CN100566488C - Film electro-luminescent color display device and preparation method thereof - Google Patents
Film electro-luminescent color display device and preparation method thereof Download PDFInfo
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- CN100566488C CN100566488C CNB2005100392827A CN200510039282A CN100566488C CN 100566488 C CN100566488 C CN 100566488C CN B2005100392827 A CNB2005100392827 A CN B2005100392827A CN 200510039282 A CN200510039282 A CN 200510039282A CN 100566488 C CN100566488 C CN 100566488C
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- strip grate
- conduction strip
- porous silicon
- layer
- grate
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- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000843 powder Substances 0.000 claims abstract description 64
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 54
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 28
- 238000001259 photo etching Methods 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000005611 electricity Effects 0.000 claims abstract description 5
- 239000011810 insulating material Substances 0.000 claims abstract description 5
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002784 hot electron Substances 0.000 claims description 20
- 239000004484 Briquette Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 11
- 229920005591 polysilicon Polymers 0.000 claims description 11
- 229910003437 indium oxide Inorganic materials 0.000 claims description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 238000002048 anodisation reaction Methods 0.000 claims description 6
- 238000006073 displacement reaction Methods 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910002114 biscuit porcelain Inorganic materials 0.000 abstract 1
- 238000005253 cladding Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- -1 ion compound Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
The present invention discloses a kind of film electro-luminescent color display device, form by pixel cell, pixel cell is formed by three layers, phosphor powder layer is made up of blue powder, green powder and rouge and powder, the conduction strip grate lays respectively at two outsides of phosphor powder layer, two insulated substrates lay respectively at the outside of Y, directions X electricity strip grate, are provided with material layer between conduction strip grate and phosphor powder layer.The invention also discloses its preparation method: the strip grate metal that will conduct electricity evapotranspires on insulating material, utilize photoetching process to make the metal addressing electrode, cladding material on the conduction strip grate, blue phosphor evapotranspires on porous silicon layer, photoetching forms blue fluorescent material bar shaped grid, green fluorescence powder again evapotranspires, photoetching forms green fluorescence powder strip grate, the red fluorescent material that evapotranspires then, photoetching forms red fluorescent material bar shaped grid, red, green, cover layer of material on the blue three fluorescence bisque, the optical clear insulated substrate is covered on the porous silicon layer, sealing.The present invention has the low-voltage addressing, low capacitance structure, low-power consumption advantage.
Description
Technical field
The present invention relates to a kind of display device and preparation method thereof, relate in particular to a kind of thin film field and cause colorful light-emitting demonstration (TFEL) device and preparation method thereof.
Background technology
The advantage of traditional EL and TFEL display is the total solids device, does not resemble PDP and the FED device needs vacuum.The structure of traditional thin-film electroluminescent demonstration (TFEL) as shown in Figure 1, it is that a kind of accurate symmetrical structure accompanies the thin fluorescent material 3 of one deck between two insulating barriers 2 and 4, drive when showing when being applied to the higher electric pulse of ratio between directions X metal electrode 1 and the Y direction indium oxide electrode 5, the electric field major part concentrates on phosphor powder layer 3 and phosphor powder layer punctured and becomes conduction, the voltage that apply this moment produces very strong electric field and comes abundant accelerated electron in phosphor powder layer, electronics is transferred to ion in the phosphor powder layer with energy, when electronics and ion compound tense just luminous, the drive characteristic of typical ZnS:Mn TFEL as shown in Figure 2, pulse among Fig. 2 is positive and negative, driving voltage at the dielectric layer on the both sides of phosphor powder layer needs to reduce, and traditional medium that is used in phosphor powder layer two sides among the TFELD for example is Ta
2O
5And BaTiO
3, these materials have high dielectric constant, common dielectric constant greater than fluorescent material.On the interface between dielectric layer and the phosphor powder layer, there is not electronics to inject, but because the electric field strength in the phosphor powder layer is very high, the big electric capacity that electronics in the phosphor powder layer is transmitted and dielectric layer is formed charges, because the number of electrons in phosphor powder layer is limited, the luminous efficiency of this process is lower.Reason is in order to prevent fluorescent material self-absorption electronics, fluorescent material among the TFELD must have higher band gap (Eg＞3.5eV), as mentioned above, the shortcoming of TFELD is no matter adopt what dielectric layer now, it requires than higher driving voltage as shown in Figure 2. and high driving voltage requires the IC device of expensive driving usefulness. and second shortcoming of traditional TFEL is that its high-k ε material causes very big electric capacity between metal and indium oxide electrode, because the charging of capacitor and the power loss of discharge are proportional to fCV
2, f drives the frequency that shows, and C is an electric capacity, and V is a voltage.Because C is very big, when driving display panel, power consumption is also very big.
Summary of the invention
The invention provides a kind of film electro-luminescent color display device and preparation method thereof with low electric capacity and low driving voltage demonstration.
The present invention adopts following technical scheme:
A kind of film electro-luminescent color display device, form by pixel cell, this pixel cell is by optically transparent first insulated substrate 6, directions X conduction strip grate 1, Y direction conduction strip grate 5, phosphor powder layer and the second insulated substrate 7 are formed, phosphor powder layer is by blue powder 2, green powder 3 and rouge and powder 4 are formed, directions X conduction strip grate 1, Y direction conduction strip grate 5 lays respectively at two outsides of phosphor powder layer, optically transparent first insulated substrate 6 is positioned at the outside of Y direction conduction strip grate 5, the second insulated substrate 7 is positioned at the outside of directions X conduction strip grate 1, it is characterized in that between Y direction conduction strip grate 5 and phosphor powder layer, being provided with and have second porous silicon layer 9 of being longer than hot electron drift length in the silico briquette, between directions X conduction strip grate 1 and phosphor powder layer, be provided with another and have first porous silicon layer 8 of being longer than hot electron drift length in the silico briquette.
Above-mentioned film electro-luminescent color display device preparation method is:
The first step: directions X is conducted electricity the strip grate metal evapotranspire in heatproof more than 900 ℃ on the second insulated substrate 7, utilize photoetching process to make directions X conduction strip grate, as the metal addressing electrode,
Second step: on directions X conduction strip grate 1, cover one deck and have first porous silicon layer 8 of being longer than hot electron drift length in the silico briquette;
The 3rd step: blue phosphor evapotranspires on first porous silicon layer 8, carry out photoetching with mask and form blue phosphor strip grate 2, green fluorescence powder again evapotranspires, blue powder width of mask displacement is carried out photoetching form green fluorescence powder strip grate 3, the red fluorescent material that evapotranspires then carries out photoetching with green powder width of mask displacement again and forms red fluorescent material bar shaped grid 4, red, green, blue three-color phosphor strip grate forms phosphor powder layer
The 4th step: on phosphor powder layer, cover one deck and have second porous silicon layer 9 of being longer than hot electron drift length in the silico briquette,
The 5th step: will be provided with optically transparent first insulated substrate 6 of bar shaped indium oxide nesa coating and cover on second porous silicon layer 9 as Y direction conduction strip grate 5, guarantee that the directions X conduction strip grate 1 as the metal addressing electrode is vertical mutually on Y direction conduction strip grate 5 and the second insulated substrate 7 on optically transparent first insulated substrate 6, sealed at last and finish electroluminescent display.
Compared with prior art, the present invention has following advantage:
The present invention replaces the medium of phosphor powder layer two sides among traditional TFELD to have the thermionic material layer of long electron drift length, make the hot electron in the new material can be injected in the phosphor powder layer, thereby make the number of electrons in the phosphor powder layer increase, the performance that still keeps the hot electron generation simultaneously in the phosphor powder layer, luminous efficiency thereby increase. the present invention can adopt porous silicon (PPS) as having the thermionic material layer of long electron drift length, it is a kind of typical material, electronics can be accelerated therein effectively, because hot electron is in that to receive drift length in the crystal silicon much longer in than silico briquette.For this reason, porous silicon PPS is used for producing hot electron, and porous silicon becomes the activeleg that can quicken an electronics.When applying voltage between metal electrode and indium oxide electrode, electronics just can be injected in the porous silicon PPS layer, and the field intensity in porous silicon PPS layer is several times as much as 10
5V/cm, at this moment will produce the hot electron that is injected in the phosphor powder layer, in other words the electronics that produces a kind of ballistic is injected in the phosphor powder layer, produce the electronics of 200V, porous silicon PPS layer needs 4-5 μ M thickness, the PPS layer is thin more, and the voltage that applies is low more, and typical panel capacitance is 0.6-1nF/cm
2This is more much smaller than traditional film electro-luminescent color display device TFEL.Porous silicon PPS layer contains several microns polysilicon grains and nano silicon crystal.Phosphor powder layer can be much thinner than traditional TFEL, for example 100-400mm.Can between indium oxide electrode and PPS layer, use an electric charge injection layer if desired.Therefore, the present invention has the low-voltage addressing, low capacitance structure, the advantage of low-power consumption.
Description of drawings
Fig. 1 is traditional TFEL structure sketch.
Fig. 2 is the structural representation of pixel cell of the present invention.
Fig. 3 is the brightness-voltage and the efficient-voltage characteristic of ZnS:Mn TFEL device.
Fig. 4 is the vertical view of pixel cell Y electrode.
Embodiment
Embodiment 1
A kind of film electro-luminescent color display device, form by pixel cell, this pixel cell is by optically transparent first insulated substrate 6, directions X conduction strip grate 1, Y direction conduction strip grate 5, phosphor powder layer and the second insulated substrate 7 are formed, phosphor powder layer is by blue powder 2, green powder 3 and rouge and powder 4 are formed, directions X conduction strip grate 1, Y direction conduction strip grate 5 lays respectively at two outsides of phosphor powder layer, optically transparent first insulated substrate 6 is positioned at the outside of Y direction conduction strip grate 5, the second insulated substrate 7 is positioned at the outside of directions X conduction strip grate 1, it is characterized in that between Y direction conduction strip grate 5 and phosphor powder layer, being provided with and have second porous silicon layer 9 of being longer than hot electron drift length in the silico briquette, between directions X conduction strip grate 1 and phosphor powder layer, be provided with another and have first porous silicon layer 8 of being longer than hot electron drift length in the silico briquette.In the present embodiment, have the material layer 8 of being longer than hot electron drift length in the silico briquette and be porous silicon layer, between the bus of direction X conduction strip grate 1, be provided with insulation strip 11, its thickness is identical with conduction strip grate 1, between the bus of Y direction conduction strip grate 5, be provided with insulation strip 10, above-mentioned porous silicon can be by T.Komoda, SID ' 00Digest, and the method for describing in 4282000 prepares.Above-mentioned optically transparent insulated substrate 6 is a glass, the material selection indium oxide of optically transparent Y direction conduction strip grate 5, and it is 1800A～2200A for a thickness, the insulated substrate in the present embodiment, insulation strip etc. all can adopt Al
2O
3, the thickness of porous silicon layer is 2200A～2700A, and the thickness of phosphor powder layer is 5800A～6200A, and the material of the directions X conduction strip grate 1 on the second insulated substrate 7 is Cr, and thickness is 1800A～2200A.
A kind of method that is used to prepare embodiment 1 described film electro-luminescent color display device:
The first step: directions X is conducted electricity the strip grate metal evapotranspire in heatproof more than 9000 ℃ on the second insulated substrate 7, utilize photoetching process to make directions X conduction strip grate, as the metal addressing electrode, present embodiment is also with the bus sputter insulating material of mask at x direction conduction strip grate, as: the sputtered silicon material, directions X conduction strip grate metal can be selected Metal Cr for use, and insulating material can be used Al
2O
3
Second step: on directions X conduction strip grate, cover one deck and be longer than the material of hot electron drift length in the silico briquette, for example: can adopt sputter polysilicon on directions X conduction strip grate, with the polysilicon anodization, form first porous silicon layer 8, at 9000 ℃～1000 ℃ (as: 900,950 or 1000 ℃) make 8 oxidations of first porous silicon layer with the rapid thermal oxidation method under the temperature, wash again, drying and baking processing, described polysilicon anodization can adopt etching to add 500W tungsten lamp illuminating method, in the present embodiment, with mask sputter insulating material between the bus of directions X conduction strip grate;
The 3rd step: blue phosphor evapotranspires on first porous silicon layer 8, carry out photoetching with mask and form blue fluorescent material bar shaped grid 2, green fluorescence powder again evapotranspires, blue powder width of mask displacement is carried out photoetching form green fluorescence powder strip grate 3, red fluorescent material then evapotranspires, again green powder width of mask displacement is carried out photoetching and form red fluorescent material bar shaped grid 4, red, green, blue three-color phosphor strip grate forms phosphor powder layer;
The 4th step: on phosphor powder layer, cover one deck and be longer than the material of hot electron drift length in the silico briquette, for example: can adopt sputter polysilicon on phosphor powder layer, with the polysilicon anodization, form second porous silicon layer 9, under 9000 ℃～1000 ℃ (as: 900,950 or 1000 ℃) temperature, make 9 oxidations of second porous silicon layer with the rapid thermal oxidation method, wash again, drying and baking processing, described polysilicon anodization can adopt etching to add 500W tungsten lamp illuminating method;
The 5th step: will be provided with optically transparent first insulated substrate 6 of bar shaped indium oxide nesa coating and cover on second porous silicon layer 9 as Y direction conduction strip grate 5, guarantee that the directions X conduction strip grate 1 as the metal addressing electrode is vertical mutually on Y direction electrode and the second insulated substrate 7 on optically transparent first insulated substrate 6, sealed at last and finish electroluminescent display.
Claims (6)
1, a kind of film electro-luminescent color display device, form by pixel cell, this pixel cell is by optically transparent first insulated substrate (6), directions X conduction strip grate (1), Y direction conduction strip grate (5), phosphor powder layer and the second insulated substrate (7) are formed, phosphor powder layer is by blue powder (2), green powder (3) and rouge and powder (4) are formed, directions X conduction strip grate (1), Y direction conduction strip grate (5) lays respectively at two outsides of phosphor powder layer, optically transparent first insulated substrate (6) is positioned at the outside of Y direction conduction strip grate (5), the second insulated substrate (7) is positioned at the outside of directions X conduction strip grate (1), it is characterized in that between Y direction conduction strip grate (5) and phosphor powder layer, being provided with and have second porous silicon layer (9) of being longer than hot electron drift length in the silico briquette, between directions X conduction strip grate (1) and phosphor powder layer, be provided with another and have first porous silicon layer (8) of being longer than hot electron drift length in the silico briquette.
2, film electro-luminescent color display device according to claim 1 is characterized in that being provided with insulation strip (11) between the bus of directions X conduction strip grate (1), is provided with insulation strip (10) between the bus of Y direction conduction strip grate (5).
3, a kind of preparation method who is used to make the described display device of claim 1 is characterized in that:
The first step: directions X is conducted electricity the strip grate metal evapotranspire in heatproof more than 900 ℃ on the second insulated substrate (7), utilize photoetching process to make directions X conduction strip grate, as the metal addressing electrode,
Second step: go up covering one deck at directions X conduction strip grate (1) and have first porous silicon layer (8) of being longer than hot electron drift length in the silico briquette;
The 3rd step: blue phosphor evapotranspires on first porous silicon layer (8), carry out photoetching with mask and form blue phosphor strip grate (2), green fluorescence powder again evapotranspires, blue powder width of mask displacement is carried out photoetching form green fluorescence powder strip grate (3), the red fluorescent material that evapotranspires then carries out photoetching with green powder width of mask displacement again and forms red fluorescent material bar shaped grid (4), red, green, blue three-color phosphor strip grate forms phosphor powder layer
The 4th step: on phosphor powder layer, cover one deck and have second porous silicon layer (9) of being longer than hot electron drift length in the silico briquette,
The 5th step: will be provided with optically transparent first insulated substrate (6) of bar shaped indium oxide nesa coating and cover on second porous silicon layer (9) as Y direction conduction strip grate (5), guarantee that the Y direction conduction strip grate (5) on optically transparent first insulated substrate (6) is vertical mutually with the last directions X conduction strip grate (1) as the metal addressing electrode of the second insulated substrate (7), sealed at last and finish electroluminescent display.
4, preparation method according to claim 3 is characterized in that with mask sputter insulating material between the bus of directions X conduction strip grate.
5, according to claim 3 or 4 described preparation methods, it is characterized in that describedly on directions X conduction strip grate, covering one deck to be longer than first porous silicon layer (8) of hot electron drift length in the silico briquette being sputter polysilicon on directions X conduction strip grate, with the polysilicon anodization, form first porous silicon layer (8), under 900 ℃～1000 ℃ temperature, make first porous silicon layer (8) oxidation, wash again, drying and baking processing with the rapid thermal oxidation method.
6, preparation method according to claim 3, it is characterized in that describedly on phosphor powder layer, covering one deck to be longer than second porous silicon layer (9) of hot electron drift length in the silico briquette being sputter polysilicon on phosphor powder layer, with the polysilicon anodization, form second porous silicon layer (9), under 900 ℃～1000 ℃ temperature, make second porous silicon layer (9) oxidation, wash again, drying and baking processing with the rapid thermal oxidation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100392827A CN100566488C (en) | 2005-05-13 | 2005-05-13 | Film electro-luminescent color display device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100392827A CN100566488C (en) | 2005-05-13 | 2005-05-13 | Film electro-luminescent color display device and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN1700820A CN1700820A (en) | 2005-11-23 |
| CN100566488C true CN100566488C (en) | 2009-12-02 |
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|---|---|---|---|
| CNB2005100392827A Expired - Fee Related CN100566488C (en) | 2005-05-13 | 2005-05-13 | Film electro-luminescent color display device and preparation method thereof |
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| Country | Link |
|---|---|
| CN (1) | CN100566488C (en) |
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2005
- 2005-05-13 CN CNB2005100392827A patent/CN100566488C/en not_active Expired - Fee Related
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|---|---|
| CN1700820A (en) | 2005-11-23 |
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Granted publication date: 20091202 Termination date: 20120513 |