CN100550444C - Be used to make the method and the thin-film semiconductor chip of thin-film semiconductor chip - Google Patents
Be used to make the method and the thin-film semiconductor chip of thin-film semiconductor chip Download PDFInfo
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- CN100550444C CN100550444C CNB2005800408823A CN200580040882A CN100550444C CN 100550444 C CN100550444 C CN 100550444C CN B2005800408823 A CNB2005800408823 A CN B2005800408823A CN 200580040882 A CN200580040882 A CN 200580040882A CN 100550444 C CN100550444 C CN 100550444C
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Abstract
Described two kinds of methods that are used to make based on the thin-film semiconductor chip of III/V compound semiconductor materials, wherein said thin-film semiconductor chip is suitable for producing electromagnetic radiation.According to first method, the active layer sequence (1) that will be suitable for producing electromagnetic radiation is applied on the growth substrates (2), and this active layer sequence (1) has towards the front (12) of growth substrates (2) and deviates from the back side (11) of growth substrates (2).In addition the part of at least one dielectric layer (3) as reflector sequence (51) is applied on the back side (11) of active layer sequence (1), and by laser energy is incorporated in the limited volumetric region (8) of the qualification of dielectric layer (3), makes the opening (4) that forms at least one back side (11) towards active layer sequence (1).Apply the other part of at least one metal level (5) subsequently as reflector sequence (51), make described opening (4) utilize metal material to be filled, and constitute the electrically conducting contact position, the back side (6) at least one back side (11) towards active layer sequence (1).Subsequently carrier (8) is applied on the reflector sequence (51), and removes growth substrates (2).According to second method, reflector sequence (51) is applied on the active layer sequence (1), and by laser energy is incorporated in the limited volumetric region (6) of the qualification of reflector sequence (51) subsequently, makes the electrically conducting contact position, the back side (6) that constitutes at least one back side (11) towards active layer sequence (1).
Description
Technical field
The present invention relates to a kind of method that is used to make thin-film semiconductor chip.
Background technology
Thin-film semiconductor chip is for example open by printed article EP 0 905 797 A2.In order to make this thin-film semiconductor chip, will be applied on the growth substrates based on the active layer sequence III/V compound semiconductor materials, that be suitable for launching electromagnetic radiation.Because absorb the part of the electromagnetic radiation that is produced by the active layer sequence mostly, so in order to improve light output the active layer sequence is separated with growth substrates and be applied on the other carrier with the growth substrates of III/V compound semiconductor materials coupling.Connection between active layer sequence and the carrier produces by bonding or welding.
The reflector sequence is between carrier and active layer sequence.This reflector sequence has following task, is about to the electromagnetic radiation guiding to the front of the emitted radiation of thin-film semiconductor chip, and therefore improves the radiation output of chip.Usually, the reflector sequence comprises at least one dielectric layer.
As for example described in printed article DE 10 2,004 004 780 A1, for electrically contacting of the back side of active layer sequence, dielectric layer is by photolithographic structuresization, makes forming opening in the dielectric layer at the back side of active layer sequence.With after-applied metal level, this metal level filling opening and being connected to each other makes the active layer sequence have the contact site at the back side, the connection each other in an electrically conductive of these contacts site.Metal level for example mainly comprises Au and at least a dopant material such as Zn.Annealing by metal level causes the infiltration of dopant material in the III/V compound semiconductor materials.Under the situation of suitably selecting dopant material, in the III/V compound semiconductor materials to the interface of metal level, therefore produce charge carrier more and more, this causes having basically the electric contact points of ohm property.
Also described a kind of method among these external printed article DE 10,046 170 A1, wherein produced the electrically conducting contact position of solar cell by passivation layer by laser.
Summary of the invention
Task of the present invention is, a kind of method for simplifying that is used to make the electrically conducting contact position of thin-film semiconductor chip and particularly active layer sequence is described.
This task solves by the method that the present invention is used to make based on the thin-film semiconductor chip of III/V compound semiconductor materials.
The disclosure of claim is included in the specification hereby clearly.
A kind of method that is used to make based on the thin-film semiconductor chip of III/V compound semiconductor materials, wherein said thin-film semiconductor chip is suitable for producing electromagnetic radiation, said method comprising the steps of:
-active layer the sequence that will be suitable for producing electromagnetic radiation is applied on the growth substrates, and described active layer sequence has towards the front of this growth substrates and deviates from the back side of this growth substrates,
-will be applied on the back side of active layer sequence as at least one dielectric layer of the part of reflector sequence,
-by laser energy is introduced in the defined limited volumetric region of dielectric layer, make in these volumetric regions, to constitute at least one opening towards the back side of active layer sequence,
-apply at least one metal level as the other part of reflector sequence, make and utilize metal material to fill described opening at least in part, and constitute at least one towards electrically conducting contact position, the back side at the back side of active layer sequence,
-carrier is applied on the sequence of reflector, and
-removal growth substrates.
Reflector sequence between active layer sequence and carrier comprises at least one dielectric layer and a metal level, and wherein dielectric layer for example comprises SiN
x, and metal level for example comprises Au and Zn.In addition, dielectric layer also can comprise and contains phosphosilicate glass, wherein this have contain phosphosilicate glass dielectric layer preferably by the other encapsulated layer encapsulation that for example comprises silicon nitride arrive phosphorous silicate glass layer and form phosphoric acid so that as much as possible prevent moisture.This reflection series of strata that are used for being applied on the III/V compound semiconductor materials for example are described at application DE 10 2,004,040 277.9, and the disclosure of this application is just adopted in this point hereby by reference.
Because the reflector sequence comprises at least one dielectric layer, so electrically contact for the back side of active layer sequence and must construct the contact site that at least one passes the reflector sequence towards the back side of active layer sequence.
According to the present invention, be implemented in opening in the dielectric layer by laser towards the back side of active layer sequence, wherein in described opening, construct the electrically conducting contact position subsequently.This provides following advantage, and promptly time-consuming usually and photoetching process that cost is high can be reduced when making thin-film semiconductor chip.In addition, advantageously can realize having the contact site of very little cross section in the method,, utilize laser can realize littler structuring because compare with utilizing photoetching method.
The reflection series of strata can also comprise other layer except dielectric layer and metal level.At this for example can be to be used to encapsulate the layer of dielectric layer or metal level or to be used for increasing attached layer between each layer of reflector sequence.Usually, can also pass these layers realization opening by laser, and be formed in these openings towards the back side of active layer sequence electric contact points.
In a kind of preferred form of implementation of this method, contact site, the back side is annealed in step subsequently.By the annealing of electrically conducting contact position, atom can penetrate into from the metal material of contact site in the III/V compound semiconductor materials at the back side.When under the situation of the III/V compound semiconductor materials of considering the back side, suitably selecting metal material, therefore can make the electrically conducting contact position that has ohm property basically towards the III/V at back side compound semiconductor materials.
Particularly preferably, anneal by laser in electrically conducting contact position in the back side.
By laser, energy on purpose only can be introduced in the limited volumetric region of thin-film semiconductor chip.Especially, the energy in the zone of conduction contact can be introduced in the zone at interface of III/V compound semiconductor materials partly.A kind ofly be used for carrying out the surface-treated method by laser and be described at printed article DE 10141352.1, the disclosure of this printed article is just adopted in this point hereby by reference.The advantage that this form of implementation of this method provides is, locally in order to construct the electric contact points that has ohm property basically only some zones of chip placed under the temperature of rising greatly limitedly, and this is necessary in these zones.
In this way, advantageously prevent: when annealing, other zone of semiconductor chip also is placed under the temperature of rising, and therefore metallic atom also is diffused in its unwelcome zone.
If the metal level of reflector sequence comprises for example different kinds of metals, wherein a kind of metal has than the worse reflection characteristic of additional metals, and owing to different diffusion properties separates, the metallic atom that then has worse reflection characteristic can accumulate and therefore reduce the reflectivity of reflector sequence to these two kinds of metals partly in annealing process.As its example, consider the reflector sequence on the III/V compound semiconductor materials that p mixes, this reflector sequence comprises dielectric layer and metal level, wherein metal level comprises Au and Zn.Au has the extraordinary reflectivity to electromagnetic radiation in the red color spectrum range of visible light.And Zn is suitable for the time being diffused in the III/V compound semiconductor that p mixes in annealing well, and gives the electrically conducting contact position thus and as much as possible be the characteristic of ohm.If the zone of reflector sequence is placed under the temperature of rising now, then the Zn atom also can be to the interfacial migration to dielectric layer.Because particularly have the reflectivity of reduction with respect to Au, reduce the quality of reflector sequence thus at ruddiness for Zn the electromagnetic radiation with the wavelength in the red color range of visible light.
In addition, metallic atom also can be spread in the active layer sequence in non local annealing process.There, these atoms are impurity center normally, and these impurity centers are carried the non-radiating compound of photon, and therefore reduce the efficient of thin-film semiconductor chip.For fear of this point, be usually located on the active layer sequence by means of the enough thick layer of passive III/V compound semiconductor materials.If contact utilizes laser to anneal according to the present invention partly, then can reduce the thickness of this passive III/V compound semiconductor materials and can advantageously reduce the thickness of thin-film semiconductor chip thus.
The method of thin-film semiconductor chip that is suitable for producing electromagnetic radiation that another kind is used to make based on the III/V compound semiconductor materials particularly may further comprise the steps:
-active layer the sequence that will be suitable for producing electromagnetic radiation is applied on the growth substrates, and described active layer sequence has towards the front of growth substrates and deviates from the back side of growth substrates,
-structure reflector sequence on the back side of active layer sequence, this reflector sequence has at least one metal level and at least one dielectric layer,
-by laser energy is introduced at least one defined limited volumetric region of reflector sequence, make in the limited volumetric region of this definition, to constitute at least one towards electrically conducting contact position, the back side at the back side of active layer sequence,
-carrier is applied on the sequence of reflector, and
-removal growth substrates.
In the method, different with foregoing method, apply in succession the reflector sequence the layer and by laser energy is introduced in the limited volumetric region of reflector sequence subsequently.LASER HEATING dielectric layer and metal level make dielectric layer decompose or fusing or decomposition and fusing.Therefore the material of the local melting of metal level can form the electrically conducting contact position towards the back side of active layer sequence.
This method provides the advantage identical with foregoing method.In addition, this method provides following advantage, be that the contact site needn't be annealed usually because energy is partly to being introduced at the interface of III/V compound semiconductor materials, and therefore in the structure contact site metallic atom can be spread in the III/V compound semiconductor materials.
Also have the another kind of method of thin-film semiconductor chip that is suitable for producing electromagnetic radiation that is used to make based on the III/V compound semiconductor materials may further comprise the steps:
-active layer the sequence that will be suitable for producing electromagnetic radiation is applied on the growth substrates, and described active layer sequence has towards the front of growth substrates and deviates from the back side of growth substrates,
-applying at least one metallic reflector, this metallic reflector constitutes towards the electrically conducting contact position, the back side at the back side of active layer sequence,
-by laser annealed in electrically conducting contact position, the back side,
-carrier is applied on the sequence of reflector, and
-removal growth substrates.
With different, in the method, between the back side to be contacted of active layer sequence and reflector, do not settle dielectric layer according to foregoing two kinds of methods.Yet what can imagine is, layer in addition, increases attached layer between the back side of metal level and active layer sequence such as being used to.Back side electric contact points is annealed by laser according to the present invention, so that obtain to have basically the contact site of ohm property.The advantage that this method provides is can avoid whole semiconductor chip is applied annealing and the particularly annealing of active layer sequence that is used for back side contact.
In the preferred form of implementation of all three kinds of methods, the texturizing layer sequence is applied on the front of active layer sequence, this texturizing layer sequence comprises at least one dielectric layer.At least in part at least one metal level is applied on the texturizing layer sequence subsequently, and by laser energy is incorporated in the limited volumetric region of definition of texturizing layer sequence and metal level, makes to constitute at least one towards electrically conducting contact position, the front in the front of active layer sequence.
The texturizing layer sequence for example can comprise dielectric layer, and this dielectric layer comprises glass and like this by structuring, makes the coupling that improves the electromagnetic radiation on the front of thin-film semiconductor chip export.In addition, the texturizing layer sequence can be additionally or only have the protection and deactivation function.
With to construct contact site, the back side according to the front by the reflector sequence that comprises dielectric layer similar, construct contact site, front towards the front of active layer sequence by the texturizing layer sequence that comprises at least one dielectric layer.In the limited volumetric region of the definition by energy being introduced metal level and texturizing layer sequence by laser, dielectric layer is decomposed partly or melt or decompose and melt, and the material production of the local melting of metal level is towards the electrically conducting contact position in the front of active layer sequence.Constructing the contact site, front by laser provides and the identical advantage of advantage by the contact of the laser structure back side time described above.
In addition, traditional annealing process of the annealing that is used for positive contact (wherein be not only semiconductor chip definition limited volumetric region but for example entire chip be placed under the temperature of rising) produce following problem, promptly the thermal endurance of the grafting material between active layer sequence and the carrier limits the temperature that is used to anneal.Therefore in traditional non-local annealing process, contact worth desired temperatures with formation and compare, chip is applied in lower temperature usually.When contact needn't be annealed afterwards, this problem can advantageously be avoided.
If dielectric layer for example is positioned on the front of active layer sequence as the part of texturizing layer sequence, then can constitute the contact site, front that passes the texturizing layer sequence in the following manner in addition, promptly realize that by laser at least one passes through the opening of texturizing layer sequence.As in according to the method for claim 1, subsequently metal level is applied on this texturizing layer sequence, therefore this metal level utilizes metal material to come filling opening and produces electrically conducting contact position towards the front of active layer sequence.
In addition, also can at first at least one electrically conducting contact position be applied on the front of active layer sequence in two kinds of methods, anneal by laser subsequently in this electrically conducting contact position.In this form of implementation, also can advantageously avoid entire chip is applied the temperature of the annealing that is used for the contact site.
It must be noted that at this method that is used to make positive contact described above can be independent of the manufacture method of remaining thin-film semiconductor chip and be employed.
All three kinds of methods all are particularly suitable for making thin-film semiconductor chip.
The characteristic of thin-film semiconductor chip particularly is following feature:
-on first interarea of carrier element, apply or construct reflector or sequence of layer, this epitaxial loayer sequence of at least a portion reflected back of the electromagnetic radiation that this layer or sequence of layer will be produced in the epitaxial loayer sequence that produces radiation in the extension sequence of layer; And
-this epitaxial loayer sequence has in 20 μ m or littler scope, the thickness in 10 mu m ranges particularly.
Preferably, this epitaxial loayer sequence comprises at least one semiconductor layer, this semiconductor layer has at least one face, this mask has mixing (Durchmischung) structure, this structure causes the approximate ergodic of light in the epitaxial loayer sequence of extension to distribute in the ideal case, and also promptly this structure optimization ground has ergodic scattering properties at random as far as possible.
The printed article Appl.Phys.Lett.63 (16) that the people showed such as I.Schnitzer that the basic principle of thin-film light emitting diode chip is for example published on October 18th, 1993, be described among the 2174-2176, its disclosure is just adopted in this point hereby by reference.
Usually, comprise the III/V compound semiconductor materials that p mixes in the thin-film light emitting diode chip zone overleaf, and in the zone in front, comprise the III/V compound semiconductor materials that n mixes.But it is contemplated that opposite order equally.
If the bread that is applied in the contact site of active layer sequence contains phosphide-III/V compound semiconductor materials that p mixes, then the contact site preferably includes at least a among elements A u and the Zn.
Preferably, phosphide-III/V compound semiconductor materials is Al
nGa
mIn
1-n-mP, 0≤n≤1,0≤m≤1 and n+m≤1 wherein, and be independent of doping.At this, this material might not have according to forming accurately on the mathematics of above-mentioned formula.Or rather, this material can have and not change Al basically
nGa
mIn
1-n-mOne or more dopant materials of the distinctive physical characteristic of P material and additional part.Yet for for simplicity, top formula only comprise lattice chief component (Al, Ga, In, P), even these chief components can partly substitute with a spot of other material.
Au is a kind of material that electromagnetic radiation with the wavelength in the red color range of visible light is had good reflection characteristic.Zn is diffused in phosphide-III/V compound semiconductor materials that p mixes and preferably occupies the lattice position of the heavy lattice of III family there under the situation that produces the hole when annealing in the contact site.In this way, improve the number of charge carrier (hole), this causes the characteristic of the improvement of electric contact points usually.
If the bread that is applied in the contact site of active layer sequence contains phosphide-III/V compound semiconductor materials that n mixes, this contact site at least a among containing element Au and the Ge preferably then.
In this case, Au also preferably is used as the material that is used for the contact site owing to its good reflection characteristic.Ge preferably occupies the lattice position of the heavy lattice of III family equally when contact is annealed, yet as IV family element, carries an electronics than the atom of the heavy lattice of III family more, and improve the number of the electronics in this zone thus.
If the bread that is applied in the contact site of active layer sequence contains nitride-III/V compound semiconductor materials that p mixes, this contact site at least a among containing element Pt, Rh, Ni, Au, Ru, Pd, Re and the Ir preferably then.
Preferably, this nitride-III/V compound semiconductor materials is Al
nGa
mIn
1-n-mN, 0≤n≤1,0≤m≤1 and n+m≤1 wherein, and be independent of doping.At this, this material might not have according to forming accurately on the mathematics of above-mentioned formula.Or rather, this material can have and not change Al basically
nGa
mIn
1-n-mOne or more dopant materials of the distinctive physical characteristic of N material and additional part.Yet for for simplicity, top formula only comprise lattice chief component (Al, Ga, In, N), even these chief components can partly substitute with a spot of other material.
If the bread that is applied in the contact site of active layer sequence contains nitride-III/V compound semiconductor materials that n mixes, this contact site at least a among containing element Ti, Al and the W preferably then.
If the bread that is applied in the contact site of active layer sequence contains phosphide-III/V compound semiconductor materials, then this face can except or alternative phosphide-III/V compound semiconductor materials comprise arsenide-III/V compound semiconductor materials in addition.The material that preferably is used to the contact site according to doping does not depart from above-mentioned material in the case usually.
If the bread nitrogenate-III/V compound semiconductor materials that is applied in the contact site of active layer sequence, then this face can comprise arsenide-III/V compound semiconductor materials in addition except nitride-III/V compound semiconductor materials equally.In this case, the material that preferably is used to the contact site according to doping does not depart from above-mentioned material usually yet.
Preferably, arsenide-III/V compound semiconductor materials is Al
nGa
mIn
1-n-mAs, 0≤n≤1,0≤m≤1 and n+m≤1 wherein, and be opposed to doping.At this, this material might not have according to forming accurately on the mathematics of above-mentioned formula.Or rather, this material can have and not change Al basically
nGa
mIn
1-n-mOne or more dopant materials of the distinctive physical characteristic of As material and additional part.Yet for for simplicity, top formula only comprise lattice chief component (Al, Ga, In, As), even these chief components can partly substitute with a spot of other material.
Description of drawings
Additional advantage and preferred form of implementation are from obtaining in conjunction with described two embodiment of Fig. 1 a to 1f, 2a to 2b, 3a to 3b, 4a to 4c and 5a to 5d subsequently.
Fig. 1 a to 1f illustrates the schematic diagram according to the distinct methods stage of first embodiment of one of described method,
Fig. 2 a to 2b illustrates the schematic diagram according to other method stage of first embodiment of one of described method,
Fig. 3 a to 3b illustrates the schematic diagram according to two method stages of second embodiment of one of described method,
Fig. 4 a to 4c illustrates the schematic diagram according to other method stage of second embodiment of one of described method, and
Fig. 5 a to 5d illustrates the schematic diagram according to other method stage of the 3rd embodiment of one of described method.
Embodiment
In embodiment and Tu, part identical or that play same function is equipped with identical reference symbol respectively.The shown element of described figure, the particularly thickness of layer should not be considered to be by correct proportions in principle, and or rather, they can part be illustrated large in order better to understand.
In embodiment according to Fig. 1 a to 1f, in order to make film LED chip, will based on active layer sequence 1 extension of III/V compound semiconductor materials be applied on the growth substrates 2.The face of the sensing growth substrates 2 of active layer sequence 1 is called as front 12, and the face relative with positive 12 of active layer sequence 1 is called as the back side 11.Active layer sequence 1 is suitable for launching electromagnetic radiation, and for example has the pn knot that produces radiation or produce the single quantum (Topfstruktur) or the multi-quantum pit structure of radiation.These structures are known to those skilled in the art and therefore further do not set forth.Active layer sequence 1 for example comprises AlGaInP or GaInN, and wherein the front 12 of active layer sequence 1 is that n mixes and the back side 11 is that p mixes.If should make active layer sequence 1 epitaxial growth, then can use for example GaN, SiC or sapphire as the material that is used for growth substrates 2 based on nitride-III/V compound semiconductor materials.Be used to make active layer sequence 1 epitaxially grown suitable growth substrates 2 for example to comprise GaAs based on phosphide-III/V compound semiconductor.
Dielectric layer 3 is applied on the active layer sequence 1 subsequently, and this dielectric layer for example comprises SiN
xIn dielectric layer 3, produce point-like opening 4 by laser, make the back side 11 of active layer sequence 1 in these openings 4, expose.These openings 4 have the diameter of 1 μ m to 20 μ m usually, make to form the contact site 6 with this big or small diameter in processing step subsequently.
In other step, metal level 5 for example is applied on the dielectric layer 3 by vaporization or sputter subsequently.Dielectric layer 3 and metal level 5 together form reflector sequence 51.For the back side 11 of active layer sequence 1 comprise phosphide-III/V compound semiconductor materials that p mixes, such as the situation of AlGaInP, metal level 5 preferably comprises gold and Zn.And if the back side 11 of active layer sequence 1 for example comprises nitride-III/V compound semiconductor that p mixes, such as GaInN, then metal level 5 preferably comprises Pt, Rh, Ni, Au, Ru, Pd, Re or Ir.
When applying metal material, opening 4 is filled and utilizes each other metal material to be connected, the feasible electrically conducting contact position 6 that is constituted to the back side 11 of active layer sequence 1, the connection each other in an electrically conductive of these contacts site.
In order to obtain to have is the contact site 6 of the characteristic of ohm as much as possible, and contact site 6 is annealed subsequently.For this reason, for example entire chip can be introduced in the stove, and this stove is in 450 ℃ the ambient temperature this chip.Yet preferably, contact site 6 utilizes laser to anneal partly.Electric contact points 6 is described in printed article DE 101413521 by the annealing of laser, and its disclosure is just adopted in this point hereby by reference.
If the back side or positive contact site 6 comprise different metal materials, then also can apply a plurality of layers that comprise the corresponding metal material.Preferably, in this case, bed thickness is extremely thin.After the back side of active layer sequence 1 electrically contacts, for example by welding or bonding carrier 7 is applied on the metal level 5.In step subsequently, growth substrates 2 is removed.
For electrically contacting of the front of active layer sequence 1, will be applied on the front 12 of active layer sequence 1 by the electrically conducting contact position 6 that metal material constitutes equally.If the front 12 of active layer sequence 1 comprises phosphide-III/V compound semiconductor materials that n mixes, such as AlGaInP, then metal material mainly comprises Au and Ge.For positive 12 comprise nitride-III/V compound semiconductor that n mixes, such as the situation of GaInN, metal material preferably comprises Ti, Al or W.The same with the contact site 6 at the back side, positive contact site 6 equally particularly preferably utilizes laser also to be annealed.
In another embodiment according to the method for Fig. 3 a, 3b and 4a to 4c, the contact for the back side of active layer sequence 1 after being applied to dielectric layer 3 on the active layer sequence 1, is applied to metal level 5 on the dielectric layer 3.In step subsequently, utilize laser that the dotted region 8 of dielectric layer 3 and metal level 5 is heated.In this way, the material of dielectric layer 3 decomposes at least in part or evaporates, and the material of metal level 5 melts the feasible electrically conducting contact position 6 that has ohm property basically that is constituted to the back side 11 of active layer sequence 1 in this zone 8.As according to first embodiment, on metal level 5, apply carrier 7 now and growth substrates 2 is removed.
If one or more dielectric layer 3 is positioned on the front 12 of active layer sequence 1 as the part of modified (verg ü tend) sequence of layer 52; then to the electrically conducting contact position 6 in the front 12 of active layer sequence 1 preferably as according to the contact site, the back side 6 of second embodiment, being applied in, wherein said texturizing layer sequence for example is used to protect active layer sequence 1 or improves coupling output from the electromagnetic radiation of chip.In addition, metal level 5 is applied to again on the dielectric layer 3, and energy is introduced in the dotted region 8 of one or more dielectric layer 3 and metal level 5 by laser.In this way, the material of dielectric layer 3 decomposes again at least in part, and the material of metal level 5 melts the feasible electrically conducting contact position 6 that has ohm property basically that is constituted to the front 12 of active layer sequence 1 in this zone 8.
As in according to the embodiment of Fig. 1 a to 1d, in the embodiment according to Fig. 5 a to 5d, active layer sequence 1 also is applied on the growth substrates 2, and this active layer sequence 1 is suitable for launching electromagnetic radiation (referring to Fig. 5 a).Different with embodiment described above, and then the metallic reflector 5 that will for example be made of Ag is applied on the back side 11 of active layer sequence 1, and this metallic reflector is not to separate with active layer sequence 1 by dielectric layer 3.In this case, metal level 5 is the electric contact points 6 to the back side 11 of active layer sequence 1.
But between the back side 11 of metal level 5 and active layer sequence 1, can arrange other layer, for example be used to increase attached (Haftvermittlung).It is this that to increase attached layer extremely thin usually and have only a few nanometer.
For between the back side 11 that obtains metal level 5 and active layer sequence 1 electrically contact 6 as much as possible for ohm characteristic, metal level 5 is annealed by laser, as schematically showing among Fig. 5 b.
In step subsequently, such as described above, for example by knitting layer 9 immobilization carriers 7, this knitting layer comprises adhesive or scolder (referring to Fig. 5 c) on the back side 11 of active layer sequence 1.Subsequently, remove growth substrates 2 and be applied to active layer sequence 1 front 12 electrically contact 6.This positive electric contact points 6 can be for example as being applied in according to Fig. 2 a and 2b or the described embodiment of Fig. 4 a to 4c.
Present patent application requires the priority of German patent application 10 2,004 047392.7 and 10 2004061865.8, and the disclosure of these German patent applications is adopted hereby by reference.
Naturally should not be regarded as the present invention by embodiment to the description of this method and be confined to these embodiment.The present invention especially comprises each combination of each new feature and feature, and this particularly comprises each combination of the feature in the claim, even these combinations are not illustrated clearly in the claims.
Claims (16)
1. method of thin-film semiconductor chip that is suitable for producing electromagnetic radiation that is used to make based on the III/V compound semiconductor materials has following steps:
-active layer the sequence (1) that will be suitable for producing electromagnetic radiation is applied on the growth substrates (2), and described active layer sequence (1) has towards the front (12) of described growth substrates (2) and deviates from the back side (11) of described growth substrates (2),
-part of at least one dielectric layer (3) as reflector sequence (51) is applied on the back side (11) of described active layer sequence (1),
-by laser energy is incorporated in the defined limited volumetric region (8) of described dielectric layer (3), make in these volumetric regions, to constitute at least one opening (4) towards the back side (11) of described active layer sequence (1),
-apply the other part of at least one metal level (5) as described reflector sequence (51), make described opening (4) utilize metal material to be filled at least in part, and constitute at least one electrically conducting contact position, the back side (6) towards the back side (11) of described active layer sequence (1)
-carrier (7) is applied on the described reflector sequence (51), and
-remove described growth substrates (2).
2. according to the process of claim 1 wherein annealed in electrically conducting contact position, the described back side (6).
3. according to the method for claim 2, wherein annealed in electrically conducting contact position, the described back side (6) by laser.
4. method of thin-film semiconductor chip that is suitable for producing electromagnetic radiation that is used to make based on the III/V compound semiconductor materials has following steps:
-active layer the sequence (1) that will be suitable for producing electromagnetic radiation is applied on the growth substrates (2), and described active layer sequence (1) has towards the front (12) of described growth substrates (2) and deviates from the back side (11) of described growth substrates (2),
-going up structure reflector sequence (51) at the back side (11) of described active layer sequence (1), this reflector sequence comprises at least one metal level (5) and at least one dielectric layer (3),
-energy is incorporated at least one defined limited volumetric region (8) of described reflector sequence (51) by laser, make and in the limited volumetric region (8) of this definition, constitute at least one electrically conducting contact position, the back side (6) towards the back side (11) of described active layer sequence (1)
-carrier (7) is applied on the described reflector sequence (51), and
-remove described growth substrates (2).
5. method of thin-film semiconductor chip that is suitable for producing electromagnetic radiation that is used to make based on the III/V compound semiconductor materials has following steps:
-active layer the sequence (1) that will be suitable for producing electromagnetic radiation is applied on the growth substrates (2), and described active layer sequence (1) has towards the front (12) of described growth substrates (2) and deviates from the back side (11) of described growth substrates (2),
-applying at least one metallic reflector (5), this metallic reflector constitutes towards the electrically conducting contact position, the back side (6) at the back side (11) of described active layer sequence (1),
-by laser annealed in electrically conducting contact position, the described back side (6),
-carrier (7) is applied on the metallic reflector (5), and
-remove described growth substrates (2).
6. according to the method for one of claim 1 to 5, wherein:
-on the front (12) of described active layer sequence (1), applying texturizing layer sequence (52), this texturizing layer sequence comprises at least one dielectric layer (3),
-at least in part at least one metal level (5) is applied on the described texturizing layer sequence (52), and
-energy is incorporated in the horizontal defined limited volumetric region (8) of described texturizing layer sequence (52) and described metal level (5) by laser, make to constitute at least one electrically conducting contact position, front (6) towards the front (12) of described active layer sequence (1).
7. according to the method for one of claim 1 to 5, wherein:
-on the front (12) of described active layer sequence (1), apply at least one electrically conducting contact position, front (6), and
-by laser annealed in electrically conducting contact position, described front (6).
8. according to the method for one of claim 1 to 5, wherein:
The back side (11) that is applied in electrically conducting contact position, the described back side (6) of-described active layer sequence (1) comprises the phosphide-III/V compound semiconductor materials of p doping and/or arsenide-III/V compound semiconductor materials that p mixes, and
At least a among-electrically conducting contact position, the described back side (6) containing element Au and the Zn.
9. according to the method for one of claim 1 to 5, wherein:
The back side (11) that is applied in electrically conducting contact position, the described back side (6) of-described active layer sequence (1) comprises the phosphide-III/V compound semiconductor materials of n doping and/or arsenide-III/V compound semiconductor materials that n mixes, and
At least a among-electrically conducting contact position, the described back side (6) containing element Au and the Ge.
10. according to the method for one of claim 1 to 5, wherein:
The back side (11) that is applied in electrically conducting contact position, the described back side (6) of-described active layer sequence (1) comprises nitride-III/V compound semiconductor materials that p mixes, and
At least a among-electrically conducting contact position, the described back side (6) containing element Pt, Rh, Ni, Au, Ru, Pd, Re and the Ir.
11. according to the method for one of claim 1 to 5, wherein:
The back side (11) that is applied in electrically conducting contact position, the described back side (6) of-described active layer sequence (1) comprises nitride-III/V compound semiconductor materials that n mixes, and
At least a among-electrically conducting contact position, the described back side (6) containing element Ti, Al and the W.
12. according to the method for claim 6, wherein:
The front (12) that is applied in electrically conducting contact position, described front (6) of-described active layer sequence (1) comprises the phosphide-III/V compound semiconductor materials of p doping and/or arsenide-III/V compound semiconductor materials that p mixes, and
At least a among-electrically conducting contact position, described front (6) containing element Au and the Zn.
13. according to the method for claim 6, wherein:
The front (12) that is applied in electrically conducting contact position, described front (6) of-described active layer sequence (1) comprises the phosphide-III/V compound semiconductor materials of n doping and/or arsenide-III/V compound semiconductor materials that n mixes, and
At least a among-electrically conducting contact position, described front (6) containing element Au and the Ge.
14. according to the method for claim 6, wherein:
The front (12) that is applied in electrically conducting contact position, described front (6) of-described active layer sequence (1) comprises nitride-III/V compound semiconductor materials that p mixes, and
At least a among-electrically conducting contact position, described front (6) containing element Pt, Rh, Ni, Au, Ru, Pd, Re and the Ir.
15. according to the method for claim 6, wherein:
The front (12) that is applied in electrically conducting contact position, described front (6) of-described active layer sequence (1) comprises nitride-III/V compound semiconductor materials that n mixes, and
At least a among-electrically conducting contact position, described front (6) containing element Ti, Al and the W.
16. a thin-film semiconductor chip, this thin-film semiconductor chip is made according to the method according to one of claim 1 to 5.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102004047392.7 | 2004-09-29 | ||
| DE102004047392 | 2004-09-29 | ||
| DE102004061865.8 | 2004-12-22 |
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| CN101065852A CN101065852A (en) | 2007-10-31 |
| CN100550444C true CN100550444C (en) | 2009-10-14 |
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| DE102008035900A1 (en) * | 2008-04-30 | 2009-11-05 | Osram Opto Semiconductors Gmbh | LED chip |
| US8981534B2 (en) * | 2012-09-14 | 2015-03-17 | Tsmc Solid State Lighting Ltd. | Pre-cutting a back side of a silicon substrate for growing better III-V group compound layer on a front side of the substrate |
| DE102012111358A1 (en) * | 2012-11-23 | 2014-05-28 | Osram Opto Semiconductors Gmbh | Method for separating a composite into semiconductor chips and semiconductor chip |
| DE102017104742A1 (en) * | 2017-03-07 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| DE102018005010A1 (en) * | 2017-07-13 | 2019-01-17 | Wika Alexander Wiegand Se & Co. Kg | Transfer and melting of layers |
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