CN100565708C - Non-volatile storage device and its controller - Google Patents
Non-volatile storage device and its controller Download PDFInfo
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- CN100565708C CN100565708C CNB2005101328813A CN200510132881A CN100565708C CN 100565708 C CN100565708 C CN 100565708C CN B2005101328813 A CNB2005101328813 A CN B2005101328813A CN 200510132881 A CN200510132881 A CN 200510132881A CN 100565708 C CN100565708 C CN 100565708C
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- 239000000758 substrate Substances 0.000 claims description 31
- 230000005540 biological transmission Effects 0.000 claims description 24
- 230000009977 dual effect Effects 0.000 claims description 7
- 230000006870 function Effects 0.000 abstract description 8
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- 241001269238 Data Species 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 1
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Abstract
The invention discloses a nonvolatile memory device, which has the function of improving power supply voltage and signal level and can adopt a nonvolatile memory with working voltage higher than the power supply voltage supplied by an application device as a storage medium. The non-volatile memory device includes a supply voltage boosting circuit , a non-volatile memory cell and a controller. The supply voltage boosting circuit boosts a lower supply voltage (supply voltage) supplied from an application device to a higher operating voltage (operating voltage) of the nonvolatile memory. The controller adjusts the interface signal to a proper interface signal level by matching with the power voltage and the working voltage, so as to avoid the phenomenon that the nonvolatile memory cell cannot correctly receive the signal due to the damage of the interface caused by over-high signal level or over-low signal level.
Description
Technical field
The present invention relates to a kind of Nonvolatile memory devices, particularly relate to a kind of Nonvolatile memory devices that promotes supply voltage and signal level unit.
Background technology
Volume is the Nonvolatile memory devices of miniaturization (non-volatile memory storageapparatus) day by day, as storage card (memory card); Its application is increasingly extensive, and is that mancarried device (portable device) generally adopts gradually.For cooperating portable use, as the needs of mobile phone (mobile phone), it is compact that the volume of this memory storage also tends to day by day, and reduce its power consumption; Wish to dwindle small product size and prolong the battery needs of service time to satisfy the user.Thereby the product that new release is arranged has reduced the development of power supply supply voltage (power supply voltage) with the interface signal level (interface signallevel) of this memory storage.
For meeting the requirement that reduces power supply supply voltage (low supply voltage), prior art must adopt operating voltage (operating voltage) to meet the nonvolatile memory of the controller of application apparatus supply voltage and low-voltage (lowoperating voltage) as medium; Also be the operating voltage of nonvolatile memory stores medium, and the signal level of controller, memory interface, all quite or be supplied to the supply voltage of memory storage a little less than application apparatus.Only this type of low power supply is supplied the Nonvolatile memory devices of voltage, because of the restriction of voltage must be adopted more not universal and the lower low voltage non-volatile memories of capacity, cause the max cap. that Nonvolatile memory devices reached of low power supply supply voltage thereby lower, and cost is higher.
See also Fig. 1, be existing low voltage non-volatile memory storage functional block diagram, wherein,, only have voltage stabilizing and suppress function such as surging, so that stable internal work voltage V to be provided because power supply modulator circuit 11 can not the booster tension level
IOGive nonvolatile memory 13 and controller 15; So internal work voltage V
IOBe equivalent to approximately or be lower than the outside supply voltage V
S, and internal interface signal level V
INTAlso be equivalent to external interface signals level V approximately
EXTAnd the Nonvolatile memory devices 1 of the low power supply supply of above-mentioned this class voltage, its capacity is less and cost is higher.
For overcoming this problem, the present invention is at the Nonvolatile memory devices of low supply voltage, supply voltage enhanced feature and signal level translation function are set, make its nonvolatile memory that can adopt general work voltage higher (normaloperating voltage) as medium, to reach the cost that reduces memory storage, reach the target that improves its memory capacity.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of Nonvolatile memory devices and controller thereof, be used to realize to adopt operating voltage than the high nonvolatile memory of supply voltage as medium, with the cost that reduces memory storage and improve its memory capacity.
To achieve these goals, the invention provides a kind of Nonvolatile memory devices, it is characterized in that, comprising:
One supply voltage promotes circuit, is used to receive an external voltage and output one builtin voltage after boosting;
One non-volatile memory cells is used to receive this builtin voltage so that the storage of numerical information to be provided; And
One controller includes:
One application apparatus interface unit is used to receive this external voltage and is electrically connected on an application apparatus, and and this application apparatus between the transmission one external signal, wherein the voltage level of this external signal meets the voltage level of this external voltage; And
One non-volatile memory interface unit, be used to receive this builtin voltage and be electrically connected on this non-volatile memory cells, and and this non-volatile memory cells between the transmission one internal signal, wherein the voltage level of this internal signal meets the voltage level of this builtin voltage.
Described Nonvolatile memory devices, wherein, this non-volatile memory cells comprises at least one nonvolatile memory.
Described Nonvolatile memory devices, wherein, this controller also comprises:
One embedded microprocessor is used to carry out a control program;
One program code memory is used to store this control program and carries out required program code;
One data-carrier store is used to store the temporary data of carrying out of this control program; And
One transmission data buffer unit, when being used for keeping in this this Nonvolatile memory devices of application apparatus access, and the information that exchanges between this nonvolatile memory.
Described Nonvolatile memory devices, wherein, this Nonvolatile memory devices also comprises:
One substrate, be used to be provided with this supply voltage and promote circuit, this controller and this non-volatile memory cells, utilize this substrate to be electrically connected the characteristic of conducting, make that each assembly transmits corresponding signal each other on this substrate, and an electrical connection conducting interface is set on this substrate, to connect this application apparatus; And
One encapsulating housing is used to encapsulate the assembly in this Nonvolatile memory devices, and exposes this electrical connection conducting interface to connect this application apparatus.
Described Nonvolatile memory devices, wherein, this substrate is a printed circuit board (PCB).
Described Nonvolatile memory devices, wherein, this builtin voltage is the operating voltage of this non-volatile memory cells.
Described Nonvolatile memory devices, wherein, this external voltage is the power supply supply voltage of this Nonvolatile memory devices.
To achieve these goals, the present invention also provides a kind of controller of Nonvolatile memory devices of dual interface signal level, it is characterized in that, comprising:
One non-volatile memory interface unit is connected in a non-volatile memory cells, is used for the signal level between this controller and this non-volatile memory cells is promoted to the operating voltage of this non-volatile memory cells; And
One application apparatus interface unit is connected in an application apparatus, is used for the signal level between this controller and an application apparatus is met the power supply supply voltage of this Nonvolatile memory devices.
The controller of the Nonvolatile memory devices of described dual interface signal level wherein, also comprises:
One embedded microprocessor is used to carry out a control program;
One program code memory is used to store this control program and carries out required program code;
One data-carrier store is used to store the temporary data of carrying out of this control program; And
One transmission data buffer unit, when being used for keeping in this this Nonvolatile memory devices of application apparatus access, and the information that exchanges between this non-volatile memory cells.
To achieve these goals, the present invention also provides a kind of Nonvolatile memory devices, it is characterized in that, comprising:
One non-volatile memory cells; And
One controller comprises:
One supply voltage promotes circuit, is used to receive an external voltage and exports a builtin voltage after boosting, and this builtin voltage is offered this non-volatile memory cells;
One application apparatus interface unit is used to receive this external voltage and is electrically connected on an application apparatus, and and this application apparatus between the transmission one external signal, wherein the voltage level of this external signal meets the voltage level of this external voltage; And
One non-volatile memory interface unit, be used to receive this builtin voltage and be electrically connected on this non-volatile memory cells, and and this non-volatile memory cells between the transmission one internal signal, wherein the voltage level of this internal signal meets the voltage level of this builtin voltage.
Described Nonvolatile memory devices, wherein, this builtin voltage is the operating voltage of this non-volatile memory cells.
Described Nonvolatile memory devices, wherein, this non-volatile memory cells comprises at least one nonvolatile memory.
Described Nonvolatile memory devices, wherein, this controller also comprises:
One embedded microprocessor is used to carry out a control program;
One program code memory is used to store this control program and carries out required program code;
One data-carrier store is used to store the temporary data of carrying out of this control program; And
One transmission data buffer unit, when being used for keeping in this this Nonvolatile memory devices of application apparatus access, and the information that exchanges between this non-volatile memory cells.
Described Nonvolatile memory devices, wherein, this Nonvolatile memory devices also comprises:
One substrate is used to be provided with this controller and this non-volatile memory cells, utilizes this substrate to be electrically connected the characteristic of conducting, makes that each assembly transmits corresponding signal each other on this substrate, and is provided with one is electrically connected the conducting interface on this substrate, to connect this application apparatus; And
One encapsulating housing is used to encapsulate the assembly in this Nonvolatile memory devices, and exposes this electrical connection conducting interface to connect this application apparatus.
Described Nonvolatile memory devices, wherein, this substrate is a printed circuit board (PCB).
Described Nonvolatile memory devices, wherein, this builtin voltage is the operating voltage of this non-volatile memory cells.
Described Nonvolatile memory devices, wherein, this external voltage is the power supply supply voltage of this Nonvolatile memory devices.
To achieve these goals, the present invention also provides a kind of controller with the Nonvolatile memory devices that promotes supply voltage and signal level, it is characterized in that, comprising:
One non-volatile memory interface unit is connected in a non-volatile memory cells, is used for the signal level between this controller and this non-volatile memory cells is promoted to the operating voltage of this non-volatile memory cells;
One supply voltage promotes circuit, is used for the power supply supply voltage of a Nonvolatile memory devices is promoted to the operating voltage of this non-volatile memory cells, and is supplied to this non-volatile memory interface unit and this non-volatile memory cells; And
One application apparatus interface unit is connected in an application apparatus, is used for the signal level between this controller and this application apparatus is met the power supply supply voltage of this Nonvolatile memory devices.
Described controller with the Nonvolatile memory devices that promotes supply voltage and signal level wherein, also comprises:
One embedded microprocessor is used to carry out a control program;
One program code memory is used to store the required program code of this control program;
One data-carrier store is used to store this control program related data; And
One transmission data buffer unit, when being used for keeping in this this Nonvolatile memory devices of application apparatus access, and the information that exchanges between this non-volatile memory cells.
The present invention is by being provided with supply voltage enhanced feature and signal level translation function in the Nonvolatile memory devices of low supply voltage, make it can adopt the higher nonvolatile memory of general work voltage, reached the target that reduces the cost of memory storage and improve its memory capacity as medium.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Fig. 1 is existing low voltage non-volatile memory storage functional block diagram;
Fig. 2 has the Nonvolatile memory devices functional block diagram that promotes supply voltage and signal level;
Fig. 3 is the Nonvolatile memory devices controller function calcspar with dual interface signal level;
Fig. 4 has the Nonvolatile memory devices functional block diagram that promotes supply voltage and signal level and adopt integrating controller;
Fig. 5 has the Nonvolatile memory devices controller function calcspar that promotes supply voltage and signal level.
Wherein, main Reference numeral:
Nonvolatile memory devices 1
Power supply modulator circuit 11
Nonvolatile memory 13
Controller 15
Operating voltage V
IO
Supply voltage V
S
Internal interface signal level V
INT
External interface signals level V
EXT
Supply voltage promotes circuit 21
Application apparatus interface unit 251
Non-volatile memory interface unit 253
Power supply modulator circuit 254
Data-carrier store 257
Outside supply voltage V
S
Internal work voltage V
IO
The voltage level V of external signal
EXT
The voltage level V of internal signal
INT
Nonvolatile memory devices 4
Supply voltage promotes circuit 451
Non-volatile memory cells 43
Application apparatus interface unit 453
Non-volatile memory interface unit 455
Power supply modulator circuit 456
Data-carrier store 459
Outside supply voltage V
S
Internal work voltage V
IO
The voltage level V of external signal
EXT
The voltage level V of internal signal
INT
Application apparatus 5
Embodiment
The application apparatus power supply was given Nonvolatile memory devices in the past, and its supply voltage is lower than the internal work voltage (Internal Operating Voltage) of nonvolatile memory in the Nonvolatile memory devices.See also Fig. 2, for having the Nonvolatile memory devices functional block diagram that promotes supply voltage and signal level, and the present invention promptly needs to promote circuit 21 (Booster) by supply voltage and supply voltage V with the outside for making the non-volatile memory cells 23 still can operate as normal
SLevel be promoted to and meet the required internal work voltage V of non-volatile memory cells 23 work
IO
Because must being situated between with application apparatus 3 and non-volatile memory cells 23 simultaneously, controller 25 connects; And the electrical reference signal of application apparatus interface unit 251 pressure (signal reference voltage) Vext_ref is outside supply voltage V at this moment
S, but not the electrical reference signal of volatile memory interface unit 253 pressure Vint_ref is internal work voltage V
IO, and internal work voltage V
IOBe higher than outside supply voltage V
SFor making identification that signal transmission both sides can be correctly stable voltage level V by controller 25 and 3 one external signals of application apparatus
EXT, and the voltage level V of controller 25 and 23 one internal signals of non-volatile memory cells
INTHigh potential signal, controller 25 inside must be with the reference power source of two group interfaces independently separately, so become the setting of an application apparatus interface unit 251 and a non-volatile memory interface unit 253 double nips.Wherein application apparatus interface unit 251 is according to outside supply voltage V
SProduce external signal, but not volatile memory interface unit 253 is according to internal work voltage V
IOHandle internal signal.Again because internal work voltage V
IOBe higher than outside supply voltage V
SSo, the voltage level V of internal signal
INTVoltage level V greater than external signal
EXT
And the structure of above-mentioned Nonvolatile memory devices 2 integral body is that a supply voltage promotes circuit 21 receptions one outside supply voltage V
S, and after boosting, export an internal work voltage V
IOAnd non-volatile memory cells 23 receives this internal work voltage V
IOSo that the storage of numerical information to be provided, and comprise at least one nonvolatile memory.Then controller 25 comprises an application apparatus interface unit 251, receives this outside supply voltage V
SAnd be electrically connected on application apparatus 3, and and 3 transmission one of application apparatus meet outside supply voltage V
SExternal signal, i.e. the voltage level V of external signal
EXTWith outside supply voltage V
SConform to; Non-volatile memory interface unit 253 receives internal work voltage V on the other hand
IOAnd be electrically connected on non-volatile memory cells 23, and and 23 transmission one of non-volatile memory cells meet internal work voltage V
IOInternal signal, i.e. the voltage level V of internal signal
INTWith internal work voltage V
IOConform to.So can reach and adopt operating voltage to be higher than the purpose of the nonvolatile memory of power supply supply voltage as medium.
Then, further introduce the above-mentioned controller with dual interface signal level 25, see also Fig. 3, for having the Nonvolatile memory devices controller function calcspar of dual interface signal level.Controller 25 from the above utilizes non-volatile memory interface unit 253 (interface unit) to be connected in non-volatile memory cells 23, but not volatile memory interface unit 253 is mainly used in the internal work voltage V that the signal level of 23 of controller 25 and non-volatile memory cells is promoted to non-volatile memory cells 23
IOAnd application apparatus interface unit 251 is connected in application apparatus 3, is used for the signal level of 3 of controller 25 and application apparatus is met the outside supply voltage V of Nonvolatile memory devices 2
SIn addition, this controller 25 also comprises and utilizes an embedded microprocessor 255 (embedded micro-processor) to carry out a control program; The required program code of one program code memory (code memory), 256 these control programs of storage; One data-carrier store (data memory), 257 temporary these control program related datas; And when utilizing a transmission data buffer unit (data buffer unit) 258 to keep in application apparatus 3 access Nonvolatile memory devices 2, and the information of 23 exchanges of this non-volatile memory cells.Power supply modulator circuit 254 receives outside supply voltage V in addition
S, to provide associated component required working power.
Moreover Nonvolatile memory devices 2 of the present invention can comprise that also utilizing a substrate (substrate) that (mount) supply voltage is set promotes circuit 21, controller 25 and non-volatile memory cells 23.Utilize this substrate to be electrically connected the characteristic of conducting (electrical conductivity), make that each assembly transmits corresponding signal each other on this substrate, and an electrical connection conducting interface (electrical conductiveinterface) is set on this substrate, to connect application apparatus 3.Also comprise in addition and utilize an encapsulating housing (sealing package) to encapsulate assembly in the Nonvolatile memory devices 2, and expose (exposing) this electrical connection conducting interface to connect this application apparatus 3.Wherein this substrate can be a printed circuit board (PCB) (printed circuit board).
See also Fig. 4, for having the Nonvolatile memory devices functional block diagram that promotes supply voltage and signal level and adopt integrating controller, wherein Nonvolatile memory devices comprises a non-volatile memory cells 43 and a controller 45.Wherein non-volatile memory cells 43 comprises at least one nonvolatile memory.And controller 45 utilizes a supply voltage to promote the outside supply voltage V that circuit 451 receptions one application apparatus 5 provides
S, outside supply voltage V
SOutput one internal work voltage V after supply voltage lifting circuit 451 boosts
IO, and with internal work voltage V
IOOffer non-volatile memory cells 43; And controller 45 utilizes application apparatus interface unit 453 to be electrically connected on an application apparatus 5 and receive outside supply voltage V
S, and and the voltage level V of the external signal of 5 transmission of application apparatus
EXTMeet outside supply voltage V
SUtilize non-volatile memory interface unit 455 to be electrically connected on power supply lifting circuit 451 in the controller 45 and receive internal work voltage V
IO, and and the voltage level V of the internal signal of 43 transmission of non-volatile memory cells
INTMeet internal work voltage V
IO
Because desire is used internal work voltage V
IOOutside supply voltage V greater than application apparatus 5
SSo controller 45 must utilize the setting of 455 pairs of reference potentials of application apparatus interface unit 453 and non-volatile memory interface unit, connect and can be situated between with application apparatus 5 and non-volatile memory interface unit 455 simultaneously.At this moment, the electrical reference signal of application apparatus interface unit 453 pressure Vext_ref is outside supply voltage V
S, but not the electrical reference signal of volatile memory interface unit 455 pressure Vint_ref is internal work voltage V
IO, and internal work voltage V
IOBe higher than outside supply voltage V
SFor making identification that signal transmission both sides can be correctly stable voltage level V by controller 45 and 5 one external signals of application apparatus
EXT, and the voltage level V of controller 45 and 43 one internal signals of non-volatile memory cells
INTHigh potential signal, controller 45 inside must be with the reference power source of two group interfaces independently separately, so become the setting of 455 pairs of reference potentials of an application apparatus interface unit 453 and a non-volatile memory interface unit.Wherein application apparatus interface unit 453 is according to outside supply voltage V
SProduce this external signal, so that the voltage level V of this external signal
EXTMeet outside supply voltage V
S, but not volatile memory interface unit 455 is according to internal work voltage V
IOHandle this internal signal, so that the voltage level V of this internal signal
INTMeet internal work voltage V
IOAgain because internal work voltage V
IOBe higher than outside supply voltage V
SSo, the voltage level V of internal signal
INTVoltage level V greater than external signal
EXT
Then further introduce the controller 45 that above-mentioned integration promotes supply voltage and signal level, see also Fig. 5, for having the Nonvolatile memory devices controller function calcspar that promotes supply voltage and signal level.Hold the described controller 45 of Fig. 4 and utilize non-volatile memory interface unit 455 to be connected in non-volatile memory cells 43, but not volatile memory interface unit 455 is mainly used in the internal work voltage V that the signal level of 43 of controller 45 and non-volatile memory cells is promoted to non-volatile memory cells 43
IOAnd application apparatus interface unit 453 is connected in the power supply supply voltage V that application apparatus 5 is used for the signal level of 5 of controller 45 and application apparatus is met Nonvolatile memory devices 4
SWherein, utilize power supply modulator circuit 456 to receive power supply supply voltage V
S, with the power supply supply voltage V after handling
SPass to supply voltage and promote circuit 451, the power supply supply voltage V after supply voltage lifting circuit 451 is handled it then
SOutput one internal work voltage V boosts
IOThis controller 45 comprises that also utilization-embedded microprocessor 457 carries out a control program in addition; The required program code of one program code memory, 458 these control programs of storage; One data-carrier store, 459 temporary these control program related datas; And when utilizing a transmission data buffer unit 454 to keep in application apparatus 5 access Nonvolatile memory devices 4, and the information of 43 exchanges of this non-volatile memory cells.
Moreover Nonvolatile memory devices 4 of the present invention also can comprise and utilizes a substrate that controller 45 and non-volatile memory cells 43 are set.Utilize this substrate to be electrically connected the characteristic of conducting, make that each assembly transmits corresponding signal each other on this substrate, and on this substrate, be provided with one and be electrically connected the conducting interface to connect application apparatus 5.Also comprise in addition and utilize an encapsulating housing to encapsulate assembly in the Nonvolatile memory devices 4, and expose this electrical connection conducting interface to connect this application apparatus 5.Wherein this substrate can be a printed circuit board (PCB).
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection domain of the appended claim of the present invention.
Claims (19)
1, a kind of Nonvolatile memory devices is characterized in that, comprising:
One supply voltage promotes circuit, is used to receive an external voltage and output one builtin voltage after boosting;
One non-volatile memory cells be used to receive this builtin voltage so that the storage of numerical information to be provided, and this non-volatile memory cells works in the voltage level that is higher than this external voltage; And
One controller includes:
One application apparatus interface unit is used to receive this external voltage and is electrically connected on an application apparatus, and and this application apparatus between the transmission one external signal, wherein the voltage level of this external signal meets the voltage level of this external voltage; And
One non-volatile memory interface unit, be used to receive this builtin voltage and be electrically connected on this non-volatile memory cells, and and this non-volatile memory cells between the transmission one internal signal, wherein the voltage level of this internal signal meets the voltage level of this builtin voltage.
2, Nonvolatile memory devices according to claim 1 is characterized in that, this non-volatile memory cells comprises at least one nonvolatile memory.
3, Nonvolatile memory devices according to claim 2 is characterized in that, this controller also comprises:
One embedded microprocessor is used to carry out a control program;
One program code memory is used to store this control program and carries out required program code;
One data-carrier store is used to store the temporary data of carrying out of this control program; And
One transmission data buffer unit, when being used for keeping in this this Nonvolatile memory devices of application apparatus access, and the information that exchanges between this nonvolatile memory.
4, Nonvolatile memory devices according to claim 1 is characterized in that, also comprises:
One substrate, be used to be provided with this supply voltage and promote circuit, this controller and this non-volatile memory cells, utilize this substrate to be electrically connected the characteristic of conducting, make that each assembly transmits corresponding signal each other on this substrate, and an electrical connection conducting interface is set on this substrate, to connect this application apparatus; And
One encapsulating housing is used to encapsulate the assembly in this Nonvolatile memory devices, and exposes this electrical connection conducting interface to connect this application apparatus.
5, Nonvolatile memory devices according to claim 4 is characterized in that, this substrate is a printed circuit board (PCB).
6, Nonvolatile memory devices according to claim 1 is characterized in that, this builtin voltage is the operating voltage of this non-volatile memory cells.
7, Nonvolatile memory devices according to claim 1 is characterized in that, this external voltage is the power supply supply voltage of this Nonvolatile memory devices.
8, a kind of controller of Nonvolatile memory devices of dual interface signal level is used to that a non-volatile memory cells is worked in and is higher than the voltage level that power supply is supplied voltage, it is characterized in that, comprising:
One non-volatile memory interface unit is connected in this non-volatile memory cells, is used for the signal level between this controller and this non-volatile memory cells is promoted to the operating voltage of this non-volatile memory cells; And
One application apparatus interface unit is connected in an application apparatus, is used for the signal level between this controller and an application apparatus is met the power supply supply voltage of this Nonvolatile memory devices.
9, the controller of the Nonvolatile memory devices of dual interface signal level according to claim 8 is characterized in that, also comprises:
One embedded microprocessor is used to carry out a control program;
One program code memory is used to store this control program and carries out required program code;
One data-carrier store is used to store the temporary data of carrying out of this control program; And
One transmission data buffer unit, when being used for keeping in this this Nonvolatile memory devices of application apparatus access, and the information that exchanges between this non-volatile memory cells.
10, a kind of Nonvolatile memory devices is characterized in that, comprising:
One non-volatile memory cells; And
One controller comprises:
One supply voltage promotes circuit, is used to receive an external voltage and exports a builtin voltage after boosting, and this builtin voltage is offered this non-volatile memory cells;
One application apparatus interface unit is used to receive this external voltage and is electrically connected on an application apparatus, and and this application apparatus between the transmission one external signal, wherein the voltage level of this external signal meets the voltage level of this external voltage; And
One non-volatile memory interface unit, be used to receive this builtin voltage and be electrically connected on this non-volatile memory cells, and and this non-volatile memory cells between the transmission one internal signal, wherein the voltage level of this internal signal meets the voltage level of this builtin voltage, thereby makes this non-volatile memory cells work in the voltage level that is higher than this external voltage.
11, Nonvolatile memory devices according to claim 10 is characterized in that, this builtin voltage is the operating voltage of this non-volatile memory cells.
12, Nonvolatile memory devices according to claim 10 is characterized in that, this non-volatile memory cells comprises at least one nonvolatile memory.
13, Nonvolatile memory devices according to claim 12 is characterized in that, this controller also comprises:
One embedded microprocessor is used to carry out a control program;
One program code memory is used to store this control program and carries out required program code;
One data-carrier store is used to store the temporary data of carrying out of this control program; And
One transmission data buffer unit, when being used for keeping in this this Nonvolatile memory devices of application apparatus access, and the information that exchanges between this non-volatile memory cells.
14, Nonvolatile memory devices according to claim 10 is characterized in that, this Nonvolatile memory devices also comprises:
One substrate is used to be provided with this controller and this non-volatile memory cells, utilizes this substrate to be electrically connected the characteristic of conducting, makes that each assembly transmits corresponding signal each other on this substrate, and is provided with one is electrically connected the conducting interface on this substrate, to connect this application apparatus; And
One encapsulating housing is used to encapsulate the assembly in this Nonvolatile memory devices, and exposes this electrical connection conducting interface to connect this application apparatus.
15, Nonvolatile memory devices according to claim 14 is characterized in that, this substrate is a printed circuit board (PCB).
16, Nonvolatile memory devices according to claim 10 is characterized in that, this builtin voltage is the operating voltage of this non-volatile memory cells.
17, Nonvolatile memory devices according to claim 10 is characterized in that, this external voltage is the power supply supply voltage of this Nonvolatile memory devices.
18, a kind of controller with the Nonvolatile memory devices that promotes supply voltage and signal level is used to that a non-volatile memory cells is worked in and is higher than the voltage level that power supply is supplied voltage, it is characterized in that, comprising:
One non-volatile memory interface unit is connected in this non-volatile memory cells, is used for the signal level between this controller and this non-volatile memory cells is promoted to the operating voltage of this non-volatile memory cells;
One supply voltage promotes circuit, is used for the power supply supply voltage of a Nonvolatile memory devices is promoted to the operating voltage of this non-volatile memory cells, and is supplied to this non-volatile memory interface unit and this non-volatile memory cells; And
19, according to claim 18 have promote power supply
Controller with the Nonvolatile memory devices of signal level is characterized in that, also comprises:
One embedded microprocessor is used to carry out a control program;
One program code memory is used to store the required program code of this control program;
One data-carrier store is used to store this control program related data; And
One transmission data buffer unit, when being used for keeping in this this Nonvolatile memory devices of application apparatus access, and the information that exchanges between this non-volatile memory cells.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005101328813A CN100565708C (en) | 2005-12-27 | 2005-12-27 | Non-volatile storage device and its controller |
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|---|---|---|---|
| CNB2005101328813A CN100565708C (en) | 2005-12-27 | 2005-12-27 | Non-volatile storage device and its controller |
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| CN100565708C true CN100565708C (en) | 2009-12-02 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6687164B2 (en) * | 2002-02-28 | 2004-02-03 | Renesas Technology Corporation | Nonvolatile memory, IC card and data processing system |
| CN1503273A (en) * | 2002-11-19 | 2004-06-09 | ���µ�����ҵ��ʽ���� | Booster circuit and nonvolatile semiconductor memory device including the booster circuit |
-
2005
- 2005-12-27 CN CNB2005101328813A patent/CN100565708C/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6687164B2 (en) * | 2002-02-28 | 2004-02-03 | Renesas Technology Corporation | Nonvolatile memory, IC card and data processing system |
| CN1503273A (en) * | 2002-11-19 | 2004-06-09 | ���µ�����ҵ��ʽ���� | Booster circuit and nonvolatile semiconductor memory device including the booster circuit |
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| CN1992081A (en) | 2007-07-04 |
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