CN100539237C - Method for manufacturing organic electroluminescent display - Google Patents
Method for manufacturing organic electroluminescent display Download PDFInfo
- Publication number
- CN100539237C CN100539237C CNB2004100031720A CN200410003172A CN100539237C CN 100539237 C CN100539237 C CN 100539237C CN B2004100031720 A CNB2004100031720 A CN B2004100031720A CN 200410003172 A CN200410003172 A CN 200410003172A CN 100539237 C CN100539237 C CN 100539237C
- Authority
- CN
- China
- Prior art keywords
- protective layer
- organic electroluminescent
- substrate
- active element
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000011241 protective layer Substances 0.000 claims abstract description 42
- 238000005520 cutting process Methods 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 8
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- -1 polyethylene terephthalate Polymers 0.000 claims description 2
- 238000005401 electroluminescence Methods 0.000 claims 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 230000005525 hole transport Effects 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 229920000515 polycarbonate Polymers 0.000 claims 1
- 239000004417 polycarbonate Substances 0.000 claims 1
- 229920000139 polyethylene terephthalate Polymers 0.000 claims 1
- 239000005020 polyethylene terephthalate Substances 0.000 claims 1
- 238000005096 rolling process Methods 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000011109 contamination Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000003860 storage Methods 0.000 description 5
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- LCJRHAPPMIUHLH-UHFFFAOYSA-N 1-$l^{1}-azanylhexan-1-one Chemical compound [CH]CCCCC([N])=O LCJRHAPPMIUHLH-UHFFFAOYSA-N 0.000 description 2
- 229920002292 Nylon 6 Polymers 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229950001919 policapram Drugs 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011850 water-based material Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Electroluminescent Light Sources (AREA)
Abstract
The invention provides an active element substrate with a protective layer. The substrate comprises an active element, a pixel electrode and a protective layer, wherein the pixel electrode is electrically connected with the active element, and the protective layer covers the active element and the pixel electrode in a comprehensive manner. After the substrate is processed in the array section, a protective layer is formed on the substrate, and then cutting, delivering, warehousing and storing are carried out, and the protective layer is removed before the organic electroluminescent element process, so as to avoid the problems of particles, scratch or contamination and the like in the subsequent organic electroluminescent element process.
Description
Technical field
The invention relates to active element substrate, particularly relevant for the active element substrate with protective layer and the manufacture method of carrying the organic electro-luminescent display on it.
Background technology
General tradition is to belong to large substrates technology at Thin Film Transistor-LCD (TFT-LCD) panel, just directly sends into upright (cell) technology of panel sets after array (array) segment process is finished.Yet, with regard to organic electro-luminescent display is made flow process, after substrate is finished array (array) segment process, must cut, send outside and put in storage storage usually, just carry out the organic electroluminescent element technology of back segment.Yet, in cutting and send outside in the process, can cause particulate, scratch or problem such as stained and reduce yield.
Summary of the invention
In view of this; the object of the present invention is to provide a kind of manufacture method of organic electro-luminescent display; be after the substrate with thin film transistor (TFT) array is finished array (array) segment process; on substrate, form a protective layer; just remove this protective layer after waiting to finish cutting, send outside and put in storage action such as storage; to avoid particulate, scratch or problem such as stained, so can promote the yield of organic electro-luminescent display.
According to above-mentioned purpose, the invention provides a kind of manufacture method of organic electro-luminescent display, comprise the following steps: to provide an active element substrate at least, this substrate has been pre-formed an active element; Form an anti-scratch protective layer on this substrate; Above-mentioned substrate cut with active element is become to be fit to the size of organic electroluminescent element processing procedure; When treating that desire is carried out back-end process with this substrate, remove this anti-scratch protective layer fully; And form an organic electroluminescent element on this active element substrate.
Above-mentioned active element comprises thin-film transistor (TFT), thin film diode (TFD), PIN diode, MIM diode or field-effect transistor (FET).
In a preferred embodiment, protective layer is a water-based material, for example polyvinyl alcohol (PVA).In another embodiment, protective layer is an organic material, for example acrylic compounds eurymeric photoresist.In another embodiment, wherein protective layer is the dry film of fitting in the roll extrusion mode, for example policapram (polyimide, PI), PETG (PET) or Merlon (PC).In addition, protective layer also can be inorganic material, for example silica or silicon nitride.
Description of drawings
Fig. 1 is the making flow chart that shows according to organic electro-luminescent display of the present invention; And
Fig. 2 shows that the present invention has the profile of the active element substrate of protective layer.
Symbol description:
10～substrate;
20～active element;
30～separator;
40～pixel electrode;
100～active element substrate;
200～protective layer;
The making step of 310-350～organic electro-luminescent display.
Embodiment
Below cooperate graphic and preferred embodiment, to illustrate in greater detail the present invention.
Below utilize Fig. 1 that the have active element substrate of protective layer and the making flow chart of organic electro-luminescent display of the present invention are described.
See also Fig. 1, at first please refer to step 310, go up the making active element in a substrate (for example being glass, silicon or plastic base), above-mentioned active element comprises thin-film transistor (TFT), thin film diode (TFD), PIN diode, MIM diode or field-effect transistor (FET).Then, please refer to step 320, form a protective layer on substrate with active element.Please refer to step 330a, before carrying out the organic electroluminescent element technology of back segment, above-mentioned substrate cut with active element must be become be fit to the size of organic electroluminescent element technology.Shown in step 340, remove this protective layer afterwards.According to another better embodiment of the present invention, after completing steps 320, can directly carry out step 330b, the active element substrate that will have protective layer is transported to client or warehouse-in storage.Shown in step 340, remove protective layer more afterwards.At last, please refer to step 350, form organic electroluminescent element on substrate with active element.
Fig. 2 is the profile that shows the active element substrate 100 with protective layer 200.This active element substrate 100 comprises substrate 10, for example a glass substrate.Substrate 10 be provided with active element 20.Above-mentioned active element 20 comprises thin-film transistor (TFT), thin film diode (TFD), PIN diode, MIM diode or field-effect transistor (FET).Between active element 20, has separator 30.Separator 30 is provided with a pixel electrode 40, and this pixel electrode 40 electrically connects with active element 20.
Before carrying out the organic electroluminescent element technology of back segment, above-mentioned active element substrate must be cut into the size that is fit to organic electroluminescent element technology.Yet present employed cutting equipment major part is the knife flywheel type cutter head, easily has glass chip to be attached to active element substrate after the cutting, in follow-up cleaning, easily produces problems such as scratch and particulate.Therefore, the present invention increases protective layer 200 and covers thereon comprehensively after substrate is finished array (array) segment process.
In a preferred embodiment, protective layer 200 is made by water-based material, for example polyvinyl alcohol (PVA).Utilizing the mode of rotary coating (spin coating) that polyvinyl alcohol (PVA) solution is revolved to be distributed in has on the source device substrate 100; soft roasting temperature after the film forming is about 80～120 ℃; promptly finish the making of protective layer 200 after soft roasting step, the removal method of protective layer 200 can be removed with water-washing method.
In another preferred embodiment, protective layer 200 also can be made by organic material, and for example acryl is a kind of eurymeric photoresist.The mode of utilizing rotary coating (spin coating) is covered in the solution of eurymeric photoresist to be had on the source device substrate 100, and soft roasting temperature is about 80～90 ℃ after the film forming, 2～3 minutes.Then, blanket exposure (more than ultraviolet light I-line (I-line) the exposure energy 250mJ) need not toasted (baking) after the exposure, promptly finishes the making of protective layer 200.Remove the organic base solution removal of protective layer 200 method usable concentration 0.1%～1.0%, for example the developer solution of concentration 0.4% tetramethyl ammonium hydroxide (TMAH).
In another preferred embodiment; protective layer 200 is the dry film materials of fitting in the roll extrusion mode; for example with policapram (polyimide, PI), PETG (PET) or Merlon dry films such as (PC) fit in has on the source device substrate 100.The removal method is soaked and can be removed with organic solution.
In addition, protective layer 200 also can be inorganic material, for example silica or silicon nitride.Its generation type can be utilized physical vaporous deposition (PVD) or chemical vapour deposition technique (CVD) to be deposited on to have on the source device substrate 100.The removal method removes with wet etching or dry ecthing method.
Before carrying out the organic electroluminescent element technology of back segment; remove protective layer 200; to guarantee that the substrate 100 with active element is entering the clean level of last part technology; just carry out organic electroluminescent element technology, wherein organic electroluminescent element comprises: hole transmission layer, organic electric-excitation luminescent layer, electron transfer layer and conductive layer.Because the protection of protective layer 200, problems such as particulate that is caused when being avoided cutting or sending outside and scratch significantly improve the yield of organic electro-luminescent display.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100031720A CN100539237C (en) | 2004-02-24 | 2004-02-24 | Method for manufacturing organic electroluminescent display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100031720A CN100539237C (en) | 2004-02-24 | 2004-02-24 | Method for manufacturing organic electroluminescent display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1662108A CN1662108A (en) | 2005-08-31 |
| CN100539237C true CN100539237C (en) | 2009-09-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100031720A Expired - Lifetime CN100539237C (en) | 2004-02-24 | 2004-02-24 | Method for manufacturing organic electroluminescent display |
Country Status (1)
| Country | Link |
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| CN (1) | CN100539237C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108258045A (en) * | 2016-12-29 | 2018-07-06 | 无锡华润华晶微电子有限公司 | The preparation method of super-junction semiconductor device |
| CN107425126B (en) * | 2017-04-27 | 2019-09-10 | 京东方科技集团股份有限公司 | Pixel defines structure, organic luminescent device and its packaging method, display device |
| US11107876B2 (en) | 2018-04-26 | 2021-08-31 | Sakai Display Products Corporation | Organic electroluminescent device and method for producing same |
| JP7109492B2 (en) * | 2020-02-18 | 2022-07-29 | 堺ディスプレイプロダクト株式会社 | Method for manufacturing organic EL device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1372325A (en) * | 2001-02-19 | 2002-10-02 | 株式会社半导体能源研究所 | Illumination device and making method thereof |
| US20030071569A1 (en) * | 2001-10-17 | 2003-04-17 | Chi Mei Optoelectronics Corporation | Organic electro-luminescent display and method of sealing the same |
| CN1419297A (en) * | 2001-11-09 | 2003-05-21 | 株式会社半导体能源研究所 | Luminous equipment and making method thereof |
| CN1434668A (en) * | 2002-01-24 | 2003-08-06 | 株式会社半导体能源研究所 | Light emitting device and making method thereof |
| JP2003257622A (en) * | 2002-02-28 | 2003-09-12 | Fuji Electric Co Ltd | Organic EL display and manufacturing method thereof |
-
2004
- 2004-02-24 CN CNB2004100031720A patent/CN100539237C/en not_active Expired - Lifetime
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1372325A (en) * | 2001-02-19 | 2002-10-02 | 株式会社半导体能源研究所 | Illumination device and making method thereof |
| US20030071569A1 (en) * | 2001-10-17 | 2003-04-17 | Chi Mei Optoelectronics Corporation | Organic electro-luminescent display and method of sealing the same |
| CN1419297A (en) * | 2001-11-09 | 2003-05-21 | 株式会社半导体能源研究所 | Luminous equipment and making method thereof |
| CN1434668A (en) * | 2002-01-24 | 2003-08-06 | 株式会社半导体能源研究所 | Light emitting device and making method thereof |
| JP2003257622A (en) * | 2002-02-28 | 2003-09-12 | Fuji Electric Co Ltd | Organic EL display and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN1662108A (en) | 2005-08-31 |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
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Granted publication date: 20090909 |