CN100533749C - Solid-state imaging device and manufacturing method thereof - Google Patents

Abstract

A method of manufacturing a solid-state imaging device including photoelectric conversion elements two-dimensionally arranged on a semiconductor substrate, and filter patterns of a plurality of colors arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements. composed of color filters. Filter patterns of a plurality of colors are formed by sequentially patterning a plurality of color filter layers. Among the filter patterns of a plurality of colors, at least an initially formed filter pattern is formed by dry etching, and the remaining filter patterns are formed by photolithography.

Description

Solid-state imager and manufacture method thereof

Technical field

The present invention relates to components of photo-electric conversion such as C-MOS, CCD is the solid-state imager and the manufacture method thereof of representative, the colour filter that particularly forms corresponding to the components of photo-electric conversion.

Background technology

Lift-launch constantly to high pixelation, miniaturization development, particularly becomes the Pixel Dimensions that is lower than 2 μ m * 2 μ m in recent years at the solid-state imagers such as C-MOS, CCD of digital camera etc. in trickle element.

In addition, solid-state imager becomes a pair of with the components of photo-electric conversion and has colour filter, has realized colorize.The formation method of colour filter normally forms method of patterning (for example with reference to 11-No. 68076 communiques of Japanese kokai publication hei) by photoetching process.

In addition, the zone that the components of photo-electric conversion of solid-state imager work to light-to-current inversion (peristome), depend on the size and the pixel count of solid-state imager, but the whole area with respect to solid-state imager only limits to 20～40% degree, because the less meeting of peristome directly causes sensitivity to reduce, so usually for its compensation is formed the lenticule that optically focused is used on the components of photo-electric conversion.

But, in recent years, requirement for the high meticulous solid-state imager that surpasses 6,000,000 pixels increases, the element that the Pixel Dimensions of the colour filter that attaches in these high meticulous solid-state imagers is lower than 2 μ m * 2 μ m becomes many, and the deficiency that produces the resolving power of the colour filter that forms by photoetching process brings dysgenic problem for the characteristic of solid-state imager.The deficiency of resolving power shows as the uneven color that the shape defect by pattern causes below 2.5 μ m or in the Pixel Dimensions about 1.8 μ m.

If Pixel Dimensions diminishes, then aspect ratio becomes big (thickness becomes big with respect to width), so the color filter part (effective outer part of pixel) that will remove originally can not be removed fully, brings harmful effect for other pixels as residue.For being removed, residue carried out prolonging the method for developing time etc., but the problem that also exists even the colour filter (pixel) of needs curing is also peeled off.

In addition, in utilizing the composition of photoetching, have the pattern edge of the colour filter phenomenon of distinct (corner angle occurring) that becomes, fine if Pixel Dimensions becomes, then these corner angle can cause uneven color etc., bring harmful effect for the performance of colour filter.

In addition, if the dichroism that is met, then have to make the thickness thickening of colour filter, if the thickness thickening of colour filter, along with the miniaturization of pixel, the bight of pattern becomes circle etc., the trend that has resolving power to reduce.Colour filter is formed by the photoresist that has added coloring pigment, if but the pigment concentration that is included in the colour filter improves, then the required light of photocuring reaction can not arrive the bottom of colour filter, become insufficient so solidify, occur in produce in the developing procedure of photoetching peel off, the problem of picture element flaw.

And then, under the thicker situation of colour filter, not only there is the problem of manufacturing process, also exist and incide the components of photo-electric conversion from other adjacent filter patterns of the light transmission of oblique incidence, the problem that colour mixture or sensitivity reduce takes place.This problem diminishes along with the Pixel Dimensions of colour filter and becomes remarkable.

According to above record, in order to increase the pixel count of solid-state imager, except the high fine pattern of colour filter, slimming also is an important problem.

In addition, the problem of the colour mixture of incident light, the distance between the colour filter and the components of photo-electric conversion also can take place when big.

In addition, the picture element that noise increases such as caused lenticular aperture opening ratio reduction of solid-state imager (being that sensitivity reduces) that this height is meticulous and dazzle, smear cause reduces and becomes bigger problem, in order to improve lenticule, need reduce distance under the lens for towards the optically focused of the incident light of the components of photo-electric conversion and improve S/N ratio in the components of photo-electric conversion.Under lens, under the bigger situation of distance, following two such problems are arranged.

The 1st, under the bigger situation of distance, the angle that is taken into of incident light diminishes under lens, and incident light quantity reduces and becomes darker demonstration on the whole.In addition, the 2nd, in the camera that uses the components of photo-electric conversion such as CMOS or CCD, usually the aperture (F value) by object lens changes the angle of incident light, reduce because of skew ray increase, optically focused reduction make sensitivity at open sides, perhaps different significantly with the angle of place, end incident light in the central authorities of the pixel region of the semiconductor chip that is formed with the components of photo-electric conversion, so the incident light to pixel (components of photo-electric conversion) incident of end reduces, become darker demonstration at the place, end of display frame.

In addition, general colour filter is good in order to make with the connecting airtight property of substrate, form planarization layer on semiconductor substrate, and disposed thereon is provided with colour filter, but, wish to eliminate planarization layer in order to reduce the miniaturization of distance under the above-mentioned lens, realization solid-state imager.But, owing to the connecting airtight property of chromatic photoresist agent that is used for photoetching process and semiconductor substrate is relatively poor, can when developing, peel off, therefore be difficult to eliminate planarization layer.

In order to prevent such problem, proposed to utilize medicine to handle semiconductor substrate surface, import easily and the technology of the functional group of resin-bonded at semiconductor substrate surface, even but utilize this method, can not obtain the connecting airtight property fully of semiconductor substrate and colour filter.

On the other hand, colour filter generally is made of the filter of 3 blue, green, red primary colors.The green photoresist that forms green filters is compared with the red photoresist or the blue photoresist that form red filter or blue filter, coloured material in nature, refractive index after solidifying is lower, becomes problem in the design of solid-state imager.Promptly, the chromatic photoresist agent that is used for photoetching process is subjected to the photosensitive restriction of needs, refractive index the higher person after selecting to solidify is very difficult, so because there is lenticular spotlight effect difference in the difference of the refractive index of three such look colour filters and produces uneven problem in reflectivity.

As mentioned above, the colour filter that passes through photoetching process formation in the past has can not obtain sufficient resolution, easy residual residue, easily the problem that pixel is peeled off takes place, and has the problem of the characteristic reduction that makes solid-state imager.In addition, has the bigger problem of the distance of the colour filter and the components of photo-electric conversion and the distance of the lenticule and the components of photo-electric conversion (lens are distance down).

Summary of the invention

The purpose of this invention is to provide a kind of solid-state imager, possess do not take place the bad and residue of pattern form peel off etc. and form, and the distance of the components of photo-electric conversion less and do not have a uneven colour filter of reflectivity between pixel.

Another object of the present invention provides a kind of manufacture method of making such solid-state imager.

According to the 1st technical scheme of the present invention, a kind of manufacture method of solid-state imager is provided, this solid-state imager possesses two-dimensional arrangement at the components of photo-electric conversion on the semiconductor substrate and the colour filter that is made of the filter pattern that is provided in a plurality of colors on the above-mentioned semiconductor substrate corresponding to each these components of photo-electric conversion, wherein, the filter pattern of above-mentioned a plurality of colors forms by a plurality of color-filter layers of composition successively; This manufacture method possesses: utilize dry-etching to form the operation of the initial at least filter pattern that forms in the filter pattern of above-mentioned a plurality of colors; Utilize photoetching to form the operation of remaining filter pattern.

According to the 2nd technical scheme of the present invention, a kind of manufacture method of solid-state imager is provided, this solid-state imager possesses two-dimensional arrangement at the components of photo-electric conversion on the semiconductor substrate, be provided in the colour filter on the above-mentioned semiconductor substrate and the planarization layer of part or all formation on this semiconductor substrate corresponding to each these components of photo-electric conversion, above-mentioned colour filter has the filter pattern of a plurality of colors, wherein, the filter pattern of above-mentioned a plurality of colors forms by a plurality of color-filter layers of composition successively; This manufacture method possesses: carry out dry etching by the planarization layer that does not need part and its below to 1 color-filter layer, form the operation of initial at least 1 the filter pattern that forms in the filter pattern of above-mentioned a plurality of colors; Utilize photoetching to form the operation of other filter patterns.

According to the 3rd technical scheme of the present invention, a kind of solid-state imager is provided, possesses two-dimensional arrangement at the components of photo-electric conversion on the semiconductor substrate and the colour filter that constitutes by the filter pattern that is provided in a plurality of colors on the above-mentioned semiconductor substrate corresponding to each these components of photo-electric conversion, wherein, the filter pattern of above-mentioned a plurality of colors comprises 1 filter pattern of the resin that contains hot curing and contains other filter patterns of the resin of photocuring.

According to the 4th technical scheme of the present invention, a kind of solid-state imager is provided, possesses two-dimensional arrangement at the components of photo-electric conversion on the semiconductor substrate and the colour filter that constitutes by the filter pattern that is provided in a plurality of colors on the above-mentioned semiconductor substrate corresponding to each these components of photo-electric conversion, wherein, the filter pattern of the area maximum in the filter pattern of above-mentioned a plurality of colors contains the resin of hot curing, and other filter patterns contain the resin of photocuring.

According to the 5th technical scheme of the present invention, a kind of solid-state imager is provided, possesses two-dimensional arrangement at the components of photo-electric conversion on the semiconductor substrate, be provided in the colour filter on the above-mentioned semiconductor substrate and the planarization layer of part or all formation on this semiconductor substrate corresponding to each these components of photo-electric conversion, above-mentioned colour filter has the filter pattern of a plurality of colors, wherein, the filter pattern of above-mentioned a plurality of colors forms by a plurality of color-filter layers of composition successively; Carry out dry etching by the planarization layer that does not need part and its below, form the initial at least filter pattern that forms in the filter pattern of above-mentioned a plurality of colors 1 color-filter layer; Utilize photoetching to form other filter patterns; When above-mentioned dry etching, the part of thickness of the planarization layer of the below of the residual above-mentioned color-filter layer that does not need part; In the planarization layer below the filter pattern of above-mentioned a plurality of colors, the part of the filter pattern of 1 color below is different with the segment thickness of the filter pattern below of other colors.

According to the 6th technical scheme of the present invention, a kind of solid-state imager is provided, possesses two-dimensional arrangement at the components of photo-electric conversion on the semiconductor substrate, be provided in the colour filter on the above-mentioned semiconductor substrate and the planarization layer of part or all formation on this semiconductor substrate corresponding to each these components of photo-electric conversion, above-mentioned colour filter has the filter pattern of a plurality of colors, wherein, the filter pattern of above-mentioned a plurality of colors forms by a plurality of color-filter layers of composition successively; Carry out dry etching by the planarization layer that does not need part and its below, form the initial at least filter pattern that forms in the filter pattern of above-mentioned a plurality of colors 1 color-filter layer; Utilize photoetching to form other filter patterns; Above-mentioned colour filter comprises across planarization layer and is formed on the filter pattern on the above-mentioned semiconductor substrate and is formed directly into filter pattern on the above-mentioned semiconductor substrate.

According to the 7th technical scheme of the present invention, a kind of solid-state imager is provided, possesses two-dimensional arrangement at the components of photo-electric conversion on the semiconductor substrate, be provided in the colour filter on the above-mentioned semiconductor substrate and the planarization layer of part or all formation on this semiconductor substrate corresponding to each these components of photo-electric conversion, above-mentioned colour filter has the filter pattern of a plurality of colors, wherein, the filter pattern of 1 color in the filter pattern of above-mentioned a plurality of colors contains the resin of hot curing, and the filter pattern of all the other colors contains the resin of photocuring.

Description of drawings

Figure 1A illustrates that the dry-etching that utilizes that uses in the present invention carries out the operation cutaway view of the formation method of composition.

Figure 1B illustrates that the dry-etching that utilizes that uses in the present invention carries out the operation cutaway view of the formation method of composition.

Fig. 1 C illustrates that the dry-etching that utilizes that uses in the present invention carries out the operation cutaway view of the formation method of composition.

Fig. 1 D illustrates that the dry-etching that utilizes that uses in the present invention carries out the operation cutaway view of the formation method of composition.

Fig. 1 E illustrates that the dry-etching that utilizes that uses in the present invention carries out the operation cutaway view of the formation method of composition.

Fig. 2 A illustrates that the operation cutaway view of the formation method of composition is carried out in the photoetching that utilizes of use in the present invention.

Fig. 2 B illustrates that the operation cutaway view of the formation method of composition is carried out in the photoetching that utilizes of use in the present invention.

Fig. 2 C illustrates that the operation cutaway view of the formation method of composition is carried out in the photoetching that utilizes of use in the present invention.

Fig. 3 is the phantom of the solid-state imager that obtains of the manufacture method of utilizing one embodiment of the present invention to relate to.

Fig. 4 A is a cutaway view of representing the manufacture method of the solid-state imager that one embodiment of the present invention relates to by process sequence.

Fig. 4 B is a cutaway view of representing the manufacture method of the solid-state imager that one embodiment of the present invention relates to by process sequence.

Fig. 4 C is a cutaway view of representing the manufacture method of the solid-state imager that one embodiment of the present invention relates to by process sequence.

Fig. 4 D is a cutaway view of representing the manufacture method of the solid-state imager that one embodiment of the present invention relates to by process sequence.

Fig. 4 E is a cutaway view of representing the manufacture method of the solid-state imager that one embodiment of the present invention relates to by process sequence.

Fig. 4 F is a cutaway view of representing the manufacture method of the solid-state imager that one embodiment of the present invention relates to by process sequence.

Fig. 4 G is a cutaway view of representing the manufacture method of the solid-state imager that one embodiment of the present invention relates to by process sequence.

Fig. 5 is the part vertical view of solid-state imager shown in Figure 3.

Fig. 6 is the phantom of the solid-state imager that relates to of another embodiment of the present invention.

Fig. 7 is the phantom of the solid-state imager that relates to of another embodiment of the present invention.

Fig. 8 A is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 8 B is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 8 C is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 8 D is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 8 E is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 8 F is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 8 G is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 8 H is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 8 I is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the present invention relates to by process sequence.

Fig. 9 A is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the invention relates to by process sequence.

Fig. 9 B is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the invention relates to by process sequence.

Fig. 9 C is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the invention relates to by process sequence.

Fig. 9 D is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the invention relates to by process sequence.

Fig. 9 E is a cutaway view of representing the manufacture method of the solid-state imager that another embodiment of the invention relates to by process sequence.

Figure 10 is the microphotograph that is illustrated in the green pattern of the various Pixel Dimensions that form across planarization layer on the test pattern substrate.

Figure 11 is the microphotograph that is illustrated in the green pattern of the various Pixel Dimensions that form across planarization layer on the test pattern substrate.

Figure 12 is the microphotograph of the green pattern of the 1.5 μ m Pixel Dimensions that form with photolithographicallpatterned on glass substrate.

Figure 13 is the microphotograph of the green pattern of the 2.0 μ m Pixel Dimensions that form with photolithographicallpatterned on glass substrate.

Figure 14 is the microphotograph of the green pattern of the 2.0 μ m Pixel Dimensions that form with etching mode on glass substrate.

Embodiment

Below, the best mode that is used to carry out an invention is described.

The feature of the manufacture method of the solid-state imager that the 1st technical scheme of the present invention relates to is, the initial at least filter pattern that forms in the filter pattern of a plurality of colors utilizes dry-etching to form, and remaining filter pattern utilizes photoetching to form.

If directly form the filter pattern with photoetching method on semiconductor substrate, then photoresist does not have and semiconductor substrate connecting airtight property fully, produces the problem of peeling off when developing.With respect to this, if utilize dry-etching, since in becoming the resin resist of colour filter, can freely select resolution than chromatic photoresist agent high and high with the connecting airtight property of substrate semiconductor resist, so can with the filter pattern of the fine pattern of the 1st color smoothly, do not have residue and carry out composition with peeling off.

At this moment; utilizing dry-etching to form under the situation of the later filter pattern of the 2nd color; if the mechanism that protects the filter pattern surface that forms previously is not set, the filter pattern surface that then produces not at all easy formation can be because of the problem of dry-etching roughening.In addition, the problem that also has the color-filter layer that is provided with after concavo-convex can the influence of the filter pattern that forms previously.

So, utilize dry-etching to form to the filter pattern of major general's the 1st color, utilize photoetching to form in the filter pattern of all the other colors.Particularly, utilize dry-etching to form the filter pattern of the 1st color, utilize photoetching to form the later filter pattern of the 2nd color.

If like this; even the surface of the filter pattern of special protection the 1st color not then; in the composition operation of the later colour filter of the 2nd color of being undertaken by photoetching; the surface of the filter pattern of the 1st color can roughening yet; and; by the filter pattern that the later filter pattern of the 2nd color is connected airtight the 1st color in lower floor is securely kept, also prevented from when developing, to peel off.That is, owing to utilize the effect of the filter graph case performance anchor that dry-etching forms, so can prevent coming off of the filter pattern that forms with photoetching method.

In addition, because the precision of the initial filter pattern that forms affects the precision of colour filter integral body significantly, so as long as the initial at least filter pattern that forms uses the method for dry-etching, the precision of colour filter integral body is uprised, and can access does not have even, the more solid-state imager of pixel count of irregular colour.

More than, according to the 1st technical scheme of the present invention, because forming operation, initial at least pattern come the composition color-filter layer to carry out by using dry-etching, so the semiconductor resist etc. that can freely select to carry out high fine patterning is as mask, so can be with good shape, no residue ground, the colour filter that pixel forms fine pattern with peeling off does not take place.Promptly, in such method, carry out dry-etching by color-filter layer to hot curing, can form filter pattern at first with the good regulation of the connecting airtight property of substrate, even utilize photoetching to form other filter pattern thereafter, owing to the initial good filter pattern of connecting airtight property that forms has prevented peeling off of adjacent filter pattern with being adjacent.In addition because the initial filter pattern full solidification that forms, so after the developing procedure of photoetching in can not peel off.

The feature of the manufacture method of the solid-state imager that the 2nd technical scheme of the present invention relates to is, during the initial at least filter pattern that forms in forming the filter pattern of a plurality of colors, utilize dry-etching to form the planarization layer that does not need part and its lower floor of this filter pattern, and utilize photoetching to form other filter pattern.

In the manufacture method of the solid-state imager that such the 2nd technical scheme of the present invention relates to, because the filter pattern to the initial formation of major general utilizes dry-etching to form, so the same effect of manufacture method by the solid-state imager that relates to above-mentioned the 1st technical scheme of the present invention can access same effect.

In addition, the dichroism difference that general filter pattern requires each color, the resin of use and pigment are also different, so the thickness difference.In addition, utilize the filter pattern of dry-etching formation owing to do not need to have photonasty, so can improve pigment concentration.Therefore, can make its Billy thin with the filter pattern that photoetching forms.

When forming the filter pattern with dry-etching, by making dry-etching enter into planarization layer, can be absorbed in different-thickness in each filter pattern poor, particularly with the thickness difference of the filter pattern that utilizes photoetching to form, can provide the step difference on the surface that has possessed each color less, with the solid-state imager of the less colour filter of the distance of the components of photo-electric conversion.

More than, according to the 2nd technical scheme of the present invention, provide a kind of possessed high meticulous, do not have residue and come off, the step difference on the surface of edge-smoothing, each color is less, with the manufacture method of the solid-state imager of the less colour filter of the distance of the components of photo-electric conversion.

In the manufacture method of the solid-state imager that the 2nd technical scheme of the present invention relates to, utilizing dry-etching to form in the operation of 1 filter pattern, can stay a part of thickness of the planarization layer of the color-filter layer below that does not need part, make that the thickness of the planarization layer below thickness and the filter pattern that utilizes photoetching to form of the planarization layer that utilizes the filter pattern below that dry-etching forms is different.

In addition, utilizing dry-etching to form under the situation of 1 filter pattern, can be with not needing the planarization layer of part and its below to remove, up to reaching semiconductor substrate by dry-etching.

Because the rough surface during dry-etching, has the tendency of residue of the filter pattern resist of other colors that behind dry-etching, form at the planarization layer remained on surface.The distance of these residues and the components of photo-electric conversion is near more, and is possible more as noise or defective effect picture element, is undesirable.By planarization layer is all removed, will be directly arranged on the semiconductor substrate by the filter pattern that photoetching forms, can prevent the generation of this residue.Particularly, can when dry-etching, carry out etching, make not residual planarization layer below the filter pattern that forms with photoetching up to planarization layer is all removed.

In the manufacture method of the solid-state imager that the of the present invention the 1st and the 2nd above technical scheme relates to, can utilize dry-etching to form the filter pattern of the area maximum in the filter pattern of a plurality of colors.

This is because if utilize dry-etching that the filter pattern of area maximum is carried out composition, can keep utilizing the filter pattern of photoetching formation effectively, and the precision of the filter pattern of area maximum is bigger to the precision influence of colour filter integral body.

In addition, be under the situation of sandwich construction at the filter pattern, if be located at the filter pattern of lower floor's (approaching semiconductor substrate one side), then also be effective with the dry-etching setting.

In addition, can make the color-filter layer that utilizes the dry-etching composition comprise the resin with curable at least, the color-filter layer that carries out composition by photoetching comprises the resin with photo-curable at least.

Owing to utilize the pattern filter pattern that form, that comprise resin with Thermocurable of dry-etching, connect airtight securely on semiconductor substrate or planarization layer, so peeling off of filter pattern can not taken place with regulation.In addition, the color-filter layer that comprises the resin with Thermocurable can improve the concentration of the coloured material that wherein contains, so can make colour filter thinner, can prevent the colour mixture of incident light, can realize the slimming of solid-state imager.

The feature of the solid-state imager that the 3rd technical scheme of the present invention relates to is that the filter pattern of a plurality of colors comprises 1 filter pattern of the resin that contains hot curing and contains other filter patterns of the resin of photocuring.

In the solid-state imager that constitutes like this, because colour filter has the color filter pattern of the resin that contains hot curing, so even without planarization layer, also good with the connecting airtight property of semiconductor substrate, therefore, be formed directly on the semiconductor substrate by not forming planarization layer, can access the less solid-state imager of distance under the lens.Particularly, owing to use heat-curing resin, so can improve the concentration of the coloured material in the solid formation branch, so can form colour filter thinner, can prevent the colour mixture of incident light, the distance that also can access the colour filter and the components of photo-electric conversion thus is less, the solid-state imager that distance is less, sensitivity is good under the lenticule.In addition, it is even to eliminate the irregular colour that the shape by the pattern edge of colour filter causes.

In addition, can be, the filter pattern of a plurality of colors comprises the green filters pattern, and the resin that contains in this green filters pattern has than the high refractive index of resin that contains in other filter patterns.By like this, the refractive index of the filter pattern of a plurality of colors is similar to, lenticular spotlight effect is equated, obtain good solid-state imager.

And then, because the higher resin of refractive index has the low tendency of etch-rate, so, can access the filter pattern of surface smoothing by utilizing dry-etching to come composition to add the layer of the higher resin of refractive index.

In addition,, can on colour filter, form planarization layer, on this planarization layer, form lenticule in order to eliminate the concavo-convex of colour filter surface.

And then, can on colour filter, form lenticule, and the part by colour filter, be that the top of colour filter constitutes this lenticular periphery, is lenticular bottom.By making such structure, can reduce distance under the lenticule, can access the good solid-state imager of sensitivity.

The feature of the solid-state imager that the 4th technical scheme of the present invention relates to is, the filter pattern of the area maximum in the filter pattern of a plurality of colors contains the resin of hot curing, and other filter patterns contain light-cured resin.

In the solid-state imager that constitutes like this, because the filter pattern of area maximum contains the resin of hot curing, so can keep connecting airtight property with semiconductor substrate effectively.In addition, owing to can eliminate planarization layer, can access the less solid-state imager of distance under the lens.Particularly, owing to use the resin of hot curing, so can improve the concentration of the coloured material in the solid formation branch, so colour filter can be formed than unfertile land, can prevent the colour mixture of incident light, the distance that also can access the colour filter and the components of photo-electric conversion thus is less, the solid-state imager that distance is less, sensitivity is good under the lenticule.In addition, it is even to eliminate the irregular colour that the shape by the pattern edge of colour filter causes.

If on semiconductor substrate, directly form the filter pattern with light-cured resin (photoresist), then photoresist does not have and semiconductor substrate connecting airtight property fully, when developing, produce the problem of peeling off, but in the solid-state imager that the of the present invention the 3rd and the 4th technical scheme relates to, because the filter pattern with hot curing is adjacent, the effect of the pattern of this hot curing performance anchor is so can prevent the coming off of filter pattern of photocuring.Therefore, planarization layer can be set and just directly form colour filter on semiconductor substrate.Thereby, can reduce the distance of the colour filter and the components of photo-electric conversion and the distance of the lenticule and the components of photo-electric conversion.

The feature of the solid-state imager that the 5th technical scheme of the present invention relates to is that in the planarization layer below the filter pattern of a plurality of colors, the below part of the filter pattern of 1 color is different with the below segment thickness of the filter pattern of other colors.

In the solid-state imager that constitutes like this,, can provide the solid-state imager that possesses the uniform colour filter of surface thickness by be absorbed in thickness different between the filter pattern with planarization layer.

In such solid-state imager, can make the filter pattern of a plurality of colors comprise the green filters pattern, the refractive index ratio that is included in the resin in this green filters pattern is included in the resin height in other filter patterns.

Like this, by the resin height that contains in other filter patterns of refractive index ratio that make the resin that in the green filters pattern, contains, make the refractive index between the filter pattern approximate, can access lenticular spotlight effect identical solid-state imager on each colour filter.

And then, because the higher resin of refractive index has the lower tendency of etch-rate, so, can access the filter pattern of surface smoothing by utilizing dry-etching that the layer that has added the higher resin of refractive index is carried out composition.

In addition, can constitute, also possess the lenticule that sets corresponding to each components of photo-electric conversion directly or indirectly on colour filter, this lenticular periphery (bottom) is made of the part (top) of colour filter.

Like this, by the part of lenticular periphery with colour filter constituted, can access the less solid-state imager of distance under the lenticule.

The feature of the solid-state imager that the 6th technical scheme of the present invention relates to is, colour filter comprises across planarization layer and is formed on the filter pattern on the semiconductor substrate and is formed directly into filter pattern on the semiconductor substrate.

In the solid-state imager that constitutes like this, by be absorbed in thickness different between the filter pattern with planarization layer, possesses the uniform colour filter of surface thickness, and, can provide the less solid-state imager of distance of the colour filter and the components of photo-electric conversion by planarization layer closely is arranged on minimal desired area.

The feature of the solid-state imager that the 7th technical scheme of the present invention relates to is, the filter pattern of 1 color in the filter pattern of a plurality of colors contains the resin of hot curing, and the filter pattern of remaining color contains the resin of photocuring.

In the solid-state imager that constitutes like this, connect airtight securely on semiconductor substrate or planarization layer owing to contain the filter pattern of the resin of hot curing, so peeling off of filter pattern can not taken place.In addition, can improve the concentration of the coloured material that wherein comprises,, can prevent the colour mixture of incident light, can realize the slimming of solid-state imager so can make colour filter thinner owing to contain the colour filter photoresist of resin with Thermocurable.

Below, explain of the present invention various execution modes based on the various technical schemes of the present invention of above explanation.

At first, two kinds of filter pattern formation methods using are in the present invention described.

The formation method of utilizing dry-etching to carry out composition of Shi Yonging is in the present invention, on the object cambium layer, form the resin pattern of object shape, it is carried out dry-etching as mask, the object shape transferred thereon is carried out the method for composition to the object cambium layer.Particularly, shown in Figure 1A～Fig. 1 E, on base material 31, form color-filter layer 32 (Figure 1A) as the object cambium layer, on color-filter layer 32, form photo-sensitive resin 33 (Figure 1B), then with these photo-sensitive resin 33 compositions, forming the resin pattern 34 (Fig. 1 C) of object shape, is mask with this resin pattern 34, with the shape transferred thereon (Fig. 1 D) to color-filter layer 32 of resin pattern 34, the final filter pattern 35 (Fig. 1 E) that forms as object.

The formation method of utilizing photoetching to carry out composition of Shi Yonging is meant following method in the present invention, promptly, form and to have photosensitive object cambium layer, by mask it is carried out pattern exposure, carry out photocuring, and develop, will not need part to remove, obtain the object behind the composition.Particularly, shown in Fig. 2 A～Fig. 2 C, on base material 41, utilize photosensitive resin composition to form as the cambial color-filter layer 42 of object, by mask (not shown) it is carried out making its curing (Fig. 2 B) behind the pattern exposure, to not need part 42b to remove and stay the 42a of photocuring portion with developer solution, be heating and curing as required, form filter pattern 43 (Fig. 2 C) as object.

Fig. 3 is the phantom of the solid-state imager that relates to of one embodiment of the present invention.Fig. 4 A～Fig. 4 G is the cutaway view according to the manufacture method of process sequence explanation solid-state imager shown in Figure 3.Fig. 5 is the vertical view of Fig. 3.

The solid-state imager that one embodiment of the present invention relates to as shown in Figure 3, on the semiconductor substrate 10 that possesses the components of photo-electric conversion 11 two-dimensional arrangement, that have the function that light is transformed to the signal of telecommunication, comprise to incident light carry out colour filter 12 that look decomposes, with the planarization layer 13 of the flattening surface of this colour filter 12 and be configured in a plurality of lenticules 14 on this planarization layer 13.In addition, planarization layer 13 according to circumstances can not be provided with yet.

Such solid-state imager can be by the method manufacturing shown in Fig. 4 A～Fig. 4 G.

At first, on the semiconductor substrate 20 (with reference to Fig. 4 A) of the components of photo-electric conversion 21, shown in Fig. 4 B, form the 1st colourama blocking layer 22 with two-dimensional arrangement.The 1st colourama blocking layer 22 is that the 1st resin dispersion liquid that will be principal component with the heat-curing resin, be dispersed with pigment is coated on the semiconductor substrate 20, carries out hot curing and forms.

Then, on the 1st colourama blocking layer 22, shown in Fig. 4 C, form the resin pattern 23 of regulation by for example photoetching.As resin pattern 23, can with third rare class for example, epoxies, polyimide, phenolic aldehyde epoxies, other have photosensitive resin individually or multiple mixing or copolymerization use.As the exposure machine that in the photoetching process of composition photoresist, uses, there are step printing device, aligning exposer, direct reflection to aim at exposer etc., but when forming the colour filter of the solid-state imager that needs high pixelation, miniaturization, use the step printing device usually.

Then, use this resin pattern 23, utilize dry-etching, shown in Fig. 4 D, form the 1st filter pattern 24a the 1st colourama blocking layer 22 compositions as mask.As the method for dry-etching, can use RIE of for example ECR, parallel flat magnetron, DRM, ICP or double frequency type etc.

The gas that uses in dry-etching is so long as to have reactivity gas (oxidizability, reproducibility), that be etching just passable, for example can use the gas that in its molecular configuration, contains the halogens of fluorine, chlorine, bromine etc., the same gas that in its molecular configuration, contains aerobic or element sulphur etc., but be not limited to these.

Then, on whole, form after the 2nd colourama blocking layer,, perhaps, shown in Fig. 4 E, form the 2nd filter pattern 24b by photoetching composition the 2nd colourama blocking layer by similarly carrying out dry-etching with the 1st filter pattern 24a.

Then, on whole, form after the 3rd colourama blocking layer, utilize photoetching composition the 3rd colourama blocking layer, form the 3rd filter pattern (not shown), form the colour filter 25 that constitutes by the 1st, the 2nd and the 3rd filter pattern.

The vertical view of the arrangement of each filter pattern of expression colour filter 25 among Fig. 5.Arrangement shown in Figure 5 be every a pixel G (green) filter is set, so-called Baeyer that R (redness) filter and B (blueness) filter be set between the G filter in every line arranges.The cutaway view that A-A ' among Fig. 5 locates is Fig. 3.

Then, shown in Fig. 4 F, on above such colour filter that forms 25, form planarization layer 26.As planarization layer, can use one or more the resin of resin that comprises third rare class, epoxies, polyimide, phenolic aldehyde epoxies, polyesters, polyurethanes, melamine class, urea class, phenylethylene etc.In addition, this planarization layer 26 can not be provided with yet.

At last, shown in Fig. 4 G, on planarization layer 26, utilize heat reflow method to form lenticule 27, finish solid-state imager as known techniques.

In the manufacture method of the solid-state imager of above explanation, the 1st filter pattern 24a is after making the 22 complete hot curings of the 1st colourama blocking layer, by forming with the dry-etching composition, so very strong with the connecting airtight property of semiconductor substrate 20.By the 1st good filter pattern 24a of such connecting airtight property of setting, even utilize photoetching to form the 2nd and the 3rd filter pattern, because the 2nd and the 3rd filter pattern is kept by the 1st adjacent filter pattern 24a, the connecting airtight property of colour filter 25 also becomes well on the whole.Therefore, can planarization layer be set and be formed directly on the semiconductor substrate 20.

In the case, the 1st filter pattern 24a preferably makes the area maximum in a plurality of color filter pattern.By like this, can make the connecting airtight property with semiconductor substrate become more firm.The area of the filter pattern of area maximum for example can be made as 1～2 times of area of the filter pattern of area minimum.In addition, by carry out the filter pattern that composition forms the area maximum with dry-etching, correctly composition takies the filter pattern of maximum area, and the precision of colour filter integral body improves.Particularly, it is more that the green filters pattern has the situation of maximum area.

In addition, by come composition to form the less color-filter layer of containing ratio of pigment concentration resin high, i.e. that participation is solidified with the formation method of dry-etching composition, solidify inadequate color-filter layer even in common photoetching process, become, also can be accurately, do not have residue and formation with peeling off.In addition, if the higher colour filter of pigment concentration forms with photoetching process, then the edge shape of filter can become bad, and it is inhomogeneous to become image, if form pattern with dry-etching, then third edge pattern becomes well, and is can removal of images inhomogeneous.Particularly, under the situation of red filter pattern or green filters pattern, have that effect.

In addition, be under the situation of microsize (particularly below the size 2.5 μ m) in the size of colour filter, preferably utilize dry-etching to form colour filter.That is, small if the size of colour filter becomes in common photoetching process, then the edge shape of filter is understood variation, and it is inhomogeneous to become image, and by using dry-etching, it is good that edge shape becomes.In addition, if shape forms the colour filter of the 1st color well, then the shape of the later colour filter of the 2nd color also becomes well difficult peeling off.

Perhaps, with the formation method of carrying out composition by dry-etching, come composition to form that the transmitance of the exposure wavelength that uses in the composition because of photoetching is lower exposes insufficient and the reduction of exploring degree or the color-filter layer that peels off take place, thus, even in common photoetching process, solidify inadequate color-filter layer, also can be accurately, do not have residue and formation with peeling off.Particularly under the situation of blue filter pattern, have that effect.

No matter according to any reason, if utilizing has used the composition method of dry-etching to form initial filter pattern, can both become and connect airtight on the substrate of lower floor, do not have residue and peel off, and the filter pattern that the exploring degree is higher, then, used operation less and photolithographic composition method that efficient is higher forms next filter pattern if utilize, then because the initial filter pattern that forms is correct pattern, and connect airtight securely on substrate, even so used photolithographic composition method, can correctly form does not have the filter pattern that peels off yet.

For example, when forming filter, use the step printing device of the optical wavelength of exposure light as 365nm with photoetching process.Under the situation of blue filter, because the exposure light of 365nm is difficult to enter into the bottom of blue photoresist, so the bottom of blue photoresist is not fully solidified, we can say at developing procedure Smalt filter and peel off than the filter of other colors is easier.

In the present invention, if form the good pattern of shape and connecting airtight property (particularly green pattern) at first, even then utilize photoetching process to form the such relatively poor pattern of connecting airtight property of blue filter, because green pattern keeps blue filter, so also can improve the peeling off of blue filter, shape defect.Usually, the color alignment of imaging apparatus is that Baeyer shown in Figure 5 is arranged, will be in two green pixels and 1 blueness, 1 redness amount to 4 pixels as 1 unit of cells.Therefore, if form green filters with dry-etching, then green filters can support other two colors, can improve the shape of other two colors, connecting airtight property.

Present inventors directly adhere on the test pattern substrate and across planarization layer, form the green pattern of various Pixel Dimensions with photolithographicallpatterned and etching mode, have estimated their connecting airtight property, having or not of peeling off.Its result is represented in following table.

In addition, metewand is as described below.

Zero: do not have and peel off

△: have some to peel off

*: there is not the pixel of connecting airtight

[table 1]

The evaluation of connecting airtight property of table 1

By above-mentioned table as can be known, if utilize photolithographicallpatterned, then under the situation of directly adhering on the substrate, Pixel Dimensions come what may all can not find the pixel of connecting airtight, 2.0 μ m are limit under situation about forming across planarization layer, can peel off under the Pixel Dimensions of 1.5 μ m.In contrast to this, if utilize photolithographicallpatterned, no matter we find under the situation of directly adhering on the substrate or under the situation that planarization layer forms up to 1.0 μ m Pixel Dimensions and do not peel off.

By these results as can be known, if with etching mode form the 1st color the filter pattern, form the later filter pattern of the 2nd color with photolithographicallpatterned, filter pattern by the 1st good color of connecting airtight property keeps the later filter pattern of the 2nd color, so can access the good colour filter of connecting airtight property on the whole.

In addition, Figure 10 and Figure 11 are illustrated in the microphotograph of the green pattern of the various Pixel Dimensions that form across planarization layer on the test pattern substrate.Figure 10 represents to utilize the pattern of photolithographicallpatterned formation, and Figure 11 represents to utilize the pattern of etching mode formation.In photolithographicallpatterned, shown in the mark B of Figure 10, when 1.5 μ m Pixel Dimensions, taken place to peel off, in contrast to this, in etching mode, as shown in figure 11, up to the pixel of 1.0 μ m, do not peel off fully as can be known yet.

Shape when then, present inventors have observed the green pattern that utilizes photolithographicallpatterned and etching mode to form rectangle on glass substrate.Figure 12 and Figure 13 represent it is to utilize photolithographicallpatterned microphotograph that form, that be respectively the green pattern of 1.5 μ m Pixel Dimensions and 2.0 μ m Pixel Dimensions, and Figure 14 represents to utilize the microphotograph of the green pattern of the 2.0 μ m Pixel Dimensions that etching mode forms.By Figure 12～Figure 14 as can be known, the shape defect (special shown in the mark C of Figure 12) that utilizes the green pattern that photolithographicallpatterned forms obviously, with respect to this, the shape of the green pattern that forms with etching mode is good.

If the formation method with dry-etching forms the filter pattern continuously, the problem that then has the color-filter layer that forms after concavo-convex can the influence of the initial filter pattern that forms, so preferably will 1 initial color under the situation of the colour filter that constitutes by 3 colors, under the situation of the colour filter that constitutes by 4 colors, 1 initial color or initial 1 color and the 2nd color are passed through the dry etching method composition, remaining color is utilized the photoetching method composition.

In addition, the resin that is included in the green filters pattern is had than the high refractive index of resin in the filter pattern that is included in blueness and redness.In the past, the refractive index of other filter patterns of the refractive index ratio of green filters pattern was low, so there is the uneven problem of the reflectivity of colour filter.In order to improve the refractive index of green filters pattern,, but,, be difficult to the higher resin of selective refraction rate so the resin choice scope is narrower owing to be used for the restriction of photoetching as long as use the higher resin of refractive index just passable.

With respect to this, in the method for relevant present embodiment, because do not rely on photoetching process but can be enough dry-etching form the green filters pattern, so as the resin of green filters pattern, can be from heat-curing resin the higher resin of more ground selective refraction rate.

Like this, by the resin that is included in the green filters pattern is had than the high refractive index of resin in the filter pattern that is included in blueness and redness, the refractive index of the filter pattern of 3 colors is similar to, can make lenticular spotlight effect become identical thus, so can access good solid-state imager.

And then, because the higher resin of refractive index has the lower tendency of etch-rate, so, can access the filter pattern of surface smoothing by utilizing dry-etching to come composition to add the layer of the higher resin of refractive index.

In green filters pattern of the present invention, owing under the situation that becomes the filter pattern, can access equal refractive index, so the preferred resin that has than the refractive index of high 0.05～0.2 degree of refractive index that is included in the resin in blueness and the red filter pattern that uses.

In addition, as the resin in the filter pattern that is included in blueness and redness, can use third rare class with refractive index of 1.5～1.6, epoxies, polyimide, the phenolic aldehyde epoxies, polyesters, polyurethanes, melamine class, the urea class, the resin of phenylethylene etc., as the resin that is included in the green filters pattern, can use to comprise that one or more have third rare class of 1.55～1.7 refractive index, epoxies, polyimide, the phenolic aldehyde epoxies, polyesters, polyurethanes, melamine class, the urea class, the resin of phenylethylene and their copolymer etc.Particularly,, can use phenolic resins, polystyrene resin or import the polymer or the monomer of phenyl ring or aromatic ring, perhaps use third rare resin of base of in skeleton, having imported halogen radical or having had sulphur atom etc. in order to realize high index of refraction.

As another execution mode, as shown in Figure 6, can make on colour filter 25 and directly to form lenticule 27 and the boundary member of adjacent filter pattern is removed structure up to 0.03 μ m～0.5 μ m degree of depth from the surface.In such structure, lenticular periphery (bottom) is made of the part (top) of colour filter 25, so can reduce distance under the lenticule, can access the good solid-state imager of sensitivity.

Here, making the following 0.03 μ m that is limited to that removes the degree of depth of the boundary member of adjacent filter pattern is because this value is by the actual minimum values that can discern thickness such as SEM or AFM, in addition, make the reason that is limited to 0.5 μ m be, if form the step difference that surpasses 0.5 μ m, then can make the film rough surface, produce the surface sensitivity reduction that brings at random.Moreover this is because in surpassing the step difference of 0.5 μ m, the thickness of actual colour filter thickening sometimes can depart from the filming as one of problem of the present invention to for example more than the 1 μ m.

Fig. 7 is the phantom of the solid-state imager that relates to of another embodiment of the invention.Fig. 8 A～Fig. 8 I is the phantom according to the manufacture method of process sequence explanation solid-state imager shown in Figure 7.Fig. 7 is a vertical view, and is same with Fig. 5.

Solid-state imager shown in Figure 7 is possessing two-dimensional arrangement, is having on the semiconductor substrate 50 of the components of photo-electric conversion 51 of the function that light is transformed to the signal of telecommunication, comprises planarization layer 52 with step difference, is formed on this planarization layer 52 and incident light is carried out the colour filter 53 that color decomposes and is configured in a plurality of lenticules 54 on this colour filter 52.

Such solid-state imager can be by the method manufacturing shown in Fig. 8 A～Fig. 8 I.

At first, on the semiconductor substrate 60 (with reference to Fig. 8 A) of the components of photo-electric conversion 61, shown in Fig. 8 B, form the 1st planarization layer 62 with two-dimensional arrangement.As the 1st planarization layer, can use the resin of resins such as containing one or more third rare classes, epoxies, polyimide, phenolic aldehyde epoxies, polyesters, polyurethanes, melamine class, urea class, phenylethylene.

Then, shown in Fig. 8 C, on the 1st planarization layer 62, form green light blocking layer 63.Green light blocking layer 63 is to be coated on the planarization layer 62 and to carry out hot curing by the resin dispersion liquid that will be principal component with the heat-curing resin, be dispersed with viridine green to form.

Then, on this green light blocking layer 62, for example by photoetching, land productivity forms the resin pattern 64 of regulation with photoetching process shown in Fig. 8 D.As resin pattern 64, can be with for example third rare class, epoxies, polyimide, phenolic aldehyde epoxies, other have the independent or multiple mixing of photosensitive resin or copolymerization is used.As the exposure machine that in photoetching process, uses with the photoresist composition, the equipment that illustrates in the operation shown in Fig. 4 C that can use at above-mentioned execution mode.

Then, use this resin pattern 64, utilize dry-etching composition green light blocking layer 63, shown in Fig. 8 E, form green filters pattern 65a as mask.At this moment, will not need the green light blocking layer of part to remove, and will not need the planarization layer top of the bottom of green light blocking layer partly to remove.

As dry-etching, can use RIE of for example ECR, parallel flat magnetron, DRM, ICP or double frequency type etc.

The gas that uses in dry-etching is so long as to have reactivity gas (oxidizability, reproducibility), that be etching just passable, can use the gas that for example in its structure, has the halogens of fluorine, chlorine, bromine etc., the same gas that in its structure, has oxygen or element sulphur etc., but be not limited to these.

Then, utilize photoetching to form blue filter pattern 65b and red filter pattern (not shown), shown in Fig. 8 F, form the colour filter 66 that constitutes by filter pattern green, Lan Jihong.

The vertical view of the arrangement of each filter pattern of expression colour filter 66 among Fig. 5.Arrangement shown in Figure 5 be every a pixel G (green) filter is set, so-called Baeyer that R (redness) filter and B (blueness) filter be set between the G filter in every line arranges.The cutaway view of A-A ' of Fig. 5 is Fig. 7.

Then, shown in Fig. 8 G, on above such colour filter that forms 66, form the 2nd planarization layer 67.As the 2nd planarization layer, same with the 1st planarization layer, can use the resin of resins such as containing one or more third rare classes, epoxies, polyimide, phenolic aldehyde epoxies, polyesters, polyurethanes, melamine class, urea class, phenylethylene.

Then, shown in Fig. 8 H, on the 2nd planarization layer 67, utilize heat reflow method to form lens master mold 68 as known techniques.As lens master mold 68 preferred photoresists, can use the resin with alkali-soluble and hot reflux of third rare resin or phenolic resins, polystyrene resin etc.

At last, use lens master mold 68 to carry out dry-etching and handle, on shape transferred thereon to the 2 planarization layers 67 with lens master mold 68, form lenticule 69 as mask.At this moment, remove the degree of depth that goes to 0.03 μ m～0.5 μ m, shown in Fig. 8 I, finished the solid-state imager that lenticular bottom is made of the top of colour filter from the boundary member surface of each pattern of colour filter 66.

In the manufacture method of the solid-state imager of above explanation, green filters pattern 65a utilizes dry-etching to carry out composition after making the 63 complete hot curings of green light blocking layer and forms, thus after the developing procedure of photoetching in can not pixel to take place damaged.

In the embodiment described above, green filters pattern 65a is preferably the area maximum.By like this, can make the connecting airtight property with substrate become more firm, can prevent more effectively that pixel is damaged.The area of the green filters pattern of area maximum for example can be made as 1～2 times of area of the filter pattern of area minimum.In addition, use the formation method of utilizing dry-etching to carry out composition to form the filter pattern of area maximum, correctly composition takies the filter pattern of maximum area, and the precision of colour filter integral body improves.Particularly, the situation of the area maximum of green filters pattern is more.

In addition, the method that forms of composition is carried out in utilization by dry-etching, come composition to form the less color-filter layer of containing ratio of the resin that pigment concentration is higher, i.e. participation is solidified, even in common photoetching process, solidify inadequate color-filter layer thus, also can be accurately, do not have residue and formation with peeling off.Particularly, under the situation of red filter pattern or blue filter pattern, have that effect.

Perhaps, the method that forms of composition is carried out in utilization by dry-etching, come composition to form that transmitance because of the exposure wavelength that uses is lower exposes insufficient and the reduction of exploring degree and the color-filter layer that peels off have taken place in the composition of photoetching, even in common photoetching process, solidify the inadequate color-filter layer that becomes, also can high accuracy, do not have residue and formation with peeling off.Particularly, under the situation of blue filter pattern, have that effect.

No matter according to which reason, if the formation method with dry-etching forms initial pattern, then become and connect airtight on the substrate of lower floor, do not have residue and peel off and filter pattern that the exploring degree is higher, if then utilize operation less and formation method efficient photoetching preferably forms next filter pattern, then because the initial filter pattern that forms is correct pattern, and connect airtight on substrate securely, so in the formation method of photoetching, also can correctly form the filter pattern that does not peel off.

If the formation method with dry-etching forms the filter pattern continuously, the concavo-convex problem that has influence on the color-filter layer that forms later that the filter pattern of initial formation is then arranged, so it is preferred under the situation of the colour filter that constitutes by 3 colors, with 1 initial color of the method composition of dry-etching, under the situation of the colour filter that constitutes by 4 colors, with the method composition of dry-etching initial 1 color or initial and the 2nd color, remaining color is carried out composition with photoetching method.

In addition, can make the resin that is included in the green filters pattern have the high refractive index of resin that contains than in the blue and red filter pattern.In the past, the refractive index of other filter patterns of the refractive index ratio of green filters pattern was low, so there is the uneven problem of the reflectivity of colour filter.In order to improve the refractive index of green filters pattern,, but,, be difficult to the higher resin of selective refraction rate so the scope of resin choice is narrower owing to be subjected to being used for the restriction of photoetching as long as use the higher resin of refractive index just passable.

With respect to this, unfavorable with photoetching but utilize dry-etching to form photoengraving pattern in the present embodiment, so as the resin of green filters pattern, can be from heat-curing resin the higher resin of more ground selective refraction rate.

Like this, the resin that is included in the green filters pattern is had than the high refractive index of resin in the blue and red filter pattern, the refractive index of the filter pattern of 3 colors is similar to, can make lenticular spotlight effect identical thus, so can access good solid-state imager.

And then, because the higher resin of refractive index has the lower tendency of etch-rate, so, come composition to add the layer of the higher resin of refractive index by utilizing dry-etching, can access the filter pattern of surface smoothing.

In green filters pattern of the present invention, owing under the situation that becomes the filter pattern, can access identical refractive index, so the preferred resin that has than the refractive index of high 0.05～0.2 degree of refractive index that is included in the resin in blueness and the red filter pattern that uses.

In addition, as the resin in the filter pattern that is included in blueness and redness, can use third rare class with refractive index of 1.5～1.6, epoxies, polyimide, the phenolic aldehyde epoxies, polyesters, polyurethanes, melamine class, the urea class, the resin of phenylethylene etc., as the resin that is included in the green filters pattern, can use to comprise that one or more have third rare class of 1.55～1.7 refractive index, epoxies, polyimide, the phenolic aldehyde epoxies, polyesters, polyurethanes, melamine class, the urea class, the resin of phenylethylene and their copolymer etc.Particularly, in order to realize high index of refraction, can use phenolic resins, polystyrene resin or import the polymer of phenyl ring or aromatic ring or monomer or use the third rare resin that in skeleton, has imported halogen radical or had the base etc. of sulphur atom.

In addition, form in the operation at lenticule, shown in Fig. 8 I, the boundary member of adjacent filter pattern is removed the degree of depth that goes to 0.03 μ m～0.5 μ m from the surface, part by colour filter 26 constitutes lenticular periphery, so can reduce distance under the lenticule, can access the good solid-state imager of sensitivity.

Here, make the reason that is limited to 0.03 μ m under the degree of depth of removing of the boundary member of adjacent filter pattern be, this value is by the actual minimum values that can discern thickness such as SEM or AFM, in addition, make the reason that is limited to 0.5 μ m be, if surpass 0.5 μ m, then film rough surface, the sensitivity that brings at random of generation surface reduce.Further, if surpass 0.5 μ m, the thickness of actual colour filter thickening sometimes can depart from the filming as one of problem of the present invention to for example more than the 1 μ m.

Below, various embodiment of the present invention is shown, be described more specifically the present invention.

Embodiment 1:

With reference to Fig. 4 A～Fig. 4 G, the manufacture method of the solid-state imager that present embodiment relates to is described.

On the semiconductor substrate 20 of the such components of photo-electric conversion that possess two-dimensional arrangement 21 of Fig. 4 A, behind the green photoresist of the rotating speed spin coated pigment dispersing of 1000rpm, toasted 6 minutes down at 230 ℃, shown in Fig. 4 B, form green light blocking layer 22.At this moment, in viridine green, use C.I.PG36 in color table, its pigment concentration is 35 weight %, and thickness is 0.6 μ m.In addition, as the resin of the main component of green photoresist, use third rare resinoid of thermohardening type.

Then, on green light blocking layer 22, with the rotating speed spin coated of 3000rpm with third rare class photosensitive resin coating liquid that is principal component after, carry out composition by photoetching, shown in Fig. 4 C, form resin pattern 23.Then, use this resin pattern 23, utilize the dry-etching device to use fluon class gas that green light blocking layer 22 is carried out etch processes, shown in Fig. 4 D, form green filters pattern 24a as mask.The thickness of the green filters pattern 24a of this moment is 0.8 μ m.

Then, use the blue photoresist of pigment dispersing, 24a similarly utilizes the patterning process that has used dry-etching with the green filters pattern, shown in Fig. 4 E, forms blue filter pattern 24b.At this moment, the pigment that uses in blue photoresist is respectively C.I.PB156, the C.I.PV23 in the color table, and pigment concentration is 40 weight %, and thickness is 0.8 μ m.In addition, as the resin of the principal component of blue photoresist, use third rare resinoid of thermohardening type.

Then, use the red photoresist of pigment dispersing, utilize photoetching to form red filter pattern (not shown), obtain colour filter 25.At this moment, the pigment that uses in red photoresist is respectively C.I.PR117, C.I.PR48:1, the C.I.PY139 in the color table, and pigment concentration is 45 weight %, and thickness is 0.8 μ m.

And then, on the colour filter 25 that forms like this, contain the coating liquid of third rare resin with rotating speed 1000rpm spin coated, 200 ℃ of heat treatments of implementing 10 minutes down,, shown in Fig. 4 F, form planarization layer 26 by hot plate with resin solidification.

At last, shown in Fig. 4 G, on planarization layer 26, utilize heat reflow method to form lenticule 27, finish solid-state imager as known techniques.

The solid-state imager that more than obtains is formed directly on the surface of semiconductor substrate 20 owing to colour filter 25, and use heat-curing resin and can improve the concentration of the coloured material of solid formation in dividing, so colour filter 25 can be formed than unfertile land, therefore, lens distance down are less, are the elements with good sensitivity.In addition, it is even can not result from the irregular colour of shape of pattern etching of colour filter.

In the present embodiment, as the green photoresist of the shape transferred thereon technology formation that utilizes dry-etching and the principal component of blue photoresist, use third rare resin of thermohardening type, but be not confined to third rare resin especially, can use one or more resin of the resin that contains epoxy resin, polyimide resin, novolac epoxy resin, mylar, polyurethane resin, melmac, urea resin, styrene resin and their copolymer etc. yet.

And then, by in green photoresist, using the resin of high index of refraction, the refractive index of green filters pattern, red filter pattern and blue filter pattern is set at same degree, can reduces surface reflection, can access the good solid-state imager of sensitivity.

In addition, in the present embodiment, the composition technology that use utilizes dry-etching to carry out forms green filters pattern and blue filter pattern, utilize photoetching to form red filter pattern, but also can only the green filters pattern be utilized the composition technology of dry-etching to form, and red filter pattern and blue filter pattern are formed with photoetching.As long as the filter pattern that forms is that the filter pattern that utilizes dry-etching, forms at last utilizes photoetching formation just passable at first.But, because green filters pattern and blue filter pattern peel off easily than red filter pattern in photoetching process, so the composition technology formation that more preferably utilizes use dry-etching technology to carry out.

Moreover, in the present embodiment, utilize heat reflow method to form lenticule, but more preferably use the composition technology of the dry-etching that the thickness under the lenticule can be formed thinner to form lenticule.This be form finally as lenticular transparent resin layer on the colour filter, utilize above it heat reflow method form lenticular master mold (lens master mold), with the lens master mold as mask, method by dry-etching with the method for lens master mold shape transferred thereon to the transparent resin layer.At this moment, adjusting by the etching speed that carries out according to the selection of the height of the lens master mold that in the transfer printing of lens shape, uses and material etc., in the scope of 0.03 μ m～0.5 μ m, the boundary member of adjacent filter pattern is removed from the surface, part by colour filter constitutes lenticular periphery, can further reduce distance under the lens, so be preferred.

In addition, in the present embodiment, adopted third rare resin of thermohardening type, but also can use third rare resin with the same radiation-curing (photocuring) of the resin that in red photoresist and blue photoresist, uses as the resin of green photoresist.In the case, preferably reduce the monomer of needs or the amount that photopolymerization begins agent, more preferably same resin material with the resin of thermohardening type for filming.In the case, become be not suitable for exposing, the resin material of developing process.

Embodiment 2:

With reference to Fig. 8 A～Fig. 8 I, the manufacture method of the solid-state imager of relevant present embodiment is described.

On the semiconductor substrate 60 of Fig. 8 A components of photo-electric conversion 61 such, that possess two-dimensional arrangement, after being the coating liquid of principal component with the rotating speed spin coated of 2000rpm with third rare resinoid, toasted 6 minutes down at 230 ℃, shown in Fig. 8 B, form the 1st planarization layer 62.At this moment, the thickness of the 1st planarization layer 62 is 0.45 μ m.

Then, on the 1st planarization layer 62, behind the green photoresist of the rotating speed spin coated pigment dispersing of 1000rpm, toasted 6 minutes down, shown in Fig. 8 C, form green light blocking layer 63 at 230 ℃.At this moment, use C.I.PG36 in the color table in green pigment, its pigment concentration is 35 weight %, and thickness is 0.5 μ m.In addition, as the resin of green photoresist, use third rare class high refractive index resins of thermohardening type.Therefore, the refractive index of green light blocking layer 63 is 1.65.

Like this, by using third rare class high refractive index resins of thermohardening type,, can eliminate the induction agent that photopolymerization begins agent etc. though need thermal curing agents, and the photolithographic characteristics that does not need alkaline development characteristic and photo-curable etc. is so can improve pigment concentration.Even with the green filters filming, also can be made to green filters into the dichroism of expectation.

Then, behind the coating liquid that is principal component with the rotating speed spin coated of 3000rpm with third rare class photosensitive resin on the green light blocking layer 63, utilize photoetching to carry out composition, shown in Fig. 8 D, form transparent resin pattern 64.At this moment, for the resin of the material of the obstruction that becomes resolution that can select not contain pigment etc. as the transparent resin of mask, so can height composition subtly.

Then, use this transparent resin pattern 64, utilize the dry-etching device and use fluon class gas that green light blocking layer 23 is carried out etch processes, shown in Fig. 8 E, form green filters pattern 65a as mask.The thickness of green filters pattern 65a of this moment is 0.5 μ m because the 1st planarization layer 62 also removes a part, so and adjacent the 1st planarization layer 62 between form the step difference of 0.4 μ m.

Then,, shown in Fig. 8 F, form blue filter pattern 65b and red filter pattern (not shown) successively, obtain colour filter 66 by photoetching.At this moment, the pigment that uses in blue photoresist is respectively C.I.PB15:6, the C.I.PV23 in the color table, pigment concentration is 30 weight %, thickness is 0.9 μ m, refractive index is 1.64, and the pigment that uses in red photoresist is respectively C.I.PR117, C.I.PR48:1, the C.I.PY139 in the color table, and pigment concentration is 40 weight %, thickness is 0.9 μ m, and refractive index is 1.69.

And then, on the colour filter 66 that forms like this, contain the coating liquid of the resin that has added the UV absorbent with rotating speed 1000rpm spin coated, utilize hot plate 200 ℃ of heat treatments of implementing 10 minutes down, make resin solidification, shown in Fig. 8 G, form the 2nd planarization layer 67.

Then, shown in Fig. 8 H, on planarization layer 67, utilize heat reflow method to form the lens master mold 68 that constitutes by third rare resin with photonasty, hot reflux as known techniques.

At last, by the dry-etching device, use fluon class gas, and use lens master mold 68 to carry out etch processes, on shape transferred thereon to the 2 planarization layers 67 with lens master mold 68, form lenticule 69 as mask.At this moment, from the degree of depth that 0.2 μ m has been removed on the boundary member surface of each pattern of colour filter 66, shown in Fig. 8 I, finished solid-state imager.

In the manufacture method of above such solid-state imager, form green filters pattern 65a by the pattern formation method of using dry-etching, can be with good shape, no residue ground, pixel does not take place form the thickness of fine pattern with peeling off than the colour filter that approaches.In addition, owing in the green filters layer, use heat-curing resin,,, can access slim solid-state imager so colour filter can be formed than unfertile land so can improve the concentration of the coloured material in the solid formation branch.

In the present embodiment, as the green photoresist of the shape transferred thereon technology formation that utilizes dry-etching and the principal component of blue photoresist, used third rare resin of thermohardening type, but be not confined to third rare resin especially, can use one or more resin of the resin that contains epoxy resin, polyimide resin, novolac epoxy resin, mylar, polyurethane resin, melmac, urea resin, styrene resin and their copolymer etc. yet.

Particularly,, can use phenolic resins, polystyrene resin or import the polymer or the monomer of phenyl ring or directional ring, and can use halogen radical or sulfenyl etc. is imported to third rare resin in the skeleton of these polymer in order to realize high index of refraction.

Thus,, also high index of refraction can be realized, the good solid-state imager of sensitivity can be accessed compared in the green filters pattern that refractive index is lower, surface reflection is bigger with blue filter pattern and red filter pattern in the past.

In addition, in above embodiment, use the composition technology of dry-etching to form the green filters pattern, but also can use dry-etching to form blue filter pattern or the higher red filter pattern of pigment concentration that peels off easily by photoetching.But, be most important as the connecting airtight property and the pattern precision of the green filters pattern of the 1st color, so need utilize the shape transferred thereon technology of dry-etching technology to form the green filters pattern.In addition, also can form red filter pattern as the 2nd color that has formed behind the green filters pattern, but because the pigment concentration of red filter pattern is higher, so easy residual residue, so preferably the blue filter pattern is formed as the 2nd color.

In addition, in the present embodiment, on the 1st planarization layer 62 of the bottom that is provided in colour filter 66, be provided with the step difference of 0.4 μ m, but also can be by the adjusting of the etch-rate that undertaken by the selection of the thickness of the transparent resin pattern 64 of the master mold that forms as the green filters pattern and material, in the scope of 0.03 μ m～0.5 μ m with the 1st planarization layer etching.Here, make down be limited to 0.03 μ m be because it be by the actual minimum values that can discern thickness such as SEM and AFM, in addition, make be limited to 0.5 μ m be because, if the step difference that surpasses 0.5 μ m is set, the surface sensitivity that brings at random can take place and reduce in then film surface roughening.

And then, utilize dry-etching to form lenticule in the present embodiment, but also can utilize heat reflow method in the past to form lenticule.But, more preferably use the shape transferred thereon technology of dry-etching to form lenticule in order to make the thinner thickness under the lenticule.

Embodiment 3:

With reference to Fig. 8 A～Fig. 8 D and Fig. 9 A～Fig. 9 E, the manufacture method of the solid-state imager that present embodiment is related to describes.

On the semiconductor substrate 60 of Fig. 8 A components of photo-electric conversion 61 such, that possess two-dimensional arrangement, after being the coating liquid of principal component with the rotating speed spin coated of 2000rpm with third rare resinoid, toasted 6 minutes down at 230 ℃, shown in Fig. 8 B, form the 1st planarization layer 62.The thickness of the 1st planarization layer 62 of this moment is 0.4 μ m.

Then, on the 1st planarization layer 62, behind the green photoresist of the rotating speed spin coated pigment dispersing of 1000rpm, toasted 6 minutes down, shown in Fig. 8 C, form green light blocking layer 63 at 230 ℃.At this moment, use C.I.PG76 in the color table in viridine green, its pigment concentration is 40 weight %, and thickness is 0.5 μ m.In addition, as the resin of the principal component of green photoresist, use third rare class high refractive index resins of thermohardening type.Therefore, the refractive index of green light blocking layer 63 is 1.65.

Like this, by using third rare class high refractive index resins of thermohardening type, though need thermal curing agents, but can eliminate the induction agent that photopolymerization begins agent etc., and the photolithographic characteristics that does not need alkaline development characteristic and photo-curable etc., so can realize the filming of green filters by improving pigment concentration.

Then, behind the coating liquid that is principal component with the rotating speed spin coated of 3000rpm with third rare class photosensitive resin on the green light blocking layer 63, utilize photoetching to carry out composition, shown in Fig. 8 D, form transparent resin pattern 64.At this moment, for the resin of the material of the obstruction that becomes resolution that can select not contain pigment etc. as the transparent resin of mask, so can height composition subtly.

Then, use this transparent resin pattern 64, utilize the dry-etching device and use fluon class gas, shown in Fig. 9 A, form green filters pattern 65a green light blocking layer 23 etch processes as mask.The thickness of the green filters pattern 65a of this moment is 0.5 μ m, and the 1st planarization layer 62 that is covered by green filters pattern 65a is not fully removed.

Then, utilize photoetching, shown in Fig. 9 B, form blue filter pattern 65b and red filter pattern (not shown) successively, obtain colour filter 66.At this moment, the pigment that uses in blue photoresist is respectively C.I.PB15:6, the C.I.PV63 in the color table, pigment concentration is 30 weight %, thickness is 0.9 μ m, refractive index is 1.64, and the pigment that uses in red photoresist is respectively C.I.PR117, C.I.PR48:1, the C.I.PY139 in the color table, and pigment concentration is 40 weight %, thickness is 0.9 μ m, and refractive index is 1.69.

And then, on the colour filter 66 that forms like this, contain the coating liquid of the resin that has added the UV absorbent with rotating speed 1000rpm spin coated, 200 ℃ of heat treatments of implementing 10 minutes down, make resin solidification by hot plate, shown in Fig. 9 C, form the 2nd planarization layer 67.

Then, shown in Fig. 9 D, on planarization layer 67, utilize heat reflow method to form the lens master mold 68 that constitutes by third rare resin with photonasty, hot reflux as known techniques.

At last, utilize the dry-etching device, use fluon class gas, and use lens master mold 68 to carry out etch processes, on shape transferred thereon to the 2 planarization layers 67 with lens master mold 68, form lenticule 69 as mask.At this moment,, show, finished the top of colour filter solid-state imager as a lenticular part as Fig. 9 E from the degree of depth that 0.1 μ m has been removed on the boundary member surface of each pattern of colour filter 66.

In the manufacture method of above such solid-state imager, form green filters pattern 65a by the pattern formation method of using dry-etching, can be with good shape, no residue ground, pixel does not take place form the thickness of fine pattern with peeling off than the colour filter that approaches.In addition, owing in the green filters layer, use heat-curing resin,,, can access slim solid-state imager so colour filter can be formed than unfertile land so can improve the concentration of the coloured material in the solid formation branch.

In addition, in the present embodiment, the 1st planarization layer 62 that the bottom of the filter pattern that will form in the pattern formation method of utilizing photoetching sets is removed fully, but also can the 1st planarization layer be stayed by the adjusting of the etch-rate that undertaken by the selection of the thickness of the transparent resin pattern 64 of the master mold that forms as the green filters pattern and material.But the residue for the later color-filter layer of not residual the 2nd color is preferably fully and removes.

And then, in the present embodiment, utilize dry-etching to form lenticule, but also can utilize heat reflow method in the past to form lenticule.But, more preferably use the shape transferred thereon technology of dry-etching to form lenticule in order to make the thinner thickness under the lenticule.

In addition, the degree of depth of boundary member with adjacent color filter from surface etching to 0.1 μ m, part by colour filter constitutes lenticular periphery, but also can be by selecting material according to the selection of the height of lens master mold and material and according to layer structure, thickness and the etch-rate etc. of the layer of transfer printing lens shape, the degree of depth that setting is removed in the scope of 0.5 μ m at 0.03 μ m from the surface.Here, make down be limited to 0.03 μ m be because it be by the actual minimum values that can discern thickness such as SEM and AFM, in addition, make be limited to 0.5 μ m be because, if carry out dry-etching deeply than it, then lenticule surface roughening can cause that sensitivity reduces because of the surface is at random.

Claims (18)

1. A method of manufacturing a solid-state imaging device comprising a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, and a plurality of color sensors arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements. A color filter composed of a filter pattern, characterized in that The above filter patterns of a plurality of colors are formed by sequentially patterning a plurality of color filter layers; The manufacturing method has: A step of forming at least an initially formed filter pattern among the filter patterns of the plurality of colors by dry etching; The rest of the filter patterning process is formed by photolithography. 2. The method of claim 1, wherein: The filter pattern having the largest area among the filter patterns of the plurality of colors is formed by dry etching. 3. The method of claim 1, wherein: The color filter layer patterned by the above dry etching contains at least a thermosetting resin, and the color filter layer patterned by the above photolithography contains at least a photocurable resin. 4. A method of manufacturing a solid-state imaging device, the solid-state imaging device comprising photoelectric conversion elements two-dimensionally arranged on a semiconductor substrate, color filters arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements, and A part or all of the planarization layer formed on the semiconductor substrate, the color filter has filter patterns of a plurality of colors, and the method for manufacturing a solid-state imaging device is characterized in that The above filter patterns of a plurality of colors are formed by sequentially patterning a plurality of color filter layers; The manufacturing method has: A step of forming at least one initially formed filter pattern among the filter patterns of the plurality of colors by dry etching an unnecessary portion of one color filter layer and a planarization layer therebelow; Process for forming other filter patterns by photolithography. 5. The manufacturing method according to claim 4, characterized in that, In the step of forming the above-mentioned one filter pattern, the following cases are included: leaving a part of the thickness of the planarization layer under the color filter layer of the unnecessary part, and making the thickness of the planarization layer under the one filter pattern equal to The thickness of the planarization layer under the other filter patterns formed by photolithography is different. 6. The manufacturing method according to claim 4, characterized in that, In the step of forming the above-mentioned one filter pattern, the unnecessary part of one color filter layer and the planarization layer of the lower layer are removed by dry etching until reaching the semiconductor substrate. 7. The manufacturing method according to claim 4, characterized in that, The filter pattern having the largest area among the filter patterns of the plurality of colors is formed by dry etching. 8. The manufacturing method according to claim 4, characterized in that, The color filter layer patterned by the above dry etching contains at least a thermosetting resin, and the color filter layer patterned by the above photolithography contains at least a photocurable resin. 9. A solid-state imaging device comprising a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, and a color filter composed of a plurality of color filter patterns corresponding to each of the photoelectric conversion elements arranged on the semiconductor substrate , characterized in that, The filter patterns of the plurality of colors include one filter pattern containing a thermally cured resin and another filter pattern containing a photocured resin. 10. The solid-state imaging device according to claim 9, wherein The above-mentioned filter patterns of a plurality of colors include a green filter pattern, and a resin included in the green filter pattern has a higher refractive index than resin included in other filter patterns. 11. The solid-state imaging device according to claim 9, wherein A planarization layer is further provided on the color filter. 12. The solid-state imaging device according to claim 9, wherein The color filter is further provided with a microlens arranged directly corresponding to each of the photoelectric conversion elements, and a peripheral portion of the microlens is constituted by a part of the color filter. 13. A solid-state imaging device comprising a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, and a color filter composed of filter patterns of a plurality of colors corresponding to each of the photoelectric conversion elements arranged on the semiconductor substrate , characterized in that, Among the filter patterns of the plurality of colors, the filter pattern with the largest area contains thermally cured resin, and the other filter patterns contain photocured resin. 14. A solid-state imaging device comprising a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, a color filter arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements, and a part or all of the photoelectric conversion elements on the semiconductor substrate. A flattening layer is formed, the color filter has filter patterns of a plurality of colors, and the solid-state imaging device is characterized in that, The above filter patterns of a plurality of colors are formed by sequentially patterning a plurality of color filter layers; At least the initially formed filter pattern among the filter patterns of the plurality of colors is formed by dry etching an unnecessary portion of one color filter layer and a planarization layer therebelow; Forming other filter patterns using photolithography; During the above dry etching, a part of the thickness of the planarization layer below the color filter layer of the unnecessary part remains; In the flattening layer below the filter patterns of the plurality of colors, the portion below the filter pattern of one color has a different thickness from the portion below the filter patterns of the other colors. 15. The solid-state imaging device according to claim 14, wherein The above-mentioned filter patterns of a plurality of colors include a green filter pattern, and a resin included in the green filter pattern has a higher refractive index than resin included in other filter patterns. 16. The solid-state imaging device according to claim 14, wherein The color filter further includes a microlens arranged directly corresponding to each of the photoelectric conversion elements, and a peripheral portion of the microlens is constituted by a part of the color filter. 17. A solid-state imaging device comprising a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, a color filter arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements, and a part or all of the photoelectric conversion elements on the semiconductor substrate. A flattening layer is formed, the color filter has filter patterns of a plurality of colors, and the solid-state imaging device is characterized in that, The above filter patterns of a plurality of colors are formed by sequentially patterning a plurality of color filter layers; At least the initially formed filter pattern among the filter patterns of the plurality of colors is formed by dry etching an unnecessary portion of one color filter layer and a planarization layer therebelow; Forming other filter patterns using photolithography; The color filter includes both a filter pattern formed on the semiconductor substrate via a planarization layer and a filter pattern directly formed on the semiconductor substrate. 18. A solid-state imaging device comprising a photoelectric conversion element two-dimensionally arranged on a semiconductor substrate, a color filter arranged on the semiconductor substrate corresponding to each of the photoelectric conversion elements, and a part or all of the photoelectric conversion elements on the semiconductor substrate. A flattening layer is formed, the color filter has filter patterns of a plurality of colors, and the solid-state imaging device is characterized in that, One of the filter patterns of the plurality of colors includes a thermally cured resin, and the filter patterns of the other colors contain a photocured resin.

Images