, magnitude of voltage are the voltage of 10V that maintenance applies pulse width to grid, and the voltage that drain electrode is applied 3.8V carries out write operation to storage unit respectively, measures also record write-in disorder; The voltage that drain electrode is applied 4.0V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.2V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.4V carries out write operation to storage unit, measures and the record write-in disorder.Wherein, all to carry out erase operation one time before carrying out write operation changing drain voltage each time to storage unit, make the threshold voltage of storage unit drop to initial value, improve the degree of accuracy of measuring to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit.
Then, getting source voltage values is 1.5V, keep the value of other parameters in the initial Writing condition constant, be about to base earth, it is the voltage of 10V greater than 2 microseconds, magnitude of voltage that grid is applied pulse width, it is 2 microseconds that drain electrode is applied pulse width, and magnitude of voltage is that the voltage of 3.6V carries out write operation to storage unit, measures and the record write-in disorder; Then, only change drain voltage, keep source voltage values for disconnecting, keep base earth, it is that 2 microseconds, magnitude of voltage are the voltage of 10V that maintenance applies pulse width to grid, and the voltage that drain electrode is applied 3.8V carries out write operation to storage unit respectively, measures also record write-in disorder; The voltage that drain electrode is applied 4.0V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.2V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.4V carries out write operation to storage unit, measures and the record write-in disorder.Wherein, all to carry out erase operation one time before carrying out write operation changing drain voltage each time to storage unit, make the threshold voltage of storage unit drop to initial value, improve the degree of accuracy of measuring to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit.
Next, getting source voltage values is 2V, keep the value of other parameters in the initial Writing condition constant, be about to base earth, it is the voltage of 10V greater than 2 microseconds, magnitude of voltage that grid is applied pulse width, it is 2 microseconds that drain electrode is applied pulse width, and magnitude of voltage is that the voltage of 3.6V carries out write operation to storage unit, measures and the record write-in disorder; Then, only change drain voltage, keep source voltage values for disconnecting, keep base earth, it is that 2 microseconds, magnitude of voltage are the voltage of 10V that maintenance applies pulse width to grid, and the voltage that drain electrode is applied 3.8V carries out write operation to storage unit respectively, measures also record write-in disorder; The voltage that drain electrode is applied 4.0V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.2V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.4V carries out write operation to storage unit, measures and the record write-in disorder.Wherein, all to carry out erase operation one time before carrying out write operation changing drain voltage each time to storage unit, make the threshold voltage of storage unit drop to initial value, improve the degree of accuracy of measuring to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit.
At last, getting source voltage values is 3V, keep the value of other parameters in the initial Writing condition constant, be about to base earth, it is the voltage of 10V greater than 2 microseconds, magnitude of voltage that grid is applied pulse width, it is 2 microseconds that drain electrode is applied pulse width, and magnitude of voltage is that the voltage of 3.6V carries out write operation to storage unit, measures and the record write-in disorder; Then, only change drain voltage, keep source voltage values for disconnecting, keep base earth, it is that 2 microseconds, magnitude of voltage are the voltage of 10V that maintenance applies pulse width to grid, and the voltage that drain electrode is applied 3.8V carries out write operation to storage unit respectively, measures also record write-in disorder; The voltage that drain electrode is applied 4.0V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.2V carries out write operation to storage unit, measures and the record write-in disorder; The voltage that drain electrode is applied 4.4V carries out write operation to storage unit, measures and the record write-in disorder.Wherein, all to carry out erase operation one time before carrying out write operation changing drain voltage each time to storage unit, make the threshold voltage of storage unit drop to initial value, improve the degree of accuracy of measuring to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit.
Fig. 2 is the histogram of drawing by the write-in disorder of record, as can see from Figure 2, write-in disorder increases along with the rising that puts on the pulse voltage on the transistor drain in the storage unit, but reduce gradually along with the rising that puts on the voltage on the transistorized source electrode in the storage unit, the voltage of write-in disorder was lower than 0.5V when voltage was 2V on the transistorized source electrode in storage unit.But transistorized source voltage continues to be elevated in the 3V in storage unit, and it is very high that the write-in disorder of adjacent bit lines becomes on the contrary.Therefore can reach a conclusion, when storage unit is carried out write operation, under the situation of other Writing condition parameter constants, when transistorized source voltage is 2V in the storage unit, the write-in disorder minimum.
Next turned back to for second step, select base voltage in the initial Writing condition as variable;
Setting the base voltage value is-1V, 0V and three values of 1V;
Storage unit is carried out the write-in disorder test once more:
At first, getting the base voltage value is-1V, keep the value of other parameters in the initial Writing condition constant, promptly keep source ground, it is the voltage of 10V greater than 2 microseconds, magnitude of voltage that grid is applied pulse width, it is 2 microseconds that drain electrode is applied pulse width, and magnitude of voltage is that the voltage of 3.6V carries out write operation to storage unit, measures and the record write-in disorder; Then, only change drain voltage, keep the base voltage value to be-1V, keep source ground, it is that 2 microseconds, magnitude of voltage are the voltage of 10V that maintenance applies pulse width to grid, and the voltage that drain electrode is applied 3.8V carries out write operation to storage unit, measures and the record write-in disorder.Wherein, all to carry out erase operation one time before carrying out write operation changing drain voltage each time to storage unit, make the threshold voltage of storage unit drop to initial value, improve the degree of accuracy of measuring to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit.
Then, getting the base voltage value is 0V, keep the value of other parameters in the initial Writing condition constant, promptly keep source ground, it is the voltage of 10V greater than 2 microseconds, magnitude of voltage that grid is applied pulse width, it is 2 microseconds that drain electrode is applied pulse width, and magnitude of voltage is that the voltage of 3.6V carries out write operation to storage unit, measures and the record write-in disorder; Then, only change drain voltage, keeping the base voltage value is 0V, keep source ground, it is that 2 microseconds, magnitude of voltage are the voltage of 10V that maintenance applies pulse width to grid, and the voltage that drain electrode is applied 3.8V carries out write operation to storage unit, measures and the record write-in disorder.Wherein, all to carry out erase operation one time before carrying out write operation changing drain voltage each time to storage unit, make the threshold voltage of storage unit drop to initial value, improve the degree of accuracy of measuring to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit.
At last, getting the base voltage value is 1V, keep the value of other parameters in the initial Writing condition constant, promptly keep source ground, it is the voltage of 10V greater than 2 microseconds, magnitude of voltage that grid is applied pulse width, it is 2 microseconds that drain electrode is applied pulse width, and magnitude of voltage is that the voltage of 3.6V carries out write operation to storage unit, measures and the record write-in disorder; Then, only change drain voltage, keeping the base voltage value is 1V, keep source ground, it is that 2 microseconds, magnitude of voltage are the voltage of 10V that maintenance applies pulse width to grid, and the voltage that drain electrode is applied 3.8V carries out write operation to storage unit, measures and the record write-in disorder.Wherein, all to carry out erase operation one time before carrying out write operation changing drain voltage each time to storage unit, make the threshold voltage of storage unit drop to initial value, improve the degree of accuracy of measuring to guarantee that follow-up write operation is to carry out on the same voltage status of storage unit.
Fig. 3 is the line graph of drawing by the write-in disorder of record, as can see from Figure 3, along with the rising that puts on the pulse voltage on the transistor drain in the storage unit, write-in disorder is also increasing, and along with the rising that puts on the voltage on the transistorized base stage in the storage unit, write-in disorder reduces gradually, and when base voltage was 1V, write-in disorder was lower than 2.4V.Therefore, can reach a conclusion, when transistor carries out write operation in storage unit, under the situation of other Writing condition parameter constants, when transistorized base voltage is 1V in the storage unit, when storage unit is carried out write operation, the write-in disorder minimum.
The 4th step, comprehensive above-mentioned data result, when storage unit is carried out write operation, transistorized source electrode applies the voltage of 2V in storage unit, transistorized base stage applies the voltage of 1V in storage unit, can make the write-in disorder minimum, therefore setting source electrode applies 2V voltage, and base stage applies 1V voltage and is the minimum Writing condition of upsetting.
The 5th step, when storage unit is carried out write operation, to set source voltage and apply 2 voltages, base voltage applies 1V voltage.
In sum, the method that the present invention reduces storage unit write-in disorder obtains making the minimum of storage unit write-in disorder minimum to upset Writing condition by the write-in disorder test, and be applied to the write operation of storage unit, thereby guaranteeing on the basis that storage unit can normally write, make the write-in disorder minimum, and it is when storage unit is carried out write operation, needn't carry out extra control again, thereby easy to operate.

Claims (9)

1.一种减小存储单元写入扰乱的方法,其特征在于,包括下列步骤,1. A method for reducing storage unit write disturbance, characterized in that, comprising the following steps, (1)寻找能保证存储单元正常写入的初始写入条件;(1) Find the initial writing condition that can guarantee the normal writing of the storage unit; (2)挑选初始写入条件中的两个参数作为写入扰乱测试的变量;(2) Select two parameters in the initial write condition as variables for the write disturbance test; (3)至少针对该两个参数的两个组合值,对存储单元进行写入扰乱测试;(3) performing a write disturbance test on the storage unit at least for the two combined values of the two parameters; (4)根据写入扰乱测试结果,得到使存储单元写入扰乱最小的最小扰乱写入条件;(4) According to the write disturb test result, obtain the minimum disturb write condition that makes the storage unit write disturb minimum; (5)应用得到的最小扰乱写入条件作为存储单元进行写入操作时的写入条件;(5) Applying the obtained minimum disturbance writing condition as the writing condition when the storage unit performs the writing operation; 所述寻找能保证存储单元正常写入的初始写入条件的步骤包括,The step of finding an initial writing condition that can ensure normal writing of the storage unit includes, (11)测量存储单元中晶体管的阈值电压初始值;(11) measuring the threshold voltage initial value of the transistor in the memory cell; (12)保持存储单元中晶体管的基极接地,断开源极,对存储单元中晶体管的栅极施加电压值为10V的电压,对漏极施加脉冲宽度为0.5微秒、脉冲个数为1个的脉冲电压,设定脉冲电压值对存储单元进行写入操作;(12) Keep the base of the transistor in the storage unit grounded, disconnect the source, apply a voltage of 10V to the gate of the transistor in the storage unit, apply a pulse width of 0.5 microseconds to the drain, and the number of pulses is 1 The pulse voltage is set, and the pulse voltage value is set to perform a write operation on the memory cell; (13)再次测量存储单元中晶体管的阈值电压;(13) measuring the threshold voltage of the transistor in the memory cell again; (14)判断存储单元中晶体管的阈值电压差值是否大于对应于存储单元中晶体管规格的标称值;(14) judging whether the threshold voltage difference of the transistor in the storage unit is greater than the nominal value corresponding to the specification of the transistor in the storage unit; (15)如阈值电压差值小于标称值,则设定的漏极脉冲电压值不能够使存储单元正常写入,对存储单元进行擦除操作,使存储单元的阈值电压降到初始值,返回步骤(12);(15) If the threshold voltage difference is less than the nominal value, then the set drain pulse voltage value cannot cause the memory cell to be written normally, and the memory cell is erased to reduce the threshold voltage of the memory cell to the initial value, Return to step (12); (16)如阈值电压差值达到标称值,则设定的漏极脉冲电压值能够使存储单元正常写入,对存储单元进行擦除操作,使存储单元的阈值电压降到初始值;(16) If the threshold voltage difference reaches the nominal value, the set drain pulse voltage value can enable the memory cell to be written normally, perform an erasing operation on the memory cell, and reduce the threshold voltage of the memory cell to an initial value; (17)记录使存储单元能够正常写入的漏极脉冲电压至少2个和脉冲个数和宽度以及源极、基极和栅极的电压,作为初始写入条件。(17) Record at least 2 drain pulse voltages, the number and width of the pulses, and the voltages of the source, base, and gate that enable the memory cell to be written normally, as the initial writing conditions. 2.如权利要求1所述的减小存储单元写入扰乱的方法,其特征在于,所述的称值是2.5V。2. The method for reducing write disturbance in a memory cell according to claim 1, wherein said nominal value is 2.5V. 3.如权利要求1所述的减小存储单元写入扰乱的方法,其特征在于,所述的使存储单元能够正常写入时的漏极电压是3.6V、3.8V、4.0V、4.2V和4.4V。3. The method for reducing memory cell write disturbance as claimed in claim 1, wherein the drain voltages when the memory cell can be written normally are 3.6V, 3.8V, 4.0V, 4.2V and 4.4V. 4.如权利要求1所述的减小存储单元写入扰乱的方法,其特征在于,所述的初始写入条件是存储单元中晶体管的源极和基极接地,栅极施加10V的电压,漏极施加3.6V、3.8V、4.0V、4.2V和4.4V的电压。4. The method for reducing memory cell write disturbance as claimed in claim 1, wherein the initial write condition is that the source and base of the transistor in the memory cell are grounded, and a voltage of 10V is applied to the gate, Voltages of 3.6V, 3.8V, 4.0V, 4.2V, and 4.4V are applied to the drain. 5.如权利要求1所述的减小存储单元写入扰乱的方法,其特征在于,所述的写入扰乱测试包括以下步骤,5. The method for reducing storage unit write disturbance as claimed in claim 1, wherein said write disturbance test comprises the following steps, (31)取所述变量的一个值,保持初始写入条件中的其他参数的值不变,对存储单元进行写入操作;(31) Get a value of the variable, keep the values of other parameters in the initial write condition unchanged, and perform a write operation to the storage unit; (32)测量并记录写入扰乱;(32) Measure and record write disturbances; (33)判断是否还有未取的变量值;(33) judging whether there is any untaken variable value; 若还有未取的变量值,则返回步骤(31);If there are variable values not taken, then return to step (31); 若没有未取的变量值,则写入扰乱测试完成。If there are no untaken variable values, the write disturbance test is complete. 6.如权利要求1所述的减小存储单元写入扰乱的方法,其特征在于,所述的最小扰乱写入条件是分别使得存储单元写入扰乱最小的各个写入条件参数的对应值的集合。6. The method for reducing storage unit writing disturbance as claimed in claim 1, wherein the minimum disturbance writing condition is the corresponding value of each writing condition parameter that makes the storage unit writing disturbance minimum respectively gather. 7.如权利要求1所述的减小存储单元写入扰乱的方法,其特征在于,挑选初始写入条件中的参数源极电压或基极电压作为变量。7. The method for reducing write disturbance in a memory cell according to claim 1, wherein the parameter source voltage or base voltage in the initial write condition is selected as a variable. 8.如权利要求7所述的减小存储单元写入扰乱的方法,其特征在于,设定所述的源极电压的值是断开、1V、1.5V和2V四个值。8 . The method for reducing write disturbance in a memory cell according to claim 7 , wherein the source voltage is set to four values: off, 1V, 1.5V and 2V. 9.如权利要求7所述的减小存储单元写入扰乱的方法,其特征在于,设定所述的基极电压的值是-1V、0V和1V三个值。9. The method for reducing write disturbance in a memory cell according to claim 7, wherein the base voltage is set to three values of -1V, 0V and 1V.
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