CN100561796C - X-band substrate integrated waveguide single-board radio frequency system - Google Patents
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Abstract
本发明涉及一种微波毫米波用单板射频系统，尤其涉及一种可用于微波毫米波的X波段基片集成波导单板射频系统。X波段基片集成波导单板射频系统包括介质基片，在介质基片上设有天线、双工器、射频接收低噪声放大器、射频接收滤波器、下变频器、本振功分器、上变频器、射频发射滤波器、发射功率放大器、中频发射电路、射频本振锁相环路和中频接收电路。本发明中所有的无源元件在基片内部实现，无需购买独立的元件，实现了“基片即元件”，极大地降低了系统成本，所有的无源元件在基片内部实现，具有与矩形金属波导相类似的特性，与微带电路相比，Q值高，损耗低，辐射干扰小。
The invention relates to a single-board radio frequency system for microwave and millimeter waves, in particular to an X-band substrate integrated waveguide single-board radio frequency system that can be used for microwave and millimeter waves. The X-band substrate integrated waveguide single-board RF system includes a dielectric substrate, on which there are antennas, duplexers, RF receiving low-noise amplifiers, RF receiving filters, down-converters, local oscillator power dividers, and up-converters. device, radio frequency transmitting filter, transmitting power amplifier, intermediate frequency transmitting circuit, radio frequency local oscillator phase-locked loop and intermediate frequency receiving circuit. In the present invention, all passive components are implemented inside the substrate, without the need to purchase independent components, and "the substrate is the component" is realized, which greatly reduces the system cost. All passive components are implemented inside the substrate, which has the same rectangular Compared with the microstrip circuit, the metal waveguide has similar characteristics, high Q value, low loss, and small radiation interference.
Description
技术领域 technical field
本发明涉及一种微波毫米波用单板射频系统，尤其涉及一种可用于微波毫米波的X波段基片集成波导单板射频系统。The invention relates to a single-board radio frequency system for microwave and millimeter waves, in particular to an X-band substrate integrated waveguide single-board radio frequency system that can be used for microwave and millimeter waves.
背景技术 Background technique
通信技术的发展要求各个部件易于集成、小型化、轻量化和高可靠性。传统高性能的微波通信系统中，射频的各个模块、天线、双工器、中频电路在结构上是相互分离的。其原因在于：为了提高性能各部件采用不同的技术实现，例如天线采用反射面天线或振子天线等、双工器采用传统金属波导腔体双工器、射频滤波器采用金属波导滤波器或陶瓷滤波器等、中频电路与各个单独的射频器件分别在电路板上制作。这提高了系统的成本、而且重量体积都比较大。因此，需要提出新型的集成技术，以及在此基础上发展起来的器件、布版规则与集成技术，在实现高性能的同时，能够达到高的集成度，直至微波射频系统的所有元器件实现单板集成。The development of communication technology requires easy integration, miniaturization, light weight and high reliability of various components. In a traditional high-performance microwave communication system, each radio module, antenna, duplexer, and intermediate frequency circuit are structurally separated from each other. The reason is that in order to improve performance, various components are realized by different technologies, such as reflector antennas or dipole antennas for antennas, traditional metal waveguide cavity duplexers for duplexers, and metal waveguide filters or ceramic filters for radio frequency filters. Devices, etc., intermediate frequency circuits and individual radio frequency devices are fabricated on circuit boards. This increases the cost of the system, and the weight and volume are relatively large. Therefore, it is necessary to propose a new type of integration technology, as well as the devices, layout rules and integration technology developed on this basis. board integration.
发明内容 Contents of the invention
本发明提供一种用于解决微波毫米波电路的高性能单板集成问题并适合于微波毫米波电路与集成电路的设计的X波段基片集成波导单板射频系统，具有单板集成系统损耗小的优点。The present invention provides an X-band substrate-integrated waveguide single-board radio frequency system for solving the problem of high-performance single-board integration of microwave and millimeter-wave circuits and suitable for the design of microwave and millimeter-wave circuits and integrated circuits, and has a single-board integrated system with low loss The advantages.
本发明采用如下技术方案：The present invention adopts following technical scheme:
一种用于微波毫米波电路的X波段基片集成波导单板射频系统，包括介质基片，在介质基片上设有天线、双工器、射频接收低噪声放大器、射频接收滤波器、下变频器、本振功分器、上变频器、射频发射滤波器、发射功率放大器、中频发射电路、射频本振锁相环路和中频接收电路，双工器的合成端与天线的馈电端连接，双工器的接收端口及发射端口分别与射频接收低噪声放大器的输入端及发射功率放大器的输出端连接，射频接收低噪声放大器的输出端与射频接收滤波器的输入端连接，射频接收滤波器的输出端与下变频器的射频端连接，下变频器的本振端与本振功分器的第二功率分配端连接，本振功分器的第一功率分配端与上变频器的本振端连接，上变频器的射频端与射频发射滤波器的输入端连接，射频发射滤波器的输出端与发射功率放大器的输入端连接，上述上变频器的中频端及电源端分别与中频发射电路的电源端及中频端连接，中频发射电路上的另两个端口分别为发射I端和发射Q端，上述本振功分器的功率输入端与射频本振锁相环路的输出端连接，上述下变频器的中频端及电源端分别与中频接收电路的中频端及电源端连接，中频接收电路上的另两个端口分别为接收I端和接收Q端，在上述射频接收低噪声放大器、射频接收滤波器、下变频器、本振功分器、上变频器、射频发射滤波器、发射功率放大器、中频发射电路、射频本振锁相环路或中频接收电路分别设有隔离金属框。An X-band substrate integrated waveguide single-board radio frequency system for microwave and millimeter wave circuits, including a dielectric substrate, on which an antenna, a duplexer, a radio frequency receiving low noise amplifier, a radio frequency receiving filter, and a down conversion device, local oscillator power divider, up-converter, radio frequency transmitting filter, transmitting power amplifier, intermediate frequency transmitting circuit, radio frequency local oscillator phase-locked loop and intermediate frequency receiving circuit, the synthesizing end of the duplexer is connected to the feeding end of the antenna , the receiving port and the transmitting port of the duplexer are respectively connected with the input end of the radio frequency receiving low noise amplifier and the output end of the transmitting power amplifier, the output end of the radio frequency receiving low noise amplifier is connected with the input end of the radio frequency receiving filter, and the radio frequency receiving filter The output terminal of the down converter is connected to the radio frequency terminal of the down converter, the local oscillator terminal of the down converter is connected to the second power distribution terminal of the local oscillator power divider, and the first power distribution terminal of the local oscillator power divider is connected to the up converter The local oscillator is connected, the RF end of the up-converter is connected to the input end of the RF transmit filter, the output end of the RF transmit filter is connected to the input end of the transmit power amplifier, and the intermediate frequency end and power supply end of the above-mentioned up-converter are respectively connected to the intermediate frequency The power supply terminal of the transmitting circuit is connected to the intermediate frequency terminal, and the other two ports on the intermediate frequency transmitting circuit are respectively the transmitting I terminal and the transmitting Q terminal, the power input terminal of the above-mentioned local oscillator power divider and the output terminal of the RF local oscillator phase-locked loop connection, the intermediate frequency terminal and the power supply terminal of the above-mentioned down-converter are respectively connected with the intermediate frequency terminal and the power supply terminal of the intermediate frequency receiving circuit, and the other two ports on the intermediate frequency receiving circuit are respectively the receiving I terminal and the receiving Q terminal. Amplifiers, radio frequency receiving filters, down converters, local oscillator power splitters, up converters, radio frequency transmitting filters, transmitting power amplifiers, intermediate frequency transmitting circuits, radio frequency local oscillator phase-locked loops or intermediate frequency receiving circuits are respectively provided with isolated metal frame.
本发明在介质基片上实现了高Q值、低损耗基片集成波导，这种波导具有和普通矩形金属波导相类似的传输特性和场分布；然后，利用基片集成波导形成了X波段基片集成波导高集成度单板射频系统中的无源元件，包括天线、双工器、功分器、滤波器等；同时设计了射频接收低噪声放大器、下变频器；发射功率放大器、上变频器；射频本振锁相环路及本振放大电路、中频发射电路与锁相环路、中频接收电路与锁相环路等。在上述元器件的基础上设计了基片集成波导器件与有源器件之间的连接，以及基于基片集成波导的器件隔离方案。最终将包括天线在内的整个X波段射频子系统在一块单板(PCB)上实现。在这个基片集成波导高集成度单板射频系统中，所有的结构都是利用在介质基片上打一系列的金属通孔阵列来实现，从而有利于无源器件在微波毫米波电路设计中的集成；根据布版的需要，合理地选择基片集成波导元件与有源器件之间的结合方式；在设计器件之间的隔离仓时，将金属压条放置在基片集成波导上方，以进一步减小电路板的面积。The invention realizes high-Q value and low-loss substrate integrated waveguide on the dielectric substrate, and this waveguide has transmission characteristics and field distribution similar to ordinary rectangular metal waveguides; then, the X-band substrate is formed by using the substrate integrated waveguide Passive components in integrated waveguide high-integration single-board RF systems, including antennas, duplexers, power splitters, filters, etc.; at the same time, design RF receiving low-noise amplifiers, down-converters; transmit power amplifiers, up-converters ; RF local oscillator phase-locked loop and local oscillator amplifier circuit, intermediate frequency transmitting circuit and phase-locked loop, intermediate frequency receiving circuit and phase-locked loop, etc. On the basis of the above components, the connection between the substrate integrated waveguide device and the active device, and the device isolation scheme based on the substrate integrated waveguide are designed. Finally, the entire X-band radio frequency subsystem including the antenna is realized on a single board (PCB). In this substrate-integrated waveguide high-integration single-board radio frequency system, all the structures are realized by punching a series of metal through-hole arrays on the dielectric substrate, which is conducive to the design of passive devices in microwave and millimeter wave circuits. Integration; according to the needs of the layout, reasonably select the combination method between the substrate integrated waveguide components and the active device; when designing the isolation chamber between the devices, place the metal bead on the substrate integrated waveguide to further reduce the Small circuit board area.
与现有技术相比，本发明具有如下优点：Compared with prior art, the present invention has following advantage:
1)射频子系统中包括天线在内的所有元件均在一块单板上实现，极大的提高了系统的集成度；1) All components including the antenna in the radio frequency subsystem are implemented on a single board, which greatly improves the integration of the system;
2)所有的无源元件在基片内部实现，无需购买独立的元件，实现了“基片即元件”，极大地降低了系统成本；2) All passive components are implemented inside the substrate, without the need to purchase independent components, realizing "the substrate is the component", which greatly reduces the system cost;
3)所有的无源元件在基片内部实现，具有与矩形金属波导相类似的特性，与微带电路相比，Q值高，损耗低，辐射干扰小。3) All passive components are implemented inside the substrate, which has similar characteristics to rectangular metal waveguides. Compared with microstrip circuits, it has high Q value, low loss, and small radiation interference.
4)设计器件之间的隔离仓时，将金属压条放置在基片集成波导上方，与电路板表面紧密接触。避免了传统微带布版方式下，需要在金属压条上开口带来的信号泄露。改善了系统中各部件之间的隔离效果，达到60dB以上。4) When designing the isolation chamber between devices, place the metal bead above the integrated waveguide on the substrate and make close contact with the surface of the circuit board. It avoids the signal leakage caused by openings on the metal bead in the traditional microstrip layout method. The isolation effect between the various components in the system is improved, reaching more than 60dB.
附图说明 Description of drawings
图1是本发明的系统结构图。Fig. 1 is a system structure diagram of the present invention.
图2是基片集成波导天线结构图。Figure 2 is a structural diagram of the substrate integrated waveguide antenna.
图3是基片集成波导双工器结构图。Fig. 3 is a structural diagram of a substrate-integrated waveguide duplexer.
图4是低噪声放大器结构图。Figure 4 is a block diagram of a low noise amplifier.
图5是基片集成波导接收滤波器结构图。Fig. 5 is a structure diagram of a substrate integrated waveguide receiving filter.
图6是下变频器结构图。Figure 6 is a structural diagram of the down converter.
图7是基片集成波导本振功率分配器结构图。Fig. 7 is a structural diagram of a substrate-integrated waveguide local oscillator power divider.
图8是上变频器结构图。Fig. 8 is a structural diagram of an up-converter.
图9是基片集成波导发射滤波器结构图。Fig. 9 is a structure diagram of a substrate-integrated waveguide emission filter.
图10是功率放大器结构图。Fig. 10 is a structural diagram of a power amplifier.
图11是发射中频电路结构图。Figure 11 is a structural diagram of the transmitting intermediate frequency circuit.
图12是射频本振电路结构图。Fig. 12 is a structural diagram of a radio frequency local oscillator circuit.
图13是接收中频电路结构图。Figure 13 is a structural diagram of the receiving intermediate frequency circuit.
图14是器件之间的隔离图。Figure 14 is an isolation diagram between devices.
图15接收通道增益的控制特性测试图。Figure 15 is a control characteristic test diagram of the gain of the receiving channel.
图16发射通道的增益控制特性图。Figure 16 Gain control characteristic diagram of the transmit channel.
具体实施方式 Detailed ways
一种用于微波毫米波电路的X波段基片集成波导单板射频系统，包括介质基片I，在介质基片I上设有天线1、双工器2、射频接收低噪声放大器3、射频接收滤波器4、下变频器5、本振功分器6、上变频器7、射频发射滤波器8、发射功率放大器9、中频发射电路10、射频本振锁相环路11和中频接收电路12，双工器2的合成端与天线1的馈电端连接，双工器2的接收端口及发射端口分别与射频接收低噪声放大器3的输入端及发射功率放大器9的输出端连接，射频接收低噪声放大器3的输出端与射频接收滤波器4的输入端连接，射频接收滤波器4的输出端与下变频器5的射频端连接，下变频器5的本振端与本振功分器6的第二功率分配端连接，本振功分器6的第一功率分配端与上变频器7的本振端连接，上变频器7的射频端与射频发射滤波器8的输入端连接，射频发射滤波器8的输出端与发射功率放大器9的输入端连接，上述上变频器7的中频端及电源端分别与中频发射电路10的电源端及中频端连接，中频发射电路10上的另两个端口分别为发射I端和发射Q端，上述本振功分器6的功率输入端与射频本振锁相环路11的输出端连接，上述下变频器5的中频端及电源端分别与中频接收电路12的中频端及电源端连接，中频接收电路12上的另两个端口分别为接收I端和接收Q端，在上述射频接收低噪声放大器3、射频接收滤波器4、下变频器5、本振功分器6、上变频器7、射频发射滤波器8、发射功率放大器9、中频发射电路10、射频本振锁相环路11或中频接收电路12分别设有隔离金属框。隔离金属框压在介质基片I和基片集成波导上，隔离金属框可选择铝、铜、钢等金属框，如图14所示。An X-band substrate integrated waveguide single-board radio frequency system for microwave and millimeter wave circuits, including a dielectric substrate 1, on which an antenna 1, a
在天线与双工器之间直接采用基片集成波导连接，如图2所示；在双工器与射频低噪声放大器之间，以及双工器与功率放大器之间采用渐变微带线连接，如图3所示；在射频低噪声放大器与接收射频滤波器之间，接收射频滤波器与下变频器之间，上变频器与发射射频滤波器之间，发射射频滤波器与功率放大器之间，本振功率分配器与下变频器之间，本振功率分配器与上变频器之间，以及本振功率分配器与射频本振锁相环路之间采用共面波导结构连接，如图5与图9所示；The substrate integrated waveguide connection is directly used between the antenna and the duplexer, as shown in Figure 2; the tapered microstrip line is used between the duplexer and the RF low-noise amplifier, and between the duplexer and the power amplifier. As shown in Figure 3; between the RF low-noise amplifier and the receiving RF filter, between the receiving RF filter and the downconverter, between the upconverter and the transmitting RF filter, and between the transmitting RF filter and the power amplifier , between the LO power divider and the down-converter, between the LO power divider and the up-converter, and between the LO power divider and the RF LO phase-locked loop are connected by coplanar waveguide structures, as shown in the figure 5 and Figure 9;
本发明在X波段所实现了基片集成波导高集成度单板射频系统，采用厚度为0.5mm的介质基片，相对电介电常数为2.2。采用了16×15基片集成波导双馈天线；T型基片集成波导双工器；3腔基片集成波导收\发滤波器；T型基片集成波导功率分配器；两级低噪声放大器电路，采用Agilent pHEMT管实现；上下变频器采用Hittle混频器制作；射频本振采用Analog Device频综与Hittle压控振荡器实现；中频收\发电路采用Analog Device调制\解调芯片实现；The invention realizes a substrate-integrated waveguide high-integration single-board radio frequency system in the X-band, adopts a dielectric substrate with a thickness of 0.5mm, and has a relative permittivity of 2.2. 16×15 substrate integrated waveguide double-fed antenna; T-type substrate integrated waveguide duplexer; 3-cavity substrate integrated waveguide receiving/transmitting filter; T-type substrate integrated waveguide power divider; two-stage low-noise amplifier The circuit is realized by Agilent pHEMT tube; the upper and lower converters are made by Hittle mixer; the RF local oscillator is realized by Analog Device frequency synthesis and Hittle voltage-controlled oscillator; the intermediate frequency receiving/transmitting circuit is realized by Analog Device modulation/demodulation chip;
以下是测试结果：Here are the test results:
图15是接收通道的增益控制特性测试结果。测试中射频信号加载至低噪声放大器输入端，输出为I/Q信号。图中显示了I/Q信号功率随射频信号功率变化的特性，分别给出了中频衰减器全开(衰减量为-31dB)与全关(衰减量为0dB)时的曲线。综合考虑两条曲线，当接收信号范围为-75dBm～-10dBm时(输入1dB压缩点为-10dBm)，通过调整衰减量，可以保证I/Q信号功率在-10dBm～-9dBm。Figure 15 is the test result of the gain control characteristic of the receiving channel. During the test, the RF signal is loaded to the input terminal of the low noise amplifier, and the output is an I/Q signal. The figure shows the characteristics of the I/Q signal power changing with the RF signal power, and shows the curves when the IF attenuator is fully open (attenuation is -31dB) and fully closed (attenuation is 0dB). Considering the two curves comprehensively, when the received signal range is -75dBm～-10dBm (the input 1dB compression point is -10dBm), by adjusting the attenuation, the I/Q signal power can be guaranteed to be between -10dBm～-9dBm.
图16为发射通道的增益控制特性测试结果。测试中输入信号为基带I/Q信号，输出为射频信号。中频衰减器的衰减量在0dB～31dB之间变化时，发射机的输出功率范围为20～-13dBm dBm。在实际应用中，可根据链路状况适时调整发射功率。Figure 16 shows the test results of the gain control characteristics of the transmit channel. The input signal in the test is a baseband I/Q signal, and the output is a radio frequency signal. When the attenuation of the IF attenuator varies between 0dB and 31dB, the output power of the transmitter ranges from 20 to -13dBm dBm. In practical applications, the transmit power can be adjusted in good time according to the link conditions.
本发明将基片集成波导在基片内部实现，并充分利用了这一特性，将包括天线、双工器在内的射频无源元件采用基片集成波导技术实现，极大的提高了系统的集成度。其中：天线负责接收空间的射频信号通过双工器送至接收链路处理、同时将发射链路产生的信号辐射至空间；双工器将发射与接收信号分离，并提供对天线的统一接口；接收链路包括：射频低噪声放大器：负责接收放大微弱的射频信号；接收射频滤波器：负责镜像频率抑制；下变频器：将射频信号变换至中频；中频接收电路：将中频信号变换至基带电路可处理的I/Q信号；发射链路包括：中频发射电路：将基带电路I/Q信号变换至中频信号；上变频器：将中频信号变换至射频；发射频滤波器：负责滤出射频杂波；发射功率放大器：负责产生功率信号；射频本振电路：产生射频本振信号；本振功率分配与放大：将本振信号放大，并分配至收发射频链路。The invention implements the substrate integrated waveguide inside the substrate, and makes full use of this characteristic, and realizes the radio frequency passive components including the antenna and the duplexer using the substrate integrated waveguide technology, which greatly improves the system efficiency. Integration. Among them: the antenna is responsible for receiving the radio frequency signal in the space and sending it to the receiving link for processing through the duplexer, and at the same time radiating the signal generated by the transmitting link to the space; the duplexer separates the transmitting and receiving signals and provides a unified interface to the antenna; The receiving link includes: RF low-noise amplifier: responsible for receiving and amplifying weak RF signals; receiving RF filter: responsible for image frequency suppression; down-converter: converting RF signals to intermediate frequencies; intermediate frequency receiving circuit: converting intermediate frequency signals to baseband circuits Processable I/Q signal; the transmission link includes: IF transmission circuit: converts the I/Q signal of the baseband circuit to an IF signal; up-converter: converts the IF signal to a radio frequency; Wave; transmitting power amplifier: responsible for generating power signals; radio frequency local oscillator circuit: generating radio frequency local oscillator signals; local oscillator power distribution and amplification: amplifying local oscillator signals and distributing them to the transceiver radio frequency link.
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| CN113382462B (en) * | 2021-05-20 | 2023-03-21 | 深圳市星楷通讯设备有限公司 | Multi-closed-loop power control system and control method suitable for satellite communication |
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