CN100549792C - Silicon-based liquid crystal display device with color pixel array and manufacturing method thereof - Google Patents

Abstract

The present invention provides a method for manufacturing a silicon-based liquid crystal display device with a color pixel array, which is to set a reflective layer between different color filter layers and use the reflective layer as an etching stop layer between the color filter layers, and use an etching process to define different color filter layer patterns in each sub-pixel.

Description

Liquid crystal on silicon display device with color pixel array and manufacturing method thereof

technical field

The invention relates to a color liquid crystal on silicon (LCoS) display device, in particular to a reflective color LCoS display device.

Background technique

LCoS display device is the key technology of reflective LCD projector (reflective LCoS projector) and rear-projection television (rear-projection television). The biggest advantage of the LCoS display device is that it can greatly reduce the production cost of the panel, and the volume is light, thin, short, and small, and it also has the advantages of high resolution and low power. The difference between LCoS display device and general thin film transistor-liquid crystal display (TFT-LCD) is that the upper and lower sides of TFT-LCD are made of glass as the substrate, but the LCoS display panel only uses glass on the upper side. , the underlying substrate is mainly made of semiconductor materials (such as silicon). Therefore, the technology of LCoS display panels is actually a technology that combines traditional liquid crystal display and semiconductor complementary metal-oxide semiconductor (CMOS) technology.

The main structure of the LCoS display device can be divided into a light source module, an LCoS display panel, a light splitting and combining system, and the like. Generally speaking, LCoS displays can be classified into three-panel and single-panel according to the design of the optical engine. The three-chip optical engine divides the light beam generated by the light source into red, blue, and green light through a beam splitter, and then projects the light beams into three LCoS panels, and finally combines the projected three-color images through the light combining system , to form a color image. The single-chip optical engine uses a color wheel to form white light into red, blue, and green lights in sequence, and combines the optical three primary colors with the red, blue, and green images generated by the driver to form a color separation image synchronously. Then, through the characteristics of the persistence of vision of the human eye, a colorful projection screen is finally generated in the human brain.

It can be seen from the above that it is known that color pixel arrays with different color color filter layers are rarely produced on LCoS display panels. The reason is that the production of micro color filters using inorganic dichroic films is technically difficult and costly. Bottleneck, so the traditional single LCoS display panel cannot split natural light or white light into optical three primary colors of green, red, blue or other color light to produce color images, but must rely on the aforementioned color wheel or light splitting and combining system with multiple chips The LCoS display panel can display a color picture. Therefore, the known LCoS display device must include multiple LCoS display panels and a complex optical engine, which greatly increases the production cost and cannot meet the market demand for product size reduction.

U.S. Patent No. 4,534,620 proposed by Gale et al. once mentioned the use of yellow, green or turquoise dichroic film stacks to make a transmissive color-coded color filter layer, but due to the etching selectivity ratio of different color dichroic films Low, so complex processes must be used, such as dry etching and wet etching processes at the same time, and with specific wet-etching-resistant color separation film surface materials, in order to produce a specific shape of yellow, cyan or turquoise color separation film stack structure. In addition, Iisaka proposed U.S. Patent No. 7,121,669, disclosing the fabrication of a color pixel array on a liquid crystal display device by depositing a first layer of color filters on a transparent substrate such as glass or quartz. After performing etching to define the pattern, a thicker transparent interlayer (transmissive interlayer) is formed on it, and then a second layer of color filter is formed on the transparent interlayer. A second layer of color filters is then etched, and another thick transparent interlayer is formed on top of it. The process is repeated several times, and a color filter layer structure comprising at least three layers of color filters plus a thickness of three layers of transparent interlayers is produced on the transparent substrate. Therefore, the process taught by Iisaka is complicated, resulting in increased manufacturing cost, and the total thickness of the color filter layer structure is relatively thick, which cannot meet the requirement of reducing the size of the display device.

From the above, it can be known that the industry still lacks the advanced technology of producing multi-color micro-color filters on the semiconductor substrate with a simple process. Therefore, the technology of producing a color pixel array on a single LCoS display device is still a subject of constant discussion in the industry.

Contents of the invention

The main purpose of the present invention is to provide an LCoS display device with a color pixel array and a manufacturing method thereof, so as to improve the problem that the known LCoS display device requires complex optical engines and multiple LCoS display panels.

According to the present invention, a method for manufacturing an LCoS display device with a color pixel array is disclosed. Firstly, a semiconductor substrate is provided, and then a first reflection layer, a first color filter layer, a second reflection layer and a second color filter layer are sequentially formed on the semiconductor substrate. A first pattern layer is formed on the second color filter layer, which has a first image exposure area. Then remove the part of the second color filter layer and the second reflective layer exposed by the first pattern layer to form a first opening. Then the first pattern layer is removed, and a first planar layer is formed in the first opening to planarize the surface of the semiconductor base.

According to the present invention, another method for manufacturing an LCoS display device is provided. First, a semiconductor substrate is provided, and then a first reflective layer, a first color filter layer, a second reflective layer, and a semiconductor substrate are sequentially formed on the semiconductor substrate. The second color filter layer, a third reflection layer and a third color filter layer. Then, a first pattern layer is formed on the third color filter layer, which includes a first exposure area, and then a first etching process is performed to remove a part of the third color filter exposed by the first pattern layer layer and the third reflective layer, and form a first opening in the third color filter layer. Next, a second pattern layer including a second image exposure area is formed on the third color filter layer. Then a second etching process is performed to remove part of the third color filter layer and the third reflective layer exposed by the second pattern layer to form a second opening. Finally, a first flat layer is formed in the first opening or the second opening.

According to the present invention, another LCoS display device is disclosed, which includes: a semiconductor substrate, a plurality of sub-pixels are defined on its surface to form a color pixel array; a first reflective layer, a first color filter layer, A second reflective layer, a second color filter layer, a third reflective layer and a third color filter layer are sequentially arranged on the semiconductor substrate. The second color filter layer and the second reflective layer have a first opening corresponding to a first pixel on the semiconductor substrate, and the third color filter layer and the third reflective layer have a second The notch opening corresponds to the first sub-pixel and a second sub-pixel on the semiconductor substrate.

Since the present invention sets a reflective layer between the color filter layers and uses the reflective layer as an etching stop layer between the color filter layers, different color filter layers can be defined in each sub-pixel by using the etching process. The optical layer pattern is used to produce the color pixel array on the LCoS display panel with a simple process.

Description of drawings

1 to 7 are schematic diagrams of a first embodiment of the manufacturing method of an LCoS display device with a color pixel array according to the present invention;

8 to 13 are schematic diagrams of a second embodiment of the method for manufacturing an LCoS display device with a color pixel array according to the present invention;

14 to 18 are process schematic diagrams of the third example of the LCoS display panel of the present invention;

19 to 22 are process schematic diagrams of the fourth example of the LCoS display panel of the present invention.

Description of main component symbols

10 Semiconductor substrate 12 First reflection layer

14 The first dichroic film 16 The first buffer layer

18 Second reflective layer 20 Second dichroic film

22 Second buffer layer 24 First pattern layer

26 First exposure image area 28 First opening

30 The first flat layer 32 The third reflective layer

34 The third dichroic film 36 The second pattern layer

38 Second exposure image area 40 Second opening

42 second flat layer 44 color pixel array

46 first pixel 48 second pixel

50 third pixel 52 transparent substrate

54 Liquid crystal layer 56 Transparent conductive layer

58 pixel electrode 60 contact element

62 Contact hole 64 Contact plug

66 Contact element 68 Contact plug

70 pixel electrode 72 pixel electrode

74, 78 alignment film 80 LCoS display panel

100 Semiconductor substrate 102 First reflection layer

104 first color filter layer 106 second reflective layer

108 second color filter layer 110 third reflective layer

112 third color filter layer 114 first pixel

116 second pixel 118 third pixel

120 color pixel array 122 first pattern layer

124 First exposure image area 126 Opening

128 Second Pattern Layer 130 Second Exposure Image Area

132 opening 134 flat layer

136 pixel electrode 138 contact element

140 contact plug 142 first buffer layer

144 Contact element 146 Contact plug

148 Second buffer layer 150 First flat layer

152 second flat layer 154 pixel electrode

Detailed ways

Please refer to FIG. 1 to FIG. 7 . FIG. 1 to FIG. 7 are schematic diagrams of a first embodiment of a manufacturing method of an LCoS display device with a color pixel array according to the present invention. In this embodiment, the LCoS display device is a reflective color LCoS display device. First, as shown in FIG. 1 , a semiconductor substrate 10 is provided, such as a silicon substrate, the surface of which includes a plurality of sub-pixel circuits and electronic components (not shown), and then, a first reflective layer 12 is sequentially formed on the surface of the semiconductor substrate 10 , a first dichroic film 14 , a first buffer layer 16 , a second reflective layer 18 and a second dichroic film 20 . The first and second reflective layers 12 and 18 may include conductive metal materials, so that the first reflective layer 12 can be used as a sub-pixel electrode. The first dichroic film 14 and the second dichroic film 20 are respectively used as a first color filter layer and a second color filter layer, and may include a high reflective film layer or a dichroic film material. In addition, the first and second dichroic films 14 and 20 are preferably inorganic dichroic films, which may be formed by stacking inorganic materials such as titanium dioxide and silicon dioxide in different proportions. Furthermore, a second buffer layer 22 can also be selectively formed on the surface of the second dichroic film 20 . It is worth noting that the first and second buffer layers 16, 22 are respectively arranged between the first dichroic film 14 and the second reflective layer 18 and between the second dichroic film 20 and the third reflective layer produced subsequently , the main function is to provide a buffer function in the subsequent etching process, and its material can include the same material as the first and second dichroic film 14, 20, for example, the material of the first buffer layer 16 can be the same as the first dichroic film The surface layer material of the color film 14, therefore when making the first dichroic film 14 and the first buffer layer 16, the first dichroic film 14 can be made slightly thicker than the original predetermined thickness, and the extra part can be regarded as The first buffer layer 16. However, the first and second buffer layers 16, 22 may also include materials different from the first and second dichroic films 14, 20, such as epoxy resin (epoxy), so as not to affect the optical effect and have the same relationship with the reflective layer. A high etch selectivity is a condition. Moreover, in other embodiments, the fabrication of the first and second buffer layers 16 and 22 may also be omitted, and the second reflective layer 18 is directly fabricated on the first dichroic film 14 .

Next, as shown in FIG. 2, a first pattern layer 24 is formed on the semiconductor substrate 10, which may include organic materials or photoresist materials, and a pattern is defined on the photoresist materials through photolithography. The first exposure region 26 may correspond to at least one first-time pixel 46 (shown in FIG. 6 ) on the semiconductor substrate 10 . Next, using the first pattern layer 24 as an etching mask, remove the part of the second buffer layer 22, the second dichroic film 20 and the second reflection layer exposed through the first exposure area 26 of the first pattern layer 24. Layer 18. In this embodiment, since the second buffer layer 22 and the second dichroic film 20 include the same material, the second buffer layer 22 and the second dichroic film 20 can be removed through an etching process, exposing part of the first dichroic film. Two reflective layers 18 . Afterwards, the second reflective layer 18 exposed by the second dichroic film 20 is removed with different etchant until the first buffer layer 16 or the first dichroic film 14 is exposed, while the second dichroic film 20 A first opening 28 is formed in the second reflective layer 18 . In this embodiment, the step of removing part of the second reflective layer 18 may remove a small amount of the first buffer layer 16 at the same time, so that the etching stops in the first buffer layer 16 and does not reduce the first dichroic film. 14 thickness. However, since the second reflective layer 18 includes a metal material, it should have a higher etching selectivity than the first dichroic film 14 or the first buffer layer 16, so if the etching process of the second reflective layer 18 can be well controlled, it will It is not necessary to form the first buffer layer 16 on the first dichroic film 14 if the underlying material is almost not removed.

Next, referring to FIG. 3, the first pattern layer 24 is removed, and then a first flat layer 30 is filled in the first opening 28, which is arranged on the surface of the first dichroic film 14 or the first buffer layer 16, wherein The first flat layer 30 may include the same material as the first dichroic film 14 or the first buffer layer 16, which may be formed on the surface of the semiconductor substrate 10 in a deposition manner, and then the redundant first flat layer 30 is removed by polishing. Material. In other embodiments, if a second buffer layer 22 has not been formed on the surface of the second dichroic film 20 before, the first flat layer 30 (not shown) higher than the surface of the second dichroic film 20 can be used as As the second buffer layer 22.

Please refer to FIG. 4, a third reflective layer 32 and a color filter layer are formed on the surface of the first flat layer 30 and the second buffer layer 22 or the second dichroic film 20, including the material of the dichroic film, as shown in the figure The third dichroic film 34. Likewise, the material of the third reflective layer 32 can be the same as that of the first or second reflective layer 12 , 18 , such as metal material or other reflective and conductive materials. The third dichroic film 34 preferably includes inorganic dichroic film materials, such as titanium dioxide, silicon dioxide, etc., which are stacked in different proportions. Next, a second pattern layer 36 is formed on the third dichroic film 34, which can be formed of organic or photoresist material. The second pattern layer 36 includes a second exposure area 38 and a first exposure area 26, which can be defined by a photolithography process and expose the third dichroic film 34, wherein the second exposure area 38 can correspond to the semiconductor At least one second sub-pixel 48 (shown in FIG. 6 ) on the substrate 10 .

Then, as shown in FIG. 5 , an etching process is performed using the second pattern layer 36 as a mask to remove part of the third dichroic film 34 and the third reflective layer 32 exposed by the second pattern layer 36, Until the second buffer layer 22 is exposed or stops on the surface of the second dichroic film 20 , a second opening 40 is formed in the third dichroic film 34 and the third reflective layer 32 . As shown in FIG. 6 , the second pattern layer 36 is removed, and a second flat layer 42 is formed on the exposed second dichroic film 20 or the second buffer layer 22 . The manufacturing method of the second flat layer 42 can be formed by deposition on the surface of the semiconductor substrate 10 , while filling the second opening 40 , and then removing the redundant part by polishing to make the surface of the semiconductor substrate 10 flat. In this way, the fabrication of the color filter layer on the color LCoS display device of the present invention is completed, and the color pixel array 44 is formed.

In this embodiment, when the light source passes through the first, second, and third dichroic films 14, 20, and 34, it will be filtered by the material of the dichroic film and emitted with light in different wavelength ranges, such as green light and red light, respectively. Light and blue light, so when the light is incident from above the color pixel array 44, it will be reflected by the first, second or third reflective layer 12, 18, 32 of the uppermost layer respectively, and pass through the first, second or third reflective layer of the uppermost layer. The third dichroic films 14, 20, 34 respectively form green light, red light and blue light. Therefore, the part with the first, second or third dichroic film 14, 20, 34 on the surface of the semiconductor substrate 10 can be respectively defined as the first pixel 46, the second pixel 48 and the third pixel of the color pixel array 44. Pixel 50 (the third dichroic film 34 left after the etching process corresponds to the third sub-pixel 50 ), and the first reflective layer 12 serving as a pixel electrode is connected to a MOS transistor or other elements to generate a color image.

Next, as shown in FIG. 7 , a transparent substrate 52 is provided, such as a glass substrate or a quartz substrate, the surface of which includes a transparent conductive layer 56 , such as an indium tin oxide layer. The surface with the color pixel array 44 on the semiconductor substrate 10 is facing the transparent substrate 52, and the transparent substrate 52 is parallel to the semiconductor substrate 10 to be combined, for example, the transparent substrate 52 is fixed on the semiconductor substrate 10 with a sealant, and then placed on the transparent substrate 10. Liquid crystal molecules are poured between the substrate 52 and the semiconductor substrate 10 to form the liquid crystal layer 54 , and the manufacture of the LCoS display panel 80 of the present invention is completed. In addition, in order to control the alignment direction of the liquid crystal molecules, an alignment film 74 and 78 can be formed on the inner surface of the transparent substrate 52 and the semiconductor substrate 10 respectively (the alignment film 78 is formed on the second flat layer 42 ).

It should be noted that, in the first embodiment of the present invention, a color pixel array 44 with at least three colors is produced on the same LCoS display panel 80, and is applied to a monolithic LCoS display, so the semiconductor substrate 10 Three layers of dichroic films (first, second and third dichroic films 14, 20, 34) need to be arranged on the top of the dichroic film, and the first opening 28 and the second dichroic film with different depths are formed in the dichroic film through secondary etching. The opening 40 enables the first, second and third dichroic films 14 , 20 , and 34 to become the outermost dichroic films on the semiconductor substrate 10 in different sub-pixels, so that light can be emitted in different colors. However, if more color pixel arrays are required, other dichroic films can be formed on the third dichroic film 34 and similar processes can be repeated.

Furthermore, the manufacturing method of the color pixel array of the present invention can also be applied to the use of two or more LCoS displays, for example, a color pixel array with only two colors is produced on the same LCoS display panel, such as including green/red or green The /blue color pixel array is combined with an LCoS display panel and an optical engine with other color filter layers to produce a color image. In addition, if a color pixel array with only two colors is to be fabricated on an LCoS display panel, according to the method of the present invention, only one etching process is required to make the surface of the panel have different color separation films. Taking the first embodiment of the present invention as an example, the method for an LCoS display panel with a dual-color pixel array only needs to include the processes in FIG. 1 to FIG. 3 .

Since the present invention mainly provides a manufacturing method for manufacturing a color pixel matrix on the same LCoS display panel, the manufacturing method of pixel electrodes or pixel circuits is not the focus of the present invention. However, in order to enable readers to understand the color pixel matrix manufacturing method and pixel circuits of the present invention The combination and application of the process will briefly illustrate the method of manufacturing a color pixel matrix including contact plug elements in FIGS. 8 to 10 . For the convenience of description, the components in the drawings follow the component symbols of FIG. 1 to FIG. 6 .

Referring to FIG. 8 , firstly, a semiconductor substrate 10 is provided, on which a plurality of sub-pixels are defined to form a pixel array, such as the first sub-pixel 46 , the second sub-pixel 48 and the third sub-pixel 50 . The surface of the semiconductor substrate 10 includes a plurality of pixel circuits (not shown), respectively disposed in each sub-pixel. Then, a first reflective layer 12 is formed on the surface of the semiconductor substrate 10, which includes a pixel electrode 58 and at least one contact element 60, such as a connection pad, disposed in the second or third sub-pixel 48, 50 (shown in the figure The second and third sub-pixels 48 and 50 respectively have a contact element 60 ), and the pixel electrode 58 corresponds to the first-time pixel 46 and is not in contact with the contact element 60 . The method of forming the pixel electrode 58 and the contact element 60 may include firstly forming the first reflective layer 12 on the surface of the semiconductor substrate 10 and then performing a photolithography and etching process to manufacture the pixel electrode 58 and the contact element 60 . Next, a first dichroic film 14 is formed on the surface of the semiconductor substrate 10, and the surface may include a buffer layer (not shown).

Please refer to FIG. 9, another photolithography and etching process is performed to form a contact hole 62 in part of the first dichroic film 14 above the contact element 60, and then fill the contact hole 62 with a conductive material to form a contact plug. 64 in the first dichroic film 14. Next, as shown in FIG. 10, a second reflective layer 18 is formed on the surface of the semiconductor substrate 10, its pattern corresponds to the first pixel 46 and the second pixel 48, and includes a contact element 66, which is arranged on the third pixel 50 above the contact plug 62 and is electrically connected to the contact element 60 through the contact plug 64 . Afterwards, a second dichroic film 20 is formed on the entire surface of the semiconductor substrate 10 , and a contact plug 68 is formed therein, electrically connected to the contact element 66 and the contact element 60 .

Referring to FIG. 11 , a first photoresist layer is coated on the surface of the semiconductor substrate 10 as the first pattern layer 24 , which includes the first image exposure area 26 corresponding to the first pixel 46 . An etching process is then performed to etch the exposed second dichroic film 20 and the second reflective layer 18 through the first exposure area 26 until the surface of the first dichroic film 14, and a dichroic film is formed in the second dichroic film 20. The first opening 28 is disposed in the first pixel 46 . The remaining part of the second reflective layer 18 located in the second sub-pixel 48 is regarded as the pixel electrode 70 of the second sub-pixel 48 , which is electrically connected to the contact element 60 through the contact plug 64 .

Next, as shown in FIG. 12 , the first pattern layer 24 is removed, and a first planar layer 30 is formed on the semiconductor substrate 10 and filled into the first opening 28 at the same time. Afterwards, a third reflective layer 32 and a third dichroic film 34 are sequentially formed on the surface of the semiconductor substrate 10 . Then please refer to FIG. 13, a second pattern layer (not shown) is formed on the third dichroic film 34, which includes the first and second exposure areas 26, 38, exposing the first and second sub-pixels 46 , The third dichroic film 34 in 48. Using the second pattern layer as an etching mask, an etching process is performed to remove the part of the third dichroic film 34 exposed by the second pattern layer and the third reflective layer 32 below it until the second dichroic film 20 surface, and form a second opening 40 in the third dichroic film 34, corresponding to the first and second sub-pixels 46, 48. Finally, the second flat layer 42 is filled in the second opening 40 . The fabrication of the color pixel array 44 is completed. Wherein, the remaining third reflective layer 32 corresponds to the third sub-pixel 50 and is electrically connected to the contact element 60 through the contact plug 68 to be used as the pixel electrode 72 .

In other embodiments of the present invention, the first, second, and third dichroic films and the first, second, and third reflective layers can be fabricated on the semiconductor substrate first, and then etched to define each sub-pixel dichroic film pattern. Please refer to FIG. 14 to FIG. 18 . FIG. 14 to FIG. 18 are process schematic diagrams of the third example of the LCoS display panel of the present invention. First, as shown in FIG. 14, a semiconductor substrate 100 is provided, the surface of which includes a plurality of pixel circuits or electronic components (not shown), and defines a plurality of first-time pixels 114, second-time pixels 116, and third-time pixels. The pixels 118 are respectively used to provide light of different colors to form a color pixel array 120 . Then sequentially form a first reflective layer 102, a first color filter layer 104, a second reflective layer 106, a second color filter layer 108, a third reflective layer 110 and a first reflective layer 100 on the surface of the semiconductor substrate 100. Three color filter layers 112 . Wherein, the first, second and third color filter layers 104, 108, 112 may include inorganic dichroic film materials, and the top of the first and second color filter layers 104, 108 may optionally include a first and A second buffer layer (not shown in the figure) can be made of the same material as the first and second color filter layers 104, 108 or other materials, on the condition that the optical effect of the dichroic film below is not affected, it is used for A buffer function is provided when the second and third reflective layers 106 and 110 are subsequently etched to avoid damage to the underlying dichroic film material.

Next, as shown in FIG. 15, a first pattern layer 122 is formed on the third color filter layer 112, which includes a first exposure area 124, exposing a part of the third color filter corresponding to the pixel 114 for the first time. Optical layer 112. Then use the first pattern layer 122 as an etching mask to perform a first etching process to remove the part of the third color filter layer 112 exposed by the first pattern layer 122 and the third reflective layer 110 below it, until An opening 126 is formed on the surface of the second color filter layer 108 and in the third color filter layer 112 , corresponding to the first exposure image area 124 .

Then, referring to FIG. 16 , a flat layer (not shown) may be optionally filled in the opening 126 so that the semiconductor substrate 100 has a flat surface approximately parallel to the surface of the third color filter layer 112 . Alternatively, a second pattern layer 128 may be directly formed on the surface of the semiconductor substrate 100 , which includes a second image exposure area 130 exposing a portion of the third color filter layer 112 corresponding to the second sub-pixel 116 . Next, as shown in FIG. 17, a second etching process is performed using the second pattern layer 128 as an etching mask to remove the exposed third color filter layer 112, the third reflective layer 110, the second color filter layer 112, and the third color filter layer 110. The optical layer 108 and the second reflective layer 106, until the surface of the first color filter layer 104, an opening 132 is formed in the third and second color filter layers 112, 108 and the third and second reflective layers 110, 106 .

Referring to FIG. 18 , the second pattern layer 128 is removed, and then a flat layer 134 is formed in the opening 132 and the opening 126 . The manufacturing method can deposit a flat layer material (not shown) on the surface of the semiconductor substrate 100, and then remove the flat layer material higher than the third color filter layer 112 by polishing, so that the surface of the flat layer material It is roughly the same as the third color filter layer 112 . Wherein, the material of the flat layer 134 may include the material of the first, second or third color filter layer 104, 108, 112, such as inorganic materials such as silicon dioxide or titanium dioxide or other materials that do not affect the first, second or third color filter layer. Materials for the optical function of the three color filter layers 104 , 108 , 112 .

Therefore, the incident light from above the color pixel array 120 can be respectively reflected by the second, first or third reflective layer 106, 102, 110 on the outermost layer and emitted upwards, presenting the first, second and third times respectively. The color light separated by the uppermost second, first or third color filter layer 108 , 104 , 112 in the pixels 114 , 116 , 118 is, for example, red light, blue light and green light.

In other embodiments of the present invention, the aforementioned second etching process may only be etched to the third reflective layer 110 before stopping, so that the surface layers of the first and second sub-pixels 114 and 116 are both the second color filter layer 108 . In this case, the light reflected upward by the color pixel array 120 will only generate two kinds of colored light corresponding to the second color filter layer 108 and the third color filter layer 112 . Therefore, using the method and spirit of the present invention, pixels with different color light components can be formed on the same color pixel array or on different regions of the same LCoS panel. For example, multi-layer color filters can be formed on the semiconductor substrate according to the aforementioned process. The optical layer and the reflective layer (or etching stop layer) have various opening depths or structures in different pixels, so that one to three or even more colored lights can be generated in different pixels.

In addition, although the third embodiment does not teach how to make the pixel electrodes and the contact plugs between the first, second and third color filter layers 104, 108, 112, those skilled in the art should be able to easily combine the aforementioned The processes in the embodiments are used to manufacture contact plugs, electrical contacts or other electronic components and the color pixel array 120 of the present invention at the same time. Furthermore, those skilled in the art can also combine the methods of the foregoing embodiments to provide a transparent substrate and liquid crystal molecules to combine with the semiconductor substrate 100 to fabricate an LCoS display device.

Please refer to FIG. 19 to FIG. 22 . FIG. 19 to FIG. 22 are process schematic diagrams of the fourth embodiment of manufacturing the color pixel array of an LCoS display device according to the present invention. The components in the diagrams of this embodiment follow the component symbols in FIG. 14 to FIG. 18 . First, as shown in FIG. 19 , a semiconductor substrate 100 is provided, and a plurality of sub-pixels are defined on its surface. The pixels of the third sub-pixel 118 are used for illustration. Next, a first reflective layer 102 is formed thereon. The first reflective layer 102 includes a pixel electrode 136 disposed in the first pixel 114 and two contact elements 138 respectively disposed in the second sub pixel 116 and the third sub pixel 118, wherein the pixel electrode 136 is electrically connected to the contact element 138 Pixel circuits or electronic components (not shown) in the first, second and third sub-pixels 114, 116, 118. The manufacturing method of the first reflective layer 102 can be to deposit a reflective layer on the surface of the semiconductor substrate 100 with metal materials or other conductive materials, and then define and manufacture the pixel electrodes 136 and the contact elements 138 by photolithography and etching processes.

Then, a first color filter layer 104 and a first buffer layer 142 are formed on the surface of the semiconductor substrate 100 . The material of the first buffer layer 142 can be the same as that of the first color filter layer 104 , and the first buffer layer 142 can be used as the first buffer layer 142 by increasing the predetermined thickness of the first color filter layer 104 . Then remove part of the first color filter layer 104 and the first buffer layer 142, and form a contact hole in the first color filter layer 104 on the contact element 138, and then fill the conductive material in the contact hole to form a contact. Plug 140. Then a second reflective layer 106, a second color filter layer 108 and a second buffer layer 148 are sequentially formed on the semiconductor substrate 100. Similarly, the material of the second buffer layer 148 can be similar to that of the second color filter layer. Material of layer 108 . The area of the second reflective layer 106 corresponding to the third sub-pixel 118 includes a contact element 144 , and the second reflective layer 106 also covers portions of the semiconductor substrate 100 corresponding to the first and second sub-pixels 114 , 116 . Next, a contact plug 146 is formed in the second color filter layer 108 and the second buffer layer 148, disposed above the contact element 144, and connected to the third sub-pixel 118 through the contact element 144 and the contact plug 140. The contact elements 138 are electrically connected. Then, a third reflection layer 110 and a third color filter layer 112 are formed on the second buffer layer 148 or the second color filter layer 108 .

Please refer to FIG. 20 , and then form a first pattern layer 122 on the surface of the third color filter layer 112, which includes a first exposure area 124, exposing the third color filter layer 112 corresponding to the pixel 114 for the first time. part. Then use the first pattern layer 122 as an etching mask to remove the exposed part of the third color filter layer 112 and the part of the third reflective layer 110, the second buffer layer 148, and the second color filter layer 108 below. And the second reflective layer 106 , until the surface of the first buffer layer 142 , and an opening 126 is formed. In addition, the remaining part of the second reflective layer 106 corresponding to the second sub-pixel 116 is used as the pixel electrode 154 of the second sub-pixel 116 .

Next, as shown in FIG. 21 , a first planar layer 150 is formed in the opening 126, the material of which can be the same as that of the first buffer layer 142, formed on the surface of the semiconductor substrate 100 by deposition, and selectively removed by polishing. Excess first planar layer 150 material. Then, a second pattern layer 128 is formed on the first flat layer 150 and the third color filter layer 112 , which includes a second exposure area 130 corresponding to the second sub-pixel 116 .

Then, as shown in FIG. 22, using the second pattern layer 128 as a mask, remove the exposed first flat layer 150, the third color filter layer 112 and the third reflective layer 110 until the second buffer layer 148 , and an opening 132 is formed in the third color filter layer 112 and the third reflective layer 110 , corresponding to the second sub-pixel 116 . Afterwards, the second pattern layer 128 is removed, and a second flat layer 152 is formed on the semiconductor substrate 100 , and the second flat layer 152 is filled into the opening 132 at the same time. The material of the second flat layer 152 can be the same as that of the second buffer layer 148 or the second color filter layer 108 . Then, a polishing process is performed to remove the first and second planar layers 150 and 152 on the surface of the third color filter layer 112 , and the fabrication of the color pixel array 120 of the present invention is completed.

Compared with the known technology, since the manufacturing method of the LCoS display device of the present invention is to make three reflective layers interspersed between the first, second and third color filter layers, and utilize the reflective layer including metal material and color The material of the filter layer has different etching characteristics, so the first, second and third color filter layers in each sub-pixel can be defined separately by using a simple etching process, and the reflective layer can be used as an etching stop layer, And avoid destroying the color filter layer under the reflective layer in the etching process, so as to provide the first, second and third color filter layers with different patterns in each sub-pixel. Therefore, the first, second and third color filter layers on the surface of each sub-pixel can respectively split the light into different color lights, and generate and provide light on the same LCoS display panel, thereby generating color images. Furthermore, since the LCoS display device of the present invention manufactures a color pixel array on a single LCoS display panel, the complex optical engine in the known LCoS display device can be simplified, for example, the light splitting and optical system and the color wheel are no longer needed in the optical engine, Only one white light source is needed, and the LCoS display device with a color pixel array of the present invention can be used to generate a color image, which greatly saves process cost and product size.

The above descriptions are only preferred embodiments of the present invention, and all equivalent changes and modifications made according to the claims of the present invention shall fall within the scope of the present invention.

Claims (51)

1. A method for manufacturing a liquid crystal on silicon display device with a color pixel array, comprising: Provide a semiconductor substrate; sequentially forming a first reflection layer, a first color filter layer, a second reflection layer and a second color filter layer on the semiconductor substrate; forming a first pattern layer on the second color filter layer, which includes a first image exposure area; Using the first pattern layer as a mask, removing part of the second color filter layer and part of the second reflective layer, and forming a first opening in the second color filter layer; removing the first pattern layer; and A first planar layer is formed in the first opening to planarize the surface of the semiconductor base. 2. The manufacturing method according to claim 1, wherein the method for removing the part of the second color filter layer and the second reflective layer comprises: Using the first pattern layer as a mask, removing part of the second color filter layer until the second reflective layer is exposed; and Using the first pattern layer as a mask, part of the second reflective layer is removed until the first color filter layer is exposed. 3. The manufacturing method according to claim 1, wherein the method further comprises forming a first buffer layer on the first color filter layer before forming the second reflective layer. 4. The manufacturing method as claimed in claim 3, wherein the first buffer layer comprises the same material as that of the first color filter layer. 5. The manufacturing method as claimed in claim 3, wherein the material of the first buffer layer comprises epoxy resin. 6. The preparation method as claimed in claim 1, wherein the method further comprises: A third reflective layer and a third color filter layer are sequentially formed on the surface of the first flat layer and the second color filter layer: forming a second pattern layer on the third color filter layer, which includes a second image exposure area and the first image exposure area; Using the second pattern layer as a mask, removing part of the third color filter layer and part of the third reflective layer to form a second opening; and A second planar layer is formed in the second opening to planarize the surface of the semiconductor base. 7. The manufacturing method according to claim 6, wherein the first exposure area and the second exposure area respectively correspond to at least one first-time pixel and at least one second-time pixel on the semiconductor substrate, and the remaining The third color filter layer corresponds to at least one third sub-pixel on the semiconductor substrate. 8. The manufacturing method as claimed in claim 6, wherein the third reflective layer comprises metal material. 9. The manufacturing method according to claim 6, wherein before forming the third reflective layer, the method further comprises forming a second buffer layer on the surface of the second color filter layer. 10. The manufacturing method according to claim 1, wherein the first reflective layer comprises: a pixel electrode corresponding to the first image exposure area; and At least one contact element is disposed on the semiconductor substrate outside the first image exposure area. 11. The manufacturing method according to claim 10, wherein the method further comprises forming a contact plug in the first color filter layer, corresponding to the contact element, and the contact plug is used to electrically connect the contact element and the second reflective layer. 12. The manufacturing method as claimed in claim 11, wherein the step of forming the contact plug comprises: removing part of the first color filter layer to form a contact hole in the first color filter layer on the contact element; and Filling the contact hole with conductive material to form the contact plug. 13. The manufacturing method as claimed in claim 1, wherein the first reflective layer and the second reflective layer respectively comprise metal materials. 14. The manufacturing method according to claim 1, wherein the first flat layer comprises the material of the first color filter layer. 15 . The manufacturing method according to claim 1 , wherein the first color filter layer and the second color filter layer can filter natural light to provide a first color light and a second color light with different wavelength ranges respectively. 16. The manufacturing method as claimed in claim 15, wherein the first colored light and the second colored light are blue light and green light, blue light and red light, or green light and red light, respectively. 17. The manufacturing method as claimed in claim 1, wherein the method further comprises forming an alignment film on the semiconductor substrate. 18. The preparation method as claimed in claim 17, wherein the method further comprises: Provide a transparent substrate with a transparent conductive layer on its surface; combining the transparent substrate and the semiconductor base; and Liquid crystal material is poured between the transparent substrate and the semiconductor base. 19. The manufacturing method according to claim 1, wherein the first color filter layer and the second color filter layer respectively comprise inorganic dichroic film materials. 20. The manufacturing method as claimed in claim 1, wherein the first and the second pattern layers respectively comprise photoresist materials. 21. A method for manufacturing a liquid crystal on silicon display device with a color pixel array, comprising: Provide a semiconductor substrate; sequentially forming a first reflective layer, a first color filter layer, a second reflective layer, a second color filter layer, a third reflective layer and a third color filter layer on the semiconductor substrate; forming a first pattern layer on the third color filter layer, which includes a first image exposure area; performing a first etching process, using the first pattern layer as a mask, removing part of the third color filter layer and part of the third reflective layer to form a first opening in the third filter layer; forming a second pattern layer on the third color filter layer, which includes a second image exposure area; performing a second etching process, using the second pattern layer as a mask, removing part of the third color filter layer and part of the third reflective layer to form a second opening; and A first planar layer is formed in the first opening or the second opening on the surface of the semiconductor base. 22. The manufacturing method according to claim 21, wherein the first etching process further comprises removing the second color filter layer and the second reflective layer exposed by the first pattern layer. 23. The manufacturing method according to claim 21, wherein the second etching process further comprises removing the second color filter layer and the second reflective layer exposed by the second pattern layer. 24. The manufacturing method as claimed in claim 21, wherein the method further comprises forming a second flat layer in the first opening before forming the second pattern layer. 25. The manufacturing method as claimed in claim 21, wherein the method further comprises forming a first buffer layer and a second buffer layer respectively disposed under the second reflective layer and under the third reflective layer. 26. The manufacturing method according to claim 25, wherein the first buffer layer and the second buffer layer respectively comprise the same material as that of the first color filter layer and the second color filter layer. 27. The manufacturing method as claimed in claim 25, wherein the material of the first buffer layer or the second buffer layer comprises epoxy resin. 28. The manufacturing method according to claim 21, wherein the first exposure area and the second exposure area correspond to at least one first-time pixel and one second-time pixel on the semiconductor substrate respectively, and the remaining The third color filter layer corresponds to at least one third sub-pixel on the semiconductor substrate. 29. The manufacturing method as claimed in claim 21, wherein the first reflective layer comprises: a pixel electrode corresponding to the first image exposure area; and At least one contact element is arranged on the semiconductor substrate outside the image exposure area. 30. The manufacturing method according to claim 29, wherein the method further comprises forming a contact plug in the first color filter layer, corresponding to the contact element, and the contact plug is used to electrically connect the contact element and the second reflective layer. 31. The manufacturing method according to claim 30, wherein the step of forming the contact plug comprises: removing part of the first color filter layer to form a contact hole in the first color filter layer on the contact element; and Filling the contact hole with conductive material to form the contact plug. 32. The manufacturing method as claimed in claim 21, wherein the first reflective layer, the second reflective layer and the third reflective layer respectively comprise metal materials. 33. The manufacturing method according to claim 21, wherein the first color filter layer, the second color filter layer and the third color filter layer can filter natural light to respectively provide the first color filter layer with different wavelength ranges. First color light, second color light and third color light. 34. The manufacturing method as claimed in claim 33, wherein the first colored light, the second colored light and the third colored light are green light, blue light and red light respectively. 35. The manufacturing method as claimed in claim 21, wherein the method further comprises forming an alignment film on the first planarization layer. 36. The preparation method as claimed in claim 35, wherein the method further comprises: Provide a transparent substrate with a transparent conductive layer on its surface; combining the transparent substrate and the semiconductor base; and Liquid crystal material is poured between the transparent substrate and the semiconductor substrate. 37. The manufacturing method as claimed in claim 21, wherein the first color filter layer, the second color filter layer and the third color filter layer respectively comprise inorganic dichroic film materials. 38. The manufacturing method as claimed in claim 21, wherein the first and the second pattern layers respectively comprise photoresist materials. 39. A liquid crystal on silicon display device with a color pixel array, comprising: A semiconductor substrate, the surface of which defines a plurality of sub-pixels forming an array of color pixels; The first reflective layer and the first color filter layer are arranged on the semiconductor substrate; The second reflective layer and the second color filter layer are disposed on the first color filter layer, and the second color filter layer and the second reflective layer have a first opening corresponding to the first opening on the semiconductor substrate. sub-pixel; and The third reflective layer and the third color filter layer are disposed on the second color filter layer, and the third color filter layer and the third reflective layer have a second opening corresponding to the first opening on the semiconductor substrate. First pixel and second pixel. 40. The liquid crystal on silicon display device as claimed in claim 39, further comprising a flat layer disposed in the first opening and the second opening. 41. The liquid crystal on silicon display device as claimed in claim 40, wherein the flat layer comprises: a first planar layer is disposed within the first opening; and The second flat layer is disposed in the second opening. 42. The liquid crystal on silicon display device as claimed in claim 39, further comprising a first buffer layer disposed between the first color filter layer and the second reflective layer. 43. The liquid crystal on silicon display device as claimed in claim 39, further comprising a second buffer layer disposed between the second color filter layer and the third reflective layer. 44. The liquid crystal on silicon display device as claimed in claim 39, wherein the first reflective layer comprises: a pixel electrode corresponding to the first pixel; and The contact element is arranged in the second sub-pixel or the third sub-pixel. 45. The LCD device as claimed in claim 44, wherein the contact element is not in contact with the pixel electrode. 46. The liquid crystal on silicon display device as claimed in claim 44, further comprising a first contact plug disposed in the first color filter layer and electrically connected to the contact element and the second reflective layer. 47. The liquid crystal on silicon display device as claimed in claim 46, further comprising a second contact plug disposed in the second color filter layer and electrically connected to the contact element, the second reflective layer and the first Three reflective layers. 48. The liquid crystal on silicon display device as claimed in claim 39, wherein the second reflective layer comprises: a pixel electrode corresponding to the second sub-pixel; and The contact element is arranged in the third pixel, and the contact element is not in contact with the pixel electrode. 49. The liquid crystal on silicon display device as claimed in claim 39, wherein the third reflective layer comprises a pixel electrode corresponding to a third sub-pixel. 50. The liquid crystal on silicon display device as claimed in claim 39, wherein the first color filter layer, the second color filter layer and the third color filter layer respectively comprise inorganic dichroic film materials. 51. The LCD-on-Si display device as claimed in claim 39, wherein the LCD-on-Si display device is a reflective LCD device.

Images